Light emitting device, display device including the same, and electronic device including the display device

Abstract

The invention relates to a light emitting device, a display device including the light emitting device, and an electronic device including the display device. The light emitting device includes a first electrode; a light emitting layer disposed on the first electrode; and a second electrode disposed on the light emitting layer. The second electrode includes a main layer disposed on the light emitting layer and including a pure metal material; and an anchoring layer disposed on the main layer.

Description

Technical Field

[0001] This disclosure relates to light-emitting devices, display devices including light-emitting devices, and electronic devices including display devices. Background Technology

[0002] With the development of the information society, the demand for display devices for displaying images is increasing in various forms. For example, display devices are used in various electronic devices (such as smartphones, digital cameras, laptops, navigation devices, and smart TVs).

[0003] The display device may be a flat panel display device (e.g., a liquid crystal display device, a field emission display device, or a light-emitting display device). Here, the light-emitting display device may include an organic light-emitting display device (including organic light-emitting devices), an inorganic light-emitting display device (including inorganic light-emitting devices containing inorganic semiconductors), and a micron-light-emitting display device or a nanon-light-emitting display device (including micron-light-emitting devices or nanon-light-emitting devices).

[0004] Organic light-emitting display devices (OLEDs) use self-emissive devices, each comprising an emissive layer made of organic light-emitting materials, to display images. Because OLEDs use self-emissive devices for image display, they offer superior performance in terms of power consumption, response speed, emission efficiency, brightness, and viewing angle compared to other display devices.

[0005] One surface of the display device may be a display surface (the display surface includes a display area for displaying images). A light-emitting area that emits light with corresponding brightness and color may be arranged in the display area. Summary of the Invention

[0006] The display device may include a light-emitting device disposed in the light-emitting area.

[0007] Each of the light-emitting devices in the display device may include a first electrode and a second electrode facing each other, and a light-emitting layer disposed between the first electrode and the second electrode.

[0008] Light from the light-emitting layer can be reflected by one of the first and second electrodes, and emitted to the outside through the other. In one embodiment, when the first electrode reflects light, light from the light-emitting layer can be emitted through the second electrode. In this case, the higher the transmittance of the second electrode, the better the luminous efficiency of the light-emitting device.

[0009] The first electrode can be a pixel electrode disposed in each of the light-emitting areas, while the second electrode can be a common electrode disposed throughout the light-emitting areas. In this case, the lower the resistance of the second electrode, the better the photoelectric conversion efficiency of the light-emitting device.

[0010] Because the second electrode is located on the light-emitting layer, the light-emitting layer is easily damaged when a thin second electrode is fabricated using a plasma deposition process. Therefore, it is difficult to improve the photoelectric conversion efficiency of the light-emitting device.

[0011] The features of this disclosure provide a light-emitting device and a display device including the light-emitting device, the light-emitting device including a second electrode that can be set by a vacuum thermal deposition process and has relatively low resistance and relatively high transmittance.

[0012] However, the features of this disclosure are not limited to those set forth herein. The above and other features of this disclosure will become more apparent to those skilled in the art upon which this disclosure pertains by referring to the specific embodiments of this disclosure given below.

[0013] In embodiments of this disclosure, a light-emitting device is provided, including a first electrode; a light-emitting layer disposed on the first electrode; and a second electrode disposed on the light-emitting layer. The second electrode includes a main layer disposed on the light-emitting layer and comprising a pure metallic material; and an anchoring layer disposed on the main layer.

[0014] In this embodiment, the main layer has a thickness of approximately 5 nanometers (nm) to approximately 30 nm. The pure metallic material includes pure silver. The anchoring layer has a thickness less than that of the main layer.

[0015] In one embodiment, the anchoring layer comprises a metallic material having an atomic mass greater than that of a pure metallic material and / or an atomic radius greater than that of a pure metallic material.

[0016] In an embodiment, the anchoring layer includes at least one of tungsten oxide, indium tin oxide, and indium zinc oxide.

[0017] In an embodiment, the anchoring layer includes at least one of ytterbium (Yb), bismuth (Bi), cesium (Cs), samarium (Sm), and barium (Ba).

[0018] In this embodiment, the thickness of the anchoring layer is approximately 0.5 nm to approximately 3 nm.

[0019] In this embodiment, the first electrode reflects light from the light-emitting layer. The light-emitting layer is disposed on the first electrode. The second electrode is disposed on the light-emitting layer. Light from the light-emitting layer is emitted through the second electrode. The second electrode is covered with an electrode protective layer. An anchoring layer is disposed between the main layer and the electrode protective layer.

[0020] In one embodiment, the light-emitting device further includes a first common layer disposed between the first electrode and the light-emitting layer; and a second common layer disposed between the light-emitting layer and the second electrode. The second common layer includes an electron transport layer disposed on the light-emitting layer; and an electron injection layer disposed between the electron transport layer and the second electrode. The electron injection layer includes ytterbium (Yb).

[0021] In embodiments of this disclosure, a display device is provided, comprising: a substrate including a display region in which a light-emitting region is disposed; a circuit layer disposed on the substrate; and a component layer disposed on the circuit layer. The component layer includes light-emitting devices disposed in the light-emitting region. Each of the light-emitting devices includes: a first electrode disposed on the circuit layer; a light-emitting layer disposed on the first electrode; and a second electrode disposed on the light-emitting layer. The second electrode includes a main layer disposed on the light-emitting layer and comprising a pure metallic material; and an anchoring layer disposed on the main layer.

[0022] In this embodiment, the main layer has a thickness of approximately 5 nm to approximately 30 nm. The pure metallic material includes pure silver. The anchoring layer has a thickness less than that of the main layer.

[0023] In one embodiment, the anchoring layer comprises a metallic material having an atomic mass greater than that of a pure metallic material and / or an atomic radius greater than that of a pure metallic material.

[0024] In an embodiment, the anchoring layer includes at least one of tungsten oxide, indium tin oxide, and indium zinc oxide.

[0025] In an embodiment, the anchoring layer includes at least one of ytterbium (Yb), bismuth (Bi), cesium (Cs), samarium (Sm), and barium (Ba).

[0026] In this embodiment, the thickness of the anchoring layer is approximately 0.5 nm to approximately 3 nm.

[0027] In one embodiment, the display device further includes an electrode protective layer covering a second electrode of the element layer. The first electrode reflects light from the light-emitting layer. Light from the light-emitting layer is emitted through the second electrode. An anchoring layer is disposed between the main layer and the electrode protective layer.

