High-power-density X-waveband high-power solid-state transmitting assembly and design method

Abstract

The invention discloses a high-power-density X-waveband high-power solid-state transmitting assembly which comprises a gallium nitride driving power amplifier unit, a space waveguide power division and synthesis unit, a gallium nitride last-stage power amplifier unit, a power supply unit, a modulation unit and a heat dissipation unit. The gallium nitride driving power amplifier unit comprises an isolator, a high-frequency switch and a multi-stage driving power amplifier; the space waveguide power division and synthesis unit comprises eight paths of space waveguide power dividers and eight paths of space waveguide synthesizers; the gallium nitride last-stage power amplifier unit comprises eight paths of gallium nitride power amplifier modules; the power supply unit comprises a main power supply module used for converting high-voltage input into power supply voltage of the power amplifier module and a multi-voltage output auxiliary power supply module used for providing various auxiliary voltages. The heat dissipation unit comprises a cold plate which is internally provided with a water channel; and the space waveguide power division and synthesis unit, the cold plate of the heat dissipation unit and the box body of the transmitting assembly are integrally processed. Layered and modular design is adopted for each unit of the module, and the power density of the module is improved through reasonable layout.

Description

Technical Field

[0001] This invention relates to radar transmission technology, specifically to a high-power density X-band high-power solid-state transmission component and its design method. Background Technology

[0002] Currently, there is a clear trend towards higher power, miniaturization, and higher power density in X-band transmitter components, which are attracting significant attention as core components of radar transmission subsystems. High-power transmitter components require multi-channel power amplifier modules for power division and combining, along with the stacking of multiple units such as power supply, monitoring, and heat dissipation units. Traditional transmitter components are often large in size and have low power density. Therefore, improving the power density of transmitter components is of great significance and engineering value for the development of high power, miniaturization, and high power density in solid-state transmitters. Summary of the Invention

[0003] The purpose of this invention is to provide a high-power-density X-band high-power solid-state transmitter and its design method, so as to solve the problems of low power density and large size of existing X-band transmitters.

[0004] The technical solution to achieve the objective of this invention is: a high power density X-band high-power solid-state transmitter, comprising:

[0005] Gallium nitride driver power amplifier unit, space waveguide power divider and combiner unit, gallium nitride final stage power amplifier unit, power supply unit, modulation unit and heat dissipation unit;

[0006] The gallium nitride driver amplifier unit includes an isolator, a high-frequency switch, and a multi-stage driver amplifier.

[0007] The space waveguide power divider and combiner unit includes an 8-channel space waveguide power divider and an 8-channel space waveguide combiner.

[0008] The gallium nitride final stage power amplifier unit includes 8 gallium nitride power amplifier modules;

[0009] The power supply unit includes a main power supply module for converting high voltage input into power amplifier module power supply voltage and a multi-voltage output auxiliary power supply module for providing multiple auxiliary voltages.

[0010] The heat dissipation unit includes a cold plate with internal water channels;

[0011] The cold plate of the space waveguide power divider and heat dissipation unit and the housing of the transmitting component are integrated into one unit.

[0012] Furthermore, both the 8-channel space waveguide power divider and the 8-channel space waveguide combiner adopt a double-sided terminal design. The entire space waveguide power divider and combiner unit is manufactured using a two-layer structure made of aluminum alloy and machined by milling, with a length-to-diameter ratio not exceeding 5.

[0013] Furthermore, the gallium nitride final stage power amplifier unit adopts two-stage amplification. After the component excitation is driven and amplified by the drive amplification unit, it outputs 8 signals through an 8-channel space waveguide power divider. The amplification path of a single signal in the gallium nitride final stage power amplifier unit includes: waveguide-microstrip conversion, gallium nitride pre-stage drive, microstrip power divider, microstrip bridge, and final stage gallium nitride power amplifier device; after amplification, the 8 signals are sent to the 8-channel space waveguide combiner through a microstrip probe-waveguide bridge.

