Grating filter, chip module and computer equipment

Abstract

The embodiment of the invention provides a grating filter, a chip module and computer equipment, which are used for reducing the alignment precision requirement between a CMOS (Complementary Metal Oxide Semiconductor) chip and normal-temperature equipment. The grating filter provided by the embodiment of the invention comprises at least one metal layer. The metal layer comprises a plurality of first rectangular structures periodically arranged in the first direction and a plurality of second rectangular structures periodically arranged in the second direction, and the first direction is perpendicular to the second direction. In the multiple first rectangular structures and the multiple second rectangular structures, the adjacent first rectangular structures and the adjacent second rectangular structures form rectangular cavities. The arrangement period of the first rectangular structures is 2C1, and the arrangement period of the second rectangular structures is 2C1. The metal layer further comprises a plurality of first square structures, the first square structures are located in the center of the rectangular cavity, and the first square structures are squares with the side length of C1 * D1.

Description

Technical Field

[0001] This application relates to the field of optical communication, and more particularly to a grating filter, a chip module, and a computer device. Background Technology

[0002] Low-temperature complementary metal-oxide-semiconductor (CMOS) technology has advantages such as high integration and low signal distortion, and is widely used in fields such as quantum computing and infrared detection. Low-temperature CMOS technology integrates measurement and control circuitry onto a CMOS chip and places it inside a cryostat to achieve qubit manipulation.

[0003] Low-temperature CMOS chips typically operate in the cryogenic range of 4.2K or 20-100mK. Due to the limited power of cryogenic refrigerators, it is impossible to complete all quantum computing control algorithm processing directly in the cryogenic range. A large number of complex calculations and feedback control require data to be transmitted to a central processing unit (CPU) at room temperature for processing. Therefore, a high-speed interface interconnection between the low-temperature CMOS chip and the room-temperature CPU is required.

[0004] Currently, the main high-speed interface technologies that can operate in ultra-low temperature environments (4K) and be integrated into CMOS chips include digital-to-analog converter (DAC) cables, terahertz (THz) wireless interconnects, and fiber optic interconnects. DAC cables have high power consumption and high attenuation, while THz wireless interconnects suffer from significant crosstalk. Fiber optic interconnects offer advantages such as low attenuation, high bandwidth, and thermal insulation, making them a more competitive solution for interconnecting low-temperature CMOS with room-temperature CPUs.

[0005] However, one of the challenges of fiber optic interconnects lies in achieving the alignment and coupling between the fiber and the cryogenic CMOS chip. Low alignment accuracy between the fiber and the CMOS chip will lead to partial optical signal leakage, resulting in signal attenuation and a decrease in the signal-to-noise ratio. Therefore, fiber optic interconnects require high alignment accuracy between the fiber and the CMOS chip, necessitating a solution that reduces this accuracy requirement. Summary of the Invention

[0006] This application provides a grating filter, a chip module, and a computer device to reduce the alignment accuracy requirements between a CMOS chip and a room-temperature device.

[0007] In a first aspect, embodiments of this application provide a grating filter. The grating filter provided in this application includes at least one metal layer. The metal layer includes a plurality of first rectangular structures periodically arranged along a first direction and a plurality of second rectangular structures periodically arranged along a second direction, the first direction being perpendicular to the second direction. In the plurality of first rectangular structures and the plurality of second rectangular structures, adjacent first rectangular structures and adjacent second rectangular structures form a rectangular cavity. The arrangement period of the plurality of first rectangular structures is 2C1, and the arrangement period of the plurality of second rectangular structures is 2C1. The metal layer also includes a plurality of first square structures, each located at the center of a rectangular cavity, and each first square structure is a square with a side length of C1*D1.

[0008] In this embodiment, the optical signal is incident on the grating filter along a third direction, which is perpendicular to both the first and second directions. For the optical signal incident on the metal layer 2100 along the third direction, the different polarization directions of the optical signal are all located on a plane perpendicular to the third direction.

