Tail gas consumption cooling structure of chemical vapor deposition equipment

Abstract

The invention relates to a tail gas consumption cooling structure of chemical vapor deposition equipment, and relates to the technical field of chemical vapor deposition equipment manufacturing. The heating assembly comprises a heater and an exhaust pipe abutting against the heater, the heater abuts against the outer side face of the graphite box, and the exhaust pipe is communicated with the reaction cavity; the internal consumption assembly is located on the side, close to the heating assembly, of the reaction cavity and comprises a plurality of pore plates arranged at intervals, each pore plate is provided with an air inlet hole, the diameter of each air inlet hole is gradually reduced in the direction close to the heating assembly, and the air inlet holes are arranged in a staggered mode; the cooling assembly comprises a cooling box, a cooling layer and a vacuum chamber, the cooling box communicates with the exhaust pipe, the vacuum chamber wraps the cooling box, and the cooling layer is located in the vacuum chamber and abuts against the outer side face of the cooling box; therefore, the problems of potential safety hazards of combustion and explosion and pipeline blockage caused by direct emission of incomplete reaction gas and by-product gas of traditional equipment are effectively solved.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition equipment manufacturing technology, and in particular to a cooling structure for exhaust gas consumption in chemical vapor deposition equipment. Background Technology

[0002] Chemical vapor deposition (CVD) is a process of growing a coating on the surface of a solid material through a high-temperature chemical reaction. The resulting coating exhibits excellent high-temperature mechanical properties, good chemical stability, and corrosion resistance. However, traditional silicon carbide coating CVD equipment typically discharges unreacted process gases and byproduct gases directly into the exhaust gas treatment equipment. These unreacted gases and byproduct gases adhere to the inner walls of the exhaust gas treatment equipment's pipes, posing safety hazards such as combustion and explosion, as well as increasing maintenance costs due to solid matter clogging the pipes. Furthermore, the reaction temperature of silicon carbide coating CVD equipment is usually above 1000℃, and the equipment discharges a large amount of high-temperature gas during operation. Prolonged exposure of the pipes to this high-temperature environment poses a risk of decreased or even complete loss of pipe sealing, leading to product failure. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to overcome the safety hazards of combustion and explosion and pipeline blockage caused by the direct emission of incompletely reacted gases and by-product gases in the existing equipment, thereby providing a tail gas consumption cooling structure for chemical vapor deposition equipment.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: A tail gas cooling structure for a chemical vapor deposition (CVD) equipment, used to treat the tail gas generated by the CVD equipment, comprising: The graphite box contains a reaction chamber. The heating assembly includes a heater and an exhaust pipe abutting against the heater, the heater abutting against the outer side of the graphite box, and the exhaust pipe communicating with the reaction chamber; An internal consumable component, located on the side of the reaction chamber near the heating component, includes multiple spaced perforated plates, each of which has an air inlet. The diameter of each air inlet gradually decreases along the direction near the heating component, and the air inlets are staggered. The cooling assembly includes a cooling box, a cooling layer, and a vacuum chamber. The cooling box is connected to the exhaust pipe, the vacuum chamber covers the outside of the cooling box, and the cooling layer is located inside the vacuum chamber and abuts against the outer side of the cooling box. The vacuum chamber is connected to the reaction chamber.

[0005] Preferably, the cooling assembly further includes a first baffle plate disposed inside the cooling box and close to the exhaust pipe. The first baffle plate is provided with a plurality of first exhaust ports, which are staggered with the exhaust pipe. When the unreacted gas from chemical vapor deposition and the by-product gas produced by the reaction enter the cooling box, they first come into contact with the first baffle plate and then diffuse to both sides, entering the cooling box from the first exhaust ports. This reduces the exhaust gas velocity and increases the residence time of the exhaust gas in the cooling box, thereby achieving a better heat dissipation effect.

[0006] Preferably, the cooling assembly further includes a second baffle plate, which is disposed at a distance from the first baffle plate within the cooling box. The second baffle plate is provided with a second exhaust port, which is located on one side of the second baffle plate. Unreacted gases from chemical vapor deposition and byproduct gases from the reaction come into contact with the second baffle plate through multiple first exhaust ports. The second baffle plate ensures that unreacted gases from chemical vapor deposition and byproduct gases from the reaction can only enter through the second exhaust port, thereby increasing the flow time of the exhaust gas and improving the heat dissipation efficiency of the exhaust gas.

