Reflector, chamber apparatus, semiconductor processing system and material layer deposition method

Abstract

A reflector includes a body having a first surface and a second surface separated by a body thickness, the first surface having a first aperture and the second surface having a reflective material and a second aperture. The apertures are fluidly coupled by a passage extending through the body, with one aperture positioned closer to the side than the other aperture. The channel is angled to flow coolant from the second aperture at an inclined flow angle relative to the reflector body. A chamber apparatus, a semiconductor processing system, and a material layer deposition method using the reflector are also described.

Description

Technical Field

[0001] This disclosure generally relates to depositing a material layer onto a substrate, and more specifically to controlling the temperature within a semiconductor processing system during the deposition of a material layer onto a substrate. Background Technology

[0002] Films are typically deposited onto substrates, such as during the fabrication of semiconductor devices. Film deposition is generally achieved by supporting the substrate in a reaction chamber, heating the substrate to the desired deposition temperature, and bringing the substrate into contact with a material layer precursor under selected environmental conditions (e.g., temperature and pressure) to deposit the film onto the substrate. Once the film has achieved the desired properties (e.g., thickness), the substrate is typically removed from the reaction chamber and further processing is carried out, which is suitable for devices fabricated using films.

[0003] In some deposition operations, reflectors can be used to heat the substrate, for example, in conjunction with a heat source included in the reaction chamber. The reflector can be supported outside the reaction chamber. The reflector can further cooperate with a coolant source to control the temperature of the reaction chamber during film deposition onto the substrate.

[0004] Such systems and methods are generally considered suitable for their intended purpose. However, there is still a need in the art for improved reflectors, reaction chambers including reflectors, semiconductor processing systems, and methods for depositing material layers onto substrates using reaction chambers including reflectors and semiconductor processing systems. This disclosure provides solutions to this need. Summary of the Invention

[0005] The following description of the invention presents a simplified overview of certain features. This overview is not a comprehensive summary and is not intended to identify key or important elements.

[0006] According to various embodiments of the present disclosure, a reflector is provided, including a reflector body having: a first surface partially defined by a side surface of the reflector body and defining a first surface aperture therein; and a second surface also partially defined by a side surface of the reflector body and including a reflective material, the second surface being separated from the first surface by a thickness of the reflector body, the second surface defining a second surface aperture therein, the method comprising fluidly connecting the second surface aperture to the first surface aperture via a channel extending through the thickness of the reflector body, one of the first surface aperture and the second surface aperture being configured to be closer to a side surface of the reflector than the other of the first surface aperture and the second surface aperture, and at least a portion of the channel being angled relative to at least one of the first surface and the second surface to allow coolant to flow out from the second surface aperture at a flow angle inclined relative to the reflector body.

[0007] In some embodiments, a first surface of the reflector body defines a plurality of extended grooves that extend toward the second surface and partially through the thickness of the reflector body.

[0008] In some embodiments, the reflector body is formed of a copper-containing material, and the reflective material includes gold.

[0009] In some embodiments, the reflector body defines a port extending through the thickness of the reflector body, which optically couples a second surface of the reflector body along an optical axis substantially parallel to the side of the reflector body, wherein the channel is inclined relative to the optical axis.

[0010] In some embodiments, the reflector body includes a first longitudinal side and a second longitudinal side disposed substantially orthogonal to the sides, and a first surface hole and a second hole extend in a direction between the first longitudinal side and the second longitudinal side, wherein the first surface hole and the second surface hole thereby cooperate with a channel to define an angled slot extending through the reflector body.

[0011] In some embodiments, the first surface hole is larger than the second surface hole.

[0012] In some embodiments, the channel narrows between the first surface hole and the second surface hole.

[0013] In some embodiments, a portion of the channel extends through the thickness of the reflector body at an angle relative to the surface normal.

[0014] In some embodiments, the angle is approximately 5° relative to the surface normal.

[0015] In some embodiments, the second portion of the channel narrows toward the center of the channel as it extends through the thickness of the reflector body.

[0016] In some embodiments, a first surface aperture and a second surface aperture define a slot within the reflector body, the slot having a primary dimension and a secondary dimension, the primary dimension being substantially parallel to the side surface of the reflector body.

[0017] In some embodiments, the reflector body is further configured to overlap with the ribbed outer surface of the wall of the chamber body of the semiconductor processing system, wherein the channel is configured to guide coolant into the gap between adjacent ribs defined on the ribbed outer surface of the wall of the chamber body.

[0018] In some embodiments, at least one slot extending through the reflector body is configured to receive a removable quartz rod operable to block airflow through at least one slot.

[0019] In some embodiments, the number and arrangement of quartz rods inserted into the slot are adjustable to regulate the temperature inside the chamber during the deposition process.

[0020] In some embodiments, the reflector body is formed as a single piece having only the necessary slots for process control, and unused slots are omitted.

[0021] In some embodiments, the method further includes one or more pyrometer ports extending through the reflector body, each of the one or more pyrometer ports being configured to optically couple a pyrometer to a chamber for temperature monitoring.

[0022] According to various embodiments of the present disclosure, a chamber device including the disclosed reflector is provided, the chamber device comprising: a chamber body spaced apart from the reflector; a substrate support disposed within the chamber body and supported for rotation about a rotation axis; and an array of heater elements disposed between the chamber body and the reflector, wherein the channels are inclined relative to a substrate mounting plane defined by the substrate support, the method comprising this.

[0023] In some embodiments, the reflector includes one or more removable quartz rods inserted into a selected slot to control airflow and chamber body temperature.

[0024] In some embodiments, the chamber temperature is maintained in the range of about 550°C to about 600°C during operation.

[0025] In some embodiments, the chamber body extends between an injection end and a longitudinally opposite discharge end, wherein the chamber body has a plurality of ribs extending laterally around the chamber body and longitudinally spaced between the injection end and the discharge end, and the channel is inclined relative to the plurality of ribs.

[0026] In some embodiments, the substrate support includes a base structure configured to receive a semiconductor substrate, and the heater element array is configured to direct electromagnetic radiation toward the chamber body.

[0027] In some embodiments, the reflector is configured to reduce or eliminate the chamber coating during the high-temperature deposition process.

[0028] In some embodiments, the reflector includes one or more removable quartz rods inserted into a selected slot to control airflow and chamber body temperature.

[0029] In some embodiments, the chamber temperature is maintained in the range of about 550°C to about 600°C during operation.

[0030] According to various embodiments of the present disclosure, a semiconductor processing system is provided, which includes a reflector as disclosed, the semiconductor processing system including a chamber arrangement. In some embodiments, the semiconductor processing system includes a chamber body spaced apart from the reflector, an array of heater elements supported between a second surface of the reflector body and the chamber body, and a substrate support disposed inside the chamber body and supported therein for rotation about a rotation axis.

[0031] In some embodiments, the semiconductor processing system further includes one or more heater elements disposed between the chamber body and the reflector.

[0032] According to various embodiments of the present disclosure, a method for depositing a material layer is provided, the method comprising: at a chamber apparatus, the chamber apparatus including a chamber body and a reflector spaced apart from the chamber body; the reflector including a reflector body having: a first surface partially defined by a side surface of the reflector body and defining a first surface aperture therein; a second surface also partially defined by a side surface of the reflector body and including a reflective material, the second surface being separated from the first surface by a thickness of the reflector body, the second surface defining a second surface aperture therein, the second surface aperture being fluidly connected to the first surface aperture via a channel extending through the thickness of the reflector body, one of the first surface aperture and the second surface aperture being configured to be larger than the first surface aperture. The method includes placing a substrate within a chamber body; heating the substrate using an array of heater elements disposed between the reflector and the chamber body, at least partially using electromagnetic radiation emitted by the heater element array in a direction substantially opposite to the substrate and reflected by the second surface of the reflector body; contacting the substrate with a material layer precursor such that a material layer is deposited onto the substrate; and draining coolant from the second surface aperture at a flow angle inclined relative to the reflector body, thereby partially cooling the chamber body by the coolant draining from the second surface aperture during the material layer deposition onto the substrate.

[0033] In some embodiments, the method further includes adjusting the number and arrangement of quartz rods in the slot of the inserted reflector to regulate the chamber body temperature during the deposition process.

[0034] In some embodiments, the chamber body temperature is maintained in the range of about 550°C to about 600°C, and the chamber coating is reduced or eliminated.

[0035] In some embodiments, the method further includes: the outflow of coolant also includes cooling a portion of the interior of the chamber body during the deposition of the material layer onto the substrate.

[0036] According to various embodiments of the present disclosure, a reflector for a semiconductor processing chamber is provided, the reflector comprising: a reflector body having a plurality of slots extending through a thickness of the reflector body; a plurality of quartz rods removably inserted into selected slots, each of the plurality of quartz rods being configured to block airflow through a corresponding slot; wherein the number and arrangement of the quartz rods are adjustable to regulate the temperature within the semiconductor processing chamber during a deposition process.

[0037] In some embodiments, the reflector body is formed as a single piece having only the necessary slots for process control, and unused slots are omitted.

[0038] In some embodiments, the reflector further includes one or more pyrometer ports extending through the reflector body, each of the one or more pyrometer ports being configured to optically couple a pyrometer to a semiconductor processing chamber for temperature monitoring. In some embodiments, the temperature of the semiconductor processing chamber is maintained in the range of about 550°C to 600°C during operation.

