Signal transmission structure and its design methods, electronic devices

Abstract

A signal transmission structure and its design method, as well as an electronic device, include a substrate, a coplanar waveguide transmission layer, and at least one connection structure. The coplanar waveguide transmission layer is located on the substrate and includes a first ground electrode portion, a transmission portion, and a second ground electrode portion arranged sequentially at intervals. The connection structure is located on the side of the substrate near the coplanar waveguide transmission layer. A first end of each connection structure is electrically connected to the first ground electrode portion, and a second end of the connection structure opposite to the first end is electrically connected to the second ground electrode portion. The signal transmission structure also includes an insulating layer located on the substrate. At least a portion of the insulating layer is located between the connection structure and the transmission portion, so that the connection structure and the transmission portion are insulated from each other. The connection structure in this signal transmission structure can effectively reduce the potential difference between the first ground electrode portion and the second ground electrode portion, and the capacitance between the connection structure and the transmission portion is relatively large, thereby effectively reducing the characteristic impedance.

Description

Technical Field

[0001] At least one embodiment of this disclosure relates to a signal transmission structure and its design method, and an electronic device. Background Technology

[0002] A coplanar waveguide (CPW) is a microwave transmission line structure in which a central signal conductor strip is fabricated on the same plane of a dielectric substrate, and ground conductor planes are fabricated on both sides of it. This structure plays an important role in optoelectronic devices and radio frequency devices. Summary of the Invention

[0003] At least one embodiment of this disclosure provides a signal transmission structure, including: a substrate, a coplanar waveguide transmission layer, and at least one connection structure. The coplanar waveguide transmission layer is located on the substrate and includes a first ground electrode portion, a transmission portion, and a second ground electrode portion arranged sequentially at intervals. At least one connection structure is located on the side of the substrate near the coplanar waveguide transmission layer. A first end of each connection structure is electrically connected to the first ground electrode portion, and a second end of the connection structure opposite to the first end is electrically connected to the second ground electrode portion. The signal transmission structure further includes an insulating layer located on the substrate, with at least a portion of at least one insulating layer located between the connection structure and the transmission portion, such that the connection structure and the transmission portion are insulated from each other.

[0004] For example, according to at least one embodiment of the signal transmission structure provided in this disclosure, the first ground electrode portion, the transmission portion, and the second ground electrode portion are arranged sequentially in a first direction and all extend along a second direction. The first direction and the second direction are both parallel to the substrate and intersect each other. The connection structure is located on the side of the coplanar waveguide transmission layer away from the substrate, or the connection structure is located between the coplanar waveguide transmission layer and the substrate.

[0005] For example, according to at least one embodiment of the signal transmission structure provided in this disclosure, the connection structure is located on the side of the coplanar waveguide transmission layer away from the substrate. The transmission section includes a first sidewall facing the first ground electrode section and a second sidewall facing the second ground electrode section. The portion of the connection structure located between the first end and the second end includes a first sub-connection section, a second sub-connection section, and a third sub-connection section connected in sequence. The first sub-connection section is opposite to and spaced apart from the first sidewall. The second sub-connection section is opposite to and spaced apart from the surface of the transmission section away from the substrate. The third sub-connection section is opposite to and spaced apart from the second sidewall.

[0006] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, the portion of the connection structure in which the first sub-connection portion, the second sub-connection portion, and the third sub-connection portion are sequentially connected is cut by a plane with a cross-section that is U-shaped or C-shaped, the plane being perpendicular to the substrate and intersecting the second direction.

[0007] For example, according to at least one embodiment of the present disclosure, the signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures includes at least one group of connection structures, each group of connection structures including at least two connection structures arranged in an interleaved manner.

[0008] For example, according to at least one embodiment of the signal transmission structure provided in this disclosure, the at least two connection structures in the connection structure group include a first connection structure and a second connection structure, wherein the first connection structure and the second connection structure are centrally symmetrically distributed.

[0009] For example, in the signal transmission structure provided according to at least one embodiment of the present disclosure, the first connection structure and the second connection structure are disposed on the same layer.

[0010] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, in the second direction, the size of the first sub-connection portion and the size of the third sub-connection portion are both smaller than the maximum size of the second sub-connection portion.

[0011] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, at least a portion of the second sub-connector is wound in a helical shape.

[0012] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, at least a portion of the second sub-connection is sheet-like.

[0013] For example, according to at least one embodiment of the present disclosure, the signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures are spaced apart along the second direction. The coplanar waveguide transmission layer further includes a first conductive portion and a second conductive portion. The first ends of at least two connection structures are electrically connected through the first conductive portion, and the second ends of the at least two connection structures are electrically connected through the second conductive portion.

[0014] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, at least one of the first conductive portion and the second conductive portion is disposed in the same layer as the connection structure.

[0015] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, at least one of the first conductive portion and the second conductive portion is integrally formed with the connection structure.

[0016] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, the first conductive portion and the second conductive portion are staggered in the second direction.

[0017] For example, according to at least one embodiment of the present disclosure, the signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures are spaced apart along the second direction. The coplanar waveguide transmission layer further includes a first conductive portion and a second conductive portion. The first ends of at least two connection structures are electrically connected through the first conductive portion, and the second ends of at least two connection structures are electrically connected through the second conductive portion. The orthographic projection of the connection structure, the first conductive portion and the second conductive portion electrically connected to the connection structure on the substrate is "I".

[0018] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, the connection structure is located between the coplanar waveguide transmission layer and the substrate, and in the first direction, the maximum distance between the first end and the second end of the connection structure is greater than the distance between the first ground electrode portion and the second ground electrode portion.

[0019] For example, according to at least one embodiment of the signal transmission structure provided in this disclosure, the connection structure is located between the coplanar waveguide transmission layer and the substrate. The signal transmission structure further includes a plurality of connection portions. The insulating layer includes a plurality of vias. The plurality of connection portions are respectively located in the plurality of vias. The first end of the connection structure is electrically connected to the first ground electrode portion through one of the connection portions. The second end of the connection structure is electrically connected to the second ground electrode portion through another of the connection portions. The material of the connection portion is different from that of the coplanar waveguide transmission layer, or the material of the connection portion is the same as that of the coplanar waveguide transmission layer.

[0020] For example, in a signal transmission structure provided according to at least one embodiment of the present disclosure, the cross-section of the connecting portion cut by a plane has a first dimension in the first direction, the plane being perpendicular to the substrate and parallel to the first direction, and the connecting structure having a second dimension in a direction perpendicular to the substrate, wherein the first dimension is larger than the second dimension.

[0021] At least one embodiment of this disclosure provides an electronic device including the signal transmission structure provided in any embodiment of this disclosure.

[0022] At least one embodiment of this disclosure also provides a design method for a signal transmission structure, applicable to the signal transmission structure provided in any embodiment of this disclosure. The design method includes: adjusting the width of the connection structure and the thickness of the insulating layer so that the insertion loss, return loss, and characteristic impedance of the connection structure meet design requirements, wherein the width of the connection structure is the dimension of the connection structure in a direction perpendicular to its extension direction and the substrate. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure.

[0024] Figure 1 A schematic diagram of a signal transmission structure provided for at least one embodiment of this disclosure.

[0025] Figure 2 for Figure 1 The diagram shows a cross-section of the signal transmission structure along line A-A'.

[0026] Figure 3 for Figure 1 A partially enlarged schematic diagram of the signal transmission structure in the diagram.

[0027] Figures 4 to 6 for Figure 1 The diagram shows the simulation results when the width of the connection structure in the signal transmission structure is different.

