Simulation method and device of three-phase converter, computer equipment and storage medium
By calculating the switching time of the three-phase converter and constructing the switching function, and combining the outputs of the controlled current source and voltage source, the problem of low real-time simulation accuracy of the three-phase converter was solved, achieving high-precision and high-efficiency simulation results.
Patent Information
- Application Number
- CN202511581677.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-31
- Publication Date
- 2026-03-20
AI Technical Summary
The real-time simulation accuracy of three-phase converters in the current technology is low, especially with large simulation step sizes, the error is large and cannot meet the simulation accuracy requirements.
By calculating the switching times of semiconductor devices in a three-phase converter from turn-on to turn-off and from turn-off to turn-on, a switching function is constructed. Combined with the outputs of controlled current sources and controlled voltage sources, a simulation model is built and simulated.
It improves simulation accuracy, reduces simulation errors, achieves a balance between simulation speed and accuracy, reasonably reproduces harmonics, and improves simulation reliability and the rationality of topology parameter verification.
Smart Images
Figure CN121706676A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of simulation modeling, and particularly relates to a simulation method and device of a three-phase converter, computer equipment and a storage medium. BACKGROUND
[0002] In recent years, overexploitation and utilization of energy such as coal, oil and natural gas have led to increasingly serious environmental problems. Distributed power sources mainly including photovoltaic power generation and wind power generation are increasing in proportion in power production and life. With the rise of distributed power sources and the development of large-scale, long-distance high-voltage power transmission, the penetration rate of new energy is continuously increasing, and the 'double high' characteristics of high proportion of renewable energy and high proportion of power electronic equipment in the power system are highlighted. In order to verify the rationality of the topology parameters and the effectiveness of the control algorithm, power electronic converters such as three-phase converters need to be comprehensively tested through real-time simulation before being put into use.
[0003] In order to improve the efficiency of real-time simulation and relieve the computing pressure, related technologies usually realize the simulation of the three-phase converter through a time average model (TAM). However, since real-time simulation is performed at the switching time of the whole step, the simulation error is large at a large simulation step, resulting in low simulation accuracy. SUMMARY
[0004] In order to solve the problem of low simulation accuracy in the prior art, the present application provides a simulation method, device, computer equipment and storage medium of a three-phase converter.
[0005] In a first aspect, the present application provides a simulation method of a three-phase converter, which can include: calculating the switching time of the semiconductor device from conduction to turn-off and the switching time of the semiconductor device from turn-off to conduction in the three-phase converter according to the instantaneous value of the modulation wave and the instantaneous value of the carrier.
[0006] constructing the switching function of each bridge arm in the three-phase converter according to the switching time of the semiconductor device from conduction to turn-off and the switching time of the semiconductor device from turn-off to conduction.
[0007] simulating the three-phase converter according to the switching function.
[0008] In some possible implementation manners, the switching time of the semiconductor device from conduction to turn-off satisfies:
[0009] wherein, denotes the switching time of the semiconductor device from conduction to turn-off, denotes the time corresponding to the i th simulation time step, m denotes the time corresponding to the i th simulation time step, denotes the time corresponding to the i th simulation time step, the instantaneous value of the carrier at the time instant, represents the slope of the carrier. the instantaneous value of the carrier at the time instant, k represents the slope of the carrier.
