Test structure and test method

Abstract

The invention discloses a test structure and a test method, and the structure comprises a substrate which comprises a detection region, a first lead region located at one side of the detection region, and a second lead region located at the other side of the detection region; the first metal wire is located in the substrate of the first lead area; the second metal wire is located in the substrate of the second lead area; the detection metal layer is located in the substrate of the detection area, the detection metal layer is electrically isolated from the first metal wire, and the detection metal layer is electrically connected with the second metal wire; and the resistance layer is positioned above the substrate of the detection area, extends to the upper part of the substrate of the first lead area and is electrically connected with the first metal wire, and further extends to the upper part of the substrate of the second lead area and is electrically connected with the second metal wire. According to the invention, a rapid and convenient test method can be realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a test structure and test method. Background Technology

[0002] As more features are packaged into individual semiconductor chips, there is a growing need to integrate passive components such as resistors into circuits. Some resistors can be formed via ion implantation and diffusion, such as polycrystalline silicon resistors. However, such resistors typically exhibit high resistance variations and can also have resistance values ​​that change significantly as a function of temperature. A new method for constructing integrated resistors (called thin-film resistors (TFRs)) has been introduced into industry to improve the performance of integrated resistors. Known TFRs are typically formed from materials such as SiCr (silicon-chromium), SiCCr (silicon-silicon carbide-chromium), TaN (tantalum nitride), NiCr (nickel-chromium), AlNiCr (aluminum-doped nickel-chromium), or TiNiCr (titanium-nickel-chromium). Summary of the Invention

[0003] The problem solved by the embodiments of the present invention is to provide a test structure and test method that facilitates the implementation of a fast and convenient test method.

[0004] To address the aforementioned problems, embodiments of the present invention provide a test structure comprising: a substrate, including a detection region, a first lead region located on one side of the detection region, and a second lead region located on the other side of the detection region; a first metal wire located in the substrate of the first lead region; a second metal wire located in the substrate of the second lead region; a detection metal layer located in the substrate of the detection region, the detection metal layer being electrically isolated from the first metal wire and electrically connected to the second metal wire; and a resistive layer located above the substrate of the detection region, the resistive layer extending above the substrate of the first lead region and electrically connected to the first metal wire, and the resistive layer further extending above the substrate of the second lead region and electrically connected to the second metal wire.

[0005] Optionally, the detection metal layer is formed by sequentially connecting multiple metal lines that extend along a first direction and are arranged in parallel along a second direction, forming a serpentine shape. The second direction is the direction from the first lead area to the second lead area, and the first direction is perpendicular to the second direction.

[0006] Optionally, the ratio of the total length to the width of the detected metal layer is greater than or equal to 714.

[0007] Optionally, the longitudinal spacing between the detection metal layer and the resistive layer is 0.2 μm to 0.3 μm.

[0008] Optionally, the test structure further includes: a first interconnect via structure located between the first metal line and the resistive layer, wherein the first metal line and the resistive layer are electrically connected through the first interconnect via structure; and a second interconnect via structure located between the second metal line and the resistive layer, wherein the second metal line and the resistive layer are electrically connected through the second interconnect via structure.

[0009] Optionally, one end of the first metal wire is electrically connected to the resistive layer, and the other end includes a first signal loading end and a first signal testing end; one end of the second metal wire is electrically connected to the resistive layer, and the other end includes a second signal loading end and a second signal testing end; one end of the detection metal layer is electrically connected to the second metal wire, and the other end includes a third signal loading end and a third signal testing end.

[0010] Optionally, the material of the first metal wire includes copper or aluminum; the material of the second metal wire includes copper or aluminum; and the material of the detection metal layer includes copper or aluminum.

[0011] Accordingly, embodiments of the present invention also provide a testing method, comprising: providing a testing structure according to embodiments of the present invention; performing a first-path test, wherein the first-path is composed of a first metal wire, a resistive layer, a second metal wire, and a detection metal layer connected in series; performing a second-path test, wherein the second-path is composed of a first metal wire, a resistive layer, a second metal wire, and a detection metal layer connected in series, wherein the current in the second-path is greater than the current in the first-path; obtaining the temperature difference of the detection metal layer under the second-path conditions and the first-path conditions; and obtaining the temperature resistivity of the resistive layer based on the temperature difference of the detection metal layer.

[0012] Optionally, a first-path test is performed, including: acquiring a first temperature of the detection metal layer under the first-path condition; a second-path test is performed, including: acquiring a second temperature of the detection metal layer under the second-path condition; and acquiring the temperature difference between the detection metal layer under the second-path condition and the first-path condition, including: acquiring the difference between the second temperature and the first temperature as the temperature difference.

[0013] Optionally, before performing the first path test and the second path test, the method further includes: obtaining the initial detection resistance of the detection metal layer under room temperature conditions; obtaining the first temperature of the detection metal layer under the first path conditions, including: obtaining the first detection resistance of the detection metal layer under the first path conditions; calculating the first temperature based on the initial detection resistance and the first detection resistance; obtaining the second temperature of the detection metal layer under the second path conditions, including: obtaining the second detection resistance of the detection metal layer under the second path conditions; calculating the second temperature based on the initial detection resistance and the second detection resistance.

[0014] Optionally, use an expression. The first temperature is calculated based on the initial sensing resistance and the first sensing resistance, where R S0 R is the initial sensing resistor. S1The first sensing resistor is TCR0, which is the temperature resistivity of the sensing metal layer at room temperature. T0 represents room temperature. S1 The first temperature; using the expression The second temperature is calculated based on the initial sensing resistance and the second sensing resistance, where R S0 R is the initial sensing resistor. S2 The second sensing resistor is TCR0, which is the temperature resistivity of the sensing metal layer at room temperature, and T0 is the room temperature. S2 For the second temperature; using the expression The difference between the second temperature and the first temperature is obtained as the temperature difference.

[0015] Optionally, a first-path test is performed by applying a first current to the first path; obtaining a first detection resistance of the detection metal layer under the first-path condition includes: obtaining a first detection voltage difference across the detection metal layer; calculating the first detection resistance based on the first detection voltage difference and the first current; a second-path test is performed by applying a second current to the second path; obtaining a second detection resistance of the detection metal layer under the second-path condition includes: obtaining a second detection voltage difference across the detection metal layer; calculating the second detection resistance based on the second detection voltage difference and the second current.

[0016] Optionally, use expression R. S1 =(V S21 -V S31 The first detection resistance is calculated based on the first detection voltage difference and the first current, where V... S21 To detect the voltage on one side of the metal layer, V S31 To detect the voltage on the other side of the metal layer, I1 is the first current, R S1 The first sensing resistor is used; the expression R is employed. S2 =(V S22 -V S22 The second detection resistance is calculated based on the second detection voltage difference and the second current, where V... S22 To detect the voltage on one side of the metal layer, V S32 To detect the voltage on the other side of the metal layer, I2 is the second current, R S2 This is the second detection resistor.

