Display device and method of manufacturing same

Abstract

A display device of the present invention includes: an active layer; a first semiconductor layer disposed on a first surface of the active layer; and a second semiconductor layer disposed on a second surface of the active layer and including a plurality of holes. The first semiconductor layer includes: a plurality of semiconductor regions including a plurality of semiconductors; and a plurality of separation regions disposed between the plurality of semiconductor regions. The second semiconductor layer includes: a plurality of first holes provided to correspond to the plurality of semiconductor regions; a plurality of second holes provided to correspond to the plurality of separation regions; a plurality of color conversion units disposed in the plurality of first holes, and converting light generated from the active layer into output light of different colors; and a plurality of blocking units disposed in the plurality of second holes to prevent interference between light of different colors.

Description

Technical Field

[0001] This disclosure relates to a display device for preventing crosstalk and a method for manufacturing the display device. Background Technology

[0002] Display devices based on liquid crystal displays (LCDs), organic light-emitting diodes (OLEDs), mini LEDs, and micro LEDs are widely used as display devices.

[0003] Micro-LED-based display devices are becoming increasingly popular as next-generation display devices due to their advantages such as high contrast ratio, response speed, color reproduction, viewing angle, brightness, and service life.

[0004] There are several methods that can be used to achieve full color in micro-LED-based display devices.

[0005] For example, a method can be used to position each micro-LED emitting red, green, and blue light in a sub-pixel and then achieve the color of the sub-pixel through color mixing.

[0006] In another example, a method can be used whereby a light conversion material is used in the package of an LED that emits blue or ultraviolet light to induce the emission of white light, and for each sub-pixel, the white light is converted into red, green, or blue light by a color filter and then emitted.

[0007] In another example, a method can be used to locate a color conversion layer using quantum dots on the subpixel, which converts blue light from a micro-LED into red or green light.

[0008] The micro-LED-based display devices described above suffer from crosstalk between adjacent sub-pixels. Summary of the Invention

[0009] Technical problems to be solved

[0010] Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description or may be learned by practice of the embodiments presented.

[0011] One aspect of this disclosure is to provide a display device and a method for manufacturing the display device, the display device including a semiconductor layer with a blocking portion disposed between each of a plurality of color conversion portions.

[0012] Another aspect of this disclosure is to provide a display device and a method for manufacturing the display device, the display device including a semiconductor layer and an active layer, the semiconductor layer having a blocking portion between each of a plurality of color conversion portions, and the active layer having a blocking portion extending from the semiconductor layer.

[0013] Technical solution

[0014] According to one aspect of this disclosure, a display device may include: an active layer; a first semiconductor layer positioned on a first side of the active layer; and a second semiconductor layer positioned on a second side of the active layer. The first semiconductor layer may include: a plurality of semiconductor regions, each semiconductor region including a plurality of semiconductors; and a plurality of separation regions located between the plurality of semiconductor regions. The second semiconductor layer may include: a plurality of first holes disposed in regions of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer; a plurality of second holes disposed in regions of the second semiconductor layer corresponding to the plurality of separation regions of the first semiconductor layer; a plurality of color conversion units configured to convert light generated from the active layer into light of different colors, each of the plurality of color conversion units being positioned in the plurality of first holes; and a plurality of blocking units configured to prevent interference between the light converted into different colors, each of the plurality of blocking units being positioned in the plurality of second holes.

[0015] The plurality of first holes and the plurality of second holes can be formed along a direction from a first side of the second semiconductor layer to a second side of the active layer. The plurality of first holes and the plurality of second holes can be configured to have a length corresponding to the thickness of the second semiconductor layer. The first side of the second semiconductor layer can be the surface from which light is emitted.

[0016] The active layer may include an extension hole formed by extending from the second hole.

[0017] The plurality of first holes can be formed along a direction from the first side of the second semiconductor layer to the second side of the active layer. The plurality of second holes can be formed along a direction from the first side of the second semiconductor layer to the first side of the active layer.

[0018] The plurality of first holes may have a length corresponding to the thickness of the second semiconductor layer. The plurality of second holes may have a length corresponding to the sum of the thickness of the second semiconductor layer and the thickness of the active layer.

[0019] Each of the plurality of semiconductors may include a p-type semiconductor. The second semiconductor layer may include an n-type semiconductor. The active layer may include a multiple quantum well (MQW).

[0020] The display device may further include a color filter layer, which includes a first color filter, a second color filter, and a third color filter positioned adjacent to the plurality of color conversion units, respectively. The first color filter, the second color filter, and the third color filter may be arranged in a row.

[0021] The display device may further include a color filter layer, which includes a first color filter, a second color filter, and a third color filter positioned adjacent to the plurality of color conversion units, respectively. The first and third color filters may be arranged in a row. A second color filter may be positioned in a direction perpendicular to the first and third color filters arranged in the row, and the second color filter may have a size greater than or equal to the sum of the sizes of the first and third color filters.

[0022] The plurality of color conversion units may include: a first color conversion unit configured to convert light generated from the active layer into light of a first color; a second color conversion unit configured to convert light generated from the active layer into light of a second color; and a third color conversion unit configured to convert light generated from the active layer into light of a third color.

[0023] The first and second color conversion units may include a light diffusing agent and a color conversion material. The third color conversion unit may include a light diffusing agent. The color conversion material may include at least one of quantum dots or phosphors.

[0024] The plurality of blocking portions of the display device may include a first blocking portion and a second blocking portion. The first blocking portion is positioned in a second hole between the first color conversion portion and the second color conversion portion, and the second blocking portion is positioned in a second hole between the second color conversion portion and the third color conversion portion. The first blocking portion and the second blocking portion may include an absorbing material or a reflective material.

[0025] According to another aspect of this disclosure, a method of manufacturing a display device may include: stacking an active layer and a second semiconductor layer on a first semiconductor layer, the first semiconductor layer including a plurality of semiconductor regions and a plurality of separation regions, each semiconductor region including a plurality of semiconductors, the plurality of separation regions being positioned between the plurality of semiconductor regions; forming a plurality of first holes in regions of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer, and forming a plurality of second holes in regions of the second semiconductor layer corresponding to the plurality of separation regions of the first semiconductor layer; forming a plurality of color conversion portions in the plurality of first holes; and forming a plurality of blocking portions in the plurality of second holes.

[0026] Forming the plurality of first holes and the plurality of second holes may include: coating the second semiconductor layer with a photoresist; aligning a mask on the photoresist; forming a pattern on the second semiconductor layer by performing photolithography; and stripping the photoresist. The pattern formed on the second semiconductor layer may correspond to the plurality of first holes and the plurality of second holes.

[0027] Forming the plurality of color conversion sections may include forming a first color conversion section, a second color conversion section, and a third color conversion section via a coating method.

[0028] Forming the plurality of color conversion units may include forming a first color conversion unit, a second color conversion unit, and a third color conversion unit via an inkjet method.

[0029] Forming the plurality of blocking portions may include forming a first blocking portion and a second blocking portion via a coating method.

[0030] Forming the plurality of blocking portions may include forming a first blocking portion and a second blocking portion via an inkjet method.

[0031] The method according to another aspect of this disclosure may further include: forming a color filter layer on the second semiconductor layer in which the plurality of color conversion portions and the plurality of blocking portions are formed by a coating method.

[0032] Forming the plurality of first holes and the plurality of second holes may include: coating the second semiconductor layer with a first photoresist; aligning a first mask on the first photoresist; forming a first pattern on the second semiconductor layer by performing photolithography; stripping the first photoresist; coating the second semiconductor layer with a second photoresist; aligning a second mask on the second photoresist; forming a second pattern on the second semiconductor layer and the active layer by performing photolithography; and stripping the second photoresist.

[0033] The first pattern formed on the second semiconductor layer may correspond to the plurality of first holes, and the second pattern formed on the second semiconductor layer and the active layer may correspond to the plurality of second holes.

[0034] The method according to another aspect of this disclosure may further include: forming a color filter layer on the second semiconductor layer in which the plurality of color conversion portions and the plurality of blocking portions are formed by a coating method.

[0035] Forming the plurality of blocking portions may include filling a reflective or absorbing material into a second hole located between the plurality of color conversion portions.

[0036] Beneficial effects

[0037] According to one aspect of this disclosure, the blocking portion can be positioned between the various color conversion portions in a plurality of color conversion portions, thereby preventing crosstalk between the color conversion portions and improving the brightness of the front surface of the display device.

[0038] According to another aspect of this disclosure, the color conversion material can be filled into the pores of the semiconductor layer, thereby preventing the color conversion material from agglomerating.

[0039] According to this disclosure, the color purity and color reproduction of light can be improved by including a color filter.

