High-voltage power module packaging structure
By using a symmetrically distributed multi-chip and resistor structure and a half-bridge topology circuit design, the problems of current balance and high parasitic parameters in high-voltage silicon carbide power module packaging are solved, thereby improving the stability and reliability of the module.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-25
- Publication Date
- 2026-03-27
AI Technical Summary
Existing high-voltage silicon carbide power module packaging structures cannot guarantee reliability, cannot fully utilize their excellent performance, and have high parasitic parameters when multiple chips are connected in parallel, making it difficult to achieve current balance.
It adopts a multi-chip and multi-resistor symmetrical distribution structure, and forms a half-bridge topology circuit by symmetrically setting current paths and parallel design, combined with bonding wire connection. It uses the mutual inductance cancellation principle to reduce parasitic inductance, increase current carrying capacity and improve current balance.
This achieves balanced current paths within the module, reduces parasitic parameters and losses, and improves the module's operational stability and reliability.
Smart Images
Figure CN121751732A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power semiconductor packaging technology, and in particular to a high-voltage power module packaging structure. Background Technology
[0002] In the power industry, high-voltage, high-power modules are core components of various high-voltage, high-capacity power converters and control equipment, and are widely used in the entire process of renewable energy power collection and grid connection, AC / DC power transmission and grid connection, and flexible power application. Third-generation power semiconductor devices, represented by silicon carbide (i.e., wide-bandgap power semiconductor devices), feature fast switching speeds, low losses, and high operating temperatures, and their performance far surpasses that of existing silicon power semiconductor devices.
[0003] Currently, existing power module packaging structures can be divided into two categories: soldered packaging structures and press-fit packaging structures. High-voltage (6500V and above) silicon-based power modules for power grids typically employ press-fit packaging. In practical applications of power transmission and distribution systems, it is often necessary to connect two discrete press-fit modules in series to form a half-bridge structure, which leads to high parasitic parameters. High-power modules often use a multi-chip parallel connection method. Silicon carbide power chips have high switching speeds, making them more sensitive to parasitic parameters during switching. Furthermore, multiple chips mean a larger overall module parasitic inductance and losses, making it difficult to achieve the current balancing effect of individual chips.
[0004] The packaging technology for high-voltage silicon carbide power modules is not yet mature, which cannot guarantee reliability or fully utilize the excellent performance of high-voltage silicon carbide devices. Therefore, research on high-voltage power modules, especially high-voltage silicon carbide power modules, is crucial for optimizing module structure and improving reliability. Summary of the Invention
[0005] The purpose of this invention is to provide a high-voltage power module packaging structure that achieves highly symmetrical and balanced current paths through a symmetrical distribution of multiple chips and resistors, thereby ensuring consistent parasitic parameters in each current loop within the module and improving the module's operational stability.
[0006] To achieve the above objectives, the present invention is implemented using the following technical solution:
[0007] Firstly, the liner is mounted on the base plate;
[0008] The chip module, including the upper bridge arm chip and the lower bridge arm chip, is mounted on the side of the substrate away from the base plate;
[0009] The first current path includes: the drain of the upper bridge arm chip is connected to a DC positive power terminal; the gate of the upper bridge arm chip is connected to a first terminal of a first gate resistor, and the second terminal of the first gate resistor is connected to a first signal terminal; the source of the upper bridge arm chip is connected to the drain of the lower bridge arm chip and an AC power terminal; the gate of the lower bridge arm chip is connected to a first terminal of a second gate resistor, and the second terminal of the second gate resistor is connected to a second signal terminal; the source of the lower bridge arm chip is connected to a DC negative power terminal.
[0010] The second current path has the same structure as the first current path, and the two are symmetrically arranged about the center line of the liner. The second current path is connected in parallel with the first current path.
[0011] In conjunction with the first aspect, optionally,
[0012] The first end of the DC positive power terminal is used to connect to the positive terminal of an external DC high voltage power supply, and the second end is mounted on the substrate and connected to the upper bridge arm chip through a bonding wire.
[0013] The first end of the DC negative power terminal is used to connect to the negative terminal of an external DC high voltage power supply, and the second end is mounted on the substrate and connected to the lower bridge arm chip through a bonding wire.
[0014] The first end of the AC power terminal is used to output AC power, and the second end is mounted on the substrate and connected to the upper bridge arm chip and the lower bridge arm chip respectively through bonding wires.
[0015] In conjunction with the first aspect, optionally,
[0016] The first signal terminal and the second signal terminal have the same structure, each including an input terminal and an output terminal. The first end of the input terminal is used to input a signal, and the first end of the output terminal is used to output a signal. The second ends of both are mounted on a substrate and connected to the corresponding gate resistors via bonding wires.
