Semiconductor measurement parameter correction method and device, computer equipment and storage medium

Abstract

The invention relates to a semiconductor measurement parameter correction method and device, computer equipment and a storage medium, and relates to the technical field of semiconductor measurement. The method comprises the following steps: acquiring a to-be-corrected measurement parameter and a reference measurement parameter range; under the condition that the to-be-corrected measurement parameter is not in the reference measurement parameter range, parameter correction is carried out on the to-be-corrected measurement parameter, and a corrected measurement parameter is obtained; wherein the correction measurement parameter is within the range of the reference measurement parameter; measuring the standard sheet based on the corrected measurement parameter to obtain corrected measurement data; calculating an error between the corrected measurement data and the reference measurement data to obtain a measurement error; and under the condition that the measurement error is smaller than or equal to the preset error, taking the corrected measurement parameter as a target measurement parameter. According to the semiconductor measurement parameter correction method, different measurement parameters can be subjected to unification correction, the corrected measurement parameters can meet measurement requirements, and unification of measurement standards is completed.

Description

Technical Field

[0001] This application relates to the field of semiconductor measurement technology, and in particular to a method, apparatus, computer device, and storage medium for correcting semiconductor measurement parameters. Background Technology

[0002] In semiconductor manufacturing, wafer measurement is the cornerstone of ensuring process stability and product quality. The physical quantities measured on wafers can include thickness, stripe width, defects, mechanical properties, and deformation. In metrology equipment, different products and different measured physical quantities correspond to different measurement parameters. Because semiconductor foundries produce a wide variety of products, the number of measurement parameters increases with the quantity of products manufactured. However, when personnel with varying experience create new measurement parameters, inconsistencies can arise, leading to a lack of standardized measurement practices. Summary of the Invention

[0003] Therefore, it is necessary to provide a method, apparatus, computer equipment, and storage medium for correcting semiconductor measurement parameters that can unify measurement standards, in order to address the aforementioned technical problems.

[0004] In a first aspect, this application provides a method for correcting semiconductor measurement parameters. The method includes: acquiring a measurement parameter to be corrected and a reference measurement parameter range; when the measurement parameter to be corrected is not within the range of the reference measurement parameters, correcting the measurement parameter to be corrected to obtain a corrected measurement parameter; wherein the corrected measurement parameter is within the range of the reference measurement parameters; measuring a standard wafer based on the corrected measurement parameter to obtain corrected measurement data; calculating the error between the corrected measurement data and the reference measurement data to obtain a measurement error; and when the measurement error is less than or equal to a preset error, using the corrected measurement parameter as a target measurement parameter.

[0005] In one embodiment, after the step of obtaining the measurement error, the method further includes: if the measurement error is greater than a preset error, proceeding to the step of correcting the measurement parameter to be corrected.

[0006] In one embodiment, after the step of obtaining the measurement parameters to be corrected and the range of the reference measurement parameters, the method further includes: when the measurement parameters to be corrected are within the range of the reference measurement parameters, measuring the standard piece based on the measurement parameters to be corrected to obtain the corrected measurement data.

[0007] In one embodiment, the step of calculating the error between the corrected measurement data and the reference measurement data includes: calculating the average value of the corrected measurement data to obtain the corrected average value; calculating the average value of the reference measurement data to obtain the reference average value; and taking the absolute value of the difference between the corrected average value and the reference average value as the measurement error; wherein the preset error is the standard deviation of the reference measurement data.

[0008] In one embodiment, the method further includes: measuring the standard piece based on reference measurement parameters to obtain raw measurement data; and cleaning the raw measurement data to obtain the reference measurement data.

[0009] In one embodiment, the step of cleaning the original measurement data includes: filtering measurement data from the original measurement data whose deviation from the average value of the original measurement data is greater than a first preset threshold, to obtain filtered measurement data; wherein the first preset threshold is 3 times the standard deviation of the original measurement data; and filtering measurement data from the filtered measurement data whose deviation from the average value of the filtered measurement data is greater than a second preset threshold, to obtain the benchmark measurement data; wherein the second preset threshold is 3 times the standard deviation of the filtered measurement data.

