Bonding apparatus, bonding method, and article manufacturing method

Abstract

The invention provides a bonding apparatus, a bonding method, and an article manufacturing method. The joining apparatus performs a joining process of joining a second member to a plurality of regions of a first member, the joining apparatus including: an observer; an engagement mechanism configured to engage each of a plurality of second members to one of the plurality of regions; and a controller configured to execute a determination process of determining positions of the plurality of regions by measuring a position of a selected region among the plurality of regions using the observer, and control the joining process based on the positions of the plurality of regions. The controller determines to re-execute the determination process in accordance with the state of the engagement process.

Description

Technical Field

[0001] This disclosure relates to a joining device, a joining method, and a method of manufacturing an article. Background Technology

[0002] Japanese Patent Application Publication No. 2023-77928 describes a joining device for joining a second object to a first object. The joining device described in Japanese Patent Application Publication No. 2023-77928 includes a first camera for capturing an image of the first object and a second camera for capturing an image of the second object, and positions the second object at a joining target position of the first object based on the output of the first camera and the output of the second camera.

[0003] When information about the positions of multiple bonding target regions on a substrate is obtained by measurement and then a die is bonded to multiple bonding target regions based on that information, if the position of the substrate changes or the substrate deforms during bonding, the die cannot be bonded to the correct position on the substrate. Summary of the Invention

[0004] This disclosure provides a technique that facilitates precise bonding.

[0005] A first aspect of this disclosure provides a bonding apparatus that performs a bonding process of bonding a second member to a plurality of regions of a first member, the bonding apparatus comprising: an observer; a bonding mechanism configured to bond each of a plurality of second members to one of the plurality of regions; and a controller configured to perform a decision process of determining the position of the plurality of regions by measuring the position of a selected region among the plurality of regions using the observer, and to control the bonding process based on the position of the plurality of regions, wherein the controller determines to re-execute the decision process based on the status of the bonding process.

[0006] A second aspect of this disclosure provides a method for manufacturing an article, comprising: engaging a second member to a first member using a engagement device as defined in the first aspect to obtain an engaged article; and processing the engaged article to obtain an article.

[0007] A third aspect of this disclosure provides a joining method comprising: performing a decision process to determine the position of a plurality of regions by measuring the position of a selected region among a plurality of regions of a first member using an observer; performing a joining process to join one of a plurality of second members to each of the plurality of regions based on the position of the plurality of regions determined by the decision process; and re-executing the decision process according to the status of the joining process.

[0008] A fourth aspect of this disclosure provides a method for manufacturing an article, comprising: joining a second component to a first component according to a joining method to obtain a joined article, wherein the joining method includes: performing a decision process to determine the positions of the plurality of regions by measuring the positions of selected regions among a plurality of regions of the first component using an observer; performing a joining process to join one of a plurality of second components to each of the plurality of regions based on the positions of the plurality of regions determined by the decision process; re-executing the decision process according to the status of the joining process; and processing the joined article to obtain an article.

[0009] The features of this disclosure will become apparent from the following description of embodiments with reference to the accompanying drawings. The following description of embodiments is given by way of example. Attached Figure Description

[0010] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the specification, serve to explain the principles of the embodiments.

[0011] Figure 1 This is a schematic diagram illustrating the construction of the coupling device according to an embodiment;

[0012] Figure 2 This is a schematic diagram illustrating the structure of the substrate stage;

[0013] Figure 3 This is a schematic diagram used to illustrate grains;

[0014] Figure 4 This is a flowchart illustrating the joining process; and

[0015] Figure 5 This is a flowchart illustrating the method for determining the necessity of alignment measurements. Detailed Implementation

[0016] In the following, embodiments will be described in detail with reference to the accompanying drawings. Please note that the following embodiments are not intended to limit the scope of the claims. Several features are described in the embodiments, but not all of these features are necessary, and multiple features can be appropriately combined. Furthermore, in the drawings, the same reference numerals are given the same or similar constructions, and redundant descriptions are omitted.

[0017] Figure 1This is a schematic diagram illustrating the construction of the bonding device BD according to an embodiment. The bonding device BD can be configured to bond a second member to multiple regions on a first member. In the specification and drawings, directions will be indicated in an XYZ coordinate system, in which a horizontal surface is defined as the XY plane. Typically, a substrate 6, which is the first member, is placed on a substrate stage 43 such that the surface of the substrate 6 becomes parallel to the horizontal plane (XY plane). In the following description, directions orthogonal to each other in a plane along the surface of the substrate 6 placed on the substrate stage 43 will be defined as the X-axis and Y-axis, and a direction perpendicular to the X-axis and Y-axis will be defined as the Z-axis. Furthermore, in the following description, directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system will be referred to as the X direction, Y direction, and Z direction, respectively.

[0018] In the specification and drawings, suffixes attached to the reference numerals are used to indicate a specific one of those represented by the reference numerals. For example, Figure 1 The coupling device shown includes a strip mirror 432, and the strip mirror 432 may include orientation-specific strip mirrors 432a and 432b (see [link to documentation]). Figure 2 This will be described later. When it is necessary to specify a particular direction of the bar mirror, use a reference numeral with a suffix, such as bar mirror 432a or bar mirror 432b. Conversely, when it is not necessary to specify the bar mirror, use a reference numeral without a suffix, such as bar mirror 432.

[0019] The first component can be a substrate (wafer) for manufacturing semiconductor devices. The second component can be a diced die, such as a semiconductor device. However, the first and second components are not limited to these. For example, the first component can be a silicon interposer obtained by forming wiring on a silicon substrate, a glass interposer obtained by forming wiring on a glass substrate, or an organic interposer obtained by forming wiring on an organic panel (PCB). Alternatively, the first component can be a component obtained by bonding a die that already includes a semiconductor device to a substrate for manufacturing semiconductor devices. Alternatively, the second component can be a stack of multiple diced dies, small wafers, optical elements, MEMS, etc.