[0014] Furthermore, the main power supply module in the power supply unit is a 2400W power supply module of 2 / 3 brick size, used to convert 390V DC input to 28V DC output; its circuit adopts a high-frequency half-bridge LLC resonant topology, the primary-side switching transistor is a gallium nitride MOSFET, the transformer is a planar transformer, and the parasitic inductance and capacitance of the transformer are used as resonant inductance and resonant capacitance; the secondary side adopts synchronous rectification technology; the control part adopts an ARM chip.

[0015] Furthermore, the multi-voltage output auxiliary power supply module is an integrated module encapsulated in a metal casing, used to convert 28V input into +5V, -5V and +3.3V output; wherein, the +5V output is implemented using a full-bridge synchronous rectification circuit, the -5V output is implemented using a BUCK-BOOST circuit, and the +3.3V output is implemented using a synchronous BUCK circuit.

[0016] Furthermore, the heat dissipation unit adopts a hamburger-style structure layout, with the circuits of the modulation unit and power supply unit arranged on both sides of the cold plate, along with the gallium nitride driver power amplifier unit and the final stage power amplifier unit; the water channel is designed as a two-channel system, with the coolant inlet temperature configured at 40℃ and the flow rate configured at 6L / min.

[0017] A design method for a high-power-density X-band high-power solid-state transmitter includes the following steps:

[0018] A transmission link is constructed, which sequentially includes a gallium nitride driver power amplifier unit, an 8-channel space waveguide power divider, an 8-channel gallium nitride final stage power amplifier module, and an 8-channel space waveguide combiner.

[0019] The power-dividing and combining unit consisting of an 8-channel space waveguide power divider and an 8-channel space waveguide combiner, the heat dissipation plate, and the component box are integrated and processed into one unit.

[0020] A power supply unit is configured for the transmitting component. The power supply unit adopts a high-frequency modular design, in which the main power conversion uses a half-bridge LLC resonant topology and a planar transformer.

[0021] The components are arranged using a hamburger-style heat dissipation structure, with the modulation circuit, power supply circuit, and power amplifier circuit placed on opposite sides of the heat dissipation plate.

[0022] Furthermore, in the integrated processing, the space waveguide power divider unit is made of aluminum alloy material through milling and is designed as a two-layer structure, with the aspect ratio controlled below 5.

[0023] Furthermore, the design of the power supply unit includes:

[0024] The main power supply module is designed to convert 390V input to 28V / 2400W output using a high-frequency half-bridge LLC topology, where the parasitic parameters of a planar transformer are used as resonant elements.

[0025] Design a multi-voltage output auxiliary power supply module that integrates 28V to +5V, -5V and +3.3V circuits into a metal housing module.

[0026] Furthermore, the design of the hamburger-style heat dissipation structure includes: employing water cooling, designing two flow channels within the cold plate, setting the coolant inlet temperature to 40℃, the flow rate to 6L / min, and setting the contact thermal resistance between the cold plate and the power device to 1.25×10⁻⁶. -6 (m 2 k) / W.

[0027] Compared with existing technologies, the significant advantages of this invention are: 1) It adopts a two-stage gallium nitride power amplifier module, achieving 1548W power output through a compact layout; the 8-channel power divider / combiner uses double-sided terminals and is processed in two layers, reducing the size by half compared to conventional power divider / combiners without affecting performance. At the same time, it uses aluminum alloy material and milling to reduce the aspect ratio to 5; 2) In the power supply section, a MHz frequency half-bridge LLC is used to achieve 2400W power output from 390V to 28V, compressing the size to 2 / 3 of the original size. The +5V, -5V, and 3.3V adopt a modular design, integrating the EMI filter circuit, power circuit, control circuit, protection circuit, and filter circuit into a single package, compressing the circuit size to half of the original size while meeting performance requirements; 3) It adopts a hamburger structure, placing the modulation circuit, power circuit, and power amplifier section on both sides of the component's cold plate, reducing the overall size of the solid-state transmitter component and further improving the component's power density. Attached Figure Description

[0028] Figure 1 This is a block diagram illustrating the principle of a high-power density X-band high-power solid-state transmitter.

