Chuck structure, tool and semiconductor equipment

By designing a chuck structure with multiple bumps supporting wafers and annular bumps supporting mask holders, the problem of frequent chuck changes was solved, particulate contamination was reduced, and production efficiency and process quality were improved.

CN121793718APending Publication Date: 2026-04-03SHENZHEN SICARRIER IND MACHINES CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-14
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

Existing chuck structures in semiconductor processes require frequent replacements to adapt to different types of processes, which affects production efficiency and easily generates particulate contaminants, leading to a decline in process quality.

Method used

Design a chuck structure comprising a first support portion and a second support portion. The first support portion supports the wafer through multiple bumps, and the second support portion supports the mask tray through annular bumps. The two do not contact each other, reducing the contact area and friction. A dielectric film and a venting groove are used to reduce particulate contamination.

Benefits of technology

This improves the applicability of the chuck structure, reduces the frequency of replacement, decreases the generation of particulate contaminants, and enhances the production efficiency and quality of semiconductor processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

The embodiment of the invention provides a chuck structure, a tool and semiconductor equipment, which are used for widening the application range of the chuck structure, do not need to replace the chuck structure in the process of a semiconductor process, and improve the production efficiency. The chuck structure comprises a chuck body, a first bearing part and a second bearing part, the chuck body is provided with a bearing surface, the first bearing part is a plurality of convex points arranged on the bearing surface, the distance between the upper surfaces of the convex points and the bearing surface is a first distance, and the second bearing part is a second distance. The upper surface of the second bearing part is used for bearing the mask bracket, the distance between the upper surface of the second bearing part and the bearing surface is a second distance, and the second distance is smaller than the first distance. The first bearing part of the chuck structure can bear a wafer and is not in contact with the second bearing part; the second bearing part of the chuck structure can bear the mask plate bracket to bear the mask plate and is not in contact with the first bearing part. The application range of the chuck structure is widened, and the production efficiency is improved.
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Description

Technical Field

[0001] This application relates to the field of semiconductor equipment, specifically to a chuck structure, tooling, and semiconductor equipment. Background Technology

[0002] Semiconductor processes can include mask processing, wafer processing, and wafer testing. Mask processing is used to process masks, while wafer processing is used to process wafers. Wafer testing is used, for example, because during the deposition process on a mask, it is necessary to verify the parameters (thickness, shape, etc.) of the deposited film. Since masks are expensive, verification can be performed on the wafer instead; that is, wafer testing is performed first, followed by mask processing.

[0003] During wafer fabrication and testing, wafers are typically placed on chucks that hold the wafers.

[0004] When performing a mask process, the mask is usually placed on a mask holder, and then the mask holder is placed on a chuck that supports the mask holder.

[0005] The inventors noticed that during production, the type of semiconductor process is frequently switched, and the chuck used to carry the wafer is different from the chuck used to carry the mask tray. Therefore, the chuck needs to be changed frequently to adapt to different types of semiconductor processes, which greatly affects production efficiency. Summary of the Invention

[0006] This application provides a chuck structure, tooling, and semiconductor equipment to improve the applicability of the chuck structure. During semiconductor processes, the chuck structure does not need to be replaced, thus improving production efficiency.

[0007] In a first aspect, embodiments of this application provide a chuck structure for carrying at least one of a wafer and a mask tray. The mask tray carries a mask and includes a tray body and a base, with the base protruding from the edge of the lower surface of the tray body. The chuck structure includes a chuck body, a first support portion, and a second support portion. The chuck body has a support surface. The first support portion consists of multiple protrusions disposed on the support surface. The upper surface of each protrusion is used to contact the wafer to carry the wafer. The distance from the upper surface of the multiple protrusions to the support surface is a first distance. The second support portion is an annular protrusion disposed at the edge of the support surface. The upper surface of the second support portion is used to contact the lower surface of the base to carry the mask tray. The distance from the upper surface of the second support portion to the support surface is a second distance, which is less than the first distance. Furthermore, when the mask tray is carried by the second support portion, there is a gap between the tray body and each protrusion in the first support portion.