[0040] According to this disclosure, the marketability of display devices can be improved, user satisfaction and reliability can be increased, and the competitiveness of display devices can be enhanced. Attached Figure Description

[0041] Figure 1 These are views of a display device according to some embodiments of the present disclosure;

[0042] Figure 2 This is a view of a display panel in a display device according to some embodiments of the present disclosure;

[0043] Figure 3 This is a view of a light emitter in a display device according to some embodiments of the present disclosure;

[0044] Figure 4 These are views of a light-emitting device in a display device according to some embodiments of the present disclosure;

[0045] Figure 5a and Figure 5b This is a view of the light-emitting device of a display apparatus according to some embodiments of the present disclosure;

[0046] Figure 5c Based on some embodiments of this disclosure Figure 5b A view of the light-emitting device shown;

[0047] Figure 6a and Figure 6b It is based on some embodiments of this disclosure, located in Figure 5b A schematic diagram of the optical path between the second and third color conversion units of the light-emitting device shown;

[0048] Figure 7a , Figure 7b , Figure 7c , Figure 7d , Figure 7e , Figure 7f , Figure 7g , Figure 7h , Figure 7i , Figure 7j , Figure 7k , Figure 7l , Figure 7m , Figure 7n and Figure 7o The illustrations depict manufacturing processes according to some embodiments of the present disclosure. Figure 5b The method of the light-emitting device shown;

[0049] Figure 8a , Figure 8b , Figure 8c , Figure 8d and Figure 8e The illustrations depict manufacturing processes according to some embodiments of the present disclosure. Figure 5c The method of the light-emitting device shown;

[0050] Figure 9a , Figure 9b , Figure 9c , Figure 9d , Figure 9e , Figure 9f , Figure 9g , Figure 9h , Figure 9i , Figure 9j , Figure 9k and Figure 9l The illustrations depict manufacturing processes according to some embodiments of the present disclosure. Figure 5c The method of the light-emitting device shown;

[0051] Figure 10a and Figure 10b This is a schematic diagram of the light-emitting device of a display device according to some embodiments of the present disclosure;

[0052] Figure 10c Based on some embodiments of this disclosure Figure 10b A schematic diagram of the light-emitting device shown;

[0053] Figure 11a Based on some embodiments of this disclosure Figure 10c A schematic diagram of the color filter layer of the light-emitting device shown;

[0054] Figure 11b and Figure 11c The illustration shows a color filter layer according to some embodiments of the present disclosure;

[0055] Figure 12a and Figure 12b The illustrations depict locations within some embodiments of the present disclosure. Figure 10b The optical path between the second and third color conversion units of the light-emitting device shown; and

[0056] Figure 13a , Figure 13b , Figure 13c , Figure 13d and Figure 13eThe illustrations depict manufacturing processes according to some embodiments of the present disclosure. Figure 10b The method of the light-emitting device shown. Detailed Implementation

[0057] The embodiments described in the specification and the configurations shown in the accompanying drawings are merely examples of this disclosure, and various modifications may be made to replace the embodiments and drawings of this disclosure at the time of filing the application.

[0058] The same reference numerals or symbols shown in the accompanying drawings are components or parts that perform substantially the same function.

[0059] Unless the context clearly indicates otherwise, the singular form of the noun corresponding to an item may include one item or multiple items.

[0060] As used herein, each of the expressions “A or B”, “at least one of A and B”, “at least one of A or B”, “A, B or C”, “at least one of A, B and C”, and “at least one of A, B or C” may include one or all possible combinations of the items listed together with the corresponding expression in the expression.

[0061] It should be understood that the terms “first,” “second,” etc., may be used only to distinguish one component from another, without intending to limit the corresponding component in other respects (e.g., importance or order).

[0062] When one (e.g., the first) component is said to be “connected” or “linked” to another (e.g., the second) component, with or without the terms “functionally” or “communically”, it means that one component can be connected to the other component directly (e.g., via wire), wirelessly, or via a third component.

[0063] It should be understood that when the terms "comprising" and / or "including" are used in this specification, they specify the presence of the stated features, figures, steps, operations, components, elements or combinations thereof, but do not exclude the presence or addition of one or more other features, figures, steps, operations, components, elements or combinations thereof.

[0064] The expression “connected,” “linked,” “supported,” or “in contact” between one component and another includes cases where the components are directly “connected,” “linked,” “supported,” or “in contact” with each other, as well as cases where the components are indirectly “connected,” “linked,” “supported,” or “in contact” with each other through a third component.

[0065] It will also be understood that when a component is referred to as being "on" or "above" another component, the component may be directly on the other component, or there may be an intervening component.

[0066] The term “and / or” includes any and all combinations of one or more of the associated listed items.

[0067] The operating principles and embodiments will be described in detail below with reference to the accompanying drawings.

[0068] Figure 1 The illustration shows a display device according to some embodiments. Figure 2 The illustration shows a display panel in a display device according to some embodiments.

[0069] Display device 1 is a device for displaying visual and three-dimensional image information, such as the display of mobile devices such as laptops, smartphones, and tablets, the monitor of a personal computer PC, a television, the display of a home appliance, and a vehicle display.

[0070] like Figure 1 As shown, display device 1 may include a television.

[0071] The display device 1 includes a main body 10a and a bracket 10b, the main body 10a forming the exterior, and the bracket 10b mounted on the lower end of the main body 10a. The display device 1 can be mounted on a wall without a bracket by means of a bracket or the like.

[0072] Display device 1 may include a display panel 10c positioned on the main body 10a to display images.

[0073] The main body 10a may include a cover that covers the rear side of the display panel 10c.

[0074] The main body 10a may also include a bezel that covers the edge of the display panel 10c. In this case, the cover and the bezel of the main body can be detachably connected to each other.

[0075] like Figure 2 As shown, the display panel 10c may include multiple display modules c1, c2, ... c12.

[0076] The multiple display modules c1, c2, ... c12 can be arranged in a quadrilateral type, such as a rectangular type or a square type.

[0077] Multiple display modules c1, c2, ..., c12 can be positioned adjacent to each other in the vertical and horizontal directions. These display modules can be arranged in an M×N matrix. Here, M and N can be natural numbers. The number of display modules c1, c2, ..., c12 and their arrangement are unrestricted.

[0078] Each of the multiple display modules c1, c2, ... c12 may include a light emitter 100, and light emission devices 100a, 100b and 100c are arranged in the light emitter 100 with micrometer-level dimensions ranging from a few μm to hundreds of μm.

[0079] Multiple light-emitting devices 100a, 100b and 100c can realize multiple pixels.

[0080] Multiple light-emitting devices 100a, 100b and 100c can be positioned adjacent to each other in the vertical and horizontal directions.

[0081] Multiple display modules c1, c2, ..., c12 can have the same structure. Therefore, the description of any one display module can be equally applied to all other display modules.

[0082] Figure 3 The illustration shows a light emitter in a display device according to some embodiments.

[0083] The light emitter 100 may include a substrate 101 and a plurality of light-emitting devices 100a, 100b and 100c.

[0084] The substrate 101 may include a glass substrate and a thin-film transistor (TFT) circuit disposed on the glass substrate, connected to a plurality of light-emitting devices 100a, 100b and 100c, and sending signals to drive the plurality of light-emitting devices 100a, 100b and 100c.

[0085] TFT circuits may include complementary metal-oxide-semiconductor (CMOS) transistors, n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), or p-type MOSFET transistors.

[0086] Each of the plurality of light-emitting devices 100a, 100b and 100c may include a first sub-pixel sp1, a second sub-pixel sp2 and a third sub-pixel sp3.

[0087] Light-emitting devices 100a, 100b, and 100c may have the same structure. The description of light-emitting device 100a described below is equally applicable to the other light-emitting devices 100b and 100c.

[0088] Figure 4 The illustration shows a light-emitting device in a display device according to some embodiments.

[0089] The light-emitting device 100a may include a first semiconductor layer 110, a second semiconductor layer 120, and an active layer 130.

[0090] The first semiconductor layer 110 may include a plurality of semiconductors. Each of the plurality of semiconductors may be a first type semiconductor. The first type may be p-type, that is, the first semiconductor layer 110 may include p-type semiconductors.

[0091] The first semiconductor layer 110 may include multiple semiconductor regions and multiple discrete regions.

[0092] Multiple semiconductor regions can each have multiple semiconductors.

[0093] Multiple separation regions can be regions between individual semiconductors in a plurality of semiconductors. Multiple separation regions can be located between individual semiconductor regions in a plurality of semiconductor regions in the region of the first semiconductor layer 110.

[0094] The first semiconductor layer 110 can be positioned adjacent to the substrate 101.

[0095] p-type semiconductors can include p-type gallium nitride (GaN) semiconductors, p-type aluminum nitride (AlN) semiconductors, or p-type AlxGa(1-x)N (0≤x≤1) semiconductors.

[0096] p-type semiconductors can be gallium nitride (GaN) semiconductors doped with Mg, Ca, Zn, Cd, or Hg.

[0097] The second semiconductor layer 120 may include a second type of semiconductor. The second type may be n-type, that is, the second semiconductor layer 120 may include n-type semiconductors.

[0098] The n-type semiconductor of the second semiconductor layer 120 can be formed into a structure with multiple pores. The structure with multiple pores can be a porous structure, such as a nanoporous structure.

[0099] n-type semiconductors can include n-type semiconductors from the group III to group V series. For example, n-type semiconductors can include n-GaN.

[0100] Alternatively, n-type semiconductors may include n-AlN semiconductors or n-AlxGa(1-x)N (0≤x≤1) semiconductors.

[0101] n-type semiconductors can also be gallium nitride (GaN) semiconductors doped with silicon (Si) or gallium nitride (GaN) semiconductors doped with germanium (Ge).

[0102] The active layer 130 can be positioned between the first semiconductor layer 110 and the second semiconductor layer 120. That is, the first semiconductor layer 110 can be in contact with a first side of the active layer 130, and the second semiconductor layer 120 can be in contact with a second side of the active layer 130.

[0103] In other words, the first semiconductor layer 110, the active layer 130, and the second semiconductor layer 120 can have a stacked structure. The first semiconductor layer 110, the active layer 130, and the second semiconductor layer 120 can be formed by epitaxial growth.