[0017] Optionally, obtaining the initial detection resistance of the detection metal layer under room temperature conditions includes: performing an initial path test at room temperature, wherein the initial path is composed of a second metal line and the detection metal layer connected in series; and obtaining the initial detection resistance of the detection metal layer based on the initial path test.

[0018] Optionally, an initial path test is performed by applying an initial current to the initial path; the initial detection resistance of the detection metal layer is obtained based on the initial path test, including: obtaining the initial voltage difference across the detection metal layer; and calculating the initial detection resistance based on the initial voltage difference and the initial current.

[0019] Optionally, performing a first-path test further includes: obtaining a first resistance of the resistive layer under the first-path condition; performing a second-path test further includes: obtaining a second resistance of the resistive layer under the second-path condition; obtaining the temperature resistivity of the resistive layer based on the temperature difference of the detected metal layer includes: calculating the temperature resistivity based on the first resistance, the second resistance, and the temperature difference.

[0020] Optionally, use an expression. The temperature resistivity is calculated based on the first resistance, the second resistance, and the temperature difference, where R1 is the first resistance, R2 is the second resistance, and ΔT is the temperature difference. S TCR is the temperature difference, and TCR is the temperature resistivity.

[0021] Optionally, obtaining the first resistance of the resistive layer under the first path condition includes: obtaining the first resistance voltage difference across the resistive layer; calculating the first resistance based on the first resistance voltage difference and the first current; obtaining the second resistance of the resistive layer under the second path condition includes: obtaining the second resistance voltage difference across the resistive layer; calculating the second resistance based on the second resistance voltage difference and the second current.

[0022] Optionally, the expression R1 = (V S11 -V S21 The first resistance is calculated based on the voltage difference and the first current; the expression R2 = (V S12 -V S22 The second resistor is calculated based on the voltage difference between the second resistor and the second current.

[0023] Optionally, in the step of providing the test structure, one end of the first metal wire is electrically connected to the resistive layer, and the other end includes a first signal loading terminal and a first signal testing terminal; one end of the second metal wire is electrically connected to the resistive layer, and the other end includes a second signal loading terminal and a second signal testing terminal; one end of the detection metal layer is electrically connected to the second metal wire, and the other end includes a third signal loading terminal and a third signal testing terminal; in the first path test and the second path test, a first current is applied to the first path and a second current is applied to the second path through the first signal loading terminal and the third signal loading terminal; a first detection voltage difference and a second detection voltage difference are obtained across the detection metal layer through the second signal testing terminal and the third signal testing terminal; a first resistance voltage difference and a second resistance voltage difference are obtained across the resistive layer through the first signal testing terminal and the second signal testing terminal; in the initial path test, an initial current is applied to the initial path through the second signal loading terminal and the third signal loading terminal; an initial voltage difference is obtained across the detection metal layer through the second signal testing terminal and the third signal testing terminal.

[0024] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0025] In the test structure provided by this embodiment of the invention, the detection metal layer is located in the substrate of the detection area. The detection metal layer is electrically isolated from the first metal line and electrically connected to the second metal line. The resistive layer is located above the substrate of the detection area, extending above the substrate of the first lead area and electrically connected to the first metal line. The resistive layer also extends above the substrate of the second lead area and is electrically connected to the second metal line. In this embodiment of the invention, the detection metal layer is electrically connected to the second metal line, and the second metal line is electrically connected to the resistive layer. Thus, the resistive layer is connected in series with the detection metal layer located directly below it. During the testing process of the test structure, the self-heating effect of the resistive layer under different currents is used to transfer the temperature to the detection metal layer directly below it. Using the detection metal layer as a temperature sensor, the temperature coefficient of resistance (TCR) of the resistive layer can be calculated by detecting the temperature change of the metal layer. Compared with the scheme of calculating the temperature coefficient of resistance by heating the resistive layer, this scheme does not require a lengthy heating process, saves testing time, improves testing efficiency, and the calculation of the parameters of the detection metal layer is relatively simple. Therefore, the test structure of this embodiment of the invention is conducive to realizing a fast and convenient testing method.

[0026] The testing method provided in this embodiment of the invention includes a test structure for performing a first-path test. The first path consists of a first metal wire, a resistive layer, a second metal wire, and a detection metal layer connected in series. A second-path test is also performed, consisting of the same components. The current in the second path is greater than that in the first path. The temperature difference between the detection metal layer under the second-path and first-path conditions is obtained, and the temperature resistance coefficient of the resistive layer is calculated based on this temperature difference. In this embodiment, the detection metal layer is electrically connected to the second metal wire, and the second metal wire is electrically connected to the resistive layer. The resistive layer is connected in series with the detection metal layer located directly below it. During the testing of the test structure, the self-heating effect of the resistive layer under different currents transfers temperature to the detection metal layer directly below it. Using the detection metal layer as a temperature sensor, the temperature resistance coefficient of the resistive layer can be calculated by detecting the temperature change (temperature difference) of the metal layer. Compared to methods that calculate the temperature resistivity (TCR) of a resistive layer by heating the resistive layer, this method eliminates the need for a lengthy heating process, saving testing time, improving testing efficiency, and simplifying the calculation of parameters for the tested metal layer. This facilitates a fast and convenient testing method. Attached Figure Description

[0027] Figures 1 to 2 This is a schematic diagram of an embodiment of the test structure of the present invention;

[0028] Figure 3 This is a flowchart of an embodiment of the testing method of the present invention. Detailed Implementation

[0029] The efficiency and convenience of current testing methods need improvement. This paper analyzes the reasons why the efficiency and convenience of current testing methods need to be improved, using one specific testing method as an example.

[0030] Traditional methods for testing the temperature coefficient of resistance (TCR) of thin film resistance (TFR) involve heating the test wafer to different temperatures and waiting for the temperature distribution to become uniform before measuring the resistance. For example, the resistance R_1 is measured at temperature T_1, then the temperature is raised to the next temperature T_2, and the resistance R_2 is measured again. Heating to 50°C takes approximately 0.5 hours, which is quite time-consuming. Furthermore, to ensure uniform temperature across the entire test wafer, it is necessary to hold the temperature for at least 0.5 hours before measuring R_2. Therefore, TCR testing of a single test wafer requires at least one hour. Additionally, the test temperature range is limited by the probe chuck, typically around 150°C. However, the resistance change of thin film with low TCR is not sensitive enough to this temperature range. Therefore, traditional methods for testing the TCR of thin film resistance fail to meet the requirements of both speed and convenience in the production and use of thin film resistors.