[0020] Furthermore, the method of joining the first and second components is not limited to a specific joining method. For example, any joining method can be used, such as joining using adhesives, temporary joining using temporary adhesives, joining by hybrid joining, atomic diffusion joining, vacuum joining, and bump joining. A variety of temporary joining methods and permanent joining methods are available.

[0021] The following will illustrate an industrial application example of the coupling device BD according to this disclosure.

[0022] A first application example is the fabrication of stacked memory. When bonding devices are applied to the fabrication of stacked memory, the first component can be a substrate on which the memory, as a semiconductor device, is fabricated, and the second component can be a diced memory die. For example, when eight layers are stacked, in the bonding of the eighth layer, the first component is a substrate on which six layers of memory dies have already been bonded. Note that the top layer is sometimes the driver die that drives the memory.

[0023] A second application example is heterogeneous integration of processors. Traditional processors typically form a System-on-a-Chip (SoC) where logic circuitry and SRAM are integrated into a single semiconductor element. In contrast, in heterogeneous integration, processors are manufactured by applying processes optimized for each element to fabricate components on separate substrates and then bonding them together. This allows for reduced processor costs and increased yield. When bonding apparatus (BD) is applied to heterogeneous integration, the first component can be a substrate on which memory, as a semiconductor device, is fabricated, and the second component can be a die diced after probing, such as SRAM, an antenna, or a driver. Typically, different dies are bonded sequentially to the substrates. For example, if SRAM bonding is performed first, then when bonding the die immediately adjacent to the SRAM, the first component is the logic substrate to which the SRAM die is bonded.

[0024] A third application example is 2.5D bonding using a silicon interposer. The silicon interposer is a silicon wafer to which wiring is formed. 2.5D bonding is a method of bonding diced dies and electrically connecting them using a silicon interposer. In the case of applying the bonding apparatus BD to die bonding of a silicon interposer, the first component can be the silicon interposer obtained by forming wiring on the silicon wafer, and the second component can be the diced die. Typically, multiple types of dies are bonded to the silicon interposer; therefore, the first component includes the silicon interposer to which some dies have already been bonded.

[0025] A fourth application example is 2.1D bonding using an organic or glass interposer. The organic interposer is an organic panel (PCB or CCL substrate) used as a packaging substrate, on which wiring is formed. The glass interposer is a glass panel with wiring formed on it. 2.1D bonding is a method of bonding diced dies to an organic or glass interposer and electrically bonding the dies through wiring on the interposer. When the bonding apparatus BD is applied to die bonding of an organic interposer, the first component can be an organic panel with wiring formed, and the second component can be a diced die. When the bonding apparatus BD is applied to die bonding of a glass interposer, the first component can be a glass panel with wiring formed, and the second component can be a diced die. Typically, multiple types of dies are bonded to the organic or glass interposer; therefore, the first component includes an organic or glass interposer to which some dies have already been bonded.

[0026] The fifth application example is heterogeneous substrate bonding. For example, InGaAs is known as a high-sensitivity material in infrared image sensors. A method for manufacturing a high-sensitivity, high-speed infrared image sensor has been proposed, using InGaAs as the sensor unit for receiving light and silicon, capable of forming high-speed processing dies, as the logic circuit for extracting data. However, for InGaAs crystals, only substrates with diameters as small as 4 inches can be mass-produced, which is smaller than the mainstream 300 mm silicon wafer. Therefore, a method for bonding diced InGaAs substrates to 300 mm silicon wafers with logic circuits formed has been proposed. In this way, the bonding of substrates with different materials and sizes is called heterogeneous substrate bonding. When applying the bonding apparatus BD to heterogeneous substrate bonding, the first component can be a substrate with a large diameter, such as a silicon wafer, and the second component can be a small material sheet, such as InGaAs. Note that the small material sheet is a slice of crystal and is preferably cut into a rectangular shape.

[0027] To provide a detailed example, the following description will be made based on the assumption that the first component is a substrate (wafer) for manufacturing semiconductor devices, and the second component is a diced die comprising semiconductor devices.

[0028] The bonding device BD may include a pickup mechanism 3 and a bonding mechanism 4. The pickup mechanism 3 and the bonding mechanism 4 may be mounted on a base 1 damped by a support 2. The bonding device BD can be configured to bond a diced die 51, which is a second component, to various regions of a plurality of regions on a substrate 6, which is a first component. The die 51 may be provided, for example, in the form of a die 51 arranged on a cutting strip disposed on a cutting frame 5. Figure 1 In the example shown, the pickup mechanism 3 and the engagement mechanism 4 are mounted on a base 1. However, the pickup mechanism 3 and the engagement mechanism 4 can be mounted on separate bases.

[0029] The pickup mechanism 3 may include a pickup head 31 and a release head 32. The release head 32 peels the dicing tape from the die 51, and the pickup head 31 picks up the die 51 that has been peeled off by the release head 32. The pickup head 31 rotates about the Y-axis such that the picked-up die 51 faces upward, and conveys the die 51 to the bonding head 423. The bonding head 423 may include an adsorption mechanism 424 configured to adsorb and hold the die 51.

[0030] The joining mechanism 4 may include a stage base 41, an upper base 42, a substrate stage 43, and a stage drive mechanism 436. The substrate stage 43 may be mounted on the stage base 41. The substrate stage 43 may be translated in the X and Y directions by the stage drive mechanism 436, which includes a motor such as a linear motor, and may be rotated about the Z-axis. The substrate stage 43 may be configured to be rotated about the X-axis and / or tilted about the Y-axis by the stage drive mechanism 436. Note that instead of rotating and / or tilting the substrate stage 43, the joining head 423 may be rotated and / or tilted.

[0031] A die observation camera 431 (second observer) is mounted on the substrate stage 43. The die observation camera 431 includes an image capturing device and an optical system for forming an image of the target on the imaging surface of the image capturing device. The die observation camera 431 can be configured, for example, to measure the position of feature points of the die 51 as a second component, the external dimensions of the die 51, and the distance between multiple points on the measurement surface in the height direction (Z direction). Thus, the die observation camera 431 can be used to measure the position, external dimensions, and flatness of the die 51 held by the bonding head 423.

