Wafer position correction equipment and correction method
By using a multi-beam detection mechanism and control system feedback adjustment, the problem of inaccurate wafer position observation was solved, achieving automated wafer position correction and uniform film thickness distribution, thus improving production efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-24
- Publication Date
- 2026-03-27
AI Technical Summary
In existing technologies, the wafer position is not accurately observed by the naked eye, resulting in abnormal film thickness distribution and affecting production efficiency.
A multi-beam detection mechanism is adopted, with the first and third beams defining the first limit position of the wafer edge, and the second and fourth beams defining the second limit position. The control system adjusts the movement of the transmission arm based on the beam reception to ensure that the wafer is in the correct position.
It enables automated detection and feedback adjustment of wafer position, improving the accuracy of position detection and production efficiency, and reducing the problem of abnormal film thickness distribution.
Smart Images
Figure CN121752016A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer position correction device and correction method. Background Technology
[0002] In semiconductor manufacturing, ensuring the precise positioning of the wafer on the heater is crucial when performing thin film deposition using chemical vapor deposition (CVD) equipment. During the transfer arm's movement of the wafer onto the heated surface, engineers visually confirm its position using four viewing windows within the chamber. This method has the following drawbacks:
[0003] 1. Poor lighting conditions will affect the accuracy of observing the wafer's position;
[0004] 2. Only three of the four observation windows can be used for observation. The third window cannot be used due to its location, which will also affect the accuracy of observing the wafer position.
[0005] 3. The ridges marked on the heater need to be observed. The gap between the ridges on the heater and the wafer needs to be observed. However, the gap is very small and it is easy to misread and cause errors.
[0006] 4. Since there is no standard measurement standard, each engineer's confirmation of wafer position based on their own experience will also have deviations.
[0007] Therefore, visually inspecting the wafer's position can lead to inaccuracies due to inconsistent observation standards and susceptibility to lighting and human error. This often results in abnormal film thickness distribution patterns after the equipment returns to the production line. When these abnormalities occur, the wafer position needs to be re-confirmed, increasing downtime and impacting production efficiency.
[0008] In view of this, it is necessary to propose a wafer position correction device and correction method to solve the above problems. Summary of the Invention
[0009] The purpose of this invention is to provide a wafer position correction device and correction method to improve the problem of inaccurate wafer position observed by the naked eye, which leads to abnormal film thickness distribution.
[0010] This invention provides a wafer position correction device, comprising:
[0011] A first emission assembly is disposed within the processing chamber and located above a circular wafer positioning area. The first emission assembly is used to emit a first beam and a second beam.
[0012] A first receiving component is disposed within the processing chamber and located below the wafer positioning area. The first receiving component is used to receive the first light beam and the second light beam.
[0013] The second emission assembly is disposed in the processing chamber and located above the wafer positioning area. The second emission assembly is used to emit the third beam and the fourth beam.
[0014] A second receiving component is disposed within the processing chamber and located below the wafer positioning area. The second receiving component is used to receive the third beam and the fourth beam.
[0015] The first beam, the second beam, the third beam, and the fourth beam are directed in the same direction but located at different positions. The same direction can be the front, back, left, or right side of the wafer positioning area. The first beam and the third beam are directed into the wafer positioning area and are used to define the first extreme position of the wafer edge. The second beam and the fourth beam are directed into the edge line of the wafer positioning area and are used to define the second extreme position of the wafer edge. When the wafer blocks the first beam and the third beam but does not block the second beam and the fourth beam, the wafer is in the correct position.
[0016] In one possible embodiment, the emission directions of the first beam, the second beam, the third beam, and the fourth beam are either inclined or vertical.
[0017] In one possible embodiment, if one of the emission directions of the first beam and the second beam is vertical and the other is inclined, the first beam and the second beam intersect at a first intersection point and form a first acute angle, and the first intersection point is located above the wafer positioning area.
[0018] In the case where one of the emission directions of the third beam and the fourth beam is vertical and the other is inclined, the third beam and the fourth beam intersect at a second intersection point and form a second acute angle, and the second intersection point is located above the wafer positioning area.
[0019] In one possible embodiment, the angle of the first acute angle is calculated using the following formula: tanα = M / H1, where α is the angle of the first acute angle, M is the allowable deviation of the wafer from the standard position, and H1 is the distance between the first intersection point and the upper surface of the wafer; and / or,
[0020] The formula for calculating the second acute angle is as follows: tanβ=M / H2, where β is the angle of the second acute angle, M is the allowable deviation of the wafer from the standard position, and H2 is the distance between the second intersection point and the upper surface of the wafer.
