Cleaning method and cleaning device

Abstract

The invention discloses a cleaning method and a cleaning device. The cleaning method comprises the steps that a polishing pad is placed in a cleaning chamber; the polishing pad is provided with a polishing surface, the cleaning chamber is provided with a first side wall and a second side wall which are oppositely arranged, the inner wall of the first side wall can be movably connected with the polishing pad, and the second side wall is slidably connected with a nozzle; controlling the polishing surface to face the nozzle, and controlling the polishing pad to rotate; a nozzle is controlled to release water flow and is controlled to ascend and descend in the vertical direction so as to clean the polishing pad in the rotating state; and the nozzles in the vertical lifting state are controlled to release airflow so as to blow-dry the polishing pad in the rotating state. According to the cleaning method, the nozzles in the vertical lifting state can conduct adaptive full-automatic and all-directional cleaning and blow-drying on the polished surface in the rotating state at different positions, the situation that the polished surface is missed in cleaning or uneven in drying is avoided as much as possible, and the cleaning effect and the drying effect on the polished surface are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a cleaning method and apparatus for polishing pads. Background Technology

[0002] Polishing pad cleaning is an indispensable and crucial step in the semiconductor crystal polishing process, directly determining the surface quality and processing stability of the crystal. During polishing, grinding debris, residual polishing fluid, and chemical reaction products easily adhere to the pores and surface of the polishing pad. If not cleaned in time, this can lead to pad clogging and surface morphology deterioration, not only reducing polishing efficiency but also causing scratches and increased roughness on the crystal surface.

[0003] Currently, polishing pad cleaning mainly uses semi-automatic water washing or brushing methods. By manually adjusting the position of the polishing pad, it is easy to miss some areas during cleaning. In addition, secondary pollution can occur during the cleaning process, resulting in poor cleaning effect and seriously affecting the quality of the crystal after polishing. Moreover, current cleaning devices do not take into account the drying of the polishing pad after cleaning.

[0004] This invention provides a novel cleaning method and cleaning apparatus for solving at least one of the above-mentioned problems. Summary of the Invention

[0005] The purpose of this invention is to solve at least one of the technical problems in the background art mentioned above, and to provide a cleaning method and cleaning device. By controlling the nozzle to rise and fall in the vertical direction, and controlling the nozzle to release water flow to clean the polishing pad in the rotating state and release air flow to clean the polishing pad in the rotating state respectively, the nozzle can clean and dry the polishing pad in the rotating state at different positions, so as to achieve full coverage automatic cleaning and drying of the polishing pad, especially the polished surface.

[0006] The objective of this invention is achieved through the following technical solution:

[0007] A first aspect of the present invention provides a cleaning method, comprising:

[0008] A polishing pad is placed in a cleaning chamber; wherein the polishing pad has a polishing surface, the cleaning chamber has a first sidewall and a second sidewall disposed opposite to each other, the inner wall of the first sidewall is movably connected to the polishing pad, and the second sidewall is slidably connected to a nozzle.

[0009] Control the polishing surface to face the nozzle, and control the polishing pad to rotate;

[0010] Control the nozzles to release water flow and control the nozzles to rise and fall vertically to clean the polishing pad that is rotating.

[0011] Control the nozzle in the vertical lifting state to release airflow to dry the polishing pad in the above rotating state.

[0012] The beneficial effects of this invention are as follows: the nozzle in the vertical lifting state can adaptively and automatically clean and dry the polished surface in the rotating state from different positions, avoiding the occurrence of missed cleaning or uneven drying of the polished surface as much as possible, improving the cleaning and drying effect of the polished surface, avoiding uneven curing degree in different areas of the polished surface due to uneven drying, resulting in uneven hardness, preventing local pressure differences during polishing, and preventing scratches or inconsistent gloss on the surface of the crystal to be polished, thus helping to improve the quality of the crystal to be polished.

[0013] In some feasible embodiments, the bottom wall of the cleaning chamber is further provided with an ultrasonic generator located below the polishing pad. After controlling the nozzle to release water flow and controlling the nozzle to rise and fall vertically to clean the rotating polishing pad, the cleaning method further includes:

[0014] The distance between the nozzle and the polishing surface is controlled to a first preset distance, and the polishing pad stops rotating and the nozzle stops rising and falling.

[0015] The polishing surface is controlled to face the bottom wall of the cleaning chamber, and the nozzle is controlled to release water flow into the cleaning chamber at a first preset water pressure until the polishing pad is submerged.

[0016] The ultrasonic generator is controlled to emit ultrasonic waves in water that is submerged in the polishing pad to clean the polishing pad for a first preset time.

[0017] It also includes at least one of the following:

[0018] The aforementioned first preset distance is 120mm to 150mm;

[0019] The aforementioned first preset water pressure is 2 bar to 3 bar;

[0020] The first preset time is 3 min to 5 min.

[0021] The power of the ultrasonic generators mentioned above ranges from 100W to 500W.

[0022] In some feasible implementations, the above-described control of the nozzle to release water flow and control of the nozzle to move up and down in the vertical direction to clean the polishing pad in a rotating state includes:

[0023] The distance between the nozzle and the polishing surface is controlled to a second preset distance;

[0024] The nozzle, which controls the vertical lifting state, releases water at a second preset water pressure to clean the polishing pad, which is in the above-mentioned rotating state, for a second preset time.

[0025] The distance between the nozzle and the polishing surface is controlled to a third preset distance;

[0026] The nozzle, which controls the vertical lifting state, releases water at a third preset water pressure to clean the polishing pad, which is in the above-mentioned rotating state, for a third preset time.

[0027] Wherein, the third preset distance is greater than the second preset distance, the third preset water pressure is greater than the second preset water pressure, and the third preset time is greater than the second preset time;

[0028] It also includes at least one of the following:

[0029] The aforementioned second preset distance is 5mm to 10mm;

[0030] The aforementioned third preset distance is 10mm to 20mm;

[0031] The aforementioned second preset water pressure is 10 bar to 20 bar;

[0032] The aforementioned third preset water pressure is 80 bar to 120 bar;

[0033] The second preset time mentioned above is 5 min to 10 min;

[0034] The aforementioned third preset time is 10 min to 15 min;

[0035] When the nozzle releases water at the second preset water pressure, the lifting speed of the nozzle is 100 mm / min to 200 mm / min, and the rotation speed of the polishing pad is 60 rad / min to 80 rad / min.

[0036] When the nozzle releases water at the third preset water pressure, the lifting speed of the nozzle is 50 mm / min to 100 mm / min, and the rotation speed of the polishing pad is 80 rad / min to 100 rad / min.

[0037] In some feasible implementations, controlling the nozzle in the vertical lifting state to release airflow to dry the polishing pad in the rotating state includes:

[0038] The distance between the nozzle and the polishing surface is controlled to a fourth preset distance;

[0039] The nozzle, which controls the vertical lifting state, releases airflow at a preset air pressure to blow and dry the polishing pad in the above-mentioned rotating state for a fourth preset time.

[0040] It also includes at least one of the following:

[0041] The aforementioned fourth preset distance is 1mm to 5mm;

[0042] The preset air pressure is 80 bar to 120 bar.

[0043] The aforementioned fourth preset time is 10 min to 15 min;

[0044] When the above-mentioned nozzle releases airflow at a preset air pressure, the lifting speed of the above-mentioned nozzle is 30 mm / min to 50 mm / min.

[0045] The rotational speed of the polishing pad is 100 rad / min to 250 rad / min.

