Display panel and display device

Abstract

The invention discloses a display panel and a display device. The display panel comprises an array substrate, a first electrode layer, a first electron blocking layer, a second electron blocking layer, a first light-emitting layer, a charge generation layer, a second light-emitting layer and a second electrode layer, the first light-emitting layer comprises a first light-emitting unit, a second light-emitting unit and a third light-emitting unit which are arranged at intervals and have different colors. The first electron blocking layer is continuously distributed and is simultaneously aligned with the first light-emitting unit, the second light-emitting unit and the third light-emitting unit, the second electron blocking layer is located between the first electron blocking layer and the first light-emitting unit, and the first electron blocking layer and the second electron blocking layer are made of different materials. According to the display panel, the panel structure can be effectively simplified, the process cost can be effectively reduced, meanwhile, the performance of each laminated device in the display panel can be effectively improved, and the service life of each laminated device in the display panel can be effectively prolonged.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] With the development of flat panel display technology, customers' requirements for display stability have gradually increased. In recent years, organic light-emitting diodes (OLEDs) have become increasingly important. The OLED (Optical Display) display industry is developing rapidly worldwide, and OLED display technology is becoming increasingly sophisticated. With the improvement of OLED technology and processes, the application areas of OLED displays are gradually expanding to medium and large sizes. In the medium and large-size OLED display field, the stability requirements for displays are higher, especially in terms of lifespan and temperature stability. Under this environment, the demand for stacked OLED devices is increasing, and major display manufacturers are investing resources in technology and product development, launching stacked devices with various structures. However, the current mainstream stacked devices have complex structures and high manufacturing costs, making it crucial to simplify the structure of stacked devices and reduce costs. Summary of the Invention

[0003] This application provides a display panel and a display device, which can effectively simplify the panel structure and reduce process costs, while also effectively improving the performance and lifespan of each stacked device in the display panel.

[0004] To achieve the above objectives, according to a first aspect of this application, a display panel is provided, comprising an array substrate and a first electrode layer, a first electron blocking layer, a second electron blocking layer, a first light-emitting layer, a charge generating layer, a second light-emitting layer, and a second electrode layer stacked on the array substrate; the first light-emitting layer comprises a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit that are spaced apart and have different colors. The first electron blocking layer is continuously distributed and simultaneously aligned with the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit. The second electron blocking layer is located between the first electron blocking layer and the first light-emitting unit, and the first electron blocking layer and the second electron blocking layer are made of different materials.

[0005] Optionally, the absolute value of the LUMO energy level of the second electron blocking layer is greater than the absolute value of the LUMO energy level of the first electron blocking layer, and the absolute value of the HOMO energy level of the second electron blocking layer is greater than the absolute value of the HOMO energy level of the first electron blocking layer.

[0006] Optionally, the difference between the absolute value of the LUMO energy level of the second electron blocking layer and the absolute value of the LUMO energy level of the first electron blocking layer is greater than 0 and less than or equal to 0.4 eV, and the difference between the absolute value of the HOMO energy level of the second electron blocking layer and the absolute value of the HOMO energy level of the first electron blocking layer is greater than 0 and less than or equal to 0.4 eV.

[0007] Optionally, the absolute value of the LUMO energy level of the second electron blocking layer is 1.5 eV to 3.5 eV, and the absolute value of the HOMO energy level of the second electron blocking layer is 4.0 eV to 6.5 eV.

[0008] Optionally, the display panel further includes a first hole transport layer located between the first electrode layer and the first electron blocking layer, wherein the orthographic projection of the first electron blocking layer on the array substrate coincides with the orthographic projection of the first hole transport layer on the array substrate. The absolute value of the HOMO energy level of the first electron blocking layer is greater than the absolute value of the HOMO energy level of the first hole transport layer.

[0009] Optionally, the difference between the absolute value of the HOMO energy level of the first electron blocking layer and the absolute value of the HOMO energy level of the first hole transport layer is greater than 0 and less than or equal to 0.5 eV.

[0010] Optionally, the ratio of the thickness of the first electron blocking layer to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 5.

[0011] Optionally, the charge generation layer includes a first charge generation layer and a second charge generation layer, wherein the first charge generation layer is located between the first light-emitting layer and the second charge generation layer; The first charge generation layer includes an electron transport host layer and an electron mobility enhancement material doped in the electron transport host layer, wherein the molar mass fraction of the electron mobility enhancement material in the first charge generation layer ranges from 0% to 20%.

[0012] Optionally, the second light-emitting layer includes a fourth light-emitting unit, a fifth light-emitting unit, and a sixth light-emitting unit; the fourth light-emitting unit is aligned with the first light-emitting unit and emits light of the same color, the fifth light-emitting unit is aligned with the second light-emitting unit and emits light of the same color, and the sixth light-emitting unit is aligned with the third light-emitting unit and emits light of the same color. The display panel further includes a third electron blocking layer located between the charge generation layer and the second light-emitting layer. The third electron blocking layer includes a first electron blocking portion, a second electron blocking portion, and a third electron blocking portion made of different materials. In the thickness direction of the display panel, the first electron blocking portion is aligned with the fourth light-emitting unit, the second electron blocking portion is aligned with the fifth light-emitting unit, and the third electron blocking portion is aligned with the sixth light-emitting unit. The material of the first electron blocking layer is the same as the material of the second electron blocking portion, and the material of the second electron blocking layer is the same as the material of the first electron blocking portion.

[0013] Optionally, the thickness of the first electron blocking portion is the same as the thickness of the second electron blocking layer, the ratio of the thickness of the second electron blocking portion to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 7, and / or the ratio of the thickness of the third electron blocking portion to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 15.

[0014] Optionally, the charge generation layer includes a first charge generation layer and a second charge generation layer, wherein the first charge generation layer is located between the first light-emitting layer and the second charge generation layer; The second charge generation layer includes a hole transport host layer and a hole mobility enhancement material doped in the hole transport host layer, wherein the molar mass fraction of the hole mobility enhancement material in the second charge generation layer ranges from 0% to 20%.

