Semiconductor device

Abstract

The embodiment provides a semiconductor device capable of realizing miniaturization. According to one embodiment, a semiconductor device includes a substrate having an insulating property. A plurality of electrodes are provided on a first surface of the substrate facing one side in the plate thickness direction. The substrate has a side surface covering portion that covers at least a portion of a side surface that intersects the first surface among the outer surfaces of the substrate. A portion of the first surface where the plurality of electrodes are not formed when viewed from the plate thickness direction is covered by the surface covering portion. The plurality of electrodes have one or more electrode pairs comprising a pair of electrodes arranged side by side along an edge portion of the first surface. The side surface covering part is connected with a part between at least one electrode pair in the surface covering part. The relative tracking index of each of the material constituting the surface covering portion and the material constituting the side surface covering portion is greater than the relative tracking index of the material constituting the substrate.

Description

[0001] Reference to relevant applications

[0002] This application enjoys priority based on Japanese Patent Application No. 2024-152499 (filed on September 4, 2021). This application includes all contents of the basic application by reference to that basic application. Technical Field

[0003] Embodiments of the present invention relate to semiconductor devices. Background Technology

[0004] In semiconductor devices, a creepage distance (hereinafter referred to as "creep distance") needs to be ensured between multiple electrodes formed on a substrate to prevent failures caused by tracking. Regarding the solder resist covering the substrate surface, products made of materials with a relatively high tracking index are widely available. Therefore, the creepage distance between electrodes on the substrate surface is easily shortened. Conversely, substrates made of materials with a relatively low tracking index compared to the solder resist material are widely available. Therefore, when multiple electrodes are arranged along the edge of the substrate, it is difficult to shorten the creepage distance between electrodes on the side of the substrate. Consequently, it is difficult to narrow the spacing between electrodes, thus hindering the miniaturization of semiconductor devices. Summary of the Invention

[0005] The problem to be solved by the present invention is to provide a semiconductor device that can be miniaturized.

[0006] The semiconductor device of the embodiment includes an insulating substrate. It has a plurality of electrodes formed on a first surface of the substrate facing the thickness direction. It has a side cover portion covering at least a portion of the side surface of the outer surface of the substrate that intersects with the first surface. A portion of the first surface where the plurality of electrodes are not formed when viewed from the thickness direction is covered by the side cover portion. The plurality of electrodes have one or more electrode pairs consisting of a pair of electrodes arranged along the edge of the first surface. The side cover portion and at least one electrode pair in the surface cover portion are partially connected. The relative tracking index of the materials constituting the surface cover portion and the materials constituting the side cover portion is greater than the relative tracking index of the material constituting the substrate. Attached Figure Description

[0007] Figure 1 This is a cross-sectional view of a semiconductor device illustrating an embodiment.

[0008] Figure 2 This is a perspective view of a semiconductor device illustrating an implementation method.

[0009] Figure 3 This is a perspective view showing a portion of a semiconductor device according to an embodiment.

[0010] Figure 4 This is a first top view illustrating the manufacturing process of a semiconductor device according to an embodiment.

[0011] Figure 5 This is a second top view illustrating the manufacturing process of the semiconductor device according to the embodiment.

[0012] Figure 6 This is a third top view illustrating the manufacturing process of the semiconductor device according to the embodiment.

[0013] Figure 7 This is a perspective view showing a portion of a semiconductor device according to a first variation of the embodiment.

[0014] Figure 8 This is a perspective view showing a portion of a semiconductor device according to a second variation of the embodiment.

[0015] Figure 9 This is a perspective view of a semiconductor device representing a third variation of the embodiment.

[0016] Figure 10 This is a perspective view of a semiconductor device representing a fourth variation of the embodiment.

[0017] Explanation of reference numerals in the attached figures

[0018] 10, 110, 210, 310, 410… Semiconductor devices

[0019] 21, 121, 221, 321...Substrate

[0020] 21a…First page

[0021] 21e…side view

[0022] 22, 122, 222, 322a... concave portion

[0023] 23…electrode

[0024] 24…electrode pairs

[0025] 26… Surface Covering

[0026] 29, 129, 229, 329a… Side Covering

[0027] 37…Sealing part, 440…Solder ball Detailed Implementation

[0028] Hereinafter, the semiconductor device according to the embodiments will be described with reference to the accompanying drawings.

[0029] The direction in which the Z-axis extends, as shown in the accompanying figures, is the thickness direction of the substrate. The side in which the arrow in the Z-axis direction points (+Z side) is the back side of the semiconductor device. The opposite side in which the arrow in the Z-axis direction points (-Z side) is the surface side of the semiconductor device. In the following description, the back side of the semiconductor device is referred to as the "back side" or "one side in the thickness direction," the surface side of the semiconductor device is referred to as the "surface side" or "the other side in the thickness direction," and the thickness direction of the substrate is simply referred to as the "thickness direction."

[0030] The first direction D1 shown in each figure is a direction orthogonal to the plate thickness direction. In the following description, the side in which the arrow of the first direction D1 points (+D1 side) is referred to as "one side of the first direction D1", and the opposite side of the side in which the arrow of the first direction D1 points (-D1 side) is referred to as "the other side of the first direction D1".

[0031] The second direction D2 shown in the accompanying drawings is a direction orthogonal to both the plate thickness direction and the first direction D1. In the following description, the side in which the arrow of the second direction D2 points (+D2 side) is referred to as "one side of the second direction D2", and the opposite side of the side in which the arrow of the second direction D2 points (-D2 side) is referred to as "the other side of the second direction D2".

[0032] (Implementation Method)

[0033] Figure 1 This is a cross-sectional view showing the semiconductor device 10 of this embodiment. Figure 2 This is a perspective view of the semiconductor device 10 according to this embodiment. Figure 3 This is a perspective view showing a portion of the semiconductor device 10 according to this embodiment. The semiconductor device 10 in this embodiment is, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), and an opto-relay. The semiconductor device 10 includes a substrate 20, a chip 31, a bonding layer 33, wires 35, and a sealing portion 37.