[0010] In one embodiment, the measurement parameter to be corrected includes at least one of: numeric measurement parameters, categorical measurement parameters, and character measurement parameters.

[0011] Secondly, this application also provides a device for correcting semiconductor measurement parameters. The device includes: a parameter acquisition module for acquiring a measurement parameter to be corrected and a reference measurement parameter range; a parameter correction module for correcting the measurement parameter to be corrected when it is outside the reference measurement parameter range, to obtain corrected measurement parameters; wherein the corrected measurement parameters are within the reference measurement parameter range; a data measurement module for measuring a standard wafer based on the corrected measurement parameters to obtain corrected measurement data; an error calculation module for calculating the error between the corrected measurement data and the reference measurement data to obtain a measurement error; and a parameter determination module for using the corrected measurement parameters as target measurement parameters when the measurement error is less than or equal to a preset error.

[0012] Thirdly, this application also provides a computer device. The computer device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the steps of the above-described method for correcting semiconductor measurement parameters.

[0013] Fourthly, this application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program thereon, which, when executed by a processor, implements the steps of the above-described method for correcting semiconductor measurement parameters.

[0014] The aforementioned semiconductor measurement parameter correction method, apparatus, computer equipment, and storage medium correct the measurement parameter to be corrected when it is outside the range of the reference measurement parameter. This corrects the measurement parameter to be corrected, resulting in a corrected measurement parameter within the range of the reference parameter. Then, a standard wafer is measured based on the corrected measurement parameter to obtain corrected measurement data. Finally, the error between the corrected measurement data and the reference measurement data is compared to obtain the measurement error. If the measurement error is less than or equal to a preset error, it indicates that the corrected measurement parameter meets the measurement requirements. At this point, the corrected measurement parameter can be used as the target measurement parameter, completing the parameter correction of the measurement parameter to be corrected. Through the semiconductor measurement parameter correction method of this application, different measurement parameters can be corrected in a consistent manner, ensuring that the corrected measurement parameters meet the measurement requirements and achieving the unification of measurement standards. Attached Figure Description

[0015] Figure 1 This is a flowchart illustrating the correction method in one embodiment;

[0016] Figure 2 This is a flowchart illustrating the correction method in another embodiment;

[0017] Figure 3 This is a flowchart illustrating the process of determining measurement error in one embodiment;

[0018] Figure 4 This is a schematic diagram of the process for obtaining benchmark measurement data in one embodiment;

[0019] Figure 5 This is a schematic diagram of the process for obtaining baseline measurement data in another embodiment;

[0020] Figure 6 This is a schematic diagram of the measurement parameter types in one embodiment;

[0021] Figure 7 This is a schematic diagram of the distribution of raw measurement data in one embodiment;

[0022] Figure 8 This is a schematic diagram illustrating the filtering of raw measurement data in one embodiment;

[0023] Figure 9 This is a schematic diagram illustrating the distribution of filtered measurement data in one embodiment;

[0024] Figure 10This is a schematic diagram illustrating the filtering of measurement data in one embodiment;

[0025] Figure 11 This is a schematic diagram of the distribution of reference measurement data in one embodiment;

[0026] Figure 12 This is a schematic diagram illustrating the distribution of baseline measurement data and new corrected measurement data in one embodiment.

[0027] Figure 13 This is a schematic diagram of the distribution of measurement data before correction in one embodiment;

[0028] Figure 14 This is a schematic diagram of the distribution of corrected measurement data in one embodiment;

[0029] Figure 15 This is a schematic diagram of the correction device in one embodiment;

[0030] Figure 16 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0032] The semiconductor measurement parameter correction method provided in this application can be applied to semiconductor parameter measurement machines or semiconductor manufacturing systems. Different semiconductor parameter measurement machines can perform measurements of different physical quantities of wafers, such as wafer thickness, stripe width, defects, mechanical properties, and deformation. When performing measurements, the semiconductor parameter measurement machine executes pre-set measurement parameters to complete the measurement of a specific physical quantity. Generally, new measurement parameters need to be created for new products. However, due to subjective factors, the newly created measurement parameters may be inconsistent when personnel with different experience create them, leading to inconsistencies in the measurement standards of the measurement machine for a particular physical quantity.

