IGBT device life prolonging method, device and equipment and computer readable storage medium

Abstract

The invention relates to the technical field of IGBT devices, and discloses a method, a device and equipment for prolonging the service life of an IGBT device, and a computer readable storage medium. According to the embodiment of the invention, the health degree index is determined according to the calibration parameter and the measured parameter corresponding to the IGBT device, the health condition of the IGBT device can be monitored in real time, then the compensation strategy is determined according to the compensation interval in which the health degree index is located, and the driving parameter of the IGBT device is compensated through the compensation strategy, so that the driving parameter of the IGBT device is compensated. The driving parameters such as the gate driving voltage can be adaptively adjusted according to the health degree index, so that the problems of internal resistance increase and heating increase caused by aging are compensated, the working stress of the IGBT device is reduced, the service life of the IGBT device is prolonged, and the efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of IGBT device technology, specifically to a method, apparatus, device, and computer-readable storage medium for extending the lifespan of IGBT devices. Background Technology

[0002] Currently, the Insulated-Gate Bipolar Transistor (IGBT) is a core device in modern power electronics, especially in new energy vehicles, where it is an indispensable key component. Its performance directly affects the reliability and lifespan of the entire power system. However, its control principle, physical characteristics, and operating environment determine that it experiences rapid temperature rise. Over long-term durability, it faces the risk of failure, such as bond wire detachment, solder fatigue, and increased internal resistance. This leads to a vicious cycle: increased internal resistance → increased power consumption → increased temperature rise → accelerated aging → performance degradation and shortened lifespan. Summary of the Invention

[0003] In view of the above problems, embodiments of the present invention provide a method, apparatus, device and computer-readable storage medium for extending the lifespan of IGBT devices, in order to solve the problem of short lifespan of IGBT devices in the prior art.

[0004] According to one aspect of the present invention, a method for extending the lifetime of an IGBT device is provided, the method comprising: The health index of the IGBT device is determined based on the calibration parameters and measured parameters corresponding to the IGBT device. Determine the compensation range in which the health index falls, and determine the compensation strategy based on the compensation range; The compensation strategy is used to compensate the driving parameters of the IGBT device, so as to extend the life of the IGBT device based on the compensated driving parameters.

[0005] According to another aspect of the present invention, an IGBT device lifetime extension device is provided, comprising: The index determination module is used to determine the health index of the IGBT device based on the calibration parameters and measured parameters corresponding to the IGBT device. The strategy determination module is used to determine the compensation range in which the health index falls, and to determine the compensation strategy based on the compensation range. The parameter compensation module is used to compensate the driving parameters of the IGBT device through the compensation strategy, so as to extend the life of the IGBT device based on the compensated driving parameters.

[0006] According to another aspect of the present invention, an IGBT device life extension device is provided, comprising: a processor, a memory, a communication interface, and a communication bus, wherein the processor, the memory, and the communication interface communicate with each other through the communication bus; The memory is used to store at least one executable instruction that causes the processor to perform the operation of the IGBT device lifetime extension method described above.

[0007] According to another aspect of the present invention, a computer-readable storage medium is provided, the storage medium storing at least one executable instruction that causes an IGBT device lifetime extension device / apparatus to perform the operation of the IGBT device lifetime extension method described above.

[0008] This invention determines the health index of the IGBT device based on its calibration and measured parameters. Then, it determines the compensation range within which the health index falls and, based on this range, determines a compensation strategy. Finally, it compensates the driving parameters of the IGBT device using this strategy, thereby extending the device's lifespan. This invention first determines the health index based on the calibration and measured parameters, enabling real-time monitoring of the IGBT device's health. Then, it determines a compensation strategy based on the compensation range of the health index and compensates the driving parameters of the IGBT device using this strategy. This allows for adaptive adjustment of driving parameters such as the gate drive voltage based on the health index, thereby compensating for increased internal resistance and heat generation caused by aging, reducing the operating stress on the IGBT device, extending its lifespan, and improving efficiency.

[0009] The above description is merely an overview of the technical solutions of the embodiments of the present invention. In order to better understand the technical means of the embodiments of the present invention and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0010] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 A flowchart illustrating a first embodiment of the method for extending the lifespan of IGBT devices provided by the present invention is shown. Figure 2 A flowchart illustrating a second embodiment of the method for extending the lifespan of IGBT devices provided by the present invention is shown. Figure 3A flowchart illustrating a third embodiment of the method for extending the lifespan of IGBT devices provided by the present invention is shown. Figure 4 This diagram illustrates the overall process of an embodiment of the method for extending the lifespan of IGBT devices provided by the present invention. Figure 5 A schematic diagram of the structure of a first embodiment of the IGBT device life extension device provided by the present invention is shown; Figure 6 A schematic diagram of an embodiment of the IGBT device life extension device provided by the present invention is shown. Detailed Implementation

[0011] Exemplary embodiments of the invention will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein.

