Integrated driving chip for rapid wavelength tuning of semiconductor laser array and driving method of integrated driving chip

Abstract

The invention provides an integrated driving chip for rapid wavelength tuning of a semiconductor laser array and a driving method of the integrated driving chip, and relates to the field of semiconductor optoelectronic integrated circuits. The driving chip comprises a packaging body, and the packaging body comprises a VCC pin, a VSS pin, an SW pin, a DACin pin and an Iout pin, wherein the SW pin, the DACin pin and the Iout pin are respectively provided with eight paths of driving currents. The packaging body comprises a current size setting module which uses a DACin pin to input a level so as to set a laser driving current; the high-speed switch switching module is used for switching laser channels by using an SW pin; and the multi-stage current mirror amplification module is used for converting and amplifying the final driving current by utilizing a preceding-stage level, and outputting the final driving current by an Iout pin. The tunable laser has important significance in improving the tuning range of the tunable laser, increasing the number of channels, shortening the channel switching time and reducing the size and the cost of the tunable laser.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic integrated circuits, and more particularly to an integrated driver chip and its driving method for rapid wavelength tuning of semiconductor laser arrays, applicable to broadband spectral scanning, optical communication and optical sensing systems. Background Technology

[0002] The rapid development of emerging technologies such as cloud computing, big data, and AI has driven a surge in data traffic and an upgrade in processing speed, which places higher demands on the performance of semiconductor lasers, the core light source. Among these, the accuracy of the channel wavelength directly determines the channel spacing and signal-to-noise ratio of signal transmission, while the channel switching speed restricts the reconfiguration efficiency and latency of the system. Together, these two factors constitute the key performance indicators that determine the throughput, energy efficiency, and reliability of the entire system.

[0003] The key to achieving high-speed and stable operation of lasers lies in their front-end driving circuitry. Traditional semiconductor laser arrays achieve wavelength switching through current tuning, and existing driving circuits are mostly built with discrete components, often suffering from slow switching speed, low integration, high power consumption, low reliability, and poor temperature stability. Especially in multi-channel parallel arrays, channel switching is prone to crosstalk, and inaccurate current amplification leads to wavelength drift and spectral instability. Therefore, there is an urgent need to conduct research on on-chip integrated ultrafast driving chips for semiconductor laser arrays.

[0004] The design and fabrication of this type of driver chip faces three main challenges: First, crosstalk and signal integrity issues are easily generated when multi-channel lasers switch randomly and rapidly; second, the operating current and transparent current required by each laser unit are different, making it difficult for traditional drivers to control them independently and accurately; and third, in order to achieve nanosecond-level wavelength reconstruction, high-density integration of high-speed, high-current drive circuits is required within a limited area. Summary of the Invention

[0005] Purpose of the invention: To address the shortcomings of existing technologies, this invention proposes an integrated driver chip and its driving method for rapid wavelength tuning of semiconductor laser arrays. This enables the miniaturization of the driven semiconductor light source module in systems such as optical sensing, providing fast, continuous, and stable wavelength scanning. Furthermore, the scanning wavelength, channels, and operating time can be designed according to target requirements.

[0006] In a first aspect, the present invention proposes an integrated driver chip for rapid wavelength tuning of semiconductor laser arrays, which is designed with SW1~SW8 pins, DACin1~DACin8 pins, and Iout1~Iout8 pins. The driver chip adopts a series-parallel combined working mode and integrates a current magnitude setting module, a multi-stage current mirror amplification module, and a high-speed switching module. in: SW1~SW8 are channel switching input pins. When a single pin is connected to a high level and the other pins are at a low level, the corresponding laser channel is turned on and emits light within a specified wavelength range. DACin1~DACin8 are analog voltage signal input pins. Iout1~Iout8 are drive current output pins, which are connected to the corresponding channels of the laser array and different current ranges correspond to different lasing wavelengths. The current setting module includes voltage-to-current conversion modules V-I1~V-I8, which are used to convert the analog voltage signals received by the DACin1~DACin8 pins into analog current signals; The multi-stage current mirror amplification module is used to amplify the analog current signal to the operating current required by the laser array, and output it through the Iout1~Iout8 pins; The high-speed switch switching module is used to receive digital signals from pins SW1 to SW8 and implement internal structure reset switch control in four channels.

[0007] As a preferred embodiment, the current setting module also includes a sampling switch with a transmission gate structure. After the laser drive current level setting value DACin and the channel switching signal SW enter the chip, the level value is first sampled by the sampling switch and then the signal is converted by the voltage-to-current conversion module.

