Nanowire processing method based on electrostatic guidance and processing equipment thereof

Abstract

The invention relates to the technical field of nano material preparation, in particular to a nanowire processing method and processing equipment based on electrostatic guidance, and the method comprises the following steps: A, obtaining screened metal nanoparticles; b, carrying out electrified treatment on the screened metal nanoparticles to obtain electrified metal nanoparticles; c, enabling the first guide field plate to carry charges opposite to that of the charged metal nanoparticles, and enabling the second guide field plate to carry charges same as that of the charged metal nanoparticles; d, under the combined action of the electric field and the air flow, the electrified metal nanoparticles are deposited and filled in the first through hole; and E, annealing the deposited porous template device, removing the diffusion barrier layer by using a corrosive liquid, and separating to obtain the nanowire. According to the nanowire processing method and device based on electrostatic guidance, on the premise that the purity of nanowires is ensured and the production cost is reduced, the processing method is simple and suitable for most material systems, and the length-diameter ratio of the nanowires is adjustable and high in uniformity.

Description

Technical Field

[0001] This invention relates to the field of nanomaterial preparation technology, and in particular to a method and equipment for fabricating nanowires based on electrostatic guidance. Background Technology

[0002] Nanowires are linear nanomaterials that reach the nanometer scale (1 nanometer is one billionth of a meter) in one dimension. Due to their unique microstructure, they exhibit a series of nanomaterial properties such as size effect and quantum tunneling effect, and are widely used in fields such as electronics and integrated circuits, optoelectronic devices and solar cells.

[0003] Currently, the mainstream processing methods mainly include the following categories: (1) Chemical methods, including hydrothermal methods, polyol methods, low-temperature synthesis methods, biosynthesis methods, and electrodeposition methods, all rely on chemical reactions or are carried out in chemical solution environments, which can easily introduce chemical pollution, resulting in low purity of the prepared nanowires. At the same time, for high-melting-point refractory metals (such as tantalum, niobium, tungsten, molybdenum, and rhenium) and active metals (such as lithium, sodium, potassium, calcium, and magnesium), it is difficult for these metals to form stable soluble precursors to construct the reaction system, or they may react violently with the reaction medium, making it impossible to form regular nanostructures through the above chemical methods, thus resulting in poor universality of the methods. In addition, some chemical methods have problems with residual impurities and difficulty in control. Chinese invention patent with publication number CN100585032A discloses a method for preparing lead telluride nanowires, which uses polyvinylpyrrolidone, sodium tellurite, hydrazine hydrate, and ammonia as raw materials to generate Te nanowire solution through hydrothermal reaction; the Te nanowire solution is mixed with lead nitrate and then subjected to hydrothermal reaction again to obtain PbTe nanowires. In the hydrothermal synthesis of nanowires, the growth of nanowires is affected by multiple coupled parameters such as temperature, time, and solution concentration. These parameters are difficult to precisely control, leading to uncontrollable nucleation and growth processes, resulting in inaccurate aspect ratio control and poor uniformity. More importantly, the introduced chemical reagents, such as polyvinylpyrrolidone, hydrazine hydrate, and ammonia, leave behind impurities like carbon and nitrogen after the reaction. Even repeated washing cannot guarantee complete removal, causing intrinsic chemical contamination and low product purity.

[0004] (2) Physical methods: To avoid chemical pollution, physical methods have become a technological approach for preparing nanowires. For example, Chinese invention patent CN115448251A discloses a method for preparing high aspect ratio nanowires by continuously thinning materials using a focused ion beam and simultaneously depositing a protective layer. However, this method has two inherent limitations: First, the final product inevitably contains carbon deposition pollution from the protective layer, resulting in low product purity; second, this "subtractive manufacturing" process requires a large amount of initial materials, resulting in low yield and high production costs.

[0005] In summary, existing nanowire processing methods generally suffer from problems such as low purity, limited applicable materials, high production costs, difficulty in controlling aspect ratio, and poor uniformity. Summary of the Invention

[0006] The purpose of this invention is to propose a nanowire processing method and apparatus based on electrostatic guidance. Under the premise of ensuring nanowire purity and reducing production costs, the processing method is not only simple and applicable to most material systems, but also the aspect ratio of the nanowires is adjustable and the uniformity is high, thus overcoming the shortcomings of the prior art.

[0007] To achieve this objective, the present invention adopts the following technical solution: An electrostatically guided nanowire fabrication method is applicable to an electrostatically guided nanowire fabrication device. The electrostatically guided nanowire fabrication device includes a porous template device, which includes multiple channel structures. Each channel structure includes a through-hole template and an exhaust barrier that are sequentially arranged and interconnected along the discharge direction. The through-hole template has a first through-hole for charged metal nanoparticles to pass through. The exhaust barrier is used to exhaust air and block charged metal nanoparticles. The through-hole template includes a diffusion barrier layer, a guide plate layer and a support layer arranged sequentially from the inside to the outside. The diffusion barrier layer has the first through hole, and the guide plate layer includes a first guide plate and a second guide plate arranged sequentially along the discharge direction. The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction; The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare metal nanoparticles and screen them to obtain screened metal nanoparticles; B. The screened metal nanoparticles are charged to obtain charged metal nanoparticles; C. The first guiding field plate carries a charge opposite to that of the charged metal nanoparticles, and the second guiding field plate carries a charge the same as that of the charged metal nanoparticles. The voltage of the first guiding field plate is V1, and the voltage of the second guiding field plate decreases from V2 to 0. D. Under the combined action of inert deposition gas and electric field, the charged metal nanoparticles enter the interior of the first through hole of the diffusion barrier layer and migrate from the hole opening to the bottom of the hole, and finally deposit and fill the interior of the first through hole under the combined action of electric field and gas flow. E. The porous template device that has been deposited is annealed under a protective atmosphere, and then the diffusion barrier layer is removed using an etchant. After separating the guiding field plate layer, the support layer and the exhaust barrier layer, nanowires are obtained.

[0008] Furthermore, in step A, the particle size of the screened metal nanoparticles is 1–500 nm.

[0009] Furthermore, in step B, the charged metal nanoparticles have a charge of 1 × 10⁻⁶. -19 ~1×10 -18 C.

[0010] Further, in step C, V1 is -1 to -10kV, and V2 is 0.5 to 5kV, with the decrease range of V2 being 0.1 to 1kV.

[0011] Furthermore, the diameter of the first through hole 4111 is 5-5000 nm, the depth is 1-100 μm, and the depth-to-diameter ratio is (3-1000):1.

[0012] Further, in step D, the inert deposition gas includes any one of argon, helium, and nitrogen, and the flow rate of the inert deposition gas is 0.1 to 10 L / min.

