Fast switching gas paths and processing chambers for gas stabilization, and related methods and apparatus

Abstract

Embodiments generally relate to gas paths that distribute a gas to process a substrate suitable for semiconductor fabrication. In one or more embodiments, a flow controller of a gas path is used to stabilize, distribute, and switch a gas to process a substrate suitable for semiconductor fabrication. In one or more embodiments, a gas circuit includes one or more first flow ratio controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second flow ratio controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. And a plurality of second valves operable to open and close a flow of a second gas. The gas circuit further comprises a first group of gas pipelines connected with the first flow ratio controller and a second group of gas pipelines connected with the second flow ratio controller.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to gas lines that distribute gases to process substrates suitable for semiconductor manufacturing. In one or more embodiments, flow controllers of the gas lines are used to stabilize, distribute, and switch gases to process substrates suitable for semiconductor manufacturing. BACKGROUND

[0002] Semiconductor substrates are processed for various applications, including the manufacture of integrated devices and micro devices. Operations, such as epitaxial deposition operations, can involve a variety of process gases. These gases can need to be stabilized before being introduced into a processing chamber. Operations can require time to stabilize the gases for use. Operations can also involve a large number of purge iterations between gas flows. The amount of time required for stabilization and purging can result in processing delays, reduced processing throughput, and high operational costs.

[0003] Accordingly, there is a need in the art for improved gas lines and substrate processing methods. SUMMARY

[0004] Embodiments of the present disclosure generally relate to gas lines that distribute gases to process substrates suitable for semiconductor manufacturing. In one or more embodiments, flow controllers of the gas lines are used to stabilize, distribute, and switch gases to process substrates suitable for semiconductor manufacturing. For example, the flow controllers can stabilize and switch flow of different gases in a fast and efficient manner.

[0005] In one or more embodiments, the gas line includes one or more first flow ratio controllers operable to control flow of a first gas, a plurality of first valves operable to open and close flow of the first gas, one or more second flow ratio controllers operable to control flow of a second gas, and a plurality of second valves operable to open and close flow of the second gas. The gas line further includes a first set of gas lines connected to the first flow ratio controllers and a second set of gas lines connected to the second flow ratio controllers.

[0006] In one or more embodiments, a processing chamber includes a processing volume defined at least in part by a chamber body, injectors operable to inject a first gas and a second gas into a plurality of zones of the processing volume, a first set of gas lines operable to supply the first gas to the injectors, a second set of gas lines operable to supply the second gas to the injectors, and a gas panel. The gas panel includes one or more first supply flow controllers operable to supply the first gas, and one or more second supply flow controllers operable to supply the second gas. The processing chamber further includes one or more first flow ratio controllers operable to control a flow of the first gas received from the one or more first supply flow controllers, the first flow ratio controllers disposed between the first set of gas lines and the one or more first supply flow controllers, and one or more second flow ratio controllers operable to control a flow of the second gas received from the one or more second supply flow controllers, the second flow ratio controllers disposed between the second set of gas lines and the one or more second supply flow controllers.

[0007] In one or more embodiments, a method of using a gas line in a processing chamber includes flowing an inert gas through a first set of gas lines into a processing volume of the processing chamber and flowing a first gas through a vent line until a stability condition is met. The method includes, when the stability condition is met, switching the first gas to flow through the first set of gas lines while the inert gas is flowing through the first set of gas lines into the processing volume of the processing chamber. BRIEF DESCRIPTION OF DRAWINGS

[0008] In order to enable a fuller understanding of the above-described features of the present disclosure, a more complete description will be provided below of the present disclosure, which should be taken in conjunction with the accompanying drawings, in which some embodiments of the disclosure are shown. It is noted, however, that the accompanying drawings are not intended to be exhaustive or limiting of the disclosure, as it is to be understood that many other equally effective embodiments can be implemented, in addition to those shown.

[0009] Figure 1 is a side cross-sectional view schematic of a processing chamber and gas line in accordance with one or more embodiments.

[0010] Figure 2 is a side cross-sectional view schematic of a processing chamber and gas line in accordance with one or more embodiments. Figure 1 is a top view schematic of a processing chamber shown.

[0011] Figure 3 is a top view schematic of a processing chamber shown. Figure 1 is a schematic view of a gas line shown.

[0012] Figures 4A-4G is a schematic view of a gas line during a substrate processing method in accordance with one or more embodiments.

[0013] Figure 5 is a schematic block diagram view of a method of a process in accordance with one or more embodiments. Figures 4A-4G is a schematic block diagram view of a method of a process in accordance with one or more embodiments.

[0014] Figure 6 is a side view schematic diagram of a process chamber with a gas line in accordance with one or more embodiments.

[0015] Figure 7A is a side view schematic diagram of a process chamber with a gas line in accordance with one or more embodiments. Figure 6 is a partial schematic diagram of a gas line in accordance with one or more embodiments.

[0016] Figure 7B is a partial schematic diagram of a gas line in accordance with one or more embodiments. Figure 7A is a schematic diagram of one of the valve assemblies of the gas line in accordance with one or more embodiments.

[0017] Figure 7C is a schematic diagram of a valve assembly in accordance with one or more embodiments.

[0018] Figure 8 is a side view schematic diagram of a gas line when connected with an injector in accordance with one or more embodiments.

[0019] Figures 9A-9G is a partial schematic diagram of a gas line during a substrate processing method in accordance with one or more embodiments.

[0020] Figure 10 is a schematic block diagram view of a method of a process in accordance with one or more embodiments. Figures 9A-9G is a schematic block diagram view of a method of a process in accordance with one or more embodiments.

[0021] Figure 11 is a partial schematic diagram of a gas line in accordance with one or more embodiments.

[0022] Figure 12 is a side view schematic diagram of a gas line in accordance with one or more embodiments. Figure 11

[0023] Figure 13 is a partial schematic diagram of a gas line in accordance with one or more embodiments.

[0024] Figures 14A-14B is a side view schematic diagram of a portion of a gas line in accordance with one or more embodiments.

[0025] Figure 15 is a partial schematic diagram of a gas line in accordance with one or more embodiments.

[0026] Figure 16 is a side view schematic diagram of a portion of a gas line in accordance with one or more embodiments. Figure 15

[0027] Figure 17 ​​This is a schematic diagram of a valve assembly according to one or more embodiments.

[0028] Figure 18 This is a schematic diagram of a valve assembly according to one or more embodiments.

[0029] For ease of understanding, the same reference numerals are used where possible to denote the same elements common in the figures. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0030] This disclosure relates to gas paths for distributing gases to process substrates suitable for semiconductor manufacturing. In one or more embodiments, a flow controller for the gas path is used to stabilize, distribute, and switch the gases to process the substrates suitable for semiconductor manufacturing.

[0031] Figure 1 This is a schematic side cross-sectional view of the processing chamber 100 and gas path 300 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of reactive gases across the top surface 150 of the substrate 102. The processing chamber 100... Figure 1 The processing conditions are displayed in the document.

[0032] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and an injector 112 disposed between the upper body 156 and the lower body 148. The injector 112 may be, for example, a ring. The shape of the injector 112 may be arcuate or rectangular. The upper body 156, the injector 112, and the lower body 148 form the chamber body. Within the chamber body are disposed a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure considers that other heat sources may be used (in addition to or in place of lamps) for the various heat sources described herein. For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0033] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. This disclosure considers other substrate supports (e.g., one or more annular segments including a substrate carrier and / or supporting one or more outer regions of the substrate 102). A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of the upper heat source module 155.

[0034] Multiple lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The upper window 108 is an upper dome and / or is formed of an energy-transmitting material (such as quartz). The lower window 110 is a lower dome and / or is formed of an energy-transmitting material (such as quartz).

[0035] A processing space 136 and a purification space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purification space 138 are portions of the interior space defined at least partially by the upper window 108, the lower window 110 and one or more pads 111.

[0036] A substrate support 106 is disposed within the internal space. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices to provide movement and / or adjustment of the substrate support 106 within the shaft 118 and / or the processing space 136.