[0034] The substrate 20 is the back side (+Z side) portion of the semiconductor device 10. The substrate 20 is electrically connected to an external power source (not shown). The substrate 20 supplies power from the external power source to the chip 31. Additionally, the substrate 20 outputs power converted by the chip 31 to devices such as electric motors. The substrate 20 includes a substrate 21, electrodes 23, a surface cover 26, wiring portions 28, and side cover portions 29. In other words, the semiconductor device 10 includes a substrate 21, electrodes 23, and side cover portions 29.

[0035] The substrate 21 is a plate-shaped structure that extends in a direction orthogonal to the thickness direction. For example... Figure 2 As shown, when viewed from the thickness direction, substrate 21 is approximately rectangular with its long side extending along the second direction D2. Substrate 21 is insulating. Substrate 21 is a printed circuit board. In this embodiment, the material constituting substrate 21 has a comparative tracking index (CTI) of approximately 300. Figure 1 As shown, the substrate 21 has a first surface 21a and a second surface 21c. Figure 2 As shown, the substrate 21 has a side surface 21e.

[0036] Furthermore, the relative tracking index of each part of the semiconductor device 10 constituting this embodiment is measured based on the tracking resistance test method (IEC 60112) specified by the International Electrotechnical Commission. The relative tracking index is an indicator of the ease with which tracking occurs in an insulation. By using a material with a large relative tracking index, the creepage distance between the electrodes 23 required to avoid tracking can be shortened.

[0037] like Figure 1 As shown, the first surface 21a is the outer surface of the substrate 21 facing the back side, i.e., the side in the thickness direction (+Z side). The second surface 21c is the outer surface of the substrate 21 facing the surface side, i.e., the other side in the thickness direction (-Z side). Figure 2 As shown, side surface 21e is a surface on the outer surface of substrate 21 facing a direction orthogonal to the thickness direction. Side surface 21e intersects with both the first surface 21a and the second surface 21c. In this embodiment, side surface 21e is orthogonal to both the first surface 21a and the second surface 21c. Side surface 21e includes a first side surface 21f, a second side surface 21g, a third side surface 21h, and a fourth side surface 21j. In this embodiment, a recess 22 is provided in side surface 21e.

[0038] The first side face 21f is the side facing the second direction D2 (+D2 side). The second side face 21g is the side facing the other side of the second direction D2 (-D2 side). The third side face 21h is the side facing the first direction D1 (+D1 side). The fourth side face 21j is the side facing the other side of the first direction D1 (-D1 side).

[0039] The recess 22 is a recessed area that is orthogonal to the plate thickness direction. In this embodiment, the recess 22 is provided on the first side surface 21f. The recess 22 is recessed from the first side surface 21f toward the other side (-D2 side) in the second direction D2. The recess 22 may also be provided on any one of the second side surface 21g, the third side surface 21h, and the fourth side surface 21j. In this embodiment, the recess 22 is open on both the back side, i.e., one side in the plate thickness direction (+Z side), and the surface side, i.e., the other side in the plate thickness direction (-Z side). The recess 22 may also not be open to the surface side. In this case, the recess 22 is only open on the back side. When viewed from the second direction D2, the recess 22 is approximately rectangular. Furthermore, the recess 22 may not be provided on the side surface 21e.

[0040] Electrode 23 is a plate-shaped electrode extending in a direction orthogonal to the plate thickness direction. When viewed from the plate thickness direction, electrode 23 is generally rectangular with its long side extending along the second direction D2. Electrode 23 is formed on the first surface 21a of substrate 21. In this embodiment, substrate portion 20 has a plurality of electrodes 23. In this embodiment, substrate portion 20 has four electrodes 23. The plurality of electrodes 23 includes a first electrode 23a, a second electrode 23b, a third electrode 23c, and a fourth electrode 23d.

[0041] According to this embodiment, as described above, the plurality of electrodes 23 are plate-shaped structures extending in a direction orthogonal to the plate thickness direction. Therefore, it is easy to reduce the size of each electrode 23 in the plate thickness direction. As a result, the size of the semiconductor device 10 in the plate thickness direction can be reduced. Therefore, miniaturization of the semiconductor device 10 can be achieved.

[0042] The first electrode 23a and the second electrode 23b are arranged along the edge of the first surface 21a on one side (+D2 side) of the second direction D2. The first electrode 23a and the second electrode 23b are arranged at intervals in the first direction D1. The first electrode 23a is positioned on the other side (-D1 side) of the first direction D1, relative to the second electrode 23b. When viewed from the plate thickness direction, the ends of the first electrode 23a and the second electrode 23b on the second direction D2 side overlap with the edge of the first surface 21a on the second direction D2 side. The first electrode 23a is located on the other side of the first direction D1, relative to the recess 22. In this embodiment, when viewed from the plate thickness direction, the end of the recess 22 on the other side of the first direction D1 overlaps with the end of the first electrode 23a on the first direction D1 side. The second electrode 23b is located on the side of the recess 22 on the first direction D1 side. When viewed from the plate thickness direction, the end of the recess 22 on the first direction D1 side overlaps with the end of the second electrode 23b on the other side of the first direction D1 side.

[0043] The third electrode 23c is positioned on the opposite side (-D2 side) of the first electrode 23a in the second direction D2. When viewed from the second direction D2, the third electrode 23c overlaps with the first electrode 23a. When viewed from the plate thickness direction, the edge of the third electrode 23c on the opposite side of the second direction D2 overlaps with the edge of the first surface 21a on the opposite side of the second direction D2.

