Heterogeneous integrated electro-absorption modulated laser structure and preparation method thereof
By using a heterogeneous integrated electroabsorption modulated laser structure, the complexity and reliability issues in the fabrication process of traditional EML devices are solved, realizing a heterogeneous integrated electroabsorption modulated laser with high speed and high power performance, simplifying the fabrication process and improving the yield.
Patent Information
- Application Number
- CN202511921671.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-18
- Publication Date
- 2026-03-20
AI Technical Summary
Traditional electroabsorption modulated laser (EML) devices suffer from complex fabrication processes, high costs, low yields, and insufficient reliability and lifespan. In particular, the problems of lattice mismatch and thermal stress introduced by multiple epitaxys on the same substrate are difficult to solve.
Heterogeneous integration technology is used to fabricate electroabsorption modulators and semiconductor lasers on different substrates, and heterogeneous integration is achieved through micro-transfer technology, which simplifies the process flow and avoids material compatibility and interface defects caused by multiple epitaxy.
This technology achieves high speed and high power performance of the device while improving yield and consistency, providing a technical path for low-cost manufacturing of high-speed optical communication chips.
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Figure CN121710055A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of new semiconductor device, and more particularly, to a hetero-integrated electroabsorption modulated laser structure and a preparation method thereof. BACKGROUND
[0002] Under the background of rapid development of high-speed optical communication and data center interconnection technology, as the core optical transmitting device, electroabsorption modulated laser (EML) becomes the key component of high-speed long-distance transmission system due to its high modulation efficiency, large bandwidth and small chirp. However, the traditional EML device usually adopts distributed feedback laser diode (DFB LD) and electroabsorption modulator (EAM) on the same substrate through multiple selective etching and multiple epitaxy, which has the problems of complex process, difficult control of the interface state of the two, high manufacturing cost and low yield, and the lattice mismatch and thermal stress introduced by multiple epitaxy also affect the reliability and life of the device.
[0003] In order to break through the above bottleneck, the industry urgently needs a new EML structure design and integration scheme. At present, although the exploration of new technologies such as quantum well intermixing (QWI), selective epitaxial growth (SAG) and monolithic integration partially alleviates the integration difficulty, it still faces challenges such as sensitive process control, difficult to balance modulation performance and laser characteristics, etc. SUMMARY
[0004] Therefore, the present disclosure provides a hetero-integrated electroabsorption modulated laser structure and a preparation method thereof.
[0005] One aspect of the present disclosure provides a hetero-integrated electro-absorption modulated laser structure, comprising: an electro-absorption modulator comprising a substrate (101), a first N-type semiconductor layer (102), a first active region (103), a first P-type semiconductor layer (104) and a first heavily doped semiconductor contact layer (105) sequentially stacked on the substrate (101); a semiconductor laser comprising a second N-type semiconductor layer (107), a grating layer (108), a second active region (109), a second P-type semiconductor layer (110) and a second heavily doped semiconductor contact layer (111) stacked on the substrate (101); an anti-reflection layer (114) arranged between the electro-absorption modulator and the semiconductor laser; wherein the electro-absorption modulator and the semiconductor laser are independently prepared in advance on different substrates, and are hetero-integrated by micro-transfer printing technology.
[0006] According to an embodiment of the present disclosure, in the electro-absorption modulator, the first N-type semiconductor layer (102) and the first P-type semiconductor layer (104) are configured to be capable of position interchanging.
[0007] According to an embodiment of the present disclosure, in the semiconductor laser, the second N-type semiconductor layer (107) and the second P-type semiconductor layer (110) are configured to be capable of position interchanging.
[0008] According to an embodiment of the present disclosure, the electro-absorption modulator further comprises: a first electrode metal layer (106) and a second electrode metal layer (115); wherein the first electrode metal layer (106) is arranged on the first heavily doped semiconductor contact layer (105), and the second electrode metal layer (115) is arranged on the first N-type semiconductor layer (102).
