Method for manufacturing semiconductor device and semiconductor manufacturing apparatus

Abstract

The embodiment of the invention relates to a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus. In a method of manufacturing a semiconductor device according to an embodiment, a semiconductor substrate has a first surface including a pattern region in which a device pattern is provided, a second surface on the opposite side of the first surface, and an inclined portion located at the peripheral edges of the first surface and the second surface, and an adhesive layer is continuously formed on the first surface and the inclined portion. The support substrate has a third surface including a release layer region in which a release layer is formed, and the semiconductor substrate and the support substrate are bonded to each other such that the first surface and the third surface are bonded to each other via an adhesive layer, and in a state where the semiconductor substrate and the support substrate are bonded to each other via the adhesive layer, the semiconductor substrate and the support substrate are bonded to each other via the adhesive layer. At least the inclined portion and a portion of the adhesive layer formed on the inclined portion are removed from the semiconductor substrate.

Description

[0001] Related applications

[0002] This application claims priority to Japanese Patent Application No. 2024-161488 (filed on September 18, 2024). This application incorporates all contents of the basic application by reference to that basic application. Technical Field

[0003] Embodiments of the present invention relate to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus. Background Technology

[0004] As a technology to support the thinning of semiconductor wafers, a method for manufacturing a semiconductor device is proposed, in which a glass substrate serving as a support substrate and a semiconductor wafer serving as a semiconductor substrate are bonded together via an adhesive layer composed of an adhesive.

[0005] In conventional semiconductor device manufacturing methods, adhesives adhering to the inclined portions of the semiconductor wafer's periphery may peel off in a burr-like manner, for example, when the back side of the semiconductor wafer is ground during a thinning process after bonding. This peeled adhesive residue remains within the semiconductor manufacturing apparatus and may further contribute to problems such as buildup in the filters of the circulation system. Summary of the Invention

[0006] A method for manufacturing a semiconductor device according to one embodiment is characterized in that a semiconductor substrate has a first surface including a patterned area having a device pattern, a second surface opposite to the first surface, and an inclined portion located at the periphery of the first surface and the second surface, and an adhesive layer is continuously formed on the first surface and the inclined portion, a support substrate has a third surface including a release layer area having a release layer formed thereon, the semiconductor substrate and the support substrate are bonded together such that the first surface and the third surface are bonded together via the adhesive layer, and in the state where the semiconductor substrate and the support substrate are bonded together via the adhesive layer, at least the inclined portion and the portion of the adhesive layer formed on the inclined portion are removed from the semiconductor substrate.

[0007] According to one embodiment, a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus can be provided, which can suppress the peeling of the peripheral portion of the adhesive used to bond a semiconductor substrate and a support substrate during the manufacturing process of the semiconductor device. Attached Figure Description

[0008] Figure 1 This is a diagram illustrating an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment.

[0009] Figure 2 It means through Figure 1The cross-sectional view shows an example of a bonding structure formed by bonding a semiconductor wafer and a support substrate using a semiconductor manufacturing apparatus.

[0010] Figure 3 This is a cross-sectional view illustrating an example of the process of forming a device pattern on a semiconductor wafer in a semiconductor device manufacturing method according to an embodiment.

[0011] Figure 4 This is a cross-sectional view illustrating an example of a step in a semiconductor device manufacturing method according to an embodiment, in which a release layer is formed on a support substrate.

[0012] Figure 5 This is a cross-sectional view illustrating an example of a bonding process in a semiconductor device manufacturing method according to an embodiment, in which a semiconductor wafer and a support substrate are bonded together.

[0013] Figure 6 This is a cross-sectional view illustrating an example of a step in a semiconductor device manufacturing method according to an embodiment, where a region containing a tilted portion of a semiconductor wafer is trimmed.

[0014] Figure 7 It means to continue Figure 6 A cross-sectional view of an example of a step in the manufacturing method of a semiconductor device according to an embodiment of the process of trimming a region containing a tilted portion of a semiconductor wafer.

[0015] Figure 8 It means Figure 7 The diagram shows a cross-sectional view of an example of an end portion formed by bonding a semiconductor wafer and a support substrate together with an adhesive after the trimming process is completed.