[0007] Preferably, the cooling assembly further includes multiple third baffles, which are spaced apart from the second baffle within the cooling box. Each third baffle has a third exhaust port, positioned away from the second exhaust port. The second and third baffles form a meandering flow path. Unreacted gases from chemical vapor deposition and byproduct gases from the reaction enter through the second exhaust port and flow into the exhaust channel between the second and third baffles, increasing the flow time of the exhaust gas and thus improving its heat dissipation efficiency. The third exhaust ports are located on the same side, ensuring the unobstructed flow of the entire exhaust channel and preventing a decrease in flow rate and exhaust gas accumulation due to a sharp increase in flow resistance. According to fluid mechanics principles, if a blockage occurs downstream, the exhaust gas flow rate will decrease, causing a sharp increase in pressure in the upstream pipeline. When this pressure exceeds the pressure in the reaction chamber, pressure reversal will occur, causing dangerous backflow of gas. Therefore, this structure effectively controls the system pressure and protects the sealing of the exhaust pipeline by ensuring smooth flow and sufficient cooling of the exhaust gas, thereby preventing backflow of exhaust gas.

[0008] Preferably, the cooling assembly further includes a cover plate, which is spaced apart from the third baffle plate. The cover plate is fixed to the side of the cooling box away from the exhaust pipe, and the cover plate abuts against the cooling layer. The cover plate and the third baffle plate form an exhaust channel. The cover plate is fixed to the cooling box to form a closed cooling environment. The cover plate abuts against the cooling layer, which can absorb a large amount of heat in the exhaust gas.

[0009] Preferably, the cooling assembly further includes an exhaust pipe, which is fixed to the outside of the cooling box and abuts against the end of the third baffle away from the third exhaust port. The exhaust pipe also abuts against the cooling layer. The cooled exhaust gas is discharged from the exhaust pipe, which abuts against the cooling assembly to avoid the problem of reduced sealing of the exhaust pipe due to high temperature. The third exhaust port is located away from the exhaust pipe to ensure that the exhaust gas can stay in the cooling box for a longer time to achieve the purpose of heat dissipation.

[0010] Preferably, the exhaust gas cooling structure of the chemical vapor deposition equipment further includes a heat insulation layer, which abuts against the heater and the exhaust pipe; it stabilizes the temperature of the chemical vapor deposition reaction zone and prevents high-temperature radiation from directly contacting the molten steel plate in the vacuum chamber.

[0011] Preferably, the cooling box has multiple mounting holes on the side away from the cover plate, and multiple exhaust pipes are fixed to the multiple mounting holes, with one end of each exhaust pipe threadedly connected to a mounting nut; when an exhaust pipe is damaged or needs cleaning, it can be replaced individually simply by loosening the mounting nut, without disassembling the entire cooling box, which significantly reduces maintenance difficulty and downtime, and improves the maintainability and operating efficiency of the equipment.

[0012] Preferably, multiple exhaust pipes are provided, with one end of each exhaust pipe passing through the graphite box; this can reduce the exhaust gas velocity to a certain extent and prolong the time the exhaust gas stays in the high-temperature zone. On the one hand, this can improve the reaction efficiency of trichloromethylsilane and hydrogen; on the other hand, the temperature at the exhaust pipe is higher than the temperature inside the reaction chamber, allowing the undecomposed hydrogen chloride in the reaction chamber to continue to decompose.

