Reflecting plate and semiconductor device

Abstract

The invention provides a reflecting plate and semiconductor equipment, the reflecting plate is arranged in a process chamber of the semiconductor equipment, a reflecting layer of the reflecting plate comprises an inner ring part and an outer ring part connected with the inner ring part, the outer ring part and the inner ring part adopt different reflectivity, the inner ring part is provided with a plurality of temperature measuring through holes, and the temperature measuring through holes are communicated with the inner ring part. The temperature measuring through hole is used for installing a temperature measuring sensor. Different reflection areas of the inner ring part and the outer ring part are designed, and the inner ring and the outer ring of the reflection plate have different reflectivity, so that radiation spectrums of different areas or different materials in the process chamber are reflected or absorbed, the thermal budget required by wafers with different patterns is accurately controlled, and the quality of the wafer is improved. Rapid heating and rapid cooling of the wafer of the semiconductor equipment are realized; meanwhile, the radiation spectrum from the periphery of the main projection area of the wafer is absorbed through the outer ring part, so that noise interference to a photosensitive device of the temperature measurement sensor is reduced, and accurate closed-loop control over the temperature of the wafer is achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and more particularly to a reflector and a semiconductor device. Background Technology

[0002] Heat treatment processes are widely used in semiconductor device manufacturing to alter the electrical or physical properties of materials.

[0003] In related technologies, heating lamps are added below the wafer, and the radiant energy of the heating lamps and the radiant energy of the wafer are reflected by a reflector. Temperature sensors are installed on the reflector to detect the temperature inside the process chamber, thereby controlling the thermal budget required for the wafer.

[0004] However, the reflectors of the relevant technologies have a single reflectivity, which cannot reflect or absorb radiation bands from different areas or materials in the process chamber. The heating and cooling rates of the wafer are low, and the temperature measurement accuracy of the temperature sensor on the reflector is affected. Summary of the Invention

[0005] In view of the above problems, this application provides a reflector and a semiconductor device to solve the problems of single reflectivity in the heat treatment process of related technologies, which cannot reflect or absorb the radiation bands of different areas or different materials in the process chamber, and the low heating and cooling rate and poor temperature measurement accuracy of the semiconductor device for wafers.

[0006] To achieve the above objectives, the embodiments of this application provide the following technical solutions:

[0007] This application provides a reflector, the reflective layer of which includes: an inner ring portion; and an outer ring portion connected to the inner ring portion, the reflectivity of the outer ring portion being different from that of the inner ring portion; the inner ring portion is provided with a plurality of temperature sensing through holes for mounting temperature sensors.

[0008] By designing a double-ring reflector with different reflectivities for visible light and mid-to-far infrared spectrum for the inner and outer rings, the reflector can reflect or absorb the radiation spectrum of different regions or materials within the process chamber, thereby precisely controlling the thermal budget required for wafers with different patterns.

[0009] Furthermore, by incorporating multiple temperature sensing vias within the inner ring, the temperature sensor can acquire data closest to the actual wafer temperature. This reduces errors arising from estimations based on the process chamber temperature, enabling direct, real-time monitoring of the wafer temperature. Consequently, precise, uniform, and rapid temperature control is achieved. Moreover, the inner ring housing the temperature sensor, while the outer ring absorbs heat from the surrounding area, reduces interference from heat around the reflector, further improving temperature measurement accuracy and consequently, temperature control precision.

[0010] In one embodiment of this application, the reflectivity of the outer ring is lower than that of the inner ring. The outer ring can absorb heat located at the edge of the thermal field and close to the inner wall of the process chamber, reducing heat accumulation on the inner wall of the process chamber. During wafer cooling, it can quickly dissipate heat, accelerate wafer cooling, and improve the cooling rate. Furthermore, the outer ring's ability to absorb heat at the edge of the thermal field and close to the inner wall of the process chamber reduces heat radiation from the inner wall of the process chamber to the surroundings, thereby ensuring uniform energy distribution and mitigating the load effect caused by uneven heat distribution.

[0011] In one embodiment of this application, the reflectivity of the outer ring is greater than that of the inner ring. The outer ring can reflect heat located at the edge of the thermal field and close to the inner wall of the process chamber, thereby enabling rapid heating of the wafer.

[0012] In one embodiment of this application, for radiation bands with wavelengths less than 20 μm, the reflectivity of the outer ring is less than 5%.