[0015] Optionally, the absolute value of the LUMO energy level of the second electron blocking portion is smaller than the absolute value of the LUMO energy level of the second electron blocking layer, and the absolute value of the HOMO energy level of the second electron blocking portion is smaller than the absolute value of the HOMO energy level of the second electron blocking layer. The absolute value of the LUMO energy level of the third electron blocking section is less than the absolute value of the LUMO energy level of the second electron blocking layer, and the absolute value of the HOMO energy level of the third electron blocking section is less than the absolute value of the HOMO energy level of the second electron blocking layer.

[0016] Optionally, the first light-emitting unit is configured to emit blue light, the second light-emitting unit is configured to emit green light, and the third light-emitting unit is configured to emit red light.

[0017] According to a second aspect of this application, a display device is provided, the display device comprising the display panel described above.

[0018] In the display panel and display device provided in this application, on the one hand, by simultaneously aligning the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit in the first light-emitting layer with the first electron blocking layer, the first electron blocking layer serves as a common electron blocking layer for the first light-emitting layer. Compared to fabricating three independent electron blocking units with different materials for each of the first, second, and third light-emitting units in the first light-emitting layer, this application simplifies the structure of the electron blocking layer corresponding to the first light-emitting layer, which is beneficial for reducing manufacturing process costs. Furthermore, since the first electron blocking layer is a full-surface layer, it can be fabricated using a common photomask (CMM), further reducing manufacturing process costs. On the other hand, by setting a second electron blocking layer that aligns only with the first light-emitting unit between the first electron blocking layer and the first light-emitting unit, the first and second electron blocking layers form a double-layer electron blocking structure with different materials. This not only helps avoid the performance degradation of the stacked device caused by the sensitivity of the first light-emitting unit to the common electron blocking layer material, but also helps improve the carrier (hole) transport capability and reduce the interface aging rate caused by carrier transport. Therefore, the double-layer electron blocking structure is beneficial for improving the performance and lifespan of the corresponding stacked device. On the other hand, the first electron blocking layer, as a common electron blocking layer of the first light-emitting layer, can be fabricated with the adjacent hole transport layer and hole injection layer using a cavity-sharing process (i.e., sharing a cavity for evaporation), which simplifies the structure and process, greatly reduces process costs, and the resulting stacked film layers have a very high degree of overlap, which is beneficial to improving the performance and lifespan of the stacked device.

[0019] Therefore, by combining a first electron blocking layer and a second electron blocking layer with different distribution ranges and materials, this application can effectively simplify the panel structure and reduce process costs, while also effectively improving the performance and lifespan of each stacked device in the display panel.

[0020] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0022] Figure 1 This is a schematic diagram of an exemplary display panel. Figure 2 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a display device provided in an embodiment of this application. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0024] Figure 1 This is a schematic diagram of an exemplary display panel. Figure 1 As shown, the display panel 1' includes a red light stacked device R', a green light stacked device G', and a blue light stacked device B'. From bottom to top, the display panel 1' includes an array substrate 2, an anode layer 3, a hole injection layer 4, a first hole transport layer 5, a first light-emitting layer 6, a first electron injection-transporting composite layer (EICL) 7, a first electron transport layer 8, a charge generation layer 9, a second electron transport layer 13, a second light-emitting layer 11, a second electron injection-transporting composite layer 12, a second electron transport layer 13, a second electron injection layer 14, a cathode layer 15, and a light extraction layer (CPL) 16.

[0025] Specifically, the first light-emitting layer 6 includes a first blue light-emitting unit 6a', a first green light-emitting unit 6b', and a first red light-emitting unit 6c' arranged at intervals. The display panel 1' also includes a first red electron blocking unit 17, a first green electron blocking unit 18, and a first blue electron blocking unit 19 located between the first hole transport layer 5 and the first light-emitting layer 6 and respectively aligned with the first red light-emitting unit 6c', the first green light-emitting unit 6b', and the first blue light-emitting unit 6a'. The second light-emitting layer 11 includes a second red light-emitting unit 11c', a second green light-emitting unit 11b', and a second blue light-emitting unit 11a' respectively aligned with the first red light-emitting unit 6c', the first green light-emitting unit 6b', and the first blue light-emitting unit 6a'. The display panel 1' also includes a second red light electron blocking unit 20, a second green light electron blocking unit 21, and a second blue light electron blocking unit 22, which are located between the second hole transport layer 10 and the second light emission layer 11 and are respectively aligned with the second red light emission unit 11c', the second green light emission unit 11b', and the second blue light emission unit 11a'.

[0026] Typically, the first light-emitting layer 6 and the second light-emitting layer 11 have the same structure, the first red electron blocking unit 17 and the second red electron blocking unit 20 have the same structure, the first green electron blocking unit 18 and the second green electron blocking unit 21 have the same structure, and the first blue electron blocking unit 19 and the second blue electron blocking unit 22 have the same structure. Furthermore, the thickness of the first red electron blocking unit 17 is greater than the thickness of the first green electron blocking unit 18, the thickness of the first green electron blocking unit 18 is greater than the thickness of the first blue electron blocking unit 19, and the materials of the first red electron blocking unit 17, the first green electron blocking unit 18, and the first blue electron blocking unit 19 are different.

[0027] Therefore, in production Figure 1 When fabricating the electron blocking layer in the display panel 1' shown, six fine metal masks (FMMs) are required to fabricate the first red electron blocking unit 17, the first green electron blocking unit 18, the first blue electron blocking unit 19, the second red electron blocking unit 20, the second green electron blocking unit 21, and the second blue electron blocking unit 22, respectively. This results in… Figure 1 The stacked devices in the display panel 1' shown have a complex structure and high manufacturing cost. Therefore, it is very important to simplify the structure of the stacked devices and reduce the production cost.

[0028] In order to simplify the structure of the stacked device and reduce production costs, this application has adjusted and optimized the results of the stacked device in the display panel, and provided a display panel that includes a stacked device with high performance, simpler structure, lower process cost and good device life.

[0029] like Figure 2 As shown, this application embodiment provides a display panel 1, which includes an array substrate 2 and a first electrode layer 23, a first electron blocking layer 24, a second electron blocking layer 25, a first light-emitting layer 6, a charge generating layer 9, a second light-emitting layer 11, and a second electrode layer 26 stacked on the array substrate 2; the first light-emitting layer 6 includes a first light-emitting unit 6a, a second light-emitting unit 6b, and a third light-emitting unit 6c that are spaced apart and have different colors.

