Vapor deposition device and vapor deposition method

Abstract

The invention provides an evaporation device and an evaporation method, the evaporation device comprises an evaporation source and a connecting pipe, the connecting pipe and the evaporation source are oppositely arranged, the end, close to the connecting pipe, of the evaporation source is provided with a first step structure, the end, close to the evaporation source, of the connecting pipe is provided with a second step structure, and the first step structure is matched with the second step structure in shape; and the sealing structure is arranged between the first stepped structure and the second stepped structure. According to the evaporation device, the evaporation source and the connecting pipe are oppositely arranged, the first step structure and the second step structure which are matched are arranged on the contact end face of the evaporation source and the connecting pipe, and the sealing structure is arranged between the step structures, so that multiple layers of leakage paths are formed, evaporation materials are prevented from leaking, and reliable sealing in the high-temperature vacuum environment can be achieved.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, and more specifically, to a vapor deposition apparatus and a vapor deposition method. Background Technology

[0002] Organic light-emitting diode (OLED) display technology is considered the most promising next-generation display technology. Compared with liquid crystal display technology, OLED display technology has advantages such as low energy consumption, low cost, self-emissiveness, wide viewing angle, and fast response speed.

[0003] In the traditional OLED display panel manufacturing process, a fine metal mask (FMM) is typically used to pattern the light-emitting pixels. FMM technology is mature and has extensive mass production experience. However, FMM technology also suffers from limitations in precision and high cost. Fine metal mask-less technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance characteristics, offering advantages such as high performance, full-size display, and agile delivery. Patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A describe relevant content regarding fine metal mask-less technology and are provided for reference.

[0004] However, current vapor deposition equipment suffers from poor high-temperature sealing reliability. Summary of the Invention

[0005] In order to overcome the technical problems mentioned in the above technical background, this application provides a vapor deposition apparatus and a vapor deposition method.

[0006] To achieve the above objectives, this application provides a vapor deposition apparatus, which includes: An evaporation source and a connecting pipe are provided. The connecting pipe is positioned opposite to the evaporation source. The end of the evaporation source near the connecting pipe is provided with a first stepped structure, and the end of the connecting pipe near the evaporation source is provided with a second stepped structure. The shapes of the first stepped structure and the second stepped structure are matched. A sealing structure is provided between the first and second step structures.

[0007] In one embodiment, the sealing structure includes a sealing gasket located between the first stepped structure and the second stepped structure.

[0008] In one embodiment, the sealing structure further includes a sealing protrusion disposed on the step surface of the first stepped structure and located between the first stepped structure and the sealing gasket; and / or, the sealing protrusion is disposed on the step surface of the second stepped structure and located between the second stepped structure and the sealing gasket.

[0009] In one embodiment, the sealing structure includes a sealing ring disposed around a sealing gasket.

[0010] In one embodiment, the vapor deposition apparatus further includes: A cooling structure is provided on the side of the sealing ring near the evaporation source and / or near the connecting pipe to cool the sealing ring.

[0011] In one embodiment, the evaporation source includes a first mounting platform disposed at one end of the evaporation source near the connecting pipe; the connecting pipe includes a second mounting platform disposed at one end of the connecting pipe near the evaporation source; a first stepped structure is disposed on the first mounting platform, a second stepped structure is disposed on the second mounting platform, and a cooling structure is disposed within the first mounting platform and / or the second mounting platform.

[0012] In one embodiment, the evaporation source includes a first central channel that passes through a first mounting platform; the connecting pipe includes a second central channel that passes through a second mounting platform; the second central channel is connected to and intersects with the first central channel, and a sealing gasket surrounds the first central channel and the second central channel.

[0013] In one embodiment, the first stepped structure includes a first step surface and a third step surface that are not coplanar, with the third step surface located on the side of the first step surface away from the first central channel; the second stepped structure includes a second step surface and a fourth step surface that are not coplanar, with the fourth step surface located on the side of the second step surface away from the second central channel, the second step surface and the first step surface being opposite to each other; the sealing gasket includes a first gasket and a second gasket, the first gasket being located between the first step surface and the second step surface, and the second gasket being located between the second step surface and the fourth step surface.

[0014] In one embodiment, the first stepped structure includes a fifth stepped surface, which is located on the side of the third stepped surface away from the first central channel and is not coplanar with the third stepped surface and the first stepped surface; the second stepped structure includes a sixth stepped surface, which is located on the side of the fourth stepped surface away from the second central channel and is not coplanar with the fourth stepped surface and the second stepped surface; the sixth stepped surface and the fifth stepped surface are disposed opposite each other; the sealing gasket includes a third gasket, which is located between the fifth stepped surface and the sixth stepped surface.

[0015] In one embodiment, the first stepped structure includes a first mounting surface, which is not coplanar with the third step surface and the first step surface; the second stepped structure includes a second mounting surface, which is not coplanar with the fourth step surface and the second step surface; and the sealing ring is located between the first mounting surface and the second mounting surface.

[0016] In one embodiment, a mounting groove is provided on the first mounting surface and / or the second mounting surface, and the sealing ring is at least partially located in the mounting groove.

[0017] In one embodiment, the first stepped surface and the third stepped surface are located on the side of the first mounting surface near the connecting pipe, and the first stepped surface is located on the side of the third stepped surface near the connecting pipe.

[0018] In one embodiment, the sealing gasket comprises graphite foil.

[0019] In one embodiment, the vapor deposition apparatus further includes: Multiple nozzles, connected to a connecting tube, are used to deposit vapor-deposit materials onto a substrate.

[0020] Based on the same inventive concept, this application also provides a vapor deposition method, which includes: An evaporation source is connected to a connecting pipe that is positioned opposite to each other. The end of the evaporation source near the connecting pipe is provided with a first stepped structure, and the end of the connecting pipe near the evaporation source is provided with a second stepped structure. The shapes of the first stepped structure and the second stepped structure are matched, and a sealing structure is provided between the first stepped structure and the second stepped structure. The substrate is aligned with the evaporation source. An isolation structure is provided on one side of the substrate. The isolation structure encloses and forms an isolation opening. The evaporation source deposits luminescent material into the isolation opening to form a luminescent layer.

[0021] The vapor deposition apparatus provided in this application has an evaporation source and a connecting pipe arranged opposite each other. Matching first and second stepped structures are set at the contact end face of the evaporation source and the connecting pipe, and a sealing structure is set between the stepped structures to form a multi-layer leakage path, which blocks the leakage of vapor deposition material and can achieve reliable sealing and material transfer in a high-temperature vacuum environment. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is an exploded structural diagram of a related vapor deposition apparatus; Figure 2 This is an exploded view of the vapor deposition apparatus provided in one embodiment of this application; Figure 3 A partial enlarged view of the vapor deposition apparatus provided in another embodiment of this application; Figure 4 This is an exploded view of the vapor deposition apparatus provided in another embodiment of this application; Figure 5 This is a schematic diagram of the structure of a display panel prepared by a vapor deposition apparatus according to an embodiment of this application; Figure 6 for Figure 5 A schematic diagram of the partial film layer cross-section structure in the BB direction of a local area of ​​the display panel; Figure 7 This is a schematic cross-sectional view of the pixel circuit layer in a display panel according to an embodiment of this application; Figure 8 This is a schematic diagram of the pixel circuit in a display panel according to an embodiment of this application; Figure 9 This is a top view of a display panel according to an embodiment of this application; Figure 10 This is a schematic diagram of a partial film layer cross-section structure of a display panel according to an embodiment of this application; Figure 11 This is a schematic cross-sectional view of the light-emitting layer in a display panel according to an embodiment of this application; Figure 12 This is a schematic cross-sectional view of a display panel according to an embodiment of this application; Figure 13 A flowchart of a vapor deposition method provided in another embodiment of this application; Figure 14 A flowchart illustrating a method for manufacturing a display panel according to another embodiment of this application.