[0028] Figures 7 to 9 for Figure 1 The diagram shows the simulation results when the thickness of the insulating layer in the signal transmission structure is different.

[0029] Figure 10 This is a schematic diagram of a signal transmission structure.

[0030] Figures 11 to 13 In response to Figure 1 and Figure 10 The simulation results of the signal transmission structure are shown in the comparison diagram.

[0031] Figure 14 A schematic diagram of another signal transmission structure provided for at least one embodiment of this disclosure.

[0032] Figure 15 for Figure 14 A partially enlarged schematic diagram of the signal transmission structure in the diagram.

[0033] Figures 16 to 18 For setting Figure 14 The simulation results before and after the connection structure are shown in the figure.

[0034] Figure 19 This is a schematic diagram of yet another signal transmission structure provided for at least one embodiment of the present disclosure.

[0035] Figure 20 for Figure 19 A partially enlarged schematic diagram of the signal transmission structure in the diagram.

[0036] Figures 21 to 23 For setting Figure 20 The simulation results before and after the connection structure are shown in the figure.

[0037] Figure 24 This is a schematic diagram of yet another signal transmission structure provided for at least one embodiment of the present disclosure.

[0038] Figure 25 for Figure 24 A partially enlarged schematic diagram of the signal transmission structure in the diagram.

[0039] Figures 26 to 28 For setting Figure 25 The simulation results before and after the connection structure are shown in the figure.

[0040] Figure 29 This is a schematic diagram of yet another signal transmission structure provided for at least one embodiment of the present disclosure.

[0041] Figure 30 for Figure 29 The diagram shows a cross-section of the signal transmission structure along line B-B'.

[0042] Figures 31 to 33 In response to Figure 10 and Figure 29 The simulation results of the signal transmission structure are shown in the comparison diagram.

[0043] Figure 34 This is a schematic diagram of yet another signal transmission structure provided for at least one embodiment of the present disclosure. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. Based on the described embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0045] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects.

[0046] The features such as "perpendicular," "parallel," and "identical" used in the embodiments of this disclosure include features in the strict sense of "perpendicular," "parallel," and "identical," as well as cases where "approximately perpendicular," "approximately parallel," and "approximately identical" include certain errors. Taking into account the measurement and the errors associated with the measurement of a specific quantity (i.e., the limitations of the measurement system), they represent the acceptable deviation range for a specific value as determined by a person skilled in the art. The "center" in the embodiments of this disclosure can include a position strictly located at the geometric center and a position approximately located at the center of a small area surrounding the geometric center.

[0047] As the size of optoelectronic devices continues to shrink, the wiring density inside the chip gradually increases. As a result, the ground plane inside the chip is continuously divided, which may affect the potential balance and may lead to a larger characteristic impedance of the signal transmission line, thereby increasing the loss of optoelectronic devices.

[0048] Therefore, how to reduce the ground potential difference in the signal transmission structure while lowering the characteristic impedance of the signal transmission line to effectively ensure the functional reliability and stability of the signal transmission structure has become an urgent problem to be studied and solved.

[0049] At least one embodiment of this disclosure provides a signal transmission structure, including a substrate, a coplanar waveguide transmission layer, and at least one connection structure. The coplanar waveguide transmission layer is located on the substrate and includes a first ground electrode portion, a transmission portion, and a second ground electrode portion disposed sequentially at intervals. The connection structure is located on the side of the substrate near the coplanar waveguide transmission layer. A first end of the connection structure is electrically connected to the first ground electrode portion, and a second end of the connection structure opposite to the first end is electrically connected to the second ground electrode portion. The signal transmission structure further includes an insulating layer located on the substrate. At least a portion of the at least one insulating layer is located between the connection structure and the transmission portion, so that the connection structure and the transmission portion are insulated from each other.

[0050] In at least one embodiment of the signal transmission structure provided by this disclosure, on the one hand, the first ground electrode portion is connected to the second ground electrode portion through a connecting structure, thereby reducing the potential difference between the first ground electrode portion and the second ground electrode portion, which is beneficial to maintaining the stability of the electromagnetic field distribution and thus ensuring the continuity of the characteristic impedance along the transmission section direction; on the other hand, the connecting structure is insulated from the transmission section through an insulating layer, thereby satisfying the electrical stability of the connecting structure while making the distance between the connecting structure and the transmission section smaller, which is beneficial to increasing the coupling capacitance between the connecting structure and the transmission section, so as to effectively reduce the characteristic impedance.

[0051] The signal transmission structure provided in the embodiments of this disclosure is described below with reference to the accompanying drawings.

[0052] Figure 1 A schematic diagram of a signal transmission structure provided for at least one embodiment of this disclosure; Figure 2 for Figure 1 A schematic diagram of the cross-section of the signal transmission structure along line A-A'. Figure 3 for Figure 1 A partially enlarged schematic diagram of the signal transmission structure in the diagram.

[0053] like Figure 1 As shown, the signal transmission structure includes a substrate 100 and a coplanar waveguide transmission layer 200 located on the substrate 100. The coplanar waveguide transmission layer 200 includes a first ground electrode portion 210, a transmission portion 230, and a second ground electrode portion 220 arranged sequentially at intervals, that is, the first ground electrode portion 210 and the second ground electrode portion 220 are located on opposite sides of the transmission portion 230. For example, the transmission portion 230 can also be referred to as an intermediate signal line, and the structure composed of the first ground electrode portion 210, the transmission portion 230, and the second ground electrode portion 220 can be called a coplanar waveguide transmission structure.

[0054] like Figure 1 and Figure 2 As shown, the signal transmission structure also includes at least one connection structure 300. Each connection structure 300 is located on the side of the substrate 100 near the coplanar waveguide transmission layer 200. The first end 310 of the connection structure 300 is electrically connected to the first ground electrode portion 210, and the second end 320 of the connection structure 300 opposite to the first end 310 is electrically connected to the second ground electrode portion 220. That is, the first ground electrode portion 210 is electrically connected to the second ground electrode portion 220 through the connection structure 300, so as to reduce the potential difference between the first ground electrode portion 210 and the second ground electrode portion 220 through the connection structure 300.

[0055] like Figure 1 and Figure 2As shown, the signal transmission structure also includes an insulating layer 400 located on the substrate 100. For example, the signal transmission structure may include one or more insulating layers 400, and the embodiments of this disclosure are not limited thereto. At least a portion of at least one insulating layer 400 is located between the connection structure 300 and the transmission portion 230, such that the connection structure 300 and the transmission portion 230 are insulated from each other. For example, in the direction Z perpendicular to the substrate 100, a portion of the insulating layer 400 is sandwiched between the connection structure 300 and the transmission portion 230. For example, the first end 310 of the connection structure 300 can be electrically connected to the first ground electrode portion 210 through a through-hole penetrating the insulating layer 400, and the second end 320 can also be electrically connected to the second ground electrode portion 220 through a through-hole penetrating the insulating layer 400. For example, the first end 310 is the portion of the connection structure 300 that overlaps with the first ground electrode portion 210 in the direction Z, and the second end 320 is the portion of the connection structure 300 that overlaps with the second ground electrode portion 220 in the direction Z. For example, the insulating layer 400 may include silicon oxide or silicon nitride, etc., and the embodiments disclosed herein are not limited thereto.

