Embedded bridging package substrate and manufacturing method thereof

Abstract

Implementations relate to an embedded bridge package substrate comprising: a glass core having a cavity and a through electrode; the bridge is arranged in the cavity; the integrated electrode is arranged on one surface of the bridge and one surface of the glass core; and an insulating material disposed between the glass core and the bridge and between the integrated electrodes. The bridge comprises: a bridge core as a support; and a bridge electrode disposed inside the bridge core, the bridge electrode electrically connecting at least two points of the one surface of the bridge to each other, both ends of the bridge electrode being exposed to the surface of the bridge core. The integrated electrode is a conductive layer electrically connected to at least one of the through electrode and the bridge electrode.

Description

Technical Field

[0001] An example relates to a packaging substrate with bridging embedded in a glass core and a method for manufacturing the same. Background Technology

[0002] In the manufacture of electronic components, the process of implementing circuits on a semiconductor wafer is called the front-end (FE) process, and the process of assembling the wafer into a state that can be used in an actual product is called the back-end (BE) process. Packaging processes are also included in subsequent processes.

[0003] In recent years, four core technologies in the semiconductor industry have driven the rapid development of electronic products: semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. Semiconductor technology is evolving in various forms, such as linewidths below the micrometer level (nanometer units), tens of millions of cells, high-speed operation, and high heat dissipation. However, these advancements are not yet supported by technologies that can comprehensively package these semiconductors. Therefore, the electrical performance of a semiconductor sometimes depends on packaging technology and corresponding electrical connections, rather than the performance of the semiconductor technology itself.

[0004] The materials used for packaging substrates are ceramic or resin, but recently there has been research into using silicon or glass as high-end packaging substrates. In particular, glass substrates are being used to develop packaging substrates with cavity structures.

[0005] Relevant prior art includes US Patent Publication No. US2022 / 0028788A1 and US Patent Publication No. US2021 / 0028080A1, etc. Summary of the Invention

[0006] The problem the invention aims to solve The purpose of this embodiment is to provide a packaging substrate and a method for manufacturing the same, wherein a bridging element is embedded in a glass core to improve the manufacturability and power efficiency of the packaging substrate.

[0007] Another objective of the implementation example is to provide a packaging substrate and a method for manufacturing the same, which overcomes the processing difficulties of flat glass and has embedded bridging.

[0008] means for solving problems To achieve the aforementioned objective, one embodiment of the embedded bridging package substrate includes: a glass core having a cavity and a through electrode; a bridging disposed in the cavity; an integrated electrode disposed on a surface of the bridging and a surface of the glass core; and an insulating material disposed between the glass core and the bridging and between the integrated electrode.

[0009] The bridging includes: a bridging core serving as a support; and a bridging electrode disposed inside the bridging core, the bridging electrode electrically connecting at least two points on the bridging surface to each other, and the two ends of the bridging electrode being exposed on the surface of the bridging core.

[0010] The integrated electrode is a conductive layer electrically connected to at least one of the through electrode and the bridging electrode.

[0011] The lower part of the cavity may also include a fixing part.

[0012] The fixing part can be arranged opposite to the integrated electrode in such a way that the bridge is placed in the middle.

[0013] The packaging substrate may include a first die and a second die disposed on the integrated electrode.

[0014] The electrical signal between the first grain and the second grain can be transmitted through the bridging electrode.

[0015] The integrated electrode may include: a first integrated electrode disposed on the glass core or the bridge; and a second integrated electrode disposed on the first integrated electrode.

[0016] The first integrated electrode may include a first vertical conductive layer, a first planar conductive layer, and combinations thereof that are directly connected to the through electrode or bridging electrode.

[0017] The second integrated electrode may include a second vertical conductive layer, a second planar conductive layer, and combinations thereof connected to the conductive layer of the first integrated electrode.

[0018] A lower insulating cover may be provided at the lower part of the glass core.

[0019] The fixing part may be located between the bridge and the lower insulating cover.

[0020] The fixing part may include an adhesive layer.

[0021] The packaging substrate may also be provided with a sealing layer that encapsulates the first die and the second die, and a lead frame that encapsulates the sealing layer.

[0022] The bridging may also include a bridging through electrode that runs vertically through the bridging core.

[0023] The integrated electrode may be a conductive layer electrically connected to at least one of the through electrode, the bridging electrode, and the bridging through electrode.

[0024] The bridging core may include plate-shaped silicon or plate-shaped silicon carbide.

[0025] It may include a third integrated electrode disposed on the second integrated electrode.

[0026] The third integrated electrode may include a third vertical conductive layer, a third planar conductive layer, and combinations thereof connected to the conductive layer of the second integrated electrode.

[0027] The bridging through electrode may also include a bridging electrode pad disposed on the upper or lower part of the bridging core.

[0028] The through electrode can be disposed in the core through hole, which is a through hole that penetrates the glass core. The glass core can be a flat glass that has the cavity and the core through hole by etching.

[0029] To achieve the aforementioned objective, another embodiment of the method for manufacturing an embedded bridging package substrate is used to manufacture the embedded bridging package substrate as described above. The method includes: a preparation step of preparing a glass core having a cavity and a through-hole; a fixing step of setting the bridging in the cavity and fixing its position; a patterning step of setting a circuit pattern on the glass core and the bridging; and a removal step of removing the lower part of the glass core.

[0030] The fixing step may be a step of forming an adhesive layer between one surface of the cavity and one surface of the bridge for fixing.

[0031] The glass core can be divided into a first part with the cavity and a second part without the cavity in the vertical direction.

[0032] The removal step may be a step of removing part or all of the second part.

[0033] The glass core can be a laminated glass composed of a first glass and a second glass.

[0034] The first glass may have a cavity and a through hole.

[0035] The second glass may not have a through cavity.

[0036] Invention Effects The embedded bridging packaging substrate and its manufacturing method in the implementation example employ a structure in which the bridging is built into the substrate, providing a packaging substrate and its manufacturing method with improved power efficiency, etc. Furthermore, a method for manufacturing a packaging substrate can be provided that overcomes the difficulties in processing flat glass and integrates the bridging within the flat glass. Attached Figure Description

[0037] Figure 1a and Figure 1bThese are conceptual diagrams illustrating the glass core used in a method for manufacturing an embedded bridging encapsulation substrate according to an embodiment of the present invention, each through cross-section.

[0038] Figure 2a This is a conceptual diagram illustrating an example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, using cross-section, showing a glass core in which bridging is provided.

[0039] Figure 2b This is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core.

[0040] Figure 2c This is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core.

[0041] Figures 3a to 3c These are conceptual diagrams illustrating an example of the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, each through cross-section.

[0042] Figure 3d This is a conceptual diagram illustrating the step of forming the upper insulating cover after the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section.

[0043] Figure 4 This is a conceptual diagram illustrating an example of a removal step used in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section.

[0044] Figure 5a and Figure 5b These are conceptual diagrams illustrating an example of a packaging substrate for one implementation of the present invention, shown in cross-section.

[0045] Figure 6 This is a conceptual diagram illustrating an example of a packaged substrate with a die mounted according to an embodiment of the present invention through cross-section.

[0046] Figure 7a and Figure 7b These are conceptual diagrams illustrating the glass core used in a method for manufacturing an embedded bridging encapsulation substrate according to an embodiment of the present invention, each through cross-section.

[0047] Figure 8a This is a conceptual diagram illustrating an example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, using cross-section, showing a glass core in which bridging is provided.

[0048] Figure 8bThis is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core.

[0049] Figures 9a to 9c This is a conceptual diagram illustrating an example of the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section.

[0050] Figure 9d This is a conceptual diagram illustrating the step of forming the upper insulating cover after the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section.

[0051] Figure 10 This is a conceptual diagram illustrating an example of a removal step used in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section.

[0052] Figure 11a and Figure 11b These are conceptual diagrams illustrating an example of a packaging substrate for one implementation of the present invention, shown in cross-section.

[0053] Figure 12 This is a conceptual diagram illustrating an example of a packaged substrate with a die mounted according to an embodiment of the present invention through cross-section.