[0008] This application provides a chuck structure including a chuck body, a first support portion, and a second support portion. The chuck body has a support surface. The first support portion consists of multiple protrusions disposed on the support surface. The upper surface of each protrusion is used to contact the wafer to support the wafer. The distance from the upper surface of the multiple protrusions to the support surface is a first distance. The second support portion consists of an annular protrusion disposed at the edge of the support surface. The upper surface of the second support portion is used to support a mask holder. The distance from the upper surface of the second support portion to the support surface is a second distance, which is less than the first distance. The first support portion of the chuck structure can support the wafer, and the wafer does not contact the second support portion. The second support portion of the chuck structure can support the mask holder to support the mask, and the mask holder does not contact the first support portion. This improves the applicability of the chuck structure, eliminating the need to change the chuck structure during the deposition process and improving production efficiency.

[0009] Secondly, compared to the method of using annular raised surfaces to support wafers, this application supports wafers using multiple bumps. Since the contact area of ​​the bumps is smaller than that of the annular raised surfaces, this application helps to reduce the contact area between the wafer and the chuck structure, reduce the generation of particulate contaminants, and thus improve the quality of semiconductor processes.

[0010] Finally, considering that mask trays are typically made of relatively soft materials such as aluminum, while bumps are usually quite hard, using bumps to support the mask tray could easily scratch it. Therefore, using a ring-shaped second support portion to support the mask tray helps avoid scratching it, reduces the generation of particulate contaminants, and thus improves semiconductor process quality.

[0011] In some embodiments, the edge of the upper surface of the second support portion is recessed downward to form an annular step, the annular step being used to support an annular process component, the process component being used in a semiconductor process.

[0012] The above settings can further improve the applicability of the chuck structure, enabling it to support not only wafers and mask holders but also ring-shaped process components.

[0013] In some embodiments, the chuck body has a rotation axis perpendicular to the bearing surface, and the distance from each bump to the rotation axis is greater than or equal to 85 mm, or greater than or equal to 1 / 2 of the radius of the wafer.

[0014] With the above configuration, in the embodiment where the chuck structure carries the wafer, the bumps are closer to the edge of the wafer than the center of the wafer. This allows the bumps to provide a greater frictional torque to the wafer during the rotation of the chuck structure, thereby stabilizing the relative position of the wafer and each bump and reducing particulate contaminants generated by friction between the bumps and the wafer.

[0015] In some embodiments, the area of ​​the upper surface of the bump is less than or equal to 0.2 square millimeters, or the area of ​​the upper surface of the bump is less than or equal to 1 / 4000 of the wafer area.

[0016] With the above settings, in the embodiment of the chuck structure carrying the wafer, the contact area between a single bump and the wafer can be reduced, thereby reducing particulate contaminants generated between the bump and the wafer due to friction.

[0017] In some embodiments, the chuck body has a rotation axis perpendicular to the bearing surface, and the plurality of protrusions includes at least one set of protrusions, wherein the plurality of protrusions in each set are at the same distance from the rotation axis.

[0018] With the above settings, multiple bumps can provide friction to the wafer evenly during the rotation of the chuck structure, avoiding displacement between the wafer and the bumps in relative position.

[0019] In the above embodiments, the number of bumps is greater than or equal to 6 and less than or equal to 14.

[0020] In some embodiments, the difference between the outer diameter and the inner diameter of the second carrier portion is greater than or equal to 10 mm and less than or equal to 30 mm; or, it is greater than or equal to 1 / 30 of the wafer diameter and less than or equal to 1 / 10 of the wafer diameter.

[0021] By designing the inner and outer diameters of the second support portion, the area of ​​the upper surface of the second support portion used to support the mask holder can be adjusted. By adjusting the area of ​​the upper surface of the second support portion, the contact stress between the second support portion and the mask holder can be adjusted, thereby reducing particulate contaminants generated by friction between the second support portion and the mask holder.

[0022] In some embodiments of the above examples, the inner diameter of the second support portion is greater than or equal to 300 mm and less than or equal to 285 mm, or greater than or equal to 90% of the wafer diameter and less than or equal to 95% of the wafer diameter; In other embodiments of the above examples, the outer diameter of the second carrier is greater than or equal to 290 mm and less than or equal to 300 mm, or greater than or equal to 95% of the diameter of the wafer and less than or equal to the diameter of the wafer.

[0023] In some embodiments, the inner diameter of the second support portion is larger than the inner diameter of the base.