[0028] In one embodiment, the display device further includes a first common layer disposed between the first electrode and the light-emitting layer; and a second common layer disposed between the light-emitting layer and the second electrode. The second common layer includes an electron transport layer disposed on the light-emitting layer; and an electron injection layer disposed between the electron transport layer and the second electrode. The electron injection layer includes ytterbium (Yb).

[0029] In embodiments of this disclosure, an electronic device is provided, comprising: a display device for displaying images; a memory for storing application programs; a processor for executing the application programs and transmitting image data signals and / or input control signals to the display device; and a power supply module for supplying power to the display device. The display device includes: a substrate including a display region in which light-emitting regions are disposed; a circuit layer disposed on the substrate; and a component layer disposed on the circuit layer. The component layer includes light-emitting devices disposed in the light-emitting regions. Each of the light-emitting devices includes: a first electrode disposed on the circuit layer; a light-emitting layer disposed on the first electrode; and a second electrode disposed on the light-emitting layer. The second electrode includes a main layer disposed on the light-emitting layer and comprising a pure metallic material; and an anchoring layer disposed on the main layer.

[0030] In this embodiment, the main layer has a thickness of about 5 nm to about 30 nm. The pure metal material includes pure silver. The anchoring layer has a thickness less than that of the main layer and includes a metal material having an atomic weight and / or an atomic radius larger than that of the pure metal material.

[0031] In this embodiment, the thickness of the anchoring layer is approximately 0.5 nm to approximately 3 nm.

[0032] In one embodiment, the display device further includes an electrode protective layer covering a second electrode of the element layer. The first electrode reflects light from the light-emitting layer. Light from the light-emitting layer is emitted through the second electrode. An anchoring layer is disposed between the main layer and the electrode protective layer.

[0033] In one embodiment, the light-emitting device includes a first electrode and a second electrode facing each other, and a light-emitting layer disposed between the first electrode and the second electrode. The second electrode includes: a main layer comprising a pure metallic material; and an anchoring layer disposed on the main layer.

[0034] In this embodiment, since the main layer of the second electrode disposed on the light-emitting layer comprises a pure metallic material, a vacuum thermal deposition process can be used to deposit the second electrode at a relatively thin thickness of approximately 5 nm to approximately 30 nm. Accordingly, damage to the light-emitting layer caused by the process of depositing the second electrode can be reduced, which can help improve the photoelectric conversion efficiency of the light-emitting device.

[0035] In an embodiment, the second electrode may include an anchoring layer disposed on the main layer, and the anchoring layer may include a metallic material having an atomic weight and / or an atomic radius larger than that of the pure metallic material of the main layer.

[0036] As a result, even when the main layer comprises or is composed of pure metal materials free of impurities, the anchoring layer can reduce defects caused by the diffusion of atoms of the pure metal materials into the surrounding environment or by thermal agglomeration.

[0037] That is, even when impurities are removed, the thin film form of the second electrode can be maintained, so as to improve the uniformity, reliability and lifespan of the light-emitting device.

[0038] In addition, because it can prevent the increase in resistance of the second electrode and the decrease in the light transmittance of the second electrode due to impurities, it can improve the photoelectric conversion efficiency and luminous efficiency of the light-emitting device.

[0039] By including such a light-emitting device in the display device, the brightness and power consumption of the display device can be advantageously improved.

[0040] However, the effects of the embodiments are not limited to those stated herein. The above and other effects of the embodiments will become more apparent to those skilled in the art upon reference to the claims. Attached Figure Description

[0041] The above and other advantages and features of this disclosure will become more apparent from the detailed description of embodiments thereof with reference to the accompanying drawings, wherein:

[0042] Figure 1 Perspective view for illustrating embodiments of the display device;

[0043] Figure 2 To explain Figure 1 A plan view of the display device;

[0044] Figure 3 For along Figure 2 A cross-sectional view taken by line A-A';

[0045] Figure 4 To explain Figure 3 A plan view of the substrate and circuit layers;

[0046] Figure 5 To explain Figure 4 The equivalent circuit diagram of the light-emitting pixel driver;

[0047] Figure 6 To explain Figure 2 A partial plan view of section B;

[0048] Figure 7 A cross-sectional view illustrating an embodiment of the light-emitting pixel driver and the light-emitting device;

[0049] Figure 8 To explain Figure 7 A magnified view of part C;

[0050] Figure 9 Simulation diagram illustrating the distribution of silver atoms in the second common layer, second electrode, and electrode protective layer before heat treatment in the embodiments and comparative examples;

[0051] Figure 10 Simulation diagram illustrating the distribution of silver atoms in the second common layer, second electrode, and electrode protective layer after heat treatment in the embodiments and comparative examples;

[0052] Figure 11 This is a block diagram illustrating an embodiment of the electronic device according to the present disclosure; and

[0053] Figure 12 This is a schematic diagram illustrating various embodiments of the electronic device according to the present disclosure. Detailed Implementation

[0054] Embodiments will now be described more fully below with reference to the accompanying drawings. However, embodiments may be provided in different forms and should not be construed as limiting. Throughout this disclosure, the same reference numerals denote the same components. In the accompanying drawings, the thickness of layers and regions may be enlarged for clarity.

[0055] In order to describe embodiments of this disclosure, some parts that are not related to the description may be omitted.

[0056] It will also be understood that when a layer is referred to as "on" another layer or substrate, it may be directly on the other layer or substrate, or an intermediary layer may be present. In contrast, when an element is referred to as "directly" on another element, an intermediary element may not be present.

[0057] Furthermore, the phrase "in a plan view" refers to the view of a portion of an object from above, and the phrase "in a schematic cross-sectional view" refers to the view of a schematic cross-section taken by vertically cutting a portion of an object from the side. The terms "overlap" or "overlapped" mean that the first object may be above, below, or to the side of the second object, and vice versa. Additionally, the term "overlap" may include lamination, stacking, face or facing, extending, covering or partially covering, or any other suitable term that a person skilled in the art would understand and appreciate. The expression "non-overlapping" may include meanings such as "separated," "placed aside," or "offset," and any other suitable equivalent meaning that a person skilled in the art would understand and appreciate. The terms "face" and "facing" may mean that the first object may be directly or indirectly opposite the second object. In cases where a third object is located between the first and second objects, the first and second objects may be understood as indirectly opposite each other, but still facing each other.