[0008] As a preferred solution, the four-way reset switch control of the high-speed switch switching module is specifically as follows: The first control channel switching signals SW1~SW8 sample the level setting values ​​DACin1~DACin8 (SAMPLING1~SAMPLING8). The second control level setting values ​​DACin1~DACin8 are reset before the voltage-to-current conversion modules V-I1~V-I8; Reset after the third-channel control voltage-current conversion module V-I1~V-I8 and before the first-stage current mirror amplification module; The fourth channel controls the reset before the fourth-stage current mirror amplification module and before the final drive current output.

[0009] As a preferred embodiment, the integrated driver chip also includes peripheral circuitry consisting of an FPGA main control chip, a digital-to-analog converter (DAC), a voltage comparator (COMP), a temperature control circuit, a thermistor (NTC), a thermoelectric cooler (TEC), and a photomultiplier amplifier circuit. The FPGA main control chip is connected to the DAC, COMP, and temperature control circuit respectively. The DAC is used to convert the digital signal output by the FPGA into the level setting value DACin of the laser drive current. The COMP is used to convert the LVDS digital differential signal output by the FPGA into the laser channel switching signal SW. The temperature control circuit receives the laser array temperature data collected by the NTC and feeds it back to the FPGA. The FPGA outputs the temperature setting data to the temperature control circuit through an incremental PID algorithm. The temperature control circuit drives the TEC to heat or cool the laser array to maintain temperature stability. The optical multiplexing amplifier circuit is used to provide stable drive current for the Y-multiplexer and the semiconductor optical amplifier SOA of the laser array.

[0010] As a preferred solution, the multi-stage current mirror amplification module achieves stable amplification from nanoampere-level reference current to milliampere-level drive current through an on-chip integrated high-precision current mirror network, and the control signals of each amplification unit within the module are latched and distributed on the same clock edge through integrated sequential logic circuits.

[0011] As a preferred solution, the high-speed switch module achieves a sub-nanosecond reset speed through a single-signal multi-node parallel control method.

[0012] As a preferred embodiment, the integrated driver chip also includes a VCC pin and a VSS pin for chip power supply and grounding, respectively.

[0013] Based on the integrated driver chip disclosed in the first aspect and its preferred embodiments above, the second aspect of the present invention proposes a driving method comprising the following steps: Step 1: Input the analog voltage signal output by the DAC to the DACin1~DACin8 pins of the chip, and at the same time input the digital signal amplified by the preamplifier COMP to the SW1~SW8 pins. Step 2: The analog voltage signals of the DACin1 to DACin8 pins are converted into analog current signals through the internal voltage-to-current conversion modules V-I1 to V-I8 of the chip. Step 3: The analog current signal is amplified to the operating current required by the laser array through the four-stage current mirror gain amplification module CURREN MIRROR1~CURREN MIRROR8. Step 4: The internal reset switch of the chip is controlled by the quad reset switch module SWITCH1~SWITCH8, and the amplified analog current signal is input to the corresponding 8 channels of the laser array through the Iout1~Iout8 pins. Step 5: Apply channel switching signals to each channel of the laser array in ascending order of wavelength. The lasing wavelength ranges of adjacent lasers retain a predetermined nanometer-length overlap region to achieve continuous and uninterrupted broadband spectral scanning.

[0014] In a third aspect, the present invention provides a programmable memory externally connected to the driver chip disclosed in the first aspect. The memory stores firmware, and when the programmable memory executes the firmware, it implements the driving method disclosed in the second aspect.

[0015] In a fourth aspect, the present invention provides a firmware product comprising a firmware program that, when executed by a processor, implements the driving method disclosed in the second aspect.

[0016] Compared with the prior art, the present invention has the following beneficial effects: (1) The number of current sources designed in this invention can be designed according to the parameters of the driven semiconductor laser array. Only one chip is needed to realize the sequential scanning of the m×n matrix semiconductor laser array, which is beneficial to reduce the size of the optical module and the corresponding optical sensing system, reduce the number of components, realize miniaturization, and is suitable for more high-speed, high-precision, and micro-precision equipment optical sensing fields.