[0031] To address the technical problem, embodiments of the present invention provide a test structure, comprising: a substrate including a detection region, a first lead region located on one side of the detection region, and a second lead region located on the other side of the detection region; a first metal wire located in the substrate of the first lead region; a second metal wire located in the substrate of the second lead region; a detection metal layer located in the substrate of the detection region, the detection metal layer being electrically isolated from the first metal wire and electrically connected to the second metal wire; and a resistive layer located above the substrate of the detection region, the resistive layer extending above the substrate of the first lead region and electrically connected to the first metal wire, and the resistive layer also extending above the substrate of the second lead region and electrically connected to the second metal wire.

[0032] In this embodiment of the invention, the detection metal layer is electrically connected to the second metal wire, and the second metal wire is electrically connected to the resistive layer. The resistive layer is then connected in series with the detection metal layer located directly below it. During the testing of the test structure, the self-heating effect of the resistive layer under different currents is used to transfer temperature to the detection metal layer directly below it. Using the detection metal layer as a temperature sensor, the temperature coefficient of resistance (TCR) of the resistive layer can be calculated by detecting the temperature change of the metal layer. Compared to the method of calculating the TCR of the resistive layer by heating it, this method eliminates the need for a lengthy heating process, saving testing time and improving testing efficiency. Furthermore, the calculation of the parameters of the detection metal layer is relatively simple. Therefore, the test structure of this embodiment of the invention facilitates a fast and convenient testing method.

[0033] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0034] Figures 1 to 2 This is a schematic diagram of an embodiment of the test structure of the present invention.

[0035] Reference Figure 1 and Figure 2 , Figure 2 yes Figure 1 The top view of the test structure includes: a substrate (not shown), including a detection area 100a, a first lead area 100b1 located on one side of the detection area 100a, and a second lead area 100b2 located on the other side of the detection area 100a; a first metal wire 100 located in the substrate of the first lead area 100b1; a second metal wire 200 located in the substrate of the second lead area 100b2; a detection metal layer 300 located in the substrate of the detection area 100a, the detection metal layer 300 being electrically isolated from the first metal wire 100 and electrically connected to the second metal wire 200; and a resistive layer 400 located above the substrate of the detection area 100a, the resistive layer 400 extending above the substrate of the first lead area 100b1 and electrically connected to the first metal wire 100, and the resistive layer 400 also extending above the substrate of the second lead area 100b2 and electrically connected to the second metal wire 200.

[0036] The test structure in this embodiment is used to detect the temperature coefficient of resistance (TCR) of the resistive layer. The TCR value measures the change in resistance with temperature, and its magnitude is closely related to the purity and processing performance of the resistive layer material. Generally, the higher the purity of the resistive layer material, the smaller its TCR value, and the better the stability of the resistance value with temperature changes. Therefore, the TCR value can serve as an important indicator for evaluating the quality and processing performance of the resistive layer material.

[0037] The substrate is used to provide a basis for the process operations in forming the test structure.

[0038] In this embodiment, the substrate includes a detection area 100a, a first lead area 100b1 located on one side of the detection area 100a, and a second lead area 100b2 located on the other side of the detection area 100a.

[0039] The detection area 100a is the area used for testing, and the first lead area 100b1 and the second lead area 100b2 are the areas used for loading and detecting electrical signals.

[0040] The first metal line 100 is used as a connection line in the circuit formed by the test structure, and electrical signals are applied and detected through the first metal line 100 during the test.

[0041] In this embodiment, one end of the first metal line 100 is electrically connected to the resistive layer 400, and the other end includes a first signal loading terminal F1 and a first signal testing terminal S1.

[0042] The first signal loading terminal F1 is used to load electrical signals, and the first signal testing terminal S1 is used to detect electrical signals.

[0043] In this embodiment, the first metal line 100 is the rear metal line. The test structure is formed based on the original rear metal line, which does not require additional process costs and is conducive to the formation of the test structure.

[0044] Specifically, in this embodiment, the material of the first metal wire 100 includes copper or aluminum.

[0045] The second metal line 200 is used as a connection line in the circuit formed by the test structure, and electrical signals are applied and detected through the second metal line 200 during the test.

[0046] In this embodiment, one end of the second metal line 200 is electrically connected to the resistive layer 400, and the other end includes a second signal loading terminal F2 and a second signal testing terminal S2.

[0047] The second signal loading terminal F2 is used to load electrical signals, and the second signal testing terminal S2 is used to detect electrical signals.

[0048] In this embodiment, the second metal wire 200 is a rear metal wire. The test structure is formed based on the original rear metal wire, which does not require additional process costs and is conducive to the formation of the test structure.

[0049] Specifically, in this embodiment, the material of the second metal wire 200 includes copper or aluminum.

[0050] The detection metal layer 300 is located directly below the resistive layer 400 and is used as a temperature sensor for the resistive layer 400.

[0051] In this embodiment, the detection metal layer 300 is electrically connected to the second metal line 200, and the second metal line 200 is electrically connected to the resistive layer 400. The resistive layer 400 is connected in series with the detection metal layer 300 located directly below it. During the testing of the test structure, the self-heating effect of the resistive layer 400 under different currents is used to transfer the temperature to the detection metal layer 300 directly below it. The detection metal layer 300 is used as a temperature sensor, and the temperature coefficient of resistance (TCR) of the resistive layer 400 can be calculated by detecting the temperature change of the metal layer 300. Compared with the scheme of calculating the temperature coefficient of resistance by heating the resistive layer, this scheme does not require a lengthy heating process, saves testing time, improves testing efficiency, and the parameter calculation of the detection metal layer 300 is relatively simple. Therefore, the test structure of this embodiment is conducive to realizing a fast and convenient testing method.

[0052] In this embodiment, one end of the detection metal layer 300 is electrically connected to the second metal line 200, and the other end includes a third signal loading terminal F3 and a third signal testing terminal S3.

[0053] The third signal loading terminal F3 is used to load electrical signals, and the third signal testing terminal S3 is used to detect electrical signals.

[0054] In this embodiment, the detection metal layer 300 consists of multiple layers along a first direction (e.g., Figure 2 Extending along the Y direction (as shown in the middle) and along the second direction (as shown in the middle Y direction) Figure 2 Multiple metal wires arranged in parallel (as shown in the X direction) are connected sequentially to form a serpentine shape. The second direction is the direction from the first lead area 100b1 to the second lead area 100b2. The first direction is perpendicular to the second direction.