[0024] Explanation of reference numerals in the attached figures: 100. Evaporation apparatus; 2. Evaporation source; 201. First mounting platform; 202. First central channel; 21. First stepped structure; 211. First step surface; 212. Third step surface; 213. Fifth step surface; 214. First mounting surface; 3. Connecting pipe; 301. Second mounting platform; 302. Second central channel; 31. Second stepped structure; 311. Second step surface; 312. Fourth step surface; 313. Sixth step surface; 314. Second mounting surface; 4. Sealing structure; 41. Sealing gasket; 411. First gasket; 412. Second gasket; 413. Third gasket; 42. Sealing protrusion; 43. Sealing ring; 430. Mounting groove; 5. Cooling structure; 6. Nozzle; 10. Display panel; 11. Substrate; 12. Isolation structure; 121. Blocking portion; 122. Isolation portion; 123. Base; 12a. Isolation opening; 12a1. First isolation opening; 12a2. Second isolation opening; 12a3. Third isolation opening; 13. Light-emitting device; 131. First electrode; 132. Light-emitting layer; 133. Second electrode; 13a. First light-emitting device; 13b. Second light-emitting device; 13c. Third light-emitting device; 14. Encapsulation portion; 14a. First encapsulation portion; 14b. Second encapsulation portion; 14c. Third encapsulation portion; 15. Second encapsulation layer; 16. Third encapsulation layer; 17. Pixel defining layer; 18. Transistor; 19. Planarization layer. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0027] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. It should be noted that, unless otherwise specified, different features in the embodiments of this application can be combined with each other.

[0028] For ease of understanding, the accompanying diagram shows the mutually orthogonal X-axis, Y-axis, and Z-axis. The direction along the X-axis is called the X-direction, the direction along the Y-axis is called the Y-direction, and the direction along the Z-axis is called the Z-direction. The Z-direction is the normal direction relative to the plane containing the X and Y directions. Furthermore, a view where various elements are observed parallel to the plane containing the X and Y directions is called a top view. Alternatively, the planes in the X and Y directions can be planes parallel to the display surface of the display panel, and the Z-direction can be a direction parallel to the thickness direction of the display panel.

[0029] For certain elements, terms like "above" or "overhead" are sometimes used when describing the position of an element in the Z direction, and "below" or "under" are used when describing the position of an element in the opposite direction. Furthermore, when using terms like "above," "overhead," "below," "under," or "relative" to define the positional relationship between two elements, this includes not only the state where the two elements are directly adjacent, but also the state where the two elements are separated by gaps or other elements. Additionally, terms like "first," "second," and "third" are used only for distinguishing descriptions and should not be interpreted as indicating or implying relative importance.

[0030] Active-matrix organic light-emitting diode (AMOLED) displays are currently the mainstream consumer displays, available in various form factors, such as smartwatches, mobile displays, and large-screen TVs. Currently, the RGB emissive layers in the mainstream manufacturing processes of small and medium-sized RGB OLED displays are fabricated using fine metal mask (FMM) evaporation technology. However, due to limitations of the FMM process, FMM-deposited RGB emissive layers require significant shading, making them difficult to use in ultra-high pixel density (pixel per inch, PPI) products, such as AR / VR displays. Furthermore, for large-size evaporation, the uncontrollable deformation of the mask strips prevents the use of FMM-deposited RGB emissive layers. Currently, the mainstream technology for OLED displays above G8.5 is white OLED combined with color filter technology. With the development of display technology, high-end mobile displays require larger sizes, higher resolutions, wider color gamuts, and lower power consumption; therefore, FMM-free RGB evaporation has become an important development direction.

[0031] Figure 1 This is an exploded view of a related vapor deposition apparatus. (Reference) Figure 1 As shown, in related technologies, the vapor deposition apparatus 100 is a vertical vapor deposition machine used to vapor deposit materials onto a substrate. Its sealing scheme in a 1300℃ vacuum environment involves placing a sealing gasket 41 at the mating end face of the evaporation source 2 and the connecting pipe 3. The inventors of this application have found that the planar single-layer sealing structure used in related technologies is insufficient to prevent material leakage under high-temperature vacuum conditions. Furthermore, it is impossible to determine the sealing effectiveness visually, requiring a complex testing process.

[0032] Based on this, this application provides a vapor deposition apparatus solution, as detailed in the following embodiments.

[0033] Figure 2 This is an exploded view of the vapor deposition apparatus provided in one embodiment of this application. (Reference) Figure 2As shown, one embodiment of this application provides a vapor deposition apparatus 100, which includes an evaporation source 2, a connecting pipe 3, and a sealing structure 4. The connecting pipe 3 is disposed opposite to the evaporation source 2. A first stepped structure 21 is provided at one end of the evaporation source 2 near the connecting pipe 3, and a second stepped structure 31 is provided at the other end of the connecting pipe 3 near the evaporation source 2. The shapes of the first stepped structure 21 and the second stepped structure 31 are matched. The sealing structure 4 is disposed between the first stepped structure 21 and the second stepped structure 31.

[0034] Specifically, the vapor deposition apparatus 100 includes an evaporation source 2, a connecting pipe 3, and a sealing structure 4. The connecting pipe 3 is connected to the evaporation source 2, and their opposing contact surfaces are respectively provided with a first stepped structure 21 and a second stepped structure 31. The first stepped structure 21 and the second stepped structure 31 are shape-matched, i.e., contour-following. The sealing structure 4 is located between the first stepped structure 21 and the second stepped structure. The evaporation source 2 and the connecting pipe 3 are connected through the stepped structure, and the shape matching ensures that the stepped surfaces fit tightly. For example, the first stepped structure 21 and the second stepped structure 31 can each be multiple steps, corresponding to grooves or protrusions respectively, forming a convex-concave fit. The stepped structure can increase the angular barrier of the material transport path. For example, the principle of inertia can be used to restrict the passage of solids or liquids, forcing leaked materials to pass through multiple bends, which can reduce the probability of leakage. The contour-following design with shape matching ensures that each stepped surface can contact the corresponding structure, forming a physical barrier.

[0035] This embodiment combines a stepped structure with a sealing structure to break down a single leakage path into multiple paths. Each step can independently block leaked material, significantly reducing the probability of large foreign objects transferring to the substrate and improving yield. In addition, the physical blocking of the stepped structure itself can achieve preliminary sealing, providing a pre-sealing function. The stepped structure can also provide an installation foundation for the sealing structure, and its contoured design facilitates standardized processing, making it suitable for modular assembly in vertical evaporation machines.

[0036] Furthermore, the sealing structure 4 includes a sealing gasket 41, which is located between the first stepped structure 21 and the second stepped structure 31.

[0037] In one specific embodiment, the sealing gasket 41 is a graphite foil. Graphite foil is heat-resistant up to 1500°C and possesses both lubricating and sealing properties. The graphite foil fills the gaps in the stepped structure, utilizing its flexibility to fill microscopic unevenness and form a solid sealing layer. For example, a graphite foil gasket can be embedded between each step of the stepped structure to ensure the gasket covers the step surface, preventing leakage due to localized gaps. The layered structure of the graphite foil can adsorb gas molecules, further reducing the leakage rate in conjunction with the path barrier of the stepped structure. The graphite foil remains stable even in a vacuum environment at 1300°C, preventing the failure of traditional rubber seals due to high-temperature carbonization. Simultaneously, its low coefficient of friction facilitates assembly and reduces wear on the stepped structure.

[0038] refer to Figure 2 As shown, in one specific embodiment, the sealing structure 4 further includes a sealing protrusion 42, which is disposed on the step surface of the second stepped structure 31 and is located between the second stepped structure 31 and the sealing gasket 41.

[0039] Figure 4 This is an exploded view of the vapor deposition apparatus provided in another embodiment of this application. (Reference) Figure 4 As shown, in another embodiment, the sealing protrusion 42 is disposed on the step surface of the first stepped structure 21, and the sealing protrusion 42 is located between the first stepped structure 21 and the sealing gasket 41.

[0040] Of course, it is understandable that sealing protrusions 42 can be provided on the step surface of the first step structure 21 and the step surface of the second step structure 31 at the same time, and the two sealing protrusions 42 can be staggered.

[0041] Specifically, the sealing protrusion 42 can be a strip-shaped or annular protrusion made of metal, perpendicular to the step surface. For example, a protrusion can be machined on the step surface of the first stepped structure 21 and embedded in the sealing gasket 41, or a groove can be set at the corresponding position of the second stepped structure 31 to form a protrusion-groove interlocking structure. The sealing protrusion 42 can penetrate or press into the sealing gasket 41, increasing the mechanical connection strength between the sealing gasket 41 and the stepped structure, and preventing the sealing gasket 41 from shifting or falling off at high temperatures. The sealing protrusion 42 physically fixes the position of the sealing gasket 41, avoiding the problem of easy slippage of the sealing gasket 41 leading to sealing failure. The protrusion structure can convert the assembly torque into uniform pressure on the gasket, avoiding local overpressure that could cause gasket damage. For example, in a multi-layered step structure, each layer of protrusions applies pressure independently, ensuring consistent sealing performance across all gasket layers. The contact surface between the protrusion and the gasket forms a new sealing boundary, further dividing the leakage path and achieving a composite seal in conjunction with the stepped structure.