[0013] Preferably, the internal consumable component includes multiple limiting sleeves, and the orifice plate is provided with multiple fixing holes. The limiting sleeves abut against the fixing holes. The cooperation between the limiting sleeves and the fixing holes can control the distance between the orifice plates and prevent the orifice plates from shifting under high temperature or pressure changes, thereby ensuring that the staggered arrangement of the air inlet holes and the gradually decreasing diameter design can be effectively implemented.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: The above-described technical solution provides a tail gas consumption cooling structure for a chemical vapor deposition (CVD) apparatus, comprising a graphite box, a heating assembly, an internal consumption assembly, and a cooling assembly. The graphite box contains a reaction chamber. The heating assembly includes a heater and an exhaust pipe abutting against the heater. The heater abuts against the outer side of the graphite box, and the exhaust pipe communicates with the reaction chamber. The heater heats the reaction chamber to 1000°C, providing the necessary temperature environment for the CVD reaction, and also heats the exhaust pipe. The internal consumption assembly, located on the side of the reaction chamber near the heating assembly, consists of multiple spaced perforated plates, each with an air inlet. The diameter of each air inlet gradually decreases along the direction approaching the heating assembly, and the air inlets are staggered to reduce the flow rate of the CVD reaction gas and increase the carbonization of the reaction products. The silicon adhesion area is increased, and the flow rate of byproducts generated by chemical vapor deposition is reduced, allowing them to decompose as much as possible in a high-temperature environment. The cooling assembly includes a cooling box, a cooling layer, and a vacuum chamber. The cooling box is connected to the exhaust pipe, the vacuum chamber covers the outside of the cooling box, the cooling layer is located inside the vacuum chamber and abuts against the outer side of the cooling box, and the vacuum chamber is connected to the reaction chamber, absorbing at least some of the heat from unreacted gases and byproduct gases. This effectively solves the safety hazards of combustion and explosion and pipeline blockage caused by the direct emission of unreacted gases and byproduct gases in traditional equipment, improving the safety and reliability of the equipment. Attached Figure Description

[0015] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0016] Figure 1 A schematic diagram of the cooling structure of a chemical vapor deposition apparatus provided for an embodiment of the present invention; Figure 2 A schematic diagram of an orifice plate provided for an embodiment of the present invention; Figure 3 Exploded view of an orifice plate provided for an embodiment of the present invention; Figure 4 A schematic diagram of a cooling assembly provided for an embodiment of the present invention; Figure 5 An exploded view of a cooling assembly provided for an embodiment of the present invention.

[0017] Explanation of reference numerals in the attached figures: 1. Graphite box; 11. Reaction chamber; 2. Heating assembly; 21. Heater; 22. Exhaust pipe; 3. Internal consumable assembly; 31. Orifice plate; 32. Air inlet; 33. Fixing hole; 34. Limiting sleeve; 4. Cooling assembly; 41. Cooling box; 42. Cooling layer; 43. Vacuum chamber; 44. First baffle plate; 441. First exhaust port; 45. Second baffle plate; 451. Second exhaust port; 46. Third baffle plate; 461. Third exhaust port; 47. Cover plate; 48. Mounting nut; 49. Exhaust pipe; 5. Insulation layer. Detailed Implementation

[0018] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0020] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0021] Please refer to the following carefully. Figures 1 to 5This invention provides a tail gas cooling structure for chemical vapor deposition (CVD) equipment, used to treat the tail gas generated by the CVD equipment. Before understanding this solution, the following knowledge is required: Chemical vapor deposition (CVD) is a process of growing a coating layer on the surface of a solid material through a high-temperature reaction. The high temperature needs to reach above 1000℃. The solid material can be a material resistant to 1000℃, such as graphite, graphene, or carbon fiber. The grown coating is a silicon carbide coating. CVD can use trichloromethylsilane and hydrogen as raw materials. Trichloromethylsilane is an organosilicon compound that is liquid at room temperature. One molecule of trichloromethylsilane simultaneously contains the silicon source, carbon source, and chlorine element required for silicon carbide deposition. In this reaction, hydrogen is present as a carrier.

[0022] Liquid trichloromethylsilane is heated and vaporized through a bubbler or evaporator, then carried by a carrier into the high-temperature reaction chamber 11, ultimately reaching the surface of the heated substrate. A surface chemical reaction typically occurs at high temperatures of 1000℃ to 1300℃, where trichloromethylsilane molecules undergo a reduction reaction with hydrogen on the substrate surface. The overall chemical reaction equation can be simplified to: Trichloromethylsilane + Hydrogen → Silicon Carbide + Hydrogen Chloride. As trichloromethylsilane molecules "arrive" at the substrate surface, hydrogen molecules also "arrive" and begin to "steal" chlorine atoms from the trichloromethylsilane. The hydrogen and chlorine atoms combine to generate gaseous hydrogen chloride. During this process, after the chlorine atoms are "stripped" from the trichloromethylsilane molecules, the remaining silicon and carbon atoms combine on the surface to form solid silicon carbide. The solid silicon carbide adheres to the surface of the solid material. Unreacted raw material gases and the generated hydrogen chloride are directly discharged into the exhaust gas treatment equipment, potentially causing hazardous gases to adhere to the pipelines of the exhaust gas treatment equipment and posing an explosion risk. The exhaust gases that need to be treated include unreacted trichloromethylsilane and hydrogen, as well as hydrogen chloride produced by the reaction.