[0055] The detection metal layer 300 is formed by a series of metal lines that extend along a first direction and are arranged in parallel along a second direction, connected in sequence to form a serpentine shape. This is beneficial to increasing the total length of the detection metal layer 300, thereby increasing the aspect ratio of the detection metal layer 300. This is also beneficial to increasing the resistance of the detection metal layer 300, and thus improving the measurement accuracy of the detection metal layer 300.

[0056] In this embodiment, the ratio of the total length to the width of the detection metal layer 300 is greater than or equal to 714.

[0057] If the ratio of the total length to the width of the detection metal layer 300 is greater than or equal to 714, then the length-to-width ratio through which the current flows in the detection metal layer 300 is large, which is beneficial to increasing the resistance of the detection metal layer 300, and thus improving the measurement accuracy of the detection metal layer 300.

[0058] It should be noted that if the total length of the detection metal layer 300 is greater than or equal to 200μm, making the total length of the detection metal layer 300 relatively large, then the ratio of the total length to the width of the detection metal layer 300 is greater than or equal to 200μm divided by the minimum design width, which is usually 0.28μm. Accordingly, the ratio of the total length to the width of the detection metal layer 300 is greater than or equal to 714.

[0059] It should be noted that in this embodiment, the longitudinal spacing between the detection metal layer 300 and the resistive layer 400 should not be too large or too small. If the longitudinal spacing between the detection metal layer 300 and the resistive layer 400 is too large, it can easily lead to excessive thermal resistance between the resistive layer 400 and the detection metal layer 300. When the resistive layer 400 transfers heat to the detection metal layer 300, it can easily lead to large heat loss, resulting in an excessive temperature difference between the resistive layer 400 and the detection metal layer 300. Consequently, the temperature resistivity coefficient of the resistive layer 400 calculated based on the temperature change of the detection metal layer 300 will have a large error, leading to poor test results. If the longitudinal spacing between the detection metal layer 300 and the resistive layer 400 is too small, it can easily cause difficulties in the formation process of the test structure. Therefore, in this embodiment, the longitudinal spacing between the detection metal layer 300 and the resistive layer 400 is 0.2 μm to 0.3 μm.

[0060] In this embodiment, the material of the detection metal layer 300 includes copper or aluminum.

[0061] Copper or aluminum materials have a large temperature resistivity, and the resistance of the materials is relatively sensitive to temperature. Therefore, it is highly feasible to use a detection metal layer 300 formed of copper or aluminum as a temperature sensor.

[0062] The resistive layer 400 is the target structure for which the temperature resistivity needs to be tested.

[0063] Specifically, in this embodiment, the resistive layer 400 is a thin film resistance (TFR).

[0064] In this embodiment, by applying different test currents to the resistive layer 400, the resistive layer 400 has the characteristic of easily generating Joule heat under the test current. Therefore, there is no need to use a probe chuck to heat up the test environment, as the resistive layer 400 itself can achieve the heating effect. At the same time, the detection metal layer 300 located directly below it acts as a temperature sensor to detect the temperature change of the resistive layer 400. The temperature change is obtained based on the resistance change of the detection metal layer 300, and this temperature change can be used as the temperature change of the resistive layer 400. Finally, the temperature resistivity (TCR) of the resistive layer 400 can be obtained based on the obtained temperature change and the resistance change of the resistive layer 400.

[0065] Accordingly, in this embodiment, the first metal line 100 is electrically connected to the resistive layer 400, the resistive layer 400 is electrically connected to the second metal line 200, the second metal line 200 is electrically connected to the detection metal layer 300, and the detection metal layer 300 is electrically isolated from the first metal line 100. The first metal line 100 has a first signal loading terminal F1 and a first signal testing terminal S1, the second metal line 200 has a second signal loading terminal F2 and a second signal testing terminal S2, and the detection metal layer 300 has a third signal loading terminal F3 and a third signal testing terminal S3. Therefore, in this embodiment, a path can be formed by the first metal line 100, the resistive layer 400, the second metal line 200, and the detection metal layer 300 connected in series, or a path can be formed by the second metal line 200 and the detection metal layer 300 connected in series.

[0066] In this embodiment, the test structure further includes a first interconnect via structure 510, located between the first metal line 100 and the resistive layer 400, wherein the first metal line 100 and the resistive layer 400 are electrically connected through the first interconnect via structure 510.

[0067] The first through-hole interconnect structure 510 is used to electrically connect the first metal line 100 and the resistor layer 400 to realize the basic circuit structure.

[0068] In this embodiment, the test structure further includes a second interconnect via structure 520, located between the second metal line 200 and the resistive layer 400, wherein the second metal line 200 and the resistive layer 400 are electrically connected through the second interconnect via structure 520.

[0069] The second via interconnect structure 520 is used to electrically connect the second metal line 200 and the resistor layer 400 to realize the basic circuit structure.

[0070] Accordingly, the present invention also provides a testing method. Figure 3 This is a flowchart of an embodiment of the testing method of the present invention.

[0071] Reference Figure 2 and Figure 3 Step S1: Provide the test structure provided in the aforementioned embodiments.

[0072] The test structure in this embodiment is used to detect the temperature coefficient of resistance (TCR) of the resistive layer. The TCR value measures the change in resistance with temperature, and its magnitude is closely related to the purity and processing performance of the resistive layer material. Generally, the higher the purity of the resistive layer material, the smaller its TCR value, and the better the stability of the resistance value with temperature changes. Therefore, the TCR value can serve as an important indicator for evaluating the quality and processing performance of the resistive layer material.

[0073] In this embodiment, the detection metal layer 300 is electrically connected to the second metal line 200, and the second metal line 200 is electrically connected to the resistive layer 400. The resistive layer 400 is connected in series with the detection metal layer 300 located directly below it. During the testing of the test structure, the self-heating effect of the resistive layer 400 under different currents is used to transfer the temperature to the detection metal layer 300 directly below it. The detection metal layer 300 is used as a temperature sensor, and the temperature coefficient of resistance (TCR) of the resistive layer 400 can be calculated by detecting the temperature change of the metal layer 300. Compared with the scheme of calculating the temperature coefficient of resistance by heating the resistive layer, this scheme does not require a lengthy heating process, saves test time, improves test efficiency, and the parameter calculation of the detection metal layer 300 is relatively simple, which is conducive to realizing a fast and convenient test method.

[0074] In this embodiment, in the step of providing the test structure, one end of the first metal line 100 is electrically connected to the resistive layer 400, and the other end includes a first signal loading terminal F1 and a first signal testing terminal S1; one end of the second metal line 200 is electrically connected to the resistive layer 400, and the other end includes a second signal loading terminal F2 and a second signal testing terminal S2; one end of the detection metal layer 300 is electrically connected to the second metal line 200, and the other end includes a third signal loading terminal F3 and a third signal testing terminal S3.