[0042] In one specific embodiment, the sealing structure 4 includes a sealing ring 43. The sealing ring 43 surrounds the sealing gasket 41, specifically an O-ring. The sealing ring 43 is located around the sealing gasket 41, at the outermost edge of the stepped structure. For example, an annular mounting groove 430 is machined on the outermost stepped surface of the connecting pipe 3, into which the sealing ring 43 is embedded, forming a compression seal with the corresponding plane of the evaporation source 2. Exemplarily, the sealing ring 43 is made of a high-temperature resistant material, such as a metal alloy or ceramic composite material. The sealing ring 43 can also work with a cooling structure to maintain its operating temperature ≤300°C. As the outermost line of defense, the sealing ring 43 can block possible leakage channels around the sealing gasket, achieving multiple seals from the stepped structure, the sealing gasket, and the sealing ring. In addition, by observing the compression deformation of the sealing ring 43, such as whether the edge protrudes evenly, it is possible to directly determine whether the installation is in place without the need for additional testing equipment, thus improving assembly efficiency. The elastic properties of the sealing ring 43 can compensate for the difference in thermal expansion between the evaporation source and the connecting pipe at high temperatures, avoiding sealing failure due to inconsistent deformation.

[0043] Furthermore, the vapor deposition apparatus 100 also includes a cooling structure 5, which is disposed on the side of the sealing ring 43 near the connecting pipe 3, and is used to cool the sealing ring 43.

[0044] In some embodiments, the cooling structure 5 is disposed on the side of the sealing ring 43 near the evaporation source 2. Alternatively, cooling structures 5 are disposed on both sides of the sealing ring 43.

[0045] Specifically, the cooling structure 5 can be a built-in pipe or flow channel, through which process cooling water or other cooling media are introduced. During the circulating flow, it absorbs high-temperature radiant heat, cooling the sealing ring 43. The cooling structure 5 enables the sealing ring 43 to operate stably in a 1300℃ vapor deposition environment. The combination of the cooling structure and high-temperature resistant materials expands the applicable temperature range of the sealing solution. This reduces the aging rate of the sealing ring under long-term high temperatures, decreases the risk of leakage due to material carbonization, and extends the equipment maintenance cycle.

[0046] In some embodiments, the evaporation source 2 includes a first mounting platform 201, which is disposed at one end of the evaporation source 2 near the connecting pipe 3. The connecting pipe 3 includes a second mounting platform 301, which is disposed at one end of the connecting pipe 3 near the evaporation source 2. A first stepped structure 21 is disposed on the first mounting platform 201, a second stepped structure 31 is disposed on the second mounting platform 301, and a cooling structure 5 is disposed within the first mounting platform 201 and / or the second mounting platform 301.

[0047] Specifically, the stepped structure, sealing gaskets, sealing rings, and cooling pipes are all integrated within the mounting platform to form a sealing module. Additionally, the cooling structure 5 is integrated inside the mounting platform, occupying no extra space and suitable for compact vapor deposition equipment designs. Specifically, serpentine or annular pipes can be machined inside the mounting platform, with the pipe inlet connecting to the external cooling system and the outlet returning to the cooling source, forming a circulating cooling loop.

[0048] In some embodiments, the evaporation source 2 includes a first central channel 202 that extends through the first mounting platform 201. The connecting pipe 3 includes a second central channel 302 that extends through the second mounting platform 301. The second central channel 302 is connected to and intersects with the first central channel 202, and a sealing gasket 41 is disposed around the first central channel 202 and the second central channel 302.

[0049] Specifically, the first central channel 202 and the second central channel 302 are transport channels for the vapor-deposited material (such as small organic molecules). A stepped structure and sealing gaskets are arranged around the periphery of the central channels, forming a layout combining central transport and peripheral sealing. For example, the first central channel 202 passes through the mounting platform of the evaporation source, and the second central channel 302 of the connecting pipe is aligned with this channel to ensure smooth material flow. The sealing gasket 41 covers the stepped surface of the stepped structure and is located outside the central channel to prevent material leakage from the channel interface without affecting material flow. This separation of material transport and sealing functions ensures minimal fluid resistance in the central channel while preventing leakage through the peripheral sealing structure. For example, the graphite foil gasket only contacts the stepped surface and does not directly contact the high-temperature material, avoiding material contamination. If local pressure increases in the central channel due to material deposition, the multi-layered barrier of the peripheral sealing structure effectively blocks leakage, preventing material from entering the vacuum chamber and affecting vapor deposition uniformity. Since the sealing gasket is located on the periphery of the channel, it can be replaced by removing the mounting platform without contacting the interior of the central channel, reducing the risk of material residue during cleaning.

[0050] Figure 3 This is a partial enlarged view of the vapor deposition apparatus provided in another embodiment of this application. (See reference...) Figure 3As shown, the first stepped structure 21 includes a first step surface 211 and a third step surface 212 that are not coplanar, with the third step surface 212 located on the side of the first step surface 211 away from the first central channel 202; the second stepped structure 31 includes a second step surface 311 and a fourth step surface 312 that are not coplanar, with the fourth step surface 312 located on the side of the second step surface 311 away from the second central channel 302, the second step surface 311 and the first step surface 211 being opposite to each other, and the fourth step surface 312 and the second step surface 311 being opposite to each other; the sealing gasket 41 includes a first gasket 411 and a second gasket 412, with the first gasket 411 located between the first step surface 211 and the second step surface 311, and the second gasket 412 located between the second step surface 311 and the fourth step surface 312. Specifically, the first step surface 211 is closer to the central channel, and the third step surface 212 is located on the outer side, forming two steps, inner and outer. The second step surface 311 of the second-step structure faces the first step surface 211, and the fourth step surface 312 faces the third step surface 212, forming two pairs of sealing interfaces. The first gasket 411 fills the gap between the inner steps, mainly preventing the leakage of small molecule materials. The second gasket 412 fills the gap between the outer steps, preventing large molecule particles or solid impurities that may pass through the inner layer. The material must pass through two steps and two gaskets sequentially, overcoming angular barriers and material resistance at each layer, resulting in an exponential decrease in the probability of leakage. If a leak occurs, the type of leak (e.g., gaseous or solid) can be quickly determined by detecting the contamination level of the inner or outer gaskets, facilitating targeted adjustments to process parameters.

[0051] Furthermore, the first stepped structure 21 includes a fifth step surface 213, which is located on the side of the third step surface 212 away from the first central channel 202 and is not coplanar with the third step surface 212 and the first step surface 211; the second stepped structure 31 includes a sixth step surface 313, which is located on the side of the fourth step surface 312 away from the second central channel 302 and is not coplanar with the fourth step surface 312 and the second step surface 311; the sixth step surface 313 is arranged opposite to the fifth step surface 213; the sealing gasket 41 includes a third gasket 413, which is located between the fifth step surface 213 and the sixth step surface 313. Based on the double-step structure, a third step formed by the fifth step surface 213 and the sixth step surface 313 is further added outwards, forming a three-step structure. The third gasket 413 fills the gap of the outermost step, further extending the leakage path. The contoured design of the fifth step surface 213 and the sixth step surface 313 ensures uniform pressure on the third gasket 413, preventing seal failure due to step misalignment. The three-layer step and three-layer gasket design increases the leakage path from two barriers to three barriers, making it suitable for scenarios with higher sealing requirements (such as high-resolution OLED panel vapor deposition). The increased number of gasket layers also enhances the sealing effect. Furthermore, the outermost step can withstand some assembly stress, reducing the load on the inner steps and preventing the inner gasket from cracking due to excessive compression. The three-layer structure is compatible with different vapor deposition materials (such as highly volatile substances), and by increasing the outer sealing layer, it prevents high vapor pressure materials from breaching the inner barrier.

[0052] It is understandable that the first step structure 21 and the second step structure 31 can also use more steps.

