Method and system for automatically calibrating zero drift of thin film gauge and semiconductor manufacturing equipment

Abstract

The invention belongs to the technical field of semiconductor preparation, and provides a method and system for automatically calibrating zero drift of a film gauge and semiconductor manufacturing equipment, and the method comprises the steps: obtaining a pre-process zero point reading value when the film gauge is reset to a zero point under the bottom pressure state of a process chamber before the process; after the technological process is completed, a post-technological reading value of the film gauge is obtained under the bottom pressure state of the technological chamber; judging whether a first offset rate of the post-process reading value relative to the pre-process zero point reading value is smaller than a first offset rate threshold value or not; if so, continuing the next process; if not, resetting the film gauge to a zero point to obtain a post-process zero point reading value; judging whether a second offset rate of the post-process zero point reading value relative to the pre-process zero point reading value is smaller than a second offset rate threshold value or not; if so, continuing the next technological process; and if not, returning to the step of resetting the film gauge to the zero point to obtain the zero point reading after the process. The zero calibration precision can be improved at low cost.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor fabrication technology, and relates to an automatic calibration method, system, and semiconductor manufacturing equipment for thin film gauge zero-point drift. Background Technology

[0002] Thin film deposition equipment constitutes a significant portion of semiconductor fabrication equipment. Thin film deposition is typically performed within a vacuum chamber. First, the chamber is evacuated to a low pressure, then filled with a process gas at a certain pressure to generate plasma or to react directly with the substrate. Measuring the chamber pressure is crucial during the process; a thin film gauge is typically used to measure the process pressure throughout the entire process, which generally ranges from a few tenths of a millimeter to tens of millimeters per second (mTorr).

[0003] Due to environmental influences, diaphragm gauges are prone to zero drift. After a period of use, the measured pressure may deviate from the actual pressure. Therefore, after a period of use, the diaphragm gauge needs to be zeroed.

[0004] In the prior art, thin-film gauges are mechanically calibrated using special tools, and the timing of calibration requires a standard gauge of the same specification. Specifically: An isolation valve is installed between the standard gauge and the cavity. During the process, if the pressure inside the cavity is higher than the process pressure, the isolation valve closes to protect the standard gauge, mitigate the impact of excessive pressure on the standard gauge, and extend the time before the standard gauge drifts. When the absolute value of the pressure difference measured by the diaphragm gauge and the standard gauge exceeds a preset pressure difference threshold, the diaphragm gauge needs to be calibrated.

[0005] Existing membrane gauge calibration techniques require an additional membrane gauge of the same specification as a standard gauge, with an isolation valve for protection. Furthermore, special tools are needed for mechanical calibration and zeroing of the membrane gauge. Even membrane gauges of the same specification have inherent errors, and the standard gauge can drift, thus reducing zero-point calibration accuracy. Additionally, the standard gauge, isolation valve, and special tools all increase calibration costs.

[0006] Therefore, the need to improve zero-point calibration accuracy at low cost is an important issue that the industry urgently needs to address. Summary of the Invention

[0007] In view of the above problems, the purpose of the embodiments of the present invention is to provide an automatic calibration method, system and semiconductor manufacturing equipment for zero-point drift of thin film gauges.

[0008] According to a first aspect of the present invention, an automatic calibration method for zero-point drift of a thin film gauge is provided, comprising: Zeroing step before process: Before the process, under the low pressure state of the process chamber corresponding to the film gauge, reset the film gauge to zero point and obtain the zero point reading value as the zero point reading value before process. Post-process reading acquisition steps: After the process is completed, under the low pressure state of the process chamber, obtain the reading of the thin film gauge as the post-process reading; First offset rate judgment step: Determine whether the first offset rate of the post-process reading relative to the pre-process zero-point reading is less than the first offset rate threshold: If the first offset rate is less than the first offset rate threshold, it is determined that the film gauge has not experienced zero-point drift, the film gauge does not need to be reset again, and the next process can be continued directly; If the first offset rate is not less than the first offset rate threshold, it is determined that the film gauge has experienced zero-point drift, and the post-process zeroing step is executed. Post-process zeroing step: Under the low pressure state of the process chamber after the process is completed, reset the diaphragm gauge to zero point and obtain the zero point reading, which is used as the post-process zero point reading. Second offset rate judgment step: Determine whether the second offset rate of the zero-point reading after the process relative to the zero-point reading before the process is less than the second offset rate threshold; if the second offset rate is less than the second offset rate threshold, continue to the next process, and the zero-point reference of the thin film gauge is the zero-point reading after the process; if the second offset rate is not less than the second offset rate threshold, return to the zero adjustment step after the process.