[0021] In one possible embodiment, where at least one of the emission directions of the first beam and the second beam is an oblique direction, the first transmitting component includes a first transmitter and a second transmitter spaced apart, and the first receiving component includes a first receiver and a second receiver spaced apart. The first transmitter is used to transmit the first beam to the first receiver, and the first receiver is used to receive the first beam. The second transmitter is used to transmit the second beam to the second receiver, and the second receiver is used to receive the second beam; and / or,
[0022] In cases where at least one of the emission directions of the third beam and the fourth beam is inclined, the second transmitting component includes a third transmitter and a fourth transmitter spaced apart, and the second receiving component includes a third receiver and a fourth receiver spaced apart. The third transmitter is used to transmit the third beam to the third receiver, and the third receiver is used to receive the third beam. The fourth transmitter is used to transmit the fourth beam to the fourth receiver, and the fourth receiver is used to receive the fourth beam.
[0023] In one possible embodiment, where both the emission direction of the first beam and the emission direction of the second beam are vertical, the first emitting component is a emitting device capable of emitting dual beams, and the first receiving component is a receiving device capable of receiving dual beams; and / or,
[0024] In the case where the emission direction of the third beam and the emission direction of the fourth beam are both vertical, the second emitting component is a emitting device capable of emitting dual beams, and the second receiving component is a receiving device capable of receiving dual beams.
[0025] In one possible embodiment, when both the emission direction of the first beam and the emission direction of the second beam are vertical or inclined, the first position point where the first beam strikes the wafer positioning area and the second position point where the second beam strikes the wafer positioning area are spaced apart along the radial direction of the wafer positioning area, and the distance between the first position point and the second position point is the allowable deviation of the wafer from the standard position; and / or,
[0026] In cases where the emission direction of the third beam and the emission direction of the fourth beam are both vertical or inclined, the third beam strikes the third position point on the wafer positioning area, and the fourth beam strikes the fourth position point on the wafer positioning area, which are distributed at intervals along the radial direction of the wafer positioning area. The distance between the third position point and the fourth position point is the allowable deviation of the wafer from the standard position.
[0027] In one possible embodiment, the allowable deviation is greater than 0 mm and less than or equal to 2 mm.
[0028] In one possible embodiment, the first receiving component and the second receiving component are communicatively connected to a control system, which is communicatively connected to a transmission arm.
[0029] The present invention also provides a wafer position correction method, which employs the wafer position correction device as described in any of the above embodiments, the correction method comprising the following steps:
[0030] As the transmission arm moves within the processing chamber, the first transmitting component transmits a first beam and a second beam to the first receiving component in real time, and the second transmitting component transmits a third beam and a fourth beam to the second receiving component in real time.
[0031] The control system adjusts the movement of the transmission arm based on the reception status of the first beam and the second beam by the first receiving component and the reception status of the third beam and the fourth beam by the second receiving component, until the wafer on the transmission arm blocks the first beam and the third beam but does not block the second beam and the fourth beam.
[0032] The beneficial effects of the wafer position correction device provided by this invention are as follows: It uses beams at different positions to detect the wafer position. The first and third beams are used to define the first extreme position of the wafer edge, and the second and fourth beams are used to define the second extreme position of the wafer edge. The control system adjusts the movement of the transmission arm based on the beam reception status of the first and second receiving components. When the wafer blocks the first and third beams but does not block the second and fourth beams, the wafer is in the correct position. This achieves an automated wafer position detection and feedback adjustment mechanism, improving the accuracy of wafer positioning and avoiding uneven film thickness caused by positioning deviations. In one embodiment, by using different transmitters to emit beams vertically and obliquely, interference between beams caused by beams being too close together can be reduced. By using a high-performance integrated dual-beam transmitter to simultaneously emit two vertical beams, the number of transmitters required is reduced, saving space. Attached Figure Description
[0033] Figure 1 This is a schematic diagram of the wafer position correction device of the present invention when the emission directions of the first beam and the third beam are vertical and the emission directions of the second beam and the fourth beam are inclined.
[0034] Figure 2 This is a schematic diagram of the wafer position correction device of the present invention when the emission directions of the first beam and the third beam are inclined and the emission directions of the second beam and the fourth beam are vertical.
[0035] Figure 3 This is a schematic diagram of the wafer position correction device of the present invention when the emission directions of the first beam, the second beam, the third beam and the fourth beam are all tilted.
[0036] Figure 4 This is a schematic diagram of the wafer position correction device of the present invention when the emission directions of the first beam, the second beam, the third beam and the fourth beam are all vertical.
[0037] Figure 5 The image shows a top view of the first transmitter, the second transmitter, and the first receiver of the wafer position correction device of the present invention when the emission direction of the first beam is vertical and the emission direction of the second beam is inclined.