[0024] By adopting the above configuration, the area of ​​the second support part in contact with the base can be reduced, thereby reducing particulate contaminants generated by friction between the second support part and the mask plate bracket.

[0025] In some embodiments, the chuck structure further includes a dielectric film disposed on the upper surface of the second bearing portion, the dielectric film having a coefficient of friction.

[0026] With the above configuration, a medium film with a different coefficient of friction can be provided on the upper surface of the second support part, thereby adjusting the frictional stress between the second support part and the mask holder, and reducing particulate contaminants generated by friction between the second support part and the mask holder.

[0027] In some embodiments, the chuck structure includes a venting groove that extends through the second support portion to balance the air pressure on the upper and lower sides of the wafer or mask holder.

[0028] With the above settings, in the embodiment where the chuck structure carries the wafer, the venting groove can balance the air pressure on the upper and lower sides of the wafer; in the embodiment where the chuck structure carries the mask tray, the venting groove can balance the air pressure on the upper and lower sides of the mask tray.

[0029] In some embodiments, the chuck structure further includes an opening that extends through the chuck body in a direction perpendicular to the bearing surface; the opening is for a pin structure to pass through in order to lift a wafer or mask holder.

[0030] With the above configuration, in the embodiment where the chuck structure carries the wafer, the ejector pin continues to move upward after passing through the opening and contacting the wafer, in order to lift the wafer so as to remove the wafer from the chuck structure; in the embodiment where the chuck structure carries the mask tray, the ejector pin continues to move upward after passing through the opening and contacting the mask tray, in order to lift the mask tray so as to remove the mask tray from the chuck structure.

[0031] Secondly, this application embodiment also provides a tooling, which includes a mask plate holder and the above-mentioned chuck structure: wherein the mask plate holder includes a holder body and a base, the base being raised at the edge of the lower surface of the holder body; the second bearing portion of the chuck is an annular protrusion disposed at the edge of the bearing surface, and the upper surface of the second bearing portion is used to contact the lower surface of the base to bear the mask plate holder.

[0032] Thirdly, embodiments of this application also provide a semiconductor device, which includes the chuck structure and process chamber described above. The chuck structure is disposed within the process chamber, and the semiconductor structure is used for semiconductor processes.

[0033] Understandably, the beneficial effects of the tooling and semiconductor equipment provided in this application can be referred to the beneficial effects of the chuck structure mentioned above, and will not be repeated here. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 When the chuck structure in the embodiments of this application carries the wafer, the edge Figure 4 A cross-sectional view along direction AA as shown; Figure 2 When the chuck structure supports the mask plate bracket in the embodiments of this application, it is along the... Figure 4 A cross-sectional view along direction AA as shown; Figure 3 When the chuck structure in the embodiments of this application carries the process components, the time edge Figure 4 A cross-sectional view along direction AA as shown; Figure 4 This is a schematic diagram of the chuck structure in an embodiment of this application.

[0036] Explanation of reference numerals in the attached figures: 100-Chuck structure; 110 - Chuck body; 111 - Bearing surface; 120 - First bearing part; 121 - Protrusion; 1211 - First protrusion; 1212 - Second protrusion; 130 - Second load-bearing section; 140 - Dielectric film; 150 - Ventilation slot; 160- Opening; 200-Wafer; 300 - Mask plate bracket; 310 - Bracket body; 320 - Base; 400 - Process Components. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] Hereinafter, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature.

[0039] Furthermore, in the embodiments of this application, directional terms such as "up," "down," "left," "right," "horizontal," and "vertical" are defined relative to the orientation of the components shown in the accompanying drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and can change accordingly depending on the orientation of the components in the accompanying drawings.

[0040] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium.

[0041] It should be noted that, in the description of the embodiments of this application, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection or an integral connection; they can also refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; or they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0042] This application provides a semiconductor device, which can be a thin-film deposition device. The semiconductor device includes a process chamber, which can be used to perform semiconductor processes, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. (Refer to...) Figure 1 and Figure 2 The semiconductor equipment also includes a chuck structure 100, which is used to carry at least one of a wafer 200 and a mask holder 300, and a mask is placed on the mask holder 300; the chuck structure 100 is disposed in the process chamber described above, and the semiconductor equipment is used to perform semiconductor processes on the wafer 200 or the mask on the chuck structure 100.

