Through electrode substrate and method for manufacturing through electrode substrate

Abstract

The through electrode substrate may be provided with: a substrate including a first surface and a second surface positioned on the opposite side of the first surface, and provided with a through hole including a wall surface extending from the first surface to the second surface; a through electrode including a first end surface on the first surface and a second end surface on the second surface, and filling the through hole; and an adhesion layer between the through electrode and the wall surface of the through hole. The through electrode may also include: a first layer including a first end surface; and a second layer including a second end surface and in interface contact with the first layer. The adhesion layer may also extend along the wall surface toward the second surface such that the adhesion layer does not reach the second surface. The adhesion layer may also include a second end terminating extension toward the second face. The interface may also be located between the first surface and the second end of the adhesion layer or between the second surface and the second end of the adhesion layer in the thickness direction of the substrate.

Description

Technical Field

[0001] Embodiments of this disclosure relate to a through-electrode substrate and a method for manufacturing the through-electrode substrate. Background Technology

[0002] Through-electrode substrates are used in a variety of applications. A through-electrode substrate comprises a substrate having through holes and electrodes located within the through holes. The through holes extend from a first surface to a second surface of the substrate. Through-electrode substrates are used to electrically connect electrical components located on the first surface and electrical components located on the second surface. Through-electrode substrates are also referred to as internal inserts. In the following description, the electrode disposed inside the through hole is referred to as a through electrode.

[0003] As examples of through-hole electrodes, filled vias or conformal vias are known. A filled via includes a conductive material such as copper filled inside the via. A conformal via includes a conductive layer extending along the wall of the via. From the viewpoint of reducing electrical resistance, filled vias are preferred.

[0004] When forming filled vias through a plating process, voids are easily generated. Voids refer to pore defects that occur inside the filled via. Voids are generated when the growth rate of the plating inside the via is not properly controlled. Patent Document 1 proposes to suppress voids by configuring a seed layer on a portion of the wall of the via, rather than the entire area of ​​the wall.

[0005] Prior technology documents

[0006] Patent documents

[0007] Patent Document 1: International Publication No. 2023 / 085366 Summary of the Invention

[0008] -The problem the invention aims to solve-

[0009] In areas without a seed layer, the through electrode is connected to the wall of the through hole. The adhesion between the wall and the through electrode is less than that between the seed layer and the wall. Insufficient adhesion results in a gap between the through electrode and the wall, reducing the stability of the through electrode.

[0010] The embodiments disclosed herein were implemented with regard to the aforementioned problems, and the object is to provide a through electrode substrate in which the stability of the through electrode is improved.

[0011] -Methods for solving problems-

[0012] The embodiments of this disclosure relate to the following [1] to

[23] .

[0013] [1] A through-electrode substrate, comprising:

[0014] The substrate includes a first surface and a second surface located on the opposite side of the first surface, and is provided with a through hole including a wall surface extending from the first surface to the second surface;

[0015] A through electrode includes a first end face located on the first surface and a second end face located on the second surface, and the through hole is filled therein; and

[0016] A tight-fitting layer is located between the through electrode and the wall surface of the through hole.

[0017] The through electrode comprises: a first layer including the first end face; and a second layer including the second end face and connected to the first layer at the interface.

[0018] The bonding layer extends along the wall towards the second surface, but does not reach the second surface.

[0019] The tight-fitting layer includes a second end whose extension toward the second surface is terminated.

[0020] The interface is located in the thickness direction of the substrate between the first surface and the second end of the bonding layer, or between the second surface and the second end of the bonding layer.

[0021] [2] In the through electrode substrate described in [1], the interface may also be located in the thickness direction between the second surface and the second end of the close-fitting layer.

[0022] [3] In the through electrode substrate described in [2], the distance between the first surface in the thickness direction and the second end of the close-fitting layer may be more than 2 μm and less than 250 μm.

[0023] [4] In the through electrode substrate described in [2] or [3], the ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate may be 0.002 or more and 0.500 or less.

[0024] [5] In any of the through electrode substrates described in [2] to [4], the ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate may be 0.05 or more and 0.95 or less.

[0025] [6] In any of the through electrode substrates described in [2] to [5], it may also be that,

[0026] The distance between the first surface in the thickness direction and the second end of the close-fitting layer is more than 5 μm.

[0027] The ratio of the distance between the second surface and the interface in the thickness direction to the thickness of the substrate may also be greater than the ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate.

[0028] [7] In the through electrode substrate described in [1], the interface may also be located between the first surface and the second end of the close-fitting layer in the thickness direction.

[0029] [8] In the through electrode substrate described in [7], the distance between the first surface and the interface in the thickness direction may be more than 5 μm and less than 250 μm.

[0030] [9] In the through electrode substrate described in [7] or [8], the ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate may be 0.010 or more and 0.500 or less.

[0031]

[10] In any of the through electrode substrates described in [7] to [9], the ratio of the distance between the first surface in the thickness direction and the second end of the close-fitting layer to the thickness of the substrate may be 0.05 or more and 0.95 or less.

[0032]

[11] In any of the through electrode substrates described in [7] to

[10] , the distance between the first surface in the thickness direction and the interface may be 10 μm or more, and the ratio of the distance between the second surface in the thickness direction and the second end of the bonding layer to the thickness of the substrate may be greater than the ratio of the distance between the first surface in the thickness direction and the second end of the bonding layer to the thickness of the substrate.

[0033]

[12] In any one of the through electrode substrates in [1] to

[11] , the close-fitting layer may also include titanium, titanium compound, chromium or chromium compound.

[0034]

[13] In any one of the through electrode substrates in [1] to

[12] , the through electrode may also include copper.

[0035]

[14] In any one of the through electrode substrates in [1] to

[13] , the substrate may also include glass having a thickness of 300 μm or more and 1200 μm or less.

[0036] The through-electrode substrate described in any one of

[15] [1] to

[14] may also include at least one of a first wiring layer located on the first surface or a second wiring layer located on the second surface. The first wiring layer may also include a first conductive layer and a first insulating layer. The second wiring layer may also include a second conductive layer and a second insulating layer.

[0037]

[16]

[15] The through electrode substrate may also include a semiconductor element including a terminal electrically connected to the through electrode.

[0038]

[17] In the through electrode substrate described in

[15] , the through electrode may also include a seed layer located on the close layer, and the distance in the thickness direction between the interface and the end of the seed layer may also be less than 50 nm.

[0039]

[18] A method for manufacturing a through-electrode substrate, comprising:

[0040] The process of preparing a substrate, the substrate including a first surface and a second surface located on the opposite side of the first surface, and having a through hole including a wall surface extending from the first surface to the second surface;

[0041] The process of forming a tight-fitting layer on the wall surface; and

[0042] In the through-hole forming process, a through-electrode is formed.

[0043] The close-fitting layer extends along the wall towards the second surface, such that the layer not reaching the second surface...

[0044] The tight-fitting layer includes a second end whose extension toward the second surface is terminated.

[0045] The through-electrode forming process includes:

[0046] The process of forming a seed layer that includes at least a portion located on the close-knit layer;

[0047] A first electroplating process is performed to form a first layer covering the seed crystal layer by electroplating; and

[0048] A second electroplating process is performed to form a second layer at the interface of the first layer.

[0049] The interface is located in the thickness direction of the substrate between the first surface and the second end of the bonding layer, or between the second surface and the second end of the bonding layer.

[0050]

[19] In the manufacturing method of the through electrode substrate described in

[18] , the seed layer may also be located only on the close layer, and the interface may also be located between the first surface and the second end of the close layer in the thickness direction.

[0051]

[20] In the manufacturing method of the through electrode substrate described in

[18] , the seed layer may also be located on the close layer and the wall surface so as to cover the second end of the close layer, and the interface may also be located between the second surface and the second end of the close layer in the thickness direction.

[0052]

[21] In any of the manufacturing methods of the through electrode substrate described in

[18] to

[20] , the close-fitting layer may also be formed by chemical vapor deposition.

[0053]

[22] In any of the manufacturing methods of the through electrode substrate described in

[18] to

[21] , the close-fitting layer may also be formed by atomic layer deposition.

[0054]

[23] In any of the manufacturing methods of the through electrode substrate described in

[18] to

[22] , the seed layer may also be formed by physical film formation method.

[0055] -Invention Effects-

[0056] According to embodiments of the present disclosure, a through electrode substrate having through electrodes with suppressed voids can be provided. Attached Figure Description

[0057] Figure 1 This is a cross-sectional view showing the electrode substrate.

[0058] Figure 2A This is a cross-sectional view showing the through hole of the through electrode substrate according to the first embodiment.

[0059] Figure 2B This is a cross-sectional view showing an example of the second end of the close-knit layer.

[0060] Figure 3 This is a diagram showing the first surface of the electrode substrate.

[0061] Figure 4 This is a diagram showing the second side of the electrode substrate.

[0062] Figure 5 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0063] Figure 6 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0064] Figure 7 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0065] Figure 8 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0066] Figure 9 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0067] Figure 10 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0068] Figure 11 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0069] Figure 12 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the first embodiment.

[0070] Figure 13 This is a diagram illustrating an example of the effect of the through-electrode substrate according to the first embodiment.

[0071] Figure 14 This is a diagram showing the through-electrode substrate involved in the first comparison method.

[0072] Figure 15 This is a diagram showing the through-electrode substrate involved in the second comparison method.

[0073] Figure 16 This is a diagram showing the through-electrode substrate involved in the third comparison method.

[0074] Figure 17 This is a cross-sectional view showing a modified example of a through hole.

[0075] Figure 18 This is a cross-sectional view showing a modified example of a through hole.

[0076] Figure 19 This is a cross-sectional view showing a modified example of a through hole.

[0077] Figure 20 This is a cross-sectional view showing a modified example of a through hole.

[0078] Figure 21 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0079] Figure 22 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0080] Figure 23 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0081] Figure 24 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0082] Figure 25 This is a cross-sectional view showing an example of a through-electrode substrate with a wiring layer.

[0083] Figure 26 This is a cross-sectional view showing an example of a through-electrode substrate with a wiring layer.

[0084] Figure 27 This is a cross-sectional view showing an example of a through-electrode substrate with a wiring layer.

[0085] Figure 28 This is a diagram showing an example of a product equipped with a through-electrode substrate.

[0086] Figure 29 This is a cross-sectional view showing the through hole of the through electrode substrate according to the second embodiment.

[0087] Figure 30 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the second embodiment.

[0088] Figure 31 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the second embodiment.

[0089] Figure 32 This is a cross-sectional view showing the manufacturing process of the through electrode substrate according to the second embodiment.

[0090] Figure 33 This is a diagram used to illustrate the effect of the through-electrode substrate according to the second embodiment.

[0091] Figure 34 This is a table showing the evaluation results of Examples A1 to A10 and Comparative Example A1.

[0092] Figure 35 This is a table showing the evaluation results of Examples B1 to B10 and Comparative Example B1.

[0093] Figure 36 This is a diagram showing the observation position of the through hole in embodiment B11.

[0094] Figure 37 This is an image showing the observation results of the through hole in Example B11.

[0095] Figure 38 This is an image showing the observation results of the through hole in Example B11.

[0096] Figure 39 This is an image showing the observation results of the through hole in Example B11.

[0097] Figure 40 This is an image showing the observation results of the through hole in Example B11.

