Semiconductor device capable of detecting fracture state of preheating ring

Abstract

The invention discloses a semiconductor device capable of detecting the fracture state of a preheating ring, and the device comprises a cavity which comprises an upper dome, a lining, and a lower dome, the base is arranged in the cavity and is used for bearing a wafer; the preheating ring is arranged on the lining; the piezoelectric charge excitation unit is used for detecting the pressure change of the preheating ring and generating a corresponding charge signal; and the signal collection and analysis unit is used for receiving and processing the charge signal and judging the fracture state of the preheating ring according to the processed charge signal. According to the invention, real-time and non-intrusive monitoring of the fracture state of the preheating ring in semiconductor equipment is realized; time delay and potential risks caused by traditional manual inspection or regular shutdown maintenance are avoided, and the stability and reliability of the epitaxial process are improved; no extra power supply is needed, the detection cost is saved, and the risk that the fracture state of the preheating ring cannot be detected possibly caused by power failure of equipment is avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a semiconductor equipment capable of detecting the fracture state of a preheating ring. BACKGROUND

[0002] In a semiconductor epitaxial equipment, a preheating ring is a key component in the semiconductor epitaxial equipment. The preheating ring can increase the temperature of a precursor before the precursor flows over a wafer, thereby improving the deposition rate and film uniformity of the precursor on the wafer. However, the preheating ring may be fractured due to thermal stress generated during repeated temperature rising and falling processes, and if it cannot be found and maintained in time, it will lead to epitaxial process failure or even damage to the process chamber.

[0003] In the prior art, the damage of the preheating ring is usually detected by manual inspection or regular shutdown maintenance, which cannot find the fracture of the preheating ring and the potential risks it brings in time. Therefore, there is an urgent need for an efficient and real-time semiconductor epitaxial equipment with the function of detecting the fracture state of the preheating ring to ensure the stability and reliability of the epitaxial process. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor equipment capable of detecting the fracture state of a preheating ring to solve the problem that in the existing semiconductor epitaxial equipment, the determination of the fracture state of the preheating ring relies on manual inspection and needs regular shutdown maintenance, and the fracture state of the preheating ring cannot be detected in real time.

[0005] To achieve the above purpose, the present application realizes the following technical scheme: The present application provides a semiconductor equipment capable of detecting the fracture state of a preheating ring, comprising: a cavity, the cavity comprising an upper dome, an inner liner and a lower dome arranged in sequence; a susceptor arranged in the cavity for carrying a wafer; a preheating ring surrounding the outer periphery of the susceptor; a piezoelectric charge excitation unit built in the inner liner and located below the preheating ring for detecting the pressure change of the preheating ring and generating a corresponding charge signal; a signal collection and analysis unit electrically connected with the piezoelectric charge excitation unit for receiving and processing the charge signal, and judging the fracture state of the preheating ring according to the processed charge signal.

[0006] Preferably, the piezoelectric charge excitation unit comprises: a piezoelectric module for sensing pressure changes and generating the charge signal, the piezoelectric module being electrically connected to the signal collection and analysis unit through a connecting line; a pressure conduction module, the upper end of the pressure conduction module supporting the preheating ring, the lower end of the pressure conduction module being in contact with the piezoelectric module for conducting pressure changes of the preheating ring.

[0007] Preferably, the pressure conduction module is a force-bearing pin; the force-bearing pin comprises an upper end and a rod portion extending axially from the upper end, the lower end of the rod portion away from the upper end being a sharp structure; the upper end of the force-bearing pin has an engagement surface, the force-bearing pin being in contact with the preheating ring through the engagement surface, and the sharp structure of the lower end of the force-bearing pin is used to conduct the pressure of the preheating ring to the piezoelectric module.