[0013] The absorption band of the outer ring is extended to below 20μm to cover all thermal radiation from room temperature to several hundred degrees Celsius as completely as possible. This absorbs almost all the energy radiated from hot components such as the wafer and the inner wall of the process chamber, ensuring maximum heat absorption efficiency. The outer ring reflects less than 5% of the incident light, with the remaining energy being absorbed or transmitted. This allows for rapid heat dissipation during wafer cooling, ensuring temperature uniformity around the wafer while achieving rapid cooling and improving the cooling rate. During wafer heating, it reduces the accumulation of residual heat on the inner wall of the process chamber, ensuring temperature uniformity from the wafer center to the edge and mitigating the load effect caused by uneven heat distribution.

[0014] In one embodiment of this application, for radiation bands with wavelengths less than 10 μm, the reflectivity of the inner ring is less than 30%; and / or, for radiation bands with wavelengths of 1 μm to 5 μm, the reflectivity of the inner ring is less than 10%; and / or, for radiation bands with wavelengths of 900 nm ± 50 nm, the reflectivity of the inner ring is greater than 99%.

[0015] For radiation wavelengths less than 10 μm, most of the radiation is absorbed rather than reflected back to the wafer, reducing radiative heat exchange between the wafer and the reflector and helping the wafer cool down more quickly after heating. For radiation wavelengths of 1 μm to 5 μm, the reflectivity is extremely low, opening a heat dissipation window for the high-temperature wafer. The high-intensity radiation energy emitted by the wafer is absorbed and conducted away by the reflector, rather than being locked inside the cavity, making heat dissipation more efficient. For radiation wavelengths of 900 nm ± 50 nm, the reflectivity is extremely high, ensuring that the radiation energy emitted by the wafer itself is efficiently delivered to the wafer during the rapid heating phase, achieving rapid heating. At the same time, the high reflectivity also reduces the loss of radiation used for temperature measurement in the transmission path, making the signal received by the temperature sensor stronger.

[0016] In one embodiment of this application, the inner ring portion is provided with an air groove, and the plurality of temperature measuring through holes are disposed in the air groove.

[0017] The air trough connects multiple temperature measuring holes to form a common air channel, allowing the gas in the multiple temperature measuring holes to exchange heat through the air trough. Through the convection and heat conduction of the gas in the air trough, the local temperature difference between the temperature measuring holes is effectively eliminated. The measured temperature data can better reflect the overall average temperature of the measured area, rather than local hot spots, thus improving the accuracy of temperature measurement.

[0018] In one embodiment of this application, the air groove is further provided with multiple air inlets.

[0019] Multiple air inlets serve as helium injection ports, enabling rapid cooling of the wafer and improving cooling efficiency. Furthermore, the helium injected through the air inlets ensures optimal thermal contact near the temperature sensor, resulting in measurements closer to the actual wafer temperature and improving the accuracy of process control.

[0020] In one embodiment of this application, the outer ring surrounds the inner ring. By absorbing the radiation spectrum from the periphery of the main projection area of ​​the wafer, the outer ring reduces noise interference to the photosensitive device of the temperature sensor, thereby achieving precise closed-loop control of the wafer temperature.

[0021] In one embodiment of this application, a plurality of outer ring portions are arranged at intervals around the outer periphery of the inner ring portion.

[0022] In one embodiment of this application, the inner ring portion includes multiple stacked reflective substrates and a first absorption layer, wherein the reflectivity of the first absorption layer is less than the reflectivity of the reflective substrate.

[0023] The reflective substrate is designed to highly reflect the thermal radiation energy of the wafer, thereby reflecting most of the energy back to the wafer and slowing down heat loss. Although the reflective substrate reflects most of the thermal radiation energy, some energy still penetrates or is absorbed. The first absorption layer is designed to absorb this energy. The stacked structure of the reflective substrate and the first absorption layer with high absorptivity achieves "selective" absorption and reflection of thermal radiation energy in different wavelength bands, thereby precisely controlling the thermal behavior of the inner ring and ensuring the uniformity of the overall wafer temperature and cooling efficiency.

[0024] In one embodiment of this application, the outer ring portion includes multiple stacked second absorption layers, the reflectivity of the second absorption layers being less than the reflectivity of the reflective substrate.

[0025] By stacking second absorption layers with high absorption rates, each layer is responsible for efficiently absorbing a specific sub-band. When they are combined, they can cover the entire target spectrum, thereby achieving the design goal of extremely high absorption rate over a wide band.