[0039] In addition to one or more of the features described above, or as an alternative, another example of the method may include: the outflow of coolant also includes cooling a portion of the interior of the chamber body during the deposition of the material layer onto the substrate.

[0040] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0041] Some features are shown in the accompanying drawings by way of example rather than limitation. In the drawings, the same reference numerals denote similar elements.

[0042] Figure 1 A partial schematic diagram of an example semiconductor processing system is depicted.

[0043] Figure 2 An example cooling kit depicting a semiconductor processing system.

[0044] Figure 3 A portion of the example chamber setup and cooling kit is depicted.

[0045] Figure 4 Depicting Figure 1 A first alternative view of a part of a semiconductor processing system.

[0046] Figure 5 Depicting Figure 1 A second alternative view of a part of a semiconductor processing system.

[0047] Figure 6A An example top reflector is depicted.

[0048] Figure 6B Depicting Figure 6A The example is the reflective surface side of the top reflector.

[0049] Figure 7 Depicting Figure 6A and 6B Example of a cross-sectional view of the top reflector.

[0050] Figure 8 An example top reflector is depicted positioned above the top wall of the heater array and the main chamber body.

[0051] Figure 9 An alternative example of a top reflector is depicted.

[0052] Figure 10 An alternative example of a top reflector is depicted.

[0053] Figure 11 Example methods related to the reflectors in this paper are shown. Detailed Implementation

[0054] The accompanying drawings, which form part of this disclosure, illustrate examples of this disclosure. It should be understood that the examples shown in the drawings and / or discussed herein are non-exclusive, and there are other examples of how this disclosure may be practiced.

[0055] Reference will now be made to the accompanying drawings, wherein the same reference numerals identify similar structural features or aspects disclosed in this subject matter. Figure 1 A partial schematic diagram of an example semiconductor processing system 100 including a reflector 202 according to this disclosure is depicted. Other examples of reflectors, chamber devices including reflectors, semiconductor processing systems, material layer deposition methods, and associated cooling kits or aspects thereof are shown. Figures 2 to 11 The systems and methods described herein can be used to control the temperature of a chamber body in a chamber apparatus included in a semiconductor processing system, such as during the deposition of a silicon-containing material layer epitaxially with an underlying substrate using chemical vapor deposition (CVD) techniques during the fabrication of a semiconductor device. However, it should be understood and recognized that this disclosure is not limited to any particular type of material layer or deposition technique, nor is it limited to material layer deposition in general.

[0056] refer to Figure 1The semiconductor processing system 100 may include a chamber arrangement 101, which includes a chamber body 102, an injection flange 104, an exhaust manifold 106, and a heater element 108. The semiconductor processing system 100 may also, or alternatively, include a first precursor source 110, one or more second precursor sources 112, a purge gas / carrier gas source 114, and a halide source 116. Additionally or alternatively, the semiconductor processing system 100 may also include a substrate support 118, a support member 120, a shaft 122, and a drive module 124. Although specific example arrangements of the chamber arrangement 101 (e.g., a cold-wall crossflow chamber arrangement) have been shown and described, it should be understood and recognized that semiconductor processing systems having other types of chamber arrangements may also benefit from this disclosure.

[0057] The chamber body 102 may have an injection end 126 and a longitudinally opposed discharge end 128 substantially opposite to the injection end 126, and an interior 130. The interior 130 of the chamber body 102 may be defined by: a top wall 132 extending between the injection end 126 and the discharge end 128 of the chamber body 102; a bottom wall 134 below the top wall 132 and extending between the injection end 126 and the discharge end 128 of the chamber body 102; and a first side wall (e.g., Figure 4 The sidewall 136 shown extends between the lateral edges of the top wall 132 and the bottom wall 134 and / or connects the lateral edges to each other; the laterally opposite second sidewall (e.g. Figure 4 The sidewall 138 shown extends between the opposing lateral edges of the top wall 132 and the bottom wall 134 and / or connects the lateral edges to each other. In the example configuration and as... Figure 1 As shown, the top wall 132 and / or the bottom wall 134 may be ribbed. For example, see reference... Figure 1 The top wall 132 and / or bottom wall 134 may include a plurality of ribs 154 extending from their outer surfaces and laterally surrounding the chamber body 102. The ribs 154 are longitudinally spaced apart from each other between the injection end 126 and the discharge end 128 of the chamber body 102, with laterally adjacent ribs defining a gap 103 therebetween. In some example configurations, the chamber body 102 or a portion thereof may be formed of a substantially transparent material, such as a material transparent to electromagnetic radiation in the infrared band, like a ceramic material such as fused silica or quartz. A substantially transparent material can transmit electromagnetic radiation, for example, emitted by the heater element 108. A substrate 180 (e.g., a wafer) may be disposed and / or supported within the chamber body 102. For example, heater element 108 and / or an array of heater elements (e.g., Figure 8The heater element array 874 shown heats the substrate 180. According to some example configurations, at least a portion of the chamber body 102 may be formed of quartz. As described, the top wall 132 and / or bottom wall 134 of the chamber body 102 may include ribs 154. Ribs 154 may extend outward from one or more of the top wall 132 and bottom wall 134. Ribs 154 may provide structural support to the chamber body 102 and / or allow the interior 130 of the chamber body 102 to be maintained at a relatively low pressure relative to the external environment. In alternative example configurations, one or more of the ribs 154 in the top wall 132 and bottom wall 134 may be omitted.

[0058] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or material layers (e.g., films) can be formed. Substrates can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. Substrates can be in any form, such as (but not limited to) powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes, such as 300 mm wafers. Substrates can be formed from semiconductor materials, including, for example, silicon (Si), silicon-germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). Substrates can include patterned or unpatterned materials, such as so-called blanket substrates. As an example, powder-type substrates can have applications for pharmaceutical manufacturing. Porous substrates can include one or more polymers. Examples of workpieces include medical devices (e.g., stents and injectors), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells, etc. A continuous substrate may extend beyond the boundaries of a processing chamber where a deposition process takes place. In some processes, the continuous substrate may move through the processing chamber, allowing the process to continue until the end of the substrate is reached. A continuous substrate can be supplied from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic or polymer fibers). The continuous substrate may also include a carrier or sheet on which one or more discontinuous substrates are mounted.

[0059] A substrate support 118 may be disposed within and supported therein at the interior 130 of the chamber body 102 for rotation about a rotation axis 144, and may include a base structure. The substrate support 118 may be supported by a support member 120. The substrate support 118 may be disposed along and / or may include a rotation axis 144 relative to the support member 120. The substrate support 118 may be configured to be fixedly rotatable relative to the support member 120. The support member 120 may be fixedly rotatable relative to a shaft 122. The shaft 122 may be supported for rotation about the rotation axis 144. The shaft 122 may extend through the bottom wall 134 of the chamber body 102 and may couple the substrate support 118 and the support member 120 to a drive module 124. The drive module 124 may be operatively connected to the substrate support 118, for example, via the shaft 122 and the support member 120. The drive module 124 may be configured to rotate the substrate support 118 about a rotation axis 144, for example, during the deposition of the material layer 182 onto the substrate 180, via the shaft 122 and the support member 120. The substrate 180 may include a wafer, such as a semiconductor wafer. The material layer 182 may include an epitaxial material layer, such as a silicon-containing and / or germanium-containing material layer. It is also contemplated, according to certain example configurations, that the material layer 182 may be, for example, a thick epitaxial material layer formed during the fabrication of a power electronic device. Example power devices may include insulated-gate bipolar transistor semiconductor devices. A “thick” layer may include a layer having a thickness greater than 25 micrometers, greater than 50 micrometers, greater than 75 micrometers, greater than 100 micrometers, or between about 25 micrometers and about 100 micrometers.

[0060] An exhaust manifold 106 may be connected to an exhaust end 128 of the chamber body 102. The exhaust manifold 106 may be configured to connect the chamber body 102 to an exhaust source, such as a scrubber. In some example configurations, the chamber body 102 may include an exhaust flange extending outward from and around a wall of the chamber body 102. The exhaust manifold 106 may be connected to the exhaust flange. An injection flange 104 may be connected to an injection end 126 of the chamber body 102. The injection flange may connect a first precursor source 110, one or more second precursor sources 112, a purge gas / carrier gas source 114, and / or a halide source 116 to the chamber body 102. In some example configurations, the chamber body 102 may include an injection flange extending outward from and around the injection end 126 of the chamber body 102. One or more of the chamber body 102, injection flange 104, and exhaust manifold 106 may be substantially as shown and described in U.S. Patent Application Publication No. 2010 / 0116207A1 entitled “Reaction Chamber”, filed November 5, 2009, the contents of which are incorporated herein by reference in their entirety.

[0061] The first precursor source 110 may be fluidly coupled to the chamber body 102 via an injection flange 104. The first precursor source 110 may be further configured to provide a first precursor 146 to the chamber body 102 (e.g., to the interior 130 of the chamber body 102). In some example configurations, the first precursor 146 may include a silicon-containing precursor. As a non-limiting example, examples of silicon-containing precursors may include silanes (SiH4), dichlorosilanes (H2SiCl2), trichlorosilanes (HCl3Si), and higher-order silane compounds, such as tetramethylsilane (Si(CH3)4).

