A production control method and device of a high creepage resistor and a storage medium

Abstract

The application discloses a production control method and device of a high creepage resistor and a storage medium. The method comprises the following steps: acquiring image modeling of the high creepage resistor to determine processing parameters and pouring parameters; controlling a cutting device to perform tapping treatment on two ends of an outer pipe body of a hollow structure to form internal threads, and to perform ring groove cutting treatment on the outer side of the outer pipe body; assembling a first electrode block and one end of a resistor assembly, and threadedly connecting the first electrode block and a first end of the outer pipe body; controlling a pouring device to inject pouring sealing material from a second end of the outer pipe body for multiple times according to the pouring parameters; threadedly connecting a second electrode block and the second end of the outer pipe body, and connecting the second electrode block with the other end of the resistor assembly to form the high creepage resistor; acquiring an appearance image of the high creepage resistor and pouring state feedback information of each injection of the pouring sealing material, and adjusting the processing parameters and the pouring parameters according to the appearance image and the pouring state feedback information. The application can improve the stability of product quality.

Description

Technical Field

[0001] This application relates to the field of resistor technology, and in particular to a production control method, equipment and storage medium for a high creepage resistor. Background Technology

[0002] High creepage distance resistors are key components in electrical equipment, and their creepage distance performance and structural stability directly affect the operational safety and reliability of the equipment. They are widely used in various circuit scenarios with high insulation requirements. The production process of these resistors typically involves multiple core processes such as outer tube processing, component assembly, and potting molding. The matching degree of process parameters in each process plays a decisive role in the final product quality.

[0003] In existing technologies, the production of high creepage distance resistors mostly employs fixed process parameters for processing and potting, lacking dynamic adaptation and adjustment to the actual conditions during production. Because fluctuations in the outer tube processing accuracy and changes in the flow state of the potting material may occur during production, fixed parameters struggle to adapt to these real-time changes. This can easily lead to problems such as substandard outer tube processing accuracy and poor potting layer formation, consequently affecting the consistency of the resistor's creepage distance and structural robustness, and failing to guarantee product quality stability. Summary of the Invention

[0004] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a production control method, equipment, and storage medium for high creepage resistors, which can improve the stability of product quality.

[0005] In a first aspect, this application provides a production control method for high creepage resistors, applied to production equipment for high creepage resistors, the production equipment including a cutting device and a casting device, the production control method comprising:

[0006] Image modeling of high creepage resistors;

[0007] Based on image modeling, the processing parameters and grouting parameters are determined;

[0008] According to the processing parameters, the cutting device is controlled to tap the first and second ends of the hollow outer tube to form internal threads, and to perform annular groove cutting on the outer side of the outer tube.

[0009] Assemble one end of the first electrode block and the resistor assembly, and thread the first electrode block to the first end of the outer tube body to install the resistor assembly into the outer tube body. The other end of the resistor assembly is led out from the second end of the outer tube body through a wire.

[0010] According to the pouring parameters, the pouring device is controlled to inject potting material multiple times from the second end of the outer tube to form a potting layer inside the outer tube.

[0011] The second electrode block is threaded to the second end of the outer tube and connected to the wire leading out from the other end of the resistor assembly to form the high creepage resistor.

[0012] The appearance image of the high creepage resistor and the potting status feedback information of each injection of potting material are obtained, and the processing parameters and the potting parameters are adjusted according to the appearance image and the potting status feedback information.

[0013] The production control method for high creepage distance resistors according to the first aspect of this application has at least the following beneficial effects: First, an image model of the high creepage distance resistor is acquired, and processing parameters and pouring parameters are determined accordingly. Then, a cutting device is controlled to tap the first and second ends of the outer tube to form internal threads, and annular groove cutting is performed on the outer side of the outer tube. Next, the resistor assembly with the first electrode block is installed into the outer tube through a threaded connection. A potting material is injected multiple times from the second end of the outer tube through a pouring device to form a potting layer. Finally, the second electrode block is threadedly connected to the second end of the outer tube and a wire is connected. Simultaneously, the appearance image of the high creepage distance resistor and the potting status feedback information of each injection of potting material are acquired, and the processing parameters and pouring parameters are dynamically adjusted. This method accurately sets the initial parameters through image modeling, and then optimizes and adjusts the parameters by combining real-time status feedback during the production process. This effectively solves the problem that existing fixed parameters cannot adapt to real-time changes in production, avoids situations where the outer tube processing accuracy is substandard and the potting layer forming effect is poor, ensures the consistency of creepage distance and structural robustness of the high creepage distance resistor, and improves the stability of product quality.

[0014] According to some embodiments of the first aspect of this application, the resistor assembly includes a plurality of resistive transistors and conductive transistors, with adjacent resistive transistors connected through the conductive transistors.

[0015] Based on image modeling, irrigation parameters are determined, including:

[0016] Based on the image modeling, determine the set of intersection positions between each of the resistor tubes and the conductive tubes, as well as the set of gaps between the resistor tubes, the conductive tubes and the inner wall of the outer tube;

[0017] The number of pouring operations and the amount of material injected each time are determined based on the set of intersecting positions and the set of gaps.

[0018] The pouring parameters are generated by integrating the number of pours, the amount of material injected, the initial material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature.

[0019] According to some embodiments of the first aspect of this application, obtaining filling status feedback information for each injection of filling material, and adjusting the filling parameters based on the filling status feedback information, includes:

[0020] After each injection of potting material, the current liquid level inside the outer tube is obtained;

[0021] Based on the current liquid level and the set of intersecting positions, and according to preset parameter constraint rules, adjust the material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature;

[0022] The pouring parameters are adjusted based on the new material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature.