[0017] (2) The present invention integrates the discrete devices for multi-channel amplification and channel switching required for the front end of conventional semiconductor laser arrays, which has the advantage of significantly reducing the system size. Specifically, it compresses the macroscopic system consisting of multiple discrete driver chips, logic control chips and passive devices distributed on the printed circuit board (PCB) in the traditional scheme into a single chip at the millimeter level, thus achieving an order-of-magnitude reduction in system size.

[0018] (3) The present invention protects the sensitive bias and signal path inside the chip through a rigorous and reasonable layout design. Its ability to resist power supply noise and substrate coupling interference is far stronger than that of discrete components exposed in a complex PCB environment, so that it can output a drive current with extremely low ripple and extremely high stability when working at high speed.

[0019] (4) This invention uses a switching control method based on high-speed electrical switches. It avoids the use of high-speed DAC designs. Although the high and low currents required for each channel drive will be different in actual operation, for a given semiconductor laser, the required high and low current values ​​for each channel are fixed. Therefore, once the laser array is determined, the required turn-on / turn-off current values ​​for each channel are also determined. The laser drive current can be given a reference value by a low-speed DAC to set the high and low current values ​​of the drive output. Switching between the turn-on / turn-off (high and low) currents only requires switching between the reference values ​​set by the DAC using a high-speed switch under the control of a high-speed digital signal, thereby achieving rapid switching of the output current and significantly reducing design complexity and the number of high-speed interfaces.

[0020] (5) The multi-stage current mirror amplification module designed in this invention achieves stable amplification from nanoampere-level reference current to milliampere-level drive current through an on-chip integrated high-precision current mirror network. Its input and output impedances are precisely controlled by the chip manufacturing process, avoiding impedance mismatch problems caused by batch differences and temperature drift of discrete components. The control signals of each amplification unit in the module are precisely latched and distributed at the same clock edge through integrated timing logic circuits, eliminating the timing skew between channels caused by the different PCB trace delays of discrete current sources, and ensuring the synchronization and accuracy of laser array wavelength switching.

[0021] (6) The high-speed switching module designed in this invention uses the SW signal to perform quadruple repositioning switching on the internal logic of the chip, enabling faster and more synchronous switching and reset of the semiconductor laser. Through this single-signal multi-node parallel control method, the instantaneous short-circuit current or voltage overshoot caused by the difference in switching timing during multi-channel switching is effectively avoided, achieving an ultra-fast reset speed on the sub-nanosecond scale, and directly improving the wavelength tuning limit frequency. Attached Figure Description

[0022] Figure 1 This is a functional schematic diagram of the monolithic integrated driver chip of the present invention.

[0023] Figure 2 This is a flowchart illustrating the structure of the monolithic integrated driver chip of this invention within the light source module.

[0024] Figure 3 This is a flowchart illustrating the structure of the discrete current source in the light source module compared to the present invention.

[0025] Figure 4 This is a pin diagram of the monolithic integrated driver chip of the present invention.

[0026] Figure 5 This is a schematic diagram of a matrix semiconductor laser structure to which this invention applies.

[0027] Figure 6 This is a swept spectrum of a matrix semiconductor laser to which this invention applies.

[0028] Figure 7 This is a schematic diagram of the output current and switching time of a single channel of the monolithic integrated driver chip of the present invention. Detailed Implementation

[0029] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the invention. However, it will be apparent to those skilled in the art that the invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid obscuring the invention.

[0030] like Figure 1 and 2 As shown, this embodiment discloses an integrated driver chip for rapid wavelength tuning of semiconductor laser arrays. The chip has a length of 3239.4 μm and a width of 2459.4 μm, and is fabricated using SMIC 180nm process. It can be used to drive m×n semiconductor laser arrays, where m is the number of parallel waveguides and n is the number of lasers connected in series on each waveguide, i.e., the number of current sources. The chip is designed and fabricated with an example of driving n=8.

[0031] like Figure 2 As shown, the monolithically integrated ultrafast driver chip includes a total of 26 pins, namely VCC pin, VSS pin, SW1 pin, DACin1 pin, Iout1 pin, SW2 pin, DACin2 pin, Iout2 pin, SW3 pin, DACin3 pin, Iout3 pin, SW4 pin, DACin4 pin, Iout4 pin, SW5 pin, DACin5 pin, Iout5 pin, SW6 pin, DACin6 pin, Iout6 pin, SW7 pin, DACin7 pin, Iout7 pin, SW8 pin, DACin8 pin, and Iout8 pin.