[0030] The first electron blocking layer 24 is continuously distributed and simultaneously aligned with the first light-emitting unit 6a, the second light-emitting unit 6b and the third light-emitting unit 6c. The second electron blocking layer 25 is located between the first electron blocking layer 24 and the first light-emitting unit 6a, and the materials of the first electron blocking layer 24 and the second electron blocking layer 25 are different.

[0031] In other words, the orthogonal projection of the first electron blocking layer 24 on the array substrate 2 is continuously distributed and simultaneously covers the orthogonal projections of the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c on the array substrate 2, and the orthogonal projection of the second electron blocking layer 25 on the array substrate 2 only covers the orthogonal projection of the first light-emitting unit 6a.

[0032] It should be noted that the first electron blocking layer 24 and the second electron blocking layer 25 have the functions of hole transport and electron blocking, as well as the function of adjusting the length of the microcavity. Therefore, the first electron blocking layer 24 and the second electron blocking layer 25 can both be called functional layers (FL).

[0033] Understandably, the first electron blocking layer 24 is formed over the entire surface and is aligned with the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c in the first light-emitting layer 6 along the thickness direction of the display panel 1. Therefore, the first electron blocking layer 24 is equivalent to the common function layer (CFL) of the first light-emitting layer 6. The second electron blocking layer 25 is located between the first electron blocking layer 24 and the first light-emitting unit 6a, and is aligned only with the first light-emitting unit 6a. Therefore, the second electron blocking layer 25 is equivalent to the blue electron blocking unit (FLB).

[0034] On the one hand, in this embodiment, by simultaneously aligning the first electron blocking layer 24 with the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c in the first light-emitting layer 6, the first electron blocking layer 24 serves as a common electron blocking layer for the first light-emitting layer 6. Compared to fabricating three independent electron blocking units with different materials for each of the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c in the first light-emitting layer 6, this embodiment simplifies the structure of the electron blocking layer corresponding to the first light-emitting layer 6, which is beneficial for reducing manufacturing process costs. Furthermore, since the first electron blocking layer 24 is a full-surface arrangement, it can be directly fabricated using a common mask (CMM) without the need for an open-face mask (FMM), which further helps to reduce manufacturing process costs.

[0035] On the other hand, this embodiment of the application provides a second electron blocking layer 25, which is only aligned with the first light-emitting unit 6a, between the first electron blocking layer 24 and the first electron blocking unit 6a. This creates a double-layer electron blocking structure with different materials for the first electron blocking layer 24 and the second electron blocking layer 25. This not only helps to avoid the performance degradation of the stacked device caused by the sensitivity of the first light-emitting unit 6a to the common electron blocking layer material, but also helps to improve the carrier (hole) transport capability and reduce the interface aging rate caused by carrier transport. Therefore, the double-layer electron blocking structure is beneficial to improving the performance and lifespan of the corresponding stacked device.

[0036] On the other hand, the first electron blocking layer 24, as a common electron blocking layer of the first light-emitting layer 6, can be fabricated with the adjacent hole transport layer and hole injection layer 4 using a cavity-sharing process (i.e., sharing a cavity for evaporation), which simplifies the structure and process, greatly reduces process costs, and the resulting stacked film layers have a high degree of overlap, which is beneficial to improving the performance and lifespan of the stacked device.

[0037] Therefore, by combining the first electron blocking layer 24 and the second electron blocking layer 25 with different distribution ranges and materials, the embodiments of this application can effectively simplify the panel structure and reduce the process cost, while effectively improving the performance and service life of each stacked device in the display panel 1.

[0038] It is understood that the film layer structure of the display panel 1 provided in this application embodiment is similar to... Figure 1 The display panel 1' shown has a similar film structure, but the main difference lies in the structure of the electron blocking layer corresponding to the first light-emitting layer 6.

[0039] In some embodiments, the first light-emitting unit 6a is configured to emit any one of red light, green light, and blue light, the second light-emitting unit 6b is configured to emit any one of red light, green light, and blue light that is different from the first light-emitting unit 6a, and the third light-emitting unit 6c is configured to emit any one of red light, green light, and blue light that is different from the first light-emitting unit 6a and the second light-emitting unit 6b.

[0040] In a preferred embodiment, the first light-emitting unit 6a is configured to emit blue light, the second light-emitting unit 6b is configured to emit green light, and the third light-emitting unit 6c is configured to emit red light. That is, the first electron blocking layer 24 and the second electron blocking layer 25 constitute a double-layer blue light electron blocking structure made of different materials.

[0041] It should be noted that the following description will take the example of the first light-emitting unit 6a being configured to emit blue light, the second light-emitting unit 6b being configured to emit green light, and the third light-emitting unit 6c being configured to emit red light, but the scope of protection of this application is not limited thereto.

[0042] Specifically, the array substrate 2 includes a substrate layer and a driving circuit layer disposed on the substrate layer. The driving circuit layer includes multiple driving circuit units, and each driving circuit unit includes at least one thin-film transistor (TFT).

[0043] Specifically, the first electrode layer 23 is the anode layer, and the corresponding second electrode layer 26 is the cathode layer.

[0044] In some embodiments, the first electrode layer 23 includes electrode units respectively aligned with the first light-emitting unit 6a, the second light-emitting unit 6b and the third light-emitting unit 6c, and each driving circuit unit is electrically connected to at least one electrode unit.

[0045] Understandably, in the thickness direction of the display panel 1, the area corresponding to each electrode unit is a sub-pixel area, and each sub-pixel area has a stacked device. For example, the device formed by the sub-pixel area corresponding to the first light-emitting unit 6a is a blue light stacked device B, the device formed by the sub-pixel area corresponding to the second light-emitting unit 6b is a green light stacked device G, and the device formed by the sub-pixel area corresponding to the third light-emitting unit 6c is a red light stacked device R.

[0046] Specifically, the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c emit blue light, green light, and red light respectively under the drive of the driving circuit layer, thereby achieving full-color display.