[0023] According to some embodiments of the first aspect of this application, adjusting the material temperature, the injection pressure, the injection flow rate, and the cavity temperature based on the current liquid level and the set of intersecting positions, and based on preset parameter constraint rules, includes:

[0024] Based on the set of intersection positions, determine the theoretical intersection position for the current iteration;

[0025] If the current liquid level is lower than the theoretical intersection position, perform at least one of the following actions: increase the material temperature, increase the injection pressure, increase the injection flow rate, and increase the internal cavity temperature.

[0026] If the current liquid level is greater than the theoretical intersection position, perform at least one of the following actions: reduce the material temperature, reduce the injection pressure, reduce the injection flow rate, and reduce the internal cavity temperature.

[0027] According to some embodiments of the first aspect of this application, adjusting the material temperature, the injection pressure, the injection flow rate, and the cavity temperature based on the current liquid level information and the set of intersecting positions, and based on preset parameter constraint rules, includes:

[0028] Based on the parameter constraint rules, determine the material constraint range, pressure constraint range, flow velocity constraint range, and internal cavity constraint range;

[0029] Based on the current material temperature, injection pressure, injection flow rate, and cavity temperature, and based on the material constraint range, pressure constraint range, flow rate constraint range, and cavity constraint range, a one-to-one corresponding upward and downward adjustment priority is obtained;

[0030] Based on the current liquid level information and the set of intersecting positions, and according to the parameter constraint rules and the up-adjustment priority or the down-adjustment priority, the material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature are adjusted.

[0031] According to some embodiments of the first aspect of this application, the step of obtaining a one-to-one corresponding upward and downward adjustment priority based on the current material temperature, the injection pressure, the injection flow rate, and the cavity temperature, and based on the material constraint range, the pressure constraint range, the flow rate constraint range, and the cavity constraint range, includes:

[0032] Calculate the deviation between the current maximum value and the median value of the material temperature and the material constraint range, the deviation between the current maximum value and the median value of the injection pressure and the pressure constraint range, the deviation between the current maximum value and the median value of the injection flow rate and the flow rate constraint range, and the deviation between the current maximum value and the median value of the cavity temperature and the cavity constraint range. Calculate the upper limit deviation of the material, the upper limit deviation of the pressure, the upper limit deviation of the flow rate, and the upper limit deviation of the cavity.

[0033] Based on the upper limit deviation of the material, the upper limit deviation of the pressure, the upper limit deviation of the flow rate, and the upper limit deviation of the cavity, the upward adjustment priority of the material temperature, the injection pressure, the injection flow rate, and the cavity temperature is determined one by one;

[0034] Calculate the deviation between the minimum and median values ​​of the current material temperature and the material constraint range, the deviation between the minimum and median values ​​of the current injection pressure and the pressure constraint range, the deviation between the minimum and median values ​​of the current injection flow rate and the flow rate constraint range, and the deviation between the minimum and median values ​​of the current cavity temperature and the cavity constraint range. Calculate the lower limit deviation of the material, the lower limit deviation of the pressure, the lower limit deviation of the flow rate, and the lower limit deviation of the cavity.

[0035] Based on the lower limit deviation of the material, the lower limit deviation of the pressure, the lower limit deviation of the flow rate, and the lower limit deviation of the cavity, the down-adjustment priority of the material temperature, the injection pressure, the injection flow rate, and the cavity temperature is determined one by one.

[0036] According to some embodiments of the first aspect of this application, obtaining filling status feedback information for each injection of filling material, and adjusting the filling parameters based on the filling status feedback information, includes:

[0037] Obtain the surface flatness of the potting layer after the last injection of encapsulating material, and the assembly coaxiality between the outer tube and the resistor assembly;

[0038] Adjust the position of the pouring device to inject the potting material according to the surface flatness and assembly coaxiality of the potting layer.

[0039] According to some embodiments of the first aspect of this application, obtaining an external image of the high creepage distance resistor and adjusting the processing parameters based on the external image includes:

[0040] Take an external image of the high creepage resistor after potting and assembly;

[0041] Based on the appearance image, determine the actual depth of each annular groove and the actual distance between each adjacent annular groove;

[0042] Based on the image modeling, the desired depth and desired distance of the annular groove in the high creepage resistor are determined;

[0043] A cutting depth correction coefficient is generated based on the average of several actual depths and the desired depth.

[0044] Based on several consecutive actual distances and the desired distance, a cutting offset gradient is generated, and a cutting offset correction coefficient is generated based on the cutting offset gradient;

[0045] The processing parameters are adjusted based on the cutting depth correction coefficient and the cutting offset correction coefficient.

[0046] Secondly, this application also provides a production apparatus for high creepage distance resistors, comprising:

[0047] At least one memory;

[0048] At least one processor;

[0049] At least one program;

[0050] The program is stored in the memory, and the processor executes at least one of the programs to implement the production control method for high creepage resistors as described in any embodiment of the first aspect.

[0051] Thirdly, a computer-readable storage medium storing a computer-executable program for performing a production control method for a high creepage resistor as described in any embodiment of the first aspect.

[0052] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0053] Additional aspects and advantages of this application will become apparent and readily understood in conjunction with the following description of the embodiments, in which:

[0054] Figure 1 A flowchart of the production control method for the high creepage resistor provided in this application;

[0055] Figure 2 This is a cross-sectional schematic diagram of the high creepage distance resistor provided in this application.

[0056] The attached icons are numbered as follows:

[0057] Outer tube 100; annular groove 110; first electrode block 120; second electrode block 130; resistor tube 210; conductive tube 220. Detailed Implementation

[0058] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0059] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0060] In the description of this application, the use of "first" and "second" is for the purpose of distinguishing technical features only, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of the technical features indicated.