[0032] Among them, VCC and VSS are input pins, used for chip power supply and grounding respectively; SW1 to SW8 are input pins used for channel switching of the semiconductor laser array, thereby realizing broadband dynamic spectral scanning. When one of these pins receives a high level while the others are low, the laser channel controlled by that pin is turned on, emitting light of a specified wavelength range. DACin1 to DACin8 are input pins, into which the front-end circuit inputs analog voltage signals; Iout1 to Iout8 are output pins, connected to the corresponding pins of the semiconductor laser array, outputting the required drive current, with different current ranges corresponding to different lasing wavelengths.

[0033] like Figure 1 As shown, the monolithically integrated ultrafast driver chip further employs a combined series-parallel operating mode: First, the analog voltage signal output by the chip's pre-amplifier DAC conversion module is input to pins DACin1 to DACin8, and the digital signal amplified by the pre-amplifier COMP is input to pins SW1 to SW8. Secondly, regarding the current setting module, the analog voltage signals received by the DACin1 to DACin8 pins are converted into analog current signals by the voltage-to-current conversion modules VI 1 to V-I8 inside the driver chip, which facilitates subsequent signal gain amplification. Regarding the multi-stage current mirror amplification module, the analog current signal is amplified to the operating current required by the semiconductor laser array by the four-stage current mirror gain amplification modules CURREN MIRROR 1 to CURREN MIRROR 8 after the voltage-to-current conversion module. Regarding the high-speed switching module, the internal quadruple reset switch modules SWITCH 1 to SWITCH 8 of the driver chip divide the digital signals received by the SW1 to SW8 pins into four parts to control the internal structure for reset switching: The first part is the control of the sampling of the level setting values ​​DACin1 to DACin8 (SAMPLING 1 to SAMPLING 8) after the channel switching signals SW1 to SW8 enter the chip; the second part is the reset switch control of the level setting values ​​DACin1 to DACin8 before the voltage-to-current conversion structure VI 1 to VI 8; the third part is the reset switch control after the voltage-to-current conversion structure VI 1 to VI 8 and before the first-stage current mirror amplification structure CURREN MIRROR 1 to CURREN MIRROR 8; the fourth part is the reset switch before the fourth-stage current mirror amplification structure CURREN MIRROR 1 to CURREN MIRROR 8, i.e., before the final drive current output. This multi-reset switch structure design ensures high-speed control of the channel switching signals. Specifically, the current setting module includes a transmission gate structure, namely a sampling switch. When the laser drive current level setting value DACin and the channel switching signal SW enter the chip, the level value will pass through the sampling switch controlled by the channel switching signal, and then be converted from voltage to current and amplified and output by a multi-stage current mirror.

[0034] Finally, the analog current signal obtained after conversion and amplification by the three modules is input to the eight channels corresponding to the semiconductor laser array through Iout1 to Iout8 under the control of multiple reset switches, for lasing of lasers in different wavelength ranges, and finally obtains the scanning broadband spectrum. Specifically, the lasing wavelength ranges of every two adjacent semiconductor lasers overlap by approximately 0.5 nm to prevent poor edge wavelength performance when a single laser is lased, ensuring a smooth and flat spectrum of the laser array without missing wavelengths, thus enabling the tunable module to output a continuous spectrum.

[0035] More specifically, when applying the scanning current, channel switching signals are applied to all lasers sequentially in ascending order of wavelength, resulting in good repeatability.

[0036] More specifically, Figure 5 , 6 These are a schematic diagram of a matrix semiconductor laser structure applicable to this invention, and a swept spectrum diagram.

[0037] like Figure 3 As shown, the peripheral circuitry of the monolithically integrated ultrafast drive chip further includes an FPGA main control chip, a digital-to-analog converter (DAC), a voltage comparator (COMP), a temperature control circuit, a thermistor (NTC), a thermoelectric cooler (TEC), and an optical wave amplification circuit. The FPGA main control chip is directly connected to the DAC, COMP, and the temperature control circuit in the temperature-controlled laser module: the DAC is used to convert the generated digital signal into the laser drive current level setting value DACin; the COMP is used to stably convert the generated LVDS digital differential signal into the laser channel switching signal SW; the temperature control circuit receives the actual temperature data of the laser array monitored in real time by the NTC, sends it to the FPGA, and uses an incremental PID algorithm to feed back the temperature setting data to the temperature control circuit; the TEC receives and processes the signal to heat / cool the laser array to control its temperature to stabilize at the set value; the optical wave amplification circuit is used to provide a stable current for the Y-wave multiplexing and the semiconductor optical amplifier (SOA) of the semiconductor laser array.