[0037] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. When the substrate support 106 is lowered from the processing position to the transfer position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0038] Injector 112 includes one or more gas inlets 212 (e.g., multiple gas inlets) and one or more exhaust outlets 116. For example... Figure 2As shown, using one or more gas inlets 212, injector 112 is operable to inject one or more reactant gases, one or more carrier gases, and one or more purge gases into different areas of the processing space 136. In one or more embodiments, during deposition and / or cleaning operations, one or more gas inlets 212 supply process gas P1 (including one or more reactant gases) to the processing space 136, while one or more second gas inlets 213 supply purge gas P2 to the purge space 138. In one or more embodiments, and as... Figure 1 As shown, one or more gas inlets 212 and / or one or more second gas inlets 213 are disposed on the side of the injector 112 opposite to one or more exhaust outlets 116. A preheating ring 117 is disposed below one or more gas inlets 212 and one or more exhaust outlets 116. The preheating ring 117 is disposed outside the substrate support 106 and is at least partially supported by one or more gaskets 111. One or more gaskets 111 are lined to the inner surface of the injector 112 and protect the injector 112 from the reactive gases used during deposition operations and / or cleaning operations. The gas inlets 212 are positioned parallel to the top surface 150 of the substrate 102 disposed within the processing space 136 to allow flow of one or more reactive gases and one or more carrier gases. One or more exhaust outlets 116 are connected to an exhaust pump 157. The supplied one or more reactive gases may include one or more of silicon (Si), phosphorus (P), germanium (Ge), and / or chlorine (Cl). The one or more carrier gases may include one or more of nitrogen (N2) and / or hydrogen (H2) and / or argon. One or more cleaning gases may include hydrogen (H2), argon (Ar), helium (He), and / or nitrogen (N2). In one or more embodiments, one or more cleaning gases may be introduced into the chamber from gas inlet 212. One or more cleaning gases may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more reactant gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0039] Injector 112 (which may be at least a portion of the sidewall of processing chamber 100) includes one or more gas inlets 212 in fluid communication with processing space 136. The one or more gas inlets 212 are in fluid communication with one or more flow openings formed in or between one or more gaskets 111.

[0040] One or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 connects one or more exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers on the substrate 102. The exhaust system 178 can assist in the controlled etching of the substrate 102. The exhaust system 178 is disposed on the opposite side of the processing chamber 100 relative to the gas inlet 212.

[0041] In one or more embodiments, a gas cap 114 is provided on the injector 112. A gas panel 151 is connected to the gas cap 114 via a first set of gas lines 175 and a second set of gas lines 176. The gas panel 151 is configured to connect to a gas source that supplies reactant gas, carrier gas, and purifying gas to the gas inlet 212 through the gas panel 151. In one or more embodiments, one or more first gases (such as deposition gases) used in the process are incompatible with one or more second gases (such as etching gases or cleaning gases) used in the process. The first set of gas lines 175 delivers the first gas to the gas cap 114. The second set of gas lines 176 delivers the second gas to the gas cap 114. One or more ventilation lines 164 connect the gas panel 151 to a ventilation outlet 153. The ventilation outlet 153 may be connected to an exhaust pump 157. In one or more embodiments, the first set of gas lines 175 and the second set of gas lines 176 are connected to the ventilation outlet 153 via the ventilation lines 164. Figure 2 and Figure 3 The document further describes the gas panel 151, the ventilation outlet 153, the first set of gas pipes 175, the second set of gas pipes 176, and the ventilation pipe 164.

[0042] During a deposition operation (e.g., an epitaxial growth operation), one or more first gases are delivered to one or more gas inlets 212 via a first set of gas lines 175. The one or more first gases flow through the one or more gas inlets 212 and through one or more gaps to flow over the substrate 102. The one or more first gases are discharged through one or more gaskets 111 and through one or more exhaust outlets 116. In some embodiments, the first gases are suspended in one or more carrier gases.

[0043] During etching or cleaning operations, one or more second gases are delivered to one or more gas inlets 212 via a second set of gas lines 176. The one or more second gases flow through the one or more gas inlets 212, through one or more gaskets 111, and into the processing space 136.

[0044] Controller 190 (described below) can control deposition processes, etching processes, and / or cleaning processes. As shown, controller 190 communicates with processing chamber 100 and is used to control processes and methods, such as those described herein (e.g., Figures 4A-4G Method 500 Figures 9A-9G The operation of (and / or method 1000).

[0045] The controller 190 is configured to receive data or inputs from multiple sensors as sensor readings. For example, the sensors may include: sensors monitoring layer growth on substrate 102; sensors monitoring the flow rate of reactive gases in gas panel 151 and the first and second sets of gas lines 175, 176; and / or sensors monitoring the temperature of substrate 102, substrate support 106, and / or gaskets 111, 163. The controller 190 is equipped with or communicates with a system model of the processing chamber 100. The system model may include a heating model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (such as gas flow rate, gas pressure, processing temperature of substrate support 106 and / or substrate 102, component rotational position, heating profiles, coating conditions, and / or etching conditions) throughout the deposition, cleaning, and / or etching operations. The controller 190 is further configured to store readings and calculation results. The readings and calculations include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculations further include calculated values ​​stored after the controller 190 measures the sensor readings and runs them through the system model. Therefore, the controller 190 is configured to both retrieve stored readings and calculations and save them for future use. Saving previous readings and calculations allows the controller 190 to adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0046] The controller 190 can monitor, estimate optimized parameters, calibrate one or more flow rate sensors, generate alarms on the display, stop deposition operations, initiate chamber downtime periods, delay subsequent iterations of deposition operations, initiate etching operations, stop etching operations, adjust heating power and / or otherwise adjust process formulations.

[0047] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuitry 192 for the CPU 193. The controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicatively coupled to a dedicated controller, and the controller 190 functions as a central controller.

[0048] Controller 190 is any form of general-purpose computer processor that can be used in an industrial environment to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191 or non-transitory computer-readable medium is one or more readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital memory. Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry systems, and subsystems, etc. Operating parameters (such as...) Figures 4A-4G , Figure 5 and Figures 9A-9G as well as Figure 10 The deposition, cleaning, and etching processes (discussed herein) and operations are stored as software routines in memory 191. Executing or invoking these software routines transforms controller 190 into a purpose-specific controller for controlling the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. For example, instructions stored in memory, when executed, cause... Figure 1 , Figure 3 , Figures 4A-4G Method 500 Figures 9A-9G One or more operations related to the processing chamber 100 in method 1000. The controller 190 and the processing chamber 100 are at least part of the system for processing the substrate.

[0049] The various operations described in this article (such as...) Figure 1 , Figure 3 , Figures 4A-4G Method 500 Figures 9A-9G The operation of method 1000 can be performed automatically by controller 190, or can be performed automatically or manually by certain operations performed by the user.

[0050] In one or more embodiments, controller 190 includes a large-capacity storage device, an input control unit, and a display unit. Controller 190 monitors the temperature of substrate 102, the temperature of substrate support 106, process gas flow rate, and / or purge gas flow rate. In one or more embodiments, controller 190 includes multiple controllers 190 such that stored readings and calculation results, as well as the system model, are stored in a controller independent of controller 190, which controls the operation of processing chamber 100. In one or more embodiments, all system models and stored readings and calculation results are stored within controller 190.

[0051] The controller 190 is configured to control the upward heat source 141, the lower heat source 143, the gas panel 151, the motion component 121, and the exhaust pump 157, as well as... Figures 3-5 The valves and flow controllers described in the gas panel 151 provide outputs to control (e.g., by calibration) the airflow through the processing chamber 100 for deposition, cleaning, etching, rotational positioning, heating, and other processes.

[0052] The controller 190 is configured to adjust the output to the control based on sensor readings, a system model, and stored readings and calculations. The controller 190 includes embedded software and compensation algorithms for calibrating measurements. The controller 190 may include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for calibration, deposition, etching, and / or cleaning operations. Optimized parameters may include, for example, one or more stabilization conditions and / or one or more flow times associated with achieving one or more stabilization conditions.