[0032] A bar-shaped mirror 432 can be arranged on the side surface of the substrate stage 43. The bar-shaped mirror 432 can be used as a target for the interferometer 422, which is a measuring device. In addition, a substrate chuck 433, which is the first component, can be mounted, clamped, or held on the substrate stage 43. The clamping method of the substrate chuck 433 can be vacuum adsorption, electrostatic chuck, or any other method.

[0033] The upper base 42 supports a substrate observation camera 421 (observer). The substrate observation camera 421 can be configured to measure the position of feature points on the substrate 6, for example, as a first component, and the distance between multiple points in the height direction. Therefore, the position and flatness of multiple bonding target areas of the substrate 6 can be measured. The substrate observation camera 421 includes an image capturing device and an optical system for forming an image of the target object on the imaging surface of the image capturing device. Additionally, the upper base 42 supports an interferometer 422 and a bonding head 423. The interferometer 422 is a measuring device configured to measure the position of the substrate stage 43, and the bonding head 423 is configured to hold a die 51, which is a second component transported from the pickup head 31. The substrate observation camera 421 can be, for example, a camera using infrared light as a measurement light source. The substrate observation camera 421 can be configured to measure, for example, element patterns and / or markings formed on the surface or inside the substrate 6.

[0034] A lifting mechanism 450 can be mounted on a substrate stage 43. The lifting mechanism 450 can be configured to drive a substrate chuck 433 in the Z direction to bond the die 51 to a bonding target area on the substrate 6. The lifting mechanism 450 can be configured to drive the substrate stage 43 in the Z direction. The bonding operation can include a proximity operation that brings the bonding head 423 and the substrate chuck 433 closer together to bring the die 51 and the substrate 6 into contact, and a separation operation that moves the bonding head 423 and the substrate chuck 433 away from each other after the proximity operation. The lifting mechanism 450 can perform the proximity operation by driving the substrate chuck 433 in the +Z direction and the separation operation by driving the substrate chuck 433 in the -Z direction. Alternatively, the proximity operation can be performed by moving the bonding head 423 in the +Z direction and the separation operation by moving the bonding head 423 in the -Z direction. Alternatively, bonding can be performed by moving both the bonding head 423 and the substrate chuck 433 in the Z direction. In other words, the lifting mechanism 450 is an example of a relative drive mechanism that drives the coupling head 423 and the substrate chuck 433 relative to each other to change the spacing between the die 51 and the substrate 6. When the substrate chuck 433 is driven by such a relative drive mechanism, the position of the substrate chuck 433 in the Z direction is controlled in real time by feedback while being measured by the interferometer 422.

[0035] In the above description, the pick-up head 31 rotates and conveys the die to the bonding head 423. However, two or more die holders may be provided, relaying the die between the die holders before conveying it to the bonding head 423. Alternatively, the bonding head 423 can be moved to a position to receive the die 51 via a drive mechanism. Furthermore, to improve productivity, multiple pick-up mechanisms, multiple pick-up heads, multiple release heads, and multiple bonding heads can be arranged.

[0036] The controller 441 comprehensively controls all the constituent components of the bonding device BD. The controller 441 may be, for example, a PLD (Programmable Logic Device) (such as an FPGA (Field Programmable Gate Array)), an ASIC (Application-Specific Integrated Circuit), a general-purpose computer or a special-purpose computer with a program installed, or a combination of some or all of them. The controller 441 may be located inside the housing 460 of the bonding device BD or outside the housing 460. A controller 441 located outside the housing 460 of the bonding device BD can, for example, be implemented as a control server via a computer connected via a network to the main body of the bonding device BD (the part housed within the housing 460).

[0037] Figure 2 This diagram shows the substrate stage 43 as viewed in the positive Z-axis direction. The substrate 6 can be held by a substrate chuck 433. The bar mirror 432 includes at least two bar mirrors 432a and 432b, enabling the measurement of the position of the substrate 6 in the X and Y directions and the amount of rotation about the Z-axis. Bar mirror 432a is the target of interferometers 422a and 422c configured to measure the position in the X direction. The amount of rotation about the Z-axis can be measured based on the difference between the measurements obtained by interferometers 422a and 422c. Bar mirror 432b is the target of interferometer 422b configured to measure the position in the Y direction. The interferometer 422 is capable of measuring the position of the substrate stage 43 in the X and Y directions and the amount of rotation about the Z-axis in real time. The controller 441 can provide real-time feedback to the console drive mechanism 436 based on the measurement results of the interferometer 422, and accurately position the substrate stage 43. In the manner described above, the substrate 6 or substrate stage 43 can be positioned by feedback control based on precise position measurement performed by an interferometer, which is a measuring device.

[0038] A reference plate 434 with multiple markings (such as markings 434a, 434b, and 434c) can be arranged next to the substrate chuck 433. The reference plate 434 preferably has a low coefficient of thermal expansion and features markings arranged with high positional accuracy. In an example, the reference plate 434 can be a quartz substrate on which the markings are formed using a semiconductor photolithography process. Preferably, the reference plate 434 is configured to be at the same level as the surface of the substrate 6 and can be observed by the substrate observation camera 421. However, a separate camera for reference plate observation can also be configured. The substrate stage 43 can include a coarse stage capable of being driven over a wide range, and a micro stage arranged on the coarse stage and capable of being driven with high precision over a small range. In this case, the die observation camera 431, the strip mirror 432, the substrate chuck 433, and the reference plate 434 can be fixed on the micro stage for precise positioning.