[0053] refer to Figure 3 As shown, the first stepped structure 21 includes a first mounting surface 214, which is not coplanar with the third step surface 212 and the first step surface 211; the second stepped structure 31 includes a second mounting surface 314, which is not coplanar with the fourth step surface 312 and the second step surface 311; the sealing ring 43 is located between the first mounting surface 214 and the second mounting surface 314. Specifically, the first mounting surface 214 and the second mounting surface 314 are the outermost planes of the stepped structure and are in contact with the sealing ring 43. For example, the first mounting surface 214 and the second mounting surface 314 are flat annular planes. Since the mounting surfaces are located on the outside of the stepped structure and the sealing ring is on the outermost layer, its compression state (such as whether it deforms uniformly) can be directly inspected visually without disassembling the internal stepped structure, further improving installation efficiency.

[0054] Furthermore, a mounting groove 430 is provided on the first mounting surface 214 and / or the second mounting surface 314, and the sealing ring 43 is at least partially located within the mounting groove 430. The mounting groove 430 is an annular groove with a depth less than the diameter of the sealing ring, such as half the diameter of the sealing ring, ensuring that the edge of the sealing ring is slightly higher than the mounting surface after insertion, facilitating compression sealing. For example, the second mounting surface 314 of the connecting pipe 3 is machined to form an annular mounting groove 430. After the sealing ring 43 is placed in, the first mounting surface 214 of the evaporator source presses down, causing the sealing ring to be partially squeezed into the groove and partially protruding to form a sealing lip. The groove wall of the mounting groove 430 can restrict the radial movement of the sealing ring, preventing the sealing ring from twisting or falling off during assembly. The mounting groove provides a precise installation position for the sealing ring, avoiding offset errors during manual assembly and ensuring uniform sealing.

[0055] In one embodiment, the first step surface 211 and the third step surface 212 are located on the side of the first mounting surface 214 near the connecting pipe 3, with the first step surface 211 located on the side of the third step surface 212 near the connecting pipe 3. Specifically, on the first mounting surface 214 of the evaporation source 2, the inner step (first step surface 211) is close to the connecting pipe 3, and the outer step (third step surface 212) is away from the connecting pipe 3, forming a raised stepped structure. For example, the first mounting surface is a circular plane, the first step surface is an inner annular protrusion, and the third step surface is an outer annular protrusion, with different radii, forming two layers of steps. Correspondingly, the second step surface 311 and the fourth step surface 312 are located on the side of the second mounting surface 314 away from the evaporation source 2, with the second step surface 311 located on the side of the fourth step surface 312 away from the evaporation source 2, forming a recessed stepped structure. In another embodiment, such as... Figure 4 As shown, the first step surface 211 and the third step surface 212 are located on the side of the first mounting surface 214 away from the connecting pipe 3, and the first step surface 211 is located on the side of the third step surface 212 away from the connecting pipe 3. Correspondingly, the second step surface 311 and the fourth step surface 312 are located on the side of the second mounting surface 314 close to the evaporation source 2, and the second step surface 311 is located on the side of the fourth step surface 312 close to the evaporation source 2, forming a concave stepped structure.

[0056] For example, the inner step is closer to the high-temperature region of the evaporation source and uses graphite foil gaskets with stronger high-temperature resistance; the outer step has a lower temperature and can use gaskets of conventional specifications, reducing material costs.

[0057] In some embodiments, the vapor deposition apparatus 100 further includes a plurality of nozzles 6 connected to a connecting pipe 3 for vapor deposition of a material onto a substrate. Specifically, the nozzles 6 are evenly distributed at the end of the connecting pipe 3, communicating with a first central channel 202 and a second central channel 302. The vapor deposition material is transported to the nozzles through the central channels and ejected in a gaseous or particulate state. For example, the even arrangement of multiple nozzles ensures uniform vapor deposition. The sealing structure prevents material leakage in the transmission path (such as the interface between the connecting pipe and the evaporation source), ensuring that all material is ejected through the nozzles, avoiding waste and contamination. The zero-leakage design of the nozzles in conjunction with the sealing structure stabilizes the material flow rate and ensures uniform ejection pressure, improving the pixel consistency of the OLED display panel (such as the uniformity of RGB light-emitting layer thickness). Different vapor deposition materials (such as small molecule organics and metal electrode materials) can be adapted by replacing nozzles with different orifice diameters, expanding the applicability of the equipment. The sealing structure prevents external particles from entering the connecting pipe, preventing vapor deposition defects (such as pixel dark spots) caused by nozzle blockage due to foreign objects.

[0058] In some embodiments, the vapor deposition apparatus 100 further includes fasteners for connecting the evaporation source 2 and the connecting pipe 3. Specifically, the fasteners are high-temperature alloy screws, and multiple fasteners are evenly distributed along the circumference of the first mounting platform 201 and the second mounting platform 301. By tightening the fasteners to a preset torque using a torque wrench, a tight fit between the first stepped structure 21 and the second stepped structure 31 is ensured.

[0059] The assembly process of the vapor deposition apparatus 100 is as follows: first, install the sealing gasket 41 and sealing ring 43; then align the evaporation source 2 and connecting pipe 3; tighten the fasteners in sequence; and finally, confirm the assembly accuracy by measuring the spacing. The fasteners provide continuous axial pressure to counteract the stress relaxation caused by the thermal expansion of the material at high temperatures, maintaining a stable sealing gap between the first stepped structure 21 and the second stepped structure 31. The fastener connection facilitates circumferentially evenly distributed fasteners to avoid localized stress concentration, preventing deformation of the stepped structure or gasket damage due to uneven stress, and ensuring long-term reliable sealing performance.

[0060] Overall, the vapor deposition apparatus 100 mainly consists of an evaporation source 2, a connecting pipe 3, and a sealing structure 4. The contact surfaces of the evaporation source and the connecting pipe are respectively equipped with matching first and second stepped structures. The sealing structure includes a sealing gasket 41 located between the stepped structures, an outer sealing ring 43, and optional sealing protrusions 42. A cooling structure 5 can cool the sealing ring. A central channel runs through the evaporation source and the connecting pipe for material transport. A nozzle 6 is connected to the connecting pipe, and fasteners connect the components. The working principle of the vapor deposition apparatus 100 is as follows: the material heated by the evaporation source vaporizes and flows through the central channel to the connecting pipe, where it is sprayed out through the nozzle and deposited onto the substrate. The stepped structure and the sealing material form a multi-layer barrier to prevent material leakage. The sealing ring provides a secondary seal on the periphery, and the cooling structure ensures the performance of the sealing ring. Specifically, the combination of multi-layered steps and sealing materials reduces the leakage rate; the visibility of the sealing ring installation status improves assembly efficiency; the cooling structure expands high-temperature resistance; the modular design facilitates maintenance; and the layout of the central channel and nozzles ensures uniform vapor deposition, thus improving overall equipment reliability and panel yield.

[0061] The vapor deposition apparatus 100 provided in this application embodiment can be used to prepare a display panel 10. For example, an organic light-emitting material can be heated and vaporized by an evaporation source, and then uniformly sprayed out through a connecting pipe to a nozzle, depositing a light-emitting layer on a substrate. A sealing structure ensures the stability and precision of the vapor deposition process. The deposited light-emitting layer is combined with the driving circuit (TFT), electrode layer (e.g., anode or cathode), encapsulation layer, and other structures on the substrate to finally form an OLED display panel with self-emissive properties. The sealing performance of the vapor deposition apparatus directly affects the uniformity of the light-emitting layer and the panel yield. Exemplarily, the evaporation source 2 is a vapor deposition crucible. Using vertical vapor deposition technology, the light-emitting material is vaporized into the isolation opening through the evaporation source 2 at a specific vapor deposition angle to obtain the light-emitting layer.

[0062] Figure 5 This is a schematic diagram of the structure of a display panel 10 fabricated by a vapor deposition apparatus 100 according to an embodiment of this application. The display panel 10 can be an organic light-emitting diode (OLED) display panel or a quantum dot light-emitting diode (QLED) display panel. The display panel 10 includes a display area AA with display function and a non-display area NA.

[0063] The display area AA of the display panel 10 can be rectangular, square, circular, oval, or other shapes.