[0013] Further, in step E, the annealing curve is as follows: the temperature is increased from room temperature to 100-500℃ at a heating rate of 1-20℃ / min, and then held at that temperature for 0.5-3 hours.

[0014] Further, in step E, the diffusion barrier layer comprises any one of titanium nitride, silicon dioxide, aluminum oxide, and silicon nitride; The etching solution includes an immersion solution and nitric acid; the immersion solution includes any one of phosphoric acid solution, hydrofluoric acid solution and sodium hydroxide solution.

[0015] An electrostatically guided nanowire fabrication apparatus is provided for implementing the aforementioned electrostatically guided nanowire fabrication method. It includes a metal nanoparticle preparation device, a screening device, an additional charge device, and a porous template device arranged sequentially and interconnected along the discharge direction. The air inlet of the metal nanoparticle preparation device is connected via a pipe to a gas supply device for providing inert deposition gas. The metal nanoparticle preparation device is used to prepare metal nanoparticles; the screening device is used to screen the metal nanoparticles; the additional charge device is used to charge the screened metal nanoparticles; and the porous template device is used to guide the charged metal nanoparticles for deposition. The porous template device includes multiple channel structures. The channel structure includes a through-hole template and an exhaust blocking part arranged sequentially and interconnected along the discharge direction. The through-hole template has a first through-hole for charged metal nanoparticles to pass through. The exhaust blocking part has a second through-hole for venting and blocking charged metal nanoparticles. The second through-hole is interconnected with the first through-hole. The through-hole template includes a diffusion barrier layer, a guiding field plate layer and a support layer arranged sequentially from the inside to the outside, and the diffusion barrier layer has the first through hole; the guiding field plate layer includes a first guiding field plate and a second guiding field plate arranged sequentially along the discharge direction, and the first guiding field plate has the opposite charge to the charged metal nanoparticles, while the second guiding field plate has the same charge to the charged metal nanoparticles. The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction.

[0016] Furthermore, the metal nanoparticle preparation device includes a reaction chamber, an anode metal rod, and a cathode metal rod. The interior of the reaction chamber is hollow, and the gas inlet of the reaction chamber is connected to a gas supply device for providing inert deposition gas through a pipe. The anode metal rod and the cathode metal rod are installed opposite each other inside the reaction chamber, with a gap between them. The anode metal rod and the cathode metal rod are electrically connected to the two poles of the power supply, respectively.

[0017] The technical solution provided by this invention may include the following beneficial effects: 1. This technical solution first prepares and screens metal nanoparticles, then charges the screened metal nanoparticles to obtain charged metal nanoparticles. Simultaneously, a first guiding field plate carries a charge opposite to that of the charged metal nanoparticles, and a second guiding field plate carries the same charge as the charged metal nanoparticles. The charged metal nanoparticles are placed in an inert deposition gas, which provides the main driving force for the charged metal nanoparticles to enter and pass through the first through-hole through airflow. Because the first guiding field plate carries a charge opposite to that of the charged metal nanoparticles, it generates electrostatic force that attracts the charged metal nanoparticles into the opening of the first through-hole and towards the depth of the channel. Simultaneously, because the second guiding field plate carries the same charge as the charged metal nanoparticles, it generates a repulsive force that pushes the charged metal nanoparticles from behind, preventing them from flowing back or agglomerating. The three elements work together to create a driving effect that combines pneumatic transport, electric field traction, and electric repulsion. This drives the charged metal nanoparticles into the through-hole of the first through-hole and migrates from the opening to the bottom of the hole along the channel of the first through-hole, completing self-assembly deposition. After deposition, the structure is fixed by annealing. Finally, the diffusion barrier layer is removed by chemical etching. After separating the guiding field plate layer, the support layer, and the exhaust barrier layer, nanowires are obtained.

[0018] 2. The purity of the nanowires is ensured by the following actions: (1) As described above, the metal nanoparticles can be moved slowly to the bottom of the hole by the force generated by the first and second guiding field plates and the airflow thrust generated by the airflow. Due to the repulsive force, the metal nanoparticles will not stick to the hole wall or agglomerate and block the pores. (2) The diffusion barrier layer remains stable during the nanowire deposition and annealing stages and does not decompose or react with charged metal nanoparticles. (3) Due to the barrier effect of the diffusion barrier layer, the nanowires formed during annealing will not diffuse between the nanowires and the guiding field plate layer or between the nanowires and the support layer. The diffusion barrier layer will not contaminate the nanowires, thus avoiding contamination of the nanowires by the guiding field plate layer and the support layer. (4) The pure physical electrostatic guidance is used as the self-assembly mechanism in this technical solution. No chemical solvents, surfactants or reaction precursors need to be introduced during the entire preparation process. This avoids the introduction of contaminants such as carbon and nitrogen from the source and ensures the high purity of the nanowire products.

[0019] 3. In this technical solution, the morphology of the nanowires is determined by the geometric parameters of the first through hole in the through-hole template. By pre-designing and precisely processing parameters such as the diameter and depth of the first through hole, the diameter and aspect ratio of the nanowires can be precisely controlled, which solves the technical defect of uncontrollable nanowire morphology (especially aspect ratio) caused by the difficulty in independently and precisely controlling the nucleation and growth processes in traditional chemical synthesis methods. Attached Figure Description

[0020] Figure 1This is a schematic diagram of the structure of a nanowire processing device based on electrostatic guidance according to the present invention.

[0021] Figure 2 This is a schematic diagram of the structure of a porous template device for a nanowire processing equipment based on electrostatic guidance according to the present invention.

[0022] Figure 3 This is a schematic diagram of the channel structure of a nanowire processing device based on electrostatic guidance according to the present invention.

[0023] The device includes: 1. Metal nanoparticle preparation apparatus, 11. Reaction chamber, 12. Anode metal rod, 13. Cathode metal rod, 2. Screening device, 3. Adding charge device, 4. Porous template device, 41. Through-hole template, 411. Diffusion barrier layer, 4111. First through-hole, 4121. Guiding field plate layer, 4121. Second guiding field plate, 4122. Support layer, 413. Exhaust barrier part, 42. Second through-hole, 421. Inert deposition gas aid, 5. Charged metal nanoparticles, 6. Detailed Implementation