[0026] In one embodiment of this application, the first absorbent layer and the second absorbent layer are made of the same material.

[0027] Using the same material means that the same process formula and the same source material can be used when depositing the absorption layer in the inner and outer rings, which greatly simplifies the manufacturing process, reduces costs, and improves consistency and reliability.

[0028] This application embodiment also provides a semiconductor device, which includes a heat source, a process chamber, and a reflector as described above. The heat source and the reflector are installed in the process chamber. A support stage is provided in the process chamber for placing a wafer. The projected area of ​​the inner ring portion along the axial direction of the reflector is greater than or equal to the projected area of ​​the wafer along the axial direction of the reflector.

[0029] By placing the reflector described above in a semiconductor device, with the inner ring of the reflector completely covering the wafer, efficient heat reflection or absorption within the inner ring and efficient heat reflection or absorption around the wafer from the outer ring are ensured. This improves the uniformity of thermal radiation around the wafer and the wafer's heating and cooling rates, thereby enhancing the thermal management capabilities of the semiconductor device. Furthermore, by absorbing radiation from the periphery of the wafer's main projection area through the outer ring, noise interference to the photosensitive components of the temperature sensor is reduced, enabling precise closed-loop control of the wafer temperature.

[0030] In one embodiment of this application, the reflector is mounted on the top of the process chamber, and the front side of the reflector is positioned opposite the patterned surface of the wafer; the heat source is disposed at the bottom of the process chamber, and the heat source is positioned opposite the unpatterned surface of the wafer.

[0031] The unpatterned side of a wafer is an untreated, uniform surface. By placing a heat source below the unpatterned side, heat is uniformly input from the unpatterned side and uniformly transferred to the patterned side. At the same time, the reflector facing the patterned side compensates for the heat unevenness caused by the pattern, creating a uniform radiation environment for the patterned side. This ensures that both the patterned and unpatterned sides of the wafer are in a uniform temperature field, thereby reducing the load effect caused by heat unevenness. Attached Figure Description

[0032] To more clearly illustrate the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 A schematic diagram of the structure of a reflector disposed in a semiconductor device according to an embodiment of this application. Figure 1 ;

[0034] Figure 2 A schematic diagram of the structure of a reflector disposed in a semiconductor device according to an embodiment of this application. Figure 2 ;

[0035] Figure 3 A front view of the reflector provided in an embodiment of this application;

[0036] Figure 4 This is a schematic diagram of the back of the reflector provided in an embodiment of this application;

[0037] Figure 5 A cross-sectional view of the inner ring of the reflector provided in an embodiment of this application.

[0038] Figure label:

[0039] 100 - Inner circle;

[0040] 101-Temperature measuring through hole; 102-Threaded connector; 103-Annular sealing groove; 104-Air groove; 105-Air inlet;

[0041] 200 - Outer ring;

[0042] 201-Substrate; 202-Underlayer; 204-First Absorbing Layer; 205-Reflective Base Layer; 206-Second Absorbing Layer;

[0043] 301 - Process chamber; 302 - Temperature detector; 303 - Reflector; 304 - Wafer; 305 - Heat source; 306 - Temperature controller;

[0044] 3011-Support platform; 3012-Hot zone; 3021-Temperature sensor. Detailed Implementation

[0045] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0046] refer to Figure 1 , Figure 2 and Figure 3 The reflector provided in this application embodiment is used in semiconductor equipment for heat treatment processes in semiconductor device manufacturing, such as rapid thermal annealing equipment for annealing processes.

[0047] The semiconductor device in this application embodiment includes a process chamber 301 and a heat source 305 disposed at the bottom of the process chamber 301. The heat source 305 may be a lamp nest, an arc lamp, or a hot plate.

[0048] A support platform 3011 is provided inside the process chamber 301, which is used to place the wafer 304; the heat source 305 is located directly below the wafer 304 to form a thermal field 3012 inside the process chamber 301.

[0049] The back of the reflector 303 is disposed on the top inner wall of the process chamber 301, and in the first direction (the vertical z-axis shown in the figure), the wafer 304 includes opposite patterned and unpatterned surfaces. The patterned surface refers to the side that has been processed by photolithography, etching and other processes and is covered with micron or nano-scale circuit structures; the unpatterned surface refers to the side without circuit structures.