[0038] The monolithically integrated ultrafast driver chip disclosed in this embodiment is designed for rapid wavelength tuning of semiconductor laser arrays. The number of current sources can be designed according to the parameters of the driven semiconductor laser array. Only one chip is needed to realize the sequential scanning of an m×n matrix semiconductor laser array, which helps to reduce the size of the optical module and the corresponding optical sensing system, reduce the number of components, and achieve miniaturization. It is suitable for optical sensing fields of more high-speed, high-precision, and micro-precision equipment.

[0039] like Figure 3 and 4 As shown, the monolithically integrated ultrafast driver chip for rapid wavelength tuning of semiconductor laser arrays integrates the discrete components for multi-channel amplification and channel switching required at the front end of conventional semiconductor laser arrays. It has the advantage of significantly reducing the system size. Specifically, it compresses the macroscopic system consisting of multiple discrete driver chips, logic control chips and passive components distributed on a printed circuit board (PCB) in traditional solutions into a single chip at the millimeter level, achieving an order-of-magnitude reduction in system size.

[0040] Furthermore, the monolithically integrated ultrafast driver chip for rapid wavelength tuning of semiconductor laser arrays protects sensitive bias and signal paths inside the chip through a rigorous and reasonable layout design. Its ability to resist power supply noise and substrate coupling interference is far stronger than that of discrete components exposed in complex PCB environments, thus enabling it to output drive current with extremely low ripple and extremely high stability when operating at high speeds.

[0041] This embodiment discloses a monolithically integrated ultrafast driver chip for rapid wavelength tuning of semiconductor laser arrays. The multi-stage current mirror amplification module achieves stable amplification from nanoampere-level reference current to milliampere-level drive current through an on-chip integrated high-precision current mirror network. Its input and output impedances are precisely controlled by the chip manufacturing process, avoiding impedance mismatch problems caused by batch differences and temperature drift of discrete components. The control signals of each amplification unit within the module are precisely latched and distributed on the same clock edge through integrated timing logic circuits, eliminating the inter-channel timing skew caused by inconsistent PCB trace delays of discrete current sources, and ensuring the synchronization and accuracy of laser array wavelength switching.

[0042] This embodiment discloses a monolithically integrated ultrafast driver chip for rapid wavelength tuning of semiconductor laser arrays. The designed high-speed switching module utilizes the SW signal to perform quadruple repositioning switching of the chip's internal logic, enabling faster and more synchronous switching and reset of the semiconductor laser. This single-signal, multi-node parallel control method effectively avoids instantaneous short-circuit current or voltage overshoot caused by switching timing differences during multi-channel switching, achieving sub-nanosecond-level ultrafast reset speeds and directly improving the wavelength tuning limit frequency.

[0043] Specifically, such as Figure 7 As shown, according to the parameter requirements of the laser array and the tunable module in this embodiment, the high-speed drive chip can output a maximum current of more than 150mA, and a threshold current of 30mA to maintain the normal operation of the laser. More specifically, the switching time of the laser array channel is represented by the rising edge of the turn-on process and the falling edge of the turn-off process. High-speed driver chips can control the time to within 12ns, and the larger the required drive current, the shorter the switching time.

[0044] The integrated driver chip disclosed in this embodiment enables the miniaturization of the driven semiconductor light source module in systems such as optical sensing, provides fast, continuous, and stable wavelength scanning, and the scanning wavelength, channels, and working time can be designed according to target requirements.

[0045] This invention provides an integrated driver chip for rapid wavelength tuning of semiconductor laser arrays. Many methods and approaches exist for implementing this technical solution; the above description is merely a preferred embodiment of the invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of this invention, and these improvements and modifications should also be considered within the scope of protection of this invention. All components not explicitly stated in this embodiment can be implemented using existing technologies.

