Manufacturing method of package substrate, package substrate and electronic device
By setting a connecting layer and forming a buffer gap in the TGV hole of the glass substrate, the problem of microcracks caused by different coefficients of thermal expansion is solved, ensuring product quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-19
- Publication Date
- 2026-03-13
AI Technical Summary
The difference in thermal expansion coefficients between the TGV holes and the metal filler material in the glass substrate can easily induce microcracks at the hole opening, affecting product quality.
A connecting layer is set inside the TGV hole, and a buffer gap is formed near the hole opening. The buffer gap is formed by spray etching technology to avoid the metal pillar directly causing thermal expansion and compression to the glass interface.
It effectively buffers the thermal expansion of the metal column, avoids the generation of micro-cracks at the orifice, and ensures product quality.
Smart Images
Figure CN121666090A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor packaging technology, and in particular to a method for manufacturing a packaging substrate, the packaging substrate, and an electronic device. Background Technology
[0002] Chip packaging substrates provide electrical connections, protection, support, heat dissipation, and assembly functions for chips, enabling multi-pin configurations, reduced package size, improved electrical performance and heat dissipation, ultra-high density, or multi-chip modularization. As a result, packaging substrates are widely used in high-end demand fields such as automotive displays, optical communications, quantum computing, and AI chip packaging.
[0003] In related technologies, the packaging substrate includes a glass substrate, and conductivity between devices is achieved by filling TGV vias with metal and forming a circuit layer on the surface of the glass substrate. However, stress problems exist in glass substrate integration, mainly due to the difference in thermal expansion coefficients between the filling metal material and the glass substrate. The two ends of the TGV vias are the areas of highest stress concentration. High stress can easily induce microcracks at the via openings, and these microcracks will gradually propagate under subsequent mechanical loads, eventually leading to cracking of the glass substrate and seriously affecting product quality. Summary of the Invention
[0004] This application proposes a method for manufacturing a packaging substrate to solve the problem that microcracks are easily induced at the orifice position due to the difference in thermal expansion coefficients between the TGV holes and the metal filler material in the glass substrate.
[0005] To achieve the above objectives, this application adopts the following technical solution: In a first aspect, a method for manufacturing a packaging substrate is provided, comprising: A glass substrate is provided, the glass substrate having TGV holes; A connecting layer is provided inside the TGV hole. The connecting layer has opposite outer sidewalls and inner sidewalls, and the outer sidewalls are connected to the inner surface of the TGV hole. The TGV holes are filled to form metal pillars, which are then connected to the inner wall of the connecting layer. The connecting layer near the TGV hole is removed to form a buffer gap.
[0006] Furthermore, the step of removing the portion of the connecting layer near the TGV aperture to form a buffer gap includes: A buffer gap is formed by etching the connecting layer using a spray etching technique.
[0007] Furthermore, the step of filling the TGV hole to form a metal pillar includes: A metal material is deposited onto the glass substrate so that the metal material adheres to the TGV holes and the surface of the glass substrate. The metal material on the surface of the glass substrate is removed, while the metal material inside the TGV hole is retained to form a metal pillar.
[0008] Furthermore, the end surface of the metal pillar is flush with the surface of the glass substrate.
[0009] Secondly, this application also provides a packaging substrate, comprising: Glass substrate, the glass substrate has TGV holes; A metal post set inside the TGV bore; and A connecting layer is provided between the TGV hole and the metal post, and the metal post is connected to the inner surface of the TGV hole through the connecting layer; The end of the connecting layer is lower than the opening of the TGV hole to form a buffer gap between the TGV hole and the metal pillar.
[0010] Furthermore, the depth of the buffer gap is 30µm to 70µm.
[0011] Furthermore, the thickness of the connecting layer ranges from 150 nm to 250 nm.
[0012] Furthermore, the end surface of the metal pillar is flush with the surface of the glass substrate.
[0013] Furthermore, the packaging substrate also includes circuit patterns disposed on one or both surfaces of the glass substrate, and the circuit patterns are connected to metal pillars.
[0014] Furthermore, the material of the connecting layer includes at least one or more of titanium, titanium compounds, tantalum, tantalum compounds, tin, and aluminum.
[0015] Thirdly, this application also provides an electronic device, including the packaging substrate as described above.
