Monocrystalline silicon growth furnace capable of efficiently protecting silicon rod

Abstract

The invention discloses a monocrystalline silicon growth furnace capable of efficiently protecting a silicon rod. Comprising a furnace body, a furnace cover, a connecting chamber connected with the furnace cover, an auxiliary chamber, a furnace cover moving mechanism for moving the furnace cover, an auxiliary chamber moving mechanism for moving the auxiliary chamber, a seed crystal chuck, a seed crystal chuck driving mechanism for driving the seed crystal chuck to lift and rotate, a crucible and a crucible driving mechanism for driving the crucible to lift and rotate, a flow guide cover and an argon protection unit; an isolating valve is mounted at the connecting chamber; the argon protection unit comprises an argon supply unit, a gas supply pipe, a recovery pipe and an argon recovery unit. According to the monocrystalline silicon growth furnace disclosed by the invention, the argon circulating blowing requirement during silicon rod drawing and the protection requirement on the silicon rod during secondary charging are well fused, and the two requirements are comprehensively met. And during secondary feeding, air can be prevented from entering the auxiliary chamber, so that the isolation and protection effects on the silicon rods are better.

Description

Technical Field

[0001] This invention relates to the field of single-crystal silicon growth furnace technology, and more specifically, to a single-crystal silicon growth furnace with efficient protection of silicon rods. Background Technology

[0002] A monocrystalline silicon growth furnace is a high-end thermal equipment used in a high-temperature, inert gas-protected environment to melt and recrystallize polycrystalline silicon raw materials, growing cylindrical monocrystalline silicon rods with specific crystal orientations and no grain boundary defects. It is the most crucial and cutting-edge equipment in the manufacture of semiconductor chips and high-efficiency solar cells, and the quality of the monocrystalline silicon grown in it directly determines the performance of the final product.

[0003] During the pulling of monocrystalline silicon rods, argon gas is required to fill the furnace body and sub-chamber to protect the rods. Furthermore, during the pulling process, argon gas needs to be purged from the top of the sub-chamber downwards to create an argon gas circulation, thereby carrying away SiO gas and preventing its adverse effects on the silicon rod pulling. Additionally, to pull longer and larger silicon rods, secondary feeding is sometimes necessary. Typically, during secondary feeding in monocrystalline silicon growth furnaces, the half-pulled silicon rod is moved upwards and stored in the sub-chamber. The sub-chamber is then removed to allow for secondary feeding within the furnace. However, before removal, the sub-chamber is filled with argon gas; after removal, the bottom is open. If left unattended, air may enter the sub-chamber, affecting the quality of the silicon rod. Existing monocrystalline silicon production furnaces do not comprehensively address these two requirements, and the isolation and protection of the silicon rod during secondary feeding is inadequate. Summary of the Invention

[0004] The present invention aims to overcome the shortcomings of the prior art and provide a single crystal silicon growth furnace with efficient protection of silicon rods.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a single-crystal silicon growth furnace, comprising a furnace body, a furnace cover, a connecting chamber connected to the furnace cover, a secondary chamber, a furnace cover moving mechanism for moving the furnace cover, a secondary chamber moving mechanism for moving the secondary chamber, a seed crystal chuck, a seed crystal chuck driving mechanism for driving the seed crystal chuck to rise, fall, and rotate, a crucible, a crucible driving mechanism for driving the crucible to rise, fall, and rotate, a flow guide hood, and an argon gas protection unit; an isolation valve is installed at the connecting chamber; the argon gas protection unit includes an argon gas supply unit, a gas supply pipe connected to the argon gas supply unit, a recovery pipe connected to the furnace body, and an argon gas recovery unit connected to the recovery pipe.

[0006] Furthermore, the connecting chamber is connected to the furnace cover.

[0007] Furthermore, the furnace cover moving mechanism can be used to raise and lower the furnace cover, and can also remove the furnace cover from above the furnace body.

[0008] Furthermore, the auxiliary chamber moving mechanism can be used to raise and lower the auxiliary chamber, and can move the auxiliary chamber away from the connecting chamber.

[0009] Furthermore, a surrounding shell is fixed to the sub-chamber, and the side wall of the sub-chamber has multiple vent holes; a first flange is fixed to the bottom of the sub-chamber, the first flange has an annular cavity and multiple vertical insertion holes, and the gas supply pipe is connected in parallel to a first pipe section and a second pipe section, the first pipe section communicating with the space inside the surrounding shell, and the second pipe section communicating with the annular cavity; the argon gas protection unit also includes a second flange and a valve unit, the second flange has multiple gas outlet channels, and each gas outlet channel corresponds to an insertion tube connected to the second flange.