[0033] Based on this, this application proposes a method, apparatus, computer device, and storage medium for correcting semiconductor measurement parameters, which can correct different measurement parameters in a consistent manner, and make the corrected measurement parameters meet the measurement requirements, thereby achieving the unification of measurement standards.

[0034] In one embodiment, such as Figure 1 As shown, a method for correcting semiconductor measurement parameters is provided. Taking the application of this method to a measurement machine as an example, the method includes the following steps:

[0035] Step S110: Obtain the measurement parameters to be corrected and the range of the baseline measurement parameters.

[0036] Specifically, when correcting semiconductor measurement parameters, the first step is to obtain the measurement parameter to be corrected and the reference measurement parameter range. The measurement parameter to be corrected can be a stored, pre-established measurement parameter, while the reference measurement parameter range is a pre-set parameter range corresponding to the type of the measurement parameter to be corrected. By matching the measurement parameter to be corrected, the corresponding reference measurement parameter range can be determined. For example, a certain measurement instrument specifies a reference measurement parameter range for measuring the film thickness of materials such as silicon dioxide, single-crystal silicon, and silicon carbide. After obtaining the measurement parameter to be corrected, the corresponding reference measurement parameter range can be determined by determining the type of film thickness being measured. It is understandable that the measurement parameter to be corrected can also be classified according to parameters such as product type, physical quantity type, and process type to match the corresponding reference measurement parameter range.

[0037] Step S120: If the measurement parameter to be corrected is not within the range of the reference measurement parameter, the measurement parameter to be corrected is corrected to obtain the corrected measurement parameter.

[0038] Specifically, after obtaining the measurement parameter to be corrected and the reference measurement parameter range, it is determined whether the measurement parameter to be corrected is within the reference measurement parameter range. If the measurement parameter to be corrected is not within the reference measurement parameter range, parameter correction is performed on the measurement parameter to be corrected, thereby obtaining a corrected measurement parameter within the reference measurement parameter range. When correcting the measurement parameter to be corrected, correction can be performed based on a preset threshold or preset parameters, as long as the corrected measurement parameter is within the reference measurement parameter range.

[0039] Step S130: Measure the standard piece based on the corrected measurement parameters to obtain corrected measurement data.

[0040] Specifically, after obtaining the corrected measurement parameters through parameter correction, the measurement equipment can measure the standard sheet based on the corrected measurement parameters to obtain corrected measurement data. It is understandable that different types of corrected measurement parameters require different types of standard sheets, and correspondingly, the obtained corrected measurement data will also differ. For example, when the corrected measurement parameters are used for film thickness measurement, the standard sheet is used for film thickness measurement, and the obtained corrected measurement data is the film thickness data; when the corrected measurement parameters are used for defect measurement, the standard sheet is used for defect measurement, and the obtained corrected measurement data is the defect data.

[0041] Step S140: Calculate the error between the corrected measurement data and the baseline measurement data to obtain the measurement error.

[0042] Specifically, after measuring the standard sample and obtaining corrected measurement data, the error between the corrected measurement data and the baseline measurement data is calculated, thus obtaining the measurement error. The baseline measurement data is the pre-stored standard measurement data of the standard sample, which is used to measure the accuracy of the corrected measurement data. The smaller the measurement error, the smaller the error between the corrected measurement data and the baseline measurement data, and the more standardized the corrected measurement parameters are. When calculating the error between the corrected measurement data and the baseline measurement data, methods such as comparing the standard deviation and comparing the average value can be used to determine the measurement error.