[0023] Please read carefully. Figure 1 The exhaust gas cooling structure of the chemical vapor deposition (CVD) equipment includes a graphite box 1, a heating assembly 2, an internal consumption assembly 3, and a cooling assembly 4. Specifically, the graphite box 1 has a reaction chamber 11 inside, providing space for the CVD reaction. The heating assembly 2 includes a heater 21 and an exhaust pipe 22 that abuts against the heater 21. The heater 21 abuts against the outer side of the graphite box 1, and the exhaust pipe 22 is connected to the reaction chamber 11. The graphite box 1 has extremely excellent thermal conductivity. The heater 21 heats the graphite box 1, and the heat is rapidly transferred through the graphite box 1 to the reaction chamber 11, raising the temperature inside the reaction chamber 11 to 1000°C. The heater 21 abuts against multiple exhaust pipes 22, so the temperature inside the exhaust pipes 22 is higher than the temperature inside the reaction chamber 11. Trichloromethylsilane and hydrogen react in the reaction chamber 11, and the generated hydrogen chloride decomposes at high temperatures. When the hydrogen chloride reaches the exhaust pipes 22, it decomposes more easily than it does inside the reaction chamber 11.

[0024] Please read carefully. Figures 1 to 3 The internal consumable component 3 is located on the side of the reaction chamber 11 near the heating component 2, and includes multiple perforated plates 31, multiple limiting sleeves 34, and multiple fixing screws. The material of the perforated plates 31 can be graphite, graphene, carbon fiber, etc. The multiple perforated plates 31 are spaced apart, and multiple air inlets 32 are provided on the multiple perforated plates 31. The diameter of the air inlets 32 on the perforated plates 31 is the same, and the air inlets 32 between the multiple perforated plates 31 are staggered. Along the direction near the heating component 2, the diameter of each air inlet 32 ​​gradually decreases, and the distance between each perforated plate 31 gradually increases. The multiple limiting sleeves 34 are fixedly installed. The limiting sleeve 34 is threadedly connected to the fixing screw and placed between multiple orifice plates 31. The multiple limiting sleeves 34 and multiple fixing screws are used together to make the multiple orifice plates 31 become a whole. The staggered arrangement of the air inlet holes 32 on the multiple orifice plates 31 reduces the flow rate of unreacted gas. Unreacted gas includes trichloromethylsilane and hydrogen. This increases the reaction time of chemical vapor deposition and improves the utilization rate of trichloromethylsilane and hydrogen, thereby reducing the amount of unreacted gas discharged to the exhaust pipe 49. In addition, the cooled exhaust gas is less likely to adhere to the inner wall of the exhaust pipe 49.

[0025] Please read carefully. Figure 4 and Figure 5 The cooling assembly 4 includes a cooling box 41, a cooling layer 42, and a vacuum chamber 43. The cooling box 41 is connected to the exhaust pipe 22. The vacuum chamber 43 covers the cooling box 41, and a valve is installed on the outside of the vacuum chamber 43. The valve is opened when a vacuum is drawn and closed after the vacuum is drawn. The cooling layer 42 is located inside the vacuum chamber 43 and abuts against the outer side of the cooling box 41. A continuously flowing cooling liquid is introduced into the cooling layer 42 located on the outside of the cooling box 41. Utilizing the principle of forced convection heat transfer, the cooling liquid is circulated within the jacket by a pump or other driving device, which can continuously flush away and remove heat from the outer wall of the cooling box 41. Compared with static coolant, this flow design can effectively disrupt and thin the stable thermal boundary layer formed on the heat exchange surface, so that a high temperature gradient is always maintained between the wall of the cooling box 41 and the cooling liquid, thereby improving the surface heat transfer coefficient and the overall heat exchange efficiency. Therefore, the flowing cooling liquid can absorb the heat transferred from the high-temperature exhaust gas to the cooling box 41 more quickly and effectively, ensuring that the exhaust gas is fully cooled before being discharged, thereby significantly improving the protection effect of the seal of the exhaust pipe 49 and ensuring the stability and safety of the equipment operation.