[0075] The first signal loading terminal F1 is used to load an electrical signal from the first metal line 100, the first signal testing terminal S1 is used to detect an electrical signal from the first metal line 100, the second signal loading terminal F2 is used to load an electrical signal from the second metal line 200, the second signal testing terminal S2 is used to detect an electrical signal from the second metal line 200, the third signal loading terminal F3 is used to load an electrical signal from the detection metal layer 300, and the third signal testing terminal S3 is used to detect an electrical signal from the detection metal layer 300.

[0076] In this embodiment, the first signal loading terminal F1 and the first signal testing terminal S1 are separate ports, and the first signal testing terminal S1 is connected to the first metal line 100 near the resistive layer 400. The second signal loading terminal F2 and the second signal testing terminal S2 are separate ports, and the second signal testing terminal S2 is connected to the second metal line 200 near the resistive layer 400. The third signal loading terminal F3 and the third signal testing terminal S3 are separate ports, respectively connected to the other end of the detection metal layer 300. Therefore, when using the first signal testing terminal S1, the second signal testing terminal S2 and the third signal testing terminal S3 to detect circuit signals, this embodiment can use four terminals for measurement, thereby reducing the influence of the resistance of the leads (such as the first metal line 100 and the second metal line 200) on the measurement results.

[0077] In this embodiment, before performing the first path test and the second path test, the method further includes: obtaining the initial detection resistance of the detection metal layer 300 under room temperature conditions.

[0078] The initial detection resistance of the detection metal layer 300 at room temperature is obtained for subsequent calculation of the first and second temperatures.

[0079] In this embodiment, obtaining the initial detection resistance of the detection metal layer 300 at room temperature includes: performing an initial path test at room temperature, wherein the initial path is composed of the second metal line 200 and the detection metal layer 300 connected in series.

[0080] Specifically, an initial pathway test was performed at room temperature (25°C) to obtain the initial detection resistance of the detection metal layer 300.

[0081] In this embodiment, an initial path test is performed by applying an initial current to the initial path.

[0082] Specifically, in this embodiment, during the initial path test, an initial current is applied to the initial path through the second signal loading terminal F2 and the third signal loading terminal F3, while the first signal loading terminal F1 is in a floating state and is not connected to an electrical signal.

[0083] In this embodiment, the initial detection resistance of the detection metal layer 300 is obtained based on the initial path test.

[0084] In this embodiment, obtaining the initial detection resistance of the detection metal layer 300 based on the initial path test includes: obtaining the initial voltage difference across the detection metal layer 300.

[0085] Specifically, in this embodiment, the initial voltage difference between the two sides of the detection metal layer 300 is obtained through the second signal test terminal S2 and the third signal test terminal S3.

[0086] In this embodiment, the second signal loading terminal F2 and the second signal testing terminal S2 are separate ports, and the second signal testing terminal S2 is connected to the second metal line 200 near the resistive layer 400. The third signal loading terminal F3 and the third signal testing terminal S3 are separate ports, respectively connected to the other end of the detection metal layer 300. The initial detection resistance is calculated by passing an initial current through the second signal loading terminal F2 and the third signal loading terminal F3, and detecting the initial voltage difference through the second signal testing terminal S2 and the third signal testing terminal S3. That is, the four-terminal method is used for measurement, thereby reducing the influence of the resistance of the lead (e.g., the first metal line 100 and the second metal line 200) on the initial detection resistance.

[0087] In this embodiment, the initial detection resistance is calculated based on the initial voltage difference and the initial current.

[0088] In this embodiment, expression R is used. S0 =(V S20 -V S30 The initial sensing resistance is calculated based on the initial voltage difference and initial current, where V0 S20 To detect the voltage on one side of metal layer 300, V S30 To detect the voltage on the other side of metal layer 300, I0 is the initial current, R S0 This is the initial detection resistor.

[0089] Specifically, V S20 V is the voltage at the second signal test terminal S2. S30 The voltage at the third signal test terminal S3.

[0090] Step S2: Perform the first path test. The first path is composed of a first metal line 100, a resistive layer 400, a second metal line 200, and a detection metal layer 300 connected in series.

[0091] Perform a first-path test to obtain the electrical signals related to the resistive layer 400 and the detection metal layer 300 in the first path.

[0092] In this embodiment, the first path is tested by applying a first current to the first path.

[0093] Specifically, in this embodiment, during the first path test, a first current is applied to the first path through the first signal loading terminal F1 and the third signal loading terminal F3, while the second signal loading terminal F2 is in a floating state and is not connected to an electrical signal.

[0094] In this embodiment, the first path test includes: obtaining the first temperature of the detection metal layer 300 under the first path conditions.

[0095] The first temperature of the detection metal layer 300 under the first path condition is obtained, which is used to subsequently obtain the temperature difference between the first path and the second path.

[0096] In this embodiment, obtaining the first temperature of the detection metal layer 300 under the first path condition includes: obtaining the first detection resistance of the detection metal layer 300 under the first path condition.

[0097] The first detection resistance of the detection metal layer 300 under the first path condition is obtained, which is used to calculate the temperature difference between the first path and the second path in the subsequent calculation.

[0098] In this embodiment, obtaining the first detection resistance of the detection metal layer 300 under the first path condition includes: obtaining the first detection voltage difference across the detection metal layer 300.

[0099] Specifically, in this embodiment, the first detection voltage difference between the two sides of the detection metal layer 300 is obtained through the second signal test terminal S2 and the third signal test terminal S3.

[0100] In this embodiment, the second signal loading terminal F2 and the second signal testing terminal S2 are separate ports, and the second signal testing terminal S2 is connected to the second metal line 200 near the resistive layer 400. The third signal loading terminal F3 and the third signal testing terminal S3 are separate ports, respectively connected to the other end of the detection metal layer 300. The first detection resistance is calculated by loading a first current into the first path through the first signal loading terminal F1 and the third signal loading terminal F3, and detecting the first detection voltage difference through the second signal testing terminal S2 and the third signal testing terminal S3. That is, the four-terminal method is used for measurement, thereby reducing the influence of the resistance of the lead (e.g., the first metal line 100 and the second metal line 200) on the first detection resistance.

[0101] In this embodiment, the first detection resistance is calculated based on the first detection voltage difference and the first current.

[0102] In this embodiment, expression R is used. S1 =(V S21 -V S31 The first detection resistance is calculated based on the first detection voltage difference and the first current, where V... S21 To detect the voltage on one side of metal layer 300, V S31 To detect the voltage on the other side of metal layer 300, I1 is the first current, R S1 This is the first detection resistor.