[0098] Figure 41 This is an image showing the observation results of the through electrode in Example B12.

[0099] Figure 42 This is an image showing the observation results of the through electrode in Example B12. Detailed Implementation

[0100] The structure and manufacturing method of the through electrode substrate and mounting substrate according to the first embodiment of this disclosure are described in detail with reference to the accompanying drawings. The embodiments shown below are examples of embodiments of this disclosure, and this disclosure should not be construed as limiting itself to these embodiments. The terms used in this specification to define shape or geometry and their degree, such as "parallel," "orthogonal," etc., as well as the values ​​of length, angle, etc., are not strictly limited in meaning and are interpreted to include a range of degrees to which the same function can be expected.

[0101] In this specification, when multiple upper limit values ​​and multiple lower limit values ​​can be listed for a certain parameter, the numerical range of that parameter can also be formed by combining any one of the upper limit value candidates and any one of the lower limit value candidates. For example, consider the case described as "Parameter B is, for example, above A1, or above A2, or above A3. Parameter B is, for example, below A4, or below A5, or below A6." In this case, the numerical range of parameter B can be above A1 and below A4, above A1 and below A5, above A1 and below A6, above A2 and below A4, above A2 and below A5, above A2 and below A6, above A3 and below A4, above A3 and below A5, or above A3 and below A6.

[0102] In the accompanying drawings referenced in the embodiments, the same or similar symbols are used to denote the same parts or parts having the same function, and sometimes repeated descriptions are omitted. Furthermore, the dimensional ratios in the drawings sometimes differ from the actual ratios for ease of explanation, or sometimes a part of the structure is omitted from the drawings.

[0103] (Through-electrode substrate)

[0104] Figure 1This is a cross-sectional view showing an example of a through-electrode substrate 10. The through-electrode substrate 10 includes a substrate 12 and a plurality of through electrodes 20.

[0105] (Substrate)

[0106] The substrate 12 includes a first surface 13 and a second surface 14. The second surface 14 is located on the opposite side of the first surface 13.

[0107] A plurality of through holes 15 are provided on the substrate 12, extending from the first surface 13 to the second surface 14. Each through hole 15 includes a wall surface 16 extending from the first surface 13 to the second surface 14. In the following description, the direction from the first surface 13 to the second surface 14 is also referred to as the thickness direction D3. The thickness direction D3 may also be parallel to the normal direction of the first surface 13. The direction extending from the first surface 13 is also referred to as the surface direction. Figure 1 The first direction D1 is one of the surface directions. The first direction D1 is defined as the direction in which the most through electrodes 20 are arranged.

[0108] The substrate 12 is made of an inorganic material with insulating properties. For example, the substrate 12 may include glass, quartz, sapphire, resin, silicon, silicon carbide, aluminum oxide (Al2O3), aluminum nitride (AlN), zirconium oxide (ZrO2), etc., as main components. The main component refers to a component with a content of 51% by mass or more.

[0109] When the substrate 12 includes silicon, the surfaces of the substrate 12, such as the first surface 13, the second surface 14, and the wall surface 16, can also be formed by an insulating film. The insulating film is formed, for example, by oxidizing the substrate 12, where the through-hole 15 is formed, at a high temperature.

[0110] The substrate 12 can also be rectangular when viewed from above. A rectangular substrate 12 is also called a panel. The substrate 12 can also be circular when viewed from above. A circular substrate 12 is also called a wafer. Viewing from above means observing the object along the thickness direction D3 of the first surface 13.

[0111] The thickness T0 of the substrate 12 is, for example, 100 μm or more, or 200 μm or more, or 300 μm or more. A thickness T0 of 100 μm or more can suppress the increase in warpage of the substrate 12. Therefore, it is possible to prevent the substrate 12 from becoming difficult to process during the manufacturing process, or to prevent warpage of the substrate 12 due to internal stress in the layers formed on the substrate 12. The thickness T0 of the substrate 12 is, for example, 1200 μm or less, or 1000 μm or less, or 500 μm or less. A thickness T0 of 1200 μm or less can suppress the increase in the time required for the process of forming the through-hole 15 on the substrate 12.

[0112] (Through electrode)

[0113] The through electrode 20 is located inside the through hole 15 and is a conductive component. The through electrode 20 fills the through hole 15. The through electrode 20 is a so-called filled through hole.

[0114] like Figure 1 As shown, the through electrode 20 includes a first end face 201 and a second end face 202. The first end face 201 is located on the first surface 13. The second end face 202 is located on the second surface 14. The first end face 201 may also extend on the same surface as the first surface 13. The second end face 202 may also extend on the same surface as the second surface 14.

[0115] The through hole 15 has a dimension R1 in the first surface 13. The through hole 15 has a dimension R2 in the second surface 14. Dimension R1 may be the same as dimension R2. Dimension R1 may also be different from dimension R2. For example, dimension R1 may be larger than dimension R2, or dimension R1 may be smaller than dimension R2.

[0116] Dimension R1 can be 5 μm or more, or 10 μm or more, or 20 μm or more. Dimension R1 can also be less than 100 μm, or less than 80 μm, or less than 60 μm. The numerical range of dimension R2 can be the same as that of dimension R1.

[0117] The through-hole 15 can also have a high aspect ratio. The aspect ratio is the ratio of the thickness T0 of the substrate 12 to the minimum size of the through-hole 15 in the surface direction. When the size of the through-hole 15 is uniform in the thickness direction D3, the aspect ratio is calculated based on T0 / R1. The aspect ratio is, for example, 3.0 or more, or 4.0 or more, or 5.0 or more. The aspect ratio is, for example, 25.0 or less, or 20.0 or less, or 15.0 or less. For example, the aspect ratio can also be 3.0 or more and 25.0 or less. By having an aspect ratio of 3.0 or more, it is possible to suppress the situation where the through-hole 15 is not blocked by the through electrode 20 in the first surface 13. By having an aspect ratio of 25.0 or less, it is possible to reduce the time required to form the through electrode 20 by plating.

[0118] The shape of the through hole 15 when viewed from above is not particularly limited. For example, the through hole 15 when viewed from above can be circular or not. When the through hole 15 when viewed from above is circular, the aforementioned dimensions R1 and R2 are the diameters of the through hole 15 in the first surface 13 and the through hole 15 in the second surface 14, respectively. When the through hole 15 when viewed from above is not circular, the aforementioned dimensions R1 and R2 are defined in the direction in which the size of the through hole 15 is maximized when viewed from above. For example, when the through hole 15 when viewed from above is elliptical, the aforementioned dimensions R1 and R2 are defined in the direction of the major axis of the ellipse.

[0119] The internal structure of the through hole 15 is described in detail. Figure 2A This is a cross-sectional view showing an example of a through-hole 15. The through-electrode substrate 10 has a tight-fitting layer 31 located between the through-electrode 20 and the wall surface 16. The tight-fitting layer 31 may also be attached to the wall surface 16.

[0120] like Figure 2A As shown, the through electrode 20 includes a first layer 21, a second layer 22, and a seed layer 24. The first layer 21 includes a first end face 201. The second layer 22 includes a second end face 202. The first layer 21 and the second layer 22 are stacked in the thickness direction D3. The seed layer 24 is located between the first layer 21 and the through hole 15. Figure 2A In the example shown, the seed layer 24 is located between the first layer 21 and the close-fitting layer 31. The seed layer 24 may also be connected to the close-fitting layer 31. The seed layer 24 may also be connected to the first layer 21.

[0121] As described later, the first layer 21 is formed by a first electroplating process. The second layer 22 is formed by a second electroplating process performed after the first electroplating process. The second layer 22 is in contact with the first layer 21 at an interface 23 in the thickness direction D3. The interface 23 traverses the through-hole 15. The interface 23 may also be formed by the grain boundaries of the material constituting the first layer 21.

[0122] The bonding layer 31 is described in detail below. The bonding layer 31 is a layer used to improve the adhesion between the through electrode 20 and the wall surface 16. For example, the bonding layer 31 can suppress the formation of gaps between the through electrode 20 and the wall surface 16.

[0123] On the other hand, if the adhesion between the through electrode 20 and the wall surface 16 is too high, damage such as cracks may occur in the substrate 12 due to the difference in thermal expansion coefficient between the through electrode 20 and the substrate 12. In view of this problem, in this embodiment, it is proposed to provide a tight-fitting layer 31 in a part of the wall surface 16 rather than the entire area.

[0124] exist Figure 2AIn the example shown, the adhesive layer 31 extends along the wall 16 toward the second surface 14 in the thickness direction D3, such that the adhesive layer 31 does not reach the second surface 14. For example, the adhesive layer 31 has a cylindrical shape. The adhesive layer 31 includes a first end 311 and a second end 312. The first end 311 may also be located on the first surface 13. The first end 311 may also be located away from the first surface 13 in the thickness direction D3. The second end 312 is located on the opposite side of the first end 311 in the thickness direction D3. The extension of the adhesive layer 31 from the first end 311 toward the second surface 14 terminates in the second end 312. The second end 312 is not covered by the seed layer 24 and the first layer 21.

[0125] Figure 2B This is a cross-sectional view showing an example of the second end 312 of the sealing layer 31. The second end 312 of the sealing layer 31 is the end of the sealing layer 31 that extends continuously from the first surface 13 toward the second surface 14. The portion of the sealing layer 31 that extends continuously from the first surface 13 toward the second surface 14 and terminates at the second end 312 is also referred to as the main portion. Figure 2B As shown, the sealing layer 31 may also include a portion remote from the main portion. This portion remote from the main portion is also referred to as the separation portion. The second end 312 of the sealing layer 31 is the end of the main portion.

[0126] The bonding layer 31 comprises a material that has close adhesion to the wall surface 16. For example, titanium (Ti), molybdenum (Mo), tungsten (W), tantalum (Ta), nickel (Ni), chromium (Cr), aluminum (Al), their compounds, or their alloys can be used. The compounds can also be metal oxides such as titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO2), and chromium oxide. The bonding layer 31 may also include organic materials such as silane coupling agents. If the through electrode 20 comprises copper (Cu), the bonding layer 31 may also include a material that inhibits the diffusion of Cu. For example, the bonding layer 31 may also include metal nitrides such as titanium nitride (TiN), molybdenum nitride (MoN), tantalum nitride (TaN), and chromium nitride.

[0127] The material of the bonding layer 31 can also be selected according to the material or shape of the substrate 12. For example, if the substrate 12 is a wafer, the bonding layer 31 may also include Cr or its compounds. For example, if the substrate 12 is a panel, the bonding layer 31 may also include Ti or its compounds.

[0128] The seed layer 24 is described in detail. The seed layer 24 functions as a cathode in the first electroplating process. In the first electroplating process, the material constituting the first layer 21 is first deposited on the seed layer 24. The seed layer 24 has close contact with the first layer 21. For example, the close contact between the seed layer 24 and the through electrode 20 is higher than the close contact between the wall surface 16 and the through electrode 20.

[0129] The seed layer 24 extends along the wall 16 toward the second surface 14 in the thickness direction D3, such that it does not reach the second surface 14. For example, the seed layer 24 has a cylindrical shape. The seed layer 24 includes a third end 241 and a fourth end 242. The third end 241 may also be located on the first surface 13. The third end 241 may also be located away from the first surface 13 in the thickness direction D3. The fourth end 242 is located on the opposite side of the third end 241 in the thickness direction D3. The extension of the seed layer 24 from the third end 241 toward the second surface 14 terminates at the fourth end 242.