Claims

1. An integrated driving chip for wavelength rapid tuning of a semiconductor laser array, characterized by, The driving chip is designed with SW1-SW8 pins, DACin1-DACin8 pins and Iout1-Iout8 pins, and adopts a working mode of combination of series connection and parallel connection inside the driving chip, and is integrated with a current size setting module, a multi-stage current mirror amplification module and a high-speed switch switching module. Wherein: The SW1-SW8 pins are channel switching input pins, when a single pin is connected to a high level and the remaining pins are low levels, the corresponding laser channel is opened and emits light of a specified wavelength range; the DACin1-DACin8 pins are analog voltage signal input pins; and the Iout1-Iout8 pins are driving current output pins, which are connected to the corresponding channels of the laser array and correspond to different lasing wavelengths in different current ranges. The current size setting module includes voltage-to-current conversion modules V-I1-V-I8, which are used to convert the analog voltage signals received by the DACin1-DACin8 pins into analog current signals. The multi-stage current mirror amplification module is used to amplify the analog current signals to the working current required by the laser array and output by the Iout1-Iout8 pins. The high-speed switch switching module is used to receive digital signals of the SW1-SW8 pins and realize four-way internal structure reset switch control.

2. The integrated driver chip of claim 1, wherein, The current size setting module further includes a sampling switch of a transmission gate structure, and after the laser driving current level setting value DACin and the channel switching signal SW enter the chip, the level value is first sampled by the sampling switch and then converted into a signal by the voltage-to-current conversion module.

3. The integrated driver chip of claim 1, wherein, The four-way reset switch control of the high-speed switch switching module is specifically as follows: The first control controls the sampling SAMPLING1-SAMPLING8 of the level setting value DACin1-DACin8 by the channel switching signal SW1-SW8; The second control controls the reset of the level setting value DACin1-DACin8 before the voltage-to-current conversion module V-I1-V-I8; The third control controls the reset after the voltage-to-current conversion module V-I1-V-I8 and before the first-stage current mirror amplification module; The fourth control controls the reset before the fourth-stage current mirror amplification module and before the final driving current output.

4. The integrated driver chip of claim 1, wherein, Further comprising a peripheral circuit composed of an FPGA master control chip, a digital-to-analog converter DAC, a voltage comparator COMP, a temperature control circuit, a temperature-sensitive resistor NTC, a thermoelectric cooler TEC and a light combination wave amplification circuit; The FPGA master control chip is connected with the DAC, the COMP and the temperature control circuit respectively; the DAC is used to convert the digital signal output by the FPGA into the level setting value DACin of the laser driving current; the COMP is used to convert the LVDS digital differential signal output by the FPGA into the laser channel switching signal SW; the temperature control circuit receives the temperature data of the laser array collected by the NTC and feeds back to the FPGA, the FPGA outputs the temperature setting data to the temperature control circuit through the incremental PID algorithm, and the temperature control circuit drives the TEC to heat or cool the laser array to maintain temperature stability; and the light combination wave amplification circuit is used to provide stable driving current for the Y combination wave of the laser array and the semiconductor optical amplifier SOA.

5. The integrated driver chip of claim 1, wherein, The multi-stage current mirror amplification module realizes stable amplification of nano-ampere reference current to milli-ampere driving current through high-precision current mirror network integrated on chip, and the control signals of each amplification unit in the module are latched and distributed at the same clock edge through integrated timing logic circuit.

6. The integrated driver chip of claim 1, wherein, The high-speed switch module realizes sub-nanosecond reset speed through single-signal multi-node parallel control mode.

7. A driving method of the integrated driving chip according to any one of claims 1 to 6, characterized by, The method comprises the following steps: Step 1, input the analog voltage signal output by the DAC into the DACin1~DACin8 pins of the chip, and input the digital signal amplified by the previous COMP into the SW1~SW8 pins; Step 2, convert the analog voltage signal of the DACin1~DACin8 pins into an analog current signal through the internal voltage-current conversion module V-I1~V-I8 of the chip; Step 3, amplify the analog current signal to the working current required by the laser array through the four-stage current mirror gain amplification module CURREN MIRROR1~CURREN MIRROR8; Step 4, control the internal reset switch of the chip through the four reset switch modules SWITCH1~SWITCH8, and input the amplified analog current signal into the corresponding 8 channels of the laser array through the Iout1~Iout8 pins; Step 5, sequentially apply channel switching signals to each channel of the laser array in the order of wavelength from small to large, and the adjacent laser wavelength range retains a predetermined nanometer length of overlapping area, realizing continuous and non-missing wideband spectrum scanning.

8. A programmable memory, characterized by The programmable memory has a firmware program stored thereon, and the programmable memory implements the driving method of claim 7 when executing the firmware program.

9. The programmable memory of claim 8, wherein, The programmable memory is externally connected to the integrated driving chip of any one of claims 1 to 6.

10. A firmware program product, the firmware program product comprising a firmware program, characterized by The firmware program is executed by the processor to implement the driving method of claim 7.

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