[0061] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0062] High creepage distance resistors are key components in electrical equipment, and their creepage distance performance and structural stability directly affect the operational safety and reliability of the equipment. They are widely used in various circuit scenarios with high insulation requirements. The production process of these resistors typically involves multiple core processes such as outer tube processing, component assembly, and potting molding. The matching degree of process parameters in each process plays a decisive role in the final product quality.

[0063] In existing technologies, the production of high creepage distance resistors mostly employs fixed process parameters for processing and potting, lacking dynamic adaptation and adjustment to the actual conditions during production. Because fluctuations in the outer tube processing accuracy and changes in the flow state of the potting material may occur during production, fixed parameters struggle to adapt to these real-time changes. This can easily lead to problems such as substandard outer tube processing accuracy and poor potting layer formation, consequently affecting the consistency of the resistor's creepage distance and structural robustness, and failing to guarantee product quality stability.

[0064] Based on this, this application provides a production control method, equipment, and storage medium for high creepage resistors to solve the aforementioned technical problems. The technical solutions provided in this application will be described in detail below.

[0065] Firstly, referring to Figure 1 and Figure 2 This application provides a production control method for high creepage resistors, applied to production equipment for high creepage resistors. The production equipment includes a cutting device and a casting device. The production control method may include, but is not limited to, the following steps:

[0066] Step S110: Obtain image modeling of the high creepage resistor.

[0067] Step S120: Based on the image model, determine the processing parameters and grouting parameters.

[0068] Step S130: According to the processing parameters, control the cutting device to tap the first and second ends of the hollow outer tube to form internal threads, and to perform annular groove cutting on the outer side of the outer tube.

[0069] Step S140: Assemble one end of the first electrode block and the resistor assembly, and connect the first electrode block to the first end of the outer tube body via a thread to install the resistor assembly into the outer tube body and lead the other end of the resistor assembly out from the second end of the outer tube body via a wire.

[0070] Step S150: According to the pouring parameters, control the pouring device to inject the potting material multiple times from the second end of the outer tube to form a potting layer inside the outer tube.

[0071] Step S160: Thread the second electrode block to the second end of the outer tube and connect it to the wire leading out from the other end of the resistor assembly to form a high creepage resistor.

[0072] Step S170: Obtain the appearance image of the high creepage resistor and the potting status feedback information for each injection of potting material, and adjust the processing parameters and potting parameters according to the appearance image and potting status feedback information.

[0073] In steps S110 to S170, an image model of the high creepage resistor is first acquired to determine the processing and pouring parameters. Then, the cutting device is controlled to tap the first and second ends of the outer tube 100 to form internal threads, and the outer side of the outer tube 100 is cut with an annular groove 110. The resistor assembly with the first electrode block 120 is then installed into the outer tube 100 through a threaded connection. The potting material is injected multiple times from the second end of the outer tube 100 through the pouring device to form a potting layer. Finally, the second electrode block 130 is threadedly connected to the second end of the outer tube 100 and a wire is connected. At the same time, the appearance image of the high creepage resistor and the potting status feedback information of each injection of potting material are acquired, and the processing and pouring parameters are dynamically adjusted. This method uses image modeling to accurately set initial parameters, and then combines real-time status feedback during the production process to optimize and adjust the parameters. This effectively solves the problem that existing fixed parameters cannot adapt to real-time changes in production, avoids situations where the outer tube processing accuracy is substandard and the potting layer forming effect is poor, ensures the consistency of creepage distance and structural robustness of high creepage resistors, and improves the stability of product quality.

[0074] It is understood that the resistor assembly includes several resistive tubes and conductive tubes, with adjacent resistive tubes connected by conductive tubes. The step S120, determining the pouring parameters, may include, but is not limited to, the following steps:

[0075] Step S210: Based on image modeling, determine the set of intersection positions between each resistor and conductor, as well as the set of gaps between the resistor, conductor and the inner wall of the outer tube.

[0076] Step S220: Determine the number of pours and the amount of material injected each time based on the set of intersecting positions and the set of gaps.

[0077] Step S230: Based on the number of pours, the amount of material injected, the initial material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature, integrate and generate the pouring parameters.

[0078] In steps S210 to S230, the set of intersection positions between each resistor tube 210 and conductive tube 220, as well as the set of gaps between the resistor tube 210, conductive tube 220 and the inner wall of the outer tube 100, are accurately determined through image modeling. This allows for the matching and determination of the number of pouring operations and the amount of material injected each time. Combined with the initial material temperature, injection pressure, injection flow rate and inner cavity temperature, the pouring parameters are generated. Compared to filling the outer tube 100 all at once, the design of pouring in stages with the amount of material injected each time precisely matching the intersection positions allows the potting material to fill the connection between the resistor tube 210 and conductive tube 220 and each gap segment by segment. This not only strengthens the structural strength of the connection between the resistor tube 210 and conductive tube 220, but also effectively reduces the air bubbles that are easily generated by one-time pouring. This makes the potting layer fit more tightly with the inner wall of the outer tube 100 and the resistor assembly, improving the molding quality of the potting layer and the overall structural stability, and ensuring the reliability of the high creepage resistor.