[0054] Explanation of reference numerals in the attached figures 1: Packaging substrate; 20: Glass core; 53: Upper connection structure 22: Flat glass; 55: Lower connecting structure 23: Laminated glass 30, 30a, 30b: Grains, first grain, second grain 23a: First glass 70: Bridging 23b: Second glass; 72: Bridging core 24: Cavity 74: Bridging Electrode 26: Through-hole 74a: Bridging internal electrode 26p: Through-hole pad; 76: Fixing part 74t: Bridging through electrode; 83: Upper insulating cover 74p: Bridging electrode pads 40: Circuit pattern 42: Through electrode 85: Lower insulating cover 46: Integrated electrode; 81: Sealing material 87: Lead frame 46a: First integrated electrode 46b: Second integrated electrode; 46c: Third integrated electrode 45: Insulation materials Detailed Implementation To aid in a comprehensive understanding of the methods, apparatus, and / or systems described herein, the following detailed description is provided. However, upon understanding the content of this application, various modifications, alterations, and equivalents of the methods, apparatus, and / or systems described herein will become clear. For example, the sequence of actions described herein is merely exemplary and is not limited to the actions recorded herein. Except for steps that must be performed in a specific order, the sequence of actions may be changed based on the understanding of the content of this application. Furthermore, upon understanding the disclosure of this application, descriptions of known features may be omitted to improve clarity and conciseness. However, omitting these features and their descriptions is not intended to treat them as conventional knowledge.

[0055] The features described in this specification may be implemented in different forms and should not be construed as limited to the examples described in this specification. Rather, the embodiments described in this specification are provided to illustrate a portion of the various feasible methods, apparatuses, and / or systems described in this specification that will become clear upon understanding the disclosure of this application.

[0056] In this specification, the terms "first," "second," and "third," etc., are used to describe various components, constituent elements, regions, layers, or sections, but these components, constituent elements, regions, layers, or sections are not limited to these words. Rather, these terms are used to distinguish one component, constituent element, region, layer, or part from another component, constituent element, region, layer, or part. Therefore, without departing from the teachings of the embodiments, the first component, constituent element, region, layer, or section mentioned in the embodiments described in this specification may also be referred to as a second component, constituent element, region, layer, or section.

[0057] Throughout the specification, when referring to an element (e.g., a layer, region, or substrate) as being "on," "connected to," or "bonded to" another element, it can be described as being directly "on," "connected to," or "bonded to" another element, or as having one or more other elements between them. Conversely, when describing an element as being "directly on," "directly connected to," or "directly bonded to," no other elements can exist between them. Similarly, expressions such as "between," "directly between," "in contact with," and "directly in contact with" can also be interpreted as described above.

[0058] The terminology used in this specification is for illustrative purposes only and is not intended to limit the scope of this disclosure. Unless the context clearly indicates otherwise, the singular forms used in this specification include the plural forms as well. The term "and / or" as used in this specification includes one or more combinations of related catalog items. The terms "comprising," "constituting," and "containing" as used in this specification mean the presence of a specified feature, number, action, element, constituent element, and / or combination thereof, but do not preclude the presence or addition of more than one other feature, number, action, element, constituent element, and / or combination thereof. In this specification, the use of the term "may" in relation to an example or embodiment (e.g., what is included or implemented in an example or embodiment) means that at least one example or embodiment includes or implements such a feature, but not all examples are limited thereto.

[0059] In this application, "B is located on A" means that B is in direct contact with A or that there are other layers or structures in between and that are located on A. Therefore, it should not be interpreted as B being in direct contact with A.

[0060] Unless otherwise defined, all terms used in this specification have the same meaning as commonly understood in one of the conventional techniques of the art to which this invention pertains. Terms identical to those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the prior art and the context of this invention, wherein, unless explicitly defined herein, they should not be interpreted in an idealized or overly formal sense.

[0061] Throughout this specification, the term "combination of them" included in the Markush form of the expression means a mixture or combination of one or more of the constituent elements selected from the group of constituent elements described in the Markush form of the expression, thereby implying that it includes one or more constituent elements selected from the group of said constituent elements.

[0062] In one or more of the examples, the description of “A and / or B” means “A, B or A and B”.

[0063] In the above examples, terms such as "first," "second," "A," or "B" are used to distinguish the same terms from each other.

[0064] In one or more of the examples, “~” can refer to a compound that includes a compound equivalent to “~” or a derivative of “~”.

[0065] In the above examples, unless otherwise specified, the singular expression herein is interpreted to include not only the singular form but also the plural form.

[0066] Manufacturing method of packaging substrate (1) Figure 1a and Figure 1b These are conceptual diagrams illustrating the glass core used in a method for manufacturing an embedded bridging encapsulation substrate according to an embodiment of the present invention, each through cross-section. Figure 2a This is a conceptual diagram illustrating an example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, using cross-section, showing a glass core in which bridging is provided. Figure 2b This is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core. Figure 2c This is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core. Figures 3a to 3c These are conceptual diagrams illustrating an example of the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, each through cross-section. Figure 3d This is a conceptual diagram illustrating the step of forming the upper insulating cover after the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section. Figure 4 This is a conceptual diagram illustrating an example of a removal step used in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section. Figure 5a and Figure 5b These are conceptual diagrams illustrating an example of a packaging substrate for one implementation of the present invention, shown in cross-section. Figure 6 This is a conceptual diagram illustrating an example of a package substrate with a die mounted according to an embodiment of the present invention through cross-section. A method for manufacturing a package substrate with embedded bridging will now be described with reference to the accompanying drawings.

[0067] To achieve the aforementioned objective, a method for manufacturing an embedded bridging package substrate 1 is provided. One embodiment of the method for manufacturing an embedded bridging package substrate 1 includes a preparation step, a fixing step, a patterning step, and a removal step.

[0068] The preparation step is to prepare a glass core 20 having a cavity 24 and a core through hole 26.

[0069] The glass core 20 is a glass substrate (flat glass) having a first surface and a second surface that are opposite to each other, and is provided with a cavity 24 and a core through hole 26.

[0070] The cavity 24 is a structure (half-cavity) in which a recessed surface is formed in the glass core 20 or a structure (full-cavity) through which a portion of the flat glass is formed. In the implementation example, both are referred to as cavity 24.

[0071] The core through-hole 26 is a through-hole formed by penetrating the flat glass along the thickness direction of the glass substrate. The shape of the opening of the core through-hole 26 can be circular, but is not limited to this. The shape of the opening can be elliptical, quadrilateral, or other shapes, and multiple shapes of openings can be mixed in a single glass core.

[0072] The through-hole 26 is a through-hole that penetrates the glass substrate, and a conductive layer may be formed inside it or it may be filled with a conductive material. In this case, the through-hole 26 is referred to as the through electrode 42.

[0073] The glass core 20 is preferably made of a glass substrate used in semiconductors, such as a borosilicate glass substrate or an alkali-free glass substrate, but is not limited thereto.

[0074] Unlike the packaging substrate 1 after the removal step, the glass core 20 in the preparation step can be a thicker shape. This is because a portion of the glass core is removed in the removal step described later. The reason for using such a thick glass core and removing a portion of it will be explained below.

[0075] The glass core 20 in the preparation step can be processed into a flat glass 22 with a cavity 24 and a core through-hole 26 by etching a portion of it (see reference). Figure 1a The process of forming cavities 24 and / or vias 26 by etching flat glass 22 can be schematically performed as follows: First, a defective flat glass is formed at the location where the cavity and / or via will be formed. The defect can be formed using lasers, but is not limited to this. Then, the flat glass is chemically and / or physically etched. Different portions of the flat glass can be etched at different etching rates, and vias and cavities can be formed on the flat glass. In particular, with regard to chemical etching, its advantage is that even when the area of ​​the cavity is large or the number of vias is large, the process can be performed more efficiently by forming cavities and / or vias without increasing the etching time.

[0076] The glass core 20 in the preparation step can be a structure formed by providing a conductive layer on the flat glass 22. Schematically, the flat glass 22 can have a conductive material layered on the inner surface of the through-hole 26, or the interior of the through-hole 26 can be filled with a conductive material. When a conductive material is provided in part or all of the interior of the through-hole 26, it is referred to as a through electrode 42.