[0010] Furthermore, a lifting drive mechanism capable of driving the second flange to move up and down relative to the first flange is connected between the second flange and the first flange.

[0011] Furthermore, the valve unit includes a circular valve plate and a strip block fixedly connected to the circular valve plate. A valve drive unit capable of driving the valve unit to translate is installed at the first flange. The valve unit has a groove portion and a channel portion communicating with the groove portion. A third pipe portion communicating with the channel portion is connected at the strip block.

[0012] Furthermore, the circular valve plate can be located between the first flange and the second flange and is clamped by the first flange and the second flange.

[0013] Furthermore, the vent connects the space inside the enclosure and the secondary interior space.

[0014] Furthermore, the vertical insertion hole is connected to the annular cavity.

[0015] Furthermore, the number of insertion tubes is equal to the number of vertical insertion holes, and each insertion tube can be inserted into the corresponding vertical insertion hole.

[0016] In some embodiments, an electric lifting mast can be replaced by a hydraulic lifting mast.

[0017] Furthermore, the lifting drive mechanism includes a boss fixed to the first flange, an L-shaped lifting plate fixedly connected to the second flange, and an electric lifting rod. The boss is fixedly connected to a side protrusion and has a vertical limiting groove into which the L-shaped lifting plate is inserted. One end of the electric lifting rod is connected to the side protrusion, and the other end is connected to the L-shaped lifting plate.

[0018] Thus, the electric lifting rod can drive the second flange to rise and fall.

[0019] Furthermore, there are two lifting drive mechanisms.

[0020] This makes the lifting and lowering of the second flange more stable.

[0021] Furthermore, the first flange is fixedly connected to a strip plate with a strip-shaped through groove. A strip-shaped limiting seat, a first convex plate, and a second convex plate are fixedly fixed to the strip plate. A drive motor is installed on the first convex plate, and a bearing is installed on the second convex plate. A lead screw is connected between the drive motor and the bearing. The strip block has a strip-shaped limiting groove that mates with the strip-shaped limiting seat. A slider that passes through the strip-shaped through groove is fixedly connected to the strip block. The slider has a threaded hole that mates with the lead screw.

[0022] Furthermore, the vertical portion of the L-shaped lifting plate is fixedly connected to the second flange, and the horizontal portion of the L-shaped lifting plate is connected to the end of the electric telescopic rod.

[0023] Furthermore, the air outlet has 5-8 holes distributed in a ring with equal spacing; the vertical insertion hole has 5 holes distributed in a ring with equal spacing; the insertion tube has 5 holes distributed in a ring with equal spacing; and the air outlet channel has 5 channels distributed in a ring with equal spacing.

[0024] Furthermore, the top of the connecting chamber has an annular groove, into which the second flange can be embedded; the bottom of the second flange has a bottom sealing ring.

[0025] Furthermore, the bottom end of the first flange has a first inner annular groove and a first outer annular groove, a first inner sealing ring is installed in the first inner annular groove, and a first outer sealing ring is installed in the first outer annular groove.

[0026] Furthermore, the top of the second flange has a second inner annular groove and a second outer annular groove, a second inner sealing ring is installed in the second inner annular groove, and a second outer sealing ring is installed in the second outer annular groove.

[0027] This allows for a better sealing connection between the first and second flanges.

[0028] Furthermore, the gas supply pipe is equipped with a gas supply pipe valve.

[0029] Furthermore, the recovery pipe has a recovery pipe valve.

[0030] Furthermore, the first pipe section has a first valve.

[0031] Furthermore, the second pipe section has a second valve.

[0032] Furthermore, a third valve is installed at the third pipe section, and a fourth pipe section is connected to the third pipe section, with a fourth valve installed at the fourth pipe section.

[0033] Furthermore, the connection point between the fourth pipe section and the third pipe section is located between the third valve and the strip block.

[0034] Furthermore, the third pipe section is connected to an exhaust gas collection unit.

[0035] Furthermore, the fourth pipe is connected to the argon recovery unit.

[0036] Furthermore, it also includes a cooling water circulation system; water-cooled pipes are provided in the auxiliary chamber, connecting chamber, furnace cover, and furnace body, and the water-cooled pipes in the auxiliary chamber, connecting chamber, furnace cover, and furnace body are connected to the cooling water circulation system in parallel.