[0010] the switching time of the semiconductor device from off to on satisfies:
[0011] wherein, the switching time of the semiconductor device from off to on satisfies: represents the time instant corresponding to the k-th simulation time step, n the instantaneous value of the modulating wave at the time instant, the instantaneous value of the carrier at the time instant, the instantaneous value of the carrier at the time instant. In some possible implementation manners, the switching function in the case of switching the semiconductor device from on to off satisfies:
[0012] In some possible implementation manners, the switching function in the case of switching the semiconductor device from on to off satisfies:
[0013] wherein, the switching function in the case of switching the semiconductor device from on to off satisfies: the switching time of the semiconductor device from on to off satisfies, represents the time instant corresponding to the k-th simulation time step, m represents the simulation step length. the switching function in the case of switching the semiconductor device from off to on satisfies:
[0014]
[0015] wherein, the switching function in the case of switching the semiconductor device from off to on satisfies: the switching time of the semiconductor device from off to on satisfies, represents the time instant corresponding to the k-th simulation time step. n In some possible implementation manners, the switching function in the case of switching the semiconductor device from off to on satisfies:
[0016] The simulation model of the three-phase converter is constructed. The simulation model comprises a controlled current source and a three-phase topology structure, a first end of the controlled current source is connected to a first end of each upper bridge arm in each phase topology structure, and a second end of the controlled current source is connected to a second end of each lower bridge arm in the three-phase H-bridge topology structure; a first end of a first controlled voltage source in each phase topology structure is a first end of the each phase topology structure, a second end of the first controlled voltage source is connected to a first end of a second controlled voltage source in the each phase topology structure, and a second end of the second controlled voltage source is a second end of the each phase topology structure.
[0017] The output current of the controlled current source and the output voltage of each controlled voltage source are determined according to the switching function.
[0018] The three-phase converter is simulated according to the output current of the controlled current source, the output voltage of each controlled voltage source and the simulation model.
[0019] Optionally, the output current of the controlled current source satisfies:
[0020] wherein, I represents the output current of the controlled current source, S represents the switching function of the upper / lower bridge arm in the i-th phase, i I represents the current of the upper / lower bridge arm in the i-th phase, . i .
[0021] The output voltage of the controlled voltage source satisfies:
[0022] wherein, V represents the output voltage of the controlled voltage source, S represents the switching function of the bridge arm where the controlled voltage source is located, V represents the DC side voltage of the three-phase converter.
[0023] In a second aspect, the present application provides a simulation device of a three-phase converter, which can comprise: The calculation module is configured to calculate the switching time of the semiconductor device from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on in the three-phase converter according to the instantaneous value of the modulation wave and the instantaneous value of the carrier.
[0024] The construction module is configured to construct the switching function of each bridge arm in the three-phase converter according to the switching time of the semiconductor device from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on.
[0025] The simulation module is configured to simulate the three-phase converter according to the switching function.
[0026] In some possible implementations, the switching time of the semiconductor device from on to off satisfies:
[0027] in, It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value at a given moment. k This represents the slope of the carrier wave.
[0028] The switching time of a semiconductor device from off to on satisfies:
[0029] in, It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value of a moment.
[0030] In some other possible implementations, the switching function for switching the semiconductor device from on to off needs to satisfy the following:
[0031] in, This represents a switching function used when a semiconductor device needs to be switched from being on to being off. It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step This indicates the simulation step size.
[0032] The switching function for switching a semiconductor device from off to on needs to satisfy the following:
[0033] in, This represents the switching function required to switch a semiconductor device from off to on. It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n Each simulation time step corresponds to a specific moment.
[0034] In some other possible implementations, the simulation module is specifically used for: A simulation model of a three-phase converter is constructed. The simulation model includes controlled current sources and a three-phase topology. The first terminal of the controlled current source is connected to the first terminal of each upper arm in each phase topology, and the second terminal of the controlled current source is connected to the second terminal of each lower arm in the three-phase H-bridge topology. The first terminal of the first controlled voltage source in each phase topology serves as the first terminal of the phase topology, the second terminal of the first controlled voltage source is connected to the first terminal of the second controlled voltage source in each phase topology, and the second terminal of the second controlled voltage source serves as the second terminal of the phase topology.
[0035] The output current of the controlled current source and the output voltage of each controlled voltage source are determined based on the switching function.
[0036] The three-phase converter is simulated based on the output current of the controlled current source, the output voltage of each controlled voltage source, and the simulation model.
[0037] Optionally, the output current of the controlled current source satisfies:
[0038] in, This represents the output current of the controlled current source. Indicates the first i Select the switching functions of the upper / lower bridge arm. Indicates the first i Select the current in the upper / lower bridge arm. .
