Manufacturing method of semiconductor device and semiconductor device
By forming a reflective light absorption layer on the surface of semiconductor devices to absorb and remove reflected light, the problem of local high temperature caused by reflected light interference during laser annealing is solved, ensuring the yield and performance of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-19
- Publication Date
- 2026-03-24
AI Technical Summary
During semiconductor device manufacturing, interference of reflected light at the boundary between the active region and the shallow trench isolation region during laser annealing can lead to localized high temperatures, affecting device performance.
A reflective light absorption layer is formed on the surface of a semiconductor device to absorb and remove reflected light, thereby preventing interference between the reflected light and the incident light. Amorphous carbon is used as the absorbing material, with a thickness of 1000-1500 angstroms. The absorption layer is removed by an oxygen plasma ashing process.
This avoids localized high temperatures, ensuring the yield and performance of semiconductor devices and preventing performance impact.
Smart Images
Figure CN121729059A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor manufacturing technology, and more specifically, to a method for manufacturing a semiconductor device and a semiconductor device. Background Technology
[0002] In related technologies, when laser annealing is performed on semiconductor devices, when the incident laser light irradiates the semiconductor device, reflected light is easily generated at the junction of the active region and the shallow trench isolation region. The interaction between the reflected light and the incident light can easily lead to local high temperatures at the junction of the active region and the shallow trench isolation region, which will affect the performance of the manufactured semiconductor device. Summary of the Invention
[0003] The purpose of this disclosure is to provide a method for manufacturing a semiconductor device and a semiconductor device in order to solve the problems in the aforementioned related technologies.
[0004] To achieve the above objectives, one aspect of this disclosure provides a method for manufacturing a semiconductor device, the method comprising a laser annealing process; The laser annealing process includes: A light-absorbing layer is formed on the surface of a semiconductor device; A laser beam is irradiated onto the light-reflecting absorption layer. The laser beam passes through the light-reflecting absorption layer and heats and anneals the semiconductor device. The light-reflecting absorption layer is used to absorb the light reflected from the semiconductor device. After the semiconductor device is heated and annealed, the light-absorbing layer is removed.
[0005] Optionally, forming a light-absorbing reflective layer on the surface of the semiconductor device includes: A light-absorbing material is deposited on the surface of the semiconductor device to form the light-absorbing layer.
[0006] Optionally, the light-absorbing material includes amorphous carbon.
[0007] Optionally, the thickness of the reflective light absorbing layer is 1000 angstroms to 1500 angstroms.
[0008] Optionally, the temperature at which the laser heats the semiconductor device is set to 1250℃-1350℃.
[0009] Optionally, removing the reflective light-absorbing layer includes: The light-absorbing layer is removed using an oxygen plasma ashing process.
[0010] Optionally, the manufacturing method further includes: Before the laser annealing process, an active region is formed, and a shallow trench isolation region is formed on the active region; A resistor is formed on the shallow trench isolation region, and the light-absorbing layer is used to absorb the reflected light at the intersection of the shallow trench isolation region and the active region.
[0011] Optionally, forming a shallow trench isolation region on the active region includes: A trench is formed in the active region, and silica is deposited in the trench to form the shallow trench isolation region.
[0012] Optionally, the manufacturing method further includes: An oxide layer is deposited on the active region, the shallow trench isolation region, and the resistor, and the light-absorbing layer covers the oxide layer; After removing the light-absorbing layer, the oxide layer is removed.
[0013] A second aspect of this disclosure also provides a semiconductor device manufactured using the above-described semiconductor device manufacturing method.
[0014] The above technical solution, through the setting of a reflective light absorption layer, can absorb the reflected light generated when laser light shines on the semiconductor device, which can prevent the reflected light from interfering with the incident light, thereby avoiding the phenomenon of local high temperature, thus ensuring the manufacturing of semiconductor devices, ensuring yield, and not affecting the performance of the manufactured semiconductor devices.
[0015] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0016] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic flowchart of a method for manufacturing a semiconductor device according to one embodiment of the present disclosure; Figure 2 This is a schematic diagram of the structure of a semiconductor device according to one embodiment of the present disclosure before the formation of the reflective light absorbing layer; Figure 3 This is a schematic diagram of the structure of a semiconductor device forming a reflective light-absorbing layer according to one embodiment of the present disclosure; Figure 4 This is a schematic diagram of the structure of a semiconductor device according to one embodiment of the present disclosure under laser irradiation; Figure 5 This is a schematic diagram of the structure of a semiconductor device with a reflective light-absorbing layer removed according to one embodiment of the present disclosure; Figure 6 This is a schematic diagram of the structure of a semiconductor device with oxide layer removed according to one embodiment of the present disclosure.