[0016] The beneficial effects of this application are as follows: The method for manufacturing a packaging substrate provided in this application includes providing a glass substrate having TGV holes; disposing a connecting layer within the TGV holes, the connecting layer having opposing outer and inner sidewalls, the outer sidewalls being connected to the inner surface of the TGV holes; filling the TGV holes to form metal pillars, the metal pillars being connected to the inner sidewalls of the connecting layer; and removing a portion of the connecting layer near the opening of the TGV holes to form a buffer gap. By forming a buffer gap between the opening of the TGV holes and the metal pillars, the metal pillars are buffered when thermally expanded, preventing direct thermal expansion and compression of the glass interface at the opening of the TGV holes. This avoids microcracks at the opening of the TGV holes due to large stress, ensuring product quality. Attached Figure Description
[0017] Figure 1A schematic flowchart illustrating a method for fabricating a packaging substrate, provided as an embodiment of this application; Figure 2 A schematic diagram of the process of electroplating metal pillars into a packaging substrate according to an embodiment of this application; Figure 3 A schematic flowchart illustrating a method for fabricating a packaging substrate by etching to form a buffer gap portion, provided for an embodiment of this application; Figure 4 A schematic diagram of the structure of a glass substrate for an encapsulation substrate provided in one embodiment of this application; Figure 5 A schematic diagram of a packaging substrate with a connection layer provided in one embodiment of this application; Figure 6 A schematic diagram of the structure of a packaging substrate circuit metal material is provided for one embodiment of this application; Figure 7 A schematic diagram of a structure for removing surface metal material from a packaging substrate, as provided in one embodiment of this application; Figure 8 A schematic diagram of a packaging substrate forming a buffer gap portion is provided as an embodiment of this application; Figure 9 for Figure 8 Enlarged schematic diagram of part A1 in the diagram.
[0018] Explanation of reference numerals in the attached figures: 100-Glass substrate, 110-TGV hole, 200-Metal pillar, 300-Connecting layer, 310-Buffer gap. Detailed Implementation
[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. Examples of embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining this application and are not intended to limit this application.
[0020] In the description of this application, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0023] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0024] The following disclosure provides numerous different embodiments or examples for implementing various structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference values and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0025] The method for fabricating a packaging substrate provided in this application includes providing a glass substrate having TGV holes; forming a connecting layer within the TGV holes, the connecting layer having opposing outer and inner sidewalls, the outer sidewalls being connected to the inner surface of the TGV holes; filling the TGV holes to form metal pillars, the metal pillars being connected to the inner sidewalls of the connecting layer; and removing a portion of the connecting layer near the opening of the TGV holes to form a buffer gap. By forming a buffer gap between the opening of the TGV holes and the metal pillars, the metal pillars are buffered when thermally expanded, preventing direct thermal expansion and compression of the glass interface at the opening of the TGV holes. This avoids microcracks at the opening of the TGV holes due to large stress, ensuring product quality.
[0026] Example 1 like Figure 1 As shown, one embodiment of this application provides a method for manufacturing a packaging substrate, including: S1100, a glass substrate 100 is provided, the glass substrate 100 having a TGV hole 110; The glass substrate 100 can be made of borosilicate glass, quartz glass, or other types of glass. During implementation, due to the excellent hardness and flatness of the glass material, it can provide a stable substrate for circuits or chips; that is, the glass substrate 100 plays a structural support role in the packaging substrate.
[0027] The glass substrate 100 has several TGV (Through Glass Via) holes, such as... Figure 4 As shown. The TGV via 110 is mainly used in 2.5D / 3D advanced packaging. It uses laser processing to form through-holes of different shapes to achieve vertical interconnection between circuits and chips.
[0028] Optionally, the TGV via 110 includes vertical through-holes, X-type through-holes, blind vias, V-type through-holes, or holes of other shapes and structures. Vertical through-holes are through-holes that penetrate the glass substrate 100, suitable for vertical interconnects in 3D packaging. X-type through-holes have a cross-shaped structure, effectively enhancing the uniformity of electroplating filling. Blind vias are holes that only partially penetrate the substrate, commonly used in 2.5D packaging. V-type through-holes are tapered holes, facilitating subsequent metal filling. In some embodiments, the TGV hole 110 is formed primarily through techniques such as laser processing, chemical etching, or electrical discharge machining.
