Semiconductor process cavity and semiconductor process equipment

Abstract

The invention provides a semiconductor process cavity and semiconductor process equipment, and relates to the technical field of semiconductor preparation, and the semiconductor process cavity comprises a cavity body; the inner lining assembly is arranged in the cavity body, the inner lining assembly and the cavity body are connected through at least two first insulating parts, and the at least two first insulating parts are distributed in the circumferential direction of the cavity body in a scattered mode. The lining assembly and the cavity body are connected through the at least two first insulating parts, and the first insulating parts can realize insulating connection between the lining assembly and the cavity body, so that the lining assembly is at a suspension potential, the lining assembly is gradually electrified when bearing bombardment of plasma, and the potential difference between the lining assembly and a target material is reduced; the sparking probability can be reduced, so that the process quality is ensured; in addition, the at least two first insulating parts which are arranged in a scattered mode can reduce the circumferential occupied space, meanwhile, the using amount of insulating materials is reduced, and the cost can be reduced while the weight is reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor fabrication technology, specifically to a semiconductor process cavity, and also to a semiconductor process equipment. Background Technology

[0002] In the semiconductor industry, physical vapor deposition (PVD) is one of the most representative and widely used processes. The process typically involves applying a voltage to a substrate (also known as a target) and introducing a certain amount of argon gas into a sealed cavity. This causes the gas to form a plasma that bombards the target, resulting in a large number of atoms leaving the target surface and depositing onto the surface of a substrate (such as a silicon wafer or glass).

[0003] Since the movement of target atoms after leaving the target is random, to protect the process chamber from contamination, they are usually blocked by relevant liner components. The plasma gas is confined within the internal space formed by these liner components, allowing target atoms to sputter and deposit on the inner surface of the liner components during the process. However, the liner components are generally electrically connected to the grounded process chamber and are not at a floating potential. The large potential difference between them and the target increases the probability of arcing, thus affecting process quality.

[0004] Furthermore, during the atomic sputtering deposition process, atomic kinetic energy is converted into heat energy, causing the temperature of the liner component to rise (approximately 200°C). After the process, the temperature of the liner component gradually decreases to room temperature, resulting in a large temperature difference and making it more prone to expansion and deformation. Conversely, the temperature of the process chamber is lower during the process and has a smaller temperature difference after the process, making it less prone to expansion and deformation. However, in conventional technologies, the liner component and the process chamber are coupled together, and the difference in their thermal expansion is significant. This makes it easier for interaction forces such as friction to occur between the liner component and the process chamber, causing particle defects and affecting process quality.

[0005] Moreover, for metals such as W (tungsten) and Ta (tantalum), the internal stress of the film layer attached to the surface of the inner liner component is relatively large, and a large temperature difference can cause the film layer to easily fall off, resulting in peeling problems. Summary of the Invention

[0006] The purpose of this application is to provide a semiconductor process cavity and semiconductor process equipment to reduce the probability of arcing and thus ensure process quality.

[0007] On one hand, this application provides a semiconductor process cavity, comprising: Cavity body; A liner assembly is disposed within the cavity body, and the liner assembly is connected to the cavity body via at least two first insulating members, which are distributed circumferentially along the cavity body.

[0008] Optionally, in the above-mentioned semiconductor process cavity, at least two of the first insulating members are provided on one of the cavity body and the inner liner assembly, and the other overlaps on the first insulating member.

[0009] Optionally, in the above-mentioned semiconductor process cavity, one of the cavity body and the inner liner assembly is provided with the first insulating member, and the other is provided with a first guide positioning structure extending radially along the cavity body, wherein the first insulating member and the first guide positioning structure are slidably connected radially along the cavity body.

[0010] Optionally, in the above-mentioned semiconductor process cavity, the first insulating element includes: The first positioning post extends along the axial direction of the cavity body and slides in cooperation with the first guide positioning structure along the radial direction of the cavity body; The first overlapping boss is disposed on the lower side of the first positioning post and at least partially protrudes from the outer peripheral surface of the first positioning post, and the first guide positioning structure overlaps on the first overlapping boss.

[0011] Optionally, the semiconductor process cavity described above further includes a heating component for heating the inner liner assembly, the heating component being disposed on the inner liner assembly; The heating component is connected to the cavity body via a second insulating element.

[0012] Optionally, in the above-mentioned semiconductor process cavity, one of the cavity body and the heating assembly is provided with the second insulating member, and the other is attached to the second insulating member.

[0013] Optionally, in the above-mentioned semiconductor process cavity, there are at least two second insulating members, and the at least two second insulating members are distributed circumferentially along the cavity body; A second guide and positioning structure extending radially along the cavity body is provided on one of the cavity body and the heating assembly that overlaps the second insulating member; The second insulating element includes: The second positioning post extends along the axial direction of the cavity body and slides in cooperation with the second guide positioning structure along the radial direction of the cavity body; The second overlapping boss is disposed on the lower side of the second positioning post and at least partially protrudes from the outer peripheral surface of the second positioning post, and the second guide positioning structure overlaps on the second overlapping boss.

[0014] Optionally, in the above-mentioned semiconductor process cavity, at least two first support portions are provided on the inner sidewall of the cavity body, which are arranged circumferentially along the cavity body, and the first insulating member is provided on each of the first support portions. A support structure is provided on the outer peripheral surface of the lining component, and at least two first guide positioning structures are provided on the support structure along the circumference of the lining component. The first guide positioning structures are provided in a one-to-one correspondence with the first support portion.

[0015] Optionally, in the above-mentioned semiconductor process cavity, the support structure includes: An upper support structure is provided along the circumference of the inner lining assembly, and the upper support structure is provided with at least two first connecting holes and at least two first guide positioning structures arranged along the circumference of the inner lining assembly. The lower support structure is arranged along the circumference of the inner lining assembly. The lower support structure is located below the upper support structure and has a gap with the upper support structure. The lower support structure is provided with at least two second connecting holes arranged along the circumference of the inner lining assembly. The second connecting holes are arranged one-to-one with the first connecting holes. The heating component is located on the lower side of the lower support structure, and at least two third connecting holes are provided on the top surface of the heating component. The third connecting holes are arranged in a one-to-one correspondence with the second connecting holes. The heating component is fixedly connected to the support structure by at least two vacuum screws. The vacuum screws are arranged one-to-one with the first connecting hole. The vacuum screws pass through the first connecting hole and the second connecting hole in sequence and are fixed in the third connecting hole.

[0016] Optionally, in the above-mentioned semiconductor process cavity, at least two second support portions are provided on the inner sidewall of the cavity body, which are arranged circumferentially along the cavity body, and the second insulating members are provided on the second support portions one by one. The heating component has at least two second guide positioning structures arranged circumferentially on its outer peripheral surface, and the second guide positioning structures are arranged one-to-one with the second support portion.

[0017] Optionally, in the semiconductor process cavity described above, the first insulating element and / or the second insulating element can provide thermal insulation.

[0018] Optionally, in the semiconductor process cavity described above, the heating component is embedded with a heating wire, which includes a heating cell, an insulating layer wrapped around the heating cell, and a metal shell wrapped around the insulating layer. The heating wire has a lead-out end connected to a power supply electrode, and the power supply electrode has a flexible wire leading out; the heating wire has a thermocouple electrode connected to it, and the thermocouple electrode has a thermocouple wire leading out. An insulating protective cover and a vacuum electrode are provided on the cavity body. The insulating protective cover covers the flexible wire and the thermocouple wire. One end of the vacuum electrode extends into the insulating protective cover and is electrically connected to both the flexible wire and the thermocouple wire. The other end of the vacuum electrode extends out of the cavity body.