[0009] On one hand, of the two first rectangular structures and two second rectangular structures constituting the rectangular cavity, the two first rectangular structures are arranged along a first direction, and the two second rectangular structures are arranged along a second direction. On a plane perpendicular to the third direction (i.e., on the plane where the different polarization directions of the incident light signal are located, referred to as the horizontal plane in this embodiment), the rectangular cavity is a symmetrical structure on the horizontal plane, and is insensitive to different polarization directions on the horizontal plane, thus being insensitive to the polarization direction of the incident light signal. Even if the incident direction of the light signal deviates from the third direction by a certain angle, the symmetrical structure on the horizontal plane can tolerate the deviation of that angle, and the transmission of light signals with different polarization directions is not affected.

[0010] On the other hand, the preset incident direction of the optical signal is a third direction. Due to the symmetrical horizontal structure of the metal layer, when the actual incident direction deviates from the third direction by an angle θ, the optical signal, after being incident on the grating filter, can be reflected by the inner wall of the rectangular cavity to the inner wall on the opposite side. This ensures that optical signals with θ≤30° are confined within the rectangular cavity and transmitted to the bottom of the cavity through multiple reflections by the inner wall, preventing the optical signal from being reflected outside the grating filter and causing leakage.

[0011] In summary, considering both the polarization and incident angle of the optical signal, the grating filter structure provided in this application is not sensitive to the incident direction, thus reducing the alignment accuracy requirements. This structure allows for a tolerable skew angle of 20-30° for the optical signal, meaning the optical signal can be incident on the grating filter at a 20-30° deviation from the incident direction, with minimal polarization and leakage after incident (the degree of polarization and leakage is tolerable).

[0012] In one alternative implementation, 0.1um ≤ C1 ≤ 1um.

[0013] In one alternative implementation, 20% ≤ D1 ≤ 80%.

[0014] In one alternative implementation, at least one metal layer comprises a plurality of metal layers arranged along a third direction, which is perpendicular to both the first and second directions.

[0015] In the embodiments of this application, the structural design of multiple metal layers can increase the total thickness of the metal layers under low-temperature CMOS process, thereby increasing the tolerable optical signal skew angle θ, and further reducing the alignment accuracy requirements.

[0016] In one alternative implementation, the multiple metal layers include four metal layers.

[0017] In this embodiment, the four-layer metal structure is the optimal number of metal layers set after simulation testing, which can reduce the alignment accuracy requirements of the optical fiber.

[0018] In one alternative implementation, a dielectric layer is also included between adjacent metal layers.

[0019] In this embodiment, a dielectric layer is provided between adjacent metal layers, which can better adapt to the low-temperature CMOS processing technology and improve the feasibility of the structure.

[0020] In one alternative implementation, C1 satisfies the correspondence between the incident light wavelength λ of the grating filter, the refractive index n1 of the metal layer, the refractive index n2 of the dielectric layer, and the interlayer distance t between adjacent metal layers in the multiple metal layers, as described in Formula 1:

[0021]

[0022] In this embodiment, the arrangement period 2C1 of the first rectangular structure and the second rectangular structure is determined using Formula 1 and parameters such as the incident light wavelength λ, so that the metal layer is adapted to the optical signal with wavelength λ. In optical signals originating from optical fibers, optical signals with wavelength λ can be transmitted through the metal layer.

[0023] In one optional implementation, multiple first rectangular structures and multiple second rectangular structures are located on a first region of the metal layer. The second region of the metal layer further includes: multiple third rectangular structures periodically arranged along a first direction, and multiple fourth rectangular structures periodically arranged along a second direction. Adjacent third and fourth rectangular structures form rectangular cavities. The arrangement period of the multiple third rectangular structures is 2C2, and the arrangement period of the multiple fourth rectangular structures is 2C2. The second region also includes multiple second square structures. Each second square structure is located at the center of a rectangular cavity in the second region and is a square with side length C2*D2. Where C2≠C1, and / or, D2≠D1.

