Communication-compatible copper-indium-gallium-selenium power generation glass and preparation method thereof

Abstract

The invention discloses communication-compatible copper-indium-gallium-selenium power generation glass and a preparation method thereof, and belongs to the technical field of glass. The power generation glass comprises a glass substrate, the surface of the glass substrate is subjected to acid etching to form a groove structure, and a back electrode Mo layer, a CuIn1-xGaxSe2 absorption layer, an In2S3 buffer layer, an n-type intrinsic ZnO layer and a ZnO: Al transparent conductive layer are sequentially arranged on the groove structure; one surface of the glass cover plate is subjected to acid etching to form a prismatic table-shaped structure, a TiO2 or TiO2 / SiO2 layer and a SiO2 layer are sequentially arranged on the prismatic table-shaped structure, and the SiO2 layer and the ZnO: Al transparent conductive layer are communicated with a structural unit at the SiO2 layer through a PVB (Polyvinyl Butyral) gluing sheet. Through the film system design of the copper-indium-gallium-selenium power generation glass, a cover plate glass structure with surface light self-trapping and self-cleaning functions and a back surface high-reflection structure are provided, and the copper-indium-gallium-selenium power generation glass has a certain communication transmission function, so that popularization and application of the copper-indium-gallium-selenium power generation glass in the field of building photovoltaic integration are facilitated.

Description

Technical Field

[0001] This invention belongs to the field of glass technology, specifically relating to a communication-compatible copper indium gallium selenide (CIGS) power-generating glass and its preparation method. Background Technology

[0002] Copper indium gallium selenide (CIGS) photovoltaic glass, due to its excellent low-light performance, low pollution during production, low temperature coefficient, and low attenuation rate, can replace traditional building exterior materials, curtain wall panels, and roofing system materials in applications such as glass curtain walls, skylights, and industrial plants. However, the shielding effect of photovoltaic glass on communication signals limits its use in applications such as glass curtain walls and skylights. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide a communication-compatible copper indium gallium selenide (CIGS) power-generating glass and its preparation method.

[0004] The objective of this invention can be achieved through the following technical solutions: A communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass, comprising: A glass substrate has a groove structure formed on its surface through chemical etching; a back electrode Mo layer and a CuIn layer are sequentially arranged on the groove structure. 1-x Ga x Se2 absorption layer, In2S3 buffer layer, n-type intrinsic ZnO layer, ZnO:Al transparent conductive layer; The glass cover plate (high-transparency ultra-white glass) has one side chemically etched to form a frustum-shaped structure, with porous aluminum phosphate filling the gaps in the frustum-shaped structure to form a porous aluminum phosphate structure layer; the other side of the high-transparency ultra-white glass cover plate has a TiO2 or TiO2 / SiO2 layer 10 and a SiO2 layer sequentially disposed thereon, with a PVB adhesive layer disposed on the surface of the SiO2 layer, and the PVB adhesive layer is laminated with a ZnO:Al transparent conductive layer. It should be further explained that communication structure units are set at the edge of the SiO2 layer or in a specific area, and the wiring points of the communication structure units are reserved on the PVB adhesive layer.

[0005] Furthermore, the ratio of the groove diameter to the depth of the groove structure is not less than 5:1.

[0006] Furthermore, the CuIn 1-x Ga x The thickness of the Se2 absorber layer is 1.2-1.8 μm; the elemental ratio of In to Ga can be adjusted according to the band gap width and cell efficiency.

[0007] Furthermore, the In2S3 buffer layer has a thickness of 20-100 nm.

[0008] Furthermore, the thickness of the n-type intrinsic ZnO layer is 50-150 nm.

[0009] Furthermore, the thickness of the ZnO:Al transparent conductive layer is 400-800 nm.

[0010] Furthermore, the roughness Ra of the frustum-shaped structure is 0.5-3 μm, and Rz is 2-10 μm.

[0011] Furthermore, the refractive index of the porous aluminum phosphate structure layer is less than 1.5.

[0012] Furthermore, the thickness of the TiO2 layer or TiO2 / SiO2 layer is 100-220 nm.

[0013] Furthermore, the SiO2 layer has a film thickness of 80-120 nm.

[0014] Furthermore, the edge portion or specific area of ​​the SiO2 layer may be placed at the edge encapsulation position or placed in a specific area according to architectural aesthetic design.

[0015] Furthermore, the communication structure unit includes a communication signal receiver and a transmission lead.