[0039] The output voltage of the controlled voltage source satisfies:
[0040] in, This represents the output voltage of the controlled voltage source. This represents the switching function of the bridge arm containing the controlled voltage source. This represents the DC-side voltage of a three-phase converter.
[0041] In another aspect, this application also provides a computer device, including: one or more processors.
[0042] A processor is used to execute one or more programs. When one or more programs are executed by one or more processors, the simulation method described above is implemented.
[0043] Furthermore, this application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed, it implements the simulation method described above.
[0044] Compared with the prior art, the beneficial effects of this application are as follows: The simulation method for a three-phase converter provided in this application calculates the switching times of semiconductor devices in the three-phase converter from on to off and from off to on based on the instantaneous values of the modulation wave and the carrier wave. Switching functions for each arm of the three-phase converter can be constructed based on these switching times, and the three-phase converter can then be simulated using these switching functions. This application provides switching functions based on the two switching times, which solves the simulation error problem caused by the lack of interpolation in fixed-step simulations, thus reducing simulation errors and improving simulation accuracy.
[0045] This application determines the output current of the controlled current source and the output voltage of each controlled voltage source in the simulation model by constructing a switching function, which can greatly reduce the simulation time and reasonably reproduce harmonics, thus achieving a balance between simulation speed and accuracy.
[0046] The simulation method provided in this application simulates a three-phase converter based on the output current of the controlled current source, the output voltage of each controlled voltage source, and the simulation model. This method can reduce simulation errors during the simulation process, improve simulation reliability, and thus enhance the rationality of verifying the topology parameters of the three-phase converter. Attached Figure Description
[0047] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0048] Figure 1 This is a schematic flowchart of a simulation method for a three-phase converter in an embodiment of this application; Figure 2 This is a schematic diagram illustrating the changes in the instantaneous values of the modulated wave and the carrier wave over time in the embodiments of this application. Figure 3 The reference value and average value of the switching pulse signal in the embodiments of this application are given by time. t A schematic diagram illustrating the changes; Figure 4 This is a schematic structural diagram of a simulation model in an embodiment of this application; Figure 5 This is a schematic diagram of the AC current waveform obtained using the DM model in related technologies; Figure 6This is a schematic diagram of the AC current waveform obtained using the PAM model in the embodiments of this application; Figure 7 This is a schematic diagram of the AC current waveform obtained using the PAM model in the embodiments of this application; Figure 8 This is a schematic diagram of the distribution of harmonics of alternating current obtained using the DM model in related technologies; Figure 9 This is a schematic diagram of the distribution of each harmonic of the alternating current obtained by using the PAM model in the embodiments of this application; Figure 10 This is a schematic diagram of the distribution of each harmonic of the alternating current obtained by using the PAM model in the embodiments of this application; Figure 11 This is a schematic structural diagram of a simulation device for a three-phase converter in the embodiments of this application. Detailed Implementation
[0049] The technical solutions in this application will now be described with reference to the accompanying drawings.
[0050] The terms "first," "second," etc., used in the specification, embodiments, claims, and drawings of this application are for distinguishing purposes only and should not be construed as indicating or implying relative importance or order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, such as including a series of steps or units. A method, system, product, or apparatus is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products, or apparatuses.
[0051] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.
[0052] Example 1: This application provides a simulation method for a three-phase converter. For example... Figure 1 As shown, the simulation method 100 includes the following steps: Step S1: Calculate the switching time of the semiconductor devices in the three-phase converter from turn-on to turn-off and from turn-off to turn-on based on the instantaneous values of the modulation wave and the carrier wave.
[0053] Step S2: Construct the switching function of each bridge arm in the three-phase converter based on the switching time of the semiconductor device from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on.
[0054] Step S3: Simulate the three-phase converter based on the switching function.