[0056] Therefore, in the signal transmission structure provided by at least one embodiment of this disclosure, on the one hand, the first ground electrode portion is connected to the second ground electrode portion through the connecting structure, which can reduce the potential difference between the first ground electrode portion and the second ground electrode portion, which is beneficial to maintaining the stability of the electromagnetic field distribution, thereby helping to ensure the continuity of the characteristic impedance along the transmission section direction; on the other hand, the connecting structure is insulated from the transmission section through an insulating layer, which, while satisfying the electrical stability of the connecting structure, can make the distance between the connecting structure and the transmission section smaller, thereby helping to increase the coupling capacitance between the connecting structure and the transmission section, so as to effectively reduce the characteristic impedance.

[0057] In some embodiments, such as Figure 1 As shown, the first ground electrode portion 210, the transmission portion 230, and the second ground electrode portion 220 are arranged sequentially in the first direction X and all extend along the second direction Y. Both the first direction X and the second direction Y are parallel to the substrate 100, and the first direction X intersects the second direction Y. For example, the first direction X is perpendicular to the second direction Y. The embodiments of this disclosure do not limit the angle between the first direction X and the second direction Y.

[0058] In some embodiments, such as Figure 1 and Figure 2 As shown, the connection structure 300 is located on the side of the coplanar waveguide transmission layer 200 away from the substrate 100. For example, in the direction Z perpendicular to the substrate 100, the insulating layer 400 is disposed on the coplanar waveguide transmission layer 200, and the connection structure 300 is disposed on the insulating layer 400, but the embodiments of this disclosure are not limited thereto.

[0059] Therefore, the insulation layer can be set according to the position of the transmission section, which helps to ensure the insulation effect between the connection structure and the transmission section. In addition, the position of the connection structure can be flexibly set according to the design requirements, which has little impact on the structure of the coplanar waveguide transmission layer, which helps to simplify the process and facilitates manufacturing.

[0060] In some embodiments, such as Figure 2 As shown, the transmission section 230 includes a first sidewall 231 and a second sidewall 232. The first sidewall 231 is disposed facing the first ground electrode section 210, and the second sidewall 232 is disposed facing the second ground electrode section 220. For example, the portion of the connection structure 300 located between the first end portion 310 and the second end portion 320 (e.g., the middle portion of the connection structure 300) includes a first sub-connection section 301, a second sub-connection section 302, and a third sub-connection section 303 connected in sequence. For example, both the first sub-connection section 301 and the third sub-connection section 303 extend along the Z direction, but the embodiments of this disclosure are not limited to this. For example, the extending directions of the first sub-connection section 301 and the third sub-connection section 303 may also intersect with the Z direction.

[0061] In some embodiments, such as Figure 2 As shown, the first sub-connection portion 301 is opposite to and spaced apart from the first sidewall 231, the second sub-connection portion 302 is opposite to and spaced apart from the surface of the transmission portion 230 away from the substrate 100, and the third sub-connection portion 303 is opposite to and spaced apart from the second sidewall 232.

[0062] With this configuration, the first sub-connection part, the second sub-connection part, and the third sub-connection part can jointly form a coupling capacitor with the transmission part, which is beneficial to make the coupling capacitor larger, thereby effectively reducing the characteristic impedance.

[0063] In some embodiments, such as Figure 2 As shown, in the connection structure 300, the portion formed by the sequential connection of the first sub-connecting portion 301, the second sub-connecting portion 302, and the third sub-connecting portion 303 is cut by a plane, and the cross-section is U-shaped or C-shaped. This plane is perpendicular to the substrate 100 and aligns with the second direction Y (see [reference]). Figure 1 )intersect.

[0064] Therefore, the transmission section can be located in the aforementioned "U" or "C" shaped region, which facilitates the formation of a larger coupling capacitance and reduces the characteristic impedance.

[0065] In some embodiments, such as Figure 1As shown, the signal transmission structure may include a plurality of connection structures 300 spaced apart along the second direction Y. For example, the coplanar waveguide transmission layer 200 further includes a first conductive portion 360 and a second conductive portion 380, the first ends 310 of at least two connection structures 300 are electrically connected through the first conductive portion 360, and the second ends 320 of at least two connection structures 300 are electrically connected through the second conductive portion 380.

[0066] For example, such as Figure 1 As shown, the first ends 310 of adjacent connection structures 300 are electrically connected through a first conductive portion 360, and the second ends 320 of the adjacent connection structures 300 are electrically connected through a second conductive portion 380. For example, the first ends 310 of all connection structures 300 in the signal transmission structure are electrically connected through the first conductive portion 360, and the second ends 320 of all connection structures 300 in the signal transmission structure are electrically connected through the second conductive portion 380. The embodiments of this disclosure do not limit the number of connection structures electrically connected to the first conductive portion or the second conductive portion.

[0067] Since the first conductive part is electrically connected to at least two connecting structures, when the electrical connection between the first end of a connecting structure and the first ground electrode part is broken, the second ground electrode part can achieve an electrical connection with the first ground electrode part through the first conductive part electrically connected to the connecting structure. Similarly, since the second conductive part is electrically connected to at least two connecting structures, when the electrical connection between the second end of a connecting structure and the second ground electrode part is broken, the first ground electrode part can achieve an electrical connection with the second ground electrode part through the second conductive part electrically connected to the connecting structure. Therefore, the arrangement of the first and second conductive parts is beneficial to ensuring the electrical connection effect between the first and second ground electrode parts.

[0068] In some embodiments, such as Figure 1 As shown, both the first conductive part 360 and the second conductive part 380 are elongated strips and extend along the second direction Y, which facilitates connection with multiple connection structures to ensure good electrical connection effect.

[0069] In other embodiments, reference is made to Figure 1 The first ends 310 of adjacent connection structures 300 are electrically connected via a first conductive portion 360, and the second ends 320 of two adjacent connection structures 300 are electrically connected via a second conductive portion 380. For example, at least one of the first conductive portion 360 and the second conductive portion 380 is connected to the same connection structure 300. For example, the first conductive portion 360 and the second conductive portion 380 may be offset from each other in the second direction Y, and the embodiments of this disclosure are not limited thereto.

[0070] Therefore, while enhancing the electrical connection between the first ground electrode and the second ground electrode, the electrical connection between the first conductive part and the second conductive part can be set according to design requirements, thereby making reasonable use of the layout space.

[0071] In some embodiments, such as Figure 1 As shown, at least one of the first conductive portion 360 and the second conductive portion 380 is disposed on the same layer as the connecting structure 300. For example, both the first conductive portion 360 and the second conductive portion 380 are located on the same layer as the connecting structure 300, and the embodiments of this disclosure are not limited to this. Therefore, it is beneficial to ensure the electrical connection effect with the connecting structure.

[0072] In some embodiments, such as Figure 1 As shown, at least one of the first conductive portion 360 and the second conductive portion 380 is integrally formed with the connecting structure 300. For example, both the first conductive portion 360 and the second conductive portion 380 are integrally formed with the connecting structure 300. For example, at least one of the first conductive portion and the second conductive portion can be made of the same material as the connecting structure and manufactured using the same process, thereby ensuring the electrical connection effect and simplifying the manufacturing process.

[0073] In some embodiments, such as Figure 3 As shown, the connection structure 300, and the first conductive portion 360 and the second conductive portion 380 electrically connected to the connection structure 300 are on the substrate 100 (see [link]). Figure 2 The orthographic projection on the surface is in the shape of an "I". Thus, by ensuring good electrical connection between the first ends of the multiple connecting structures and good connection between the second ends of the multiple connecting structures, a good electrical connection is achieved between the first ground electrode portion and the second ground electrode portion.