[0038] Figure 6 This is a diagram showing the state of the wafer as it is shifted backward.
[0039] Figure 7 This is a schematic diagram of the wafer position correction device of the present invention when the wafer is shifted backward.
[0040] Figure 8 This is a state diagram of the wafer as it is shifted forward.
[0041] Figure 9 This is a schematic diagram of the wafer position correction device of the present invention detecting when the wafer is shifted forward.
[0042] Figure 10 This is a diagram showing the state of the wafer when it is shifted to the right.
[0043] Figure 11 This is a schematic diagram of the wafer position correction device of the present invention when the wafer is shifted to the right.
[0044] Explanation of reference numerals in the attached drawings: 110, first transmitting component; 111, first transmitter; 112, second transmitter; 113, first beam; 114, second beam; 115, first intersection point; 120, first receiving component; 121, first receiver; 122, second receiver; 130, second transmitting component; 131, third transmitter; 132, fourth transmitter; 133, third beam; 134, fourth beam; 140, second receiving component; 141, third receiver; 142, fourth receiver; 200, wafer; 300, heating plate. Detailed Implementation
[0045] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0046] The heating plate in the processing chamber is fixed, and the reaction gas flows down from the top through the spray head. The wafer is placed on the heating plate through the transfer arm. Because the diameter of the heating plate is larger than the diameter of the wafer but smaller than the diameter of the spray head, if the transfer arm deviates during the transfer process and fails to place the wafer in the correct position, it will cause serious edge deviation in the film thickness distribution pattern during the wafer coating process.
[0047] To address the problems existing in the prior art, embodiments of the present invention provide a wafer position correction device, see [link to previous document]. Figures 1 to 4The wafer positioning correction device includes a first transmitting component 110, a first receiving component 120, a second transmitting component 130, and a second receiving component 140. The first transmitting component 110 is disposed within a processing chamber and above a circular wafer positioning area, and is used to emit a first beam 113 and a second beam 114. The first receiving component 120 is disposed within the processing chamber and below the wafer positioning area, and is used to receive the first beam 113 and the second beam 114. The second transmitting component 130 is disposed within the processing chamber and above the wafer positioning area, and is used to emit a third beam 133 and a fourth beam 134. The second receiving component 140 is disposed within the processing chamber and below the wafer positioning area, and is used to receive the third beam 133 and the fourth beam 134. The first beam 113, the second beam 114, the third beam 133, and the fourth beam 134 are directed in the same direction but located at different positions. The same direction can be the front, back, left, or right side of the wafer positioning area. The first beam 113 and the third beam 133 are directed into the wafer positioning area and are used to define the first extreme position of the edge of the wafer 200. The second beam 114 and the fourth beam 134 are directed into the edge line of the wafer positioning area and are used to define the second extreme position of the edge of the wafer 200. When the wafer 200 blocks the first beam 113 and the third beam 133 but does not block the second beam 114 and the fourth beam 134, the wafer 200 is in the correct position.
[0048] In this embodiment, a first beam 113 and a second beam 114 are emitted by a first emitting component 110, and a third beam 133 and a fourth beam 134 are emitted by a second emitting component 130. The first beam 113 and the third beam 133 are directed to a first extreme position at the edge of the wafer 200. The first extreme position can be understood as the edge line of the standard position of the wafer 200. When the wafer 200 is in the correct position, it must simultaneously block the first beam 113 and the third beam 133. The second beam 114 and the fourth beam 134 are directed to a second extreme position at the edge of the wafer 200. The maximum allowable deviation of the wafer 200 from the standard position can be obtained according to the minimum error of the film thickness distribution pattern allowed by the process, i.e., the wafer positioning area (e.g., the wafer positioning area on the heating plate 300). The second extreme position is directed to the edge line of the wafer positioning area. When the wafer 200 is in the correct position, it cannot block the second beam 114 and the fourth beam 134, i.e., the wafer 200 cannot exceed the maximum allowable deviation position.
[0049] By defining the positional relationship between the first beam 113, the second beam 114, the third beam 133, and the fourth beam 134, a reasonable placement range for the wafer 200 (i.e., the wafer positioning area) is determined. Based on the wafer 200's obstruction of each beam, the current position of the wafer 200 can be detected and determined in real time. Then, the transmission arm is adjusted according to the current position of the wafer 200 to move the wafer 200 to the correct position. This avoids many influencing factors of manual observation, improves the accuracy of wafer 200 position detection, and avoids the problem of abnormal film thickness distribution caused by inaccurate wafer 200 position.