[0016] Figure 9 This is a diagram illustrating an example of the process flow of a semiconductor device manufacturing method according to an embodiment.

[0017] Figure 10 This is a cross-sectional view illustrating an example of a step in the manufacturing method of a semiconductor device according to a first modified example, namely, trimming a region containing a tilted portion of a semiconductor wafer.

[0018] Figure 11 This is a cross-sectional view of an example of a step in the manufacturing method of a semiconductor device according to a second variation, which involves trimming a region containing a tilted portion of a semiconductor wafer.

[0019] Figure 12 This is a cross-sectional view of an example of a step in the manufacturing method of a semiconductor device according to a third variation, which involves trimming a region containing a tilted portion of a semiconductor wafer.

[0020] Explanation of reference numerals in the attached figures

[0021] 100 Semiconductor Manufacturing Equipment

[0022] T workbench

[0023] B Grinding tool

[0024] CON Control Department

[0025] WG Fitting Construction

[0026] W Semiconductor substrate

[0027] G Supporting substrate

[0028] Q Adhesive layer Detailed Implementation

[0029] Hereinafter, a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor apparatus according to embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments.

[0030] (Implementation Method)

[0031] As described above, in the manufacturing method of semiconductor devices, there is a thinning process in which a semiconductor substrate is bonded to a thicker support substrate using an adhesive and then ground. By bonding it to a thicker support substrate, the flatness of the semiconductor wafer can be well maintained during grinding, and the semiconductor wafer can be uniformly thinned. After the thinned semiconductor substrate is held in place by the support substrate, the necessary processing, such as circuit pattern formation, is performed on the ground surface. Then, it is peeled off from the support substrate and diced into a chip.

[0032] In this embodiment, an example of a semiconductor manufacturing apparatus used in a thinning process for manufacturing a semiconductor device, which is a thinning process for a semiconductor substrate, and an example of a semiconductor substrate that is to be ground will be described, and an example of a manufacturing method for a semiconductor device using the semiconductor manufacturing apparatus will be described.

[0033] [Semiconductor manufacturing equipment]

[0034] Figure 1 This is a diagram illustrating an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. Figure 1 The semiconductor manufacturing apparatus 100 shown is an apparatus used in the manufacturing process of a semiconductor device, particularly in the thinning process of thinning a semiconductor substrate W. Furthermore, Figure 2 It means through Figure 1 The cross-sectional view shows an example of a bonding structure formed by bonding a semiconductor wafer and a support substrate using a semiconductor manufacturing apparatus.

[0035] For example, Figure 1As shown, the semiconductor manufacturing apparatus 100 includes a worktable T, a grinding tool B, and a control unit CON.

[0036] [Workbench]

[0037] The worktable T is fixed to the bonding structure WG, which is described later, by bonding the semiconductor substrate W and the support substrate G together. Figure 2 A rotating mechanism that rotates the substrate WG. The worktable T uses adsorption or the like to fix the semiconductor substrate W or support substrate G of the bonding structure WG. Furthermore, as... Figure 1 As shown, the worktable T, for example, rotates around a rotation axis R parallel to the Z direction, thereby causing the fitting structure WG, which is fixed to the worktable T and whose upper surface is parallel to the X and Y directions, to rotate around the rotation axis R.

[0038] [Grinding tool]

[0039] Grinding tool B is a grinding mechanism that grinds the end of the fitting structure WG.

[0040] [Control Department]

[0041] The control unit CON is a control mechanism that controls the rotation of the worktable T, the displacement of the grinding tool B, and the grinding action.

[0042] The control unit CON, with the fitting structure WG placed on the worktable T, controls the rotation of the worktable T, as well as the displacement and grinding action of the grinding tool, utilizing the grinding tool to... Figure 2 The portion of the inclined (bevel) portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are ground and thus removed from the semiconductor substrate W.

[0043] [Fit-fit construction]

[0044] Here, especially referring to Figure 2 Hereinafter, we will describe a detailed example of the construction of a bonding structure WG formed by bonding a semiconductor substrate W and a support substrate G, which is processed by the semiconductor manufacturing apparatus 100 as described above.