[0130] exist Figure 2A In the example shown, the fourth end 242 of the seed layer 24 is located closer to the first surface 13 than the second end 312 of the close-knit layer 31. In other words, the fourth end 242 is located between the first surface 13 and the second end 312 in the thickness direction D3. In this case, the seed layer 24 is located only on the close-knit layer 31.

[0131] The material of the seed layer 24 is selected such that the first layer 21 can precipitate on the seed layer 24. The material of the seed layer 24 may be the same as or different from the material of the first layer 21. The seed layer 24 may, for example, comprise a metallic material such as Cu, TiCr, Ni, or gold (Au). The seed layer 24 may also comprise compounds of these metallic materials. For example, the seed layer 24 may comprise TiN. The seed layer 24 may also comprise multiple layers. For example, the seed layer 24 may comprise layers of TiN and Cu.

[0132] The first layer 21 is formed by a deposition reaction using charges supplied from the seed layer 24. In the through-hole 15, the first layer 21 covers the seed layer 24. For example, the first layer 21 extends from the first surface 13 in the thickness direction D3 to a position relative to the seed layer 24 on the side of the second surface 14.

[0133] The second layer 22 is connected to the first layer 21 in the interface 23. The second layer 22 extends in the thickness direction D3 so as to reach the second surface 14 from the interface 23.

[0134] The first layer 21 and the second layer 22 may also include metallic materials such as Cu, Au, silver (Ag), platinum (Pt), rhodium (Rh), Ni, Cr, palladium (Pd), etc. The first layer 21 and the second layer 22 may also include compounds of these metallic materials.

[0135] Interface 23 may not be flat. For example, interface 23 may include a recess 232 that is recessed toward the first surface 13. The depth K of the recess 232 may be 1.5 μm or more, or 3.0 μm or more, or 5.0 μm or more. The depth K of the recess 232 may be less than 15 μm, or less than 12 μm, or less than 10 μm. For example, the depth K of the recess 232 may also be 1.5 μm or more and less than 15 μm.

[0136] The growth of the second layer 22 is sometimes easier to advance in the center of the through-hole 15 when viewed from above than near the wall 16 of the through-hole 15. The interface 23 includes a recess 232, which helps to prevent the second layer 22 from excessively protruding from the second surface 14 in the center of the through-hole 15 when viewed from above. The depth K of the recess 232 is less than 15 μm, which helps to suppress defects such as voids from forming during the growth of the second layer 22.

[0137] Figure 3 This diagram shows the first surface 13 of the through-hole substrate 10. In the first surface 13, a close-fitting layer 31 and a seed layer 24 are disposed between the wall 16 of the through-hole 15 and the first layer 21. When the material of the seed layer 24 and the first layer 21 is the same, the boundary between the seed layer 24 and the first layer 21 is sometimes clearly visible. The through-hole 15 has a dimension R1 in the first surface 13. Dimension R1 is the maximum value of the dimension of the through-hole 15 in the first surface 13.

[0138] Figure 4 This is a diagram showing the second surface 14 of the through-hole substrate 10. In the second surface 14, no bonding layer 31 and seed layer 24 are disposed between the wall surface 16 of the through-hole 15 and the second layer 22. The through-hole 15 has a dimension R2 in the second surface 14. Dimension R2 is the maximum value of the dimension of the through-hole 15 in the second surface 14.

[0139] The position of interface 23 in the thickness direction D3 is explained. Interface 23 has an interface end 231. Interface end 231 is the outer edge of interface 23 when viewed from above. Interface end 231 is close to the fourth end 242 of seed layer 24 in the thickness direction D3. Based on the position of interface end 231, the position of the fourth end 242 of seed layer 24 can be inferred.

[0140] exist Figure 2AIn the example shown, interface 23 is located in the thickness direction D3 between the first surface 13 and the second end 312 of the bonding layer 31. The through electrode 20 is divided in the thickness direction D3 into an intermediate portion, a first portion P1, and a second portion P2 based on the interface end 231 of interface 23 and the second end 312 of the bonding layer 31. The intermediate portion is the part of the through electrode 20 located in the thickness direction D3 between the interface end 231 of interface 23 and the second end 312 of the bonding layer 31. Figure 2A As shown, the interface end 231 of interface 23 is located in the middle portion between the first surface 13 and the second end 312 of the bonding layer 31, specifically referred to as the first middle portion, and denoted by the symbol Pm1. The first portion P1 is the portion of the through electrode 20 located in the thickness direction D3 between the first surface 13 and the first middle portion Pm1. Figure 2A In the example shown, the first portion P1 is located between the interface end 231 of the first surface 13 and the interface 23. The second portion P2 is the portion of the through electrode 20 located in the thickness direction D3 between the second surface 14 and the first intermediate portion Pm1. Figure 2A In the example shown, the second part P2 is located between the second surface 14 and the second end 312 of the bonding layer 31.

[0141] In the majority of the first portion P1, a close-fitting layer 31 and a seed layer 24 are disposed between the through electrode 20 and the wall surface 16. In the first intermediate portion Pm1, a close-fitting layer 31 is disposed between the through electrode 20 and the wall surface 16. In the second portion P2, neither the close-fitting layer 31 nor the seed layer 24 is disposed between the through electrode 20 and the wall surface 16.

[0142] The adhesion of the tight layer 31 to the wall 16 is greater than that of the through electrode 20 to the wall 16. Therefore, the adhesion force between the wall 16 and the through electrode 20 in the first intermediate portion Pm1 is greater than that between the wall 16 and the through electrode 20 in the second portion P2.

[0143] The adhesion between the through electrode 20 and the seed layer 24, and the adhesion between the seed layer 24 and the adhesion layer 31, is greater than the adhesion between the through electrode 20 and the adhesion layer 31. Therefore, the adhesion force between the wall surface 16 and the through electrode 20 in the first part P1 is greater than the adhesion force between the wall surface 16 and the through electrode 20 in the first intermediate part Pm1.

[0144] The first part P1 has a high bonding force. The first part P1 can improve the stability of the through electrode 20.

[0145] The bonding force of the second portion P2 is lower than that of the first portion P1 and the first intermediate portion Pm1. Therefore, in the second portion P2, compared with the first portion P1 and the first intermediate portion Pm1, thermal stress caused by the difference in thermal expansion coefficients between the through electrode 20 and the substrate 12 is less likely to occur. Therefore, the second portion P2 can, for example, absorb the thermal stress generated in the first portion P1 to some extent. For example, the second portion P2 can disperse the thermal stress generated in the first portion P1 in the thickness direction D3 or the surface direction within the second portion P2.

[0146] The adhesion force of the first intermediate portion Pm1 is higher than that of the first portion P1, but lower than that of the second portion P2. The first intermediate portion Pm1 is located between the first portion P1 and the second portion P2 in the thickness direction D3. The first intermediate portion Pm1 can suppress abrupt changes in thermal stress between the first portion P1 and the second portion P2. As a result, damage such as cracks in the substrate 12 or the through electrode 20 can be suppressed.

[0147] The first intermediate portion Pm1 has a thickness Hm1. Thickness Hm1 is the distance between the interface end 231 of interface 23 and the second end 312 of the bonding layer 31 in the thickness direction D3. The first portion P1 has a thickness H1. Figure 2A In the example shown, thickness H1 is the distance between the first surface 13 and the interface end 231 of interface 23 in the thickness direction D3. The second part P2 has thickness H2. Figure 2A In the example shown, the thickness H2 is the distance between the second surface 14 and the second end 312 of the bonding layer 31 in the thickness direction D3.

[0148] The thickness H1 of the first part P1 is, for example, 5 μm or more, and can be 10 μm or more, 30 μm or more, 50 μm or more, or 100 μm or more. By having a thickness H1 of a specified value or more, the adhesion between the through electrode 20 and the wall surface 16 can be appropriately improved. The thickness H1 is, for example, 250 μm or less, and can be 200 μm or less, 150 μm or less, 130 μm or less, 100 μm or less, 50 μm or less, or 40 μm or less. When the thickness H1 is 250 μm or less, excessive increase in the adhesion between the through electrode 20 and the wall surface 16 can be suppressed.

[0149] The thickness H1 of the first part P1 can also be determined relative to the thickness T of the substrate 12. The ratio of thickness H1 to thickness T0, i.e., H1 / T0, is, for example, 0.005 or more, or 0.010 or more, or 0.025 or more, or 0.050 or more, or 0.075 or more, or 0.10 or more, or 0.15 or more, or 0.20 or more. H1 / T0 is, for example, 0.50 or less, or 0.40 or less, or 0.30 or less, or 0.25 or less, or 0.20 or less, or 0.15 or less, or 0.10 or less, or 0.075 or less.

[0150] The thickness H2 of the second part P2 is, for example, 50 μm or more, or 100 μm or more, or 200 μm or more, or 300 μm or more. By having a thickness H2 of 50 μm or more, the thermal stress of the through electrode 20 can be appropriately dispersed. The thickness H2 is, for example, 950 μm or less, or 500 μm or less, or 350 μm or less, or 250 μm or less, or 200 μm or less.

[0151] The thickness H2 of the second part P2 can also be determined relative to the thickness T0 of the substrate 12. The ratio of thickness H2 to thickness T0, i.e., H2 / T0, is, for example, 0.10 or more, or 0.15 or more, or 0.20 or more, or 0.40 or more, or 0.60 or more, or 0.80 or more. H2 / T0 is, for example, 0.95 or less, or 0.90 or less, or 0.85 or less, or 0.70 or less, or 0.60 or less, or 0.50 or less, or 0.40 or less, or 0.30 or less.

[0152] The thickness Hm1 of the first intermediate portion Pm1 is, for example, 30 μm or more, or 40 μm or more, or 50 μm or more, or 100 μm or more. By having a thickness Hm1 of a specified value or more, it is possible to suppress abrupt changes in thermal stress between the first portion P1 and the second portion P2. The thickness Hm1 is, for example, 250 μm or less, or 200 μm or less, or 150 μm or less, or 100 μm or less, or 50 μm or less, or 40 μm or less.

[0153] The thickness Hm1 of the first intermediate portion Pm1 can also be determined relative to the thickness T0 of the substrate 12. The ratio of thickness Hm1 to thickness T0, i.e., Hm1 / T0, is, for example, 0.030 or more, or 0.040 or more, or 0.050 or more, or 0.075 or more, or 0.10 or more, or 0.15 or more, or 0.20 or more. Hm1 / T0 is, for example, 0.50 or less, or 0.40 or less, or 0.30 or less, or 0.25 or less, or 0.20 or less, or 0.15 or less, or 0.10 or less, or 0.075 or less.

[0154] The thickness H1 of the first part P1, the thickness H2 of the second part P2, and the thickness Hm1 of the first intermediate part Pm1 can also be set to ensure the balance of the three layers. For example, the difference between the maximum and minimum values ​​of H1 / T0, H2 / T0, and Hm1 / T0 can be less than 0.40, less than 0.30, or less than 0.20.