[0043] This application embodiment also provides a tooling, which includes a chuck structure 100 and a mask plate holder 300; the mask plate holder 300 includes a holder body 310 and a base 320, the base 320 being protruding from the edge of the lower surface of the holder body 310; in the embodiment where the chuck structure 100 carries the mask plate, the mask plate is disposed on the holder body 310 of the mask plate holder 300, the mask plate holder 300 is disposed on the chuck structure 100, and the base 320 of the mask plate holder 300 is in contact with the chuck structure 100.

[0044] This application also provides a chuck structure 100 in two embodiments. The chuck structure 100 includes a chuck body 110, a first support portion 120, and a second support portion 130. The chuck body 110 has a support surface 111. The first support portion 120 and the second support portion 130 are both disposed on the support surface 111. The first support portion 120 is closer to the center of the support surface 111 than the second support portion 130, and the second support portion 130 is closer to the edge of the support surface 111 than the first support portion 120.

[0045] The first support portion 120 may include a plurality of bumps 121, all of which are disposed on the support surface 111. The upper surface of the bumps 121 is used to contact the wafer 200 to support the wafer 200. The second support portion 130 may include an annular protrusion disposed at the edge of the support surface 111 and surrounding the plurality of bumps 121. The second support portion 130 is used to contact the lower surface of the base 320 of the mask holder 300 to support the mask holder 300, and thereby support the mask disposed on the mask holder 300. The distance from the upper surface of the plurality of bumps 121 to the support surface 111 is a first distance L1, and the distance from the upper surface of the second support portion 130 to the support surface 111 is a second distance L2, which is less than the first distance L1. That is, with the support surface 111 as a reference, the first support portion 120 is higher than the second support portion 130. In an embodiment where the chuck structure 100 carries the wafer 200, the upper surface of the first support portion 120 contacts the wafer 200, and there is a gap between the upper surface of the second support portion 130 and the wafer 200; in an embodiment where the chuck structure 100 carries the mask holder 300 to carry the mask, the base 320 of the mask holder 300 contacts the upper surface of the second support portion 130, and there is a gap between the holder body 310 of the mask holder 300 and each protrusion 121 in the first support portion 120.

[0046] The chuck structure 100 provided in this application embodiment includes a chuck body 110, a first support portion 120, and a second support portion 130. The chuck body 110 has a support surface 111. The first support portion 120 consists of a plurality of protrusions 121 disposed on the support surface 111. The upper surface of each protrusion 121 is used to contact a wafer 200 to support the wafer 200. The distance from the upper surface of the plurality of protrusions 121 to the support surface 111 is a first distance L1. The second support portion 130 consists of an annular protrusion disposed on the edge of the support surface 111. The upper surface of the second support portion 130 is used to support a mask holder 300. The distance from the upper surface of the second support portion 130 to the support surface 111 is a second distance L2, which is less than the first distance L1. The first support portion 120 of the chuck structure 100 can support the wafer 200, and the wafer 200 does not contact the second support portion 130; the second support portion 130 of the chuck structure 100 can support the mask holder 300 to support the mask, and the mask holder 300 does not contact the first support portion 120. This improves the applicability of the chuck structure 100, eliminating the need to change the chuck structure 100 during processes such as deposition, thus improving production efficiency.

[0047] Secondly, compared to the method of using an annular raised surface to support the wafer 200, this application supports the wafer 200 through multiple bumps 121. Since the contact area of ​​the bumps 121 is smaller than the area of ​​the annular raised surface, this application is beneficial to reduce the contact area between the wafer 200 and the chuck structure 100, reduce the generation of particulate contaminants, and thus improve the quality of semiconductor process.

[0048] Finally, considering that the mask holder 300 is usually made of a relatively soft material such as aluminum, while the bumps 121 are usually relatively hard, using the bumps 121 to support the mask holder 300 would easily scratch it. Therefore, using the annular second support portion 130 to support the mask holder 300 helps to avoid scratching the mask holder 300, reduce the generation of particulate contaminants, and thus improve the quality of semiconductor processes.

[0049] In the above embodiments, the chuck body 110 has a rotation axis perpendicular to its bearing surface 111.