[0104] The active layer 130 can generate light when energized. The light generated from the active layer 130 can pass through the second semiconductor layer 120 and be emitted to the outside.

[0105] Briefly describing the principle of light generation, when an electric current travels through the active layer 130, electrons in the second semiconductor layer 120 can combine with holes in the first semiconductor layer 110 within the active layer. Light can be generated by the combination of electrons and holes.

[0106] The light-emitting device 100a may further include a first electrode a1 and a second electrode a2 for connecting the first semiconductor layer 110 and the second semiconductor layer 120 to the TFT circuit of the substrate 101.

[0107] The first electrode a1 can be connected to the p-type semiconductor of the first semiconductor layer 110. The second electrode a2 can be connected to the n-type semiconductor of the second semiconductor layer 120.

[0108] The first electrode a1 can be the anode electrode, and the second electrode a2 can be the cathode electrode.

[0109] Figure 5a and Figure 5b The illustration shows a detailed configuration of the light-emitting device of a display device according to some embodiments. The structure of a single pixel is described below.

[0110] The light-emitting device may include a first semiconductor layer 110, a second semiconductor layer 120, and an active layer 130.

[0111] like Figure 5a As shown, the first semiconductor layer 110 may include a first p-type semiconductor 111, a second p-type semiconductor 112, and a third p-type semiconductor 113.

[0112] The first p-type semiconductor 111, the second p-type semiconductor 112, and the third p-type semiconductor 113 can be spaced apart from each other in the first semiconductor layer 110 with a regular (i.e., equal) spacing.

[0113] The first p-type semiconductor 111 can be located in the first semiconductor region of the first semiconductor layer, the second p-type semiconductor 112 can be located in the second semiconductor region of the first semiconductor layer, and the third p-type semiconductor 113 can be located in the third semiconductor region of the first semiconductor layer.

[0114] The first separation region can be located between the first semiconductor region and the second semiconductor region, and the second separation region can be located between the second semiconductor region and the third semiconductor region.

[0115] The second semiconductor layer 120 may include an n-type semiconductor 121.

[0116] The n-type semiconductor 121 can be formed into a structure having multiple pores. The structure in which multiple pores are formed can be a porous structure, and can be a nanoporous structure.

[0117] The n-type semiconductor 121 may be a semiconductor having a first thickness d1.

[0118] The multiple holes formed in the n-type semiconductor 121 can be columnar.

[0119] The plurality of holes formed in the n-type semiconductor 121 may have a length corresponding to the first thickness d1 of the n-type semiconductor 121.

[0120] The plurality of holes formed in the n-type semiconductor 121 may have a length from the first side of the n-type semiconductor 121 to the second side of the n-type semiconductor 121.

[0121] The first side of the n-type semiconductor 121 can be the surface from which light is emitted, and the second side of the n-type semiconductor 121 can be the surface in contact with the active layer 130, and can be the second side of the active layer.

[0122] Multiple holes p1 and p2 formed in the n-type semiconductor 121 can be spaced apart by a preset spacing.

[0123] Each of the holes p1 and p2 can have a diameter ranging from a few nm to a few μm.

[0124] Multiple first holes p1 can be positioned in regions of n-type semiconductor 121 corresponding to regions in which first p-type semiconductor 111, second p-type semiconductor 112 and third p-type semiconductor 113 are disposed.

[0125] In other words, multiple first holes p1 can be located in regions of the second semiconductor layer that correspond to multiple semiconductor regions of the first semiconductor layer.

[0126] The region corresponding to the plurality of semiconductor regions may be a region that vertically corresponds to the plurality of semiconductor regions, wherein the active layer is located between the region corresponding to the plurality of semiconductor regions and the plurality of semiconductor regions.

[0127] More specifically, the plurality of first holes p1 may include: a first color hole pr, which is located in a region corresponding to a first semiconductor region in which a first p-type semiconductor 111 is disposed; a second color hole pg, which is located in a region corresponding to a second semiconductor region in which a second p-type semiconductor 112 is disposed; and a third color hole pb, which is located in a region corresponding to a third semiconductor region in which a third p-type semiconductor 113 is disposed.

[0128] Multiple second holes p2 can be positioned in the region of n-type semiconductor 121 corresponding to the first separation region between the first p-type semiconductor 111 and the second p-type semiconductor 112, and in the region corresponding to the second separation region between the second p-type semiconductor 112 and the third p-type semiconductor 113.

[0129] In other words, multiple second holes p2 can be located in regions of the second semiconductor layer that correspond to multiple separate regions of the first semiconductor layer.

[0130] The region corresponding to the plurality of separated regions can be a region that vertically corresponds to the plurality of separated regions, wherein the active layer is located between the region corresponding to the plurality of separated regions and the plurality of separated regions.

[0131] The plurality of second holes p2 may include: a second hole pc located between the first color hole and the second color hole, and a second hole pd located between the second color hole and the third color hole.

[0132] The active layer 130 can be positioned between the first semiconductor layer 110 and the second semiconductor layer 120.

[0133] The active layer 130 may include a single quantum well (SQW) structure or a multiple quantum well (MQW) structure.

[0134] like Figure 5b As shown, the second semiconductor layer 120 may further include a plurality of color conversion portions 122 and a plurality of blocking portions 123. The plurality of color conversion portions 122 are positioned in the first hole p1 of the n-type semiconductor 121, and the plurality of blocking portions 123 are positioned in the second hole p2 of the n-type semiconductor 121.

[0135] Multiple color conversion units 122 can convert light generated from the active layer 130 into light of a first color, a second color, and a third color. The first color can be red (R), the second color can be green (G), and the third color can be blue (B).

[0136] The plurality of color conversion units 122 may include: a first color conversion unit m1, which converts light generated from the active layer 130 into light of a first color; a second color conversion unit m2, which converts light generated from the active layer 130 into light of a second color; and a third color conversion unit m3, which converts light generated from the active layer 130 into light of a third color.

[0137] The first color conversion unit m1 can be set (positioned) in the first color hole pr, the second color conversion unit m2 can be set in the second color hole pg, and the third color conversion unit m3 can be set in the third color hole pb.

[0138] The first color conversion unit m1 can be positioned in the region corresponding to the first p-type semiconductor 111, the second color conversion unit m2 can be positioned in the region corresponding to the second p-type semiconductor 112, and the third color conversion unit m3 can be positioned in the region corresponding to the third p-type semiconductor 113.

[0139] The first color conversion unit m1 can form a first sub-pixel sp1, the second color conversion unit m2 can form a second sub-pixel sp2, and the third color conversion unit m3 can form a third sub-pixel sp3.

[0140] Each of the color conversion units 122 may include a light diffusing agent and may also include a color conversion material.

[0141] The light diffusing agent can be placed in the first color hole PR, the second color hole PG, and the third color hole PB.

[0142] The color conversion material can be placed in the first color hole (PR) and the second color hole (PG) within the first hole. Alternatively, the color conversion material can be placed in the third color hole (PB).

[0143] That is, the first color conversion unit m1 may include a light diffusing agent and a first color conversion material, the second color conversion unit m2 may include a light diffusing agent and a second color conversion material, and the third color conversion unit m3 may include a light diffusing agent. The third color conversion unit m3 may also include a light diffusing agent and a third color conversion material.

[0144] The light diffusing agents of the first color conversion unit m1, the second color conversion unit m2, and the third color conversion unit m3 may be the same or different from each other.

[0145] The first color conversion material, the second color conversion material, and the third color conversion material may differ in at least one of the types, sizes, or shapes of the color conversion materials.

[0146] The first color conversion material, the second color conversion material, and the third color conversion material may have different compositions among the color conversion materials.

[0147] The first color conversion part m1 can be formed by coating or inkjet printing the first color hole pr of the n-type semiconductor with a light diffusing agent and a first color conversion material.

[0148] The second color conversion part m2 can be formed by coating or inkjet printing the second color hole pg of an n-type semiconductor with a light diffusing agent and a second color conversion material.

[0149] The third color conversion section m3 can be formed by coating or inkjet printing the third color aperture pb of the n-type semiconductor with a light diffusing agent. When the third color conversion section m3 includes a color conversion material, it can be formed by coating or inkjet printing the third color aperture pb of the n-type semiconductor with both a light diffusing agent and a third color conversion material.

[0150] Color conversion materials may include at least one of quantum dots (QDs) or phosphors. For example, a color conversion material may consist only of quantum dots. A color conversion material may include both quantum dots and phosphors. A color conversion material may include both quantum dots and multiple phosphors.

[0151] The first color conversion material may include at least one of a first quantum dot or a first phosphor, the second color conversion material may include at least one of a second quantum dot or a second phosphor, and the third color conversion material may include at least one of a third quantum dot or a third phosphor.

[0152] Quantum dots (QDs) are nanoscale semiconductor particles. When a quantum dot is excited by light or electricity, the electrons within it can be excited to a higher energy state. Therefore, quantum dots can emit light of specific wavelengths.

[0153] Quantum dots can include at least one semiconductor material selected from Cd, Se, Zn, S, ZnS, ZnSe, CdSe, InP, CdS, PbS, InP, InAs, GaAs, and GaP. That is, quantum dots can include one or more semiconductor materials. Each quantum dot can have a diameter of tens of nm or smaller, for example, approximately 10 nm or smaller.

[0154] Quantum dots can have a core-shell structure, which may include a core and / or one or more shells. The core and shell may or may not include the same semiconductor material.