[0062] One or more second precursor sources 112 may be fluidly coupled to the chamber body 102 via injection flange 104. One or more second precursor sources 112 may be configured to provide one or more second precursors 148 to the chamber body 102 (e.g., to the interior 130 of the chamber body 102). In some example configurations, one or more second precursors 148 may include dopants, such as precursors containing n-type and / or p-type dopants. One or more second precursors 148 may include, for example, germanium precursors. As a non-limiting example, examples of germanium precursors may include germanane (GeH4), germanium tetrafluoride (GeF4), and hydrogenated tributylgermanium ([CH3(CH2)3]3GeH).

[0063] The purge gas / carrier gas source 114 can be fluidly coupled to the chamber body 102 via the injection flange 104. The purge gas / carrier gas source 114 can be configured to provide purge gas / carrier gas 150 to the chamber body 102 (e.g., to the interior 130 of the chamber body 102). In some examples, the purge gas / carrier gas 150 may include hydrogen (H2), helium (He), nitrogen (N2), argon (Ar), and / or krypton (Kr), or mixtures thereof.

[0064] A halide source 116 can be fluidly coupled to the interior 130 of the chamber body 102 via an injection flange 104. The halide source 116 can be configured to supply a halide 152 to the chamber body 102 (e.g., the interior 130 of the chamber body 102). In some examples, the halide 152 may include chlorine. For example, the halide 152 may include hydrochloric acid (HCl) or chlorine (Cl2). Material layer 182 can be facilitated and / or aided in deposition onto the substrate 180 by supporting the substrate 180 within the chamber body 102 on a substrate support 118, heating the substrate 180 to a predetermined material layer deposition temperature, rotating the substrate 180 about a rotation axis 144 using the substrate support 118, and allowing a first precursor 146 and / or a second precursor 148 to flow through the substrate 180. Material layer 182 can be deposited onto the substrate 180 as the first precursor 146 and / or the second precursor 148 flow through the substrate 180. Material layer 182 can be deposited on substrate 180 according to the temperature of substrate 180. Heating of substrate 180 can be achieved via heating elements (e.g., heater element 108) or an array of heating elements. Heating elements and / or arrays of heating elements can be positioned outside the chamber body 102 (e.g., Figure 8 The heater element 108 or heater element array 874 shown. The heater element 108 or heater element array may be arranged above the top wall 132 of the chamber body 102. Alternatively or additionally, the heater element 108 and / or heater element array may be radiatively coupled to the substrate support 118 (and substrate 180) via the walls of the chamber body 102 (e.g., top wall 132 and / or bottom wall 134). A top reflector 202 (e.g., part of the cooling kit 200) (e.g.) Figure 6A-8 Top reflector 202A, Figure 9 Top reflector 202B and / or Figure 10 A top reflector 202C may be disposed above the heater element 108. The top reflector 202 may be configured to cooperate with the heater element 108, for example, to reflect electromagnetic radiation emitted from the heater element 108 toward the chamber body 102 in a direction substantially opposite to the chamber body 102, for example, to radiatively heat the substrate support 118 and / or the substrate 180. An example configuration of the chamber body 102 may be arranged substantially as shown and described in U.S. Application Publication No. 2018 / 0363139A1, filed April 25, 2018, entitled “Semiconductor Processing Apparatus and Methods for Calibrating a Semiconductor Processing Apparatus,” the entire disclosure of which is incorporated herein by reference.

[0065] The semiconductor processing system 100 may also include a first pyrometer 158. Alternatively, the system 100 may also include one or more second pyrometers 160. The pyrometer 158 and the one or more second pyrometers 160 may be coupled to the chamber body 102 via a top reflector 202 (e.g., optical). Alternatively, the pyrometers 158 and 160 may be configured to record and / or report the temperature of one or more of the chamber body 102, the substrate support 118, and / or the substrate 180.

[0066] As can be understood from this disclosure, temperature differences on portions of the chamber body 102 and / or substrate 180 may cause and / or result in differences in the deposition rate and / or the amount of material layer 182 deposited. Therefore, it may be desirable to increase temperature uniformity on one or more portions of the chamber body 102 and / or substrate 180 during deposition. To improve cooling uniformity on portions of the chamber body 102 and / or substrate 180, for example to direct coolant towards chamber location L, where the temperature would otherwise tend to be higher than the rest of the chamber body 102, thus tending to promote the development of the inner surface deposit A, a reflector 202 is provided.

[0067] In the illustrated example, reflector 202 includes a reflector body 203 having a first surface 205 and a second surface 207. The first surface 205 is partially defined by a side surface 209 of the reflector body 203 and defines a first surface aperture 211 therein. The second surface 207 is similar to the first surface 205 and is also defined by the side surface 209 of the reflector body 203. The second surface 207 further separates from the first surface 205 by a thickness 213 of the reflector body 203. Figure 3 As shown), including reflective material 215 ( Figure 3 (as shown), and defines a second surface hole 217 therein, which is fluidly connected to the first surface hole 211 via a channel 219 extending through a thickness 213 of the reflector body 203. It is anticipated that one of the first surface hole 211 and the second surface hole 217 is positioned closer to the side 209 defining both the first surface 205 and the second surface 207 of the reflector body 203 than the other of the first surface hole 211 and the second surface hole 217. The channel 219 is thus configured to allow coolant 384 to flow from the second surface hole 217 at a flow angle 230 inclined relative to the reflector body 203. Figure 3 (As shown).

[0068] In some examples, the flow angle 230 may cause the channel 219 to be inclined relative to one or more ribs 154 of the chamber body 102, for example, so that the coolant 384 flowing from the second surface hole 217 is guided toward the gap 103 defined between two longitudinally adjacent ribs 154. In this respect, the flow angle defined by the channel 219 may be between about 5° and about 85°, or between about 5° and about 45°, or even between about 5° and about 25°. Advantageously, angles within these ranges enable the coolant to be guided into the gap in the chamber body, which has irregularly spaced ribs and laterally extending heater elements arranged at substantially uniform longitudinal spacing. According to some examples, the first surface hole 211 and the second surface hole 217 may have a main dimension 223 ( Figure 6A (as shown) and secondary size 225 ( Figure 6A (As shown). The main dimension 223 may be substantially parallel to the side 209 of the reflector body 203. The first surface hole 211 and the second surface hole 217 cooperate with the channel 219 to define a slot extending through the reflector body 203 to guide coolant 304 into the gap 103 between longitudinally adjacent ribs 154, and more specifically, an angled slot.

[0069] In the example shown, the reflector body 203 is formed of a copper-containing material 221, as a non-limiting example, such as brass or bronze. In such an example, the reflective material 215 may include a gold layer deposited onto the reflector body 203, for example, directly deposited onto the copper-containing material 221 or deposited onto an intermediate material, which may include silver and / or nickel. It is anticipated that the reflector body 203 may be generally planar in outline. It is also anticipated that the shape of the reflector body 203 may be rectangular.

[0070] In the example shown, the reflector body 203 also defines a port 227 therethrough. Port 227 is intended to extend through the thickness 213 of the reflector body 203, thereby optically coupling a second surface 207 of the reflector body 203 to a first surface 205 of the reflector body 203. It is also conceivable that port 227 may define an optical axis 229 therethrough. Optical axis 229 may be substantially parallel to the side surface 209 of the reflector body 203 and / or substantially orthogonal to the heater element 108 and the upper wall of the chamber body 102. A pyrometer 158 may be registered to port 227 such that pyrometer 158 is optically coupled along optical axis 229 through reflector 202 to the chamber body 102 and / or the interior 130 of the chamber body 102. Channel 219 may be tilted relative to optical axis 229.

[0071] Figure 2 An example cooling kit 200, including a reflector 202, is depicted for use in a semiconductor processing system 100, for example, to upgrade the semiconductor processing system 100 to improve cooling. Reference Figure 2The cooling kit 200 can be configured and / or arranged to substantially maintain and / or affect the top wall of the chamber body 102 (e.g., Figure 1 The temperature on the surface (e.g., inner surface) of the top wall 132. Alternatively, the cooling kit may be configured and / or arranged to maintain and / or influence the temperature inside the chamber body (e.g., the interior 130 of the chamber body 102). The temperature may be less than about 1250 degrees Celsius, less than about 800 degrees Celsius, less than about 750 degrees Celsius, less than about 700 degrees Celsius, less than about 750 degrees Celsius, or less than about 600 degrees Celsius, or may be between about 200 degrees Celsius and about 1250 degrees Celsius. The cooling kit 200 may include a top reflector 202, a first injection end-side reflector 204, and a first discharge end-side reflector 206. The cooling kit 200 may also include a second injection end-side reflector 208, a second discharge end-side reflector 210, and a blower 212. One or more of the reflectors (e.g., top reflector 202, first injection end-side reflector 204, first discharge end-side reflector 206, second injection end-side reflector 208, and second discharge end-side reflector 210) may be configured to limit the coolant (e.g. Figure 3 The coolant 384 shown is in the chamber body (e.g.) Figure 1 The resistance to flow (e.g., static drop) on the exterior of the chamber body 102 shown. The blower 212 may be configured to provide a mass flow (e.g., a relatively high mass flow) of coolant 384 on the exterior of the chamber body 102 and / or on one or more reflectors (e.g., top reflector 202, first injection end-side reflector 204, first discharge end-side reflector 206, second injection end-side reflector 208, and second discharge end-side reflector 210). The top reflector 202 may be further configured toward the top wall of the chamber body 102 (e.g., the top wall of the chamber body 102). Figure 1 The top wall 132 (shown) guides and / or distributes coolant thereon. The top reflector 202 may be configured to guide coolant toward and / or distribute coolant thereon, for example, to influence the inner surface of the top wall 132 of the chamber body 102 (e.g., Figure 1 Temperature changes on the inner surface 176 shown, for example, when the material layer (e.g.) is being transferred... Figure 1 The material layer 182 shown is deposited onto the substrate (e.g., Figure 1 During the period shown on the substrate 180).