[0058] For ease of description, the spatial relative terms “below,” “under,” “down,” “above,” or “on top,” etc., are used herein to describe the relationship between one element or component and another, as illustrated in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the spatial relative terms are also intended to encompass different orientations of the device in use or operation. For example, in the case of flipping the device illustrated in the drawings, a device positioned “below” or “under” another device may be placed “on top” of that other device. Accordingly, the interpretative term “below” may include both a lower position and an upper position. The device may also be oriented in other directions, and therefore the spatial relative terms may be interpreted differently depending on the orientation.

[0059] When an element is referred to as "connected" or "linked" to another element, the element may be "directly connected" or "directly linked" to the other element, or "electrically connected" or "electrically linked" to the other element through one or more intermediary elements inserted therein. It will be further understood that when the terms "comprises," "comprising," "has," "have," "having," "includes," and / or "including" are used, they may indicate the presence of the described features, integers, steps, operations, elements, components, and / or any combination thereof, but do not preclude the presence or addition of other features, integers, steps, operations, elements, components, and / or any combination thereof.

[0060] It will be understood that although the terms “first,” “second,” or “third,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another, or for the convenience of its description and interpretation. For example, without departing from the teachings herein, when discussing a “first element,” it may be referred to as a “second element” or a “third element,” and similar terms may be used to refer to “second element” and “third element.”

[0061] As used herein, the terms “about” or “approximately” include stated values ​​and mean within an acceptable range of deviations that a person skilled in the art would determine for a particular value, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (e.g., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0062] In the specification and claims, for the purposes of their meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" can be understood to mean "A, B, or A and B". The terms "and" and "or" can be used to connect or separate meanings and are understood to be equivalent to "and / or". In the specification and claims, for the purposes of their meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one selected from the group consisting of...". For example, "at least one of A and B" can be understood to mean "A, B, or A and B".

[0063] Unless otherwise specified or implied, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and shall not be interpreted in an ideal or overly formal sense unless clearly defined in the specification.

[0064] The embodiments will be described below with reference to the accompanying drawings.

[0065] Figure 1 A perspective view illustrating an embodiment of display device 1. Figure 2 To explain Figure 1 A plan view of display device 1. Figure 3 For along Figure 2 A cross-sectional view taken from line A-A'.

[0066] refer to Figure 1 and Figure 2 The display device 1 is a device for displaying moving or still images and can be used as a display screen for each of various products (such as televisions, laptops, monitors, billboards and Internet of Things (“IoT”) devices) and portable electronic devices (such as mobile phones, smartphones, tablet PCs, smartwatches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (“PMPs”), navigation devices and super mobile PCs (“UMPCs”)).

[0067] Display device 1 can be a light-emitting display device (e.g., an organic light-emitting display device including organic light-emitting diodes, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including inorganic semiconductors, and a micron-light-emitting display device or nano-light-emitting display device including micron-light-emitting diodes or nano-light-emitting diodes (micron-LEDs or nano-LEDs)). The following description will primarily be based on display device 1 being an organic light-emitting display device. However, this disclosure is not limited thereto and is applicable to display devices including organic insulating materials, organic light-emitting materials, and metallic materials.

[0068] In the first direction DR1 and the second direction DR2, the display device 1 may be in the form of a flat panel, but is not limited thereto. In embodiments, for example, the display device 1 may include curved surface portions formed at the left and right distal ends of the display device 1 and having constant or variable curvature. In addition, the display device 1 may be elastically shaped into a curved, bent, folded, or rolled-up form.

[0069] The display surface of the display device 1 may have a quadrilateral shape, for example, a rectangular shape having a short side in the first direction DR1 and a long side in the second direction DR2. However, this is only one embodiment, and the display surface of the display device 1 may be implemented in various shapes.

[0070] In one embodiment, the display surface may be formed into a rounded shape so that the angle at which the short side in the first direction DR1 and the long side in the second direction DR2 intersect has a predetermined curvature. In an alternative embodiment, the display surface may be polygonal, circular, or elliptical in shape.

[0071] The display device 1 may include a first substrate 10 that emits light and a second substrate 20 that faces the first substrate 10 on a third-direction DR3 and transmits light.

[0072] Each of the first substrate 10 and the second substrate 20 may be in the form of a flat plate in the plane of the first direction DR1 and the second direction DR2.

[0073] Figure 1 The first substrate 10 is described as being in the form of a flat plate, but this disclosure is not limited thereto. In embodiments, for example, the first substrate 10 may be in the form of a bent at least one long side in the second direction DR2. Additionally, the first substrate 10 may be elastically shaped into a curved, bent, folded, or rolled-up form.

[0074] The display device 1 may further include a circuit layer on the first substrate 10. Figure 3 12) data line ( Figure 4 The display driving circuit 31 that supplies data signals to the DL in the first substrate 10; and the circuit layer for supplying data signals to the first substrate 10. Figure 3The circuit board 32 that supplies various signals and power to the display driver circuit 31 and the display driver circuit 31.

[0075] The display driving circuit 31 or circuit board 32 can supply power to the first power line of the first substrate 10. Figure 4 VDL in the middle supplies the first power supply ( Figure 5 (in ELVDD).

[0076] The display driving circuit 31 can direct the gate driver (built into the first substrate 10) Figure 4 33) Supply gate control signal.

[0077] The display driver circuit 31 may be provided as an integrated circuit (“IC”) chip.

[0078] The integrated circuit chip of the display driving circuit 31 can be directly disposed (e.g., mounted) on the first substrate 10 by means of chip-on-glass (“COG”), chip-on-plastic (“COP”), or ultrasonic bonding. In this case, such as Figure 2 As explained in the diagram, the integrated circuit chip of the display driving circuit 31 can be disposed in an area of ​​the first substrate 10 that does not overlap with the second substrate 20.

[0079] In an alternative embodiment, the integrated circuit chip of the display driving circuit 31 may also be disposed (e.g., mounted) on the circuit board 32.

[0080] The circuit board 32 may include an anisotropic conductive film. The circuit board 32 may be a flexible printed circuit board, a rigid printed circuit board, or a flexible film (e.g., a chip on a film).

[0081] Circuit board 32 can be attached to and electrically connected to a non-display area disposed on the first substrate 10. Figure 4 The signal pads in the NDA (in the NDA) Figure 4 (SPD in the middle).