[0155] Multiple quantum dots in the first and second color holes may or may not have the same core-shell structure.

[0156] When excited by electricity or light, quantum dots can emit light of a specific wavelength and / or wavelength range (also known as the "emission wavelength" of a quantum dot).

[0157] More specifically, for example, a quantum dot can absorb one or more photons with wavelengths shorter than the quantum dot's emission wavelength, and can emit one or more photons with wavelengths longer than the emission wavelength.

[0158] When quantum dots are disposed in the first color conversion unit, the second color conversion unit, and the third color conversion unit, the quantum dots may include: a first quantum dot having a first emission wavelength, a second quantum dot having a second emission wavelength, and a third quantum dot having a third emission wavelength.

[0159] When quantum dots are placed in a first color hole, a second color hole, and a third color hole, the first quantum dot can be placed in the first color hole, the second quantum dot can be placed in the second color hole, and the third quantum dot can be placed in the third color hole.

[0160] Quantum dots can be placed in color holes pr, pg, and pb separated by separators, thereby minimizing the aggregation of quantum dots. The separators can refer to n-type semiconductors other than the holes.

[0161] When a quantum dot is included in a first color conversion unit, a second color conversion unit, and a third color conversion unit, the first quantum dot can be included in the first color conversion unit m1, the second quantum dot can be included in the second color conversion unit m2, and the third quantum dot can be included in the third color conversion unit m3.

[0162] The first quantum dot can convert light generated from the active layer into light with a first emission wavelength, and the second quantum dot can convert light generated from the active layer into light with a second emission wavelength.

[0163] When a third quantum dot is provided, the third quantum dot can convert light generated from the active layer 130 into light with a third emission wavelength.

[0164] The light with the first emission wavelength can be red light, the light with the second emission wavelength can be green light, and the light with the third emission wavelength can be blue light.

[0165] The light generated from the active layer 130 via the first semiconductor layer 110 and the second semiconductor layer 120 can be white light or blue light.

[0166] The first, second, and third quantum dots can have different sizes, shapes, and compositions to emit light at different wavelengths.

[0167] The first quantum dot, the second quantum dot, and the third quantum dot may or may not contain different semiconductor materials.

[0168] Multiple blocking parts 123 can be set (positioned) in the second hole p2.

[0169] Multiple blocking portions 123 can be positioned in a second hole (p2:pc) corresponding to the separation region between the first p-type semiconductor 111 and the second p-type semiconductor 112, and can be positioned in a second hole (p2:pd) corresponding to the separation region between the second p-type semiconductor 112 and the third p-type semiconductor 113.

[0170] The plurality of blocking portions 123 may include a first blocking portion 123a and a second blocking portion 123b, wherein the first blocking portion 123a is positioned in a region corresponding to the separation region between the first p-type semiconductor 111 and the second p-type semiconductor 112, and the second blocking portion 123b is positioned in a region corresponding to the separation region between the second p-type semiconductor 112 and the third p-type semiconductor 113.

[0171] In other words, multiple blocking parts 123 can be provided in the second hole (p2:pc) located between the first color conversion part m1 and the second color conversion part m2, and can also be provided in the second hole (p2:pd) located between the second color conversion part m2 and the third color conversion part m3.

[0172] The multiple blocking portions 123 can prevent light interference between the first color conversion unit m1 and the second color conversion unit m2, as well as light interference between the second color conversion unit m2 and the third color conversion unit m3, and thus can reduce or eliminate crosstalk. As a result, the optical properties of the display device 1 can be improved.

[0173] More specifically, when the color of light is converted by the first color conversion unit m1, the second color conversion unit m2 and the third color conversion unit m3, the plurality of blocking units 123 can block a portion of the light converted in the second color conversion unit m2 from flowing into the first color conversion unit m1, and block a portion of the light converted in the third color conversion unit m3 from flowing into the second color conversion unit m2.

[0174] In other words, the multiple blocking portions 123 can prevent light interference between sub-pixels sp1, sp2, and sp3. That is, the multiple blocking portions 123 can prevent light interference between the first sub-pixel sp1 and the second sub-pixel sp2, as well as light interference between the second sub-pixel sp2 and the third sub-pixel sp3.

[0175] Each blocking part 123 may include an absorbing material or a reflective material.

[0176] The absorbent material may include nickel (Ni).

[0177] Absorbent materials may also include UV-curable acrylic resins, polyurethane resins, epoxy resins, etc., containing black pigments or black dyes.

[0178] Reflective materials can include nanoparticle materials.

[0179] Reflective materials may include titanium dioxide (TiO2).

[0180] Reflective materials may also include aluminum (Al) or silver (Ag).

[0181] Absorbent or reflective materials can be applied to the second hole p2 by inkjet printing or coating.

[0182] Figure 5c The illustrations depict some embodiments. Figure 5b The light-emitting device shown.

[0183] Whether to provide a color filter layer 140 can be determined by the following: the type of color conversion material included in the plurality of color conversion sections of the second semiconductor layer 120, the ratio between the amount of color conversion material and the amount of light diffusing agent, the density of color conversion material in each hole, etc.

[0184] If the color conversion rate of the light converted by each color conversion unit 122 is less than or equal to the reference conversion rate, the light-emitting device may also include a color filter layer 140.

[0185] The light-emitting device may include a first semiconductor layer 110, a second semiconductor layer 120, and an active layer 130, and may also include a color filter layer 140. Here, the configuration of the first semiconductor layer 110, the second semiconductor layer 120, and the active layer 130 is similar to... Figure 5a and Figure 5b The configuration is the same, and therefore its description is omitted.

[0186] The color filter layer 140 can be positioned adjacent to the first side of the second semiconductor layer 120.

[0187] The color filter layer 140 can increase the color reproduction rate of light whose colors are converted by multiple color conversion units 122.

[0188] The color filter layer 140 may include: a first color filter 141 having a first color, a second color filter 142 having a second color, and a third color filter 143 having a third color.

[0189] Here, the first color filter 141 can be a red color filter, the second color filter 142 can be a green color filter, and the third color filter 143 can be a blue color filter.

[0190] The first color filter 141 can be positioned in the area corresponding to the first color conversion unit m1, the second color filter 142 can be positioned in the area corresponding to the second color conversion unit m2, and the third color filter 143 can be positioned in the area corresponding to the third color conversion unit m3.

[0191] In other words, the first color filter 141 can be set in the area corresponding to the first sub-pixel sp1, the second color filter 142 can be set in the area corresponding to the second sub-pixel sp2, and the third color filter 143 can be set in the area corresponding to the third sub-pixel sp3.

[0192] The first color filter 141, the second color filter 142, and the third color filter 143 can be formed on one side of the first color conversion part m1, the second color conversion part m2, and the third color conversion part m3 by coating method.

[0193] The first color filter 141 can increase the color reproduction rate of light whose color is converted in the first color conversion unit m1, the second color filter 142 can increase the color reproduction rate of light whose color is converted in the second color conversion unit m2, and the third color filter 143 can increase the color reproduction rate of light whose color is converted in the third color conversion unit m3.

[0194] In other words, the first color filter 141 can increase the color reproduction rate of red light, the second color filter 142 can increase the color reproduction rate of green light, and the third color filter 143 can increase the color reproduction rate of blue light.

[0195] Figure 6a and Figure 6b The illustration shows a location located in some embodiments. Figure 5b The optical path between the second and third color conversion units of the light-emitting device shown.

[0196] Figure 6a The diagram illustrates the optical path between the second color conversion unit m2 and the third color conversion unit m3, which is the optical path of a light-emitting device including a blocking part 123 containing an absorbing material.

[0197] In the light generated from the active layer 130 and then converted in color in the third color conversion section m3, the light traveling to the second color conversion section m2 can be blocked by the absorbing material of the blocking section 123.

[0198] In other words, the blocking part 123 can block some of the light from the third color conversion part m3 from flowing into the second color conversion part m2. Therefore, crosstalk between the second color conversion part m2 and the third color conversion part m3 can be reduced.

[0199] Figure 6bThe diagram illustrates the optical path between the second color conversion unit m2 and the third color conversion unit m3, which is the optical path of a light-emitting device including a blocking part 123 containing reflective material.

[0200] In the light generated from the active layer 130 and then converted in color in the third color conversion unit m3, the light traveling to the second color conversion unit m2 can be reflected by the reflective material of the blocking part 123. That is, the blocking part 123 can reflect some of the light converted in color in the third color conversion unit m3, thereby preventing some of the light from the third color conversion unit m3 from flowing into the second color conversion unit m2. Therefore, crosstalk between the second color conversion unit m2 and the third color conversion unit m3 can be reduced.

[0201] The reflective material of the multiple blocking parts 123 provided in the light-emitting device can improve the front illumination of the display device.

[0202] Figure 7a , Figure 7b , Figure 7c , Figure 7d , Figure 7e , Figure 7f , Figure 7g , Figure 7h , Figure 7i , Figure 7j , Figure 7k , Figure 7l , Figure 7m , Figure 7n and Figure 7o The illustration shows a product manufactured according to some embodiments. Figure 5b The method of the light-emitting device shown.

[0203] Figure 7a , Figure 7b , Figure 7c , Figure 7d , Figure 7e , Figure 7f , Figure 7g , Figure 7h , Figure 7i , Figure 7j , Figure 7k , Figure 7l , Figure 7m , Figure 7n and Figure 7o The illustration shows the process of forming multiple color conversion sections and multiple blocking sections by coating.