[0047] In some embodiments, the material of the first light-emitting unit 6a is a fluorescent material. Therefore, the first light-emitting unit 6a is relatively sensitive to the materials of the first electron blocking layer 24 and the second electron blocking layer 25. When optimizing the structure of the blue light stacked device B, it is necessary to prioritize the performance of the blue light stacked device B. Therefore, it is necessary to retain the second electron blocking layer 25 that matches the energy level of the first light-emitting unit 6a.

[0048] In some embodiments, the absolute value of the lowest unoccupied molecular orbital (LUMO) energy level of the second electron blocking layer 25 is greater than the absolute value of the LUMO energy level of the first electron blocking layer 24, and the absolute value of the highest occupied molecular orbital (HOMO) energy level of the second electron blocking layer 25 is greater than the absolute value of the HOMO energy level of the first electron blocking layer 24.

[0049] As is understandable, both the HOMO and LUMO energy levels are negative. Therefore, the larger the absolute value of the energy level, the further away it is from the vacuum energy level (0 eV). Conversely, the smaller the absolute value of the energy level, the closer it is to the vacuum energy level.

[0050] In this embodiment, the first electron blocking layer 24 and the second electron blocking layer 25 form an energy level ladder between the hole transport layer (i.e., the first hole transport layer 5 below) and the first light-emitting unit 6a, which reduces the difficulty of hole injection into the first light-emitting unit 6a, is more conducive to the transport of charge carriers (holes), and reduces the interface aging speed caused by charge carrier transport, thereby helping to improve the service life of the blue light stacked device B.

[0051] Understandably, the reduced difficulty of hole injection into the first light-emitting unit 6a will result in a lower driving voltage in the product.

[0052] In some embodiments, the difference between the absolute value of the LUMO energy level of the second electron blocking layer 25 and the absolute value of the LUMO energy level of the first electron blocking layer 24 is greater than 0 and less than or equal to 0.4 eV, and the difference between the absolute value of the HOMO energy level of the second electron blocking layer 25 and the absolute value of the HOMO energy level of the first electron blocking layer 24 is greater than 0 and less than or equal to 0.4 eV.

[0053] In this embodiment, the absolute value of the HOMO energy level of the second electron blocking layer 25 is slightly higher than the absolute value of the HOMO energy level of the first electron blocking layer 24. While ensuring efficient hole transport, it avoids excessive hole penetration, which is conducive to achieving charge balance in the first light-emitting layer 6, thereby improving the device's luminous efficiency and lifespan.

[0054] Meanwhile, the absolute value of the LUMO energy level of the second electron blocking layer 25 is slightly higher than that of the first electron blocking layer 24, resulting in a larger difference between the LUMO energy level of the second electron blocking layer 25 and the first light-emitting unit 6a. This allows for the direct interception of most electrons attempting to escape. The first electron blocking layer 24, located near the first hole transport layer 5, forms a secondary barrier to electrons, providing double protection against electron diffusion into the first hole transport layer 5. Furthermore, the slightly higher absolute value of the LUMO energy level of the second electron blocking layer 25 compared to the first electron blocking layer 24 avoids affecting the matching of HOMO energy levels, ensuring efficient hole transport, preventing hole accumulation caused by a single high barrier, and avoiding interface compatibility issues caused by abrupt changes in the LUMO energy levels of the two electron blocking layers.

[0055] Therefore, the difference setting between the HOMO and LUMO energy levels of the first electron blocking layer 24 and the second electron blocking layer 25 can enhance the electron blocking effect and optimize hole transport and interface compatibility while achieving efficient hole transport.

[0056] In one specific embodiment, the absolute value of the LUMO energy level of the second electron blocking layer 25 ranges from 1.5 eV to 3.5 eV, and the absolute value of the HOMO energy level of the second electron blocking layer 25 ranges from 4.0 eV to 6.5 eV.

[0057] In some embodiments, the display panel 1 further includes a first hole transport layer 5 located between the first electrode layer 23 and the first electron blocking layer 24. In the thickness direction of the display panel 1, the first electron blocking layer 24 and the first hole transport layer 5 are disposed concurrently; that is, the orthographic projection of the first electron blocking layer 24 onto the array substrate 2 coincides with the orthographic projection of the first hole transport layer 5 onto the array substrate 2. Furthermore, the absolute value of the HOMO energy level of the first electron blocking layer 24 is greater than the absolute value of the HOMO energy level of the first hole transport layer 5.

[0058] It should be noted that in OLED devices, the HOMO energy level of the electron blocking layer must be lower than the HOMO energy level of the hole transport layer (HTL) but higher than the HOMO energy level of the emissive layer (EML), and the LUMO energy level of the electron blocking layer must be significantly higher than the LUMO energy level of the emissive layer to achieve efficient electron blocking and hole transport simultaneously. In other words, efficient electron blocking and hole transport can be achieved when the absolute value of the HOMO energy level of the electron blocking layer is greater than the absolute value of the HOMO energy level of the hole transport layer but less than the absolute value of the HOMO energy level of the emissive layer, and simultaneously the absolute value of the LUMO energy level of the electron blocking layer is significantly less than the absolute value of the LUMO energy level of the emissive layer.

[0059] In this embodiment, the absolute values ​​of the HOMO energy levels of each film layer increase layer by layer in the direction from the first hole transport layer 5 to the first light-emitting unit 6a. This can effectively improve the hole transport efficiency in the direction from the first hole transport layer 5 to the first light-emitting unit 6a, thereby helping to reduce the interface aging rate caused by carrier transport and thus helping to improve the service life of the blue light stacked device B.

[0060] In some embodiments, the difference between the absolute value of the HOMO energy level of the first electron blocking layer 24 and the absolute value of the HOMO energy level of the first hole transport layer 5 is greater than 0 and less than or equal to 0.5 eV. This design makes the absolute value of the HOMO energy level of the first electron blocking layer 24 slightly higher than the absolute value of the HOMO energy level of the first hole transport layer 5. While ensuring efficient hole transport, it avoids excessive hole penetration, which is beneficial for achieving charge balance in the first light-emitting layer 6, thereby improving the device's luminous efficiency and lifespan.

[0061] In some embodiments, the materials of the first electron blocking layer 24 and the second electron blocking layer 25 are both selected from aromatic amine compounds and have a wide bandgap.