[0074] In some embodiments, reference Figure 1 and Figure 3 The signal transmission structure may include a plurality of first conductive portions 360 spaced apart, a plurality of second conductive portions 380 spaced apart, and a plurality of connecting structures 300. The orthographic projection of the plurality of first conductive portions 360, the plurality of second conductive portions 380, and the plurality of connecting structures 300 on the substrate 100 is a plurality of spaced "I" shapes. The embodiments of this disclosure do not limit the length of the first conductive portions and the second conductive portions in their respective extension directions, but can be set according to the layout space.

[0075] In some embodiments, such as Figures 1 to 3As shown, the connecting structure 300 extends along the first direction X, and the first conductive portion 360 and the second conductive portion 380 both extend along the second direction Y. In direction Z, the minimum thickness of the portion where the insulating layer 400 overlaps with the connecting structure 300 is 0.7 to 1.7 micrometers, such as 0.7 micrometers, 1.0 micrometers, or 1.2 micrometers; the embodiments of this disclosure do not limit this. For example, the maximum width of the connecting structure 300 in the second direction Y is 5 to 8 micrometers, such as 5 to 6 micrometers, 6 to 7 micrometers, or 7 to 8 micrometers; the embodiments of this disclosure do not limit this.

[0076] This configuration helps to reduce the characteristic impedance of the transmission section and allows for a larger bandwidth in the signal transmission structure.

[0077] Figures 4 to 6 for Figure 1 A schematic diagram of simulation results when the width of the connection structure in the signal transmission structure is different; Figures 7 to 9 for Figure 1 The diagram shows the simulation results when the thickness of the insulating layer in the signal transmission structure is different.

[0078] For example, such as Figures 1 to 3 As shown, the dimension of the connection structure 300 in the second direction Y is the width W of the connection structure 300. For a comparison of the insertion loss results when the width W of the connection structure 300 is 2 micrometers, 5 micrometers, 8 micrometers, and 11 micrometers, please see the diagram. Figure 4 Please see the comparison chart of the corresponding return loss results. Figure 5 Please see the comparison chart of the corresponding characteristic impedance results. Figure 6 For example, the simulation software used is High Frequency Structure Simulator (HFSS). The material of the coplanar waveguide transmission layer is gold, the substrate material is silicon, and the insulating layer material is silicon oxide. There are two connection structures 300. The signal transmission structure has a dimension of 610 micrometers in the first direction X and a dimension of 1260 micrometers in the second direction Y. The width M1 of the transmission section 230 is 40 micrometers, and the distances M2 between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X are both M2, and M2 is 38 micrometers. The dimension of the connection structure 300 in the direction Z, i.e., its thickness, is 1.5 micrometers. The dimension of the insulating layer 400 in the direction Z, i.e., its thickness, is 0.7 micrometers.

[0079] For example, in Figures 4 to 5 In the graph, the horizontal axis represents frequency, with the unit being gigahertz (GHz). Figure 4 In the graph, the vertical axis represents insertion loss, measured in decibels (dB). Figure 5 In the figure, the vertical axis represents the return loss, and its unit is decibel (dB).

[0080] For example, such as Figure 4 As shown, the frequency corresponding to an insertion loss of -1 dB represents the upper limit of the highest frequency at which the device can operate within an acceptable signal attenuation range. For example, when the frequency is -1 GHz, the minimum frequencies corresponding to connection structure widths W of 2 μm, 5 μm, and 8 μm are all relatively large, not less than 80 GHz. When the connection structure width W is 11 μm, the minimum frequencies corresponding to these values ​​are relatively small, less than 80 GHz.

[0081] For example, such as Figure 5 As shown, the frequency corresponding to a return loss of -10 dB can represent the upper limit of the device's operating bandwidth. For example, when the insertion loss is -10 dB, the corresponding frequencies are relatively high when the width W of the connection structure is 2 μm, 5 μm, 8 μm, and 11 μm, reaching 80 GHz.

[0082] For example, such as Figure 6 As shown, the horizontal axis represents signal transmission time in picoseconds (ps), and the vertical axis represents characteristic impedance in ohms (Ω). For example, with a reference impedance of 50Ω, the characteristic impedance fluctuates significantly when the width W of the connection structure is 2 micrometers and 11 micrometers, while the fluctuation is moderate when the width W is 8 micrometers and small when the width W is 5 micrometers.

[0083] Therefore, according to Figures 4 to 6 During the design process, the width W of the connection structure in the second direction Y can be set to 5 to 8 micrometers to enable the signal transmission structure to support a larger operating bandwidth and better characteristic impedance matching performance.

[0084] For example, such as Figure 2 As shown, the thickness of the insulating layer 400 is represented by thickness H. For comparisons of insertion loss results when the thickness H of the insulating layer 400 is 0.2 μm, 0.7 μm, 1.2 μm, and 1.7 μm, please see the graph. Figure 7 Please see the comparison chart of the corresponding return loss results. Figure 8 Please see the comparison chart of the corresponding characteristic impedance results. Figure 9For example, in the simulation, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide. There are two connection structures 300. The dimension of the signal transmission structure in the first direction X is 610 micrometers, and the dimension in the second direction Y is 1260 micrometers. The width M1 of the transmission section 230 is 40 micrometers, and the distance M2 between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is 38 micrometers. The dimension of the connection structure 300 in the direction Z, i.e., its thickness, is 1.5 micrometers.

[0085] For example, such as Figure 7 As shown, when the insertion loss is -1 dB, the frequency corresponding to the insulation layer thickness H is 0.2 μm is relatively low, about 60 GHz; when the insulation layer thickness H is 0.7 μm, 1.2 μm and 1.7 μm, the corresponding frequencies are all relatively high, about 85 GHz.

[0086] For example, such as Figure 8 As shown, when the return loss is -10 dB, the frequency corresponding to the insulation layer thickness H is 0.2 μm is approximately 70 GHz; when the insulation layer thickness H is 0.7 μm, 1.2 μm, and 1.7 μm, the corresponding frequencies are all greater than 100 GHz.

[0087] For example, such as Figure 9 As shown, with 50Ω as the reference impedance, the characteristic impedance fluctuates significantly when the thickness H of the insulating layer is 0.2 μm, while the characteristic impedance fluctuates moderately when the thickness H of the insulating layer is 0.7 μm or 1.7 μm, and the characteristic impedance fluctuates less when the thickness H of the insulating layer is 1.2 μm.

[0088] Therefore, according to Figures 7 to 9 During the design process, the thickness H of the insulating layer can be set to 0.7 to 1.7 micrometers to enable the signal transmission structure to support a larger operating bandwidth and better characteristic impedance matching performance.

[0089] Figure 10 This is a schematic diagram of a signal transmission structure. For example, with... Figure 1 Compared to the signal transmission structure shown, Figure 10 The connection structure shown is different, and the first conductive part and the second conductive part are not provided.

[0090] For example, such as Figure 10 As shown, the first end 310 of the connection structure 300 is electrically connected to the first ground electrode portion 210, and the second end 320 is electrically connected to the second ground electrode portion 220. The middle portion of the connection structure 300 is located on the side of the transmission portion 230 away from the substrate 100 and is spaced apart from the transmission portion 230. For example, Figure 10 The connection structure 300 shown can be called an "air bridge" structure.