[0103] Specifically, V S21 V is the voltage at the second signal test terminal S2. S31 The voltage at the third signal test terminal S3.

[0104] In this embodiment, the first temperature is calculated based on the initial detection resistance and the first detection resistance.

[0105] Specifically, in this embodiment, an expression is used. The first temperature is calculated based on the initial sensing resistance and the first sensing resistance, where R S O is the initial detection resistor, R S 1 represents the first sensing resistor, TCR0 represents the temperature resistivity of the sensing metal layer 300 at room temperature, and T0 represents room temperature. S1 This is the first temperature.

[0106] As an example, in this embodiment, if the material of the detection metal layer 300 is aluminum, then TCR0 is 0.0033 / ℃; if the material of the detection metal layer 300 is copper, then TCR0 is 0.0031 / ℃.

[0107] In this embodiment, the first path test also includes: obtaining the first resistance of the resistive layer 400 under the first path condition.

[0108] The first resistance of the resistive layer 400 under the first path condition is obtained for subsequent calculation of the temperature resistivity.

[0109] In this embodiment, obtaining the first resistance of the resistive layer 400 under the first path condition includes: obtaining the first resistance voltage difference on both sides of the resistive layer 400.

[0110] Specifically, in this embodiment, the first resistance voltage difference between the two sides of the resistance layer 400 is obtained through the first signal test terminal S1 and the second signal test terminal S2.

[0111] In this embodiment, the first signal loading terminal F1 and the first signal testing terminal S1 are separate ports, and the first signal testing terminal S1 is connected to the first metal wire 100 near the resistive layer 400. The second signal loading terminal F2 and the second signal testing terminal S2 are separate ports, and the second signal testing terminal S2 is connected to the second metal wire 200 near the resistive layer 400. The first resistance is calculated by loading a first current onto the first path through the first signal loading terminal F1 and the third signal loading terminal F3, and by detecting the voltage difference of the first resistance through the first signal testing terminal S1 and the second signal testing terminal S2. That is, the four-terminal method is used for measurement, thereby reducing the influence of the resistance of the leads (e.g., the first metal wire 100 and the second metal wire 200) on the first resistance.

[0112] In this embodiment, the first resistance is calculated based on the voltage difference between the first resistors and the first current.

[0113] In this embodiment, the expression R1 = (V S11 -V S21 The first resistance is calculated based on the voltage difference between the first resistor and the first current.

[0114] Specifically, V S11 V is the voltage at the first signal test terminal S1. S21 This refers to the voltage at the second signal test terminal S2.

[0115] Step S3: Perform a second path test. The second path is composed of a first metal line 100, a resistive layer 400, a second metal line 200, and a detection metal layer 300 connected in series. The current in the second path is greater than the current in the first path.

[0116] A second-path test was performed to obtain the electrical signals related to the resistive layer 400 and the detection metal layer 300 in the second path.

[0117] In this embodiment, the current in the second path is greater than that in the first path. The resistive layer 400 has the characteristic of easily generating Joule heat when current passes through it. Therefore, the resistive layer 400 in the second path can achieve the effect of heating itself. At the same time, the detection metal layer 300 located directly below it acts as a temperature sensor to detect the temperature change of the resistive layer 400. The temperature change is obtained based on the resistance change of the detection metal layer 300. This temperature change can be used as the temperature change of the resistive layer 400. Finally, the temperature resistivity (TCR) of the resistive layer 400 can be obtained based on the obtained temperature change and the resistance change of the resistive layer 400.

[0118] In this embodiment, a second current is applied to the second path to perform a second path test.

[0119] Specifically, in this embodiment, during the second path test, a second current is applied to the second path through the first signal loading terminal F1 and the third signal loading terminal F3, and the second signal loading terminal F2 is in a floating state and is not connected to an electrical signal.

[0120] In this embodiment, the second path test includes: obtaining the second temperature of the detection metal layer 300 under the second path conditions.

[0121] The second temperature of the detection metal layer 300 under the second path condition is obtained, which is used to subsequently obtain the temperature difference between the first path and the second path.

[0122] In this embodiment, obtaining the second temperature of the detection metal layer 300 under the second path condition includes: obtaining the second detection resistance of the detection metal layer 300 under the second path condition.

[0123] The second detection resistance of the detection metal layer 300 under the second path condition is obtained and used for subsequent calculation of the temperature difference between the first path and the second path.

[0124] In this embodiment, obtaining the second detection resistance of the detection metal layer 300 under the second path condition includes: obtaining the second detection voltage difference across the detection metal layer 300.

[0125] Specifically, in this embodiment, the second detection voltage difference between the two sides of the detection metal layer 300 is obtained through the second signal test terminal S2 and the third signal test terminal S3.

[0126] In this embodiment, referring to the aforementioned method for measuring the first detection voltage difference, the second detection resistance is calculated by applying a second current to the second path through the first signal loading terminal F1 and the third signal loading terminal F3, and detecting the second detection voltage difference through the second signal test terminal S2 and the third signal test terminal S3. That is, the four-terminal method is used for measurement, thereby reducing the influence of the resistance of the lead wires (e.g., the first metal wire 100 and the second metal wire 200) on the second detection resistance.

[0127] In this embodiment, the second detection resistor is calculated based on the second detection voltage difference and the second current.

[0128] In this embodiment, expression R is used. S2 =(V S22 -V S32 The second detection resistance is calculated based on the second detection voltage difference and the second current, where V... S22 To detect the voltage on one side of metal layer 300, VS 32 To detect the voltage on the other side of metal layer 300, I2 is the first current, R S2 This is the first detection resistor.

[0129] Specifically, V S22 V is the voltage at the second signal test terminal S2. S32 The voltage at the third signal test terminal S3.

[0130] In this embodiment, the second temperature is calculated based on the initial detection resistance and the second detection resistance.

[0131] Specifically, in this embodiment, an expression is used. The second temperature is calculated based on the initial sensing resistance and the second sensing resistance, where R SO R is the initial sensing resistor. S2 The second sensing resistor, TCR0, is the temperature resistivity of the sensing metal layer 300 at room temperature, and T0 is the room temperature. S2 This is the second temperature.

[0132] As an example, in this embodiment, if the material of the detection metal layer 300 is aluminum, then the TCR0 is 0.0033 / ℃; if the material of the detection metal layer 300 is copper, then the TCR0 is... O It is 0.0031 / ℃.

[0133] In this embodiment, the second path test further includes: obtaining the second resistance of the resistive layer 400 under the second path condition.

[0134] The second resistance of the resistive layer 400 under the second path condition is obtained for subsequent calculation of the temperature resistivity.