[0017] Explanation of reference numerals in the attached figures 1. Semiconductor device; 11. Active region; 12. Shallow trench isolation region; 13. Resistor; 14. Oxide layer; 2. Reflective light absorption layer. Detailed Implementation
[0018] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0019] In this disclosure, unless otherwise stated, directional terms such as "above" are generally defined by the orientation of the drawing in the accompanying drawings, and "inner" and "outer" refer to the inner and outer parts of the relevant components. Furthermore, terms such as "first" and "second" are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0020] In the description of this disclosure, it should also be noted that, unless otherwise expressly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can be a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.
[0021] like Figures 1-6 As shown, one aspect of this disclosure provides a method for manufacturing a semiconductor device 1, the method including a laser annealing process.
[0022] Laser annealing processes include: S101. A light-absorbing layer 2 is formed on the surface of the semiconductor device 1.
[0023] The light-reflecting absorption layer 2 is formed before laser irradiation, enabling the light-reflecting absorption layer 2 to absorb light reflected from the semiconductor device 1.
[0024] S102. The laser beam is irradiated onto the reflective light absorption layer 2. The laser beam passes through the reflective light absorption layer 2 and heats and anneals the semiconductor device 1. The reflective light absorption layer 2 is used to absorb the light reflected from the semiconductor device 1.
[0025] In this process, the laser light shines on the reflective light absorption layer 2, and can pass through the reflective light absorption layer 2 to shine on the semiconductor device 1, thereby heating the semiconductor device 1 and annealing it. The semiconductor device 1 will generate a reflection effect, causing the laser light to be reflected to form reflected light. When the reflected light interferes with the incident light, it will generate local high temperature, which will affect the semiconductor device 1.
[0026] S103. After heating and annealing the semiconductor device 1, remove the light-absorbing layer 2.
[0027] In the above technical solution, the reflected light absorption layer 2 can absorb the reflected light generated when the laser light shines on the semiconductor device 1, which can prevent the reflected light from interfering with the incident light, thereby avoiding the phenomenon of local high temperature, thus ensuring the manufacturing of the semiconductor device 1, ensuring the yield rate, and not affecting the performance of the manufactured semiconductor device 1.
[0028] Optionally, in one embodiment of this disclosure, forming a light-absorbing reflective layer 2 on the surface of the semiconductor device 1 includes: A light-absorbing material is deposited on the surface of semiconductor device 1 to form a light-absorbing layer 2. The deposition of the light-absorbing material allows it to uniformly cover the top surface of semiconductor device 1, forming a light-absorbing layer 2 of uniform thickness, which can uniformly absorb reflected light. In some examples, the light-absorbing material can be deposited on the surface of semiconductor device 1 using a chemical vapor deposition process.
[0029] Optionally, in one embodiment of this disclosure, the light-absorbing material includes amorphous carbon. Amorphous carbon, also called non-crystalline carbon, lacks a long-range ordered crystal structure but possesses short-range order, enabling it to absorb reflected light. This arrangement facilitates the absorption of reflected light, while also allowing for the easy removal of the amorphous carbon without affecting the performance of the semiconductor device 1.
[0030] Optionally, in one embodiment of this disclosure, the thickness of the reflective light absorbing layer 2 is 1000-1500 angstroms. This arrangement facilitates the absorption of reflected light without affecting the heating and annealing of the semiconductor device 1 by the laser.
[0031] Optionally, in one embodiment of this disclosure, the temperature at which the laser heats the semiconductor device 1 is set to 1250°C-1350°C. Because the reflective light-absorbing layer 2 is provided, its thickness is increased; therefore, increasing the temperature at which the laser heats the semiconductor device 1 ensures the heating and annealing effect on the semiconductor device 1.
[0032] Optionally, in one embodiment of this disclosure, removing the reflective light absorbing layer 2 includes: The reflective light-absorbing layer 2 is removed using an oxygen plasma ashing process. This setup allows for easy removal of the reflective light-absorbing layer 2 without affecting the semiconductor device 1. In the oxygen plasma ashing process, oxygen molecules are excited and ionized in a plasma environment, forming highly reactive monatomic oxygen and other reactive oxygen groups. These reactive groups react chemically with the reflective light-absorbing layer 2 to generate carbon dioxide, which is then removed by a vacuum system, thus achieving the removal of the reflective light-absorbing layer 2.