[0045] For example, Figure 2 As shown, the bonding structure WG includes a semiconductor substrate W, a support substrate G, and an adhesive layer Q. Moreover, the bonding structure WG is formed by bonding the semiconductor substrate W and the support substrate G together via the adhesive layer Q.

[0046] [Semiconductor substrate]

[0047] The semiconductor substrate W is, for example, a semiconductor wafer. Moreover, the material of the semiconductor substrate W is, for example, semiconductor materials such as silicon, sapphire, or GaAs (gallium arsenide).

[0048] For example, Figure 2 As shown, the semiconductor substrate W has a main surface, namely a first surface (surface) W1, which includes a pattern area PA having a device pattern P such as a semiconductor element, a main surface opposite to the first surface W1, namely a second surface (back surface) W2, and an inclined portion WB located at the periphery of the first surface W1 and the second surface W2.

[0049] Moreover, for example, Figure 2 As shown, an adhesive layer Q is continuously formed on the first surface W1, which includes the patterned region PA and the non-patterned region NA, and on the inclined portion WB of the semiconductor substrate W. In particular, the device pattern P of the patterned region PA is covered by the adhesive layer Q on the first surface of the semiconductor substrate W.

[0050] Moreover, for example, Figure 2 As shown, the non-patterned region NA is located between the outer periphery of the patterned region PA of the semiconductor substrate W and the region BA of the inclined portion WB. This non-patterned region NA is the region where the pattern P of semiconductor elements or other devices is not formed.

[0051] [Adhesive layer]

[0052] As mentioned above, Figure 2 As shown, the adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB of the semiconductor substrate W.

[0053] The adhesive layer Q is made of an adhesive that is soluble in organic solvents, such as an acrylic resin, a hydrocarbon resin (polycyclic olefin resin, terpene resin, petroleum resin, etc.), or a phenolic resin of the phenolic varnish type. The adhesive layer Q is formed by coating such an adhesive onto the surface of the semiconductor substrate W.

[0054] Furthermore, the bonding structure WG is formed by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G through an adhesive layer Q.

[0055] [Support substrate]

[0056] The support substrate G has the function of strengthening and supplementing the mechanical strength of the semiconductor substrate W and maintaining its flatness when the semiconductor substrate W is thinned, circuit patterned, or transported for processing.

[0057] The support substrate G is, for example, a glass substrate. However, the material of the support substrate G is not limited to glass; for example, in addition to silicon, it can also be alumina, silicon carbide, aluminum, stainless steel, resin, etc. Furthermore, the shape of the support substrate G is appropriately determined according to the shape of the supported semiconductor substrate W. Additionally, the thickness of the support substrate G is appropriately determined according to the material, the required strength, etc.

[0058] For example, Figure 2 As shown, the support substrate G has a main surface, namely the third surface (surface) G1, which includes a release layer region HA on which a release layer H is formed, a main surface, namely the fourth surface (back surface) G2, which is opposite to the third surface G1, and an end GE located at the periphery of the third surface G1 and the fourth surface G2.

[0059] [Peel-off layer]

[0060] Furthermore, a release layer H is provided in the central part of the release layer region HA on the third surface G1 of the support substrate G, which is made of a non-release resin or the like that does not show adhesion to the adhesive layer Q.

[0061] The release layer H is preferably formed in the largest possible area of ​​the semiconductor substrate W, which is attached to the surface of the support substrate G by the adhesive layer Q, and will not peel off during thinning or other processing or transport.

[0062] In particular, such as Figure 2 As shown, the semiconductor substrate W and the support substrate G are bonded together with the entire pattern area PA of the device pattern P in the first surface W1 of the semiconductor substrate W facing the release layer area HA of the release layer H in the third surface G1 of the support substrate G.

[0063] Here, as mentioned above, as Figure 2 As shown, the bonding structure WG is formed by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G through an adhesive layer Q.

[0064] In particular, such as Figure 2 As shown, the semiconductor substrate W and the support substrate G are bonded together by passing a perpendicular line M, parallel to the Z-direction of the first surface W1 and passing through the center of the first surface W1, through the center of the third surface G1 of the support substrate G. Furthermore, the range defined as the area through which the perpendicular line M passes through the center of the third surface G1 of the support substrate G is, for example, a range that allows for a deviation of approximately tens of micrometers from the desired bonding position of the semiconductor substrate W and the support substrate G. Moreover, in the above-described... Figure 1 When the semiconductor manufacturing apparatus 100 shown performs trimming on the bonding structure WG, the bonding structure WG is placed on the worktable T such that the vertical line M overlaps with the rotation axis R of the worktable T.