[0204] like Figure 7a As shown, the first process involves stacking a first semiconductor layer 110, an active layer 130, and a second semiconductor layer 120 to form an initial light-emitting device. Forming the initial light-emitting device may include manufacturing the light-emitting device by an epitaxial method.

[0205] The initial light-emitting device may be without holes in the n-type semiconductor 121 of the second semiconductor layer 120. The initial light-emitting device may be a blue light-emitting device that emits blue light through the entire region of the first side of the second semiconductor layer.

[0206] like Figure 7b As shown, the second process involves coating the n-type semiconductor 121 of the second semiconductor layer 120 with photoresist PR to form a photoresist layer 150 on the first side of the n-type semiconductor 121.

[0207] Coating methods may include spin coating or slot coating.

[0208] like Figure 7c As shown, the third process involves aligning a mask on the photoresist layer 150, exposing it to light, and then developing a pattern on the photoresist layer 150.

[0209] The mask can be imprinted with a pattern for forming multiple holes.

[0210] like Figure 7d As shown, the fourth process involves etching a pattern on the n-type semiconductor 121 that corresponds to the pattern of the photoresist layer 150, and then stripping the photoresist layer 150.

[0211] The pattern formed on the n-type semiconductor 121 can be a pattern corresponding to multiple holes p1 and p2.

[0212] like Figure 7e As shown, the fifth process involves coating the semiconductor 121 in which multiple holes p1 and p2n are formed with a red photoresist 151, so that the multiple holes can be filled with the red photoresist.

[0213] Filling multiple holes with red photoresist can include: filling multiple holes with red photoresist.

[0214] Red photoresist 151 can be a mixture of a light diffusing agent and a first color conversion material.

[0215] Coating methods may include spin coating or slot coating.

[0216] like Figure 7f As shown, the sixth process involves aligning the mask 152 on the area other than the area where the first color conversion part m1 is to be formed, and then performing photolithography.

[0217] Performing photolithography can include performing exposure and development.

[0218] like Figure 7gAs shown, the seventh process is to strip the red photoresist 151 formed in the area other than the area where the first color conversion part m1 is to be formed, thereby allowing the first color conversion part m1 to be formed from the remaining red photoresist 151.

[0219] Stripping the red photoresist 151 formed in the area other than the area where the first color conversion part m1 is to be formed may include: stripping the red photoresist 151 that is filled in the second hole p2 and in the second color hole pg and the third color hole pb in the first hole.

[0220] like Figure 7h As shown, the eighth process involves coating the area of ​​the n-type semiconductor 121, excluding the area of ​​the first color conversion section m1, with green photoresist to allow the remaining holes to be filled with green photoresist. Here, the remaining holes may include the second color hole pg and the third color hole pb among the first holes, and may also include the second hole p2.

[0221] Green photoresist can include light diffusing agents and second color conversion materials.

[0222] like Figure 7i As shown, the ninth process involves aligning the mask 154 on the area other than the area where the first color conversion part m1 and the second color conversion part m2 are to be formed, and then performing photolithography.

[0223] like Figure 7j As shown, the tenth process is to strip the green photoresist 153 formed in the area other than the area where the first color conversion part m1 and the second color conversion part m2 are to be formed, thereby allowing the second color conversion part m2 to be formed from the remaining green photoresist.

[0224] like Figure 7k As shown, in the eleventh process, blue photoresist can be applied to the area of ​​the n-type semiconductor 121 other than the area of ​​the first color conversion part m1 and the second color conversion part m2 to allow the remaining holes to be filled with blue photoresist. The mask can be aligned on the area where the first blocking part 123a and the second blocking part 123b are to be formed, photolithography can be performed, and then the blue photoresist filled in the second hole p2 can be stripped to form the third color conversion part m3.

[0225] Blue photoresist may include light diffusing agents.

[0226] The remaining holes filled with blue photoresist may include the third color hole pb in the first hole and the second hole p2.

[0227] Alternatively, the third color conversion part m3 can be formed by spreading a blue photoresist on the area where the third color conversion part m3 is to be formed.

[0228] The area to form the third color conversion part m3 may include the area to form the third color hole pb.

[0229] like Figure 7l As shown, the twelfth process involves coating an n-type semiconductor 121, in which a first color conversion section m1, a second color conversion section m2, and a third color conversion section m3 are formed, with an absorbing or reflective material to form a first blocking section 123a and a second blocking section 123b.

[0230] By coating the n-type semiconductor 121 with an absorbing or reflective material, the second hole p2 can be filled with the absorbing or reflective material.

[0231] Coating methods may include spin coating or slot coating.

[0232] like Figure 7m As shown, the thirteenth process involves aligning a mask 155 on an n-type semiconductor 121 in which the first color conversion section m1, the second color conversion section m2, and the third color conversion section m3 are formed, and applying heat to harden the first blocking section 123a and the second blocking section 123b. In this case, by performing exposure and development, any remaining reflective or absorbing material in the first color conversion section m1, the second color conversion section m2, and the third color conversion section m3 can be removed.

[0233] like Figure 7n As shown, the fourteenth process is to bake the light-emitting device in which the first color conversion part m1, the second color conversion part m2 and the third color conversion part m3, as well as the first blocking part 123a and the second blocking part 123b are formed.

[0234] Through the above process, it is possible to complete the following: Figure 7o The light-emitting device shown.

[0235] Figure 8a , Figure 8b , Figure 8c , Figure 8d and Figure 8e The illustration shows the manufacturing process according to some embodiments. Figure 5c The method of the light-emitting device shown.

[0236] Figure 8a , Figure 8b , Figure 8c , Figure 8d and Figure 8e The illustration shows the process of forming multiple color conversion sections and multiple blocking sections using an inkjet method.

[0237] First, it can be done in Figure 7a , Figure 7b , Figure 7c and Figure 7d The process shown forms multiple holes p1 and p2 in the n-type semiconductor 121.

[0238] like Figure 8a As shown, the first process involves distributing red ink to a region of an n-type semiconductor in which multiple holes p1 and p2 are formed, and in which a first color hole pr is formed, thereby forming a first color conversion unit m1.

[0239] like Figure 8b As shown, the second process forms the second color conversion unit m2 and the third color conversion unit m3 through the same process as that used to form the first color conversion unit m1.

[0240] In other words, the second process involves distributing green ink to the region of the n-type semiconductor in which the second color hole pg is formed to form the second color conversion section m2 by inkjet printing, and distributing blue ink to the region of the n-type semiconductor in which the third color hole pb is formed by inkjet printing to form the third color conversion section m3.

[0241] Alternatively, the third color conversion part m3 can be formed by spreading a blue photoresist on the area where the third color conversion part m3 is to be formed.

[0242] like Figure 8c As shown, the third process involves distributing reflective or absorbent ink onto the region of an n-type semiconductor in which the second hole p2 is formed by inkjet printing, thereby forming the first blocking portion 123a and the second blocking portion 123b.

[0243] like Figure 8d As shown, the fourth process is baking the light-emitting device in which the first color conversion part m1, the second color conversion part m2 and the third color conversion part m3, as well as the first blocking part 123a and the second blocking part 123b are formed.

[0244] Through the above process, it can be completed Figure 8e The light-emitting device shown.

[0245] Figure 9a , Figure 9b , Figure 9c , Figure 9d , Figure 9e , Figure 9f , Figure 9g , Figure 9h , Figure 9i , Figure 9j , Figure 9k and Figure 9l The illustration shows a product manufactured according to some embodiments. Figure 5c The method of the light-emitting device shown.

[0246] like Figure 9a As shown, the first process is to prepare a light-emitting device including an n-type semiconductor 121 provided with a first color conversion part m1, a second color conversion part m2 and a third color conversion part m3, a first blocking part 123a and a second blocking part 123b.

[0247] like Figure 9b As shown, the second process involves coating a second semiconductor layer 120, comprising an n-type semiconductor 121 in which a first color conversion section m1, a second color conversion section m2, and a third color conversion section m3, as well as a first blocking section 123a and a second blocking section 123b, onto a first side of the second semiconductor layer 120 using a photoresist PR for the first color filter. This forms a photoresist layer 160 for the first color filter (hereinafter referred to as the "first color filter photoresist layer"). The photoresist used for the first color filter can be a red photoresist.

[0248] Coating methods may include spin coating or slot coating.

[0249] like Figure 9c As shown, the third process involves aligning the mask 161 on the area of ​​the first color filter photoresist layer 160, excluding the area of ​​the first color conversion section m1, exposing it to light, and then performing development.

[0250] like Figure 9d As shown, the fourth process involves peeling off the coated first color filter photoresist layer 160 from the second semiconductor layer 120, thereby forming the first color filter 141 in the region of the first color conversion section m1.

[0251] like Figure 9e As shown, the fifth process is baking the light-emitting device in which the first color filter 141 is formed.

[0252] like Figure 9f As shown, the sixth process involves coating a portion of the first side of the second semiconductor layer 120 with a photoresist 162 for the second color filter, thereby forming a photoresist layer 162 for the second color filter (hereinafter referred to as the "second color filter photoresist layer") on said portion of the first side of the second semiconductor layer 120. The photoresist for the second color filter may be a green photoresist.

[0253] The portion of the first side of the second semiconductor layer 120 may include the area of ​​the first side of the second semiconductor layer 120 other than the area where the first color filter is formed.

[0254] like Figure 9gAs shown, the seventh process involves aligning the mask 163 on the area of ​​the second color filter photoresist layer 162, excluding the areas of the first color conversion section m1 and the second color conversion section m2, exposing it to light, and then performing development.