[0019] Optionally, in the above-mentioned semiconductor process cavity, a first electromagnetic device capable of generating a magnetic field within the cavity body is provided on the cavity body. The first electromagnetic device is located on the side of the cavity body near the top of the cavity body, and the magnetic field strength or direction generated by the first electromagnetic device is adjustable. And / or, the cavity body is provided with a second electromagnetic device that can generate a magnetic field within the cavity body. The second electromagnetic device is located on the side of the cavity body near the bottom of the cavity body. The magnetic field strength or direction generated by the second electromagnetic device is adjustable.

[0020] Optionally, in the above-mentioned semiconductor process cavity, the liner assembly includes: An upper shielding cylinder is arranged around the upper inner wall of the cavity body, and the top end of the upper shielding cylinder is connected to the target material placed on the top of the cavity body; The lower shielding cylinder is arranged around the lower inner wall of the cavity body; A deposition ring surrounds the outer periphery of a support device disposed at the bottom of the cavity body, and the deposition ring is connected to the support device; A shielding cap ring is disposed around the deposition ring; The upper shielding cylinder, the lower shielding cylinder, the shielding cover ring, and the deposition ring are connected in sequence to form a process space together with the supporting device.

[0021] On the other hand, this application provides a semiconductor process apparatus, including: Semiconductor process cavity as described in any of the above; A top cover assembly is provided on the top opening of the semiconductor process cavity, and a target material is disposed on the top cover assembly.

[0022] In the semiconductor process cavity provided in this application, the inner wall of the cavity body is blocked by the inner liner assembly. During the process, the plasma gas is confined in the internal space composed of the inner liner assembly, and the target atoms are sputtered and deposited on the inner surface of the inner liner assembly, which can protect the cavity body from contamination.

[0023] Since the liner assembly and the cavity body are connected by at least two first insulating members distributed circumferentially along the cavity body, the at least two first insulating members can achieve an insulating connection between the liner assembly and the cavity body, so that the liner assembly is at a floating potential. In this way, the liner assembly gradually becomes charged when subjected to plasma bombardment, and the potential difference between it and the target material decreases, which can reduce the probability of arcing and thus ensure process quality. In addition, the distributed arrangement of at least two first insulating members can reduce the circumferential space occupied and reduce the amount of insulating material used, which can reduce weight and cost at the same time.

[0024] Furthermore, this application provides a semiconductor process cavity, comprising: Cavity body; A liner assembly is disposed within the cavity body and is slidably connected to the cavity body along the radial direction of the cavity body.

[0025] Optionally, in the above-mentioned semiconductor process cavity, the inner liner assembly and the cavity body are slidably connected radially along the cavity body via a first connector; wherein, the first connector is an insulating component, a heat-insulating component, or an insulating and heat-insulating component.

[0026] Optionally, in the above-mentioned semiconductor process cavity, there are at least two first connectors, which are distributed circumferentially along the cavity body.

[0027] Optionally, in the above-mentioned semiconductor process cavity, at least two of the first connectors are provided on one of the cavity body and the inner liner assembly, and the other overlaps on the first connector.

[0028] Optionally, in the semiconductor process cavity described above, at least two first guide positioning structures extending radially along the cavity body are provided on one of the cavity body and the inner liner assembly that overlaps the first connector, and the first connector and the first guide positioning structure are slidably connected radially along the cavity body in a one-to-one correspondence.

[0029] Optionally, in the above-mentioned semiconductor process cavity, the first connector includes: The first positioning post extends along the axial direction of the cavity body and slides in cooperation with the first guide positioning structure along the radial direction of the cavity body; The first overlapping boss is disposed on the lower side of the first positioning post and at least partially protrudes from the outer peripheral surface of the first positioning post, and the first guide positioning structure overlaps on the first overlapping boss.

[0030] Optionally, the semiconductor process cavity described above further includes a heating component for heating the inner liner assembly, the heating component being disposed on the inner liner assembly; The heating component is connected to the cavity body via a second connector.

[0031] Optionally, in the above-mentioned semiconductor process cavity, one of the cavity body and the heating assembly is provided with the second connector, and the other is attached to the second connector.

[0032] Optionally, in the above-mentioned semiconductor process cavity, there are at least two second connectors, and the at least two second connectors are distributed circumferentially along the cavity body. A second guide and positioning structure extending radially along the cavity body is provided on one of the cavity body and the heating assembly that overlaps the second connector. The second connector includes: The second positioning post extends along the axial direction of the cavity body and slides in cooperation with the second guide positioning structure along the radial direction of the cavity body; The second overlapping boss is disposed on the lower side of the second positioning post and at least partially protrudes from the outer peripheral surface of the second positioning post, and the second guide positioning structure overlaps on the second overlapping boss.

[0033] Optionally, in the above-mentioned semiconductor process cavity, at least two first support portions are provided on the inner sidewall of the cavity body, which are arranged circumferentially along the cavity body, and the first connecting members are provided on the first support portions one by one. A support structure is provided on the outer peripheral surface of the lining component, and at least two first guide positioning structures are provided on the support structure along the circumference of the lining component. The first guide positioning structures are provided in a one-to-one correspondence with the first support portion.

[0034] Optionally, in the above-mentioned semiconductor process cavity, the support structure includes: An upper support structure is provided along the circumference of the inner lining assembly, and the upper support structure is provided with at least two first connecting holes and at least two first guide positioning structures arranged along the circumference of the inner lining assembly. The lower support structure is arranged along the circumference of the inner lining assembly. The lower support structure is located below the upper support structure and has a gap with the upper support structure. The lower support structure is provided with at least two second connecting holes arranged along the circumference of the inner lining assembly. The second connecting holes are arranged one-to-one with the first connecting holes. The heating component is located on the lower side of the lower support structure, and at least two third connecting holes are provided on the top surface of the heating component. The third connecting holes are arranged in a one-to-one correspondence with the second connecting holes. The heating component is fixedly connected to the support structure by at least two vacuum screws. The vacuum screws are arranged one-to-one with the first connecting hole. The vacuum screws pass through the first connecting hole and the second connecting hole in sequence and are fixed in the third connecting hole.

[0035] Optionally, in the above-mentioned semiconductor process cavity, at least two second support portions are provided on the inner sidewall of the cavity body, which are arranged circumferentially along the cavity body, and the second support portions are provided with the second connectors corresponding to each other. The heating component has at least two second guide positioning structures arranged circumferentially on its outer peripheral surface, and the second guide positioning structures are arranged one-to-one with the second support portion.

[0036] In another aspect, this application provides a semiconductor process cavity, comprising: Cavity body; A liner assembly is disposed within the cavity body, and the liner assembly is connected to the cavity body via at least two first heat insulation members, which are distributed circumferentially along the cavity body.

[0037] Optionally, in the above-mentioned semiconductor process cavity, at least two of the first heat insulation members are provided on one of the cavity body and the inner liner assembly, and the other overlaps on the first heat insulation member.

[0038] Optionally, in the above-mentioned semiconductor process cavity, one of the cavity body and the inner liner assembly is provided with the first heat insulation member, and the other is provided with a first guide positioning structure extending radially along the cavity body, wherein the first heat insulation member and the first guide positioning structure are slidably connected radially along the cavity body.

[0039] Optionally, in the aforementioned semiconductor process cavity, the first heat insulation element includes: The first positioning post extends along the axial direction of the cavity body and slides in cooperation with the first guide positioning structure along the radial direction of the cavity body; The first overlapping boss is disposed on the lower side of the first positioning post and at least partially protrudes from the outer peripheral surface of the first positioning post, and the first guide positioning structure overlaps on the first overlapping boss.