[0053] One or more machine learning and / or artificial intelligence algorithms can implement, adjust, and / or streamline the aforementioned algorithms, inputs, outputs, or variables. Alternatively or additionally, one or more machine learning and / or artificial intelligence algorithms can prioritize or rank certain aspects of adjustments to the processing chamber 100, gas path 300, method 500, and / or method 1000 relative to other aspects of the processing chamber 100, gas path 300, method 500, and / or method 1000. One or more machine learning and / or artificial intelligence algorithms can take into account other changes within the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning and / or artificial intelligence algorithms take into account upstream or downstream changes in the processing system due to changes in variables. For example, if an adjustment to variable "A" causes a change in aspect "B" of the process, and this adjustment unintentionally causes a change in aspect "C" of the process, then one or more machine learning and / or artificial intelligence algorithms can take this change in aspect "C" into account. In this embodiment, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to the implementation of processing chamber 100, gas path 300, method 500, and / or method 1000. These predictive aspects can be used to mitigate unexpected changes within the processing system in advance.

[0054] One or more machine learning and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate optimization parameters. The algorithms may be unsupervised or supervised. One or more machine learning and / or artificial intelligence algorithms may, for example, optimize one or more steady-state conditions, one or more flow times, heating power applied to heat sources 141, 143, cleaning formulations, etching formulations, and / or deposition formulations.

[0055] In one or more embodiments, controller 190 performs the operations described herein automatically without using one or more machine learning algorithms and / or artificial intelligence algorithms. In one or more embodiments, controller 190 compares measured values ​​with data in lookup tables and / or libraries to calibrate the temperature sensor. Controller 190 may store the measured values ​​as data in lookup tables and / or libraries.

[0056] Figure 2 According to one or more embodiments Figure 1 A top view of the processing chamber 100 is shown. Injector 112 (e.g.) Figure 1(As shown) includes a plurality of gas injection channels fluidly disposed between the gas cap 114 and the gasket 111. Gas inlet 212 includes one or more central gas openings 212a, one or more first external gas openings 212b located on a first side of the one or more central gas openings 212a, and one or more second external gas openings 212c located on a second side of the one or more central gas openings 212a. Gas inlet 212 includes one or more first intermediate gas openings 212d located between the one or more central gas openings 212a and the one or more first external gas openings 212b, and one or more second intermediate gas openings 212e located between the one or more central gas openings 212a and the external gas openings 212b, 212c. The one or more first external gas openings 212b and the one or more second external gas openings 212c correspond to two edge regions of the substrate.

[0057] Gas openings 212a-212e correspond to five controllable and adjustable flow regions on the substrate. Different numbers of flow regions (such as two, three, or more than five flow regions) are considered. For example, one or more central gas openings 212a correspond to the central region of the substrate, and other numbers of flow regions (such as up to ten or more flow regions) are also considered.

[0058] The gas panel 151 is shown connected to the gas cap 114 via a first set of gas lines 175 and a second set of gas lines 176. The first set of gas lines 175 may, for example, include multiple pipes. The number of gas lines in the first set of gas lines 175 may correspond to the number of flow areas. Each gas line 175 can supply gas to a corresponding flow area within the flow areas. The number of gas lines in the second set of gas lines 176 may correspond to the number of flow areas. Each gas line 176 can supply gas to a corresponding flow area within the flow areas. The second set of gas lines 176 may include multiple pipes.

[0059] Figure 3 According to one or more embodiments Figure 1A schematic diagram of the gas path 300 is shown. The gas path 300 includes a gas panel 151, a first set of gas lines 175, a second set of gas lines 176, multiple ventilation lines 164, and a ventilation outlet 153. Gas lines 175 and 176 are connected to an injector 112 via a gas cap 114. The gas panel 151 includes multiple first supply flow controllers 301. Each first supply flow controller 301 is operable to supply one or more first gases. Each first supply flow controller 301 is connected to multiple first supply valves 303, which are operable to allow or stop the flow of the first gas. A single first supply flow controller 301 or multiple first supply flow controllers 301 can be used. Each first supply flow controller 301 is connected via gas lines to a first ventilation valve 305 and a first isolation valve 307 (e.g., a deposition valve). The first ventilation valve 305 is connected to a ventilation line 164 leading to the ventilation outlet 153. When the first ventilation valve 305 is open and the first isolation valve 307 is closed, the first gas flows to the ventilation outlet 153. A first deposition valve 307 is connected to a first main pipeline 399. When the first isolation valve 307 is open and the first vent valve 305 is closed, the first gas flows into the first main pipeline 399 through a second isolation valve 315 (e.g., a second deposition valve). A first carrier gas pipeline 309 is connected to gas sources 311 and 313. In one or more embodiments, gas source 311 supplies carrier gas, and gas source 313 supplies purified gas. The first carrier gas pipeline 309 is connected to a second isolation valve 315. When the second isolation valve 315 is open, the first gas and carrier gas flow to a first set of gas pipelines 175. A bypass gas pipeline 398 bypasses the second deposition valve 315 and flows to the first main pipeline 399. When the second isolation valve 315 is closed, purified gas and / or carrier gas can flow to the first set of gas pipelines 175 through a flow controller 397 and a bypass gas pipeline 398. Alternatively or additionally, the purified gas and / or carrier gas may flow through the first carrier gas line 309 via flow controller 393 and valve 392, and toward the second isolation valve 315. The first supply flow controller 301 is connected to one or more gas sources 312, which supply one or more reaction gases to the first supply flow controller 301. This disclosure takes into account that... Figure 13 The first ventilation assembly 1309, the second ventilation assembly 1311, and the pre-duct 1313 shown can be used to replace the ventilation outlet 153 and the ventilation duct 164.

[0060] One or more second supply flow controllers 317 are disposed in the gas panel 151. The one or more second supply flow controllers 317 are operable to supply a second gas. The second supply flow controllers 317 are connected to one or more second supply valves 319, which are operable to allow or stop the flow of the second gas. A single second supply flow controller 317 or multiple second supply flow controllers 317 may be used. The second supply flow controllers 317 are connected to a gas line 321. A gas source 323 is operable to flow a carrier gas and / or a purification gas, and a gas source 395 is operable to flow a second reaction gas, such as a cleaning gas and / or an etching gas. The gas source 323 is connected to the gas line 321. A second vent valve 325 and a second isolation valve 327 (e.g., an etching valve or a cleaning valve) are connected to the gas line 321. A second vent valve 325 is connected to a vent outlet 153 via a vent line 164. When the second vent valve 325 is open and the second isolation valve 327 is closed, the second gas flows to the vent outlet 153. The second isolation valve 327 is connected to the second set of gas lines 176. When the second isolation valve 327 is open and the second ventilation valve 325 is closed, the second gas flows to the second set of gas lines 176.

[0061] Flow controller 326 supplies purified gas to second main pipeline 394 via purified gas pipeline 328. Purified gas pipeline 328 bypasses first isolation valve 327. When second isolation valve 327 is closed, purified gas can flow through purified gas pipeline 328 to second set of gas pipelines 176. Third ventilation valve 324 is connected to gas pipeline 321 via second isolation valve 327. Third ventilation valve 324 is connected to ventilation outlet 153 via ventilation pipeline 164.

[0062] A first set of gas lines 175 is connected to a gas panel 151 and a gas cap 114. Multiple first flow ratio controllers 329 are connected to the gas lines of the first set of gas lines 175. The first flow ratio controllers 329 monitor and control the flow rate of gas (e.g., a first gas) to the first set of gas lines 175. Multiple first flow ratio valves 331 are connected to the first flow ratio controllers 329 to control the flow rate of the first gas. In one or more embodiments, the first set of gas lines 175 includes five gas lines, such as... Figure 3 As shown. In one or more embodiments, as Figure 3As shown, the first flow ratio controller 329 is disposed within the panel housing 149 of the gas panel 151. In one or more embodiments, the first flow ratio controller 329 is disposed outside the panel housing 149 and along a first set of gas lines 175. In one or more embodiments, the first set of gas lines 175 includes two gas lines 175, and two first flow ratio valves 331 and two first flow ratio controllers 329 are respectively connected to the two gas lines 175. Another number of gas lines 175 may also be used (e.g., up to six or more gas lines may be used).