[0016] Another object of the present invention is to provide a method for preparing the above-mentioned copper indium gallium selenide (CIGS) photovoltaic glass, comprising the following steps: S1. Prepare glass etching solution a and etching solution b; immerse one side of glass substrate 1 in etching solution a for etching treatment; S2. A back electrode Mo layer and CuIn layer are sequentially deposited on the acid-etched glass substrate using magnetron sputtering. 1-x Ga x Se2 absorption layer, In2S3 buffer layer, n-type intrinsic ZnO layer, ZnO:Al transparent conductive layer; S3. After etching the glass cover plate with acid etching solution b to form a frustum-shaped structure, a porous aluminum phosphate structure layer is prepared on the surface of the frustum-shaped structure by sol-gel method. TiO2 or TiO2 / SiO2 coating solution is coated on the other side of the glass cover plate by roller coating and heat treatment is performed to form a TiO2 or TiO2 / SiO2 layer. Subsequently, SiO2 coating solution is coated by roller coating and heat treatment is performed to form a SiO2 layer. S4. Use laser etching to clean the edges of the coated glass substrate and glass cover plate or perform customized film removal according to the design pattern; attach the communication structure unit to the cleaned or removed area of ​​the glass cover plate; S5. Apply PVB adhesive to the surface of the SiO2 layer, seal the glass substrate and glass cover plate with adhesive, and form a PVB adhesive layer between the SiO2 layer and the ZnO:Al transparent conductive layer to complete the component preparation.

[0017] Furthermore, the acid etching solution a contains 40% hydrofluoric acid, 98% sulfuric acid, 36% hydrochloric acid, ammonium bifluoride, and calcium fluoride; the mass ratio of the above substances to water is (60-80):(8-12):(13-16):(1.5-2.5):(2.5-4):200.

[0018] Furthermore, the acid etching solution b contains 40% hydrofluoric acid, 98% sulfuric acid, ammonium bifluoride, ammonium sulfate, magnesium chloride, aluminum nitrate, sodium chloride, potassium chloride, and ethylene glycol; the mass ratio of the above substances to water is (12-17):(1.5-3):(4-6):(1-1.5):(1-1.5):(1-1.5):(1.5-3):(3-5):(1-1.5):10.

[0019] Furthermore, the glass substrate is vertically immersed in acid etching solution a for 5-10 minutes. To ensure uniformity, the glass must not touch the bottom of the container. After removal, it is rinsed with deionized water and the encapsulation material is removed.

[0020] Furthermore, the glass cover is vertically immersed in acid etching solution b for 10-30 minutes. To ensure uniformity, the glass must not touch the bottom of the container. After removal, it is rinsed with deionized water and the encapsulating material is removed.

[0021] Furthermore, the magnetron sputtering parameters for forming the Mo layer on the back electrode are as follows: the vacuum level of the magnetron sputtering cavity is evacuated to 5*10. -6 Below Torr, high-purity argon gas is introduced at a flow rate of 200 sccm to maintain the chamber pressure at 2.0-3.0*10. -3 Torr; sputtering deposition is performed using a DC power supply with a power of 1200-1600W, and the substrate is water-cooled to maintain the temperature below 80 ℃; the film thickness is controlled by the deposition time.

[0022] Furthermore, the CuIn formed 1-x Ga x The magnetron sputtering parameters for the Se2 absorber layer are as follows: the vacuum level of the magnetron sputtering cavity is evacuated to 5*10. -6 Below Torr, high-purity argon gas is introduced at a flow rate of 200 sccm to maintain the chamber pressure at 2.0-3.0*10. -3 Torr sputtering deposition was performed using a DC power supply of 500-600W at a substrate temperature of 100-150℃; film thickness was controlled by deposition time; CuIn 1-x Ga xIf the Se content in the Se2 target exceeds the stoichiometric ratio by 20%, a Se powder storage box can be set at the argon gas inlet, and Se vapor can be generated by laser ablation and then carried into the magnetron sputtering cavity by argon gas; the ratio of In to Ga is adjusted according to the band gap width and cell efficiency.

[0023] Furthermore, the magnetron sputtering parameters for forming the In2S3 buffer layer are as follows: the vacuum level of the magnetron sputtering cavity is evacuated to 5*10. -6 Below Torr, high-purity argon gas is introduced at a flow rate of 200 sccm to maintain the chamber pressure at 2.0-3.0*10. -3 Torr; sputtering deposition is performed using a DC power supply with a power of 100-200W and a substrate temperature of 100-150℃; the film thickness is controlled by the deposition time.