[0050] The standard position of wafer 200 is the ideal standard position. Under the premise of meeting process requirements, the allowable deviation area of wafer 200 is calculated. With the standard position of wafer 200 as the only precise location, the transfer arm needs to control its movement very precisely to ensure that wafer 200 is accurately placed in the standard position. This usually requires multiple adjustments to ensure no deviation. However, this invention introduces the technical feature of a wafer positioning area, allowing the transfer arm to place wafer 200 anywhere within this area. This significantly reduces the number of adjustments and improves the accuracy of wafer 200 position correction.
[0051] In some possible embodiments, see Figures 1 to 4 The emission directions of the first beam 113, the second beam 114, the third beam 133, and the fourth beam 134 are either inclined or vertical. Different combinations of the emission directions of the beams can constitute various technical solutions. For example, the structures of the first transmitting component 110 and the first receiving component 120 can be the same as or different from the structures of the second transmitting component 130 and the second receiving component 140. A detailed explanation follows with specific embodiments.
[0052] In the first embodiment, see Figure 1 and Figure 2 Regarding the case where one of the emission directions of the first beam 113 and the second beam 114 is vertical and the other is inclined, one solution is as follows: See Figure 1 The first beam 113 is emitted vertically, and the second beam 114 is emitted at an angle; another option is: see Figure 2The first beam 113 is emitted in an oblique direction, and the second beam 114 is emitted in a vertical direction. The first beam 113 and the second beam 114 intersect at a first intersection point 115, forming a first acute angle. The first intersection point 115 is located above the wafer positioning area. The first emitting component 110 emits a vertical beam and an oblique beam, which converge and then strike the second emitting component 130. Different beam directions are used to detect different extreme positions. For the case where one of the emission directions of the third beam 133 and the fourth beam 134 is vertical and the other is oblique, one possible solution is: [See...] Figure 1 The third beam 133 is emitted vertically, and the fourth beam 134 is emitted at an angle; another option is: see Figure 2 The third beam 133 is emitted in an oblique direction, and the fourth beam 134 is emitted in a vertical direction. The third beam 133 and the fourth beam 134 intersect at a second intersection point and form a second acute angle. The second intersection point is located above the wafer positioning area. The third emission component emits a vertical beam and an oblique beam. The vertical beam and the oblique beam converge and then are emitted to the fourth emission component. Different beams in different directions are used to detect different extreme positions.
[0053] In one specific embodiment, see Figure 1 and Figure 2 The formula for calculating the first acute angle is as follows: tanα=M / H1, where α is the angle of the first acute angle, M is the allowable deviation of wafer 200 from the standard position, and H1 is the distance between the first intersection point 115 and the upper surface of wafer 200.
[0054] Further, see Figure 1 and Figure 2 The formula for calculating H1 is as follows: H1 = L1 / 2 - D1, where L1 is the distance between the transmitting end and the receiving end of the vertical beam in the first beam 113 and the second beam 114, and D1 is the distance between the transmitting end of the vertical beam in the first beam 113 and the second beam 114 and the first intersection point 115.
[0055] Based on the specific installation environment within the processing chamber, by reasonably setting the distance between the transmitting and receiving ends of the vertical beams in the first beam 113 and the second beam 114, as well as the position of the first intersection point 115, the tilt angle of the tilted beams in the first beam 113 and the second beam 114 can be adjusted. This allows for the rational planning and design of the optical path of the first beam 113 and the second beam 114, ensuring the accuracy of wafer 200 position detection.
[0056] In another specific embodiment, see Figure 1 and Figure 2The formula for calculating the second acute angle is as follows: tanβ=M / H2, where β is the angle of the second acute angle, M is the allowable deviation of wafer 200 from the standard position, and H2 is the distance between the second intersection point and the upper surface of wafer 200.
[0057] Further, see Figure 1 and Figure 2 The formula for calculating H1 is as follows: H2 = L2 / 2 - D2, where L2 is the distance between the transmitting and receiving ends of the vertical beams in the third beam 133 and the fourth beam 134, and D2 is the distance between the transmitting end of the vertical beams in the third beam 133 and the fourth beam 134 and the first intersection point 115.
[0058] Based on the specific installation environment within the processing chamber, by reasonably setting the distance between the transmitting and receiving ends of the vertical beams in the third beam 133 and the fourth beam 134, as well as the position of the second intersection point, the tilt angle of the tilted beams in the third beam 133 and the fourth beam 134 can be adjusted. This allows for the rational planning and design of the optical path of the third beam 133 and the fourth beam 134, ensuring the accuracy of wafer 200 position detection.
