Composition, thin film, preparation method of thin film, photoelectric device and display device

Abstract

The invention discloses a composition, a thin film, a preparation method of the thin film, a photoelectric device and a display device, and relates to the technical field of display. The composition comprises inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH. In the composition provided by the invention, the modifier can improve the defects of the inorganic nanoparticles.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a composition, a thin film and its preparation method, an optoelectronic device, and a display apparatus. Background Technology

[0002] Nanoparticles refer to microscopic particles with sizes on the nanometer scale, at least less than 100 nanometers in one dimension. Inorganic nanoparticles possess characteristics such as small size effect, surface and interface effect, quantum size effect, macroscopic quantum tunneling effect, strong adsorption capacity and chemical activity, and strong permeability, and are widely used in various fields.

[0003] However, the development of nanoparticles is limited by the large number of surface defects. Summary of the Invention

[0004] In view of the above, this application provides a composition, a thin film and a method for preparing the same, an optoelectronic device, and a display device.

[0005] The embodiments of this application are implemented as follows: a composition comprising inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH;

[0006] Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof.

[0007] L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

[0008] Accordingly, embodiments of this application also provide a thin film, the material of which includes inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH;

[0009] Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof.

[0010] L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

[0011] Accordingly, embodiments of this application also provide a method for preparing a thin film, comprising the following steps:

[0012] The above-described composition is provided, the composition comprising inorganic nanoparticles and a modifier;

[0013] The composition is deposited to obtain a thin film.

[0014] Accordingly, this application also provides an optoelectronic device, including an anode, an active layer, an electronic functional layer, and a cathode stacked together; wherein the electronic functional layer includes the thin film described above, or a thin film prepared by the above preparation method.

[0015] Accordingly, this application also provides a display device, which includes the above-mentioned optoelectronic device.

[0016] In the composition provided in this application, the modifier can improve the defects of inorganic nanoparticles. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of the supramolecular compound in the composition provided in the embodiments of this application;

[0019] Figure 2 This is a flowchart of the preparation method of the composition provided in the embodiments of this application;

[0020] Figure 3 This is a schematic diagram of the structure of the optoelectronic device provided in the embodiments of this application;

[0021] Figure 4 This is a scanning electron microscope image of the thin film provided in Embodiment 1 of this application;

[0022] Figure 5 This is a scanning electron microscope image of the thin film provided in Comparative Example 1 of this application.

[0023] Figure label:

[0024] Optoelectronic devices 100;

[0025] Thin film 10; anode 20; active layer 30; cathode 40; hole functional layer 50. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0027] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0028] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0029] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0030] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0031] In this application, L is a linking group with two points at both ends. When L is formed by multiple combinations, the linking order can be changed, and all possible linking combinations fall within the protection scope of L in this application.

[0032] Nanoparticles are commonly used as the electronic functional layer material in optoelectronic devices. The surface of nanoparticles contains various ligands, such as hydroxyl groups. These ligands are prone to dehydration condensation reactions, which not only lead to nanoparticle aggregation and affect their performance, but the released water can also further impact the operation of the optoelectronic device. In optoelectronic devices, the interfacial connection between the electronic functional layer and the light-emitting layer is unstable, affecting the luminous efficiency and stability of the device. Furthermore, the electron mobility of existing N-type semiconductors is much higher than that of P-type semiconductors, while the hole mobility is lower. The significant difference in electron and hole injection efficiencies leads to carrier imbalance, which is detrimental to hole-electron recombination and luminescence.

[0033] The technical solution of this application is as follows:

[0034] In a first aspect, embodiments of this application provide a composition comprising inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH;

[0035] Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof.

[0036] L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

[0037] The composition provided in this application has an Ar ring structure in the modifier that has conjugated electrons, which can further form P-π conjugation with the hydroxyl group O in -COOH, forming a stable free radical signal, enhancing the electron cloud density of Ar, thereby enhancing the electrophilic substitution activity and improving the conductivity. The modifier can also effectively improve the defect states of inorganic nanoparticles, regulate the electron transport rate of the composition, and hinder the dehydration condensation and aggregation between inorganic nanoparticles, thereby improving the dispersibility. In addition, the modifier introduces a large number of groups, such as carboxyl groups, which can be linked with ligands on the surface of other materials, such as quantum dots, thereby enhancing the tight connection between the film formed by the composition and other adjacent film layers and improving the interfacial stability.

[0038] In some embodiments, the mass ratio of the inorganic nanoparticles to the modifier is 20:(1-4), for example, 20:1.2, 20:1.5, 20:1.8, 20:2, 20:2.2, 20:2.5, 20:2.8, 20:3, 20:3.2, 20:3.5, 20:3.8, etc. Within this range of mass ratios, the modifier is beneficial for adjusting the electron mobility of the inorganic nanoparticles, improving defects in the inorganic nanoparticles, inhibiting the aggregation of inorganic nanoparticles, and improving the performance of the inorganic nanoparticles.

[0039] In some embodiments, Ar is selected from arylene groups having 10 to 30 substituted or unsubstituted cyclic atoms, heteroarylene groups having 10 to 30 substituted or unsubstituted cyclic atoms, or combinations thereof.

[0040] In some embodiments, Ar is selected from one or more of phenylene, biphenylene, terphenylene, naphthylene, anthraceneylene, phenanthreneylene, carbazolyl, benzo[carbazolyl], triphenylamine, thiopheneylene, furanylene, pyrrolylene, benzo[furanyl], benzo[thiopheneylene, benzo[pyrrolylene], pyridylene, and spirodifluorene.

[0041] In some embodiments, L is selected from substituted or unsubstituted C3-C8 alkylene or C3-C8 alkenylene, wherein one or more hydrogen atoms in the alkylene or alkenylene are independently substituted by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN.

[0042] In some embodiments, the modifier is an azide amino acid having a benzene ring.