[0040] Optionally, the semiconductor process cavity described above further includes a heating component for heating the inner liner assembly, the heating component being disposed on the inner liner assembly; The heating component is connected to the cavity body via a second heat insulation component.

[0041] Optionally, in the above-mentioned semiconductor process cavity, one of the cavity body and the heating assembly is provided with the second heat insulation member, and the other overlaps on the second heat insulation member.

[0042] Optionally, in the above-mentioned semiconductor process cavity, there are at least two second heat insulation components, and the at least two second heat insulation components are distributed circumferentially along the cavity body. A second guide and positioning structure extending radially along the cavity body is provided on one of the cavity body and the heating assembly that overlaps the second heat insulation member; The second heat insulation element includes: The second positioning post extends along the axial direction of the cavity body and slides in cooperation with the second guide positioning structure along the radial direction of the cavity body; The second overlapping boss is disposed on the lower side of the second positioning post and at least partially protrudes from the outer peripheral surface of the second positioning post, and the second guide positioning structure overlaps on the second overlapping boss.

[0043] Optionally, in the semiconductor process cavity described above, the first heat insulation element and / or the second heat insulation element can be insulated.

[0044] Optionally, in the above-mentioned semiconductor process cavity, at least two first support portions are provided on the inner sidewall of the cavity body, which are arranged circumferentially along the cavity body, and the first heat insulation member is provided on each of the first support portions. A support structure is provided on the outer peripheral surface of the lining component, and at least two first guide positioning structures are provided on the support structure along the circumference of the lining component. The first guide positioning structures are provided in a one-to-one correspondence with the first support portion.

[0045] Optionally, in the above-mentioned semiconductor process cavity, the support structure includes: An upper support structure is provided along the circumference of the inner lining assembly, and the upper support structure is provided with at least two first connecting holes and at least two first guide positioning structures arranged along the circumference of the inner lining assembly. The lower support structure is arranged along the circumference of the inner lining assembly. The lower support structure is located below the upper support structure and has a gap with the upper support structure. The lower support structure is provided with at least two second connecting holes arranged along the circumference of the inner lining assembly. The second connecting holes are arranged one-to-one with the first connecting holes. The heating component is located on the lower side of the lower support structure, and at least two third connecting holes are provided on the top surface of the heating component. The third connecting holes are arranged in a one-to-one correspondence with the second connecting holes. The heating component is fixedly connected to the support structure by at least two vacuum screws. The vacuum screws are arranged one-to-one with the first connecting hole. The vacuum screws pass through the first connecting hole and the second connecting hole in sequence and are fixed in the third connecting hole.

[0046] Optionally, in the above-mentioned semiconductor process cavity, at least two second support portions are provided on the inner sidewall of the cavity body, arranged circumferentially along the cavity body, and the second heat insulation member is provided on each of the second support portions. The heating component has at least two second guide positioning structures arranged circumferentially on its outer peripheral surface, and the second guide positioning structures are arranged one-to-one with the second support portion. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be introduced below. The accompanying drawings described below are merely embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0048] Figure 1 The diagram shows a cross-sectional view of a semiconductor process cavity provided in some embodiments of this application.

[0049] Figure 2 A schematic diagram of the structure of the upper shielding cylinder provided in some embodiments of this application is shown.

[0050] Figure 3 This paper illustrates a schematic diagram of the connection structure between the heating assembly and the upper shielding cylinder of a semiconductor process cavity provided in some embodiments of this application.

[0051] Figure 4 This paper shows a schematic diagram of the connection structure between the upper cavity and the upper shielding cylinder of a semiconductor process cavity provided in some embodiments of this application.

[0052] Figure 5 A schematic diagram of the structure of a first insulating element provided in some embodiments of this application is shown.

[0053] Figure 6 A schematic diagram of the structure of a heating assembly provided in some embodiments of this application is shown.

[0054] Figure 7 A schematic diagram of the upper cavity provided in some embodiments of this application is shown.

[0055] Figure 8 A top view of the connection structure between the upper cavity and the heating assembly provided in some embodiments of this application is shown.

[0056] Figure 9 The diagram shows a cross-sectional view of the connection structure between the upper cavity and the upper-middle cavity and the heating assembly provided in some embodiments of this application.

[0057] Figure 10 A cross-sectional view of the connection structure between the upper cavity and the heating assembly provided in some embodiments of this application is shown.

[0058] in, Figures 1-10 middle: 1-Upper cavity; 101-First support; 2-Ceramic ring; 3-Target material; 4-Upper shielding cylinder; 401-First connecting hole; 402-First guide and positioning structure; 403-Avoiding slot; 404-Upper support structure; 405-Lower support structure; 5-Vacuum screw; 6-Heating assembly; 601-Second guide and positioning structure; 602-Heating wire; 603-Flexible wire; 604-Thermocouple electrode; 605-Thermocouple wire; 606-Supply... Electrode; 7-Lower middle cavity; 8-Lower shielding cylinder; 9-Lower cavity; 10-Suction cup; 11-Deposition ring; 12-Shielding cover ring; 13-Second electromagnetic device; 14-First electromagnetic device; 15-Vacuum electrode; 16-Upper middle cavity; 1601-Second support part; 17-First insulating component; 1701-First positioning post; 1702-First overlapping boss; 1703-Connecting post; 18-Insulating protective cover; 19-Second insulating component. Detailed Implementation

[0059] The embodiments of this application will be described below. It should be noted that, in order to provide a concise description of these embodiments, this specification cannot provide a detailed description of all features of the actual embodiments. It should be understood that, in the actual implementation of any embodiment, changes may occur from one embodiment to another to achieve specific objectives. Furthermore, it is also understood that, although the efforts made in this development process may be complex and lengthy, for those skilled in the art related to the content of this application, some design, manufacturing, or production modifications based on the technical content disclosed in this application are merely conventional technical means and should not be construed as insufficient content of this application.

[0060] This application provides a semiconductor process apparatus, including a semiconductor process cavity; a top cover assembly that covers the top opening of the semiconductor process cavity, and a target material 3 is disposed on the top cover assembly.

[0061] Semiconductor process cavities typically contain a support device to support the substrate; the top cover assembly is located above the support device and is positioned opposite to it.

[0062] For example, semiconductor process equipment can be physical vapor deposition (PVD) equipment. In a vacuum environment, PVD equipment transforms the surface of the target material 3 (i.e., the coating material) from a condensed phase to a vapor phase through methods such as evaporation deposition, sputtering deposition, or electron beam evaporation, and then deposits a thin film on the surface of a substrate such as a wafer.

[0063] Semiconductor process equipment can also be equipment for performing other processes on semiconductors, such as plasma etching equipment (e.g., CCP (Capacitively Coupled Plasma) etching equipment).

[0064] like Figures 1-10 As shown, in some embodiments, the semiconductor process cavity includes a cavity body and an inner liner assembly disposed within the cavity body. The inner liner assembly and the cavity body are connected by at least two first insulating members 17, which are distributed circumferentially along the cavity body. The first insulating members 17 are made of an insulator, which can achieve insulation and non-conductivity.

[0065] In the semiconductor process cavity provided in this application embodiment, the inner wall of the cavity body is blocked by the inner liner assembly. During the process, the plasma gas is confined in the internal space composed of the inner liner assembly, and the target material 3 atoms are sputtered and deposited on the inner surface of the inner liner assembly, which can protect the cavity body from contamination.

