Ceramic manifold micro-channel heat dissipation device for IGBT (Insulated Gate Bipolar Translator) module

Abstract

The invention provides a ceramic manifold micro-channel heat dissipation device for an IGBT module, and the heat dissipation device comprises a ceramic substrate which is provided with a heat dissipation channel and is used for bearing the IGBT module and diffusing a cooling medium through the heat dissipation channel, and a cover plate which is in sealed connection with the ceramic substrate and forms a sealed space. The cover plate is provided with an inlet manifold structure used for allowing a cooling medium to flow into the sealed space and allowing the cooling medium to be diffused on the plane of the cover plate, an outlet manifold structure used for allowing the cooling medium to flow out of the sealed space, and a spoiler provided with a flow dividing channel and a backflow channel. The shunting channel is used for guiding a cooling medium diffused on the plane of the cover plate to flow into the heat dissipation channel, and the backflow channel is used for guiding the cooling medium diffused in the heat dissipation channel to flow back to the outlet manifold structure; according to the structural design, the flowing path of the cooling medium is shortened, the flowing resistance of the cooling medium is reduced, the flowing speed of the cooling medium is increased, and therefore the heat exchange efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of heat dissipation technology for microelectronic devices, and in particular to a ceramic manifold microchannel heat dissipation device for IGBT modules. Background Technology

[0002] Microelectronic devices, such as IGBT (Insulated Gate Bipolar Transistor Module), are widely used in advanced engineering fields such as aerospace electronic control equipment, high-performance computers, and power electronic devices. As a core component of the electric drive system of new energy vehicles, the IGBT module, with its unique "MOS gate control + bipolar conduction" hybrid architecture, enhances the high voltage resistance, high current conduction capability, low loss operation, and high-frequency fast switching capability of the main inverter.

[0003] With the automotive industry's increasing demands for energy efficiency and extended driving range, and driven by the trends of miniaturization and functional integration in electronic chips / systems, the power density of IGBT modules is constantly improving. During IGBT module operation, a large amount of Joule heat is continuously generated during high-frequency switching. Coupled with significant differences in the thermophysical parameters of various internal materials, IGBT modules face prominent thermal stress problems caused by high temperatures and significant temperature gradients, leading to a substantial increase in the risk of power device failure.

[0004] In related technologies, heat exchangers for microelectronic devices mostly use metal materials and rely on the thermal conductivity of metals for heat dissipation. Their thermal performance is limited in high-temperature environments, resulting in unsatisfactory heat dissipation. In addition, some heat exchangers for microelectronic devices use corrosive cooling media, which increases the performance requirements of metal materials, raises the production cost of metal materials, and consequently increases the manufacturing cost of heat exchangers for microelectronic devices.

[0005] Therefore, improvements are needed to the heat exchangers of microelectronic devices in related technologies. Summary of the Invention

[0006] In view of the shortcomings of the prior art described above, this application provides a ceramic manifold microchannel heat dissipation device for IGBT modules to solve the above-mentioned technical problems.

[0007] According to one aspect of the embodiments of this application, a ceramic manifold microchannel heat dissipation device for an IGBT module is provided. The heat dissipation device includes: a ceramic substrate with heat dissipation channels for supporting the IGBT module and for diffusing cooling medium through the heat dissipation channels to exchange heat conducted by the IGBT module; a cover plate that is sealed to the ceramic substrate to form a sealed space, the cover plate having an inlet manifold structure for allowing the cooling medium to flow into the sealed space and diffuse on the plane of the cover plate, and an outlet manifold structure for allowing the cooling medium to flow out of the sealed space; and a baffle plate placed within the sealed space, the baffle plate having a diversion channel and a return channel, the diversion channel being connected to the inlet manifold structure and the heat dissipation channels, the diversion channel being used to guide the cooling medium diffused on the plane of the cover plate into the heat dissipation channels; and the return channel being connected to the outlet manifold structure and the heat dissipation channels, the return channel being used to guide the cooling medium diffused in the heat dissipation channels back to the outlet manifold structure.