[0029] Figure 2 This is a layout diagram of each unit in the component.

[0030] Figure 3 This is a block diagram illustrating the principle of the power combining unit in an X-band solid-state transmitter. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0032] A high-power-density X-band high-power solid-state transmitter assembly includes a gallium nitride (GaN) driver amplifier unit, an 8-channel space waveguide power divider, an 8-channel space waveguide combiner, a GaN final-stage power amplifier unit, a power supply unit, a modulation unit, and a heat dissipation unit. The GaN driver amplifier unit includes an isolator, a high-frequency switch, driver amplifier 1, driver amplifier 2, and driver amplifier 3. The 8-channel space waveguide power divider and the 8-channel space waveguide combiner form a space waveguide power divider-combiner unit. The final-stage power amplifier unit includes an 8-channel GaN power amplifier module. The power supply unit includes a main power supply module and a multi-voltage output auxiliary power supply module. The heat dissipation unit consists of a cold plate and water channels. The power divider-combiner unit (comprising the 8-channel space waveguide power divider and the 8-channel space waveguide combiner), the heat dissipation unit, and the X-band solid-state transmitter assembly housing are integrated into a single unit.

[0033] As an optimization, the 8-channel space waveguide power divider and 8-channel space waveguide combiner adopt double-sided terminals. The entire power divider and combiner unit is machined in two layers, using aluminum alloy as the material, and is milled to reduce the aspect ratio to 5 and the edge chamfer to 1mm. The internal machining accuracy of the model is ±0.02mm.

[0034] As an optimization, the power combining technology of the gallium nitride final stage power amplifier unit adopts a combination of spatial combining and waveguide-microstrip dual probe conversion. The component excitation is driven and amplified by the driving amplification unit and then outputs 8 signals through 8-channel spatial waveguide power dividers. The amplification path of a single signal in the gallium nitride final stage power amplifier unit includes: waveguide-microstrip conversion, gallium nitride pre-stage driver, microstrip power divider, microstrip bridge and final stage gallium nitride power amplifier device; after amplification, the 8 signals are sent to the 8-channel spatial waveguide combiner through microstrip probe-waveguide bridge.

[0035] As an optimization, the main power supply module is a 2400W power supply module of 2 / 3 brick size, used to convert 390V DC input to 28V DC output; its circuit adopts a high-frequency half-bridge LLC resonant topology, the primary-side switching transistor is a gallium nitride MOSFET, the transformer is a planar transformer, and the parasitic inductance and capacitance of the transformer are used as resonant inductance and resonant capacitance; the secondary side adopts synchronous rectification technology; the control part adopts an ARM chip.

[0036] As an optimization, the multi-voltage output auxiliary power supply module is an integrated module encapsulated in a metal casing, used to convert 28V input into +5V, -5V and +3.3V output; wherein, the cover plate is embedded in the transmitting component by countersunk screws, the +5V output is implemented by a full-bridge synchronous rectification circuit, the -5V output is implemented by a BUCK-BOOST circuit, and the +3.3V output is implemented by a synchronous BUCK circuit.

[0037] As an optimization, the heat dissipation unit uses a cold plate with a water-cooling design, employing a hamburger-style structure. The modulation circuit, power supply circuit, and power amplifier section are respectively located on opposite sides of the component's cold plate, reducing the overall size of the solid-state emitter component. 65# antifreeze is used, with the coolant temperature at the water channel inlet configured at 40℃ and the flow rate at 6L / min. DN8 water connectors are used at the inlet and outlet, and the outlet is a free-flow outlet. The contact thermal resistance (0.05mm thick indium sheet) between the cold plate and the device is configured as 1.25 × 10⁻⁶. -6 (m 2 k) / W, the solid surface exposed to air is considered to be thermally insulating, the flow channel adopts a two-channel design, the coolant enters from the upper left side of the launch assembly and flows out from the upper right side.