[0012] Figure 1 This diagram illustrates a first embodiment of the IGBT device lifetime extension method provided by the present invention, which is executed by an IGBT device lifetime extension device. Figure 1 As shown, the method includes the following steps: Step 10: Determine the health index of the IGBT device based on the calibration parameters and measured parameters corresponding to the IGBT device.

[0013] Among them, the calibration parameters corresponding to the IGBT device can be the parameters obtained during the bench calibration process of the IGBT device, which may include the voltage drop between the collector and the emitter. The measured parameters can be the parameters collected during the actual operation of the IGBT, which may also include the voltage drop between the collector and the emitter.

[0014] In one implementation, the health index can be determined based on the calibration parameters and measured parameters corresponding to the IGBT device. The health index can characterize the aging degree of the IGBT device. Generally, the smaller the health index, the healthier the IGBT device; the larger the health index, the more severe the aging degree of the IGBT device.

[0015] Step 20: Determine the compensation range in which the health index falls, and determine the compensation strategy based on the compensation range.

[0016] In one implementation, the compensation range of the health index can be determined, and a compensation strategy can be determined based on the compensation range. The compensation strategy is different for different compensation ranges. The compensation strategy can be no compensation, compensation of the driving parameters of the IGBT device based on preset values, etc.

[0017] Step 30: Compensate the driving parameters of the IGBT device using the compensation strategy to extend the lifespan of the IGBT device based on the compensated driving parameters.

[0018] In one implementation, the driving parameters of the IGBT device can be compensated through a compensation strategy. The driving parameters can be the gate driving voltage of the IGBT. The gate driving voltage can be adaptively adjusted based on the compensation strategy to compensate for the problems of increased internal resistance and increased heat generation caused by the aging of the IGBT device, thereby reducing the working stress of the IGBT device, extending its life and improving its efficiency.

[0019] As can be seen from the above, in the IGBT device lifespan extension method provided by the embodiments of the present invention, the health index of the IGBT device is determined according to the calibration parameters and measured parameters corresponding to the IGBT device. Then, the compensation range in which the health index is located is determined, and a compensation strategy is determined based on the compensation range. Finally, the driving parameters of the IGBT device are compensated through the compensation strategy, so as to extend the lifespan of the IGBT device based on the compensated driving parameters. The embodiments of the present invention first determine the health index according to the calibration parameters and measured parameters corresponding to the IGBT device, which can monitor the health status of the IGBT device in real time. Then, a compensation strategy is determined according to the compensation range in which the health index is located, and the driving parameters of the IGBT device are compensated through the compensation strategy. This allows for adaptive adjustment of driving parameters such as gate drive voltage according to the health index, thereby compensating for the problems of increased internal resistance and increased heat generation caused by aging, reducing the working stress of the IGBT device, extending its lifespan and improving efficiency.

[0020] Figure 2 A flowchart illustrating a second embodiment of the IGBT device lifetime extension method provided by the present invention is shown, the method being performed by an IGBT device lifetime extension device. Figure 2 As shown, step 10 includes the following steps: Step 101: Obtain the calibration parameters and measured parameters of the IGBT device at each target point within the target period. The calibration parameters include the target calibration saturation voltage drop, and the measured parameters include the target measured saturation voltage drop.

[0021] The target period can be dynamically and adaptively adjusted. For example, when the IGBT device is in good health, the value can be set according to the reference period T=T_base (e.g., 10-60s, or according to the specific application). When the IGBT device is in the aging period, the value can be set according to T=T_base*(1-ΔVce_hist), where T is the target period, T_base is the reference period, and ΔVce_hist is the health index of the IGBT device. The target period can also be determined in other ways, and this embodiment does not impose specific restrictions on it.

[0022] In one implementation, several target points can be selected within the target period, for example, one target point can be selected at 1-second intervals, and the calibration parameters and measured parameters corresponding to each target point can be obtained. The calibration parameters may include the target calibration saturation voltage drop, which refers to the voltage drop between the collector and emitter of the IGBT device. The measured parameters may include the target measured saturation voltage drop.