[0008] In one embodiment of this application, the inlet manifold structure includes: a manifold channel disposed on the lower surface of the cover plate and communicating with the diversion channel, for allowing the cooling medium to flow into the diversion channel; An inlet channel is located on one side of the cover plate and communicates with the manifold channel for allowing the cooling medium to flow into the manifold channel; a cooling medium inlet is located on one side edge of the cover plate and communicates with the inlet channel for allowing the cooling medium to flow into the inlet channel.

[0009] In one embodiment of this application, the manifold channel is a tapered channel, and the width of the end of the tapered channel that communicates with the inlet channel is smaller than the width of the end of the tapered channel that is away from the inlet channel.

[0010] In one embodiment of this application, the outlet manifold structure includes: a bypass channel disposed on the lower surface of the cover plate and communicating with the return channel for containing the returned cooling medium; an outlet channel disposed on the other side of the cover plate and communicating with the bypass channel for collecting the returned cooling medium; and a cooling medium outlet disposed on the other edge of the cover plate and communicating with the outlet channel for allowing the returned cooling medium to flow out of the outlet channel.

[0011] In one embodiment of this application, the manifold channel and the bypass channel are grouped together, the shunt channel and the return channel are grouped together, and the heat dissipation channel is partitioned. The partitioned heat dissipation channel has a one-to-one correspondence with the grouped shunt and return channels, and the grouped shunt and return channels have a one-to-one correspondence with the grouped manifold channel and bypass channel. The partitioned heat dissipation channel corresponds to the position of the electronic components in the IGBT module.

[0012] In one embodiment of this application, the diversion channel is disposed opposite to the manifold channel, and the return channel is disposed opposite to the bypass channel.

[0013] In one embodiment of this application, the flow distribution channel includes: a plurality of sub-channels; different sub-channels correspond to different location regions of the manifold channel; the heat dissipation channel includes: a plurality of sub-channels, different sub-channels correspond to different sub-channels in the heat dissipation channel.

[0014] In one embodiment of this application, the width-to-height ratio of each sub-channel ranges from 0.36 to 1.14.

[0015] In one embodiment of this application, the width of the end of the tapered channel that communicates with the inlet channel ranges from 4 to 6.5 mm, the width of the end of the tapered channel that is away from the inlet channel ranges from 7 to 10 mm, and the height of the tapered channel ranges from 1.25 to 5 mm.

[0016] In one embodiment of this application, the ceramic substrate is fixedly connected to the IGBT module, the ceramic substrate is sealed to the baffle, and the baffle is sealed to the cover plate.

[0017] The beneficial effects of this application are as follows: This application includes a ceramic substrate, a cover plate, and a baffle plate. A heat dissipation channel is provided on the ceramic substrate, an inlet manifold structure and an outlet manifold structure are provided on the cover plate, and a diversion channel and a return channel are provided on the baffle plate. The cooling medium flows into the sealed space through the inlet manifold structure and diffuses on the plane of the cover plate. While the cooling medium diffuses, the diversion channel guides the cooling medium into the heat dissipation channel. After diffusing in the heat dissipation channel, the cooling medium flows into the return channel and flows out of the sealed space through the outlet manifold structure. The above structural configuration enables the cooling medium to form a return flow in the sealed space, shortening the flow path of the cooling medium, reducing the resistance during the flow of the cooling medium, and increasing the flow rate of the cooling medium. Moreover, when the diffusion rate of the cooling medium in the heat dissipation channel increases, the rate of heat exchange with the heat conducted from the IGBT module to the ceramic substrate also increases accordingly, thereby improving the cooling effect on the IGBT module. It has low dependence on the thermal conductivity of the metal material and the characteristics of the cooling medium, and has the effect of saving the manufacturing cost of the heat dissipation device.