[0044] The fourth electrode 23d is positioned on the opposite side (-D2 side) of the second electrode 23b in the second direction D2. When viewed from the second direction D2, the fourth electrode 23d overlaps with the second electrode 23b. When viewed from the plate thickness direction, the edge of the fourth electrode 23d on the opposite side of the second direction D2 overlaps with the edge of the first surface 21a on the opposite side of the second direction D2. The third electrode 23c and the fourth electrode 23d are arranged along the edge of the first surface 21a on the opposite side of the second direction D2. The third electrode 23c and the fourth electrode 23d are arranged at intervals in the first direction D1.

[0045] The first electrode 23a and the third electrode 23c are arranged along the edge of the first surface 21a on the other side (-D1 side) of the first direction D1. The first electrode 23a and the third electrode 23c are arranged at intervals in the second direction D2. The second electrode 23b and the fourth electrode 23d are arranged along the edge of the first surface 21a on one side (+D1 side) of the first direction D1. The second electrode 23b and the fourth electrode 23d are arranged at intervals in the second direction D2.

[0046] The plurality of electrodes 23 includes an electrode pair 24 consisting of a pair of electrodes 23 arranged along the edge of the first surface 21a. In this embodiment, the plurality of electrodes 23 includes four electrode pairs 24. That is, the plurality of electrodes 23 includes one or more electrode pairs 24. The number of electrode pairs 24 included in the plurality of electrodes 23 can be three or less, or five or more. The plurality of electrode pairs 24 includes a first electrode pair 24a, a second electrode pair 24b, a third electrode pair 24c, and a fourth electrode pair 24d.

[0047] The first electrode pair 24a is composed of the first electrode 23a and the second electrode 23b. The second electrode pair 24b is composed of the third electrode 23c and the fourth electrode 23d. The third electrode pair 24c is composed of the first electrode 23a and the third electrode 23c. The fourth electrode pair 24d is composed of the second electrode 23b and the fourth electrode 23d.

[0048] The surface cover portion 26 covers the portion of the first surface 21a of the substrate 21 where multiple electrodes 23 are not formed when viewed from the thickness direction. That is, the portion of the first surface 21a where multiple electrodes 23 are not formed when viewed from the thickness direction is covered by the surface cover portion 26. Furthermore, the surface cover portion 26 only needs to cover a portion of the portion of the first surface 21a of the substrate 21 where multiple electrodes 23 are not formed when viewed from the thickness direction. The surface cover portion 26 is a film covering the first surface 21a. The surface cover portion 26 protects wiring (not shown) provided on the first surface 21a. In this embodiment, the surface cover portion 26 is, for example, made of solder resist. The material constituting the surface cover portion 26, i.e., the material constituting the solder resist, has a relative tracking index of 600 or more. The relative tracking index of the material constituting the surface cover portion 26 is greater than the relative tracking index of the material constituting the substrate 21. Therefore, in each electrode pair 24, the creepage distance along the first surface 21a of the substrate 21 in the creepage distance between a pair of electrodes 23 can be shortened.

[0049] like Figure 1 As shown, the wiring portion 28 is a circuit pattern provided on the second surface 21c of the substrate 21. The wiring portion 28 is made of metal. In this embodiment, the wiring portion 28 is made of copper. The wiring portion 28 is electrically connected to each electrode 23 through through holes (not shown) provided on the substrate 21.

[0050] Chip 31 is mounted on the second surface 21c of substrate 21. More specifically, chip 31 is fixed to the second surface 21c by a bonding layer 33. The bonding layer 33 is composed of solder and sintering materials such as silver. In this embodiment, the bonding layer 33 is solder. Chip 31 includes, for example, a power element for power control. Chip 31 is made of semiconductor materials such as silicon, silicon carbide, and gallium nitride. A plurality of terminal portions 31a are provided on chip 31.

[0051] Multiple terminal portions 31a are respectively disposed on the surface of the chip 31 facing the surface side (-Z side). Each terminal portion 31a is made of metal. In this embodiment, each terminal portion 31a is made of aluminum.

[0052] The wire 35 electrically connects the terminal portion 31a to the wiring portion 28. The wire 35 is made of metals such as aluminum and copper. In this embodiment, the wire 35 is made of aluminum. The semiconductor device 10 includes a plurality of wires 35. One end of each wire 35 is connected to a different terminal portion 31a. The other end of each wire 35 is connected to the wiring portion 28. Thus, each wire 35 electrically connects the chip 31 to the wiring portion 28.

[0053] The sealing portion 37 covers the second surface 21c of the substrate 21, the wiring portion 28, the chip 31, and each wire 35. For example... Figure 2As shown, the sealing portion 37 is a generally cuboid shape protruding in the thickness direction of the plate. When viewed from the thickness direction, the sealing portion 37 is a generally rectangular shape with its long side extending along the second direction D2. The sealing portion 37 is made of an insulating resin. For example, the sealing portion 37 is made of a resin mainly comprising epoxy resin, bismaleimide resin, or cyanate ester resin. In this embodiment, the sealing portion 37 is made of epoxy resin. The sealing portion 37 protects the wiring portion 28, the chip 31, and each wire 35. Therefore, according to this embodiment, the stability of the operation of the semiconductor device 10 can be improved by the sealing portion 37.

[0054] like Figure 2 As shown, the side cover 29 is disposed in the first direction D1 between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a. In this embodiment, the side cover 29 is disposed inside the recess 22. The end of the side cover 29 on the back side (+Z side) is connected to the portion between the first electrode pair 24a in the surface cover 26. That is, the side cover 29 is connected to the portion between at least one electrode pair 24 in the surface cover 26. The end of the side cover 29 on the surface side (-Z side) is connected to the sealing portion 37. In this embodiment, the side cover 29 is part of the sealing portion 37. In this embodiment, the side cover 29 is made of epoxy resin. The side cover 29 may also be made of other resins such as bismaleimide resin or cyanate ester resin. The relative tracking index of the material constituting the side cover 29 is 600 or more. The relative tracking index of the material constituting the side cover 29 is greater than the relative tracking index of the material constituting the substrate 21. Therefore, compared with the configuration in which the side cover 29 is not provided in the recess 22, in the first electrode pair 24a, the creepage distance with the first side 21f as the path in the creepage distance between the pair of electrodes 23 can be shortened.