[0023] In one optional approach, step 101 includes: acquiring the calibration parameter mapping relationship corresponding to the IGBT device under a bench calibration environment, wherein the calibration parameter mapping relationship includes the mapping relationship between calibration gate drive voltage, calibration junction temperature, calibration collector current and calibration saturation voltage drop; acquiring the measured parameter mapping relationship corresponding to the IGBT device under a test environment, wherein the measured parameter mapping relationship includes the mapping relationship between measured gate drive voltage, measured junction temperature, measured collector current and measured saturation voltage drop; determining the target gate drive voltage, target junction temperature and target collector current corresponding to each target point within the target period, and finding the target calibration saturation voltage drop from the calibration parameter mapping relationship based on the target gate drive voltage, target junction temperature and target collector current; finding the target measured saturation voltage drop corresponding to each target point from the measured parameter mapping relationship based on the target gate drive voltage, target junction temperature and target collector current.

[0024] In a bench calibration environment, the calibration parameter mapping relationship corresponding to the IGBT device can be acquired, which can be expressed as Vce(sat)_initial=f(Ic,Tj,Vge), where Vce(sat)_initial is the standard saturation voltage drop, Ic is the standard collector current, Tj is the standard junction temperature, and Vge is the standard gate drive voltage. To construct the calibration parameter mapping relationship, temperature values ​​can be taken based on a temperature interval ΔT between the gate drive voltage Vge and the IGBT junction temperature Tj. The specified gate drive voltage can be the calibration gate drive voltage Vge. Under this calibration gate drive voltage Vge, values ​​can be taken within the range of the highest and lowest junction temperatures according to the temperature interval to obtain each temperature point. At each temperature point, the calibration collector current Ic can be taken based on a current interval ΔI, and values ​​can be taken within the range of the maximum and minimum collector currents according to the current interval to obtain each current point. The IGBT's calibrated junction temperature Tj and calibrated collector current Ic form a series of measurement points, representing a one-to-many relationship between the gate drive voltage Vge, junction temperature Tj, and collector current Ic. The voltage drop between the collector and emitter of the IGBT device at each measurement point is measured using a test bench and used as the calibrated saturation voltage drop Vce(sat). The above steps are repeated, taking values ​​for the calibrated gate drive voltage Vge at voltage intervals ΔV, forming the calibrated junction temperature Tj, calibrated collector current Ic, and calibrated saturation voltage drop Vce(sat) under different calibrated gate drive voltages Vge. A mapping relationship is then established between the calibrated gate drive voltage Vge, calibrated junction temperature Tj, calibrated collector current Ic, and calibrated saturation voltage drop Vce(sat).

[0025] In one embodiment, the mapping relationship of the measured parameters corresponding to the IGBT device is acquired under the actual test environment, which can be expressed as Vce(sat)_real=f(Ici,Tji,Vgei), where Vce(sat)_real is the measured saturation voltage drop, Ici is the measured collector current, Tji is the measured junction temperature, and Vgei is the measured gate drive voltage. Vce(sat)_real can be obtained by using a dedicated sampling circuit (such as an isolated operational amplifier or an isolated ADC) in conjunction with the drive timing.

[0026] In one embodiment, the target gate drive voltage, target junction temperature, and target collector current corresponding to each target point within the target period can be determined. The target gate drive voltage, target junction temperature, and target collector current can be the gate drive voltage, junction temperature, and collector current collected in real time for each target point. The target calibrated saturation voltage drop is found from the calibration parameter mapping relationship based on the target gate drive voltage, target junction temperature, and target collector current. The target measured saturation voltage drop corresponding to each target point is found from the measured parameter mapping relationship based on the target gate drive voltage, target junction temperature, and target collector current.

[0027] Step 102: Calculate the pressure drop error value corresponding to each target point based on the difference between the target calibrated saturated pressure drop and the target measured saturated pressure drop.

[0028] For k target points within the target period, the difference between the calibrated saturated pressure drop and the measured saturated pressure drop for each target point can be calculated and used as the pressure drop error value, which can be expressed as ΔVce1, ΔVce2, ΔVce3, ..., ΔVcek. Step 103: Determine the health index of the IGBT device based on the voltage drop error value corresponding to each target point.

[0029] In one embodiment, for each target point, the corresponding voltage drop error value can be calculated. In this embodiment, the health index of the IGBT device can be determined based on all the voltage drop error values.