[0018] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1 This is an exemplary embodiment of the present application illustrating the heat transfer path of a ceramic manifold microchannel radiator for cooling automotive-grade IGBT modules in the relevant art; Figure 2 This is a top view of a cover plate, a spoiler, a ceramic substrate, and an IGBT module, as illustrated in an exemplary embodiment of this application. Figure 3 This is a schematic diagram illustrating the flow path of the cooling medium in an exemplary embodiment of this application.

[0020] Figure label: 1-Cover plate; 2-Spoiler; 3-Ceramic substrate; 4-IGBT module; 11-Cooling medium inlet; 12-Inlet channel; 13-Manifold channel; 14-Bypass channel; 15-Outlet channel; 16-Cooling medium outlet; 21-Sub-channel; 22-Return channel; 31-Sub-channel; 41-Electronic components. Detailed Implementation

[0021] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0022] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of this application. The drawings only show the components related to this application and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0023] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the present application. However, it will be apparent to those skilled in the art that embodiments of the present application may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the present application.

[0024] Figure 1 This is an exemplary embodiment of the present application illustrating the heat transfer path of a ceramic manifold microchannel radiator for cooling automotive-grade IGBT modules in the relevant art, such as... Figure 1 As shown, the ceramic manifold microchannel heat sink for automotive-grade IGBT module cooling mainly conducts the generated heat to the ceramic layer through the IGBT module packaging structure (e.g., composed of a chip bonding layer and a copper layer), and then dissipates the heat through thermal convection between the manifold heat sink and the ambient temperature. In the above structure, the complex IGBT module packaging structure results in multiple layers of thermal resistance between the IGBT module and the heat sink, and there is also thermal resistance between the manifold heat sink and the ambient temperature, thereby reducing the heat dissipation efficiency.

[0025] The implementation details of the technical solutions in the embodiments of this application are described in detail below: Reference Figures 2-3 As shown, the heat dissipation device includes: The ceramic substrate 3 has heat dissipation channels to support the IGBT module 4 and to diffuse the cooling medium through the heat dissipation channels to exchange the heat conducted by the IGBT module 4.

[0026] The cover plate 1 is basically sealed to the ceramic and forms a sealed space. The cover plate 1 is provided with an inlet manifold structure for the cooling medium to flow into the sealed space and for the cooling medium to diffuse on the plane of the cover plate 1, and an outlet manifold structure for the cooling medium to flow out of the sealed space.

[0027] The baffle 2 is placed in a sealed space. The baffle 2 is provided with a diversion channel and a return channel 22. The diversion channel is connected to the inlet manifold structure and the heat dissipation channel. The diversion channel is used to guide the cooling medium that diffuses in the plane of the cover plate 1 into the heat dissipation channel. The return channel 22 is connected to the outlet manifold structure and the heat dissipation channel. The return channel 22 is used to guide the cooling medium that diffuses in the heat dissipation channel back to the outlet manifold structure.

[0028] In one embodiment of this application, a ceramic substrate 3, a cover plate 1, and a baffle plate 2 are provided. A heat dissipation channel is provided on the ceramic substrate 3, an inlet manifold structure and an outlet manifold structure are provided on the cover plate 1, and a diversion channel and a return channel 22 are provided on the baffle plate 2. The cooling medium flows into the sealed space through the inlet manifold structure and diffuses on the plane of the cover plate 1. While the cooling medium diffuses, the diversion channel guides the cooling medium into the heat dissipation channel. After the cooling medium diffuses in the heat dissipation channel, it flows into the return channel 22 and flows out of the sealed space through the outlet manifold structure. The above structure configuration enables the cooling medium to form a return flow in the sealed space, shortens the flow path of the cooling medium, reduces the resistance during the flow of the cooling medium, and increases the flow rate of the cooling medium. When the diffusion rate of the cooling medium in the heat dissipation channel increases, the rate of heat exchange with the heat conducted from the IGBT module 4 to the ceramic substrate 3 also increases accordingly, thereby improving the cooling effect on the IGBT module 4. It has low dependence on the thermal conductivity of the metal material and the characteristics of the cooling medium, and has the effect of saving the manufacturing cost of the heat dissipation device.