[0050] In some embodiments, the distance from each bump 121 to the rotation axis is greater than or equal to 85 mm; or, the distance from each bump 121 to the rotation axis is greater than or equal to half the radius of the wafer 200. With the above configuration, in embodiments where the chuck structure 100 carries the wafer 200, the bumps 121 are positioned closer to the edge of the wafer 200 relative to its center. This allows the bumps 121 to provide a greater frictional torque to the wafer 200 during rotation of the chuck structure 100, stabilizing the relative position of the wafer 200 and each bump 121, thereby reducing particulate contaminants generated between the bumps 121 and the wafer 200 due to friction.

[0051] In some embodiments, the area of ​​the upper surface of the bump 121 that contacts the wafer 200 is less than or equal to 1 / 4000 of the area of ​​the wafer 200; for example, the area of ​​the upper surface of the bump 121 that contacts the wafer 200 is less than or equal to 0.2 square millimeters. With the above configuration, in embodiments where the chuck structure 100 carries the wafer 200, the contact area between a single bump 121 and the wafer 200 can be reduced, thereby reducing particulate contaminants generated between the bump 121 and the wafer 200 due to friction.

[0052] In some embodiments, the plurality of bumps 121 may include at least one set of bumps 121, wherein the distances from the multiple bumps 121 in each set of bumps 121 to the rotation axis are the same. This arrangement ensures that during the rotation of the chuck structure 100, the plurality of bumps 121 can uniformly provide friction to the wafer 200, preventing displacement of the relative position between the wafer 200 and the bumps 121. For example, the plurality of bumps 121 may be divided into a plurality of first bumps 1211, all of which are equidistant from the rotation axis. Alternatively, the plurality of bumps 121 may be divided into a plurality of first bumps 1211 and a plurality of second bumps 1212, where both the first bumps 1211 and the second bumps 1212 are equidistant from the rotation axis, and the first bumps 1211 are closer to the rotation axis than the second bumps 1212.

[0053] In the above embodiments, the spacing between the multiple bumps 121 in each group of bumps 121 is the same, which can also make the multiple bumps 121 uniformly provide friction to the wafer 200 during the rotation of the chuck structure 100, and avoid displacement of the relative position between the wafer 200 and the bumps 121.

[0054] In the above embodiments, the number of protrusions 121 is greater than or equal to 6 and less than or equal to 14; in conjunction with the above embodiments, the number of first protrusions 1211 can be 6, and the number of second protrusions 1212 can be 8.

[0055] In some embodiments, the second support portion 130 is an annular protrusion, and the difference between the outer diameter and the inner diameter of the second support portion 130 is greater than or equal to 1 / 30 of the diameter of the wafer 200 and less than or equal to 1 / 10 of the diameter of the wafer 200; exemplaryly, the difference between the outer diameter and the inner diameter of the second support portion 130 is greater than or equal to 10 mm and less than or equal to 30 mm; it can be understood that the second support portion 130 is annular, and the width of the annulus is half of the difference between the outer diameter and the inner diameter of the second support portion 130; the width of the annulus is greater than or equal to 5 mm and less than or equal to 15 mm. In some embodiments, the second support portion 130 is Figure 1 The inner surface shown is a tapered surface that tapers from the upper surface to the lower surface. In this case, the outer diameter and inner diameter of the second support portion 130 can be the outer diameter and inner diameter of the upper surface of the second support portion 130.

[0056] In some embodiments, the inner diameter of the second support portion 130 is greater than or equal to 90% of the diameter of the wafer 200 and less than or equal to 95% of the diameter of the wafer 200; for example, the inner diameter of the second support portion 130 is greater than or equal to 300 mm and less than or equal to 285 mm. In other embodiments, the outer diameter of the second support portion 130 is greater than or equal to 95% of the diameter of the wafer 200 and less than or equal to the diameter of the wafer 200; for example, the inner diameter of the second support portion 130 is greater than or equal to 290 mm and less than or equal to 300 mm. With the above settings, the area of ​​the upper surface of the second support portion 130 used to support the mask holder 300 can be adjusted by designing the dimensions of the inner and outer diameters of the second support portion 130. By adjusting the area of ​​the upper surface of the second support portion 130, the contact stress between the second support portion 130 and the mask holder 300 can be adjusted, thereby reducing particulate contaminants generated by friction between the second support portion 130 and the mask holder 300.