[0009] According to an embodiment of the present disclosure, the semiconductor laser further comprises: a third electrode metal layer (112) and a fourth electrode metal layer (113); wherein the third electrode metal layer (112) is arranged on the second heavily doped semiconductor contact layer (111), and the fourth electrode metal layer (113) is arranged on the second N-type semiconductor layer (107).
[0010] According to an embodiment of the present disclosure, the material of the substrate is configured as a III-V semiconductor insulating material, and the III-V semiconductor insulating material comprises InP.
[0011] According to an embodiment of the present disclosure, the first active region (103) is configured as a multi-quantum well material or a bulk material.
[0012] According to an embodiment of the present disclosure, the second active region (109) is configured as a multi-quantum well material or a quantum dot material.
[0013] According to embodiments of the present disclosure, the material of the antireflective layer (114) is configured as a dielectric material, including one or more of SiO2, SiNx, and BCB.
[0014] Another aspect of this disclosure provides a method for fabricating a heterogeneous integrated electroabsorption modulated laser structure, comprising: sequentially growing a semiconductor material layer of an electroabsorption modulator on a first substrate using metal-organic chemical vapor deposition or molecular beam epitaxy; forming an electroabsorption modulator waveguide structure and metal electrodes through photolithography and etching processes; sequentially growing a semiconductor material layer of a semiconductor laser on a second substrate using metal-organic chemical vapor deposition or molecular beam epitaxy; fabricating a grating, waveguide, and metal electrodes of the semiconductor laser through photolithography and etching processes; peeling the fabricated semiconductor laser from the second substrate and transferring the semiconductor laser to the first substrate of the electroabsorption modulator using micro-transfer technology, or peeling the fabricated electroabsorption modulator from the first substrate and transferring the electroabsorption modulator to the second substrate of the semiconductor laser using micro-transfer technology; achieving high-precision alignment of the semiconductor laser waveguide and the electroabsorption modulator waveguide using alignment marks; and fabricating an anti-reflection layer at the interface between the aligned semiconductor laser and the electroabsorption modulator, ultimately obtaining a heterogeneous integrated electroabsorption modulated laser structure.
[0015] Compared with the prior art, the heterogeneous integrated electro-absorption modulated laser structure and its fabrication method provided in this disclosure have at least the following beneficial effects:
[0016] The heterogeneous integrated electroabsorption modulated laser structure and its fabrication method disclosed herein achieve heterogeneous integration (EML) by designing, fabricating, and testing a semiconductor laser and an electroabsorption modulator separately on different substrates, and then using micro-transfer technology to transfer the semiconductor laser thin film onto the substrate of the electroabsorption modulator (or vice versa). This method allows for parallel optimization design, epitaxial growth, fabrication processes, and testing of the semiconductor laser and the electroabsorption modulator, avoiding problems such as material compatibility, process complexity, and interface defects controlled by epitaxial growth associated with multiple epitaxy and continuous fabrication on the same substrate. Thus, while achieving high speed and high power, it significantly simplifies the fabrication process, improves device consistency and yield, and provides a novel technological path for the efficient and low-cost manufacturing of next-generation high-speed optical communication chips. Attached Figure Description
[0017] The above and other objects, features and advantages of this disclosure will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:
[0018] Figure 1A cross-sectional view of a heterogeneous integrated electroabsorption modulated laser structure according to an embodiment of the present disclosure is shown schematically.
[0019] Figure 2 A perspective view of a heterogeneous integrated electroabsorption modulated laser structure according to an embodiment of the present disclosure is shown schematically. Detailed Implementation
[0020] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.
[0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.
[0022] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.
[0023] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).
[0024] To make the objectives, technical solutions and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.
[0025] Figure 1 A cross-sectional view of a heterogeneous integrated electroabsorption modulated laser structure according to an embodiment of the present disclosure is shown schematically.