[0079] Assuming that image modeling determines that the resistor assembly contains two resistor tubes 210 and one conductive tube 220, corresponding to two intersecting positions (the first intersecting position is the connection between the first resistor tube 210 and the conductive tube 220, and the second intersecting position is the connection between the conductive tube 220 and the other resistor tube 210), and simultaneously, image modeling calculates the average cross-sectional area of ​​the gap between the inner wall of the outer tube 100 and the resistor tubes 210 and the conductive tube 220, as well as the height difference from the second end of the outer tube 100 to the first intersecting position, the height difference from the first intersecting position to the second intersecting position, and the height difference from the second intersecting position to the preset upper limit of the filling inside the outer tube 100; the number of pouring times is determined to be 3 times based on the number of intersecting positions and the segmentation of the filling path, that is, each injection ends at an intersecting position or the upper limit of the filling. The amount of material injected each time is calculated using the formula: "Volume of the encapsulation area = Height difference of the corresponding interval × Average cross-sectional area of ​​the gap". The first injection amount is the product of the height difference from the second end of the outer tube 100 to the first intersection position and the average cross-sectional area of ​​the gap, ensuring that the encapsulation material is filled exactly to the intersection position of the first resistor tube 210 and the conductive tube 220. The second injection amount is the product of the height difference from the first intersection position to the second intersection position and the average cross-sectional area of ​​the gap, so that the encapsulation material accurately covers the intersection position of the conductive tube 220 and the other resistor tube 210. The third injection amount is the product of the height difference from the second intersection position to the preset upper limit of the encapsulation inside the outer tube 100 and the average cross-sectional area of ​​the gap, completing the filling of the entire encapsulation area. Each injection amount is reserved with a small amount of redundancy to accommodate minor fluctuations in the gap.

[0080] It is understood that the step of adjusting the pouring parameters in step S170, which provides feedback on the pouring status of each injected potting material, may include, but is not limited to, the following steps:

[0081] Step S310: After each injection of potting material, obtain the current liquid level inside the outer tube.

[0082] Step S320: Based on the current liquid level and the set of intersecting positions, and based on preset parameter constraint rules, adjust the material temperature, injection pressure, injection flow rate and internal cavity temperature.

[0083] Step S330: Adjust the pouring parameters according to the new material temperature, injection pressure, injection flow rate and internal cavity temperature.

[0084] In steps S310 to S330, after each injection of potting material, the current liquid level inside the outer tube is obtained, combined with the set of intersecting positions and based on preset parameter constraint rules, and the material temperature, injection pressure, injection flow rate and inner cavity temperature are adjusted accordingly. Then the potting parameters are updated, which can correct the liquid level deviation that may occur during a single injection in real time, ensuring that the potting material injected in each subsequent injection can accurately reach the corresponding intersecting position. This avoids the problem of potting material not covering the intersecting position or exceeding the preset range due to improper parameters. It can also optimize the flow state of the potting material by dynamically adjusting the parameters, further reducing the residual air bubbles, making the connection between the resistor tube and the conductive tube and the gaps more compact, while ensuring that the parameter adjustment is always within a reasonable range, improving the consistency and reliability of the potting layer formation, and thus strengthening the structural robustness and operational stability of the high creepage resistor.

[0085] Material temperature directly determines the viscosity and flowability of potting material: when the material temperature increases, the viscosity decreases accordingly, the flowability increases, and it is easier to penetrate into the tiny gaps between the resistor tube and the conductive tube, as well as the gaps between the resistor tube, the conductive tube and the inner wall of the outer tube. It can smoothly fill to the preset intersection position and reduce the situation of incomplete filling or voids. If the material temperature is too low, the viscosity will increase, the flowability will be poor, the liquid surface rise speed of the potting material will slow down, and it may not be able to cover the intersection position in time. It may even cause local unfilled defects due to flow stagnation, affecting the bonding effect between the potting layer and the component.

[0086] Injection pressure is crucial for ensuring the filling range and density of potting material: insufficient injection pressure makes it difficult for potting material to overcome gap resistance and penetrate to all target areas, especially at the connection between the resistor tube and the conductive tube, which can easily lead to gap residue and incomplete filling, failing to effectively strengthen the structural strength of the connection; excessive injection pressure will cause the liquid level of the potting material to rise too quickly, possibly exceeding the preset intersection range, and may also cause air bubbles to remain due to pressure impact, or even disturb the installation position of the resistor assembly, affecting the subsequent potting accuracy and component stability.

[0087] The injection flow rate is directly related to the stability of the liquid surface rise of the potting material and the probability of bubble formation: When the injection flow rate is moderate, the potting material can rise smoothly along the gap between the inner wall of the outer tube and the resistor assembly, reducing turbulence and air entrainment, reducing the risk of bubble residue, and ensuring that the liquid surface can accurately match the intersection position; if the injection flow rate is too fast, it will easily cause material flow turbulence, which will not only entrain a large amount of air to form bubbles, but may also cause the resistor tube and conductive tube to shift due to impact force, or cause the liquid surface to quickly exceed the preset position; if the injection flow rate is too slow, it will prolong the time of a single injection, and the potting material may undergo preliminary solidification in advance due to temperature changes during the injection process, resulting in a decrease in fluidity and affecting the continuity and density of subsequent filling.

[0088] The internal cavity temperature affects the stability of the potting material's flowability and curing rhythm: When the internal cavity temperature is maintained within a reasonable range, it can prevent sudden viscosity changes in the potting material due to ambient temperature fluctuations, ensuring consistent material flowability during each injection, predictable liquid level rise patterns, and easy precise control to the intersection position; if the internal cavity temperature is too low, it will accelerate the viscosity rise of the potting material, weakening its flowability, causing the material to flow sluggishly before reaching the target intersection position, resulting in insufficient filling; if the internal cavity temperature is too high, it may accelerate the initial curing of the potting material, making it difficult for subsequently injected material to fuse well with the already injected material, and may also cause internal air bubbles to not be expelled in time due to excessively fast curing speed, affecting the overall structural strength and sealing performance of the potting layer.

[0089] It is understood that step S320 may include, but is not limited to, the following steps:

[0090] Step S410: Determine the theoretical intersection position for the current time based on the set of intersection positions.