[0059] In one embodiment, for cases where at least one of the emission directions of the first beam 113 and the second beam 114 is an inclined direction, one solution is: See Figure 1 The first beam 113 is emitted vertically, and the second beam 114 is emitted at an angle; another option is: see Figure 2 The first beam 113 is emitted in an inclined direction, and the second beam 114 is emitted in a vertical direction; another option is: see... Figure 3 The first beam 113 is emitted in an oblique direction, and the second beam 114 is also emitted in an oblique direction. See [link / reference] Figures 1 to 3 The first transmitting component 110 includes a first transmitter 111 and a second transmitter 112 arranged at intervals. The first receiving component 120 includes a first receiver 121 and a second receiver 122 arranged at intervals. The first receiver 121 is arranged corresponding to the first transmitting end, and the second receiver 122 is arranged corresponding to the second transmitting end. The first transmitter 111 is used to transmit a first beam 113 to the first receiver 121, and the first receiver 121 is used to receive the first beam 113. The second transmitter 112 is used to transmit a second beam 114 to the second receiver 122, and the second receiver 122 is used to receive the second beam 114.
[0060] In another embodiment, for cases where at least one of the emission directions of the third beam 133 and the fourth beam 134 is an inclined direction, one solution is: see [link to relevant documentation] Figure 1The third beam 133 is emitted vertically, and the fourth beam 134 is emitted at an angle; another option is: see Figure 2 The third beam 133 is emitted in an inclined direction, and the fourth beam 134 is emitted in a vertical direction; another scheme is as follows: see Figure 3 The third beam 133 is emitted in an oblique direction, and the fourth beam 134 is also emitted in an oblique direction. See [link / reference] Figures 1 to 3 The second transmitting component 130 includes a third transmitter 131 and a fourth transmitter 132 spaced apart, and the second receiving component 140 includes a third receiver 141 and a fourth receiver 142 spaced apart. The third receiver 141 is configured to correspond to the third transmitting end, and the fourth receiver 142 is configured to correspond to the fourth transmitting end. The third transmitter 131 is used to transmit a third beam 133 to the third receiver 141, and the third receiver 141 is used to receive the third beam 133. The fourth transmitter 132 is used to transmit a fourth beam 134 to the fourth receiver 142, and the fourth receiver 142 is used to receive the fourth beam 134.
[0061] When multiple beams are emitted from the same transmitter and are too close to each other, they may interfere with each other. This interference may manifest as beam scattering, diffraction, or cross-coupling, thus affecting the beam transmission quality and detection accuracy. The first transmitting assembly 110 uses two transmitters spaced apart, and the first receiving assembly 120 uses two independent receivers; the second transmitting assembly 130 uses two transmitters spaced apart, and the second receiving assembly 140 uses two independent receivers. Each transmitter is responsible for emitting only one beam, and each receiver only receives the beam emitted by its corresponding transmitter. The spaced arrangement ensures sufficient distance between beams, significantly reducing mutual interference. Furthermore, since each transmitter and receiver is an independent module, when a transmitter or receiver needs to be replaced, only that transmitter or receiver needs to be replaced, without replacing the entire transmitting or receiving assembly, reducing maintenance complexity and cost.
[0062] In the second embodiment, see Figure 4 In the case where the emission directions of the first beam 113 and the second beam 114 are both vertical, the first transmitting component 110 is a transmitting device capable of emitting dual beams, and the first receiving component 120 is a receiving device capable of receiving dual beams; and / or, in the case where the emission directions of the third beam 133 and the fourth beam 134 are both vertical, the second transmitting component 130 is a transmitting device capable of emitting dual beams, and the second receiving component 140 is a receiving device capable of receiving dual beams.
[0063] In this embodiment, employing a transmitter capable of emitting dual beams and a receiver capable of receiving dual beams significantly reduces the number of transmitters and receivers in the system. Compared to configuring a separate transmitter and receiver for each beam, this design greatly simplifies the device structure and reduces the complexity of connections and wiring between components. Installing multiple separate transmitters and receivers within a limited space can consume significant space and increase the difficulty of device layout. However, using a device capable of emitting and receiving dual beams allows for the transmission and reception of two beams without increasing space requirements, thus improving space utilization.
[0064] In the third embodiment, see Figure 3 and Figure 4 For cases where the emission directions of the first beam 113 and the second beam 114 are both vertical or inclined, the first position point of the first beam 113 on the wafer positioning area and the second position point of the second beam 114 on the wafer positioning area are spaced apart along the radial direction of the wafer positioning area, and the distance between the first position point and the second position point is the allowable deviation of the wafer 200 from the standard position; and / or, for cases where the emission directions of the third beam 133 and the fourth beam 134 are both vertical or inclined, the third position point of the third beam 133 on the wafer positioning area and the fourth position point of the fourth beam 134 on the wafer positioning area are spaced apart along the radial direction of the wafer positioning area, and the distance between the third position point and the fourth position point is the allowable deviation of the wafer 200 from the standard position.