[0030] In one optional approach, step 103 includes: calculating a root mean square error value based on the voltage drop error value corresponding to each target point; calculating the average voltage drop value of the target calibration saturation voltage drop corresponding to each target point; and calculating the health index of the IGBT device based on the root mean square error value and the average voltage drop value.

[0031] The root mean square error can be calculated based on the pressure drop error value corresponding to each target point. By calculating the root mean square error weighted by the operating conditions, noise can be suppressed and the influence of different operating points on the health status assessment can be eliminated.

[0032] In one embodiment, the average voltage drop (Vce(sat)_model) of the target calibration saturation voltage drop at k target points within a corresponding cycle, based on the calibration temperature Tj, calibration current Ic, and calibration gate drive voltage Vge, can be calculated. Then, the health index of the IGBT device is calculated using the following formula: ΔVce_hist = ΔVce_real / Vce(sat)_model * 100%, where ΔVce_hist represents the health index, ΔVce_real represents the root mean square error, and Vce(sat)_model represents the average voltage drop. The calculated health index is then stored in the chip.

[0033] In one optional approach, calculating the root mean square error value based on the voltage drop error value corresponding to each target point includes: determining the rated collector current and reference junction temperature corresponding to the IGBT device; calculating a target coefficient based on the target collector current, the rated collector current, a current weighting coefficient, the target junction temperature, the reference junction temperature, and a temperature weighting coefficient; and calculating the root mean square error value based on the voltage drop error value corresponding to each target point and the target coefficient.

[0034] The rated collector current Ic_nom and reference junction temperature Tj_ref for the IGBT device are common fixed values ​​for IGBT devices, for example, the reference junction temperature Tj_ref is 25℃. The target coefficient can be calculated using the following formula. In the formula, α is the current weighting coefficient, β is the temperature weighting coefficient, and the current weighting coefficient and temperature weighting coefficient can be obtained through calibration to ensure that the health index has good robustness, sensitivity and aging linearity. Ici is the target collector current at the i-th target point, which is a real-time value and can be obtained through a three-phase current sensor. Tji is the target junction temperature at the i-th target point, which is a real-time value and can be obtained through the NTC temperature sensor inside the IGBT device or the CAN signal. Ic_nom is the rated collector current, Tj_ref is the reference junction temperature, and Tj_max is the maximum allowable junction temperature, such as 175℃.

[0035] In one embodiment, the root mean square error value ΔVce_real can be calculated using the following formula: , k represents the target point within the target period, Wi is the target coefficient, and ΔVcei is the pressure drop error value of the i-th target point.

[0036] As can be seen from the above, in the IGBT device lifespan extension method provided by the embodiments of the present invention, the calibration parameters and measured parameters corresponding to each target point of the IGBT device within the target period are obtained. The calibration parameters include the target calibrated saturation voltage drop, and the measured parameters include the target measured saturation voltage drop. Then, the voltage drop error value corresponding to each target point is calculated based on the difference between the target calibrated saturation voltage drop and the target measured saturation voltage drop. Finally, the health index of the IGBT device is determined based on the voltage drop error value corresponding to each target point. The embodiments of the present invention calculate the voltage drop error value corresponding to each target point based on the difference between the target calibrated saturation voltage drop and the target measured saturation voltage drop, which can determine the degree of deviation of the saturation voltage drop, and then accurately calculate the health index of the IGBT device based on the voltage drop error value corresponding to each target point.

[0037] Figure 3 A flowchart illustrating a third embodiment of the IGBT device lifetime extension method provided by the present invention is shown, the method being performed by an IGBT device lifetime extension device. Figure 3 As shown, step 20 includes the following steps: Step 201: Determine the compensation range in which the health index falls.

[0038] In one embodiment, a compensation range for the health index can be determined. The compensation range may include a first range, a second range, and a third range. The first range is the range in which the IGBT device is in a healthy or good state, the second range is the range in which the IGBT device is in an early aging or mid-aging state, and the third range is the range in which the IGBT device is in a severely aging state.

[0039] Step 202: When the compensation interval is the first interval, determine that the compensation strategy is not to compensate the gate drive voltage of the IGBT device. The first interval is the interval in which the IGBT device is in a healthy or good state.

[0040] In one embodiment, when the compensation interval is the first interval, the compensation strategy can be determined to be not to compensate the gate drive voltage of the IGBT device. The first interval is the interval in which the IGBT device is in a healthy or good state. If ΔVce_hist≤3%, it indicates that the IGBT device is in a healthy state, and the compensation strategy is not to compensate the gate drive voltage. If 3%<ΔVce_hist≤5%, it indicates that the IGBT device is in a good state, and the compensation strategy is not to compensate the gate drive voltage, and this event is recorded.