[0043] Further, the azidoamino acid having a benzene ring includes one or more of 4-azido-L-phenylalanine (CAS: 33173-53-4), 4-azido-D-phenylalanine (CAS: 1241681-80-0), N-fluorenylmethoxycarbonyl-L-4-azidophenylalanine (CAS: 163217-43-4), (S)-3-azido-2-(FMOC-amino)propionic acid (CAS: 684270-46-0), and 4-azido-N-[(1,1-dimethylethoxy)carbonyl]-D-phenylalanine (CAS: 214630-05-4).

[0044] In some embodiments, the average particle size of the inorganic nanoparticles is 4 nm to 7 nm, for example, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, etc. It should be noted that in this application, the particle size of the inorganic nanoparticles is measured using a TEM transmission electron microscope.

[0045] In some embodiments, the inorganic nanoparticles include N-type inorganic nanoparticles.

[0046] Further, the material of the N-type inorganic nanoparticles includes one or more of the following: a first doped metal oxide particle, a first undoped metal oxide particle, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material includes one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0047] In some embodiments, the inorganic nanoparticles are further connected to oxygen-containing ligands.

[0048] Furthermore, the oxygen-containing ligand includes a hydroxyl group.

[0049] In some embodiments, the mass ratio of the oxygen-containing ligand to the inorganic nanoparticles is 1:(15-20), for example, it can be 1:16, 1:17, 1:18, 1:19, etc.

[0050] In some embodiments, the composition further includes a first solvent.

[0051] Furthermore, in the composition, the combined mass concentration of the inorganic nanoparticles and the modifier is 20 mg / mL to 30 mg / mL, for example, 22 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 28 mg / mL, etc. Within this mass concentration range, the dispersion and dissolution of the inorganic nanoparticles and the modifier are beneficial.

[0052] In some embodiments, the first solvent includes one or more of dichloromethane, chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0053] Secondly, please refer to Figure 1This application provides a thin film 10, the material of which includes inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH;

[0054] Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof.

[0055] L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

[0056] In the thin film 10 provided in this application, the -N3 azide group in the modifier can be linked to the inorganic nanoparticles, allowing the modifier to be adsorbed on the surface of the inorganic nanoparticles, hindering the dehydration condensation and aggregation between the inorganic nanoparticles, improving the dispersibility of the composition, and effectively improving the defect states of the inorganic nanoparticles, thereby regulating the electron transport rate of the composition. In addition, the modifier introduces a large number of groups, which can be linked to ligands on the surface of other materials such as quantum dots, thereby enhancing the tight connection between the thin film 10 and other adjacent film layers and improving the interface stability.

[0057] The materials of the inorganic nanoparticles and the modifier are described above and will not be repeated here.

[0058] In some embodiments, the inorganic nanoparticles and the modifier in the thin film 10 are connected by chemical bonds. Further, the chemical bonds include one or more of nitrogen-oxygen bonds, nitrogen-sulfur bonds, and nitrogen-selenium bonds. Nitrogen-oxygen bonds, nitrogen-sulfur bonds, and nitrogen-selenium bonds have electron-withdrawing capabilities, which can reduce the electron transport rate of the composition, making it more balanced with the hole transport rate.

[0059] Specifically, when the material of the N-type inorganic nanoparticles includes the first doped metal oxide particles and / or the first undoped metal oxide particles, the azide group -N3 in the modifier forms a nitrogen-oxygen bond with the oxygen in the first doped metal oxide particles and / or the first undoped metal oxide particles.

[0060] When the material of the N-type inorganic nanoparticles includes the IIB-VIA group semiconductor material and / or the IB-IIIA-VIA group semiconductor material, the -N3 in the modifier forms the nitrogen-sulfur bond or the nitrogen-selenium bond with the S or Se in the IIB-VIA group semiconductor material and / or the IB-IIIA-VIA group semiconductor material, respectively.

[0061] When the inorganic nanoparticles are further connected to oxygen-containing ligands, the azide group -N3 in the modifier forms a nitrogen-oxygen bond with the oxygen in the oxygen-containing ligand.

[0062] In some embodiments, the thickness of the thin film 10 is 40nm to 120nm, for example, it can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, etc.

[0063] Thirdly, please refer to Figure 2 This application also provides a method for preparing a thin film 10, comprising the following steps:

[0064] S11. A composition is provided, the composition comprising inorganic nanoparticles and a modifier, the modifier having the chemical formula N3-Ar-L-COOH;

[0065] S12. Deposit the composition to obtain film 10.

[0066] The materials of the inorganic nanoparticles and the modifier are described above and will not be repeated here.

[0067] It is understood that the thin film 10 can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0068] In S11:

[0069] In some embodiments, the method for preparing the composition includes the following steps:

[0070] S111. Provide inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH;

[0071] S112. The inorganic nanoparticles and the modifier are mixed to obtain a composition.

[0072] In some embodiments, mixing the inorganic nanoparticles and the modifier includes:

[0073] An inorganic nanoparticle dispersion and a modifier dispersion are provided, wherein the inorganic nanoparticle dispersion comprises the inorganic nanoparticles and a second solvent, and the modifier dispersion comprises the modifier and a third solvent;

[0074] The inorganic nanoparticle dispersion and the modifier dispersion are mixed to obtain a composition.

[0075] In some embodiments, the second solvent and the third solvent each independently include one or more of the following: dichloromethane, chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0076] In some embodiments, the inorganic nanoparticle dispersion has a mass concentration of 3 mg / mL to 10 mg / mL, for example, 4 mg / mL, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, etc. Within this mass concentration range, the dispersion and dissolution of the inorganic nanoparticles are favorable.

[0077] In some embodiments, the inorganic nanoparticle dispersion also includes a surfactant.