[0065] In addition, such as Figure 2 As shown, in the bonding structure WG, the average diameter of the semiconductor substrate W in the direction parallel to the first surface W1 (X direction) of the semiconductor substrate W is a first value d1. Furthermore, the average diameter of the support substrate G in the direction parallel to the third surface G1 (X direction) of the support substrate G is a second value d2. Moreover, the first value d1 is set to be larger than the second value d2. Furthermore, the second value d2 is set to be longer than the distance of the patterned region PA of the semiconductor substrate W in the direction parallel to the first surface W1 (X direction).

[0066] That is, in Figure 2 In the example shown, when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q, the peripheral end GE of the support substrate G, when viewed from the direction perpendicular to the first surface W1 (Z direction), is located on the periphery side of the semiconductor substrate W in the direction parallel to the first surface W1 (X direction) compared to the outer periphery of the patterned area PA of the semiconductor substrate W.

[0067] In particular, the average diameter of the region containing the non-patterned region NA and the patterned region PA, excluding the inclined portion WB of the semiconductor substrate W, in the direction parallel to the first surface W1 of the semiconductor substrate W, is a third value d3. Moreover, the aforementioned second value d2 is set to be smaller than this third value d3.

[0068] That is, when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q, when viewed from above in the direction perpendicular to the first surface W1 of the semiconductor substrate W (Z direction), the end GE of the periphery of the support substrate G is located in the non-patterned region NA between the outer periphery of the patterned region PA of the semiconductor substrate W and the region BA of the inclined portion WB in a direction parallel to the first surface W1 of the semiconductor substrate W (X, Y direction).

[0069] [Semiconductor device manufacturing method]

[0070] Next, refer to Figures 3 to 9 A method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus 100 of this embodiment, including the processing of the bonding structure WG in which the semiconductor substrate W is bonded to the surface of the support substrate G via the adhesive layer Q as described above, will be described.

[0071] here, Figure 3 This is a cross-sectional view illustrating an example of the process in a semiconductor device manufacturing method of an embodiment where a device pattern is formed on a wafer. Furthermore, Figure 4 This is a cross-sectional view illustrating an example of the step in a semiconductor device manufacturing method according to an embodiment, where a release layer is formed on a support substrate. Furthermore, Figure 5This is a cross-sectional view illustrating an example of a bonding process in the manufacturing method of a semiconductor device according to an embodiment, in which a semiconductor substrate is bonded to a support substrate. Furthermore, Figure 6 This is a cross-sectional view illustrating an example of a step in the manufacturing method of a semiconductor device according to an embodiment, where a region containing a tilted portion of a semiconductor substrate is trimmed. Furthermore, Figure 7 It means to continue Figure 6 This is a cross-sectional view of an example of a step in the manufacturing method of a semiconductor device according to an embodiment, involving trimming a region containing a tilted portion of a semiconductor substrate. Furthermore, Figure 8 It means Figure 7 The diagram shows a cross-sectional view of an example of an end portion of a semiconductor substrate and a support substrate bonded together with an adhesive after the trimming process is completed. Furthermore, Figure 9 This is a diagram illustrating an example of the process flow of a semiconductor device manufacturing method according to an embodiment.

[0072] First, for example, Figure 3 As shown, in a process prior to the thinning process, a device pattern P is formed on a semiconductor substrate W. Thus, a semiconductor substrate W having a first surface W1, a second surface W2 including a patterned area containing the device pattern P, and an inclined portion WB is prepared. Figure 9 Step S1).

[0073] On the other hand, for example, Figure 4 As shown, a release layer H is formed on a support substrate G. Thus, a support substrate G is prepared having a third surface G1, a fourth surface G2 including a release layer region HA where the release layer H is formed, and an end GE located at the periphery of the third surface G1 and the fourth surface G2. Figure 9 Step S1).