[0039] The following describes a method for ensuring the origin position, magnification, X-axis direction, and Y-axis direction (rotation) of the substrate stage 43, as well as the orthogonality between the X and Y axes, using a reference plate 434. An image of marker 434a is captured by a substrate observation camera 421, and the measurement value of the interferometer 422 when marker 434a is located at the center of the image acquired by the substrate observation camera 421 is defined as the origin of the substrate stage 43. Next, an image of marker 434b is captured by the substrate observation camera 421, and when marker 434b is located at the center of the image acquired by the substrate observation camera 421, the Y-axis direction and the magnification in the Y direction of the substrate stage 43 are determined based on the measurement value of the interferometer 422. Then, an image of marker 434c is captured by the substrate observation camera 421, and when marker 434c is located at the center of the image acquired by the substrate observation camera 421, the X-axis direction and the magnification in the X direction of the substrate stage 43 are determined based on the measurement value of the interferometer 422. That is, the direction from mark 434b to mark 434a on the reference plate 434 is defined as the Y direction, and the direction from mark 434c to mark 434a is defined as the X direction, and the orientation and orthogonality of the axes are calibrated. Alternatively, calibration can be performed simultaneously by defining the interval between marks 434b and 434a as a scale reference in the Y direction and the interval between marks 434c and 434a as a scale reference in the X direction. The measurements of the interferometer 422 can vary when the refractive index of the optical path of the interferometer 422 changes due to variations in atmospheric pressure and temperature. Therefore, calibration is preferably performed at arbitrary timing to ensure the origin position, magnification, rotation, and orthogonality of the positioning mechanism PM of the positioning substrate 6. The positioning mechanism PM may include a substrate stage 43, an interferometer 422, and a stage drive mechanism 436. To reduce variations in the measurements of the interferometer 422, the substrate stage 43 may be arranged in a temperature-controlled chamber, wherein the temperature is controlled within the interior space of the temperature-controlled chamber.

[0040] Instead of using the substrate observation camera 421 to capture images of the reference plate 434 on the substrate stage 43, a configuration can be used where the reference plate 434 is attached to the upper base 42, and the die observation camera 431 captures images of the reference plate 434. This configuration also ensures the origin position, magnification, rotation, and orthogonality of the positioning mechanism, including the substrate stage 43, the interferometer 422, and the stage drive mechanism 436.

[0041] Alternatively, instead of taking an image of the reference plate 434 for calibration, a configuration could be used, for example, to perform calibration by abutting against a reference surface. Alternatively, a position measurement unit, such as a white interferometer, could be used for precise positioning, for which absolute value is guaranteed.

[0042] The following will refer to Figure 3 and Figure 4A joining method according to a first embodiment is described. Figure 3 This is a diagram illustrating the measurement surface of grain 51, which serves as the second component. Figure 4 This is a flowchart illustrating the joining method. Figure 3 In this design, the direction from the sheet surface to the near side is defined as the X direction, the direction to the right on the sheet surface is defined as the Y direction, and the direction upward on the sheet surface is defined as the Z direction. The grain 51 includes a bonding surface 51a and a non-bonding surface 51b, which are opposite sides of the grain. The bonding surface 51a may include a bonding surface element pattern 501 and a bonding surface alignment mark 502. The non-bonding surface 51b may include a through-hole array pattern 503.

[0043] In step S1001, controller 441 controls a substrate transport device (not shown) to load substrate 6 into bonding apparatus BD. Bonding failure may occur if foreign matter adheres to the multiple bonding target areas and / or the bonding surface 51a of the die 51 on substrate 6. Therefore, the internal space of the housing 460 of bonding apparatus BD is a clean space of approximately Class 1. Note that the multiple bonding target areas on substrate 6 will also be referred to as the multiple areas of substrate 6 below. To maintain high cleanliness, substrate 6 may also be housed in a container such as a FOUP with high airtightness and high cleanliness, and substrate 6 may be loaded from the container into the internal space of bonding apparatus BD. Furthermore, to improve the cleanliness of substrate 6, it may be cleaned after being loaded into the internal space. Additionally, pretreatment for bonding may be performed on substrate 6. For example, when bonding is performed using an adhesive, the adhesive may be applied to substrate 6. When bonding is performed by hybrid bonding, a treatment to activate the surface of substrate 6 may be performed. The pre-alignment unit (not shown) can adjust the rotation direction of the substrate 6 based on a notch or orientation plane formed on the substrate 6, and perform coarse positioning of the substrate 6 based on its shape. The substrate 6 can then be held by the substrate chuck 433 on the substrate stage 43.

[0044] In step S1002, the controller 441 captures an image of the substrate 6 using the substrate observation camera 421. The focus adjustment of the substrate observation camera 421 can be performed using a focus adjustment mechanism disposed within the substrate observation camera 421, or by driving the substrate 6 in the Z direction using the Z-drive mechanism of the substrate stage 43. Alignment measurement can be performed as a determination process for the positions of multiple bonding target areas on the substrate 6 by measuring the position of alignment marks formed on the substrate 6. If no alignment marks are formed on the substrate 6, alignment measurement can be performed by measuring feature points whose positions can be specified. The controller 441 can measure the position of the feature points by measuring the position of the projected image of the feature points in the captured image relative to the center of the captured image obtained by capturing the image through the substrate observation camera 421.

[0045] To accurately measure the position of the alignment mark relative to the reference point of the bonding device BD, calibration can be performed beforehand. During calibration, the controller 441 can drive the substrate stage 43 based on a determined command value, such that the mark formed on the reference plate 434 is positioned at a specific location (e.g., the center) within the field of view of the substrate viewing camera 421. The controller 441 then uses the substrate viewing camera 421 to measure the position of the mark on the reference plate 434. Next, the controller 441 can determine an offset for correcting the command value based on the command value given to drive the substrate stage 43 and the position of the mark measured using the substrate viewing camera 421. This allows for high-precision measurement of the relative position of the alignment mark with respect to the reference point of the bonding device BD. Typically, the reference point of the bonding device BD is the position of a specific mark on the reference plate 434. However, other locations are also possible, as long as the location can be used as a reference.