[0037] This enables separate water cooling of the auxiliary chamber, connecting chamber, furnace cover, and furnace body.

[0038] Furthermore, an observation window is installed at the connecting chamber; temperature sensors are installed in both the furnace body and the auxiliary chamber.

[0039] Furthermore, the monocrystalline silicon growth furnace can be in a pulling state and a feeding state; in the pulling state, the top end of the second flange abuts against the bottom end of the first flange, the bottom end of the second flange abuts against the connecting chamber, the first valve is open, and the second valve is closed; in the feeding state, the auxiliary chamber is moved away from above the connecting chamber, the circular valve plate is located between the first flange and the second flange and is clamped by the first flange and the second flange, and both the first valve and the second valve are open.

[0040] In some embodiments, during feeding, a gas receiving hood can be installed below the second flange. The gas receiving hood is connected to a suction pipe, so that the argon gas coming out of the gas outlet enters the gas receiving hood and is sucked away by the suction pipe, thus preventing the argon gas from entering the plant space.

[0041] Furthermore, in the drawn state, the second flange is embedded in the annular groove of the connecting chamber.

[0042] Beneficial effects:

[0043] 1. The single-crystal silicon growth furnace of this application effectively integrates the requirements for argon gas circulation and blowing during silicon rod pulling and the requirements for protecting the silicon rod during secondary feeding, thus comprehensively solving the above two requirements.

[0044] 2. The monocrystalline silicon growth furnace of this application can prevent air from entering the auxiliary chamber during secondary feeding, thus providing better isolation and protection for the silicon rod. Attached Figure Description

[0045] Figure 1 A schematic diagram of the pulling process in a single-crystal silicon growth furnace;

[0046] Figure 2 This is a magnified view of region A;

[0047] Figure 3 This is a magnified view of region B.

[0048] Figure 4 This is a magnified view of region C;

[0049] Figure 5 A schematic diagram showing the removal of the auxiliary chamber from above the connecting chamber;

[0050] Figure 6 This is a magnified view of region D;

[0051] Figure 7 This is a schematic diagram showing the second flange moving downwards relative to the first flange;

[0052] Figure 8 This is a magnified view of region E.

[0053] Figure 9 This is a magnified view of region F;

[0054] Figure 10 A schematic diagram showing the circular valve plate inserted between the first and second flanges;

[0055] Figure 11 This is a magnified view of region G;

[0056] Figure 12 This is a magnified view of region H;

[0057] Figure 13 A schematic diagram showing the circular valve plate clamped between the first and second flanges;

[0058] Figure 14 This is a magnified view of region I.

[0059] Explanation of reference numerals in the attached drawings: Furnace body 1; Furnace cover 1.1; Recovery pipe 1.2; Recovery pipe valve 1.2.1; Connecting chamber 2; Observation window 2.1; Sub-chamber 3; Enclosure shell 3.1; Gas supply pipe 4; First pipe section 4.1; First valve 4.1.1; Second pipe section 4.2; Second valve 4.2.1; Gas supply pipe valve 4.3; First flange 5; Vertical insertion hole 5.1; Boss 5.2; Side protrusion 5.3; Electric lifting rod 5.4; L-shaped lifting plate 5.5; First inner sealing ring 5.6; First outer sealing ring 5.7; Second flange 6; Gas outlet channel 6.1; Insertion tube 6.2; bottom sealing ring 6.3; second inner sealing ring 6.4; second outer sealing ring 6.5; circular valve plate 7.1; strip block 7.2; strip limiting slide groove 7.2.1; groove part 7.3; channel part 7.4; third pipe part 7.5; third valve 7.5.1; slider 7.6; fourth pipe part 7.7; fourth valve 7.7.1; strip plate 8; strip through groove 8.1; strip limiting seat 8.2; first convex plate 8.3; second convex plate 8.4; drive motor 8.5; lead screw 8.6; furnace cover moving mechanism 9; auxiliary chamber moving mechanism 10. Detailed Implementation