[0043] Step S150: If the measurement error is less than or equal to the preset error, the corrected measurement parameter is used as the target measurement parameter.

[0044] Specifically, after calculating the measurement error between the corrected measurement data and the baseline measurement data, the magnitude of the measurement error is compared with the preset error. If the measurement error is less than or equal to the preset error, it indicates that the corrected measurement data obtained by the measuring machine according to the corrected measurement parameters meets the measurement error requirements, the measurement results for the standard piece are relatively accurate, and it meets the setting requirements of the measurement parameters. In this case, the corrected measurement parameters are used as the target measurement parameters. The target measurement parameters are used to replace the original measurement parameters to be corrected, thereby completing the correction of the measurement parameters to be corrected.

[0045] The aforementioned method for correcting semiconductor measurement parameters involves correcting the parameter to be corrected when it is outside the range of the reference measurement parameters. This corrects the parameter to be corrected, resulting in a corrected measurement parameter within the reference range. Then, a standard wafer is measured based on the corrected measurement parameters to obtain corrected measurement data. Finally, the error between the corrected measurement data and the reference measurement data is compared to obtain the measurement error. If the measurement error is less than or equal to a preset error, it indicates that the corrected measurement parameter meets the measurement requirements. At this point, the corrected measurement parameter can be used as the target measurement parameter, completing the correction of the parameter to be corrected. This method for correcting semiconductor measurement parameters allows for the consistent correction of different measurement parameters, ensuring that the corrected parameters meet the measurement requirements and achieving a unified measurement standard.

[0046] In one embodiment, such as Figure 2 As shown, after obtaining the measurement error in step S140, the method for correcting semiconductor measurement parameters further includes: if the measurement error is greater than a preset error, proceeding to the step of correcting the measurement parameters to be corrected.

[0047] Specifically, in this embodiment, after calculating the measurement error between the corrected measurement data and the baseline measurement data, the magnitude of the measurement error is compared with the preset error. If the measurement error is greater than the preset error, it indicates that the corrected measurement data obtained by the measuring machine based on the corrected measurement parameters does not meet the measurement error requirements, and the measurement result of the standard piece has a large error, which does not meet the setting requirements of the measurement parameters. At this time, the step of correcting the measurement parameters to be corrected is entered to readjust the measurement parameters, and the standard piece is measured again according to the new corrected measurement parameters. Then, the magnitude of the measurement error is compared with the preset error again until the entire correction process is completed.

[0048] In one embodiment, such as Figure 2 As shown, after obtaining the measurement parameters to be corrected and the reference measurement parameter range in step S110, the method for correcting semiconductor measurement parameters further includes: when the measurement parameters to be corrected are within the reference measurement parameter range, measuring the standard wafer based on the measurement parameters to be corrected to obtain corrected measurement data.

[0049] Specifically, in this embodiment, after obtaining the measurement parameter to be corrected and the reference measurement parameter range, it is determined whether the measurement parameter to be corrected is within the reference measurement parameter range. If the measurement parameter to be corrected is within the reference measurement parameter range, it means that the parameter setting of the measurement parameter to be corrected meets the requirements of the reference measurement parameter range, and there is no need to correct the parameter of the measurement parameter to be corrected. At this time, the standard piece is directly measured according to the measurement parameter to be corrected without parameter correction, and the measurement result is used as the corrected measurement data to continue to execute the subsequent measurement error judgment steps.

[0050] In one embodiment, such as Figure 3 As shown, step S140, which involves calculating the error between the corrected measurement data and the reference measurement data, includes:

[0051] Step S141: Calculate the average value of the corrected measurement data to obtain the corrected average value;

[0052] Step S142: Calculate the average value of the baseline measurement data to obtain the baseline average value;

[0053] Step S143: The absolute value of the difference between the corrected average value and the baseline average value is taken as the measurement error.