[0078] Further, the surfactant includes one or more of sodium dodecyl sulfonate, sodium dodecyl sulfate, sodium monooctadecyl sulfonate succinate, linear dodecylbenzene sulfonic acid, sodium dodecyl diphenyl ether disulfonate, sodium allyloxyhydroxypropane sulfonate, sodium hydroxypropane sulfonate methacrylate, sodium 2-acrylamido-2-methylpropane sulfonate, sodium allyloxysulfonate, sodium vinyl sulfonate, and sodium dodecylbenzene sulfonate.

[0079] In the inorganic nanoparticle dispersion, the mass ratio of the inorganic nanoparticles to the surfactant is (3-5):1, for example, it can be 3.2:1, 3.5:1, 3.8:1, 4:1, 4.2:1, 4.5:1, 4.8:1, etc. Within the range of the mass ratio, the surfactant can further promote the uniform dispersion of the inorganic nanoparticles.

[0080] In some embodiments, the mass concentration of the modifier in the dispersion is 40 mg / mL to 100 mg / mL, for example, 50 mg / mL, 60 mg / mL, 70 mg / mL, 80 mg / mL, 90 mg / mL, etc. Within this mass concentration range, the dispersion and dissolution of the modifier are favorable.

[0081] In some embodiments, the mass ratio of the inorganic nanoparticles to the modifier is 20:(1-4), for example, 20:1.2, 20:1.5, 20:1.8, 20:2, 20:2.2, 20:2.5, 20:2.8, 20:3, 20:3.2, 20:3.5, 20:3.8, etc. Within this range of mass ratios, the modifier is beneficial for adjusting the electron mobility of the inorganic nanoparticles, improving defects in the inorganic nanoparticles, inhibiting the aggregation of inorganic nanoparticles, and improving the performance of the inorganic nanoparticles.

[0082] In some embodiments, mixing the inorganic nanoparticle dispersion and the modifier dispersion further includes stirring. Stirring facilitates uniform mixing of the inorganic nanoparticle dispersion and the modifier dispersion.

[0083] Furthermore, the stirring temperature is 3℃ to 10℃, for example, 4℃, 5℃, 6℃, 7℃, 8℃, 9℃, etc. The stirring time is 5h to 10h, for example, 5.5h, 6h, 6.5h, 7h, 7.5h, 8h, 8.5h, 9h, 9.5h, etc. Under these stirring conditions, it is beneficial for the inorganic nanoparticles in the inorganic nanoparticle dispersion and the modifier in the modifier dispersion to fully contact, promoting the modifier to adjust the electron mobility of the inorganic nanoparticles and improve their defects. In addition, the stirring temperature can prevent the growth and aggregation of inorganic nanoparticles, promoting their dispersion.

[0084] In some embodiments, before stirring, the mixing of the inorganic nanoparticle dispersion and the modifier dispersion further includes ultrasonic dispersion. Ultrasonic dispersion promotes the dispersion and dissolution of inorganic nanoparticles and modifiers in the inorganic nanoparticle dispersion and the modifier dispersion, resulting in a more uniform mixture of inorganic nanoparticles and modifiers.

[0085] Furthermore, the ultrasonic dispersion frequency is 40kHz to 60kHz, for example, 42kHz, 45kHz, 48kHz, 50kHz, 52kHz, 55kHz, 58kHz, etc.; the ultrasonic dispersion time is 10min to 30min, for example, 12min, 15min, 18min, 20min, 22min, 25min, 28min, etc. Thus, under the aforementioned ultrasonic dispersion conditions, the contact efficiency between inorganic nanoparticles and the modifier can be promoted, and during the ultrasonic dispersion process, under flowing conditions, the aggregation of inorganic nanoparticles can be further prevented.

[0086] In some embodiments, after mixing the inorganic nanoparticle dispersion and the modifier dispersion, the process further includes washing and drying to obtain the composition. Washing can be performed using conventional cleaning agents in the art, such as deionized water or methanol. Drying can be performed using conventional methods in the art, such as natural drying, oven drying, vacuum drying, or reduced pressure drying.

[0087] In some embodiments, after drying, a first solvent is added to obtain a composition.

[0088] The preparation method of the composition provided in this application is simple to operate and can fully combine inorganic nanoparticles and modifiers to effectively prepare high-performance compositions.

[0089] In S12:

[0090] In some embodiments, the deposition of the composition comprises depositing a composition containing inorganic nanoparticles, a modifier, and a first solvent.

[0091] In some embodiments, annealing is further included after the deposition of the composition. Annealing can promote the formation of chemical bonds between the inorganic nanoparticles and the modifier, thereby enhancing the effect of the modifier on the inorganic nanoparticles, adjusting electron mobility, improving defects in the inorganic nanoparticles, and reducing the aggregation of the inorganic nanoparticles.

[0092] Furthermore, the annealing temperature is 60℃ to 80℃, for example, 62℃, 65℃, 68℃, 70℃, 72℃, 75℃, 78℃, etc.; the annealing time is 15min to 40min, for example, 18min, 20min, 22min, 25min, 28min, 30min, 32min, 35min, 38min, etc. Thus, under the annealing conditions described above, it is beneficial to remove the first solvent, improve the film-forming properties of the electronic functional layer, and promote the formation of chemical bonds between the inorganic nanoparticles and the modifier in the composition.

[0093] Fourthly, please refer to Figure 3 This application also provides an optoelectronic device 100, which includes an anode 20, an active layer 30, an electronic functional layer and a cathode 40 stacked together; wherein the electronic functional layer includes the above-described thin film 10, or includes the thin film 10 prepared by the above-described preparation method.