[0046] Because the interferometer 422 has a narrow measurement range in the rotation direction, the amount of rotation that can be corrected by rotating the substrate stage 43 is small. Therefore, if the rotation of the substrate 6 is large, it is preferable to correct the rotation and hold the substrate again. If the substrate 6 is held again, the alignment measurement is performed again. During this process, it is preferable to use a height measuring unit (not shown) that measures the surface position of the bonding surface of the substrate 6 to measure the surface position of the substrate 6. This is because the thickness of the substrate 6 varies, and the surface position of the substrate 6 is important for accurately managing the gap between the substrate 6 (first component) and the die 51 (second component) during the bonding operation.

[0047] With the reference plate 434 ensuring the origin, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the substrate stage 43, the position of the mounted substrate 6 relative to the origin, X-axis, and Y-axis of the substrate stage 43 can be measured. Semiconductor devices are arranged in various of a plurality of bonding target regions on the substrate 6. The plurality of bonding target regions on the substrate 6 are typically arranged at a predetermined period. Typically, these semiconductor devices are arranged periodically with nanometer-level precision. Therefore, in the alignment measurement, which is the process for determining the position of the plurality of bonding target regions on the substrate 6, it is not necessary to measure the position of all regions where semiconductor devices are arranged. For example, the position of feature points of semiconductor devices arranged in three or more regions (sample regions) selected from the plurality of regions can be measured. Then, the (actual) positions of the plurality of semiconductor devices can be determined by statistical processing based on the measurement results and the design array information of the plurality of semiconductor devices (multiple regions). Alignment information indicating the (actual) positions of multiple semiconductor devices (multiple regions) can be determined, for example, the origin position of a repeating array of multiple semiconductor devices, the amount of rotation in the X-axis and Y-axis directions, the orthogonality of the X-axis and Y-axis, and the multiplier error of the repetition period.

[0048] The substrate chuck 433 preferably includes a mechanism for adjusting the temperature of the substrate 6. This is because the coefficient of thermal expansion of the silicon substrate is 3 ppm / °C, and if the temperature of a 300 mm substrate increases by 1°C, the position at the outermost periphery will shift by 150 mm × 0.000003 = 0.00045 mm = 450 nm. If the positions of multiple bonding target areas change after alignment measurement (determination processing), the die 51 cannot be bonded to the respective areas of the substrate 6 with high precision. Therefore, it is preferable to adjust the temperature of the substrate 6 with an accuracy of ±0.1°C or lower.

[0049] Note that if substrate 6 is an interposer layer forming wiring, the array of semiconductor devices is not measured; instead, the array of repeatedly formed wiring is measured. Furthermore, if substrate 6 is not patterned, alignment measurements (determination processing) are not performed.

[0050] The operation of the substrate 6, which serves as the first component, has been described above. Next, the operation of the die 51, which serves as the second component operating in parallel, will be described.

[0051] In step S2001, a cutting frame with grains cut by a cutter arranged on a cutting strip is loaded into the bonding device BD. Bonding failure may occur if foreign matter adheres to the bonding surface. Therefore, the cutting frame can be transported in a highly sealed container that maintains high cleanliness. To improve cleanliness, the grains on the cutting frame can be cleaned within the internal space of the bonding device BD. The rotation direction and displacement position of the cutting frame can be roughly determined based on its shape using a pre-alignment unit (not shown).

[0052] In step S2002, the pick-up head 31 picks up the die 51. Specifically, the controller 441 moves the pick-up head 31 and the release head 32 to the position of the die 51 to be picked up. While the pick-up head 31 holds or holds the die 51, the controller 441 causes the release head 32 to peel the die 51 from the cutting strip.

[0053] In step S2003, controller 441 controls pick-up head 31 to transfer die 51 to bonding head 423. Bonding head 423 can adsorb and hold die 51 by adsorption mechanism 424. When die 51 is picked up in step S2002, the semiconductor device surface of die 51 is located on the side of pick-up head 31. However, on bonding head 423, die 51 is held such that the semiconductor device surface is located on the side opposite to bonding head 423. This transfer can be performed by moving pick-up head 31 to the position of bonding head 423. Alternatively, the transfer can be performed by relaying die 51 between pick-up head 31 and bonding head 423 by one or more holders. Furthermore, pre-treatment for bonding can be performed midway through the transfer. Pre-treatment may include, for example, cleaning treatment of die 51. Furthermore, in the case of bonding using adhesive, pre-treatment may include treatment of applying adhesive. In the case of hybrid bonding, pre-treatment may include treatment of activating the surface of die 51.

[0054] Through the above operations, a state is obtained in which the substrate 6, which serves as the first component, is held by the substrate chuck 433, and the die 51, which serves as the second component, is held by the connector 423.

[0055] Subsequently, in step S1003, the position of the die 51 held by the bonding head 423 is measured. More specifically, the controller 441 drives the substrate stage 43 such that feature points of the die 51 fall within the field of view of the die observation camera 431. These feature points may be element patterns or alignment marks on the die bonding surface 51a. Alternatively, all or part of the measured dimensions and shape of the die 51 may be treated as feature points. Focus adjustment can be performed, for example, by the focus adjustment mechanism of the die observation camera 431. Alternatively, focus adjustment can be performed by Z-driving the die 51 using the Z-drive mechanism of the bonding head 423. Alternatively, focus adjustment can be performed by driving the die observation camera 431 in the Z direction using the Z-drive mechanism of the substrate stage 43 on which the die observation camera 431 is mounted.