[0054] Specifically, in this embodiment, the error between the corrected measurement data and the baseline measurement data is calculated by comparing their average values. First, the average value of the corrected measurement data is calculated to obtain the corrected average value M. C And calculate the average value of the baseline measurement data to obtain the baseline average value M. GThen, calculate the absolute value of the difference between the corrected average and the baseline average, which is the measurement error. In this embodiment, the preset error is set as the standard deviation of the benchmark measurement data, and the standard deviation of the benchmark measurement data is set as follows: In subsequent judgments on the magnitude of the measurement error versus the preset error, the judgment is made... This is used to determine whether to use the corrected measurement parameter as the target measurement parameter.

[0055] In one embodiment, such as Figure 4 As shown, the methods for correcting semiconductor measurement parameters also include:

[0056] Step S160: Measure the standard piece based on the reference measurement parameters to obtain the original measurement data.

[0057] Specifically, in this embodiment, during the process of determining the benchmark measurement data, the standard piece is first measured using benchmark measurement parameters to obtain the original measurement data. The benchmark measurement parameters are pre-determined measurement parameters used to determine the measurement standard, and their measurement data for the standard piece can be considered accurate. When measuring the standard piece using the benchmark measurement parameters, multiple measurements can be performed to obtain the original measurement data.

[0058] Step S170: Clean the raw measurement data to obtain the baseline measurement data.

[0059] Specifically, due to random errors in the measurement process, the obtained measurement data will also contain erroneous data. Therefore, data cleaning is necessary to remove outliers and obtain more accurate baseline measurement data. Data cleaning can be performed by directly removing outliers, replacing extreme values ​​with values ​​closer to other data points, replacing outliers with statistical values ​​(such as the mean or median), and transforming the data (such as logarithmic transformation) to reduce the impact of outliers.

[0060] In one embodiment, such as Figure 5 As shown, step S170, the step of cleaning the raw measurement data, includes:

[0061] Step S171: Filter the measurement data from the original measurement data whose deviation from the average value of the original measurement data is greater than a first preset threshold to obtain filtered measurement data.

[0062] Specifically, in this embodiment, during the data cleaning process of the original measurement data, the average value M1 of the original measurement data is calculated first, and then the standard deviation of the original measurement data is calculated. Then, for each measurement data X1 in the original measurement data, a judgment is made. If the deviation between the measurement data X1 and the average value M1 of the original measurement data is greater than the first preset threshold... ,Right now If the value is an outlier, it will be filtered out, and the filtered data will be used as the filtered measurement data.

[0063] Step S172: Filter out measurement data whose deviation from the average value of the filtered measurement data is greater than a second preset threshold from the filtered measurement data to obtain benchmark measurement data.

[0064] Specifically, after obtaining the filtration measurement data, first calculate the average value M2 of the filtration measurement data, and then calculate the standard deviation of the filtration measurement data. Then, for each measurement data X2 in the filtered measurement data, a judgment is made. If the deviation between the measurement data X2 and the average value M2 of the filtered measurement data is greater than the second preset threshold... ,Right now If an outlier is found, it is considered an outlier and filtered out, with the filtered data used as the final baseline measurement data. It is understood that in this embodiment, data cleaning of the original measurement data is completed by filtering outliers greater than 3 times the standard deviation twice. In some other embodiments, data cleaning of the original measurement data can also be completed by iterating through filtering outliers greater than 3 times the standard deviation 3 to 5 times.

[0065] In one embodiment, such as Figure 6 As shown, the measurement parameters to be corrected include at least one of the following: numeric measurement parameters, categorical measurement parameters, and character measurement parameters. Specifically, numeric measurement parameters are parameter values ​​represented by numbers, such as 3.6, 25, and 573 in the illustration. Categorical measurement parameters are parameter values ​​used to classify measurement modes; for example, "Auto" in the illustration represents the measurement machine in automatic control mode, "SAT" represents the measurement machine using Segmented Auto Threshold (SAT) mode, and "EC" represents the measurement machine using Edge Contrast (EC) mode. Character measurement parameters are measurement parameters represented by characters, used to represent different subroutines, and can be arbitrarily set by the user, such as "abc," "abcd," and "Xabcd" in the illustration. It is understood that the measurement parameters differ in different measurement programs of different measurement machines; when selecting the measurement parameters to be corrected, the selection and setting can be made according to the specific parameter correction needs.