[0009] In one possible implementation, the second offset rate determination step further includes: If the second offset rate is not less than the second offset rate threshold, maintain at low pressure, repeat the zeroing step and the second offset rate judgment step after the process. If the number of consecutive times the second offset rate is not less than the second offset rate threshold reaches the threshold, check if the film gauge is damaged and if it needs to be replaced. If the film gauge is replaced, return to the zeroing step before the process. If the number of consecutive times the second offset rate is not less than the second offset rate threshold does not reach the threshold, return to the zeroing step after the process. If there are times when the second offset rate is less than the second offset rate threshold during the process where the number of consecutive times does not reach the threshold, use the zero-point reading after the process corresponding to the number of times as the zero-point reference of the film gauge and continue to the next process.

[0010] In one possible implementation, the threshold number of times is 3-5 times.

[0011] In one possible implementation, the automatic calibration method for thin film gauge zero-point drift further includes a pre-process vacuuming step, which includes: Before the process begins, the process chamber is evacuated to a low pressure.

[0012] In one possible implementation, the automatic calibration method for thin film gauge zero-point drift further includes a post-process vacuuming step, which includes: After the process, the process chamber is evacuated to a low pressure.

[0013] In one possible implementation, the pre-process vacuuming step and / or post-process vacuuming step includes: evacuating the process chamber corresponding to the thin film gauge to a low pressure under the monitoring of an ion gauge.

[0014] In one possible implementation, the bottom pressure is less than 1 × 10⁻⁶. -6 Entrust.

[0015] In one possible implementation, the first offset rate threshold is determined based on the process accuracy, and the second offset rate threshold is determined based on the measurement accuracy of the thin film gauge.

[0016] In one possible implementation, the second offset rate threshold is less than the first offset rate threshold.

[0017] According to a second aspect of the present invention, an automatic calibration system for thin film gauge zero-point drift is provided, comprising a reset module and a decision module: The reset module is configured to reset the thin film gauge to zero. The decision module is configured to obtain the pre-process zero-point reading of the film gauge after the reset module resets it under low-pressure conditions in the process chamber before the process, and the post-process reading of the film gauge under low-pressure conditions in the process chamber after the process; determine whether a first offset rate of the post-process reading relative to the pre-process zero-point reading is less than a first offset rate threshold; if the first offset rate is less than the first offset rate threshold, issue a first decision signal to continue executing the next process; if the first offset rate is not less than the first offset rate threshold, issue a second decision signal to reset the film gauge to the reset module; obtain the post-process zero-point reading of the film gauge after the reset module receives the second decision signal and resets it under low-pressure conditions after the process; determine whether a second offset rate of the post-process zero-point reading relative to the pre-process zero-point reading is less than a second offset rate threshold; if the second offset rate is less than the second offset rate threshold, issue the first decision signal; if the second offset rate is not less than the second offset rate threshold, send the second decision signal to the reset module.

[0018] In one possible implementation, the automatic calibration thin film gauge zero-point drift system further includes a counting module configured to count the number of times the decision module continuously issues a second decision signal, and generate a count signal to send to the decision module. The decision module is further configured to determine whether the number of times the second decision signal is continuously issued in the count signal received by the counting module reaches a count threshold. If the count threshold is reached, a third decision signal for checking the membrane gauge is issued; if the count threshold is not reached, a second decision signal is issued to the reset module.

[0019] In one possible implementation, the automatic calibration thin film gauge zero-point drift system further includes a vacuum module configured to evacuate the process chamber to a low pressure.

[0020] According to a third aspect of the present invention, a semiconductor manufacturing apparatus is provided, comprising a process chamber, a thin film gauge, an ion gauge, and the aforementioned automatic calibration thin film gauge zero-point drift system: The thin film gauge and the ion gauge are respectively connected to the process chamber, and the ion gauge is configured to monitor the bottom pressure of the process chamber.

[0021] This invention solves the problem of calibrating and zeroing thin film gauges by adopting a software calibration and zeroing method, saving an additional set of standard gauges and mechanical zeroing tools, realizing software calibration and zeroing of thin film gauges, saving costs, shortening calibration time, and improving work efficiency. Attached Figure Description