[0074] Next, an adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB of the semiconductor substrate W. Figure 9 Step S2). Furthermore, regarding the coating of the adhesive that constitutes the adhesive layer Q, a coating apparatus such as a spin coater (not shown) is used while rotating the semiconductor substrate W.

[0075] Moreover, for example, Figure 5 As shown, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB, and the support substrate G, on which the release layer H is formed, are bonded together by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G via an adhesive layer Q. Figure 9 Step S3).

[0076] As described above, the semiconductor substrate W and the support substrate G are bonded together by aligning the entire pattern area PA of the device pattern P on the first surface W1 of the semiconductor substrate W with the release layer area HA of the release layer H on the third surface G1 of the support substrate G.

[0077] Next, for example, Figure 6 As shown, the fourth surface G2 of the support substrate G of the bonding structure WG is fixed to the worktable T of the semiconductor manufacturing apparatus 100. Figure 9 Step S4).

[0078] Furthermore, the control unit CON of the semiconductor manufacturing apparatus 100 controls the rotation of the worktable T and the displacement and grinding action of the grinding tool B when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0079] In this embodiment, for example, Figure 7 As shown, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, the grinding tool B is moved from the second surface W2 side to the first surface W1 side of the semiconductor substrate W while the support substrate G is fixed to the worktable T and rotated. Through the movement of the worktable T and the grinding tool B, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are ground. Figure 9 Step S5).

[0080] In particular, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are ground using a grinding tool B, thereby removing them from the semiconductor substrate W by a single grinding action of the grinding tool B, that is, removing them from the semiconductor substrate W at the same time.

[0081] In addition, as mentioned above Figure 3 As shown, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region of the semiconductor substrate W, excluding the inclined portion WB, which includes the non-patterned region NA and the patterned region PA. Therefore, as... Figure 7 As shown, when the grinding tool B is moved along the Z direction from the second surface W2 side to the first surface W1 side of the semiconductor substrate W, contact between the grinding tool B and the support substrate G can be suppressed. That is, the grinding tool B can be easily controlled. Furthermore, by preventing the support substrate G from being ground by the grinding tool B, the support substrate G peeled off from the semiconductor substrate W can be reused. In addition, since the support substrate G is not ground by the grinding tool B, the risk of cutting chips adhering to the worktable T can be reduced.

[0082] Thus, for example Figure 8As shown, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are removed from the semiconductor substrate W by grinding with a grinding tool. Figure 9 Step S6).

[0083] Therefore, for example, the adhesive layer Q located parallel to the second surface W2 of the semiconductor substrate W, which becomes the processing surface of the back-side grinding process described later, is removed, thereby preventing the grinding wheel performing the back-side grinding from contacting the adhesive layer Q. Thus, the adhesive layer Q becomes difficult to peel off during the back-side grinding process.

[0084] Furthermore, in the subsequent back-side grinding process, the second surface W2 of the semiconductor substrate W with the bonded structure WG is ground using a grinding wheel, thereby thinning the semiconductor substrate W. Figure 9 Step S7). Furthermore, while the thinned semiconductor substrate W remains attached to the support substrate G, the damaged layer (crushed layer) generated during grinding (machining) is removed from the second surface W2 after grinding by, for example, wet etching (a chemical reaction-based process). Afterwards, following necessary processing such as film formation of a metal layer to become the back electrode by methods such as sputtering, the thinned semiconductor substrate W is peeled from the support substrate G and chipped via a dicing process. Figure 9 Step S8).

[0085] As described above, in the semiconductor device manufacturing method, it is possible to prevent the adhesive adhering to the inclined portion at the periphery of the semiconductor substrate from peeling off in a burr-like manner, such as during the thinning process when the back side of the semiconductor substrate is ground. This suppresses adhesive layer peeling, thereby preventing adhesive residue from remaining within the semiconductor manufacturing apparatus and preventing adhesive buildup in the filter of the circulation system. Furthermore, by attaching the glass internally, it is possible to easily control the cutting tool, thus reducing the risk of glass breakage.

[0086] That is, according to the semiconductor device manufacturing method of this embodiment, it is possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the manufacturing process of the semiconductor device.