[0041] Step 203: When the compensation interval is the second interval, the compensation strategy is determined to be to perform linear compensation on the gate drive voltage of the IGBT device based on a preset compensation model. The second interval is the interval in which the IGBT device is in the early aging state or the middle aging state.

[0042] In one embodiment, when the compensation interval is the second interval, the compensation strategy can be determined as linear compensation of the gate drive voltage of the IGBT device based on a preset compensation model. The second interval is the interval where the IGBT device is in an early aging state or a mid-aging state. If 5% < ΔVce_hist ≤ 8%, it indicates that the IGBT device is in an early aging state, and the compensation strategy is to linearly compensate the gate drive voltage of the IGBT device based on a preset compensation model. The preset compensation model can be the following formula: Vge' = 15.0 + (ΔVce_hist - 5%) / 3% × 1.0V, where Vge' is the compensated gate drive voltage. If 8% < ΔVce_hist ≤ 12%, it indicates that the IGBT device is in a mid-aging state, and the compensation strategy is to linearly compensate the gate drive voltage of the IGBT device based on a preset compensation model. The preset compensation model can be the following formula: Vge' = 16.0 + (ΔVce_hist - 8%) / 4% × 1.0V. The above formula is related to the boundary of the interval.

[0043] Step 204: When the compensation interval is the third interval, determine that the compensation strategy is to compensate the gate drive voltage of the IGBT device according to a preset compensation value, where the third interval is the interval in which the IGBT device is in a severely aged state.

[0044] In one embodiment, when the compensation interval is the third interval, the third interval is the interval in which the IGBT device is in a severely aged state. The compensation strategy can be determined to compensate the gate drive voltage of the IGBT device according to a preset compensation value. The preset compensation value can be the upper limit of the compensation of the IGBT device, such as 17.0V, 18.0V, etc., and the gate drive voltage of the IGBT device can be compensated to the preset compensation value.

[0045] In one embodiment, the division of the above-mentioned compensation interval can be adjusted according to different performance modules to ensure that the adjustment is within a safe range. Since the higher the aging degree of the IGBT device, the greater the gate drive voltage that needs to be compensated, this embodiment increases the gate drive voltage compensated as the compensation interval increases.

[0046] In an optional embodiment, after step 30, the method further includes: after compensating the driving parameters of the IGBT device using the compensation strategy, monitoring the operating voltage pulse spike corresponding to the IGBT device; if the compensated driving parameters are higher than a first preset threshold or the operating voltage pulse spike is higher than a second preset threshold, then returning to the step of determining the compensation range in which the health index is located, and determining the compensation strategy based on the compensation range, until the new driving parameters are lower than the first preset threshold and the new operating voltage pulse spike is lower than the second preset threshold.

[0047] In one embodiment, after compensating the driving parameters of the IGBT device, the corresponding operating voltage pulse peak Vce_peak can be monitored. If the compensated driving parameters are higher than a first preset threshold or the operating voltage pulse peak Vce_peak is higher than a second preset threshold, it indicates a problem with the implemented compensation strategy. In this case, it is necessary to return to the step of determining the compensation range of the health index, redetermine a new compensation strategy, and compensate the driving parameters of the IGBT device based on the new compensation strategy until the obtained new driving parameters are lower than the first preset threshold and the new operating voltage pulse peak is lower than the second preset threshold. The first preset threshold can be the upper limit of the compensation of the gate drive voltage of the IGBT device, such as 17.0V, and the second preset threshold can be 90%*Vces, where Vces is the maximum allowable voltage between the collector and emitter, which is a device specification value.

[0048] In one embodiment, the protective boundary conditions for adaptively adjusting Vge can be determined, including: ① ensuring that it is far from the gate oxide breakdown voltage ±20V, such as Vge≤17.0V; ② real-time monitoring of whether the turn-off voltage pulse spike exceeds the set protection threshold, such as when the device operating voltage pulse spike Vce_peak≥90%*Vces. If at least one of the above two conditions is not met, then Vge can be linearly rolled back, that is, the gate drive voltage of the IGBT device is recompensated until the above two conditions are met. By setting the above conditions, a self-safety protection function can be achieved, and the adjustment of the gate drive voltage will stop when the preset conditions are reached, so as not to overdraw the life of the IGBT device.