[0024] This technical solution provides a nanowire processing method based on electrostatic guidance, applicable to an electrostatic guidance nanowire processing device. The electrostatic guidance nanowire processing device includes a porous template device 4, which includes multiple channel structures. The channel structures include a through-hole template 41 and an exhaust blocking part 42 arranged sequentially and interconnected along the discharge direction. The through-hole template 41 has a first through-hole 4111 for charged metal nanoparticles to pass through, and the exhaust blocking part 42 is used to exhaust air and block charged metal nanoparticles. The through-hole template 41 includes a diffusion barrier layer 411, a guide plate layer 412 and a support layer 413 arranged sequentially from the inside to the outside. The diffusion barrier layer 411 has the first through hole 4111, and the guide plate layer 412 includes a first guide plate 4121 and a second guide plate 4122 arranged sequentially along the discharge direction. The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction; The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare metal nanoparticles and screen them to obtain screened metal nanoparticles; B. The screened metal nanoparticles are charged to obtain charged metal nanoparticles; C. The first guiding field plate 4121 carries a charge opposite to that of the charged metal nanoparticles, and the second guiding field plate 4122 carries a charge the same as that of the charged metal nanoparticles, with the voltage of the first guiding field plate 4121 being V1 and the voltage of the second guiding field plate 4122 decreasing from V2 to 0. D. Under the combined action of inert deposition gas and electric field, the charged metal nanoparticles enter the interior of the first through hole 4111 of the diffusion barrier layer 411 and migrate from the opening to the bottom of the hole, and finally deposit and fill the interior of the first through hole 4111 under the combined action of electric field and airflow. E. Under a protective atmosphere, the porous template device 4 that has been deposited is annealed, and then the diffusion barrier layer 411 is removed using an etchant. After separating the guiding field plate layer 412, the support layer 413 and the exhaust barrier portion 42, nanowires are obtained.

[0025] To address the common technical problems of low purity, limited applicable materials, high production costs, difficulty in controlling aspect ratio, and uniformity in existing nanowire processing methods, this technical solution proposes an electrostatically guided nanowire processing method, including A (preparation and screening of metal nanoparticles), B (charge treatment), C (application of bias voltage), D (self-assembly deposition), and E (annealing and removal of diffusion barrier layer). By optimizing the processing method and raw materials, this method not only ensures nanowire purity and reduces production costs, but also simplifies the processing method, applies to most material systems, and allows for controllable aspect ratio and high uniformity of the nanowires to meet practical application requirements.

[0026] Specifically, this technical solution first prepares and screens metal nanoparticles, then charges the screened metal nanoparticles to obtain charged metal nanoparticles. Simultaneously, the first guiding plate 4121 carries a charge opposite to that of the charged metal nanoparticles, and the second guiding plate 4122 carries the same charge as the charged metal nanoparticles. The charged metal nanoparticles are placed in an inert deposition gas, which provides the main driving force for the charged metal nanoparticles to enter and pass through the first through-hole 4111 through airflow. Because the first guiding plate 4121 carries a charge opposite to that of the charged metal nanoparticles, it generates electrostatic force that attracts the charged metal nanoparticles into the opening of the first through-hole 4111 and migrates them deeper into the channel. Meanwhile, because the second guiding plate 4122 carries the same charge as the charged metal nanoparticles, it generates a repulsive force that pushes the charged metal nanoparticles from behind, preventing them from flowing back or agglomerating. The three elements work together to create a driving effect that combines pneumatic transport, electric field traction, and electric repulsion. This drives the charged metal nanoparticles into the through-hole of the first through-hole 4111 and migrates from the opening to the bottom of the hole along the channel of the first through-hole 4111, completing self-assembly deposition. After deposition, the structure is fixed by annealing. Finally, the diffusion barrier layer 411 is removed by chemical etching. Then, the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42 are separated to obtain nanowires.

[0027] Furthermore, in this technical solution, the principle of selectively removing the diffusion barrier layer 411 with an etchant, and then separating the guiding field plate layer 412, the support layer 413, and the exhaust barrier portion 42 to obtain nanowires is as follows: Since the nanowires are formed and attached only inside the first through-hole 4111 of the diffusion barrier layer 411, and the guiding field plate layer 412, the support layer 413, and the exhaust barrier portion 42 are chemically stable during the etching process and will not be corroded by the etchant, no additional complex chemical separation treatment is required. Only a simple subsequent separation process is needed to efficiently separate the complete nanowires from the unetched guiding field plate layer 412, the support layer 413, and the exhaust barrier portion 42. The latter will not interfere with the collection of nanowires and can be reused to further reduce process costs.

[0028] It should be noted that metal nanoparticles include elemental nanoparticles and alloy nanoparticles; elemental nanoparticles include, but are not limited to, gold nanoparticles, silver nanoparticles, copper nanoparticles, platinum nanoparticles, and nickel nanoparticles; alloy nanoparticles include, but are not limited to, copper-silver nanoparticles, gold-silver particles, copper-platinum particles, and copper-nickel particles.

[0029] More specifically, firstly, this technical solution ensures the purity of nanowires through the following mechanisms: (1) As described above, this technical solution utilizes the forces generated by the first guiding field plate 4121 and the second guiding field plate 4122, along with the airflow thrust, to enable the metal nanoparticles to slowly move towards the bottom of the pore. Furthermore, due to the repulsive force, the metal nanoparticles do not adhere to the pore wall or agglomerate and block the pores; (2) The diffusion barrier layer 411 remains stable during the nanowire deposition and annealing stages, without decomposition or reaction with charged metal nanoparticles; (3) During annealing, a diffusion barrier layer 411 is formed... Due to the barrier effect of the diffusion barrier layer 411, the nanowires do not diffuse between the nanowires and the guiding field plate layer 412 or between the nanowires and the support layer 413. Furthermore, the diffusion barrier layer 411 does not contaminate the nanowires, thus avoiding contamination of the nanowires by the guiding field plate layer 412 and the support layer 413. (4) This technical solution uses pure physical electrostatic guidance as a self-assembly mechanism. The entire preparation process does not require the introduction of any chemical solvents, surfactants or reaction precursors, thus avoiding the introduction of contaminants such as carbon and nitrogen from the source and ensuring the high purity of the nanowire products.

[0030] Secondly, this technical solution does not rely on specific chemical reactions or soluble precursors, and in principle it is applicable to any nanowires that can be made into metal nanoparticles, including high-melting-point insoluble metals (such as tantalum, niobium, tungsten, molybdenum and rhenium) and active metals (such as lithium, sodium, potassium, calcium and magnesium), breaking through the material limitations of traditional wet chemical methods and improving the applicability of materials.

[0031] Furthermore, the core processes in the processing method of this technical solution only involve electrostatic guidance and pneumatic conveying. The steps are simple and do not require complex reaction equipment or high-energy-consuming processing. Moreover, the separated guiding field plate layer 412 and support layer 413 can be reused or prepared at low cost, with high utilization rate. This avoids the large amount of material waste in physical methods such as focused ion beams and significantly reduces production costs.