[0082] refer to Figure 3 The first substrate 10 may include a substrate 11, a circuit layer 12 disposed on the substrate 11, and a component layer 13 disposed on the circuit layer 12.

[0083] The substrate 11 may include a display area from which light is emitted ( Figure 4 The display area (DA) and the non-display area surrounding the display area (DA) Figure 4 (NDA in the text).

[0084] Light-emitting area ( Figure 6 The EA in the display area can be arranged in the display area DA.

[0085] Component layer 13 may include components disposed in the light-emitting area ( Figure 6 The light-emitting device in EA) Figure 5 (LE in the middle).

[0086] Circuit layer 12 may include electrical connections to a light-emitting device. Figure 5 The luminescent pixel driver in the LE) Figure 4 (EPD in the middle).

[0087] The display driving circuit 31 can generate data signals based on the image signals. Figure 5 (VDATA in the middle).

[0088] Light-emitting pixel driver ( Figure 4 The EPD in the middle can have data signals corresponding to those supplied from the display driver circuit 31. Figure 5 The size of the drive current (VDATA) in the middle Figure 5 The Ids in the image are transmitted to the light-emitting device. Figure 5 (LE in the middle).

[0089] Light-emitting device ( Figure 5 The LE in the image can emit light corresponding to the light-emitting pixel driver. Figure 4 The drive current supplied by the EPD in the middle Figure 5 The brightness of light (in Ids).

[0090] As a result, display device 1 can provide the function of displaying images.

[0091] In an optional embodiment, the display device 1 may further include a touch sensor that senses the coordinates of a point touched by a user on the display surface (from which light is emitted for displaying an image).

[0092] The touch sensor can be attached to a surface of the second substrate 20 or disposed between the first substrate 10 and the second substrate 20.

[0093] The second substrate 20 may be used to provide rigidity to protect against external physical and / or electrical shocks. The second substrate 20 may include or be composed of a transparent material having insulating and rigid properties.

[0094] According to an embodiment, the display device 1 may include a sealing layer 30 for bonding the first substrate 10 and the second substrate 20.

[0095] The sealing layer 30 can be disposed between the first substrate 10 and the second substrate 20 in the non-display area. Figure 4 In the NDA).

[0096] The display device 1 may include a filling layer FL that fills the space between the first substrate 10 and the second substrate 20.

[0097] Figure 4 To explain Figure 3 A plan view of the substrate 11 and the circuit layer 12.

[0098] refer to Figure 3 and Figure 4 Display device ( Figure 1 and Figure 2 The substrate 11 of 1) may include a display area DA from which light for displaying an image is emitted, and a non-display area NDA surrounding the display area DA.

[0099] The circuit layer 12 may include a light-emitting pixel driver EPD arranged in the display area DA in the first direction DR1 and the second direction DR2, and lines supplying signals or power to the light-emitting pixel driver EPD.

[0100] The lines of circuit layer 12 may include transmission scan signals ( Figure 5 The scan grid line SGL of SCS and the transmitted data signal (in the text) Figure 5 The VDATA data line DL and the first power supply (in the middle) Figure 5 The first power line VDL in ELVDD).

[0101] The scan grid line SGL can extend in the first direction DR1.

[0102] The data cable DL can extend in the second direction DR2.

[0103] The first power line VDL may extend in either the first direction DR1 or the second direction DR2. In this embodiment, similar to the data line DL, the first power line VDL may extend in the second direction DR2.

[0104] The non-display area NDA may include the display pad area DPA located near the edge of the substrate 11.

[0105] Circuit layer 12 may further include a display pad area DPA disposed in the non-display area NDA and electrically connected to the circuit board. Figure 1 and Figure 2 The signal pad SPD in 32) and the data connection line DLL that electrically connects the signal pad SPD and some parts of the display driver circuit 31.

[0106] The circuit layer 12 may include a gate driver 33 disposed in a portion of the non-display area NDA.

[0107] The gate driver 33 can be electrically connected to the display driver circuit 31 or at least one signal pad SPD via at least one gate control supply line GCSPL.

[0108] The gate driver 33 can output a scan signal to the scan gate line SGL based on the gate control signal and gate level power supplied through at least one gate control supply line GCSPL. Figure 5 SCS in the middle.

[0109] The gate driver 33 may face one side of the display area DA in the first direction DR1. However, this is only one embodiment, and the gate driver 33 may be located in another part of the non-display area NDA, near (adjacent to) the right side of the display area DA. In an alternative embodiment, the gate driver 33 may also be located on opposite sides in the left-right direction of the display area DA.

[0110] Figure 5 To explain Figure 4 The equivalent circuit diagram of the light-emitting pixel driver EPD.

[0111] refer to Figure 5 The light-emitting pixel driver EPD can be electrically connected between the first power supply ELVDD and the light-emitting device LE, and the light-emitting device LE can be electrically connected between the light-emitting pixel driver EPD and the second power supply ELVSS.

[0112] The light-emitting device LE may be an organic light-emitting diode (“LED”) including an organic light-emitting layer, a quantum dot LED including a quantum dot light-emitting layer, a micron LED, or an inorganic LED including inorganic semiconductors.

[0113] The second power supply ELVSS may have a lower voltage level than the first power supply ELVDD.

[0114] That is, the anode electrode of the light-emitting device LE can be electrically connected to the light-emitting pixel driver EPD, and the cathode electrode of the light-emitting device LE can be electrically connected to the second power supply ELVSS.

[0115] Circuit layer ( Figure 3 12) may include a scan gate line SGL for transmitting scan signals SCS to the light-emitting pixel driver EPD; an initialization gate line IGL for transmitting initialization control signals ICS to the light-emitting pixel driver EPD; a data line DL for transmitting data signals VDATA to the light-emitting pixel driver EPD; an initialization voltage line VIL for transmitting initialization voltage VINT to the light-emitting pixel driver EPD; and a first power supply line VDL for transmitting the first power supply ELVDD to the light-emitting pixel driver EPD.

[0116] The light-emitting pixel driver EPD may include a first transistor T1 that generates a drive current Ids for the light-emitting device LE; and one or more transistors T2 and T3 electrically connected to the first transistor T1 and one or more capacitors PC.

[0117] The first transistor T1 can be electrically connected between the first power line VDL and the light-emitting device LE.

[0118] The gate electrode of the first transistor T1 can be electrically connected to the second transistor T2 through the first node N1.

[0119] The first electrode of the first transistor T1 can be electrically connected to the first power supply line VDL.