[0026] Vacuum chamber 43 is connected to reaction chamber 11. A vacuum pump removes air, water vapor, and other impurity molecules from reaction chamber 11, creating a near-absolute vacuum, highly pure "blank" environment, providing the necessary cleanliness foundation for subsequent processes. Simultaneously, this near-zero pressure baseline allows for precise gas injection into reaction chamber 11 via a high-precision mass flow controller, enabling extremely accurate setting and maintenance of the specific pressure required for the chemical reaction.

[0027] An internal consumable component 3 is installed in a conventional chemical vapor deposition equipment. Specifically, the internal consumable component 3 is installed in the reaction chamber 11, multiple orifice plates 31, and multiple orifice plates 31 with staggered air inlets 32, to reduce the flow rate of trichloromethylsilane and hydrogen, increase the reaction adhesion area, and improve the utilization rate of trichloromethylsilane and hydrogen. At a high temperature of 1000℃, trichloromethylsilane and hydrogen react chemically to generate silicon carbide, which at least partially adheres to multiple perforated plates 31. At the same time, gases including hydrogen chloride are also generated. Therefore, the arrangement of multiple perforated plates 31 allows the hydrogen chloride gas to remain in the high-temperature environment for as long as possible, thereby enabling the hydrogen chloride gas to decompose at least partially. The unreacted trichloromethylsilane and hydrogen, as well as the hydrogen chloride gas that has not been decomposed at high temperature, enter the cooling component 4. The exhaust ports on the multiple baffles are staggered to form an exhaust passage, increasing the residence time of the exhaust gas in the cooling component 4 and reducing at least part of the heat. This prevents the exhaust pipe 49 from becoming less airtight due to prolonged exposure to high temperatures, or even losing its airtightness and causing structural failure.

[0028] Please read carefully. Figure 5 The cooling assembly 4 includes a first baffle plate 44 and a second baffle plate 45, which are spaced apart within the cooling box 41. The first baffle plate 44 is positioned close to the exhaust pipe 22, and has multiple first exhaust ports 441. Each first exhaust port 441 is at least partially located between any two exhaust pipes 22. When exhaust gas enters the cooling box 41 from the exhaust pipe 22, it first collides with the first baffle plate 44 and then slowly diffuses towards the first exhaust ports 441, reducing the exhaust gas flow. The second baffle plate 45 is provided with a second exhaust port 451, which is located on one side of the second baffle plate 45. Unreacted trichloromethylsilane and hydrogen, as well as hydrogen chloride gas that has not been decomposed at high temperature, are discharged from multiple exhaust pipes 22. The arrangement of multiple exhaust pipes 22 can reduce the speed of exhaust gas flow. The exhaust gas first enters the cooling box 41 from the first exhaust port 441, and then moves towards the second exhaust port 451. The exhaust gas diffuses along the exhaust channel, and the cooling layer 42 absorbs at least part of the heat.

[0029] Please read carefully. Figure 5The cooling assembly 4 also includes multiple third baffles 46, which are positioned close to the second baffle 45. The third baffles 46 are spaced apart from each other and from the second baffle 45 within the cooling box 41. Each third baffle 46 has a third exhaust port 461, positioned away from the second exhaust port 451. A meandering exhaust channel is formed between the second baffle 45, the third baffles 46, and the multiple third baffles 46. This design increases the time the exhaust gas stays in the cooling box 41. The staggered arrangement of the second exhaust port 451 and the multiple third exhaust ports 461 forces most of the gas to complete the meandering exhaust channel, ensuring that the heat of the exhaust gas is fully absorbed. The third exhaust ports 461 on the multiple third baffles 46 are positioned on the same side within the cooling box 41. The key to this design is that it ensures the unobstructed flow of the entire exhaust channel, avoiding a decrease in flow rate and exhaust gas accumulation due to a sharp increase in flow resistance. According to fluid mechanics principles, if a blockage occurs downstream, the exhaust gas flow rate will decrease, causing a sharp increase in pressure in the upstream pipeline. When this pressure exceeds the pressure in reaction chamber 11, pressure reversal will occur, resulting in dangerous gas backflow. Therefore, this structure effectively controls the system pressure by ensuring smooth exhaust gas flow and sufficient cooling, thereby preventing exhaust gas backflow.