[0022] Figure 1 This is a flowchart illustrating an embodiment of the automatic calibration method for zero-point drift of thin film gauges described in this invention; Figure 2 This is a flowchart illustrating another embodiment of the automatic calibration method for zero-point drift of thin film gauges described in this invention; Figure 3 This is a flowchart illustrating a preferred embodiment of the automatic calibration method for zero-point drift of thin film gauges according to the present invention; Figure 4 This is a schematic block diagram of one embodiment of the automatic calibration thin film gauge zero-point drift system described in this invention; Figure 5 This is a schematic block diagram of one embodiment of the semiconductor manufacturing equipment described in this invention; Figure 6 This is a schematic diagram of an application scenario of the automatic calibration thin film gauge zero-point drift system described in this invention; Figure 7 This is a schematic diagram of another application scenario of the automatic calibration thin film gauge zero-point drift system described in this invention; The components include: 1. Semiconductor manufacturing equipment; 10. Automatic calibration thin film gauge zero-point drift system; 11. Vacuum module; 12. Reset module; 13. Decision module; 14. Counting module; 20. Process chamber; 30. Thin film gauge; 40. Ion gauge; 100. Computing device; 101. Low pressure; 102. Pre-process zero-point reading; 103. Post-process reading; 104. First offset rate; 105. Post-process zero-point reading; 106. Second offset rate; 107. Execute the next process; 108. Check thin film gauge; 110. Memory; 120. Processor; 130. Bus; 140. Access device; 150. Database; 160. Network. Detailed Implementation

[0023] Numerous specific details are set forth in the following description to provide a full understanding of the invention. However, the invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0024] The terminology used in one or more embodiments of the present invention is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. The singular forms “a” and “the” as used in one or more embodiments of the invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in one or more embodiments of the invention refers to and includes any or all possible combinations of one or more associated listed items.

[0025] It should be understood that although the terms first, second, etc., may be used to describe various information in one or more embodiments of the present invention, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, first may also be referred to as second without departing from the scope of one or more embodiments of the present invention, and similarly, second may also be referred to as first.

[0026] Hereinafter, one or more embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can clearly and completely understand the present invention. When the description of well-known structures or features would unnecessarily obscure the main points of the present invention, the description of such well-known structures or features will be omitted.

[0027] Existing technologies for zero-point calibration of diaphragm gauges rely on mechanical operation: requiring manual intervention and special tools, resulting in low efficiency and susceptibility to human error; they also require standard gauges: a standard gauge of the same specification must be used as a reference, increasing equipment cost and maintenance complexity; they suffer from poor real-time performance: calibration is only triggered when the pressure difference exceeds a threshold, failing to dynamically compensate for drift and potentially affecting process stability; and their protection mechanisms are limited: isolation valves can only delay the wear and tear of the standard gauge, failing to address long-term drift issues. Existing technologies achieve zeroing through mechanical calibration and comparison with standard gauges, but these methods suffer from drawbacks such as cumbersome operation, high cost, and delayed response.

[0028] To address the aforementioned technical problems in the zero-point calibration of thin film gauges in existing technologies, this invention provides an automatic method for calibrating the zero-point drift of thin film gauges, such as... Figure 1 As shown, it includes: Step S2: Before the process, under the low-pressure state of the process chamber corresponding to the film gauge, reset the film gauge to zero and obtain the zero-point reading, which is used as the zero-point reading before the process. ; Step S3, perform the process, for example, physical vapor deposition: Step S5: After completing the process, under low pressure in the process chamber, obtain the reading of the thin film gauge as the post-process reading. ; Step S6: Obtain the first offset rate of the post-process reading relative to the pre-process zero-point reading. ; Step S7, determine the first offset rate Is it less than the first offset threshold? : If the first offset rate is less than the first offset rate threshold, it is determined that the film gauge has not experienced zero-point drift, and the process returns to step S3 to continue the next process. In other words, the film gauge does not need to be reset again, and the next process is executed directly. If the first offset rate is not less than the first offset rate threshold, it is determined that the thin film gauge has zero-point drift, and step S8 is executed; Step S8: Under the low-pressure state of the process chamber after the process is completed, reset the thin film gauge to zero and obtain the zero-point reading, which will be used as the zero-point reading after the process. ; Step S9: Obtain the second offset rate of the zero-point reading after the process relative to the zero-point reading before the process. ; Step S10, determine the second offset rate Is it less than the second offset rate threshold? ; If the second offset rate is less than the second offset rate threshold, return to step S3 and continue to the next process. At this time, the reading corresponding to the zero point of the thin film gauge (zeroing reference) is the zero point reading after the process. In other words, In step S6, the first offset rate is If step S9 is reached, the second offset rate is... ,in, This is the post-process zero-point reading after the second process is completed and the process chamber is under low pressure. If the second offset rate is not less than the second offset rate threshold, return to step S8.

[0029] In the above embodiments, the membrane gauge can be reset to zero using either a hard reset or a soft reset. A hard reset refers to a zero-point reset triggered by an external hardware signal, such as a hard reset via a reset button. A soft reset refers to a zero-point reset triggered by a software command or control register.