[0049] In one embodiment, Figure 4 This diagram illustrates the overall flow of an embodiment of the method for extending the lifespan of IGBT devices provided by the present invention. Figure 4 As shown, a precise mathematical model of Vce(sat)_initial=f(Ic,Tj,Vge) can be constructed using a test bench. Then, real-time data is collected, and the root mean square error value ΔVce_real and the average pressure drop value Vce(sat)_model are calculated. Next, the health index ΔVce_hist is calculated, and then a graded dynamic compensation adjustment is performed. Then, an adaptive adjustment boundary judgment is made. If the condition is met, Vge compensation is executed. If the condition is not met, the process returns to the graded dynamic compensation adjustment steps. The above steps are repeated in each cycle to achieve Vge compensation in each cycle.

[0050] As can be seen from the above, in the IGBT device lifespan extension method provided by the embodiments of the present invention, by determining the compensation range of the health index, when the compensation range is the first range, the compensation strategy is determined to not compensate the gate drive voltage of the IGBT device. The first range is the range where the IGBT device is in a healthy or good state. When the compensation range is the second range, the compensation strategy is determined to linearly compensate the gate drive voltage of the IGBT device based on a preset compensation model. The second range is the range where the IGBT device is in an early aging or mid-aging state. When the compensation range is the third range, the compensation strategy is determined to compensate the gate drive voltage of the IGBT device according to a preset compensation value. The second range is the range where the IGBT device is in a severely aging state. By determining the compensation range of the health index and then compensating the gate drive voltage of the IGBT device through the compensation strategy corresponding to different compensation ranges, the embodiments of the present invention can adaptively adjust the drive parameters such as the gate drive voltage according to the health index, thereby compensating for the problems of increased internal resistance and increased heat generation caused by aging, reducing the working stress of the IGBT device, extending its lifespan and improving efficiency.

[0051] Figure 5A schematic diagram of an embodiment of the IGBT device lifetime extension device of the present invention is shown. Figure 5 As shown, the device 500 includes: an index determination module 510, a strategy determination module 520, and a parameter compensation module 530.

[0052] The index determination module 510 is used to determine the health index of the IGBT device based on the calibration parameters and measured parameters corresponding to the IGBT device. The strategy determination module 520 is used to determine the compensation range in which the health index is located, and to determine a compensation strategy based on the compensation range. The parameter compensation module 530 is used to compensate the driving parameters of the IGBT device through the compensation strategy, so as to extend the life of the IGBT device based on the compensated driving parameters.

[0053] In an optional embodiment, the index determination module 510 is further configured to acquire calibration parameters and measured parameters corresponding to each target point of the IGBT device within the target period, wherein the calibration parameters include the target calibration saturation voltage drop and the measured parameters include the target measured saturation voltage drop; calculate the voltage drop error value corresponding to each target point based on the difference between the target calibration saturation voltage drop and the target measured saturation voltage drop; and determine the health index of the IGBT device based on the voltage drop error value corresponding to each target point.

[0054] In one optional embodiment, the index determination module 510 is further configured to: acquire the calibration parameter mapping relationship corresponding to the IGBT device under bench calibration environment, the calibration parameter mapping relationship including: the mapping relationship between calibration gate drive voltage, calibration junction temperature, calibration collector current and calibration saturation voltage drop; acquire the measured parameter mapping relationship corresponding to the IGBT device under actual measurement environment, the measured parameter mapping relationship including: the mapping relationship between measured gate drive voltage, measured junction temperature, measured collector current and measured saturation voltage drop; determine the target gate drive voltage, target junction temperature and target collector current corresponding to each target point within the target period, and find the target calibration saturation voltage drop from the calibration parameter mapping relationship based on the target gate drive voltage, the target junction temperature and the target collector current; and find the target measured saturation voltage drop corresponding to each target point from the measured parameter mapping relationship based on the target gate drive voltage, the target junction temperature and the target collector current.

[0055] In an alternative embodiment, the index determination module 510 is further configured to calculate the root mean square error value based on the voltage drop error value corresponding to each target point; calculate the average voltage drop value of the target calibration saturation voltage drop corresponding to each target point; and calculate the health index of the IGBT device based on the root mean square error value and the average voltage drop value.

[0056] In an alternative embodiment, the index determination module 510 is further configured to determine the rated collector current and reference junction temperature corresponding to the IGBT device; calculate a target coefficient based on the target collector current, the rated collector current, the current weighting coefficient, the target junction temperature, the reference junction temperature, and the temperature weighting coefficient; and calculate a root mean square error value based on the voltage drop error value corresponding to each target point and the target coefficient.