[0056] Here, in the semiconductor manufacturing process, alignment marks are formed on scribing lines for alignment. However, alignment marks may be removed from the die during dicing. Therefore, in many cases, the die 51 does not have alignment marks. Therefore, the position of the die 51 can be measured using the terminals of an array of pads or bumps arranged on the die bonding surface 51a, regions whose positions can be specified due to their non-periodic array, or the shape of the die 51 as feature points. The controller 441 can measure the position of the feature points by measuring the position of the projected image of the feature points in the captured image relative to the center of the captured image obtained by the die viewing camera 431. In step S1003, multiple feature points in the die 51 are measured, thereby measuring the amount of rotation of the die 51. To measure multiple feature points, the substrate stage 43 can be sequentially positioned at multiple locations for measurement. Alternatively, the field of view of the die viewing camera 431 can be wide enough that the positions of multiple feature points can be measured within this field of view.

[0057] The rotation of the die 51 can be corrected by rotating the substrate stage 43 during bonding. However, since the interferometer has a narrow measurement range in the rotation direction, if the rotation of the die 51 is large, it is preferable to correct the rotation and hold the die 51 again. If the die 51 is held again, the position of the die 51 needs to be measured again.

[0058] During this process, it is preferable to use a height measuring unit (not shown) that measures the surface position of the bonding surface 51a of the die 51 to measure the surface position of the die 51. This is because the thickness variation of the die 51 and the surface position of the die 51 are important for accurately managing the gap between the die 51 and the substrate 6 during the bonding operation. Additionally, it is preferable to measure the height of multiple positions on the die 51, and during bonding, the orientation of the die 51 or the substrate 6 is adjusted by a tilting mechanism (not shown). The tilting mechanism can be disposed in any one of the substrate stage 43, the substrate chuck 433, and the bonding head 423. In this process, the measured position of the feature points of the die 51 is associated with the external dimensional information of the die 51 itself. In this association, the external shape of the die 51 is associated with the position of the component pattern or alignment mark on the die bonding surface 51a. The controller 441 stores this association information in an internal or external storage device of the bonding apparatus BD.

[0059] As described above, in step S1003, the controller 441 can measure the component pattern or alignment marks on the die bonding surface 51a, which are feature points of the die 51, as well as all or part of the external shape of the die 51. Then, the controller 441 associates the positions of the feature points of the die 51 with the external dimensional information of the die 51 itself and stores this information. Alternatively, in this process, instead of performing such measurements, the controller 441 can obtain information about the die 51 to be bonded from outside the bonding device BD and thus store this information in the bonding device BD.

[0060] In step S1004, the controller 441 drives the substrate stage 43 based on the alignment information determined by the alignment measurement (decision processing), so that the die 51 is positioned above the bonding target area on the substrate 6. Here, while measuring the position of the substrate stage 43 using the interferometer 422, the controller 441 provides real-time feedback control of the substrate stage 43, thereby accurately positioning the substrate stage 43. That is, in step S1002, the controller 441 can perform a decision processing to determine the position of multiple regions by measuring the position of a region (sample region) selected from multiple regions on the substrate 6 using the substrate observation camera 421 (observer). Then, in step S1004, the controller 441 can control the bonding process based on the alignment information indicating the position of the multiple regions on the substrate 6.

[0061] Next, in step S1005, the controller 441 bonds the die 51 to the bonding target area on the substrate 6. More specifically, the controller 441 controls the lifting mechanism 450, which acts as a relative drive mechanism, to perform a proximity operation that brings the bonding head 423 and the substrate stage 43 closer together, thereby bringing the die 51 and the bonding target area on the substrate 6 into contact. After contact is established between the die 51 and the bonding target area on the substrate 6, the controller 441 controls the lifting mechanism 450 to perform a separation operation that moves the bonding head 423 and the substrate stage 43 away from each other.

[0062] In step S1006, the controller 441 determines whether bonding of the die 51 to all the multiple bonding target regions on the substrate 6 has been completed. Typically, dozens to hundreds of semiconductor devices are formed on a substrate 6. As the die is bonded to each semiconductor device, the die bonding is repeated multiple times. If the die 51 has not been bonded to all the bonding target regions on the substrate 6, the process proceeds to step S1007.

[0063] Note that here, the determination process in step S1006 is performed after step S1005. However, the determination process in step S1006 can also be performed in advance (e.g., at a timed point before step S2002), and the die pick-up operation in step S2002 can be performed in parallel during the processing from step S1003 to step S1005. Furthermore, when bonding multiple types of dies to a semiconductor device, bonding of the next type of die can begin after bonding of one type of die to all semiconductor devices on a substrate is completed. In this case, the next type of die is picked up in step S2002. At this time, necessary processes are performed, such as loading the dicing frame with the next type of die mounted.

[0064] In step S1007, the controller 441 determines the necessity of another alignment measurement based on the status of the bonding process. Here, in the bonding apparatus BD, when bonding the die 51 to the bonding target area on the substrate 6, the position of the substrate 6 may change due to the force applied to the substrate 6. Furthermore, if the die 51 and the substrate 6 are made of materials with different properties, the bonding may cause warping of the substrate 6 due to the difference in the coefficients of thermal expansion between the die 51 and the substrate 6. If a change in the position of the substrate 6 or warping of the substrate 6 occurs after the alignment measurement, it will be impossible to accurately bond the die 51 to the bonding target area on the substrate 6.

[0065] The bonding process is the process of bonding the die 51, which serves as a second component, to multiple bonding target regions on the substrate 6, which serves as a first component. This is, for example... Figure 4 The process is illustrated in the flowchart. The status of the bonding process may include, for example, at least one of the following: the progress of the bonding process, the state of the die 51 bonded to the substrate 6 during the bonding process, the state change of the substrate 6 during the bonding process, and the state change of the bonding mechanism 4 during the bonding process. In other words, the controller 441 can determine the status of the bonding process based on, for example, at least one of the following: the progress of the bonding process, the state of the die 51 bonded to the substrate 6 during the bonding process, the state change of the substrate 6 during the bonding process, and the state change of the bonding mechanism 4 during the bonding process.