[0065] In this embodiment, the first and second position points are distributed at intervals along the radial direction of the wafer positioning area, and the distance between them is the allowable deviation of the wafer 200 from the standard position. The third and fourth position points are also distributed at intervals along the radial direction of the wafer positioning area, and the distance between them is the allowable deviation of the wafer 200 from the standard position. The first and third position points are located on the edge line of the standard position of the wafer 200 to define the minimum limit position, and the second and fourth position points are located on the edge line of the wafer positioning area to define the maximum limit position. Under the premise of meeting the process requirements, the wafer 200 has a certain position adjustment space, which makes it easier to adjust the wafer 200 to the correct position (i.e., within the wafer positioning area) when moving and adjusting the transmission arm, thereby improving the efficiency of wafer 200 position correction.
[0066] In one embodiment, the allowable deviation is greater than 0 mm and less than or equal to 2 mm. Setting a reasonable allowable deviation range can provide a certain position adjustment space for the movement and adjustment of the transfer arm while ensuring that the process production accuracy is met. The transfer arm only needs to move the wafer 200 to any position within the wafer positioning area, which greatly reduces the number of adjustments and time, and improves production efficiency.
[0067] In one embodiment, the first receiving component 120 and the second receiving component 140 are communicatively connected to the control system, and the control system is communicatively connected to the transmission arm. The first receiving component 120 sends signals of the first beam 113 and the second beam 114 to the control system, and the second receiving component 140 sends signals of the third beam 133 and the fourth beam 134 to the control system. The control system determines the current position of the wafer 200 based on the signals sent by the first receiving component 120 and the second receiving component 140. If the wafer 200 is not in the correct position, the control system adjusts the transmission arm according to the offset of the wafer 200 until the wafer 200 reaches the correct position.
[0068] In some specific embodiments, the first beam 113 and the second beam 114 are visible light beams, infrared beams or lasers, and the third beam 133 and the fourth beam 134 are visible light beams, infrared beams or lasers.
[0069] The following example illustrates the position detection and feedback movement adjustment of wafer 200 by using the example of the first beam 113, the second beam 114, the third beam 133, and the fourth beam 134 all being directed to the front of the wafer positioning area.
[0070] Combination Figures 6 to 11 The directions of front, rear, left, and right are determined based on the direction in which the transmission arm enters the processing chamber. Point A is the location of the first transmitting component 110, and point B is the location of the second transmitting component 130. A received beam signal (i.e., the beam is not obstructed by wafer 200) is recorded as 0, and no received beam signal (i.e., the beam is obstructed by wafer 200) is recorded as 1. X1X2Y1Y2 represent the signal reception status of the four beams at the current moment, where X1 corresponds to the signal reception status of the first beam 113, X2 corresponds to the signal reception status of the second beam 114, Y1 corresponds to the signal reception status of the third beam 133, and Y2 corresponds to the signal reception status of the fourth beam 134.
[0071] See Figure 6 and Figure 7 When X1X2Y1Y2 is 0000, the position of wafer 200 is shifted backward relative to the wafer positioning area. Then the transmission arm controls the transmission arm to move forward with wafer 200. Here, 0000 means that wafer 200 does not block the first beam 113, the second beam 114, the third beam 133 and the fourth beam 134.
[0072] See Figure 8 and Figure 9When X1X2Y1Y2 is 1111, the position of wafer 200 is shifted forward relative to the wafer positioning area. Then the transmission arm controls the transmission arm to move backward with wafer 200. Here, 1111 means that wafer 200 simultaneously blocks the first beam 113, the second beam 114, the third beam 133 and the fourth beam 134.
[0073] When X1X2Y1Y2 is any one of 0010, 0011, or 1011, the position of wafer 200 is offset to the left relative to the wafer positioning area. Then, the transmission arm controls the transmission arm to move to the right along with wafer 200. Here, 0010 means that wafer 200 blocks the third beam 133 but does not block the first beam 113, the second beam 114, and the fourth beam 134; 0011 means that wafer 200 blocks the third beam 133 and the fourth beam 134 but does not block the first beam 113 and the second beam 114; 1011 means that wafer 200 blocks the first beam 113, the third beam 133, and the fourth beam 134 but does not block the second beam 114.