[0255] like Figure 9h As shown, the eighth process involves peeling off the second color filter photoresist layer 162 coated on the region of the third color conversion part m3 and the regions of the first blocking part 123a and the second blocking part 123b from the second semiconductor layer 120, thereby forming the second color filter 142 in the region of the second color conversion part m2, and baking the light-emitting device in which the second color filter 142 is formed.

[0256] like Figure 9i As shown, the ninth process involves coating a portion of the first side of the second semiconductor layer 120, where the first and second color filters 141 are formed, with a photoresist 164 for the third color filter, thereby forming a photoresist layer 164 for the third color filter (hereinafter referred to as the "third color filter photoresist layer") in that portion of the first side of the second semiconductor layer 120. The photoresist for the third color filter may be a blue photoresist.

[0257] The portion of the first side of the second semiconductor layer 120 may include the regions of the first blocking portion 123a and the second blocking portion 123b, as well as the region of the third color conversion portion m3.

[0258] like Figure 9j As shown, the tenth process involves aligning the mask 165 on the area of ​​the third color filter photoresist layer 164 excluding the areas of the first color conversion section m1, the second color conversion section m2, and the third color conversion section m3, exposing it to light, and then performing development. The area of ​​the third color filter photoresist layer 164 excluding the areas of the first color conversion section m1, the second color conversion section m2, and the third color conversion section m3 can be the area of ​​the first blocking section 123a and the second blocking section 123b.

[0259] like Figure 9k As shown, the eleventh process involves peeling off the third color filter photoresist layer 164 coated on the regions of the first blocking portion 123a and the second blocking portion 123b from the second semiconductor layer 120, thereby forming the third color filter 143 in the region of the third color conversion portion m3, and baking the light-emitting device in which the third color filter 143 is formed.

[0260] Through the above process, it can be completed Figure 9l The light-emitting device shown.

[0261] Figure 10a and Figure 10b The illustration shows the light-emitting device of a display device according to some embodiments. The structure of a single pixel is described below.

[0262] The light-emitting device may include a first semiconductor layer 110, a second semiconductor layer 120, and an active layer 130.

[0263] like Figure 10a As shown, the first semiconductor layer 110 may include a first p-type semiconductor 111, a second p-type semiconductor 112, and a third p-type semiconductor 113.

[0264] The first p-type semiconductor 111, the second p-type semiconductor 112, and the third p-type semiconductor 113 can be spaced apart from each other at regular intervals in the first semiconductor layer 110.

[0265] The second semiconductor layer 120 may be a layer having a first thickness d1.

[0266] The second semiconductor layer 120 may include an n-type semiconductor 121.

[0267] The n-type semiconductor 121 can be formed into a structure with multiple pores. The structure forming multiple pores can be a porous structure, and can be a nanoporous structure.

[0268] The active layer 130 can be positioned between the first semiconductor layer 110 and the second semiconductor layer 120. That is, the first semiconductor layer 110 can be in contact with a first side of the active layer 130, and the second semiconductor layer 120 can be in contact with a second side of the active layer.

[0269] The active layer 130 may include a single quantum well (SQW) structure or a multiple quantum well (MQW) structure.

[0270] The active layer 130 can be a layer with a second thickness d2.

[0271] The active layer 130 may include extension holes, each extension hole being formed by extending from a second hole in the second semiconductor layer.

[0272] The multiple holes formed in the n-type semiconductor 121 and the multiple extended holes formed in the active layer can be columnar. Each hole p1 and p2 can have a diameter of several nm to several μm.

[0273] In other words, the first hole and the second hole can be disposed in the second semiconductor layer, and the extended hole formed by extending from the second hole can be disposed in the active layer.

[0274] Multiple first holes p1 can be positioned in regions of n-type semiconductor 121 corresponding to regions in which first p-type semiconductor 111, second p-type semiconductor 112 and third p-type semiconductor 113 are disposed.

[0275] More specifically, the plurality of first holes p1 may include: a first color hole pr, which is located in the region corresponding to the region where the first p-type semiconductor 111 is disposed; a second color hole pg, which is located in the region corresponding to the region where the second p-type semiconductor 112 is disposed; and a third color hole pb, which is located in the region corresponding to the region where the third p-type semiconductor 113 is disposed.

[0276] Among multiple holes, the first hole may have a first length.

[0277] The first aperture may have a length corresponding to the first thickness d1 of the n-type semiconductor 121. The first aperture may have a length from a first side of the n-type semiconductor 121 to a second side of the n-type semiconductor 121.

[0278] The first side of the n-type semiconductor 121 can be the surface from which light is emitted, and the second side of the n-type semiconductor 121 can be the surface in contact with the active layer 130, and can be the second side of the active layer 130.

[0279] Multiple second holes p2 can be positioned in the region of n-type semiconductor 121 corresponding to the separation region between the first p-type semiconductor 111 and the second p-type semiconductor 112, and in the region of n-type semiconductor 121 corresponding to the separation region between the second p-type semiconductor 112 and the third p-type semiconductor 113.

[0280] The plurality of second holes p2 may include a second hole pc located between the first color hole and the second color hole, and a second hole pd located between the second color hole and the third color hole.

[0281] Among the multiple holes, the second hole p2 can have a second length. Here, the second length can be longer than the first length.

[0282] The second hole p2 may have a length corresponding to the sum of the first thickness d1 of the second semiconductor layer 120 and the second thickness d2 of the active layer 130.

[0283] The second hole p2 may have a length from the first side of the n-type semiconductor 121 to the first side of the active layer 130.

[0284] The first side of the n-type semiconductor 121 can be the surface from which light is emitted, and the first side of the active layer 130 can be the surface where the first semiconductor layer 110 and the active layer 130 are in contact.

[0285] like Figure 10bAs shown, the second semiconductor layer 120 may further include a plurality of color conversion sections 122 and a plurality of blocking sections 123. The plurality of color conversion sections 122 are disposed in the first hole p1 of the n-type semiconductor 121, and the plurality of blocking sections 123 are disposed in the second hole p2 and the extension hole of the active layer 130. The extension hole of the active layer 130 may be a part of the second hole p2.

[0286] Multiple color conversion units 122 can convert light generated from the active layer 130 into light of a first color, a second color, and a third color. The first color can be red (R), the second color can be green (G), and the third color can be blue (B).

[0287] The multiple color conversion units 122 may include: a first color conversion unit m1 that converts light generated from the active layer 130 into light of a first color, a second color conversion unit m2 that converts light generated from the active layer 130 into light of a second color, and a third color conversion unit m3 that converts light generated from the active layer 130 into light of a third color.

[0288] The first color conversion unit m1 can be installed in the first color hole pr, the second color conversion unit m2 can be installed in the second color hole pg, and the third color conversion unit m3 can be installed in the third color hole pb.

[0289] Among the multiple regions of the first semiconductor layer 110, the first color conversion unit m1 can be located in the region corresponding to the first p-type semiconductor 111, the second color conversion unit m2 can be located in the region corresponding to the second p-type semiconductor 112, and the third color conversion unit m3 can be located in the region corresponding to the third p-type semiconductor 113.

[0290] The first color conversion unit m1 can form a first sub-pixel sp1, the second color conversion unit m2 can form a second sub-pixel sp2, and the third color conversion unit m3 can form a third sub-pixel sp3.

[0291] Each color conversion unit 122 may include a light diffusing agent and may also include a color conversion material.

[0292] The light diffusing agent can be placed in the first color hole PR, the second color hole PG, and the third color hole PB.

[0293] The color conversion material can be placed in the first color hole (PR) and the second color hole (PG) within the first hole. Alternatively, the color conversion material can be placed in the third color hole (PB).

[0294] That is, the first color conversion unit m1 may include a light diffusing agent and a first color conversion material, the second color conversion unit m2 may include a light diffusing agent and a second color conversion material, and the third color conversion unit m3 may include a light diffusing agent. The third color conversion unit m3 may also include a light diffusing agent and a third color conversion material.

[0295] The light diffusing agents of the first color conversion unit m1, the second color conversion unit m2, and the third color conversion unit m3 may be the same or different from each other.

[0296] The first color conversion material, the second color conversion material, and the third color conversion material may differ in at least one of the types, sizes, or shapes of the color conversion materials.

[0297] The first color conversion material, the second color conversion material, and the third color conversion material may have different compositions among the color conversion materials.

[0298] The first color conversion part m1 can be formed by coating or inkjet printing the first color hole pr of the n-type semiconductor with a light diffusing agent and a first color conversion material.

[0299] The second color conversion part m2 can be formed by coating or inkjet printing the second color hole pg of an n-type semiconductor with a light diffusing agent and a second color conversion material.

[0300] The third color conversion section m3 can be formed by coating or inkjet printing the third color aperture pb of the n-type semiconductor with a light diffusing agent. When the third color conversion section m3 includes a color conversion material, it can be formed by coating or inkjet printing the third color aperture pb of the n-type semiconductor with both a light diffusing agent and a third color conversion material.

[0301] Color conversion materials may include at least one of quantum dots (QDs) or phosphors. For example, a color conversion material may consist only of quantum dots. A color conversion material may include both quantum dots and phosphors. A color conversion material may include both quantum dots and multiple phosphors.

[0302] The first color conversion material may include at least one of a first quantum dot or a first phosphor, the second color conversion material may include at least one of a second quantum dot or a second phosphor, and the third color conversion material may include at least one of a third quantum dot or a third phosphor.