[0066] Since the inner liner assembly and the cavity body are connected by at least two first insulating members 17 arranged circumferentially along the cavity body, the at least two first insulating members 17 can achieve an insulating connection between the inner liner assembly and the cavity body, so that the inner liner assembly is at a floating potential. In this way, the inner liner assembly gradually becomes charged when subjected to plasma bombardment, and the potential difference between it and the target material 3 is reduced, which can reduce the probability of arcing and thus ensure process quality. In addition, the at least two first insulating members 17 arranged circumferentially can reduce the circumferential space occupied and reduce the amount of insulating material used, which can reduce weight and cost at the same time.

[0067] like Figure 4 As shown, in this embodiment, the insulating connection between the inner liner assembly and the cavity body can be achieved through the first insulating element 17. During the process, the voltage applied to the target material 3 is approximately several hundred volts. Simultaneously, the distance between the top of the inner liner assembly and the target material 3 is relatively close. During processes with high ionization rates such as W and Ta, the large potential difference makes arcing prone to occur. Increasing the distance between the top of the inner liner assembly and the target material 3 poses a risk of glow leakage. The first insulating element 17 can achieve a floating potential for the inner liner assembly, reducing the probability of arcing and thus ensuring process quality. Specifically, the upper shielding cylinder 4 of the inner liner assembly can be kept at a floating potential. As the upper shielding cylinder 4 is bombarded by plasma, it gradually becomes charged, reducing the potential difference between it and the target material 3, thereby lowering the risk of arcing.

[0068] In some embodiments, the cavity body includes an upper cavity 1, a middle-upper cavity 16, a middle-lower cavity 7, and a lower cavity 9, which are sequentially and sealed from top to bottom. The lower cavity 9 can be connected to a closed bottom shell to achieve bottom sealing. The cavity body adopts a split structure, which facilitates assembly and processing. Figure 1 As shown, a ceramic ring 2 is provided on the top of the upper cavity 1, and the top of the ceramic ring 2 contacts the target material 3. The target material 3, ceramic ring 2, upper cavity 1, upper middle cavity 16, lower middle cavity 7, and lower cavity 9 are all sealed by sealing rings. During the process, the cavity body and the upper cover assembly can form a sealed space to maintain a vacuum environment, providing a basic environment for the PVD process.

[0069] In some embodiments, the liner assembly includes an upper shielding cylinder 4, which surrounds the upper inner wall of the cavity body, and the top end of the upper shielding cylinder 4 is connected to the target material 3 placed on the top of the cavity body; a lower shielding cylinder 8, which surrounds the lower inner wall of the cavity body; a deposition ring 11, which surrounds the outer periphery of the support device at the bottom of the cavity body, and the deposition ring 11 is connected to the support device; and a shielding cover ring 12, which surrounds the deposition ring 11. The upper shielding cylinder 4, lower shielding cylinder 8, shielding cover ring 12, and deposition ring 11 are sequentially connected to form a process space together with the support device. The upper inner wall of the cavity body is the inner wall of the cavity body near the target material 3, specifically including the inner walls of the upper cavity 1 and the upper-middle cavity 16; the lower inner wall of the cavity body is the inner wall of the cavity body away from the target material 3, specifically including the inner walls of the lower-middle cavity 7 and the lower cavity 9. Figure 1 As shown, the inner lining assembly can work together with the upper shielding cylinder 4, the lower shielding cylinder 8, the shielding cover ring 12, and the deposition ring 11 to block the cavity body and protect the cavity body from contamination.

[0070] The carrier device can also be equipped with a suction cup 10. The space formed by the suction cup 10 and the inner liner assembly is used to confine the plasma gas. The sputtered particles will adhere to these inner liner assemblies, thereby preventing the inner wall of the cavity body from being contaminated. The suction cup 10 can be replaced with a product substrate.

[0071] The upper cavity 1 and the upper shielding cylinder 4 are usually made of Al (aluminum). During the process, the temperature difference between the two is large, and the upper shielding cylinder 4 will expand and slide along the radial direction of the upper cavity 1.

[0072] In some embodiments, at least two first insulating members 17 are provided on one of the cavity body and the liner assembly, and the other overlaps on the first insulating member 17. For example, at least two first insulating members 17 may be provided on the cavity body, and the liner assembly may overlap on the first insulating member 17; alternatively, at least two first insulating members 17 may be provided on the liner assembly, and the cavity body may overlap on the first insulating member 17. As another example, the first insulating member 17 may include a first positioning post 1701 extending axially along the cavity body, and the cavity body or the liner assembly may overlap on the first positioning post 1701.

[0073] In this embodiment, the first insulating member 17 is disposed on one of the cavity body and the inner liner assembly, and the other of the cavity body and the inner liner assembly are overlapped on the first insulating member 17; thus, an insulating connection is achieved between the inner liner assembly and the cavity body. Moreover, after the two are connected, the inner liner assembly is in a suspended state in the horizontal direction relative to the cavity body, that is, in a movable state. When the inner liner assembly is thermally expanded due to temperature difference, the inner liner assembly can slide relative to the cavity body in the radial direction of the cavity body, which can prevent the interaction force between the inner liner assembly and the cavity body. Therefore, it can prevent the interaction force between the inner liner assembly and the process cavity from causing particulate defects, thereby ensuring process quality.

[0074] In some embodiments, at least two first guide positioning structures 402 extending radially along the cavity body are provided on one of the cavity body and the inner liner assembly that overlaps the first insulating member 17. The first insulating member 17 and the first guide positioning structure 402 are slidably connected radially along the cavity body in a one-to-one correspondence. For example, the cavity body may be provided with the first insulating member 17, and the inner liner assembly may be provided with a first guide positioning groove as the first guide positioning structure 402; alternatively, the inner liner assembly may be provided with the first insulating member 17, and the cavity body may be provided with a first guide positioning groove as the first guide positioning structure 402. It is understood that a first guide slide rail may also be used as the first guide positioning structure 402.

[0075] In this embodiment, the first insulating member 17 and the first guiding and positioning structure 402 are slidably connected along the radial direction of the cavity body, so that the inner liner assembly is slidably connected to the cavity body along the radial direction of the cavity body. In this way, the inner liner assembly is in a suspended state after being connected to the cavity body. When the inner liner assembly undergoes thermal expansion due to temperature difference, the inner liner assembly can slide relative to the cavity body along the radial direction of the cavity body under the guidance of the first guiding and positioning structure 402. This can prevent the interaction force between the inner liner assembly and the cavity body, thus preventing particle defects caused by the interaction force between the inner liner assembly and the process cavity, thereby ensuring process quality.

[0076] In some embodiments, the first insulating member 17 includes: a first positioning post 1701, extending axially along the cavity body and slidingly engaging with the first guide positioning structure 402 radially along the cavity body; and a first overlapping boss 1702, disposed below the first positioning post 1701 and at least partially protruding from the outer peripheral surface of the first positioning post 1701, with the first guide positioning structure 402 overlapping the first overlapping boss 1702. For example, when the first guide positioning structure 402 employs a first guide positioning groove, the sidewalls of the first guide positioning groove, i.e., its two sidewalls extending radially along the cavity body, overlap the first overlapping boss 1702.

[0077] like Figure 4 As shown, a first insulating member 17 is provided on the upper cavity 1 of the cavity body, and an upper support structure 404 is provided on the inner liner assembly. The upper support structure 404 has a first guide positioning groove as a first guide positioning structure 402. The first insulating member 17 can be fixed on the fixing boss on the inner wall of the cavity body by screws. The first positioning post 1701 of the first insulating member 17 is slidably disposed in the first guide positioning structure 402. The first overlapping boss 1702 of the first insulating member 17 is supported on the lower side of the upper support structure 404, so that the fixing boss is slidably connected to the first guide positioning structure 402 through the first insulating member 17 and supports the upper support structure 404. In the radial direction, there is a certain gap between the groove surfaces of the first positioning post 1701 and the first guide positioning structure 402 opposite to their groove openings, which is used to compensate for the radial expansion of the inner liner assembly, specifically the upper shielding cylinder 4.