[0091] Figures 11 to 13 In response to Figure 1 and Figure 10 The simulation results of the signal transmission structure are shown in the comparison diagram. Figure 1 The simulation results of the signal transmission structure shown are illustrated by the solid line. Figure 10 The simulation results of the signal transmission structure are shown by the dashed lines. The black dashed lines represent... Figure 10 The simulation results shown correspond to the "air bridge" structure, with the black solid line representing... Figure 11 The simulation results shown correspond to the connection structure set on the coplanar waveguide transmission layer. Insertion loss is represented by S21, return loss by S11, and characteristic impedance by TDR.

[0092] For example, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide.

[0093] For example, when performing simulations, for Figure 1 The signal transmission structure shown has two connection structures 300. The signal transmission structure has a dimension of 610 micrometers in the first direction X and a dimension of 1260 micrometers in the second direction Y. The width M1 of the transmission section 230 (see [reference needed]). Figure 2 The distance between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is 40 micrometers (see [link]). Figure 2 ), and M2 is 38 micrometers. The connection structure 300 is in the Z direction (see...). Figure 2 The dimension of the connecting structure 300 in the second direction Y, i.e., the thickness, is 1.5 micrometers. The dimension of the connecting structure 300 in the second direction Y, i.e., the width W, is 5 micrometers. The insulating layer 400 (see [link to documentation]). Figure 2 The thickness H of the material is 0.7 micrometers.

[0094] For example, when performing simulations, for Figure 10 The signal transmission structure shown has four connection structures 300. The signal transmission structure has a dimension of 582 micrometers in the first direction X and a dimension of 1260 micrometers in the second direction Y. The transmission section 230 has a width of 40 micrometers, and the distance between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is 23 micrometers. The thickness of the connection structure 300 is 5 micrometers. The width of the connection structure 300 is 10 micrometers. The distance between the connection structure 300 and the transmission section 230 in the direction Z is 20 micrometers. Insulating layer 400 (see [link to documentation]). Figure 2 It covers the transmission section 230 with a thickness of 1.2 micrometers.

[0095] For example, such as Figure 11 As shown, when the insertion loss is -1 dB, Figure 1 The connection structure shown corresponds to a relatively high frequency, and is greater than... Figure 10 The frequency corresponding to the connection structure shown.

[0096] For example, such as Figure 12 As shown, when the return loss is -10 dB, Figure 10 The minimum frequency corresponding to the connection structure shown is less than Figure 1 The frequency corresponding to the connection structure shown.

[0097] For example, such as Figure 13 As shown, with a reference impedance of 50Ω, Figure 1 The characteristic impedance of the connection structure shown has relatively small fluctuations. Figure 10 The characteristic impedance of the connection structure shown fluctuates significantly.

[0098] Therefore, according to Figures 11 to 13 It can be seen that, Figure 1 The connection structure shown can support a larger operating bandwidth and has better characteristic impedance matching performance.

[0099] Figure 14 A schematic diagram of another signal transmission structure provided for at least one embodiment of this disclosure; Figure 15 for Figure 14 A partially enlarged schematic diagram of the signal transmission structure in the image. For example, with... Figure 1 Compared to the signal transmission structure shown, Figure 14 The connection structure in the signal transmission structure shown is different, and the first conductive part and the second conductive part are not provided. All other features are the same. The similarities will not be described in detail. Please refer to the relevant descriptions of the above embodiments for details.

[0100] In some embodiments, such as Figure 14 As shown, the signal transmission structure includes multiple connection structures 300, and the multiple connection structures 300 include at least one connection structure group 030. Each connection structure group 030 includes at least two connection structures 300 arranged in a cross configuration. For example, the connection structure group 030 includes two connection structures 300, and the orthographic projection of the two connection structures 300 on the substrate 100 is an "X" shape.

[0101] Since each connection structure in the connection structure group is electrically connected to the first ground electrode portion and the second ground electrode portion respectively, a good electrical connection effect can be achieved between the first ground electrode portion and the second ground electrode portion, which is beneficial to reducing the potential difference between the first ground electrode portion and the second ground electrode portion.

[0102] In some embodiments, such as Figure 14 and Figure 15 As shown, at least two connecting structures 300 in the connecting structure group 030 include a first connecting structure 330 and a second connecting structure 340, which are centrally symmetrically distributed. For example, the first connecting structure 330 and the second connecting structure 340 have equal lengths. For example, the first connecting structure 330 can coincide with the second connecting structure 340 by rotating it by a certain angle, such as 30 degrees to 50 degrees.

[0103] With this configuration, when the first connection structure and the second connection structure form coupling capacitors with the transmission section respectively, it is beneficial to make the coupling capacitors between the first connection structure and the transmission section and the second connection structure and the transmission section have uniform values, thereby allowing for better control of the characteristic impedance.

[0104] In some embodiments, such as Figure 15 As shown, the first connecting structure 330 and the second connecting structure 340 are arranged in the same layer. For example, the first connecting structure 330 and the second connecting structure 340 can be manufactured using the same process. For example, the middle portion of the first connecting structure 330 intersects with the middle portion of the second connecting structure 340. For example, the middle portion of the first connecting structure 330 and the middle portion of the second connecting structure 340 are of the same structure. For example, the thickness of the intersecting portion of the first connecting structure 330 and the second connecting structure 340 is the same as the thickness of either the first connecting structure 330 or the second connecting structure 340. This simplifies the manufacturing process and facilitates control of the coupling capacitance between the connecting structure assembly and the transmission section.

[0105] Figures 16 to 18 For setting Figure 14 The simulation results before and after the connection structure are shown in the figure. Figures 16 to 18 In the middle, solid lines indicate settings. Figure 14 The simulation results after the connection structure are shown, with dashed lines indicating the settings. Figure 14 The simulation results before the connection structure are shown.

[0106] For example, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide.

[0107] For example, when performing simulations, for Figure 14 The signal transmission structure shown has three connection structure groups 030. The signal transmission structure has a dimension of 614 micrometers in the first direction X and a dimension of 1260 micrometers in the second direction Y. Each connection structure (such as...) Figure 15 The first connecting structure 330 and the second connecting structure 340 shown are in the direction Z (see [reference]). Figure 2The dimensions on the surface, i.e., the thickness, are 1 micrometer. The width of each connecting structure is 5 micrometers. The width of the transmission section 230 is 38 micrometers, and the distance between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is 38 micrometers. The thickness of the insulating layer 400 is 5.1 micrometers.

[0108] For example, such as Figure 16 As shown, when the insertion loss is -1 dB, the setting is... Figure 14 The frequencies before and after the connection structure shown are not significantly different, and both are greater than 80 GHz.

[0109] For example, such as Figure 17 As shown, when the return loss is -10 dB, the setting is... Figure 14 The minimum frequencies before and after the connection structure shown are not significantly different, and both are greater than 80 GHz. When the frequency is between 10 and 60 GHz, the setting is... Figure 14 The return loss after the connection structure shown is small and less than that without it. Figure 14 The return loss is shown in the connection structure.

[0110] For example, such as Figure 18 As shown, with a reference impedance of 50Ω, no setting was used. Figure 14 The characteristic impedance of the connection structure shown fluctuates significantly, so it is necessary to set... Figure 14 The characteristic impedance fluctuations corresponding to the connection structure shown are relatively small.

[0111] Therefore, according to Figures 16 to 18 It can be seen that, compared to not setting... Figure 14 The connection structure shown allows the signal transmission structure to support a larger operating bandwidth and better characteristic impedance matching performance.

[0112] Figure 19 A schematic diagram of yet another signal transmission structure provided for at least one embodiment of this disclosure; Figure 20 for Figure 19 A partially enlarged schematic diagram of the signal transmission structure in the image. For example, with... Figure 1 Compared to the signal transmission structure shown, Figure 19 The connection structure in the signal transmission structure shown is different, and the first conductive part and the second conductive part are not provided. All other features are the same. The similarities will not be described in detail. Please refer to the relevant descriptions of the above embodiments for details.