[0091] Step S420: If the current liquid level is lower than the theoretical intersection position, perform at least one of the following: increase material temperature, increase injection pressure, increase injection flow rate, and increase internal cavity temperature.

[0092] Step S430: If the current liquid level is greater than the theoretical intersection position, perform at least one of the following: reduce material temperature, reduce injection pressure, reduce injection flow rate, and reduce internal cavity temperature.

[0093] In steps S410 to S430, the theoretical intersection position for the current injection is first determined based on the set of intersection positions. Then, by comparing the current liquid level with the theoretical intersection position, at least one of the following adjustments is made: increasing or decreasing the material temperature, injection pressure, injection flow rate, and internal cavity temperature. This allows for rapid and accurate correction of liquid level deviations during a single injection, ensuring that the potting material injected each time accurately reaches the corresponding theoretical intersection position, avoiding issues such as incomplete coverage of intersection positions or exceeding preset ranges. Simultaneously, by adjusting the adaptability parameters, the fluidity and stability of the potting material are optimized, reducing air bubble residue and ensuring a denser filling at the connection between the resistor tube and the conductive tube, as well as in all gaps. This guarantees the precision and consistency of the potting layer formation, further enhancing the structural robustness and operational stability of the high creepage resistor.

[0094] It is understood that step S320 may also include, but is not limited to, the following steps:

[0095] Step S510: Determine the material constraint range, pressure constraint range, flow velocity constraint range, and internal cavity constraint range according to the parameter constraint rules.

[0096] Step S520: Based on the current material temperature, injection pressure, injection flow rate and cavity temperature, and based on the material constraint range, pressure constraint range, flow rate constraint range and cavity constraint range, obtain the corresponding upward and downward priorities.

[0097] Step S530: Based on the current liquid level information and the set of intersecting positions, and based on parameter constraint rules and priority adjustment or priority adjustment, adjust the material temperature, injection pressure, injection flow rate and internal cavity temperature.

[0098] In steps S510 to S530, the constraint ranges for materials, pressure, flow rate, and internal cavity are clearly defined through parameter constraint rules. This prevents parameter adjustments from exceeding safe and reasonable ranges, which could lead to curing failure of the potting material or damage to the resistor assembly. Furthermore, by combining the current material temperature, injection pressure, injection flow rate, and internal cavity temperature with the matching of each constraint range, corresponding upward and downward adjustment priorities are determined. This approach makes parameter adjustments more targeted, avoiding compatibility conflicts caused by blind adjustments. Finally, by combining the current liquid level information and the set of intersection positions, each parameter is precisely adjusted according to the parameter constraint rules and corresponding priorities. This not only quickly and efficiently corrects liquid level deviations, ensuring that each injected potting material accurately reaches the theoretical intersection position, but also guarantees the scientific and safe nature of parameter adjustments. Simultaneously, it further reduces residual air bubbles, improves the filling density and molding consistency of the potting layer, strengthens the structural strength at the connection between the resistor tube and the conductive tube, and ensures the structural robustness and operational stability of the high creepage resistor.

[0099] It is understood that step S520 may include, but is not limited to, the following steps:

[0100] Step S610: Calculate the deviation between the maximum value and the median value of the current material temperature and the material constraint range, the deviation between the maximum value and the median value of the current injection pressure and the pressure constraint range, the deviation between the maximum value and the median value of the current injection flow rate and the flow rate constraint range, and the deviation between the maximum value and the median value of the current cavity temperature and the cavity constraint range. Calculate the upper limit deviation of the material, the upper limit deviation of the pressure, the upper limit deviation of the flow rate, and the upper limit deviation of the cavity.

[0101] Step S620: Based on the upper limit deviation of material, upper limit deviation of pressure, upper limit deviation of flow rate, and upper limit deviation of cavity, determine the corresponding upward adjustment priority of material temperature, injection pressure, injection flow rate, and cavity temperature.

[0102] Step S630: Calculate the deviation between the minimum and median values ​​of the current material temperature and material constraint range, the deviation between the minimum and median values ​​of the current injection pressure and pressure constraint range, the deviation between the minimum and median values ​​of the current injection flow rate and flow rate constraint range, and the deviation between the minimum and median values ​​of the current cavity temperature and cavity constraint range. Calculate the lower limit deviation of the material, the lower limit deviation of the pressure, the lower limit deviation of the flow rate, and the lower limit deviation of the cavity.

[0103] Step S640: Based on the lower limit deviation of material, lower limit deviation of pressure, lower limit deviation of flow rate, and lower limit deviation of cavity, determine the corresponding downward adjustment priority of material temperature, injection pressure, injection flow rate, and cavity temperature.

[0104] In steps S610 to S640, the deviations of the current material temperature, injection pressure, injection flow rate, and inner cavity temperature from their respective maximum and minimum values ​​relative to the median are calculated. This accurately yields the upper and lower limit deviations of the material, pressure, flow rate, and inner cavity, respectively. This clarifies the upward and downward adjustment priorities for each parameter, ensuring that the priority division is based on objectively quantified deviation data. This clearly reflects the adjustable space of each parameter within the constraint range and the degree of deviation from the median and maximum values ​​of the current state, preventing adjustments from exceeding reasonable ranges and avoiding adaptation conflicts caused by simultaneous, disorderly adjustments of multiple parameters. This makes subsequent parameter adjustments for deviations between the current liquid level and the theoretical intersection position more targeted and logical, ensuring efficient and precise adjustments, quickly correcting liquid level deviations, ensuring accurate filling of the potting material to the target intersection position, reducing air bubble residue, improving the filling density and molding consistency of the potting layer, further strengthening the structural strength of the connection between the resistance tube and the conductive tube, and ensuring the structural robustness and operational stability of the high creepage resistor.