[0077] The glass core 20 in the preparation step can be a laminated glass formed by laminating a first glass 23a having a cavity and a through hole with a second glass 23b that essentially does not have a through cavity (full cavity) (see reference). Figure 1b In this case, the first glass 23a has a cavity and a through hole.

[0078] The through-hole of the first glass 23a can be a through electrode 42. If the first glass 23a with a through electrode 42 as described above is used for the subsequent steps after the preparation step, the efficiency of the manufacturing method can be further improved.

[0079] The first glass 23a and the second glass 23b can be used as the core through-hole 26 in the prepared step when they are laminated. The lamination can be performed by firmly laminating the two glass pieces, and schematically, anodic bonding can be used, but it is not limited to this.

[0080] Schematic, the glass core 20 in the preparation step may be provided with a through-hole pad 26p, which is disposed at one or both ends of the through electrode 42 of the flat glass 22 or the first glass 23a. In this case, the formation process of the integrated electrode 46 described later can be further simplified.

[0081] The fixing step is the step of setting the bridge 70 on the cavity 24 and fixing its position. Figure 2a The following attached diagrams illustrate the concept. Figure 1a The glass core 20, but the following process can also be applied in the same way. Figure 1b 20 glass cores.

[0082] A bridge 70 is a structure that can transmit electrical signals between two or more dies. The dies may be disposed on one surface of a package substrate.

[0083] A bridging electrode 74 is provided on the bridging 70, and the bridging electrode 74 is located inside the bridging 70. Furthermore, the end of the bridging electrode 74 is connected to at least two points on a surface of the bridging 70 (see reference). Figure 2a and Figure 2b wait).

[0084] The bridging 70 includes: a bridging core 72 serving as a support; and a bridging electrode 74 disposed inside the bridging core 72, the bridging electrode 74 electrically connecting at least two points on a surface of the bridging 70 to each other. Both ends of the bridging electrode 74 may be exposed on the surface of the bridging core 72. Alternatively, a bridging electrode pad 74p connected to the bridging electrode 74 may be exposed on the surface of the bridging core 72.

[0085] Optionally, the bridging electrode 70 is further provided with a bridging electrode pad 74p, which is disposed on the bridging electrode 74. Specifically, the bridging electrode 74 may further include a bridging electrode pad 74p, which is connected to the bridging core 72 and disposed on one surface of the bridging core 72 (see reference). Figure 2c ).

[0086] The bridging core 72 can be made of plate-shaped silicon or plate-shaped silicon carbide.

[0087] The bridging electrode 74 and bridging electrode pad 74p may use the same materials as those used in the conductive layer. Indicatively, copper or a copper alloy may be used, but not limited to these.

[0088] The fixing step is the step of fixing the positions of one surface of the cavity 24 and one surface of the bridge 70 so that they remain unchanged.

[0089] The fixing is performed by fixing part 76. Fixing part 76 fixes one surface of cavity 24 and one surface of bridge 70 by physical and / or chemical means.

[0090] Schematic, the fixing step may include a process of fixing the position by means of a bonding structure. In this case, the lower part of the bridge does not form a separate adhesive layer (physical fixing, see reference). Figure 2a ).

[0091] Schematic, the fixing step may include a process of fixing the position by providing an adhesive layer (chemical fixation, see below). Figure 2b Schematic illustration: The adhesive layer can be fixed by applying adhesive to the bonding surface, setting the bridging 70, and then curing the adhesive. Schematic illustration: The adhesive layer can also be fixed by placing an adhesive layer disposed on one surface of the bridging onto one surface of the cavity. The adhesive layer can be a silicone-based adhesive layer, an epoxy-based adhesive layer, etc., but is not limited to these.

[0092] The adhesive layer may be removed from the packaging substrate after the removal step described later. Alternatively, the adhesive layer may remain within the packaging substrate after the removal step described later.

[0093] The patterning step involves setting integrated electrodes 46 on the glass core 20 and the bridge 70. An insulating material 45 may be disposed in the space between the integrated electrodes 46.

[0094] Integrated electrode 46 is a conductive layer electrically connected to at least one of through electrode 42 and bridging electrode 74. The integrated electrode can be formed by a process in semiconductor manufacturing to form redistribution lines.

[0095] The patterning steps include the formation of the first integrated electrode 46a and the second integrated electrode 46b (see references respectively). Figure 3a and Figure 3b ).

[0096] The patterning steps include the formation of the first integrated electrode 46a, the second integrated electrode 46b, and the third integrated electrode 46c (see references respectively). Figure 3a , Figure 3b and Figure 3c ).

[0097] The first integrated electrode 46a includes a first vertical conductive layer, a first planar conductive layer, and combinations thereof, which are directly connected to the through electrode 42 or the bridging electrode 74. Furthermore, they are embedded through a first insulating material.

[0098] The second integrated electrode 46b is disposed on the first integrated electrode 46a.

[0099] The second integrated electrode 46b includes a second vertically oriented conductive layer, a second planarly oriented conductive layer, and combinations thereof connected to the conductive layer of the first integrated electrode 46a. Furthermore, they are embedded using a second insulating material.

[0100] The third integrated electrode 46c is disposed on the second integrated electrode 46b.

[0101] The third integrated electrode 46c includes a third vertical conductive layer, a third planar conductive layer, and combinations thereof connected to the conductive layer of the second integrated electrode 46b. Furthermore, they are embedded using a third insulating material.

[0102] Optionally, a fourth integrated electrode and a fifth integrated electrode may also be formed on the third integrated electrode.

[0103] Schematic, the process of forming the integrated electrodes of each layer can be carried out by forming a redistribution layer.

[0104] The glass core 20, which serves as the support for the encapsulation substrate 1, is flat glass, which is fragile. The flat glass may break at its edges or corners or crack itself due to impact, internal stress, etc.

[0105] Breakage can also occur during the fabrication of flat glass into packaging substrates. In particular, when forming redistribution layers on large-area flat glass, the repeated heating and cooling during the manufacturing process can cause stress to concentrate in the glass itself. Especially, the patterning step repeats these processes, and flat glass subjected to concentrated stress is easily damaged even by a small impact.

[0106] The inventors demonstrated through experiments that such breakage is more likely to occur when the thickness of the flat glass itself is thin. Furthermore, experiments also confirmed that glass cores with cavities are more difficult to manufacture. To address this issue, the implementation example uses a thicker flat glass core. In other words, the inventors proposed this implementation example by demonstrating that using a thicker glass core, even with a glass substrate having a cavity, can further reduce the occurrence of breakage.

[0107] Schematic, based on the thickness of the bridging 70, the thickness of the glass core 20 in the preparation step can be more than 2 times, 3 times, 4 times, 5 times, or 6 times. The thickness can be less than 15 times or less than 13 times.

[0108] Schematic, when the thickness of the bridging 70 is about 50 μm to about 70 μm, the thickness of the glass core 20 in the preparation step can be about 400 μm to about 600 μm.

[0109] The patterning step may include the process of injecting an insulating material into the glass core 20. The injection of the insulating material may also take place in the space between the cavity 24 and the bridging 70. Alternatively, the injection of the insulating material may take place in the space between the conductive layers of the integrated electrode 46.

[0110] The insulating material may be an organic-inorganic composite material such as Ajinomoto Build-up Film (ABF) or Polyimide Build-up Film, but is not limited to these. The insulating material layer may be formed by depressurized lamination of uncured or semi-cured insulating material sheets followed by curing, but is not limited to these methods.

[0111] The conductive layer can be made of copper, copper alloys, etc., but is not limited to these. Furthermore, after forming the seed layer, the conductive layer can be formed by electroplating the desired area, but is not limited to these methods.

[0112] The removal step is the step of removing the lower part of the glass core 20 (see reference). Figure 4 (The arrow indicates the direction of removal).

[0113] At this point, the lower part of the glass core 20 does not mean the upper or lower part in terms of position, but refers to a surface on the opposite side of the layer in which the integrated electrode is formed during the patterning step.

[0114] By employing a glass core 20 with a thickness greater than the cavity height (etch depth), the susceptibility to damage during the fixing or patterning steps can be reduced, and the process can be stabilized. However, the thick glass core 20 increases the weight of the packaging substrate itself and goes against the trend of semiconductor thinning, thus requiring its thickness to be reduced. Therefore, in this implementation example, a removal step is performed.