[0046] In some feasible embodiments, the cleaning chamber is provided with a water-air piping assembly for controlling the water flow released from the nozzles and controlling the airflow released from the nozzles; the water-air piping assembly includes:

[0047] An air pump has an air outlet and an air inlet connected together, and the air inlet of the air pump is connected to an air source.

[0048] A water pump has a liquid outlet and a liquid inlet connected together, and the liquid inlet of the water pump is connected to a water source.

[0049] The first branch has a first end and a second end that are connected, and the second end of each of the first branches is connected to the nozzle.

[0050] The first pipeline has a first end and a second end that are connected together. The first end of the first pipeline is connected to the air outlet of the air pump, and the second end of the first pipeline is connected to the first end of the first branch.

[0051] The second pipeline has a first end and a second end that are connected together. The first end of the second pipeline is connected to the air outlet of the water pump, and the second end of the second pipeline is connected to the first end of the first branch.

[0052] A pressure valve is provided at the second end of the first pipeline, the second end of the second pipeline, and the first end of the first branch.

[0053] The above cleaning methods include at least one of the following:

[0054] The above-mentioned control of the nozzle to release water flow at a first preset water pressure includes:

[0055] Turn on the water pump, turn off the air pump, and adjust the outlet pressure of the pressure valve to the first preset water pressure so that the nozzle releases water at the first preset water pressure.

[0056] The above-mentioned nozzle controlling the above-mentioned lifting state to release water flow at a second preset water pressure includes:

[0057] Turn on the water pump, turn off the air pump, and adjust the outlet pressure of the pressure valve to the second preset water pressure so that the nozzle releases water at the second preset water pressure.

[0058] The nozzle controlling the above-mentioned lifting state releases water flow at a third preset water pressure, including:

[0059] Turn on the water pump and the air pump, and adjust the outlet pressure of the pressure valve to the third preset water pressure so that the nozzle releases water at the third preset water pressure.

[0060] The above-mentioned nozzle, which controls the above-mentioned lifting state, releases water flow at a preset air pressure, including:

[0061] Turn off the water pump, turn on the air pump, and adjust the outlet pressure of the pressure valve to the preset air pressure so that the nozzle releases airflow at the preset air pressure.

[0062] In some feasible implementations, a drive mechanism is provided outside the cleaning chamber, and the drive mechanism is slidably connected to a nozzle inside the cleaning chamber. The drive mechanism is used to drive the nozzle to move so as to change the position of the nozzle relative to the polishing surface.

[0063] The aforementioned drive mechanism includes:

[0064] A horizontal drive mechanism, the output end of which is connected to the nozzle in the cleaning chamber, is used to drive the nozzle to move horizontally, thereby changing the position of the nozzle relative to the polishing surface.

[0065] The above cleaning methods include at least one of the following:

[0066] The above-mentioned control of the distance between the nozzle and the polishing surface to the first preset distance includes:

[0067] The above-mentioned horizontal drive mechanism is used to drive the nozzle to move horizontally so that the distance between the nozzle and the polishing surface is a first preset distance.

[0068] The above-mentioned control of the distance between the nozzle and the polishing surface to the second preset distance includes:

[0069] The above-mentioned horizontal drive mechanism is used to drive the nozzle to move horizontally so that the distance between the nozzle and the polishing surface is a second preset distance.

[0070] The aforementioned control of the distance between the nozzle and the polishing surface to the third preset distance includes:

[0071] The above-mentioned horizontal drive mechanism is used to drive the nozzle to move horizontally so that the distance between the nozzle and the polishing surface is a third preset distance.

[0072] The above-mentioned control of the distance between the nozzle and the polishing surface as the fourth preset distance includes:

[0073] The above-mentioned horizontal drive mechanism is used to drive the nozzle to move horizontally so that the distance between the nozzle and the polishing surface is a fourth preset distance.

[0074] In some feasible embodiments, the drive mechanism further includes a vertical lifting mechanism, the output end of which is connected to the horizontal drive mechanism for driving the horizontal drive mechanism to move vertically; the cleaning method further includes:

[0075] The vertical lifting mechanism is used to drive the horizontal drive mechanism to perform continuous reciprocating lifting and lowering movements, so that the nozzle follows the horizontal drive mechanism in a continuous reciprocating lifting and lowering state.

[0076] In some feasible embodiments, an adjustment assembly is fixedly connected to the inner wall of the second sidewall of the cleaning chamber. This adjustment assembly is movably connected to the polishing pad and configured to adjust the orientation of the polishing surface. The adjustment assembly includes a dual-axis servo motor, the output of which is configured to connect to the polishing pad for changing the orientation of the polishing surface. The cleaning method further includes:

[0077] The polishing pad is moved by the aforementioned dual-axis servo motor to change the orientation of the polishing surface.

[0078] In some feasible implementations, the adjustment assembly further includes a rotation mechanism, the output of which is connected to the dual-axis servo motor; the cleaning method further includes:

[0079] The aforementioned rotating mechanism drives the aforementioned dual-axis servo motor to perform continuous reciprocating rotational motion, so that the aforementioned polishing pad is in a continuous reciprocating rotational state.

[0080] In a second aspect, the present invention provides a cleaning apparatus comprising a cleaning chamber, a nozzle, and a control device, wherein a polishing pad is disposed in the cleaning chamber; wherein the polishing pad has a polishing surface, and the cleaning chamber has a first sidewall and a second sidewall disposed opposite to each other, the first sidewall of the cleaning chamber being movably connected to the polishing pad, and the second sidewall being slidably connected to the nozzle;

[0081] The control device is configured to: control the polishing surface to face the nozzle and control the polishing pad to rotate; control the nozzle to release water flow and control the nozzle to move up and down in the vertical direction to clean the polishing pad in the rotating state; control the nozzle in the up-and-down moving state to release airflow to dry the polishing pad in the rotating state. Attached Figure Description

[0082] Figure 1 This is a schematic diagram of the overall structure of the cleaning device provided by the present invention; in the figure, the polishing pad is in a vertical position and the polishing surface faces the spraying mechanism;

[0083] Figure 2 This is a schematic diagram of the overall structure of the cleaning device provided by the present invention; in the figure, the polishing pad is in a horizontal state and the polishing surface faces the bottom wall of the cleaning chamber;

[0084] Figure 3 This is a schematic diagram of the water and air pipeline assembly in the cleaning device provided by the present invention.

[0085] Figure 4 This is a schematic diagram of the steps of the cleaning method provided by the present invention.

[0086] In the diagram: 100, cleaning chamber; 101, first side wall; 102, second side wall; 102a, first guide channel; 102b, second guide channel; 103, water inlet; 104, vent; 200, control chamber; 300, polishing pad; 301, polishing surface; 1, adjustment assembly; 11, rotation mechanism; 12, dual-axis servo motor; 2, drive assembly; 21, vertical lifting mechanism; 22, horizontal drive mechanism; 3, jetting mechanism; 41, housing; 42, first spring; 43, second spring; 44, first guide plate; 45, second guide plate; 51, air pump; 52, water pump; 53, first branch; 54, first pipeline; 55, second pipeline; 56, pressure control device. Detailed Implementation

[0087] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided to make the invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore repeated descriptions of them will be omitted.

[0088] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection via an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0089] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the drawings, and are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0090] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or display that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or display.

[0091] See appendix Figure 1 and 2 As shown, the present invention provides a cleaning device, which includes a cleaning chamber 100, a nozzle 3, and a control device.

[0092] The cleaning chamber 100 can be configured as at least one, for example, Figure 1 and Figure 2 Taking two cleaning chambers 100 as an example, the number of cleaning chambers 100 can be set according to application needs, such as 1, 2 or 3, to adjust the cleaning efficiency.