[0030] Please read carefully. Figure 5 The cooling assembly 4 also includes a cover plate 47, which is spaced apart from the third baffle plate 46 to form a tortuous exhaust channel that guides the high-temperature exhaust gas, forcing the gas to flow along a predetermined path, thereby extending the heat exchange time. The cover plate 47 is fixed to the end of the cooling box 41 away from the exhaust pipe 22, forming a closed cooling environment, which effectively prevents heat leakage and external airflow interference, and ensures the stability of the cooling process. The cover plate 47 directly abuts against the cooling layer 42. As the core heat exchange interface, it can quickly absorb the heat of the exhaust gas and efficiently transfer it to the cold water, thereby achieving rapid cooling of the high-temperature exhaust gas.

[0031] Please read carefully. Figure 5The cooling assembly 4 also includes an exhaust pipe 49, which is fixed to the outside of the cooling box 41, integrating cooling and sealing functions to achieve safe and efficient discharge of low-temperature exhaust gas. The exhaust pipe 49 abuts against the end of the third baffle plate 46 furthest from the third exhaust port 461, forming a smooth transition of gas from the cooling channel to the exhaust pipe 49, ensuring smooth airflow and avoiding local pressure buildup due to poor airflow. By directly abutting the exhaust pipe 49 against the outside of the cooling box 41 and the cooling layer 42, it becomes a continuously cooled component, ensuring that the exhaust gas, after being sufficiently cooled by the baffle plate, will not experience a temperature rebound during discharge, thus protecting the sealing performance and structural stability of the pipe material. Ultimately, this effectively solves the technical problems of high-temperature exhaust gas damaging pipe sealing and excessive pressure affecting normal equipment operation.

[0032] The exhaust gas cooling structure of the chemical vapor deposition equipment also includes an insulation layer 5, which abuts against the heater 21 and the exhaust pipe 22. Internally, the insulation layer 5 significantly reduces heat loss from the reaction chamber 11 through its high thermal resistance effect, ensuring a uniform and stable high-temperature environment for the chemical vapor deposition reaction. Externally, it acts as a key thermal insulation barrier, effectively blocking the large amount of heat radiation generated by the heater 21 above 1000℃, preventing it from directly acting on the metal of the vacuum chamber 43, thereby protecting the equipment structure and avoiding material strength reduction, deformation, or even melting due to local overheating, ensuring the long-term safety and reliability of the equipment operation.

[0033] Multiple exhaust pipes 22 are configured, with one end of each pipe passing through a graphite box 1. This arrangement disperses the exhaust gas flow, effectively dividing a concentrated gas flow into smaller streams. According to fluid mechanics principles, this effectively reduces the gas velocity within a single pipe, thus minimizing erosion and wear on the pipe's inner wall. More importantly, the dispersed exhaust method increases the contact area and interaction time between the exhaust gas and the orifice plate 31 in the internal consumable component 3, allowing unreacted gases more opportunities to continue reacting or decomposing in the high-temperature zone, thereby improving raw material utilization. Simultaneously, since the heater 21 is in contact with all multiple exhaust pipes 22, the temperature inside the exhaust pipes 22 is even higher than that in the reaction chamber 11. This creates more favorable conditions for the high-temperature decomposition of hydrogen chloride before it enters the cooling component 4, further reducing the emission of harmful substances.

[0034] Multiple mounting holes are provided on the side of the cooling box 41 away from the cover plate 47, and multiple exhaust pipes 22 are threadedly fixed to the mounting holes by mounting nuts 48. The threaded connection provides a solid mechanical fixation, ensuring the sealing between the exhaust pipes 22 and the cooling box 41 under high temperature and high pressure conditions, effectively preventing exhaust gas leakage; multiple mounting holes correspond one-to-one with multiple exhaust pipes 22, ensuring orderly airflow distribution and smooth entry into the cooling box 41, maintaining the hydrodynamic performance of the system design; this detachable connection method greatly facilitates the installation, maintenance and replacement of the equipment. When an exhaust pipe 22 is damaged or needs cleaning, it can be replaced individually simply by loosening the mounting nut 48, without disassembling the entire cooling box 41, significantly reducing maintenance difficulty and downtime, and improving the maintainability and operating efficiency of the equipment.