[0074] See Figure 10 When X1X2Y1Y2 is any one of 1000, 1100, or 1110, the position of wafer 200 is offset to the right relative to the wafer positioning area. The transmission arm then controls the transmission arm to move wafer 200 to the left. Here, 1000 represents wafer 200 blocking the first beam 113 but not blocking the second beam 114, the third beam 133, or the fourth beam 134; 1100 represents wafer 200 blocking the first beam 113 and the second beam 114 but not blocking the third beam 133 or the fourth beam 134. Figure 11 As shown; 1110 represents wafer 200 blocking the first beam 113, the second beam 114 and the third beam 133 but not blocking the fourth beam 134.
[0075] When X1X2Y1Y2 is 1010, wafer 200 is in the correct position, and there is no need to move wafer 200 further, thus completing the position correction of wafer 200. Here, 1010 represents that wafer 200 blocks the first beam 113 and the third beam 133 but does not block the second beam 114 and the fourth beam 134, as shown below. Figures 1 to 4 As shown.
[0076] If X1X2Y1Y2 has other conditions, it indicates that the wafer position correction equipment is faulty and needs to be repaired.
[0077] It should be noted that the principle of the first beam 113, the second beam 114, the third beam 133, and the fourth beam 134 all pointing to the rear, left, or right side of the wafer positioning area for wafer 200 position detection and feedback movement adjustment is the same as the principle of the first beam 113, the second beam 114, the third beam 133, and the fourth beam 134 all pointing to the front side of the wafer positioning area for wafer 200 position detection and feedback movement adjustment, and will not be repeated here.
[0078] The present invention also provides a wafer position correction method, which employs the wafer position correction device as described in any of the above embodiments, and the correction method includes the following steps:
[0079] During the movement of the transmission arm within the processing chamber, the first transmitting component 110 transmits a first beam 113 and a second beam 114 to the first receiving component 120 in real time, and the second transmitting component 130 transmits a third beam 133 and a fourth beam 134 to the second receiving component 140 in real time.
[0080] The control system controls and adjusts the movement of the transmission arm based on the reception status of the first receiving component 120 on the first beam 113 and the second beam 114, and the reception status of the second receiving component 140 on the third beam 133 and the fourth beam 134, until the wafer 200 on the transmission arm blocks the first beam 113 and the third beam 133 but does not block the second beam 114 and the fourth beam 134.
[0081] The technical effects of the wafer position correction device and correction method of the present invention will be explained in detail.
[0082] 1. By using a precise beam emission and reception mechanism, the wafer position correction equipment can automatically and accurately detect the position of wafer 200. Compared with manual observation, it is not affected by changes in light, human fatigue, or subjective judgment differences, greatly improving the accuracy and reliability of wafer 200 position detection.
[0083] 2. Through standardized beam emission and reception, and wafer 200 position determination mechanism, the consistency and accuracy of position correction standards for different wafer 200s can be ensured during the mass production of wafer 200s, which helps to improve product quality.
[0084] 3. The control system adjusts the movement of the transmission arm based on the beam reception status of the first receiving component 120 and the second receiving component 140. This real-time feedback and adjustment mechanism ensures that the wafer 200 can be moved to the correct position quickly and accurately. Furthermore, the automated calibration process eliminates human interference in the wafer 200 position calibration, reducing problems caused by human error. This not only improves production stability and reliability but also reduces reliance on operator skills and experience.
[0085] 4. Precise calibration of the wafer 200 position reduces anomalies in film thickness distribution caused by inaccurate wafer 200 positioning. This means that after equipment reflow, the film thickness distribution is more uniform and consistent, improving product quality.
[0086] 5. By improving the accuracy of wafer 200 position correction, the need to re-confirm wafer 200 position due to abnormal film thickness distribution patterns can be reduced, significantly decreasing equipment downtime. This not only improves equipment utilization but also shortens the production cycle, thereby increasing overall production efficiency.
[0087] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways. Unless otherwise defined, the technical or scientific terms used herein should be understood in their ordinary sense by one of ordinary skill in the art to which this invention pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word encompasses the element or object listed following the word and its equivalents, but do not exclude other elements or objects.
Claims
1. A wafer position correction device, characterized in that, include: A first emission assembly is disposed within the processing chamber and located above a circular wafer positioning area. The first emission assembly is used to emit a first beam and a second beam. A first receiving component is disposed within the processing chamber and located below the wafer positioning area. The first receiving component is used to receive the first light beam and the second light beam. The second emission assembly is disposed in the processing chamber and located above the wafer positioning area. The second emission assembly is used to emit the third beam and the fourth beam. A second receiving component is disposed within the processing chamber and located below the wafer positioning area. The second receiving component is used to receive the third beam and the fourth beam. The first beam, the second beam, the third beam, and the fourth beam are directed in the same direction but located at different positions. The same direction can be the front, back, left, or right side of the wafer positioning area. The first beam and the third beam are directed into the wafer positioning area and are used to define the first extreme position of the wafer edge. The second beam and the fourth beam are directed into the edge line of the wafer positioning area and are used to define the second extreme position of the wafer edge. When the wafer blocks the first beam and the third beam but does not block the second beam and the fourth beam, the wafer is in the correct position.