[0008] Preferably, the piezoelectric module comprises a component unit formed by a mass unit, a piezoelectric structure and an electrode assembly: the mass unit is a sleeve structure arranged radially along the base, one end of the sleeve structure is a closed portion, the other end opposite to the closed portion is an open portion, and the closed portion of the mass unit is provided with a receiving cavity; a groove is formed on the surface of the mass unit facing the pressure conduction module, the groove is configured to cooperate with the lower end of the pressure conduction module; and the receiving cavity is located below the groove. The piezoelectric structure is arranged in the receiving cavity of the mass unit, and is used to sense pressure changes of the preheating ring and convert them into charge signals. The electrode assembly is arranged on the surface of the piezoelectric structure, and is connected to the signal collection and analysis unit through a connecting line; the electrode assembly comprises an upper electrode and a lower electrode, and the upper electrode and the lower electrode are arranged on the upper surface and the lower surface of the piezoelectric structure facing the pressure conduction module, respectively.

[0009] Preferably, the inner liner comprises an upper inner liner and a lower inner liner, the upper inner liner is located between the upper dome and the base, and the lower inner liner is located between the lower dome and the base; the piezoelectric charge excitation unit is arranged in the lower inner liner; the outer part of the inner liner opposite to the inside of the cavity is provided with a side wall; the lower inner liner and the side wall respectively have a first mounting hole and a first through hole extending radially along the base and communicating with each other, the mass unit is arranged in the first mounting hole and the first through hole which communicate with each other, the receiving cavity of the mass unit is arranged in the first mounting hole of the lower inner liner, the open portion of the mass unit is arranged in the first through hole of the side wall, the first end of the connecting line is connected to the piezoelectric structure, and the second end of the connecting line extends to the outside of the cavity through the first mounting hole and the first through hole and is connected to the signal collection and analysis unit. The lower inner liner is also provided with a second mounting hole, a center axis of the second mounting hole is at an angle of 0-60 degrees with the cavity center axis, the second mounting hole is communicated with the first mounting hole, the second mounting hole is used for accommodating a pressure conduction module, and an upper end of the pressure conduction module protrudes from the second mounting hole.

[0010] Preferably, the opening part of the mass unit protrudes from the first through hole of the side wall, and the opening part is internally fixed with a fixing part; the fixing part comprises a head part and a connecting segment connected with each other, the connecting segment extends to the inside of the opening part, and the head part abuts against the port of the opening part.

[0011] Preferably, a bushing is further arranged between the inner surface of the opening part and the fixing part, the bushing is in interference fit with the inner surface of the opening part, the fixing part is in threaded connection with the inner surface of the bushing, and the fixing part is provided with a channel for placing a connecting wire.

[0012] Preferably, the pressure conduction module has a matching gap with the second mounting hole, the matching gap is in a set range, the set range is configured to avoid vibration of the pressure conduction module caused by the preheating ring and to ensure conduction of the pressure conduction module to pressure change of the preheating ring.

[0013] Preferably, the first mounting hole is a blind hole, one end of the first mounting hole close to the base is closed, and the first mounting hole is provided with a sealing part at an end away from the base, the sealing part is located at the junction of the first mounting hole and the first through hole.

[0014] Preferably, the piezoelectric charge excitation unit is provided in plurality, and the plurality of piezoelectric charge excitation units are arranged in central symmetry with respect to the center of the preheating ring.

[0015] Compared with the prior art, the present application has the following beneficial effects: The present application provides a semiconductor device capable of detecting the fracture state of a preheating ring, which realizes real-time and non-invasive monitoring of the fracture state of the preheating ring through the piezoelectric charge excitation unit and the signal collection and analysis unit built in the inner liner. When the preheating ring is fractured, the piezoelectric unit can instantly capture the slight pressure change and generate a characteristic charge signal, which is amplified and analyzed to timely issue an alarm, avoiding the delay and potential risk of traditional manual inspection or regular shutdown maintenance, and improving the stability and reliability of the epitaxial process. The piezoelectric detection mechanism of the present application responds more quickly and accurately, can generate high / low frequency charge signals at the moment of abnormality, realizes fault alarm, and does not require additional power supply, saving detection cost and avoiding the risk of being unable to detect the fracture state of the preheating ring due to power failure of the equipment.