[0120] The second electrode of the first transistor T1 can be electrically connected to the anode electrode of the light-emitting device LE through the second node N2.

[0121] The second transistor T2 can be electrically connected between the data line DL and the first node N1.

[0122] The gate electrode of the second transistor T2 can be electrically connected to the scan gate line SGL. That is, the second transistor T2 can be turned on by the scan signal SCS of the scan gate line SGL.

[0123] When the second transistor T2 is turned on, the data signal VDATA of the data line DL can be transmitted to the gate electrode of the first transistor T1 through the first node N1.

[0124] Accordingly, the voltage difference between the gate electrode and the first electrode of the first transistor T1, i.e., the voltage difference between the gate and the source, can correspond to the voltage difference between the first power supply ELVDD and the data signal VDATA, and can be greater than the threshold voltage of the first transistor T1. Accordingly, when the first transistor T1 is turned on, a source-drain current Ids (also called drive current Ids) with a magnitude corresponding to the data signal VDATA can be generated between the first and second electrodes of the first transistor T1. Furthermore, the source-drain current Ids of the first transistor T1 can be supplied as drive current Ids to the light-emitting device LE through the second node N2.

[0125] Therefore, since a driving current Ids corresponding to the magnitude of the data signal VDATA is supplied to the light-emitting device LE, the light-emitting device LE can emit light with a brightness corresponding to the data signal VDATA.

[0126] The capacitor PC can be electrically connected between the first node N1 and the second node N2.

[0127] The capacitor PC can be charged based on the data signal VDATA transmitted to the first node N1.

[0128] Because capacitor PC is electrically connected to the gate electrode of first transistor T1 through first node N1, the conducting state of first transistor T1 can be maintained for a period of time corresponding to the charging voltage of capacitor PC.

[0129] The third transistor T3 can be electrically connected between the initialization voltage line VIL and the second node N2.

[0130] The gate electrode of the third transistor T3 can be electrically connected to the initialization gate line IGL. That is, the third transistor T3 can be turned on by the initialization control signal ICS of the initialization gate line IGL.

[0131] When the third transistor T3 is turned on, the potential of the second node N2, that is, the potential of the anode electrode of the light-emitting device LE, can be initialized to the initial voltage VINT of the initial voltage line VIL.

[0132] Figure 5 The diagram illustrates a light-emitting pixel driver (EPD) with a three-transistor-one-capacitor ("3T1C") structure, including a first transistor T1, a second transistor T2, a third transistor T3, and a capacitor PC. However, this is only one embodiment. That is, the light-emitting pixel driver (EPD) in this embodiment is not limited to... Figure 5 The 3T1C structure explained in the text can be used in conjunction with desired configurations. Figure 5 Different structural modifications are described in the text. In one embodiment, the light-emitting pixel driver EPD may not include the third transistor T3. In another embodiment, the light-emitting pixel driver EPD may further include a thin-film transistor for initializing the potential of the first node N1.

[0133] In addition, such as Figure 5 As illustrated herein, each of the first, second, and third transistors T1, T2, and T3 may be an N-type metal-oxide-semiconductor field-effect transistor (“MOSFET”). However, this is only one embodiment, and at least one of the first, second, and third transistors T1, T2, and T3 may also be a P-type MOSFET.

[0134] Figure 6 To explain Figure 2 Plan view of part B.

[0135] refer to Figure 6 The display device in the implementation method ( Figure 2 1) of the substrate ( Figure 3 The display area of ​​11) in the middle ( Figure 4 The DA in the diagram may include light-emitting regions EA arranged parallel to each other and non-light-emitting regions serving as the intervals between the light-emitting regions EA. Figure 7 (NEA in the text).

[0136] Component layer ( Figure 3 13) may include light-emitting devices, each disposed in the light-emitting area EA. Figure 5 (LE in the middle).

[0137] The light-emitting region EA can have a rhomboid planar shape or a rectangular planar shape. However, this is only one embodiment, and the planar shape of the light-emitting region EA in the embodiment is not limited to this. Figure 6 The shape described in the text. That is, the light-emitting area EA can have other polygonal planar shapes (such as square planar shapes, pentagonal planar shapes, or hexagonal planar shapes), or circular planar shapes or elliptical planar shapes including curved edges.

[0138] In an embodiment, the light-emitting region EA may include a first light-emitting region EA1 that emits light in a first wavelength band; a second light-emitting region EA2 that emits light in a second wavelength band below the first wavelength band; and a third light-emitting region EA3 that emits light in a third wavelength band below the second wavelength band.

[0139] In one embodiment, the first wavelength band is from about 600 nanometers (nm) to about 750 nm, and the light in the first wavelength band may be red light. The second wavelength band is from about 480 nm to about 560 nm, and the light in the second wavelength band may be green light. The third wavelength band is from about 370 nm to about 460 nm, and the light in the third wavelength band may be blue light.

[0140] The first light-emitting area EA1 and the third light-emitting area EA3 can be alternately set in the first direction DR1.

[0141] The second luminescent region EA2 can be arranged parallel to each other in either the first direction DR1 or the second direction DR2.

[0142] The second luminous region EA2 can be close to (adjacent to) the first luminous region EA1 and the third luminous region EA3 in the fourth direction DR4 and the fifth direction DR5. The fourth direction DR4 and the fifth direction DR5 are diagonal directions that intersect with the first direction DR1 and the second direction DR2.

[0143] The pixels PX that display the corresponding brightness and color can be provided by the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 that are close to each other in the light-emitting area EA.

[0144] A pixel (PX) can be a basic unit for displaying various colors, including white, at a predetermined brightness.

[0145] Each of the pixels PX may include at least one first light-emitting region EA1, at least two second light-emitting regions EA2, and at least one third light-emitting region EA3 that are close to each other. Accordingly, each of the pixels PX can display a variety of colors by mixing the light emitted from the first, second, and third light-emitting regions EA1, EA2, and EA3 that are close to each other.

[0146] Figure 7A cross-sectional view illustrating an embodiment of the light-emitting pixel driver EPD and the light-emitting device LE. Figure 8 To explain Figure 7 A magnified view of part C.

[0147] refer to Figure 7 The display device in the implementation method ( Figure 1 and Figure 2 The first substrate 10 in 1) includes a substrate 11, a circuit layer 12 disposed on the substrate 11, and a component layer 13 disposed on the circuit layer 12.