[0024] In this embodiment, C1≠C2 and / or D1≠D2 are configured in the two regions of the grating filter, and the two regions have different sizes. The two regions with different sizes can transmit optical signals of different wavelengths, thereby improving the integration and transmission bandwidth of the grating filter.

[0025] In one alternative implementation, C2 satisfies the correspondence between the incident light wavelength λ of the grating filter, the refractive index n1 of the metal layer, the refractive index n2 of the dielectric layer, and the interlayer distance t between adjacent metal layers in the multiple metal layers, as described in Formula 2:

[0026]

[0027] In this embodiment, the arrangement period 2C2 of the third and fourth rectangular structures is determined using Formula 2 and parameters such as the incident light wavelength λ', making the metal layer adaptable to optical signals with wavelength λ'. Optical signals from optical fibers with wavelength λ' can be transmitted through the metal layer.

[0028] Secondly, embodiments of this application provide a chip module. The chip module includes a first CMOS chip and a room-temperature device. The first CMOS chip includes a grating filter as described in the first aspect or its implementation. The room-temperature device is connected to an optical fiber, and the optical fiber is coupled to the grating filter.

[0029] In one alternative implementation, the chip module further includes a second CMOS chip. The second CMOS chip includes the grating filter described in the first aspect or its implementation. An optical fiber of the room-temperature chip is coupled to both the grating filter of the first CMOS chip and the grating filter of the second CMOS chip. The C1 value of the grating filter in the second CMOS chip is not equal to the C1 value of the grating filter in the first CMOS chip; and / or, the D1 value of the grating filter in the second CMOS chip is not equal to the D1 value of the grating filter in the first CMOS chip.

[0030] In this embodiment, C1≠C2 or D1≠D2 are configured in the two CMOS chips, resulting in two CMOS chips with different sizes. These two CMOS chips of different sizes can transmit optical signals of different wavelengths, thereby improving the integration and transmission bandwidth of the CMOS chip module.

[0031] Thirdly, embodiments of this application provide a computer device. This computer device includes the chip module described in the second aspect.

[0032] Optionally, the computer device may be a quantum computer, a data center, a cloud server, or other computer equipment, and this application does not limit it in this regard.

[0033] The beneficial effects of the second and third aspects are described in the first aspect and will not be repeated here. Attached Figure Description

[0034] Figure 1 A schematic diagram illustrating the connection relationship between the low-temperature CMOS and the room-temperature structure provided in this application;

[0035] Figure 2 This is a schematic diagram of the structure of the grating filter provided in this application;

[0036] Figure 3 A schematic diagram of the structure of a grating filter provided in an embodiment of this application;

[0037] Figure 4 A schematic diagram of a horizontal structure of a grating filter provided in an embodiment of this application;

[0038] Figure 5a A schematic diagram of a simulation result for the grating filter D provided in an embodiment of this application;

[0039] Figure 5b This is another simulation result diagram of the grating filter D provided in the embodiments of this application;

[0040] Figure 6 This is a schematic diagram of the transmission of incident light signal in a grating filter provided in an embodiment of this application;

[0041] Figure 7 This is a schematic diagram of the structure of a grating filter with multiple metal layers provided in an embodiment of this application;

[0042] Figure 8 An exploded view of a grating filter with multiple metal layers provided in an embodiment of this application;

[0043] Figure 9 A schematic diagram showing the correspondence between the size C of the grating filter with multiple metal layers and the incident light wavelength λ provided in the embodiments of this application;

[0044] Figure 10 This is a schematic diagram of the vertical structure of the grating filter provided in an embodiment of this application;

[0045] Figure 11 A schematic diagram of the structure of a grating filter including a first region and a second region is provided for an embodiment of this application;

[0046] Figure 12 This is a schematic diagram illustrating the connection relationship between the grating filter, optical fiber, and PD layer, including the first region and the second region, provided for embodiments of this application. Detailed Implementation

[0047] The embodiments of this application will now be described with reference to the accompanying drawings. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are equally applicable to similar technical problems.