[0093] A polishing pad 300 to be cleaned is placed in the cleaning chamber 100. The polishing pad 300 has a polishing surface 301.

[0094] The cleaning chamber 100 has a first side wall 101 and a second side wall 102, which are arranged opposite to each other. The first side wall 101 of the cleaning chamber 100 is movably connected to the polishing pad 300, and the second side wall 102 is slidably connected to the nozzle 3.

[0095] The control device is configured to: control the polishing surface 301 to face the nozzle 3 and control the polishing pad 300 to rotate; control the nozzle 3 to release water flow and control the nozzle 3 to move up and down in the vertical direction to clean the polishing pad 300 in the rotating state; control the nozzle 3 in the up-and-down moving state to release airflow to dry the polishing pad 300 in the rotating state.

[0096] The control device includes at least an adjustment component 1 and a drive component 2.

[0097] The adjustment component 1 is disposed in the cleaning chamber 100 (the first side wall 101 of the cleaning chamber 100 is detachably and fixedly connected to the adjustment component 1) and is movably connected to the polishing pad 300. The adjustment component 1 is configured to adjust the position and orientation of the polishing pad 300 in the cleaning chamber 100 to change the orientation of the polishing surface 301.

[0098] In one feasible implementation, the adjusting component 1 is detachably and fixedly connected to the polishing pad 300. It is understood that the above is merely an example, and in practical applications, the connection method between the adjusting component 1 and the polishing pad 300 is not limited to this.

[0099] Nozzle 3 is disposed within cleaning chamber 100 and faces polishing pad 300. Nozzle 3 is configured to release water flow to clean polishing surface 301 and to release airflow to dry polishing surface 301. It can be understood that nozzle 3 releases water flow to clean polishing surface 301 facing it and releases airflow to dry polishing surface 301 facing it.

[0100] In one example, such as Figure 1 As shown, when the polishing surface 301 faces the nozzle 3, the polishing surface 301 of the polishing pad 300 is in a vertical state. When the polishing surface 301 is in a vertical state, the abrasive that falls off the polishing surface 301 will flow directly down with the cleaning fluid under the action of gravity, and will not accumulate on the polishing pad 300, thus avoiding secondary pollution.

[0101] Preferably, a brush can be installed at the outlet of the water flow from the nozzle 3. The brush can simultaneously contact the polishing pad 300 while the water flow is cleaning, and remove residual abrasives and deposits in the pores through physical friction. Combined with the flushing and carrying effect of the water flow, efficient cleaning is achieved.

[0102] The drive assembly 2 is connected to the nozzle 3 in each cleaning chamber 100. The drive assembly 2 is used to drive the nozzle 3 to move, so as to change the position of the nozzle 3 relative to the polishing pad 300.

[0103] This cleaning device connects the polishing pad 300 to the adjustment component 1. The adjustment component 1 can adjust the position of the polishing pad 300 in the cleaning chamber 100. Since the drive component 2 is connected to the nozzle 3, the drive component 2 can drive the nozzle 3 to move, changing the position of the nozzle 3 relative to the polishing surface 301. In this way, the nozzle 3 can perform adaptive fully automatic cleaning and drying of the polishing pad 300 in different positions and postures, minimizing the occurrence of missed cleaning or uneven drying of the polishing pad 300, and improving the cleaning and drying effect of the polishing pad 300. In particular, when the adjustment component 1 is used to change the orientation of the polishing surface 301 of the polishing pad 300 to face the nozzle 3, the polishing surface 301 can be continuously and thoroughly cleaned and dried, allowing the polishing surface 301 to be cleaned and dried from all angles. This further improves the cleaning effect of the polishing surface 301, while avoiding uneven drying of the polishing surface 301, which can lead to different degrees of curing in different areas and uneven hardness. This also prevents local pressure differences during polishing, which can cause scratches or inconsistent gloss on the surface of the crystal to be polished, thus helping to improve the quality of the crystal to be polished. ‌

[0104] As a specific embodiment of the drive assembly 2, the drive assembly 2 includes at least one horizontal drive mechanism 22 located outside the cleaning chamber 100 and a vertical lifting mechanism 21 located outside the cleaning chamber 100. For example, there are two horizontal drive mechanisms 22, which may be electric push rods, and the vertical lifting mechanism 21 may be a lifting platform.

[0105] The output end of each horizontal drive mechanism 22 is connected to the nozzle 3 in each cleaning chamber 100. The horizontal drive mechanism 22 is used to drive the nozzle 3 to move horizontally, so as to change the position of the nozzle 3 relative to the polishing pad 300.

[0106] The output end of the vertical lifting mechanism 21 is connected to each horizontal drive mechanism 22. The vertical lifting mechanism 21 is used to drive the horizontal drive mechanism 22 to move in the vertical direction.

[0107] Since the output end of the horizontal drive mechanism 22 is connected to the nozzle 3 in each cleaning chamber 100, the horizontal drive mechanism 22 can drive the nozzle 3 to move horizontally, thereby changing the position of the nozzle 3 relative to the polishing pad 300 in the horizontal direction. Since the output end of the vertical lifting mechanism 21 is connected to each horizontal drive mechanism 22, the vertical lifting mechanism 21 can drive the horizontal drive mechanism 22 to move vertically, thereby changing the position of the nozzle 3 relative to the polishing pad 300 in the vertical direction. Therefore, by using the horizontal drive mechanism 22 and the vertical lifting mechanism 21 of the drive assembly 2, the position of the nozzle 3 in the horizontal and vertical directions can be changed, thereby realizing the adjustment of the position of the nozzle 3 relative to the polishing pad 300, especially the polishing surface 301.

[0108] The horizontal drive mechanism 22 drives the nozzle 3 to move in the horizontal direction, which can adaptively adjust its position relative to the polishing pad 300 in the horizontal direction, so as to achieve adaptive cleaning and drying of the polishing pad 300, especially the polishing surface 301, by the nozzle 3 in the horizontal direction; the vertical lifting mechanism 21 drives the nozzle 3 to move in the vertical direction, which can adaptively adjust its position relative to the polishing pad 300 in the vertical direction.

[0109] It is worth noting that the vertical lifting mechanism 21 is also configured to drive the horizontal drive mechanism 22 to move vertically, so that the polishing pad 300 follows the horizontal drive mechanism 22 in a continuous reciprocating lifting state. This allows the nozzle 3 to achieve full vertical coverage cleaning and drying of the polishing pad 300, especially the polishing surface 301.

[0110] As a specific implementation of the adjustment component 1, the adjustment component 1 includes a rotation mechanism 11 and a dual-axis servo motor 12.

[0111] The rotating mechanism 11 is disposed within the cleaning chamber 100. For example, the cleaning chamber 100 has opposing first sidewalls 101 and second sidewalls 102, and the rotating mechanism 11 is connected to the inner wall surface of the first sidewall 101. For example, the rotating mechanism 11 may be a rotary motor.

[0112] The dual-axis servo motor 12 is connected to the output end of the rotating mechanism 11. The output end of the dual-axis servo motor 12 is configured to be connected to the polishing pad 300. The dual-axis servo motor 12 is used to adjust the orientation of the polishing surface 301.

[0113] The position of the polishing pad 300 within the cleaning chamber 100 can be adjusted using the rotation mechanism 11 and the dual-axis servo motor 12 of the adjustment component 1, thereby changing the orientation of the polishing surface 301.