[0032] Finally, in this technical solution, the morphology of the nanowires is determined by the geometric parameters of the first through-hole 4111 in the through-hole template 41. By pre-designing and precisely processing the pore size and depth of the first through-hole 4111, the diameter and aspect ratio of the nanowires can be precisely controlled, solving the technical defect of uncontrollable nanowire morphology (especially aspect ratio) caused by the difficulty in independently and precisely controlling the nucleation and growth processes in traditional chemical synthesis methods.

[0033] Furthermore, in this technical solution, all the first through-holes 4111 exhibit high consistency in pore size, depth, and spatial distribution. This highly consistent structure serves as the physical growth mold for nanowires, ensuring from the source that each nanowire has an identical morphologically defined space, laying the structural foundation for the intrinsic uniformity of the product. Simultaneously, the guiding field layer 412 ensures that the electric field strength experienced by the metal nanoparticles at the same location within each first through-hole 4111 is essentially consistent, allowing the charged metal nanoparticles to be driven by a relatively uniform electrophoretic force, which is beneficial for achieving standardized driving of the migration behavior of charged metal nanoparticles. In addition, the charged metal nanoparticles are fully dispersed in the inert deposition-assisted gas, forming a particle cloud with uniform concentration and distribution, providing a statistically consistent initial particle flow for each first through-hole 4111, eliminating filling differences from the material source.

[0034] Preferably, the separation method is as follows: after sonicating the porous template device 4 with the diffusion barrier layer 411 removed in deionized water for 0.5 to 2 minutes, the guiding field plate layer 412, the support layer 413 and the exhaust barrier part 42 are removed to obtain a nanowire mixed solution; the nanowire mixed solution is placed in a centrifuge tube and centrifuged until the supernatant is colorless and transparent to obtain a precipitate, which is the nanowire.

[0035] This technical solution utilizes the cavitation effect of ultrasound in liquids to generate intense shock waves, which break up the aggregated nanowires and physically separate them from the surface of the porous template device 4, allowing them to be fully dispersed in deionized water to form a nanowire mixed solution; then, centrifugal separation is used to achieve solid-liquid separation, thereby obtaining nanowires.

[0036] It should be noted that in step E, the protective atmosphere is either an inert atmosphere or a reducing atmosphere. In one embodiment, the inert atmosphere is any one or a combination of nitrogen, argon, and helium; the reducing atmosphere is any one or a combination of hydrogen, formaldehyde, and carbon monoxide.

[0037] The support layer 413 includes any one of anodic aluminum oxide, porous silicon oxide, and porous glass.

[0038] To further explain, in step A, the particle size of the screened metal nanoparticles is 1–500 nm.

[0039] When the particle size of the screened metal nanoparticles is <1 nm, they are prone to agglomeration and difficult to charge; when the particle size is >500 nm, their inertia is too great, and they are prone to impacting the pore walls. Therefore, this technical solution limits the particle size of the screened metal nanoparticles to 1–500 nm, which is beneficial to improving their stability and controllability.

[0040] To further clarify, in step B, the charged metal nanoparticles have a charge of 1 × 10⁻⁶. -19 ~1×10 -18 C.

[0041] This technical solution limits the charge of charged metal nanoparticles, which not only enables the charged metal nanoparticles to effectively overcome the van der Waals forces between adjacent particles and satisfy the electric field guidance, but also avoids excessive repulsion between adjacent particles, which would make it difficult for them to be tightly packed during the deposition process. This helps to ensure the performance of the obtained nanowires.

[0042] To further explain, in step C, V1 is -1 to -10kV, and V2 is 0.5 to 5kV, with the decrease range of V2 being 0.1 to 1kV.

[0043] This technical solution optimizes V1 and V2, which not only facilitates the smooth and effective entry of charged metal nanoparticles into the pores, but also avoids excessive electric field force that could cause charged metal nanoparticles to collide with the pore walls, thus ensuring the performance of the obtained nanowires.

[0044] Furthermore, this technical solution optimizes the decrease in V2, which can prevent the charged metal nanoparticles from becoming too chaotic due to excessively abrupt changes in the electric field force.

[0045] It should be noted that the decrease of V2 from 0.1 to 1 kV means that if the second guide field plate 4122 includes N guide field plate sections, the voltage of the first guide field plate section is V2, the voltage of the Nth guide field plate section is 0, and the voltage difference between two adjacent guide field plate sections is 0.1 to 1 kV.

[0046] It should be further explained that during the deposition process, (1) before the charged metal nanoparticles are at the center point of the first guiding field plate 4121, the forces acting on the charged metal nanoparticles are as follows: the magnitude of the net attractive force released by the first guiding field plate 4121 is F1, and the direction is from the orifice to the bottom of the orifice; the magnitude of the airflow thrust is Fp, and the direction is from the orifice to the bottom of the orifice; the magnitude of the net repulsive force released by the second guiding field plate 4122 is F2, and the direction is from the bottom of the orifice to the orifice. In order to ensure that the charged metal nanoparticles can enter the orifice and stably reach the center point of the first guiding field plate 4121, the forces acting on the charged metal nanoparticles always satisfy the following relationship: F1 + Fp > F2.

[0047] (2) When the charged metal nanoparticle is located after the center point of the first guiding field plate 4121 and before the center point of the first guiding field plate in the second guiding field plate 4122, the forces acting on the charged metal nanoparticle are as follows: the magnitude of the net attractive force released by the first guiding field plate 4121 is F1', and the direction is from the bottom of the hole to the opening; the magnitude of the airflow thrust is Fp, and the direction is from the opening to the bottom; the magnitude of the net repulsive force released by the second guiding field plate 4122 is F2', and the direction is from the bottom of the hole to the opening. To ensure that the charged metal nanoparticle can stably reach the center point of the first guiding field plate in the second guiding field plate 4122, the forces acting on the charged metal nanoparticle should always satisfy the following relationship: Fp > F1' + F2'.

[0048] (3) When the charged metal nanoparticle is after the center point of the first guiding field plate in the second guiding field plate 4122 and before the center point of the second guiding field plate in the second guiding field plate 4122, the forces acting on the charged metal nanoparticle are as follows: the magnitude of the combined attractive force released by the first guiding field plate 4121 is F1', and the direction is from the bottom of the hole to the opening of the hole; the magnitude of the airflow thrust is Fp, and the direction is from the opening of the hole to the bottom of the hole; the magnitude of the combined repulsive force released by the first guiding field plate in the second guiding field plate 4122 is F21, and the direction is from the opening of the hole to the bottom of the hole; the magnitude of the combined repulsive force released by the second guiding field plate in the second guiding field plate 4122 is F22, and the direction is from the bottom of the hole to the opening of the hole; ... ...; the magnitude of the combined repulsive force released by the i-th guiding field plate in the second guiding field plate 4122 is F2i, and the direction is from the bottom of the hole to the opening of the hole. To ensure that the charged metal nanoparticles can stably reach the center point of the second guiding field plate of the second guiding field plate 4122, the force on the charged metal nanoparticles always satisfies the following relationship: F_push + F_21 > F_1' + F_22 + ... + F_2i.