[0026] like Figure 1 As shown, the structure of the heterogeneous integrated electro-absorption modulated laser in this embodiment may include, for example, an electro-absorption modulator, a semiconductor laser, and an anti-reflection layer.
[0027] The electroabsorption modulator includes: a substrate 101, a first N-type semiconductor layer 102, a first active region 103, a first P-type semiconductor layer 104, and a first heavily doped semiconductor contact layer 105, which are stacked on the substrate 101 from bottom to top.
[0028] The semiconductor laser includes: a second N-type semiconductor layer 107, a grating layer 108, a second active region 109, a second P-type semiconductor layer 110, and a second heavily doped semiconductor contact layer 111, which are stacked sequentially from bottom to top on a substrate 101.
[0029] The anti-reflection layer 114 is disposed between the electroabsorption modulator and the semiconductor laser.
[0030] In this embodiment of the disclosure, the electroabsorption modulator and the semiconductor laser are prefabricated independently on different substrates and heterogeneously integrated using micro-transfer printing technology, and their waveguides are aligned with high precision using alignment marks.
[0031] According to embodiments of the present disclosure, in the electroabsorption modulator, the first N-type semiconductor layer 102 and the first P-type semiconductor layer 104 are configured to be interchangeable.
[0032] For example, in an electroabsorption modulator, in addition to arranging the semiconductor materials in the positions described above, the positions of the first N-type semiconductor layer 102 and the first P-type semiconductor layer 104 can be interchanged. The structure of each layer in the electroabsorption modulator after the interchange is as follows:
[0033] The substrate 101 includes a first P-type semiconductor layer 104, a first active region 103, a first N-type semiconductor layer 102, and a first heavily doped semiconductor contact layer 105, which are stacked sequentially from bottom to top on the substrate 101.
[0034] At this time, in the electroabsorption modulator, the semiconductor carrier layer structure composed of the first P-type semiconductor layer 104, the first active region 103 and the first N-type semiconductor layer 102 changes from the original PIN structure to the NIP structure.
[0035] According to embodiments of the present disclosure, in a semiconductor laser, the second N-type semiconductor layer 107 and the second P-type semiconductor layer 110 are configured to be interchangeable.
[0036] For example, in a semiconductor laser, in addition to arranging the semiconductor materials in the positions shown above, the positions of the second N-type semiconductor layer 107 and the second P-type semiconductor layer 110 can be interchanged. The structure of each layer in the semiconductor laser after the interchange is as follows:
[0037] The second P-type semiconductor layer 110, the grating layer 108, the second active region 109, the second N-type semiconductor layer 107, and the second heavily doped semiconductor contact layer 111 are sequentially stacked on the substrate 101 from bottom to top.
[0038] At this point, in the semiconductor laser, the semiconductor carrier layer structure composed of the second N-type semiconductor layer 107, the second active region 109, and the second P-type semiconductor layer 110 changes from the original PIN structure to a NIP structure.
[0039] Figure 2 A perspective view of a heterogeneous integrated electroabsorption modulated laser structure according to an embodiment of the present disclosure is shown schematically.
[0040] like Figure 2 As shown, according to an embodiment of the present disclosure, the electroabsorption modulator further includes: a first electrode metal layer 106 and a second electrode metal layer 115.
[0041] The first electrode metal layer 106 is disposed on the first heavily doped semiconductor contact layer 105, and the second electrode metal layer 115 is disposed on the first N-type semiconductor layer 102.
[0042] According to embodiments of this disclosure, the semiconductor laser further includes a third electrode metal layer 112 and a fourth electrode metal layer 113.
[0043] The third electrode metal layer 112 is disposed on the second heavily doped semiconductor contact layer 111, and the fourth electrode metal layer 113 is disposed on the second N-type semiconductor layer 107.
[0044] In this embodiment of the disclosure, the materials of each layer of the heterogeneous integrated electroabsorption modulated laser structure can be configured as follows, for example:
[0045] The substrate 101 can be made of a III-V group semi-insulating material, such as InP.