[0114] Since the dual-axis servo motor 12 is connected to the output end of the rotating mechanism 11, the rotating mechanism 11 of the adjustment component 1 can drive the polishing pad 300 to rotate synchronously with the dual-axis servo motor 12, thereby enhancing the full coverage cleaning and drying of the polishing pad 300 by the nozzle 3. Since the output end of the dual-axis servo motor 12 is configured to be connected to the polishing pad 300, the orientation of the polishing surface 301 can be adjusted by the dual-axis servo motor 12 so that the polishing surface 301 faces the nozzle 3, thereby enhancing the full coverage cleaning and drying of the polishing surface 301 by the nozzle 3.

[0115] Furthermore, the adjusting component 1 is also configured to drive the polishing pad 300 to rotate, so that the polishing pad 300 is in a continuous rotating state. Specifically, the rotating mechanism 11 of the adjusting component 1 can drive the polishing pad 300 to rotate, so that the polishing pad 300 is in a continuous rotating state.

[0116] In one feasible embodiment, the cleaning device further includes a control chamber 200, which shares the same sidewall with each cleaning chamber 100. The sidewall has a through groove (not shown in the figure) extending through the sidewall in the thickness direction (horizontal direction). The sidewall also has a first guide channel 102a and a second guide channel 102b that are opposite each other in the height direction (vertical direction) and respectively extend through the through groove. For example, this sidewall is the aforementioned second sidewall 102.

[0117] The nozzle 3 can move along the thickness direction in the barrel groove under the drive of the horizontal drive mechanism 22, and the nozzle 3 can move in the through groove in the direction (vertical direction) toward the first guide channel 102a or the second guide channel 102b under the drive of the vertical lifting mechanism 21.

[0118] The cleaning device also includes a guide assembly disposed in the control room 200. The guide assembly includes a housing 41 adapted to the through groove, a first spring 42, a second spring 43, a first guide plate 44 adapted to the first guide channel 102a, and a second guide plate 45 adapted to the second guide channel 102b.

[0119] It should be noted that the first guide plate 44 and the second guide plate 45 are respectively adapted to the through groove.

[0120] The housing 41 has a first side and a second side opposite to each other along the height direction, and the nozzle 3 is embedded in the housing 41.

[0121] For example, the nozzle 3 is adapted to be embedded in the housing 41 and is slidably connected to the housing 41.

[0122] The first spring 42 is embedded in the first guide channel 102a, and one end of the first spring 42 is in contact with the inner wall of the first guide channel 102a. The first guide plate 44 is embedded in the first guide channel 102a, one end of the first guide plate 44 is connected to the first side of the housing 41, and the other end of the first guide plate 44 is in contact with the other end of the first spring 42.

[0123] The second spring 43 is embedded in the second guide channel 102b, and one end of the second spring 43 is in contact with the inner wall of the second guide channel 102b. The second guide plate 45 is embedded in the second guide channel 102b, one end of the second guide plate 45 is connected to the second side of the housing 41, and the other end of the second guide plate 45 is in contact with the other end of the second spring 43.

[0124] Driven by the horizontal drive mechanism 22 within the control chamber 200, nozzle 3 slides horizontally within the housing 41, thereby changing its horizontal position relative to the polishing pad 300. Driven by the vertical lifting mechanism 21 within the control chamber 200, nozzle 3 moves synchronously up and down with the guidance of the guide assembly, following the horizontal drive mechanism 22, thereby changing its vertical position relative to the polishing pad 300. Specifically:

[0125] When the vertical lifting mechanism 21 drives the horizontal drive mechanism 22 to rise vertically, the nozzle 3 drives the housing 41 to rise synchronously with the horizontal drive mechanism 22. Since the first side of the housing 41 is connected to the first guide plate 44, the first guide plate 44 will compress the first spring 42 in the first guide channel 102a under the action of the lifting force. The first spring 42 will apply a directional force to the first guide plate 44. At the same time, since the second side of the housing 41 is connected to the second guide plate 45, the second guide plate 45 will rise synchronously with the housing 41. The second spring 43 will apply a reverse force to the second guide plate 45, forming a bidirectional buffer.

[0126] When the vertical lifting mechanism 21 drives the horizontal drive mechanism 22 to descend vertically, the nozzle 3 drives the housing 41 to descend synchronously with the horizontal drive mechanism 22. Since the second side of the housing 41 is connected to the second guide plate 45, the second guide plate 45 will compress the second spring 43 in the second guide channel 102b under the action of the descent force. The second spring 43 will apply a directional force to the second guide plate 45. At the same time, since the first side of the housing 41 is connected to the first guide plate 44, the first guide plate 44 will descend synchronously with the housing 41. The first spring 42 will apply a reverse force to the first guide plate 44, forming a bidirectional buffer.

[0127] The first spring 42 and the first guide plate 44 in the first guide channel 102a, and the second spring 43 and the second guide plate 45 in the second guide channel 102b, achieve bidirectional buffering through linkage, reducing the impact of the nozzle 3 during movement and ensuring that the nozzle 3 can move stably in the vertical direction.

[0128] It should be noted that, regardless of whether the nozzle 3 rises or falls, the first guide plate 44 is always embedded in the first guide channel 102a, and the second guide plate 45 is always embedded in the second guide channel 102b, thereby achieving a seal in the first guide channel 102a and the second guide channel 102b, preventing water vapor from entering the control chamber 200 from the cleaning chamber 300.

[0129] Preferably, the drive assembly 2 is located inside the control room 200.

[0130] The guide assembly not only enables stable movement of the nozzle 3 in both horizontal and vertical directions, but also provides physical isolation between the drive assembly 2 in the control chamber 200 and the nozzle 3 in the cleaning chamber 100. This is because the adaptation design between the guide assembly and the second side wall 102 shared by the control chamber 200 and the cleaning chamber 100, as well as the adaptation design between the guide assembly and the nozzle 3, effectively blocks water vapor and contaminants generated by the nozzle 3 when cleaning the polishing pad 300 in the cleaning chamber 100. This prevents water vapor and contaminants from entering the control chamber 200 and contaminating the drive assembly 2, ensuring the cleanliness of the drive assembly 2 and achieving stable control of the nozzle 3.

[0131] In one feasible implementation, see Appendix Figure 3 As shown, the cleaning device also includes a water-air pipeline assembly located in the control room 200. The water-air pipeline assembly includes an air pump 51, a water pump 52, at least one first branch 53, a first pipeline 54, and a second pipeline 55. For example, there are two first branches 53.

[0132] The air pump 51 has an air outlet and an air inlet connected together, and the air inlet of the air pump 51 is connected to an air source.

[0133] The water pump 52 has a liquid outlet and a liquid inlet connected together, and the liquid inlet of the water pump 52 is connected to a water source.

[0134] It's worth noting that "water source" is not limited to its literal meaning; specifically, it refers to the cleaning fluid used to clean the polishing pad 300. The cleaning fluid can be water or other liquid substances, and the water source can be a cleaning fluid with a certain temperature. "Air source" refers to air, which can also be at a certain temperature.

[0135] The first branch 53 has a first end and a second end that are connected, and the second end of each first branch 53 is connected to each nozzle 3.

[0136] The first pipe 54 has a first end and a second end that are connected together. The first end of the first pipe 54 is connected to the air outlet of the air pump 51, and the second end of the first pipe 54 is connected to the first end of the first branch 53.

[0137] The second pipe 55 has a first end and a second end that are connected. The first end of the second pipe 55 is connected to the air outlet of the water pump 52, and the second end of the second pipe 55 is connected to the first end of the first branch 53.