[0016] The piezoelectric module of the present application comprises a mass unit, a piezoelectric structure and an electrode assembly, the mass unit is a sleeve structure, the piezoelectric structure and the electrode assembly are integrated into the sleeve structure to form a component unit which is convenient to disassemble, the component unit is first assembled into a complete component and then installed or dismounted with the inner liner. The mass unit is further provided with a first through hole protruding from the side wall, the protruding part of the mass unit is convenient to install and dismount the mass unit from the inner liner and the side wall during cavity maintenance. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the present application, the drawings required to be used in the description will be briefly introduced as follows, obviously, the drawings in the following description are three embodiments of the present application, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art: Figure 1 The schematic diagram of the semiconductor device capable of detecting the preheating ring fracture state provided by an embodiment of the present application; Figure 2 The structural schematic diagram of the piezoelectric charge excitation unit provided by an embodiment of the present application; Figure 3 The structural schematic diagram of the piezoelectric module provided by an embodiment of the present application; Figure 4 The sectional view of the piezoelectric module provided by an embodiment of the present application; Figure 5 The distribution schematic diagram of the pressure transmission module on the inner liner provided by an embodiment of the present application.

[0018] Explanation of reference numerals: 100-cavity; 101-upper dome; 102-lower dome; 103-wafer; 104-inner liner; 1041-upper inner liner; 1042-lower inner liner; 105-preheating ring; 106-side wall; 107-upper flange; 108-lower flange; 109-inlet; 110-outlet; 111-base; 10421-first mounting hole; 10422-second mounting hole; 201-piezoelectric module; 202-signal collection and analysis unit; 2021-charge amplifier; 2022-computer system; 203-pressure transmission module; 204-seal; 205-connection line; 2011-mass unit; 2012-upper electrode; 2013-piezoelectric structure; 2014-lower electrode; 20111-groove; 206-bushing; 207-fixing member; 208-fixing flange. DETAILED DESCRIPTION

[0019] The following will be described in combination with the drawings Figures 1-5The semiconductor apparatus capable of detecting the preheating ring fracture state according to the present application is further described in detail in conjunction with the specific embodiments. The advantages and features of the present application will be more apparent from the following description. It should be noted that the drawings are very simplified and all use non-precise proportions, only for the purpose of facilitating, clear and assisting the description of the embodiments of the present application. In order to make the purposes, features and advantages of the present application more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to the present specification are only used to cooperate with the content disclosed in the specification, for the understanding and reading of those skilled in the art, and are not used to define the limiting conditions for the implementation of the present application, so they do not have technical substantial significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0020] Reference Figure 1As shown, the embodiment provides a semiconductor device capable of detecting the preheating ring fracture state, and further taking the semiconductor epitaxial device as an example. The semiconductor device comprises a cavity 100, a base 111, a preheating ring 105, a piezoelectric charge excitation unit and a signal collection and analysis unit 202. The cavity 100 comprises an upper dome 101, an inner liner 104, a lower dome 102, a side wall 106, an upper flange 107 and a lower flange 108 arranged in sequence. The side wall 106 is arranged outside the inner liner 104 and opposite to the inside of the cavity 100. The side wall 106, the upper flange 107 and the lower flange 108 are all substantially annular. The upper dome 101 is an upper convex circular shape, and the lower dome 102 is a funnel shape. The upper dome 101 and the lower dome 102 are both transparent quartz materials. The upper dome 101 is fixed above the side wall 106 through the upper flange 107, and the lower dome 102 is fixed below the side wall 106 through the lower flange 108. The inner liner 104 is arranged on the inner surface of the side wall 106. The inner liner 104 comprises an upper inner liner 1041 and a lower inner liner 1042. The upper inner liner 1041 is located between the upper dome 101 and the base 111, and the lower inner liner 1042 is located between the lower dome 102 and the base 111. The base 111 is arranged in the cavity 100 and used for carrying a wafer 103. The preheating ring 105 is arranged around the outer periphery of the base 111, i.e. around the base 111. One side of the cavity 100 is provided with an air inlet 109, and the other side is provided with an air outlet 110 opposite to the air inlet 109. Process gas is introduced into the cavity 100 through the air inlet 109, and the process gas is discharged out of the cavity 100 after the process through the air outlet 110. The piezoelectric charge excitation unit is built in the inner liner 104 and located below the preheating ring 105, used for detecting the pressure change of the preheating ring 105 and generating corresponding charge signals. When the preheating ring 105 is subjected to thermal stress or other mechanical action during the epitaxial process, the piezoelectric charge excitation unit can capture the tiny mechanical deformation and convert these changes into variable frequency charge signals. These charge signals are then transmitted to the signal collection and analysis unit 202 for processing. The signal collection and analysis unit 202 is electrically connected with the piezoelectric charge excitation unit, used for receiving and processing the charge signals, and judging the fracture state of the preheating ring 105 according to the processed charge signals. The cavity 100 in the application refers to a process cavity.