[0094] In the optoelectronic device 100 provided in this application, the thin film 10 or the thin film 10 prepared by the composition is applied to the electronic functional layer of the optoelectronic device 100. This can improve the defects of inorganic nanoparticles, avoid the aggregation of inorganic nanoparticles in the electronic functional layer that affects the performance of the electronic functional layer, and at the same time avoid the water generated by the aggregation of inorganic nanoparticles from damaging the optoelectronic device 100. Moreover, the modifier can reduce the electron mobility of the electronic functional layer, making it more balanced with hole injection, which is beneficial to improving the luminous efficiency of the optoelectronic device 100. In addition, the modifier of the composition in the electronic functional layer can be connected with the material in the active layer 30, so that the electronic functional layer and the active layer 30 are tightly connected, enhancing stability and extending the service life of the optoelectronic device 100.

[0095] The electronic functional layer includes one or more of an electron injection layer and an electron transport layer.

[0096] In some embodiments, the optoelectronic device 100 includes an upright optoelectronic device 100 or an inverted optoelectronic device 100.

[0097] In some embodiments, the optoelectronic device 100 includes a light-emitting diode.

[0098] In some embodiments, the active layer 30 includes a light-emitting layer, and the material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dots.

[0099] The organic light-emitting material may be selected from, but is not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)]), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex (excitoplex) light-emitting materials.

[0100] The quantum dots may be selected from, but are not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0101] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be selected from, but are not limited to, one or more compounds from group II-VI, group IV-VI, group III-V, and group I-III-VI. The shell of the core-shell quantum dots may consist of one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0102] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0103] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I- One or more of them.

[0104] In some embodiments, ligands are attached to the quantum dots, and the ligands and the modifiers are connected at the interface between the active layer 30 and the electronic functional layer. This connection between the ligands and the modifiers allows for a tighter connection between the electronic functional layer and the active layer 30, improving the stability of the optoelectronic device 100.

[0105] The ligands include one or more of the following: aliphatic amine ligands with 1 to 24 carbon atoms, fatty acid ligands with 1 to 24 carbon atoms, carboxyl ligands, phosphate ligands, halide ion ligands, thiol ligands with 1 to 24 carbon atoms, trialiphatic phosphine with 9 to 30 carbon atoms, triarylphosphine with 18 to 30 carbon atoms, trialiphatic phosphine oxide with 9 to 30 carbon atoms, and triarylphosphine oxide with 18 to 30 carbon atoms.

[0106] The aliphatic amine ligands having 1 to 24 carbon atoms include one or more of oleylamine, n-decylamine, octylamine, dioctylamine, trioctylamine, dodecylamine, myristicamine, palmitamine, and stearylamine.

[0107] The fatty acid ligands having 1 to 24 carbon atoms include one or more of oleic acid, decanoic acid, caprylic acid, dicaprylic acid, tricaprylic acid, dodecanoic acid, myristic acid, palmitic acid, stearic acid, thioglycolic acid, and thiopropionic acid.

[0108] The carboxylate ligand is selected from one or more of magnesium carboxylate ligands, calcium carboxylate ligands, aluminum carboxylate ligands, zirconium carboxylate ligands, lithium carboxylate ligands, sodium carboxylate ligands, and barium carboxylate ligands. The carboxyl group in the carboxylate ligand is a fatty acid ion with 1 to 20 carbon atoms.

[0109] The phosphate ligand is selected from one or more of magnesium phosphate ligand, calcium phosphate ligand, aluminum phosphate ligand, zirconium phosphate ligand, lithium phosphate ligand, sodium phosphate ligand, and barium phosphate ligand.

[0110] The halide ion ligand is selected from one or more of fluoride ions, chloride ions, bromide ions, and iodide ions.

[0111] The thiol ligand having 1 to 24 carbon atoms is selected from one or more of 1,2-ethanedithiol, propanethiol, butanethiol, octylthiol, dodecanethiol, octadecylthiol, benzylthiol, 1,2-benzenethiol, 1,3-benzenethiol, and 1,4-benzenethiol.

[0112] The trialiphatic phosphine having 9 to 30 carbon atoms is selected from one or more of tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, trioctylphosphine, trinonylphosphine, and tridecylphosphine.

[0113] The triarylphosphine having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine, tri(m-toluene)phosphine, tri(2-toluene)phosphine, and tri(p-methylphenyl)phosphine.

[0114] The trialiphatic phosphine oxide with 9 to 30 carbon atoms is selected from one or more of tripropylphosphine oxide, tributylphosphine oxide, tripentylphosphine oxide, trihexylphosphine oxide, triheptylphosphine oxide, trioctylphosphine oxide, trinonylphosphine oxide, and tridecylphosphine oxide.

[0115] The triarylphosphine oxide having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine oxide, tri(m-toluene)phosphine oxide, tri(2-toluene)phosphine oxide, and tri(p-methylphenyl)phosphine oxide.

[0116] In some embodiments, the anode 20 and the cathode 40 each independently comprise one or more of a metal, a carbon material, and a metal oxide; the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide comprises a metal oxide electrode or a composite electrode in which a metal is disposed between doped or undoped transparent metal oxides, the material of the metal oxide electrode comprising one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO; the composite electrode comprises one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. In this context, " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode that includes stacked AZO, Ag, and AZO layers.

[0117] In some embodiments, the optoelectronic device 100 further includes a hole functional layer 50 located between the anode 20 and the active layer 30.

[0118] In some embodiments, the hole functional layer 50 is made of materials including 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, and terbium-doped phosphate-based green... Luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzphenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy] [-1,4-Phenylacetene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spiroNPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, undoped graphene, second-doped metal oxide The metal oxide particles are selected from one or more of the following: metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of the following: MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the second doped metal oxide particles includes one or more of the following: Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of the following: CuS, MoS3, and WS3. The metal selenides include one or more of the following: MoSe3 and WSe3. The metal nitrides include p-type gallium nitride.

[0119] Fifthly, embodiments of this application also provide a display device, the display device including the above-described optoelectronic device 100.