[0138] By turning on the water pump 52 and turning off the air pump 51, the cleaning fluid in the water source enters the nozzle 3 through the second pipe 55 and the first branch pipe 53 under the drive of the water pump 52, allowing the nozzle 3 to release a low-pressure water flow. The exemplary low-pressure water flow pressure is 10 bar to 20 bar, for example, it can be 10 bar, 11 bar, 12 bar, 13 bar, 14 bar, 15 bar, 16 bar, 17 bar, 18 bar, 19 bar or 20 bar.

[0139] By turning on the water pump 52 and the air pump 51, the cleaning liquid in the water source enters the nozzle 3 through the second pipe 55 and the first branch pipe 53, and the air in the air source enters the nozzle 3 through the first pipe 54 and the first branch pipe 53, allowing the nozzle 3 to release high-pressure water vapor. For example, the pressure of the high-pressure water vapor is 80 bar to 120 bar, such as 80 bar, 85 bar, 90 bar, 95 bar, 100 bar, 105 bar, 110 bar, 115 bar, or 120 bar.

[0140] Understandably, the water and air pipeline assembly can be used to sequentially perform low-pressure water flow cleaning and high-pressure water and air rinsing on the polishing surface 301 of the polishing pad 300.

[0141] Compared to low-pressure water flow, which is difficult to remove stubborn contaminants, high-pressure water flow has a greater impact on the polishing pad 300 and is more likely to damage the polishing surface 301. This cleaning device uses low-pressure water flow to remove the polishing liquid on the polishing pad 300, and uses high-pressure water vapor to impact the surface and pores of the polishing pad 300, gently removing stubborn contaminants. This not only improves the cleaning effect, but also minimizes damage to the polishing surface 301.

[0142] By turning off the water pump 52 and turning on the air pump 51, air from the air source enters the nozzle 3 through the first pipe 54 and the first branch 53, allowing the nozzle 3 to release airflow. For example, the airflow pressure is 80 bar to 120 bar, such as 80 bar, 85 bar, 90 bar, 95 bar, 100 bar, 105 bar, 110 bar, 115 bar, or 120 bar.

[0143] Furthermore, the cleaning device also includes a pressure control device 56, which is disposed at the second end of the first pipeline 54, the second end of the second pipeline 55, and the first end of the first branch 53.

[0144] For example, pressure control device 56 may be a pressure valve used to control the pressure of water flow, air flow and water vapor.

[0145] It is understandable that the second end of the second pipeline 55 is connected to the first end of the first branch 53 through the pressure control device 56, and the second end of the first pipeline 54 is connected to the first end of the first branch 53 through the pressure control device 56.

[0146] The pressure control device 56 can adaptively adjust the pressure of the water flow, air flow and water vapor released by the nozzle 3 to achieve better cleaning and drying of the polishing pad 300.

[0147] Furthermore, a control valve (not shown in the figure) can be provided for the pressure control device 56, which can be adjusted to open or close the pressure control device 56.

[0148] Due to the adaptive design between the guide assembly and the second side wall 102 shared by the control chamber 200 and the cleaning chamber 100, as well as the adaptive design between the guide assembly and the nozzle 3, it is possible to effectively block water vapor and contaminants generated by the nozzle 3 when cleaning the polishing pad 300 in the cleaning chamber 100. This prevents water vapor and contaminants from entering the control chamber 200 and causing contamination to the water and air pipeline assembly, ensuring the cleanliness of the water and air pipeline assembly, and thus achieving stable control of the nozzle 3.

[0149] In one feasible embodiment, the nozzle 3 is also configured to release water flow into the cleaning chamber 100 so that the water in the cleaning chamber 100 can submerge the polishing pad 300; the cleaning chamber 100 is also provided with an ultrasonic generator located below the polishing pad 300. Exemplarily, the ultrasonic generator (not shown) is disposed on the bottom wall of the cleaning chamber 100.

[0150] For example, by turning on the water pump 52 and turning off the air pump 51, the cleaning fluid in the water source enters the nozzle 3 through the second pipe 55 and the first branch pipe 53 under the drive of the water pump 52, so that the nozzle 3 can release a low-pressure water flow. The pressure of the water flow released by the nozzle 3 into the cleaning chamber 100 is 2 bar to 3 bar, for example, 2 bar, 2.5 bar or 3 bar. Since the purpose is to allow the water flow to fill the cleaning chamber 100 and immerse the polishing pad 300, a large impact force of the water flow is not required, so the pressure is relatively small.

[0151] When the polished surface 301 faces the bottom wall of the cleaning chamber 100, the ultrasonic generator is configured to generate ultrasonic waves to perform ultrasonic cleaning on the polished surface 301.

[0152] An ultrasonic generator can produce ultrasonic vibrations. These ultrasonic vibrations create cavitation in the water in the cleaning chamber 100 where the polishing pad 300 is submerged, thus cleaning the polishing pad 300. The ultrasonic cavitation generates high-frequency cavitation bubbles in the water and causes them to burst, forming tiny shock waves and high-speed micro-jet streams, thereby removing contaminants attached to the polishing surface 301 and achieving deep cleaning of the polishing pad 300.

[0153] In one example, such as Figure 2 As shown, when the polishing surface 301 faces the bottom wall of the cleaning chamber 100, the polishing surface 301 (polishing pad 300) is in a horizontal state. When the polishing surface 301 is in a horizontal state, the contaminants attached to the polishing surface 301 will directly detach from the polishing surface 301 under the action of gravity.

[0154] In one example, after the nozzle 3 releases water to clean the polishing pad 300, an ultrasonic generator is used to perform deep ultrasonic cleaning on the polishing pad 300. After ultrasonic cleaning, the nozzle 3 releases airflow to dry the polishing pad 300.

[0155] In one feasible implementation, each cleaning chamber 100 has a water inlet 103 on its bottom wall. After cleaning the polishing pad 300 using the cavitation effect of the ultrasonic generator, the waste liquid in the cleaning chamber 100 is discharged after the water inlet 103 is opened, so as to avoid secondary contamination of the polishing pad 300 by the pollutants in the waste liquid under the action of airflow when the nozzle 3 dries the polishing pad 300.

[0156] In one feasible embodiment, each cleaning chamber 100 has a vent 104 at its top, and each vent 104 is connected to one end of a vacuum pump 400, the other end of which is connected to the outside of the cleaning chamber 100. The vacuum pump 400 can be used to carry water vapor splashed out of the cleaning chamber 100 through the vent 104.

[0157] Please refer to the following: Figures 1 to 4 The present invention provides a cleaning method for a polishing pad based on the above-mentioned cleaning device, the method comprising the following steps S1 to S4.

[0158] Step S1: Place the polishing pad 300 inside the cleaning chamber 100.

[0159] The present invention does not limit the size and shape of the polishing pad 300. For example, the polishing pad 300 is circular and its diameter can be 200 mm.

[0160] Step S2: Control the polishing surface 301 to face the nozzle 3, and control the polishing pad 300 to rotate.

[0161] The polishing surface 301 is controlled to face the nozzle 3 using a dual-axis servo motor 12. The polishing pad 300 can rotate 360°.

[0162] Step S3: Control the nozzle 3 to release water flow and control the nozzle 3 to rise and fall in the vertical direction to clean the polishing pad 300 which is in a rotating state.

[0163] Nozzle 3 can automatically clean the rotating polishing pad 300 from different positions, providing full coverage.

[0164] As one implementation method of step S3, step S3 includes steps S31 to S34.

[0165] Step S31: Control the distance between the nozzle 3 and the polishing surface 301 to the second preset distance.

[0166] The nozzle 3 is moved toward the polishing surface 301 by the horizontal drive mechanism 22, so that the distance between the nozzle 3 and the polishing surface 301 is the second preset distance.