[0021] Specifically, referring to Figure 2As shown, the piezoelectric charge excitation unit comprises: a piezoelectric module 201 and a pressure conduction module 203; wherein the pressure conduction module 203 is in direct contact with the lower surface of the preheating ring 105, for conducting the mechanical deformation of the preheating ring 105 under thermal stress or other mechanical action in the epitaxial process to the piezoelectric module 201, the piezoelectric module 201 is provided with a groove 20111 structure matched with the lower end of the pressure conduction module 203, the piezoelectric module 201 is used for indirectly sensing the pressure change of the preheating ring 105 and generating an electric charge signal, and the piezoelectric module 201 is electrically connected with the signal collection and analysis unit 202 through a connecting line 205; the upper end of the pressure conduction module 203 supports the preheating ring 105, and the lower end of the pressure conduction module 203 is in contact with the piezoelectric module 201, for conducting the pressure change of the preheating ring 105.

[0022] With reference to the foregoing Figure 2 As shown, in the embodiment, the pressure conduction module 203 is a force pin, which comprises an upper end and a rod portion extending axially from the upper end, and the lower end of the rod portion away from the upper end is a sharp structure, and the outer contour of the upper end away from the rod portion is generally an arc-shaped curved surface, for example, a part of a spherical surface, an elliptical curved surface or other smooth convex curved surface. The upper end of the force pin has an engaging surface, and the force pin is in contact with the preheating ring 105 through the engaging surface. The engaging surface of the force pin is provided with a rough engaging area, specifically, the force pin is in contact with the lower surface of the preheating ring 105 through the rough engaging area. The roughness RA of the rough engaging area is 0.5um, which can effectively prevent the self-sliding inclination and rotation of the preheating ring 105, and the rough engaging area of the pressure conduction module 203 is formed by polishing treatment.

[0023] Further, the upper end of the pressure conduction module 203 (force pin) is also provided with a lower surface facing the rod portion, the pressure conduction module 203 extends downward and is located in the second mounting hole 10422 of the inner liner 104, the lower surface of the upper end forms a matching gap with the surface opposite to the inner liner 104, and the matching gap is in a set range, which is configured to avoid the vibration of the pressure conduction module caused by non-preheating ring and ensure the conduction of the pressure conduction module to the pressure change of the preheating ring.

[0024] Further, the lower end of the rod portion of the pressure conduction module 203 (force pin) away from the upper end is a sharp structure, which is in contact with the piezoelectric module 201 located directly below the pressure conduction module 203, for conducting the pressure of the preheating ring 105 to the piezoelectric module 201.

[0025] Further, the force-bearing pin is made of quartz, and specifically, an upper end portion (an upper convex arc-shaped surface) of the force-bearing pin is provided with a flat joint surface, the flat joint surface has a certain roughness, the flat joint surface is used to disperse stress and prevent the preheating ring 105 from being broken, the force-bearing pin is provided with a certain roughness on the joint surface to prevent the preheating ring 105 from slipping when the preheating ring 105 contacts the force-bearing pin. The lower end portion of the force-bearing pin is provided with a sharp structure, the sharp structure can concentrate stress and strengthen piezoelectric response, and effectively conduct the pressure of the preheating ring 105 to the piezoelectric module 201.