[0038] This invention also proposes a design method for a high-power-density X-band high-power solid-state transmitter, comprising the following steps:

[0039] A transmission link is constructed, which sequentially includes a gallium nitride driver power amplifier unit, an 8-channel space waveguide power divider, an 8-channel gallium nitride final stage power amplifier module, and an 8-channel space waveguide combiner.

[0040] The power-dividing and combining unit consisting of an 8-channel space waveguide power divider and an 8-channel space waveguide combiner, the heat dissipation plate, and the component box are integrated and processed into one unit.

[0041] A power supply unit is configured for the transmitting component. The power supply unit adopts a high-frequency modular design, in which the main power conversion uses a half-bridge LLC resonant topology and a planar transformer.

[0042] The components are arranged using a hamburger-style heat dissipation structure, with the modulation circuit, power supply circuit, and power amplifier circuit placed on opposite sides of the heat dissipation plate.

[0043] In summary, the components of this invention adopt a layered and modular design, and the power density of the components is improved through reasonable layout.

[0044] Example

[0045] To verify the effectiveness of the present invention, the following experiment was conducted.

[0046] like Figure 1 , Figure 2 and Figure 3As shown, this embodiment of the invention provides a high-power-density X-band high-power solid-state transmitter module. The main technical parameters are as follows: peak output power: ≥1.35KW; cooling method: water cooling; module size: ≤400mm*200mm*70mm; power density: ≥4033.98W / in 3 Component input voltage: DC390V; Power amplifier module power supply voltage: DC28V;

[0047] (1) Overall composition of components

[0048] The transmitter assembly mainly includes a gallium nitride (GaN) driver power amplifier unit, a space waveguide power divider and combiner unit, a GaN final stage power amplifier unit, a power supply unit, a modulation unit, and a heat dissipation unit. Each unit adopts a layered and modular design concept, and its compact three-dimensional layout greatly improves space utilization.

[0049] (2) Space waveguide power splitting and combining unit

[0050] This unit is one of the core components for miniaturization. For example... Figure 3 As shown, the 8-channel space waveguide power divider, 8-channel space waveguide combiner, heat sink, and component housing are manufactured through integrated processing. Specific implementation details are as follows: The entire power divider and combiner unit adopts a two-layer structure, using aluminum alloy as the base material, and is formed through high-precision milling. This design successfully reduces the aspect ratio of the internal waveguide channels to 5 (the conventional processing limit is usually 6). Both the power divider and combiner adopt a double-sided terminal design, facilitating vertical interconnection with the upper and lower layer circuit modules (drive power amplifier and final stage power amplifier), saving planar layout space. The machining accuracy of key internal dimensions is controlled within ±0.02mm, and the edge chamfer is 1mm, ensuring the transmission performance and combining efficiency of X-band signals.

[0051] (3) Power supply unit

[0052] (31) Main power supply module (390V to 28V):

[0053] This module employs a high-frequency half-bridge LLC resonant converter. The topology operates in the MHz frequency range. Gallium nitride MOSFETs are used as primary-side switches to reduce switching losses; a planar transformer is used. Innovatively, the parasitic inductance and capacitance of the planar transformer itself are used as the resonant inductance and capacitance required for the LLC resonant circuit, further reducing the number of external components and module size. The secondary side uses SR synchronous rectification technology, and the control core is implemented using a domestically produced ARM chip (such as TAE32G5800TLD256). Output filtering uses a combination of high-frequency ceramic capacitors and low-ESR solid-state aluminum capacitors. This module has a power rating of 2400W and a package size of only 2 / 3 brick, significantly saving space.

[0054] (32) Multi-voltage output auxiliary power supply module (28V to +5V / -5V / +3.3V):

[0055] The EMI filtering, power conversion, control, and protection circuits are integrated and packaged into a module measuring approximately 52.5mm × 70mm × 30mm. The housing is made of AZ40M (MB2) all-metal aluminum alloy and is embedded in the component using countersunk screws, serving both heat dissipation, shielding, and structural fixation functions. +5V output: Employs a full-bridge synchronous rectifier circuit, with loop control by a CYT5035 PWM controller. -5V output: Implemented using a BUCK-BOOST circuit. +3.3V output: Implemented using a synchronous BUCK circuit.