[0072] Figure 3 A portion of an example chamber body 102 and a cooling kit 200 is depicted. As described, a substrate support 118 may be disposed within the interior 130 of the chamber body 102 and may be arranged to support the substrate 180, for example, during the deposition of a material layer 182 onto the substrate 180. A heater element 108 or an array of heater elements (e.g., Figure 8The element array 874 shown can be positioned and supported above the chamber body 102. A top reflector 202 can be positioned and supported above the heater element 108. The top reflector 202 can be spaced apart from the chamber body 102 via the heater element 108. A blower 212 can be arranged below the chamber body 102. The blower 212 can be communicated with the chamber body 102, for example, via the top reflector 202 (e.g., pneumatic communication). The blower can be communicated with the chamber body 102 to allow coolant 384 to flow through a portion of the exterior of the chamber body 102.

[0073] Heater element 108 may at least partially extend longitudinally across chamber body 102. Heater element 108 may extend longitudinally through top wall 132, for example, between injection end 126 and discharge end 128 of chamber body 102. Alternatively or additionally, heater element 108 may extend between injection flange 104 and exhaust manifold 106 in a generally forward direction of precursor flow through chamber body 102, for example, to radiatively transfer heat into interior 130 of chamber body 102. Heater element 108 may extend longitudinally across one or more of substrate support 118, outer ring 156 extending around substrate support 118, and chamber body 102. Heater element 108 may include filaments. The filaments may be disposed within a housing (e.g., a cylindrical housing). Alternatively or additionally, heater element 108 may include one of an array of heater elements (e.g., cylindrical heater elements) laterally spaced apart from each other above chamber body 102 and extending longitudinally above chamber body 102. Heater element 108 or an array of heater elements (e.g., cylindrical heater elements) Figure 8 The heater element array 874 shown may be substantially as shown and described in U.S. Application Publication No. 2003 / 0102792A1 entitled “Lamp Design”, filed November 5, 2009, the contents of which are incorporated herein by reference in their entirety.

[0074] Figure 4 Depicting Figure 1 A first alternative view of a portion of the semiconductor processing system 100. Figure 5 A second alternative view depicting a portion of a semiconductor processing system. (Reference) Figure 4 and Figure 5The image shows a portion of the chamber body 102 and a cooling assembly 200, a portion of which includes side reflectors, such as a first injection-side reflector 204, a first discharge-side reflector 206, a second injection-side reflector 208, and a second discharge-side reflector 210. The first injection-side reflector 204 and the second injection-side reflector 208 may be arranged on laterally opposite sides of the injection end 126 of the chamber body 102. The first discharge-side reflector 206 and the second discharge-side reflector 210 may be arranged on laterally opposite sides of the discharge end 128 of the chamber body 102, and may be longitudinally offset from the first injection-side reflector 204 and the second injection-side reflector 208 relative to the general direction in which the precursor flows through the chamber body 102 between the injection flange 104 and the exhaust manifold 106.

[0075] The pneumatic communication of coolant 384 can be achieved through a plurality of gas collection chambers defined between chamber body 102 and blower 212. Supply gas collection chamber 162 may be disposed and / or defined between blower 212 and top reflector 202. Top gas collection chamber 164 may be disposed and / or defined between top reflector 202 and chamber body 102. Return gas collection chamber 166 may be disposed and / or defined between chamber body 102 and blower 212. First transverse gas collection chamber 168 may be disposed and defined between chamber body 102 and first injection end-side reflector 204 and first discharge end-side reflector 206, and second transverse gas collection chamber 170 is defined between second injection end-side reflector 208 and second discharge end-side reflector 210. The supply air chamber 162 is intended to pneumatically connect the blower 212 to the top reflector 202, the top reflector 202 is intended to pneumatically connect the supply air chamber 162 to the top air chamber 164, and the supply air chamber 162 is intended to pneumatically connect the top reflector 202 to the top wall 132 of the chamber body 102. The first transverse gas collection chamber 168 can aerodynamically connect the top gas collection chamber 164 to the first injection end-side reflector 204 and the first discharge end-side reflector 206. The second transverse gas collection chamber 170 can aerodynamically connect the top gas collection chamber 164 to the second injection end-side reflector 208 and the second discharge end-side reflector 210. The first injection end-side reflector 204 and the first discharge end-side reflector 206 can aerodynamically connect the first transverse gas collection chamber 168 to the return gas collection chamber 166, and the second injection end-side reflector 208 and the second discharge end-side reflector 210 can aerodynamically connect the second transverse gas collection chamber 170 to the return gas collection chamber 166. The return gas collection chamber 166 can be aerodynamically connected to the blower 212. Although a closed-loop cooling arrangement is shown and described herein, it should be understood and recognized that an open-loop cooling arrangement can also be used. For example, the blower 212 can receive supplemental air from a source outside the coolant circuit.

[0076] To cool the chamber body 102, the blower 212 may supplement the flow of coolant 384 supplied to the supply chamber 162 with heated coolant received from the return chamber 166 and / or from the replenishment pipe. Coolant 384 may flow from the supply chamber 162 over the top reflector 202 and through the top chamber 164 to the outer surface 178 of the top wall 132 of the chamber body 102. Thereafter, coolant 384 may flow over the outer surface 178 into the first transverse chamber 168 and the second transverse chamber 170. As coolant 384 flows over the outer surface 178 of the top wall 132 of the chamber body 102, heat is removed from the top wall 132, thereby cooling the inner surface 176 of the chamber body 102.

[0077] A portion of the coolant 384 flows from the first transverse gas chamber 168 across the first injection end-side reflector 204 and the first discharge end-side reflector 206 and flows therein into the return gas chamber 166. Another portion of the coolant 384 may flow from the second transverse gas chamber 170 across the second injection end-side reflector 208 and the second discharge end-side reflector 210 and flow therein into the return gas chamber 166. The coolant 384 may return from the return gas chamber 166 to the blower 212 for recirculation outside the chamber body 102. In some examples, one or more heat exchangers may be arranged along the flow path of the coolant 384, for example, within a conduit connecting the return gas chamber 166 and / or the supply gas chamber 162, thereby dissipating (e.g., dissipating heat) the heat removed from the outside of the chamber body 102.

[0078] As will be understood in light of this disclosure, semiconductor processing system 100 ( Figure 1 The cooling capacity (as shown) can be determined at least in part by the flow resistance and / or efficiency presented by the reflector of the cooling kit 200. Additionally, the cooling capacity can be increased by limiting the flow resistance (e.g., by reducing the static pressure drop) and / or by guiding the coolant 384 differently through the chamber body 102 and / or by increasing the mass flow rate of the coolant 384 through the chamber body 102. The cooling kit 200 can be configured to provide improved cooling capacity to the chamber body 102 by: (a) limiting the flow resistance of the coolant 384 presented by the reflector, (b) using the blower 212 to provide a relatively high mass flow rate of the coolant 384 outside the chamber body 102, and (c) reducing the internal surface area (e.g., Figure 1The temperature variation of the inner surface 176 shown, and / or (d) the configuration of the top reflector for improved distribution of the coolant 384. In some example configurations, the top reflector 202 may be spaced apart from the top wall 132 of the chamber body 102 by a distance 172, the distance 172 being selected to limit the flow resistance of the coolant 384 between the supply gas chamber 162 and the top gas chamber 164. The distance 172 may be less than 100 mm, less than 90 mm, less than 80 mm, or even less than 70 mm. In some examples, the distance 172 may be selected to correspond with a slot extending through the top reflector 202 (e.g., Figure 6A and 6B The multiple elongated slots 614 shown cooperate to limit the flow resistance of coolant 384 through the top reflector 202 and effectively distribute the coolant on the top wall of the chamber body. According to some examples, the spacing distance 172 may be between about 50 mm and about 150 mm, between about 70 mm and 125 mm, or between about 80 mm and about 100 mm. It is anticipated that spacing distances within these ranges will limit the static pressure drop between the supply gas collection chamber 162 and the top gas collection chamber 164 to less than about 15 Torr, less than about 10 Torr, less than about 5 Torr, or between about 5 Torr and about 15 Torr. Spacing distances within these ranges will also distribute the electromagnetic radiation emitted by the heating lamps on the top wall of the chamber body, thereby limiting the tendency for hot spots to form on the top wall of the chamber body directly below each heating lamp.