[0303] The first quantum dot, the second quantum dot, and the third quantum dot may differ in at least one of the types, sizes, or shapes of quantum dot materials.

[0304] Multiple blocking portions 123 can be positioned in the second hole p2. Here, the second hole may include the second hole of the n-type semiconductor 121 and the extension hole of the active layer 130.

[0305] Multiple blocking portions 123 can be positioned in a second hole (p2:pc) corresponding to the separation region located between the first p-type semiconductor 111 and the second p-type semiconductor 112, and can be positioned in a second hole (p2:pd) corresponding to the separation region located between the second p-type semiconductor 112 and the third p-type semiconductor 113.

[0306] The plurality of blocking portions 123 may include a first blocking portion 123a and a second blocking portion 123b, wherein the first blocking portion 123a is positioned in a region corresponding to a separation region between a first p-type semiconductor 111 and a second p-type semiconductor 112, and the second blocking portion 123b is positioned in a region corresponding to a separation region between a second p-type semiconductor 112 and a third p-type semiconductor 113.

[0307] In other words, multiple blocking parts 123 can be provided in the second hole (p2:pc) located between the first color conversion part m1 and the second color conversion part m2, and can also be provided in the second hole (p2:pd) located between the second color conversion part m2 and the third color conversion part m3.

[0308] The multiple blocking portions 123 can prevent light interference between the first color conversion unit m1 and the second color conversion unit m2, as well as light interference between the second color conversion unit m2 and the third color conversion unit m3, and thus can reduce or eliminate crosstalk. As a result, the optical properties of the display device 1 can be improved.

[0309] More specifically, when the color of light is converted by the first color conversion unit m1, the second color conversion unit m2 and the third color conversion unit m3, the plurality of blocking units 123 can block a portion of the light converted in the second color conversion unit m2 from flowing into the first color conversion unit m1, and block a portion of the light converted in the third color conversion unit m3 from flowing into the second color conversion unit m2.

[0310] In other words, the multiple blocking portions 123 can prevent light interference between sub-pixels sp1, sp2, and sp3. That is, the multiple blocking portions 123 can prevent light interference between the first sub-pixel sp1 and the second sub-pixel sp2, as well as light interference between the second sub-pixel sp2 and the third sub-pixel sp3.

[0311] Each blocking part 123 may include an absorbing material or a reflective material.

[0312] The absorbent material may include nickel (Ni).

[0313] Absorbent materials may also include UV-curable acrylic resins, polyurethane resins, epoxy resins, etc., containing black pigments or black dyes.

[0314] Reflective materials can include nanoparticle materials.

[0315] Reflective materials may include titanium dioxide (TiO2).

[0316] Reflective materials may also include aluminum (Al) or silver (Ag).

[0317] Absorbent or reflective materials can be applied to the second hole p2 by inkjet printing or coating.

[0318] Figure 10c The illustration shows, according to some embodiments, in Figure 10b The light-emitting device shown.

[0319] Whether to provide a color filter layer 140 can be determined by the following: the type of color conversion material included in the plurality of color conversion sections of the second semiconductor layer 120, the ratio between the amount of color conversion material and the amount of light diffusing agent, the density of color conversion material in each hole, etc.

[0320] If the color conversion rate of the light converted by each color conversion unit 122 is less than or equal to the reference conversion rate, the light-emitting device may also include a color filter layer 140.

[0321] The light-emitting device may include a first semiconductor layer 110, a second semiconductor layer 120, and an active layer 130, and may also include a color filter layer 140. Here, the configuration of the first semiconductor layer 110, the second semiconductor layer 120, and the active layer 130 is similar to... Figure 10a and Figure 10b The configuration is the same, and therefore its description is omitted.

[0322] The color filter layer 140 can be positioned adjacent to the first side of the second semiconductor layer 120.

[0323] The color filter layer 140 may include: a first color filter 141 having a first color, a second color filter 142 having a second color, and a third color filter 143 having a third color.

[0324] Here, the first color filter 141 can be a red color filter, the second color filter 142 can be a green color filter, and the third color filter 143 can be a blue color filter.

[0325] The first color filter 141 can be positioned in the area corresponding to the first color conversion unit m1, the second color filter 142 can be positioned in the area corresponding to the second color conversion unit m2, and the third color filter 143 can be positioned in the area corresponding to the third color conversion unit m3.

[0326] In other words, the first color filter 141 can be set in the area corresponding to the first sub-pixel sp1, the second color filter 142 can be set in the area corresponding to the second sub-pixel sp2, and the third color filter 143 can be set in the area corresponding to the third sub-pixel sp3.

[0327] The first color filter 141, the second color filter 142, and the third color filter 143 can be formed on one side of the first color conversion part m1, the second color conversion part m2, and the third color conversion part m3 by coating method.

[0328] The first color filter 141 can increase the color reproduction rate of light whose color is converted in the first color conversion unit m1, the second color filter 142 can increase the color reproduction rate of light whose color is converted in the second color conversion unit m2, and the third color filter 143 can increase the color reproduction rate of light whose color is converted in the third color conversion unit m3.

[0329] In other words, the first color filter 141 can increase the color reproduction rate of red light, the second color filter 142 can increase the color reproduction rate of green light, and the third color filter 143 can increase the color reproduction rate of blue light.

[0330] Figure 11a The illustration shows, according to some embodiments, in Figure 10c The color filter layer of the light-emitting device shown, and Figure 11b and Figure 11c The illustration shows a color filter layer according to some embodiments.

[0331] like Figure 11a As shown, the first color filter 141, the second color filter 142 and the third color filter 143 can be arranged in a row and spaced apart from each other at regular intervals.

[0332] The first color filter 141 and the second color filter 142 can be spaced apart by a distance corresponding to the width of the first blocking portion, and the second color filter 142 and the third color filter 143 can be spaced apart by a distance corresponding to the width of the second blocking portion 123b.

[0333] like Figure 11b and Figure 11cAs shown, the first color filter 141 and the third color filter 143 can be arranged in a row, and the second color filter 142 can be positioned perpendicular to the first color filter 141 and the third color filter 143 arranged in the row. The size of the second color filter 142 can be greater than or equal to the combined size of the first color filter 141 and the third color filter 143.

[0334] like Figure 11c As shown, the first color conversion unit m1 can be located in the region corresponding to the first color filter 141 among the multiple regions of the second semiconductor layer 120, the second color conversion unit m2 can be located in the region corresponding to the second color filter 142 among the multiple regions of the second semiconductor layer 120, and the third color conversion unit m3 can be located in the region corresponding to the third color filter 143 among the multiple regions of the second semiconductor layer 120.

[0335] The first blocking part 123a can be positioned in the region between the first color conversion part m1 and the third color conversion part m3 among multiple regions of the second semiconductor layer 120.

[0336] The second blocking part 123b can be positioned between the first color conversion part m1 and the second color conversion part m2, and between the third color conversion part m3 and the second color conversion part m2.

[0337] The first color conversion part, the second color conversion part, and the third color conversion part may be disposed in the first hole of the second semiconductor layer, and the first blocking part and the second blocking part may be disposed in the second hole of the second semiconductor layer.

[0338] The first p-type semiconductor 111 of the first semiconductor layer can be positioned in the region corresponding to the first color conversion unit m1, the second p-type semiconductor 112 of the first semiconductor layer can be positioned in the region corresponding to the second color conversion unit m2, and the third p-type semiconductor 113 of the first semiconductor layer can be positioned in the region corresponding to the third color conversion unit m3.

[0339] Figure 12a and Figure 12b The illustration shows a location located in some embodiments. Figure 10b The optical path between the second and third color conversion units of the light-emitting device shown.

[0340] Figure 12a The diagram illustrates the optical path between the second color conversion unit m2 and the third color conversion unit m3, which is the optical path of a light-emitting device including a blocking part 123 containing an absorbing material.

[0341] In the light generated from the active layer 130 and then converted in color in the third color conversion section m3, the light traveling to the second color conversion section m2 can be blocked by the absorbing material of the blocking section 123.

[0342] In other words, the blocking part 123 can block some of the light from the third color conversion part m3 from flowing into the second color conversion part m2. Therefore, crosstalk between the second color conversion part m2 and the third color conversion part m3 can be reduced.

[0343] The blocking portion 123 can divide the active layer 130 into multiple regions, thereby preventing light from traveling from one region of the active layer to another region of the active layer, allowing light generated in one region of the active layer to travel to the color conversion unit connected to that region, and preventing light generated in one region of the active layer to travel to another color conversion unit.

[0344] Figure 12b The diagram illustrates the optical path between the second color conversion unit m2 and the third color conversion unit m3, which is the optical path of a light-emitting device including a blocking part 123 containing reflective material.

[0345] In the light generated from the active layer 130 and then converted in color in the third color conversion unit m3, the light traveling to the second color conversion unit m2 can be reflected by the reflective material of the blocking part 123. That is, the blocking part 123 can reflect some of the light whose color is converted in the third color conversion unit m3, thereby preventing some of the light from the third color conversion unit m3 from flowing into the second color conversion unit m2. Therefore, crosstalk between the second color conversion unit m2 and the third color conversion unit m3 can be reduced.

[0346] The reflective material of the multiple blocking parts 123 provided in the light-emitting device can improve the front illumination of the display device.