2. The wafer position correction device according to claim 1, characterized in that, The emission directions of the first beam, the second beam, the third beam, and the fourth beam are either inclined or vertical.
3. The wafer position correction device according to claim 2, characterized in that, In the case where one of the emission directions of the first beam and the second beam is vertical and the other is inclined, the first beam and the second beam intersect at a first intersection point and form a first acute angle, and the first intersection point is located above the wafer positioning area; In the case where one of the emission directions of the third beam and the fourth beam is vertical and the other is inclined, the third beam and the fourth beam intersect at a second intersection point and form a second acute angle, and the second intersection point is located above the wafer positioning area.
4. The wafer position correction device according to claim 3, characterized in that, The formula for calculating the first acute angle is as follows: tanα=M / H1, where α is the angle of the first acute angle, M is the allowable deviation of the wafer from the standard position, and H1 is the distance between the first intersection point and the upper surface of the wafer; and / or, The formula for calculating the second acute angle is as follows: tanβ=M / H2, where β is the angle of the second acute angle, M is the allowable deviation of the wafer from the standard position, and H2 is the distance between the second intersection point and the upper surface of the wafer.
5. The wafer position correction device according to claim 2, characterized in that, In cases where at least one of the emission directions of the first beam and the second beam is inclined, the first transmitting component includes a first transmitter and a second transmitter spaced apart, and the first receiving component includes a first receiver and a second receiver spaced apart. The first transmitter is used to emit the first beam to the first receiver, and the first receiver is used to receive the first beam. The second transmitter is used to emit the second beam to the second receiver, and the second receiver is used to receive the second beam; and / or, In cases where at least one of the emission directions of the third beam and the fourth beam is inclined, the second transmitting component includes a third transmitter and a fourth transmitter spaced apart, and the second receiving component includes a third receiver and a fourth receiver spaced apart. The third transmitter is used to transmit the third beam to the third receiver, and the third receiver is used to receive the third beam. The fourth transmitter is used to transmit the fourth beam to the fourth receiver, and the fourth receiver is used to receive the fourth beam.
6. The wafer position correction device according to claim 2, characterized in that, In the case where both the emission direction of the first beam and the emission direction of the second beam are vertical, the first emitting component is a emitting device capable of emitting dual beams, and the first receiving component is a receiving device capable of receiving dual beams; and / or, In the case where the emission direction of the third beam and the emission direction of the fourth beam are both vertical, the second emitting component is a emitting device capable of emitting dual beams, and the second receiving component is a receiving device capable of receiving dual beams.
7. The wafer position correction device according to claim 2, characterized in that, In cases where both the emission direction of the first beam and the emission direction of the second beam are vertical or inclined, the first position point where the first beam strikes the wafer positioning area and the second position point where the second beam strikes the wafer positioning area are spaced apart along the radial direction of the wafer positioning area. The distance between the first and second position points is the allowable deviation of the wafer from the standard position; and / or, In cases where the emission direction of the third beam and the emission direction of the fourth beam are both vertical or inclined, the third beam strikes the third position point on the wafer positioning area, and the fourth beam strikes the fourth position point on the wafer positioning area, which are distributed at intervals along the radial direction of the wafer positioning area. The distance between the third position point and the fourth position point is the allowable deviation of the wafer from the standard position.
8. The wafer position correction device according to claim 4 or 7, characterized in that, The allowable deviation is greater than 0 mm and less than or equal to 2 mm.
9. The wafer position correction device according to any one of claims 1-7, characterized in that, The first receiving component and the second receiving component are communicatively connected to the control system, and the control system is communicatively connected to the transmission arm.
10. A wafer position correction method, characterized in that, The wafer position correction device as described in any one of claims 1-9, the correction method includes the following steps: As the transmission arm moves within the processing chamber, the first transmitting component transmits a first beam and a second beam to the first receiving component in real time, and the second transmitting component transmits a third beam and a fourth beam to the second receiving component in real time. Based on the reception status of the first receiving component for the first beam and the second beam, and the reception status of the second receiving component for the third beam and the fourth beam, the movement of the transmission arm is controlled and adjusted until the wafer on the transmission arm blocks the first beam and the third beam but does not block the second beam and the fourth beam.