[0113] In some embodiments, such as Figure 19 and Figure 20 As shown, in the second direction Y, the first sub-connecting part 301 (see [reference]) Figure 2 The dimensions L1 and the third sub-connector 303 (see also) Figure 2The dimensions of all of them are smaller than the maximum dimension L2 of the second sub-connector 302. For example, the dimension of the third sub-connector 303 in the second direction Y is equal to the aforementioned dimension L1.

[0114] With this configuration, since the second sub-connection portion and the transmission portion are positioned opposite each other in a direction perpendicular to the substrate, the larger size of the second sub-connection portion in the second direction helps to increase the coupling capacitance between it and the transmission portion, thereby effectively reducing the characteristic impedance.

[0115] In some embodiments, such as Figure 20 As shown, the second sub-connection portion 302 is generally disk-shaped, which allows the dimensions of the second sub-connection portion 302 to be set approximately uniformly in the Z direction, which is beneficial for forming a stable and large coupling capacitance between the second sub-connection portion and the transmission portion.

[0116] In some embodiments, such as Figure 20 As shown, at least a portion of the second sub-connection portion 302 in the connection structure 300 is wound in a helical shape. For example, the portion between the first end 310 and the second end 320 of the connection structure 300 is continuously provided. For example, the helical portion of the second sub-connection portion 302 can be continuously provided. Thus, the dimensions of the second sub-connection portion in the Z direction can be made uniform, which is beneficial for forming a large and stable coupling capacitance with the transmission portion.

[0117] Figures 21 to 23 For setting Figure 20 The simulation results before and after the connection structure are shown in the figure. Figures 21 to 23 In the middle, solid lines indicate settings. Figure 20 The simulation results after the connection structure are shown, with dashed lines indicating the settings. Figure 20 The simulation results before the connection structure are shown.

[0118] For example, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide.

[0119] For example, refer to Figure 19 and Figure 20 When performing simulation, for Figure 20 The signal transmission structure includes one connection structure 300, with a thickness of 1 micrometer in the Z-direction. Each connection structure has a width of 2 micrometers. The transmission section 230 has a width of 38 micrometers, and the distances between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first X-direction are both 26 micrometers. The insulating layer 400 (see [link to documentation]) Figure 2 The thickness of the structure is 5.1 micrometers. The dimension of the signal transmission structure in the first direction X is 600 micrometers, and the dimension in the second direction Y is 1260 micrometers.

[0120] For example, such as Figure 21 As shown, when the insertion loss is -1 dB, the setting is... Figure 20 The frequencies before and after the connection structure shown are not significantly different, and both are greater than 80 GHz.

[0121] For example, such as Figure 22 As shown, when the return loss is -10 dB, the setting is... Figure 20 The minimum frequencies corresponding to the connection structure shown are both greater than 80 GHz.

[0122] For example, such as Figure 23 As shown, with a reference impedance of 50Ω, no setting was used. Figure 20 The characteristic impedance of the connection structure shown fluctuates significantly, so it is necessary to set... Figure 20 The characteristic impedance fluctuations corresponding to the connection structure shown are relatively small.

[0123] Therefore, according to Figures 21 to 23 It can be seen that, compared to not setting... Figure 20 The connection structure shown allows the signal transmission structure to support a larger operating bandwidth and better characteristic impedance matching performance.

[0124] Figure 24 A schematic diagram of yet another signal transmission structure provided for at least one embodiment of this disclosure; Figure 25 for Figure 24 A partially enlarged schematic diagram of the signal transmission structure in the image. For example, with... Figure 19 Compared to the signal transmission structure shown, Figure 19 The second sub-connection portion of the connection structure in the signal transmission structure shown is different, but the other features are the same. The similarities will not be described in detail. Please refer to the relevant descriptions of the above embodiments for details.

[0125] In some embodiments, such as Figure 24 and Figure 25 As shown, the second sub-connection portion 302 in the connection structure 300 (see also...) Figure 2 At least part of it is in the form of flakes.

[0126] This configuration allows the second sub-connector and the transmission unit to form a large and stable coupling capacitance, while also simplifying the manufacturing process of the second sub-connector.

[0127] For example, such as Figure 25 As shown, the sheet-like portion of the second sub-connector 302 is on the substrate 100 (see [link to substrate 100]). Figure 24 The orthographic projection on the surface is polygonal, circular, or elliptical, and the embodiments disclosed herein are not limited to this.

[0128] Figures 26 to 28For setting Figure 25 The simulation results before and after the connection structure are shown in the figure. Figures 26 to 28 In the middle, solid lines indicate settings. Figure 25 The simulation results after the connection structure are shown, with dashed lines indicating the settings. Figure 25 The simulation results before the connection structure are shown.

[0129] For example, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide.

[0130] For example, see Figure 25 and Figure 26 During simulation, for Figure 25 The number of connecting structures 300 shown is one. The dimension of the connecting structure 300 in the Z direction, i.e., its thickness, is 1 micrometer. The second sub-connecting portion 302 in the connecting structure 300, which overlaps with the transmission section 230 and is sheet-like (see [link]). Figure 2 The part is rectangular, with a length and a width of 25 micrometers. The transmission part 230 has a width of 38 micrometers, and the distance between the transmission part 230 and the first ground electrode part 210 and the second ground electrode part 220 in the first direction X is 28 micrometers. Insulating layer 400 (see [link]). Figure 2 The thickness of the structure is 5.1 micrometers. The dimension of the signal transmission structure in the first direction X is 600 micrometers, and the dimension in the second direction Y is 1260 micrometers.

[0131] For example, such as Figure 26 As shown, when the insertion loss is -1 dB, the setting is... Figure 25 The frequencies before and after the connection structure shown are not significantly different, and both are greater than 80 GHz.

[0132] For example, such as Figure 27 As shown, when the return loss is -10 dB, the setting is... Figure 25 The minimum frequencies corresponding to the connection structure shown are both greater than 80 GHz.

[0133] For example, such as Figure 28 As shown, with a reference impedance of 50Ω, no setting was used. Figure 25 The characteristic impedance of the connection structure shown fluctuates significantly, so it is necessary to set... Figure 25 The characteristic impedance fluctuations corresponding to the connection structure shown are relatively small.

[0134] Therefore, according to Figures 26 to 28 It can be seen that, compared to not setting... Figure 25 The connection structure shown has the following effect: after setting this connection structure, the signal transmission structure has less return loss at a specific frequency (e.g., 24 to 76 GHz) and better characteristic impedance matching performance.

[0135] Figure 29 A schematic diagram of yet another signal transmission structure provided for at least one embodiment of this disclosure; Figure 30 for Figure 29 The diagram shows a cross-section of the signal transmission structure along line B-B'. For example, with... Figure 1 Compared to the signal transmission structure shown, Figure 29 The connection structure and insulating layer in the signal transmission structure shown are different, but the other features are the same. The similarities will not be described in detail. Please refer to the relevant descriptions of the above embodiments for details.

[0136] In some embodiments, such as Figure 29 and Figure 30 As shown, the connection structure 300 is located between the coplanar waveguide transmission layer 200 and the substrate 100. For example, the connection structure 300 is disposed on the substrate 100, the insulating layer 400 is disposed on the connection structure 300, the coplanar waveguide transmission layer 200 is disposed on the insulating layer 400, the connection structure 300 is electrically connected to the first ground electrode portion 210 through a via in the insulating layer 400, and is electrically connected to the second ground electrode portion 220 through another via in the insulating layer 400.