[0055] Furthermore, although the illustration is omitted, if the recess 22 does not open to the surface side (-Z side), the side cover 29 may not be connected to the sealing part 37. In this case, the side cover 29 and the sealing part 37 are independent components.

[0056] Although the illustration is omitted, when the recess 22 is not provided on the first side surface 21f, the side cover 29 is provided on the first side surface 21f. In this case, the end of the side cover 29 on the back side (+Z side) is connected to the portion between the first electrode pair 24a in the surface cover 26. Therefore, in the first electrode pair 24a, the creepage distance along the first side surface 21f in the creepage distance between a pair of electrodes 23 can be shortened. The end of the side cover 29 on the surface side (-Z side) can be connected to or not connected to the sealing part 37. That is, the side cover 29 can be part of the sealing part 37 or a component independent of the sealing part 37.

[0057] According to this embodiment, a recess 22 is provided on the side surface 21e, which is recessed in a direction orthogonal to the thickness direction and opens to the back side, i.e., the side surface covering 29 in the thickness direction, and the side surface covering 29 is disposed inside the recess 22. Therefore, compared with the case where the side surface covering 29 is provided on the first side surface 21f without providing the recess 22 on the side surface 21e, it is possible to suppress the increase in the size of the second direction D2 of the semiconductor device 10. Therefore, it is possible to more appropriately achieve miniaturization of the semiconductor device 10.

[0058] When multiple electrodes 23 and other components to which voltage is applied are formed on the substrate 21, the spacing between a pair of electrodes 23 constituting an electrode pair 24 needs to be wider than the creepage distance used to avoid faults caused by tracking. The creepage distance of each electrode pair 24 is determined by the potential difference between the potentials applied to the pair of electrodes 23, i.e., the potential difference, and the relative tracking index of the substrate 21 surface between the pair of electrodes 23. Figure 3 In the first electrode pair 24a shown, the paths where tracking may occur include a first path R1 along the first surface 21a of the substrate 21 and a second path R2 along the first side surface 21f of the substrate 21. As described above, the surface cover 26 covers the first surface 21a. Furthermore, the relative tracking index of the material constituting the surface cover 26 is greater than the relative tracking index of the material constituting the substrate 21. Therefore, in this embodiment, the first creepage distance in the first path R1 along the first surface 21a of the substrate 21 can be shortened.

[0059] Regarding the solder resist constituting the surface cover portion 26, products made of materials with a relatively high tracking index are widely circulated. Conversely, substrates 21 made of materials with a relatively low tracking index compared to the solder resist are widely circulated. Therefore, as in this embodiment, when using a substrate 21 with a relatively low tracking index, if multiple electrodes 23 are arranged along the edge of the substrate 21, the second creepage distance in the second path R2, with the side surface 21e of the substrate 21 as the path, tends to become longer than the first creepage distance. In contrast, in this embodiment, as described above, the material constituting the side cover portion 29 has a higher relatively tracking index than the material constituting the substrate 21. Furthermore, the side cover portion 29 is connected to the portion between the first electrode pair 24a in the surface cover portion 26. Therefore, in this embodiment, the second creepage distance in the second path R2 can be shortened by using the side cover portion 29. As described above, in this embodiment, the first creepage distance in the first path R1 can be shortened. Therefore, in this embodiment, the gap between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a can be narrowed.

[0060] In this embodiment, the potential difference between a pair of electrodes 23 constituting the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d is smaller than the potential difference between a pair of electrodes 23 constituting the first electrode pair 24a. Therefore, in this embodiment, even if the side covering portions 29 are not provided on the second side surface 21g, the third side surface 21h, and the fourth side surface 21j of the substrate 21, the creepage distance between a pair of electrodes 23 constituting the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d can be ensured. Furthermore, when the potential difference between the second electrode pair 24b, the third electrode pair 24c, and the fourth electrode pair 24d is large, by appropriately providing side covering portions on the second side surface 21g, the third side surface 21h, and the fourth side surface 21j, the second creepage distance in the second path along the side surface 21e of the substrate 21 can be shortened. As a result, the widening of the spacing between a pair of electrodes 23 can be suppressed.

[0061] Figure 4 This is a first top view showing the manufacturing process of the semiconductor device 10 according to this embodiment. Figure 5 This is a second top view showing the manufacturing process of the semiconductor device 10 in this embodiment. Figure 6This is a third top view showing the manufacturing process of the semiconductor device 10 according to this embodiment. Next, the manufacturing process of the semiconductor device 10 according to this embodiment will be described. The manufacturing process of the semiconductor device 10 includes a through-hole process P01, a sealing portion formation process P02, and a monolithization process P03. Furthermore, in the following description, "operators, etc." includes operators performing the operations of each process and assembly equipment, etc. The operations of each process may be performed by only an operator, only by an assembly equipment, or by both an operator and an assembly equipment.