[0048] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms are interchangeable where appropriate; this is merely a way of distinguishing objects with the same attributes in the embodiments of this application. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus that comprises a series of units is not necessarily limited to those units, but may include other units not explicitly listed or inherent to those processes, methods, products, or apparatuses. Additionally, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, at least one of a, b, or c can be expressed as: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0049] Superconducting quantum computing uses measurement and control signals to control qubits in the low-temperature region, thereby realizing quantum computing. These measurement and control signals are typically generated by measurement and control circuits such as digital-to-analog converters (DACs), analog-to-digital converters (ADCs), mixers, and amplifiers.

[0050] exist Figure 1 In this context, 300K represents the normal temperature range, while 4.2K and 10mK represent the low temperature range. For example... Figure 1 As shown in Figure a, the measurement and control circuit is usually located in the room temperature region, which leads to problems such as low integration, excessive heat conduction from cables, and signal distortion due to long transmission paths in the low temperature region. Currently, this problem is being addressed using low-temperature complementary metal-oxide-semiconductor (CMOS) technology. CMOS technology integrates the measurement and control circuit onto a CMOS chip and places it inside a refrigerator to achieve quantum bit manipulation.

[0051] like Figure 1 As shown in Figure b, low-temperature CMOS chips typically operate in the low-temperature range of 4.2K or 20-100mK. Due to the limited power of the cryostat, it is impossible to complete all quantum computing control algorithm processing directly in the low-temperature region. A large number of complex calculations and feedback control require data to be transmitted to a room-temperature CPU for processing. Therefore, a high-speed interface interconnection between the low-temperature CMOS chip and the room-temperature CPU is required.

[0052] Currently, the high-speed interface technologies that can operate in ultra-low temperature environments (4K) and be integrated into CMOS chips mainly include DAC cables, terahertz (THz) wireless interconnects, and fiber optic interconnects.

[0053] DAC cables enable communication between a normal temperature range of 300K and a low temperature range of 4.2K. However, these cables suffer from high power consumption and significant signal attenuation. THz wireless interconnects transmit signals through wireless channels, which presents problems such as crosstalk and high reflection rates.

[0054] Fiber optic interconnects have advantages such as low attenuation, large bandwidth, and thermal insulation, making them a more competitive solution for interconnecting low-temperature CMOS and room-temperature CPUs.

[0055] However, one of the challenges of fiber optic interconnects lies in achieving the alignment and coupling between the fiber and the cryogenic CMOS chip. Low alignment accuracy between the fiber and the CMOS chip will lead to partial optical signal leakage, resulting in signal attenuation and a decrease in the signal-to-noise ratio. Therefore, fiber optic interconnects require high alignment accuracy between the fiber and the CMOS chip, necessitating a solution that reduces this accuracy requirement.

[0056] To reduce the alignment accuracy requirements between optical fibers and low-temperature CMOS chips, embodiments of this application provide a grating filter, a chip module, and a computer device. The grating filter provided in this application uses a symmetrical design to ensure that the incident light beam is reflected multiple times into a preset area, thereby relaxing the requirements for grating alignment accuracy.

[0057] One approach is to reduce alignment accuracy requirements by using a grating filter. Figure 2 This is a schematic diagram of the grating filter provided in this application. Figure 2 As shown, the grating filter 2000 includes a metal layer 2100. The metal layer 2100 can be made of copper, aluminum, or other metal materials, and this application does not limit this.

[0058] The metal layer 2100 includes a plurality of first rectangular structures 2110 periodically arranged along a first direction and second rectangular structures 2120 periodically arranged along a second direction. For example... Figure 2 As shown, for a single first rectangular structure 2110, its extension direction is the second direction; for a single second rectangular structure 2120, its extension direction is the first direction.