[0137] This configuration, with an insulating layer between the connection structure and the transmission section and good uniformity of the distance between them, facilitates the formation of a stable coupling capacitance, thereby better reducing the characteristic impedance.

[0138] In some embodiments, reference Figure 30 Other insulating layers may also be provided between the substrate 100 and the connection structure 300. That is, the connection structure 300 may also be separated from the substrate 100 by at least one insulating layer. The embodiments disclosed herein do not limit this.

[0139] In some embodiments, such as Figure 30 As shown, in the first direction X, the maximum distance D1 between the first end 310 and the second end 320 of the connecting structure 300 is greater than the distance D2 between the first ground electrode portion 210 and the second ground electrode portion 220. For example, the ratio of D2 to D1 can be 1 / 3 to 2 / 3, such as 1 / 3, 1 / 2, or 2 / 3, and the embodiments of this disclosure are not limited thereto. For example, the first end 310 includes a portion located between the first ground electrode portion 210 and the substrate 100 in the direction Z and extending along the first direction X, and the second end 320 includes a portion located between the second ground electrode portion 220 and the substrate 100 in the direction Z and extending along the first direction X.

[0140] This configuration allows the first end portion to be electrically connected to the side of the first ground electrode portion near the substrate. The first end portion includes a portion located between the first ground electrode portion and the substrate in the Z direction and extending along the first direction X. This facilitates a good electrical connection between the first end portion and the first ground electrode portion and minimizes the impact of the first end portion on the flatness of the first ground electrode portion. Similarly, the second end portion can be electrically connected to the side of the second ground electrode portion near the substrate. The second end portion includes a portion located between the second ground electrode portion and the substrate in the Z direction and extending along the first direction X. This also facilitates a good connection between the second end portion and the second ground electrode portion and minimizes the impact of the second end portion on the flatness of the second ground electrode portion.

[0141] In some embodiments, such as Figure 30 As shown, the insulating layer 400 includes multiple vias N1, and the signal transmission structure includes multiple connection portions 430. For example, the connection portions 430 may be made of a different material than the coplanar waveguide transmission layer 200. For example, the connection portions 430 may be made of the same material as the connection structure 300, and the embodiments disclosed herein are not limited in this regard. For example, the connection portions 430 may be formed after the connection structure 300 is formed, and then the insulating layer 400 is formed over the entire surface. Finally, the connection portions 430 are exposed by etching the insulating layer 400, thereby allowing the first end portion 310 to be electrically connected to the first ground electrode portion 210 through the connection portion 430, and the second end portion 320 to be electrically connected to the second ground electrode portion 220 through another connection portion 430.

[0142] In some embodiments, such as Figure 30 As shown, the dimension of the connecting portion 430 in the first direction X is greater than the thickness of the connecting structure 300 in the direction Z, thereby enabling the connecting portion 430 to have good and stable electrical connection performance.

[0143] Figures 31 to 33 In response to Figure 10 and Figure 29 The simulation results of the signal transmission structure are shown in the comparison diagram. Figure 29 The simulation results of the signal transmission structure when a connection structure is set below the coplanar waveguide transmission layer are shown as solid lines. Figure 10 The simulation results of the signal transmission structure using the "air bridge" structure are shown by the dashed line.

[0144] For example, the simulation software used is HFSS, the material of the coplanar waveguide transmission layer is gold, the material of the substrate is silicon, and the material of the insulating layer is silicon oxide.

[0145] For example, refer to Figure 29 and Figure 30 During simulation, for Figure 29The number of connection structures 300 shown is two. The signal transmission structure has a dimension of 612 micrometers in the first direction X and a dimension of 1260 micrometers in the second direction Y. The width M1 of the transmission section 230 (see [reference]). Figure 2 The distance between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is M2 (see [link]). Figure 2 M2 is 37 micrometers. The dimension of the connecting structure 300 in the Z direction, i.e., its thickness, is 1.5 micrometers. The dimension of the connecting structure 300 in the second direction Y, i.e., its width W (see [reference]). Figure 3 The thickness of the insulating layer 400 is 5 micrometers. The thickness H of the insulating layer 400 is 0.7 micrometers.

[0146] For example, when performing simulations, for Figure 10 The signal transmission structure shown has four connection structures 300. Each signal transmission structure has a dimension of 582 micrometers in the first direction X and 1260 micrometers in the second direction Y. The width of each connection structure 300 is 10 micrometers. The width of the transmission section 230 is 40 micrometers. The distance between the transmission section 230 and the first ground electrode section 210 and the second ground electrode section 220 in the first direction X is 23 micrometers. The thickness of the transmission section 230 is 5 micrometers. The distance between the connection structure 300 and the transmission section 230 in the direction Z is 20 micrometers. Insulating layer 400 (see [link to documentation]). Figure 2 It covers the transmission section 230 with a thickness of 1.2 micrometers.

[0147] For example, such as Figure 31 As shown, when the insertion loss is -1 dB, Figure 10 The connection structures shown correspond to relatively high minimum frequencies, all of which are greater than 80 GHz.

[0148] For example, such as Figure 32 As shown, when the return loss is -10 dB, Figure 29 The connection structure shown corresponds to a relatively large minimum frequency, which is greater than 100GHz.

[0149] For example, such as Figure 33 As shown, with a reference impedance of 50Ω, Figure 29 The characteristic impedance of the connection structure shown has relatively small fluctuations. Figure 10 The characteristic impedance of the connection structure shown fluctuates significantly.

[0150] Therefore, according to Figures 31 to 33 It can be seen that, Figure 29 The connection structure shown has better characteristic impedance matching performance.

[0151] Figure 34This is a schematic diagram of yet another signal transmission structure provided for at least one embodiment of the present disclosure. For example, with Figure 30 Compared to the signal transmission structure shown, Figure 34 The connection structure and insulating layer in the signal transmission structure shown are different, but the other features are the same. The similarities will not be described in detail. Please refer to the relevant descriptions of the above embodiments for details.

[0152] In some embodiments, such as Figure 34 As shown, the signal transmission structure includes a first insulating layer 410 and a second insulating layer 420. The first insulating layer 410 is located between the coplanar waveguide transmission layer 200 and the connection structure 300, and the second insulating layer 420 is located between the substrate 100 and the connection structure 300. The first insulating layer 410 includes a plurality of vias N2. A portion of the first ground electrode portion 210 is located in the via N2, thereby being electrically connected to the connection structure 300. A portion of the second ground electrode portion 220 is located in another via N2, thereby being electrically connected to the connection structure 300.

[0153] For example, such as Figure 34 As shown, the portion of the coplanar waveguide transmission layer 200 located in the via N2 can be called the connection portion 430. The connection portion 430 can be part of the coplanar waveguide transmission layer 200, and is made of the same material and formed by the same process, thereby simplifying the process flow and making it easier to manufacture.

[0154] At least one embodiment of this disclosure also provides an electronic device, including the signal transmission structure provided in any embodiment of this disclosure, thereby the technical effects of the above-mentioned signal transmission structure are also reflected in the electronic device provided in the embodiments of this disclosure.

[0155] For example, the electronic devices provided in the embodiments of this disclosure can be optoelectronic chips, microelectronic chips (such as radio frequency transition chips), modulation devices, etc. For example, the electronic devices can be optical transmitters, optical receivers, modulators or amplifiers, etc. The embodiments of this disclosure do not limit this.