[0120] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0121] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0122] Example 1

[0123] This embodiment provides a composition and a thin film prepared therefrom. The composition includes inorganic nanoparticles ZnO and a modifier 4-azido-L-phenylalanine. The method for preparing the thin film is as follows:

[0124] ZnO containing hydroxyl ligands on its surface was dissolved in ethanol, and sodium dodecyl sulfonate was added to form a ZnO dispersion with a mass concentration of 4 mg / mL. The mass ratio of sodium dodecyl sulfonate to ZnO was 1:4. The modifier 4-azido-L-phenylalanine was dissolved in ethanol to form a modifier dispersion with a mass concentration of 80 mg / mL. The ZnO dispersion and the modifier dispersion were mixed, with the mass ratio of ZnO to 4-azido-L-phenylalanine being 20:3. The mixture was ultrasonically dispersed for 30 min, stirred at 7 °C for 8 h, and then repeatedly filtered and washed 5 times with deionized water and methanol, respectively. After drying, the mixture was dissolved in ethanol to form a 25 mg / mL composition. The mixture was then spin-coated at 3000 rpm for 30 s, followed by baking at 70 °C for 30 min to form a film with a thickness of 80 nm.

[0125] Example 2

[0126] This embodiment is basically the same as Example 1, except that the modifier 4-azido-L-phenylalanine is replaced with (S)-3-azido-2-(FMOC-amino)propionic acid.

[0127] Example 3

[0128] This embodiment is basically the same as Example 1, except that the modifier 4-azido-L-phenylalanine is replaced with 4-azido-N-[(1,1-dimethylethoxy)carbonyl]-D-phenylalanine.

[0129] Example 4

[0130] This embodiment is basically the same as Embodiment 1, except that the inorganic nanoparticles are replaced with ZnS in this embodiment.

[0131] Example 5

[0132] This embodiment is basically the same as Embodiment 1, except that the inorganic nanoparticles are replaced with magnesium-doped ZnO in this embodiment.

[0133] Example 6

[0134] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to 4-azido-L-phenylalanine is 20:4 in this embodiment.

[0135] Example 7

[0136] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to 4-azido-L-phenylalanine is 20:1 in this embodiment.

[0137] Example 8

[0138] This embodiment is basically the same as Embodiment 1, except that the stirring temperature in this embodiment is 10°C.

[0139] Example 9

[0140] This embodiment is basically the same as Embodiment 1, except that the stirring temperature in this embodiment is 3°C.

[0141] Example 10

[0142] This embodiment is basically the same as Embodiment 1, except that the stirring time in this embodiment is 10 hours.

[0143] Example 11

[0144] This embodiment is basically the same as Embodiment 1, except that the stirring time in this embodiment is 5 hours.

[0145] Example 12

[0146] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the thin film in this embodiment is 80°C.

[0147] Example 13

[0148] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the film in this embodiment is 60°C.

[0149] Example 14

[0150] This embodiment is basically the same as Embodiment 1, except that the annealing time of the film in this embodiment is 40 minutes.

[0151] Example 15

[0152] This embodiment is basically the same as Embodiment 1, except that the annealing time of the film in this embodiment is 15 minutes.

[0153] Example 16

[0154] This embodiment is basically the same as Embodiment 1, except that the thickness of the film in this embodiment is 120nm.

[0155] Example 17

[0156] This embodiment is basically the same as Embodiment 1, except that the thickness of the film in this embodiment is 40nm.

[0157] Comparative Example 1

[0158] This comparative example is basically the same as Example 1, except that the composition does not contain 4-azido-L-phenylalanine.

[0159] Comparative Example 2

[0160] This comparative example is basically the same as Example 4, except that the composition does not contain 4-azido-L-phenylalanine.

[0161] Comparative Example 3

[0162] This comparative example is basically the same as Example 5, except that the composition does not contain 4-azido-L-phenylalanine.

[0163] Comparative Example 4

[0164] This comparative example is basically the same as Example 1, except that the modifier 4-azido-L-phenylalanine is replaced with nitrophenylalanine.

[0165] Comparative Example 5

[0166] This comparative example is basically the same as Example 1, except that the modifier 4-azido-L-phenylalanine is replaced with...

[0167] The films of Example 1 and Comparative Example 1 were subjected to SEM scanning electron microscopy tests, and the results are shown in the figure. Figure 4 and Figure 5 As shown.

[0168] from Figure 4 and Figure 5As can be seen, in the film of Example 1, the inorganic nanoparticles are uniformly dispersed in the film, indicating that the modifier improves the dispersibility of the inorganic nanoparticles. In contrast, in the film of Comparative Example 1, the inorganic nanoparticles agglomerate, affecting the performance of the film.

[0169] The electron mobility of the thin films of Examples 1-17 and Comparative Examples 1-5 were tested respectively, and the results are shown in Table 1.

[0170] The electron mobility test method involves measuring the current density-voltage curve of a single-carrier transport thin-film device (EOD) of an optoelectronic device. The EOD structure is an anode / quantum dot emitting layer / electron transport layer / cathode, with the electron transport layer materials being the compositions of Examples 1-10 and the materials of Comparative Examples 1-2, respectively. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the electron mobility is measured using the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron mobility; where J represents the current density in mA / cm². -2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0171] Table 1

[0172]

[0173]

[0174] As shown in Table 1:

[0175] As shown in Examples 1-5 and Comparative Examples 1-5, when thin films are prepared using the compositions provided in this application, the inorganic nanoparticles and modifiers in the compositions form chemical bonds under annealing conditions, which can reduce the electron mobility of the thin films, but the overall electron mobility is still higher than 3.4 cm⁻¹. 2 V -1 s -1This allows the electron mobility to be within a suitable range, which is more conducive to the balance between electron and hole injection. The modifier in Comparative Example 4 contains benzene rings and carboxylic acids, and the modifier in Comparative Example 5 contains benzene rings and azide groups, but their electron mobility is not significantly different from that of Comparative Example 1 and is still higher than that of the example. This shows that in the film provided by this application, the -N3, -Ar-, and -COOH in the modifier work synergistically to improve the performance of inorganic nanoparticles, thereby making the electron mobility and hole mobility closer and the charge carriers more balanced.