[0155] exist Figure 2A In the diagram, the symbol H3 represents the distance in the thickness direction D3 between the ends of the first surface 13 and the second surface 14 side of the first intermediate portion Pm1. Figure 2A In the example shown, distance H3 is the distance along the thickness direction D3 between the first surface 13 and the second end 312 of the bonding layer 31. The ratio of distance H3 to the thickness T0 of the substrate 12, i.e., H3 / T0, is, for example, 0.05 or more, or 0.10 or more, or 0.15 or more, or 0.30 or more, or 0.50 or more, or 0.70 or more, or 0.75 or more, or 0.80 or more. H3 / T0 is, for example, 0.95 or less, or 0.92 or less, or 0.90 or less, or 0.80 or less, or 0.60 or less, or 0.40 or less, or 0.20 or less.

[0156] The ratio of thickness H2 to thickness T0, i.e., H2 / T0, can also be greater than the ratio of distance H3 to thickness T0, i.e., H3 / T0. In other words, the second portion P2 can also occupy more than half the space of the through hole 15 in the thickness direction D3. As described above, in the second portion P2, compared with the first portion P1 and the first intermediate portion Pm1, the thermal stress caused by the difference in thermal expansion coefficients of the through electrode 20 and the substrate 12 is less likely to be generated. By setting the thickness H1 of the first portion P1 to a predetermined value or higher, and increasing the occupancy of the second portion P2 in the through hole 15, the second portion P2 can more reliably absorb the thermal stress generated in the first portion P1.

[0157] The value obtained by subtracting H3 from H2 is denoted as ΔH23. The ratio of the difference ΔH23 to the thickness T0, i.e., ΔH23 / T0, is, for example, 0.10 or more, or 0.20 or more, or 0.25 or more, or 0.30 or more. ΔH23 / T0 is, for example, 0.90 or less, or 0.80 or less, or 0.75 or less, or 0.70 or less.

[0158] The dimensions, such as the thickness of each layer located at the through-hole 15, are calculated based on cross-sectional images of multiple through-holes 15 obtained by electron microscopy. Five through-holes 15 arranged along the first direction D1 at the location closest to the center point of the through-electrode substrate 10 in a top view are extracted as the through-holes 15 to be measured. Cross-sectional images are obtained such that the dimensions of the through-holes 15 in the first direction D1 are maximized. The dimensions of each layer are calculated by averaging the measurement results from the five through-holes 15.

[0159] (Manufacturing method of through electrode substrate)

[0160] Reference Figures 5-12 Here is an example of a manufacturing method for the through electrode substrate 10.

[0161] (Through hole formation process)

[0162] First, a substrate 12 is prepared. Next, a resist layer is formed on at least one of the first surface 13 or the second surface 14. Then, an opening is formed in the resist layer at a position corresponding to the through-hole 15. Next, the substrate 12 is processed through the opening in the resist layer. Thus, as... Figure 5 As shown, through holes 15 are formed in the substrate 12. Methods for processing the substrate 12 include dry etching and wet etching. Dry etching methods include reactive ion etching and deep reactive ion etching.

[0163] A through-hole 15 can also be formed on the substrate 12 by irradiating it with a laser. In this case, a resist layer may not be required. Excimer lasers, Nd:YAG lasers, femtosecond lasers, etc., can be used as the laser. When using an Nd:YAG laser, a fundamental wavelength of 1064 nm, a second harmonic wavelength of 532 nm, or a third harmonic wavelength of 355 nm can be used.

[0164] Alternatively, laser irradiation and wet etching can be appropriately combined. Specifically, firstly, a modified layer is formed in the area of ​​the substrate 12 where the through-hole 15 should be formed by laser irradiation. Next, the substrate 12 is immersed in hydrogen fluoride or the like, and the modified layer is etched. As a result, the through-hole 15 is formed in the substrate 12.

[0165] Alternatively, through holes 15 can be formed on substrate 12 by sandblasting, which involves blowing abrasive material onto the substrate 12.

[0166] (Seamless layer formation process)

[0167] Next, as Figure 6 As shown, a bonding layer forming process for forming a bonding layer 31 is performed. The bonding layer 31 is formed at least on the wall surface 16 of the through hole 15. The bonding layer 31 may also be formed on the first surface 13. Although not shown, the bonding layer 31 may also be formed on the second surface 14.

[0168] like Figure 6 As shown, the bonding layer 31 on the wall surface 16 is formed in the thickness direction D3 such that it does not reach the second surface 14. For example, a resist layer is formed on the portion of the wall surface 16 located between the second end 312 of the bonding layer 31 and the second surface 14. After the bonding layer formation process, the resist layer is removed. This prevents the bonding layer 31 from forming on the portion of the wall surface 16 located between the second end 312 of the bonding layer 31 and the second surface 14. Alternatively, after the bonding layer 31 is formed over the entire area of ​​the wall surface 16, a resist layer is formed on the portion of the bonding layer 31 having the desired size T11. Then, etchant is supplied from the second surface 14 side into the interior of the through hole 15. This removes the portion of the bonding layer 31 not covered by the resist layer.

[0169] The dimension T11 of the bonding layer 31 located in the through hole 15 on the thickness direction D3 is smaller than the thickness T0 of the substrate 12. The ratio of dimension T11 to the thickness T0 of the substrate 12, i.e., the value range of T11 / T0, can also be the same as the value range of H3 / T0 mentioned above.

[0170] The thickness T12 of the bonding layer 31 is, for example, 5 nm or more, or 10 nm or more, or 20 nm or more. The thickness T12 is, for example, less than 300 nm, or less than 100 nm, or less than 50 nm. The thickness T12 of the bonding layer 31 is defined at the center of the bonding layer 31 in the thickness direction D3.

[0171] The close-packed layer 31 can also be formed by physical film deposition or by chemical vapor deposition. Examples of physical film deposition methods include evaporation, sputtering, and ion plating. Examples of chemical vapor deposition methods include atomic layer deposition. The close-packed layer 31 can also be formed by chemical vapor deposition methods other than atomic layer deposition.

[0172] An example of a close-packed layer formation process is described when the close-packed layer 31 is formed by atomic layer deposition. The close-packed layer formation process includes multiple film deposition processes. A single film deposition process includes a first feed process, a first purging process, a second feed process, and a second purging process.

[0173] In the first supply process, a raw material gas comprising a first reactant is supplied to the substrate 12. The first reactant is also referred to as a precursor. The first reactant is, for example, a compound comprising a metal oxide constituting the close-packed layer 31. The first reactant may also be a compound of a metal oxide constituting the close-packed layer 31 and an organic compound.

[0174] The first reactant reacts with the surface of the substrate 12 in a self-limiting manner. For example, the reaction of the first reactant occurs only at a plurality of reactive sites on the surface of the substrate 12. Through the reaction of the first reactant, a film composed of the first reactant is formed on the surface of the substrate 12. If all the reactive sites on the surface of the substrate 12 are buried by the first reactant, the growth of the film stops.

[0175] Next, a first purging process is performed. In the first purging process, the first reactants remaining around the substrate 12 are removed. For example, a raw material gas containing the first reactants is discharged to the outside of the chamber of the film-forming apparatus used to perform the film-forming process.

[0176] Next, a second supply process is performed. In this second supply process, a raw material gas comprising a second reactant is supplied to the substrate 12. The second reactant may be oxygen molecules, water molecules, etc. The second reactant may also include reactive oxygen free radicals.

[0177] In the second supply process, oxygen is used to replace the surface ligands of the first reactant constituting the film. That is, an oxidation reaction occurs. As a result, a metal oxide film is formed on the surface of the substrate 12. If all the surface ligands are replaced by oxygen, the oxidation reaction stops.

[0178] Next, a second purging process is performed. In the second purging process, the second reactants remaining around the substrate 12 are removed. For example, a raw material gas containing the second reactants is discharged to the outside of the chamber of the film-forming apparatus used to perform the film-forming process.

[0179] The thickness of the metal oxide film formed by a single film deposition process can be, for example, less than 0.20 nm, less than 0.15 nm, or less than 0.10 nm. By controlling the number of film deposition processes, the thickness of the bonding layer 31 can be controlled.

[0180] As described above, self-regulation of the reaction is achieved during atomic layer deposition, thus obtaining a uniform and dense bonding layer 31 that suppresses defects such as pinholes. Furthermore, the reaction between the multiple reactive sites on the surface of the substrate 12 and the bonding layer 31 improves the adhesion of the bonding layer 31 to the substrate 12.

[0181] Compared to other chemical vapor deposition methods such as plasma CVD, atomic layer deposition (ALD) has the advantage of forming a close-packed layer 31 at a lower temperature. ALD also has the advantage of forming a close-packed layer 31 on the wall surface 16 of a through-hole 15 with a high aspect ratio. For example, ALD can form a close-packed layer 31 on the wall surface 16 of a through-hole 15 with an aspect ratio of 100 or higher.

[0182] (Seed crystal layer formation process)

[0183] Next, the through electrode forming process, which forms the through electrode 20 in the through hole 15, is carried out. First, as... Figure 7 As shown, a seed layer forming process for forming a seed layer 24 is performed. The seed layer 24 is formed at least on the close-fitting layer 31 located in the through hole 15. The seed layer 24 may also be formed on the first surface 13.

[0184] The seed layer 24 is formed by physical film formation methods such as evaporation, sputtering, and ion plating. Figure 7 As shown, the seed layer 24 located in the through hole 15 is formed such that it does not reach the second surface 14 in the thickness direction D3. Figure 7 In the example shown, a seed layer 24 is formed such that the fourth end 242 is located on the close layer 31.

[0185] The dimension T21 of the seed layer 24 located in the through hole 15 on the thickness direction D3 is smaller than the dimension T11 of the close-fitting layer 31. The value range of dimension T21 can also be the same as the value range of thickness H1 mentioned above. The value range of the ratio of dimension T21 to the thickness T0 of substrate 12, i.e., T21 / T0, can also be the same as the value range of H1 / T0 mentioned above.

[0186] An example of a method for adjusting the size T21 of the seed layer 24 is provided.

[0187] The case where the seed layer 24 is formed using a vapor deposition method will be explained. In the vapor deposition method, the material constituting the seed layer 24 flies toward the first surface 13. Thus, as... Figure 7 As shown, a seed layer 24 is formed extending along the wall 16 from the first surface 13 toward the second surface 14. The seed layer 24 is also formed on the first surface 13. By adjusting the time of the vapor deposition process, the angle of arrival, etc., the depth of the seed layer 24 penetrating the through hole 15 from the first surface 13, i.e., the size T21 of the seed layer 24, can be controlled.

[0188] The case where the seed layer 24 is formed using sputtering or ion plating will be described. First, the seed layer 24 is formed on the first surface 13 side by sputtering or ion plating. This forms a seed layer 24 extending from the first surface 13 toward the second surface 14 along the wall 16 inside the through-hole 15. The size of the seed layer 24 in the thickness direction D3 is larger than the desired size T21. Next, a resist layer is formed on the portion of the seed layer 24 located inside the through-hole 15 and having the desired size T21. Then, etchant is supplied into the through-hole 15 from the second surface 14 side. This removes the portion of the seed layer 24 not covered by the resist layer. Thus, a seed layer 24 having the desired size T21 is formed inside the through-hole 15.