[0078] The first insulating component 17 can be processed separately before assembly, which reduces the processing difficulty.

[0079] like Figure 5 As shown, optionally, the first positioning post 1701 is cylindrical; the first overlapping boss 1702 is an oblong column with its length direction perpendicular to the radial direction of the upper cavity 1, thereby forming two overlapping bosses on both sides; a connecting post 1703 is also provided on the lower side of the first overlapping boss 1702. The connecting post 1703 is preferably a connecting cylinder with a diameter smaller than that of the first positioning post 1701. The bottom of the connecting cylinder and the first overlapping boss 1702 are limited in the limiting groove of the fixed boss, and the first insulating member 17 is fixed on the fixed boss by screws.

[0080] The first insulating component 17 has boss structures on both sides of the first overlapping boss 1702; the upper support structure 404 of the upper shielding cylinder 4 overlaps on the first overlapping boss 1702, so that the upper shielding cylinder 4 does not directly contact the fixed boss of the upper cavity 1, so that the upper shielding cylinder 4 is in a floating potential during the process.

[0081] In other embodiments, the first insulating member 17 may include a first positioning post 1701; but does not include a first overlapping boss 1702; and the first guide positioning structure 402 overlaps the first positioning post 1701.

[0082] In some embodiments, the semiconductor process cavity further includes a heating assembly 6 for heating the inner liner assembly, the heating assembly 6 being disposed on the inner liner assembly; wherein the heating assembly 6 is connected to the cavity body via a second insulating member 19. Figure 3 As shown, the heating component 6 can be used to heat and control the temperature of the inner liner component. Since the upper shielding cylinder 4 of the inner liner component is closest to the target material 3, it is most affected by heat. Specifically, the heating component 6 is used to heat the upper shielding cylinder 4 after the process to ensure that the temperature difference of the inner liner component before and after the process is maintained within a controllable range, thereby improving the peeling problem.

[0083] Because the heating component 6 is mounted on the inner liner component and coupled together, the temperature of the heater and process components is high during the process, while the temperature of the cavity body is low, resulting in a significant difference in thermal expansion. To avoid friction with the cavity body that could generate particles, the heating component 6 is in a floating state after coupling with the inner liner component and is not rigidly connected to the cavity body. The heating component 6 can slide radially relative to the cavity body along with the inner liner component, which can effectively prevent the problem of particles generated by friction due to radial movement caused by thermal expansion.

[0084] In addition, such as Figure 10 As shown, the heating component 6 is connected to the cavity body through the second insulating member 19. The second insulating member 19 can achieve an insulated connection between the heating component 6 and the cavity body, which can prevent the cavity body from conducting electricity to the inner liner component through the heating component 6, ensuring that the inner liner component is at a floating potential. At the same time, the cavity body can be used to provide auxiliary support for the heating component 6, thereby improving the overall stability of the heating component 6 and the inner liner component.

[0085] like Figure 3 , Figure 4 and Figure 10 As shown, there is a certain radial gap between the heating component 6 and the cavity body (specifically the upper cavity 1 and the upper middle cavity 16), which is >3mm. This ensures that the heat exchange between the two in a vacuum environment is only thermal radiation, which is less efficient and can effectively prevent the upper cavity 1 and the upper middle cavity 16 from heating up.

[0086] In some embodiments, a second insulating member 19 is provided on one of the cavity body and the heating assembly 6, and the other overlaps on the second insulating member 19. For example, the second insulating member 19 can be provided on the cavity body, and the heating assembly 6 overlaps on the second insulating member 19; alternatively, the second insulating member 19 can be provided on the heating assembly 6, and the cavity body overlaps on the second insulating member 19. As another example, the second insulating member 19 may include a second positioning post extending axially along the cavity body, and either the cavity body or the heating assembly 6 overlaps on the second positioning post.

[0087] In this embodiment, the second insulating member 19 is disposed on one of the cavity body and the heating component 6, and the other of the cavity body and the heating component 6 is overlapped on the second insulating member 19; thus, an insulating connection is achieved between the heating component 6 and the cavity body. Moreover, after the two are connected, the heating component 6 is in a suspended state in the horizontal direction relative to the cavity body, that is, in a movable state. When the inner lining component is thermally expanded due to the temperature difference, the heating component 6 can slide along the radial direction of the cavity body with the inner lining component relative to the cavity body, which can prevent the interaction force between the heating component 6 and the cavity body. Therefore, it can prevent the interaction force between the heating component 6 and the process cavity from causing particulate defects, thereby ensuring the process quality.

[0088] In some embodiments, there are at least two second insulating members 19, which are distributed circumferentially along the cavity body. The distributed arrangement of at least two second insulating members 19 can reduce the circumferential space occupied and reduce the amount of insulating material used, thereby reducing weight and cost.

[0089] A second guide positioning structure 601 extending radially along the cavity body is provided on one of the cavity body and the heating assembly 6 that overlaps the second insulating member 19. For example, the cavity body can have the second insulating member 19 and the heating assembly 6 can have the second guide positioning groove as the second guide positioning structure 601; or the heating assembly 6 can have the second insulating member 19 and the cavity body can have the second guide positioning groove as the second guide positioning structure 601. It is understood that a second guide slide rail can also be used as the second guide positioning structure 601. In this embodiment, the second insulating member 19 and the second guide positioning structure 601 are slidably connected radially along the cavity body, so that the heating assembly 6 is slidably connected to the cavity body radially. In this way, the heating assembly 6 is in a suspended state after being connected to the cavity body. When the inner lining assembly is thermally expanded due to temperature difference, the heating assembly 6 can slide radially along the cavity body relative to the cavity body under the guidance of the second guide positioning structure 601, which can improve the stability of the expansion movement of the assembly formed by the heating assembly 6 and the inner lining assembly.

[0090] In some embodiments, the second insulating member 19 includes a second positioning post extending axially along the cavity body and slidingly engaging with the second guide positioning structure 601 radially along the cavity body; and a second overlapping boss disposed below the second positioning post and at least partially protruding from the outer peripheral surface of the second positioning post, the second guide positioning structure 601 overlapping the second overlapping boss. For example, when the second guide positioning structure 601 employs a second guide positioning groove, the sidewalls of the second guide positioning groove, i.e., its two sidewalls extending radially along the cavity body, overlap the second overlapping boss.

[0091] like Figure 10 As shown, the second insulating member 19 can be fixed to the support groove of the upper cavity 16 with screws. The second positioning post of the second insulating member 19 is slidably set in the second guide positioning groove as the second guide positioning structure 601. The second overlapping boss of the second insulating member 19 is supported on the lower side of the sidewalls on both sides of the opening of the second guide positioning structure 601, so that the heating component 6 is slidably connected to the second insulating member 19 through the second guide positioning structure 601. The heating component 6 and the second insulating member 19 are in contact by gravity, without a rigid connection. In the radial direction, there is a certain gap between the second positioning post of the second insulating member 19 and the groove surface of the second guide positioning structure 601 opposite to its opening, which is used to compensate for the radial expansion of the heating component 6 with the upper shielding cylinder 4. The second insulating member 19 can be processed separately and then assembled, which reduces the processing difficulty.