[0029] Alternatively, laser processing, namely laser-induced selective etching (LISE), uses femtosecond or picosecond high-energy lasers to form nano-pits on the glass surface, and enlarges the aperture through chemical etching (such as KOH solution) to achieve high-precision, low-damage through-hole processing. Alternatively, laser drilling refers to forming through holes directly on the glass substrate 100 using a laser. The holes are mostly conical and require flipping the substrate for processing twice.
[0030] Alternatively, electrical discharge machining (EDM) technology utilizes high voltage and current to locally heat the glass substrate 100, forming through holes through the Joule effect, which is suitable for machining holes with high aspect ratio.
[0031] Optionally, chemical etching assistance refers to further enlarging the aperture or adjusting the shape through chemical etching after laser or electrical discharge machining. For example, the TGV structure of borosilicate glass needs to be combined with nano-pit etching. In some possible embodiments, the locations on the glass substrate 100 where the TGV holes 110 need to be formed can be first subjected to laser modification treatment. Laser modification is a method of surface treatment of a glass substrate using laser technology, aimed at improving the performance of the glass or giving it new functions. This method has many advantages, including high processing precision, no thermal damage, and high processing efficiency.
[0032] The laser-treated glass substrate is then placed in a hydrofluoric acid solution for etching. The etching rate of the modified glass in hydrofluoric acid is faster than that of the unmodified glass, in order to form TGV holes 110.
[0033] S1200, A connecting layer 300 is provided inside the TGV hole 110. The connecting layer 300 has opposite outer sidewalls and inner sidewalls. The outer sidewalls are connected to the inner surface of the TGV hole 110. The connecting layer 300 can be formed in the TGV hole 110 by means of CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), PCVD (Plasma Chemical Vapor Deposition), etc., without limitation.
[0034] Optionally, CVD refers to the process of introducing vapors of gaseous or liquid reactants containing elements constituting the thin film, as well as other gases required for the reaction, into a reaction chamber to generate a thin film through a chemical reaction on the surface of a substrate (glass substrate 100).
[0035] PVD refers to a technology that uses physical methods under vacuum conditions to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionize them into ions, and then deposits a thin film with a special function on the surface of a substrate (glass substrate 100) through a low-pressure gas (or plasma) process.
[0036] PCVD is a technique that uses plasma to activate reactive gases, promoting chemical reactions on or near the surface of a substrate (glass substrate 100) to generate a solid film.
[0037] It is understandable that the bonding layer formed on the inner wall of the TGV pore can be a film layer that surrounds the TGV pore wall, or it can be a film layer that surrounds part or multiple parts of the pore wall.
[0038] Optionally, the connecting layer 300 may be made of at least one of titanium (Ti), titanium compounds (e.g., TiW, TiN), tantalum (Ta), tantalum compounds (e.g., TaN, TiW), tin, aluminum, or other materials, without limitation.
[0039] The connecting layer 300 is a hollow cylindrical shape, wherein the outer wall of the connecting layer 300 is connected to the inner surface of the TGV hole 110 as follows: Figure 5 As shown. In some embodiments, the outer wall of the connecting layer 300 can be a complete surface or an incomplete surface. For example, when the connecting layer 300 is prepared using an electroplating process, there may be some pits or breaks on the outer wall of the connecting layer 300 due to bubbles or other reasons. That is to say, the connecting layer 300 may be discontinuous in some places.
[0040] In some possible embodiments, when the interconnect layer 300 is formed, some of the material of the interconnect layer 300 may be attached to the surface of the glass substrate 100. After the interconnect layer 300 is formed, the material attached to the surface of the glass substrate 100 can be removed to ensure the surface flatness of the glass substrate 100, and at the same time to avoid short circuits when a metal layer or circuit is formed on the surface of the glass substrate 100 in the future.
[0041] S1300, filling TGV holes 110 to form metal pillars 200, the metal pillars 200 are connected to the inner wall of the connecting layer 300; In practice, the metal pillar 200 can also be made by CVD, PVD, PCVD or electroplating. It can be regarded as filling the hollow internal space of the connecting layer 300 with metal material to make the metal pillar 200. For example, electroplating copper, aluminum, tin, silver and other metal materials with conductive properties will not be elaborated.
[0042] It is understandable that electroplating is the process of depositing a thin layer of other metals or alloys on the surface of certain substrates (glass substrate 100) using the principle of electrolysis. It is a process of using electrolysis to attach a metal film to the surface of metal or other material parts.