[0030] The automatic calibration method for zero-point drift of thin-film gauges described in this invention eliminates reliance on mechanical operation: Existing technologies require the use of standard gauges for comparison, while the automatic calibration of this invention uses software to control the zeroing process, eliminating the need for manual intervention and avoiding mechanical wear and operational offset rates. This invention does not require standard gauge assistance: Traditional methods require high-precision standard gauges as a reference, while the automatic calibration of this invention directly determines the drift amount by comparing readings under multiple low-pressure conditions before and after the process (post-process reading and pre-process zero-point reading, one or more post-process zero-point readings and pre-process zero-point readings), eliminating the need for external standard equipment. This invention improves real-time performance: Existing technologies only trigger calibration when the pressure difference exceeds a threshold, while the automatic calibration of this invention dynamically detects the offset rate before and after each process (such as judging the first / second offset rate threshold), achieving real-time compensation and avoiding the cumulative effect of drift on process accuracy. This invention enhances reliability: Through thin-film gauge reset and offset rate verification, the accuracy of the zeroing reference is ensured, avoiding random offset rates that may be introduced by a single calibration. This invention solves the problems of cumbersome mechanical operation, reliance on external equipment, and slow response in the prior art through a software-based and dynamic calibration process, and is suitable for high-precision semiconductor process scenarios.

[0031] This invention ensures the measurement accuracy of the thin film gauge by comparing the post-process reading with the pre-process zero-point reading, and by comparing the post-process zero-point reading with the pre-process zero-point reading, while reducing the number of times the thin film gauge needs to be reset (it does not need to be reset before each process), thus improving the lifespan of the thin film gauge.

[0032] In one feasible embodiment, the automatic calibration method for zero-point drift of thin film gauge further includes step S1: before the process, evacuate the process chamber corresponding to the thin film gauge to a low pressure. Preferably, step S4 includes: Under the monitoring of the ion gauge, the process chamber corresponding to the thin film gauge is evacuated to low pressure.

[0033] Step S1 above is a process that combines continuous vacuuming and intermittent vacuuming before the process, so that the process chamber is maintained at a low pressure before the process.

[0034] In one feasible embodiment, the automatic calibration method for thin film gauge zero-point drift further includes step S4: After the process, the process chamber corresponding to the thin film gauge is evacuated to low pressure; Preferably, step S4 includes: Under the monitoring of the ion gauge, the process chamber corresponding to the thin film gauge is evacuated to low pressure.

[0035] Step S4 above is a process that combines continuous and intermittent vacuuming after the process, so that the process chamber maintains a low pressure state after the process.

[0036] In a preferred embodiment, the bottom pressure is less than 1×10⁻⁶. -6 Entrust.

[0037] In one feasible embodiment, the first offset rate threshold in step S7 is determined based on process accuracy.

[0038] In one feasible embodiment, the second offset rate threshold in step S10 is determined based on the measurement accuracy of the thin film gauge.

[0039] In one feasible embodiment, the second offset rate threshold is less than the first offset rate threshold.

[0040] In a preferred embodiment, the second offset rate threshold b% is 0.3% and the first offset rate threshold a% is 3%.

[0041] This invention achieves zero-point drift detection and calibration solely through the conventional operation of evacuating the process chamber to low pressure before and after the process, combined with the resetting of the thin-film gauge and the determination of the offset rate. Zero-point calibration is performed without significantly increasing hardware costs. The offset rate determination allows for a more precise determination of whether the thin-film gauge has experienced zero-point drift and the degree of drift. Before the process, the thin-film gauge is reset to obtain an initial reference reading. After the process, vacuum is evacuated again, and the zero-point reading before the process is compared to determine the first offset rate. If it exceeds a threshold, the gauge is reset again. Then, a second offset rate is determined relative to the zero-point reading before the process. The second offset rate threshold is lower than the first offset rate threshold. This tiered determination method makes calibration more precise and effectively improves the accuracy of drift calibration. Performing vacuuming and resetting zero-point operations before and after each process allows for real-time monitoring of the zero-point status of the thin-film gauge. Once zero-point drift occurs, timely calibration and adjustment are performed, and the zero-point reading after the process is used as the new zeroing reference to continue the subsequent process. This ensures the accuracy of thin film gauge measurements throughout the entire process and avoids the adverse effects of measurement errors caused by zero-point drift on the process. In the long run, it reduces potential cost losses caused by inaccurate measurements.

[0042] In a preferred embodiment, such as Figure 2 As shown, the automatic calibration method for thin film gauge zero-point drift further includes: If the second offset rate is not less than the second offset rate threshold, proceed to step S11 to determine whether the number of consecutive times the second offset rate is not less than the second offset rate threshold has reached the number threshold: If the number of consecutive attempts does not reach the threshold, return to step S8; If, during the loop of steps S8-S10, the number of consecutive counts does not reach the count threshold, there are instances where the second offset rate is less than the second offset threshold. Then the zero-point reading corresponding to that number of processes. As a zeroing reference, continue to the next process.