[0115] The removal step includes etching or grinding the lower part of the glass core 20. The etching may employ the physical and / or chemical etching methods described above. Illustratively, the grinding may employ a chemical mechanical polishing (CMP) process. Grinding may also be performed during the patterning step. In the process of forming the redistribution layer, the formation of the insulating material layer and the conductive layer involves selective electroplating, etc., in a predetermined pattern shape, and grinding is also performed during this process.

[0116] In one implementation example, the upper and lower parts of the glass core 20 that has undergone the patterning step can be flipped over and polished using the polishing machine employed in the patterning step.

[0117] The glass core 20 ground in the manner described above is thinner than the glass core 20 in the preparation step, resulting in a relatively thin packaging substrate 1 with bridging 70 on the cavity 24.

[0118] The glass core 20 is divided into a portion having the cavity 24 and a portion not having the cavity 24 along the vertical direction.

[0119] The removal step removes part or all of the portion where the cavity 24 is not provided.

[0120] The removal can be applied to cases where the glass core 20 is flat glass or laminated glass.

[0121] When a portion of the part without cavity 24 is removed by the removal process, the encapsulation substrate takes the shape of a half-cavity (not shown).

[0122] When all portions of the substrate not containing the cavity 24 are removed by the aforementioned removal process, the encapsulation substrate takes on a shape with a full cavity (see reference). Figure 4 ).

[0123] The latter case can be the removal of the fixing portion 76, such as the adhesive layer, in the first shape (see reference). Figure 5a Alternatively, it could be a second shape that retains the adhesive layer and is removed in a manner that creates a full cavity (see [reference]). Figure 5b ).

[0124] Regarding the first shape, even if the fixing part 76 is removed, the cavity wall and the bridging 70 are filled and fixed by insulating material or the like, and the position of the bridging 70 can remain unchanged.

[0125] With regard to the second shape, the fixing part 76 can be held, and in this state, the position of the bridging 70 can remain unchanged.

[0126] Optionally, after the patterning step, before the removal step, or after the removal step, the method for manufacturing the package substrate may further include an insulating cap forming step.

[0127] The insulating cover forming step is the step of forming an insulating cover on the integrated electrode 46 and / or under the glass substrate 20.

[0128] If the insulating cover is disposed on the integrated electrode 46, it is referred to as the upper insulating cover 83. The insulating cover may have an opening at a predetermined position, and may also have an upper connection structure 53 (see reference) that connects to the mounted die. Figure 3d , Figure 5a , Figure 5b ).

[0129] If the insulating cover is located at the lower part of the glass substrate 20, it is called the lower insulating cover 85. The insulating cover may have an opening at a predetermined position and may also have a lower connecting structure 55. Indicatively, the lower connecting structure 55 may be a solder ball or the like, but is not limited to this (see [reference]). Figure 5a , Figure 5b ).

[0130] After the removal step, the method for manufacturing the packaging substrate may further include a bonding step.

[0131] The bonding step involves placing the die 30 on the packaging substrate 1 and electrically connecting the circuit pattern 40 and the die 30. This connection includes not only direct connections but also indirect connections via other structures. Furthermore, the circuit pattern 40 is collectively referred to as the through electrode 42, the bridging electrode 74, and the integrated electrode 46.

[0132] Two or more dies 30 include a first die 31 and a second die 33, and the bonding step mounts the first die 31 and the second die 33 at predetermined positions on the packaging substrate 1. The accompanying drawings exemplarily show two dies, but are not limited thereto; two or more, three or more, or four or more dies may be disposed on the packaging substrate 1 of a single unit.

[0133] That is, the packaging substrate 1 may further include a first die 31 and a second die 33 disposed on the integrated electrode 46. The packaging substrate 1 can transmit electrical signals between the first die 31 and the second die 33 through the bridging electrode 74 with built-in bridging 70.

[0134] After the bonding step, the method for manufacturing the packaging substrate may further include a sealing step.

[0135] The sealing step involves placing a lead frame 87 on the die side of the packaging substrate 1 on which the die is mounted, and filling the space within the lead frame 87 with a sealing material 81 (see reference). Figure 6 Therefore, a packaging substrate 1 in which the position of the die on the packaging substrate is fixed and stable can be provided.

[0136] Embedded bridging packaging substrate (2) Figure 5a and Figure 5b These are conceptual diagrams illustrating an example of a packaging substrate for one implementation of the present invention, shown in cross-section. Figure 6 This is a conceptual diagram illustrating an example of a packaged substrate with a die mounted according to an embodiment of the present invention through cross-section. The following will refer to... Figures 5a to 6 The packaging substrate with embedded bridging is described in detail.

[0137] An embodiment of the embedded bridging package substrate 1 includes: a glass core 20 having a cavity 24 and a through electrode 42; a bridging 70 disposed in the cavity 24; an integrated electrode 46 disposed on a surface of the bridging 70 and a surface of the glass core 20; and an insulating material 45 disposed between the glass core 20 and the bridging 70 and between the integrated electrode 46.

[0138] The glass core 20 is a glass substrate (flat glass) having a first surface and a second surface that are opposite to each other, and is provided with a cavity 24 and a core through hole 26.

[0139] Cavity 24 is a structure (half-cavity) in which a recessed surface is formed in the glass core 20 or a structure (full-cavity) through which a portion of the flat glass is formed. In the implementation example, both are referred to as cavity 24.

[0140] The core through-hole 26 is a through-hole formed by penetrating the flat glass along the thickness direction of the glass substrate. The shape of the opening of the core through-hole 26 can be circular, but is not limited to this. The shape of the opening can be elliptical, quadrilateral, or other shapes, and multiple shapes of openings can be mixed in a single glass core.

[0141] The through-hole 26 is a through-hole that penetrates the glass substrate, and a conductive layer may be formed inside it or it may be filled with a conductive material. In this case, the through-hole 26 is referred to as the through electrode 42.

[0142] The glass core 20 is preferably made of a glass substrate used in semiconductors, such as a borosilicate glass substrate or an alkali-free glass substrate, but is not limited thereto.

[0143] The integrated electrode 46 is a conductive layer electrically connected to at least one of the through electrode 42 and the bridging electrode 74. The integrated electrode 46 is a conductive layer that is connected substantially in a vertical or horizontal direction and arranged according to a predetermined pattern.

[0144] An insulating material 45 may be disposed in the space between the integrated electrodes 46.

[0145] The integrated electrode 46 includes: a first integrated electrode 46a disposed on the glass core 20 or the bridge 70; and a second integrated electrode 46b disposed on the first integrated electrode 46a.

[0146] The first integrated electrode 46a includes a first vertical conductive layer, a first planar conductive layer, and combinations thereof. The first vertical conductive layer is directly connected to the through electrode 42 or the bridging electrode 74. The first planar conductive layer is connected to the first vertical conductive layer and has a pattern that expands along the planar direction.

[0147] The second integrated electrode 46b includes a second vertical conductive layer, a second planar conductive layer, and combinations thereof. The second vertical conductive layer is connected to the conductive layer of the first integrated electrode 46a. The second planar conductive layer is connected to the second vertical conductive layer and has a pattern that expands along the planar direction.

[0148] The integrated electrode 46 may include a third integrated electrode 46c disposed on the second integrated electrode 46b.

[0149] The third integrated electrode 46c includes a third vertical conductive layer, a third planar conductive layer, and combinations thereof. The third vertical conductive layer is connected to the conductive layer of the second integrated electrode 46b. The third planar conductive layer is connected to the third vertical conductive layer and has a pattern that expands along the planar direction.

[0150] The bridging 70 includes: a bridging core 72 serving as a support; and a bridging electrode 74 disposed inside the bridging core 72, the bridging electrode 74 electrically connecting at least two points on a surface of the bridging 70 to each other, and the two ends of the bridging electrode 74 being exposed on the surface of the bridging core 72.

[0151] A bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are disposed on one side of the packaging substrate.

[0152] A bridging electrode 74 is provided on the bridging 70, and the bridging electrode 74 is located inside the bridging 70. In addition, the ends of the bridging electrode 74 are connected to at least two points on a surface of the bridging 70.