[0026] Reference Figure 3 and Figure 4 As shown in FIGS. 1 to 3, the piezoelectric module 201 includes a mass unit 2011, a piezoelectric structure 2013, and an electrode assembly. The mass unit 2011 provides a preloaded stress for the piezoelectric structure 2013, so that the pressure on the piezoelectric structure 2013 is in an appropriate pressure range when the preheating ring 105 is not broken or deviated, and the change of the pressure on the piezoelectric structure 2013 is facilitated to be detected. The mass unit 2011 is a sleeve structure arranged radially along the base 111, a cross-sectional view of the sleeve structure is a rectangle, one end of the sleeve structure is a closed portion, and the other end opposite to the closed portion is an open portion, the closed portion of the mass unit 2011 is provided with a receiving cavity, and a surface of the mass unit 2011 facing the pressure conducting module 203 is provided with a groove 20111, the groove 20111 is configured to be matched with the lower end portion of the pressure conducting module 203 (refer to the sharp structure of the pressure conducting module 203 in FIG. 4), and the receiving cavity is located below the groove 20111. Figure 2

[0027] ​The piezoelectric structure 2013 is arranged in the accommodating cavity of the mass unit 2011, and is used for sensing the pressure change of the preheating ring 105 and converting into an electric charge signal; in the embodiment, the piezoelectric structure 2013 adopts any one of PbTiO3, quartz, PbZrO3 and Pb(Zr,Ti)O3, and preferably, the piezoelectric structure 2013 adopts PbTiO3 material with strong piezoelectric response, so as to have sufficient piezoelectric effect to sense the slight pressure change. The electrode assembly is arranged on the surface of the piezoelectric structure 2013, the electrode assembly is connected with the signal collection and analysis unit 202 through the connecting line 205, the electrode assembly includes an upper electrode 2012 and a lower electrode 2014, and the upper electrode 2012 and the lower electrode 2014 are arranged on the upper surface and the lower surface opposite to the upper surface of the piezoelectric structure 2013 towards the pressure conducting module. In the embodiment, the upper electrode 2012 and the lower electrode 2014 are both made of copper material, so as to ensure good conductivity; the electrode assembly is connected with the signal collection and analysis unit 202 through the connecting line 205, and the connecting line 205 is led out from the side surface of the piezoelectric structure 2013, so as to avoid interference with the piezoelectric response.

[0028] In the application, the mass unit 2011 and the piezoelectric structure 2013 of the piezoelectric module are formed into a component unit convenient to disassemble. In the process of installing the piezoelectric charge exciting unit in the inner liner 104, the fixing member 207 is also involved, and the specific process is as follows: In the process of installing the preheating ring 105 fracture detection device, the piezoelectric structure 2013 and the electrode assembly arranged on the upper and lower surfaces of the piezoelectric structure 2013 are first installed into the accommodating cavity of the mass unit 2011, and the piezoelectric structure 2013 and the electrode assembly are tightly matched with the accommodating cavity. The bushing 206 is installed on the opening part of the mass unit 2011, and the bushing 206 is interference-fitted with the inner surface of the opening part. The fixing member 207 is provided with a channel for placing the connecting line 205 along the radial direction of the base 111, the connecting line 205 is passed through the channel of the fixing member 207, and the first end of the connecting line 205 is connected with the piezoelectric structure 2013, and the second end of the connecting line 205 is connected with the signal collection and analysis unit 202 outside the cavity 100. The fixing member 207 is threadedly connected with the inner surface of the bushing 206 (i.e. the surface of the bushing 206 towards the fixing member 207). Further, the fixing member 207 is a bolt-like structure. The structure cooperation of the opening part of the mass unit 2011 and the bushing 206 and the fixing member 207 realizes the sealing of the combination surface of the mass unit 2011 and the side wall 106, and further realizes the vacuum sealing of the cavity 100. In addition, the sealing member 204 is arranged at the junction of the inner liner 104 and the side wall 106, and further guarantees the realization of the vacuum sealing of the cavity 100.