[0043] If the number of consecutive steps reaches the threshold, proceed to step S12 to check if the diaphragm gauge is damaged and needs to be replaced. If the diaphragm gauge needs to be replaced, return to step S2 to obtain the pre-process zero-point reading under the bottom pressure state of the process chamber before the process, which can be recorded as... That is, the initial zero-point reading of the new thin-film gauge is This allows for convenient data storage while also providing information on the number of times the thin film gauge can be replaced, facilitating maintenance.

[0044] In one feasible embodiment, the number threshold is 3-5 times.

[0045] In the automatic calibration method for zero-point drift of the thin-film gauge described in this invention, if the second offset rate fails to meet the requirements multiple times consecutively, a prompt is made to check whether the thin-film gauge is damaged. This avoids long-term measurement errors caused by equipment failure and reduces potential cost losses due to inaccurate measurements in the long run. The method addresses improving zero-point calibration accuracy at a low cost by focusing on cost, accuracy, and fault warning.

[0046] Figure 3 This is a schematic flowchart of a preferred embodiment of the automatic calibration method for zero-point drift of thin film gauges described in this invention, as follows: Figure 3 As shown, the automatic calibration method for zero-point drift of thin film gauges includes: Step S10: Evacuate the process chamber to low pressure before the process by means of a dry pump, molecular pump or / and cryogenic pump under the monitoring of an ion gauge; Step S20: Reset the thin film gauge to zero. Step S30: Obtain the zero-point reading before the thin film process. ; Step S40: After the process, the process chamber is evacuated to low pressure using a dry pump, molecular pump, or / and cryogenic pump under the monitoring of an ion gauge. Step S50: Obtain the readings after the thin film gauge process. ; Step S60: Compare the post-process reading with the pre-process zero-point reading to obtain the first offset rate. Determine whether the first offset rate is less than the first offset rate threshold. If the first offset rate is less than the first offset rate threshold, then step S70 is executed to continue the process, that is: Without resetting the thin film gauge before the process begins, the process continues directly to the next process. If the first offset rate is not less than the first offset rate threshold, then step S80 is executed, and the thin film gauge is reset to zero for the first time after the process. Step S90: Obtain the post-process zero-point reading of the thin film gauge after its first reset following the process. ; Step S100: Compare the zero-point reading after the first reset with the zero-point reading before the process to obtain the second offset rate. Determine whether the second offset rate is less than the second offset rate threshold. If the second offset rate is less than the second offset rate threshold, then step S110 is executed to continue the process, that is: The zero point of the thin film gauge is reset to In the state of (step S80 achieved), proceed directly to the next process; If the second offset rate is not less than the second offset rate threshold, then execute the second reset of the thin film gauge to zero after the process. Step S130: Obtain the post-process zero-point reading after the second reset of the thin film gauge following the process. ; Step S140: Compare the zero-point reading after the second reset with the zero-point reading before the process to obtain the second offset rate. Determine whether the second offset rate is less than the second offset rate threshold. If the second offset rate is less than the second offset rate threshold, then step S150 is executed to continue the process, that is: Reset the membrane gauge to its zero point In the state of (step S120 is achieved), directly continue to the next process; If the second offset rate is not less than the second offset rate threshold, then step S160 is executed, and the thin film gauge is reset to zero for the third time after the process. Step S170: Obtain the post-process zero-point reading after the third reset of the thin film gauge following the process. ; Step S180: Compare the zero-point reading after the third reset with the zero-point reading before the process to obtain the second offset rate. Determine whether the second offset rate is less than the second offset rate threshold. If the second offset rate is less than the second offset rate threshold, then step S190 is executed to continue the process, that is: Reset the membrane gauge to its zero point In the state of (step S160 is achieved), proceed directly to the next process; If the second offset rate is not less than the second offset rate threshold, it means that the second offset rate is not less than the second offset rate threshold three times in a row, and the number of times has reached the threshold. Then, step S200 is executed to check whether the film gauge is damaged and whether the film gauge needs to be replaced. If the film gauge is replaced (step S210), return to step S20. Before the process, under the low pressure state of the process chamber, the newly replaced film gauge needs to be reset to zero point to obtain the zero point reading before the process as the initial zero point reading of the new film gauge.