[0063] A second set of gas lines 176 is connected to the gas panel 151 and the gas cap 114. Multiple second flow ratio controllers 333 are connected to the second set of gas lines 176. The second flow ratio controllers 333 monitor and control the flow rate of the gas (e.g., a second gas). Multiple second flow ratio valves 335 are connected to the second flow ratio controllers 333 to control the flow rate of the second gas. In one or more embodiments, the second set of gas lines includes five gas lines, such as... Figure 3 As shown. In one or more embodiments, as Figure 3 As shown, the second flow ratio controller 333 is disposed along the second set of gas lines 176 and outside the panel housing 149 of the gas panel 151. In one or more embodiments, the second flow ratio controller 333 is disposed within the panel housing 149 of the gas panel 151. In one or more embodiments, the second set of gas lines 176 includes two gas lines 176, and two second flow ratio valves 335 and two second flow ratio controllers 333 are respectively connected to the two gas lines 176. Another number of gas lines 176 may also be used (e.g., up to six or more gas lines may be used).

[0064] Figures 4A-4G This is a schematic diagram of the gas path 300 during a substrate processing method according to one or more embodiments. The method may include a deposition process, an etching process, and / or a cleaning process.

[0065] Figure 4AAn inert gas IG1 (e.g., carrier gas and / or purifying gas) is shown flowing through a first set of gas lines 175 and a second set of gas lines 176. A first isolation valve 307 and a second isolation valve 327 are closed. A first supply valve 303 and a second supply valve 319 are closed, preventing the first and second gases from flowing through supply valves 303 and 319 and subsequently out of the first supply flow controller 301 and the second supply flow controller 317. Inert gas IG1 flows from gas sources 311 and 313 to the first set of gas lines 175. Inert gas IG1 flows from gas sources 311 and 313 to the second set of gas lines 176. Inert gas IG1 flows from the first set of gas lines 175 and the second set of gas lines 176 into the processing chamber 100. Inert gas IG1 serves as the purifying gas passing through gas lines 175 and 176.

[0066] Figure 4B The diagram shows a first gas FG1 (e.g., a first reactant gas, such as a deposition gas) flowing through exhaust line 164 to vent outlet 153 during a stabilization process. Inert gas IG1 continues to flow into the processing chamber 100 from a first set of gas lines 175 and a second set of gas lines 176. A first supply valve 303 and a first vent valve 305 are open. The first gas FG1 flows into vent outlet 153. A first supply flow controller 301 monitors a first flow rate of the first gas FG1. The first gas FG1 flows into vent outlet 153 until a stabilization condition is met. In one or more embodiments, the stabilization condition includes pressurizing the processing space 136 to a target pressure. In one or more embodiments, the stabilization condition includes reaching a first flow rate of the first gas and maintaining the first flow rate within a first range for a first time period. The first range is a deviation above and below the first flow rate, and the range may be pre-selected. In one or more embodiments, the first range is 95% to 105% of the first flow rate. In one or more embodiments, the first range is 99% to 101% of the first flow rate. Other values ​​of the first range are also considered. In one or more embodiments, the first time period is 1 second or less, such as in the range of 0.05 seconds to 1 second, for example, in the range of 0.1 seconds to 1 second. In one or more embodiments, the first time period is greater than 1 second, such as in the range of 10 seconds to 20 seconds (or more). Other values ​​for the first time period are also taken into consideration. When a stability condition is met, the flow rate of the first gas FG1 is switched (e.g., Figure 4C (As shown).

[0067] Figure 4CThe flow rate of the first gas FG1, switched to flow into the processing chamber 100 via the first set of gas lines 175, is shown. As part of the switching, the first vent valve 305 is closed and the first isolation valve 307 is open. This disclosure assumes that the continuous flow of inert gas IG1 can be used as a carrier gas for the first gas FG1, and that both inert gas IG1 and the first FG1 flow through the first set of gas lines 175 and into the processing chamber 100. A first flow ratio controller 329 monitors the flow rates of the first gas FG1 and the inert gas IG1 and controls the ratio of the first gas FG1 and the inert gas IG1 supplied to the respective gas lines 175. The first gas FG1 and the inert gas IG1 enter the processing space 136 through gas openings 212a-212e and are used to perform a deposition process on the substrate 102.

[0068] Figure 4D The diagram shows a first gas FG1 flowing through ventilation duct 164 and to ventilation outlet 153 during a second stabilization process. After the deposition process is complete, the first isolation valve 307 is closed and the first ventilation valve 305 is open. The first gas FG1 flows into ventilation outlet 153 until a second stabilization condition is met. When the second stabilization condition is met, the first supply valve 303 is closed. In one or more embodiments, the second stabilization condition includes pressurizing the processing space 136 to a target pressure. In one or more embodiments, the second stabilization condition includes reaching a second flow rate of the first gas and maintaining the second flow rate within a second range for a second time period. The second range is a deviation above and below the second flow rate, and the range may be pre-selected. In one or more embodiments, the second range is 95% to 105% of the second flow rate. In one or more embodiments, the second range is 99% to 101% of the second flow rate. Other values ​​of the second range are also considered. In one or more embodiments, the second time period is 1 second or less, such as in the range of 0.05 seconds to 1 second, for example, in the range of 0.1 seconds to 1 second. In one or more embodiments, the second time period is greater than 1 second, such as in the range of 10 to 20 seconds (or higher). Other values ​​for the second time period are also taken into consideration. In one or more embodiments, the second flow rate is different from (e.g., greater than or less than) the first flow rate.

[0069] Figure 4E The image shows inert gas IG1 flowing through the first set of gas lines 175 and the second set of gas lines 176. Gas line 300 can be positioned in conjunction with... Figure 4A The same operational conditions are shown.

[0070] Figure 4FA second gas SG1 (e.g., a second reactive gas, such as an etching gas and / or a cleaning gas) flows through vent 164 to vent outlet 153 during a third stabilization process. This disclosure assumes that the second gas SG1 may be a second deposition gas having a different composition from the first gas FG1. An inert gas IG1 continues to flow into the processing chamber 100 from the first set of gas lines 175 and the second set of gas lines 176. A second supply valve 319 is open. A second vent valve 325 is open, and a second isolation valve 327 is closed. The second gas SG1 flows into vent outlet 153. A second supply flow controller 317 monitors a second flow rate of the second gas SG1. The second gas SG1 flows into vent outlet 153 until a third stabilization condition is met. In one or more embodiments, the third stabilization condition includes pressurizing the processing space 136 to a target pressure. In one or more embodiments, the third stabilization condition includes reaching a third flow rate of the second gas SG1 and maintaining the third flow rate within a third range for a third time period. The third range is a deviation above and below the third flow rate, and the range may be pre-selected. In one or more embodiments, the third range is 95% to 105% of the third flow rate. In one or more embodiments, the third range is 99% to 101% of the third flow rate. Other values ​​for the third range are considered. In one or more embodiments, the third time period is 1 second or less, such as in the range of 0.05 seconds to 1 second, for example, in the range of 0.1 seconds to 1 second. In one or more embodiments, the third time period is greater than 1 second, such as in the range of 10 seconds to 20 seconds (or higher). Other values ​​for the third time period are considered. When a stable condition is met, the flow rate of the second gas SG1 is switched (e.g., Figure 4G (As shown).

[0071] Figure 4G The second gas SG1 is shown being switched to flow into the processing chamber 100 via the second set of gas lines 176. The second vent valve 325 is closed, and the second isolation valve 327 is open. Inert gas IG1 can be used as a carrier gas for the second gas SG1, and both inert gas IG1 and the second gas SG1 flow through the second set of gas lines 176 and into the processing chamber 100. A second flow ratio controller 333 monitors the flow rates of the second gas SG1 and the inert gas IG1 and controls the ratio of the second gas SG1 and the inert gas IG1 supplied to the respective gas lines 176. The second gas SG1 and the inert gas IG1 enter the processing space 136 through gas openings 212a-212e and are used to perform etching processes on the substrate 102 and / or cleaning operations on the processing chamber 100.