[0060] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0061] This invention provides a single-crystal silicon growth furnace with high-efficiency protection for silicon rods, as shown in the figure. It includes a furnace body 1, a furnace cover 1.1, a connecting chamber 2 connected to the furnace cover 1.1, a secondary chamber 3, a furnace cover moving mechanism 9 for moving the furnace cover 1.1, a secondary chamber moving mechanism 10 for moving the secondary chamber 3, a seed crystal chuck, a seed crystal chuck driving mechanism for driving the seed crystal chuck to rise, fall, and rotate, a crucible, a crucible driving mechanism for driving the crucible to rise, fall, and rotate, a flow guide hood, and an argon gas protection unit. An isolation valve is installed at the connecting chamber 2. The argon gas protection unit includes an argon gas supply unit, a gas supply pipe 4 connected to the argon gas supply unit, a recovery pipe 1.2 connected to the furnace body 1, and an argon gas recovery unit connected to the recovery pipe 1.2. A surrounding shell 3.1 is fixed to the sub-chamber 3. The sidewall of the sub-chamber 3 has multiple air outlets connecting the space inside the surrounding shell 3.1 and the space inside the sub-chamber 3. A first flange 5 is fixed to the bottom of the sub-chamber 3. The first flange 5 has an annular cavity and multiple vertical insertion holes 5.1 communicating with the annular cavity. The gas supply pipe 4 is connected in parallel to a first pipe section 4.1 and a second pipe section 4.2. The first pipe section 4.1 communicates with the space inside the surrounding shell 3.1, and the second pipe section 4.2 communicates with the annular cavity. The argon gas protection unit also includes a second flange 6 and a valve unit. The second flange 6 has multiple air outlet channels 6.1. Each air outlet channel 6.1 corresponds to an insertion tube 6.2 connected to the second flange 6. The number of insertion tubes 6.2 is equal to the number of vertical insertion holes 5.1, and each insertion tube 6.2 can be inserted into the corresponding vertical insertion hole 5.1. The first flange 5 has two protrusions 5.2, each protrusion 5.2 is fixedly connected to a side protrusion 5.3 and has a vertical limiting groove. An electric lifting rod 5.4 is installed at the side protrusion 5.3. The movable end of the electric lifting rod 5.4 is connected to an L-shaped lifting plate 5.5 inserted into the vertical limiting groove. The bottom end of the L-shaped lifting plate 5.5 is fixedly connected to the second flange 6. The valve unit includes a circular valve plate 7.1 and a strip block 7.2 fixedly connected to the circular valve plate 7.1. A valve drive unit capable of driving the valve unit to move is installed at the first flange 5. The valve unit has a groove portion 7.3 and a channel portion 7.4 communicating with the groove portion 7.3. A third pipe portion 7.5 communicating with the channel portion 7.4 is connected at the strip block 7.2. The circular valve plate 7.1 can be located between the first flange 5 and the second flange 6 and is clamped by the first flange 5 and the second flange 6.The first flange 5 is fixedly connected to a strip plate 8 with a strip-shaped through groove 8.1. A strip-shaped limiting seat 8.2, a first convex plate 8.3, and a second convex plate 8.4 are fixed at the strip plate 8. A drive motor 8.5 is installed at the first convex plate 8.3, and a bearing is installed at the second convex plate 8.4. A lead screw 8.6 is connected between the drive motor and the bearing. The strip block 7.2 has a strip-shaped limiting groove 7.2.1 that mates with the strip-shaped limiting seat 8.2. A slider 7.6 passing through the strip-shaped through groove 8.1 is fixedly connected to the strip block 7.2. The slider 7.6 has a threaded hole that mates with the lead screw 8.6.

[0062] The air outlets are 5-8 in a ring with equal spacing; the vertical insertion holes 5.1 are 5 in a ring with equal spacing; the insertion tubes 6.2 are 5 in a ring with equal spacing; the air outlet channels 6.1 are 5 in a ring with equal spacing. The top of the connecting chamber 2 has an annular groove, into which the second flange 6 can be embedded; the bottom of the second flange 6 has a bottom sealing ring 6.3; the bottom end of the first flange 5 has a first inner annular groove and a first outer annular groove, with a first inner sealing ring 5.6 installed in the first inner annular groove and a first outer sealing ring 5.7 installed in the first outer annular groove; the top of the second flange 6 has a second inner annular groove and a second outer annular groove, with a second inner sealing ring 6.4 installed in the second inner annular groove and a second outer sealing ring 6.5 installed in the second outer annular groove. The gas supply pipe 4 has a gas supply pipe valve 4.3; the recovery pipe 1.2 has a recovery pipe valve 1.2.1; the first pipe section 4.1 has a first valve 4.1.1; the second pipe section 4.2 has a second valve 4.2.1. The third pipe section 7.5 is equipped with a third valve 7.5.1, and the third pipe section 7.5 is connected to a fourth pipe section 7.7, which is equipped with a fourth valve 7.7.1; the connection point between the fourth pipe section 7.7 and the third pipe section 7.5 is located between the third valve 7.5.1 and the strip block 7.2; the third pipe section 7.5 is connected to a waste gas collection unit; the fourth pipe section 7.7 is connected to the argon gas recovery unit.