[0017] In conjunction with the first aspect, optionally, the substrate is divided into multiple regions by etched grooves, each region being used to install the corresponding upper bridge arm chip, lower bridge arm chip, first gate resistor, second gate resistor, DC positive power terminal, DC negative power terminal, AC power terminal, first signal terminal and second signal terminal.
[0018] In conjunction with the first aspect, optionally, the DC positive power terminal and the DC negative power terminal are installed side by side and parallel to each other to form two parallel current paths with opposite current directions.
[0019] In conjunction with the first aspect, optionally, the high-voltage power module packaging structure further includes a housing, which is sealed and assembled with the substrate and wraps around the liner, upper bridge arm chip, lower bridge arm chip, first gate resistor, second gate resistor, DC positive power terminal, DC negative power terminal, AC power terminal, first signal terminal and second signal terminal.
[0020] The housing is provided with several holes, and the first end of each of the DC positive power terminal, DC negative power terminal, AC power terminal, first signal terminal and second signal terminal corresponds to a hole and is respectively inserted into the corresponding hole.
[0021] The housing is made of insulating material. Optionally, in conjunction with the first aspect, the housing is provided with a plurality of grooves distributed between the first ends of any two adjacent terminals among the DC positive power terminal, DC negative power terminal, AC power terminal, first signal terminal, and second signal terminal, and between the first end of each terminal and the substrate.
[0022] In conjunction with the first aspect, the high-voltage power module packaging structure may optionally include a substrate solder, wherein the substrate and the substrate are connected by the substrate solder.
[0023] In conjunction with the first aspect, optionally, the high-voltage power module packaging structure further includes a chip solder, and the chip module is connected to the substrate through the chip solder.
[0024] In conjunction with the first aspect, the bonding wire may optionally be either aluminum wire or copper wire.
[0025] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:
[0026] Two sets of upper bridge arm chips, a first gate resistor, a lower bridge arm chip, and a second gate resistor are symmetrically arranged about the center line of the substrate. After the electrical connection of each component on the substrate is completed by bonding wire, a first current path and a second current path are formed that are symmetrical and connected in parallel along the center line, so that the parasitic parameters of each current loop are balanced and the stability of the module operation is improved.
[0027] The DC positive power terminal and the DC negative power terminal are arranged side by side and parallel to each other, forming a third current path and a fourth current path that are parallel to each other and have opposite current directions. This allows the parasitic inductance of the high-voltage power module to be reduced by utilizing the mutual inductance cancellation principle, thereby reducing module losses and ultimately improving module reliability.
[0028] The various components in the module are connected by bonding wires to form a half-bridge topology circuit. The bonding wires are maximized at a certain spacing, which can increase the current carrying capacity while reducing the parasitic parameters of the bonding wires in the module circuit. The housing is designed with grooves to increase the creepage distance between the terminals and the substrate, which can prevent the high-voltage silicon carbide module from failing due to insufficient insulation. Attached Figure Description
[0029] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0030] Figure 1 This is a three-dimensional schematic diagram of the high-voltage power module packaging structure of the present invention;
[0031] Figure 2 This is a three-dimensional schematic diagram of the internal structure of the high-voltage power module packaging structure of the present invention;
[0032] Figure 3 This is a schematic diagram of the structural layout of the liner in the high-voltage power module packaging structure of the present invention;
[0033] Figure 4 This is a schematic diagram of the first and second current paths in the high-voltage power module packaging structure of the present invention;
[0034] Figure 5 This is a schematic diagram of the power terminal structure in the high-voltage power module packaging structure of the present invention;
[0035] Figure 6 This is a schematic diagram of the third and fourth current paths in the high-voltage power module packaging structure of the present invention;
[0036] Explanation of reference numerals in the attached figures:
[0037] 1-Substrate; 2-Backing solder; 3-Backing; 4-Chip solder; 5-Chip module; 51-Upper bridge arm chip; 52-Lower bridge arm chip; 61-First gate resistor; 62-Second gate resistor; 7-Bonding wire; 8-DC positive power terminal; 9-DC negative power terminal; 10-AC power terminal; 111-First signal terminal; 112-Second signal terminal; 12-Housing; 13-Groove; 14-High voltage power module; 15-Neutral line; 161-First current path; 162-Second current path; 171-Third current path; 172-Fourth current path. Detailed Implementation
[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use.