[0047] Figure 4 This is a schematic block diagram of an embodiment of the automatic calibration thin film gauge zero-point drift system described in this invention, as shown below. Figure 4 As shown, the automatic calibration thin film gauge zero-point drift system 10 includes: Reset module 12: configured to reset the thin film gauge to zero; Decision module 13 is configured to obtain the pre-process zero-point reading of the film gauge after the reset module 12 resets the film gauge under low-pressure conditions in the process chamber before the process process, and the post-process reading of the film gauge under low-pressure conditions in the process chamber after the process process; determine whether the first offset rate of the post-process reading relative to the pre-process zero-point reading is less than a first offset rate threshold; if the first offset rate is less than the first offset rate threshold, issue a first decision signal to continue executing the next process process; if the first offset rate is not less than the first offset rate threshold, issue a second decision signal to reset the film gauge to the reset module 12; obtain the post-process zero-point reading of the film gauge after the reset module 12 receives the second decision signal and resets the film gauge under low-pressure conditions after the process process; determine whether the second offset rate of the post-process zero-point reading relative to the pre-process zero-point reading is less than a second offset rate threshold; if the second offset rate is less than the second offset rate threshold, issue the first decision signal; if the second offset rate is not less than the second offset rate threshold, send the second decision signal to the reset module 12.

[0048] In one feasible embodiment, the automatic calibration thin film gauge zero-point drift system further includes a counting module 14, which is configured to count the number of times the decision module 13 continuously issues a second decision signal, and generate a count signal to send to the decision module. The decision module 13 is further configured to determine whether the number of times the second decision signal is continuously issued in the count signal received by the counting module 14 has reached a count threshold. If the count threshold is reached, a third decision signal for checking the membrane gauge is issued. If the count threshold is not reached, a second decision signal is issued to the reset module 12.

[0049] In one feasible embodiment, the automatic calibration thin film gauge zero drift system 10 further includes a vacuum module 11 configured to evacuate the process chamber to a low pressure.

[0050] In one feasible embodiment, the vacuum module 11 includes one or more of a dry pump, a molecular pump, and a cryogenic pump.

[0051] Figure 5 This is a schematic block diagram of one embodiment of the semiconductor manufacturing equipment described in this invention, as shown below. Figure 5 As shown, the semiconductor manufacturing equipment 1 includes a process chamber 20, a thin film gauge 30, an ion gauge 40, and an automatic calibration thin film gauge zero-point drift system 10. The thin film gauge 30 and the ion gauge 40 are respectively connected to the process chamber 20, and the ion gauge 40 is configured to monitor the bottom pressure of the process chamber; The automatic calibration film gauge zero drift system 10 is configured to automatically calibrate the zero drift of the film gauge 30.

[0052] In one feasible embodiment, the semiconductor device 1 further includes a vacuum pumping module 11 configured to evacuate the process chamber. The vacuum pumping module can be a vacuum pumping device independent of the automatic calibration thin film gauge zero-point drift system 10, or it can be a component of the automatic calibration thin film gauge zero-point drift system 10.

[0053] Figure 6 A schematic diagram of an application scenario of the automatic calibration thin film gauge zero-point drift system described in this invention is shown.

[0054] exist Figure 6 In the application scenario, the automatic calibration film gauge zero-point drift system 10 includes a computing device 100. The computing device 100 acquires the low pressure 101 after the process chamber is evacuated, and resets the film gauge to zero before the process, obtaining the pre-process zero-point reading 102 of the film gauge. Then, the computing device 100 acquires the post-process reading 103 of the film gauge under low pressure after the process chamber is evacuated to low pressure, and obtains a first offset rate 104 of the post-process reading 103 relative to the pre-process zero-point reading 102. Afterwards, the computing device 100 determines whether to execute the next process 107 or reset the film gauge to zero under low pressure after the process based on whether the first offset rate 104 is less than a first offset rate threshold. If the film gauge is reset to zero under low pressure after the process, the post-process zero-point reading 105 and a second offset rate 106 relative to the pre-process zero-point reading 102 of the film gauge are obtained. Finally, the computing device 100 determines whether to execute the next process 107 or check the film gauge 108 based on the second offset rate, and determines whether the film gauge is damaged.

[0055] It should be noted that the aforementioned computing device 100 can be either hardware or software. When the computing device 100 is hardware, it can be implemented as a distributed cluster composed of multiple servers or terminal devices, or as a single server, a single terminal device, or a single controller (such as a PLC controller). When the computing device 100 is software, it can be installed in the hardware devices listed above. It can be implemented as, for example, multiple software programs or software modules used to provide distributed services, or as a single software program or software module. No specific limitations are made here.

[0056] Figure 7 A schematic diagram of another application scenario of the automatic calibration thin film gauge zero-point drift system described in this invention is shown.