[0189] The thickness T22 of the seed layer 24 is, for example, 5 nm or more, or 10 nm or more, or 15 nm or more, or 20 nm or more. The thickness T22 of the seed layer 24 is, for example, 50 nm or less, or 40 nm or less, or 30 nm or less. By having a thickness T22 of 5 nm or more, defects such as pinholes in the seed layer 24 can be suppressed. By having a thickness T22 of 50 nm or less, uneven thickness of the first layer 21 can be suppressed. Therefore, the formation of depressions 232 can be suppressed. The thickness T12 of the seed layer 24 is defined at the center of the first layer 21 in the thickness direction D3.

[0190] (First electroplating process)

[0191] Next, a first electroplating process is performed to form the first layer 21 by electroplating. In the first electroplating process, a first plating solution is supplied to the first surface 13. Figure 8 As shown, a first layer 21 covering the seed layer 24 is formed by electroplating. The seed layer 24 functions as a cathode. The first layer 21 is formed not only inside the through hole 15, but also on the first surface 13.

[0192] The first layer 21 includes an interface 23 located inside the through hole 15. The interface 23 may also include a recess 232 recessed toward the first surface 13.

[0193] like Figure 8As shown, the first layer 21 covers the fourth end 242 of the seed layer 24 in the thickness direction D3. The symbol ΔT21 represents the distance in the thickness direction D3 between the fourth end 242 of the seed layer 24 and the interface end 231 of the interface 23. The distance ΔT21 is, for example, less than 50 nm, less than 40 nm, or less than 30 nm. Thus, the distance ΔT21 is relatively small compared to the thickness T0 of the substrate 12. Based on the position of the interface end 231, the position of the fourth end 242 of the seed layer 24 can be inferred. The position of the interface 23 can be detected based on an image of the cross-section of the through-hole 15.

[0194] A first electroplating process is performed so that the through-hole 15 in the first surface 13 is blocked by the first layer 21. The interface 23 extends transversely through the through-hole 15.

[0195] The first plating solution may also include conductive materials such as Cu, Au, Ag, Pt, Rh, Ni, Cr, Nb, Pb, Ta, Sn, In, and Al. The concentration of the conductive material elements constituting the first layer 21 in the first plating solution is also referred to as the first concentration. Furthermore, the current supplied to the seed layer 24 in the first electrolytic plating process is also referred to as the first current.

[0196] The first plating solution may also include an agent that promotes the precipitation reaction. The first plating solution may also include an inhibitor that suppresses the precipitation reaction.

[0197] (Second electroplating process)

[0198] Next, a second electroplating process is performed to form the second layer 22 by electroplating. In the second electroplating process, a second plating solution is supplied to the second surface 14. Figures 9-11 This is a diagram showing how the second layer (22) grows.

[0199] No seed layer is provided between the first layer 21 and the second surface 14, in the close-fitting layer 31 and the wall surface 16. In this case, the second layer 22 grows from the first layer 21 toward the second surface 14 in the thickness direction D3. Therefore, compared with the case where the second layer 22 grows from the wall surface 16 toward the center of the through hole 15 in the planar direction, it is possible to suppress the generation of defects such as voids in the second layer 22. Figure 11 This is a cross-sectional view showing the state of the growth of the second layer 22 on the second surface 14.

[0200] The second plating solution, like the first plating solution, may also include conductive materials such as Cu, Au, Ag, Pt, Rh, Ni, Cr, Nb, Pb, Ta, Sn, In, and Al. The concentration of the conductive material elements constituting the second layer 22 in the second plating solution is also referred to as the second concentration. Furthermore, the current supplied to the seed layer 24 during the second electrolytic plating process is also referred to as the second current.

[0201] The second concentration can also be lower than the first concentration. This allows for the suppression of defects such as voids in the second layer 22.

[0202] The second current can also be lower than the first current. This allows for the suppression of defects such as voids in the second layer 22.

[0203] The second plating solution may also include an accelerator to promote the precipitation reaction. The concentration of the accelerator in the second plating solution may also be lower than the concentration of the accelerator in the first plating solution.

[0204] The second plating solution may also include inhibitors to suppress the precipitation reaction. The concentration of the inhibitors in the second plating solution may also be higher than the concentration of the inhibitors in the first plating solution.

[0205] (Removal process)

[0206] Next, a removal process can be performed to remove unnecessary layers. The result is as follows: Figure 12 As shown, a through electrode substrate 10 is obtained having a close-fitting layer 31, a seed layer 24, a first layer 21, and a second layer 22 located inside the through hole 15.

[0207] For example, such as Figure 12 As shown, a first removal process can also be performed to remove the first layer 21 located on the first surface 13. The first removal process can also remove the first layer 21 on the first surface 13 by chemical mechanical polishing. The first removal process can also remove the seed layer 24 on the first surface 13. The first removal process can also remove the close-fitting layer 31 on the first surface 13. Through the first removal process, a first end face 201 that extends flush with the first surface 13 can also be obtained.

[0208] For example, such as Figure 12 As shown, a second removal process can also be performed to remove the second layer 22 located on the second surface 14. The second removal process can also remove the second layer 22 on the second surface 14 by chemical mechanical polishing. Through the second removal process, a second end face 202 that extends flush with the second surface 14 can also be obtained.

[0209] Figure 13 This is a diagram illustrating an example of the effect of the through-electrode substrate 10. Figure 13In this diagram, F1, Fm, and F2 represent the thermal stress generated in the first portion P1, the thermal stress generated in the first intermediate portion Pm1, and the thermal stress generated in the second portion P2, respectively. It is desirable that the thermal stress Fm generated in the first intermediate portion Pm1 be less than the thermal stress F1 generated in the first portion P1. Similarly, it is desirable that the thermal stress F2 generated in the second portion P2 be less than the thermal stress Fm generated in the first intermediate portion Pm1. The thermal stress generated in the through electrode 20 decreases progressively along the thickness direction D3, thus suppressing damage such as cracks in the substrate 12 or the through electrode 20.

[0210] Figure 14 This is a diagram showing the through electrode substrate 10 involved in the first comparison method. Figure 14 The through electrode substrate 10 shown is disposed in the entire area of ​​the wall surface 16 with the close-fitting layer 31. Figure 13 The through electrode substrate 10 is different.

[0211] exist Figure 14 In the through-electrode substrate 10 shown, relatively large thermal stress is generated throughout the second layer 22. Therefore, the thermal stress generated in the first layer 21 may not be properly dispersed in the second layer 22. In contrast, in Figure 13 In the through electrode substrate 10 shown, the second part P2 can properly disperse the thermal stress generated in the first part P1.

[0212] Figure 15 This is a diagram showing the through electrode substrate 10 involved in the second comparison method. Figure 12 The through-electrode substrate 10 shown has the seed layer 24 disposed over the entire area of ​​the wall surface 16. Figure 13 The through electrode substrate 10 is different.

[0213] Figure 15 In the through-electrode substrate 10 shown, during the electroplating process, the through-electrode 20 is grown in the planar direction throughout the entire area of ​​the through-hole 15, from the wall surface 16 toward the center of the through-hole 15 in the planar direction. As a result, defects such as voids are easily generated in the through-electrode 20. In contrast, Figure 13 In the through electrode substrate 10 shown, the second layer 22 grows from the first layer 21 toward the second surface 14 in the thickness direction D3, thus suppressing defects such as voids in the second layer 22.

[0214] exist Figure 15 In the through-electrode substrate 10 shown, relatively large thermal stress is generated in the through-electrode 20 even in locations where the bonding layer 31 is not disposed. As a result, the thermal stress generated in the through-electrode 20 in locations where the bonding layer 31 is disposed may not be properly dispersed. In contrast, in... Figure 13In the through electrode substrate 10 shown, the second portion P2 can properly disperse the thermal stress generated in the first portion P1.

[0215] Figure 16 This is a diagram showing the through electrode substrate 10 involved in the third comparison method. Figure 16 The through-electrode substrate 10 shown is covered by the first layer 21 on both the close-fitting layer 31 and the seed layer 24. Figure 13 The through electrode substrate 10 is different.

[0216] exist Figure 16 In the through-electrode substrate 10 shown, relatively small thermal stress is generated throughout the second layer 22. As a result, the thermal stress may change drastically between the first layer 21 and the second layer 22. In contrast, in... Figure 13 In the through electrode substrate 10 shown, the first intermediate portion Pm1 can suppress rapid changes in thermal stress.

[0217] Various modifications can be made to the above-described embodiments. Modifications will be described as needed and with reference to the accompanying drawings. In the following description and the accompanying drawings used in the description, parts that can be constructed in the same way as those in the above-described embodiments are referred to by the same symbols as those used for the corresponding parts in the first embodiment, and repeated descriptions are omitted. Furthermore, descriptions of the effects obtained in the above-described embodiments will also be omitted where it is clearly known that such effects can also be obtained in the modifications.

[0218] (First variation)

[0219] Figure 17 This is a cross-sectional view showing a modified example of the through hole 15. The dimension R1 of the through hole 15 in the first surface 13 can also be smaller than the dimension R2 of the through hole 15 in the second surface 14. The dimension of the through hole 15 can also increase as it moves from the first surface 13 toward the second surface 14. Figure 17 In the example shown, the aspect ratio of the through hole 15 is calculated based on T0 / R1.

[0220] (Second variation)

[0221] Figure 18 This is a cross-sectional view showing a modified example of the through hole 15. The dimension R1 of the through hole 15 in the first surface 13 can also be larger than the dimension R2 of the through hole 15 in the second surface 14. The dimension of the through hole 15 can also decrease as it moves from the first surface 13 toward the second surface 14. Figure 18 In the example shown, the aspect ratio of the through hole 15 is calculated based on T0 / R2.

[0222] (Third variation)

[0223] Figure 19 This is a cross-sectional view showing a modified example of the through-hole 15. The through-hole 15 may also include a portion whose size varies depending on its position in the thickness direction D3. For example, the through-hole 15 may also include a portion whose size decreases as it moves from the first surface 13 toward the central position of the substrate 12 in the thickness direction D3. Furthermore, the through-hole 15 may also include a portion whose size decreases as it moves from the second surface 14 toward the central position of the substrate 12 in the thickness direction D3. In this case, the size of the through-hole 15 becomes smallest at the central portion 161 of the substrate 12 in the thickness direction D3. The "central position" refers to a position in the thickness direction D3 at which the distance from the first surface 13 to the central position is equal to the distance from the second surface 14 to the central position in the thickness direction D3. The "central portion" includes the central position of the substrate 12 in the thickness direction D3, the range extending from the central position towards the first surface 13 to 0.1 × T0, and the range extending from the central position towards the second surface 14 to 0.1 × T0. The minimum size of the through-hole 15 is represented by the symbol R3. Figure 19 In the example shown, the aspect ratio of the through hole 15 is calculated based on T0 / R3.

[0224] (Fourth variation)

[0225] Figure 20 This is a cross-sectional view showing a modified example of the through-hole 15. The through-hole 15 may also include a portion whose size increases with the central position of the substrate 12 in the thickness direction D3 from the first surface 13. Furthermore, the through-hole 15 may also include a portion whose size increases with the central position of the substrate 12 in the thickness direction D3 from the second surface 14. In this case, the size of the through-hole 15 becomes its maximum value R4 at the central portion 161 of the substrate 12 in the thickness direction D3. The minimum size of the through-hole 15 may also be the size R1 of the through-hole 15 in the first surface 13, or it may be the size R2 of the through-hole 15 in the second surface 14.