[0153] The bridging 70 includes: a bridging core 72 serving as a support; and a bridging electrode 74 disposed inside the bridging core 72, the bridging electrode 74 electrically connecting at least two points on a surface of the bridging 70 to each other. Both ends of the bridging electrode 74 may be exposed on the surface of the bridging core 72. Alternatively, a bridging electrode pad 74p connected to the bridging electrode 74 may be exposed on the surface of the bridging core 72.

[0154] Optionally, the bridge 70 may further include a bridging through electrode (not shown) that passes through the bridge core 72 and is electrically connected to it. When the bridge 70 also includes a bridging through electrode, conductive layers of various structures can be formed in a smaller area, thereby forming a more compact and efficient package substrate.

[0155] Optionally, the bridging 70 may also be provided with a bridging electrode pad 74p, which is disposed on the bridging electrode 74 and / or the bridging through electrode.

[0156] Specifically, the bridging electrode 74 may further include a bridging electrode pad 74p disposed on a surface of the bridging core 72 and connected to the bridging core 72.

[0157] Specifically, the bridging through electrode may further include a bridging electrode pad 74p disposed on the upper or lower part of the bridging core 72 and connected to the bridging through electrode.

[0158] The bridging core 72 can be made of plate-shaped silicon (Si) or plate-shaped silicon carbide (SiC).

[0159] The bridging electrode 74, bridging through electrode 74t, and bridging electrode pad 74p can be made of materials used in the conductive layer. Indicatively, copper or copper alloys can be used, but not limited to these.

[0160] The fixing part 76 may be provided at the lower part of the bridge 70.

[0161] The lower part of the cavity 24 may also include a fixing part 76, which may be disposed opposite to the integrated electrode 46 in such a way that the bridge 70 is placed in the middle.

[0162] The fixing part 76 may be part of the bonding structure, and may be an adhesive layer. The adhesive layer may be a silicone adhesive layer or an epoxy adhesive layer, but is not limited thereto.

[0163] An upper insulating cover 83 may be provided on the upper part of the integrated electrode 46.

[0164] The lower part of the glass core 20 may be provided with a lower insulating cover 85.

[0165] The fixing part 76 may be located between the bridge 70 and the lower insulating cover 85. Schematic, the fixing part 76 may be an adhesive layer.

[0166] The upper insulating cover 83 may have an opening, and an upper connecting structure 53 may be provided on the upper part of the opening.

[0167] The lower insulating cover 85 may have an opening, and a lower connecting structure 55 may be provided at the lower part of the opening, schematically, a solder ball may be provided.

[0168] The packaging substrate 1 may also include a first die 31 and a second die 33 disposed on the integrated electrode 46. The multiple dies are collectively referred to as dies.

[0169] To illustrate, the die can be a semiconductor device, such as a CPU, GPU, or other computing device, or a memory device.

[0170] The bridge 70 built into the packaging substrate 1 enables smooth communication between the first die 31 and the second die 33, resulting in faster response speed and lower power consumption. Furthermore, the bridge 70 is equipped with a through-hole bridging electrode 74t, thus achieving smoother signal transmission and effective integration.

[0171] The packaging substrate 1 may also be provided with a sealing layer 81 that encapsulates the first die 31 and the second die 33, and a lead frame 87 that encapsulates the sealing layer 81. The sealing layer and the lead frame may be made of sealing materials and lead frames used in packaging substrates without limitation.

[0172] The aforementioned embedded bridging packaging substrate 1 provides a glass core-based packaging substrate in which bridging 70 is applied to the cavity 24 of the glass core 20, enabling die bridging connections in a compact size. Bridging connections are achieved by utilizing the glass core, which possesses the characteristics of an insulating substrate and the advantage of being able to serve as a support for microwires. Furthermore, the brittle glass core allows for the fabrication of a thinner packaging substrate 1 with a cavity structure, resulting in high reliability.

[0173] Manufacturing method of packaging substrate (2) Figure 7a and Figure 7b These are conceptual diagrams illustrating the glass core used in a method for manufacturing an embedded bridging encapsulation substrate according to an embodiment of the present invention, each through cross-section. Figure 8a This is a conceptual diagram illustrating an example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, using cross-section, showing a glass core in which bridging is provided. Figure 8bThis is a conceptual diagram illustrating, through cross-section, another example of a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, in which a bridging is provided in the glass core. Figures 9a to 9c This is a conceptual diagram illustrating an example of the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section. Figure 9d This is a conceptual diagram illustrating the step of forming the upper insulating cover after the patterning step in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section. Figure 10 This is a conceptual diagram illustrating an example of a removal step used in a method for manufacturing an embedded bridging package substrate according to an embodiment of the present invention, through cross-section. Figure 11a and Figure 11b These are conceptual diagrams illustrating an example of a packaging substrate according to one embodiment of the present invention, shown in cross-section. A method for manufacturing the in-line bridging packaging substrate will now be described with reference to the accompanying drawings.

[0174] To achieve the aforementioned objective, a method for manufacturing the embedded bridging package substrate 1 described later is provided. One embodiment of the method for manufacturing the embedded bridging package substrate 1 includes a preparation step, a fixing step, a patterning step, and a removal step.

[0175] The preparation step is to prepare a glass core 20 having a cavity 24 and a core through hole 26.

[0176] The glass core 20 is a glass substrate (flat glass) having a first surface and a second surface that are opposite to each other, and is provided with a cavity 24 and a core through hole 26.

[0177] Cavity 24 is a structure (half-cavity) in which a recessed surface is formed in the glass core 20 or a structure (full-cavity) through which a portion of the flat glass is formed. In the implementation example, both are referred to as cavity 24.

[0178] The core through-hole 26 is a through-hole formed by penetrating the flat glass along the thickness direction of the glass substrate. The shape of the opening of the core through-hole 26 can be circular, but is not limited to this. The shape of the opening can be elliptical, quadrilateral, or other shapes, and multiple shapes of openings can be mixed in a single glass core.

[0179] The through-hole 26 is a through-hole that penetrates the glass substrate, and a conductive layer may be formed inside it or it may be filled with a conductive material. In this case, the through-hole 26 is referred to as the through electrode 42.

[0180] The glass core 20 is preferably made of a glass substrate used in semiconductors, such as a borosilicate glass substrate, an alkali-free glass substrate, etc., but is not limited thereto.

[0181] Unlike the packaging substrate 1 after the removal step, the glass core 20 in the preparation step can be a thicker shape. This is because a portion of the glass core is removed in the removal step described later. The reason for using such a thick glass core and removing a portion of it will be explained below.

[0182] The glass core 20 in the preparation step can be processed into a flat glass 22 with a cavity 24 and a core through-hole 26 by etching a portion of it (see reference). Figure 7a The process of forming cavities 24 and / or vias 26 by etching flat glass 22 can be schematically performed as follows: First, a defective flat glass is formed at the location where the cavity and / or via will be formed. The defect can be formed using lasers, but is not limited to this. Then, the flat glass is chemically and / or physically etched. Different portions of the flat glass can be etched at different etching rates, and vias and cavities can be formed on the flat glass. In particular, with regard to chemical etching, its advantage is that even when the area of ​​the cavity is large or the number of vias is large, the process can be performed more efficiently by forming cavities and / or vias without increasing the etching time.

[0183] The glass core 20 in the preparation step can be a structure formed by providing a conductive layer on the flat glass 22. Schematic, the flat glass 22 may have a conductive material layered on the inner surface of the core through-hole 26, or the core through-hole 26 may be filled with a conductive material. When a conductive material is provided in part or all of the interior of the core through-hole 26, it is referred to as a through electrode 42.

[0184] The glass core 20 in the preparation step can be a laminated glass formed by laminating a first glass 23a having a cavity and a through hole with a second glass 23b that essentially does not have a through cavity (full cavity) (see reference). Figure 7b In this case, the first glass 23a has a cavity and a through hole.

[0185] The through-hole of the first glass 23a can be a through electrode 42. If the first glass 23a with a through electrode 42 as described above is used for the subsequent steps after the preparation step, the efficiency of the manufacturing method can be further improved.