[0066] For example, the progress of the bonding process can be determined or specified based on information about the number of bonding areas completed among multiple bonding target areas on substrate 6. This information could be, for example, information indicating the number (n) of bonding areas completed among multiple bonding target areas on substrate 6. The number (n) could be related to the warpage of substrate 6. Alternatively, this information could be, for example, the ratio (a×n) of the sum of the areas (a) of the bonding areas completed among multiple bonding target areas to the surface area (A) of substrate 6. This ratio could also be related to the warpage of substrate 6.

[0067] The state of the die 51 bonded to the substrate 6 during the bonding process can be, for example, the position of the die 51 bonded to the substrate 6. The position of the die 51 bonded to the substrate 6 can be measured using a substrate observation camera 421 (observer). Alternatively, the state of the die 51 bonded to the substrate 6 during the bonding process can be, for example, the height of the die 51 bonded to the substrate 6. The height of the die 51 bonded to the substrate 6 can be measured using a height measuring unit (not shown) or a substrate observation camera 421 (observer).

[0068] The state change of substrate 6 during the bonding process can be, for example, at least one of a change in the position of substrate 6 and a deformation of substrate 6. The deformation of substrate 6 can be, for example, at least one of a change in the shape of substrate 6 projected onto the XY plane (horizontal plane) and warping of substrate 6. These can be measured using substrate observation camera 421 (observer).

[0069] The bonding mechanism 4 may be all or part of the bonding apparatus BD. The bonding mechanism 4 may include, for example, a positioning mechanism PM and a bonding head 423. Changes in the state of the bonding mechanism 4 during the bonding process may, for example, affect the bonding accuracy between the die 51 and the substrate 6. Changes in the state of the bonding mechanism 4 during the bonding process may, for example, be changes in the state of the substrate chuck 433 that holds the substrate 6. If the substrate chuck 433 is a vacuum chuck, then changes in the state of the substrate chuck 433 may be changes in the pressure of the vacuum line used for vacuum suction. Changes in the state of the bonding mechanism 4 during the bonding process may include changes in the state of the positioning mechanism PM that positions the substrate 6. Changes in the state of the positioning mechanism PM may, for example, include changes in the maximum value of the control deviation of the substrate stage 43.

[0070] The controller 441 can also determine the status of the bonding process based on log data indicating the operation of the bonding mechanism 4 in the bonding process (e.g., control deviation of the substrate stage 43). For example, if the log data indicates an anomaly (the maximum value of the control deviation of the substrate stage 43 exceeds a certain threshold), the controller 441 can decide to re-execute the alignment measurement (decision process).

[0071] Alternatively, the controller 441 can also, in parallel with the measurement process of measuring the position of the die 51 held by the bonding head 423 using the die observation camera 431, measure the position of a specific portion of the substrate 6 using the substrate observation camera 421 each time the die 51 is bonded to the substrate 6. Then, the controller 441 can determine the status of the bonding process based on the change in the position of this specific portion (feature point) of the substrate 6. This specific portion of the substrate 6 can be the location of the substrate 6 within the field of view of the substrate observation camera 421 when the position of the die 51 held by the bonding head 423 is measured using the die observation camera 431. Alternatively, this specific portion of the substrate 6 can be the portion of the substrate 6 that enters the field of view of the substrate observation camera 421 along the path of moving the substrate stage 43 to capture an image of the die 51 held by the bonding head 423 using the die observation camera 431. This operation helps to suppress delays in the bonding process (i.e., reduced throughput) caused by processes necessary to determine the necessity of another alignment measurement.

[0072] Figure 5 The process of the determination process in step S1007 is illustrated exemplarily. In step S3001, the controller 441 acquires determination data for determining the necessity of alignment measurements. The determination data may be data for specifying the status of the bonding process. More specifically, the determination data may be data for determining at least one of the following: the progress of the bonding process, the status of the grains 51 bonded to the substrate 6 during the bonding process, the change in the status of the substrate 6 during the bonding process, and the change in the status of the bonding mechanism 4 during the bonding process.

[0073] In step S3002, the controller 441 acquires conditions for determining the necessity of an alignment measurement, and in step S3003, the controller determines the necessity of another alignment measurement based on the acquired conditions. These conditions may include, for example, re-executing the alignment measurement if the number of joined regions among the plurality of joining target regions on the substrate 6 exceeds a predetermined threshold. Alternatively, the conditions may include re-executing the alignment measurement if the ratio (a×n) of the sum of the areas (a) of the joined regions among the plurality of joining target regions to the area (A) of the surface of the substrate 6 (a×n / A) exceeds a predetermined threshold. Alternatively, the conditions may include re-executing the alignment measurement if the error in the position of the die 51 bonded to the substrate 6 (deviation from the target position) exceeds a predetermined threshold. Alternatively, the conditions may include re-executing the alignment measurement if the height of the position of the die 51 bonded to the substrate 6 (deviation from a defined height) exceeds a predetermined threshold. Alternatively, the conditions may include re-executing the alignment measurement if at least one of the positional change of the substrate 6 and the deformation of the substrate 6 exceeds a predetermined threshold. Alternatively, the condition could be that if the change in the state of the bonding mechanism 4 exceeds a predetermined threshold, the alignment measurement is re-executed. Alternatively, if the position of a specific portion of the substrate 6, measured in parallel with the measurement process for the position of the measuring die 51, changes beyond a predetermined threshold, the controller 441 can re-execute the alignment measurement.

[0074] In the following text, we will refer again to Figure 4 The following description is provided. In step S1008, the controller 441 proceeds to the step based on the determination result in step S1007 (i.e., the result of determining the necessity of another alignment measurement). More specifically, when it is determined that another alignment measurement is needed, the controller 441 proceeds to step S2002 via step S1009. When it is determined that another alignment measurement is not needed, the controller 441 proceeds to step S2002 without going through step S1009.

[0075] In step S1009, as in step S1002, controller 441 performs alignment measurements. In summary, in steps S1007 and S1008, controller 441 determines to re-execute alignment measurements based on the status of the engagement process.