[0226] (Fifth variation)

[0227] Figure 21 This is a cross-sectional view showing a modified example of the through-electrode substrate 10. The through-electrode substrate 10 may also have a first conductive layer 41 connected to the first end face 201 of the through-electrode 20. The first conductive layer 41 may also be located on the first surface 13. The first conductive layer 41 may also form wiring extending in one direction along the surface direction. The first conductive layer 41 may also include metallic materials such as Cu, Au, Ag, Pt, Rh, Ni, Cr, and Pd. The first conductive layer 41 may also include compounds of these metallic materials.

[0228] The through-electrode substrate 10 may also include a second conductive layer 51 connected to the second end face 202 of the through-electrode 20. The second conductive layer 51 may also be located on the second face 14. The second conductive layer 51 may also form wiring extending in one direction along the face direction. The second conductive layer 51 may also include metallic materials such as Cu, Au, Ag, Pt, Rh, Ni, Cr, and Pd. The second conductive layer 51 may also include compounds of these metallic materials.

[0229] like Figure 22 As shown, the through electrode substrate 10 may also have a first insulating layer 42 that overlaps with the first conductive layer 41 in the thickness direction D3. The first insulating layer 42 may also include an opening 421 that overlaps with the first conductive layer 41. The stacked structure including the first conductive layer 41 and the first insulating layer 42 is also referred to as the first wiring layer 40. The first wiring layer 40 is located on the first surface 13.

[0230] like Figure 22 As shown, the through electrode substrate 10 may also have a second insulating layer 52 that overlaps with the second conductive layer 51 in the thickness direction D3. The second insulating layer 52 may also include an opening 521 that overlaps with the second conductive layer 51. The laminated structure including the second conductive layer 51 and the second insulating layer 52 is also referred to as the second wiring layer 50. The second wiring layer 50 is located on the second surface 14.

[0231] (Sixth variation)

[0232] Figure 23 This is a cross-sectional view showing a modified example of the through-electrode substrate 10. The first insulating layer 42 may also be located on the first surface 13. The first insulating layer 42 may also include an opening 421 that overlaps with the through-electrode 20.

[0233] The second insulating layer 52 may also be located on the second surface 14. The second insulating layer 52 may also include an opening 521 that overlaps with the through electrode 20.

[0234] like Figure 24 As shown, the first conductive layer 41 may also be located on the first insulating layer 42. The first conductive layer 41 may also include a portion located at the opening 421 of the first insulating layer 42. The portion of the first conductive layer 41 located at the opening 421 of the first insulating layer 42 may also be connected to the first end face 201 of the through electrode 20.

[0235] like Figure 24 As shown, the second conductive layer 51 may also be located on the second insulating layer 52. The second conductive layer 51 may also include a portion located at the opening 521 of the second insulating layer 52. The portion of the second conductive layer 51 located at the opening 521 of the second insulating layer 52 may also be connected to the second end face 202 of the through electrode 20.

[0236] (Seventh variation)

[0237] Figure 25 This is a cross-sectional view showing a modified example of the through-electrode substrate 10. The first wiring layer 40 may also include a plurality of first conductive layers 41 and a first insulating layer 42 stacked in the thickness direction D3. The second wiring layer 50 may also include a plurality of second conductive layers 51 and a second insulating layer 52 stacked in the thickness direction D3.

[0238] (Eighth variation)

[0239] Figure 26 This is a cross-sectional view showing a modified example of the through-electrode substrate 10. The through-electrode substrate 10 may also include at least one semiconductor element 60. The through-electrode substrate 10 may also include multiple semiconductor elements 60. The semiconductor element 60 may also be an LSI chip such as a logic IC or a memory IC. The semiconductor element 60 may also be a MEMS (Micro ElectroMechanical Systems) chip. A MEMS chip is an electronic device in which mechanical components, sensors, actuators, electronic circuits, etc., are integrated onto a single substrate.

[0240] like Figure 26 As shown, semiconductor element 60 can also be configured to face the second surface 14. Although not shown, semiconductor element 60 can also be configured to face the first surface 13. Semiconductor element 60 can also be covered by molding resin 63.

[0241] Semiconductor element 60 includes terminal 61. Terminal 61 may also be electrically connected to through electrode 20. For example, terminal 61 may also be electrically connected to through electrode 20 via bump 62 and second conductive layer 51 of second wiring layer 50.

[0242] (9th variation)

[0243] Figure 27 This is a cross-sectional view showing a modified example of the through-electrode substrate 10. The through-electrode substrate 10 may also have a plurality of bumps 72. The bumps 72 may also be located on the opposite side of the semiconductor element 60 in the thickness direction D3. For example, when the semiconductor element 60 is located on the second wiring layer 50, the bumps 72 may also be located on the first wiring layer 40. The bumps 72 may also be connected to the first conductive layer 41 of the first wiring layer 40.

[0244] Multiple bumps 72 can also form a ball grid array. A through electrode substrate 10 having multiple bumps 72 can also form a semiconductor package. A semiconductor package formed by the through electrode substrate 10 can also be mounted on a motherboard 80 via multiple bumps 72.

[0245] (Tenth variation)

[0246] Figure 28 This diagram illustrates an example of a product capable of incorporating the through-electrode substrate 10 according to embodiments of this disclosure. The through-electrode substrate 10 according to embodiments of this disclosure can be used in a wide variety of products. For example, it can be incorporated into a notebook computer 110, a tablet computer 120, a mobile phone 130, a smartphone 140, a digital camcorder 150, a digital camera 160, a digital clock 170, a server 180, etc.

[0247] Although several variations of the first embodiment have been described, it is of course possible to appropriately combine and apply multiple variations to the first embodiment.

[0248] (Second Implementation)

[0249] Reference Figures 29-33 The second embodiment of this disclosure will be described below. Repetitive descriptions will be omitted regarding structural elements of the second embodiment that can be constructed in the same manner as those of the first embodiment. Repetitive descriptions will also be omitted where it is clearly known that the effects obtained in the first embodiment can also be obtained in the second embodiment.

[0250] Figure 29 This is a cross-sectional view showing an example of the through hole 15. Similarly to the first embodiment, the sealing layer 31 extends along the wall surface 16 toward the second surface 14 in the thickness direction D3, so as not to reach the second surface 14. Similarly to the first embodiment, the seed layer 24 extends along the wall surface 16 toward the second surface 14 in the thickness direction D3, so as not to reach the second surface 14.

[0251] Unlike the first embodiment, the seed layer 24 of the through electrode 20 is located closer to the second surface 14 than the second end 312 of the close-fitting layer 31. In other words, the fourth end 242 is located between the second surface 14 and the second end 312 in the thickness direction D3. The seed layer 24 covers the second end 312 of the close-fitting layer 31.

[0252] The interface 23 between the first layer 21 and the second layer 22 is located in the thickness direction D3 between the second surface 14 and the second end 312 of the bonding layer 31. The through electrode 20 is divided in the thickness direction D3 into a second intermediate portion Pm2, a first portion P1, and a second portion P2 based on the interface end 231 of the interface 23 and the second end 312 of the bonding layer 31. Similarly, the second intermediate portion Pm2 and the first intermediate portion Pm1 are portions of the through electrode 20 located in the thickness direction D3 between the interface end 231 of the interface 23 and the second end 312 of the bonding layer 31. The first portion P1 is the portion of the through electrode 20 located in the thickness direction D3 between the first surface 13 and the second intermediate portion Pm2. Figure 29 In the example shown, the first portion P1 is located between the first surface 13 and the second end 312 of the bonding layer 31. The second portion P2 is the portion of the through electrode 20 located in the thickness direction D3 between the second surface 14 and the second intermediate portion Pm2. Figure 29 In the example shown, the second part P2 is located between the second surface 14 and the interface end 231 of the interface 23.

[0253] In the first part P1, a close-fitting layer 31 and a seed layer 24 are disposed between the through electrode 20 and the wall surface 16. In most of the second intermediate part Pm2, a seed layer 24 is disposed between the through electrode 20 and the wall surface 16. In the second part P2, neither the close-fitting layer 31 nor the seed layer 24 is disposed between the through electrode 20 and the wall surface 16.

[0254] The adhesion between the through electrode 20 and the seed layer 24 is greater than that between the through electrode 20 and the wall surface 16. Therefore, the adhesion between the wall surface 16 and the through electrode 20 in the second intermediate portion Pm2 is greater than that between the wall surface 16 and the through electrode 20 in the second portion P2.

[0255] The adhesion of the bonding layer 31 to the wall 16 is higher than that of the seed layer 24 to the wall 16. Therefore, the adhesion force between the wall 16 and the through electrode 20 in the first part P1 is higher than the adhesion force A between the wall 16 and the through electrode 20 in the second intermediate part Pm2.

[0256] The second intermediate portion Pm2 has a thickness Hm2. Thickness Hm2 is the distance between the interface end 231 of interface 23 and the second end 312 of the bonding layer 31 in the thickness direction D3. The first portion P1 has a thickness H1. Figure 29 In the example shown, thickness H1 is the distance between the first surface 13 and the second end 312 of the bonding layer 31 in the thickness direction D3. The second portion P2 has thickness H2. Figure 29 In the example shown, the thickness H2 is the distance between the second surface 14 and the interface end 231 of the interface 23 in the thickness direction D3.

[0257] The thickness H1 of the first part P1 can be, for example, 2 μm or more, or 5 μm or more, or 10 μm or more, or 30 μm or more, or 50 μm or more, or 100 μm or more. By having a thickness H1 of a specified value or more, the adhesion between the through electrode 20 and the wall surface 16 can be appropriately improved. The thickness H1 can be, for example, 250 μm or less, or 200 μm or less, or 150 μm or less, or 130 μm or less, or 100 μm or less, or 50 μm or less, or 40 μm or less. By having a thickness H1 of 250 μm or less, excessive increase in the adhesion between the through electrode 20 and the wall surface 16 can be suppressed.

[0258] The thickness H1 of the first part P1 can also be determined relative to the thickness T0 of the substrate 12. The ratio of thickness H1 to thickness T0, i.e., H1 / T0, can be, for example, 0.005 or more, 0.010 or more, 0.025 or more, 0.050 or more, 0.075 or more, 0.10 or more, 0.15 or more, or 0.20 or more. H1 / T0 can be, for example, 0.50 or less, 0.40 or less, 0.30 or less, 0.25 or less, 0.20 or less, 0.15 or less, 0.10 or less, or 0.075 or less.

[0259] The thickness H2 of the second part P2 can be, for example, 50 μm or more, or 100 μm or more, or 200 μm or more, or 300 μm or more. By having a thickness H2 of 50 μm or more, the thermal stress of the through electrode 20 can be appropriately dispersed. The thickness H2 can be, for example, 995 μm or less, or 950 μm or less, or 500 μm or less, or 350 μm or less, or 250 μm or less, or 200 μm or less.

[0260] The thickness H2 of the second part P2 can also be determined relative to the thickness T0 of the substrate 12. The ratio of thickness H2 to thickness T0, i.e., H2 / T0, can be, for example, 0.10 or more, or 0.15 or more, or 0.20 or more, or 0.40 or more, or 0.60 or more, or 0.75 or more. H2 / T0 can be, for example, 0.995 or less, or 0.99 or less, or 0.95 or less, or 0.85 or less, or 0.70 or less, or 0.60 or less, or 0.50 or less, or 0.40 or less, or 0.30 or less.