[0072] After the etching and / or cleaning processes are completed, in one or more embodiments, the second gas SG1 may undergo a fourth stabilization procedure and then be shut off by closing the second supply valve 319 when the fourth stabilization condition is met. The inert gas IG1 can then be used as a purge gas through the two gas lines 175, 176. In one or more embodiments, the third stabilization condition includes pressurizing the processing space 136 to a target pressure. In one or more embodiments, the fourth stabilization condition includes reaching a fourth flow rate of the second gas SG1 and maintaining the fourth flow rate within a fourth range for a fourth time period. The fourth range is a deviation above and below the fourth flow rate, and the range may be pre-selected. In one or more embodiments, the fourth range is 95% to 105% of the fourth flow rate. In one or more embodiments, the fourth range is 99% to 101% of the fourth flow rate. Other values ​​of the fourth range are also considered. In one or more embodiments, the fourth time period is 1 second or less, such as in the range of 0.05 seconds to 1 second, for example, in the range of 0.1 seconds to 1 second. In one or more embodiments, the fourth time period is greater than 1 second, such as in the range of 10 seconds to 20 seconds (or more). Taking into account other values ​​for the fourth time period, in one or more embodiments, the fourth flow rate differs from (e.g., is greater than or less than) the third flow rate. After a period of time, the flow rate of inert gas IG1 can be shut off.

[0073] like Figure 3 and Figures 4A-4G As shown, the reaction gases (such as the first gas FG1 and the second gas SG1) are stabilized before flowing upstream of the corresponding first flow ratio controller 329 or second flow ratio controller 333. In one or more embodiments, the first gas FG1 and the second gas SG1 are supplied to the processing chamber 100 via mutually fluid-separated first gas lines 175 and second gas lines 176, respectively.

[0074] Figure 5 It includes according to one or more embodiments. Figures 4A-4G The schematic block diagram view of the process method 500 shown.

[0075] In operation 501, inert gas is introduced into the processing space 136. Inert gas is introduced into the first set of gas lines 175 and the second set of gas lines 176. Figure 4A Operation 501 is described further.

[0076] In operation 502, the first reactant gas is flowed through ventilation duct 164. The first reactant gas is then stabilized to meet the stabilization conditions. Figure 4B Operation 502 is described further.

[0077] In operation 503, the first reaction gas is switched to flow into the processing space 136. In one or more embodiments, the first reaction gas performs a deposition process on the substrate 102. Figure 4C Operation 503 is described further.

[0078] In optional operation 504, the first reactant gas is flowed through ventilation duct 164. The flow rate of the first reactant gas is then stabilized according to the second stability condition. Figure 4D Operation 504 is described further.

[0079] In optional operation 505, the flow of the first reacting gas is stopped. After operation 504 stabilizes, the first reacting gas is shut off at the first supply valve 303. Figure 4D Operation 505 is described further.

[0080] In optional operation 507, the second reactant gas is flowed through ventilation duct 164. The second reactant gas is then stabilized according to the third stability condition. Figure 4F Operation 507 is described further.

[0081] In optional operation 508, the second reactive gas is switched to flow into the processing space 136. The second reactive gas performs an etching process on the substrate 102 and / or a cleaning process on the processing chamber 100. Figure 4G Operation 508 is described further.

[0082] This disclosure takes into account that, in one or more (such as one or all) of operations 502, 503, 504, 505, 507 and / or 508, inert gas may continuously flow into the processing space 136.

[0083] Figure 6 This is a side view schematic diagram of a processing chamber 600 with an air passage 700 according to one or more embodiments. The processing chamber 600 shares features with the processing chamber 100, wherein the different air passages are air passages 700. Air passage 700 may be used in place of air passage 300, or may be combined with air passage 300. The processing chamber 600 may be omitted. Figure 1 The gas cap 114 is shown. The gas path 700 includes multiple gas lines 675 (…). Figure 7A Five valve assemblies 750 are shown connected to injector 112. The valve assemblies can be connected to gas panel 651. A varying number of gas lines 675 can be used. In one or more embodiments, gas path 700 includes two gas lines 675. Valve assemblies 750 are connected to vent outlet 153 via vent line 164. Figures 7A-7C The gas path 700 is further described.

[0084] Figure 7A According to one or more embodimentsFigure 6 A partial schematic diagram of the gas path 700 is shown. The gas panel 151 includes a plurality of first flow controllers 701 (five shown), a plurality of second flow controllers 703 (five shown), and a plurality of supply valves. The plurality of supply valves include a plurality of first supply valves 707 and a plurality of second supply valves 711. The plurality of first flow controllers 701 are connected to the first supply valves 707. The first supply valves 707 are connected to the first supply line 709. The first flow controllers 701 supply a first gas FG1. The first supply valves 707 can prevent the first gas FG1 from flowing from the first flow controllers 701 to the first supply line 709. The first supply line 709 extends from the panel housing 619 of the gas panel 651 and is located away from the first flow controllers 701. Different numbers of first flow controllers 701 and second flow controllers 703 can be used. In one or more embodiments, the gas path 700 includes two first flow controllers 701 and two second flow controllers 703.

[0085] This disclosure takes into account that the valve described herein can be located downstream, upstream, or both downstream and upstream of an associated flow controller. For example, in Figure 7A In the diagram, a first supply valve 707 is shown downstream of a first flow controller 701, and a second supply valve 711 is shown downstream of a second flow controller 703. This disclosure considers that the first supply valve 707 may be located upstream of the first flow controller 701, and / or the second supply valve 711 may be located upstream of the second flow controller 703. This disclosure also considers that the first supply valve 707 may include multiple sets of first supply valves located downstream and upstream of the first flow controller 701, and / or the second supply valve 711 may include multiple sets of second supply valves located downstream and upstream of the second flow controller 703.

[0086] Multiple second flow controllers 703 are connected to a second supply valve 711. The second supply valve 711 is connected to a second supply line 713. The second flow controllers 703 supply a second gas SG1. The second supply valves 711 can prevent the second gas from flowing from the second supply flow controllers 703 to the second supply line 713. The second gas line 711 extends from a gas panel 651. Multiple supply valves 707, 711 are operable to open and close the respective flows of the first and second gases received from one or more first flow controllers 701 and one or more second flow controllers 703.

[0087] A first inert flow controller 725 is connected to a first inert valve 735, and the first inert valve 735 is connected to a first inert line 737. The first inert flow controller 725 supplies inert gas to a first supply line 709 through the first inert line 737. The first inert valve 735 can prevent inert gas from flowing from the first inert flow controller 725 to the first inert line 737. This disclosure considers that the first inert flow controller 725, the first inert valve 735, and the first inert line 737 can be omitted, and inert gas IG1 can be supplied through one or more first flow controllers 701.

[0088] The second inert flow controller 705 is connected to the second inert valve 715. The second inert valve 715 is connected to the second inert pipeline 717. The second supply controller 705 supplies inert gas to the second supply pipeline 713 through the second inert pipeline 717. The second inert valve 715 can prevent inert gas from flowing from the second inert flow controller 705 to the second inert pipeline 717.

[0089] A first inertial conduit 737 and / or a second inertial conduit 717 may extend from the panel housing 619 of the gas panel 651. In one or more embodiments, the first inertial conduit 737 is connected to a first supply conduit 709 outside the panel housing 619 of the gas panel 651, and / or the second inertial conduit 717 is connected to a second supply conduit 713 outside the panel housing 619 of the gas panel 651. In one or more embodiments, the inertial conduits 717 and 737 are connected to supply conduits 709 and 713 inside the panel housing 619 of the gas panel 651.

[0090] The first supply line 709 and the second supply line 713 are connected to one or more valve assemblies 750 (multiple valve assemblies are shown). Figure 7A Five valve assemblies 750 are shown. As described above, different numbers of valve assemblies 750 can be used for gas lines 675, first flow controllers 701, and second flow controllers 703. In one or more embodiments, gas line 700 includes two valve assemblies 750. Valve assemblies 750 are connected to vent outlet 153 via vent line 164. One or more valve assemblies are respectively connected between one or more gas lines 675 on one side and one or more first flow controllers 701 and one or more second flow controllers 703 on the other side. Multiple gas lines 675 are connected to injector 112. Valve assemblies 750 use multiple valves 760 to control which gases reach the multiple gas lines. Figure 7B Valve assembly 750 is further described.