[0043] In some possible embodiments, such as Figure 2 As shown, the steps for filling the TGV hole 110 to form the metal pillar 200 include: S1310. Deposit a metal material onto the glass substrate 100 so that the metal material is attached to the TGV hole 110 and the surface of the glass substrate 100. S1320: Remove the metal material from the surface of the glass substrate 100, and retain the metal material inside the TGV hole 110 to form a metal pillar 200.
[0044] Metal material is deposited onto the glass substrate 100 by electroplating. The metal material adheres completely to the glass substrate 100; that is, metal material is deposited on both the surface of the glass substrate 100 and inside the TGV holes 110. Figure 6 As shown. At this time, the material of the metal pillars 200 attached to the surface of the glass substrate 100 can be removed, for example, by CMP (chemical mechanical polishing). CMP removes the material of the metal pillars 200 on the surface of the glass substrate 100. CMP achieves surface planarization of the glass substrate 100 through the synergistic effect of chemical etching and mechanical polishing. After CMP treatment, the metal material in the TGV hole 110 is retained, thus forming the metal pillars 200, as shown. Figure 7 As shown.
[0045] S1400, Remove part of the connecting layer 300 near the orifice of the TGV hole 110 to form a buffer gap 310.
[0046] After the metal pillar 200 is fabricated and processed by CMP, the end surfaces of the metal pillar 200 and the connecting layer 300 are flush with the surface of the glass substrate 100. Figure 7 As shown. At this time, the portion of the connecting layer 300 near the orifice of the TGV hole 110 can be removed to form an annular groove. That is, in the region near the orifice of the TGV hole 110, there is no connecting layer 300 between the metal pillar 200 and the inner surface of the TGV hole 110. This annular groove is the buffer gap 310, as shown. Figure 8 and Figure 9 As shown.
[0047] Optionally, such as Figure 3 As shown, the step of removing a portion of the connecting layer 300 near the opening of the TGV hole 110 to form a buffer gap 310 includes: S1410, The connecting layer 300 is etched using spray etching technology to form a buffer gap 310.
[0048] Spray etching is a process that uses a spray device to uniformly spray etching solution onto the surface of a workpiece to achieve selective corrosion. By using spray etching technology to spray the bonding layer 300, the glass substrate 100 is made to uniformly contact the etching solution, thereby rapidly and uniformly etching the bonding layer 300 at the edge of the TGV hole 110.
[0049] Alternatively, the spray etching technology can also employ vertical multi-point spray etching technology. After the connecting layer 300 at the edge of the TGV hole 110 is etched, the chemical solution enters the glass interface between the metal pillar 200 and the TGV hole 110. Through vertical multi-point spraying, the new chemical solution is rapidly exchanged with the old chemical solution that has reacted with the connecting layer 300, thereby rapidly continuing to etch the connecting layer 300 in the TGV hole 110, achieving a deep etching effect, and thus creating a buffer gap 310.
[0050] Alternatively, the etching solution can be a solution that can etch away the bonding layer but not the metal pillars and glass substrate.
[0051] In some embodiments, taking titanium as an example for the connecting layer 300, titanium is an active metal, and a passivation film (TiO2) forms on its surface. The etching solution can be an acidic etching solution for titanium. The acidic solution dissolves the passivation film on the surface of the titanium metal through a chemical reaction. After the acidic solution destroys the passivation film, the internal metal is exposed and reacts with the solution. Because the acidic etching solution for titanium is highly controllable, the etching depth of the titanium layer at the glass interface between the metal pillar 200 in the TGV hole 110 and the TGV hole 110 can be precisely controlled by adjusting the reaction time between the solution and titanium.
[0052] When the connecting layer is titanium and the metal pillar is metal When etching copper, the etching solution for titanium can be hydrogen peroxide-ammonia solution (H2O2-NH4OH-H2O), citric acid solution, etc.
[0053] The method for manufacturing a packaging substrate provided in this application includes providing a glass substrate 100 having a TGV hole 110; disposing a connecting layer 300 within the TGV hole 110, the connecting layer 300 having opposing outer and inner sidewalls, the outer sidewalls being connected to the inner surface of the TGV hole 110; filling the TGV hole 110 to form a metal pillar 200, the metal pillar 200 being connected to the inner sidewall of the connecting layer 300; and removing a portion of the connecting layer 300 near the opening of the TGV hole 110 to form a buffer gap 310. By forming a buffer gap 310 between the opening of the TGV hole 110 and the metal pillar 200, the metal pillar 200 is buffered when it expands due to heat, preventing direct thermal expansion and compression of the glass interface at the opening of the TGV hole 110, thus avoiding microcracks at the opening of the TGV hole 110 due to large stress and ensuring product quality.