[0079] The first injection end-side reflector 204 and / or the second injection end-side reflector 208 may be configured to limit the flow resistance of the coolant between the first lateral gas collection chamber 168 and / or the second lateral gas collection chamber 170 and the return gas collection chamber 166. Either (or both) of the first injection end-side reflector 204 and the second injection end-side reflector 208 may include a planar body, such as a planar body 218. Employing a planar body can facilitate laminar flow of the coolant 384 along the planar body 218, for example by limiting the tendency of flow to otherwise stagnate along the plate body. Alternatively or additionally, either (or both) of the first injection end-side reflector 204 and the second injection end-side reflector 208 may include a height, such as a height 220. The height 220 may be less than the height of the first sidewall 136 of the chamber body 102. Limiting the height of the first injection end reflector 204 and / or the second injection end reflector 208 can limit the resistance presented to the coolant 384 when it flows between the first transverse gas chamber 168 and the return gas chamber 166.

[0080] The first injection end-side reflector 204 and / or the second injection end-side reflector 208 may include a louver portion 222. The louver portion 222 may include a plurality of louvers 224 thereon, configured, for example, to both provide fluid communication between the first transverse gas collection chamber 168 and the return gas collection chamber 166 and limit the reduction in reflectivity of the first injection end-side reflector 204. The louver portion 222 may define an array of louvers passing through it, including a plurality of louvers, such as four, six, eight, or more (e.g., more than ten louvers), or between four and ten louvers. Each louver 224 may include a longitudinal length. The longitudinal length may be greater than 40 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, or between about 40 mm and about 100 mm. Each louver 224 may include a vertical height. The vertical height can be greater than 3 mm, greater than 5 mm, greater than 7 mm, or greater than 9 mm, or between approximately 3 mm and approximately 9 mm. The louvers 224 of the louver section 222 can reduce the flow resistance of the coolant 384 from the first transverse gas collection chamber 168 and / or the second transverse gas collection chamber 170 to the return gas collection chamber 166 without limiting the reflectivity of the first injection end side reflector 204 and / or the second injection end side reflector 208.

[0081] The first discharge end-side reflector 206 and / or the second discharge end-side reflector 210 may include a height 226. Height 226 may be less than the vertical height of the first sidewall 136 of the chamber body 102. Height 226 may be substantially equal to the height 220 of the first injection end-side reflector 204. As described herein, limiting the height of the first injection end-side reflector 204 and / or the second injection end-side reflector 208 can limit the flow resistance of coolant 384 from the first transverse gas collection chamber 168 and / or the second transverse gas collection chamber 170 to the return gas collection chamber 166. For example, the static pressure drop between the first transverse gas collection chamber 168 and / or the second transverse gas collection chamber 170 and the return gas collection chamber 166 may be less than about 7 Torr, less than about 5 Torr, less than about 3 Torr, or between about 7 Torr and about 3 Torr. Alternatively or additionally, the pressure drop may be about 6 Torr. Pressure drops within these ranges can increase coolant velocity and can improve cooling of the chamber body.

[0082] Blower 212 can be configured to increase the mass flow rate of coolant 384 outside the chamber body 102. Blower 212 can be further configured with a slot extending through the top reflector 202 (e.g., Figures 6A to 10The slot 614 cooperates with the coolant 384 to distribute and direct coolant 384 on the outer surface 178 of the top wall 132 of the chamber body 102. This distribution and direction of coolant 384 limits temperature variations on the inner surface 176 of the chamber body 102. For example, the blower 212 may include ratings greater than about 10 standard cubic foot-minutes (SCFM), greater than about 40 SCFM, greater than about 60 SCFM, greater than about 100 SCFM, or between about 10 SCFM and about 100 SCFM. Regarding coolant distribution, blowers 212 rated within these ranges may be associated with a slot (e.g., extending through the top reflector 202) that... Figures 6A to 10 The slot 614 cooperates to cool the top wall 132 of the chamber body 102, such that the temperature range on the inner surface 176 of the top wall 132 can operate between about 10 degrees Celsius and about 65 degrees Celsius lower than the nominal temperature, or between about 30 degrees Celsius and about 55 degrees Celsius lower, or even between about 35 degrees Celsius and about 50 degrees Celsius lower, during material layer deposition. In some examples, the system can be configured such that the inner surface 176 of the top wall 132 can operate at about 40 degrees Celsius lower than the nominal temperature during material layer deposition. In some examples, these temperature reductions within ranges can limit the risk of quartz devitrification forming in the chamber body during relatively prolonged deposition operations, enabling the chamber body to be used for depositing thick epitaxial layers onto the substrate.

[0083] Figure 6A An example top reflector 202A (generally, top reflector 202) is depicted. As described, top reflector 202A can be configured to interact with the chamber body (e.g., Figure 1 The chamber body 102 shown overlaps with the top reflector 202A. The top reflector 202A may include a reflector body 628. The reflector body 628 may include a first longitudinal side 630 and a second longitudinal side 632 substantially opposite to the first longitudinal side. The reflector body 628 may also include a first transverse side 634 and a second transverse side 636 substantially opposite to the first transverse side 634. The reflector body 628 may also include a recessed first surface 638 and a reflective surface 640 substantially opposite to the recessed surface. The recessed first surface 638 and the reflective surface 640 may be determined by the thickness of the reflector body 628 ( Figure 7 The first longitudinal side 630 and the second longitudinal side 632 may be located at the longitudinally opposite ends of the reflector body 628 and may be spaced apart from each other by the longitudinal length of the reflector body 628. The first lateral side 634 and the second lateral side 636 may connect the first longitudinal side 630 and the second longitudinal side 632 and may be spaced apart from each other by the lateral width of the reflector body 628. If the reflector 202A is disposed in the semiconductor processing system 100, the first longitudinal side 630 may substantially cover and / or be disposed in the chamber body (e.g., Figure 1The injection end of the chamber body 102 shown (e.g.) Figure 1 Near the injection end 126 shown, and the second longitudinal side 632 may cover and / or be provided at the discharge end of the chamber body 102 (e.g., near the injection end 126), and the second longitudinal side 632 may cover and / or be provided at the discharge end of the chamber body 102 (e.g., near the injection end 126). Figure 1 Near the discharge end 128 shown. Alternatively or alternatively, if the top reflector 202A is provided in the semiconductor processing system 100, the heater element (e.g., Figure 1 The heater element 108 shown may be disposed between the chamber body 102 and the top reflector 202A. Alternatively, the heater element 108 may extend longitudinally between the first longitudinal side 630 and the second longitudinal side 632.

[0084] The recessed first surface 638 of the reflector body 628 may be longitudinally defined by a first longitudinal side surface 630 and a second longitudinal side surface 632, and laterally defined by a first transverse side surface 634 and a second transverse side surface 636. The top reflector 202A may also include one or more pyrometer ports 642 extending therethrough. The pyrometer ports 642 may extend through the thickness of the reflector body 628. Figure 7 The pyrometer port 642 can be configured to connect a pyrometer (e.g., the 'T' in the name) to the pyrometer. Figure 1 The pyrometers 158 and 160 shown are coupled (e.g., optically coupled) and / or joined to the chamber body (e.g., Figure 1 The optical coupling of the pyrometer allows and / or enables the pyrometer to detect, record, and / or report indications from the chamber body 102 (e.g., the chamber body 102). Figure 1 The substrate support 118 shown) and / or the substrate supported on the substrate support 118 (e.g., Figure 1 Information on temperature readings within the substrate 180 shown. The reported temperature can be used to control the temperature within the chamber body 102 and / or the walls of the chamber body 102, for example, when applying material layers (e.g., Figure 1 During the deposition of the material layer 182 (as shown) onto the substrate 180, the pyrometer ports 642 may be offset longitudinally and / or laterally from each other. An example top reflector 202 having one or more second pyrometer ports allows for monitoring of the temperature of the chamber body 102 at one or more second locations. This temperature monitoring at the second locations improves the deposition of the material layer (e.g., during deposition of the substrate 180). Figure 1 The material layer 182 shown is controlled and / or maintained during deposition onto the substrate 180. Figure 1 The ability of the substrate 180 and chamber body 102 to reach the temperature. Although shown as having two (2) pyrometer ports, it should be understood and recognized that examples of reflector body 628 may have fewer (e.g., 1) or more (e.g., 3, 4, 5, etc.) pyrometer ports.

[0085] As described, the top reflector 202A may include a recessed first surface 638 defining a plurality of extended recesses 644 therein. The plurality of extended recesses 644 may be defined laterally or longitudinally within the recessed first surface 638 of the reflector body 628 and may face towards the second surface 207 of the reflector body 203. Figure 1 (As shown) extends and partially passes through the thickness 213 of the reflector body 203. Figure 3 (As shown). The extended grooves 644 can be configured to limit the deformation of the reflector body 628 due to heating. First portions of the plurality of extended grooves 644 can separate the pyrometer port 642 from the first lateral side 634 and the second lateral side 636. The plurality of extended grooves can be spaced substantially evenly from each other between the first lateral side 634 and the second lateral side 636 of the reflector body 628, and can extend between the first longitudinal side 630 and the second longitudinal side 632 of the reflector body 628. The plurality of extended grooves 644 can extend parallel to each other. The plurality of extended grooves 644 can be substantially orthogonal with respect to either (or both) the first longitudinal side 630 and the second longitudinal side 632. It is also contemplated, according to certain example configurations, that the plurality of extended grooves 644 can be substantially parallel to either (or both) the first lateral side 634 and the second lateral side 636. Although shown as having ten (10) extended grooves 644, it should be understood and recognized that examples of reflector bodies 628 may have fewer (e.g., 9, 8, 7, 2, etc.) or more (e.g., 11, 12, 13, 20, etc.) extended grooves 644.