[0062] In some embodiments, the ratio of the thickness of the first electron blocking layer 24 to the thickness of the second electron blocking layer 25 is greater than 0 and less than or equal to 5. That is, the thickness of the first electron blocking layer 24 is 0 to 5 (excluding 0) times the thickness of the second electron blocking layer 25.

[0063] In this embodiment, by controlling the thickness of the first electron blocking layer 24, the first electron blocking layer 24 can achieve the hole transport effect from the first hole transport layer 5 to the second light-emitting unit 6b and the third light-emitting unit 6c, while ensuring the electron blocking effect from the second light-emitting unit 6b and the third light-emitting unit 6c to the first hole transport layer 5.

[0064] In a preferred embodiment, the ratio of the thickness of the first electron blocking layer 24 to the thickness of the second electron blocking layer 25 is greater than or equal to 0.5 and less than or equal to 2.

[0065] In one specific embodiment, the thickness of the first electron blocking layer 24 is equal to the thickness of the second electron blocking layer 25.

[0066] In some embodiments, the thickness of the second electron blocking layer 25 ranges from 0 Å to 250 Å.

[0067] In some embodiments, the second light-emitting layer 11 includes a fourth light-emitting unit 11a, a fifth light-emitting unit 11b, and a sixth light-emitting unit 11c. In the thickness direction of the display panel 1, the fourth light-emitting unit 11a is aligned with the first light-emitting unit 6a and emits light of the same color, the fifth light-emitting unit 11b is aligned with the second light-emitting unit 6b and emits light of the same color, and the sixth light-emitting unit 11c is aligned with the third light-emitting unit 6c and emits light of the same color.

[0068] The display panel 1 further includes a third electron blocking layer 27 located between the charge generating layer 9 and the second light-emitting layer 11. The third electron blocking layer 27 includes a first electron blocking portion 27a, a second electron blocking portion 27b, and a third electron blocking portion 27c made of different materials. In the thickness direction of the display panel 1, the first electron blocking portion 27a is aligned with the fourth light-emitting unit 11a, the second electron blocking portion 27b is aligned with the fifth light-emitting unit 11b, and the third electron blocking portion 27c is aligned with the sixth light-emitting unit 11c. The first electron blocking layer 24 is made of the same material as the second electron blocking portion 27b, and the second electron blocking layer 25 is made of the same material as the first electron blocking portion 27a.

[0069] Understandably, the first electron blocking layer 24 and the second electron blocking section 27b are both green electron blocking structures, the second electron blocking layer 25 and the first electron blocking section 27a are both blue electron blocking structures, and the third electron blocking section 27c is a red electron blocking structure. That is to say, with... Figure 1 Compared to the display panel 1' shown, the embodiment of this application omits a layer of red light electron blocking structure.

[0070] In some embodiments, the thickness of the first electron blocking portion 27a is the same as the thickness of the second electron blocking layer 25. It is understood that the first electron blocking portion 27a and the second electron blocking layer 25 are manufactured using the same process.

[0071] In some embodiments, the thickness of the first electron blocking layer 24 is less than the thickness of the second electron blocking portion 27b, and the ratio of the thickness of the second electron blocking portion 27b to the thickness of the second electron blocking layer 25 is greater than 0 and less than or equal to 7. That is, the thickness of the second electron blocking portion 27b is 0 to 7 (excluding 0) times the thickness of the second electron blocking layer 25.

[0072] This embodiment controls the thickness ratio of the second electron blocking portion 27b to the second electron blocking layer 25. Compared with the thickness of the first electron blocking layer 24, the thickness design window of the second electron blocking portion 27b is increased. This allows for a thicker design of the second electron blocking portion 27b to compensate for the change in the microcavity length of the green light stacked device G caused by the first electron blocking layer 24 replacing the green light emission unit 6b. This ensures that the number of microcavity nodes in the green light stacked device G remains unchanged or is kept in an optimal state, so that the light emission of the green light stacked device G is always maintained in a microcavity enhanced state.

[0073] For example, the green light stacked device G is a top-emitting device. In the entire green light stacked device G, the efficiency of the fifth light-emitting unit 11b is higher than that of the second light-emitting unit 6b. In order to ensure that the microcavity enhancement effect of the green light stacked device G remains unchanged, the thickness of the second electron blocking part 27b is adjusted so that the second light-emitting unit 6b and the fifth light-emitting unit 11b are located at 3 / 4 wavelength and 1 / 4 wavelength of the microcavity structure formed by the green light stacked device G, respectively. These two positions will cause the light emitted by them to interfere and enhance, which is beneficial to improving the luminous efficiency of the green light stacked device G.

[0074] In some embodiments, the thickness of the first electron blocking layer 24 is less than the thickness of the third electron blocking portion 27c, and the ratio of the thickness of the third electron blocking portion 27c to the thickness of the second electron blocking layer 25 is greater than 0 and less than or equal to 15. That is, the thickness of the third electron blocking portion 27c is 0 to 15 (excluding 0) times the thickness of the second electron blocking layer 25.

[0075] This embodiment controls the thickness ratio of the third electron blocking portion 27c to the second electron blocking layer 25. Compared with the thickness of the first electron blocking layer 24, the thickness design window of the third electron blocking portion 27c is increased. This allows for a thicker design of the third electron blocking portion 27c to compensate for the change in the microcavity length of the red light stacked device R caused by the first electron blocking layer 24 replacing the red light electron blocking structure of the third light-emitting unit 6c. This ensures that the number of microcavity nodes in the red light stacked device R remains unchanged or is kept in an optimal state, so that the light output of the red light stacked device R is always maintained in a microcavity enhanced state.

[0076] For example, the red light stacked device R is a top-emitting device. In the entire red light stacked device R, the efficiency of the sixth light-emitting unit 11c is higher than that of the third light-emitting unit 6c. In order to ensure that the microcavity enhancement effect of the red light stacked device R remains unchanged, the thickness of the third electron blocking part 27c is adjusted so that the third light-emitting unit 6c and the sixth light-emitting unit 11c are located at 3 / 4 wavelength and 1 / 4 wavelength of the microcavity structure formed by the red light stacked device R, respectively. These two positions will cause the light emitted by them to interfere and enhance, which is beneficial to improving the luminous efficiency of the red light stacked device R.