[0156] At least one embodiment of this disclosure also provides a design method for a signal transmission structure, which is applicable to the signal transmission structure provided in any embodiment of this disclosure. The design method includes:

[0157] like Figures 1 to 3 As shown, the width of the connection structure 300 and the thickness of the insulating layer 400 are adjusted so that the insertion loss, return loss, and characteristic impedance of the connection structure 300 meet the design requirements. The width of the connection structure 300 is the dimension of the connection structure 300 in the direction perpendicular to its extension direction and the substrate 100, for example, Figure 3 The width W of the connection structure 300 is shown.

[0158] like Figures 1 to 3 As shown, simulation software (such as HFSS) can be used to simulate the insertion loss, return loss, and characteristic impedance of the signal transmission structure after the connection structure 300 is set. Based on the simulation results, the width of the connection structure 300 and the thickness of the insulation layer 400 are used as adjustment objects to obtain a signal transmission structure that meets the design requirements.

[0159] In the signal transmission structure design method provided by the embodiments of this disclosure, the width of the connection structure and the thickness of the insulating layer are used as adjustment objects, so that the coupling capacitance between the connection structure and the transmission part can be effectively adjusted, which is conducive to calibrating the insertion loss, return loss and characteristic impedance of the signal transmission structure, thereby obtaining a signal transmission structure that meets the design requirements.

[0160] The following points need to be explained:

[0161] (1) The accompanying drawings of the embodiments of this disclosure only involve the structures involved in the embodiments of this disclosure, and other structures can be referred to the general design.

[0162] (2) Where there is no conflict, features of the same embodiment and different embodiments of this disclosure may be combined with each other.

[0163] The above description is merely an exemplary embodiment of this disclosure and is not intended to limit the scope of protection of this disclosure, which is determined by the appended claims.

Claims

1. A signal transmission structure, comprising: substrate; A coplanar waveguide transmission layer is located on the substrate, and the coplanar waveguide transmission layer includes a first ground electrode portion, a transmission portion, and a second ground electrode portion arranged sequentially at intervals. At least one connection structure is located on the side of the substrate near the coplanar waveguide transmission layer, and a first end of each connection structure is electrically connected to the first ground electrode portion, and a second end of the connection structure opposite to the first end is electrically connected to the second ground electrode portion. The signal transmission structure further includes an insulating layer located on the substrate. At least a portion of the insulating layer is located between the connection structure and the transmission part, so that the connection structure and the transmission part are insulated from each other, and both the connection structure and the transmission part are in direct contact with the insulating layer.

2. The signal transmission structure according to claim 1, wherein, The first ground electrode portion, the transmission portion, and the second ground electrode portion are arranged sequentially in a first direction and all extend along a second direction. Both the first direction and the second direction are parallel to the substrate, and the first direction and the second direction intersect. The connection structure is located on the side of the coplanar waveguide transmission layer away from the substrate, or the connection structure is located between the coplanar waveguide transmission layer and the substrate.

3. The signal transmission structure of claim 2, wherein, The connection structure is located on the side of the coplanar waveguide transmission layer away from the substrate. The transmission section includes a first sidewall facing the first ground electrode section and a second sidewall facing the second ground electrode section. The portion of the connection structure located between the first end and the second end includes a first sub-connection section, a second sub-connection section, and a third sub-connection section connected in sequence. The first sub-connection portion is opposite to and spaced apart from the first sidewall, the second sub-connection portion is opposite to and spaced apart from the surface of the transmission portion away from the substrate, and the third sub-connection portion is opposite to and spaced apart from the second sidewall.

4. The signal transmission structure according to claim 3, wherein, The portion of the connection structure in which the first sub-connecting part, the second sub-connecting part, and the third sub-connecting part are connected in sequence has a cross-section of "U" or "C" shaped by a plane, the plane being perpendicular to the substrate and intersecting the second direction.

5. The signal transmission structure according to claim 2, wherein, The signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures includes at least one group of connection structures, each group of connection structures including at least two connection structures arranged in an interleaved manner.

6. The signal transmission structure according to claim 5, wherein, The at least two connection structures in the connection structure group include a first connection structure and a second connection structure, wherein the first connection structure and the second connection structure are centrally symmetrically distributed.

7. The signal transmission structure according to claim 6, wherein, The first connection structure and the second connection structure are arranged on the same layer.

8. The signal transmission structure according to claim 3, wherein, In the second direction, the dimensions of both the first sub-connector and the third sub-connector are smaller than the maximum dimension of the second sub-connector.

9. The signal transmission structure according to claim 8, wherein, At least a portion of the second sub-connector is wound in a helical shape.

10. The signal transmission structure according to claim 8, wherein, At least a portion of the second sub-connector is plate-shaped.

11. The signal transmission structure according to any one of claims 2 to 10, wherein, The signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures are spaced apart along the second direction. The coplanar waveguide transmission layer further includes a first conductive part and a second conductive part, the first ends of at least two connection structures are electrically connected through the first conductive part, and the second ends of the at least two connection structures are electrically connected through the second conductive part.

12. The signal transmission structure according to claim 11, wherein, At least one of the first conductive part and the second conductive part is disposed in the same layer as the connection structure.

13. The signal transmission structure according to claim 11, wherein, At least one of the first conductive part and the second conductive part is integral with the connection structure.

14. The signal transmission structure according to claim 11, wherein, The first conductive portion and the second conductive portion are staggered in the second direction.

15. The signal transmission structure according to any one of claims 2 to 4, wherein, The signal transmission structure includes a plurality of the connection structures, and the plurality of connection structures are spaced apart along the second direction. The coplanar waveguide transmission layer further includes a first conductive portion and a second conductive portion. The first ends of at least two connection structures are electrically connected through the first conductive portion, and the second ends of at least two connection structures are electrically connected through the second conductive portion. The orthographic projection of the connection structure, the first conductive part and the second conductive part electrically connected to the connection structure on the substrate is in the shape of an "I".

16. The signal transmission structure according to claim 2, wherein, The connection structure is located between the coplanar waveguide transmission layer and the substrate. In the first direction, the maximum distance between the first end and the second end of the connection structure is greater than the distance between the first ground electrode portion and the second ground electrode portion.

17. The signal transmission structure according to claim 2, wherein, The connection structure is located between the coplanar waveguide transmission layer and the substrate. The signal transmission structure further includes multiple connecting portions, the insulating layer includes multiple vias, the multiple connecting portions are respectively located in the multiple vias, the first end of the connecting structure is electrically connected to the first ground electrode portion through one of the connecting portions, the second end of the connecting structure is electrically connected to the second ground electrode portion through another of the connecting portions, the connecting portions are made of different materials than the coplanar waveguide transmission layer, or the connecting portions are made of the same material as the coplanar waveguide transmission layer.

18. The signal transmission structure according to claim 17, wherein, The connecting portion has a first dimension in the first direction when cut by a plane, the plane being perpendicular to the substrate and parallel to the first direction, and the connecting structure has a second dimension in the direction perpendicular to the substrate, the first dimension being larger than the second dimension.

19. An electronic device comprising the signal transmission structure according to any one of claims 1 to 18.

20. A design method for a signal transmission structure, applicable to the signal transmission structure according to any one of claims 1 to 18, the design method comprising: The width of the connection structure and the thickness of the insulating layer are adjusted so that the insertion loss, return loss and characteristic impedance of the connection structure meet the design requirements. The width of the connection structure is the dimension of the connection structure in the direction perpendicular to its extension direction and the substrate.

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