[0049] By analogy, charged metal nanoparticles can be gradually deposited inside the first through-hole 4111 under the combined action of airflow thrust and electric field.

[0050] To further explain, the diameter of the first through hole 4111 is 5-5000 nm, the depth is 1-100 μm, and the depth-to-diameter ratio is (3-1000):1.

[0051] This technical solution limits the parameters such as the aperture, depth, and aspect ratio of the first through-hole 4111, allowing for the selection of different parameters according to actual needs. This enables the fabrication of nanowires with varying parameters to meet the requirements of different fields, while also ensuring the structural stability of the through-hole template 41. It should be noted that the depth refers to the dimension of the first through-hole 4111 along its length, and the aspect ratio refers to the ratio of depth to aperture.

[0052] To further explain, in step D, the inert deposition gas includes any one of argon, helium, and nitrogen, and the flow rate of the inert deposition gas is 0.1 to 10 L / min.

[0053] This technical solution optimizes the types of argon, helium, and nitrogen. Since the selected inert deposition aids are relatively common and have a high degree of industrialization, they are beneficial to saving production costs while enabling the deposition of charged metal nanoparticles.

[0054] Furthermore, by limiting the flow rate of the inert deposition gas, this technical solution not only helps the inert deposition gas to provide effective thrust, but also avoids excessively high gas flow rates that could cause charged metal nanoparticles to collide with the pore walls, thereby improving the uniformity and other properties of the nanowires.

[0055] To further explain, in step E, the annealing curve is as follows: the temperature is increased from room temperature to 100-500℃ at a heating rate of 1-20℃ / min, and then held at that temperature for 0.5-3 hours.

[0056] This technical solution optimizes the annealing curve, which not only allows for the selection of appropriate annealing curves based on different types of nanowires, but also ensures more thorough atomic diffusion and fusion between charged metal nanoparticles under the specified annealing curve. This results in a denser nanowire structure, which in turn improves the mechanical and electrical properties of the nanowires.

[0057] Furthermore, this technical solution limits the heating rate to 1–20 °C / min. Within this range, not only is it beneficial to improve production efficiency, but it can also avoid thermal shock that could damage the structure of the nanowires, thereby improving the integrity of the nanowire structure.

[0058] To further explain, in step E, the diffusion barrier layer 411 includes any one of titanium nitride, silicon dioxide, aluminum oxide, and silicon nitride; The etching solution includes an immersion solution and nitric acid; the immersion solution includes any one of phosphoric acid solution, hydrofluoric acid solution and sodium hydroxide solution.

[0059] Titanium nitride, silicon dioxide, aluminum oxide, and silicon nitride remain stable during the nanowire deposition and annealing stages, without decomposition or reaction with charged metal nanoparticles. Furthermore, when removing the diffusion barrier layer 411, the etching solution used must selectively dissolve only these materials. Therefore, by preferably using the aforementioned materials for the diffusion barrier layer 411, this technical solution facilitates the preparation of high-purity nanowires.

[0060] Furthermore, by optimizing the etching solution, the etching solution used is made to dissolve only the diffusion barrier layer 411 without corroding the formed nanowires, and the etching products are easily removed completely by washing, thereby ensuring that the collected nanowires are not contaminated by residual diffusion barrier layer 411 material or reaction byproducts, which is beneficial to improving the purity of the nanowires.

[0061] Preferably, the etching solution comprises 60-85% immersion solution and 15-40% nitric acid by mass percentage, wherein the concentration of the immersion solution is 0.1-0.5 mol / L and the concentration of the nitric acid solution is 0.1-0.3 mol / L.

[0062] It should be noted that the concentration of the etching solution is 0.1 to 0.5 mol / L, which refers to the concentration of phosphoric acid in the phosphoric acid solution when the etching solution is a phosphoric acid solution. The same principle applies to other types of etching solutions.

[0063] An electrostatically guided nanowire fabrication device is provided for implementing the aforementioned electrostatically guided nanowire fabrication method. It includes a metal nanoparticle preparation device 1, a screening device 2, an additional charge device 3, and a porous template device 4, arranged sequentially and interconnected along the discharge direction. The air inlet of the metal nanoparticle preparation device 1 is connected via a pipe to a gas supply device for providing inert deposition gas. The metal nanoparticle preparation device 1 is used to prepare metal nanoparticles; the screening device 2 is used to screen the metal nanoparticles; the additional charge device 3 is used to charge the screened metal nanoparticles; and the porous template device 4 is used to guide the charged metal nanoparticles for deposition. The porous template device 4 includes multiple channel structures. The channel structure includes a through-hole template 41 and an exhaust blocking part 42 arranged sequentially and interconnected along the discharge direction. The through-hole template 41 has a first through-hole 4111 for charged metal nanoparticles to pass through. The exhaust blocking part 42 has a second through-hole 421 for venting and blocking charged metal nanoparticles. The second through-hole 421 is interconnected with the first through-hole 4111. The through-hole template 41 includes a diffusion barrier layer 411, a guiding field plate layer 412, and a support layer 413 sequentially arranged from the inside to the outside, and the diffusion barrier layer 411 has the first through hole 4111; the guiding field plate layer 412 includes a first guiding field plate 4121 and a second guiding field plate 4122 arranged sequentially along the discharge direction, and the first guiding field plate 4121 has the opposite charge to the charged metal nanoparticles, while the second guiding field plate 4122 has the same charge as the charged metal nanoparticles; The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction.

[0064] This solution also proposes an electrostatically guided nanowire processing device, which, in conjunction with an electrostatically guided nanowire processing method, can effectively improve the technical problems commonly found in existing nanowire processing methods, such as low purity, limited applicable materials, high production costs, difficulty in controlling aspect ratio, and uniformity, with lower equipment costs. It is beneficial to simplify the processing method and make it applicable to most material systems while ensuring nanowire purity and reducing production costs. Moreover, the aspect ratio of the nanowires can be controlled and the uniformity is high, so as to meet practical application needs.

[0065] Specifically, such as Figures 1-3 As shown, the processing equipment of this technical solution includes a metal nanoparticle preparation device 1, a screening device 2, an additional charge device 3, and a porous template device 4, which are arranged sequentially and interconnected along the discharge direction. The metal nanoparticle preparation device 1 is used to prepare metal nanoparticles, the screening device 2 is used to screen the metal nanoparticles, the additional charge device 3 is used to charge the screened metal nanoparticles, and the porous template device 4 is used to guide the charged metal nanoparticles to be deposited. After the charged metal nanoparticles are deposited, the porous template after deposition is annealed, and then the diffusion barrier layer 411 is removed using an etching solution. After separation, nanowires are obtained. This method is simple and efficient, and can ensure the effective realization of the nanowire processing method.