[0057] In some embodiments, the base 320 in the mask holder 300 is also annular, and the base 320 is arranged around the edge of the lower surface of the holder body 310; the inner diameter of the second support portion 130 in the above embodiment is larger than the inner diameter of the base 320; through the above arrangement, the area of ​​the second support portion 130 in contact with the base 320 can be reduced, so as to reduce particulate contaminants generated by friction between the second support portion 130 and the mask holder 300.

[0058] Reference Figure 3In some embodiments, the upper surface of the second support portion 130 is recessed downwards at the edge away from the first support portion 120 to form an annular step. The annular step is used to support the annular process assembly 400, which is used in the aforementioned semiconductor process. The process assembly 400 may include a deposition ring. In plasma processing, by providing a deposition ring, plasma or process byproducts are deposited on the deposition ring, protecting part of the chamber walls and hardware structures from the effects of plasma and process byproducts. The deposition ring is easy to replace, and by periodically replacing the deposition ring, contamination sources can be controlled within a manageable range. Through the above configuration, the applicability of the chuck structure 100 can be further improved, enabling the chuck structure 100 to support not only the wafer 200 and mask holder 300 but also the annular process assembly 400.

[0059] In some embodiments, when the process component 400 is placed on the chuck structure 100, the upper surface of the process component 400 is lower than or flush with the upper surface of the second support portion 130. This allows the chuck structure 100 to simultaneously support the wafer 200 and the process component 400, or simultaneously support the mask tray 300 and the process component 400, which is beneficial for protecting the process component 400 (e.g., deposition ring) in semiconductor processes such as wafer testing, wafer fabrication, and mask fabrication.

[0060] In some embodiments, there is a gap between the inner side of the process component 400 and the outer side of the annular step, which helps to reduce the contact area between the process component 400 and the second support portion 130, and reduce the particles generated by friction between the process component 400 and the second support portion 130, thereby ensuring process quality.

[0061] In some embodiments, the chuck structure 100 further includes a dielectric film 140 disposed on the upper surface of the second support portion 130, and the dielectric film 140 has a coefficient of friction. Through this arrangement, dielectric films 140 with different coefficients of friction can be disposed on the upper surface of the second support portion 130, thereby adjusting the frictional force between the second support portion 130 and the mask holder 300, and thus reducing particulate contaminants generated by friction between the second support portion 130 and the mask holder 300.

[0062] In some embodiments, at least one of the roughness, width, and surface treatment of the upper surface of the second support portion 130 can be determined based on the weight of the mask holder 300, so that the friction between the second support portion 130 and the mask holder 300 is appropriate.

[0063] Reference Figure 4In some embodiments, the chuck structure 100 further includes a venting groove 150, which penetrates the second support portion 130. With this configuration, in embodiments where the chuck structure 100 carries the wafer 200, the venting groove 150 can balance the air pressure on the upper and lower sides of the wafer 200; in embodiments where the chuck structure 100 carries the mask holder 300, the venting groove 150 can balance the air pressure on the upper and lower sides of the mask holder 300. The extending direction of the venting groove 150 can be the radial direction of the second support portion 130 to reduce the length of the venting groove 150 and reduce the area occupied by the venting groove 150 on the upper surface of the second support portion 130. For example, multiple venting grooves 150 can be provided, and the multiple venting grooves 150 are evenly distributed on the second support portion 130.

[0064] In some embodiments, the chuck structure 100 can be used in conjunction with a ejector pin structure; wherein, the chuck structure 100 further includes an opening 160, which penetrates the chuck body 110 in a direction perpendicular to the bearing surface 111. The opening 160 is for the ejector pin structure to pass through; with the above configuration, in the embodiment where the chuck structure 100 carries the wafer 200, after the ejector pin passes through the opening 160 and contacts the wafer 200, it continues to move upward to lift the wafer 200, so as to remove the wafer 200 from the chuck structure 100; in the embodiment where the chuck structure 100 carries the mask tray 300, after the ejector pin passes through the opening 160 and contacts the mask tray 300, it continues to move upward to lift the mask tray 300, so as to remove the mask tray 300 from the chuck structure 100. Exemplarily, multiple openings 160 may be provided, and the multiple openings 160 are evenly arranged on the bearing surface 111.