[0176] As can be seen from Examples 1, 6-11 and Comparative Example 1, the ratio of modifier to inorganic nanoparticles and the conditions for forming the composition have a certain influence on the film. The electron mobility of the film generally shows a downward trend compared with Comparative Example 1.

[0177] As can be seen from Examples 1, 12-17 and Comparative Example 1, the thickness of the film and the annealing conditions for forming the film have no significant effect on the electron mobility of the film. The chemical bonds formed between the modifier and the inorganic nanoparticles can reduce the electron mobility of the film, which is more in line with the hole mobility of hole injection.

[0178] Device Example 1

[0179] This embodiment provides an optoelectronic device, the fabrication method of which is as follows:

[0180] The ITO conductive glass was cleaned with a cleaning agent to initially remove the stains on the surface. Then, it was ultrasonically cleaned for 20 minutes each in deionized water, acetone, anhydrous ethanol, and deionized water to remove the impurities on the surface. Finally, it was dried with high-purity nitrogen to form the ITO anode.

[0181] PEDOT:PSS was spin-coated onto the ITO anode to form a hole injection layer with a thickness of 30 nm.

[0182] An 8 mg / mL TFB dispersion was spin-coated onto the hole injection layer at a spin speed of 3000 rpm for 30 s, and then baked at 150 °C for 30 min to form a hole transport layer with a thickness of 40 nm.

[0183] CdSe quantum dots were dissolved in n-octane solvent and spin-coated onto the hole transport layer at a speed of 3000 rpm for 30 s. The mixture was then baked at 80 °C for 10 min to form a light-emitting layer with a thickness of 40 nm.

[0184] A thin film (electron transport layer) was prepared according to the method of Example 1;

[0185] Ag is deposited on the electron transport layer by thermal evaporation, with a vacuum level not exceeding 3 x 10⁻⁶. -4 Pa, with a velocity of 1 angstrom / second, to form a cathode with a thickness of 80 nm;

[0186] Packaging yields optoelectronic devices.

[0187] Device Examples 2-17

[0188] Device Examples 2 to 17 are basically the same as Device Example 1, except that the electron transport layer in Device Examples 2 to 17 is prepared by the same thin film preparation method as in Examples 2 to 17.

[0189] Device Comparison Examples 1-5

[0190] The devices in Comparative Examples 1 to 5 are basically the same as those in Device Example 1, except that the electron transport layer in Comparative Examples 1 to 5 is prepared by the same thin film preparation method as in Comparative Examples 1 to 5.

[0191] The external quantum efficiency and lifetime (T95@1000nit) of the optoelectronic devices in Device Examples 1-17 and Device Comparative Examples 1-5 were tested respectively, and the results are shown in Table 2.

[0192] The external quantum efficiency (EQE) is measured as the ratio of electron-hole pairs injected into a quantum dot to emitted photons, expressed as a percentage (%). It is a crucial parameter for evaluating the quality of electroluminescent devices and can be obtained using an EQE optical testing instrument. The specific calculation formula is as follows:

[0193]

[0194] Where, η e For optical output coupling efficiency, η r χ is the ratio of recombination carriers to injected carriers, and K is the ratio of excitons producing photons to the total number of excitons. R K is the radiation process rate. NR This represents the rate of a non-radiative process.

[0195] Test conditions: Conducted at room temperature with an air humidity of 30-60%.

[0196] The measurement method for lifetime T95@1000nit is as follows: Under constant current or voltage drive, the time required for the brightness of the device to decrease to a certain percentage of its maximum brightness is defined as T95. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000nit is measured as T95@1000nit. The specific calculation formula is as follows:

[0197]

[0198] Among them, T95L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0199] Table 2

[0200]

[0201]

[0202] As shown in Table 2:

[0203] As can be seen from Device Examples 1-5 and Device Comparative Examples 1-5, using the thin film provided in this application as the electron transport layer in the optoelectronic device effectively improves the external quantum efficiency and lifespan of the optoelectronic device compared to Device Comparative Examples 1-5. This is because the modifier improves the defect states of the inorganic nanoparticles and adjusts the electron mobility to make it more balanced with the hole mobility, promoting the effective recombination of electrons and holes for luminescence. The functional groups in the modifier can also connect with quantum dots, making the interface between the electron transport layer and the luminescent layer more stable, improving the stability of the optoelectronic device, and thus extending the lifespan of the optoelectronic device.

[0204] As can be seen from Device Examples 1, 6-11 and Device Comparative Example 1, within the range of the mass ratio of modifier and inorganic nanoparticles provided in this application, and within the range of conditions for forming the composition, the performance of the optoelectronic device is significantly better than that of the device comparative example.

[0205] As can be seen from Device Examples 1, 12-17 and Device Comparative Example 1, the external quantum efficiency and lifespan of the optoelectronic devices of Device Examples 1, 12-17 are approximately twice that of Device Comparative Example 1. The performance of the optoelectronic device provided in this application is significantly improved compared to Device Comparative Example 1, effectively improving the external quantum efficiency of the optoelectronic device and extending its lifespan.