[0092] The difference between the second insulating member 19 and the first insulating member 17 is that the first insulating member 17 is disposed on the first support portion 101 and is used to connect with the first guide positioning structure 402; the second insulating member 19 is disposed on the second support portion 1601 and is used to connect with the second guide positioning structure 601. The structures of the two are the same, and the structure of the second insulating member 19 will not be described in detail here.

[0093] In other embodiments, the second insulating member 19 may include a second positioning post; but does not include a second overlapping boss; such that the second guide positioning structure 601 overlaps the second positioning post.

[0094] In some embodiments, at least two first support portions 101 arranged circumferentially along the inner wall of the cavity body are provided, and a first insulating member 17 is provided on each of the first support portions 101. A support structure is provided on the outer peripheral surface of the liner assembly, and at least two first guide positioning structures 402 arranged circumferentially along the liner assembly are provided on the support structure, with each first guide positioning structure 402 corresponding to one of the first support portions 101. Specifically, the upper support structure 404 of the support structure is provided with at least two first guide positioning structures 402.

[0095] When the temperature is high during the process, the upper shielding cylinder 4 will expand radially along the cavity body. Therefore, the first guide positioning structure 402 is preferably an elongated opening groove that extends radially along the cavity body and faces the opening of the cavity body, that is, it extends to the outer peripheral surface of the upper support structure 404. In the radial direction of the cavity body, there is a certain gap between the groove surface of the first guide positioning structure 402 opposite to its opening and the part of the first insulating member 17 provided on the fixed boss located in the first guide positioning structure 402, which is used to compensate for the radial expansion of the upper shielding cylinder 4.

[0096] like Figure 4 As shown, at least two fixed protrusions are provided on the inner wall of the cavity body as the first support part 101; in order to simplify the structure while achieving the support effect, three fixed protrusions are evenly distributed circumferentially on the inner wall of the upper cavity 1 to support the upper shielding cylinder 4. The upper support structure 404 of the upper shielding cylinder 4 has three first guide positioning structures 402 evenly distributed circumferentially. The first guide positioning structures 402 are slidably connected to the fixed protrusions one by one. The first connecting holes 401 and the first guide positioning structures 402 are evenly distributed circumferentially along the upper support structure 404.

[0097] In other embodiments, the first support portion 101 may also be a support groove, and the corresponding first guide positioning structure 402 may be replaced by a positioning post, so that the positioning post can slide radially in the support groove.

[0098] In some embodiments, the heating assembly 6 is fixedly connected to the support structure by at least two vacuum screws 5. For example... Figure 3 As shown, the heating component 6 and the support structure of the upper shielding cylinder 4 are rigidly connected by vacuum screws 5, which facilitates disassembly and assembly, and the connection strength is good. In addition, the vacuum screws 5 have good heat conduction effect, which can improve the heating efficiency of the heating component 6 to the upper shielding cylinder 4 and avoid the problem of film peeling off the upper shielding cylinder 4.

[0099] Specifically, the assembly formed by the heating component 6, vacuum screw 5, and upper shielding cylinder 4 is connected to the first overlapping boss 1702 by the upper support structure 404, which facilitates the assembly of the heating component 6 and the inner liner component.

[0100] In addition, such as Figure 10As shown, due to the presence of the second guide positioning structure 601, the heating component 6 can move vertically upwards, facilitating the assembly of the heating component 6 with the upper shielding cylinder 4. Initially, there is a certain axial gap between the heating component 6 and the upper shielding cylinder 4, typically 1-2 mm. As the vacuum screw 5 is gradually tightened, the heating component 6 gradually rises vertically along the second insulating member 19, and the aforementioned axial gap gradually decreases until it contacts the lower edge of the upper shielding cylinder 4, thereby achieving heating of the upper shielding cylinder 4. At the same time, a certain radial gap (>3 mm) is maintained between the heating component 6 and the cavity body (specifically the upper cavity 1 and the upper middle cavity 16), ensuring that there is no physical contact or electrical connection between the two.

[0101] In some embodiments, the support structure includes an upper support structure 404 arranged circumferentially along the inner liner assembly, the upper support structure 404 having at least two first connecting holes 401 and at least two first guide positioning structures 402 arranged circumferentially along the inner liner assembly; and a lower support structure 405 arranged circumferentially along the inner liner assembly, the lower support structure 405 being located below the upper support structure 404 and having a gap between it and the upper support structure 404, the lower support structure 405 having at least two second connecting holes arranged circumferentially along the inner liner assembly, the second connecting holes being arranged one-to-one with the first connecting holes 401. The heating component 6 is located on the lower side of the lower support structure 405. At least two third connection holes are provided on the top surface of the heating component 6. The third connection holes are arranged in a one-to-one correspondence with the second connection holes. The vacuum screw 5 is arranged in a one-to-one correspondence with the first connection hole 401. The vacuum screw 5 passes through the first connection hole 401 and the second connection hole in sequence and is fixed in the third connection hole.

[0102] like Figures 2-3 As shown, the upper shielding cylinder 4 has two supporting structures: an upper supporting structure 404 and a lower supporting structure 405. Both can be supporting protrusions on the outer circumference of the inner liner assembly, or supporting components installed on the outer circumference of the inner liner assembly. The supporting structures can be annular, arc-shaped, or multi-segmented; to improve support strength, an annular shape is preferred. Furthermore, by installing vacuum screws 5 using the spaced upper supporting structure 404 and lower supporting structure 405, the support area of ​​the upper shielding cylinder 4 can be distributed, improving the support strength of the upper shielding cylinder 4 for the heating assembly 6, while also saving material and reducing weight. It is understood that the supporting structure can also be a single layer or other number of layers, which can be adapted to the actual application scenario.

[0103] The upper support structure 404 has at least two first connecting holes 401 evenly distributed on it, and the lower support structure 405 has at least two second connecting holes evenly distributed on it, the number of which is the same as the number of first connecting holes 401. Both the first connecting holes 401 and the second connecting holes are threaded holes, while the second connecting holes are through holes. Vacuum screws 5 pass through the upper support structure 404 and the lower support structure 405 and connect to the heating component 6. Under the clamping force of the screws, the bottom surface of the lower support structure 405 is in close contact with the upper surface of the heating component 6. The close contact between the bottom surface and the upper surface in the vacuum environment, along with the presence of at least two vacuum screws 5, effectively facilitates heat conduction, enabling the heating component 6 to rapidly heat the upper shielding cylinder 4.

[0104] In the above embodiment, the upper support structure 404 is provided with at least two first guide positioning structures 402 arranged circumferentially along the inner lining component; the lower support structure 405 may also be provided with at least two clearance slots 403 arranged circumferentially along the inner lining component, the clearance slots 403 and the first guide positioning structures 402 are arranged in a one-to-one correspondence; wherein, at least a portion of the first support part 101 is located in the clearance slot 403.

[0105] like Figure 4 As shown, the lower support structure 405 of the upper shielding cylinder 4 has three clearance slots 403 evenly distributed in the circumferential direction to avoid the fixing boss; the clearance slots 403 are preferably arc-shaped slots, which can avoid scratching the upper cavity 1 while avoiding the boss.

[0106] In this way, the upper support structure 404 is used both to fix the heating component 6 and to slide radially with the upper cavity 1, which simplifies the structure.

[0107] In some embodiments, at least two second support portions 1601 are provided on the inner sidewall of the cavity body and arranged circumferentially along the cavity body. Second insulating members 19 are provided on the second support portions 1601 in a corresponding manner. At least two second guide positioning structures 601 are provided on the outer peripheral surface of the heating assembly 6 and arranged circumferentially thereon. The second guide positioning structures 601 are provided in a corresponding manner with the second support portions 1601.