[0167] For example, the second preset distance is 5mm to 10mm, such as 5mm, 6mm, 7mm, 8mm, 9mm, 10mm and any value between the two mentioned above.

[0168] Step S32: Control the nozzle 3 in the lifting state to release water flow at a second preset water pressure to clean the polishing pad 300 in the rotating state for a second preset time.

[0169] The nozzle 3 is controlled to move up and down vertically using the vertical drive mechanism 21, at which point the nozzle 3 is in a vertical lifting state. The water pump 52 is turned on and the air pump 51 is turned off. Driven by the water pump 52, the cleaning fluid in the water source enters the nozzle 3 through the second pipeline 55 and the first branch 53. The pressure control device 56 is adjusted so that the nozzle 3 releases low-pressure water flow at the second preset water pressure.

[0170] For example, the second preset water pressure of the water flow is 10 bar to 20 bar, such as 10 bar, 11 bar, 12 bar, 13 bar, 14 bar, 15 bar, 16 bar, 17 bar, 18 bar, 19 bar, 20 bar and any value between the two; the second preset time is 5 min to 10 min, such as 5 min, 6 min, 7 min, 8 min, 9 min, 10 min and any value between the two.

[0171] When the distance between the nozzle 3 and the polishing surface 301 is at the second preset distance, the nozzle 3 releases a low-pressure water flow with the second preset water pressure to clean the rotating polishing pad 300 for a second preset time. The low-pressure rinsing can soften the polishing pad 300 and fully remove the polishing liquid from the polishing surface 301 quickly, preventing it from solidifying and clogging the polishing surface 301. Visually, the released water flow gradually changes from turbid to clear, indicating that the polishing liquid is gradually rinsed away and there is no need for excessive cleaning.

[0172] Step S33: Control the distance between the nozzle 3 and the polishing surface 301 to the third preset distance.

[0173] The nozzle 3 is moved away from the polishing surface 301 by the horizontal drive mechanism 22, so as to increase the distance between the nozzle 3 and the polishing surface 301 to a third preset distance.

[0174] For example, the third preset distance is 10mm to 20mm, such as 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm and any value between the two mentioned above.

[0175] Step S34: Control the nozzle 3, which is in a vertical lifting state, to release water flow at a third preset water pressure to clean the polishing pad 300, which is in a rotating state, for a third preset time.

[0176] The nozzle 3 is controlled to be in a vertical lifting state by the vertical drive mechanism 21. The water pump 52 and the air pump 51 are turned on. Driven by the water pump 52 and the air pump 51, the cleaning liquid in the water source enters the nozzle 3 through the second pipe 55 and the first branch 53, and the air in the air source enters the nozzle 3 through the first pipe 54 and the first branch 53. The pressure control device 56 is adjusted so that the nozzle 3 releases high-pressure water vapor at the third preset water pressure.

[0177] For example, the third preset water pressure is 80 bar to 120 bar, such as 80 bar, 85 bar, 90 bar, 95 bar, 100 bar, 110 bar, 115 bar, 120 bar and any value between the two; the third preset time is 10 min to 15 min, such as 10 min, 11 min, 12 min, 13 min, 14 min, 15 min and any value between the two.

[0178] When the distance between the nozzle 3 and the polishing surface 301 is at the third preset distance, the nozzle 3 releases high-pressure water vapor at the third preset water pressure to clean the rotating polishing pad 300 for the third preset time. The high-pressure water vapor can impact the surface and pores of the polishing pad 300, gently removing stubborn contaminants, which not only improves the cleaning effect, but also minimizes damage to the polishing surface 301.

[0179] It should be noted that the third preset distance is greater than the second preset distance, the third preset water pressure is greater than the second preset water pressure, and the third preset time is greater than the second preset time.

[0180] Compared to low-pressure water flow, which is difficult to remove stubborn contaminants, high-pressure water flow has a greater impact on the polishing pad 300 and is more likely to damage the polishing surface 301. This cleaning method first uses low-pressure water flow to remove the polishing liquid on the polishing pad 300 to prevent it from solidifying and clogging the polishing surface. Then, high-pressure water vapor is used to impact the polishing surface 301 and pores, gently removing stubborn contaminants. This improves the cleaning effect and minimizes damage to the polishing surface 301.

[0181] It is worth noting that when the nozzle 3 releases water at the second preset water pressure, the lifting speed of the nozzle 3 is 100 mm / min to 200 mm / min, for example, it can be 100 mm / min, 120 mm / min, 140 mm / min, 160 mm / min, 180 mm / min, 200 mm / min and any value between the two mentioned above; the rotation speed of the polishing pad 300 is 60 rad / min to 80 rad / min; for example, it can be 60 rad / min, 65 rad / min, 70 rad / min, 75 rad / min, 80 rad / min and any value between the two mentioned above.

[0182] The nozzle 3 at the lifting speed and the polishing pad 300 at the rotation speed can better adapt to the second preset water pressure, ensuring that the water flow can effectively cover the polishing surface 301. This prevents the gap of the cleaning spiral trajectory from being too large due to the lifting speed exceeding 200 mm / min, resulting in uncovered "striped areas" and leakage of polishing liquid; it also prevents excessive local cleaning time due to the lifting speed being less than 100 mm / min; it prevents the centrifugal force from throwing away too much water due to the rotation speed exceeding 80 rad / min, reducing water flow utilization; and it prevents the formation of cleaning "dead zones" on the polishing surface 301 due to the rotation speed being less than 60 rad / min.

[0183] When nozzle 3 releases water at a third preset water pressure, the lifting speed of nozzle 3 is 50 mm / min to 100 mm / min, for example, it can be 50 mm / min, 60 mm / min, 70 mm / min, 80 mm / min, 90 mm / min, 100 mm / min and any value between the two; the rotation speed of polishing pad 300 is 80 rad / min to 100 rad / min, for example, it can be 80 rad / min, 85 rad / min, 90 rad / min, 95 rad / min, 100 rad / min and any value between the two.

[0184] The nozzle 3 at this lifting speed and the polishing pad 300 at this rotation speed can be better adapted to the third preset water pressure to ensure that water vapor can effectively penetrate and peel off the dirt layer in a very short residence time. This prevents the gap of the cleaning spiral trajectory from being too large due to the lifting speed exceeding 100 mm / min, resulting in uncovered "stripe areas" and missed rinsing of dirt or contaminants; it also prevents the polishing pad 300 from being damaged due to local over-washing even though the lifting speed is less than 50 mm / min, although the coverage is complete; it also prevents the centrifugal force from quickly throwing water vapor away from the polishing surface 301 due to the rotation speed exceeding 100 rad / min, reducing the cleaning efficiency, and potentially causing dirt or contaminants to be not cleaned properly due to the short residence time at the impact point; and it prevents the uniform coverage advantage brought by the rotation from being fully utilized due to the rotation speed less than 80 rad / min, which may lead to local repeated cleaning.

[0185] Step S4: Control the nozzle 3, which is in a vertical lifting state, to release airflow to dry the polishing pad 300, which is in a rotating state.

[0186] As one implementation method of step S4, step S4 includes steps S41 to S42.

[0187] Step S41: Control the distance between the nozzle 3 and the polishing surface 301 to the fourth preset distance.

[0188] The fourth preset distance is 1mm to 5mm, for example, it can be 1mm, 2mm, 3mm, 4mm, 5mm and any value between the two mentioned above.

[0189] Step S42: Control the nozzle 3, which is in a vertical lifting state, to release airflow at a preset air pressure to blow and dry the rotating polishing pad 300 for a fourth preset time.

[0190] Turn off the water pump 52 and turn on the air pump 51. The air in the air source enters the nozzle 3 through the first pipeline 54 and the first branch 53. Adjust the pressure control device 56 so that the nozzle 3 releases airflow at a preset air pressure.