[0077] Obviously, by thickening the second electron blocking portion 27b and the third electron blocking portion 27c, the microcavity enhancement effect of the fifth light-emitting unit 11b and the sixth light-emitting unit 11c in the second light-emitting layer 11 can be maintained unchanged. At the same time, since the thickness of the second electron blocking portion 27b and the third electron blocking portion 27c is increased, the path of electrons through the blocking layer is lengthened, thereby reducing the probability of electrons entering the hole transport layer (i.e., the second hole transport layer 10 below), which is beneficial to extending the lifetime of the hole transport film layer, and thus delaying the device lifetime.

[0078] Of course, by thickening the second electron blocking portion 27b and the third electron blocking portion 27c in this embodiment, the hole transport distance from the charge generation layer 9 to the second light-emitting layer 11 is also extended, thereby reducing the hole injection rate into the second light-emitting layer 11 and improving the imbalance between the hole and electron injection rates in the second light-emitting layer 11. This is beneficial to improving the luminous efficiency and lifespan of the red and green light devices corresponding to the second light-emitting layer 11, thereby improving the luminous efficiency and lifespan of the entire red light stacked device R and the green light stacked device G.

[0079] Specifically, the charge generation layer 9 includes a first charge generation layer (NCGL) 9a and a second charge generation layer (PCGL) 9b, with the first charge generation layer 9a located between the first light-emitting layer 6 and the second charge generation layer 9b.

[0080] Understandably, the first charge generation layer 9a is an N-type semiconductor and the second charge generation layer 9b is a P-type semiconductor. Both have charge generation capabilities and can provide holes and electrons for the multilayer light-emitting device, respectively.

[0081] In some embodiments, the first charge generation layer 9a includes an electron transport host layer and an electron mobility enhancement material doped in the electron transport host layer, wherein the molar mass fraction of the electron mobility enhancement material in the first charge generation layer 9a ranges from 0% to 20%.

[0082] and Figure 1 Compared to the display panel 1' shown, this embodiment uses a thinner, full-surface first electron blocking layer 24 instead of the original display panel 1'. Figure 1 The first red electron blocking unit 17 and the first green electron blocking unit 18 are located in the first charge generation layer 6. Since hole mobility is inherently higher than electron mobility, and the first electron blocking layer 24 is aligned with the second light-emitting unit 6b and the third light-emitting unit 6c, it effectively shortens the path for holes to enter the first light-emitting layer 6, exacerbating carrier imbalance. This embodiment of the application, by adjusting the doping ratio of the electron mobility enhancement material in the first charge generation layer 9a, can effectively increase the electron mobility rate, thereby enhancing the carrier balance in the first light-emitting layer 6 and avoiding the carrier imbalance problem caused by the setting of the first electron blocking layer 24.

[0083] In some embodiments, the electron mobility enhancement material in the first charge generation layer 9a includes metals such as Yb, Li, Cs, and Mg, but is not limited thereto.

[0084] In some embodiments, the electron mobility of the electron transport host layer in the first charge generation layer 9a is greater than or equal to 10. -3 cm 2 / Vs.

[0085] In some embodiments, the second charge generation layer 9b includes a hole transport host layer and a hole mobility enhancement material doped in the hole transport host layer, wherein the molar mass fraction of the hole mobility enhancement material in the second charge generation layer 9b ranges from 0% to 20%.

[0086] When the thickness of the second electron blocking portion 27b and the third electron blocking portion 27c is increased, it is equivalent to lengthening the path for holes to enter the fifth light-emitting unit 11b and the sixth light-emitting unit 11c, which is beneficial to stabilizing the carrier balance in the second light-emitting layer 11. In order to further enhance the carrier balance effect in the second light-emitting layer 11, this embodiment controls the doping ratio of the hole mobility enhancement material in the second charge generation layer 9b, which can reduce the hole migration rate and thus enhance the carrier balance in the second light-emitting layer 11.

[0087] In some embodiments, the material of the second charge generation layer 9b is typically composed of metal oxides (e.g., ITO, WO3, MoO3, V2O5) or of hole transport materials doped with Lewis acids (e.g., FeCl3:NPB, F4-TCNQ:NPB).

[0088] In some embodiments, the hole mobility of the second charge generation layer 9b is greater than or equal to 10. -2 cm 2 / Vs.

[0089] In some embodiments, the absolute value of the LUMO energy level of the second electron blocking portion 27b is less than the absolute value of the LUMO energy level of the second electron blocking layer 25, and the absolute value of the HOMO energy level of the second electron blocking portion 27b is less than the absolute value of the HOMO energy level of the second electron blocking layer 25. Similarly, the absolute value of the LUMO energy level of the third electron blocking portion 27c is less than the absolute value of the LUMO energy level of the second electron blocking layer 25, and the absolute value of the HOMO energy level of the third electron blocking portion 27c is less than the absolute value of the HOMO energy level of the second electron blocking layer 25.

[0090] In one specific embodiment, the absolute value of the LUMO energy level of the second electron blocking portion 27b is 0 to 0.35 eV (excluding 0) smaller than the absolute value of the LUMO energy level of the second electron blocking layer 25. That is, the difference between the absolute value of the LUMO energy level of the second electron blocking layer 25 and the absolute value of the LUMO energy level of the second electron blocking portion 27b is in the range of 0 to 0.35 eV.

[0091] In one specific embodiment, the absolute value of the HOMO energy level of the second electron blocking portion 27b is 0 to 0.35 eV (excluding 0) smaller than the absolute value of the HOMO energy level of the second electron blocking layer 25. That is, the difference between the absolute value of the HOMO energy level of the second electron blocking layer 25 and the absolute value of the HOMO energy level of the second electron blocking portion 27b is in the range of 0 to 0.35 eV.

[0092] In one specific embodiment, the absolute value of the LUMO energy level of the third electron blocking layer 27c is 0 to 0.35 eV (excluding 0) smaller than the absolute value of the LUMO energy level of the second electron blocking layer 25. That is, the difference between the absolute value of the LUMO energy level of the second electron blocking layer 25 and the absolute value of the LUMO energy level of the third electron blocking layer 27c is in the range of 0 to 0.35 eV.