[0087] Here, in the above embodiment, an example of a manufacturing method is described in which a grinding tool is used to remove a portion of the adhesive layer near the inclined portion along with the adhesive layer in order to suppress peeling of the adhesive layer. However, the method of removing a portion of the adhesive layer near the inclined portion along with the adhesive layer using a grinding tool in order to suppress peeling of the adhesive layer is not limited to the method described in this embodiment.

[0088] The following first to third variations illustrate other examples of methods for removing a portion of the adhesive layer near the inclined portion using a grinding tool in order to suppress peeling of the adhesive layer.

[0089] [First Variation]

[0090] here, Figure 10 This is a cross-sectional view illustrating an example of the step in the manufacturing method of the semiconductor device of the first modified example, which involves trimming a region containing a tilted portion of a semiconductor wafer. Furthermore, the configuration of the semiconductor manufacturing apparatus of this first modified example is similar to that of the embodiment described above. Figure 1 The semiconductor manufacturing apparatus 100 shown is the same.

[0091] First, similar to the above implementation method, for example by executing Figures 3 to 4 The process shown is used to prepare the semiconductor substrate W and the support substrate G.

[0092] Furthermore, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB of the semiconductor substrate W. Moreover, as... Figure 5 As shown, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB, and the support substrate G, on which the release layer H is formed, are bonded together by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G via the adhesive layer Q.

[0093] Next, in this first variation, for example, as follows: Figure 10 As shown, the second surface W2 of the semiconductor substrate W with the bonding structure WG is fixed to the worktable T of the semiconductor manufacturing apparatus 100.

[0094] Furthermore, the control unit CON of the semiconductor manufacturing apparatus 100 controls the rotation of the worktable T and the displacement and grinding action of the grinding tool B when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0095] In this first variation, for example, as Figure 10 As shown, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, the semiconductor substrate W is fixed to the worktable T and rotated, while the grinding tool B is moved from the first surface W1 side to the second surface W2 side of the semiconductor substrate W in the Z direction. Thus, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are ground using the grinding tool.

[0096] Furthermore, in this first variation, it is also as described above. Figure 3 As shown, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region of the semiconductor substrate W, excluding the inclined portion WB, which includes the non-patterned region NA and the patterned region PA. Therefore, as... Figure 10As shown, when the grinding tool B is moved along the Z direction from the first surface W1 side to the second surface W2 side of the semiconductor substrate W, contact between the grinding tool B and the support substrate G can be suppressed. That is, the grinding tool B can be easily controlled.

[0097] Thus, similarly to the above-described implementation method, such as Figure 8 As shown, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are removed from the semiconductor substrate W by grinding with a grinding tool.

[0098] Therefore, in the region U near the end of the non-patterned region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the end compared to the thickness of the adhesive layer Q attached to the inclined portion WB, thus making the adhesive layer Q difficult to peel off.

[0099] That is, according to the semiconductor device manufacturing method of this first modification, similar to the above-described embodiment, it is possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process.

[0100] [Second variation]

[0101] Figure 11 This is a cross-sectional view illustrating an example of a step in the manufacturing method of a semiconductor device according to a second modification, specifically a step involving trimming a region containing a tilted portion of a semiconductor wafer. Furthermore, the configuration of this second modification of the semiconductor manufacturing apparatus 200 is similar to that of the embodiment described above. Figure 1 The semiconductor manufacturing apparatus 100 shown is the same.

[0102] First, similar to the above implementation method, for example by executing Figures 3 to 4 The process shown is used to prepare the semiconductor substrate W and the support substrate G.

[0103] Furthermore, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB of the semiconductor substrate W. Moreover, as... Figure 5 As shown, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB, and the support substrate G, on which the release layer H is formed, are bonded together by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G via the adhesive layer Q.

[0104] Next, in this second variation, for example, as follows: Figure 11 As shown, the fourth surface G2 of the support substrate G of the bonding structure WG is fixed to the worktable T of the semiconductor manufacturing apparatus 200.

[0105] Furthermore, the control unit CON of the semiconductor manufacturing apparatus 200 controls the rotation of the worktable T and the displacement and grinding action of the grinding tool B when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0106] In this second variation, for example, as Figure 11 As shown, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, while the support substrate G is fixed to the worktable T and rotated, the grinding tool B is moved from the inclined portion WB side of the semiconductor substrate W towards the center of the semiconductor substrate W in the X direction. Thus, the grinding tool B grinds at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB.