[0055] In some possible implementations, the instantaneous value of the modulated wave instantaneous value of carrier wave The changes over time can be referenced. Figure 2 . Figure 2 middle, Indicates the first m The time corresponding to each simulation time step It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n Each simulation time step corresponds to a specific moment.
[0056] The switching time of a semiconductor device from on to off satisfy: ; in, Indicates the first m The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value at a given moment. k This represents the slope of the carrier wave.
[0057] The switching time of a semiconductor device from off to on. satisfy: ;in, Indicates the first n The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value of a moment.
[0058] Reference value of switching pulse signal S ref Average value of the switching pulse signal As time goes by tThe changes can be referenced Figure 3 Average value of the switching pulse signal ∈[0,1], during switch switching It will take a value between 0 and 1, for example, when When the value is 0.4, it only represents one simulation step size. T s Internally, the safety device is conducting at 0.4. T s The time is 0.6 seconds. T s The time. Figure 3 middle, Indicates the first m +1 simulation time step corresponds to the time. Indicates the first n +1 simulation time step corresponds to the time. This means that the area occupied by the on state during the pulse trigger's transition from on to off within a simulation time step is equal to 1 times the pulse trigger's duration, satisfying the condition... . This represents the area occupied by the on-state during the pulse trigger's transition from off to on state in one simulation time step. It is equal to pulse trigger 1 multiplied by the duration of the on-state, satisfying the following condition: , Indicates the first n +1 simulation time step corresponds to the time. This represents the area of the on-state during a simulation time step from off to on, where the pulse triggering process is averaged over that time step, satisfying the following condition: , Indicates the simulation step size. This indicates the situation where it is necessary to switch the semiconductor device from off to on. The switching function at a given time. This represents the area occupied by the on-state during the pulse trigger's transition from on to off within a simulation time step. It is equal to pulse trigger 1 multiplied by the duration of the on-state, satisfying the following condition: , This indicates a situation where it is necessary to switch the semiconductor device from on to off. The switching function at a given time.
[0059] Since the total shadow area of the reference signal and the average signal are equal, i.e., satisfying = , = We can obtain the following: The switching function for switching a semiconductor device from on to off satisfies: ;in, This represents a switching function used when a semiconductor device needs to be switched from being on to being off. It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step This indicates the simulation step size.
[0060] Similarly, the switching function for switching a semiconductor device from off to on needs to satisfy the following: ;in, This represents the switching function required to switch a semiconductor device from off to on. It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n The time corresponding to each simulation time step In some possible implementations, step 3 involves simulating the three-phase converter based on the switching function, including: Construct a simulation model of a three-phase converter.
[0061] like Figure 4 As shown, the simulation model 200 may include a controlled current source I and a three-phase topology. The three-phase topology includes an upper bridge arm 11, a lower bridge arm 12, an upper bridge arm 21, a lower bridge arm 22, an upper bridge arm 31, and a lower bridge arm 32. Upper bridge arms 11 and lower bridge arms 12 constitute... a The phase topology consists of upper bridge arm 21 and lower bridge arm 22. b The phase topology consists of upper bridge arm 31 and lower bridge arm 32. c Phase topology.
[0062] The first terminal of the controlled current source I is connected to the first terminal of each upper bridge arm (i.e., upper bridge arm 11, upper bridge arm 21, upper bridge arm 31) in each phase topology, and the second terminal of the controlled current source I is connected to the second terminal of each lower bridge arm (i.e., lower bridge arm 12, lower bridge arm 22, lower bridge arm 32) in the three-phase H-bridge topology. Each upper bridge arm includes a first controlled voltage source V1 and a diode connected in series, and each lower bridge arm includes a second controlled voltage source V2 and a diode connected in series. The first terminal of the first controlled voltage source V1 serves as the first terminal of each phase topology, and the second terminal of the first controlled voltage source V1 is connected to the first terminal of the second controlled voltage source V2 via a diode. The second terminal of the second controlled voltage source V2 is connected to a diode, serving as the second terminal of each phase topology. Figure 4 middle, C dc This represents the DC-side capacitance of a three-phase converter. L Indicates alternating current inductance. R Indicates AC resistance. e a , eb , e c This represents the three-phase AC voltage, and O represents the neutral point.