[0093] In one specific embodiment, the absolute value of the HOMO energy level of the third electron blocking layer 27c is 0 to 0.35 eV (excluding 0) smaller than the absolute value of the HOMO energy level of the second electron blocking layer 25. That is, the difference between the absolute value of the HOMO energy level of the second electron blocking layer 25 and the absolute value of the HOMO energy level of the third electron blocking layer 27c is in the range of 0 to 0.35 eV.

[0094] In some embodiments, the second electron blocking portion 27b and the third electron blocking portion 27c are both made of aromatic amine compounds and have a wide bandgap. It is understood that the second electron blocking portion 27b and the third electron blocking portion 27c have hole transport and electron blocking functions, and also have the function of adjusting the microcavity length.

[0095] It should be noted that the materials of the first electron blocking layer 24 and the second electron blocking portion 27b can be selected from conventional green electron blocking materials that meet the aforementioned energy level requirements, the materials of the second electron blocking layer 25 and the first electron blocking portion 27a can be selected from conventional blue electron blocking materials that meet the aforementioned energy level requirements, and the material of the third electron blocking portion 27c can be selected from conventional red electron blocking materials that meet the aforementioned energy level requirements.

[0096] In some embodiments, the display panel 1 further includes a second hole transport layer 10 located between the charge generation layer 9 and the third electron blocking layer 27. The absolute values ​​of the HOMO energy levels of the second electron blocking portion 27b and the third electron blocking portion 27c are greater than the absolute values ​​of the HOMO energy levels of the second hole transport layer 10. This design is beneficial for improving the hole transport efficiency from the second hole transport layer 10 to the second light-emitting layer 11 while ensuring the electron blocking effect.

[0097] In some embodiments, the absolute values ​​of the HOMO energy levels of the second electron blocking portion 27b and the third electron blocking portion 27c are 0 to 0.5 eV (excluding 0) greater than the absolute value of the HOMO energy level of the second hole transport layer 10. That is, the difference between the absolute value of the HOMO energy level of the second hole transport layer 10 and the absolute value of the HOMO energy levels of the second electron blocking portion 27b and the third electron blocking portion 27c is in the range of 0 to 0.5 eV.

[0098] In some embodiments, the display panel 1 further includes a hole injection layer 4 located between the first electrode layer 23 and the first hole transport layer 5, and the hole injection layer 4, the first hole transport layer 5 and the first electron blocking layer 24 are arranged to overlap in the thickness direction of the display panel 1.

[0099] Specifically, the hole injection layer 4, the first hole transport layer 5, and the first electron blocking layer 24 can be fabricated using a cavity-sharing process. In other words, the hole injection layer 4, the first hole transport layer 5, and the first electron blocking layer 24 can be deposited in the same cavity, which will greatly reduce production costs. Furthermore, the overlap between the hole injection layer 4, the first hole transport layer 5, and the first electron blocking layer 24 obtained by cavity-sharing is very high, which is beneficial to improving the utilization efficiency of these three layers and thus improving device efficiency.

[0100] Understandably, non-cavity processes often result in alignment deviations, leading to misalignment of the two film layers. For example, the distance between the edges of two film layers produced using a non-cavity process may be greater than or equal to 0, while the distance between the edges of two film layers produced using a cavity process is 0.

[0101] Furthermore, the hole injection layer 4, the first hole transport layer 5, and the first electron blocking layer 24 can be fabricated using the same CMM, which simplifies the membrane structure and process route and effectively reduces production costs.

[0102] In some embodiments, the display panel 1 further includes a first electron injection / transport composite layer 7 and a first electron transport layer 8 located between the first light-emitting layer 6 and the charge generation layer 9, a second electron injection / transport composite layer 12, a second electron transport layer 13, and an electron injection layer located between the second light-emitting layer 11 and the second electrode layer 26. The first electron injection / transport composite layer 7 is located between the first light-emitting layer 6 and the first electron transport layer 8, the second electron injection / transport composite layer 12 is located between the second light-emitting layer 11 and the second electron transport layer 13, and the electron injection layer is located between the second electron transport layer 13 and the second electrode layer 26.

[0103] In some embodiments, the display panel 1 further includes a light extraction layer (CPL) 16 located on the side of the second electrode layer 26 opposite to the first electrode layer 23, for improving the light extraction efficiency of the device.

[0104] In this embodiment, on the one hand, by simultaneously aligning the first electron blocking layer 24 with the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c in the first light-emitting layer 6, the first electron blocking layer 24 serves as a common electron blocking layer for the first light-emitting layer 6. Compared to fabricating three independent electron blocking units with different materials corresponding to the first light-emitting unit 6a, the second light-emitting unit 6b, and the third light-emitting unit 6c in the first light-emitting layer 6, this embodiment simplifies the structure of the electron blocking layer and helps reduce production process costs. Furthermore, since the first electron blocking layer 24 is a single-sided layer, it can be fabricated using a common photomask (CMM), which further helps reduce production process costs. On the other hand, when the first light-emitting unit 6a is configured to emit blue light, a second electron-blocking layer 25, which is only aligned with the first light-emitting unit 6a, is provided between the first electron-blocking layer 24 and the first electron-blocking unit 6a. This creates a double-layer blue electron-blocking structure with different materials for the first electron-blocking layer 24 and the second electron-blocking layer 25. This not only helps to avoid the performance degradation of the blue stacked device caused by the sensitivity of the first light-emitting unit 6a to the common electron-blocking layer material, but also helps to improve the carrier (hole) transport capability and reduce the interface aging rate caused by carrier transport. Therefore, the double-layer blue electron-blocking structure is beneficial to improving the performance and lifespan of the blue stacked device. Furthermore, the first electron-blocking layer 24, as the common electron-blocking layer of the first light-emitting layer 6, can be fabricated with the adjacent hole transport layer and hole injection layer using a cavity-sharing process (i.e., sharing a single chamber for evaporation). This simplifies the structure and process, significantly reducing process costs. Moreover, the resulting stacked films have a high degree of overlap, which is beneficial to improving the performance and lifespan of the stacked device.