[0046] The material of the first N-type semiconductor layer 102 can be a III-V group material such as InP, and is usually doped with Si or Zn.
[0047] The material of the first active region 103 can be a multi-quantum-well material or a bulk material, such as InGaAsP or AlInGaAs.
[0048] The material of the first P-type semiconductor layer 104 can be a III-V group material such as InP, and is usually doped with Zn or Si.
[0049] The material of the first doped semiconductor contact layer 105 can be InGaAs, etc., and is usually doped with Zn or C.
[0050] The material of the first electrode metal layer 106 can be one or more of Au, Ge, Ni, Ti, Cr, Pt, etc.
[0051] The material of the second electrode metal layer 115 can be one or more of Au, Ge, Ni, Ti, Cr, Pt, etc.
[0052] The material of the second N-type semiconductor layer 107 can be a III-V group material such as InP, and is usually doped with Si or Zn.
[0053] The grating layer 108 can be made of materials such as InGaAsP or AlInGaAs. In this embodiment, the grating layer 108 can be located above the second N-type semiconductor layer 107, or above the second active region 109.
[0054] The material of the second active region 109 can be a multi-quantum well material or a quantum dot material, such as InGaAsP or AlInGaAs. In this embodiment, the second active region 109 can be located above or below the grating layer 108.
[0055] The material of the second P-type semiconductor layer 110 can be a III-V group material such as InP, and is usually doped with Zn or Si.
[0056] The material of the second doped semiconductor contact layer 111 can be InGaAs, etc., and is usually doped with Zn or C.
[0057] The material of the third electrode metal layer 112 can be one or more of Au, Ge, Ni, Ti, Cr, Pt, etc.
[0058] The material of the fourth electrode metal layer 113 can be one or more of Au, Ge, Ni, Ti, Cr, Pt, etc.
[0059] The anti-reflective layer 114 can be made of dielectric materials, such as one or more of SiO2, SiNx, and BCB.
[0060] This disclosure also provides a method for fabricating a heterogeneous integrated electro-absorption modulated laser structure, comprising: operations S1 to S7.
[0061] In operation S1, a semiconductor material layer of the electroabsorption modulator is sequentially grown on the first substrate using metal-organic chemical vapor deposition or molecular beam epitaxy.
[0062] In operation S2, the electro-absorption modulator waveguide structure and metal electrodes are formed through photolithography and etching processes.
[0063] In operation S3, a semiconductor material layer of the semiconductor laser is sequentially grown on the second substrate using metal-organic chemical vapor deposition or molecular beam epitaxy.
[0064] In operation S4, the grating, waveguide, and metal electrodes of the semiconductor laser are fabricated using photolithography and etching processes.
[0065] In operation S5, the prepared semiconductor laser is peeled off from the second substrate and transferred to the first substrate of the electro-absorption modulator using micro-transfer technology, or the prepared electro-absorption modulator is peeled off from the first substrate and transferred to the second substrate of the semiconductor laser using micro-transfer technology.
[0066] In operation S6, high-precision alignment of the semiconductor laser waveguide and the electro-absorption modulator waveguide is achieved by using alignment marks.
[0067] In operation S7, an anti-reflection layer is prepared in the middle of the contact interface between the aligned semiconductor laser and the electro-absorption modulator, and finally a heterogeneous integrated electro-absorption modulated laser structure is obtained.
[0068] To make the fabrication method of the heterogeneous integrated electro-absorption modulated laser structure disclosed herein clearer, the specific details of the operation process will be described below, for example:
[0069] First, semiconductor material layers of the electroabsorption modulator, such as a first N-type semiconductor layer 102, a first active region 103, a first P-type semiconductor layer 104, and a first heavily doped semiconductor contact layer 105, are sequentially grown on the first substrate 101 using metal-organic chemical vapor deposition or molecular beam epitaxy deposition.