[0039] Example 1
[0040] like Figure 1-6 As shown, this embodiment provides a high-voltage power module packaging structure, characterized in that it includes:
[0041] The substrate 3 is mounted on the substrate 1. In the specific implementation process, the substrate 3 is set as a sandwich structure, with the upper and lower layers being copper layers and the middle layer being a ceramic layer. It uses aluminum nitride with high thermal conductivity to enable rapid heat transfer from the chip and reduce the overall thermal resistance and loss of the module.
[0042] Chip module 5, including upper bridge arm chip 51 and lower bridge arm chip 52, is mounted on the side of the substrate 3 away from the substrate 1.
[0043] The first current path 161 includes: the drain of the upper bridge arm chip 51 is connected to the DC positive power terminal 8; the gate of the upper bridge arm chip 51 is connected to the first end of the first gate resistor 61, and the second end of the first gate resistor 61 is connected to the first signal terminal 111; the source of the upper bridge arm chip 51 is connected to the drain of the lower bridge arm chip 52 and the AC power terminal 10; the gate of the lower bridge arm chip 52 is connected to the first end of the second gate resistor 62, and the second end of the second gate resistor 62 is connected to the second signal terminal 112; the source of the lower bridge arm chip 52 is connected to the DC negative power terminal 8. The high-power terminal 9 is connected; in the specific implementation process, the chip module 5 includes 2N upper bridge arm chips 51 and 2N lower bridge arm chips 52 installed in parallel on the substrate 3, where N is an integer greater than or equal to 1. The 2N upper bridge arm chips 51 are symmetrically installed about the center line 15, and the 2N lower bridge arm chips 52 are also symmetrically installed about the center line 15, realizing a highly symmetrical layout design. The two main current paths flowing through the chip, namely the first current path 161 and the second current path 162, are completely symmetrical, so that the parasitic parameters in the current loop of the parallel chip are consistent, realizing the current balance after the multi-chip parallel connection of the high-voltage silicon carbide module.
[0044] The second current path 162 has the same structure as the first current path 161. The two are symmetrically arranged about the center line 15 of the liner 3. The second current path 162 is connected in parallel with the first current path 161.
[0045] The above technical solution, in which two sets of upper bridge arm chips, the first gate resistor, the lower bridge arm chip and the second gate resistor are symmetrically arranged about the center line of the substrate, and after the electrical connection between the components on the substrate is completed by bonding wire, a first current path 161 and a second current path 162 that are symmetrical about the center line are obtained, which can improve the current balance of the module and improve the stability of the module operation.
[0046] In one specific embodiment of this example, the high-voltage power module packaging structure further includes: the first end of the DC positive power terminal 8 is used to connect to the positive terminal of an external DC high-voltage power supply, and the second end is mounted on the substrate 3 and connected to the upper bridge arm chip 51 through the bonding wire 7;
[0047] The first end of the DC negative power terminal 9 is used to connect to the negative terminal of an external DC high voltage power supply, and the second end is mounted on the substrate 3 and connected to the lower bridge arm chip 52 through the bonding wire 7.
[0048] The first end of the AC power terminal 10 is used to output AC power, and the second end is mounted on the substrate 3 and connected to the upper bridge arm chip 51 and the lower bridge arm chip 52 respectively through the bonding wire 7.
[0049] In one specific embodiment of this example, the first signal terminal 111 and the second signal terminal 112 have the same structure, each including an input terminal and an output terminal. The first end of the input terminal is used for inputting a signal, and the first end of the output terminal is used for outputting a signal. The second ends of both are mounted on the substrate 3 and connected to the corresponding gate resistors via bonding wires 7. In the specific implementation, the bonding wires 7 are set to either aluminum wires or copper wires. Based on the size of the active area of the chip, the number of bonding wires 7 is maximized at a certain spacing. This increases the current carrying capacity while reducing the parasitic parameters of the bonding wires 7 in the module circuit and completes the electrical connection of the half-bridge topology circuit.
[0050] In the above technical solution, the first signal terminal 111 and the second signal terminal 112 can be connected to the circuit outside the module to receive signals and transmit them to the module. They can also transmit the status of each chip in the module to facilitate the control of the module's operating status.
[0051] In one specific embodiment of this example, the substrate 3 is divided into multiple regions by etched grooves. Each region is used to install the corresponding upper bridge arm chip 51, lower bridge arm chip 52, first gate resistor 61, second gate resistor 62, DC positive power terminal 8, DC negative power terminal 9, AC power terminal 10, first signal terminal 111, and second signal terminal 112. In the specific implementation, the DC positive power terminal 8, DC negative power terminal 9, and AC power terminal 10 are respectively the DC+ power terminal, DC- power terminal, and AC power terminal.