[0066] Specifically, this technical solution provides a first through hole 4111 on the through hole template 41 for charged metal nanoparticles to pass through, and a second through hole 421 on the exhaust barrier part 42 for exhausting and blocking charged metal nanoparticles. This allows the charged metal nanoparticles to smoothly discharge inert deposition gas during the deposition process of the first through hole 4111, which not only facilitates the smooth deposition of charged metal nanoparticles, but also improves the compactness of the arrangement of charged metal nanoparticles during the deposition process.

[0067] Preferably, the exhaust barrier 42 and the support layer 413 are integrally formed, and the exhaust barrier 42 and the support layer 413 are made of the same type of material.

[0068] This technical solution, through the aforementioned design, eliminates potential interface gaps or connection instabilities in traditional assembly structures, ensuring the robustness of the equipment. Simultaneously, this design not only effectively prevents the leakage of charged metal nanoparticles from the interface during deposition, thus avoiding contamination or blockage, but also improves the mechanical strength and heat resistance consistency of the entire device in subsequent processes such as thermal annealing, thereby enhancing process stability and the uniformity of the nanowires. It should be noted that the screening device 2 primarily uses a sieve to screen the metal nanoparticles, which is a physical screening method and will not cause contamination. Simultaneously, the additional charge device 3 causes the screened metal nanoparticles to physically adsorb charged particles, thus becoming charged. During subsequent annealing, when the thermal kinetic energy gained by the adsorbed charged particles is sufficient to overcome the physical adsorption potential well between them and the surface of the screened metal nanoparticles, they will completely detach from the surface of the screened metal nanoparticles, achieving thermal desorption. This also prevents contamination of the nanowires, ensuring the purity of the product.

[0069] Preferably, the array of multiple channel structures is distributed in the porous template device 4.

[0070] This technical solution, through the above-mentioned settings, not only maximizes the effective reaction area per unit area in the porous template device 4, thereby increasing the production volume of nanowires in a single process, but also ensures that the electric field, airflow, and particle flow environment of each pore structure are highly uniform. This guarantees the excellent uniformity of the entire nanowire array in terms of diameter, length, aspect ratio, and physical properties, significantly improving production efficiency and product yield. It provides a structurally regular and reliable basic material platform for subsequent integrated applications (such as nanowire array sensors and field emission devices).

[0071] Further explanation: The metal nanoparticle preparation device 1 includes a reaction chamber 11, an anode metal rod 12 and a cathode metal rod 13. The interior of the reaction chamber 11 is hollow, and the air inlet of the reaction chamber 11 is connected to a gas supply device for providing inert deposition gas through a pipe. The anode metal rod 12 and the cathode metal rod 13 are installed opposite to each other inside the reaction chamber 11, with a gap between them. The anode metal rod 12 and the cathode metal rod 13 are electrically connected to the two poles of the power supply, respectively.

[0072] In the reaction chamber 11 filled with inert deposition gas, a high voltage is applied between the anode metal rod 12 and the cathode metal rod 13. When the voltage reaches the critical value for gas breakdown, a momentary, high-energy pulse discharge (electric spark) occurs between the anode metal rod 12 and the cathode metal rod 13. The localized extreme high temperature (reaching thousands to tens of thousands of degrees Celsius) generated by the electric spark causes a small portion of the material on the surface of the anode metal rod 12 and the cathode metal rod 13 to melt, vaporize, and explode. The aforementioned metal vapor rapidly cools, nucleates, and condenses in the chamber filled with inert gas, ultimately forming nanoscale metal particles (i.e., metal nanoparticles), which are carried out by the inert deposition gas. It should be noted that when preparing elemental nanoparticles, the anode metal rod 12 and the cathode metal rod 13 are composed of the same type of metal; when preparing alloy nanoparticles, the anode metal rod 12 and the cathode metal rod 13 are composed of the same type of alloy metal.

[0073] The technical solution of the present invention will be further illustrated below through specific embodiments.

[0074] Example 1 An electrostatically guided nanowire processing method is applicable to an electrostatically guided nanowire processing device. The electrostatically guided nanowire processing device includes a porous template device 4, which includes multiple channel structures. The channel structures include a through-hole template 41 and an exhaust blocking part 42 arranged sequentially and interconnected along the discharge direction. The through-hole template 41 has a first through-hole 4111 for charged metal nanoparticles to pass through. The exhaust blocking part 42 is used to exhaust air and block charged metal nanoparticles. The through-hole template 41 includes a diffusion barrier layer 411, a guide plate layer 412 and a support layer 413 arranged sequentially from the inside to the outside. The diffusion barrier layer 411 has a first through hole 4111, and the guide plate layer 412 includes a first guide plate 4121 and a second guide plate 4122 arranged sequentially along the discharge direction. The second guide plate includes multiple guide plate sections arranged sequentially along the discharge direction, and the voltage of the multiple guide plate sections decreases sequentially along the discharge direction. The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare gold nanoparticles and screen them to obtain screened gold nanoparticles with a particle size of 20 nm. B. The screened gold nanoparticles were positively charged to obtain a charge of 5 × 10⁻⁶. -19 C-charged metal nanoparticles; C. The first guiding field plate 4121 carries a charge opposite to that of the charged gold nanoparticles, and the second guiding field plate 4122 carries a charge the same as that of the charged gold nanoparticles. The voltage of the first guiding field plate 4121 is -2.5kV, and the voltage of the second guiding field plate 4122 decreases from 1.8kV to 0; wherein the decrease in V2 is 0.2kV. D. Under the combined action of argon gas and an electric field, charged gold nanoparticles enter the interior of the first through-hole 4111 of the diffusion barrier layer 411 and migrate from the pore opening to the bottom of the pore. Finally, under the combined action of the electric field and the gas flow, they are deposited and fill the interior of the first through-hole 4111. The pore diameter of the first through-hole 4111 is 50 nm and the depth is 10 μm. The flow rate of argon gas is 1 L / min. E. Under a nitrogen atmosphere, the porous template device 4 that has completed deposition is annealed, and then the diffusion barrier layer 411 is removed using an etchant. After separating the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42, nanowires are obtained. The annealing curve is as follows: the temperature is increased from room temperature to 400°C at a heating rate of 15°C / min, and then held at that temperature for 0.5h. The diffusion barrier layer 411 includes titanium nitride. The etchant comprises 85% phosphoric acid solution with a concentration of 0.2mol / L and 15% nitric acid solution with a concentration of 0.1mol / L by mass percentage. The separation method is as follows: the porous template device 4 with the diffusion barrier layer 411 removed is sonicated in deionized water for 0.5min, and then the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42 are removed to obtain a nanowire mixed solution. The nanowire mixed solution is placed in a centrifuge tube and centrifuged until the supernatant is colorless and transparent to obtain a precipitate, which is the nanowire.