[0066] The following describes in detail the semiconductor measurement parameter correction method of this application using a specific embodiment. In this embodiment, the measurement parameters to be corrected, the corrected measurement parameters, and the reference measurement parameters are all used in defect measurement of a defect inspection machine. In determining the reference measurement data, firstly, defect measurement is performed on 50 standard wafers using pre-set reference measurement parameters to obtain the original measurement data. The distribution of the original measurement data is as follows: Figure 7 As shown. After obtaining the raw measurement data, the mean M1 and standard deviation of the raw measurement data are calculated. Then, from the original measurement data, those with a deviation greater than the average value of the original measurement data are selected. Measurement data, such as Figure 8 As shown in the figure, the first threshold line At this point, the measurement data exceeding the first threshold line is D. P1 and D P2 After filtering out measurement data with large deviations, the result is as follows: Figure 9 The filtered measurement data shown is as follows. It is understandable that a threshold line still exists. However, in defect measurement, smaller measurement values ​​are considered true data, therefore, measurements below the threshold line do not need to be processed. The measurement data is filtered. After obtaining the filtered measurement data, the mean M2 and standard deviation of the filtered measurement data are calculated. Then, from the filtered measurement data, those with a deviation greater than the average value of the filtered measurement data are selected. Measurement data, such as Figure 10 As shown in the figure, the second threshold line At this point, the measurement data exceeding the second threshold line is D. P3 and D P4 After filtering out measurement data with large deviations, the result is as follows: Figure 11 The reference measurement data shown.

[0067] After obtaining the measurement parameters to be corrected and the reference measurement parameter ranges, it is determined whether the measurement parameters to be corrected are within the reference measurement parameter ranges. The table below shows a comparison of the measurement parameters to be corrected and the reference measurement parameter ranges in this embodiment:

[0068]

[0069] Among the measurement parameters to be corrected, A1 and A2 are numeric measurement parameters, B1 and B2 are categorical measurement parameters, and C1 is a character measurement parameter. After comparing with the baseline measurement parameter range, it was determined that parameters 2 and 3 exceed the baseline measurement parameter range. Therefore, parameter correction is required. The comparison table below shows the corrected measurement parameters and the baseline measurement parameter range after performing a parameter correction using a preset threshold:

[0070]

[0071] After one parameter correction, both parameters 2 and 3 remain within the range of the baseline measurement parameters. At this point, measurements are performed on the standard piece based on the corrected measurement parameters to obtain corrected measurement data. The error between the corrected measurement data and the baseline measurement data is calculated by comparing their average values. First, the average value of the corrected measurement data is calculated to obtain the corrected average value M. C1 And calculate the average value of the baseline measurement data to obtain the baseline average value M. G Simultaneously calculate the standard deviation of the benchmark measurement data. Then, calculate the absolute value of the difference between the corrected average and the baseline average, which is the measurement error. In this embodiment, The measurement error is relatively large, requiring the measurement parameters to be readjusted. After readjusting the measurement parameters again using a preset threshold, the comparison table between the readjusted measurement parameters and the baseline measurement parameters is shown below:

[0072]

[0073] In the re-correction of the measurement parameters, only the A1 value of parameter 3 was modified. After the parameters were corrected, the standard piece was measured according to the revised measurement parameters to obtain new corrected measurement data. The error between the new corrected measurement data and the baseline measurement data was calculated by comparing their average values. First, the average value of the new corrected measurement data was calculated to obtain the corrected average value M. C2 The measurement error at this time is .like Figure 12 The image shows a comparison chart of the new corrected measurement data and the baseline measurement data. This was achieved through calculation... The measurement error meets the preset error requirements. Therefore, the corrected measurement parameters are used as the final target measurement parameters to complete the correction of the measurement parameters to be corrected.