[0029] Further, in order to facilitate subsequent disassembly and maintenance of each part of the cavity, the opening part of the mass unit 2011 protrudes from the first through hole of the side wall 106, and the protruding part of the mass unit 2011 facilitates the disassembly of the mass unit 2011 from the inner liner 104 and the side wall 106 during the cavity maintenance process. The fixing member 207 is fixed inside the opening part, that is, the fixing member 207 is threadedly connected with the surface of the opening part facing the fixing member 207; the fixing member 207 includes a head part and a connecting segment integrally formed with each other, the connecting segment extends to the inside of the opening part, and the head part abuts against the port of the opening part. The fixing member 207 can fine-tune the position of the mass unit 2011 in the first mounting hole 10421, facilitating the alignment of the pressure conduction module 203 with the groove 20111 of the mass unit 2011 during the subsequent installation process.

[0030] Further, the opening part of the mass unit 2011 is also provided with a fixing flange 208, which fixes the mass unit 2011 to the side wall 106 of the cavity 100.

[0031] The piezoelectric charge excitation units are arranged in a plurality of numbers and are arranged in a central symmetric manner about the center of the preheating ring 105 below the preheating ring 105. Preferably, the number of piezoelectric charge excitation units is three, and the piezoelectric charge excitation units are arranged in the lower inner liner 1042. In another embodiment, the piezoelectric charge excitation units are arranged in four numbers, and the positions of the four pressure conduction modules 203 are shown in Figure 5 , the ends of the four pressure conduction modules 203 are one-to-one correspondingly provided with a piezoelectric module 201 (the piezoelectric module 201 Figure 5 is not shown in Figure 2 , and the piezoelectric module 201 and the pressure conduction module 203 are correspondingly arranged in

[0032] Reference is made to Figure 2As shown, the lower inner liner 1042 and the sidewall 106 each has a first mounting hole 10421 and a first through hole 1061 extending radially along the base 111 and communicating with each other, the mass unit 2011 is arranged in the first mounting hole 10421 and the first through hole 1061, the accommodating cavity of the mass unit 2011 is arranged in the first mounting hole 10421 of the lower inner liner 1042, the opening part of the mass unit 2011 is arranged in the first through hole of the sidewall 106, the first end of the connecting wire 205 is connected with the piezoelectric structure 2013, the second end of the connecting wire 205 extends to the outside of the cavity 100 through the first mounting hole 10421 and the first through hole 1061 in sequence and is connected with the signal collection and analysis unit 202. The lower inner liner 1042 is further provided with a second mounting hole 10422, the central axis of the second mounting hole 10422 forms an angle of 0-60° with the central axis of the cavity 100, the second mounting hole 10422 communicates with the first mounting hole 10421, the second mounting hole 10422 is used for accommodating the pressure conduction module 203, and the upper end part of the pressure conduction module 203 protrudes out of the second mounting hole 10422. The pressure conduction module 203 has a matching gap with the second mounting hole 10422, the matching gap is in a set range, the set range is configured to avoid vibration of the pressure conduction module 203 caused by the preheating ring 105 (such as vibration of the cavity 100 or disturbance caused by gas flow) and ensure conduction of the pressure conduction module 203 to pressure change of the preheating ring 105. In the embodiment, the second mounting hole 10422 is arranged in the vertical direction, that is, the angle between the axis of the second mounting hole 10422 and the central axis of the cavity 100 is 0°. In actual use, the angle between the second mounting hole 10422 and the central axis of the cavity 100 can be adjusted in the range of 0-60° according to the specific structure of the lower inner liner 1042, so as to balance the pressure conduction efficiency and installation compatibility.

[0033] Specifically, with continued reference to Figure 2 As shown, the first mounting hole 10421 is a blind hole, one end of the first mounting hole 10421 close to the base 111 is closed (to prevent process gas in the cavity 100 from leaking to the first mounting hole 10421 and to isolate the piezoelectric charge excitation unit from the cavity 100, so as to ensure the stability of the operation environment of the piezoelectric charge excitation unit), the other end of the first mounting hole 10421 away from the base 111 is provided with a sealing member 204, and the sealing member 204 is located at the junction of the first mounting hole 10421 and the first through hole 1061. In the embodiment, the sealing member 204 is made of polytetrafluoroethylene material.