[0070] Then, the first waveguide 116 and pillars (first pillar 117, second pillar 118, and third pillar 119) of the electroabsorption modulator are prepared by photolithography and dry (or wet) etching, and the process stops at the first N-type semiconductor layer 102.
[0071] Furthermore, the first region 120 surrounding the third pillar 119 and the second region 122 between the electroabsorption modulator and the semiconductor laser are etched to the substrate 101 by photolithography and dry (or wet) etching.
[0072] Furthermore, the second electrode metal layer 115 is prepared through processes such as photolithography, sputtering, electron beam evaporation, stripping, electroplating, and chemical etching.
[0073] Furthermore, after spin coating, dry etching passivation, and planarization of the dielectric layer 121, the top of the first waveguide 116 and the top of the second electrode metal layer 115 are exposed.
[0074] Furthermore, the first electrode metal layer 106 is prepared through processes such as photolithography, sputtering, electron beam evaporation, stripping, electroplating, and chemical etching.
[0075] Secondly, a semiconductor material layer for the semiconductor laser is grown on another III-V group (including InP, etc.) substrate (i.e., the second substrate) using metal-organic chemical vapor deposition or molecular beam epitaxy deposition methods. For example, a second N-type semiconductor layer 107 and a grating layer 108 are grown on the substrate.
[0076] Furthermore, a grating is fabricated on the grating layer 108 by photolithography and dry (or wet) etching.
[0077] Furthermore, a second active region 109, a second P-type semiconductor layer 110, and a second heavily doped semiconductor contact layer 111 are grown on the grating of the grating layer 108 using metal-organic chemical vapor deposition or molecular beam epitaxy.
[0078] Furthermore, the second waveguide 123 of the semiconductor laser, after photolithography and dry (or wet) etching, typically stops above the second active region 109.
[0079] Furthermore, after photolithography and dry (or wet) etching of the second region 124, the etching process typically stops at the second N-type semiconductor layer 107.
[0080] Furthermore, the fourth electrode metal layer 113 is prepared through processes such as photolithography, sputtering, electron beam evaporation, stripping, electroplating, and chemical etching.
[0081] Furthermore, the third electrode metal layer 112 is prepared through processes such as photolithography, sputtering, electron beam evaporation, stripping, electroplating, and chemical etching.
[0082] Furthermore, the semiconductor laser structure is peeled off from the native substrate through processes such as photolithography, dry etching, and wet etching, and then the semiconductor laser is transferred from the native substrate to the first substrate 101 of the electro-absorption modulator using micro-transfer technology; or the electro-absorption modulator is peeled off from the native substrate and transferred from the native substrate to the second substrate of the semiconductor laser using micro-transfer technology.
[0083] Furthermore, high-precision alignment of the semiconductor laser waveguide with the electro-absorption modulator waveguide is achieved through alignment marks, including in both the horizontal and vertical directions.
[0084] Finally, an anti-reflection layer 104 was prepared between the semiconductor laser and the modulator through spin coating, deposition, and etching processes, ultimately obtaining a heterogeneous integrated electro-absorption modulated laser structure.
[0085] The heterogeneous integrated electroabsorption modulated laser structure fabrication method disclosed herein achieves heterogeneous integration (EML) by designing, fabricating, and testing a semiconductor laser and an electroabsorption modulator separately on different substrates, and then using micro-transfer technology to transfer the semiconductor laser thin film onto the substrate of the electroabsorption modulator (or vice versa). This method allows for parallel optimization design, epitaxial growth, fabrication processes, and testing of the semiconductor laser and the electroabsorption modulator, avoiding problems such as material compatibility, process complexity, and interface defects controlled by epitaxial growth associated with multiple epitaxy and continuous fabrication on the same substrate. Thus, while achieving high speed and high power, it significantly simplifies the fabrication process, improves device consistency and yield, and provides a novel technological path for the efficient and low-cost manufacturing of next-generation high-speed optical communication chips.