[0148] Display device Figure 1 and Figure 2 The first substrate 10 in 1) may further include a sealing layer 14 disposed on the element layer 13.

[0149] The substrate 11 may include a display area ( Figure 4 The display area DA includes luminescent areas EA arranged parallel to each other and non-luminescent areas NEA disposed between the luminescent areas EA.

[0150] The circuit layer 12 may include a buffer layer 121 disposed on the substrate 11, a semiconductor layer (including a channel portion CH, a first electrode portion E1, and a second electrode portion E2) disposed on the buffer layer 121, a gate insulating layer 122 covering the semiconductor layer, a gate conductive layer (including a gate electrode GE) disposed on the gate insulating layer 122, an interlayer insulating layer 123 covering the gate conductive layer, a source / drain conductive layer (including a first connection electrode CNE1 and a second connection electrode CNE2) disposed on the interlayer insulating layer 123, and a planarization layer 124 covering the source / drain conductive layer.

[0151] Each of the buffer layer 121 and the gate insulating layer 122 may include an inorganic insulating material.

[0152] Each of the interlayer insulation layer 123 and the planarization layer 124 may include an inorganic insulating material or an organic insulating material.

[0153] The circuit layer 12 may include light-emitting pixel drivers EPDs, each corresponding to a light-emitting region EA.

[0154] Each of the light-emitting pixel drivers (EPD) may include a drive current for generating the light-emitting device (LE). Figure 5 The first transistor T1 in Ids).

[0155] The first transistor T1 may include a channel portion CH, a first electrode portion E1 and a second electrode portion E2 disposed in a semiconductor layer on a buffer layer 121, and a gate electrode GE disposed in a gate conductive layer on a gate insulating layer 122.

[0156] The first electrode portion E1 can be connected to one side of the channel portion CH.

[0157] The second electrode portion E2 can be connected to the opposite side of the channel portion CH.

[0158] The gate electrode GE can overlap with the channel portion CH.

[0159] The first connection electrode CNE1 can be electrically connected to the first electrode portion E1 of the first transistor T1. In an embodiment, the first electrode portion E1 of the first transistor T1 can be electrically connected to the first power supply line (CNE1) via the first connection electrode CNE1. Figure 5 VDL in (the context of VDL).

[0160] The second connecting electrode CNE2 can be electrically connected to the second electrode portion E2 of the first transistor T1 through the first connecting hole CH1.

[0161] The component layer 13 may include a light-emitting device LE disposed in the light-emitting area EA.

[0162] Each of the light-emitting devices LE may include a first electrode 131 and a second electrode 134 opposite to each other, and a light-emitting layer 133 disposed between the first electrode 131 and the second electrode 134.

[0163] In an embodiment, each of the light-emitting devices LE may further include a first common layer 135 disposed between the first electrode 131 and the light-emitting layer 133, and a second common layer 136 disposed between the light-emitting layer 133 and the second electrode 134.

[0164] That is, the element layer 13 may include a first electrode 131 disposed in a light-emitting region EA; a pixel defining layer 132 disposed in a non-light-emitting region NEA between the light-emitting regions EA and covering the edge of the first electrode 131; a first common layer 135 disposed on the first electrode 131; a light-emitting layer 133 disposed on the first common layer 135; a second common layer 136 disposed on the pixel defining layer 132 and the light-emitting layer 133; and a second electrode 134 disposed on the second common layer 136.

[0165] The first electrode 131 can be electrically connected to the light-emitting pixel driver EPD of the circuit layer 12, and the light-emitting pixel driver EPD can be electrically connected to the transmission of the first power supply ( Figure 5 The first power line of ELVDD in the middle ( Figure 5 VDL in (the context of VDL).

[0166] A second power supply having a voltage level lower than that of the first power supply ELVDD. Figure 5 The ELVSS can be applied to the second electrode 134.

[0167] In this case, the first common layer 135 may include a hole transport layer disposed below the light-emitting layer 133 and comprising a hole transport material. In an alternative embodiment, the first common layer 135 may further include a hole injection layer disposed between the hole transport layer and the first electrode 131 and comprising a hole injection material.

[0168] The second common layer 136 may include an electron transport layer disposed on the light-emitting layer 133 and including an electron transport material. Figure 8 (1361 in the text). In an optional embodiment, the second common layer 136 may further include an electron injection layer disposed between the electron transport layer 1361 and the second electrode 134 and including an electron injection material. Figure 8 (1362 in the middle).

[0169] The first electrode 131 can be disposed on the planarization layer 124 of the circuit layer 12 and can overlap with the light-emitting region EA.

[0170] The first electrode 131 can be electrically connected to the second connection electrode CNE2 through the second connection hole CH2. As a result, the first electrode 131 can be electrically connected to the first transistor T1 of the light-emitting pixel driver EPD. This first electrode 131 can be a pixel electrode or an anode electrode.

[0171] The first electrode 131 may include a reflective layer comprising a reflective metallic material and a barrier layer for preventing the diffusion of the reflective metallic material of the reflective layer. The reflective layer may include silver (Ag) or an alloy comprising silver (Ag), or may be composed of silver (Ag). The barrier layer may include a transparent conductive oxide (e.g., indium tin oxide (“ITO”)).

[0172] In an embodiment, the first electrode 131 may include a three-layer structure of ITO / Ag / ITO.

[0173] The pixel defining layer 132 may be disposed on the planarization layer 124 of the circuit layer 12, overlap with the non-light-emitting region NEA, and cover the edge of the first electrode 131.

[0174] The pixel-defining layer 132 may include an organic insulating material.

[0175] The light-emitting layer 133 may include organic light-emitting materials and may be disposed in the light-emitting region EA.

[0176] The second electrode 134 can be completely disposed in the display area including the light-emitting area EA and the non-light-emitting area NEA. Figure 4 In the DA), this second electrode 134 can be a common electrode or a cathode electrode.

[0177] like Figure 8As explained herein, in an embodiment, the second electrode 134 may include a main layer 1341 disposed on the light-emitting layer 133 and comprising a pure metallic material; and an anchoring layer 1342 disposed on the main layer 1341. In the description, for example, the term "pure metallic material" may refer to a metallic material composed entirely of one type of metal atoms.

[0178] The main layer 1341 can be configured as a thin film with a thickness of about 5 nm to about 30 nm.

[0179] The pure metallic material forming the main layer 1341 may include pure silver.