[0074] like Figure 13 and Figure 14As shown, Product 1 is a schematic diagram of the defect distribution after measuring Product 1 using benchmark measurement parameters. Figure 13 In the diagram, before the correction, product 2 is shown as a defect distribution diagram after the product 2 was measured directly using the measurement parameters to be corrected. Figure 14 In the figure, the defect distribution of Product 2 after correction is shown after measurement using the target measurement parameters. As can be seen from the figure, after correcting the measurement parameters to be corrected using the semiconductor measurement parameter correction method of this application, different measurement parameters can be consistent and corrected so that the corrected measurement parameters can meet the measurement requirements, thus achieving the unification of measurement standards.

[0075] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0076] Based on the same inventive concept, this application also provides a semiconductor measurement parameter correction apparatus for implementing the semiconductor measurement parameter correction method described above. The solution provided by this apparatus is similar to the implementation described in the above method; therefore, the specific limitations in one or more semiconductor measurement parameter correction apparatus embodiments provided below can be found in the limitations of the semiconductor measurement parameter correction method described above, and will not be repeated here.

[0077] In one embodiment, such as Figure 15 As shown, a semiconductor measurement parameter correction device is provided, comprising: a parameter acquisition module 210, a parameter correction module 220, a data measurement module 230, an error calculation module 240, and a parameter determination module 250, wherein:

[0078] The parameter acquisition module 210 is used to acquire the measurement parameters to be corrected and the range of the reference measurement parameters.

[0079] The parameter correction module 220 is used to correct the parameters of the measurement to be corrected when the measurement parameter to be corrected is not within the range of the reference measurement parameters, so as to obtain the corrected measurement parameters; wherein the corrected measurement parameters are within the range of the reference measurement parameters.

[0080] Data measurement module 230 is used to measure the standard piece based on the corrected measurement parameters to obtain corrected measurement data;

[0081] The error calculation module 240 is used to calculate the error between the corrected measurement data and the reference measurement data to obtain the measurement error.

[0082] The parameter determination module 250 is used to take the corrected measurement parameter as the target measurement parameter when the measurement error is less than or equal to the preset error.

[0083] In one embodiment, the parameter determination module 250 is further configured to proceed to the step of parameter correction of the measurement parameter to be corrected when the measurement error is greater than the preset error.

[0084] In one embodiment, the parameter correction module 220 is further configured to measure the standard piece based on the measurement parameter to be corrected, and obtain corrected measurement data, when the measurement parameter to be corrected is within the range of the reference measurement parameter.

[0085] In one embodiment, the error calculation module 240 is further configured to calculate the average value of the corrected measurement data to obtain the corrected average value; calculate the average value of the benchmark measurement data to obtain the benchmark average value; and use the absolute value of the difference between the corrected average value and the benchmark average value as the measurement error; wherein the preset error is the standard deviation of the benchmark measurement data.

[0086] In one embodiment, the semiconductor measurement parameter correction device further includes: a data processing module, used to measure a standard wafer based on reference measurement parameters to obtain raw measurement data; and to perform data cleaning on the raw measurement data to obtain reference measurement data.

[0087] In one embodiment, the data processing module is further configured to filter measurement data from the original measurement data whose deviation from the average value of the original measurement data is greater than a first preset threshold, to obtain filtered measurement data; wherein the first preset threshold is 3 times the standard deviation of the original measurement data; and to filter measurement data from the filtered measurement data whose deviation from the average value of the filtered measurement data is greater than a second preset threshold, to obtain baseline measurement data; wherein the second preset threshold is 3 times the standard deviation of the filtered measurement data.

[0088] In one embodiment, the measurement parameter to be corrected includes at least one of the following: numeric measurement parameters, categorical measurement parameters, and character measurement parameters.