[0050] The front side of the reflector 303 faces the patterned side of the wafer 304, and the heat source 305 faces the unpatterned side of the wafer 304.

[0051] The reflective layer of the reflector includes an inner ring portion 100 and an outer ring portion 200 connected to the inner ring portion 100.

[0052] The reflector 303 can be a circular plate with a diameter of up to 356 mm and a thickness of 15 mm. The inner ring 100 is the inner ring of the circular plate, and the outer ring 200 is the outer ring of the circular plate. The diameter of the outer ring 200 is larger than the diameter of the inner ring 100. The diameter of the inner ring 100 can be greater than 300 mm.

[0053] In some embodiments, the outer ring portion 200 surrounds the inner ring portion 100, meaning that the area where the outer ring portion 200 is located is at the edge of the thermal field 3012. By absorbing the radiation spectrum from the periphery of the wafer's main projection area, the outer ring portion 200 reduces noise interference to the photosensitive device of the temperature sensor 3021, thereby achieving precise closed-loop control of the wafer temperature. In some embodiments, a plurality of outer ring portions 200 are arranged at intervals around the outer periphery of the inner ring portion 100.

[0054] The outer ring 200 has a different reflectivity than the inner ring 100. By designing a double-ring reflector 303, and making the inner ring 100 and outer ring 200 of the reflector have different reflectivities for visible light and mid-to-far infrared spectrum, the reflector can reflect or absorb the radiation spectrum of different regions or materials in the process chamber 301, thereby precisely controlling the thermal budget required for wafers with different patterns.

[0055] In some embodiments, the reflectivity of the outer ring portion 200 is less than that of the inner ring portion 100. By designing a double-ring reflector 303, and making the inner ring portion 100 and the outer ring portion 200 of the reflector 303 have different reflectivities, the radiation spectrum of different regions within the process chamber 301 can be reflected or absorbed. Reflectivity + thermal transmittance + thermal absorptivity = 1. The outer ring portion 200 can absorb the radiation spectrum from the periphery of the wafer's main projection area, reducing heat accumulation on the inner wall of the process chamber 301. During wafer cooling, it can quickly dissipate heat, accelerate wafer cooling, and improve the cooling rate. Furthermore, the outer ring portion 200 can absorb the radiation spectrum from the periphery of the wafer's main projection area, reducing heat radiation from the inner wall of the process chamber 301 to the surroundings, thereby ensuring uniform energy distribution and mitigating the load effect caused by uneven heat distribution.

[0056] In some embodiments, the reflectivity of the outer ring portion 200 is greater than that of the inner ring portion 100. The outer ring portion 200 can reflect the radiation spectrum around the main projection area of ​​the wafer, thereby enabling rapid heating of the wafer.

[0057] Among them, heat source 305 can be a lamp nest, which heats wafer 304 through thermal radiation.

[0058] refer to Figure 1 , Figure 3 and Figure 4 The inner ring 100 is provided with multiple temperature measuring holes 101, which are used to install temperature sensors 3021.

[0059] The temperature detector 302 is installed on the top outer wall of the process chamber 301. The temperature detector 302 has multiple temperature sensors 3021. The temperature through hole 101 allows the temperature sensors 3021 of the temperature detector 302 to pass through and extend into the process chamber 301 to measure the temperature of the wafer 304.

[0060] Through multiple temperature sensing holes 101 in the inner ring 100, the temperature sensor 3021 can acquire data closest to the actual wafer temperature, reducing errors caused by estimations based on the process chamber temperature. This enables direct, real-time monitoring of the wafer temperature, thereby achieving precise, uniform, and rapid control of the wafer temperature. Furthermore, the installation of the temperature sensor 3021 in the inner ring 100, combined with the heat absorption of the surrounding area by the outer ring 200, reduces interference from heat around the reflector 303 on the temperature sensor 3021, improving temperature measurement accuracy and consequently, temperature control accuracy.

[0061] During the heating stage, the heat source can be precisely adjusted based on the real-time temperature data of the wafer to prevent overheating or insufficient heating, and to achieve precise control of the heating rate. During the cooling stage, the cooling can be dynamically controlled based on the real-time temperature data of the wafer to achieve rapid and controlled cooling.

[0062] The inner ring 100 may be provided with nine temperature measuring holes 101, which are distributed in different areas of the inner ring 100 to improve the accuracy of temperature measurement.