[0186] The first glass 23a and the second glass 23b can be used as the core through-hole 26 in the prepared step when they are laminated. The lamination can be performed by firmly laminating the two glass pieces, and schematically, anodic bonding can be used, but it is not limited to this.

[0187] Schematic, the glass core 20 in the preparation step may be provided with a through-hole pad 26p, which is disposed at one or both ends of the through electrode 42 of the flat glass 22 or the first glass 23a. In this case, the formation process of the integrated electrode 46 described later can be further simplified.

[0188] The fixing step is the step of setting the bridge 70 on the cavity 24 and fixing its position. Figure 8a The following attached diagrams illustrate the concept. Figure 7a The glass core 20, but the following process can also be applied in the same way. Figure 7b 20 glass cores.

[0189] A bridge 70 is a structure that can transmit electrical signals between two or more dies. The dies may be disposed on one surface of a package substrate.

[0190] A bridging electrode 74 is provided on the bridging 70, and the bridging electrode 74 is located inside the bridging 70. In addition, the ends of the bridging electrode 74 are connected to at least two points on a surface of the bridging 70.

[0191] The bridging 70 includes: a bridging core 72 serving as a support; and a bridging electrode 74a disposed inside the bridging core 72, the bridging electrode 74a electrically connecting at least two points on a surface of the bridging 70 to each other. Both ends of the bridging electrode 74a may be exposed on the surface of the bridging core 72. Alternatively, a bridging electrode pad 74p connected to the bridging electrode 74a may be exposed on the surface of the bridging core 72.

[0192] The bridging 70 may further include a bridging through electrode 74t that passes through the bridging core 72 and is electrically connected to it. When the bridging 70 also includes the bridging through electrode 74t, conductive layers of various structures can be formed in a smaller area, thereby forming a more compact and efficient packaging substrate.

[0193] Optionally, the bridging 70 may also be provided with a bridging electrode pad 74p, which is disposed on the bridging electrode 74a and / or the bridging through electrode 74t.

[0194] Specifically, the bridging electrode 74a may further include a bridging electrode pad 74p disposed on a surface of the bridging core 72 and connected to the bridging core 72.

[0195] Specifically, the bridging through electrode 74t may further include a bridging electrode pad 74p disposed on the upper or lower part of the bridging core 72 and connected to the bridging through electrode 74t.

[0196] The bridging core 72 can be made of plate-shaped silicon or plate-shaped silicon carbide.

[0197] The bridging electrode 74a, bridging through electrode 74t, and bridging electrode pad 74p can be made of materials used in the conductive layer. Indicatively, copper or copper alloys can be used, but not limited to these.

[0198] The fixing step is the step of fixing the positions of one surface of the cavity 24 and one surface of the bridge 70 so that they remain unchanged.

[0199] The fixing is performed by fixing part 76. Fixing part 76 fixes one surface of cavity 24 and one surface of bridge 70 by physical and / or chemical means.

[0200] Schematic, the fixing step may include a process of fixing the position by means of a bonding structure. In this case, the lower part of the bridge does not form a separate adhesive layer (physical fixing, see reference). Figure 8a ).

[0201] Schematic, the fixing step may include a process of fixing the position by providing an adhesive layer (chemical fixation, see below). Figure 8b Schematic illustration: The adhesive layer can be fixed by applying adhesive to the bonding surface, setting the bridging 70, and then curing the adhesive. Schematic illustration: The adhesive layer can also be fixed by setting an adhesive layer on one surface of the bridging onto one surface of the cavity. The adhesive layer can be a silicone-based adhesive layer, an epoxy-based adhesive layer, etc., but is not limited to these.

[0202] The adhesive layer may be removed from the packaging substrate after the removal step described later. Alternatively, the adhesive layer may remain within the packaging substrate after the removal step described later.

[0203] The patterning step involves setting integrated electrodes 46 on the glass core 20 and the bridge 70. An insulating material 45 may be disposed in the space between the integrated electrodes 46.

[0204] Integrated electrode 46 is a conductive layer electrically connected to at least one of through electrode 42, bridging electrode 74a, and bridging through electrode 74t. The integrated electrode can be formed by a process in semiconductor manufacturing to form redistribution lines.

[0205] The patterning steps include the formation of the first integrated electrode 46a and the second integrated electrode 46b (see references respectively). Figure 9a and Figure 9b ).

[0206] The patterning steps include the formation of the first integrated electrode 46a, the second integrated electrode 46b, and the third integrated electrode 46c (see references respectively). Figure 9a , Figure 9b and Figure 9c ).

[0207] The first integrated electrode 46a includes a first vertical conductive layer, a first planar conductive layer, and combinations thereof, which are directly connected to the through electrode 42 or the bridging electrode 74. Furthermore, they are embedded through a first insulating material.

[0208] The second integrated electrode 46b is disposed on the first integrated electrode 46a.

[0209] The second integrated electrode 46b includes a second vertically oriented conductive layer, a second planarly oriented conductive layer, and combinations thereof connected to the conductive layer of the first integrated electrode 46a. Furthermore, they are embedded using a second insulating material.

[0210] The third integrated electrode 46c is disposed on the second integrated electrode 46b.

[0211] The third integrated electrode 46c includes a third vertical conductive layer, a third planar conductive layer, and combinations thereof connected to the conductive layer of the second integrated electrode 46b. Furthermore, they are embedded using a third insulating material.

[0212] Optionally, a fourth integrated electrode and a fifth integrated electrode may also be formed on the third integrated electrode.

[0213] Schematic, the process of forming the integrated electrodes of each layer can be carried out by forming a redistribution layer.

[0214] The glass core 20, which serves as the support for the encapsulation substrate 1, is flat glass, which is fragile. The flat glass may break at its edges or corners or crack itself due to impact, internal stress, etc.

[0215] Breakage can also occur during the fabrication of flat glass into packaging substrates. In particular, when forming redistribution layers on large-area flat glass, the repeated heating and cooling during the manufacturing process can cause stress to concentrate in the glass itself. Especially, the patterning step repeats these processes, and flat glass subjected to concentrated stress is easily damaged even by a small impact.

[0216] The inventors demonstrated through experiments that such breakage is more likely to occur when the thickness of the flat glass itself is thin. Furthermore, experiments also confirmed that glass cores with cavities are more difficult to manufacture. To address this issue, the implementation example uses a thicker flat glass core. In other words, the inventors proposed this implementation example by demonstrating that using a thicker glass core, even with a glass substrate having a cavity, can further reduce the occurrence of breakage.

[0217] Schematic, based on the thickness of the bridging 70, the thickness of the glass core 20 in the preparation step can be more than 2 times, 3 times, 4 times, 5 times, or 6 times. The thickness can be less than 15 times or less than 13 times.

[0218] Schematic, when the thickness of the bridging 70 is about 50 μm to about 70 μm, the thickness of the glass core 20 in the preparation step can be about 400 μm to about 600 μm.

[0219] The patterning step may include the process of injecting an insulating material into the glass core 20. The injection of the insulating material may also take place in the space between the cavity 24 and the bridging 70. Alternatively, the injection of the insulating material may take place in the space between the conductive layers of the integrated electrode 46.

[0220] The insulating material may be an organic-inorganic composite material such as Ajinomoto Build-up Film (ABF) or Polyimide Build-up Film, but is not limited to these. The insulating material layer may be formed by depressurized lamination of uncured or semi-cured insulating material sheets followed by curing, but is not limited to these methods.

[0221] The conductive layer can be made of copper, copper alloys, etc., but is not limited to these. Furthermore, after forming the seed layer, the conductive layer can be formed by electroplating the desired area, but is not limited to these methods.

[0222] The removal step is the step of removing the lower part of the glass core 20 (see reference). Figure 10 (The arrow indicates the direction of removal).

[0223] At this point, the lower part of the glass core 20 does not mean the upper or lower part in terms of position, but refers to a surface on the opposite side of the layer in which the integrated electrode is formed during the patterning step.

[0224] By employing a glass core 20 with a thickness greater than the height (etch depth) of the cavity, the susceptibility to damage during the fixing or patterning steps can be reduced, and the process progress can be stabilized. However, the thick glass core 20 increases the weight of the packaging substrate itself and goes against the trend of semiconductor thinning, thus requiring its thickness to be reduced. Therefore, in this implementation example, a removal step is performed.