[0029] In one embodiment of this application, the cooling medium is automotive coolant: 50% ethylene glycol aqueous solution, and the ceramic substrate 3 is AlN (Aluminum Nitride) ceramic substrate 3, which has the characteristics of high thermal conductivity, high insulation, low coefficient of thermal expansion and high strength and is widely used in the field of power devices.

[0030] In one embodiment of this application, the inlet manifold structure includes: The manifold channel 13 is located on the lower surface of the cover plate 1 and communicates with the distribution channel, and is used to allow the cooling medium to flow into the distribution channel.

[0031] The inlet channel 12 is located on one side of the cover plate 1 and is connected to the manifold channel 13 for supplying cooling medium to flow into the manifold channel 13.

[0032] The cooling medium inlet 11 is located on one side edge of the cover plate 1 and is connected to the inlet channel 12 for the cooling medium to flow into the inlet channel 12.

[0033] In one embodiment of this application, during the operation of the IGBT module 4, the heat generated by the IGBT module 4 is conducted to the ceramic substrate 3. The cooling medium enters the sealed space through the cooling medium inlet 11 and diffuses to the other side of the cover plate 1 through the inlet channel 12 and the manifold channel 13. During the diffusion of the cooling medium to the other side of the cover plate 1, it passes through the diversion channel, which guides the cooling medium and allows it to enter the heat dissipation channel. After diffusing in the heat dissipation channel, the cooling medium flows into the return channel 22 and flows out of the sealed space through the outlet manifold structure. The cooling medium exchanges heat with the heat conducted from the IGBT module 4 to the ceramic substrate 3, thereby achieving the effect of cooling the IGBT module 4.

[0034] In one embodiment of this application, the number of manifold channels 13 is set to multiple (e.g., 6), and each manifold channel 13 is connected to the inlet channel 12. This facilitates the uniform distribution of the cooling medium to the manifold channel 13, making the distribution of the cooling medium on the plane of the cover plate 1 more uniform, reducing the flow difference of the cooling medium in different manifold channels 13, thereby improving the flow distribution and flow uniformity of the cooling medium. This also helps to reduce the difference in heat exchange between the cooling medium and different areas of the ceramic substrate 3, and improve the uniformity of heat dissipation to different areas of the IGBT module 4.

[0035] In one embodiment of this application, the manifold channel 13 is a tapered channel, and the width of the end of the tapered channel that connects to the inlet channel 12 is smaller than the width of the end of the tapered channel that is away from the inlet channel 12.

[0036] In one embodiment of this application, the manifold channel 13 is a tapered channel, and the width of the end of the tapered channel connected to the inlet channel 12 is smaller than the width of the end of the tapered channel away from the inlet channel 12, so that the tapered channel forms a gradually expanding flow channel, which helps to reduce the resistance of the cooling medium to diffuse in the tapered channel. At the same time, it can promote the cooling medium flowing into the cooling medium inlet 11 in the inlet channel 12 and the manifold channel 13, thereby accelerating the flow speed of the cooling medium and promoting the cooling medium to enter the heat dissipation channel from the diversion channel.

[0037] In one embodiment of this application, the outlet manifold structure includes: The bypass channel 14 is located on the lower surface of the cover plate 1 and communicates with the return channel 22, and is used to contain the cooling medium after return.

[0038] The outlet channel 15 is located on the other side of the cover plate 1 and is connected to the bypass channel 14. It is used to collect the cooling medium after the return flow.

[0039] The cooling medium outlet 16 is located on the other side edge of the cover plate 1 and is connected to the outlet channel 15 for the cooling medium after recirculation to flow out of the outlet channel 15.