[0056] (4) Gallium nitride final stage power amplifier unit

[0057] To minimize the size of the final stage power amplifier assembly, a two-stage amplification scheme is employed. For example... Figure 3 As shown, the single-channel signal output from the upper-layer space waveguide power divider first undergoes a waveguide-to-microstrip dual-probe conversion, transforming the waveguide signal into a microstrip line signal. It then enters the gallium nitride (GaN) pre-amplifier for initial amplification. After the driver output, it is split into two channels by a microstrip power divider. Each of the two signals passes through a microstrip bridge, driving two GaN final-stage power amplifiers for amplification. The amplified signals are then combined into a single channel by the microstrip bridge, and finally converted back to waveguide mode by a microstrip probe before being fed into the lower-layer 8-channel space waveguide combiner. The remaining 7 channels undergo the same process, resulting in the final 8 channels being combined and output in the waveguide combiner.

[0058] (5) Heat dissipation unit

[0059] Heat dissipation is crucial for high power density components. This embodiment employs water cooling and a hamburger-style layout. The modulation unit circuit board and power supply unit circuit board are arranged on the same side of the cold plate, while the heat-generating components of the gallium nitride driver amplifier unit and the final stage amplifier unit are concentrated on the other side of the cold plate. The cold plate has two independent flow channels. Coolant (using 65# antifreeze) flows in from the DN8 water connector on the upper left side of the component, carries away heat through the cold plate, and then flows freely out from the upper right side. The coolant inlet temperature is set to 40°C, and the flow rate is 6L / min. A 0.05mm thick indium sheet is used as a thermal interface material between the amplifier components and the cold plate, with a contact thermal resistance of 1.25×10⁻⁻⁻⁶. 6 (m²·K) / W, solid surfaces exposed to air are considered to be insulating.

[0060] (6) Work process

[0061] When the component is operating, the external input excitation signal first enters the gallium nitride (GaN) driver power amplifier unit (passing through isolators, switches, and multi-stage driver amplification), and then is sent to an 8-channel space waveguide power divider. The 8 divided signals then enter 8 GaN final-stage power amplifier modules for power amplification, and the amplified signals are finally combined by an 8-channel space waveguide combiner to output a single high-power signal. Throughout the process, the power supply unit provides the required voltages for each stage, and the heat dissipation unit ensures that each power device operates within a safe temperature range.

[0062] In summary, the embodiments of the present invention, through the synergistic effect of key technologies such as the integrated processing of space waveguide structure, high-frequency LLC and modular power supply design, two-stage gallium nitride amplification compact path, and hamburger-style water cooling heat dissipation layout, have successfully achieved a significant improvement in power density of X-band high-power solid-state transmitter components. They have the advantages of high power, miniaturization, and high reliability, and are particularly suitable for advanced radar systems with stringent requirements for space and weight.

[0063] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0064] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A high-power-density X-band high-power solid-state transmitter, characterized in that, include: Gallium nitride driver power amplifier unit, space waveguide power divider and combiner unit, gallium nitride final stage power amplifier unit, power supply unit, modulation unit and heat dissipation unit; The gallium nitride driver amplifier unit includes an isolator, a high-frequency switch, and a multi-stage driver amplifier. The space waveguide power divider and combiner unit includes an 8-channel space waveguide power divider and an 8-channel space waveguide combiner. The gallium nitride final stage power amplifier unit includes 8 gallium nitride power amplifier modules; The power supply unit includes a main power supply module for converting high voltage input into power amplifier module power supply voltage and a multi-voltage output auxiliary power supply module for providing multiple auxiliary voltages. The heat dissipation unit includes a cold plate with internal water channels; The cold plate of the space waveguide power divider and heat dissipation unit and the housing of the transmitting component are integrated into one unit.