[0108] like Figure 7 and Figure 10As shown, the inner wall of the cavity body has support grooves, which serve as the second support part 1601. To achieve the support effect while simplifying the structure, three support grooves are evenly distributed circumferentially on the inner wall of the upper cavity 16 to support the heating component 6. The heating component 6 has three second guide positioning structures 601 evenly distributed circumferentially; the second guide positioning structures 601 are slidably connected to the support grooves one by one. The second guide positioning structure 601 is an elongated opening groove that extends radially along the cavity body and faces the opening of the cavity body, that is, it extends to the outside of the heating component 6; radially, there is a certain gap between the groove surface of the second guide positioning structure 601 opposite to its opening and the part of the second insulating member 19 provided on the support groove located inside the second guide positioning structure 601, which is used to compensate for the radial expansion of the heating component 6 with the upper shielding cylinder 4.

[0109] In this way, the upper cavity 1 can use the first support part 101 to suspend and support the upper shielding cylinder 4, and the middle upper cavity 16 can use the second support part 1601 to suspend and support the heating component 6. The support stability of the assembly formed by the heating component 6 and the upper shielding cylinder 4 is better, and the stability of the expansion and movement of the assembly is improved.

[0110] In some embodiments, the first insulating member 17 and / or the second insulating member 19 can provide thermal insulation. For example, both the first insulating member 17 and the second insulating member 19 are thermal insulation members with low thermal conductivity. The first insulating member 17 can be used to achieve a thermally insulated connection between the inner liner assembly and the cavity body, and the second insulating member 19 can be used to achieve a thermally insulated connection between the heating assembly 6 and the cavity body. During the process, due to the presence of the water-cooling channel in the cavity body, such as the upper cavity 1, the cavity body is at room temperature, while the inner liner assembly, especially the upper shielding cylinder 4, is at a high temperature (approximately 300°C). The temperature difference between the two is large, and the internal stress of the film layer on the surface of the inner liner assembly is large. The large temperature difference can cause the film layer to easily detach, resulting in peeling problems. Using thermal insulation members can reduce the heat conduction between the inner liner assembly and the heating assembly and the cavity body, avoiding affecting the temperature difference of the inner liner assembly.

[0111] The first insulating component 17 and the second insulating component 19 can be made of materials with low thermal conductivity, preferably ceramic. Ceramic is also an insulator, serving as an insulating and heat-insulating component, thus meeting both insulation and heat insulation requirements. Specifically, during the process, the inner lining component, specifically the upper shielding cylinder 4, is at a floating potential and is heat-insulated from the cavity body. Specifically, this achieves insulation and heat insulation between the upper shielding cylinder 4 and the upper cavity 1, and between the heating component 6 and the upper middle cavity 16.

[0112] In some embodiments, the heating assembly 6 is embedded with a heating wire 602, which includes a heating core, an insulating layer wrapped around the heating core, and a metal shell wrapped around the insulating layer. A power supply electrode 606 is connected to the lead-out end of the heating wire 602, and a flexible wire 603 is led out from the power supply electrode 606. A thermocouple electrode 604 is connected to the heating wire 602, and a thermocouple wire 605 is led out from the thermocouple electrode 604. An insulating protective cover 18 and a vacuum electrode 15 are provided on the cavity body. The insulating protective cover 18 covers the flexible wire 603 and the thermocouple wire 605. One end of the vacuum electrode 15 extends into the insulating protective cover 18 and is electrically connected to both the flexible wire 603 and the thermocouple wire 605. The other end of the vacuum electrode 15 extends out of the cavity body.

[0113] like Figure 6 As shown, the heating of the heating component 6 can be achieved by the armored heating wire 602. The heating wire 602 is embedded in the heating component 6 and is usually composed of a metal shell, a magnesium oxide insulation layer and an internal heating element.

[0114] The power supply electrode 606 can be an AC (alternating current) ceramic electrode, which can achieve the sealing of the heating wire 602 in a vacuum environment and the insulation between the heating element and the metal shell, and can quickly heat the upper shielding cylinder 4. The rear end of the AC ceramic electrode is connected to a flexible wire 603. Considering the gas release problem in a vacuum environment, the flexible wire 603 is usually made of multiple strands of fine nickel wire, which has a certain degree of flexibility.

[0115] The thermocouple electrode 604 can be a TC (thermocouple) ceramic electrode, similar to an AC ceramic electrode, which embeds two sets of thermocouple wires 605. One set of thermocouple wires 605 is used to detect the temperature of the heating component 6, and the other set of thermocouple wires 605 is used to control the temperature of the heating component 6, enabling rapid temperature control of the upper shielding cylinder 4. The flexible connection between the flexible wire 603 and the thermocouple wires 605 ensures the feasibility of axial movement of the heating component 6 during assembly and radial expansion during the process (approximately 300°C).

[0116] like Figure 8 and Figure 9 As shown, to prevent the exposed flexible wires 603 and thermocouple wires 605 from contacting the upper cavity 1 and the upper-middle cavity 16, an insulating protective cover 18 is installed at the position where the upper-middle cavity 16 contacts the lead wires. This protective cover is formed by the vertical or horizontal connection of the first and second ceramic insulating half-covers. The insulating protective cover 18 ensures that the heating component 6 does not contact the surrounding conductive parts, thus achieving the floating potential of the upper shielding cylinder 4. At the same time, the space inside the insulating protective cover 18 allows for a certain amount of movement of the heating component 6 in the radial and axial directions. The thermocouple electrode 604 is connected to the heating component 6, achieving an electrical connection between the vacuum and the atmosphere, enabling power connection in a vacuum environment.

[0117] In addition, the floating potential of the inner liner assembly is achieved through ceramic components such as ceramic electrodes and insulating protective cover 18, which effectively reduces the probability of arcing.

[0118] In some embodiments, a first electromagnetic device 14 capable of generating a magnetic field within the cavity body is provided on the cavity body. The first electromagnetic device 14 is located on the side of the cavity body near the top of the cavity body, and the magnetic field strength or direction generated by the first electromagnetic device 14 is adjustable; and / or, a second electromagnetic device 13 capable of generating a magnetic field within the cavity body is provided on the cavity body. The second electromagnetic device 13 is located on the side of the cavity body near the bottom of the cavity body, and the magnetic field strength or direction generated by the second electromagnetic device 13 is adjustable.

[0119] like Figure 1 As shown, the first electromagnetic device 14 is embedded in the outer periphery of the upper cavity 16, and can have two sets arranged vertically. The second electromagnetic device 13 is embedded in the part where the lower cavity 7 and the lower cavity 9 connect, and can have two sets arranged vertically or four sets arranged in pairs vertically. The first electromagnetic device 14 and the second electromagnetic device 13 are usually composed of energized coils. When the first electromagnetic device 14 is energized, the magnetic field generated can increase the concentration of plasma gas near the target material 3, thereby improving the sputtering of the target material 3. When the second electromagnetic device 13 is energized, the magnetic field generated can attract sputtered particles to deposit onto the chuck 10 or the product substrate. The direction and magnitude of the current energized by the first electromagnetic device 14 and the second electromagnetic device 13 can be adjusted according to the magnetic field strength or direction required by the process, which can better improve the process quality.

[0120] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details of the above application are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0121] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Unless otherwise defined, the technical or scientific terms used in the claims and description should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar words used in the patent application description and claims of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. The terms "an" or "a" and similar words do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "comprising" or "including" and similar words mean that the element or object preceding "comprising" or "including" encompasses the element or object listed following "comprising" or "including" and its equivalents, and do not exclude other elements or objects. The terms "connected," "coupled," or "linked" and similar words are not limited to physical or mechanical connections, nor are they limited to direct or indirect connections. Words such as “including,” “contains,” and “has” are open-ended words that mean “including but not limited to” and can be used interchangeably with them.