[0024] Furthermore, the magnetron sputtering parameters for forming the n-type intrinsic ZnO layer are as follows: the vacuum level of the magnetron sputtering cavity is evacuated to 5*10⁻⁶. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 2.0-3.0*10. -3 Torr uses an RF power supply for sputtering deposition, with a power of 1000-1500W and a substrate temperature of 100-150℃; the film thickness is controlled by the deposition time.

[0025] Furthermore, the magnetron sputtering parameters for forming the ZnO:Al transparent conductive layer are as follows: the vacuum level of the magnetron sputtering cavity is evacuated to 5*10. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 2.0-3.0*10. -3 Torr. The sputtering power is 6000-8000W, the voltage is 557-619V, and the substrate temperature is 100-150℃; the target material is high-purity AZO target material with a purity of 99.99%, of which ZnO content is 97.2-98.3% and Al2O3 content is 1.7-2.8%; the film thickness is controlled by the coating time.

[0026] Furthermore, the communication structure unit can take several forms, such as setting an antenna receiver on the glass cover and a signal transmitter on the glass substrate, with the antenna receiver and signal transmitter connected through signal transmission, decoder, etc.; or removing the film layer in a certain area and setting the antenna receiver and signal transmitter on the glass cover; or combining with architectural aesthetic design, removing the film layer set on the glass cover according to the design pattern to achieve communication signal transmission.

[0027] The beneficial effects of this invention are: This invention provides a cover glass structure with self-trapping and self-cleaning surface functions, along with a high-reflectivity back surface, through the film system design of copper indium gallium selenide (CIGS) photovoltaic glass. The CIGS absorber layer preparation technology provided by this invention simplifies the cumbersome selenization process following sputtering in existing technologies. The communication structure design provided by this invention enables CIGS photovoltaic glass to possess certain communication transmission capabilities, facilitating its promotion and application in the field of building-integrated photovoltaics (BIPV). Attached Figure Description

[0028] The invention will now be further described with reference to the accompanying drawings.

[0029] Figure 1 This is a schematic diagram of the structure of the power-generating glass of the present invention.

[0030] Figure 2 This is a surface morphology diagram of the glass substrate after acid etching treatment according to the present invention.

[0031] Figure 3 This is a surface morphology diagram of the glass cover plate after acid etching treatment according to the present invention.

[0032] In the figure: 1. Glass substrate; 2. Groove structure; 3. Back electrode Mo layer; 4. CuIn 1-x Ga x 5. Se2 absorption layer; 6. In2S3 buffer layer; 7. n-type intrinsic ZnO layer; 8. ZnO:Al transparent conductive layer; 9. PVB adhesive layer; 10. SiO2 layer; 11. TiO2 or TiO2 / SiO2 layer; 12. Glass cover plate; 13. Frustum-shaped structure; 14. Porous aluminum phosphate structure layer; 15. Communication structure unit. Detailed Implementation

[0033] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0034] Example 1 The preparation of a communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass includes the following steps: S1. Prepare glass etching solution a, with a concentration of 40% hydrofluoric acid: 98% sulfuric acid: 36% hydrochloric acid: ammonium bifluoride: calcium fluoride: deionized water = 70:10:15:2:3:200. Prepare etching solution b with a concentration of 40% hydrofluoric acid: 98% sulfuric acid: ammonium bifluoride: ammonium sulfate: magnesium chloride: aluminum nitrate: sodium chloride: potassium chloride: ethylene glycol: deionized water = 14:2:5:1:1:1:2:4:1:10. Clean the glass substrate 1 with sodium hydroxide in ethanol / water solution and dilute hydrochloric acid to remove surface contaminants, then rinse thoroughly with deionized water and dry. Seal the dried glass substrate 1 on one side, immerse it vertically in etching solution a for 10 minutes, remove it, rinse thoroughly with plenty of deionized water, and remove the sealing material. The surface morphology of the acid-etched glass substrate 1 is as follows. Figure 2 The glass cover plate 11 was cleaned with sodium hydroxide in ethanol / aqueous solution and dilute hydrochloric acid to remove surface contaminants, then rinsed with deionized water and dried. It was then single-sided sealed and vertically immersed in acid etching solution b for 20 minutes. After removal, it was rinsed with plenty of deionized water to remove the sealing material. The surface morphology of the acid-etched glass cover plate 11 is as follows. Figure 3 The surface roughness Ra = 1.084 μm and Rz = 4.380 μm.