[0052] The above technical solution uses etched grooves on the liner 3 to separate multiple areas, which isolates and installs the components, thus preventing faults such as leakage between the components.
[0053] In one specific embodiment of this example, the DC positive power terminal 8 and the DC negative power terminal 9 are installed side by side and parallel to each other to form two parallel current paths with opposite current directions. In the specific implementation, the DC+ power terminal (i.e., the DC positive power terminal 8) and the DC- power terminal (i.e., the DC negative power terminal 9) are placed side by side on the substrate at a certain distance, and the two power terminals are arranged parallel to each other. The area of the parallel arrangement is maximized according to the actual situation. When the DC+ power terminal and the DC- power terminal are working, the third current path 171 and the fourth current path 172 formed by the two are exactly opposite. Therefore, according to the principle of mutual inductance cancellation, the parasitic inductance parameter of the high-voltage silicon carbide module can be reduced.
[0054] In the above technical solution, the DC positive power terminal 8 and the DC negative power terminal 9 are installed side by side and parallel to each other. The mutual inductance cancellation structure formed by the back-to-back installation of the power terminals can reduce the parasitic parameters of the module and improve the reliability of the module.
[0055] In one specific embodiment of this example, the high-voltage power module packaging structure further includes a housing 12, which is sealed and assembled with the substrate 1 and wraps around the liner 3, the upper bridge arm chip 51, the lower bridge arm chip 52, the first gate resistor 61, the second gate resistor 62, the DC positive power terminal 8, the DC negative power terminal 9, the AC power terminal 10, the first signal terminal 111, and the second signal terminal 112.
[0056] The housing 12 is provided with a plurality of holes, and the first end of each of the DC positive power terminal 8, DC negative power terminal 9, AC power terminal 10, first signal terminal 111 and second signal terminal 112 corresponds to a hole and is respectively inserted into the corresponding hole;
[0057] The housing 12 is made of insulating material.
[0058] In one specific embodiment of this invention, the housing 12 is provided with a plurality of grooves 13, distributed between the first ends of any two adjacent terminals among the DC positive power terminal 8, DC negative power terminal 9, AC power terminal 10, first signal terminal 111, and second signal terminal 112, and between the first end of each terminal and the substrate 1. In practice, by providing the grooves 13, the housing 12 achieves a reasonable creepage distance between terminals and between terminals and the substrate 1, preventing the high-voltage silicon carbide module from failing due to insufficient insulation.
[0059] In one specific embodiment of this example, the high-voltage power module packaging structure further includes a substrate solder 2, and the substrate 3 is connected to the substrate 1 through the substrate solder 2.
[0060] In one specific embodiment of this example, the high-voltage power module packaging structure further includes a chip solder 4, and the chip module 5 is connected to the substrate 3 through the chip solder 4.
[0061] In one specific embodiment of this example, the bonding wire 7 is either an aluminum wire or a copper wire.
[0062] Example 2
[0063] This embodiment provides a high-voltage power module packaging method, including the high-voltage power module packaging structure described in Embodiment 1, and includes the following steps:
[0064] Two sets of upper bridge arm chips 51, first gate resistor 61, lower bridge arm chips 52, and second gate resistor 62, symmetrical about the center line 15 of the substrate 3, are installed on different areas of the substrate 3.
[0065] DC positive power terminal 8, DC negative power terminal 9 and AC power terminal 10 are installed on the corresponding areas of the liner 3, wherein DC positive power terminal 8 and DC negative power terminal 9 are installed side by side to form a third current path 171 and a fourth current path 172 that are parallel to each other and have opposite current directions.
[0066] The drain of the upper bridge arm chip 51 is connected to the DC positive power terminal 8 via bonding wire 7; the gate of the upper bridge arm chip 51 is connected to the first end of the first gate resistor 61, and the second end of the first gate resistor 61 is connected to the first signal terminal 111; the source of the upper bridge arm chip 51 is connected to the drain of the lower bridge arm chip 52 and the AC power terminal 10; the gate of the lower bridge arm chip 52 is connected to the first end of the second gate resistor 62, and the second end of the second gate resistor 62 is connected to the second signal terminal 112; the source of the lower bridge arm chip 52 is connected to the DC negative power terminal 9, forming a first current path 161;
[0067] A second current path 162 with the same structure as the first current path 161 is set up. The first current path 161 and the second current path 162 are connected in parallel and are symmetrical about the center line 15 of the substrate 3 to form a half-bridge topology circuit.
[0068] The liner 3 is welded onto the substrate 1;
[0069] The housing 12 is assembled onto the substrate 1 and silicone is injected into the housing 12 for filling.