[0059] The first rectangular structure 2110 and the second rectangular structure 2120 can be obtained through an etching process on the metal layer 2000. For the grating filter 2000, the growth direction of the metal layer is a third direction, and the etching direction is also a third direction. The third direction is perpendicular to both the first and second directions. Therefore, the sidewalls of the first rectangular structure 2110 are parallel to the third direction; the sidewalls of the second rectangular structure 2120 are also parallel to the third direction. The third direction is also the direction in which the optical signal is incident on the grating filter 2000.

[0060] The first direction is perpendicular to the second direction. Since the first direction is perpendicular to the second direction, adjacent first rectangular structures 2110 and adjacent second rectangular structures 2120 can form a rectangular cavity.

[0061] The arrangement period of the multiple first rectangular structures 2110 is 2C1, and the arrangement period of the multiple second rectangular structures 2120 is also 2C1. 0.1um≤C1≤1um. That is, the length of two adjacent sides of the rectangular cavity (perpendicular to the third direction) is 2C1, and the length of the third side is the height of the metal layer 2100.

[0062] Due to the limitations of low-temperature CMOS technology, this application also incorporates a square structure at the center of the rectangular cavity. For example... Figure 3 As shown, the metal layer 2100 also includes a plurality of first square structures 2130. The first square structure 2130 is located at the center of the rectangular cavity, and the first square structure 2130 is a square with a side length of C1*D1.

[0063] like Figure 4 As shown, D1 is the duty cycle of the first square structure 2130 in the arrangement period 2C1 of the first rectangular structure 2110 / second rectangular structure 2120.

[0064] D1 is determined by simulation results. Figure 5a This is a schematic diagram showing the resonant peak wavelength f0 corresponding to D and the maximum transmittance T corresponding to the resonant peak. (See diagram below.) Figure 5b As shown, the larger D1 is, the larger the corresponding resonant peak wavelength f0 is, and the smaller the maximum transmission T corresponding to the resonant peak is. The optimal range for D1 is 20% ≤ D1 ≤ 80%.

[0065] In this embodiment, the optical signal is incident on the grating filter along a third direction, which is perpendicular to both the first and second directions. For the optical signal incident on the metal layer 2100 along the third direction, the different polarization directions of the optical signal are all located on a plane perpendicular to the third direction.

[0066] On one hand, of the two first rectangular structures 2110 and two second rectangular structures 2120 constituting the rectangular cavity, the two first rectangular structures 2110 are arranged along a first direction, and the two second rectangular structures 2120 are arranged along a second direction. For example... Figure 4 As shown, on a plane perpendicular to the third direction (i.e., on the plane containing the different polarization directions of the incident light signal, referred to as the horizontal plane in this embodiment), the rectangular cavity is a symmetrical structure on the horizontal plane, insensitive to different polarization directions on the horizontal plane, and therefore insensitive to the polarization direction of the incident light signal. Even if the incident direction of the light signal deviates from the third direction by a certain angle, the symmetrical structure on the horizontal plane can tolerate the deviation of that angle, and the transmission of light signals with different polarization directions is not affected.

[0067] On the other hand, such as Figure 6 As shown, the preset incident direction of the optical signal is the third direction. Due to the symmetrical horizontal structure of the metal layer, when the actual incident direction deviates from the third direction by an angle θ, the optical signal, after being incident on the grating filter 2000, can be reflected by the inner wall of the rectangular cavity to the inner wall on the opposite side. This ensures that optical signals with θ≤30° are confined within the rectangular cavity and transmitted to the bottom of the cavity through multiple reflections by the inner wall, preventing the optical signal from being reflected outside the grating filter 2000 and causing leakage.

[0068] θ can be 20°, 25°, or 30°, and this application does not limit it.

[0069] In summary, considering both the polarization and incident angle of the optical signal, the grating filter structure provided in this application is not sensitive to the incident direction, thus reducing the alignment accuracy requirements. This structure allows for a tolerable skew angle of 20-30° for the optical signal, meaning the optical signal can be incident on the grating filter 2000 at a 20-30° deviation from the third direction without significant polarization or leakage (the degree of polarization and leakage is tolerable).