[0206] The compositions, thin films and their preparation methods, optoelectronic devices and display devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composition, characterized in that, It includes inorganic nanoparticles and a modifier, wherein the chemical formula of the modifier is N3-Ar-L-COOH; Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof. L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

2. The composition according to claim 1, characterized in that, The mass ratio of the inorganic nanoparticles to the modifier is 20:(1-4); and / or Ar is selected from arylene groups having 10 to 30 substituted or unsubstituted ring atoms, heteroarylene groups having 10 to 30 substituted or unsubstituted ring atoms, or combinations thereof; and / or L is selected from substituted or unsubstituted C3-C8 alkylene or C3-C8 alkenylene groups, wherein one or more hydrogen atoms in the alkylene or alkenylene group are independently substituted by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN; and / or Ar is selected from one or more of the following: phenylene, biphenylene, terphenylene, naphthylene, anthraceneylene, phenanthreneylene, carbazolyl, benzo[carbazolyl], triphenylamine, thiopheneylene, furanylene, pyrrolylene, benzo[furanyl], benzo[thiopheneylene, benzo[pyrrolylene], pyridylene, and spirodifluorene.

3. The composition according to claim 1, characterized in that, The modifier is an azide amino acid with a benzene ring; the azide amino acid with a benzene ring includes one or more of 4-azido-L-phenylalanine, 4-azido-D-phenylalanine, N-fluorenylmethoxycarbonyl-L-4-azidophenylalanine, (S)-3-azido-2-(FMOC-amino)propionic acid, and 4-azido-N-[(1,1-dimethylethoxy)carbonyl]-D-phenylalanine; and / or The inorganic nanoparticles include N-type inorganic nanoparticles. The materials of the N-type inorganic nanoparticles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The inorganic nanoparticles have an average particle size of 4 nm to 7 nm; and / or The inorganic nanoparticles are further connected to oxygen-containing ligands; optionally, the oxygen-containing ligands include hydroxyl groups; optionally, the mass ratio of the oxygen-containing ligands to the inorganic nanoparticles is 1:(15-20).

4. The composition according to claim 1, characterized in that, The composition further includes a first solvent; Optionally, in the composition, the combined mass concentration of the inorganic nanoparticles and the modifier is 20 mg / mL to 30 mg / mL; Optionally, the first solvent includes one or more of dichloromethane, chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

5. A thin film, characterized in that, The material of the film includes inorganic nanoparticles and a modifier, wherein the inorganic nanoparticles and the modifier are connected by chemical bonds, and the chemical formula of the modifier is N3-Ar-L-COOH; Ar is selected from arylene groups having 6 to 60 substituted or unsubstituted ring atoms, heteroarylene groups having 5 to 60 substituted or unsubstituted ring atoms, or combinations thereof. L is selected from -O-, -S-, -CH=N-, -N=N-, -C≡C-, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 The alkylene group, wherein one or more hydrogen atoms in the alkylene group are independently replaced by -NH2, -F, -Cl, -Br, -I, -OH, -COOH, -NO2, -SO3H, -CHO, -SH, -CN, and the C2-C of the alkylene group is... 12 The C3-C of the alkylene group or the alkenylene group 12 In the alkenyl group, one -CH2- or at least two non-adjacent -CH2- groups are surrounded by -O-, -S-, -NH-, Or -C = C- replaces each other in a way that is not directly connected.

6. The thin film as described in claim 5, characterized in that, The mass ratio of the inorganic nanoparticles to the modifier is 20:(1-4); and / or The chemical bonds include one or more of nitrogen-oxygen bonds, nitrogen-sulfur bonds, and nitrogen-selenium bonds; and / or The modifier is an azide amino acid with a benzene ring; the azide amino acid with a benzene ring includes one or more of 4-azido-L-phenylalanine, 4-azido-D-phenylalanine, N-fluorenylmethoxycarbonyl-L-4-azidophenylalanine, (S)-3-azido-2-(FMOC-amino)propionic acid, and 4-azido-N-[(1,1-dimethylethoxy)carbonyl]-D-phenylalanine; and / or The inorganic nanoparticles include N-type inorganic nanoparticles. The materials of the N-type inorganic nanoparticles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The inorganic nanoparticles are further connected to oxygen-containing ligands; optionally, the oxygen-containing ligands include hydroxyl groups; optionally, the mass ratio of the oxygen-containing ligands to the inorganic nanoparticles is 1:(15-20); and / or The thickness of the film is 40 nm to 120 nm.

7. The thin film as claimed in claim 6, characterized in that, When the N-type inorganic nanoparticles comprise the first doped metal oxide particles and / or the first undoped metal oxide particles, the -N3 in the modifier forms a nitrogen-oxygen bond with the oxygen in the first doped metal oxide particles and / or the first undoped metal oxide particles; and / or When the N-type inorganic nanoparticles comprise the IIB-VIA group semiconductor material and / or the IB-IIIA-VIA group semiconductor material, the -N3 in the modifier forms the nitrogen-sulfur bond or the nitrogen-selenium bond with the S or Se in the IIB-VIA group semiconductor material and / or the IB-IIIA-VIA group semiconductor material, respectively; and / or When the inorganic nanoparticles are further connected to oxygen-containing ligands, the -N3 in the modifier forms a nitrogen-oxygen bond with the oxygen in the oxygen-containing ligands.

8. A method for preparing a thin film, characterized in that, Includes the following steps: Provide a composition according to any one of claims 1 to 4, the composition comprising inorganic nanoparticles and a modifier; The composition is deposited to obtain a thin film.

9. The preparation method according to claim 8, characterized in that, The preparation method of the composition includes the following steps: An inorganic nanoparticle dispersion and a modifier dispersion are provided, wherein the inorganic nanoparticle dispersion comprises the inorganic nanoparticles and a second solvent, and the modifier dispersion comprises the modifier and a third solvent; The inorganic nanoparticle dispersion and the modifier dispersion are mixed to obtain a composition.