[0135] In this embodiment, obtaining the second resistance of the resistive layer 400 under the second path condition includes: obtaining the second resistance voltage difference on both sides of the resistive layer 400.

[0136] Specifically, in this embodiment, the second resistance voltage difference across the resistive layer 400 is obtained through the first signal test terminal S1 and the second signal test terminal S2.

[0137] In this embodiment, referring to the aforementioned method for measuring the voltage difference of the first resistor, the second resistance is calculated by applying a second current to the second path through the first signal loading terminal F1 and the third signal loading terminal F3, and detecting the voltage difference of the second resistor through the first signal test terminal S1 and the second signal test terminal S2. That is, the four-terminal method is used for measurement, thereby reducing the influence of the resistance of the lead wires (e.g., the first metal wire 100 and the second metal wire 200) on the second resistance.

[0138] In this embodiment, the second resistor is calculated based on the voltage difference between the second resistor and the second current.

[0139] In this embodiment, the expression R2 = (V S12 -V S22 The second resistor is calculated based on the voltage difference between the second resistor and the second current.

[0140] Specifically, V S12 V is the voltage at the first signal test terminal S1. S22 This refers to the voltage at the second signal test terminal S2.

[0141] Execute step S4: Obtain the temperature difference between the detection metal layer 300 under the second path condition and the first path condition.

[0142] The temperature difference of the detection metal layer 300 under the second path condition and the first path condition is obtained to characterize the temperature difference of the resistive layer 400 under the second path condition and the first path condition.

[0143] Specifically, in this embodiment, obtaining the temperature difference between the detection metal layer 300 under the second path condition and the first path condition includes: obtaining the difference between the second temperature and the first temperature as the temperature difference.

[0144] In this embodiment, an expression is used. The difference between the second temperature and the first temperature is obtained as the temperature difference.

[0145] Step S5: Obtain the temperature resistivity of the resistive layer 400 based on the temperature difference of the detected metal layer 300.

[0146] Specifically, the temperature difference of the metal layer 300 is used as the temperature difference of the resistive layer 400 in the first and second paths, thereby the temperature resistivity of the resistive layer 400 can be calculated.

[0147] In this embodiment, the temperature resistivity coefficient of the resistive layer 400 is obtained based on the temperature difference of the detected metal layer 300, including: calculating the temperature resistivity coefficient based on the first resistance, the second resistance, and the temperature difference.

[0148] Specifically, in this embodiment, an expression is used. The temperature resistivity is calculated based on the first resistance, the second resistance, and the temperature difference, where R1 is the first resistance, R2 is the second resistance, and ΔT is the temperature difference. S TCR is the temperature difference, and TCR is the temperature resistivity.

[0149] It should be noted that the current passing through the resistor layer 400 is set to I. i At that time, the temperature of the resistive layer rose to T at 400. Ri The temperature detected by the temperature sensor (i.e., the detection metal layer 300) is T. si ,R th Given the thermal resistance between the resistive layer 400 and the sensing metal layer 300, the following formula applies:

[0150] P×R th =I1 2 R1R th =ΔT=T Ri -T Si

[0151] Among them, the current I through the resistive layer 400 i The resistance R1 of the resistive layer 400 and the temperature T of the sensing metal layer 30. si R can be obtained according to the method described in the foregoing embodiments. th The thermal resistance between the resistive layer 400 and the detection metal layer 300 (in the aforementioned embodiments, its conduction path has been shortened as much as possible to reduce its Rt) is... h Since the thermal resistance of a fixed material and structure can be calculated using its intrinsic formula, R th = t / kA, where t is the dielectric layer thickness from the resistive layer 400 to the detection metal layer 300, and A is the cross-sectional area of ​​the dielectric layer between the resistive layer 400 and the detection metal layer 300. The dielectric layer thickness t and the cross-sectional area A can be determined according to the design, and the thermal conductivity k of commonly used dielectric layer materials can also be found by querying.

[0152] The actual temperature difference ΔT of the resistive layer 400 under the first current in the first path and the second current in the second path R According to the following formula:

[0153] (I2 2 R2-I1 2 R1)×R th =T R2 -T R1 -(T S2-T S1 )=ΔT R -ΔT S

[0154] Calculation yields:

[0155] ΔT R =ΔT S +(I2 2 R2-I1 2 R1)×R th ≥ΔT S

[0156]

[0157] Based on the above calculations, the actual ΔT of the 400-ohm resistive layer can be determined. R ≥ΔT S Therefore, ΔT can be used. S The temperature resistivity of the resistive layer 400 is calculated by using the temperature difference as the reference temperature, thereby determining the upper limit of the temperature resistivity of the resistive layer 400. This allows for accurate measurement of the temperature resistivity during testing, provided that ΔT is used. S If the calculated temperature resistivity of the resistive layer 400 does not exceed the threshold (meets the standard), that is, if the upper limit of the temperature resistivity of the resistive layer 400 does not exceed the threshold (meets the standard), then the test structure is qualified.

[0158] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A test structure, characterized in that, include: The substrate includes a detection area, a first lead area located on one side of the detection area, and a second lead area located on the other side of the detection area; The first metal wire is located in the substrate of the first lead area; The second metal wire is located in the substrate of the second lead region; A detection metal layer is located in the substrate of the detection area. The detection metal layer is electrically isolated from the first metal line and electrically connected to the second metal line. A resistive layer is located above the substrate of the detection area. The resistive layer extends above the substrate of the first lead area and is electrically connected to the first metal wire. The resistive layer also extends above the substrate of the second lead area and is electrically connected to the second metal wire.

2. The test structure as described in claim 1, characterized in that, The detection metal layer is formed by a series of metal lines that extend along a first direction and are arranged in parallel along a second direction, forming a serpentine shape. The second direction is the direction from the first lead area to the second lead area, and the first direction is perpendicular to the second direction.

3. The test structure as described in claim 1 or 2, characterized in that, The ratio of the total length to the width of the detected metal layer is greater than or equal to 714.

4. The test structure as described in claim 1, characterized in that, The longitudinal spacing between the detection metal layer and the resistive layer is 0.2 μm to 0.3 μm.

5. The test structure as described in claim 1, characterized in that, The test structure further includes: a first interconnect via structure located between the first metal line and the resistive layer, wherein the first metal line and the resistive layer are electrically connected through the first interconnect via structure; A second interconnect via structure is located between the second metal line and the resistive layer, and the second metal line and the resistive layer are electrically connected through the second interconnect via structure.

6. The test structure as described in claim 1, characterized in that, One end of the first metal wire is electrically connected to the resistive layer, and the other end includes a first signal loading terminal and a first signal testing terminal. One end of the second metal wire is electrically connected to the resistive layer, and the other end includes a second signal loading terminal and a second signal testing terminal; One end of the detection metal layer is electrically connected to the second metal line, and the other end includes a third signal loading end and a third signal testing end.