[0070] It is worth noting that the metal layer 2100 can be a single metal layer or a combination of multiple metal layers. Figure 7 The multi-metallic layer structure shown. Figure 7 The example in the text consists of four metal layers (metal layers 2100-A to 2100-D), and the structure of each of the four metal layers is exactly the same.

[0071] Optionally, adjacent metal layers can be made of the same or different materials, and this application does not limit this. For example, the metal layers can be copper, aluminum, or other metallic materials, and this application does not limit this.

[0072] A dielectric layer 2200 is also included between adjacent metal layers, for example... Figure 7 The dielectric layers 2200-A to 2200-D are in the middle.

[0073] Figure 8 for Figure 7 An exploded view. (e.g.) Figure 8 As shown, dielectric layer 2200 is a whole layer of dielectric, excluding the first rectangular structure, the second rectangular structure and the first square structure.

[0074] Optionally, the dielectric layer 2200 may not be excluded between adjacent metal layers, and the adjacent metal layers 2100 may be made of different materials. This application does not limit this.

[0075] In a structure with multiple metal layers, each metal layer can be as follows: Figure 7 and Figure 8 The diagram may include the first square structure 2130, or it may not include the first square structure 2130; this application does not limit this.

[0076] Optionally, the size of C1 in the metal layer can be determined based on the wavelength of the optical signal. Figure 9 This shows the correspondence between C1 and parameters such as the wavelength of the optical signal, the refractive index of the metal layer, and the refractive layer. See also... Figure 9 C1 can be determined based on the following formula:

[0077]

[0078] Where m and n are both integers. λ is the wavelength of the optical signal incident on the grating filter 2000, n1 is the refractive index of the metal layer, n2 is the refractive index of the dielectric layer, and t is the interlayer distance between adjacent metal layers.

[0079] In the third direction, the interlayer arrangement of the grating filter 2000 is as follows: Figure 10 As shown, the substrate comprises multiple metal layers. Figure 10 The M1 to M7 layers correspond to Figure 7 and Figure 8 The metal layers 2100-A to 2100-D are included. Above the metal layers, dielectric layers may also be included. The grating filter 2000 can be the top layer of the CMOS chip, used to receive optical signals from the optical fiber.

[0080] In the grating filter 2000, the upper dialect layers are the top layer, followed by the metal layer 2100 (optionally, if there are multiple metal layer 2100 structures, one or more dielectric layers 2200 are also included) and the substrate layer.

[0081] Optionally, the PD, circuits, etc. of the CMOS chip can be disposed on the metal layer, or on the substrate layer, or a dedicated PD layer can be disposed between the metal layer and the substrate layer to accommodate the PD, circuits, etc. This application does not limit this.

[0082] The optical signal from the room temperature chip is incident on the upper dialect layers of the grating filter 2000 of the low temperature CMOS chip via optical fiber, and then transmitted to the PD through multiple metal layers, realizing the transmission of optical signal from the room temperature chip to the low temperature CMOS chip.

[0083] Optionally, the grating filter 2000 may also exclude the upper dialect layers, in which case the optical signal is directly incident from the optical fiber to the metal layer 2100.

[0084] In this embodiment, the metal layer can also be partitioned, and different wavelengths of optical signals can be transmitted by setting different sizes for different regions, thereby realizing the transmission of multi-wavelength signals.

[0085] like Figure 11 As shown, a plurality of first rectangular structures 2110 and a plurality of second rectangular structures 2120 are located on a first region of the metal layer 2100. On a second region of the metal layer 2100, there are also: a plurality of third rectangular structures 2140 periodically arranged along a first direction, and a plurality of fourth rectangular structures 2150 periodically arranged along a second direction.

[0086] In the plurality of third rectangular structures 2140 and the plurality of fourth rectangular structures 2150, adjacent third rectangular structures 2140 and adjacent fourth rectangular structures 2150 constitute a rectangular cavity.