[0040] In one embodiment of this application, during the operation of the IGBT module 4, the heat generated by the IGBT module 4 is conducted to the ceramic substrate 3. The cooling medium enters the sealed space through the cooling medium inlet 11 and diffuses to the other side of the cover plate 1 through the inlet channel 12 and the manifold channel 13. During the diffusion of the cooling medium to the other side of the cover plate 1, it passes through the diversion channel, which guides the cooling medium and allows it to enter the heat dissipation channel. During the diffusion of the cooling medium in the heat dissipation channel, it exchanges heat with the heat conducted from the IGBT module 4 to the ceramic substrate 3. Then, the cooling medium flows into the return channel 22 and flows out of the sealed space through the bypass channel 14, the outlet channel 15 and the cooling medium outlet 16, carrying away the heat from the ceramic substrate 3 and achieving heat dissipation for the IGBT module 4.

[0041] In one embodiment of this application, the outlet channel 15 is arranged opposite to the inlet channel 12, and the cooling medium inlet 11 is arranged opposite to the cooling medium outlet 16. A power pump to accelerate the inflow of cooling medium can be used at the cooling medium outlet 16, and a power pump to accelerate the outflow of cooling medium can be used at the cooling medium inlet 11 to increase the flow rate of cooling medium.

[0042] In one embodiment of this application, the manifold channel 13 and the bypass channel 14 are grouped together, the shunt channel and the return channel 22 are grouped together, and the heat dissipation channels are partitioned. The partitioned heat dissipation channels have a one-to-one correspondence with the grouped shunt channels and the return channels 22. The grouped shunt channels and the return channels 22 have a one-to-one correspondence with the grouped manifold channel 13 and the bypass channel 14. The partitioned heat dissipation channels correspond to the positions of the electronic components 41 in the IGBT module 4.

[0043] In one embodiment of this application, the grouped manifold channels 13 and bypass channels 14 include two manifold channels 13 and two bypass channels 14, wherein the two manifold channels 13 are located in the middle, and the two bypass channels 14 are located on both sides of the two manifold channels 13. The number of manifold channels 13 and bypass channels 14 in the grouped manifold channels 13 and bypass channels 14 can also be set to other values, which are not specifically limited here. The grouped diversion channels and return channels 22 include two diversion channels and two return channels 22, wherein the two diversion channels are located in the middle, and the two return channels 22 are located on both sides of the two diversion channels. The number of diversion channels and return channels 22 in the grouped diversion channels and return channels 22 can also be set to other values, which are not specifically limited here.

[0044] In one embodiment of this application, when there are multiple arrangement areas of electronic components 41 in the IGBT module 4, the number of partitions of the heat dissipation channel is the same as the number of arrangement areas of electronic components 41 in the IGBT module 4, and the partition positions of the heat dissipation channel are set to correspond to the area positions of the electronic components 41. The partitioned heat dissipation channel areas are set to correspond to the grouped shunt channel and return channel 22 areas, and the grouped shunt channel and return channel 22 areas are set to correspond to the grouped manifold channel 13 and bypass channel 14 areas.

[0045] In one embodiment of this application, the heat dissipation channels are partitioned, the manifold channel 13 and the bypass channel 14 are grouped together, and the branch channel and the return channel 22 are grouped together. This allows the cooling medium to simultaneously form multiple flow paths within the sealed space, enabling simultaneous cooling of electronic components 41 in different areas of the IGBT module 4, thus improving the cooling effect of the IGBT module 4. Furthermore, the partitioned heat dissipation channels shorten the flow path of the cooling medium, increasing the flow rate of the cooling medium within the sealed space, thereby improving the heat exchange efficiency between the cooling medium and the ceramic substrate 3.