[0225] The removal step includes etching or grinding the lower part of the glass core 20. The etching may employ the physical and / or chemical etching methods described above. Illustratively, the grinding may employ a chemical mechanical polishing (CMP) process. Grinding may also be performed during the patterning step. In the process of forming the redistribution layer, electroplating or other processes are selectively performed in a predetermined pattern shape during the formation of the insulating material layer and the conductive layer, and grinding is also performed during this process.

[0226] In one implementation example, the glass core 20 that has undergone the patterning step can be polished by flipping the upper and lower parts and using the polishing machine employed in the patterning step.

[0227] The glass core 20 ground in the manner described above is thinner than the glass core 20 in the preparation step, resulting in a relatively thin encapsulation substrate 1 with bridging 70 on the cavity 24.

[0228] The glass core 20 is divided into a portion having the cavity 24 and a portion not having the cavity 24 along the vertical direction.

[0229] The removal step removes part or all of the portion where the cavity 24 is not provided.

[0230] The removal can be applied to cases where the glass core 20 is flat glass or laminated glass.

[0231] When a portion of the part without cavity 24 is removed by the removal process, the encapsulation substrate takes the shape of a half-cavity (not shown).

[0232] When all portions of the substrate not containing the cavity 24 are removed by the aforementioned removal process, the encapsulation substrate takes on a shape with a full cavity (see reference). Figure 10 ).

[0233] The latter case can be the removal of the fixing portion 76, such as the adhesive layer, in the first shape (see reference). Figure 11a Alternatively, it could be a second shape that retains the adhesive layer and is removed in a manner that creates a full cavity (see [reference]). Figure 11b ).

[0234] Regarding the first shape, even if the fixing part 76 is removed, the cavity wall and the bridging 70 are filled and fixed by insulating material or the like, and the position of the bridging 70 can remain unchanged.

[0235] With regard to the second shape, the fixing part 76 can be held, and in this state, the position of the bridging 70 can remain unchanged.

[0236] Optionally, after the patterning step, before the removal step, or after the removal step, the method for manufacturing the package substrate may further include an insulating cap forming step.

[0237] The insulating cover forming step is the step of forming an insulating cover on the integrated electrode 46 and / or under the glass substrate 20.

[0238] If the insulating cover is disposed on the integrated electrode 46, it is referred to as the upper insulating cover 83. The insulating cover may have an opening at a predetermined position, and may also have an upper connection structure 53 (see reference) that connects to the mounted die. Figure 9d , Figure 11a , Figure 11b ).

[0239] If the insulating cover is located at the lower part of the glass substrate 20, it is called the lower insulating cover 85. The insulating cover may have an opening at a predetermined position and may also have a lower connecting structure 55. Indicatively, the lower connecting structure 55 may be a solder ball or the like, but is not limited to this (see [reference]). Figure 11a , Figure 11b ).

[0240] After the removal step, the method for manufacturing the packaging substrate may further include a bonding step.

[0241] The bonding step involves placing the die 30 on the packaging substrate 1 and electrically connecting the circuit pattern 40 and the die 30. This connection includes not only direct connections but also indirect connections via other structures. Furthermore, the circuit pattern 40 is collectively referred to as the through electrode 42, the bridging electrode 74, and the integrated electrode 46.

[0242] Two or more chips 30 include a first chip 31 and a second chip 33, and the bonding step mounts the first chip 31 and the second chip 33 at predetermined positions on the packaging substrate 1. The figures show two chips, but are not limited to this; two, three, or four chips may be disposed on the packaging substrate 1 of a single unit.

[0243] That is, the packaging substrate 1 may further include a first die 31 and a second die 33 disposed on the integrated electrode 46. The packaging substrate 1 can transmit electrical signals between the first die 31 and the second die 33 through the bridging electrode 74a with built-in bridging 70.

[0244] After the bonding step, the method for manufacturing the packaging substrate may further include a sealing step.

[0245] The sealing step involves placing a lead frame 87 on the die side of the packaging substrate 1 on which the die is mounted, and filling the space within the lead frame 87 with a sealing material 81 (see reference). Figure 12 Therefore, a packaging substrate 1 in which the position of the die on the packaging substrate is fixed and stable can be provided.

[0246] Embedded bridging packaging substrate (2) Figure 11a and Figure 11b These are conceptual diagrams illustrating an example of a packaging substrate for one implementation of the present invention, shown in cross-section. Figure 12 This is a conceptual diagram illustrating an example of a packaged substrate with a die mounted according to an embodiment of the present invention through cross-section. The following will refer to... Figures 11a to 12 The packaging substrate with embedded bridging is described in detail.

[0247] An embodiment of the embedded bridging package substrate 1 includes: a glass core 20 having a cavity 24 and a through electrode 42; a bridging 70 disposed in the cavity 24; an integrated electrode 46 disposed on a surface of the bridging 70 and a surface of the glass core 20; and an insulating material 45 disposed between the glass core 20 and the bridging 70 and between the integrated electrode 46.

[0248] The glass core 20 is a glass substrate (flat glass) having a first surface and a second surface that are opposite to each other, and is provided with a cavity 24 and a core through hole 26.

[0249] Cavity 24 is a structure (half-cavity) in which a recessed surface is formed in the glass core 20 or a structure (full-cavity) through which a portion of the flat glass is formed. In the implementation example, both are referred to as cavity 24.

[0250] The core through-hole 26 is a through-hole formed by penetrating the flat glass along the thickness direction of the glass substrate. The shape of the opening of the core through-hole 26 can be circular, but is not limited to this. The shape of the opening can be elliptical, quadrilateral, or other shapes, and multiple shapes of openings can be mixed in a single glass core.

[0251] The through-hole 26 is a through-hole that penetrates the glass substrate, and a conductive layer may be formed inside it or it may be filled with a conductive material. In this case, the through-hole 26 is referred to as the through electrode 42.

[0252] The glass core 20 is preferably made of a glass substrate used in semiconductors, such as a borosilicate glass substrate, an alkali-free glass substrate, etc., but is not limited thereto.

[0253] The integrated electrode 46 is a conductive layer electrically connected to at least one of the through electrode 42, the bridging electrode 74a, and the bridging through electrode 74t. The integrated electrode 46 is a conductive layer that is connected substantially in a vertical or horizontal direction and arranged according to a predetermined pattern.

[0254] An insulating material 45 may be disposed in the space between the integrated electrodes 46.

[0255] The integrated electrode 46 includes: a first integrated electrode 46a disposed on the glass core 20 or the bridge 70; and a second integrated electrode 46b disposed on the first integrated electrode 46a.

[0256] The first integrated electrode 46a includes a first vertical conductive layer, a first planar conductive layer, and combinations thereof. The first vertical conductive layer is directly connected to the through electrode 42 or the bridging electrode 74. The first planar conductive layer is connected to the first vertical conductive layer and has a pattern that expands along the planar direction.

[0257] The second integrated electrode 46b includes a second vertical conductive layer, a second planar conductive layer, and combinations thereof. The second vertical conductive layer is connected to the conductive layer of the first integrated electrode 46a. The second planar conductive layer is connected to the second vertical conductive layer and has a pattern that expands along the planar direction.

[0258] The integrated electrode 46 may include a third integrated electrode 46c disposed on the second integrated electrode 46b.

[0259] The third integrated electrode 46c includes a third vertical conductive layer, a third planar conductive layer, and combinations thereof. The third vertical conductive layer is connected to the conductive layer of the second integrated electrode 46b. The third planar conductive layer is connected to the third vertical conductive layer and has a pattern that expands along the planar direction.

[0260] The bridging 70 includes: a bridging core 72 serving as a support; a bridging electrode 74a disposed inside the bridging core 72, the bridging electrode 74a electrically connecting at least two points on one surface of the bridging 70 to each other, the two ends of the bridging electrode 74a being exposed on the surface of the bridging core 72; and a bridging through electrode 74t penetrating the bridging core 72 vertically and electrically connected thereto.