[0180] The main layer 1341 can be configured to have a thickness of about 5 nanometers (nm) to about 30 nm. In an embodiment, the main layer 1341 can be configured to have a thickness of about 10 nm.

[0181] When the thickness of the main layer 1341 is less than 5 nm, the main layer 1341 may have difficulty maintaining a thin film form.

[0182] In addition, when the thickness of the main layer 1341 exceeds 30nm, it may be difficult to improve the light transmittance.

[0183] Anchoring layer 1342 may be disposed on main layer 1341 with a thickness less than that of main layer 1341. Anchoring layer 1342 is intended to prevent the agglomeration and diffusion of pure metallic material in main layer 1341.

[0184] For this purpose, anchoring layer 1342 may include a metallic material having an atomic weight greater than that of the pure metallic material of main layer 1341 and / or an atomic radius greater than that of the pure metallic material.

[0185] In an embodiment, when the pure metal material of the main layer 1341 is pure silver, the anchoring layer 1342 may include: oxides including indium (In), oxides including tin (Sn), oxides including zinc (Zn), and / or oxides including tungsten (W).

[0186] That is, the anchoring layer 1342 may include at least one of tungsten oxide, indium tin oxide (“ITO”), and indium zinc oxide (“IZO”).

[0187] In an optional embodiment, when the pure metal material of the main layer 1341 is pure silver, the anchoring layer 1342 may include at least one of ytterbium (Yb), bismuth (Bi), cesium (Cs), samarium (Sm), and barium (Ba). In this embodiment, the anchoring layer 1342 may include ytterbium (Yb).

[0188] The anchoring layer 1342 may be configured to have a thickness of approximately 0.5 nm to approximately 3 nm. In an embodiment, the thickness of the anchoring layer 1342 may be approximately 1 nm.

[0189] When the thickness of the anchoring layer 1342 is less than 0.5 nm, the anchoring layer 1342 may be difficult to set in thin film form or difficult to maintain in thin film form.

[0190] When the thickness of the anchoring layer 1342 exceeds 3 nm, the transmittance of the second electrode 134 can be significantly reduced by the anchoring layer 1342 beyond the critical level.

[0191] Additionally, the electron injection layer 1362 disposed between the electron transport layer 1361 and the second electrode 134 in the second common layer 136 may include ytterbium (Yb).

[0192] In this way, since the pure metal material of the main layer 1341 is sandwiched between the ytterbium (Yb) of the anchoring layer 1342 and the ytterbium (Yb) of the electron injection layer 1362, the aggregation and diffusion of the pure metal material of the main layer 1341 can be further blocked, thereby making it easier to maintain the thin film form of the main layer 1341.

[0193] Furthermore, since the main layer 1341 is stacked on the electron injection layer 1362 including ytterbium (Yb), it is more advantageous for the main layer 1341 to be arranged in the form of a thin film with a relatively uniform thickness.

[0194] like Figure 7 As explained in the description, in the embodiment, the first substrate 10 of the display device 1 may further include an electrode protection layer CPL covering the second electrode 134 of the element layer 13.

[0195] The electrode protective layer CPL is designed to protect the second electrode 134 in thin film form from physical and / or electrical shocks.

[0196] The electrode protective layer CPL may include inorganic insulating materials or organic insulating materials.

[0197] The electrode protective layer CPL can be set on the anchoring layer 1342.

[0198] In other words, the anchoring layer 1342 can be disposed between the main layer 1341 and the electrode protection layer CPL.

[0199] Accordingly, the amount and range of diffusion of the pure metal material of the main layer 1341 into the electrode protective layer CPL can be reduced by the anchoring layer 1342.

[0200] The sealing layer 14 is designed to prevent oxygen or moisture from penetrating into the component layer 13 and to mitigate electrical and / or physical shocks to the circuit layer 12 and the component layer 13.

[0201] The sealing layer 14 may include a first sealing layer 141 disposed on the element layer 13 and comprising an inorganic insulating material; a second sealing layer 142 disposed on the first sealing layer 141, overlapping the display area DA, and comprising an organic insulating material; and a third sealing layer 143 covering the second sealing layer 142 and comprising an inorganic insulating material.

[0202] As described above, in the embodiment, the second electrode 134 includes a main layer 1341 disposed on the light-emitting layer 133 and an anchoring layer 1342 covering the main layer 1341.

[0203] Since the main layer 1341 comprises or is composed of a pure metal material such as pure silver, the main layer 1341 can be deposited in the form of a thin film using a vacuum thermal deposition method.

[0204] Accordingly, damage to the light-emitting layer 133 and the second common layer 136 caused by the process of setting the main layer 1341 can be prevented.

[0205] In addition, when the anchoring layer 1342 includes at least one of ytterbium (Yb), bismuth (Bi), cesium (Cs), samarium (Sm) and barium (Ba), the anchoring layer 1342 can be formed by vacuum thermal deposition, and thus, damage to the light-emitting layer 133 and the second common layer 136 caused by the process of forming the anchoring layer 1342 can be prevented.

[0206] Therefore, it can improve the reliability, uniformity of characteristics, and lifespan of the light-emitting device (LE).

[0207] In this embodiment, since the second electrode 134 includes a main layer 1341 comprising or composed of pure metal material and an anchoring layer 1342 for preventing diffusion and agglomeration of the pure metal material, the second electrode 134 does not require impurities for maintaining film stability.

[0208] That is, because the second electrode 134 of the light-emitting device LE in the embodiment does not contain impurities (such as magnesium (Mg)) for thin film stability, the decrease in light transmittance and the increase in resistance of the second electrode 134 due to impurities can be prevented. Therefore, the luminous efficiency and photoelectric conversion efficiency of the light-emitting device LE can be improved.

[0209] In other words, as a result of the simulation results for checking the resistance and transmittance of the second electrode 134, it was confirmed that in the comparative example in which the second electrode 134 comprises a silver-magnesium alloy (AgMg) doped with 5 wt% magnesium (Mg) impurities and is set with a thickness of 10.5 nm, the resistance of the second electrode 134 is 10.2 ohms per square (Ω / □) and the transmittance of the second electrode 134 is 63.7%.

[0210] In an embodiment where the second electrode 134 includes a main layer 1341 made of pure silver material with a thickness of 10 nm and an anchoring layer 1342 made of ytterbium (Yb) with a thickness of 1 nm, the resistance of the second electrode 134 was confirmed to be 6.5 Ω / □, which is 36.3% lower than that of the comparative example, and the light transmittance of the second electrode 134 was 70.6%, which is 10.8% higher than that of the comparative example.