[0046] In one embodiment of this application, the diversion channel is correspondingly arranged with the manifold channel 13, and the return channel 22 is correspondingly arranged with the bypass channel 14. This helps to reduce the resistance of the cooling medium flowing from the manifold channel 13 into the heat dissipation channel through the diversion channel, and to reduce the resistance of the cooling medium flowing from the heat dissipation channel into the bypass channel 14 through the return channel 22, thereby increasing the flow rate of the cooling medium in the flow path.

[0047] In one embodiment of this application, the diversion channel includes: a plurality of sub-channels 21; different sub-channels 21 correspond to different location regions of the manifold channel 13; The heat dissipation channel includes multiple sub-channels 31, with different sub-channels 21 corresponding to different sub-channels 31 in the heat dissipation channel.

[0048] In one embodiment of this application, each manifold channel 13 corresponds to multiple sub-channels 21. Different sub-channels 31 in the heat dissipation channel are grouped according to odd and even order. Different sub-channels 21 correspond to different groups of sub-channels 31. When the cooling medium diffuses in the manifold channel 13, the cooling medium flows into different sub-channels 21 in sequence, thereby guiding the cooling medium to flow alternately into the middle area of ​​different groups of sub-channels 31 in the heat dissipation channel. The cooling medium diffuses to both sides in the middle area of ​​the sub-channel 31, forming a counterflow of cooling medium, which has the effect of accelerating the flow of cooling medium. Furthermore, the flow of cooling medium from the middle area of ​​the sub-channel 31 to both sides of the sub-channel 31 further shortens the flow path of the cooling medium.

[0049] In one embodiment of this application, the width-to-height ratio of each sub-channel 21 ranges from 0.36 to 1.14. Each sub-channel 21 is integrated and encapsulated within the ceramic substrate 3, allowing the cooling medium to directly exchange heat with the ceramic substrate 3. This helps reduce the multilayer thermal resistance caused by the multilayer encapsulation structure and improves cooling efficiency. Furthermore, the cooling medium outlet 16 and the cooling medium inlet 11 are located on both sides of the lower surface of the cover plate 1, which helps to reduce the encapsulation volume. The purpose of setting the width-to-height ratio of a sub-channel 21 to 0.36-1.14 is to reduce the flow pressure drop of the cooling medium within the sub-channel 21 by reducing the length of each sub-channel 21, thereby increasing the flow rate of the cooling medium.

[0050] In one embodiment of this application, the setting direction of each sub-channel 21 is perpendicular to the setting direction of the return channel 22. This setting method allows the cooling medium to diffuse laterally when it enters the middle area of ​​each sub-channel 31, effectively avoiding local heat accumulation.

[0051] In one embodiment of this application, multiple sub-channels 31 are arranged in parallel and equidistantly at different locations of the electronic components 41. The number of sub-channels 31 can be set to 42 or other values, which are not specifically limited here. The uniform distribution of multiple sub-channels 31 has a diversion function, which makes the cooling medium evenly distributed at the locations of the electronic components 41, reduces the heat transfer effect of the cooling medium on the different locations of the electronic components 41, and improves the temperature consistency of the different locations of the electronic components 41.

[0052] In one embodiment of this application, the width of the end of the tapered channel that is connected to the inlet channel 12 is 4-6.5 mm, the width of the end of the tapered channel that is away from the inlet channel 12 is 7-10 mm, and the height of the tapered channel is 1.25-5 mm.

[0053] In one embodiment of this application, the width of the end of the tapered channel connected to the inlet channel 12 is set to 4-6.5 mm, and the width of the end of the tapered channel away from the inlet channel 12 is set to 7-10 mm, thereby forming a forward gradually expanding flow channel. The forward gradually expanding flow channel helps to reduce the forward flow resistance, promotes the cooling medium to enter the inlet channel 12 from the cooling medium inlet 11, and accelerates the cooling medium to flow from the manifold channel 13 into the heat dissipation channel through the branch channel.