[0091] Figure 7B According to one or more embodiments Figure 7AA schematic diagram of one of the valve assemblies 750 in the shown gas path 700. A first valve 760A controls the flow of a first gas and / or inert gas received from a first supply line 709 to a gas line 675. A second valve 760B controls the flow of a second gas and / or inert gas received from a second supply line 713 to a gas line 675. A first vent valve 760C controls the flow of the first gas to a vent outlet 153. A second vent valve 760D controls the flow of the second gas to a vent outlet 153. The first valve 760A is operable to allow the first gas and / or inert gas to flow to one or more gas lines 675 when open. The first vent valve 760C is operable to allow the first gas to flow to a vent line 164 when open and when the first valve 760A is closed. The second valve 760B is operable to allow the second gas to flow to one or more gas lines 675 when open. The second vent valve 760D is operable to direct a second gas flow to the ventilation duct 164 when open and when the second valve 760B and the first vent valve 760C are closed. In one or more embodiments, the second valve 760B and the first vent valve 760C are arranged in parallel. Valves 760A-760D take other orientations into account.

[0092] In one or more embodiments, if a power outage is detected, the flow rate of the first gas FG1 and the flow rate of the second gas SG1 are shut off (if one of them is open). Inert gas IG1 flowing through the first supply line 709 will then flow to the processing space 136 by opening the first valve 760A (and closing the first vent valve 760C). Furthermore, inert gas IG1 flowing through the second supply line 713 will flow to the ventilation line 164 by opening the second vent valve 760D (and closing the second valve 760B).

[0093] Figure 7C This is a schematic diagram of a valve assembly 770 according to one or more embodiments. The valve assembly 770 can be used as a replacement for... Figure 7A One or more of the valve assemblies 750 shown. Figure 7B The valve assembly 750 shown includes four valves 760A-760D. The valve assembly 770 includes six valves 760A-760F. A first inert valve 760E supplies inert gas to one of the first set of gas lines 175 downstream of the first valve 760A, and a second inert valve 760F supplies inert gas to one of the second set of gas lines 176 downstream of the second valve 760B. Figure 7B In the implementation of the valve assembly 750 shown, inert gas is supplied to the first and second supply lines 709 and 713 on the upstream side of the first and second valves 760A and 760B.

[0094] Figure 8 This is a side view of the air passage 700 when connected to the injector 112 according to one or more embodiments. Figure 8The orientation of the gas passages installed in the processing chamber 100 is shown. In one or more embodiments, gas line 675 is connected to injector 112 from above. In one or more embodiments, first and second flow controllers 701, 703 are coupled together in an alternating arrangement. In one or more embodiments, first and second supply valves 707, 711 are coupled together in an alternating arrangement. In one or more embodiments, one or more valve assemblies 750 are coupled together. In one or more embodiments, vent line 164 is connected to a first sub-line 864a discharging a first gas FG1 and a second sub-line 864b discharging a second gas SG1.

[0095] Figures 9A-9G This is a partial schematic diagram of the gas path 700 during a substrate processing method according to one or more embodiments. The method may include a deposition process, an etching process, and / or a cleaning process.

[0096] Figure 9A Inert gas IG1 is shown flowing through gas line 675. Inert gas IG1 is supplied from a first inert flow controller 725 and a second inert flow controller 705. First valve 760A and second valve 760B are open, and first vent valve 760C and second vent valve 760D are closed. Inert gas IG1 flows through first valve 760A and second valve 760B to gas line 176. Inert gas IG1 flows into processing space 136. First and second flow valves 707 and 711 are closed. The first gas and the second gas do not flow out of first flow controller 701 and second supply flow controller 703 via supply valves 707 and 711.

[0097] Figure 9B The diagram shows a first gas FG1 flowing through ventilation duct 164 to ventilation outlet 153 during a stabilization process. In one or more embodiments, a second valve 760B is open, and inert gas IG1 flows through the second valve 760B to gas duct 675 into processing chamber 100. A first supply valve 707 and a first ventilation valve 760C are open. A first valve 760A and a second ventilation valve 760D are closed. The first gas FG1 flows into ventilation outlet 153. A first flow controller 701 monitors and controls a first flow rate of the first gas FG1. The first gas flows into ventilation outlet 153 until a stabilization condition is met. When the stabilization condition is met, the first flow rate is stabilized and the flow rate of the first gas FG1 is switched (e.g., ...). Figure 9C (As shown).

[0098] This disclosure takes into account that it may be omitted. Figure 9B The image shows inert gas IG1 flowing from the first inert flow controller 725 to the first supply line 709.

[0099] Figure 9CThe diagram shows a first gas FG1 switched to flow into the processing chamber 100 via gas line 675. First vent valve 760C is closed, and first valve 760A is open. The first gas FG1 can be suspended in inert gas IG1, such that inert gas IG1 is used as a carrier gas, and both the first gas FG1 and inert gas IG1 flow into the processing chamber 100 via gas line 675. The first gas FG1 enters the processing space 136 through gas openings 212a-212e and can be used to perform deposition processes on the substrate 102.

[0100] This disclosure takes into account that, if in Figure 9B If the inert gas IG1 does not flow out from the first inert flow controller 725, then... Figure 9C The first inert valve 735 can be opened to allow inert gas IG1 to flow to the first supply line 709. Figure 9C In the middle, the inert gas IG1 flowing out from the second inert flow controller 705 flows to the ventilation duct 164.

[0101] Figure 9D The diagram shows the first gas FG1 flowing through vent duct 164 to vent outlet 153 during the second stabilization process. Once the deposition process is complete, the first valve 760A is closed. The first vent valve 760C is opened. The first gas flows into vent outlet 153 until the second stabilization condition is met. When the second stabilization condition is met, the flow rate of the first gas FG1 is stabilized, and the first supply valve 707 can be closed to shut off the flow rate of the first gas FG1 (e.g., ...). Figure 9E (As shown).

[0102] This disclosure takes into account that it can be omitted from the method. Figure 9D The operation.

[0103] Although it is displayed as off, Figure 9B , Figure 9C and Figure 9D In this process, the flow of inert gas IG1 from the first inert flow controller 725 can be turned on or off.

[0104] Figure 9E The flow rates of inert gas IG1 and the first stop gas FG1 flowing through gas line 675 are displayed. Gas line 300 is in contact with... Figure 9A The same operable conditions are shown. If... Figure 9D The flow shutdown of the first inertial flow controller 725 is then... Figure 9E The first inertia valve 735 can be opened.

[0105] Figure 9FThe diagram shows the second gas SG1 flowing to the ventilation outlet 153 via ventilation duct 164 during the third stabilization process. Inert gas IG1 continues to flow into the processing chamber 100 from gas duct 675. The second flow valve 711 is open. The second ventilation valve 760D is open, and the second valve 760B is closed. The first valve 760A is open, and the first ventilation valve 760C is closed. The second gas flows into the ventilation outlet 153. The second flow controller 703 monitors and controls the third flow rate of the second gas SG1. The second gas SG1 flows into the ventilation outlet 153 until the third stabilization condition is met. When the third stabilization condition is met, the second gas SG1 is stabilized and the flow rate of the second gas SG1 is switched (e.g., ...). Figure 9G (As shown).

[0106] This disclosure takes into account that it may be omitted. Figure 9F The image shows inert gas IG1 flowing from the second inert flow controller 705 to the second supply line 714.

[0107] Figure 9G A second gas SG1 is shown flowing into the processing chamber 100 through gas line 675. Second vent valve 760D is closed, and second valve 760B is open. Inert gas IG1 and second gas SG1 flow into the processing chamber 100 through gas line 675. A second flow controller 703 monitors and controls the flow rate of the second gas SG1. The second gas SG1 enters the processing space 136 through gas openings 212a-212e and is used to perform etching processes on the substrate 102 and / or cleaning operations on the processing chamber 100.