[0086] Figure 6B Depicting Figure 6A Example of a top reflector 202A with reflective surface 640 side. Reference Figure 6B The reflective surface may include a reflective layer 654. The reflective layer 654 may include a material having a relatively increased reflectivity, such as gold. The reflective layer 654 may be configured to be, for example, formed by a heater element (e.g., Figure 1 The heater element 108 and / or Figure 8 The electromagnetic radiation emitted by the heater element array 874 is directed toward the chamber body located below (e.g., Figure 1 The top reflector can reflect the heating element (e.g., the main body 102 of the chamber). Therefore, the top reflector can increase the reflectivity of the heating element (e.g., the main body 102 of the chamber). Figure 1 The heater element 108 can transfer heat to the chamber body for each unit of power applied to the heater element. The top reflector 202A may also include an intermediate layer 656. The intermediate layer 656 may be configured to attach the reflective layer 656 to the reflector body 628. Examples of the intermediate layer 656 may include a coating comprising, for example, nickel and nickel-containing materials. The use of the intermediate layer 656 can accommodate mismatches in thermal expansion between the materials of the reflector body 628 and the reflective layer 654.

[0087] The top reflector 202A (e.g., reflector body 628) may include one or more slots 614 (e.g., angled slots 614A and substantially straight slots 614B; generally, slots 614) (e.g., channels). Each slot 614 may extend through the thickness of the reflector body 628. For example, each slot 614 may include an aperture through the thickness of the reflector body 628. Alternatively, each slot 614 may include a channel through the reflector body 628 (e.g., through the thickness of the reflector body 628). Alternatively, each slot 614 may include an elongated through-hole (e.g., through the thickness of the reflector body 628) in the reflector body 628. Each slot 614 may extend longitudinally between a first longitudinal side 630 and a second longitudinal side 632 of the reflector body 628. Alternatively, a plurality of slots 614 may be laterally disposed and / or distributed between a first lateral side 634 and a second lateral side 636 of the reflector body 628.

[0088] Figure 7 Depicting Figure 6A and 6B Example of a cross-sectional view of the top reflector 202A. Figure 7 The amplified portion of AA is further described. (Reference) Figure 7 As described, slot 614 may include a through-hole in reflector body 628. For example, reflector body 628 may include one or more first surface holes 746 (e.g., openings) in a recessed first surface 638. Additionally, reflector body 628 may include one or more second surface holes 748 (e.g., openings) in a second surface (e.g., in reflective surface 640). Each slot 614 may include a channel fluidly connected between the first surface hole 746 and the second surface hole 748. For example, as described, coolant may flow from the recessed first surface 638 through slot 614 to reflective surface 640. Alternatively or additionally, coolant may flow from the first surface hole 746 through slot 614 and through the second surface hole 748. Thus, if top reflector 202A is positioned in the chamber body (e.g., Figure 1 Above the chamber body 102), the coolant can be guided via slot 614 to the top wall of the chamber body (e.g., above the main chamber body 102). Figure 1 The slot 614 is positioned on the outer surface of the top wall 132 to cool the top wall and / or the chamber body. Therefore, the configuration (e.g., shape, orientation, etc.) of the slot 614 can affect the cooling efficiency, consistency, and / or uniformity of the chamber body used in a chamber device included in a semiconductor processing system.

[0089] Continue to refer to Figure 7As described, slot 614 can be configured to influence the flow of coolant through it. For example, in some example configurations, the first surface aperture 746 may be larger than the second surface aperture 748. Alternatively, one or more of slots 614 may narrow between the first surface aperture 746 and the second surface aperture 748. Alternatively, slot 614 may include an internal channel (e.g., including a wall) extending between the first surface aperture 746 and the second surface aperture 748. Alternatively, slot 614 (e.g., a channel) may include a cross-sectional profile. The cross-sectional profile of each slot 614 may include one or more shapes. For example, each slot 614 may include, for example, a first portion 750 extending from the first surface aperture 746 and a second portion 752 extending from the first portion 750 (e.g., Figure 7 The first portion 750 and the second portion 752 are angled and substantially vertical (752A and 752B, respectively; generally, the second portion 752). The first portion 750 and the second portion 752 may be configured and / or shaped differently. For example, the first portion 750 may include a cross-sectional profile of a substantially trapezoidal shape. Alternatively or additionally, the wall of the first portion 750 may be inclined from the first surface hole 746. For example, when the first portion 750 extends from the first surface hole 746, the wall of the first portion 750 may be oriented toward the center of the slot 614 (e.g., toward the center of the slot 614). Figure 7 The centerline 'C' is inclined. The wall of the first section 750 may be narrowed by an inclination angle "β". In one or more example configurations, the inclination angle β may be about 15° with respect to the surface normal (e.g., the surface normal vector) (e.g., defined by the centerline 'C'). In one or more other example configurations, the inclination angle β may be in the range of about 5° to about 25°.

[0090] Continue to refer to Figure 7As described herein, slot 614 may be configured to discharge, guide, and / or deliver coolant (e.g., to the outer surface of the top wall of the chamber body). One or more of slots 614 (e.g., angled slots 614A) may be configured to discharge coolant at a flow angle inclined relative to the reflective surface 640 of the reflector body, flowing from the recessed first surface 638 through slot 614. For example, in one or more example configurations, the second surface aperture 748 may be closer to the first lateral side 634 than the first surface aperture 746. Alternatively or additionally, the second surface aperture 748 may be closer to the second lateral side 636 than the first surface aperture 746. Alternatively or additionally, as described, slot 614 may include a channel. Additionally, angled slot 614A may include a first portion 750 (e.g., a first region) and an angled second portion 752A (e.g., a second region). The angled second portion 752A may extend from the first portion 750. The angled second portion 752A may terminate at the second surface aperture 748. The angled second portion 752A may include a cross-sectional profile. The cross-sectional profile of the angled second portion 752A may substantially comprise a parallelogram shape. For example, the cross-sectional profile of the angled second portion 752A may substantially comprise a rhombus shape. In one or more example configurations, the angled second portion 752A (e.g., a wall of the angled second portion 752A) may extend at an angle 'α' relative to the surface normal (e.g., the surface normal vector) of the slot 614 (e.g., defined by the centerline 'C'). Additionally or alternatively, the angled second portion 752A (e.g., of the channel) may be relative to, for example, a substrate support (e.g., a... Figure 1 The substrate (e.g., substrate support 118) defined by the substrate support member 118 Figure 1 The substrate 180) has a set plane extending at an angle α. In some example configurations, angle α may be about 5° measured relative to the surface normal (e.g., center line 'C'). In one or more other or alternative configurations, angle α may range from about 3° to about 8° measured relative to the surface normal. The angled second portion 752A may extend toward the reflective surface 640 (e.g., from the first portion 750) with an angle and / or inclination toward the first lateral side 634 or the second lateral side 636. In such an aspect, one or more of the angled slots 614A may be configured to allow coolant to flow out at a flow angle inclined relative to the reflective surface 640, with the coolant flowing from the recessed first surface 638 through the slots 614 to the reflective surface 640.

[0091] In one or more example configurations, slot 614 can be further configured. For example, refer to [reference needed]. Figure 7One or more of the slots 614 (e.g., a generally vertical slot 614B) may include a generally vertical second portion 752B. For example, the cross-sectional profile of the generally vertical second portion 752B may be generally square and / or rectangular. For example, the generally vertical second portion 752B may extend generally vertically from the first portion 750. Alternatively or additionally, the generally vertical second portion 752B may extend generally vertically between the first portion 750 and the second surface opening 748.

[0092] As described, the top reflector 202A may include a plurality of slots 614. Figure 7 The example configuration depicts seven slots 614. Other example configurations may include more (e.g., 8, 9, 10, 11, etc.) or fewer (e.g., 6, 5, 4, etc.) slots 614. Some or all of the multiple slots 614 may be angled slots 614A. Alternatively or alternatively, all of the multiple angled slots 614A may be angled toward the same side (e.g., toward the first lateral side 634 or the second lateral side 636). Alternatively, a first portion of the angled slots 614A may be angled toward a first side (e.g., the first lateral side 634), and a second portion of the angled slots 614A may be angled toward a second (e.g., opposite) side (e.g., the second lateral side 636). In the example configuration including both angled slots 614A and substantially vertical slots 614B, the slots of different configurations may be distributed differently on the top reflector 202A.

[0093] The reflective surface 640 may include a plurality of recessed surface portions 658. The plurality of recessed surface portions 658 may be located on the first longitudinal side 630 of the reflector body 628 (e.g., Figure 6A and 6B (as shown) and the second longitudinal side 632 (e.g. Figure 6A and 6B The plurality of recessed surface portions 658 may define a recessed profile between the first lateral side surface 634 and the second lateral side surface 636 of the reflector body 628, and a portion of the plurality of slots may be defined in the recessed surface portions 658. The plurality of recessed surface portions 658 may extend parallel to each other between the first longitudinal side surface 630 and the second longitudinal side surface 632 of the reflector body 628. Alternatively or additionally, the plurality of recessed surface portions 658 may be substantially orthogonal to either (or both) the first longitudinal side surface 630 and the second longitudinal side surface 632. It is also conceivable that the plurality of recessed surface portions 658 may extend parallel to either (or both) the first lateral side surface 634 and the second lateral side surface 636.