[0063] The output current of the controlled current source I and the output voltage of each controlled voltage source (i.e., each first controlled voltage source V1 and each second controlled voltage source V2) are determined based on the switching function.
[0064] The three-phase converter is simulated based on the output current of controlled current source I, the output voltage of each controlled voltage source, and the simulation model.
[0065] Optionally, the output current of the controlled current source I satisfies: ;in, This represents the output current of the controlled current source I. Indicates the first i Select the switching functions of the upper / lower bridge arm. Indicates the first i Select the current in the upper / lower bridge arm. .
[0066] The output voltage of the controlled voltage source satisfies: ;in, This represents the output voltage of the controlled voltage source. This represents the switching function of the bridge arm containing the controlled voltage source. This represents the DC-side voltage of a three-phase converter.
[0067] To verify the simulation accuracy and efficiency of the three-phase converter simulation method provided in this application embodiment, a detailed model (DM) of the three-phase converter was built based on the Matlab / Simulink platform and related technologies as the simulation model (hereinafter referred to as the DM model). In this application embodiment, a pulse average model (PAM) was built as the simulation model (hereinafter referred to as the PAM model). Both models employ dual closed-loop control with an outer voltage loop and an inner current loop, and both are connected to an AC system on the AC side. The simulation parameters are shown in Table 1. Table 1
[0068] The simulation employs a fixed-step, backward Euler discretization method, with the switching signals generated using sinusoidal pulse width modulation. Since the primary purpose of the simulation is to verify the model's characteristics, the three-phase inverter utilizes simple open-loop control.
[0069] Taking phase A as an example, using the DM model and setting the simulation step size to 20 microseconds, the following results can be obtained: Figure 5 The AC current waveform diagram shown and as follows Figure 8The diagram shows the distribution of harmonics in the alternating current. Using the PAM model with a simulation step size of 20 microseconds, the following results can be obtained: Figure 6 The AC current waveform diagram shown and as follows Figure 9 The diagram shows the distribution of harmonics in the alternating current. Using the PAM model with a simulation step size of 50 microseconds, the following results can be obtained: Figure 7 The diagram shows the AC current waveform and as shown below. Figure 10 The diagram shows the distribution of harmonics of alternating current. Figures 5 to 7 In the graph, the horizontal axis represents time, with the unit being seconds. Figures 8 to 10 In the diagram, the horizontal axis represents the harmonic number.
[0070] Depend on Figures 5 to 10 The comparison shows that both the DM model and the PAM model can simulate the AC current waveform, and the obtained A-phase AC current meets the expectations. Moreover, compared with the DM model, the PAM model constructed in this application embodiment has smaller harmonic components in its output current and more accurate simulation by averaging the switching signal within the step size. It can also retain a certain output accuracy at a step size of 20 microseconds.
[0071] The simulation results are shown in Table 2: Table 2
[0072] Table 2 shows that when the simulation step size is 20 microseconds, the THD of the DM model is 36.62% higher than the reference value, while the Total Harmonic Distortion (THD) of the PAM model is 3.13% higher. When the simulation step size is 50 microseconds, the THD of the PAM model is 2.41% higher than the reference value. This indicates that, compared to the DM model, the harmonic content of the PAM model is closer to the reference value, and it can better simulate the harmonics generated during switching. Furthermore, the harmonic content of the PAM model does not differ significantly under different simulation step sizes, showing less influence from the simulation time step. However, the amplitude of its fundamental current differs from the reference value and is significantly affected by the simulation time step.
[0073] The simulation duration was set to 0.5 seconds, and the simulation calculation time of the DM model and PAM model was recorded using Matlab's timing functions, as shown in Table 3: Table 3
[0074] Table 3 shows that for both the DM and PAM models, a smaller simulation time step results in a longer computation time and a greater computational burden on the system. However, the DM model is more significantly affected by the simulation time step. In contrast, the PAM model, with its higher simulation accuracy and ability to reasonably reproduce harmonics, can significantly reduce simulation time and improve simulation efficiency with simulation time steps of 20 or 50 microseconds.