[0070] The DC positive power terminal 8, the DC negative power terminal 9, and the AC power terminal 10 are bent and shaped respectively.
[0071] The high-voltage power module packaging is complete.
[0072] In the description of this invention, it should be understood that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.
[0073] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art will understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0074] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A high-voltage power module packaging structure, characterized in that, include: The liner (3) is mounted on the base plate (1); The chip module (5), including the upper bridge arm chip (51) and the lower bridge arm chip (52), is mounted on the side of the substrate (3) away from the substrate (1); The first current path (161) includes: the drain of the upper bridge arm chip (51) is connected to the DC positive power terminal (8); the gate of the upper bridge arm chip (51) is connected to the first end of the first gate resistor (61); the second end of the first gate resistor (61) is connected to the first signal terminal (111); the source of the upper bridge arm chip (51) is connected to the drain of the lower bridge arm chip (52) and the AC power terminal (10); the gate of the lower bridge arm chip (52) is connected to the first end of the second gate resistor (62); the second end of the second gate resistor (62) is connected to the second signal terminal (112); and the source of the lower bridge arm chip (52) is connected to the DC negative power terminal (9). The second current path (162) has the same structure as the first current path (161), and the two are symmetrically arranged about the center line (15) of the liner (3). The second current path (162) is connected in parallel with the first current path (161).
2. The high-voltage power module packaging structure according to claim 1, characterized in that, The first end of the DC positive power terminal (8) is used to connect to the positive terminal of an external DC high voltage power supply, and the second end is mounted on the substrate (3) and connected to the upper bridge arm chip (51) through the bonding wire (7). The first end of the DC negative power terminal (9) is used to connect to the negative terminal of an external DC high voltage power supply, and the second end is mounted on the substrate (3) and connected to the lower bridge arm chip (52) through the bonding wire (7). The first end of the AC power terminal (10) is used to output AC power, and the second end is mounted on the substrate (3) and connected to the upper bridge arm chip (51) and the lower bridge arm chip (52) respectively through bonding wires (7).
3. The high-voltage power module packaging structure according to claim 1, characterized in that, The first signal terminal (111) and the second signal terminal (112) have the same structure, each including an input terminal and an output terminal; The first end of the input terminal is used to input signals, and the first end of the output terminal is used to output signals. The second ends of both are mounted on the substrate (3) and connected to the corresponding gate resistors via bonding wires (7).
4. The high-voltage power module packaging structure according to claim 3, characterized in that, The substrate (3) is divided into multiple regions by etching grooves. Each region is used to install the corresponding upper bridge arm chip (51), lower bridge arm chip (52), first gate resistor (61), second gate resistor (62), DC positive power terminal (8), DC negative power terminal (9), AC power terminal (10), first signal terminal (111) and second signal terminal (112).
5. The high-voltage power module packaging structure according to claim 4, characterized in that, The DC positive power terminal (8) and the DC negative power terminal (9) are installed side by side and parallel to each other to form two parallel current paths with opposite current directions.
6. The high-voltage power module packaging structure according to claim 2, characterized in that, The high-voltage power module packaging structure also includes a housing (12), which is sealed and assembled with the substrate (1) and is wrapped around the liner (3), the upper bridge arm chip (51), the lower bridge arm chip (52), the first gate resistor (61), the second gate resistor (62), the DC positive power terminal (8), the DC negative power terminal (9), the AC power terminal (10), the first signal terminal (111), and the second signal terminal (112). The housing (12) is provided with several holes. The first end of each of the DC positive power terminal (8), DC negative power terminal (9), AC power terminal (10), first signal terminal (111) and second signal terminal (112) corresponds to a hole and is respectively inserted into the corresponding hole. The housing (12) is made of insulating material.
7. The high-voltage power module packaging structure according to claim 6, characterized in that, The housing (12) is provided with a plurality of grooves (13), which are distributed between the first ends of any two adjacent terminals among the DC positive power terminal (8), DC negative power terminal (9), AC power terminal (10), first signal terminal (111) and second signal terminal (112), as well as between the first end of each terminal and the substrate (1).
8. The high-voltage power module packaging structure according to claim 1, characterized in that, The high-voltage power module packaging structure also includes a liner solder (2), and the liner (3) is connected to the substrate (1) through the liner solder (2).
9. The high-voltage power module packaging structure according to claim 1, characterized in that, The high-voltage power module packaging structure also includes a chip solder (4), and the chip module (5) is connected to the substrate (3) through the chip solder (4).
10. The high-voltage power module packaging structure according to claim 2, characterized in that, The bonding wire (7) can be either aluminum wire or copper wire.