[0062] The perforation process P01 is the process of perforating a through hole 1022 in the substrate 1021. In this embodiment, Figure 4 The substrate 1021 shown is a substrate in which six substrates 21 are connected, and the area of ​​the substrate 1021 is approximately six times the area of ​​the substrates 21. The substrate 1021 can be a substrate in which five or fewer substrates 21 are connected, or it can be a substrate in which seven or more substrates 21 are connected. When viewed from the thickness direction, the substrate 1021 is a generally rectangular shape with its long side extending along the first direction D1. Although not shown in the figure, after the operator mounts multiple chips 31 on the second surface of the substrate 1021, the operator connects the wires 35 to the terminal portions 31a and wiring portions 28 of each chip 31. Next, the operator forms multiple electrodes 23, 1023 on the first surface 1021a of the substrate 1021. The size of each electrode 23 formed on one side (+D2 side) and the other side (-D2 side) of the substrate 1021 in the second direction D2 is equal to the size of the electrode 23 of the semiconductor device 10. In the center of the substrate 1021 in the second direction D2, the size of each electrode 1023 arranged along the first direction D1 is the same as the size of the electrode 23 in the first direction D1, and the size of each electrode 1023 in the second direction D2 is about twice the size of the electrode 23 in the second direction D2.

[0063] Next, the operator applies a surface covering 1026 to the portion of the first surface 1021a where multiple electrodes 23, 1023 are not formed when viewed from the thickness direction. Thus, the portion of the first surface 1021a where multiple electrodes 23, 1023 are not formed when viewed from the thickness direction is covered by the surface covering 1026. Next, the operator drills a through-hole 1022 between a pair of electrodes 1023. The through-hole 1022 is a hole that penetrates the substrate 1021 along the thickness direction. When viewed from the thickness direction, the through-hole 1022 is approximately rectangular with its long side extending along the second direction D2. The through-hole 1022 opens to both the back side (+Z side) and the surface side (-Z side) of the substrate 1021 in the thickness direction. In this embodiment, the operator drills three through-holes 1022. If the operator drills through holes 1022, then the drilling process P01 is completed.

[0064] In the sealing part forming process P02, sealing parts 37 are formed respectively (see reference). Figure 1 The process of filling epoxy resin into the surface side (-Z side) of the substrate 1021 and the side cover portion 1029. Although not shown in the figure, the operator fills epoxy resin into the surface side (-Z side) of the substrate 1021. As a result, the plurality of chips 31 and wires 35 mounted on the second side of the substrate 1021 are covered by the sealing portion 37 (see figure). Figure 1 Furthermore, as described above, the through-hole 1022 opens to the surface side of the substrate 1021. Therefore, as... Figure 5 As shown, a portion of the epoxy resin flows into the interior of each through-hole 1022, filling the interior of each through-hole 1022 with the side cover portion 1029. Thus, although not shown in the diagram, the surface end of the side cover portion 1029 is connected to the sealing portion 37. That is, the side cover portion 1029 is connected to the sealing portion 37. Next, the operator heats the sealing portion 37 and the side cover portion 1029 separately in a heating furnace or the like, thereby curing the sealing portion 37 and the side cover portion 1029 separately. Once the operator has cured the sealing portion 37 and the side cover portion 1029 separately, the sealing portion forming process P02 is completed.

[0065] Monolithization process P03 is the process of dividing the substrate 1021 into multiple semiconductor devices 10. For example... Figure 6As shown, the operator monolithically prepares six semiconductor devices 10 by cutting the substrate 1021, each electrode 1023, each through hole 1022, and each side cover portion 1029. The operator cuts the substrate 1021, etc., using a cutting device (not shown) with blades. The operator may also cut the substrate 1021, etc., using other devices such as a laser cutting device. The cut electrodes 1023 constitute the first electrode 23a and the second electrode 23b in each semiconductor device 10. The cut through holes 1022 constitute the recesses 22 in each semiconductor device 10. The cut side cover portions 1029 constitute the side cover portions 29 in each semiconductor device 10. If the operator monolithically prepares each semiconductor device 10, the monolithization process P03 ends. If the monolithization process P03 ends, the manufacturing process of the semiconductor device 10 ends.

[0066] Furthermore, although the illustration is omitted, as described above, when the recess 22 does not open to the surface side (-Z side), the side cover 29 and the sealing part 37 are independent components. In this case, after the monolithic process P03 is completed, the operator can form the side cover 29 inside each recess 22 by filling the interior of each recess 22 with the side cover 29.

[0067] According to this embodiment, the semiconductor device 10 includes a sealing portion 37 covering the second surface 21c of the substrate 21, i.e., the side facing the thickness direction (-Z side), with a recess 22 opening to the surface side, and a side covering portion 29 connected to the sealing portion 37. Therefore, as described above, in the sealing portion forming process P02, when the resin constituting the sealing portion 37 is filled into the second surface of the substrate 1021, the side covering portion 1029 can be filled into the interior of each through hole 1022. That is, in the sealing portion forming process P02, the sealing portion 37 and the side covering portion 29 can be formed separately by the same filling operation. Therefore, compared with the case where the sealing portion 37 and the side covering portion 29 are formed separately by different filling operations, the increase in manufacturing time of the semiconductor device 10 can be suppressed.

[0068] According to this embodiment, the semiconductor device 10 includes: a substrate 21 having insulating properties; a plurality of electrodes 23 formed on a first surface 21a on the back side of the substrate 21, i.e., on the side facing the thickness direction (+Z side); and a side cover portion 29 covering at least a portion of a side surface 21e intersecting the first surface 21a on the outer surface of the substrate 21. The portion of the first surface 21a where the plurality of electrodes 23 are not formed when viewed from the thickness direction is covered by the surface cover portion 26. The plurality of electrodes 23 includes one or more electrode pairs 24 consisting of a pair of electrodes 23 arranged along the edge of the first surface 21a. The portion between the side cover portion 29 and at least one electrode pair 24 in the surface cover portion 26 is connected. The relative tracking index of the materials constituting the surface cover portion 26 and the materials constituting the side cover portion 29 is greater than the relative tracking index of the material constituting the substrate 21. Therefore, in the direction in which the pair of electrodes 23a and 23b constituting the electrode pair 24 are arranged, which is the first direction D1 in this embodiment, the side cover portion 29 is disposed between the pair of electrodes 23a and 23b, and the end of the back side of the side cover portion 29 is connected to the surface cover portion 26. Thus, as described above, compared to the case where the side cover portion 29 is not provided on the first side surface 21f, the second creepage distance in the second path R2 with the first side surface 21f of the substrate 21 as the path in the creepage distance between the pair of electrodes 23a and 23b can be shortened. Therefore, the interval between the pair of electrodes 23a and 23b constituting the electrode pair 24 can be narrowed, and the miniaturization of the semiconductor device 10 can be more appropriately achieved.