[0089] Each module in the aforementioned semiconductor measurement parameter correction device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0090] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 16 As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When executed by the processor, the computer program implements a method for correcting semiconductor measurement parameters. The display unit is used to form a visually visible image and can be a display screen, projection device, or virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0091] Those skilled in the art will understand that Figure 16 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0092] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above-described method embodiments.

[0093] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the steps in the above-described method embodiments.

[0094] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0095] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0096] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for correcting semiconductor measurement parameters, characterized in that, The method comprises: acquiring a to-be-corrected measurement parameter and a reference measurement parameter range; in a case where the to-be-corrected measurement parameter is not within the reference measurement parameter range, performing parameter correction on the to-be-corrected measurement parameter to obtain a corrected measurement parameter; wherein the corrected measurement parameter is within the reference measurement parameter range; performing measurement on a standard wafer based on the corrected measurement parameter to obtain corrected measurement data; calculating an error between the corrected measurement data and reference measurement data to obtain a measurement error; in a case where the measurement error is less than or equal to a preset error, taking the corrected measurement parameter as a target measurement parameter.

2. The method of claim 1, wherein After the step of obtaining the measurement error, the method further comprises: in a case where the measurement error is greater than the preset error, entering the step of performing parameter correction on the to-be-corrected measurement parameter.

3. The method of claim 1, wherein the semiconductor metrology parameter is a thickness of a layer of material on a semiconductor wafer. After the step of acquiring the to-be-corrected measurement parameter and the reference measurement parameter range, the method further comprises: in a case where the to-be-corrected measurement parameter is within the reference measurement parameter range, performing measurement on the standard wafer based on the to-be-corrected measurement parameter to obtain the corrected measurement data.

4. The method of claim 1, wherein The step of calculating the error between the corrected measurement data and the reference measurement data comprises: calculating an average value of the corrected measurement data to obtain a corrected average value; calculating an average value of the reference measurement data to obtain a reference average value; taking an absolute value of a difference between the corrected average value and the reference average value as the measurement error; wherein the preset error is a standard deviation of the reference measurement data.

5. The method of claim 1, wherein The method further comprises: performing measurement on the standard wafer based on a reference measurement parameter to obtain original measurement data; performing data cleaning on the original measurement data to obtain the reference measurement data.

6. The method of claim 5, wherein the semiconductor metrology parameter is corrected by: The step of performing data cleaning on the original measurement data comprises: filtering, from the original measurement data, measurement data having a deviation from an average value of the original measurement data greater than a first preset threshold value to obtain filtered measurement data; wherein the first preset threshold value is 3 times a standard deviation of the original measurement data; filtering, from the filtered measurement data, measurement data having a deviation from an average value of the filtered measurement data greater than a second preset threshold value to obtain the reference measurement data; wherein the second preset threshold value is 3 times a standard deviation of the filtered measurement data.

7. The method of claim 1, wherein The to-be-corrected measurement parameter comprises at least one of a numerical measurement parameter, a category measurement parameter, and a character measurement parameter.

8. A semiconductor metrology parameter correction device, characterized by, The device comprises: a parameter acquisition module configured to acquire a to-be-corrected measurement parameter and a reference measurement parameter range; a parameter correction module configured to, in a case where the to-be-corrected measurement parameter is not within the reference measurement parameter range, perform parameter correction on the to-be-corrected measurement parameter to obtain a corrected measurement parameter; wherein the corrected measurement parameter is within the reference measurement parameter range; a data measurement module configured to perform measurement on a standard wafer based on the corrected measurement parameter to obtain corrected measurement data; an error calculation module configured to calculate an error between the corrected measurement data and reference measurement data to obtain a measurement error; A parameter determining module is configured to determine the modified metrology parameter as a target metrology parameter if the metrology error is less than or equal to a preset error. 9.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-8 when the computer program is executed by the processor. The computer program is executed by the processor to implement the steps of the method of any one of claims 1-7.

10. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method of any one of claims 1-7.

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