2. The high power density X-band high-power solid-state transmitting component according to claim 1, characterized in that, Both the 8-channel space waveguide power divider and the 8-channel space waveguide combiner adopt a double-sided terminal design. The entire space waveguide power divider and combiner unit is made of an upper and lower two-layer structure, made of aluminum alloy, and machined by milling, with a length-to-diameter ratio of no more than 5.

3. The high power density X-band high-power solid-state transmitting component according to claim 1 or 2, characterized in that, The gallium nitride (GaN) final stage power amplifier unit employs a two-stage amplification. After being driven and amplified by the drive amplification unit, the component excitation outputs eight signals through an eight-channel space waveguide power divider. The amplification path of a single signal in the GaN final stage power amplifier unit includes: waveguide-microstrip conversion, GaN pre-stage drive, microstrip power divider, microstrip bridge, and final stage GaN power amplifier device. After amplification, the eight signals are sent to the eight-channel space waveguide combiner via a microstrip probe-waveguide bridge.

4. The high power density X-band high-power solid-state transmitting component according to claim 1, characterized in that, The main power supply module in the power supply unit is a 2400W power supply module of 2 / 3 brick size, which is used to convert 390V DC input to 28V DC output; Its circuit adopts a high-frequency half-bridge LLC resonant topology, with gallium nitride MOSFETs as the primary-side switching transistors and planar transformers as the transformers. The parasitic inductance and capacitance of the transformers are used as the resonant inductance and resonant capacitance. The secondary side adopts synchronous rectification technology. The control section uses an ARM chip.

5. The high power density X-band high-power solid-state transmitting component according to claim 4, characterized in that, The multi-voltage output auxiliary power supply module is an integrated module encapsulated in a metal casing, used to convert 28V input into +5V, -5V and +3.3V output; wherein, the +5V output is implemented by a full-bridge synchronous rectification circuit, the -5V output is implemented by a BUCK-BOOST circuit, and the +3.3V output is implemented by a synchronous BUCK circuit.

6. The high power density X-band high-power solid-state transmitting component according to claim 1, characterized in that, The heat dissipation unit adopts a hamburger-style structure layout. The circuits of the modulation unit and power supply unit, as well as the gallium nitride driver power amplifier unit and the final stage power amplifier unit, are respectively arranged on both sides of the cold plate. The water channel is designed as a two-channel system, with the coolant inlet temperature configured as 40℃ and the flow rate configured as 6L / min.

7. A design method for a high-power-density X-band high-power solid-state transmitter, characterized in that, Includes the following steps: A transmission link is constructed, which sequentially includes a gallium nitride driver power amplifier unit, an 8-channel space waveguide power divider, an 8-channel gallium nitride final stage power amplifier module, and an 8-channel space waveguide combiner. The power-dividing and combining unit consisting of an 8-channel space waveguide power divider and an 8-channel space waveguide combiner, the heat dissipation plate, and the component box are integrated and processed into one unit. A power supply unit is configured for the transmitting component. The power supply unit adopts a high-frequency modular design, in which the main power conversion uses a half-bridge LLC resonant topology and a planar transformer. The components are arranged using a hamburger-style heat dissipation structure, with the modulation circuit, power supply circuit, and power amplifier circuit placed on opposite sides of the heat dissipation plate.

8. The design method according to claim 7, characterized in that, In the integrated processing, the space waveguide power divider unit is made of aluminum alloy material through milling and is designed as a two-layer structure, with the aspect ratio controlled below 5.

9. The design method according to claim 7, characterized in that, The design of the power supply unit includes: The main power supply module is designed to convert 390V input to 28V / 2400W output using a high-frequency half-bridge LLC topology, where the parasitic parameters of a planar transformer are used as resonant elements. Design a multi-voltage output auxiliary power supply module that integrates 28V to +5V, -5V and +3.3V circuits into a metal housing module.

10. The design method according to claim 7, characterized in that, The design of the hamburger-style heat dissipation structure includes: employing water cooling, designing two flow channels within the cold plate, setting the coolant inlet temperature to 40℃, the flow rate to 6L / min, and setting the contact thermal resistance between the cold plate and the power device to 1.25×10⁻⁶. -6 (m 2 k) / W.

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