[0087] like Figure 11 As shown, in the second region, the arrangement period of multiple third rectangular structures 2140 is 2C2, and the arrangement period of multiple fourth rectangular structures 2150 is 2C2, where C2 ≠ C1. The second region also includes multiple second square structures 2160, which are located at the center of the rectangular cavity in the second region, and each second square structure 2160 is a square with a side length of C2 * D2. Wherein, 0.1µm ≤ C2 ≤ 1µm, and 20% ≤ D2 ≤ 80%.

[0088] Optionally, the value of C2 in the metal layer can be determined based on the wavelength of the optical signal. The correspondence between C2 and parameters such as the wavelength of the optical signal, the refractive index of the metal layer and the refractive layer can be found in Formula 2 below:

[0089]

[0090] Where m and n are both integers. λ' is the wavelength of the optical signal incident on the second region of the grating filter 2000, n1 is the refractive index of the metal layer, n2 is the refractive index of the dielectric layer, and t is the interlayer distance between adjacent metal layers.

[0091] It is worth noting that the difference between the second and first regions lies in their size; different sized interfaces transmit optical signals of different wavelengths. Optionally, the size difference could be... Figure 11 The difference between the thicknesses C1 and C2 of the rectangular region shown can also be C1 = C2, such that D1 ≠ D2, but this application does not limit this.

[0092] In the embodiments of this application, the two regions of the grating filter 2000 are configured such that C1≠C2 or D1≠D2, so that the two regions can transmit optical signals of different wavelengths respectively, thereby improving the integration and transmission bandwidth of the grating filter 2000.

[0093] like Figure 12 As shown, optical fibers can transmit optical signals of multiple wavelengths, for example... Figure 12 Optical signals at 532nm and 637nm are transmitted. Since the structure size corresponding to 532nm is larger, it can be transmitted through a rectangular cavity in the first region; since the structure size corresponding to 637nm is smaller, it can be transmitted through a rectangular cavity in the second region.

[0094] It is worth noting that, Figure 11 and Figure 12Two optical signals of different wavelengths can be transmitted using two regions of different sizes, or more regions can be set up to transmit optical signals of more wavelengths; this application does not limit this.

[0095] It is worth noting that, Figure 11 and Figure 12 The description of the metal layer regional structure is based on a single metal layer 2100. It can also be set as a multi-metal layer. A dielectric layer 2200 can be optionally set between adjacent metal layers 2100. This application does not limit this.

[0096] Based on the structural design of the grating filter 2000 described above, this application embodiment also provides a chip module. The chip module includes a first CMOS chip and a room-temperature device. The first CMOS chip includes... Figures 2 to 12 The grating filter 2000 in the embodiment is described.

[0097] The room temperature equipment is connected to an optical fiber, which is coupled to a grating filter 2000.

[0098] Optionally, the ambient temperature device may include ambient temperature instruments, ambient temperature equipment, or ambient temperature chips, and this application does not limit this.

[0099] In one alternative implementation, the chip module may further include a second CMOS chip, which includes... Figures 2 to 11 The grating filter 2000 in the embodiment is coupled not only to the grating filter of the first CMOS chip, but also to the grating filter of the second CMOS chip.

[0100] The C1 of the grating filter in the second CMOS chip is not equal to the C1 of the grating filter in the first CMOS chip; and / or, the D1 of the grating filter in the second CMOS chip is not equal to the D1 of the grating filter in the first CMOS chip.

[0101] In the embodiments of this application, C1≠C2 or D1≠D2 are made in the two CMOS chips, so that the two CMOS chips can transmit optical signals of different wavelengths respectively, thereby improving the integration and transmission bandwidth of the CMOS chip module.

[0102] Optionally, since the grating filter 2000 has wavelength selection capabilities, it can also be used to isolate the uplink and downlink optical paths, thereby achieving bidirectional transmission and reception. Furthermore, this structure prevents stray light leakage from causing analog and digital circuit failures. The grating filter 2000, PD, and CMOS measurement and control circuits all utilize the same low-temperature CMOS process, and therefore can be integrated onto the same CMOS chip.