[0105] In one embodiment, taking the calculation of the priority adjustment as an example, the specific formula for calculating the deviation can be:

[0106] ,

[0107] The larger the ratio represented by this deviation, the higher the proportion of upward adjustment space remaining after the current value reaches the median, and the greater the adjustable potential. Assume the preset parameter constraint ranges are as follows: material constraint range (28℃-45℃, median 36.5℃), pressure constraint range (0.2MPa-0.6MPa, median 0.4MPa), flow rate constraint range (3mL / s-9mL / s, median 6mL / s), and cavity constraint range (25℃-32℃, median 28.5℃). The current parameter values ​​are: material temperature 32℃, injection pressure 0.45MPa, injection flow rate 5mL / s, and cavity temperature 30℃.

[0108] The calculation process is as follows:

[0109] Material temperature deviation = |(45-32)| / (45-36.5)×100% = 13 / 8.5×100%≈152.94%;

[0110] Injection pressure deviation = |(0.6-0.45)| / (0.6-0.4)×100%=0.15 / 0.2×100%=75%;

[0111] Injection flow rate deviation = |(9-5)| / (9-6)×100% = 4 / 3×100%≈133.33%;

[0112] Internal cavity temperature deviation = |(32-30)| / (32-28.5×100%=2 / 3.5×100%≈57.14%).

[0113] The parameters are sorted from largest to smallest deviation as follows: material temperature (152.94%) > injection flow rate (133.33%) > injection pressure (75%) > cavity temperature (57.14%). The corresponding adjustment priority is: material temperature > injection flow rate > injection pressure > cavity temperature. This calculation method intuitively quantifies the adjustable potential of each parameter through percentages. For example, a material temperature ratio of 152.94% means that the distance from its current value to its maximum value is more than 1.5 times the distance from the median value to the maximum value, indicating ample room for adjustment. Prioritizing the adjustment of these parameters can more quickly and efficiently correct the deviation between the current liquid level and the theoretical intersection position, while avoiding parameter adjustments exceeding the constraint range and ensuring potting accuracy.

[0114] It is understood that the step of adjusting the pouring parameters in step S170, which provides feedback on the pouring status of each injected potting material, may include, but is not limited to, the following steps:

[0115] Step S710: Obtain the surface flatness of the potting layer and the assembly coaxiality between the outer tube and the resistor assembly after the last injection of encapsulation material.

[0116] Step S720: Adjust the position of the pouring device to inject the potting material according to the surface flatness and assembly coaxiality of the potting layer.

[0117] In steps S710 to S720, by obtaining the surface flatness of the potting layer and the assembly coaxiality between the outer tube and the resistor assembly after the last injection of potting material, the position of the potting material injection device is adjusted in a targeted manner. This can accurately correct any deviations that may have existed in the previous injection position, making the injection of potting material in subsequent production more in line with the assembly requirements of the outer tube and the resistor assembly. This effectively improves the problem of unevenness of the potting layer surface, ensures that the assembly coaxiality of the outer tube and the resistor assembly meets the standards, and avoids poor adhesion between the potting layer and the assembly or component misalignment due to improper injection position. This further improves the molding quality and structural adaptability of the potting layer, strengthens the overall structural robustness of the high creepage resistor, and ensures its reliability and performance stability.

[0118] It is understandable that during the annular groove cutting process, the cutting tool will wear down with each machining cycle. In step S170, the step of adjusting the machining parameters based on the appearance image of the high creepage resistor may include, but is not limited to, the following steps:

[0119] Step S810: Acquire an external image of the high creepage resistor after potting and assembly.

[0120] Step S820: Based on the appearance image, determine the actual depth of each annular groove and the actual distance between each adjacent annular groove.

[0121] Step S830: Based on image modeling, determine the desired depth and desired distance of the annular groove in the high creepage resistor.

[0122] Step S840: Generate a cutting depth correction coefficient based on the average value of several actual depths and the desired depth.

[0123] Step S850: Generate a cutting offset gradient based on several consecutive actual distances and expected distances, and generate a cutting offset correction coefficient based on the cutting offset gradient.

[0124] Step S860: Adjust the processing parameters according to the cutting depth correction coefficient and the cutting offset correction coefficient.

[0125] In steps S810 to S860, by acquiring the appearance image of the high creepage distance resistor after potting and assembly, the actual depth of each annular groove and the actual distance between each adjacent annular groove are accurately determined. Then, the actual depth and distance of the annular groove obtained by image modeling are compared to generate a cutting depth correction coefficient and a cutting offset correction coefficient based on the cutting offset gradient. In this way, the processing parameters are adjusted, which can accurately correct the depth deviation and spacing offset problems that occur in the cutting device during the annular groove cutting process, ensuring that the annular groove depth is consistent and the distance between adjacent annular grooves is uniform. This effectively ensures that the creepage distance of the outer tube meets the design requirements, improves the insulation performance of the high creepage distance resistor, and optimizes the accuracy of subsequent processing parameters through quantitative correction coefficients, reduces product defects caused by cutting deviations, and improves the production consistency and yield of the high creepage distance resistor.