[0191] For example, the preset air pressure of the airflow is 80 bar to 120 bar, such as 80 bar, 85 bar, 90 bar, 95 bar, 100 bar, 105 bar, 110 bar, 115 bar, 120 bar and any value between the two; the fourth preset time is 10 min to 15 min, such as 10 min, 11 min, 12 min, 13 min, 14 min, 15 min and any value between the two.

[0192] When the distance between the nozzle 3 and the polishing surface 301 is at a fourth preset distance, the airflow released by the nozzle 3 at a preset air pressure blows and dries the rotating polishing pad 300 for a fourth preset time. The high-pressure airflow automatically dries the polishing surface 301 in full coverage, removing residual abrasive and water stains.

[0193] It is worth noting that when the nozzle 3 releases airflow at a preset air pressure, the lifting speed of the nozzle 3 is 30 mm / min to 50 mm / min, and the rotation speed of the polishing pad 300 is 100 rad / min to 250 rad / min.

[0194] The nozzle 3 at the lifting speed and the polishing pad 300 at the rotation speed can be better adapted to the preset air pressure to ensure that the effective action time and impact force of the airflow at each point of the polishing surface 301 are sufficient to blow away the moisture there. This prevents the undried annular water lines from being left due to the lifting speed exceeding 50 mm / min; prevents the drying efficiency from being low due to the lifting speed being less than 30 mm / min; prevents the airflow from being scattered by centrifugal force due to the rotation speed exceeding 250 rad / min, thus reducing the drying efficiency; and prevents the entire polishing surface 301 from being unable to be evenly covered due to the rotation speed being less than 100 rad / min.

[0195] In one feasible implementation, after step S3 and before step S4, the above cleaning method further includes step S30, which includes steps S301 to S303.

[0196] Step S301: Control the distance between the nozzle 3 and the polishing surface 301 to the first preset distance, and stop the polishing pad 300 from rotating and the nozzle 3 from rising and falling.

[0197] For example, the first preset distance is 120mm to 150mm, such as 120mm, 125mm, 130mm, 135mm, 140mm, 145mm, 150mm and any value between the two mentioned above.

[0198] Step S302: Control the polishing surface 301 to face the bottom wall of the cleaning chamber 100, and control the nozzle 3 to release water flow into the cleaning chamber 100 at the first preset water pressure until the polishing pad 300 is submerged.

[0199] The polishing surface 301 is controlled to face the bottom wall of the cleaning chamber 100 using a dual-axis servo motor 12. The water pump 52 is turned on and the air pump 51 is turned off. Driven by the water pump 52, the cleaning fluid in the water source enters the nozzle 3 through the second pipeline 55 and the first branch 53. The pressure control device 56 is adjusted so that the nozzle 3 releases water at the first preset water pressure.

[0200] For example, the first preset water pressure is 2 bar to 3 bar, such as 2.1 bar, 2.2 bar, 2.3 bar, 2.4 bar, 2.5 bar, 2.6 bar, 2.7 bar, 2.8 bar, 2.9 bar, 3.0 bar, and any value between the two mentioned above.

[0201] Step S303: Control the ultrasonic generator to emit ultrasonic waves in the water that immerses the polishing pad 300 to clean the polishing pad 300 for a first preset time.

[0202] For example, the first preset time is 3 min to 5 min, such as 3 min, 3.5 min, 4 min, 4.5 min, 5 minr and any value between the two; the power of the ultrasonic generator is 100 to 500 W, such as 100 W, 150 W, 200 W, 250 W, 300 W, 350 W, 400 W, 450 W, 500 W and any value between the two.

[0203] After completing the ultrasonic cleaning, open the water inlet 103 to drain the liquid from the cleaning chamber 100; then, use the dual-axis servo motor 12 to control the polishing surface 301 to face the nozzle 3, i.e. Figure 1 As shown, deep cleaning is achieved by relying on the cavitation effect generated by ultrasonic vibration to break the adhesion between contaminants and polishing pad 3.

[0204] Using the cleaning method described above, low-pressure water rinsing softens the polishing pad 300, effectively and quickly removing the polishing liquid from the polishing surface 301, preventing it from solidifying and clogging the surface, thus avoiding excessive cleaning. Then, high-pressure steam impacts the polishing surface 301 and its pores, gently removing stubborn contaminants, improving the cleaning effect while minimizing damage to the polishing surface 301. Finally, an ultrasonic generator produces ultrasonic vibrations, which create cavitation in the water submerged in the polishing pad 300 within the cleaning chamber 100, cleaning the pad 300. The process involves generating high-frequency cavitation bubbles in water and causing them to burst, forming tiny shock waves and high-speed micro-jets, thereby removing contaminants adhering to the polishing surface 301 and achieving deep cleaning of the polishing pad 300. The high-pressure airflow provides full-coverage automatic drying of the polishing surface 301, reducing the time required for the polishing pad 301 to air dry naturally. This prevents uneven drying of the polishing surface 301, which can lead to different degrees of hardness in different areas and cause localized pressure differences during polishing, resulting in scratches or inconsistent gloss on the surface of the crystal to be polished. This helps improve the quality of the crystal to be polished.

[0205] Furthermore, a fully automated polishing pad cleaning device can be constructed by controlling the vertical drive mechanism 21 and the horizontal drive mechanism 22, installing position sensors on the wall of the control room 200, and setting up start-stop devices, thereby reducing manual operation. At the same time, automated control can ensure the consistency of cleaning parameters, further improving the cleaning effect and stability of the polishing pad, and providing support for the efficient and precise advancement of crystal grinding and polishing processes.

[0206] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the invention without departing from the principles and spirit of the invention, and all such changes should fall within the protection scope of the claims of the present invention.

Claims

1. A cleaning method characterized by, The method comprises the following steps: placing a polishing pad in a cleaning chamber; wherein the polishing pad has a polishing surface, the cleaning chamber has oppositely arranged first and second side walls, the inner wall of the first side wall is movably connected to the polishing pad, and the second side wall is slidably connected to a nozzle; controlling the polishing surface to face the nozzle and controlling the polishing pad to rotate; controlling the nozzle to release water flow and controlling the nozzle to ascend and descend along the vertical direction to clean the polishing pad in the rotating state; controlling the nozzle in the vertical ascending and descending state to release air flow to dry the polishing pad in the rotating state.

2. The cleaning method according to claim 1, characterized by, The bottom wall of the cleaning chamber is further provided with an ultrasonic generator below the polishing pad. After the step of controlling the nozzle to release water flow and controlling the nozzle to ascend and descend along the vertical direction to clean the polishing pad in the rotating state, the cleaning method further comprises the following steps: controlling the distance between the nozzle and the polishing surface to be a first preset distance, and stopping the polishing pad from rotating and the nozzle from ascending and descending; controlling the polishing surface to face the bottom wall of the cleaning chamber, and controlling the nozzle to release water flow at a first preset water pressure to fill the cleaning chamber until the polishing pad is immersed; controlling the ultrasonic generator to emit ultrasonic waves in the water in which the polishing pad is immersed to clean the polishing pad for a first preset time; Further comprising at least one of the following: the first preset distance is 120mm-150mm; the first preset water pressure is 2bar-3bar; the first preset time is 3min-5min the power of the ultrasonic generator is 100W-500W.