[0261] The thickness Hm2 of the second intermediate portion Pm2 can be, for example, 3 μm or more, or 5 μm or more, or 10 μm or more, or 20 μm or more, or 50 μm or more, or 100 μm or more. By ensuring that the thickness Hm2 is at or above a specified value, abrupt changes in thermal stress between the first portion P1 and the second portion P2 can be suppressed. The thickness Hm2 can be, for example, 250 μm or less, or 200 μm or less, or 150 μm or less, or 100 μm or less, or 50 μm or less, or 40 μm or less.

[0262] The thickness Hm2 of the second intermediate portion Pm2 can also be determined relative to the thickness T0 of the substrate 12. The ratio of thickness Hm2 to thickness T0, i.e., Hm2 / T0, can be, for example, 0.003 or more, 0.005 or more, 0.010 or more, 0.020 or more, 0.050 or more, 0.075 or more, 0.10 or more, 0.15 or more, or 0.20 or more. Hm2 / T0 can be, for example, 0.50 or less, 0.40 or less, or 0.30 or less.

[0263] The thickness H1 of the first part P1, the thickness H2 of the second part P2, and the thickness Hm2 of the second intermediate part Pm2 can also be set to ensure the balance of the three layers. For example, the difference between the maximum and minimum values ​​of H1 / T0, H2 / T0, and Hm2 / T0 can be less than 0.40, less than 0.30, or less than 0.20.

[0264] exist Figure 29 In the diagram, the symbol H4 represents the distance in the thickness direction D3 between the ends of the first surface 13 and the second surface 14 of the second intermediate portion Pm2. Figure 29 In the example shown, distance H4 is the distance between the interface end 231 of the first surface 13 and the interface 23 in the thickness direction D3. The ratio of distance H4 to the thickness T0 of the substrate 12, i.e., H4 / T0, is, for example, 0.005 or more, or 0.01 or more, or 0.02 or more, or 0.05 or more, or 0.10 or more, or 0.15 or more, or 0.30 or more, or 0.50 or more, or 0.70 or more, or 0.75 or more, or 0.80 or more. H4 / T0 is, for example, 0.95 or less, or 0.92 or less, or 0.90 or less, or 0.80 or less, or 0.60 or less, or 0.40 or less, or 0.25 or less, or 0.15 or less.

[0265] The ratio of thickness H2 to thickness T0, i.e., H2 / T0, can also be greater than the ratio of distance H4 to thickness T0, i.e., H4 / T0. In other words, the second portion P2 can also occupy more than half the space of the through hole 15 in the thickness direction D3. In the second portion P2, compared with the first portion P1 and the second intermediate portion Pm2, it is less likely to generate thermal stress caused by the difference in thermal expansion coefficients of the through electrode 20 and the substrate 12. By setting the thickness H1 of the first portion P1 to a predetermined value or higher, and increasing the occupancy of the second portion P2 in the through hole 15, the second portion P2 can more reliably absorb the thermal stress generated in the first portion P1.

[0266] The value obtained by subtracting H4 from H2 is denoted as ΔH24. The ratio of the difference ΔH23 to the thickness T0 is ΔH24 / T0, which can be, for example, 0.10 or more, or 0.20 or more, or 0.25 or more, or 0.30 or more, or 0.50 or more. ΔH24 / T0 can be, for example, less than 0.99, or less than 0.98, or less than 0.95, or less than 0.90, or less than 0.80, or less than 0.75, or less than 0.70.

[0267] (Manufacturing method of through electrode substrate)

[0268] Reference Figures 30-32 Here is an example of a manufacturing method for the through electrode substrate 10.

[0269] Similar to the first embodiment, a substrate 12 with a through hole 15 is prepared. Next, as in... Figure 30 As shown, the bonding layer formation process for forming the bonding layer 31 is performed. The dimension T11 of the bonding layer 31 located in the through hole 15 in the thickness direction D3 is smaller than the thickness T0 of the substrate 12. The numerical range of dimension T11 can also be the same as the numerical range of H1 mentioned above. The numerical range of the ratio of dimension T11 to the thickness T0 of the substrate 12, i.e., T11 / T0, can also be the same as the numerical range of H1 / T0 mentioned above.

[0270] (Seed crystal layer formation process)

[0271] Next, as Figure 31 As shown, a seed layer formation process for forming a seed layer 24 is performed. The seed layer 24 is formed on the bonding layer 31 and the wall surface 16 to cover the second end 312 of the bonding layer 31. The dimension T21 of the seed layer 24 located in the through hole 15 in the thickness direction D3 is larger than the dimension T11 of the bonding layer 31. The numerical range of the ratio of dimension T21 to the thickness T0 of the substrate 12, i.e., T21 / T0, can also be the same as the numerical range of H4 / T0 mentioned above.

[0272] (First electroplating process)

[0273] Next, as Figure 32 As shown, a first electroplating process is performed to form the first layer 21 by electroplating. The first layer 21 covering the seed layer 24 is formed by electroplating.

[0274] Next, as in the first embodiment, a second electroplating process and a removal process are performed. As a result, a through electrode substrate 10 is obtained having a close-fitting layer 31, a seed layer 24, a first layer 21, and a second layer 22 located inside the through hole 15.

[0275] Figure 33 This is a diagram illustrating an example of the effect of the through-electrode substrate 10. Figure 33 In this diagram, F1, Fm, and F2 represent the thermal stress generated in the first portion P1, the thermal stress generated in the second intermediate portion Pm2, and the thermal stress generated in the second portion P2, respectively. It is desirable that the thermal stress Fm generated in the second intermediate portion Pm2 be less than the thermal stress F1 generated in the first portion P1. Similarly, it is desirable that the thermal stress F2 generated in the second portion P2 be less than the thermal stress Fm generated in the second intermediate portion Pm2. The thermal stress generated in the through electrode 20 decreases progressively along the thickness direction D3, thus suppressing damage such as cracks in the substrate 12 or the through electrode 20.

[0276] The first to tenth modifications described above in the first embodiment can also be applied to the second embodiment. Multiple modifications can also be appropriately combined and applied to the second embodiment.

[0277] [Example]

[0278] The embodiments of this disclosure will now be described in more detail with reference to examples, but the embodiments of this disclosure are not limited to the description of the following examples as long as they do not exceed its spirit.

[0279] (Example A1)

[0280] A glass substrate with a thickness T0 of 400 μm was prepared as substrate 12. Next, a substrate was formed on substrate 12. Figure 2A The through hole 15 is shown. The size of the through hole 15 in the first direction D1 is 70 μm.

[0281] Next, the tight-fitting layer 31 and the through electrode 20 as described in the first embodiment are formed in the through hole 15. As a result, the through electrode substrate 10 is obtained. The through electrode 20 includes a first portion P1, a second portion P2, and a first intermediate portion Pm1. The interface 23 between the first layer 21 and the second layer 22 is located between the first surface 13 and the second end 312 of the tight-fitting layer 31 in the thickness direction D3.

[0282] The thickness H1 of the first part P1 is 5 μm. The thickness Hm1 of the first intermediate part Pm1 is 45 μm. The distance H3 in the thickness direction D3 between the first surface 13 and the second end 312 of the bonding layer 31 is 50 μm. The thickness H2 of the second part P2 is 350 μm.

[0283] The reliability of the through electrode substrate 10 was evaluated.

[0284] In the reliability evaluation, the through-electrode substrate 10 was subjected to 1000 thermal cycles, and its appearance was observed. Specifically, it was checked whether the through-electrode 20 of the through-electrode substrate 10 had defects such as cracks or gaps. If defects such as cracks or gaps appeared, the through-electrode substrate 10 was judged as "NoGood". If no defects such as cracks or gaps appeared, the through-electrode substrate 10 was further subjected to 1000 thermal cycles, and its appearance was observed. If defects such as cracks or gaps appeared after a total of 2000 thermal cycles, the through-electrode substrate 10 was judged as "Good". If no defects such as cracks or gaps appeared after a total of 2000 thermal cycles, the through-electrode substrate 10 was judged as "Excellent".

[0285] One thermal cycle includes a heating process, a high-temperature holding process, a cooling process, and a low-temperature holding process. The heating process involves changing the ambient temperature around the through-electrode substrate 10 from -55°C to +125°C over 30 minutes. The high-temperature holding process involves maintaining the ambient temperature around the through-electrode substrate 10 at +125°C for 30 minutes. The heating process involves changing the ambient temperature around the through-electrode substrate 10 from +125°C to -55°C over 30 minutes. The low-temperature holding process involves maintaining the ambient temperature around the through-electrode substrate 10 at -55°C for 30 minutes.

[0286] In the through-electrode substrate 10 of Example A1, although no defects were generated after 1000 thermal cycles, defects were generated after 2000 thermal cycles. The through-electrode substrate 10 of Example A1 was judged as "Good".

[0287] (Examples A2 to A10)

[0288] By changing at least one of the thickness H1 of the first portion P1, the thickness Hm1 of the first intermediate portion Pm1, the thickness H2 of the second portion P2, and the thickness T0 of the substrate 12 from the values ​​in Example A1, a through-electrode substrate 10 was fabricated. Next, the reliability of the through-electrode substrate 10 was evaluated in the same manner as in Example A1. The results are shown below. Figure 34 .

[0289] (Comparative Example A1)

[0290] A through-hole 20 was formed in the through-hole 15 without a bonding layer 31. In Comparative Example A1, the size of the seed layer 24 in the thickness direction D3 was measured as distance H3. Next, the reliability of the through-hole electrode substrate 10 was evaluated in the same manner as in Example A1.

[0291] In the through-electrode substrate 10 of Comparative Example A1, after 1000 thermal cycles, a gap was formed between the wall 16 of the through-hole 15 and the through-electrode 20. The through-electrode substrate 10 of Comparative Example A1 was judged to be "No Good".

[0292] like Figure 34 As shown, the through electrode 20 includes a first portion P1, a second portion P2, and a first intermediate portion Pm1, thereby suppressing defects such as cracks and gaps. In particular, as shown in embodiments A2 to A4 and A7 to A9, when the thickness H1 of the first portion P1 is 10 μm or more and H2 / T0 is greater than H3 / T0, the through electrode substrate 10 can withstand 2000 thermal cycles.

[0293] (Example B1)

[0294] A glass substrate with a thickness T0 of 400 μm was prepared as substrate 12. Next, a substrate was formed on substrate 12. Figure 29 The through hole 15 is shown. The size of the through hole 15 in the first direction D1 is 70 μm.

[0295] Next, the tight-fitting layer 31 and the through electrode 20 as described in the second embodiment are formed in the through hole 15. As a result, a through electrode substrate 10 is obtained. The through electrode 20 includes a first portion P1, a second portion P2, and a second intermediate portion Pm2. The interface 23 between the first layer 21 and the second layer 22 is located between the second surface 14 and the second end 312 of the tight-fitting layer 31 in the thickness direction D3.

[0296] The thickness H1 of the first part P1 is 2 μm. The thickness Hm2 of the second intermediate part Pm2 is 3 μm. The distance H4 in the thickness direction D3 between the interface end 231 of the first surface 13 and the interface 23 is 5 μm. The thickness H2 of the second part P2 is 395 μm.