[0126] In step S840, assuming the desired depth of the annular grooves on the outer tube of the high creepage resistor is 0.8 mm, the actual depths of the five annular grooves on the outer tube are obtained through image acquisition and measurement: 0.72 mm, 0.75 mm, 0.73 mm, 0.76 mm, and 0.74 mm. First, the average value of these actual depths is calculated: Average Actual Depth = (0.72 + 0.75 + 0.73 + 0.76 + 0.74) ÷ 5 = 3.7 ÷ 5 = 0.74 mm. Then, a cutting depth correction coefficient is generated. The core calculation logic for the correction coefficient is "Cutting Depth Correction Coefficient = Desired Groove Depth ÷ Average Actual Depth". Substituting the values, we get the Cutting Depth Correction Coefficient = 0.8 ÷ 0.74 ≈ 1.081. Finally, the processing parameters are adjusted using the correction coefficient. The set cutting depth of the subsequent cutting device is equal to the original set cutting depth multiplied by the cutting depth correction coefficient. If the original set cutting depth is 0.8mm, the adjusted set cutting depth is approximately 0.8 × 1.081 ≈ 0.865mm. Through the compensation of this correction coefficient, the actual depth of the ring groove cut subsequently can gradually approach the desired depth, ensuring the consistency of the ring groove depth.

[0127] In step S850, the single offset between each consecutive actual distance and the desired distance is calculated. A cutting offset gradient is generated based on the single offset, reflecting the changing trend of consecutive single offsets. The average value of the offset gradient is then calculated to comprehensively reflect the overall offset change pattern. Subsequently, the cutting offset correction coefficient is generated using the formula "Cutting Offset Correction Coefficient = Desired Distance ÷ (Desired Distance + Average Offset Gradient + Average Single Offset)". The processing parameters are adjusted using the correction coefficient. The set distance between adjacent annular grooves of the subsequent cutting device is equal to the original set distance × the cutting offset correction coefficient. If the original set distance is 5.0 mm, the adjusted set distance is approximately 5.0 × 1.068 ≈ 5.34 mm. Through the compensation of this correction coefficient, the spacing deviation caused by the offset gradient can be gradually offset, allowing the actual distance of the subsequent annular grooves to approach the desired distance.

[0128] In a second aspect, this application also provides a production apparatus for high creepage resistors, comprising: at least one memory; at least one processor; at least one program; the program is stored in the memory, and the processor executes the at least one program to implement a production control method for high creepage resistors as described in any embodiment of the first aspect.

[0129] In this device, an image model of the high creepage distance resistor is first acquired to determine the processing and pouring parameters. Then, a cutting device is controlled to tap the first and second ends of the outer tube to form internal threads, and annular grooves are cut on the outer side of the outer tube. The resistor assembly with the first electrode block is then installed into the outer tube via a threaded connection. A pouring device repeatedly injects potting material from the second end of the outer tube to form a potting layer. Finally, the second electrode block is threaded to the second end of the outer tube and connected with wires. Simultaneously, the device acquires an image of the high creepage distance resistor and feedback information on the potting status of each injection, dynamically adjusting the processing and pouring parameters. This method accurately sets initial parameters through image modeling and optimizes them by combining real-time status feedback during production. It effectively solves the problem that existing fixed parameters cannot adapt to real-time production changes, avoiding substandard outer tube processing accuracy and poor potting layer formation. This ensures the consistency of creepage distance and structural robustness of the high creepage distance resistor, improving product quality stability.

[0130] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs, non-transitory computer-executable programs, and signals, such as the program instructions / signals corresponding to the processing module in the embodiments of this application. The processor executes various functional applications and data processing by running the non-transitory software programs, instructions, and signals stored in the memory, thereby implementing the production control method for high creepage resistors in the above-described method embodiments.

[0131] The memory may include a program storage area and a data storage area. The program storage area may store the operating system and application programs required for at least one function; the data storage area may store relevant data such as those related to the production control method for the aforementioned high creepage resistor. Furthermore, the memory may include high-speed random access memory and non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, the memory may optionally include memory remotely located relative to the processor, and these remote memories can be connected to the processing module via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0132] One or more signals are stored in a memory, and when executed by one or more processors, the production control method for high creepage resistors in any of the above method embodiments is executed.

[0133] Thirdly, embodiments of this application provide a computer-readable storage medium storing a computer program that is executed by one or more processors, enabling the one or more processors to perform the production control method for high creepage resistors described in the above method embodiments.

[0134] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0135] Based on the above description of the embodiments, those skilled in the art will understand that all or some of the steps and systems in the methods disclosed above can be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all physical components can be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit. Such software can be distributed on a computer-readable medium, which may include computer storage media (or non-transitory media) and communication media (or transient media). As is known to those skilled in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable signals, data structures, program modules, or other data). Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible by a computer. Furthermore, as is known to those skilled in the art, communication media typically contain computer-readable signals, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and may include any information delivery medium.

[0136] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0137] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0138] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0139] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0140] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes multiple instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing programs, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0141] The embodiments of this application have been described in detail above with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application.

Claims

1. A production control method for high creepage distance resistors, characterized in that, A production equipment for high creepage resistors, the production equipment including a cutting device and a casting device, and the production control method including: Image modeling of high creepage resistors; Based on image modeling, the processing parameters and grouting parameters are determined; According to the processing parameters, the cutting device is controlled to tap the first and second ends of the hollow outer tube to form internal threads, and to perform annular groove cutting on the outer side of the outer tube. Assemble one end of the first electrode block and the resistor assembly, and thread the first electrode block to the first end of the outer tube body to install the resistor assembly into the outer tube body. The other end of the resistor assembly is led out from the second end of the outer tube body through a wire. According to the pouring parameters, the pouring device is controlled to inject potting material multiple times from the second end of the outer tube to form a potting layer inside the outer tube. The second electrode block is threaded to the second end of the outer tube and connected to the wire leading out from the other end of the resistor assembly to form the high creepage resistor. The appearance image of the high creepage resistor and the potting status feedback information of each injection of potting material are obtained, and the processing parameters and the potting parameters are adjusted according to the appearance image and the potting status feedback information.