[0054] In some embodiments, such as Figure 8 As shown, this application also provides a packaging substrate, comprising: Glass substrate 100, glass substrate 100 having TGV hole 110; Metal post 200 set in TGV hole 110; and A connecting layer 300 is provided between the TGV hole 110 and the metal post 200, and the metal post 200 is connected to the inner surface of the TGV hole 110 through the connecting layer 300. The end of the connecting layer 300 is lower than the opening of the TGV hole 110 to form a buffer gap 310 between the TGV hole 110 and the metal pillar 200.
[0055] The glass substrate 100 can be made of borosilicate glass, quartz glass or other types of glass. For details, please refer to the glass substrate 100 in the above embodiment, which will not be described in detail.
[0056] The glass substrate 100 is provided with several TGV holes 110. The TGV holes 110 are mainly used for vertical interconnection between the circuits and chips of each layer in the 2.5D / 3D advanced packaging substrate.
[0057] Metal pillar 200 refers to a conductive structure, such as a copper pillar, tin pillar, or iron pillar, that fills the TGV hole 110. It is used to connect the circuits or chips on one or both surfaces of the glass substrate 100.
[0058] The connecting layer 300 is disposed between the metal post 200 and the TGV hole 110, that is, the metal post 200 is connected to the TGV hole 110 through the connecting layer 300.
[0059] Optionally, the thickness of the interconnect layer 300 can range from 150nm to 250nm. For example, the thickness of the interconnect layer 300 can be designed to be any value among 160nm, 170nm, 180nm, 190nm, 200nm, 210nm, 220nm, 230nm, 240nm or 150nm to 250nm, without limitation.
[0060] In practice, a connecting layer 300 can be first set in the TGV hole 110 by means of PVD, PCVD or electroplating, and then the glass substrate 100 is electroplated to form a metal pillar 200 in the TGV hole 110. At this time, the connecting layer 300 is located between the metal pillar 200 and the TGV hole 110.
[0061] After the metal pillars 200 are formed by electroplating, some of the metal pillar material will adhere to the surface of the glass substrate 100. At this point, the metal material on the surface of the glass substrate 100 can be removed by processes such as CMP. After the CMP process, the end surface of the metal pillars 200 is flush with the surface of the glass substrate 100, which facilitates subsequent processes such as photolithography and micro-bump bonding, avoids short circuits or open circuits, and ensures the reliability of electrical connections with circuits or chips.
[0062] After the CMP process, the end surface of the connecting layer 300 is flush with the surface of the glass substrate 100. At this time, the connecting layer in the TGV hole is exposed. The part of the connecting layer 300 near the opening of the TGV hole 110 can be removed by means of chemical etching or mechanical polishing to form a gap. After removal, the end of the connecting layer 300 is lower than the opening of the TGV hole 110. This gap is formed in the buffer gap 310 between the TGV hole 110 and the metal pillar 200.
[0063] It is understandable that, such as Figure 8 The structure shown can be a glass interposer in the packaging substrate; when the packaging substrate is formed by stacking multiple glass substrates, the above structure can be any layer in the packaging substrate. Other structures in the packaging substrate, such as RDL lines on the glass surface, are not shown in the prior art. The RDL lines are connected to the metal pillars 200.
[0064] The method for manufacturing a packaging substrate provided in this application includes providing a glass substrate 100 having a TGV hole 110; forming a connecting layer 300 within the TGV hole 110, the connecting layer 300 having opposing outer and inner sidewalls, the outer sidewalls being connected to the inner surface of the TGV hole 110; filling the TGV hole 110 to form a metal pillar 200, the metal pillar 200 being connected to the inner sidewall of the connecting layer 300; and removing a portion of the connecting layer 300 near the opening of the TGV hole 110 to form a buffer gap 310. By forming a buffer gap 310 between the opening of the TGV hole 110 and the metal pillar 200, the metal pillar 200 is buffered when it expands due to heat, preventing direct thermal expansion and compression of the glass interface at the opening of the TGV hole 110, thus avoiding microcracks at the opening of the TGV hole 110 due to stress and ensuring product quality.