[0054] In one embodiment of this application, the ceramic substrate 3 is fixedly connected to the IGBT module 4, the ceramic substrate 3 is sealed to the baffle 2, and the baffle 2 is sealed to the cover plate 1.

[0055] In one embodiment of this application, the sealed connection between the ceramic substrate 3 and the baffle 2 and the sealed connection between the baffle 2 and the cover plate 1 is beneficial to improving the sealing performance between the ceramic substrate 3, the baffle 2 and the cover plate 1, and preventing the cold zone medium from leaking from the sealed space, which would affect the heat dissipation effect on the IGBT module 4.

[0056] Figure 3 This is a schematic diagram illustrating the flow path of the cooling medium in an exemplary embodiment of this application, as shown below. Figure 3 As shown, the cooling medium flow path includes: ① Cooling medium enters from the cooling medium inlet 11 on the cover plate 1; ② Cooling medium flows from the cooling medium inlet 11 into the inlet channel 12; ③ Cooling medium enters the manifold channel 13 uniformly from the inlet channel 12. The manifold channel 13 adopts a forward gradually expanding flow channel design, which reduces the forward flow resistance and allows the cooling medium to flow smoothly into the manifold channel 13; ④ Cooling medium flows from the manifold channel 13 into the sub-channel 21 on the baffle 2, and the sub-channel 21 on the baffle 2 achieves the diversion effect of the cooling medium; ⑤ Baffle 2... The sub-channels 21 on the flow plate 2 guide the cooling medium to flow alternately into the middle area of ​​the sub-channels 31 in different groups, and diffuse to both sides of the sub-channels 31 to form a counter-current flow, thereby generating a significant flow velocity acceleration area and increasing the flow velocity of the cooling medium; ⑥ The cooling medium flows into the return channel 22 and flows upward into the bypass channel 14 through the return channel 22; ⑦ After entering the bypass channel 14, the cooling medium flows to the outlet channel 15; ⑧ The cooling medium enters the cooling medium outlet 16 through the outlet channel 15; ⑨ The cooling medium flows out through the cooling medium outlet 16.

[0057] In one embodiment of this application, simulation data obtained during the heat dissipation process of the IGBT module 4 using the heat dissipation device designed in this application, and simulation data obtained during the heat dissipation process of the IGBT module 4 using the Pin-fin structure heat dissipation device are shown in the table below: Table 1 As shown in Table 1, compared with the Pin-fin structure heat dissipation device, the heat dissipation device designed in this application reduces the maximum temperature of IGBT module 4 by 14.61℃, the maximum temperature difference between IGBT modules 4 by 9.46℃, and keeps the maximum temperature difference between IGBT modules 4 within 2.79℃. The total thermal resistance of the heat dissipation device is reduced to 0.219℃ / W, and the average heat transfer coefficient of the heat dissipation device can be increased to 12427 W / (m²·K), which is 4 times that of the Pin-fin structure heat dissipation device. Compared with the Pin-fin structure heat dissipation device, the total thermal resistance of the heat dissipation device designed in this application is reduced by 24.2%. From the above data comparison, it can be seen that the heat dissipation device designed in this application greatly reduces the multi-layer thermal resistance of the complex IGBT module 4 packaging structure, reduces the maximum junction temperature of IGBT module 4, and reduces the maximum temperature difference between IGBT modules 4, showing superior performance in optimizing pump power consumption.

[0058] The above data comparison verifies the effectiveness of the heat dissipation device structure designed in this application. That is, the forward gradually expanding flow channel design of the conical manifold channel 13 reduces the forward flow resistance of the cooling medium, allowing the cooling medium to flow smoothly into different sub-channels 31 in the heat dissipation channel through the diversion channel, and achieves diversion through different sub-channels 31, thereby improving the temperature uniformity during the heat dissipation of the IGBT module 4. The sub-flow channel 21 in the baffle 2 guides the cooling medium to flow alternately into different groups of sub-channels 31, forming a counter-current flow in the sub-channels 31, thereby generating a significant flow velocity acceleration area, increasing the flow velocity of the cooling medium, and thus improving the cooling effect on the IGBT module 4.