[0122] In this application, the terms "or" and "and / or" describe the relationship between related objects and indicate a non-exclusive inclusion. For example, "A and / or B" and "A or B" can include: only "A" exists, only "B" exists, and both "A" and "B" exist simultaneously, where "A" and "B" can be singular or plural. As another example, "A, B, and / or C" and "A, B, or C" can include: only "A" exists, only "B" exists, only "C" exists, both "A" and "B" exist simultaneously, both "A" and "C" exist simultaneously, both "B" and "C" exist simultaneously, and both "A", "B", and "C" exist simultaneously, where "A", "B", and "C" can be singular or plural. Furthermore, the symbol " / " in this application indicates an "or" relationship between the related objects before and after the symbol. In this application, the term "at least one A or B" has the same meaning as the aforementioned "A or B". The term "at least one A, B or C" has the same meaning as "A, B or C" above.

[0123] In the apparatus and equipment of this application, the components can be disassembled and / or reassembled. These disassemblies and / or reassemblies should be considered as equivalent solutions of this application.

[0124] The above description of the claimed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be applied within the widest scope consistent with the principles and novel features of this application.

[0125] The above description has been given for illustrative and descriptive purposes. Furthermore, this description is not intended to limit the embodiments of this application to the forms described herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A semiconductor process cavity, characterized in that, include: Cavity body; A liner assembly is disposed within the cavity body, and the liner assembly is connected to the cavity body via at least two first insulating members, which are distributed circumferentially along the cavity body.

2. The semiconductor process cavity according to claim 1, characterized in that, At least two of the first insulating elements are provided on one of the cavity body and the inner lining assembly, and the other overlaps on the first insulating element.

3. The semiconductor process cavity according to claim 2, characterized in that, At least two first guide positioning structures extending radially along the cavity body are provided on one of the cavity body and the inner liner assembly that overlaps the first insulating member, and the first insulating member and the first guide positioning structure are slidably connected radially along the cavity body in a one-to-one correspondence.

4. The semiconductor process cavity according to claim 3, characterized in that, The first insulating element includes: The first positioning post extends along the axial direction of the cavity body and slides in cooperation with the first guide positioning structure along the radial direction of the cavity body; The first overlapping boss is disposed on the lower side of the first positioning post and at least partially protrudes from the outer peripheral surface of the first positioning post, and the first guide positioning structure overlaps on the first overlapping boss.

5. The semiconductor process cavity according to claim 1, characterized in that, It also includes a heating assembly for heating the liner assembly, the heating assembly being disposed on the liner assembly; The heating component is connected to the cavity body via a second insulating element.

6. The semiconductor process cavity according to claim 5, characterized in that, The second insulating member is provided on one of the cavity body and the heating assembly, and the other is attached to the second insulating member.

7. The semiconductor process cavity according to claim 6, characterized in that, The second insulating element is at least two, and the at least two second insulating elements are distributed circumferentially along the cavity body; A second guide and positioning structure extending radially along the cavity body is provided on one of the cavity body and the heating assembly that overlaps the second insulating member; The second insulating element includes: The second positioning post extends along the axial direction of the cavity body and slides in cooperation with the second guide positioning structure along the radial direction of the cavity body; The second overlapping boss is disposed on the lower side of the second positioning post and at least partially protrudes from the outer peripheral surface of the second positioning post, and the second guide positioning structure overlaps on the second overlapping boss.

8. The semiconductor process cavity according to claim 5, characterized in that, At least two first support portions are provided on the inner side wall of the cavity body, arranged circumferentially along the cavity body, and the first insulating member is provided on each of the first support portions. A support structure is provided on the outer peripheral surface of the lining component, and at least two first guide positioning structures are provided on the support structure along the circumference of the lining component. The first guide positioning structures are provided in a one-to-one correspondence with the first support portion.

9. The semiconductor process cavity according to claim 8, characterized in that, The support structure includes: An upper support structure is provided along the circumference of the inner lining assembly, and the upper support structure is provided with at least two first connecting holes and at least two first guide positioning structures arranged along the circumference of the inner lining assembly. The lower support structure is arranged along the circumference of the inner lining assembly. The lower support structure is located below the upper support structure and has a gap with the upper support structure. The lower support structure is provided with at least two second connecting holes arranged along the circumference of the inner lining assembly. The second connecting holes are arranged one-to-one with the first connecting holes. The heating component is located on the lower side of the lower support structure, and at least two third connecting holes are provided on the top surface of the heating component. The third connecting holes are arranged in a one-to-one correspondence with the second connecting holes. The heating component is fixedly connected to the support structure by at least two vacuum screws. The vacuum screws are arranged one-to-one with the first connecting hole. The vacuum screws pass through the first connecting hole and the second connecting hole in sequence and are fixed in the third connecting hole.

10. The semiconductor process cavity according to claim 5, characterized in that, At least two second support portions are provided on the inner side wall of the cavity body, arranged circumferentially along the cavity body, and the second insulating member is provided on each of the second support portions in a corresponding manner. The heating component has at least two second guide positioning structures arranged circumferentially on its outer peripheral surface, and the second guide positioning structures are arranged one-to-one with the second support portion.

11. The semiconductor process cavity according to claim 5, characterized in that, The first insulating element and / or the second insulating element are capable of heat insulation.

12. The semiconductor process cavity according to claim 5, characterized in that, The heating assembly is embedded with a heating wire, which includes a heating element, an insulating layer wrapped around the heating element, and a metal shell wrapped around the insulating layer. The heating wire has a lead-out end connected to a power supply electrode, and the power supply electrode has a flexible wire leading out; the heating wire has a thermocouple electrode connected to it, and the thermocouple electrode has a thermocouple wire leading out. An insulating protective cover and a vacuum electrode are provided on the cavity body. The insulating protective cover covers the flexible wire and the thermocouple wire. One end of the vacuum electrode extends into the insulating protective cover and is electrically connected to both the flexible wire and the thermocouple wire. The other end of the vacuum electrode extends out of the cavity body.

13. The semiconductor process cavity according to any one of claims 1-12, characterized in that, The cavity body is provided with a first electromagnetic device that can generate a magnetic field within the cavity body. The first electromagnetic device is located on the side of the cavity body near the top of the cavity body. The strength or direction of the magnetic field generated by the first electromagnetic device is adjustable. And / or, the cavity body is provided with a second electromagnetic device that can generate a magnetic field within the cavity body. The second electromagnetic device is located on the side of the cavity body near the bottom of the cavity body. The magnetic field strength or direction generated by the second electromagnetic device is adjustable.

14. The semiconductor process cavity according to any one of claims 1-12, characterized in that, The liner assembly includes: An upper shielding cylinder is arranged around the upper inner wall of the cavity body, and the top end of the upper shielding cylinder is connected to the target material placed on the top of the cavity body; The lower shielding cylinder is arranged around the lower inner wall of the cavity body; A deposition ring surrounds the outer periphery of a support device disposed at the bottom of the cavity body, and the deposition ring is connected to the support device; A shielding cap ring is disposed around the deposition ring; The upper shielding cylinder, the lower shielding cylinder, the shielding cover ring, and the deposition ring are connected in sequence to form a process space together with the supporting device.

15. A semiconductor process apparatus, characterized in that, include: Semiconductor process cavity as described in any one of claims 1-14; A top cover assembly is provided on the top opening of the semiconductor process cavity, and a target material is disposed on the top cover assembly.

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