[0086] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram or flowchart, and combinations of blocks in a block diagram or flowchart, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions. Those skilled in the art will understand that the features described in the various embodiments of the present disclosure can be combined and / or combined in various ways, even if such combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of this disclosure may be combined and / or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.
[0087] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.
Claims
1. A heterogeneous integrated electro-absorption modulated laser structure, characterized in that, The structure includes: An electroabsorption modulator includes a substrate (101), a first N-type semiconductor layer (102), a first active region (103), a first P-type semiconductor layer (104), and a first heavily doped semiconductor contact layer (105) sequentially stacked on the substrate (101). The semiconductor laser includes a second N-type semiconductor layer (107), a grating layer (108), a second active region (109), a second P-type semiconductor layer (110), and a second heavily doped semiconductor contact layer (111) sequentially stacked on the substrate (101). An anti-reflection layer (114) is disposed between the electroabsorption modulator and the semiconductor laser; The electroabsorption modulator and the semiconductor laser are prefabricated independently on different substrates and heterogeneously integrated using micro-transfer printing technology.
2. The structure according to claim 1, characterized in that, In the electroabsorption modulator, the first N-type semiconductor layer (102) and the first P-type semiconductor layer (104) are configured to be interchangeable.
3. The structure according to claim 1, characterized in that, In the semiconductor laser, the second N-type semiconductor layer (107) and the second P-type semiconductor layer (110) are configured to be interchangeable.
4. The structure according to claim 1, characterized in that, The electroabsorption modulator further includes: a first electrode metal layer (106) and a second electrode metal layer (115). The first electrode metal layer (106) is disposed on the first heavily doped semiconductor contact layer (105), and the second electrode metal layer (115) is disposed on the first N-type semiconductor layer (102).
5. The structure according to claim 1, characterized in that, The semiconductor laser also includes a third electrode metal layer (112) and a fourth electrode metal layer (113). The third electrode metal layer (112) is disposed on the second heavily doped semiconductor contact layer (111), and the fourth electrode metal layer (113) is disposed on the second N-type semiconductor layer (107).
6. The structure according to claim 1, characterized in that, The substrate is configured as a group III-V semi-insulating material, which includes InP.
7. The structure according to claim 1, characterized in that, The first active region (103) is configured as a multi-quantum well material, a bulk material or a quantum dot material.
8. The structure according to claim 1, characterized in that, The second active region (109) is configured as a multi-quantum well material or a quantum dot material.
9. The structure according to claim 1, characterized in that, The material of the antireflective layer (114) is configured as a dielectric material, which includes one or more of SiO2, SiNx, and BCB.
10. A method for fabricating a heterogeneous integrated electro-absorption modulated laser structure, characterized in that, The method includes: Semiconductor material layers for an electroabsorption modulator are sequentially grown on a first substrate using metal-organic chemical vapor deposition or molecular beam epitaxy. The waveguide structure and metal electrodes of the electro-absorption modulator are formed by photolithography and etching processes. Semiconductor material layers for semiconductor lasers are sequentially grown on a second substrate using metal-organic chemical vapor deposition or molecular beam epitaxy. The gratings, waveguides, and metal electrodes of semiconductor lasers are fabricated using photolithography and etching processes. The prepared semiconductor laser is peeled off from the second substrate and transferred to the first substrate of the electro-absorption modulator using micro-transfer technology, or the prepared electro-absorption modulator is peeled off from the first substrate and transferred to the second substrate of the semiconductor laser using micro-transfer technology. High-precision alignment of semiconductor laser waveguides with electro-absorption modulator waveguides is achieved by using alignment marks. An anti-reflection layer is fabricated at the interface between the aligned semiconductor laser and the electro-absorption modulator, ultimately yielding a heterogeneous integrated electro-absorption modulated laser structure.