[0297] Next, the reliability of the through-electrode substrate 10 was evaluated in the same manner as in Example A1. In the through-electrode substrate 10 of Example B1, although no defects occurred after 1000 thermal cycles, defects occurred after 2000 thermal cycles. The through-electrode substrate 10 of Example B1 was judged to be "Good".

[0298] (Examples B2-B10)

[0299] At least one of the following thicknesses—H1 of the first portion P1, Hm2 of the second intermediate portion Pm2, H2 of the second portion P2, and T0 of the substrate 12—was changed from the values ​​in Example B1 to fabricate a through-electrode substrate 10. Next, the reliability of the through-electrode substrate 10 was evaluated in the same manner as in Example A1. The results are shown below. Figure 35 .

[0300] (Comparative Example B1)

[0301] A through electrode 20 was formed in the through hole 15 without a bonding layer 31. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example A1.

[0302] In the through-electrode substrate 10 of Comparative Example B1, after 1000 thermal cycles, a gap was formed between the wall 16 of the through-hole 15 and the through-electrode 20. The through-electrode substrate 10 of Comparative Example B1 was judged to be "No Good".

[0303] like Figure 35 As shown, the through electrode 20 includes a first portion P1, a second portion P2, and a second intermediate portion Pm2, thereby suppressing defects such as cracks and gaps. In particular, as shown in embodiments B2 to B4 and B7 to B9, when the thickness H1 of the first portion P1 is 5 μm or more and H2 / T0 is greater than H4 / T0, the through electrode substrate 10 can withstand 2000 thermal cycles.

[0304] (Example B11)

[0305] Similar to Example B1, after the through-hole 15 is formed on the substrate 12, the tight-fitting layer 31 and the seed layer 24 shown in the second embodiment are formed in the through-hole 15. Next, the tight-fitting layer 31 and the seed layer 24 of the through-hole 15 are observed using an electron microscope. Figure 36 It is a cross-sectional view indicating the observation position.

[0306] Figure 37This image shows the result of observing the close-packed layer 31 and the seed layer 24 near the first surface 13. The observation conditions are as follows.

[0307] • Observation apparatus: H-9500 transmission electron microscope

[0308] • Multiplier: 100,000x

[0309] • Accelerating voltage: 200kV

[0310] like Figure 37 As shown, a close-packed layer 31 is formed on the wall surface 16 near the first surface 13, and a seed layer 24 is formed on the close-packed layer 31. The close-packed layer 31 extends continuously from the first surface 13 in the thickness direction D3 to a distance Y1 (see reference). Figure 36 The distance from Y1 to the position is 15.4 μm.

[0311] Figure 38 This indicates that in the thickness direction D3, at a distance Y2 from the first surface 13 (refer to...). Figure 36 The image is obtained by observing the through hole 15 with the location of Y2 as the center. The distance Y2 is 26.2 μm. The observation conditions are as follows.

[0312] • Observation apparatus: JSM-7800F Schottky field emission scanning electron microscope

[0313] • Multiplier: 5000x

[0314] • Accelerating voltage: 5kV

[0315] Figure 39 It means in Figure 38 The image shows the result obtained by observing the through-hole 15 through the quadrilateral area labeled "PhotoA-6". The observation conditions are as follows.

[0316] • Observation apparatus: JSM-7800F Schottky field emission scanning electron microscope

[0317] • Multiplier: 20000x

[0318] • Accelerating voltage: 5kV

[0319] like Figure 39 As shown, a seed layer 24 is formed on the wall surface 16 at a position 26.2 μm away from the first surface 13 in the thickness direction D3. The close-packed layer 31 was not observed.

[0320] Figure 40 This indicates that in the thickness direction D3, at a distance Y3 from the first surface of 13 (refer to...). Figure 36The image is obtained by observing the through hole 15 with the location Y3 as the center. The distance Y3 is 155 μm. The observation conditions are as follows.

[0321] • Observation apparatus: JSM-7800F Schottky field emission scanning electron microscope

[0322] • Multiplier: 5000x

[0323] • Accelerating voltage: 5kV

[0324] like Figure 40 As shown, at a position 155 μm away from the first surface 13 in the thickness direction D3, the close-packed layer 31 and the seed layer 24 were not observed.

[0325] (Example B12)

[0326] Similar to Example B1, after the through-hole 15 was formed on the substrate 12, the tight-fitting layer 31 and the through electrode 20 as described in the second embodiment were formed in the through-hole 15. Next, the through electrode 20 was observed using an electron microscope. The observation conditions are as follows.

[0327] • Observation apparatus: JSM-7800F Schottky field emission scanning electron microscope

[0328] • Measurement area: 90μm × 500μm

[0329] • Measurement procedure: 0.6μm

[0330] • Sample tilt: 70°

[0331] • Accelerating voltage: 20kV

[0332] Figure 41 It is an image representing an inverse pole figure plot drawn based on observations. Figure 42 Is Figure 41 The image has been enhanced with lines and symbols representing the interface 23 between the first layer 21 and the second layer 22.

[0333] -Symbol Explanation-

[0334] 10 Through-electrode substrate

[0335] 12 substrate

[0336] 13 First page

[0337] 14 Second page

[0338] 15 Through holes

[0339] 16 wall

[0340] 20 Through-electrode

[0341] 201 First end face

[0342] 202 Second end face

[0343] 21 First Floor

[0344] 22 Second Floor

[0345] 23 Interface

[0346] 231 Interface

[0347] 232 Depression

[0348] 24 Seed Crystal Layer

[0349] 241 Third End

[0350] 242 Fourth End

[0351] 31. Close-knit layer

[0352] 311 First End

[0353] 312 Second End

[0354] 40 First wiring layer

[0355] 41 First conductive layer

[0356] 42 First Insulation Layer

[0357] 50 Second wiring layer

[0358] 51 Second conductive layer

[0359] 52 Second Insulation Layer

[0360] 60 Semiconductor Components

[0361] 61 terminal

[0362] 62 bumps

[0363] 72 bumps

[0364] 80 motherboard

[0365] P1 Part 1

[0366] Part 2, Page 2

[0367] Pm1 First Middle Section

[0368] Pm2, the second middle part.

Claims

1. A through-electrode substrate, comprising: The substrate includes a first surface and a second surface located on the opposite side of the first surface, and is provided with a through hole including a wall surface extending from the first surface to the second surface; A through electrode includes a first end face located on the first surface and a second end face located on the second surface, and the through hole is filled therein; and A tight-fitting layer is located between the through electrode and the wall surface of the through hole. The through electrode includes: A first layer including the first end face; and a second layer including the second end face and connected to the first layer at the interface. The bonding layer extends along the wall towards the second surface, but does not reach the second surface. The tight-fitting layer includes a second end whose extension toward the second surface is terminated. The interface is located in the thickness direction of the substrate between the first surface and the second end of the bonding layer, or between the second surface and the second end of the bonding layer.

2. The through-electrode substrate according to claim 1, wherein, The interface is located in the thickness direction between the second surface and the second end of the bonding layer.

3. The through-electrode substrate according to claim 2, wherein, The distance between the first surface in the thickness direction and the second end of the close-fitting layer is more than 2 μm and less than 250 μm.

4. The through-electrode substrate according to claim 2, wherein, The ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate is greater than or equal to 0.002 and less than or equal to 0.

500.

5. The through-electrode substrate according to claim 2, wherein, The ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate is 0.05 or more and 0.95 or less.

6. The through-electrode substrate according to claim 2, wherein, The distance between the first surface in the thickness direction and the second end of the close-fitting layer is more than 5 μm. The ratio of the distance between the second surface and the interface in the thickness direction to the thickness of the substrate is greater than the ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate.

7. The through-electrode substrate according to claim 1, wherein, The interface is located in the thickness direction between the first surface and the second end of the bonding layer.

8. The through-electrode substrate according to claim 7, wherein, The distance between the first surface and the interface in the thickness direction is more than 5 μm and less than 250 μm.

9. The through-electrode substrate according to claim 7, wherein, The ratio of the distance between the first surface and the interface in the thickness direction to the thickness of the substrate is greater than or equal to 0.010 and less than or equal to 0.

500.

10. The through-electrode substrate according to claim 7, wherein, The ratio of the distance between the first surface in the thickness direction and the second end of the bonding layer to the thickness of the substrate is 0.05 or more and 0.95 or less.

11. The through-electrode substrate according to claim 7, wherein, The distance between the first surface and the interface in the thickness direction is greater than 10 μm. The ratio of the distance between the second surface in the thickness direction and the second end of the bonding layer to the thickness of the substrate is greater than the ratio of the distance between the first surface in the thickness direction and the second end of the bonding layer to the thickness of the substrate.

12. The through-electrode substrate according to any one of claims 1 to 11, wherein, The bonding layer includes titanium, titanium compounds, chromium, or chromium compounds.

13. The through-electrode substrate according to claim 12, wherein, The through electrode comprises copper.

14. The through-electrode substrate according to any one of claims 1 to 11, wherein, The substrate comprises glass and has a thickness of 300 μm or more and 1200 μm or less.

15. The through-electrode substrate according to any one of claims 1 to 11, wherein, It has at least one of a first wiring layer located on the first surface or a second wiring layer located on the second surface. The first wiring layer includes a first conductive layer and a first insulating layer. The second wiring layer includes a second conductive layer and a second insulating layer.

16. The through-electrode substrate according to claim 15, wherein, It has a semiconductor element including terminals electrically connected to the through electrode.

17. The through-electrode substrate according to any one of claims 1 to 11, wherein, The through electrode includes a seed crystal layer located on the close-fitting layer. The distance in the thickness direction between the interface and the end of the seed crystal layer is less than 50 nm.

18. A method for manufacturing a through-electrode substrate, comprising: The process of preparing a substrate, the substrate including a first surface and a second surface located on the opposite side of the first surface, and having a through hole including a wall surface extending from the first surface to the second surface; The process of forming a tight-fitting layer on the wall surface; and In the through-hole forming process, a through-electrode is formed. The bonding layer extends along the wall towards the second surface, but does not reach the second surface. The tight-fitting layer includes a second end whose extension toward the second surface is terminated. The through-electrode forming process includes: The process of forming a seed layer that includes at least a portion located on the close-knit layer; A first electroplating process is performed to form a first layer covering the seed crystal layer by electroplating; and A second electroplating process is performed to form a second layer at the interface of the first layer. The interface is located in the thickness direction of the substrate between the first surface and the second end of the bonding layer, or between the second surface and the second end of the bonding layer.

19. The method for manufacturing a through-electrode substrate according to claim 18, wherein, The seed crystal layer is located on the close-knit layer and on the wall surface, such that it covers the second end of the close-knit layer. The interface is located in the thickness direction between the second surface and the second end of the bonding layer.

20. The method for manufacturing a through-electrode substrate according to claim 18, wherein, The seed crystal layer is located only on the close-knit layer. The interface is located in the thickness direction between the first surface and the second end of the bonding layer.

21. The method for manufacturing a through-electrode substrate according to any one of claims 18 to 20, wherein, The close-packed layer is formed by chemical vapor deposition.

22. The method for manufacturing a through-electrode substrate according to claim 21, wherein, The close-packed layer is formed by atomic layer deposition.

23. The method for manufacturing a through-electrode substrate according to any one of claims 18 to 20, wherein, The seed crystal layer is formed by a physical film formation method.

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