[0034] With continued reference to Figure 1As shown, the signal collection and analysis unit 202 comprises a charge amplifier 2021 connected with the piezoelectric module 201 through a connecting line 205 for receiving the charge signal and amplifying and filtering the charge signal to remove noise interference and obtain the processed charge signal, and a computer system 2022 connected with the charge amplifier 2021 for receiving the processed charge signal and analyzing to determine the fracture state of the preheating ring 105. When the computer system 2022 determines that the preheating ring 105 is fractured or has an abnormality other than fracture, an alarm signal is sent to notify the operator to take timely repair measures.

[0035] The semiconductor device provided by the embodiment can detect the fracture state of the preheating ring. When the preheating ring 105 is in a perfect and central state, the piezoelectric charge excitation unit is subjected to uniform and stable pressure, and in this case, the piezoelectric charge excitation unit does not generate significant charge signals. When the preheating ring 105 is fractured, the stress on the piezoelectric charge excitation unit will change significantly. Specifically, the piezoelectric charge excitation unit subjected to increased pressure will generate high-frequency charge signals, and the piezoelectric charge excitation unit subjected to reduced pressure will generate low-frequency charge signals. These charge signals are then captured by the charge amplifier 2021 in the signal collection and analysis unit 202 and transmitted to the computer system 2022 for analysis and processing. The computer system 2022 determines whether the preheating ring 105 is abnormal according to the analysis result and sends an alarm signal in time so that the operator can take repair measures. The semiconductor device in the embodiment realizes real-time and non-invasive detection of the fracture state of the preheating ring 105, avoids the delay and risk of traditional manual inspection, and improves the reliability and maintenance efficiency of the semiconductor device. Compared with the traditional semiconductor device which relies on manual inspection or mechanical sensors to check the fracture state of the preheating ring 105, the embodiment provides a faster and more accurate fault warning function. The piezoelectric charge excitation unit can generate characteristic frequency charge signals in an instant when the stress state changes. The charge excitation process does not require power consumption, saving detection costs and avoiding detection failure due to power failure of the device.

[0036] It is to be understood that the terminology used herein such as first and second, and the like, is only intended to distinguish one entity or action from another entity or action, without necessarily requiring or implying any such actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the presence of additional identical elements in the process, method, article, or apparatus that comprises the element.

[0037] In the description of the application, it is to be understood that the orientation or positional relationship indicated by the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application. In the description of the application, the meaning of "a plurality of" is two or more, unless otherwise specified and limited.

[0038] In the description of the application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting", "fixing" should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium; can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0039] In the present application, unless otherwise explicitly specified and limited, "on" or "under" of the first feature to the second feature can include that the first and second features are in direct contact, or can include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "above" of the first feature to the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. "Below", "below" and "below" of the first feature to the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0040] While the application has been described in detail by reference to preferred embodiments thereof, it should be recognized that the description set forth herein is by way of example and that modifications of the procedures described can be employed without departing from the scope of the application. Accordingly, the scope of the application should be determined by the appended claims and equivalents thereof.

Claims

1. A semiconductor device capable of detecting the fracture state of a preheating ring, characterized in that, include: A cavity, the cavity comprising an upper dome, an inner liner, and a lower dome arranged sequentially; A base, disposed within the cavity, is used to support the wafer; A preheating ring surrounds the outer periphery of the base; A piezoelectric charge excitation unit, which is built into the liner and located below the preheating ring, is used to detect the pressure change of the preheating ring and generate a corresponding charge signal; The signal collection and analysis unit is electrically connected to the piezoelectric charge excitation unit and is used to receive and process the charge signal, and to determine the fracture state of the preheating ring based on the processed charge signal.

2. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 1, characterized in that, The piezoelectric charge excitation unit includes: A piezoelectric module is used to sense pressure changes and generate the charge signal. The piezoelectric module is electrically connected to the signal collection and analysis unit via a connecting wire. The pressure transmission module has an upper end that supports the preheating ring and a lower end that contacts the piezoelectric module, and is used to transmit pressure changes in the preheating ring.

3. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 2, characterized in that, The pressure transmission module is a force-bearing pin; the force-bearing pin includes an upper end and a rod extending axially from the upper end, and the lower end of the rod away from the upper end has a pointed structure; The upper end of the force-bearing pin has a mating surface, through which the force-bearing pin contacts the preheating ring; the pointed structure at the lower end of the force-bearing pin is used to conduct the pressure of the preheating ring to the piezoelectric module.

4. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 2, characterized in that, The piezoelectric module comprises a component unit formed by a mass element, a piezoelectric structural element, and an electrode assembly. The mass unit is a sleeve structure arranged radially along the base. One end of the sleeve structure is a closed part, and the other end opposite to the closed part is an open part. The closed part of the mass unit is provided with a receiving cavity. The surface of the mass unit facing the pressure transmission module has a groove, which is configured to cooperate with the lower end of the pressure transmission module. The receiving cavity is located below the groove. A piezoelectric structural component is disposed within the accommodating cavity of the mass unit, used to sense pressure changes in the preheating ring and convert them into charge signals; An electrode assembly is disposed on the surface of the piezoelectric structure and connected to the signal collection and analysis unit via a connecting line. The electrode assembly includes an upper electrode and a lower electrode, which are respectively disposed on the upper surface of the piezoelectric structure facing the pressure transmission module and the lower surface opposite to the upper surface.

5. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 4, characterized in that, The lining includes an upper lining and a lower lining, the upper lining being located between the upper dome and the base, and the lower lining being located between the lower dome and the base; The piezoelectric charge excitation unit is disposed in the lower inner liner; The liner has a sidewall on the outside that is opposite to the inside of the cavity; The lower liner and the sidewall each have a first mounting hole and a first through hole that extend radially along the base and communicate with each other. The mass unit is disposed in the first mounting hole and the first through hole that communicate with each other. The receiving cavity of the mass unit is disposed in the first mounting hole of the lower liner. The opening of the mass unit is disposed in the first through hole of the sidewall. The first end of the connecting wire is connected to the piezoelectric structure. The second end of the connecting wire passes through the first mounting hole and the first through hole in sequence and extends to the outside of the cavity to connect with the signal collection and analysis unit. The lower liner is also provided with a second mounting hole. The central axis of the second mounting hole forms an angle of 0 to 60° with the central axis of the cavity. The second mounting hole communicates with the first mounting hole. The second mounting hole is used to accommodate the pressure transmission module, and the upper end of the pressure transmission module protrudes from the second mounting hole.

6. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 5, characterized in that, The opening of the mass unit protrudes from the first through hole in the sidewall, and the opening has a built-in fastener; the fastener includes a head and a connecting segment connected to each other, the connecting segment extending into the interior of the opening, and the head abutting against the port of the opening.

7. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 6, characterized in that, A bushing is provided between the inner surface of the opening and the fixing member. The bushing is interference-fitted with the inner surface of the opening. The fixing member is threadedly connected to the inner surface of the bushing. The fixing member is provided with a channel for placing the connecting wire.

8. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 7, characterized in that, The pressure transmission module has a mating gap with the second mounting hole. The mating gap is within a set range. The set range is configured to avoid vibration of the pressure transmission module caused by factors other than the preheating ring, and to ensure that the pressure transmission module transmits pressure changes of the preheating ring.

9. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 8, characterized in that, The first mounting hole is a blind hole, with its end near the base closed, and a sealing element is provided at the end of the first mounting hole away from the base. The sealing element is located at the junction of the first mounting hole and the first through hole.

10. The semiconductor device for detecting the fracture state of the preheating ring as described in claim 9, characterized in that, Multiple piezoelectric charge excitation units are provided, and the multiple piezoelectric charge excitation units are arranged in a centrally symmetrical manner about the center of the preheating ring.

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