[0075] The morphological uniformity of the nanowires obtained in Example 1 through the above steps was observed using a scanning electron microscope. X-ray photoelectron spectroscopy was then used to detect whether there were residual elements such as carbon, nitrogen, and oxygen on the surface of the nanowires obtained in Example 1. The results showed that the nanowires obtained in Example 1 had high morphological uniformity and their surface was basically free of residual elements such as carbon, nitrogen, and oxygen, indicating high purity.

[0076] Example 2 An electrostatically guided nanowire processing method is applicable to an electrostatically guided nanowire processing device. The electrostatically guided nanowire processing device includes a porous template device 4, which includes multiple channel structures. The channel structures include a through-hole template 41 and an exhaust blocking part 42 arranged sequentially and interconnected along the discharge direction. The through-hole template 41 has a first through-hole 4111 for charged metal nanoparticles to pass through. The exhaust blocking part 42 is used to exhaust air and block charged metal nanoparticles. The through-hole template 41 includes a diffusion barrier layer 411, a guide plate layer 412 and a support layer 413 arranged sequentially from the inside to the outside. The diffusion barrier layer 411 has a first through hole 4111, and the guide plate layer 412 includes a first guide plate 4121 and a second guide plate 4122 arranged sequentially along the discharge direction. The second guide plate includes multiple guide plate sections arranged sequentially along the discharge direction, and the voltage of the multiple guide plate sections decreases sequentially along the discharge direction. The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare silver nanoparticles and screen them to obtain screened silver nanoparticles with a particle size of 30 nm. B. The screened silver nanoparticles were positively charged to obtain a charge of 3 × 10⁻⁶. -19 C-charged silver nanoparticles; C. The first guiding field plate 4121 carries a charge opposite to that of the silver nanoparticles, and the second guiding field plate 4122 carries a charge the same as that of the silver nanoparticles. The voltage of the first guiding field plate 4121 is -5kV, and the voltage of the second guiding field plate 4122 decreases from 3kV to 0. The decrease in voltage V2 is 0.2kV. D. Under the combined action of nitrogen gas and an electric field, charged silver nanoparticles enter the interior of the first through-hole 4111 of the diffusion barrier layer 411 and migrate from the pore opening to the bottom of the pore. Finally, under the combined action of the electric field and the gas flow, they are deposited and fill the interior of the first through-hole 4111. The pore diameter of the first through-hole 4111 is 100 nm and the depth is 20 μm. The flow rate of nitrogen gas is 0.5 L / min. E. Under a nitrogen atmosphere, the porous template device 4 that has completed deposition is annealed, and then the diffusion barrier layer 411 is removed using an etchant. After separating the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42, nanowires are obtained. The annealing curve is as follows: the temperature is increased from room temperature to 350°C at a heating rate of 15°C / min, and then held at that temperature for 1 hour. The diffusion barrier layer 411 includes titanium nitride. The etchant consists of 70% hydrofluoric acid solution with a concentration of 0.5 mol / L and 30% nitric acid solution with a concentration of 0.1 mol / L, calculated by mass percentage. The separation method is as follows: the porous template device 4 with the diffusion barrier layer 411 removed is sonicated in deionized water for 2 minutes, and then the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42 are removed to obtain a nanowire mixed solution. The nanowire mixed solution is placed in a centrifuge tube and centrifuged until the supernatant is colorless and transparent to obtain a precipitate, which is the nanowire.

[0077] The morphological uniformity of the nanowires obtained in Example 2 through the above steps was observed using a scanning electron microscope. X-ray photoelectron spectroscopy was then used to detect whether there were residual elements such as carbon, nitrogen, and oxygen on the surface of the nanowires obtained in Example 2. The results showed that the nanowires obtained in Example 2 had high morphological uniformity and their surface was basically free of residual elements such as carbon, nitrogen, and oxygen, indicating high purity.

[0078] Example 3 An electrostatically guided nanowire processing method is applicable to an electrostatically guided nanowire processing device. The electrostatically guided nanowire processing device includes a porous template device 4, which includes multiple channel structures. The channel structures include a through-hole template 41 and an exhaust blocking part 42 arranged sequentially and interconnected along the discharge direction. The through-hole template 41 has a first through-hole 4111 for charged metal nanoparticles to pass through. The exhaust blocking part 42 is used to exhaust air and block charged metal nanoparticles. The through-hole template 41 includes a diffusion barrier layer 411, a guide plate layer 412 and a support layer 413 arranged sequentially from the inside to the outside. The diffusion barrier layer 411 has a first through hole 4111, and the guide plate layer 412 includes a first guide plate 4121 and a second guide plate 4122 arranged sequentially along the discharge direction. The second guide plate includes multiple guide plate sections arranged sequentially along the discharge direction, and the voltage of the multiple guide plate sections decreases sequentially along the discharge direction. The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare copper nanoparticles and screen them to obtain screened copper nanoparticles with a particle size of 50 nm. B. The screened copper nanoparticles were positively charged to obtain a charge of 8 × 10⁻⁶. -19 C-charged copper nanoparticles; C. The first guiding field plate 4121 carries a charge opposite to that of the charged copper nanoparticles, and the second guiding field plate 4122 carries a charge the same as that of the charged copper nanoparticles. The voltage of the first guiding field plate 4121 is -6kV, and the voltage of the second guiding field plate 4122 decreases from 3kV to 0. The decrease in voltage V2 is 0.3kV. D. Under the combined action of helium gas and an electric field, charged copper nanoparticles enter the interior of the first through-hole 4111 of the diffusion barrier layer 411 and migrate from the pore opening to the bottom of the pore. Finally, under the combined action of the electric field and the gas flow, they are deposited and fill the interior of the first through-hole 4111. The pore diameter of the first through-hole 4111 is 100 nm and the depth is 30 μm. The flow rate of helium gas is 0.8 L / min. E. Under a nitrogen atmosphere, the deposited porous template device 4 is annealed, and then the diffusion barrier layer 411 is removed using an etchant. After separating the guiding field plate layer 412, the support layer 413, and the exhaust barrier portion 42, nanowires are obtained. The annealing curve is as follows: the temperature is increased from room temperature to 300°C at a heating rate of 5°C / min, and then held at that temperature for 1.5 hours. The diffusion barrier layer 411 comprises silicon nitride. The etchant comprises an etching solution and nitric acid. The etchant comprises hydrofluoric acid by mass percentage. The solution contains 80% acid and 20% nitric acid, with the concentration of hydrofluoric acid solution being 0.2 mol / L and the concentration of nitric acid being 0.2 mol / L. The separation method is as follows: the porous template device 4 with the diffusion barrier layer 411 removed is ultrasonicated in deionized water for 1 min, and then the guiding field plate layer 412, the support layer 413, and the exhaust barrier part 42 are removed to obtain a nanowire mixed solution; the nanowire mixed solution is placed in a centrifuge tube and centrifuged until the supernatant is colorless and transparent to obtain a precipitate, which is the nanowire.