[0347] The blocking portion 123 can divide the active layer 130 into multiple regions, thereby preventing light from traveling from one region of the active layer to another region of the active layer, and allowing light traveling in one region of the active layer to travel only in that one region of the active layer by being reflected by the blocking portion 123.

[0348] Furthermore, the blocking portion 123 can allow light generated in one region of the active layer to travel to the color conversion portion connected to that region, and prevent light generated in one region of the active layer from traveling to another color conversion portion.

[0349] Figure 13a , Figure 13b , Figure 13c , Figure 13d and Figure 13e The illustration shows a product manufactured according to some embodiments. Figure 10b The method of the light-emitting device shown.

[0350] First, it can be done through, for example Figure 7a , Figure 7b , Figure 7c and Figure 7d The process shown forms a plurality of first holes p1 in the n-type semiconductor 121 of the second semiconductor layer.

[0351] The pattern formed in the n-type semiconductor 121 can be a pattern corresponding to a plurality of first holes p1.

[0352] like Figure 13a As shown, in the first process, an n-type semiconductor 121 in which a plurality of holes are formed can be coated with a photoresist PR to form a photoresist layer 171 on a first side of the n-type semiconductor 121. A mask can be aligned on the photoresist layer 171, exposure can be performed by irradiation with light, and then development can be performed to form a pattern 172 on the photoresist layer 171.

[0353] The mask can be imprinted with a pattern used to form the second hole.

[0354] Coating methods may include spin coating or slot coating.

[0355] like Figure 13b As shown, the second process involves etching a pattern corresponding to the pattern of the photoresist layer 171 onto the n-type semiconductor 121 and the active layer 130, and then stripping the photoresist layer 171.

[0356] The pattern formed on the n-type semiconductor 121 and the active layer 130 can be a pattern corresponding to a plurality of second holes p2. That is, the second holes can be formed in the n-type semiconductor 121, and the extended holes formed by extending from the second holes in the n-type semiconductor 121 can be formed in the active layer 130.

[0357] Through the first and second processes, a second hole that is longer than the first hole can be formed in the light-emitting device.

[0358] like Figure 13c As shown, the third process is through in Figure 7e , Figure 7f , Figure 7g , Figure 7h , Figure 7i , Figure 7j , Figure 7k , Figure 7l and Figure 7m The coating process shown forms a first color conversion section, a second color conversion section, and a third color conversion section, as well as a first blocking section and a second blocking section in an n-type semiconductor 121.

[0359] Alternatively, it can be done by in Figure 8a , Figure 8b and Figure 8c The inkjet process shown forms a first color conversion section, a second color conversion section, and a third color conversion section, as well as a first blocking section and a second blocking section, in an n-type semiconductor 121. In this case, the inkjet operation time for forming the first color conversion section, the second color conversion section, and the third color conversion section may differ from the inkjet operation time for forming the first blocking section and the second blocking section.

[0360] like Figure 13d As shown, the fourth process is baking the light-emitting device in which the first color conversion part, the second color conversion part, the third color conversion part, the first blocking part, and the second blocking part are formed.

[0361] Through the above process, it is possible to complete the following: Figure 13e The manufacturing of the light-emitting device shown.

[0362] The disclosed embodiments can be implemented in the form of a recording medium storing instructions that can be executed by a computer. The instructions can be stored in the form of program code, and when executed by a processor, the instructions can create a program module to perform the operations of the disclosed embodiments. The recording medium can be implemented as a computer-readable recording medium.

[0363] Computer-readable recording media can include all kinds of recording media that store instructions that can be interpreted by a computer. For example, computer-readable recording media can be read-only memory (ROM), random access memory (RAM), magnetic tape, magnetic disk, flash memory, optical data storage devices, etc.

[0364] While this disclosure has been illustrated and described with reference to one or more embodiments, it should be understood that these embodiments are intended to be illustrative and not restrictive. Those skilled in the art will further understand that various changes in form and detail may be made without departing from the true spirit and full scope of this disclosure, including the appended claims and their equivalents. It will also be understood that any embodiment described herein may be used in conjunction with any other embodiment described herein.

Claims

1. A display device, comprising: Active layer; A first semiconductor layer is positioned on a first side of the active layer; and The second semiconductor layer is positioned on the second side of the active layer. The first semiconductor layer includes: Multiple semiconductor regions, each semiconductor region comprising multiple semiconductors; and Multiple separate regions are located between the multiple semiconductor regions, and The second semiconductor layer includes: A plurality of first holes are disposed in regions of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer; A plurality of second holes are disposed in regions of the second semiconductor layer corresponding to the plurality of separated regions of the first semiconductor layer; Multiple color conversion units, configured to convert light generated from the active layer into light of different colors, each of the multiple color conversion units being positioned within the multiple first holes; and A plurality of blocking portions are configured to prevent interference between the light that has been converted into the different colors, each of the plurality of blocking portions being positioned in the plurality of second holes.

2. The display device according to claim 1, wherein, The plurality of first holes and the plurality of second holes are formed along a direction from the first side of the second semiconductor layer to the second side of the active layer. Wherein, the plurality of first holes and the plurality of second holes have lengths corresponding to the thickness of the second semiconductor layer, and The first side of the second semiconductor layer is the surface from which it emits light.

3. The display device according to claim 1, wherein, The active layer includes extension holes extending from the plurality of second holes. The plurality of first holes are formed along a direction from the first side of the second semiconductor layer to the second side of the active layer, and The plurality of second holes are formed along the direction from the first side of the second semiconductor layer to the first side of the active layer.

4. The display device according to claim 3, wherein, The plurality of first holes have a length corresponding to the thickness of the second semiconductor layer, and The plurality of second holes have a length corresponding to the sum of the thickness of the second semiconductor layer and the thickness of the active layer.

5. The display device according to claim 1, wherein, Each of the plurality of semiconductors includes a p-type semiconductor. Wherein, the second semiconductor layer includes an n-type semiconductor, and The active layer includes multiple quantum wells (MQWs).

6. The display device according to claim 1, further comprising: A color filter layer, comprising a first color filter, a second color filter, and a third color filter, which are respectively positioned adjacent to and arranged in a row with the plurality of color conversion units.

7. The display device according to claim 1, further comprising: A color filter layer, comprising a first color filter, a second color filter, and a third color filter positioned adjacent to the plurality of color conversion units, respectively. The first color filter and the third color filter are arranged in a row, and The second color filter is positioned in a direction perpendicular to the first and third color filters arranged in the row, and the second color filter has a size greater than or equal to the sum of the size of the first and third color filters.

8. The display device according to claim 1, wherein, The plurality of color conversion units include: A first color conversion unit is configured to convert light generated from the active layer into light of a first color. A second color conversion unit is configured to convert light generated from the active layer into light of a second color; and The third color conversion unit is configured to convert the light generated from the active layer into light of a third color. The first color conversion unit and the second color conversion unit include a light diffusing agent and a color conversion material. The third color conversion unit includes a light diffusing agent. The color conversion material includes at least one of quantum dots or phosphors. The plurality of blocking portions includes a first blocking portion and a second blocking portion. The first blocking portion is positioned within the plurality of second holes between the first color conversion portion and the second color conversion portion. The second blocking portion is positioned within the plurality of second holes between the second color conversion portion and the third color conversion portion. The first blocking part and the second blocking part include absorbing material or reflective material.

9. A method for manufacturing a display device, the method comprising: An active layer and a second semiconductor layer are stacked on a first semiconductor layer. The first semiconductor layer includes a plurality of semiconductor regions and a plurality of separation regions. Each semiconductor region includes a plurality of semiconductors, and the plurality of separation regions are positioned between the plurality of semiconductor regions. A plurality of first holes are formed in the region of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer, and a plurality of second holes are formed in the region of the second semiconductor layer corresponding to the plurality of separation regions of the first semiconductor layer; Multiple color conversion sections are formed in the plurality of first holes; as well as Multiple blocking portions are formed in the plurality of second holes.

10. The method according to claim 9, wherein, Forming the plurality of first holes and the plurality of second holes includes: The second semiconductor layer is coated with a photoresist; Align the mask on the photoresist; A pattern is formed on the second semiconductor layer by performing photolithography; and Strip the photoresist. The pattern formed on the second semiconductor layer corresponds to the plurality of first holes and the plurality of second holes.

11. The method according to claim 9, wherein, Forming the plurality of color conversion sections includes forming a first color conversion section, a second color conversion section, and a third color conversion section via a coating method or an inkjet method.

12. The method according to claim 9, wherein, Forming the plurality of blocking portions includes forming a first blocking portion and a second blocking portion via a coating method or an inkjet method.

13. The method of claim 9, further comprising: A color filter layer is formed on a second semiconductor layer in which the plurality of color conversion portions and the plurality of blocking portions are formed by a coating method.

14. The method according to claim 9, wherein, Forming the plurality of first holes and the plurality of second holes includes: The second semiconductor layer is coated with a first photoresist; Align the first mask on the first photoresist; A first pattern is formed on the second semiconductor layer by performing photolithography; Strip the first photoresist; The second semiconductor layer is coated with a second photoresist; Align the second mask on the second photoresist; A second pattern is formed on the second semiconductor layer and the active layer by performing photolithography; and Strip the second photoresist. The first pattern formed on the second semiconductor layer corresponds to the plurality of first holes, and the second pattern formed on the second semiconductor layer and the active layer corresponds to the plurality of second holes.

15. The method according to claim 14, wherein, Forming the plurality of blocking portions includes filling the plurality of second holes located between the plurality of color conversion portions with reflective or absorbing material.

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