[0069] Furthermore, in this embodiment, as described above, the second creepage distance between the pair of electrodes 23a and 23b can be shortened by the side cover portion 29, thus suppressing the determination of the spacing between the pair of electrodes 23a and 23b based on the relative tracking index of the material constituting the substrate 21. This reduces the limitation on the options for the material constituting the substrate 21, thereby easily reducing the manufacturing cost of the substrate 21. Therefore, it is possible to suppress the increase in the manufacturing cost of the semiconductor device 10.

[0070] Furthermore, in this embodiment, as described above, the portion of the first surface 21a where the plurality of electrodes 23 are not formed when viewed from the thickness direction is covered by the surface covering portion 26. This shortens the first creepage distance in the first path R1 along the first surface 21a of the substrate 21 within the creepage distance between a pair of electrodes 23a and 23b. Therefore, the interval between a pair of electrodes 23a and 23b can be narrowed more appropriately, thus enabling more appropriate miniaturization of the semiconductor device 10.

[0071] (First variation)

[0072] Figure 7This is a perspective view showing a portion of the semiconductor device 110 of this modified example. In the semiconductor device 110 of this modified example, the dimensions of the first direction D1 of the recess 122 and the first direction D1 of the side cover 129 are both smaller than the first direction D1 interval between the first electrode 23a and the second electrode 23b. Furthermore, in the following description, the same reference numerals are used to denote components that are the same as those in the above-described embodiment, and their descriptions are omitted.

[0073] like Figure 7 As shown, the recess 122 in this modified example is a recessed pit in a direction orthogonal to the plate thickness direction. The recess 122 is recessed from the first side surface 21f to the other side (-D2 side) of the second direction D2. In this modified example, the recess 122 is open to both the back side (+Z side) and the surface side (-Z side). As described above, in this modified example, the dimension of the first direction D1 of the recess 122 is smaller than the first direction D1 interval between the first electrode 23a and the second electrode 23b. In this modified example, the end of the recess 122 on the other side (-D1 side) of the first direction D1 is located on the side (+D1 side) closer to the first electrode 23a than the first electrode 23a. The end of the recess 122 on one side of the first direction D1 is located on the other side (+D1 side) closer to the second electrode 23b than the second electrode 23b. Other configurations of the substrate 121 in the substrate portion 120 of this modified example are the same as other configurations of the substrate 21 in the substrate portion 20 of the above embodiment.

[0074] A side cover portion 129 is disposed in the first direction D1 between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a. The side cover portion 129 is disposed inside the recess 122. The end of the side cover portion 129 on the back side (+Z side) is connected to the portion between the first electrode pair 24a in the surface cover portion 26. That is, the side cover portion 129 is connected to the portion between at least one electrode pair 24 in the surface cover portion 26. The end of the side cover portion 129 on the surface side (-Z side) is connected to the sealing portion 37. The relative tracking index of the material constituting the side cover portion 129 is greater than the relative tracking index of the material constituting the substrate 121. Other configurations of the side cover portion 129 in this modified example are the same as other configurations of the side cover portion 29 in the above embodiment. Other configurations of the semiconductor device 110 in this modified example are the same as other configurations of the semiconductor device 10 in the above embodiment.

[0075] According to this variation, the portion between the side cover portion 129 and at least one electrode pair 24 in the surface cover portion 26 is connected, and the relative tracking index of the materials constituting the surface cover portion 26 and the side cover portion 129 is greater than the relative tracking index of the material constituting the substrate 121. Therefore, similarly to the embodiment described above, compared to the case where the side cover portion 129 is not provided on the first side surface 21f, the second creepage distance in the second path R2 with the first side surface 21f of the substrate 121 as the path in the creepage distance between the pair of electrodes 23a, 23b can be shortened. Therefore, the interval between the pair of electrodes 23a, 23b constituting the electrode pair 24 can be narrowed, and the miniaturization of the semiconductor device 110 can be more appropriately realized.

[0076] Furthermore, in this modified example, as described above, the dimension of the first direction D1 of the recess 122 is smaller than the spacing of the first direction D1 between the first electrode 23a and the second electrode 23b. Therefore, in the perforation process P01, the size of each through hole 1022 formed on the substrate 1021 can be reduced. This suppresses the increase in the operation time for perforating the substrate 1021, thereby reducing the manufacturing cost of the substrate 121. Therefore, it is possible to suppress the increase in the manufacturing cost of the semiconductor device 110.

[0077] Furthermore, in this modified example, as described above, the dimension of the first direction D1 of the side cover 129 is smaller than the distance D1 between the first electrode 23a and the second electrode 23b in the first direction. This makes it easier to reduce the volume of the side cover 129, thereby reducing its manufacturing cost. Therefore, it is possible to more appropriately suppress the increase in the manufacturing cost of the semiconductor device 110.

[0078] (Second variation)

[0079] Figure 8 This is a perspective view showing a portion of the semiconductor device 210 of this modified example. In the semiconductor device 210 of this modified example, the recess 222 does not open to the surface side (-Z side). That is, the thickness dimension of the recess 222 is smaller than the thickness dimension of the substrate 221. Furthermore, in the following description, the same reference numerals are used to denote components that are the same as those in the above-described embodiment, and their descriptions are omitted.