[0103] Based on the aforementioned chip module, this application also provides a computer device. This computer device includes the aforementioned chip module.

[0104] Optionally, the computer device may be a quantum computer, a data center, a cloud server, or other computer equipment, and this application does not limit it in this regard.

[0105] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0106] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.

[0107] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0108] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0109] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

Claims

1. A grating filter, characterized in that, Includes at least one metal layer; The metal layer in the at least one metal layer includes a plurality of first rectangular structures arranged periodically along a first direction and a plurality of second rectangular structures arranged periodically along a second direction, wherein the first direction is perpendicular to the second direction. In the plurality of first rectangular structures and the plurality of second rectangular structures, adjacent first rectangular structures and adjacent second rectangular structures constitute a rectangular cavity; The arrangement period of the plurality of first rectangular structures is 2C1, and the arrangement period of the plurality of second rectangular structures is 2C1; The metal layer also includes a plurality of first square structures, each of which is located at the center of the rectangular cavity and is a square with a side length of C1*D1.

2. The filter according to claim 1, characterized in that, 0.1um≤C1≤1um.

3. The filter according to claim 1 or 2, characterized in that, 20％≤D1≤80％。 4. The filter according to any one of claims 1 to 3, characterized in that, The at least one metal layer comprises a plurality of metal layers arranged along a third direction, which is perpendicular to both the first direction and the second direction.

5. The filter according to claim 4, characterized in that, The plurality of metal layers includes four metal layers.

6. The filter according to claim 4 or 5, characterized in that, Among the plurality of metal layers, a dielectric layer is also included between adjacent metal layers.

7. The filter according to claim 6, characterized in that, C1, the incident light wavelength λ of the grating filter, the refractive index n1 of the metal layer, the refractive index n2 of the dielectric layer, and the interlayer distance t between adjacent metal layers satisfy the correspondence described in Formula 1:

8. The filter according to any one of claims 1 to 7, characterized in that, The plurality of first rectangular structures and the plurality of second rectangular structures are located on the first region of the metal layer; The second region of the metal layer also includes: A plurality of third rectangular structures periodically arranged along the first direction, and a plurality of fourth rectangular structures periodically arranged along the second direction; In the plurality of third rectangular structures and the plurality of fourth rectangular structures, adjacent third rectangular structures and adjacent fourth rectangular structures form a rectangular cavity; The arrangement period of the plurality of third rectangular structures is 2C2, and the arrangement period of the plurality of fourth rectangular structures is 2C2; The second region also includes multiple second square structures; The second square structure is located at the center of the rectangular cavity in the second region, and the second square structure is a square with a side length of C2*D2; Where C2≠C1, and / or D2≠D1.

9. The filter according to claim 8, characterized in that, C2, the incident light wavelength λ of the grating filter, the refractive index n1 of the metal layer, the refractive index n2 of the dielectric layer, and the interlayer distance t between adjacent metal layers satisfy the correspondence described in Formula 2:

10. A chip module, characterized in that, It includes a first complementary metal-oxide-semiconductor CMOS chip and a room-temperature device (instrument, device or chip), wherein the first CMOS chip includes a grating filter according to any one of claims 1 to 9; The ambient temperature device is connected to an optical fiber, and the optical fiber is coupled to the grating filter.

11. The chip module according to claim 10, characterized in that, It also includes a second CMOS chip, which includes the grating filter according to any one of claims 1 to 9; The optical fiber of the room temperature chip is coupled to the grating filter of the first CMOS chip and to the grating filter of the second CMOS chip. The C1 of the grating filter in the second CMOS chip is not equal to the C1 of the grating filter in the first CMOS chip; and / or, the D1 of the grating filter in the second CMOS chip is not equal to the D1 of the grating filter in the first CMOS chip.

12. A computer device, characterized in that, Includes the chip module as described in claim 10 or 11.

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