[0079] The morphological uniformity of the nanowires obtained in Example 3 through the above steps was observed using a scanning electron microscope. X-ray photoelectron spectroscopy was then used to detect whether there were residual elements such as carbon, nitrogen, and oxygen on the surface of the nanowires obtained in Example 3. The results showed that the nanowires obtained in Example 3 had high morphological uniformity and their surface was basically free of residual elements such as carbon, nitrogen, and oxygen, indicating high purity.

[0080] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0081] In the description of this invention, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is generally based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this invention; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0082] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0083] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0084] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in sequences other than those illustrated or described herein.

[0085] The technical principles of the present invention have been described above with reference to specific embodiments. These descriptions are merely for explaining the principles of the invention and should not be construed as limiting the scope of protection of the invention in any way. Based on this explanation, those skilled in the art can readily conceive of other specific embodiments of the invention without inventive effort, and these embodiments will all fall within the scope of protection of the present invention.

Claims

1. A nanowire fabrication method based on electrostatic guidance, characterized in that, The present invention relates to an electrostatically guided nanowire processing device, the electrostatically guided nanowire processing device comprising a porous template device, the porous template device comprising a plurality of channel structures, the channel structures comprising a through-hole template and an exhaust barrier portion arranged sequentially and interconnected along the discharge direction, the through-hole template having a first through-hole for charged metal nanoparticles to pass through, and the exhaust barrier portion being used to exhaust air and block charged metal nanoparticles. The through-hole template includes a diffusion barrier layer, a guide plate layer and a support layer arranged sequentially from the inside to the outside. The diffusion barrier layer has the first through hole, and the guide plate layer includes a first guide plate and a second guide plate arranged sequentially along the discharge direction. The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction; The electrostatically guided nanowire fabrication method includes the following steps: A. Prepare metal nanoparticles and screen them to obtain screened metal nanoparticles; B. The screened metal nanoparticles are charged to obtain charged metal nanoparticles; C. The first guiding field plate carries a charge opposite to that of the charged metal nanoparticles, and the second guiding field plate carries a charge the same as that of the charged metal nanoparticles. The voltage of the first guiding field plate is V1, and the voltage of the second guiding field plate decreases from V2 to 0. D. Under the combined action of inert deposition gas and electric field, the charged metal nanoparticles enter the interior of the first through hole of the diffusion barrier layer and migrate from the hole opening to the bottom of the hole, and finally deposit and fill the interior of the first through hole under the combined action of electric field and gas flow. E. The porous template device that has been deposited is annealed under a protective atmosphere, and then the diffusion barrier layer is removed using an etchant. After separating the guiding field plate layer, the support layer and the exhaust barrier layer, nanowires are obtained.

2. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, In step A, the particle size of the screened metal nanoparticles is 1–500 nm.

3. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, In step B, the charged metal nanoparticles have a charge of 1 × 10⁻⁶. -19 ~1×10 -18 C.

4. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, In step C, V1 is -1 to -10kV, and V2 is 0.5 to 5kV, with the decrease in V2 being 0.1 to 1kV.

5. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, The diameter of the first through hole 4111 is 5-5000 nm, the depth is 1-100 μm, and the depth-to-diameter ratio is (3-1000):

1.

6. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, In step D, the inert deposition gas includes any one of argon, helium and nitrogen, and the flow rate of the inert deposition gas is 0.1 to 10 L / min.

7. The nanowire fabrication method based on electrostatic guidance according to claim 1, characterized in that, In step E, the annealing curve is as follows: the temperature is increased from room temperature to 100-500℃ at a heating rate of 1-20℃ / min, and then held at that temperature for 0.5-3 hours.

8. The method for fabricating nanowires based on electrostatic guidance according to claim 1, characterized in that, In step E, the diffusion barrier layer comprises any one of titanium nitride, silicon dioxide, aluminum oxide, and silicon nitride; The etching solution includes an immersion solution and nitric acid; the immersion solution includes any one of phosphoric acid solution, hydrofluoric acid solution and sodium hydroxide solution.

9. A nanowire fabrication device based on electrostatic guidance, characterized in that, A method for implementing the electrostatically guided nanowire fabrication method according to any one of claims 1 to 8 includes a metal nanoparticle preparation device, a screening device, an additional charge device, and a porous template device arranged sequentially and interconnected along the discharge direction. The air inlet of the metal nanoparticle preparation device is connected via a pipe to a gas supply device for providing inert deposition gas. The metal nanoparticle preparation device is used to prepare metal nanoparticles; the screening device is used to screen the metal nanoparticles; the additional charge device is used to charge the screened metal nanoparticles; and the porous template device is used to guide the charged metal nanoparticles for deposition. The porous template device includes multiple channel structures. The channel structure includes a through-hole template and an exhaust blocking part arranged sequentially and interconnected along the discharge direction. The through-hole template has a first through-hole for charged metal nanoparticles to pass through. The exhaust blocking part has a second through-hole for venting and blocking charged metal nanoparticles. The second through-hole is interconnected with the first through-hole. The through-hole template includes a diffusion barrier layer, a guiding field plate layer and a support layer arranged sequentially from the inside to the outside, and the diffusion barrier layer has the first through hole; the guiding field plate layer includes a first guiding field plate and a second guiding field plate arranged sequentially along the discharge direction, and the first guiding field plate has the opposite charge to the charged metal nanoparticles, while the second guiding field plate has the same charge to the charged metal nanoparticles. The second guide plate includes a plurality of guide plate sections arranged sequentially along the discharge direction, and the voltage of the plurality of guide plate sections decreases sequentially along the discharge direction.

10. The nanowire fabrication equipment based on electrostatic guidance according to claim 9, characterized in that, The metal nanoparticle preparation device includes a reaction chamber, an anode metal rod, and a cathode metal rod. The interior of the reaction chamber is hollow, and the gas inlet of the reaction chamber is connected to a gas supply device for providing inert deposition gas through a pipe. The anode metal rod and the cathode metal rod are installed opposite each other inside the reaction chamber, with a gap between them. The anode metal rod and the cathode metal rod are electrically connected to the two poles of the power supply, respectively.

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