[0065] In some embodiments, the depth of the buffer gap 310 is 30µm to 70µm. For example, the depth of the buffer gap 310 can be designed to be any value among 35µm, 40µm, 45µm, 50µm, 55µm, 60µm, 65µm, or 30µm to 70µm, without limitation. With the above setting, when the metal pillar 200 expands due to heat, the area inside the TGV hole 110 that is farther from the hole opening than the depth of the buffer gap 310 will be subjected to the thermal expansion stress of the metal pillar 200, which can effectively ensure that no microcracks will be generated at the hole opening of the TGV hole 110.
[0066] In practice, the circuit pattern is a conductive pattern layer disposed on the surface of the glass substrate 100 to realize the circuit connection function, such as electrical connection with chips, various components or other circuit patterns, thereby realizing the corresponding function.
[0067] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the structure and implementation principle of the electronic device described above can be referred to the corresponding structure and implementation principle in the foregoing embodiments, and will not be repeated here.
[0068] The method for manufacturing a packaging substrate provided in this application includes providing a glass substrate 100 having a TGV hole 110; forming a connecting layer 300 within the TGV hole 110, the connecting layer 300 having opposing outer and inner sidewalls, the outer sidewalls being connected to the inner surface of the TGV hole 110; filling the TGV hole 110 to form a metal pillar 200, the metal pillar 200 being connected to the inner sidewall of the connecting layer 300; and removing a portion of the connecting layer 300 near the opening of the TGV hole 110 to form a buffer gap 310. By forming a buffer gap 310 between the opening of the TGV hole 110 and the metal pillar 200, the metal pillar 200 is buffered when it expands due to heat, preventing direct thermal expansion and compression of the glass interface at the opening of the TGV hole 110, thus avoiding microcracks at the opening of the TGV hole 110 due to stress and ensuring product quality.
[0069] This application also provides an electronic device, including the packaging substrate as described above.
[0070] When implemented, electronic devices include, but are not limited to, mobile terminals, desktop computers, medical devices, wearable devices, in-vehicle devices, VR / AR devices, other consumer electronics products, aerospace equipment, etc.
[0071] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for manufacturing a packaging substrate, characterized in that, include: A glass substrate is provided, the glass substrate having TGV holes; A connecting layer is provided inside the TGV hole. The connecting layer has opposing outer sidewalls and inner sidewalls, and the outer sidewalls are connected to the inner surface of the TGV hole. The TGV holes are filled to form metal pillars, which are connected to the inner sidewall of the connecting layer. The portion of the connecting layer near the orifice of the TGV hole is removed to form a buffer gap.
2. The manufacturing method according to claim 1, characterized in that, The step of removing the portion of the connecting layer near the orifice of the TGV hole to form a buffer gap includes: The buffer gap is formed by etching the connecting layer using a spray etching technique.
3. The manufacturing method according to claim 1, characterized in that, The step of filling the TGV hole to form a metal pillar includes: A metal material is deposited onto the glass substrate so that the metal material adheres to the TGV hole and the surface of the glass substrate. The metal material on the surface of the glass substrate is removed, while the metal material inside the TGV hole is retained to form the metal pillar.
4. The manufacturing method according to any one of claims 1 to 3, characterized in that, The end surface of the metal pillar is flush with the surface of the glass substrate.
5. A packaging substrate, characterized in that, include: A glass substrate having TGV holes; A metal post disposed within the TGV hole; as well as A connecting layer is disposed between the TGV hole and the metal post, and the metal post is connected to the inner surface of the TGV hole through the connecting layer; The end of the connecting layer is lower than the opening of the TGV hole to form a buffer gap between the TGV hole and the metal pillar.
6. The packaging substrate according to claim 5, characterized in that, The depth of the buffer gap is 30µm to 70µm.
7. The packaging substrate according to claim 5, characterized in that, The thickness of the connecting layer ranges from 150 nm to 250 nm.
8. The packaging substrate according to any one of claims 5 to 7, characterized in that, The end surface of the metal pillar is flush with the surface of the glass substrate.
9. The packaging substrate according to claim 8, characterized in that, The packaging substrate also includes a circuit pattern disposed on one or both surfaces of the glass substrate, the circuit pattern being connected to the metal pillar.
10. The packaging substrate according to claim 1, characterized in that, The material of the connecting layer includes at least one or more of titanium, titanium compounds, tantalum, tantalum compounds, tin, and aluminum.
11. An electronic device, characterized in that, Includes the packaging substrate as described in any one of claims 5-9.