[0064] The display area AA includes a plurality of pixels PX arranged in the X and Y directions. Each pixel PX includes a plurality of sub-pixels SPX displaying different colors. In some embodiments, a pixel PX includes a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. For example, the first sub-pixel SPX1 is a blue sub-pixel, the second sub-pixel SPX2 is a green sub-pixel SPX2, and the third sub-pixel SPX3 is a red sub-pixel SPX3. In some embodiments, in addition to sub-pixels SPX1, SPX2, and SPX3, a pixel PX also includes sub-pixels SPX that emit white or other colors of light.

[0065] A sub-pixel (SPX) includes a pixel circuit and a light-emitting device driven by the pixel circuit to emit light of the corresponding color. The first sub-pixel (SPX1) includes a first light-emitting device, the second sub-pixel (SPX2) includes a second light-emitting device, and the third sub-pixel (SPX3) includes a third light-emitting device. One pixel circuit drives at least one light-emitting device to emit light. For example, the display area AA includes a normal display area and a light-transmitting display area. The light-transmitting display area is a display area set according to a corresponding sensor and has light-transmitting properties, while the normal display area is a display area not set according to a corresponding sensor. In the normal display area, one pixel circuit drives one light-emitting device to emit light, and in the light-transmitting display area, one pixel circuit drives one or more light-emitting devices to emit light.

[0066] In one embodiment, Figure 6 It shows Figure 5 A schematic diagram of a partial cross-sectional structure of the film layer in the BB direction of a local area of ​​the display panel 10. (Reference) Figure 6 The display panel 10 includes a substrate 11, an isolation structure 12, and multiple light-emitting devices 13.

[0067] refer to Figure 7 The substrate 11 includes a pixel circuit layer and a planarization layer 19. The pixel circuit layer includes pixel circuits for driving the light-emitting device 13 to emit light. Figure 7 A transistor 18 in a pixel circuit is shown. A via is provided in the planarization layer 19, and a first electrode 131 is electrically connected to the transistor 18 in the pixel circuit layer through the via. Furthermore, the pixel circuit layer includes at least one insulating layer, which may include at least one of an inorganic layer and an organic layer. Additionally, the substrate 11 includes scan lines providing the scan signal Scan and data lines providing the data signal Data to the pixel circuit.

[0068] refer to Figure 8The pixel circuit includes a driving transistor T1 and a data transistor T2. The source of the data transistor T2 is connected to the data line that provides the data signal Data, the gate of the data transistor T2 is connected to the scan line that provides the scan signal Scan, and the drain of the data transistor T2 is connected to the gate of the driving transistor T1. The two ends of the storage capacitor C1 are respectively connected to the gate and the source of the driving transistor T1, and the drain of the driving transistor T1 is connected to the light-emitting device 13. Figure 8 This is one embodiment of a pixel circuit, but the pixel circuit described in this application is not limited to this one. Figure 8 The 2T1C pixel circuit shown can also be other pixel circuits, such as 7T1C, 8T1C pixel circuits, etc.

[0069] refer to Figure 6 and Figure 10 An isolation structure 12 is located on one side of the substrate 11 and encloses a plurality of isolation openings 12a, including a plurality of first isolation openings 12a1, a plurality of second isolation openings 12a2, and a plurality of third isolation openings 12a3. A plurality of light-emitting devices 13 are located on one side of the substrate 11 and include a plurality of first light-emitting devices 13a, a plurality of second light-emitting devices 13b, and a plurality of third light-emitting devices 13c. The first light-emitting devices 13a are disposed corresponding to the first isolation opening 12a1, the second light-emitting devices 13b are disposed corresponding to the second isolation opening 12a2, and the third light-emitting devices 13c are disposed corresponding to the third isolation opening 12a3. In one embodiment, one light-emitting device 13 is disposed corresponding to one isolation opening 12a. For example, the first light-emitting devices 13a are disposed one-to-one with the first isolation opening 12a1, the second light-emitting devices 13b are disposed one-to-one with the second isolation opening 12a2, and the third light-emitting devices 13c are disposed one-to-one with the third isolation opening 12a3. At least a portion of the first light-emitting device 13a is disposed within a corresponding first isolation opening 12a1, at least a portion of the second light-emitting device 13b is disposed within a corresponding second isolation opening 12a2, and at least a portion of the third light-emitting device 13c is disposed within a corresponding third isolation opening 12a3. In another embodiment, multiple light-emitting devices 13 are correspondingly disposed with one isolation opening 12a; for example, multiple light-emitting devices with the same emission color are corresponding to one isolation opening 12a.

[0070] In one example, the isolation structure 12 includes an isolation portion 122 and a blocking portion 121 stacked along a direction away from the substrate 11 (i.e., the Z direction), with the width of the blocking portion 121 being greater than the width of the isolation portion 122. Thus, the two ends of the blocking portion 121 protrude compared to the sides of the isolation portion 122, and this shape of the isolation structure 12 is also referred to as a pendant shape. The isolation portion 122 and the blocking portion 121 are made of different materials, and the etching rate of the blocking portion 121 is lower than that of the isolation portion 122. The material of the isolation portion 122 includes a conductive material, specifically including at least one of aluminum (Al), aluminum alloys, and aluminum alloys including at least one of aluminum-neodymium alloy (AlNd), aluminum-yttrium alloy (AlY), or aluminum-silicon alloy (AlSi). The blocking portion 121 can be a single-layer structure or a multi-layer structure. If the blocking portion 121 is a single-layer structure, the material of the blocking portion 121 can include at least one of titanium, titanium nitride, molybdenum, tungsten, molybdenum-tungsten alloy, or molybdenum-niobium alloy. When the blocking part 121 has a multi-layer structure, one layer of the blocking part 121 is made of at least one of titanium, titanium nitride, molybdenum, tungsten, molybdenum-tungsten alloy or molybdenum-niobium alloy, and the other layer of the blocking part 121 may be made of conductive oxide or inorganic insulating material, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0071] In some embodiments, reference Figure 10 The isolation structure 12 may further include a base 123 located on the side of the isolation portion 122 near the substrate 11. The base 123 protrudes relative to the isolation portion 122 in the direction toward the isolation opening 12a, and the orthographic projection of the isolation portion 122 on the substrate 11 lies within the orthographic projection of the base 123 on the substrate 11. The material of the base 123 may include at least one of molybdenum (Mo), titanium (Ti), titanium nitride (TiN), molybdenum-tungsten alloy (MoW), or molybdenum-niobium alloy (MoNb).

[0072] In one embodiment, the display panel 10 may further include a pixel defining layer 17, and an isolation structure 12 is disposed on the pixel defining layer 17. The pixel defining layer 17 has pixel openings communicating with the isolation openings 12a. Specifically, the pixel defining layer 17 has a first pixel opening communicating with a first isolation opening 12a1, a second pixel opening communicating with a second isolation opening 12a2, and a third pixel opening communicating with a third isolation opening 12a3. The areas of the orthographic projections of the first pixel opening, the second pixel opening, and the third pixel opening on the substrate 11 may be the same or different. The shapes of the orthographic projections of the pixel openings and the corresponding isolation openings 12a on the substrate 11 may be the same or different. Generally, the area of ​​the orthographic projection of the isolation opening 12a on the substrate 11 is larger than the area of ​​the orthographic projection of the pixel opening communicating with the isolation opening 12a on the substrate 11. The orthographic projections of the pixel openings of the light-emitting device 13 on the substrate 11 overlap with the orthographic projections of the isolation openings 12a on the substrate 11. The pixel defining layer 17 is made of an inorganic material, such as an inorganic insulating material formed by using at least one of silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0073] In another embodiment, the isolation structure 12 is disposed within the recess of the pixel limiting layer 17. Alternatively, the pixel limiting layer 17 may not be provided in the display panel 10, and the isolation structure 12 may be disposed on one side of the substrate 11, with the isolation structure 12 in contact with one side of the substrate 11.

[0074] The first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c each emit light of different colors. Each of these devices includes a first electrode 131, a light-emitting layer 132, and a second electrode 133 stacked together. The first electrode 131 is disposed on the substrate 11, and a pixel defining layer 17 covers the end of the first electrode 131. A pixel opening is provided on the pixel defining layer 17, through which the first electrode 131 is exposed. The light-emitting layer 132 of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c covers the sidewall of the pixel opening of the pixel defining layer 17 and the side of the pixel defining layer 17 facing away from the substrate 11. Each light-emitting layer 132 is located within the pixel opening and is in contact with the first electrode 131.