[0076] In step S2002, the pick-up head 31 picks up the next die 51 to be bonded. More specifically, the controller 441 moves the pick-up head 31 and the release head 32 to the position of the next die 51 to be picked up. While the controller 441 holds or retains the die 51 by the pick-up head 31, it causes the release head 32 to peel the next die 51 to be bonded from the cutting tape. Steps S2003 and steps S1003 to S1005 are then performed.

[0077] In step S1006, when it is determined that a die 51 bonding operation will be performed on all the plurality of bonding target regions on the substrate 6, in step S1010, the controller 441 controls the substrate transport device (not shown) to unload the substrate 6 from the bonding device BD. The unloaded substrate is returned to its original container, such as a FOUP, or to another container. Typically, due to variations in substrate thickness and the need for a wider gap between substrates than before bonding, the unloaded substrate is returned to another container.

[0078] The bonding process for one substrate 6 has been described above. When bonding multiple substrates 6, the bonding process described above is performed on each substrate 6.

[0079] Note that, typically, the loading of the substrate and the loading of the dicing frame are not synchronized because the number of dies on the dicing frame differs from the number of dies to be bonded to the substrate. If the dies on the dicing frame are used up before the bonding of dies to multiple regions on a substrate is completed, the next dicing frame is loaded. If the dies remain on the dicing frame even after the bonding of dies to multiple regions on a substrate is completed, the dies are used to bond to the next substrate.

[0080] According to the above process, even if the bonding process changes, such as if the substrate position changes after alignment measurement or the substrate warps, the alignment measurement (determination process) is re-executed. Therefore, the die can be correctly bonded to the target position on the substrate.

[0081] A method for manufacturing articles (e.g., semiconductor IC elements, liquid crystal display elements, or MEMS) using the aforementioned bonding apparatus BD is described. This article manufacturing method is applicable to manufacturing articles, such as microdevices or elements with microstructures, like semiconductor devices. The article manufacturing method according to an embodiment includes a bonding step of bonding a second component to a first component using the aforementioned bonding apparatus to obtain a bonded article, and a processing step of processing the bonded article obtained through the bonding step to obtain an article. Furthermore, the manufacturing method includes other known processes (e.g., probing, cutting, bonding, and encapsulation). Compared to conventional methods, the article manufacturing method according to this embodiment is advantageous in at least one aspect of article performance, quality, productivity, and production cost.

[0082] Although this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims should be given the broadest interpretation to cover all such variations and equivalent structures and functions.

Claims

1. A joining device configured to perform a joining process of joining a second member to a plurality of regions of a first member, the joining device comprising: Observer; A joining mechanism configured to join each of a plurality of second members to one of the plurality of regions; as well as A controller is configured to perform a decision-making process to determine the positions of the plurality of regions by measuring the position of a selected region among the plurality of regions using the observer, and to control the joining process based on the positions of the plurality of regions. The controller determines whether to re-execute the decision process based on the status of the engagement process.

2. The coupling device according to claim 1, wherein, The controller determines the status of the engagement process based on at least one of the following: the progress of the engagement process, the status of the second member engaged with the first member in the engagement process, the change in the status of the first member in the engagement process, and the change in the status of the engagement mechanism in the engagement process.

3. The coupling device according to claim 1, wherein, The controller determines the status of the joining process based on information about the number of joined regions among the plurality of regions.

4. The coupling device according to claim 1, wherein, The controller determines the status of the joining process based on the ratio of the sum of the areas of the joined regions among the plurality of regions to the surface area of ​​the first component.

5. The coupling device according to claim 1, wherein, The controller determines the status of the engagement process based on the position of the second component engaged with the first component.

6. The coupling device according to claim 1, wherein, The controller determines the status of the engagement process based on the height of the second component engaged with the first component.

7. The coupling device according to claim 1, wherein, The controller determines the state of the joining process based on at least one of the change in the position of the first member and the deformation of the first member during the joining process.

8. The coupling device according to claim 1, wherein, The engagement mechanism includes a chuck configured to retain the first member, and The controller determines the status of the engagement process based on the state of the chuck.

9. The coupling device according to claim 1, wherein, The engagement mechanism includes a positioning mechanism configured to position the first member, and The controller determines the status of the engagement process based on the state of the positioning mechanism.

10. The coupling device according to claim 1, wherein, The controller determines the status of the engagement process based on log data indicating the operation of the engagement mechanism during the engagement process.

11. The coupling device according to claim 10, wherein, If the log data indicates an anomaly, the controller decides to re-execute the decision process.

12. The joining device according to claim 1, further comprising a second observer, in, The engagement mechanism includes an engagement head configured to hold the next second member to be engaged among the plurality of second members. The controller, in parallel with the measurement process of measuring the position of the second member held by the engagement head using the second observer, measures the position of a specific portion of the first member each time the second member engages with the first member, and The controller determines the status of the joining process based on changes in the position of the specific part of the first component.

13. The coupling device according to claim 12, wherein The specific location is the part of the first member that is positioned within the field of view of the second observer when the position of the second member held by the joint is measured using the second observer.

14. A method for manufacturing an article, comprising: The second member is joined to the first member using the joining device as defined in any one of claims 1 to 13 to obtain a joined article; as well as Process the joined items to obtain an item.

15. A joining method, comprising: The decision process is performed to determine the position of the plurality of regions by measuring the position of a selected region among a plurality of regions of the first component using an observer; Based on the positions of the plurality of regions determined by the decision process, a joining process is performed to join one of the plurality of second components to each of the plurality of regions; as well as The decision process is re-executed based on the status of the engagement process.

16. A method for manufacturing an article, comprising: The second component is joined to the first component according to the joining method to obtain a joined article. The joining method includes: The decision process is performed to determine the position of the plurality of regions by measuring the position of a selected region among the plurality of regions of the first component using an observer; Based on the positions of the plurality of regions determined by the decision process, a joining process is performed to join one of the plurality of second components to each of the plurality of regions; and The decision process is re-executed based on the status of the engagement process; and Process the joined items to obtain an item.

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