10. The preparation method according to claim 9, characterized in that, The mass ratio of the inorganic nanoparticles to the modifier is 20:(1-4); and / or In the inorganic nanoparticle dispersion, the mass concentration of the inorganic nanoparticles is 3 mg / mL to 10 mg / mL; and / or In the modified agent dispersion, the mass concentration of the modified agent is 40 mg / mL to 100 mg / mL; The second solvent and the third solvent each independently comprise one or more of the following: dichloromethane, chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or The inorganic nanoparticle dispersion further includes a surfactant; optionally, the surfactant includes one or more of sodium dodecyl sulfonate, sodium dodecyl sulfate, sodium monooctadecylamide sulfonate, linear dodecylbenzene sulfonic acid, sodium dodecyl diphenyl ether disulfonate, sodium allyloxyhydroxypropane sulfonate, sodium hydroxypropane sulfonate, sodium 2-acrylamido-2-methylpropane sulfonate, sodium allyloxysulfonate, sodium vinyl sulfonate, and sodium dodecylbenzene sulfonate; optionally, the mass ratio of the inorganic nanoparticles to the surfactant in the inorganic nanoparticle dispersion is (3-5):1; and / or After depositing the composition, the process further includes annealing; the annealing temperature is 60°C to 80°C and the time is 15 min to 40 min.

11. An optoelectronic device, characterized in that, It includes an anode, an active layer, an electronic functional layer, and a cathode stacked together; wherein the electronic functional layer includes a thin film as described in any one of claims 5 to 7, or a thin film prepared by the preparation method as described in any one of claims 8 to 10.

12. The optoelectronic device as described in claim 11, characterized in that, The active layer includes a light-emitting layer, the material of which includes one or more of organic light-emitting materials and quantum dots; ligands are attached to the quantum dots, and the ligands and the modifiers are connected at the interface between the active layer and the electronic functional layer. The ligands include one or more of the following: aliphatic amine ligands with 1 to 24 carbon atoms, fatty acid ligands with 1 to 24 carbon atoms, carboxyl ligands, phosphate ligands, halide ion ligands, thiol ligands with 1 to 24 carbon atoms, trialiphatic phosphine with 9 to 30 carbon atoms, triarylphosphine with 18 to 30 carbon atoms, trialiphatic phosphine oxide with 9 to 30 carbon atoms, and triarylphosphine oxide with 18 to 30 carbon atoms; Optionally, the aliphatic amine ligand having 1 to 24 carbon atoms includes one or more of oleylamine, n-decylamine, octylamine, dioctylamine, trioctylamine, dodecylamine, myristamine, palmitamine, and stearamine; Optionally, the fatty acid ligand having 1 to 24 carbon atoms includes one or more of oleic acid, decanoic acid, octanoic acid, dioctanoic acid, trioctanoic acid, dodecanoic acid, myristic acid, palmitic acid, stearic acid, thioglycolic acid, and mercaptopropionic acid. Optionally, the carboxylate ligand is selected from one or more of magnesium carboxylate ligand, calcium carboxylate ligand, aluminum carboxylate ligand, zirconium carboxylate ligand, lithium carboxylate ligand, sodium carboxylate ligand, and barium carboxylate ligand; Optionally, the phosphate ligand is selected from one or more of magnesium phosphate ligands, calcium phosphate ligands, aluminum phosphate ligands, zirconium phosphate ligands, lithium phosphate ligands, sodium phosphate ligands, and barium phosphate ligands; Optionally, the halide ion ligand is selected from one or more of fluoride ions, chloride ions, bromide ions, and iodide ions; Optionally, the thiol ligand having 1 to 24 carbon atoms is selected from one or more of 1,2-ethanedithiol, propanethiol, butanethiol, octylthiol, dodecanethiol, octadecylthiol, benzylthiol, 1,2-benzenethiol, 1,3-benzenethiol, and 1,4-benzenethiol. Optionally, the trialiphatic phosphine having 9 to 30 carbon atoms is selected from one or more of tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, trioctylphosphine, trinonylphosphine, and tridecylphosphine; Optionally, the triarylphosphine having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine, tris(m-toluene)phosphine, tris(2-toluene)phosphine, and tris(p-methylphenyl)phosphine; Optionally, the trialilophosphine oxide with 9 to 30 carbon atoms is selected from one or more of tripropylphosphine oxide, tributylphosphine oxide, tripentylphosphine oxide, trihexylphosphine oxide, triheptylphosphine oxide, trioctylphosphine oxide, trinonylphosphine oxide, and tridecylphosphine oxide. Optionally, the triarylphosphine oxide having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine oxide, tri(m-toluene)phosphine oxide, tri(2-toluene)phosphine oxide, and tri(p-methylphenyl)phosphine oxide.

13. The optoelectronic device as described in claim 12, characterized in that, The organic light-emitting materials are selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)], 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)], diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, polymers containing BN covalent bonds, H LCT materials and Exciplex luminescent materials are selected from one or more of the following: the quantum dots are selected from one or more of the following: single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots are selected from one or more of the following: group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the shell of the core-shell quantum dots includes one or more layers; the group II-VI compounds are selected from... CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSe Te, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; wherein the IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Multiple types; the I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2; the core-shell structured quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite quantum dots are made of doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has the general structural formula AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2 + Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; and / or The anode and the cathode each independently comprise one or more of a metal, a carbon material, and a metal oxide; the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide comprises a metal oxide electrode or a composite electrode in which a metal is disposed between doped or undoped transparent metal oxides; the material of the metal oxide electrode comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO; the composite electrode comprises one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The optoelectronic device further includes a hole functional layer located between the anode and the active layer. The material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazolyl)-9-yl)triphenylamine, and tris(carbazolyl)-triphenylamine. Chloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzphenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3', [7'-Dimethyloctyloxy]-1,4-phenylenevinylene, copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spiroNPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, undoped graphene, second doped The metal oxide particles are selected from one or more of the following: heterogeneous metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS3, and WS3. The metal selenides include one or more of MoSe3 and WSe3. The metal nitrides include p-type gallium nitride.

14. A display device, characterized in that, Including the optoelectronic device as described in any one of claims 11 to 13.

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