7. The test structure as described in claim 1, characterized in that, The material of the first metal wire includes copper or aluminum; the material of the second metal wire includes copper or aluminum; and the material of the detection metal layer includes copper or aluminum.

8. A testing method, characterized in that, Provide a test structure as described in any one of claims 1 to 7; The first path test is performed. The first path is composed of the first metal line, the resistive layer, the second metal line, and the detection metal layer connected in series. A second path test is performed. The second path is composed of the first metal line, the resistive layer, the second metal line, and the detection metal layer connected in series. The current in the second path is greater than the current in the first path. The temperature difference of the detected metal layer under the second path condition and the first path condition is obtained; The temperature resistivity of the resistive layer is obtained based on the temperature difference of the detected metal layer.

9. The test method as described in claim 8, characterized in that, Perform the first pathway test, including: Obtain the first temperature of the detected metal layer under the first path conditions; Performing the second path test includes: obtaining the second temperature of the detection metal layer under the second path conditions; Obtaining the temperature difference of the detection metal layer under the second path condition and the first path condition includes: obtaining the difference between the second temperature and the first temperature as the temperature difference.

10. The test method as described in claim 9, characterized in that, Before performing the first path test and the second path test, the method further includes: obtaining the initial detection resistance of the detection metal layer under room temperature conditions; Obtaining the first temperature of the detection metal layer under the first path condition includes: obtaining the first detection resistance of the detection metal layer under the first path condition; The first temperature is calculated based on the initial detection resistor and the first detection resistor; Obtaining the second temperature of the detection metal layer under the second path condition includes: obtaining the second detection resistance of the detection metal layer under the second path condition; The second temperature is calculated based on the initial detection resistor and the second detection resistor.

11. The test method as described in claim 10, characterized in that, Using expressions The first temperature is calculated based on the initial detection resistor and the first detection resistor, where R So R is the initial detection resistor. S1 The first detection resistor is TCR0, which is the temperature resistivity of the detection metal layer at room temperature, and T0 is the room temperature. S1 The first temperature; Using expressions The second temperature is calculated based on the initial detection resistor and the second detection resistor, where R S0 R is the initial detection resistor. S2 The second detection resistor is TCR0, which is the temperature resistivity of the detection metal layer at room temperature, and T0 is the room temperature. S2 The second temperature; Using expressions The difference between the second temperature and the first temperature is obtained as the temperature difference.

12. The test method as described in claim 10, characterized in that, The first path is tested by applying a first current to the first path. Obtaining the first detection resistance of the detection metal layer under the first path condition includes: obtaining the first detection voltage difference across the detection metal layer; Calculate the first detection resistance based on the first detection voltage difference and the first current; The second path is tested by applying a second current to the second path. Obtaining the second detection resistance of the detection metal layer under the second path condition includes: obtaining the second detection voltage difference across the detection metal layer; The second detection resistance is calculated based on the second detection voltage difference and the second current.

13. The test method as described in claim 12, characterized in that, Using expression R S1 =(V S21 -V S31 The first detection resistance is calculated based on the first detection voltage difference and the first current, where V S21 V is the voltage on one side of the detected metal layer. S31 I1 is the voltage on the other side of the detected metal layer, and R is the first current. S1 The first detection resistor; Using expression R S2 =(V S22 -V S32 The second detection resistance is calculated based on the second detection voltage difference and the second current, where V S22 V is the voltage on one side of the detected metal layer. S32 I2 is the voltage on the other side of the detected metal layer, and R is the second current. S2 This is the second detection resistor.

14. The test method as described in claim 10, characterized in that, Obtaining the initial detection resistance of the detection metal layer at room temperature includes: performing an initial path test at room temperature, wherein the initial path is formed by the second metal line and the detection metal layer connected in series. The initial detection resistance of the detection metal layer is obtained based on the initial path test.

15. The test method as described in claim 14, characterized in that, The initial path is tested by applying an initial current to the initial path. The initial detection resistance of the detection metal layer is obtained based on the initial path test, including: obtaining the initial voltage difference across the detection metal layer; The initial detection resistance is calculated based on the initial voltage difference and the initial current.

16. The test method as described in claim 12, characterized in that, Performing the first path test further includes: obtaining the first resistance of the resistive layer under the first path conditions; The second path test further includes: obtaining the second resistance of the resistive layer under the second path conditions; Obtaining the temperature resistivity of the resistive layer based on the temperature difference of the detected metal layer includes: calculating the temperature resistivity based on the first resistance, the second resistance, and the temperature difference.

17. The test method as described in claim 16, characterized in that, Using expressions The temperature resistivity is calculated based on the first resistance, the second resistance, and the temperature difference, where R1 is the first resistance, R2 is the second resistance, and ΔT... S TCR is the temperature difference, and TCR is the temperature resistivity.

18. The test method as described in claim 16, characterized in that, Obtaining the first resistance of the resistive layer under the first path condition includes: obtaining the first resistance voltage difference across the resistive layer; Calculate the first resistance based on the voltage difference between the first resistors and the first current; Obtaining the second resistance of the resistive layer under the second path condition includes: obtaining the second resistance voltage difference across the resistive layer; The second resistor is calculated based on the voltage difference between the second resistor and the second current.

19. The test method as described in claim 18, characterized in that, Using the expression R1=(V S11 -V S21 ) / I1 calculates the first resistance based on the voltage difference between the first resistor and the first current; Using the expression R2=(V S12 -V S22 The second resistor is calculated based on the voltage difference between the second resistor and the second current.

20. The test method as described in claim 12, 15, or 19, characterized in that, In the step of providing the test structure, one end of the first metal wire is electrically connected to the resistive layer, and the other end includes a first signal loading terminal and a first signal testing terminal; One end of the second metal wire is electrically connected to the resistive layer, and the other end includes a second signal loading terminal and a second signal testing terminal; One end of the detection metal layer is electrically connected to the second metal wire, and the other end includes a third signal loading end and a third signal testing end; In the first path test and the second path test, a first current is applied to the first path and a second current is applied to the second path through the first signal loading terminal and the third signal loading terminal; a first detection voltage difference and a second detection voltage difference are obtained through the second signal testing terminal and the third signal testing terminal; a first resistance voltage difference and a second resistance voltage difference are obtained through the first signal testing terminal and the second signal testing terminal. In the initial path test, an initial current is applied to the initial path through the second signal loading terminal and the third signal loading terminal; the initial voltage difference across the detection metal layer is obtained through the second signal testing terminal and the third signal testing terminal.

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