[0063] The monocrystalline silicon production furnace also includes a cooling water circulation system; water-cooled pipes are installed in the auxiliary chamber 3, connecting chamber 2, furnace cover 1.1, and furnace body 1, and the water-cooled pipes in the auxiliary chamber 3, connecting chamber 2, furnace cover 1.1, and furnace body 1 are connected to the cooling water circulation system in parallel. An observation window 2.1 is installed in the connecting chamber 2; temperature sensors are installed in both the furnace body 1 and the auxiliary chamber 3. The monocrystalline silicon growth furnace can be in a pulling state and a feeding state; in the pulling state, the top end of the second flange 6 abuts against the bottom end of the first flange 5, and the bottom end of the second flange 6 abuts against the connecting chamber 2, the first valve 4.4.1 is open, and the second valve 4.2.1 is closed; in the feeding state, the auxiliary chamber 3 is moved away from the connecting chamber 2, the circular valve plate 7.1 is located between the first flange 5 and the second flange 6 and is clamped by the first flange 5 and the second flange 6, and both the first valve 4.4.1 and the second valve 4.2.1 are open. In the drawn state, the second flange 6 is embedded in the annular groove of the connecting chamber 2.

[0064] Working Principle: In the monocrystalline silicon growth furnace of this application, during normal pulling, the second flange is embedded in the annular groove of the connecting chamber, and the isolation valve of the connecting chamber is open. When pulling silicon rods, the second valve is closed, and argon gas enters the surrounding shell from the first tube, enters the top of the secondary chamber through the gas outlet, and the gas outlet is distributed in an annular and equally spaced manner, thus making the gas output more uniform in the circumferential direction. The argon gas is blown downwards, passing through the secondary chamber, the connecting chamber, and the furnace body, and is finally recovered from the recovery pipe, thereby realizing the circulation of argon gas and protecting the environment for monocrystalline silicon pulling.

[0065] When secondary feeding is required, the isolation valve separates the auxiliary chamber from the furnace body (the isolation valve opens when feeding the furnace body later). The auxiliary chamber is driven away from the connecting chamber by the auxiliary chamber drive mechanism, and the electric lifting rod moves the second flange away from the first flange, thus exposing a gap between the first and second flanges. This allows the circular valve plate to be inserted between the first and second flanges, which then clamp the circular valve plate, sealing the bottom of the auxiliary chamber and better protecting the silicon rod inside. At this time, both the first and second valves are open, and some argon gas exits from the vent at the top of the auxiliary chamber, purging the surface of the silicon rod and entering the groove section through the channel section. Initially, the third valve is open and the fourth valve is closed. The gas exiting from the channel section is collected by the waste collection unit (because the bottom of the auxiliary chamber is not yet sealed by the circular valve plate, a small amount of air may be mixed in with the argon gas, hence it is waste gas). Then the fourth valve opens (at this point, the waste gas has been completely discharged), and the third valve closes. The argon gas passing through the channel section is now mostly pure argon gas, which is collected by the recovery unit (the argon gas in the recovery unit can be recycled after subsequent processing steps). Another portion of the argon gas passes through the second tube and can be blown obliquely below the circular valve plate through the gas outlet channel, thus forming a downward-blown argon gas curtain. This prevents air from entering the sub-chamber. Even if the circular valve plate has a slightly poor sealing effect on the bottom of the sub-chamber, the air curtain can still prevent air from entering the sub-chamber, thereby avoiding air entering the sub-chamber and thus better protecting the silicon rod.

[0066] Although the present invention has been illustrated and described with reference to preferred embodiments, those skilled in the art should understand that various changes and modifications can be made to the present invention without departing from the scope defined by the claims.

Claims

1. A single-crystal silicon growth furnace for efficient protection of silicon rods, characterized in that, The furnace includes a furnace body, a furnace cover, a connecting chamber connected to the furnace cover, a secondary chamber, a furnace cover moving mechanism for moving the furnace cover, a secondary chamber moving mechanism for moving the secondary chamber, a seed crystal chuck, a seed crystal chuck driving mechanism for driving the seed crystal chuck to rise, fall, and rotate, a crucible, a crucible driving mechanism for driving the crucible to rise, fall, and rotate, a flow guide hood, and an argon gas protection unit; an isolation valve is installed at the connecting chamber; the argon gas protection unit includes an argon gas supply unit, a gas supply pipe connected to the argon gas supply unit, a recovery pipe connected to the furnace body, and an argon gas recovery unit connected to the recovery pipe.