[0108] This disclosure takes into account that, if in Figure 9F If the inert gas IG1 does not flow out from the second inert flow controller 705, then... Figure 9G The second inert gas valve 715 can be opened to direct inert gas IG1 to the second supply line 713. Figure 9G In the middle, the inert gas IG1 flowing out from the first inert flow controller 725 flows to the ventilation duct 164.

[0109] After the etching process and / or cleaning operation is completed, in one or more embodiments, the second gas SG1 can be switched back through the vent outlet 153 and undergo a fourth stabilization procedure before being shut off via the second supply valve 319 when the fourth stabilization condition is met. The inert gas IG1 can also be shut off after a period of time.

[0110] Although it is displayed as off, Figure 9F and Figure 9G In this process, the flow of inert gas IG1 from the second inert flow controller 705 can be turned on or off.

[0111] like Figure 7Aand Figures 9A-9G As shown, the reaction gases (such as the first gas FG1 and the second gas SG1) are stabilized before flowing downstream of the corresponding first flow controller 701 or second flow controller 703 (both of which can be used as flow ratio controllers). In one or more embodiments, the first gas FG1 and the second gas SG1 are supplied to the processing chamber 100 via a common gas line 675.

[0112] Figure 10 It includes according to one or more embodiments. Figures 9A-9G The schematic block diagram view of the process method 1000 shown.

[0113] In operation 1001, inert gas is introduced into processing space 136. Inert gas is introduced into gas line 675. Figure 9A Operation 1001 is described further.

[0114] In operation 1002, the first reactant gas is flowed through ventilation duct 164. The first gas flow is then stabilized to meet the stabilization conditions. Figure 9B Operation 1002 is described further.

[0115] In operation 1003, a first reactive gas is introduced into the processing space 136. The first gas performs a deposition process on the substrate 102. Figure 9C Operation 1003 is described further.

[0116] In optional operation 1004, the first reactant gas is flowed through ventilation duct 164. The first gas flow is then stabilized to satisfy the second stabilization condition. Figure 9D Operation 1004 is described further.

[0117] In optional operation 1005, the flow of the first reacting gas is stopped. After the second stability condition is met, the first gas is shut off by closing the first supply valve 707. Figure 9D Operation 1005 is described further.

[0118] In optional operation 1006, inert gas is flowed into processing space 136. Figure 9E Operation 1006 is further described. For example, if the inert gas flow from operation 1001 continues to flow, operation 1006 can be omitted.

[0119] In optional operation 1007, the second reactant gas is flowed through ventilation duct 164. The flow rate of the second reactant gas is then stabilized to satisfy the third stability condition. Figure 9F Operation 1007 is described further.

[0120] In optional operation 1008, a second reactive gas is introduced into the processing space 136. The second reactive gas can be used to perform etching processes on the substrate 102 and / or cleaning processes on the processing chamber 100. Figure 9G Operation 1008 is described further.

[0121] This disclosure takes into account that one or more operations of method 1000 may be omitted. For example, operation 1004 may be omitted from method 1000.

[0122] Figure 11 This is a partial schematic diagram of a gas path 1100 according to one or more embodiments. Gas path 1100 is similar to gas path 700. Gas path 1100 may be used in place of gas path 300, or may be combined with gas path 300. The gas panel 651 of gas path 700 is replaced by an injection manifold 1150 in gas path 1100. A valve assembly 750 is included within the injection manifold 1150. Gas path 1100 includes a main flow controller 1101. The main flow controller 1101 can supply a first gas FG1. The main flow controller 1101 is connected to a main valve 1103. The main valve 1103 is connected to a main gas line 1104. The main valve 1103 can start and stop the flow of the first gas FG1 into the main gas line 1104. The main gas line 1104 is connected to a plurality of first flow controllers 701 and a first supply line 709. Gas path 1100 includes a clean flow controller 1105. Cleaning flow controller 1105 supplies cleaning gas to second flow controller 703. The cleaning gas can be used to purify and / or clean the treatment chamber 100. The cleaning gas can include, for example, hydrochloric acid (HCl), chlorine, and / or nitrogen. In one or more embodiments, the cleaning gas comprises chlorine (Cl2) suspended in a carrier gas comprising nitrogen (N2). In one or more embodiments, the cleaning gas flows at a cleaning temperature in the range of 400°C to 1,200°C. In one or more embodiments, the cleaning temperature is in the range of 400°C to 800°C. In one or more embodiments, the cleaning temperature is in the range of 1,000°C to 1,200°C. This disclosure considers that the cleaning gas described herein can be used as an etchant gas, and / or the etchant gas described herein can be used as a cleaning gas. Cleaning flow controller 1105 is connected to cleaning valve 1107. Cleaning valve 1107 is connected to second flow controller 703 via cleaning gas line 1109. The cleaning valve 1107 starts and stops the flow of cleaning gas into the second flow controller 703.

[0123] This disclosure takes into account that the first inertial flow controller 725 and the first inertial valve 735 can be omitted, and gas IG1 can be supplied to one or more first flow controllers 701 through the main flow controller 1101.

[0124] Figure 12 According to one or more embodiments Figure 11 The diagram shows a side view of the gas passage 1100. Figure 12 The orientation of the gas path 1100 when installed in the processing chamber 100 is shown. In one or more embodiments, the first and second flow controllers 701, 703 are coupled together in an alternating arrangement. In one or more embodiments, one or more valve assemblies 750 are coupled to a corresponding first flow controller 701 and a corresponding second flow controller 703.

[0125] Figure 13 This is a partial schematic diagram of a gas path 1300 according to one or more embodiments. The gas path 1300 may be used in place of or combined with the gas path 300. The gas path 1300 includes a gas panel 651 and an injection manifold 1350. The injection manifold 1350 is similar to the injection manifold 1150 of the gas path 1100. The gas panel 651 includes a manifold flow valve 1301, a pressure transducer 1322 for measuring the pressure of the main flow line 1104, a main flow controller 1101, a clean supply flow controller 1105, a first inertial flow controller 725, a second inertial flow controller 705, a first ventilation assembly 1309, and a second ventilation assembly 1311. Ventilation assemblies 1309 and 1311 each include a ventilation flow controller and a downstream ventilation valve, operable to discharge a corresponding first gas FG1 or second gas SG1. The first ventilation assembly 1309 and the second ventilation assembly 1311 are attached to the upstream duct 1313. Manifold flow valve 1301, main valve 1321, and main flow controller 1101 are connected to main gas line 1104. Clean gas flow controller 1105 and first inertial flow controller 705 are connected to clean gas line 1109. Valve assembly 750 is oriented to allow first gas to flow to first ventilation assembly 1309 and second gas to flow to second ventilation assembly 1311 along two ventilation lines.

[0126] This disclosure takes into account that the first inertial flow controller 725 and the first inertial valve 735 can be omitted, and gas IG1 can be supplied to one or more first flow controllers 701 through the main flow controller 1101.

[0127] Figures 14A-14B This is a side view schematic diagram of a portion of an air passage 1300 according to one or more embodiments. Figure 14B yes Figure 14A The right view of the view shown. Figure 14A The injection manifold 1350 of the gas path 1300 is shown. Figure 14B The orientation of the gas path 1300 is shown when it is mounted on the processing chamber 100 and connected to the injector 112.

[0128] Figure 15This is a partial schematic diagram of an air passage 1500 according to one or more embodiments. Air passage 1500 may be used in place of air passage 300, or may be combined with air passage 300. Air passage 1500 is similar to air passage 700, and has a main flow controller 1101 and a cleaning flow controller 1105 of air passage 1100.

[0129] like Figure 15 As shown, the cleaning flow controller 1105 and the cleaning valve 1107 are connected to the cleaning gas line 1109. This disclosure considers that the first inertial flow controller 725 and the first inertial valve 735 can be omitted, and gas IG1 can be supplied to one or more first flow controllers 701 via the main flow controller 1101. In one or more embodiments, the respective first valve 760A and the respective first supply valve 707 of the valve assembly 750 are held in the same operating position, such that the respective first valve 760A and the respective first supply valve 707 are held in the same closed position or the same open position.

[0130] Figure 16 According to one or more embodiments Figure 13 A side view of a portion of the gas path 1300 shown. Figure 16 The orientation of the gas path 1300, which is mounted on the processing chamber 100 (e.g., connected to the injector 112), is shown.