[0075] Example 2: Based on the same inventive concept, this application also provides a simulation device for a three-phase converter, such as... Figure 11 As shown. The simulation device 300 may include: The calculation module 301 is used to calculate the switching time of the semiconductor device from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on in the three-phase converter based on the instantaneous value of the modulated wave and the instantaneous value of the carrier wave.
[0076] Module 302 is used to construct the switching function of each arm in the three-phase converter based on the switching time of the semiconductor device from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on.
[0077] Simulation module 303 is used to simulate a three-phase converter based on the switching function.
[0078] In some possible implementations, the switching time of the semiconductor device from on to off, calculated by the calculation module 301, satisfies: ;in, It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value at a given moment. k This represents the slope of the carrier wave.
[0079] The switching time of the semiconductor device from off to on, calculated by the calculation module 301, satisfies the following: ;in, It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n The time corresponding to each simulation time step Indicates the modulated wave at The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value of a moment.
[0080] In some other possible implementations, the switching function constructed by module 302 needs to satisfy the following conditions when switching the semiconductor device from on to off: ;in, This represents a switching function used when a semiconductor device needs to be switched from being on to being off. It indicates the switching moment when a semiconductor device changes from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step This indicates the simulation step size.
[0081] Module 302 constructs a switching function that satisfies the condition of switching the semiconductor device from off to on: ;in, This represents the switching function required to switch a semiconductor device from off to on. It indicates the switching moment when a semiconductor device transitions from being off to being on. Indicates the first n Each simulation time step corresponds to a specific moment.
[0082] In some other possible implementations, simulation module 303 is specifically used for: Construct a simulation model of a three-phase converter (model 200). Figure 4 As shown, the simulation model 200 may include a controlled current source I and a three-phase topology. The three-phase topology includes an upper bridge arm 11, a lower bridge arm 12, an upper bridge arm 21, a lower bridge arm 22, an upper bridge arm 31, and a lower bridge arm 32. Upper bridge arms 11 and lower bridge arms 12 constitute... a The phase topology consists of upper bridge arm 21 and lower bridge arm 22. b The phase topology consists of upper bridge arm 31 and lower bridge arm 32. c Phase topology.
[0083] The first terminal of the controlled current source I is connected to the first terminal of each upper bridge arm (i.e., upper bridge arm 11, upper bridge arm 21, upper bridge arm 31) in each phase topology, and the second terminal of the controlled current source I is connected to the second terminal of each lower bridge arm (i.e., lower bridge arm 12, lower bridge arm 22, lower bridge arm 32) in the three-phase H-bridge topology. Each upper bridge arm includes a first controlled voltage source V1 and a diode connected in series, and each lower bridge arm includes a second controlled voltage source V2 and a diode connected in series. The first terminal of the first controlled voltage source V1 serves as the first terminal of each phase topology, and the second terminal of the first controlled voltage source V1 is connected to the first terminal of the second controlled voltage source V2 via a diode. The second terminal of the second controlled voltage source V2 is connected to a diode, serving as the second terminal of each phase topology. Figure 4 middle, C dc This represents the DC-side capacitance of a three-phase converter. L Indicates alternating current inductance.R Indicates AC resistance. e a , e b , e c This represents the three-phase AC voltage, and O represents the neutral point.
[0084] The output current of the controlled current source I and the output voltage of each controlled voltage source (i.e., each first controlled voltage source V1 and each second controlled voltage source V2) are determined based on the switching function.
[0085] The three-phase converter is simulated based on the output current of controlled current source I, the output voltage of each controlled voltage source, and the simulation model.
[0086] Optionally, the output current of the controlled current source I satisfies: ;in, This represents the output current of the controlled current source I. Indicates the first i Select the switching functions of the upper / lower bridge arm. Indicates the first i Select the current in the upper / lower bridge arm. .