[0094] Figure 8An example top reflector 202A is depicted disposed above the top wall 132 of the heater array 874 and the chamber body 102. As described, in use, the top reflector 202A may be disposed and / or arranged above the top wall 132 of the chamber body 102. Heater elements and / or an array of heater elements may be disposed between the top reflector 202A and the top wall 132 of the chamber body. Additionally, as described, in use, the top reflector 202A may be used to guide and / or flow coolant (e.g., ...) above the top wall 132 of the chamber body 102. Figure 3 Coolant 384). As described herein and as Figure 8 As shown, the top wall 132 of the chamber body 102 may include a plurality of ribs 154. For example, the top wall 132 may include a plurality of ribs 154 extending from an outer surface. The ribs 154 may provide structural support to the chamber body 102 and / or allow the interior 130 of the chamber body 102 to be kept at a relatively low pressure relative to the environment outside the chamber body 102. It is understood that if coolant flows through the top wall 132, the ribs 154 may disrupt and / or disturb the flow of coolant. Alternatively or additionally, the ribs 154 may cause coolant to stagnate in one or more areas, such as between two adjacent ribs 154. The presence of the ribs 154 may tend to affect cooling performance and / or efficiency. Therefore, the slots 614 of this disclosure may be used to improve cooling efficiency in such a configuration. For example, angled slots 614A may be arranged and distributed in different ways in the top reflector 202A to guide coolant at an angle inclined to the reflective surface 640 and / or inclined to the top wall 132 of the chamber body 102. Slots 614 (e.g., angled slots 614A and substantially vertical slots 614B) can be distributed in the top reflector to increase the recirculation area and reduce, for example, the temperature boundary layer between the two ribs 154. In this way, the cooling efficiency of the top reflector 202A and / or the system can be improved.

[0095] Return to reference Figure 6A and 6B As described, the top reflector 202A may include a plurality of slots 614. The plurality of slots 614 may include slots of different lengths. For example, different slots 614 may extend different lengths and / or distances between the first longitudinal side 630 and the second longitudinal side 632 of the reflector body 628. Figure 6A and 6B A single example configuration comprising six (6) elongated slots and one (1) shortened slot is depicted. Additionally, Figure 6A and 6B A specific example lateral distribution of slot 614 is depicted. In other example configurations, slot 614 may be configured and / or distributed differently.

[0096] Figure 9 An alternative example top reflector 202B is depicted. Figure 9 The reflector 202B can be basically similar to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 6A , Figure 6B , Figure 7 , Figure 8 , Figure 10 Reflectors 202, 202A, and 202C, unless otherwise explicitly described herein. References Figure 9 The top reflector 202B may include four (4) elongated slots 614 and ten (10) shortened slots. Additionally, in Figure 9 In the example configuration, the top reflector 202B and the slot 614 can be distributed substantially as depicted. Additionally, multiple slots 614 can be arranged in multiple groups, with the first group comprising relatively elongated slots 614 and the second group comprising relatively shortened slots 614. The slots 614 in the two groups can be distributed differently on the reflector body 628. Alternatively or additionally, the exemplary reflector body 628 can include more (e.g., three (3) groups, four (4) groups, etc.) or fewer slots 614 of different sizes. Figure 9 An example top reflector with two pyrometer ports 642 is depicted. Other example configurations may include more or fewer pyrometer ports 642.

[0097] Figure 10 An alternative example top reflector 202C is depicted. Figure 10 The 202C reflector can be basically similar to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 6A , Figure 6B , Figure 7 , Figure 8 and Figure 9 Reflectors 202, 202A, and 202B, unless otherwise explicitly described herein. References Figure 10 The top reflector 202B may include one or more relatively shortened slots 614, one or more slots 614 of relatively intermediate length, and one or more relatively elongated slots. Additionally, in the top reflector 202C... Figure 10In the example configuration, the slots 614 can be distributed substantially as depicted. Alternatively, the multiple slots 614 can be arranged in multiple groups, with the first group comprising one or more (e.g., three (3)) relatively elongated slots 614, the second group comprising one or more slots 614 of relatively intermediate length, and the third group comprising one or more (e.g., two (2)) relatively shortened slots 614. The three groups of slots 614 can be distributed differently on the reflector body 628. Alternatively or alternatively, the exemplary reflector body 628 may include more (e.g., four (4) groups, five (5) groups, etc.) or fewer slots 614 of different sizes. Furthermore, Figure 10 An example top reflector 202C with two pyrometer ports 642 is depicted. Other example configurations may include more or fewer pyrometer ports 642.

[0098] According to another embodiment of this disclosure, a reflector configuration is provided that may differ in some respects from both solid and slotted reflectors. In some embodiments, the reflector is reconfigurable and includes selectively blocking slots, wherein quartz rods can be inserted into one or more slots to modulate airflow through the reflector. In such embodiments, by adjusting the number and position of the quartz rods, the chamber temperature can be regulated to a target range suitable for all additional processes, where a chamber temperature between 550°C and 600°C may be desired. This reconfigurable configuration enables sustainable, uncoated operation, which can extend tool performance.

[0099] In one embodiment, the reflector includes a body having a plurality of slots extending through its thickness, such as... Figure 8 and Figure 9 As shown. The quartz rod 804 is removably inserted into the selected slot to act as an airflow blocker, such as... Figure 8 As shown in the projection area 806, an exemplary quartz rod 804 is inserted into the slot 614B. The number, length, and arrangement of the quartz rods 804 can be varied to control the flow of coolant through the reflector (e.g., Figure 8The distribution and rate of the airflow (shown in 802) are adjusted to regulate the chamber temperature. The airflow 802 is guided through slots, where quartz rods 804 selectively block or allow passage to achieve the desired cooling effect. In various embodiments, experimental results have shown that, with appropriate quartz rod arrangements, the chamber temperature can be maintained within the desired range without triggering blower over-temperature alarms, and the chamber coating can be significantly reduced or eliminated even under high-temperature process conditions. In use, the quartz rods 804 can be manually or automatically inserted into or removed from the slots (e.g., 614A and 614B) of the reflector body before or during the deposition process. The selection of which slots to block, as well as the number and arrangement of the quartz rods 804, can be determined based on the desired chamber temperature distribution for a particular process formulation. The rods can be sized to fit securely within the slots and can be color-coded or marked for easy identification and adjustment. This adjustability allows for rapid adjustment of chamber conditions without replacing the entire reflector.

[0100] In some embodiments employing quartz rods, the reflector can be formed as a single piece with only the necessary slots for process control, omitting unused slots to further optimize airflow and temperature distribution. In such embodiments, pyrometer ports can be provided to enable real-time temperature monitoring at multiple locations within the chamber, thereby facilitating closed-loop temperature control. In some embodiments, the reflector is integrated into a chamber cooling system including a blower for circulating coolant outside the chamber body. The coolant can be guided through slots in the reflector, where the flow pattern and rate are controlled by the presence or absence of the quartz rod. The system can operate in open-loop or closed-loop mode, where temperature feedback is provided by a pyrometer to adjust the blower speed or rod arrangement as needed for optimal process control. In some examples, adjustable reflector configurations can be adapted to various semiconductor deposition processes, including deep trench etching, epitaxial growth, and high-temperature chemical vapor deposition. The system can be used with different substrate sizes and materials, and the reflector design can be tailored to specific chamber geometries or process requirements. The ability to regulate chamber temperature and airflow enables improved uniformity, reduced defect rates, and extended chamber maintenance intervals. Furthermore, the quartz rod and reflector body can be designed for durability and ease of maintenance. For example, if the quartz rod is damaged or contaminated, it can be replaced individually, and the reflector body can be cleaned or refurbished as needed. Therefore, the modular and reconfigurable design allows for rapid reconfiguration to accommodate new process formulations or chamber upgrades.

[0101] Furthermore, in some embodiments, the reflector body may be formed of a copper-containing material, such as brass or bronze, to provide high thermal conductivity and mechanical stability during semiconductor processing. In such embodiments, the reflective surface of the reflector may include a gold layer deposited on the copper-containing body to enhance reflectivity and thermal properties. In some configurations, an intermediate layer, such as nickel, may be provided between the copper-containing body and the gold layer to accommodate differences in thermal expansion and improve adhesion. While copper-containing materials and gold reflective layers can be used, alternative materials such as aluminum alloys, silver, or other high-reflectivity coatings can be used for the reflector body and surface, provided they provide suitable thermal and mechanical properties.

[0102] In some embodiments, the quartz rod 804 used as an airflow deflector may be made of high-purity quartz, which is chosen for its durability and resistance to the high temperatures encountered during the deposition process. Similarly, alternative rod materials other than quartz may be considered for specific process environments. For example, in some embodiments, the airflow deflector may be formed of materials other than quartz, provided they provide suitable thermal stability, chemical resistance, and mechanical strength for the semiconductor processing environment. Alternative materials may include alumina (Al2O3), silicon carbide (SiC), sapphire, fused silica, boron nitride (BN), zirconium oxide, silicon nitride (Si3N), or metal alloys with a protective ceramic coating. The selection of the rod material may be based on the specific temperature, chemical exposure, and durability requirements of the deposition process.