[0107] Furthermore, in this second variation, the same applies as described above. Figure 3 As shown, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region of the semiconductor substrate W, excluding the inclined portion WB, which includes the non-patterned region NA and the patterned region PA. Therefore, as... Figure 11 As shown, when the grinding tool B is moved from the inclined portion WB side of the semiconductor substrate W towards the center of the semiconductor substrate W along the X direction, contact between the grinding tool B and the support substrate G can be suppressed. That is, the grinding tool B can be easily controlled.

[0108] Thus, similarly to the above-described implementation method, such as Figure 8 As shown, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are removed from the semiconductor substrate W by grinding with a grinding tool.

[0109] Therefore, in the region U near the end of the non-patterned region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the end compared to the thickness of the adhesive layer Q attached to the inclined portion WB, thus making the adhesive layer Q difficult to peel off.

[0110] That is, according to the semiconductor device manufacturing method of the second modification, it is possible to suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate in the semiconductor device manufacturing process.

[0111] [Third variation]

[0112] Figure 12 This is a cross-sectional view illustrating an example of a step in the manufacturing method of a semiconductor device according to a third modification, specifically a step involving trimming a region containing a tilted portion of a semiconductor wafer. Furthermore, the configuration of this third modification of the semiconductor manufacturing apparatus 300 is similar to that of the embodiment described above. Figure 1 The semiconductor manufacturing apparatus 100 shown is the same.

[0113] First, similar to the above implementation method, for example by executing Figures 3 to 4 The process shown is used to prepare the semiconductor substrate W and the support substrate G.

[0114] Furthermore, similar to the embodiments described above, an adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB of the semiconductor substrate W. Moreover, as... Figure 5 As shown, the semiconductor substrate W, on which the adhesive layer Q is continuously formed on the first surface W1 and the inclined portion WB, and the support substrate G, on which the release layer H is formed, are bonded together by bonding the first surface W1 of the semiconductor substrate W and the third surface G1 of the support substrate G via the adhesive layer Q.

[0115] Next, in this third variation, for example, as follows: Figure 12 As shown, the second surface W2 of the semiconductor substrate W with the bonding structure WG is fixed to the worktable T of the semiconductor manufacturing apparatus 100.

[0116] Furthermore, the control unit CON of the semiconductor manufacturing apparatus 100 controls the rotation of the worktable T and the displacement and grinding action of the grinding tool B when the semiconductor substrate W and the support substrate G are bonded together by the adhesive layer Q.

[0117] In this third variation, for example, as Figure 12 As shown, with the semiconductor substrate W and the support substrate G bonded together by the adhesive layer Q, the semiconductor substrate W is fixed to the worktable T and rotated, while the grinding tool B is moved from the inclined portion WB side of the semiconductor substrate W towards the center of the semiconductor substrate W in the X direction. Thus, the grinding tool B grinds at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB.

[0118] Furthermore, in this third variation, the same applies as described above. Figure 3 As shown, the second value d2 of the average diameter of the support substrate G is set to be smaller than the third value d3 of the average diameter of the region of the semiconductor substrate W, excluding the inclined portion WB, which includes the non-patterned region NA and the patterned region PA. Therefore, as... Figure 12 As shown, when the grinding tool B is moved from the inclined portion WB side of the semiconductor substrate W towards the center of the semiconductor substrate W along the X direction, contact between the grinding tool B and the support substrate G can be suppressed. That is, the grinding tool B can be easily controlled.

[0119] Thus, similarly to the above-described implementation method, such as Figure 8 As shown, at least the inclined portion WB and the portion of the adhesive layer Q formed in the inclined portion WB are removed from the semiconductor substrate W by grinding with a grinding tool.

[0120] Therefore, in the region U near the end of the non-patterned region NA of the semiconductor substrate W, the adhesive layer Q has a certain thickness at the end compared to the thickness of the adhesive layer Q attached to the inclined portion WB, thus making the adhesive layer Q difficult to peel off.