[0065] The foregoing preferred embodiments have further illustrated the objectives, technical solutions, and advantages of the present invention. It should be understood that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A chuck structure, characterized in that, For carrying at least one of a wafer and a mask tray, the mask tray for carrying a mask, the mask tray including a tray body and a base, the base being protruding from the edge of the lower surface of the tray body; The chuck structure includes: A chuck body, the chuck body having a bearing surface; The first support portion consists of a plurality of protrusions disposed on the support surface. The upper surface of each protrusion is used to contact the wafer to support the wafer. The distance from the upper surface of the plurality of protrusions to the support surface is a first distance. The second support portion is an annular protrusion disposed on the edge of the support surface. The upper surface of the second support portion is used to contact the lower surface of the base to support the mask tray. The distance from the upper surface of the second support portion to the support surface is a second distance, which is less than the first distance. When the second support portion supports the mask tray, there is a gap between the tray body and each protrusion in the first support portion.

2. The chuck structure according to claim 1, characterized in that, The edge of the upper surface of the second support portion is recessed downward to form an annular step, which is used to support an annular process component for semiconductor processing.

3. The chuck structure according to claim 1 or 2, characterized in that, The chuck body has a rotation axis perpendicular to the bearing surface, and the distance from each protrusion to the rotation axis is greater than or equal to 85 mm, or greater than or equal to 1 / 2 of the radius of the wafer.

4. The chuck structure according to claim 1 or 2, characterized in that, The area of ​​the upper surface of the bump is less than or equal to 0.2 square millimeters, or the area of ​​the upper surface of the bump is less than or equal to 1 / 4000 of the wafer area.

5. The chuck structure according to claim 1 or 2, characterized in that, The chuck body has a rotation axis perpendicular to the bearing surface, and the plurality of protrusions include at least one set of protrusions, wherein the plurality of protrusions in each set are at the same distance from the rotation axis.

6. The chuck structure according to claim 1 or 2, characterized in that, The number of the protrusions is greater than or equal to 6 and less than or equal to 14.

7. The chuck structure according to any one of claims 1 or 2, characterized in that, The difference between the outer diameter and the inner diameter of the second support portion is greater than or equal to 10 mm and less than or equal to 30 mm; or, it is greater than or equal to 1 / 30 of the diameter of the wafer and less than or equal to 1 / 10 of the diameter of the wafer.

8. The chuck structure according to claim 7, characterized in that, The inner diameter of the second support portion is greater than or equal to 300 mm and less than or equal to 285 mm, or greater than or equal to 90% of the diameter of the wafer and less than or equal to 95% of the diameter of the wafer; or The outer diameter of the second carrier portion is greater than or equal to 290 mm and less than or equal to 300 mm, or greater than or equal to 95% of the diameter of the wafer and less than or equal to the diameter of the wafer.

9. The chuck structure according to any one of claims 1 or 2, characterized in that, The inner diameter of the second support portion is larger than the inner diameter of the base.

10. The chuck structure according to any one of claims 1 or 2, characterized in that, The chuck structure also includes a dielectric film disposed on the upper surface of the second bearing portion, and the dielectric film has a coefficient of friction.

11. The chuck structure according to any one of claims 1 or 2, characterized in that, The chuck structure includes a venting groove that extends through the second support portion and is used to balance the air pressure on the upper and lower sides of the wafer or the mask holder.

12. The chuck structure according to any one of claims 1 or 2, characterized in that, The chuck structure also includes an opening that penetrates the chuck body in a direction perpendicular to the bearing surface; The opening is for the ejector pin structure to pass through in order to lift the wafer or the mask holder.

13. A tooling, characterized in that, include: A mask plate holder, the mask plate holder comprising a holder body and a base, the base being protruding from the edge of the lower surface of the holder body; And the chuck structure as described in any one of claims 1-12; the second bearing portion of the chuck is an annular protrusion disposed on the edge of the bearing surface, and the upper surface of the second bearing portion is used to contact the lower surface of the base to bear the mask plate holder.

14. A semiconductor device, characterized in that, include: The chuck structure as described in any one of claims 1-12; And a process chamber for semiconductor processes, wherein the chuck structure is disposed within the process chamber.