[0087] The output voltage of the controlled voltage source satisfies: ;in, This represents the output voltage of the controlled voltage source. This represents the switching function of the bridge arm containing the controlled voltage source. This represents the DC-side voltage of a three-phase converter.
[0088] Example 3: Based on the same inventive concept, this application also provides a computer device, which includes a processor and a memory. The memory stores a computer program, which includes program instructions. The processor executes the program instructions stored in the computer storage medium. The processor may be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. It is the computing and control core of the terminal, and is suitable for implementing one or more instructions. Specifically, it is suitable for loading and executing one or more instructions in the computer storage medium to implement the corresponding method flow or corresponding function, so as to implement the steps of the simulation method provided in the above embodiments.
[0089] Example 4: Based on the same inventive concept, this application also provides a computer-readable storage medium, specifically a computer-readable storage medium (Memory). A computer-readable storage medium is a memory device in a computer device used to store programs and data. It is understood that the computer-readable storage medium here can include both the built-in storage medium in the computer device and extended storage media supported by the computer device. The computer-readable storage medium provides storage space that stores the terminal's operating system. Furthermore, this storage space also stores one or more instructions suitable for loading and execution by a processor. These instructions can be one or more computer programs (including program code). It should be noted that the computer-readable storage medium here can be high-speed RAM or non-volatile memory, such as at least one disk storage device. The processor can load and execute one or more instructions stored in the computer-readable storage medium to implement the steps of the simulation method provided in the above embodiments.
[0090] Those skilled in the art will understand that the embodiments of the application can be provided as a method, system, or computer program product. Therefore, the application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the application can take the form of a computer program product implemented on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
[0091] The application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.
[0092] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.
[0093] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.
[0094] The above are merely examples of the application and are not intended to limit the application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the application shall be included within the scope of the claims of the pending application.
Claims
1. A simulation method for a three-phase converter, characterized in that, include: Based on the instantaneous values of the modulated wave and the carrier wave, calculate the switching time of the semiconductor device in the three-phase converter from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on. Based on the switching times of the semiconductor device from on to off and from off to on, the switching functions of each arm in the three-phase converter are constructed. The three-phase converter is simulated based on the switching function.
2. The simulation method according to claim 1, characterized in that, The switching time of the semiconductor device from on to off satisfies: in, This indicates the switching time of the semiconductor device from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step This indicates that the modulated wave is in The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value at a given moment. k Indicates the slope of the carrier wave; The switching time of the semiconductor device from off to on satisfies: in, This indicates the switching time of the semiconductor device from off to on. Indicates the first n The time corresponding to each simulation time step This indicates that the modulated wave is in The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value of a moment.
3. The simulation method according to claim 1, characterized in that, The switching function for switching the semiconductor device from on to off needs to satisfy the following: in, This represents a switching function that requires switching the semiconductor device from on to off. This indicates the switching time of the semiconductor device from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step Indicates the simulation step size; The switching function for switching the semiconductor device from off to on needs to satisfy the following: in, This represents the switching function required to switch the semiconductor device from off to on. This indicates the switching time of the semiconductor device from off to on. Indicates the first n Each simulation time step corresponds to a specific moment.
4. The simulation method according to claim 1, characterized in that, The simulation of the three-phase converter based on the switching function includes: A simulation model of the three-phase converter is constructed. The simulation model includes a controlled current source and a three-phase topology. The first terminal of the controlled current source is connected to the first terminal of each upper arm in the three-phase H-bridge topology, and the second terminal of the controlled current source is connected to the second terminal of each lower arm in the three-phase H-bridge topology. The first terminal of a first controlled voltage source in each phase topology serves as the first terminal of the phase topology, and the second terminal of the first controlled voltage source is connected to the first terminal of a second controlled voltage source in the phase topology. The second terminal of the second controlled voltage source serves as the second terminal of the phase topology. The output current of the controlled current source and the output voltage of each controlled voltage source are determined according to the switching function. The three-phase converter is simulated based on the output current of the controlled current source, the output voltage of each controlled voltage source, and the simulation model.