[0035] The design of multiple limiting sleeves 34 in the internal consumable component 3 abutting against the fixing holes 33 on the orifice plate 31 ensures that the key structure of the staggered arrangement and gradual diameter of the air inlet 32 ​​remains stable in a high-temperature environment, thereby effectively reducing the airflow velocity and extending the reaction time. At the same time, the cooperation between the limiting sleeves 34 and the fixing screws fastens multiple orifice plates 31 into a whole, significantly improving the structural rigidity and vibration resistance of the component, preventing performance degradation caused by component displacement, and realizing modular and convenient installation and disassembly, which greatly facilitates the maintenance and upkeep of the equipment.

[0036] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.

Claims

1. A tail gas cooling structure for a chemical vapor deposition (CVD) equipment, used to treat the tail gas generated by the CVD equipment, characterized in that, include: The graphite box (1) has a reaction chamber (11) inside. The heating assembly (2) includes a heater (21) and an exhaust pipe (22) that abuts against the heater (21). The heater (21) abuts against the outer side of the graphite box (1), and the exhaust pipe (22) is connected to the reaction chamber (11). The internal consumable component (3) is located on the side of the reaction chamber (11) near the heating component (2), and includes a plurality of spaced perforated plates (31). Each perforated plate (31) has an air inlet (32), and the diameter of each air inlet (32) gradually decreases along the direction near the heating component (2), and the air inlets (32) are staggered. The cooling assembly (4) includes a cooling box (41), a cooling layer (42), and a vacuum chamber (43). The cooling box (41) is connected to the exhaust pipe (22). The vacuum chamber (43) covers the outside of the cooling box (41). The cooling layer (42) is located inside the vacuum chamber (43) and abuts against the outer side of the cooling box (41). The vacuum chamber (43) is connected to the reaction chamber (11).

2. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 1, characterized in that, The cooling assembly (4) further includes a first baffle plate (44), which is disposed inside the cooling box (41) and is located close to the exhaust pipe (22). The first baffle plate (44) is provided with a plurality of first exhaust ports (441), which are staggered from the exhaust pipe (22).

3. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 2, characterized in that, The cooling assembly (4) further includes a second baffle plate (45), which is disposed at a distance from the first baffle plate (44) in the cooling box (41). The second baffle plate (45) is provided with a second exhaust port (451), which is disposed on one side of the second baffle plate (45).

4. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 3, characterized in that, The cooling assembly (4) further includes a plurality of third baffles (46), which are spaced apart from the second baffle (45) in the cooling box (41). The plurality of third baffles (46) are provided with third exhaust ports (461), which are located away from the second exhaust port (451).

5. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 4, characterized in that, The cooling assembly (4) also includes a cover plate (47), which is spaced apart from the third baffle plate (46). The cover plate (47) is fixed to the side of the cooling box (41) away from the exhaust pipe (22), and the cover plate (47) abuts against the cooling layer (42).

6. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 4, characterized in that, The cooling assembly (4) further includes an exhaust pipe (49), which is fixed to the outside of the cooling box (41) and abuts against the end of the third baffle (46) away from the third exhaust port (461). The exhaust pipe (49) abuts against the cooling layer (42).

7. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 5, characterized in that, The cooling box (41) has multiple mounting holes on the side away from the cover plate (47), and multiple exhaust pipes (22) are fixed to the multiple mounting holes, and one end of the multiple exhaust pipes (22) is threadedly connected to the mounting nut (48).

8. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 1, characterized in that, The exhaust gas cooling structure of the chemical vapor deposition equipment also includes a heat insulation layer (5), which abuts against the heater (21) and the exhaust pipe (22).

9. The exhaust gas cooling structure for chemical vapor deposition equipment according to claim 1, characterized in that, The exhaust pipe (22) is configured as a plurality of pipes, and one end of the plurality of exhaust pipes (22) passes through the graphite box (1).

10. The exhaust gas cooling structure for a chemical vapor deposition apparatus according to claim 1, characterized in that, The internal consumable component (3) includes multiple limiting sleeves (34), and the perforated plate (31) is provided with multiple fixing holes (33), and the limiting sleeves (34) abut against the fixing holes (33).

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