[0033] Optionally, in one embodiment of this disclosure, the manufacturing method further includes: Before the laser annealing process, an active region 11 is formed, and a shallow groove isolation region 12 is formed on the active region 11; A resistor 13 is formed on the shallow trench isolation region 12, and the light reflection absorption layer 2 is used to absorb the reflected light at the intersection of the shallow trench isolation region 12 and the active region 11.
[0034] The boundary between the shallow trench isolation region 12 and the active region 11 is prone to reflected light, which can lead to localized high temperatures at this boundary, thus affecting the performance of the resistor 13. By using the reflected light absorption layer 2 to absorb the reflected light at the boundary between the shallow trench isolation region 12 and the active region 11, the performance of the resistor 13 can be guaranteed.
[0035] The reflective light absorption layer 2 covers the intersection of the shallow trench isolation region 12 and the active region 11.
[0036] Optionally, in one embodiment of this disclosure, forming a shallow trench isolation region 12 on the active region 11 includes: A trench is formed on the active region 11, and silicon dioxide is deposited in the trench to form a shallow trench isolation region 12. This arrangement facilitates the formation of the shallow trench isolation region 12, providing an isolation effect. The trench can be formed by dry etching, followed by silicon dioxide deposition, and the removal of excess silicon dioxide on the active region 11 to form a smooth surface.
[0037] Optionally, in one embodiment of this disclosure, the manufacturing method further includes: An oxide layer 14 is deposited on the active region 11, the shallow trench isolation region 12, and the resistor 13, and a light-absorbing layer 2 covers the oxide layer 14. The deposited oxide layer 14 provides insulation, protecting the semiconductor device 1 during its manufacturing process.
[0038] After removing the light-absorbing layer 2, the oxide layer 14 is removed. Once laser annealing is complete, the oxide layer 14 can be removed, thus completing the fabrication of the semiconductor device 1.
[0039] A second aspect of this disclosure also provides a semiconductor device 1 manufactured using the manufacturing method of the semiconductor device 1 described above.
[0040] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0041] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0042] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A method for manufacturing a semiconductor device, characterized in that, The manufacturing method includes a laser annealing process; The laser annealing process includes: A light-absorbing layer is formed on the surface of a semiconductor device; A laser beam is irradiated onto the light-reflecting absorption layer. The laser beam passes through the light-reflecting absorption layer and heats and anneals the semiconductor device. The light-reflecting absorption layer is used to absorb the light reflected from the semiconductor device. After the semiconductor device is heated and annealed, the light-absorbing layer is removed.
2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The formation of a light-absorbing reflective layer on the surface of the semiconductor device includes: A light-absorbing material is deposited on the surface of the semiconductor device to form the light-absorbing layer.
3. The method for manufacturing a semiconductor device according to claim 2, characterized in that, The light-absorbing material includes amorphous carbon.
4. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The thickness of the reflective light absorbing layer is 1000 angstroms to 1500 angstroms.
5. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The temperature at which the laser heats the semiconductor device is set to 1250℃-1350℃.
6. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The removal of the reflective light-absorbing layer includes: The light-absorbing layer is removed using an oxygen plasma ashing process.
7. The method for manufacturing a semiconductor device according to any one of claims 1-6, characterized in that, The manufacturing method further includes: Before the laser annealing process, an active region is formed, and a shallow trench isolation region is formed on the active region; A resistor is formed on the shallow trench isolation region, and the light-absorbing layer is used to absorb the reflected light at the intersection of the shallow trench isolation region and the active region.
8. The method for manufacturing a semiconductor device according to claim 7, characterized in that, The formation of the shallow trench isolation region on the active region includes: A trench is formed in the active region, and silica is deposited in the trench to form the shallow trench isolation region.
9. The method for manufacturing a semiconductor device according to claim 7, characterized in that, The manufacturing method further includes: An oxide layer is deposited on the active region, the shallow trench isolation region, and the resistor, and the light-absorbing layer covers the oxide layer; After removing the light-absorbing layer, the oxide layer is removed.
10. A semiconductor device manufactured using the manufacturing method of any one of claims 1-9.