[0057] exist Figure 7 In the application scenario, the components of the computing device 100 include, but are not limited to, a memory 110 and a processor 120. The processor 120 is connected to the memory 110 via a bus 130, and may also include a database 150 for storing data.

[0058] The computing device 100 also includes an access device 140 that enables the computing device 100 to communicate via one or more networks 160. Examples of these networks include Public Switched Telephone Network (PSTN), Local Area Network (LAN), Wide Area Network (WAN), Personal Area Network (PAN), or combinations of communication networks such as the Internet. The access device may include one or more of any type of wired or wireless network interface (e.g., a network interface controller (NIC)), such as a Wireless Local Area Network (WLAN) interface, a Wi-MAX (Worldwide Interoperability for Microwave Access) interface, an Ethernet interface, a Universal Serial Bus (USB) interface, a cellular network interface, a Bluetooth interface, or a Near Field Communication (NFC) interface.

[0059] In one embodiment of the present invention, the above-mentioned components of the computing device 100 and Figure 7 Other components, not shown, can also be connected to each other, for example, via a bus. It should be understood that... Figure 7 The structural block diagram of the computing device 100 shown is for illustrative purposes only and is not intended to limit the scope of the invention. Those skilled in the art can add or replace other components as needed.

[0060] The computing device 100 can be any type of stationary or mobile computing device 100, including mobile computers or mobile computing devices 100 (e.g., tablet computers, personal digital assistants, laptop computers, notebook computers, netbooks, etc.), mobile phones (e.g., smartphones), wearable computing devices 100 (e.g., smartwatches, smart glasses, etc.) or other types of mobile devices, or stationary computing devices 100 such as desktop computers or personal computers (PCs). The computing device 100 can also be a mobile or stationary server.

[0061] The processor executes computer-executable instructions, which, when executed by the processor, implement the steps of the above-described automatic calibration thin-film gauge zero-point drift method. The above is an illustrative scheme of a computing device 100 according to this embodiment. It should be noted that the technical solution of this computing device 100 and the technical solution of the above-described automatic calibration thin-film gauge zero-point drift method belong to the same concept. Details not described in detail in the technical solution of the computing device 100 can be found in the description of the technical solution of the above-described automatic calibration thin-film gauge zero-point drift method.

[0062] The present invention also provides a computer-readable storage medium storing computer-executable instructions that, when executed by a processor, implement the steps of the above-described automatic calibration method for zero-point drift of thin-film gauges.

[0063] The above is an illustrative embodiment of the computer-readable storage medium of the present invention. It should be noted that the technical solution of this storage medium belongs to the same concept as the technical solution of the above-described automatic calibration thin-film gauge zero-point drift method. Details not described in detail in the technical solution of the storage medium can be found in the description of the technical solution of the above-described automatic calibration thin-film gauge zero-point drift method.

[0064] The present invention also provides a computer program, wherein when the computer program is executed in a computer, the computer is instructed to perform the steps of the above-described automatic calibration method for zero-point drift of thin film gauges.

[0065] The above is an illustrative scheme of the computer program described in this invention. It should be noted that the technical solution of this computer program and the technical solution of the aforementioned automatic calibration method for zero-point drift of thin film gauges belong to the same concept. Details not described in detail in the computer program's technical solution can be found in the description of the aforementioned automatic calibration method for zero-point drift of thin film gauges.

[0066] In the above application scenarios, the automatic calibration thin film gauge zero-point drift system may also include a vacuum module to evacuate the process chamber to a low pressure.

[0067] The foregoing has described specific embodiments of the invention. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired results. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0068] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to the embodiments of the present invention.

[0069] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0070] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the embodiments of the present invention. These embodiments are selected and specifically described to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention.

Claims

1. A method for automatically calibrating the zero-point drift of a thin-film gauge, characterized in that, include: Zeroing step before process: Before the process, under the low pressure state of the process chamber corresponding to the film gauge, reset the film gauge to zero point and obtain the zero point reading value as the zero point reading value before process. Post-process reading acquisition steps: After the process is completed, under the low pressure state of the process chamber, obtain the reading of the thin film gauge as the post-process reading; First offset rate judgment step: Determine whether the first offset rate of the post-process reading relative to the pre-process zero-point reading is less than the first offset rate threshold: If the first offset rate is less than the first offset rate threshold, it is determined that the film gauge has not experienced zero-point drift, the film gauge does not need to be reset again, and the next process can be continued directly; If the first offset rate is not less than the first offset rate threshold, it is determined that the film gauge has experienced zero-point drift, and the post-process zeroing step is executed. Post-process zeroing step: Under the low pressure state of the process chamber after the process is completed, reset the diaphragm gauge to zero point and obtain the zero point reading, which is used as the post-process zero point reading. Second offset rate determination step: Determine whether the second offset rate of the zero-point reading after the process relative to the zero-point reading before the process is less than the second offset rate threshold. If the second offset rate is less than the second offset rate threshold, continue to the next process. The zero point reference of the thin film gauge is the zero point reading after the process. If the second offset rate is not less than the second offset rate threshold, return to the post-process zeroing step.