[0075] The second electrodes 133 of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c respectively cover the corresponding light-emitting layer 132. The second electrodes 133 are electrically connected to the isolation structure 12. For example, the second electrodes 133 are connected to the isolation portion 122 of the isolation structure 12, and / or the second electrodes 133 are connected to the base portion 123 of the isolation structure 12.

[0076] The first electrode 131 can be an anode, and the second electrode 133 can be a cathode. The first electrode 131 of each light-emitting device 13 can be connected to the pixel circuit through a via, so that the pixel circuit drives the light-emitting device 13 to emit light.

[0077] The first electrode 131 may include a multilayer structure, such as a reflective layer and a pair of conductive oxide layers covering the upper and lower surfaces of the reflective layer, respectively. The reflective layer can be formed, for example, using silver, a metallic material with excellent light reflectivity. Each conductive oxide layer can be formed, for example, from a transparent conductive oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or IGZO (Indium Gallium Zinc Oxide). The second electrode 133 is formed, for example, from a metallic material such as an alloy of magnesium and silver (MgAg).

[0078] Figure 11 This is a schematic diagram of a light-emitting layer 132 according to an embodiment of this application. The light-emitting layer 132 of at least one of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, a light-emitting material layer EML, a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL stacked along a direction away from the substrate 11 (i.e., the Z direction). The light-emitting layer 132 may include a single light-emitting material layer EML, or a stacked light-emitting layer including multiple light-emitting material layers EML.

[0079] In order for the light-emitting layer 132 to emit light, a pixel voltage is provided to the first electrode 131 and a common voltage is provided to the second electrode 133, forming a potential difference between the first electrode 131 and the second electrode 133, causing the light-emitting layer 132 disposed between the first electrode 131 and the second electrode 133 to emit light. In one embodiment, if a potential difference is formed between the first electrode 131 and the second electrode 133 of the first light-emitting device 13a, the light-emitting material layer EML of the light-emitting layer 132 emits blue light; if a potential difference is formed between the first electrode 131 and the second electrode 133 of the second light-emitting device 13b, the light-emitting material layer EML of the light-emitting layer 132 emits green light; and if a potential difference is formed between the first electrode 131 and the second electrode 133 of the third light-emitting device 13c, the light-emitting material layer EML of the light-emitting layer 132 emits red light.

[0080] In this configuration, the pixel voltage of the first electrode 131 is provided by the pixel circuit 1, and the common voltage of the second electrode 133 is provided by the isolation structure 12. Specifically, the second electrode 133 is electrically connected to the isolation structure 12, and the common voltage is supplied to the second electrode 133 by providing the isolation structure 12. That is, the isolation structure 12 has the function of supplying a common voltage to the second electrode 133.

[0081] The display panel 10 also includes a first encapsulation layer, which includes a plurality of encapsulation portions 14. The encapsulation portions 14 are located on the side of the second electrode 133 facing away from the substrate 11, and extend through the sidewall of the isolation structure 12 to the side of the isolation structure 12 facing away from the substrate 11. The plurality of encapsulation portions 14 include a plurality of first encapsulation portions 14a corresponding to a plurality of first light-emitting devices 13a, a plurality of second encapsulation portions 14b corresponding to a plurality of second light-emitting devices 13b, and a plurality of third encapsulation portions 14c corresponding to a plurality of third light-emitting devices 13c. The first encapsulation portions 14a are disposed on the side of the corresponding first light-emitting device 13a facing away from the substrate 11, the second encapsulation portions 14b are disposed on the side of the corresponding second light-emitting device 13b facing away from the substrate 11, and the third encapsulation portions 14c are disposed on the side of the corresponding third light-emitting device 13c facing away from the substrate 11.

[0082] like Figure 12 As shown, the display panel 10 further includes a second encapsulation layer 15 and a third encapsulation layer 16. The second encapsulation layer 15 covers the isolation structure 12 and the encapsulation portion 14, and the third encapsulation layer 16 covers the second encapsulation layer 15. Both the first encapsulation layer and the third encapsulation layer 16 are inorganic materials, and the materials of the first encapsulation layer and the third encapsulation layer 16 include at least one of silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON). The second encapsulation layer 15 is an organic insulating material, such as epoxy resin, acrylic resin, or other resin materials. The second encapsulation layer 15 and the third encapsulation layer 16 are continuously disposed at least over the entire display area AA, with a portion also disposed in the bezel area NA. The display panel 10 may also include at least one film layer such as a touch layer, a polarizer, a color filter substrate, and a protective cover. This film layer may also be bonded to the display panel via an adhesive layer such as OCA (Optical Clear Adhesive).

[0083] Figure 13 A flowchart illustrating a vapor deposition method according to another embodiment of this application. (See reference...) Figure 13 As shown, another embodiment of this application provides a vapor deposition method, which can be used to prepare a display panel 10. The vapor deposition method includes the following steps: Step S10: Connect the evaporation source 2 and the connecting pipe 3, which are set opposite to each other. The end of the evaporation source 2 near the connecting pipe 3 is provided with a first stepped structure 21, and the end of the connecting pipe 3 near the evaporation source 2 is provided with a second stepped structure 31. The shapes of the first stepped structure 21 and the second stepped structure 31 are matched, and a sealing structure 4 is provided between the first stepped structure 21 and the second stepped structure 31.

[0084] Step S20: Align the substrate 11 with the evaporation source 2. An isolation structure 12 is provided on one side of the substrate 11. The isolation structure 12 encloses and forms an isolation opening 12a. The evaporation source 2 deposits light-emitting material into the isolation opening 12a to form a light-emitting layer 132.

[0085] The vapor deposition method provided in this application ensures stable material transport under high temperature and vacuum by setting a stepped structure and a sealing structure between the evaporation source and the connecting pipe. Then, the luminescent material is precisely vapor-deposited to form a luminescent layer by utilizing the isolation opening enclosed by the substrate isolation structure. This achieves high-precision deposition of the luminescent material and has the technical effects of low leakage rate, good vapor deposition uniformity, high yield, strong process compatibility, low cost, and high efficiency. It provides a reliable solution for FMM-free vapor deposition of large-size high-resolution OLED display panels.

[0086] Specifically, the sealing structure 4 includes a sealing gasket 41, which is located between the first stepped structure 21 and the second stepped structure 31. Exemplarily, the sealing gasket 41 is a graphite foil. Graphite foil is heat-resistant up to 1500°C and possesses both lubricating and sealing properties. The graphite foil fills the gaps in the stepped structure, utilizing its flexibility to fill microscopic unevenness and form a solid sealing layer. For example, embedding a graphite foil gasket between each step surface of the stepped structure ensures that the gasket covers the step surface, preventing leakage caused by localized gaps. The layered structure of the graphite foil can adsorb gas molecules, further reducing the leakage rate in conjunction with the path barrier of the stepped structure. The graphite foil remains stable even in a vacuum environment at 1300°C, preventing the failure of traditional rubber seals due to high-temperature carbonization. Simultaneously, its low coefficient of friction facilitates assembly and reduces wear on the stepped structure.

[0087] The sealing structure 4 also includes a sealing protrusion 42, which is disposed on the step surface of the second stepped structure 31 and located between the second stepped structure 31 and the sealing gasket 41. Alternatively, the sealing protrusion 42 is disposed on the step surface of the first stepped structure 21 and located between the first stepped structure 21 and the sealing gasket 41. Of course, it is understood that sealing protrusions 42 can be disposed on both the step surface of the first stepped structure 21 and the step surface of the second stepped structure 31, and the two sealing protrusions 42 can be staggered.

[0088] Specifically, the sealing protrusion 42 can be a strip-shaped or annular protrusion made of metal, perpendicular to the step surface. For example, a protrusion can be machined on the step surface of the first stepped structure 21 and embedded in the sealing gasket 41, or a groove can be provided at the corresponding position of the second stepped structure 31 to form a protrusion-groove interlocking structure. The sealing protrusion 42 can penetrate or press into the sealing gasket 41, increasing the mechanical connection strength between the sealing gasket 41 and the stepped structure, and preventing the sealing gasket 41 from shifting or falling off at high temperatures.