2. The single crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 1, characterized in that, A surrounding shell is fixed to the sub-chamber, and the sidewall of the sub-chamber has multiple vent holes. A first flange is fixed to the bottom of the sub-chamber. The first flange has an annular cavity and multiple vertical insertion holes. The gas supply pipe is connected in parallel to a first pipe section and a second pipe section. The first pipe section communicates with the space inside the surrounding shell, and the second pipe section communicates with the annular cavity. The argon protection unit also includes a second flange and a valve unit. The second flange has multiple vent channels, and each vent channel corresponds to an insertion pipe connected to the second flange. A lifting drive mechanism that can drive the second flange to rise and fall relative to the first flange is connected between the second flange and the first flange. The valve unit includes a circular valve plate and a strip block fixedly connected to the circular valve plate. A valve drive unit that can drive the valve unit to translate is installed at the first flange. The valve unit has a groove and a channel section communicating with the groove. A third pipe section communicating with the channel section is connected to the strip block. The circular valve plate can be located between the first flange and the second flange and is clamped by the first flange and the second flange.

3. The single crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, The lifting drive mechanism includes a boss fixed to the first flange, an L-shaped lifting plate fixedly connected to the second flange, and an electric lifting rod. The boss is fixedly connected to a side protrusion and has a vertical limiting groove into which the L-shaped lifting plate is inserted. One end of the electric lifting rod is connected to the side protrusion, and the other end is connected to the L-shaped lifting plate. There are two lifting drive mechanisms. The first flange is fixedly connected to a strip plate with a strip-shaped through groove. A strip-shaped limiting seat, a first protrusion, and a second protrusion are fixed to the strip plate. A drive motor is installed on the first protrusion, and a bearing is installed on the second protrusion. A lead screw is connected between the drive motor and the bearing. The strip block has a strip-shaped limiting groove that mates with the strip-shaped limiting seat. A slider passing through the strip-shaped through groove is fixedly connected to the strip block. The slider has a threaded hole that mates with the lead screw.

4. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, The air outlet has 5-8 holes arranged in a ring with equal spacing; the vertical insertion hole has 5 holes arranged in a ring with equal spacing; the insertion tube has 5 holes arranged in a ring with equal spacing; and the air outlet channel has 5 channels arranged in a ring with equal spacing.

5. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, The top of the connecting chamber has an annular groove, into which the second flange can be embedded; the bottom of the second flange has a bottom sealing ring; the bottom end of the first flange has a first inner annular groove and a first outer annular groove, with a first inner sealing ring installed in the first inner annular groove and a first outer sealing ring installed in the first outer annular groove; the top of the second flange has a second inner annular groove and a second outer annular groove, with a second inner sealing ring installed in the second inner annular groove and a second outer sealing ring installed in the second outer annular groove.

6. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, The gas supply pipe has a gas supply pipe valve; the recovery pipe has a recovery pipe valve; the first pipe section has a first valve; and the second pipe section has a second valve.

7. The single crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, A third valve is installed at the third pipe section, and a fourth pipe section is connected to the third pipe section. A fourth valve is installed at the fourth pipe section. The connection point between the fourth pipe section and the third pipe section is located between the third valve and the strip block. The third pipe section is connected to a waste gas collection unit. The fourth pipe section is connected to the argon gas recovery unit.

8. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, It also includes a cooling water circulation system; water-cooled pipes are provided in the auxiliary chamber, connecting chamber, furnace cover, and furnace body, and the water-cooled pipes in the auxiliary chamber, connecting chamber, furnace cover, and furnace body are connected to the cooling water circulation system in parallel.

9. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, An observation window is installed in the connecting chamber; temperature sensors are installed in both the furnace body and the auxiliary chamber.

10. The single-crystal silicon growth furnace for high-efficiency protection of silicon rods according to claim 2, characterized in that, The monocrystalline silicon growth furnace can be in a pulling state and a feeding state; in the pulling state, the top end of the second flange abuts against the bottom end of the first flange, the bottom end of the second flange abuts against the connecting chamber, the first valve is open, and the second valve is closed; in the feeding state, the auxiliary chamber is moved away from the top of the connecting chamber, the circular valve plate is located between the first flange and the second flange and is clamped by the first flange and the second flange, and both the first valve and the second valve are open.

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