2. The production control method for high creepage resistors according to claim 1, characterized in that, The resistor assembly includes a plurality of resistive transistors and conductive transistors, with adjacent resistive transistors connected through the conductive transistors. Based on image modeling, irrigation parameters are determined, including: Based on the image modeling, determine the set of intersection positions between each of the resistor tubes and the conductive tubes, as well as the set of gaps between the resistor tubes, the conductive tubes and the inner wall of the outer tube; The number of pouring operations and the amount of material injected each time are determined based on the set of intersecting positions and the set of gaps. The pouring parameters are generated by integrating the number of pours, the amount of material injected, the initial material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature.

3. The production control method for high creepage resistors according to claim 2, characterized in that, Acquire filling status feedback information for each injection of filling material, and adjust the filling parameters based on the filling status feedback information, including: After each injection of potting material, the current liquid level inside the outer tube is obtained; Based on the current liquid level and the set of intersecting positions, and according to preset parameter constraint rules, adjust the material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature; The pouring parameters are adjusted based on the new material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature.

4. The production control method for high creepage resistors according to claim 3, characterized in that, The step of adjusting the material temperature, the injection pressure, the injection flow rate, and the cavity temperature based on the current liquid level and the set of intersecting positions, and according to preset parameter constraint rules, includes: Based on the set of intersection positions, determine the theoretical intersection position for the current iteration; If the current liquid level is lower than the theoretical intersection position, perform at least one of the following actions: increase the material temperature, increase the injection pressure, increase the injection flow rate, and increase the internal cavity temperature. If the current liquid level is greater than the theoretical intersection position, perform at least one of the following actions: reduce the material temperature, reduce the injection pressure, reduce the injection flow rate, and reduce the internal cavity temperature.

5. The production control method for high creepage resistors according to claim 3, characterized in that, The step of adjusting the material temperature, the injection pressure, the injection flow rate, and the cavity temperature based on the current liquid level and the set of intersecting positions, and according to preset parameter constraint rules, includes: Based on the parameter constraint rules, determine the material constraint range, pressure constraint range, flow velocity constraint range, and internal cavity constraint range; Based on the current material temperature, injection pressure, injection flow rate, and cavity temperature, and based on the material constraint range, pressure constraint range, flow rate constraint range, and cavity constraint range, a one-to-one corresponding upward and downward adjustment priority is obtained; Based on the current liquid level and the set of intersecting positions, and according to the parameter constraint rules and the up-adjustment priority or the down-adjustment priority, the material temperature, the injection pressure, the injection flow rate, and the internal cavity temperature are adjusted.

6. The production control method for high creepage resistors according to claim 5, characterized in that, The step involves obtaining corresponding upward and downward adjustment priorities based on the current material temperature, injection pressure, injection flow rate, and cavity temperature, and based on the material constraint range, pressure constraint range, flow rate constraint range, and cavity constraint range. This includes: Calculate the deviation between the current maximum value and the median value of the material temperature and the material constraint range, the deviation between the current maximum value and the median value of the injection pressure and the pressure constraint range, the deviation between the current maximum value and the median value of the injection flow rate and the flow rate constraint range, and the deviation between the current maximum value and the median value of the cavity temperature and the cavity constraint range. Calculate the upper limit deviation of the material, the upper limit deviation of the pressure, the upper limit deviation of the flow rate, and the upper limit deviation of the cavity. Based on the upper limit deviation of the material, the upper limit deviation of the pressure, the upper limit deviation of the flow rate, and the upper limit deviation of the cavity, the upward adjustment priority of the material temperature, the injection pressure, the injection flow rate, and the cavity temperature is determined one by one; Calculate the deviation between the minimum and median values ​​of the current material temperature and the material constraint range, the deviation between the minimum and median values ​​of the current injection pressure and the pressure constraint range, the deviation between the minimum and median values ​​of the current injection flow rate and the flow rate constraint range, and the deviation between the minimum and median values ​​of the current cavity temperature and the cavity constraint range. Calculate the lower limit deviation of the material, the lower limit deviation of the pressure, the lower limit deviation of the flow rate, and the lower limit deviation of the cavity. Based on the lower limit deviation of the material, the lower limit deviation of the pressure, the lower limit deviation of the flow rate, and the lower limit deviation of the cavity, the down-adjustment priority of the material temperature, the injection pressure, the injection flow rate, and the cavity temperature is determined one by one.

7. The production control method for high creepage resistors according to claim 1, characterized in that, Acquire filling status feedback information for each injection of filling material, and adjust the filling parameters based on the filling status feedback information, including: Obtain the surface flatness of the potting layer after the last injection of encapsulating material, and the assembly coaxiality between the outer tube and the resistor assembly; Adjust the position of the pouring device to inject the potting material according to the surface flatness and assembly coaxiality of the potting layer.

8. The production control method for high creepage resistors according to claim 1, characterized in that, Acquiring an external image of the high creepage resistor and adjusting the processing parameters based on the external image includes: Take an external image of the high creepage resistor after potting and assembly; Based on the appearance image, determine the actual depth of each annular groove and the actual distance between each adjacent annular groove; Based on the image modeling, the desired depth and desired distance of the annular groove in the high creepage resistor are determined; A cutting depth correction coefficient is generated based on the average of several actual depths and the desired depth. Based on several consecutive actual distances and the desired distance, a cutting offset gradient is generated, and a cutting offset correction coefficient is generated based on the cutting offset gradient; The processing parameters are adjusted based on the cutting depth correction coefficient and the cutting offset correction coefficient.

9. A production equipment for high creepage distance resistors, characterized in that, include: At least one memory; At least one processor; At least one program; The program is stored in the memory, and the processor executes at least one of the programs to implement the production control method for high creepage resistors as described in any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer-executable program for performing the production control method for a high creepage resistor as described in any one of claims 1 to 8.

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