[0063] In this embodiment, the measurement wavelength of the temperature sensor 3021 is within the radiation band of 900nm±50nm with a reflectivity greater than 99% in the inner ring portion 100. Alternatively, the measurement wavelength of the temperature sensor 3021 may be the same as the wavelength of the radiation band of 900nm±50nm with a reflectivity greater than 99%.

[0064] In other words, the radiation wavelength corresponding to the temperature measurement falls within the high reflectivity band, reducing the amount of other thermal radiation entering the temperature sensor 3021 through the reflector 303, or reducing the absorption or scattering of the temperature measurement signal in the low reflectivity band, thus ensuring signal strength and achieving accurate temperature measurement in the high reflectivity band.

[0065] It should be noted that for the radiation band with a wavelength of 900nm±50nm, the reflectivity of the inner ring 100 is greater than the sum of the thermal absorptivity and thermal transmissivity of the inner ring 100. This ensures that the inner ring 100 can reflect most of the radiation band of 900nm±50nm, enabling rapid heating of the wafer. It also reduces the loss of the temperature measurement band in the transmission path, making the signal received by the temperature sensor 3021 stronger.

[0066] In this embodiment of the application, for radiation bands with wavelengths less than 20 μm, the reflectivity of the outer ring 200 is less than 5%.

[0067] The absorption band of the outer ring 200 is extended to within 20μm to cover all thermal radiation from room temperature to hundreds of degrees Celsius as completely as possible, absorbing almost all the energy radiated by hot components such as the wafer and the inner wall of the process chamber 301, ensuring maximum heat absorption efficiency.

[0068] Within the radiation band of 20μm, the outer ring 200 reflects less than 5% of the incident light, while the remaining energy is absorbed or transmitted. This achieves the purpose of regulating thermal radiation by absorbing radiation bands of specific wavelengths. When the wafer is cooled, it reduces the accumulation of residual heat on the inner wall of the process chamber 301, rapidly dissipates heat, ensures temperature uniformity around the wafer, and achieves rapid cooling, thereby improving the cooling rate. When the wafer is heated, it also reduces the accumulation of residual heat on the inner wall of the process chamber 301, ensuring temperature uniformity from the center to the edge of the wafer and mitigating the load effect caused by uneven heat distribution.

[0069] In this embodiment of the application, for radiation bands with wavelengths less than 10 μm, the reflectivity of the inner ring portion 100 is less than 30%.

[0070] For radiation wavelengths less than 10 μm, most of the radiation is absorbed rather than reflected back to the wafer, reducing radiative heat exchange between the wafer and the reflector and helping the wafer cool down more quickly after heating.

[0071] In this embodiment of the application, for the radiation band with wavelengths of 1μm to 5μm, the reflectivity of the inner ring portion 100 is less than 10%.

[0072] For the radiation band with wavelengths of 1μm to 5μm, the reflectivity is extremely low, which opens a heat dissipation window for high-temperature wafers. The high-intensity radiation energy emitted by the wafer is absorbed and guided away by the reflector, rather than being locked in the cavity, making heat dissipation more efficient.

[0073] In this embodiment of the application, for a radiation band with a wavelength of 900nm±50nm, the reflectivity of the inner ring 100 is greater than 99%.

[0074] For the radiation band with a wavelength of 900nm±50nm, the reflectivity is extremely high, which can ensure that the radiation energy emitted by the wafer itself is efficiently delivered to the wafer during the rapid heating stage, thus achieving rapid heating. At the same time, the high reflectivity also reduces the loss of radiation used for temperature measurement in the transmission path, making the signal received by the temperature sensor stronger.

[0075] refer to Figure 3 and Figure 4 In this embodiment of the application, the back side and inner ring 100 of the reflector are provided with an air groove 104, and a plurality of temperature measuring holes 101 are provided in the air groove 104, so that the air groove 104 connects the plurality of temperature measuring holes 101 to each other to form a common air cavity, so that the gas in the plurality of temperature measuring holes 101 can exchange heat through the air groove 104.

[0076] Through the convection and heat conduction of the gas in the air groove 104, the local temperature difference between the various temperature measuring holes 101 is effectively eliminated. The measured temperature data can better reflect the overall average temperature of the measured area, rather than local hot spots, thus improving the accuracy of temperature measurement.