[0089] In one specific embodiment, the sealing structure 4 includes a sealing ring 43. The sealing ring 43 surrounds the sealing gasket 41. The sealing ring 43 is located on the periphery of the sealing gasket 41, at the outermost edge of the stepped structure. For example, an annular mounting groove 430 is machined on the outer side of the outermost stepped surface of the connecting pipe 3, into which the sealing ring 43 is embedded, forming a compression seal with the corresponding plane of the evaporation source 2. Exemplarily, the sealing ring 43 is made of a high-temperature resistant material, such as a metal alloy or ceramic composite material. The sealing ring 43 can also cooperate with a cooling structure to maintain its operating temperature ≤300°C.

[0090] Furthermore, the vapor deposition apparatus 100 also includes a cooling structure 5, which is disposed on the side of the sealing ring 43 near the connecting pipe 3, and is used to cool the sealing ring 43.

[0091] In other embodiments, the cooling structure 5 is disposed on the side of the sealing ring 43 near the evaporation source 2. Alternatively, cooling structures 5 are disposed on both sides of the sealing ring 43. Specifically, the cooling structure 5 may be an internal pipe or flow channel through which process cooling water or other cooling media are introduced. During the flow process, it can absorb high-temperature radiant heat and cool the sealing ring 43.

[0092] In some embodiments, the evaporation source 2 includes a first mounting platform 201, which is disposed at one end of the evaporation source 2 near the connecting pipe 3. The connecting pipe 3 includes a second mounting platform 301, which is disposed at one end of the connecting pipe 3 near the evaporation source 2. A first stepped structure 21 is disposed on the first mounting platform 201, a second stepped structure 31 is disposed on the second mounting platform 301, and a cooling structure 5 is disposed within the first mounting platform 201 and / or the second mounting platform 301.

[0093] Specifically, the stepped structure, sealing gaskets, sealing rings, and cooling pipes are all integrated within the mounting platform to form a sealing module. Additionally, the cooling structure 5 is integrated inside the mounting platform, occupying no extra space and suitable for compact vapor deposition equipment designs. Specifically, serpentine or annular pipes can be machined inside the mounting platform, with the pipe inlet connecting to the external cooling system and the outlet returning to the cooling source, forming a circulating cooling loop.

[0094] In some embodiments, the evaporation source 2 includes a first central channel 202 that extends through the first mounting platform 201. The connecting pipe 3 includes a second central channel 302 that extends through the second mounting platform 301. The second central channel 302 is connected to and intersects with the first central channel 202, and a sealing gasket 41 is disposed around the first central channel 202 and the second central channel 302.

[0095] Specifically, the first central channel 202 and the second central channel 302 are the transmission channels for the vapor-deposited material. A stepped structure and a sealing gasket are arranged around the periphery of the central channels, forming a layout of central transmission combined with peripheral sealing. For example, the first central channel 202 passes through the mounting platform of the evaporation source, and the second central channel 302 of the connecting pipe is aligned with this channel to ensure smooth material flow. The sealing gasket 41 covers the stepped surface of the stepped structure and is located outside the central channel to prevent material leakage from the channel interface without affecting material flow.

[0096] In some embodiments, the first stepped structure 21 includes a first step surface 211 and a third step surface 212 that are not coplanar, with the third step surface 212 located on the side of the first step surface 211 away from the first central channel 202; the second stepped structure 31 includes a second step surface 311 and a fourth step surface 312 that are not coplanar, with the fourth step surface 312 located on the side of the second step surface 311 away from the second central channel 302, the second step surface 311 being disposed opposite to the first step surface 211, and the fourth step surface 312 being disposed opposite to the second step surface 311; the sealing gasket 41 includes a first gasket 411 and a second gasket 412, with the first gasket 411 located between the first step surface 211 and the second step surface 311, and the second gasket 412 located between the second step surface 311 and the fourth step surface 312.

[0097] Specifically, the first step surface 211 is close to the central channel, and the third step surface 212 is located on the outside, forming two levels of steps, inner and outer. The second step surface 311 of the second stepped structure is opposite to the first step surface 211, and the fourth step surface 312 is opposite to the third step surface 212, forming two pairs of sealing interfaces. The first gasket 411 fills the gaps between the inner steps, mainly preventing leakage of small molecule materials. The second gasket 412 fills the gaps between the outer steps, preventing large molecule particles or solid impurities that may pass through the inner layer. The material must pass through two steps and two gaskets sequentially, overcoming angular barriers and material resistance at each layer, resulting in an exponential decrease in the probability of leakage. If leakage occurs, the type of leakage (e.g., gaseous or solid) can be quickly determined by detecting the contamination level of the inner or outer gaskets, facilitating targeted adjustments to process parameters.

[0098] Furthermore, the first stepped structure 21 includes a fifth step surface 213, which is located on the side of the third step surface 212 away from the first central channel 202 and is not coplanar with the third step surface 212 and the first step surface 211; the second stepped structure 31 includes a sixth step surface 313, which is located on the side of the fourth step surface 312 away from the second central channel 302 and is not coplanar with the fourth step surface 312 and the second step surface 311; the sixth step surface 313 is disposed opposite to the fifth step surface 213; the sealing gasket 41 includes a third gasket 413, which is located between the fifth step surface 213 and the sixth step surface 313.

[0099] Based on the double-step structure, a third step is further added outward, forming a three-step structure with a fifth step surface 213 and a sixth step surface 313. A third gasket 413 fills the gap between the outermost steps, further extending the leakage path. The contoured design of the fifth step surface 213 and the sixth step surface 313 ensures uniform pressure on the third gasket 413, preventing seal failure due to step misalignment. The three-step and three-gasket structure increases the leakage path from two barriers to three barriers, making it suitable for scenarios with higher sealing requirements (such as high-resolution OLED panel deposition). The increased number of gasket layers also enhances the sealing effect. Furthermore, the outermost step can withstand some assembly stress, reducing the load on the inner steps and preventing the inner gasket from cracking due to excessive compression. The three-layer structure is compatible with different deposition materials (such as highly volatile substances), and by increasing the outer sealing layer, it prevents high-vapor-pressure materials from breaching the inner barrier.

[0100] It is understandable that the first step structure 21 and the second step structure 31 can also use more steps.

[0101] refer to Figure 3 As shown, the first stepped structure 21 includes a first mounting surface 214, which is not coplanar with the third step surface 212 and the first step surface 211; the second stepped structure 31 includes a second mounting surface 314, which is not coplanar with the fourth step surface 312 and the second step surface 311; the sealing ring 43 is located between the first mounting surface 214 and the second mounting surface 314.

[0102] Specifically, the first mounting surface 214 and the second mounting surface 314 are the outermost planes of the stepped structure, which contact the sealing ring 43. For example, the first mounting surface 214 and the second mounting surface 314 are flat annular planes. The mounting surfaces are located on the outside of the stepped structure, and the sealing ring is located on the outermost layer. Its compression state (such as whether it is uniformly deformed) can be directly inspected by visual inspection without disassembling the internal stepped structure, further improving installation efficiency.

[0103] Furthermore, a mounting groove 430 is provided on the first mounting surface 214 and / or the second mounting surface 314, and the sealing ring 43 is at least partially located within the mounting groove 430.

[0104] In one embodiment, the first step surface 211 and the third step surface 212 are located on the side of the first mounting surface 214 near the connecting pipe 3, and the first step surface 211 is located on the side of the third step surface 212 near the connecting pipe 3.

[0105] Specifically, on the first mounting surface 214 of the evaporation source 2, the inner step (first step surface 211) is close to the connecting pipe 3, and the outer step (third step surface 212) is away from the connecting pipe 3, forming a raised stepped structure. For example, the first mounting surface is a circular plane, the first step surface is an inner annular protrusion, and the third step surface is an outer annular protrusion, with different radii, forming two steps. Correspondingly, the second step surface 311 and the fourth step surface 312 are located on the side of the second mounting surface 314 away from the evaporation source 2, and the second step surface 311 is located on the side of the fourth step surface 312 away from the evaporation source 2, forming a recessed stepped structure.

[0106] In another embodiment, such as Figure 4 As shown, the first step surface 211 and the third step surface 212 are located on the side of the first mounting surface 214 away from the connecting pipe 3, and the first step surface 211 is located on the side of the third step surface 212 away from the connecting pipe 3. Correspondingly, the second step surface 311 and the fourth step surface 312 are located on the side of the second mounting surface 314 close to the evaporation source 2, and the second step surface 311 is located on the side of the fourth step surface 312 close to the evaporation source 2, forming a concave stepped structure.