[0121] As described above, the semiconductor device manufacturing method according to this third modification can suppress the peeling of the peripheral portion of the adhesive used to bond the semiconductor substrate and the support substrate during the semiconductor device manufacturing process.

[0122] Several embodiments of the present invention have been described, but these embodiments are given by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and are included within the scope of the invention as described in the claims and its equivalents.

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The semiconductor substrate has a first surface including a patterned area with a device pattern, a second surface opposite to the first surface, and inclined portions located at the peripheries of the first surface and the second surface, and an adhesive layer is continuously formed on the first surface and the inclined portions. The support substrate has a third surface including a release layer region on which a release layer is formed. The semiconductor substrate and the support substrate are bonded together by means of the first surface and the third surface being bonded together via the adhesive layer. With the semiconductor substrate and the support substrate bonded together by the adhesive layer, at least the inclined portion and the portion of the adhesive layer formed in the inclined portion are removed from the semiconductor substrate.

2. The method for manufacturing a semiconductor device as claimed in claim 1, characterized in that, The semiconductor substrate and the support substrate are bonded together such that a perpendicular line passing through the center of the first surface of the semiconductor substrate passes through the center of the third surface of the support substrate.

3. The method for manufacturing a semiconductor device as described in claim 2, characterized in that, The average diameter of the semiconductor substrate in a direction parallel to the first surface of the semiconductor substrate is a first value. The average diameter of the support substrate in the direction parallel to the third surface of the support substrate is a second value. The first value is larger than the second value. The second value is longer than the distance of the patterned region in the direction parallel to the first surface.

4. The method for manufacturing a semiconductor device as claimed in claim 3, characterized in that, The average diameter of the portion of the semiconductor substrate, excluding the inclined portion, in a direction parallel to the first surface of the semiconductor substrate is a third value. The second value is smaller than the third value.

5. The method for manufacturing a semiconductor device as claimed in claim 1, characterized in that, The inclined portion and the portion of the adhesive layer formed on the inclined portion are removed from the semiconductor substrate by grinding with a grinding tool.

6. The method for manufacturing a semiconductor device as claimed in claim 5, characterized in that, When the inclined portion and the portion of the adhesive layer formed in the inclined portion are removed from the semiconductor substrate, and the semiconductor substrate and the support substrate are bonded together by the adhesive layer, The grinding tool is used to remove at least the inclined portion and the portion of the adhesive layer formed on the inclined portion from the semiconductor substrate by displacing the grinding tool from the second surface side to the first surface side, or The grinding tool is used to remove at least the inclined portion and the portion of the adhesive layer formed on the inclined portion from the semiconductor substrate by displacing the grinding tool from the first surface side to the second surface side. The grinding tool is used to remove at least the inclined portion and the portion of the adhesive layer formed on the inclined portion from the semiconductor substrate by displacing the grinding tool from one side of the inclined portion toward the center of the semiconductor substrate.

7. The method for manufacturing a semiconductor device as claimed in claim 5, characterized in that, With the semiconductor substrate and the support substrate bonded together by the adhesive layer, the grinding tool is used to grind at least the inclined portion and the portion of the adhesive layer formed on the inclined portion to remove them from the semiconductor substrate simultaneously.

8. A semiconductor manufacturing apparatus, which is used to manufacture semiconductor devices, characterized in that, have: The worktable is used to fix and rotate the bonding structure formed by bonding the semiconductor substrate and the support substrate. A grinding tool is used to grind the ends of the mating structure; and The control unit controls the rotation of the worktable, and also controls the displacement of the grinding tool and the grinding action. The semiconductor substrate has a first surface including a patterned area with a device pattern, a second surface opposite to the first surface, and inclined portions located at the peripheries of the first surface and the second surface, and an adhesive layer is continuously formed on the first surface and the inclined portions. The support substrate has a third surface including a release layer region on which a release layer is formed. When the semiconductor substrate and the support substrate are bonded together via the adhesive layer, with the first surface and the third surface bonded together via the adhesive layer. The control unit controls the rotation of the worktable and the displacement and grinding action of the grinding cutter, using the grinding cutter to grind at least the inclined portion and the portion of the adhesive layer formed on the inclined portion to remove it from the semiconductor substrate.

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