[0080] like Figure 8As shown, the recess 222 in this modified example is a recessed pit in a direction orthogonal to the thickness direction of the plate. The recess 222 is recessed from the first side surface 21f to the other side (-D2 side) of the second direction D2. In this modified example, the recess 222 is open only to the back side (+Z side) and not to the surface side (-Z side). Other configurations of the substrate 221 in the substrate portion 220 of this modified example are the same as other configurations of the substrate 21 in the substrate portion 20 of the above embodiment.

[0081] In this modified example, the side cover portion 229 is disposed in the first direction D1 between the first electrode 23a and the second electrode 23b constituting the first electrode pair 24a. The side cover portion 229 is disposed inside the recess 222. The end of the back side (+Z side) of the side cover portion 229 is connected to the portion between the first electrode pair 24a in the surface cover portion 26. That is, the side cover portion 229 is connected to the portion between at least one electrode pair 24 in the surface cover portion 26. The end of the surface side (-Z side) of the side cover portion 229 is not connected to the sealing portion 37. In this modified example, the end of the surface side of the side cover portion 229 is located closer to the surface side than the first surface 21a and closer to the back side than the second surface 21c. The thickness dimension of the side cover portion 229 is smaller than the thickness dimension of the substrate 221. The relative tracking index of the material constituting the side cover portion 229 is greater than the relative tracking index of the material constituting the substrate 221. The other configurations of the side cover portion 229 in this modified example are the same as those of the side cover portion 29 in the above embodiment. The other configurations of the semiconductor device 210 in this modified example are the same as those of the semiconductor device 10 in the above embodiment.

[0082] According to this modified example, the side cover portion 229 is partially connected to at least one electrode pair 24 in the surface cover portion 26. The end of the surface side (-Z side) of the side cover portion 229 is located closer to the surface side than the first surface 21a and closer to the back side (+Z side) than the second surface 21c. The relative tracking index of the materials constituting the surface cover portion 26 and the side cover portion 229 is greater than the relative tracking index of the material constituting the substrate 221. Therefore, the second path R2 of the creepage distance between the pair of electrodes 23a and 23b, with the first side surface 21f of the substrate 221 as the path, becomes a path that meanders along the outer periphery of the side cover portion 229 closer to the surface side than the side cover portion 229. Thus, compared to the case where the side cover portion 229 is not provided on the first side surface 21f, the second path R2 can be made longer than the interval in the first direction D1 between the pair of electrodes 23a and 23b. Therefore, even if the spacing of the first direction D1 between a pair of electrodes 23a and 23b is narrowed, the creepage distance between the pair of electrodes 23a and 23b can be easily ensured, thus enabling miniaturization of the semiconductor device 210.

[0083] Furthermore, in this modified example, as described above, the recess 222 does not open to the surface side (-Z side). Therefore, as described above, the thickness dimension of the recess 222 is smaller than the thickness dimension of the substrate 221. Therefore, in the through-hole process P01, the thickness dimension of each through-hole 1022 formed on the substrate 1021 can be reduced. As a result, the increase in the operation time for through-hole drilling on the substrate 1021 can be suppressed, thereby reducing the manufacturing cost of the substrate 221. Therefore, the increase in the manufacturing cost of the semiconductor device 210 can be suppressed.

[0084] Furthermore, in this modified example, as described above, the thickness dimension of the side cover portion 229 is smaller than the thickness dimension of the substrate 221. This makes it easier to reduce the volume of the side cover portion 229, thereby lowering its manufacturing cost. Therefore, it is possible to more appropriately suppress the increase in manufacturing cost of the semiconductor device 210.

[0085] (Third variation)

[0086] Figure 9 This is a perspective view showing the semiconductor device 310 of this modified example. The semiconductor device 310 of this modified example includes a plurality of side cover portions 29, 329a. Furthermore, in the following description, the same reference numerals are used to denote components that are the same as those in the above-described embodiment, and their descriptions are omitted.

[0087] like Figure 9 As shown, in this modified example, a plurality of recesses 22 and 322a are provided on the side 21e. The configuration of the recesses 22 in this modified example is the same as that of the recesses 22 in the above-described embodiment.

[0088] The recess 322a is a recessed area in a direction orthogonal to the plate thickness direction. The recess 322a is recessed from the third side surface 21h towards the other side (-D1 side) of the first direction D1. When viewed from the first direction D1, the recess 322a is approximately rectangular in shape with its long side extending along the second direction D2. In this modified example, the recess 322a is open on both the back side (+Z side) and the surface side (-Z side). In the second direction D2, the recess 322a is disposed between the second electrode 23b and the fourth electrode 23d. That is, the recess 322a is disposed on the side (-D2 side) of the second direction D2 closer to the second electrode 23b, and on the side (+D2 side) of the second direction D2 closer to the fourth electrode 23d. The end of the recess 322a on the second direction D2 side may also be located on the side of the second direction D2 closer to the second direction D2 side than the end of the second electrode 23b on the other side (-D2 side). The end of the recess 322a on the other side of the second direction D2 may also be located on the other side of the second direction D2 than the end of the fourth electrode 23d on one side of the second direction D2. Other configurations of the substrate 321 in the substrate portion 320 of this modified example are the same as other configurations of the substrate 21 in the substrate portion 20 of the above embodiment.

[0089] In this modified example, the semiconductor device 310 includes multiple side cover portions 29 and 329a. The semiconductor device 310 includes two side cover portions 29 and 329a. The configuration of the side cover portion 29 in this modified example is the same as that of the side cover portion 29 in the above-described embodiment.