2. The automatic calibration method for zero-point drift of thin film gauges according to claim 1, characterized in that, The second offset rate determination step further includes: If the second offset rate is not less than the second offset rate threshold, maintain at low pressure, repeat the zeroing step and the second offset rate judgment step after the process. If the number of consecutive times the second offset rate is not less than the second offset rate threshold reaches the threshold, check if the film gauge is damaged and if it needs to be replaced. If the film gauge is replaced, return to the zeroing step before the process. If the number of consecutive times the second offset rate is not less than the second offset rate threshold does not reach the threshold, return to the zeroing step after the process. If there are times when the second offset rate is less than the second offset rate threshold during the process where the number of consecutive times does not reach the threshold, use the zero-point reading after the process corresponding to the number of times as the zero-point reference of the film gauge and continue to the next process.

3. The automatic calibration method for zero-point drift of thin film gauges according to claim 2, characterized in that, The threshold number of times is 3-5 times.

4. The automatic calibration method for zero-point drift of thin film gauges according to claim 1, characterized in that, It also includes a pre-process vacuuming step, including: Before the process begins, the process chamber is evacuated to a low pressure.

5. The automatic calibration method for zero-point drift of thin film gauges according to claim 4, characterized in that, It also includes a post-process vacuuming step, including: After the process, the process chamber is evacuated to a low pressure.

6. The automatic calibration method for zero-point drift of thin film gauges according to claim 5, characterized in that, The pre-process vacuuming step and / or post-process vacuuming step includes: evacuating the process chamber corresponding to the thin film gauge to a low pressure under the monitoring of an ion gauge.

7. The automatic calibration method for zero-point drift of thin film gauges according to claim 1, characterized in that, The bottom pressure is less than 1×10 -6 Entrust.

8. The automatic calibration method for zero-point drift of thin film gauges according to claim 1, characterized in that, The first offset rate threshold is determined based on the process accuracy, and the second offset rate threshold is determined based on the measurement accuracy of the thin film gauge.

9. The automatic calibration method for zero-point drift of thin film gauges according to claim 1, characterized in that, The second offset rate threshold is less than the first offset rate threshold.

10. An automatic calibration system for zero-point drift of thin film gauges, characterized in that, Includes a reset module and a decision module: The reset module is configured to reset the thin film gauge to zero. The decision module is configured to obtain the pre-process zero-point reading of the membrane gauge after the reset module resets the membrane gauge in the process chamber under low pressure before the process, and the post-process reading of the membrane gauge in the process chamber under low pressure after the process. Determine whether the first offset rate of the post-process reading relative to the pre-process zero-point reading is less than the first offset rate threshold. If the first offset rate is less than the first offset rate threshold, a first decision signal is issued to continue executing the next process step. If the first offset rate is not less than the first offset rate threshold, a second decision signal to reset the thin film gauge is sent to the reset module. After obtaining the process, the reset module receives the second decision signal under low pressure and resets the thin film gauge to obtain the post-process zero-point reading. Determine whether the second offset rate of the zero-point reading after the process relative to the zero-point reading before the process is less than the second offset rate threshold; if the second offset rate is less than the second offset rate threshold, issue the first decision signal; If the second offset rate is not less than the second offset rate threshold, then a second decision signal is sent to the reset module.

11. The automatic calibration thin film gauge zero-point drift system according to claim 10, characterized in that, It also includes a counting module, which is configured to count the number of times the decision module continuously issues a second decision signal, and generate a count signal to send to the decision module; The decision module is further configured to determine whether the number of times the second decision signal is continuously issued in the count signal received by the counting module reaches a count threshold. If the count threshold is reached, a third decision signal for checking the membrane gauge is issued; if the count threshold is not reached, a second decision signal is issued to the reset module.

12. The automatic calibration thin film gauge zero-point drift system according to claim 10, characterized in that, It also includes a vacuum module: the vacuum module is configured to evacuate the process chamber to a low pressure.

13. A semiconductor manufacturing apparatus, characterized in that, Includes a process chamber, a thin film gauge, an ion gauge, and an automatic calibration thin film gauge zero-point drift system as described in any one of claims 10-12: The thin film gauge and the ion gauge are respectively connected to the process chamber, and the ion gauge is configured to monitor the bottom pressure of the process chamber.

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