[0107] In some embodiments, the vapor deposition apparatus 100 further includes a plurality of nozzles 6 connected to a connecting pipe 3 for vapor deposition of a material onto a substrate. Specifically, the nozzles 6 are evenly distributed at the end of the connecting pipe 3, communicating with a first central channel 202 and a second central channel 302. The vapor deposition material is transported to the nozzles through the central channels and ejected in a gaseous or particulate state. For example, the even arrangement of multiple nozzles ensures uniform vapor deposition. The sealing structure prevents material leakage in the transmission path (such as the interface between the connecting pipe and the evaporation source), ensuring that all material is ejected through the nozzles, avoiding waste and contamination. The zero-leakage design of the nozzles in conjunction with the sealing structure stabilizes the material flow rate and ensures uniform ejection pressure, improving the pixel consistency of the OLED display panel (such as the uniformity of RGB light-emitting layer thickness). Different vapor deposition materials (such as small molecule organics and metal electrode materials) can be adapted by replacing nozzles with different orifice diameters, expanding the applicability of the equipment. The sealing structure prevents external particles from entering the connecting pipe, preventing vapor deposition defects (such as pixel dark spots) caused by nozzle blockage due to foreign objects.

[0108] Furthermore, the method for preparing the display panel 10 according to the embodiments of this application will be described below.

[0109] refer to Figure 14 The method for manufacturing the display panel 10 includes the following steps: Step S21: An isolation structure 12 is formed on one side of the substrate 11. The isolation structure 12 is provided with a plurality of isolation openings 12a, including a plurality of first isolation openings 12a1, a plurality of second isolation openings 12a2 and a plurality of third isolation openings 12a3.

[0110] Step S22: Fabricate the film layer of the first light-emitting device 13a. The film layer of the first light-emitting device 13a includes the light-emitting layer of the first light-emitting device 13a and the second electrode layer.

[0111] Step S23: Fabricate the first encapsulation layer of the first light-emitting device 13a. Since the film layer and the first encapsulation layer of the first light-emitting device 13a are both fabricated as a single layer, the film layer and the first encapsulation layer of the first light-emitting device 13a are present at the positions of the plurality of first isolation openings 12a1, the plurality of second isolation openings 12a2 and the plurality of third isolation openings 12a3.

[0112] Step S24: Etch away the film layer and first encapsulation layer of the first light-emitting device 13a at the locations of the plurality of second isolation openings 12a2 and the plurality of third isolation openings 12a3, thereby forming only the light-emitting layer 132 and the second electrode 133 of the first light-emitting device 13a, and the first encapsulation portion 14a of the first light-emitting device 13a at the locations of the plurality of first isolation openings 12a1.

[0113] Based on the above steps S22 to S24, the light-emitting layer 132 and the second electrode 133 of the second light-emitting device 13b and the first encapsulation part 14b of the second light-emitting device 13b are respectively provided at the positions of the multiple second isolation openings 12a2, and the light-emitting layer 132 and the second electrode 133 of the third light-emitting device 13c and the first encapsulation part 14c of the third light-emitting device 13c are respectively provided at the positions of the multiple third isolation openings 12a3.

[0114] In some possible embodiments, this application also provides a display device, which includes the display panel 10 described in this application. The display device may include a device with image processing capabilities, such as a mobile phone, desktop computer, laptop computer, tablet computer, in-vehicle display, wearable device, etc. Because this display device includes the display panel described in this application, the electronic device has higher reliability.

[0115] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0116] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A vapor deposition apparatus, characterized in that, The vapor deposition apparatus includes: An evaporation source and a connecting pipe are provided, wherein the connecting pipe is disposed opposite to the evaporation source, the end of the evaporation source near the connecting pipe is provided with a first stepped structure, and the end of the connecting pipe near the evaporation source is provided with a second stepped structure, wherein the shapes of the first stepped structure and the second stepped structure are matched. A sealing structure is disposed between the first stepped structure and the second stepped structure.

2. The vapor deposition apparatus as described in claim 1, characterized in that, The sealing structure includes a sealing gasket located between the first stepped structure and the second stepped structure.

3. The vapor deposition apparatus as described in claim 2, characterized in that, The sealing structure further includes a sealing protrusion disposed on the step surface of the first stepped structure and located between the first stepped structure and the sealing gasket; and / or, the sealing protrusion disposed on the step surface of the second stepped structure and located between the second stepped structure and the sealing gasket.

4. The vapor deposition apparatus as described in claim 2, characterized in that, The sealing structure includes a sealing ring that surrounds the sealing gasket.

5. The vapor deposition apparatus as described in claim 4, characterized in that, The vapor deposition apparatus also includes: A cooling structure is provided on the side of the sealing ring near the evaporation source and / or near the connecting pipe for cooling the sealing ring.

6. The vapor deposition apparatus as described in claim 5, characterized in that, The evaporation source includes a first mounting platform, which is disposed at one end of the evaporation source near the connecting pipe; the connecting pipe includes a second mounting platform, which is disposed at one end of the connecting pipe near the evaporation source; a first stepped structure is disposed on the first mounting platform, a second stepped structure is disposed on the second mounting platform, and the cooling structure is disposed within the first mounting platform and / or the second mounting platform.

7. The vapor deposition apparatus as described in claim 6, characterized in that, The evaporation source includes a first central channel that passes through the first mounting platform; the connecting pipe includes a second central channel that passes through the second mounting platform; the second central channel is connected to and communicates with the first central channel, and the sealing gasket surrounds the first central channel and the second central channel.

8. The vapor deposition apparatus as described in claim 7, characterized in that, The first stepped structure includes a first step surface and a third step surface that are not coplanar, the third step surface being located on the side of the first step surface away from the first central channel; the second stepped structure includes a second step surface and a fourth step surface that are not coplanar, the fourth step surface being located on the side of the second step surface away from the second central channel, the second step surface being opposite to the first step surface, and the fourth step surface being opposite to the second step surface; the sealing gasket includes a first gasket and a second gasket, the first gasket being located between the first step surface and the second step surface, and the second gasket being located between the second step surface and the fourth step surface.

9. The vapor deposition apparatus as described in claim 8, characterized in that, The first stepped structure includes a fifth step surface, which is located on the side of the third step surface away from the first central channel and is not coplanar with the third step surface or the first step surface; the second stepped structure includes a sixth step surface, which is located on the side of the fourth step surface away from the second central channel and is not coplanar with the fourth step surface or the second step surface; the sixth step surface and the fifth step surface are disposed opposite to each other; the sealing gasket includes a third gasket, which is located between the fifth step surface and the sixth step surface.

10. The vapor deposition apparatus as described in claim 8, characterized in that, The first stepped structure includes a first mounting surface, which is not coplanar with the third step surface and the first step surface; the second stepped structure includes a second mounting surface, which is not coplanar with the fourth step surface and the second step surface; the sealing ring is located between the first mounting surface and the second mounting surface.

11. The vapor deposition apparatus as described in claim 10, characterized in that, The first mounting surface and / or the second mounting surface are provided with mounting grooves, and the sealing ring is at least partially located within the mounting grooves.

12. The vapor deposition apparatus as described in claim 10, characterized in that, The first stepped surface and the third stepped surface are located on the side of the first mounting surface closer to the connecting pipe, and the first stepped surface is located on the side of the third stepped surface closer to the connecting pipe.

13. The vapor deposition apparatus as described in claim 2, characterized in that, The sealing gasket includes graphite foil.

14. The vapor deposition apparatus as described in claim 1, characterized in that, The vapor deposition apparatus also includes: Multiple nozzles, connected to the connecting pipe, are used to deposit vapor deposition material onto the substrate.

15. A vapor deposition method, characterized in that, The vapor deposition method includes: An evaporation source is connected to a connecting pipe that is positioned opposite to each other. The evaporation source has a first stepped structure at one end near the connecting pipe, and the connecting pipe has a second stepped structure at one end near the evaporation source. The first stepped structure and the second stepped structure are shaped to match each other, and a sealing structure is provided between the first stepped structure and the second stepped structure. The substrate is aligned with the evaporation source. An isolation structure is provided on one side of the substrate. The isolation structure encloses and forms an isolation opening. The evaporation source deposits luminescent material into the isolation opening to form a luminescent layer.

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