[0211] Figure 9 Simulation diagram illustrating the distribution of silver atoms in the second common layer 136, the second electrode 134, and the electrode protective layer CPL before heat treatment in the embodiments and comparative examples. Figure 10 Simulation diagram illustrating the distribution of silver atoms in the second common layer 136, the second electrode 134, and the electrode protective layer CPL after heat treatment in the embodiments and comparative examples.

[0212] exist Figure 9 and Figure 10 In the comparative example, the second electrode 134 comprises a silver-magnesium alloy (AgMg) doped with 5 wt% magnesium (Mg) impurities and is configured to have a thickness of 10.5 nm. Figure 9 and Figure 10 The “count” in the figure represents the simulated number of silver atoms detected at a specific point in each thickness.

[0213] like Figure 9 As illustrated in the description, it is confirmed that, compared to the comparative example, in the embodiment, the extent to which silver atoms diffuse into the second common layer 136 and the electrode protective layer CPL surrounding the second electrode 134 is narrow prior to heat treatment.

[0214] In addition, such as Figure 10 As explained, the diffusion range of silver atoms due to heat treatment in the embodiment is narrower compared to the comparative example. That is, it can be seen that because the silver atoms of the main layer 1341 are fixed by the anchoring layer 1342, the second electrode 134 in the embodiment has a lower thermal reactivity compared to the thermal reactivity of the comparative example.

[0215] Therefore, the light-emitting device in the implementation method can be improved. Figure 7 The characteristics of LE (in the context of LE) include uniformity, reliability, and lifespan.

[0216] The display device in the embodiments of this disclosure can be applied to various electronic devices. Electronic devices according to embodiments of this disclosure include the aforementioned display device, and may further include modules or devices with additional functions in addition to the display device.

[0217] Figure 11 This is a block diagram illustrating an embodiment of the electronic device 10 according to the present disclosure.

[0218] refer to Figure 11 The electronic device 10 in the embodiments of this disclosure may include a display module 21, a processor 22, a memory 23, and a power module 24.

[0219] The processor 22 may include at least one of a central processing unit (“CPU”), an application processor (“AP”), a graphics processing unit (“GPU”), a communication processor (“CP”), an image signal processor (“ISP”), and a controller.

[0220] The memory 23 can store data information desired for the operation of the processor 22 or the display module 21. When the processor 22 executes the application program stored in the memory 23, image data signals and / or input control signals are transmitted to the display module 21, and the display module 21 can process the received signals and output image information through the display screen.

[0221] The power module 24 may include a power supply module (e.g., a power adapter or battery) and a power conversion module that converts the power supplied by the power supply module to generate the power desired for the operation of the electronic device 10.

[0222] At least one of the components of the electronic device 10 according to embodiments of the present disclosure may include a display device according to embodiments of the present disclosure. Figure 1 and Figure 2 In 1), some of the modules that are functionally included in a module may be included in the display device 1, while other modules may be provided separately from the display device 1. In an embodiment, for example, the display device 1 may include a display module 21, and the processor 22, memory 23, and power module 24 may be provided in the form of other devices in the electronic device 10 besides the display device 1.

[0223] Figure 12 This is a schematic diagram illustrating various embodiments of the electronic device according to the present disclosure.

[0224] refer to Figure 12 The display device in the embodiments of this disclosure is applied. Figure 1 and Figure 2The various electronic devices in 1) may include not only image display electronic devices (e.g., smartphones 10_1a, tablet PCs 10_1b, laptops 10_1c, televisions (“TV”) 10_1d and desktop monitors 10_1e), but also wearable electronic devices that include display modules (e.g., smart glasses 10_2a, head-mounted displays 10_2b and smartwatches 10_2c) and vehicle electronic devices 10_3 that include display modules (e.g., central information displays (“CID”) and interior mirror displays arranged on the dashboard, center console and instrument panel of a vehicle).

[0225] However, the effects of this disclosure are not limited to those stated herein. The above and other effects of this disclosure will become more apparent to those skilled in the art upon reference to the claims.

Claims

1. A light-emitting device, comprising: First electrode; A light-emitting layer disposed on the first electrode; as well as A second electrode disposed on the light-emitting layer, the second electrode comprising: The light-emitting layer is disposed on the main layer and includes a pure metal material; as well as An anchoring layer is set on the main layer.

2. The light-emitting device according to claim 1, wherein the main layer has a thickness of 5 nanometers to 30 nanometers. The pure metal material includes pure silver, and The anchoring layer has a thickness less than that of the main layer.

3. The light-emitting device according to claim 2, wherein the anchoring layer comprises a metallic material having an atomic mass greater than that of the pure metallic material and / or an atomic radius greater than that of the pure metallic material.

4. The light-emitting device according to claim 3, wherein the anchoring layer comprises at least one selected from ytterbium, bismuth, cesium, samarium, and barium.

5. The light-emitting device according to claim 4, wherein the anchoring layer comprises at least one of tungsten oxide, indium tin oxide, and indium zinc oxide.

6. The light-emitting device according to claim 4, wherein the thickness of the anchoring layer is 0.5 nanometers to 3 nanometers.

7. The light-emitting device according to claim 2, wherein the first electrode reflects light from the light-emitting layer. The light-emitting layer is disposed on the first electrode. The second electrode is disposed on the light-emitting layer. The light from the light-emitting layer is emitted through the second electrode. The second electrode is covered with an electrode protective layer, and The anchoring layer is disposed between the main layer and the electrode protection layer.

8. The light-emitting device according to claim 7, further comprising: A first common layer disposed between the first electrode and the light-emitting layer; as well as A second common layer is disposed between the light-emitting layer and the second electrode. The second common layer includes: An electron transport layer disposed on the light-emitting layer; as well as An electron injection layer is disposed between the electron transport layer and the second electrode, and The electron injection layer includes ytterbium.

9. A display device, comprising: The substrate including the display area in which the light-emitting area is arranged; Circuit layer disposed on the substrate; as well as A component layer disposed on the circuit layer, the component layer comprising: The light-emitting device according to any one of claims 1 to 8 is disposed in the light-emitting area.

10. An electronic device comprising: The display device according to claim 9 for displaying images; Memory that stores applications; The application program is executed and image data signals and / or input control signals are transmitted to the processor of the display device. as well as A power supply module that supplies power to the display device.

Images