[0261] A bridge 70 is a structure capable of transmitting electrical signals between two or more dies. The dies are disposed on one side of the packaging substrate.

[0262] A bridging electrode 74 is provided on the bridging 70, and the bridging electrode 74 is located inside the bridging 70. In addition, the ends of the bridging electrode 74 are connected to at least two points on a surface of the bridging 70.

[0263] The bridging 70 includes: a bridging core 72 serving as a support; and a bridging electrode 74a disposed inside the bridging core 72, the bridging electrode 74a electrically connecting at least two points on a surface of the bridging 70 to each other. Both ends of the bridging electrode 74a may be exposed on the surface of the bridging core 72. Alternatively, a bridging electrode pad 74p connected to the bridging electrode 74a may be exposed on the surface of the bridging core 72.

[0264] The bridging 70 may further include a bridging through electrode 74t that passes through the bridging core 72 and is electrically connected to it. When the bridging 70 also includes the bridging through electrode 74t, conductive layers of various structures can be formed in a smaller area, thereby forming a more compact and efficient packaging substrate.

[0265] Optionally, the bridging 70 may also be provided with a bridging electrode pad 74p, which is disposed on the bridging electrode 74a and / or the bridging through electrode 74t.

[0266] Specifically, the bridging electrode 74a may further include a bridging electrode pad 74p disposed on a surface of the bridging core 72 and connected to the bridging core 72.

[0267] Specifically, the bridging through electrode 74t may further include a bridging electrode pad 74p disposed on the upper or lower part of the bridging core 72 and connected to the bridging through electrode 74t.

[0268] The bridging core 72 can be made of plate-shaped silicon (Si) or plate-shaped silicon carbide (SiC).

[0269] The bridging electrode 74a, bridging through electrode 74t, and bridging electrode pad 74p can be made of materials used in the conductive layer. Indicatively, copper or copper alloys can be used, but not limited to these.

[0270] The fixing part 76 may be provided at the lower part of the bridge 70.

[0271] The lower part of the cavity 24 may also include a fixing part 76, which may be disposed opposite to the integrated electrode 46 in such a way that the bridge 70 is placed in the middle.

[0272] The fixing part 76 may be part of the bonding structure, and may be an adhesive layer. The adhesive layer may be a silicone adhesive layer or an epoxy adhesive layer, but is not limited thereto.

[0273] An upper insulating cover 83 may be provided on the upper part of the integrated electrode 46.

[0274] The lower part of the glass core 20 may be provided with a lower insulating cover 85.

[0275] The fixing part 76 may be located between the bridge 70 and the lower insulating cover 85. Schematic, the fixing part 76 may be an adhesive layer.

[0276] The upper insulating cover 83 may have an opening, and an upper connecting structure 53 may be provided on the upper part of the opening.

[0277] The lower insulating cover 85 may have an opening, and a lower connecting structure 55 may be provided at the lower part of the opening, schematically, a solder ball may be provided.

[0278] The packaging substrate 1 may also include a first die 31 and a second die 33 disposed on the integrated electrode 46. The multiple dies are collectively referred to as dies.

[0279] To illustrate, the die can be a semiconductor device, such as a CPU, GPU, or other computing device, or a memory device.

[0280] The bridge 70 built into the packaging substrate 1 enables smooth communication between the first die 31 and the second die 33, resulting in faster response speed and lower power consumption. Furthermore, the bridge 70 is equipped with a through-hole bridging electrode 74t, thus achieving smoother signal transmission and effective integration.

[0281] The packaging substrate 1 may also be provided with a sealing layer 81 that encapsulates the first die 31 and the second die 33, and a lead frame 87 that encapsulates the sealing layer 81. The sealing layer and the lead frame may be made of sealing materials and lead frames used in packaging substrates without limitation.

[0282] The aforementioned embedded bridging packaging substrate 1 provides a glass core-based packaging substrate in which bridging 70 is applied to the cavity 24 of the glass core 20, enabling die bridging connections in a compact size. Bridging connections are achieved by utilizing the glass core, which possesses the characteristics of an insulating substrate and the advantage of being able to serve as a support for microwires. Furthermore, the brittle glass core allows for the fabrication of a thinner packaging substrate 1 with a cavity structure, resulting in high reliability.

[0283] The preferred embodiments of the present invention have been described in detail above, but the scope of the present invention is not limited thereto. Various modifications and improvements made by those skilled in the art based on the basic concepts of the present invention as defined in the following claims are also within the scope of the present invention.

Claims

1. A packaging substrate with embedded bridging, characterized in that, include: A glass core, containing a cavity and through electrodes. A bridging element is provided within the cavity. An integrated electrode is disposed on one surface of the bridging electrode and one surface of the glass core, and An insulating material is disposed between the glass core and the bridge and between the integrated electrodes; The bridging includes: As a supporting structure, the bridging core, and A bridging electrode is disposed inside the bridging core, the bridging electrode electrically connecting at least two points on the bridging surface to each other, and the two ends of the bridging electrode being exposed on the surface of the bridging core. The integrated electrode is a conductive layer electrically connected to at least one of the through electrode and the bridging electrode.

2. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The lower part of the cavity also includes a fixing part. The fixing part and the integrated electrode are arranged opposite each other in such a way that the bridging is placed in the middle.

3. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The packaging substrate includes a first die and a second die disposed on the integrated electrode. The electrical signal between the first grain and the second grain is transmitted through the bridging electrode.

4. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The integrated electrode includes: The first integrated electrode is disposed on the glass core or the bridge, and The second integrated electrode is disposed on the first integrated electrode; The first integrated electrode includes a first vertical conductive layer, a first planar conductive layer, and combinations thereof that are directly connected to the through electrode or bridging electrode; The second integrated electrode includes a second vertical conductive layer, a second planar conductive layer, and combinations thereof connected to the conductive layer of the first integrated electrode.

5. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The lower part of the glass core is provided with a lower insulating cover. The fixing part is located between the bridge and the lower insulating cover. The fixing part includes an adhesive layer.

6. The encapsulation substrate with embedded bridging according to claim 3, characterized in that, The packaging substrate is further provided with: a sealing layer that encapsulates the first die and the second die, and a lead frame that encapsulates the sealing layer.

7. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The bridging also includes bridging through electrodes running vertically through the bridging core. The integrated electrode is a conductive layer electrically connected to at least one of the through electrode, the bridging electrode, and the bridging through electrode.

8. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The bridging core comprises plate-shaped silicon or plate-shaped silicon carbide.

9. The encapsulation substrate with embedded bridging according to claim 4, characterized in that, Including a third integrated electrode disposed on the second integrated electrode, The third integrated electrode includes a third vertical conductive layer, a third planar conductive layer, and combinations thereof connected to the conductive layer of the second integrated electrode.

10. The encapsulation substrate with embedded bridging according to claim 7, characterized in that, The bridging through electrode also includes a bridging electrode pad disposed on the upper or lower part of the bridging core.

11. The encapsulation substrate with embedded bridging according to claim 1, characterized in that, The through electrode is disposed in the core through hole, which is a through hole that penetrates the glass core. The glass core is a flat glass plate with the cavity and the core through hole formed by etching.

12. A method for manufacturing a package substrate with embedded bridging, characterized in that, The manufacturing method is used to manufacture the encapsulated substrate with embedded bridging according to claim 1, the manufacturing method comprising: Preparation steps: Prepare a glass core with a cavity and a core through-hole. The fixing step involves placing the bridging element in the cavity and fixing its position. The patterning step involves setting circuit patterns on the glass core and the bridge, and The removal step involves removing the lower part of the glass core.

13. The method for manufacturing the encapsulated substrate with embedded bridging according to claim 12, characterized in that, The fixing step is a step of forming an adhesive layer between one surface of the cavity and one surface of the bridge for fixing.

14. The method for manufacturing the encapsulated substrate with embedded bridging according to claim 12, characterized in that, The glass core is divided into a first part with the cavity and a second part without the cavity along the vertical direction. The removal step is a step of removing part or all of the second part.

15. The method for manufacturing the encapsulated substrate with embedded bridging according to claim 12, characterized in that, The glass core is a laminated glass composed of a first glass and a second glass. The first glass has a cavity and a through hole. The second glass does not have a through cavity.

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