[0077] refer to Figure 3 and Figure 4 In this embodiment, the bottom of the gas tank 104 is provided with multiple air inlets 105, which serve as helium injection holes, enabling the wafer 304 to cool down rapidly and improving cooling efficiency. Furthermore, the helium injected through the air inlets 105 ensures optimal thermal contact near the temperature sensor, thereby obtaining a measurement value closer to the actual temperature of the wafer and improving the accuracy of process control.

[0078] refer to Figure 5 In this embodiment of the application, the inner ring portion 100 includes a plurality of stacked reflective base layers 205 and a first absorption layer 204, wherein the reflectivity of the first absorption layer 204 is less than the reflectivity of the reflective base layer 205.

[0079] The reflective substrate 205 is designed to highly reflect the thermal radiation energy of the wafer, thereby reflecting most of the energy back to the wafer and slowing down the heat loss of the wafer; although the reflective substrate 205 reflects most of the thermal radiation energy, some energy will still penetrate or be absorbed, and the first absorption layer 204 is designed to absorb this energy.

[0080] The stacked structure of the reflective base layer 205 and the first absorption layer 204 with high absorptivity enables "selective" absorption and reflection of thermal radiation energy in different bands, thereby precisely controlling the thermal behavior of the inner ring 100 and ensuring the uniformity of the overall wafer temperature and cooling efficiency.

[0081] In this embodiment, the first absorption layer 204 includes SiO2, and the reflective substrate 205 includes TiO2.

[0082] The core characteristics of TiO2 are high reflectivity and low absorption. The reflectivity of TiO2 is much higher than that of SiO2. When two materials with large differences in reflectivity are stacked alternately at a specific thickness, strong light reflection will be generated, thus giving it extremely high reflectivity for target thermal radiation within a specific wavelength range.

[0083] In this embodiment, the outer ring portion 200 includes a plurality of stacked second absorption layers 206, the reflectivity of the second absorption layers 206 being less than the reflectivity of the reflective substrate 205.

[0084] By stacking 206 second absorption layers with high absorption rates, each layer is responsible for efficiently absorbing a specific sub-band. When they are combined, they can cover the entire target spectrum, thereby achieving the design goal of extremely high absorption rate over a wide band.

[0085] In some embodiments of this application, the first absorption layer 204 and the second absorption layer 206 are made of the same material, SiO2.

[0086] In some other embodiments of this application, the second absorption layer 206 may be a light-absorbing film composed of carbon material.

[0087] The first absorber layer 204 and the second absorber layer 206 are typically completed using processes such as PVD (physical vapor deposition), CVD (chemical vapor deposition), or ALD (atomic layer deposition). Using the same material means that when depositing the absorber layers of the inner ring 100 and the outer ring 200, the same process formulation and the same source material can be used, which greatly simplifies the manufacturing process, reduces costs, and improves consistency and reliability.

[0088] In this embodiment, in addition to the reflective layer, the reflector also includes a substrate 201 and a base layer 202 stacked on the front side of the substrate 201.

[0089] The substrate 201 is made of 6061 aluminum alloy. After solution treatment, the 6061 aluminum alloy is subjected to tensile stress relief to reduce the processing deformation caused by internal stress. Then, the substrate 201 is subjected to ultra-precision machining, including low roughness machining of the upper surface of the substrate 201, so that the roughness Ra is 2.0nm.

[0090] The base layer 202 is a nickel plating layer with a thickness of 35μm. After the nickel plating is completed, polishing is required to ensure that the base layer 202 meets the requirements for film coating.

[0091] Among them, the bottom layer 202 can be composed of high phosphorus nickel, which refers to nickel materials or nickel alloys with a high phosphorus content. High phosphorus nickel has good wear resistance.

[0092] The inner ring 100 area of ​​the base layer 202 is provided with multiple layers of reflective base layer 205 and first absorption layer 204, and the outer ring 200 area of ​​the base layer 202 is provided with multiple layers of second absorption layer 206.

[0093] The substrate 201 is the mechanical body of the reflector, providing a robust and flat carrier for the entire multilayer film structure. The underlayer 202 is a transition layer between the substrate 201 and the functional layers (reflective base layer 205, first absorption layer 204, and second absorption layer 206), providing a smoother starting surface for the functional layers, improving the adhesion between the functional layers and the substrate 201, and preventing peeling and flaking; at the same time, it also isolates the functional layers from the substrate 201, ensuring the chemical stability of the reflector under long-term high-temperature operation.