[0057] In one optional embodiment, the strategy determination module 520 is further configured to determine the compensation range in which the health index falls; if the compensation range is a first range, the compensation strategy is determined to be no compensation for the gate drive voltage of the IGBT device, where the first range is the range in which the IGBT device is in a healthy or good state; if the compensation range is a second range, the compensation strategy is determined to be linear compensation for the gate drive voltage of the IGBT device based on a preset compensation model, where the second range is the range in which the IGBT device is in an early aging or mid-aging state; if the compensation range is a third range, the compensation strategy is determined to be compensation for the gate drive voltage of the IGBT device according to a preset compensation value, where the third range is the range in which the IGBT device is in a severely aging state.

[0058] In an optional embodiment, the parameter compensation module 530 is further configured to monitor the operating voltage pulse spike corresponding to the IGBT device after compensating the driving parameters of the IGBT device through the compensation strategy; if the compensated driving parameters are higher than a first preset threshold or the operating voltage pulse spike is higher than a second preset threshold, then return to the step of determining the compensation range in which the health index is located and determining the compensation strategy based on the compensation range, until the new driving parameters are lower than the first preset threshold and the new operating voltage pulse spike is lower than the second preset threshold.

[0059] The IGBT device life extension device provided in this embodiment can execute the method provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described in detail here.

[0060] Figure 6 The diagram shows a structural schematic of an embodiment of the IGBT device life extension device of the present invention. The specific embodiments of the present invention do not limit the specific implementation of the IGBT device life extension device.

[0061] like Figure 6As shown, the life extension device for the IGBT device may include: processor 403, communication interface 404, memory 406, and communication bus 408.

[0062] The processor 403, communication interface 404, and memory 406 communicate with each other via communication bus 408. Communication interface 404 is used to communicate with other network elements, such as clients or other servers. Processor 403 executes program 410, specifically performing the relevant steps described in the embodiment of the method for extending the lifespan of IGBT devices.

[0063] Specifically, program 410 may include program code, which includes computer-executable instructions.

[0064] Processor 403 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement embodiments of the present invention. The IGBT device lifetime extension device includes one or more processors, which may be processors of the same type, such as one or more CPUs; or processors of different types, such as one or more CPUs and one or more ASICs.

[0065] Memory 406 is used to store program 410. Memory 406 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0066] Specifically, program 410 can be called by processor 403 to enable the device to extend the lifespan of the IGBT device to execute the method provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described in detail here.

[0067] This invention provides a computer-readable storage medium storing at least one executable instruction that, when executed on an IGBT device lifetime extension device / apparatus, causes the IGBT device lifetime extension device / apparatus to perform the IGBT device lifetime extension method in any of the above method embodiments.

[0068] The executable instructions can be used to enable the device / app that extends the lifespan of the IGBT device to execute the method provided in the above method embodiment. The implementation principle and technical effect are similar, and will not be described in detail here.

[0069] Furthermore, all information to be extracted in this application was obtained with the user's permission or consent; that is, when this application is applied to a specific product or technology, user permission is required to obtain and process the relevant data, and the processing of the relevant data must comply with the relevant laws, regulations and regulatory standards of the relevant countries and regions.

[0070] The algorithms or displays provided herein are not inherently related to any particular computer, virtual system, or other device. Furthermore, the embodiments of this invention are not directed to any particular programming language.

[0071] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of the invention may be practiced without these specific details. Similarly, for the sake of brevity and to aid in understanding one or more aspects of the invention, in the description of exemplary embodiments of the invention above, various features of the embodiments are sometimes grouped together in a single embodiment, figure, or description thereof. The claims, which follow the detailed description, are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of the invention.

[0072] Those skilled in the art will understand that the modules in the device of the embodiment can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiment can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components, except that at least some of such features and / or processes or units are mutually exclusive.

[0073] It should be noted that the above embodiments are illustrative of the invention and not restrictive, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names. The steps in the above embodiments, unless otherwise specified, should not be construed as limiting the order of execution.

Claims

1. A life extension method of an IGBT device, characterized by, The method comprises: determining a health index of the IGBT device according to a calibration parameter corresponding to the IGBT device and a measured parameter; determining a compensation interval in which the health index is located, and determining a compensation strategy based on the compensation interval; compensating a driving parameter of the IGBT device through the compensation strategy, so as to prolong the service life of the IGBT device based on the compensated driving parameter.