[0059] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A ceramic manifold microchannel heat dissipation device for IGBT modules, characterized in that, The heat dissipation device includes: A ceramic substrate, on which heat dissipation channels are formed for supporting IGBT modules, and through which cooling medium is diffused to exchange the heat conducted by the IGBT modules; A cover plate is basically sealed to the ceramic and forms a sealed space. The cover plate is provided with an inlet manifold structure for the cooling medium to flow into the sealed space and for the cooling medium to diffuse on the plane of the cover plate, and an outlet manifold structure for the cooling medium to flow out of the sealed space. A baffle plate is placed within the sealed space. The baffle plate is provided with a diversion channel and a return channel. The diversion channel is connected to the inlet manifold structure and the heat dissipation channel. The diversion channel is used to guide the cooling medium that diffuses on the cover plate plane into the heat dissipation channel. The return channel is connected to the outlet manifold structure and the heat dissipation channel. The return channel is used to guide the cooling medium that diffuses in the heat dissipation channel back to the outlet manifold structure.

2. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 1, characterized in that, The inlet manifold structure includes: A manifold channel is disposed on the lower surface of the cover plate and communicates with the distribution channel for allowing the cooling medium to flow into the distribution channel; An inlet channel is located on one side of the cover plate and communicates with the manifold channel for allowing the cooling medium to flow into the manifold channel; A cooling medium inlet is located on one side edge of the cover plate and communicates with the inlet channel for the cooling medium to flow into the inlet channel.

3. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 2, characterized in that, The manifold channel is a tapered channel, and the width of the end of the tapered channel that connects to the inlet channel is smaller than the width of the end of the tapered channel that is away from the inlet channel.

4. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 2, characterized in that, The outlet manifold structure includes: A bypass channel is provided on the lower surface of the cover plate and communicates with the return channel to accommodate the cooling medium after return. An outlet channel is located on the other side of the cover plate and communicates with the bypass channel to collect the returned cooling medium. A cooling medium outlet is located on the other side edge of the cover plate and communicates with the outlet channel, for the cooling medium after recirculation to flow out of the outlet channel.

5. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 4, characterized in that, The manifold channel and the bypass channel are grouped together, the shunt channel and the return channel are grouped together, and the heat dissipation channel is partitioned. The partitioned heat dissipation channel has a one-to-one correspondence with the grouped shunt and return channels, and the grouped shunt and return channels have a one-to-one correspondence with the grouped manifold channel and bypass channel. The partitioned heat dissipation channel corresponds to the position of the electronic components in the IGBT module.

6. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 4, characterized in that, The diversion channel is positioned opposite the manifold channel, and the return channel is positioned opposite the bypass channel.

7. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 6, characterized in that, The diversion channel includes: multiple sub-channels; different sub-channels correspond to different location regions of the manifold channel; The heat dissipation channel includes multiple sub-channels, with different sub-channels corresponding to different sub-channels in the heat dissipation channel.

8. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 7, characterized in that, The width-to-height ratio of each sub-channel ranges from 0.36 to 1.

14.

9. The ceramic manifold microchannel heat dissipation device for IGBT modules according to claim 3, characterized in that, The width of the conical channel at the end connected to the entrance channel ranges from 4 to 6.5 mm, the width of the conical channel at the end away from the entrance channel ranges from 7 to 10 mm, and the height of the conical channel ranges from 1.25 to 5 mm.

10. The ceramic manifold microchannel heat dissipation device for an IGBT module according to any one of claims 1-9, characterized in that, The ceramic substrate is fixedly connected to the IGBT module, and the ceramic substrate is sealed to the baffle plate, which is sealed to the cover plate.

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