[0105] Therefore, by combining the first electron blocking layer 24 and the second electron blocking layer 25 with different distribution ranges and materials, the embodiments of this application can effectively simplify the panel structure and reduce the process cost, while effectively improving the performance and service life of each stacked device in the display panel 1.

[0106] like Figure 3 As shown, this application embodiment also provides a display device 28, which includes the display panel 1 described in the foregoing embodiment.

[0107] In some embodiments, the display device 28 includes a housing 29 and a protective layer 30, with the display panel 1 disposed between the housing 29 and the protective layer 30, but is not limited thereto.

[0108] In this embodiment, the structure of the display panel 1 is simplified, the production cost is reduced, and the device performance and lifespan are improved, which reduces the production cost of the display device 28 and improves the display effect and lifespan.

[0109] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0110] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0111] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0112] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel, characterized in that, The array includes an array substrate and a first electrode layer, a first electron blocking layer, a second electron blocking layer, a first light-emitting layer, a charge generating layer, a second light-emitting layer, and a second electrode layer stacked on the array substrate; the first light-emitting layer includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit that are spaced apart and have different colors. The first electron blocking layer is continuously distributed and simultaneously aligned with the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit. The second electron blocking layer is located between the first electron blocking layer and the first light-emitting unit, and the first electron blocking layer and the second electron blocking layer are made of different materials.

2. The display panel according to claim 1, characterized in that, The absolute value of the LUMO energy level of the second electron blocking layer is greater than the absolute value of the LUMO energy level of the first electron blocking layer, and the absolute value of the HOMO energy level of the second electron blocking layer is greater than the absolute value of the HOMO energy level of the first electron blocking layer.

3. The display panel according to claim 2, characterized in that, The difference between the absolute value of the LUMO energy level of the second electron blocking layer and the absolute value of the LUMO energy level of the first electron blocking layer is greater than 0 and less than or equal to 0.4 eV, and the difference between the absolute value of the HOMO energy level of the second electron blocking layer and the absolute value of the HOMO energy level of the first electron blocking layer is greater than 0 and less than or equal to 0.4 eV.

4. The display panel according to claim 1, characterized in that, The absolute values ​​of the LUMO energy level of the second electron blocking layer range from 1.5 eV to 3.5 eV, and the absolute values ​​of the HOMO energy level of the second electron blocking layer range from 4.0 eV to 6.5 eV.

5. The display panel according to claim 2, characterized in that, The display panel further includes a first hole transport layer located between the first electrode layer and the first electron blocking layer, wherein the orthographic projection of the first electron blocking layer on the array substrate coincides with the orthographic projection of the first hole transport layer on the array substrate. The absolute value of the HOMO energy level of the first electron blocking layer is greater than the absolute value of the HOMO energy level of the first hole transport layer.

6. The display panel according to claim 5, characterized in that, The difference between the absolute value of the HOMO energy level of the first electron blocking layer and the absolute value of the HOMO energy level of the first hole transport layer is greater than 0 and less than or equal to 0.5 eV.

7. The display panel according to claim 1, characterized in that, The ratio of the thickness of the first electron blocking layer to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 5.

8. The display panel according to any one of claims 1 to 7, characterized in that, The charge generation layer includes a first charge generation layer and a second charge generation layer, wherein the first charge generation layer is located between the first light-emitting layer and the second charge generation layer; The first charge generation layer includes an electron transport host layer and an electron mobility enhancement material doped in the electron transport host layer, wherein the molar mass fraction of the electron mobility enhancement material in the first charge generation layer ranges from 0% to 20%.

9. The display panel according to any one of claims 1 to 7, characterized in that, The second light-emitting layer includes a fourth light-emitting unit, a fifth light-emitting unit, and a sixth light-emitting unit. The fourth light-emitting unit is aligned with the first light-emitting unit and emits light of the same color. The fifth light-emitting unit is aligned with the second light-emitting unit and emits light of the same color. The sixth light-emitting unit is aligned with the third light-emitting unit and emits light of the same color. The display panel further includes a third electron blocking layer located between the charge generation layer and the second light-emitting layer. The third electron blocking layer includes a first electron blocking portion, a second electron blocking portion, and a third electron blocking portion made of different materials. In the thickness direction of the display panel, the first electron blocking portion is aligned with the fourth light-emitting unit, the second electron blocking portion is aligned with the fifth light-emitting unit, and the third electron blocking portion is aligned with the sixth light-emitting unit. The material of the first electron blocking layer is the same as the material of the second electron blocking portion, and the material of the second electron blocking layer is the same as the material of the first electron blocking portion.

10. The display panel according to claim 9, characterized in that, The thickness of the first electron blocking portion is the same as the thickness of the second electron blocking layer, the ratio of the thickness of the second electron blocking portion to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 7, and / or the ratio of the thickness of the third electron blocking portion to the thickness of the second electron blocking layer is greater than 0 and less than or equal to 15.

11. The display panel according to claim 10, characterized in that, The charge generation layer includes a first charge generation layer and a second charge generation layer, wherein the first charge generation layer is located between the first light-emitting layer and the second charge generation layer; The second charge generation layer includes a hole transport host layer and a hole mobility enhancement material doped in the hole transport host layer, wherein the molar mass fraction of the hole mobility enhancement material in the second charge generation layer ranges from 0% to 20%.

12. The display panel according to claim 9, characterized in that, The absolute value of the LUMO energy level of the second electron blocking portion is less than the absolute value of the LUMO energy level of the second electron blocking layer, and the absolute value of the HOMO energy level of the second electron blocking portion is less than the absolute value of the HOMO energy level of the second electron blocking layer. The absolute value of the LUMO energy level of the third electron blocking section is less than the absolute value of the LUMO energy level of the second electron blocking layer, and the absolute value of the HOMO energy level of the third electron blocking section is less than the absolute value of the HOMO energy level of the second electron blocking layer.

13. The display panel according to any one of claims 1 to 7, characterized in that, The first light-emitting unit is configured to emit blue light, the second light-emitting unit is configured to emit green light, and the third light-emitting unit is configured to emit red light.

14. A display device, characterized in that, The display panel includes any one of claims 1 to 13.

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