2. The method of claim 1, wherein, The method comprises: obtaining a calibration parameter and a measured parameter corresponding to each target point of the IGBT device in a target period, wherein the calibration parameter comprises a target calibration saturation voltage drop amount, and the measured parameter comprises a target measured saturation voltage drop amount; calculating a voltage drop error value corresponding to each target point according to a difference between the target calibration saturation voltage drop amount and the target measured saturation voltage drop amount; determining a health index of the IGBT device according to the voltage drop error value corresponding to each target point.

3. The method of claim 2, wherein, The method comprises: collecting a calibration parameter mapping relationship corresponding to the IGBT device in a bench calibration environment, wherein the calibration parameter mapping relationship comprises a mapping relationship among a calibration gate drive voltage, a calibration junction temperature, a calibration collector current and a calibration saturation voltage drop amount; collecting a measured parameter mapping relationship corresponding to the IGBT device in a measured environment, wherein the measured parameter mapping relationship comprises a mapping relationship among a measured gate drive voltage, a measured junction temperature, a measured collector current and a measured saturation voltage drop amount; determining a target gate drive voltage, a target junction temperature and a target collector current corresponding to each target point in a target period, and finding a target calibration saturation voltage drop amount from the calibration parameter mapping relationship according to the target gate drive voltage, the target junction temperature and the target collector current; finding a target measured saturation voltage drop amount corresponding to each target point from the measured parameter mapping relationship according to the target gate drive voltage, the target junction temperature and the target collector current.

4. The method of claim 2, wherein, The method comprises: calculating a root mean square error value according to the voltage drop error value corresponding to each target point; calculating a voltage drop average value of the target calibration saturation voltage drop amount corresponding to each target point; calculating a health index of the IGBT device according to the root mean square error value and the voltage drop average value.

5. The method of claim 4, wherein, The method comprises: determining a rated collector current and a reference junction temperature corresponding to the IGBT device; calculating a target coefficient according to the target collector current, the rated collector current, a current weighting coefficient, the target junction temperature, the reference junction temperature and a temperature weighting coefficient; calculating a root mean square error value according to the voltage drop error value corresponding to each target point and the target coefficient.

6. The method according to any one of claims 1 to 5, wherein, The method comprises: determining a compensation interval in which the health degree index is located; in a case where the compensation interval is a first interval, determining that the compensation strategy is not compensating the gate drive voltage of the IGBT device, the first interval being an interval in which the IGBT device is in a healthy state or a good state; in a case where the compensation interval is a second interval, determining that the compensation strategy is linearly compensating the gate drive voltage of the IGBT device based on a preset compensation model, the second interval being an interval in which the IGBT device is in an early aging state or a middle aging state; in a case where the compensation interval is a third interval, determining that the compensation strategy is compensating the gate drive voltage of the IGBT device according to a preset compensation value, the third interval being an interval in which the IGBT device is in a serious aging state.

7. The method according to any one of claims 1 to 5, wherein The compensation of the driving parameter of the IGBT device through the compensation strategy to prolong the service life of the IGBT device based on the compensated driving parameter further comprises: monitoring a working voltage pulse peak corresponding to the IGBT device after the compensation of the driving parameter of the IGBT device through the compensation strategy; if the compensated driving parameter is higher than a first preset threshold or the working voltage pulse peak is higher than a second preset threshold, returning to the step of determining the compensation interval in which the health degree index is located and determining the compensation strategy based on the compensation interval until the new driving parameter is lower than the first preset threshold and the new working voltage pulse peak is lower than the second preset threshold.

8. A life extension device for an IGBT device, characterized by, The device comprises: an index determination module configured to determine a health degree index of an IGBT device according to a calibration parameter and a measured parameter corresponding to the IGBT device; a strategy determination module configured to determine a compensation interval in which the health degree index is located and determine a compensation strategy based on the compensation interval; a parameter compensation module configured to compensate a driving parameter of the IGBT device through the compensation strategy to prolong the service life of the IGBT device based on the compensated driving parameter.

9. A life extension device for an IGBT device, characterized by, comprise: a processor, a memory, a communication interface and a communication bus, the processor, the memory and the communication interface completing communication with each other through the communication bus; the memory is used to store at least one executable instruction, and the executable instruction makes the processor execute the operations of the service life prolonging method of the IGBT device according to any one of claims 1-7.

10. A computer-readable storage medium, characterized in that, The storage medium has at least one executable instruction stored therein, and the executable instruction makes the IGBT device service life prolonging equipment / device execute the operations of the IGBT device service life prolonging method according to any one of claims 1-7 when the IGBT device service life prolonging equipment / device runs.

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