[0094] In this process, a film is deposited on the base layer 202 by physical vapor deposition. The reflective base layer 205 is a TiO2 film layer, and the first absorption layer 204 is a SiO2 film layer.

[0095] In this embodiment, the number of layers of the reflective substrate 205 is greater than 20; the number of layers of the first absorption layer 204 is greater than 20; and the number of layers of the combination of multiple stacked reflective substrates 205 and first absorption layers 204 is greater than 50. This ensures that the reflector can achieve selective absorption and reflection.

[0096] Continue to refer to Figure 4 In this embodiment, at least one threaded connector 102 is provided on the back side of the substrate 201. The threaded connector 102 matches the mounting hole provided on the top inner wall of the process chamber 301, so that the reflector 303 is connected to the inner wall of the process chamber 301 by threaded connection. The installation method is simple and will not affect other components.

[0097] The back of the substrate 201 is also provided with at least one annular sealing groove 103, each annular sealing groove 103 is respectively surrounded by a corresponding threaded connector 102, and each annular sealing groove 103 is provided with a sealing element to ensure the sealing of the process chamber 301.

[0098] Among them, seven threaded connectors 102 can be provided on the substrate 201.

[0099] refer to Figure 1 This application also provides a semiconductor device, which includes a heat source 305, a process chamber 301 and a reflector 303 as described above.

[0100] A heat source 305 and a reflector 303 are installed inside a process chamber 301. A support platform 3011 is provided inside the process chamber 301 for placing a wafer 304. The projected area of ​​the inner ring portion 100 of the reflector 303 along the reflector axis (first direction, the vertical z-axis shown in the figure) is greater than or equal to the projected area of ​​the wafer 304 along the reflector axis. In other words, the inner ring portion 100 can completely cover the wafer 304.

[0101] By placing a reflector 303 in the semiconductor device, with its inner ring 100 completely covering the wafer, efficient heat reflection or absorption by the inner ring 100 and efficient heat reflection or absorption by the outer ring 200 around the wafer can be ensured. Since the outer ring 200 extends to the periphery of the main projection area of ​​the wafer, the reflection and absorption range of the reflector 303 can be expanded, improving the uniformity of thermal radiation around the wafer and the wafer's heating and cooling rates, thereby enhancing the thermal management capabilities of the semiconductor device. Furthermore, by absorbing the radiation spectrum from the periphery of the main projection area of ​​the wafer, noise interference to the photosensitive device of the temperature sensor is reduced, enabling precise closed-loop control of the wafer temperature.

[0102] In this embodiment, in the first direction (the vertical z-axis shown in the figure), the wafer 304 includes opposing patterned and unpatterned surfaces; a reflector 303 is disposed on the top inner wall of the process chamber 301, and the reflector 303 is opposite to the patterned surface of the wafer 304; a heat source 305 is disposed at the bottom of the process chamber 301, and the heat source 305 is opposite to the unpatterned surface of the wafer 304, for forming a thermal field 3012 in the process chamber 301.

[0103] The unpatterned surface of the wafer is an untreated, uniform surface. By placing the heat source 305 below the unpatterned surface of the wafer, heat will be uniformly input from the unpatterned surface and uniformly transferred to the patterned surface. At the same time, the reflector 303 facing the patterned surface compensates for the heat unevenness caused by the pattern, creating a uniform radiation environment for the patterned surface. This ensures that both the patterned and unpatterned surfaces of the wafer are in a uniform temperature field, thereby reducing the load effect caused by heat unevenness.

[0104] In this embodiment of the application, the semiconductor device further includes a temperature detector 302 and a temperature controller 306.

[0105] Temperature detector 302 is mounted on top of process chamber 301. Temperature detector 302 has multiple temperature sensors 3021, which extend into process chamber 301 through multiple temperature sensing through-holes 101 provided on the inner ring 100 of reflector 303 to measure the temperature of wafer 304. Furthermore, the inner ring 100 houses the temperature sensors 3021, while the outer ring 200 absorbs heat from the surrounding area, reducing interference from heat around reflector 303 on the temperature sensors 3021, thus improving temperature measurement accuracy and consequently temperature control accuracy.

[0106] Temperature detector 302 is electrically connected to heat source 305 through temperature controller 306. Temperature detector 302 is used to feed back the temperature data of wafer 304 to temperature controller 306 in real time. Temperature controller 306 is used to control the power of heat source 305 according to the temperature data provided by temperature detector 302, realizing non-contact, high-precision temperature control.