[0090] Side cover portion 329a is disposed inside recess 322a. Side cover portion 329a is disposed in the second direction D2 between the second electrode 23b and the fourth electrode 23d constituting the fourth electrode pair 24d. The end of the back side (+Z side) of side cover portion 329a is connected to the portion between the fourth electrode pair 24d in surface cover portion 26. That is, the side cover portion 329a is connected to the portion between at least one electrode pair 24 in surface cover portion 26. Thus, multiple side cover portions 29, 329a are each connected to the portion between different electrode pairs 24 in surface cover portion 26. In this modified example, the end of the surface side (-Z side) of side cover portion 329a is connected to sealing portion 37. Side cover portion 329a is part of sealing portion 37. The relative tracking index of the material constituting each side cover portion 29, 329a is greater than the relative tracking index of the material constituting substrate 321. The other configurations of the side cover portions 29 and 329a in this modified example are the same as those of the side cover portion 29 in the above embodiment. The other configurations of the semiconductor device 310 in this modified example are the same as those of the semiconductor device 10 in the above embodiment.

[0091] In this modified example, the potential difference between the pair of electrodes 23 constituting the first electrode pair 24a and the fourth electrode pair 24d is greater than the potential difference between the pair of electrodes 23 constituting the second electrode pair 24b and the third electrode pair 24c. Therefore, in this modified example, by providing a side cover portion 29 on the first side surface 21f of the substrate 321, the second creepage distance in the second path R2 with the first side surface 21f of the substrate 321, in the creepage distance between the pair of electrodes 23a and 23b, can be shortened, similar to the embodiment described above. Furthermore, in this modified example, by providing a side cover portion 329a on the third side surface 21h of the substrate 321, the second creepage distance in the second path R302 with the third side surface 21h of the substrate 321, in the creepage distance between the pair of electrodes 23b and 23d, can be shortened. As a result, the interval between the pair of electrodes 23a and 23b and the interval between the pair of electrodes 23b and 23d can be narrowed respectively.

[0092] According to this modification, the semiconductor device 310 includes a plurality of side cover portions 29 and 329a, and a plurality of electrodes 23 including a plurality of electrode pairs 24. The plurality of side cover portions 29 and 329a are respectively connected to portions between different electrode pairs 24 in the surface cover portion 26. Therefore, as described above, even if the interval between a pair of electrodes 23a and 23b and the interval between a pair of electrodes 23b and 23d are narrowed respectively, the creepage distance between a pair of electrodes 23a and 23b and the creepage distance between a pair of electrodes 23b and 23d can be ensured respectively, thus enabling miniaturization of the semiconductor device 310.

[0093] (Fourth variation)

[0094] Figure 10 This is a perspective view showing the semiconductor device 410 of this modified example. In the semiconductor device 410 of this modified example, solder balls 440 are respectively mounted on a plurality of electrodes 23. Furthermore, in the following description, the same reference numerals are used to denote components that are the same as those in the above-described embodiment, and their descriptions are omitted.

[0095] like Figure 10 As shown, in this modified example, solder balls 440 are respectively mounted on multiple electrodes 23. Each solder ball 440 is conductive. In this embodiment, each solder ball 440 is made of a metallic material such as copper, silver, or tin. Each solder ball 440, together with an external terminal of an external power supply (not shown), is heated and melted, thereby tightly fixing each electrode 23 to the external terminal via the solder balls 440. This ensures a stable electrical connection between each electrode 23 and the external terminal. Therefore, the operational stability of the semiconductor device 410 can be improved.

[0096] Furthermore, in this modified example, similar to the first embodiment described above, the portion between at least one electrode pair 24 in the side cover portion 29 and the surface cover portion 26 is connected, and the relative tracking index of the materials constituting the surface cover portion 26 and the side cover portion 29 is greater than the relative tracking index of the material constituting the substrate 21. Therefore, the second creepage distance in the second path R2 with the first side surface 21f of the substrate 21 as the path in the creepage distance between the pair of electrodes 23a, 23b can be shortened. Therefore, the interval between the pair of electrodes 23a, 23b constituting the electrode pair 24 can be narrowed, so the miniaturization of the semiconductor device 10 can be appropriately realized.

[0097] According to at least one embodiment described above, a side cover portion having a portion connected to at least one electrode pair in the surface cover portion and having a relative tracking index greater than that of the material constituting the substrate can be provided, thereby enabling the provision of a miniaturized semiconductor device.

[0098] While several embodiments of the invention have been described, these embodiments are provided by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the scope of the invention and its equivalents as described in the claims.

Claims

1. A semiconductor device, characterized in that, have: The substrate is insulating; Multiple electrodes are formed on a first surface of the substrate facing the thickness direction; as well as The side cover covers at least a portion of the outer surface of the substrate that intersects with the first surface. The portion of the first surface where no plurality of electrodes are formed when viewed from the thickness direction of the plate is covered by the surface covering portion. The plurality of electrodes includes one or more electrode pairs consisting of a pair of electrodes arranged along the edge of the first surface. The side cover portion is connected to the portion between at least one of the electrode pairs in the surface cover portion. The relative tracking index of the materials constituting the surface cover and the side cover is greater than that of the material constituting the substrate.

2. The semiconductor device according to claim 1, characterized in that, A recess is provided on the side that is recessed in a direction orthogonal to the plate thickness direction and opens to one side in the plate thickness direction. The side cover is disposed inside the recess.

3. The semiconductor device according to claim 2, characterized in that, It includes a sealing portion that covers a second surface of the substrate facing the opposite side in the thickness direction. The recess opens to the other side in the direction of plate thickness. The side cover is connected to the sealing part.

4. The semiconductor device according to claim 1, characterized in that, The plurality of electrodes are plate-shaped structures that extend in a direction orthogonal to the thickness direction of the plate.

5. The semiconductor device according to claim 1, characterized in that, Solder balls are mounted on each of the plurality of electrodes.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that, It has multiple side coverings, The plurality of electrodes includes the plurality of electrode pairs. Each of the multiple side covering portions is connected to a portion between different electrode pairs in the surface covering portion.

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