[0103] Figure 11 The reflector shown in this article (e.g.) Figures 6A to 8 Top reflector 202A, Figure 9 Top reflector 202B and Figure 10 The top reflector 202C; generally, the reflector 202) is associated with example method 1100. One or more steps of example method 1100 may be omitted and / or reordered without departing from the scope of this disclosure. In step 1101, the reflector (e.g., Figures 6A to 8 Top reflector 202A, Figure 9 Top reflector 202B or Figure 10 The top reflector 202C can be positioned (e.g., located) in a semiconductor processing system (e.g., Figure 1 The chamber body of the semiconductor processing system 100 (e.g., Figure 1 Above the main body of the chamber (102). Positioning the reflector above the main body of the chamber may include aligning the reflector with a portion of the main body of the chamber (e.g., the top wall of the main body of the chamber). Figure 1 The top wall 132 overlaps. Alternatively, positioning the reflector above the chamber body may include positioning the reflector above one or more heater elements (e.g., Figure 8Above the heater element 108 and / or heater element array 874. The reflector may be spaced apart from the chamber body.

[0104] In step 1103, the substrate (e.g.) can be... Figure 1 The substrate 180 is disposed (e.g., positioned and / or placed) within the chamber body of the chamber device chamber. Disposing the substrate within the chamber body may include disposing (e.g., positioning and / or placing) the substrate on a substrate support (e.g., Figure 1 On the substrate support 118).

[0105] In step 1105, the substrate can be heated. This can be done, for example, via one or more heater elements (e.g., Figure 1 The heater element 108 and / or Figure 8 The heater element array 874 heats the substrate. The heater elements can be disposed between the reflector and the chamber body. For example, one or more heater elements can be positioned in electromagnetic radiation communication with the top wall of the chamber body. Alternatively, one or more heater elements can be positioned in electromagnetic radiation communication with a top reflector disposed above. Electromagnetic radiation can be reflected from the one or more heater elements in a direction substantially opposite to the substrate. The top reflector can be positioned, for example, via a reflective surface (e.g., Figures 6A to 10 The reflective surface 640) reflects a portion of the electromagnetic radiation received from one or more heater elements toward the top wall of the chamber body.

[0106] In step 1107, the substrate can be brought into contact with the material layer precursor (e.g., substantially as per...). Figure 1 (as described by the first precursor source 110 and one or more second precursor sources 112).

[0107] In step 1109, the coolant (e.g.) Figure 3 The coolant 384 can flow out (e.g., flow, guide) from the reflector to cool the chamber body during material layer deposition onto the substrate. For example, the coolant can flow out through the reflector, for example through the reflector body (e.g. Figures 6A to 10 The reflector body 628). For example, coolant may be introduced into and / or flow out from a first surface of the reflector. For example, coolant may be introduced into one or more holes in the first surface of the reflector. Coolant may flow out from a second surface of the reflector (e.g., Figures 6A to 10 The coolant flows out from the reflective surface 640, for example, from one or more second surface holes at a flow angle inclined relative to the second surface of the reflector body. The chamber body and / or one or more portions thereof (e.g., a portion of the top wall) may be cooled, for example, during the deposition of the material layer onto the substrate via a coolant flowing out from the reflector (e.g., localized cooling).

[0108] Although examples have been described above, features and / or steps of these examples can be combined, divided, omitted, rearranged, modified, and / or enhanced in any desired manner. Various changes, modifications, and improvements will readily occur to those skilled in the art. Such changes, modifications, and improvements are intended to be part of this specification, although not expressly stated herein, and are intended to fall within the spirit and scope of this disclosure. Therefore, the foregoing description is by way of example only and not restrictive.

Claims

1. A reflector, comprising: The reflector body has: A first surface, which is partially defined by the side of the reflector body, and defines a first surface aperture therein; as well as The second surface, which is also partially defined by the side of the reflector body and includes a reflective material, is separated from the first surface by the thickness of the reflector body, and defines a second surface aperture therein. The second surface aperture is fluidly connected to the first surface aperture via a channel extending through the thickness of the reflector body. Wherein, one of the first surface hole and the second surface hole is positioned closer to the side of the reflector than the other of the first surface hole and the second surface hole, and At least a portion of the channel is angled relative to at least one of the first and second surfaces, so that coolant flows out from the second surface hole at a flow angle inclined relative to the reflector body.

2. The reflector according to claim 1, wherein, The first surface of the reflector body defines a plurality of extended grooves therein, the plurality of extended grooves extending toward the second surface and partially through the thickness of the reflector body.

3. The reflector according to claim 1, wherein, The reflector body is formed of a copper-containing material, wherein the reflective material includes gold.

4. The reflector according to claim 1, wherein, The reflector body defines a port extending through it, the port extending through the thickness of the reflector body, the port optically coupling a second surface of the reflector body along an optical axis substantially parallel to the side of the reflector body, wherein the channel is inclined relative to the optical axis.

5. The reflector according to claim 1, wherein, The reflector body also includes a first longitudinal side and a second longitudinal side, wherein the first longitudinal side and the second longitudinal side are configured to be substantially orthogonal to the side, and wherein the first surface hole and the second hole extend in a direction between the first longitudinal side and the second longitudinal side, thereby cooperating with the channel to define an angled slot extending through the reflector body.

6. The reflector according to claim 1, wherein, A portion of the channel extends through the thickness of the reflector body at an angle relative to the surface normal.

7. The reflector according to claim 1, wherein, The first surface hole and the second surface hole define a slot within the reflector body. The slot has a primary dimension and a secondary dimension, with the primary dimension being substantially parallel to the side of the reflector body.

8. The reflector according to claim 1, wherein, The reflector body is further configured to overlap with the ribbed outer surface of the wall of the chamber body of the semiconductor processing system, wherein the channel is configured to guide coolant into the gap between adjacent ribs defined on the ribbed outer surface of the wall of the chamber body.

9. The reflector according to claim 1, wherein, At least one slot extending through the reflector body is configured to receive a removable quartz rod operable to block airflow through the at least one slot.

10. The reflector according to claim 9, wherein, The number and arrangement of the quartz rods inserted into the slot are adjustable to regulate the temperature inside the chamber during the deposition process.

11. The reflector of claim 1, further comprising one or more pyrometer ports extending through the reflector body, each of the one or more pyrometer ports being configured to optically couple a pyrometer to a chamber for temperature monitoring.

12. A chamber device, comprising: The reflector as described in claim 1; The main body of the chamber is separated from the reflector; A substrate support is arranged inside the chamber body and supported to rotate about a rotation axis; as well as An array of heater elements is arranged between the chamber body and the reflector, wherein the channels are inclined relative to the substrate mounting plane defined by the substrate support.

13. The chamber device according to claim 12, wherein, The reflector includes one or more removable quartz rods that are inserted into selected slots to control airflow and chamber body temperature.

14. The chamber device according to claim 12, wherein, The temperature of the main chamber is maintained in the range of about 550°C to about 600°C during operation.

15. The chamber device according to claim 12, wherein, The chamber body extends between an injection end and a longitudinally opposite discharge end, wherein the chamber body has a plurality of ribs that extend laterally around the chamber body and are longitudinally spaced between the injection end and the discharge end of the chamber body, and wherein the channel is inclined relative to the plurality of ribs.

16. The chamber device according to claim 12, wherein, The substrate support includes a base structure configured to receive a semiconductor substrate, and wherein the heater element array is configured to guide electromagnetic radiation toward the chamber body.

17. The chamber device according to claim 12, wherein, The reflector includes one or more removable quartz rods that are inserted into selected slots to control airflow and chamber body temperature.

18. A method for depositing a material layer, comprising: At the chamber device, the chamber device includes a chamber body and a reflector spaced apart from the chamber body; the reflector includes a reflector body having: a first surface partially defined by a side of the reflector body and defining a first surface aperture therein; A second surface, also partially defined by the side of the reflector body and comprising a reflective material, is separated from the first surface by the thickness of the reflector body. The second surface defines a second surface aperture therein, which is fluidly connected to the first surface aperture via a channel extending through the thickness of the reflector body. One of the first and second surface apertures is positioned closer to the side of the reflector than the other, and the channel is angled relative to at least one of the first and second surfaces. The substrate is placed inside the chamber body; The substrate is heated by an array of heater elements disposed between the reflector and the chamber body, at least in part by electromagnetic radiation emitted by the array of heater elements in a direction substantially opposite to the substrate and reflected by a second surface of the reflector body. The substrate is brought into contact with the material layer precursor, allowing the material layer to be deposited onto the substrate. as well as Coolant flows out from the second surface hole at a flow angle tilted relative to the reflector body, thereby locally cooling the chamber body during the deposition of the material layer onto the substrate by the coolant flowing out from the second surface hole.

19. The method of claim 18, further comprising adjusting the number and arrangement of quartz rods inserted into the slot of the reflector to regulate the chamber body temperature during the deposition process.

20. The method according to claim 18, wherein, The outflowing coolant also includes cooling a portion of the interior of the chamber body during the deposition of the material layer onto the substrate.

Images