[0131] Figure 17 This is a schematic diagram of a valve assembly 1750 according to one or more embodiments. The valve assembly 1750 can be used to replace one or more of the valve assemblies 750 described above.

[0132] Valve assembly 1750 is connected to third supply line 1709. Valve assembly 1750 includes a third valve 760G that can supply third gas TG1 to injector 112, and a third ventilation valve 760H that can direct third gas TG1 to ventilation line 164.

[0133] In one or more embodiments, each of the valve assemblies 750 can switch between flowing a first gas FG1, a second gas SG1, and a third gas TG1. The third gas TG1 can be a deposition gas, a cleaning gas, or an etchant gas, and its composition differs from that of the first gas FG1 and the second gas SG1.

[0134] Figure 18 This is a schematic diagram of a valve assembly 1850 according to one or more embodiments. Valve assembly 1850 can be used to replace one or more of the valve assemblies 750 described above. Valve assembly 1850 is similar to... Figure 7C The valve assembly 770 shown includes one or more aspects, features, components, operations, and / or characteristics thereof.

[0135] In valve assembly 1850, a first inert gas valve 760E receives gas from a first inert flow controller 725, and a second inert gas valve 760F receives gas solely from a second inert flow controller 705.

[0136] In valve assembly 1850, first ventilation valve 760C directs gas to first ventilation assembly 1309, and second ventilation valve 760D directs gas to second ventilation assembly 1311 separately.

[0137] The various flow controllers described herein (including flow ratio controllers and / or supply flow controllers) can be quality flow controllers. As described herein, at least some of the quality flow controllers can be used as flow ratio controllers.

[0138] This disclosure takes into account that the connections mentioned herein can be fluid connections and / or mechanical connections. This disclosure also takes into account that the connections mentioned herein can be direct or indirect (e.g., via other components, such as other piping or valves).

[0139] This disclosure takes into account that the valve described herein may be a pneumatic valve, for example.

[0140] Advantages of this disclosure include the ability to stabilize gas flow rates by rapidly switching the flow path of the reactant gas before and / or after it enters the processing space 136. The gas path facilitates rapid switching between processes and / or formulations, thereby reducing uptime, gas consumption, and increasing throughput. The gas path allows the use of gases that might otherwise conflict during adjacent processes. For example, this disclosure can save on the cost of using additional chambers for processing. As another example, the gas path implementation of this disclosure can be used to modify various chambers (e.g., chambers including those in the operating area), reducing modifications due to the modularity of the implementation. As an additional example, the gas path is simple and uses simple operational controls.

[0141] This disclosure takes into account that the gas path described herein can be used with respect to various other chambers, such as atomic layer deposition chambers and / or plasma chambers, for example.

[0142] Considering that one or more aspects disclosed herein can be combined. For example, one or more aspects, features, components, operations, and / or characteristics of processing chamber 100, gas path 300, gas path 700, gas path 1100, gas path 1300, gas path 1500, gas panel 151, gas panel 651, injection manifold 1150, method 500, and / or method 1000 can be combined. Furthermore, considering that one or more aspects disclosed herein may include some or all of the advantages described above.

[0143] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from its essential scope, the scope of which is defined by the appended claims.

Claims

1. A gas path, the gas path comprising: One or more first flow ratio controllers, the first flow ratio controllers being operable to control the flow rate of the first gas; A plurality of first valves, the plurality of first valves being operable to open and close the flow rate of the first gas; One or more second flow ratio controllers, the second flow ratio controllers being operable to control the flow rate of the second gas; A plurality of second valves, operable to open and close the flow rate of the second gas; The first set of gas lines is connected to the first flow ratio controller; and The second set of gas lines is connected to the second flow ratio controller.

2. The air passage as claimed in claim 1, wherein the air passage further comprises a plurality of ventilation valves connected to a plurality of ventilation ducts.

3. The gas path of claim 2, wherein the first valve is operable to flow the first gas to the first set of gas lines when open, and to flow the first gas to the ventilation line when closed.

4. The gas path of claim 3, wherein the second valve is operable to flow the second gas to the second set of gas lines when open, and to flow the second gas to the ventilation line when closed.

5. The gas path as described in claim 1, wherein the gas path further comprises: A gas panel, operable to provide the first gas and the second gas, the gas panel comprising... One or more first supply flow controllers, the first supply flow controllers being operable to supply the first gas; One or more second supply flow controllers, operable to supply the second gas. One or more first supply valves, the first supply valves being disposed between the one or more first flow ratio controllers and the one or more first supply flow controllers, and One or more second supply valves are disposed between the one or more second flow ratio controllers and the one or more second supply flow controllers.

6. The gas path as described in claim 1, wherein: The plurality of first valves and the one or more first flow ratio controllers are disposed within the panel housing of the gas panel; and The plurality of second valves and the one or more second flow ratio controllers are disposed outside the panel housing of the gas panel.

7. The gas path as described in claim 4, wherein the first group of gas pipelines and the second group of gas pipelines each comprise five gas pipelines.

8. A processing chamber, the processing chamber comprising: A processing space, which is at least partially defined by a chamber body; An injector operable to inject a first gas and a second gas into multiple regions of the processing space; A first set of gas lines, operable to supply the first gas to the injector; A second set of gas lines, operable to supply the second gas to the injector; Gas panel, the gas panel comprising: One or more first supply flow controllers, the first supply flow controllers being operable to supply the first gas; One or more second supply flow controllers, the second supply flow controllers being operable to supply the second gas; One or more first flow ratio controllers, operable to control the flow rate of the first gas received from the one or more first supply flow controllers, the first flow ratio controllers being disposed between the first set of gas lines and the one or more first supply flow controllers; and One or more second flow ratio controllers, operable to control the flow rate of the second gas received from the one or more second supply flow controllers, the second flow ratio controllers being disposed between the second set of gas lines and the one or more second supply flow controllers.

9. The processing chamber of claim 8, wherein the processing chamber further comprises a plurality of ventilation valves connected to a plurality of ventilation ducts.

10. The processing chamber of claim 9, further comprising a plurality of first valves connected to the first set of gas lines, wherein the first valves are operable to flow the first gas to the first set of gas lines when open and to flow the first gas to the ventilation line when closed.

11. The processing chamber of claim 9, further comprising a plurality of second valves connected to the second set of gas lines, wherein the second valves are operable to flow the second gas to the second set of gas lines when open and to flow the second gas to the ventilation line when closed.

12. The processing chamber of claim 8, wherein the first group of gas lines and the second group of gas lines each comprise five gas lines.

13. A method for using a pneumatic path in a processing chamber, the method comprising: Inert gas flows into the processing space of the processing chamber through the first set of gas pipelines; The first gas is flowed through the ventilation duct until the stability condition is met; and When the stability condition is met, the first gas is switched to flow through the first set of gas pipelines, while the inert gas flows into the processing space of the processing chamber through the first set of gas pipelines.

14. The method of claim 13, wherein the first gas comprises one or more of silicon or germanium.

15. The method of claim 13, further comprising: The first gas is switched to flow through the ventilation duct until the second stability condition is met; When the second stability condition is met, the flow rate of the first gas is stopped; The inert gas flows into the processing space of the processing chamber through the second set of gas pipelines; The second gas is circulated through the ventilation duct until the third stability condition is met; and When the third stability condition is met, the second gas is switched to flow through the second set of gas pipelines and into the processing space, while the inert gas flows into the processing space of the processing chamber through the second set of gas pipelines.

16. The method of claim 15, wherein the second gas comprises chlorine.

17. The method of claim 13, wherein the stabilization condition includes reaching a first flow rate of the first gas and maintaining the first flow rate within a first range for a first time period.

18. The method of claim 15, wherein the third stabilization condition includes reaching a second flow rate of the second gas and maintaining the second flow rate within a second range for a second time period.

19. The method of claim 13, wherein the first gas is flowed into the processing space to deposit a film on a substrate disposed in the processing space.

20. The method of claim 15, wherein the second gas is flowed into the processing space to etch the substrate or clean the processing space.

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