3. The cleaning method according to claim 1 or 2, characterized by, The step of controlling the nozzle to release water flow and controlling the nozzle to ascend and descend along the vertical direction to clean the polishing pad in the rotating state comprises: controlling the distance between the nozzle and the polishing surface to be a second preset distance; controlling the nozzle in the vertical ascending and descending state to release water flow at a second preset water pressure to clean the polishing pad in the rotating state for a second preset time; controlling the distance between the nozzle and the polishing surface to be a third preset distance; controlling the nozzle in the vertical ascending and descending state to release water flow at a third preset water pressure to clean the polishing pad in the rotating state for a third preset time; wherein the third preset distance is greater than the second preset distance, the third preset water pressure is greater than the second preset water pressure, and the third preset time is greater than the second preset time; Further comprising at least one of the following: the second preset distance is 5mm-10mm; the third preset distance is 10mm-20mm; the second preset water pressure is 10bar-20bar; the third preset water pressure is 80bar-120bar; the second preset time is 5min-10min; the third preset time is 10min-15min; when the nozzle releases water flow at the second preset water pressure, the ascending and descending speed of the nozzle is 100mm / min-200mm / min, and the rotating speed of the polishing pad is 60rad / min-80rad / min; When the nozzle releases water flow at the third preset water pressure, the lifting speed of the nozzle is 50 mm / min-100 mm / min, and the rotation speed of the polishing pad is 80 rad / min-100 rad / min.

4. The cleaning method according to claim 3, wherein The control of the nozzle in the vertical lifting state releases air flow to dry the polishing pad in the rotating state, which comprises: The distance between the nozzle and the polishing surface is controlled to be a fourth preset distance; The nozzle in the vertical lifting state releases air flow at a preset air pressure to dry the polishing pad in the rotating state for a fourth preset time; Further comprising at least one of the following: The fourth preset distance is 1 mm-5 mm; The preset air pressure is 80 bar-120 bar; The fourth preset time is 10 min-15 min; When the nozzle releases air flow at the preset air pressure, the lifting speed of the nozzle is 30 mm / min-50 mm / min, The rotation speed of the polishing pad is 100 rad / min-250 rad / min.

5. The cleaning method according to claim 4, wherein The cleaning chamber is provided with a water and air pipeline assembly for controlling the nozzle to release water flow and controlling the nozzle to release air flow; the water and air pipeline assembly comprises: An air pump having a gas outlet end and a gas inlet end connected in communication, the gas inlet end of the air pump being connected in communication with an air source; A water pump having a liquid outlet end and a liquid inlet end connected in communication, the liquid inlet end of the water pump being connected in communication with a water source; A first branch having a first end and a second end connected in communication, the second end of each first branch being connected in communication with the nozzle; A first pipeline having a first end and a second end connected in communication, the first end of the first pipeline being connected in communication with the gas outlet end of the air pump, and the second end of the first pipeline being connected in communication with the first end of the first branch; A second pipeline having a first end and a second end connected in communication, the first end of the second pipeline being connected in communication with the gas outlet end of the water pump, and the second end of the second pipeline being connected in communication with the first end of the first branch; A pressure valve arranged at the second end of the first pipeline, the second end of the second pipeline, and the first end of the first branch; The cleaning method comprises at least one of the following: The control of the nozzle to release water flow at the first preset water pressure comprises: Turning on the water pump, turning off the air pump, and adjusting the outlet pressure of the pressure valve to the first preset water pressure, so that the nozzle releases water flow at the first preset water pressure; The control of the nozzle in the lifting state to release water flow at the second preset water pressure comprises: Turning on the water pump, turning off the air pump, and adjusting the outlet pressure of the pressure valve to the second preset water pressure, so that the nozzle releases water flow at the second preset water pressure; The control of the nozzle in the lifting state to release water flow at the third preset water pressure comprises: Turning on the water pump, turning on the air pump, and adjusting the outlet pressure of the pressure valve to the third preset water pressure, so that the nozzle releases water flow at the third preset water pressure; The control of the nozzle in the lifting state to release water flow at the preset air pressure comprises: Turning off the water pump, turning on the air pump, and adjusting the outlet pressure of the pressure valve to the preset air pressure, so that the nozzle releases air flow at the preset air pressure.

6. The cleaning method according to claim 4, wherein The cleaning chamber is externally provided with a driving mechanism, the driving mechanism is slidably connected with the nozzle in the cleaning chamber, and the driving mechanism is used to drive the nozzle to move so as to change the position of the nozzle relative to the polishing surface; The driving mechanism comprises: A horizontal driving mechanism, an output end of the horizontal driving mechanism is correspondingly connected with the nozzle in the cleaning chamber, and the horizontal driving mechanism is used to drive the nozzle to move in the horizontal direction so as to change the position of the nozzle relative to the polishing surface; The cleaning method comprises at least one of the following: The control of the distance between the nozzle and the polishing surface to the first preset distance comprises: The horizontal driving mechanism is used to drive the nozzle to move in the horizontal direction so that the distance between the nozzle and the polishing surface is the first preset distance; The control of the distance between the nozzle and the polishing surface to the second preset distance comprises: The horizontal driving mechanism is used to drive the nozzle to move in the horizontal direction so that the distance between the nozzle and the polishing surface is the second preset distance; The control of the distance between the nozzle and the polishing surface to the third preset distance comprises: The horizontal driving mechanism is used to drive the nozzle to move in the horizontal direction so that the distance between the nozzle and the polishing surface is the third preset distance; The control of the distance between the nozzle and the polishing surface to the fourth preset distance comprises: The horizontal driving mechanism is used to drive the nozzle to move in the horizontal direction so that the distance between the nozzle and the polishing surface is the fourth preset distance.

7. The cleaning method according to claim 6, wherein The driving mechanism further comprises a vertical lifting mechanism, an output end of the vertical lifting mechanism and the horizontal driving mechanism are connected, and the vertical lifting mechanism is used to drive the horizontal driving mechanism to move in the vertical direction; the cleaning method further comprises: The vertical lifting mechanism is used to drive the horizontal driving mechanism to move in the vertical direction in a continuous reciprocating manner, so that the nozzle follows the horizontal driving mechanism and is in a continuous reciprocating lifting state synchronously.

8. The cleaning method according to claim 4, wherein An inner wall of a second side wall of the cleaning chamber is fixedly connected with an adjusting assembly, the adjusting assembly is used to movably connect the polishing pad, and the adjusting assembly is configured to adjust the orientation of the polishing surface; the adjusting assembly comprises a double-shaft steering engine, an output end of the double-shaft steering engine is configured to be connected with the polishing pad, and the double-shaft steering engine is used to change the orientation of the polishing surface; the cleaning method further comprises: The double-shaft steering engine is used to drive the polishing pad to move so as to change the orientation of the polishing surface.

9. The cleaning method according to claim 8, wherein, The adjusting assembly further comprises a rotating mechanism, an output end of the rotating mechanism is connected with the double-shaft steering engine; the cleaning method further comprises: The rotating mechanism is used to drive the double-shaft steering engine to move in a continuous reciprocating rotating manner, so that the polishing pad is in a continuous reciprocating rotating state.

10. A cleaning device characterized by The cleaning device comprises a cleaning chamber, a nozzle and a control device, the cleaning chamber is provided with a polishing pad; wherein the polishing pad has a polishing surface, the cleaning chamber has a first side wall and a second side wall arranged oppositely, the first side wall of the cleaning chamber is movably connected with the polishing pad, and the second side wall is slidably connected with the nozzle; The control device is configured to control the polishing surface to face the nozzle and control the polishing pad to rotate; control the nozzle to release water flow and control the nozzle to move up and down along a vertical direction to clean the polishing pad in a rotating state; control the nozzle in the up-and-down movement state to release air flow to dry the polishing pad in the rotating state.

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