5. The simulation method according to claim 4, characterized in that, The output current of the controlled current source satisfies: in, This represents the output current of the controlled current source. Indicates the first i Select the switching functions of the upper / lower bridge arm. Indicates the first i Select the current in the upper / lower bridge arm. ; The output voltage of the controlled voltage source satisfies: in, This represents the output voltage of the controlled voltage source. This represents the switching function of the bridge arm containing the controlled voltage source. This represents the DC-side voltage of the three-phase converter.
6. A simulation device for a three-phase converter, characterized in that, include: The calculation module is used to calculate the switching time of the semiconductor device in the three-phase converter from turn-on to turn-off and the switching time of the semiconductor device from turn-off to turn-on based on the instantaneous value of the modulated wave and the instantaneous value of the carrier wave. A construction module is used to construct the switching function of each arm in the three-phase converter based on the switching time of the semiconductor device from on to off and the switching time of the semiconductor device from off to on. The simulation module is used to simulate the three-phase converter based on the switching function.
7. The simulation device according to claim 6, characterized in that, The switching time of the semiconductor device from on to off satisfies: in, This indicates the switching time of the semiconductor device from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step This indicates that the modulated wave is in The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value at a given moment. k Indicates the slope of the carrier wave; The switching time of the semiconductor device from off to on satisfies: in, This indicates the switching time of the semiconductor device from off to on. Indicates the first n The time corresponding to each simulation time step This indicates that the modulated wave is in The instantaneous value at a given moment. Indicates that the carrier is in The instantaneous value of a moment.
8. The simulation device according to claim 6, characterized in that, The switching function for switching the semiconductor device from on to off needs to satisfy the following: in, This represents a switching function that requires switching the semiconductor device from on to off. This indicates the switching time of the semiconductor device from being turned on to being turned off. Indicates the first m The time corresponding to each simulation time step Indicates the simulation period; The switching function for switching the semiconductor device from off to on needs to satisfy the following: in, This represents the switching function required to switch the semiconductor device from off to on. This indicates the switching time of the semiconductor device from off to on. Indicates the first n Each simulation time step corresponds to a specific moment.
9. The simulation device according to claim 6, characterized in that, The simulation module is specifically used for: A simulation model of the three-phase converter is constructed. The simulation model includes a controlled current source and a three-phase topology. The first terminal of the controlled current source is connected to the first terminal of each upper arm in the three-phase H-bridge topology, and the second terminal of the controlled current source is connected to the second terminal of each lower arm in the three-phase H-bridge topology. The first terminal of a first controlled voltage source in each phase topology serves as the first terminal of the phase topology, and the second terminal of the first controlled voltage source is connected to the first terminal of a second controlled voltage source in the phase topology. The second terminal of the second controlled voltage source serves as the second terminal of the phase topology. The output current of the controlled current source and the output voltage of each controlled voltage source are determined according to the switching function. The three-phase converter is simulated based on the output current of the controlled current source, the output voltage of each controlled voltage source, and the simulation model.
10. The simulation device according to claim 9, characterized in that, The output current of the controlled current source satisfies: in, This represents the output current of the controlled current source. Indicates the first i Select the switching functions of the upper / lower bridge arm. Indicates the first i Select the current in the upper / lower bridge arm. ; The output voltage of the controlled voltage source satisfies: in, This represents the output voltage of the controlled voltage source. This represents the switching function of the bridge arm containing the controlled voltage source. This represents the DC-side voltage of the three-phase converter.
11. A computer device, characterized in that, include: One or more processors; The processor is used to store one or more programs; When the one or more programs are executed by the one or more processors, the simulation method as described in any one of claims 1 to 5 is implemented.
12. A computer-readable storage medium, characterized in that, It contains a computer program, which, when executed, implements the simulation method as described in any one of claims 1 to 5.