[0107] In summary, this application provides a reflector and a semiconductor device. The reflector includes an inner ring portion 100 and an outer ring portion 200 surrounding the inner ring portion 100. The reflectivity of the outer ring portion 200 is less than that of the inner ring portion 100. The inner ring portion 100 is provided with a plurality of temperature sensing through holes 101 for mounting temperature sensors 3021.

[0108] By designing a double-ring reflector with different reflectivities for the inner ring 100 and outer ring 200, the reflector can reflect or absorb radiation spectra from different regions within the process chamber 301. The outer ring 200 can absorb heat located at the edge of the thermal field 3012 and near the inner wall of the process chamber 301, reducing heat accumulation on the inner wall of the process chamber 301. This allows for rapid heat dissipation during wafer cooling, accelerating the cooling process and increasing the cooling rate. Furthermore, the outer ring 200's ability to absorb heat at the edge of the thermal field 3012 and near the inner wall of the process chamber 301 reduces heat radiation from the inner wall of the process chamber 301 to the surrounding areas, ensuring uniform energy distribution and mitigating the load effect caused by uneven heat distribution.

[0109] Meanwhile, by setting multiple temperature sensing through-holes 101 in the inner ring 100, the temperature sensor 3021 can obtain data closest to the actual temperature of the wafer, reducing errors caused by estimation based on the temperature of the process chamber. This enables direct, real-time monitoring of the wafer temperature, thereby achieving precise, uniform, and rapid control of the wafer temperature. Furthermore, the installation of the temperature sensor 3021 in the inner ring 100, combined with the absorption of heat from the surrounding area by the outer ring 200, reduces interference from heat around the reflector 303 on the temperature sensor 3021, improving temperature measurement accuracy and thus enhancing temperature control accuracy.

[0110] The various embodiments or embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other.

[0111] It should be noted that the terms "one embodiment," "embodiment," "exemplary embodiment," "some embodiments," etc., mentioned in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0112] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0113] It should be readily understood that the terms “on,” “above,” and “on top of” in this disclosure should be interpreted in the broadest possible sense, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on top of something” but also “on top of something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0114] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0115] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A reflector, characterized in that, The reflective layer of the reflector includes: Inner circle; and The outer ring portion connected to the inner ring portion has a different reflectivity than the inner ring portion; The inner ring is provided with multiple temperature measuring holes, which are used to install temperature sensors.

2. The reflector according to claim 1, characterized in that, The reflectivity of the outer ring is less than that of the inner ring.

3. The reflector according to any one of claims 1-2, characterized in that, For radiation bands with wavelengths less than 20 μm, the reflectivity of the outer ring is less than 5%.

4. The reflector according to any one of claims 1-3, characterized in that, For radiation bands with wavelengths less than 10 μm, the reflectivity of the inner ring is less than 30%; and / or, For radiation bands with wavelengths of 1 μm to 5 μm, the reflectivity of the inner ring is less than 10%; and / or, For a radiation band with a wavelength of 900nm±50nm, the reflectivity of the inner ring is greater than 99%.

5. The reflector according to any one of claims 1-4, characterized in that, The inner ring is provided with an air groove, and the multiple temperature measuring through holes are located in the air groove. The air groove is also provided with multiple air inlets.

6. The reflector according to claims 1-5, characterized in that, The outer ring surrounds the inner ring.

7. The reflector according to any one of claims 1-6, characterized in that, The inner ring includes multiple stacked reflective substrates and a first absorption layer, wherein the reflectivity of the first absorption layer is less than that of the reflective substrate.

8. The reflector according to claim 7, characterized in that, The outer ring portion includes multiple stacked second absorption layers, the reflectivity of which is less than that of the reflective substrate.

9. A semiconductor device, characterized in that, It includes a heat source, a process chamber, and a reflector as described in any one of claims 1-8, wherein the heat source and the reflector are installed in the process chamber; The process chamber is equipped with a support platform, which is used to hold the wafer. The projected area of ​​the inner ring along the axis of the reflector is greater than or equal to the projected area of ​​the wafer along the axis of the reflector.

10. The semiconductor device according to claim 9, characterized in that, The reflector is mounted on the top of the process chamber, and the front side of the reflector is positioned opposite the patterned surface of the wafer. The heat source is located at the bottom of the process chamber and is positioned opposite the unpatterned surface of the wafer.

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