[0035] S2. Place the acid-etched glass substrate 1 on the magnetron sputtering substrate holder, and perform magnetron sputtering to deposit a Mo film on the etched surface. The vacuum level of the magnetron sputtering chamber is evacuated to 5*10⁻⁶. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm is introduced to maintain the chamber pressure at 2.4*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 1500W, with the substrate water-cooled to maintain the temperature below 80°C. The back electrode Mo layer 3 had a thickness of 234.9 nm and a sheet resistance of 2.69 Ω / □. CuIn was deposited on the back electrode Mo layer 3. 1-x Ga x Se2 absorber layer 4. The vacuum level of the magnetron sputtering cavity was evacuated to 5*10. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm is introduced to maintain the chamber pressure at 2.4*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 500W at a substrate temperature of 120℃. An In2S3 buffer layer of 5 was used, and the vacuum level in the magnetron sputtering chamber was evacuated to 5*10. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm is introduced to maintain the chamber pressure at 2.5*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 150W at a substrate temperature of 100℃. Six n-type intrinsic ZnO layers were deposited, and the vacuum level in the magnetron sputtering chamber was evacuated to 5*10⁻⁶. -6Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 3.0*10. -3 Torr. Sputtering deposition was performed using an RF power supply with a power of 1200W and a substrate temperature of 100℃. The ZnO:Al transparent conductive layer 7 is characterized by a magnetron sputtering cavity vacuum level of 5*10⁻⁶. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 3.0*10. -3 Torr. Sputtering power was 6000W, voltage was 570V. Substrate temperature was 100℃. High-purity AZO target material was used, with a purity of 99.99%, of which ZnO content was 98.3% and Al2O3 content was 1.7%. The sheet resistance of the AZO sample was 11.3Ω / □.

[0036] S3. A porous aluminum phosphate layer 13 is prepared on one side of the frustum-shaped structure 12 of the acid-etched glass cover plate 11 using a sol-gel method. A TiO2 / SiO2 coating solution is then applied to the other side of the glass cover plate 11 using a roll coating method, followed by heat treatment. Subsequently, a SiO2 coating solution is applied using a roll coating method, followed by heat treatment.

[0037] S4. Laser etching is used to clean the edges of the coated glass substrate 1 and glass cover plate 11. The antenna receiver of the communication structure unit 14 is attached to the cleaned edge of the glass cover plate 11, and the signal transmitter is attached to the glass substrate 1. The antenna receiver and the signal transmitter are connected through signal transmission, decoder, etc.

[0038] S5. The glass substrate 1 and glass cover plate 11 are sealed and assembled using PVB adhesive to complete the module fabrication. The resulting power-generating glass product structure is as follows: Figure 1 As shown.

[0039] Example 2 The preparation of a communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass includes the following steps: S1. Prepare glass etching solution a, with a concentration of 40% hydrofluoric acid: 98% sulfuric acid: 36% hydrochloric acid: ammonium bifluoride: calcium fluoride: deionized water = 60:9:14:2:4:200. Prepare etching solution b with a concentration of 40% hydrofluoric acid: 98% sulfuric acid: ammonium bifluoride: ammonium sulfate: magnesium chloride: aluminum nitrate: sodium chloride: potassium chloride: ethylene glycol: deionized water = 15:2:4:1.5:1.5:1.5:2:3:1:10. Clean the glass substrate 1 with an ethanol / water solution of sodium hydroxide and dilute hydrochloric acid to remove surface contaminants, then rinse thoroughly with deionized water and dry. Seal one side of the dried glass substrate 1 and immerse it vertically in etching solution a for 10 minutes. Remove it and rinse thoroughly with plenty of deionized water to remove the sealing material, obtaining the acid-etched glass substrate 1. The glass cover plate 11 is cleaned with sodium hydroxide in ethanol / water solution and dilute hydrochloric acid to remove surface contaminants, then rinsed with deionized water and dried. The dried glass cover plate 11 is then sealed on one side and vertically immersed in acid etching solution b for 30 minutes. After removal, it is rinsed with plenty of deionized water to remove the sealing material, thus obtaining the acid-etched glass substrate 11.

[0040] S2. Place the acid-etched glass substrate 1 on the magnetron sputtering substrate holder, and perform magnetron sputtering to deposit a Mo film on the etched surface. The vacuum level of the magnetron sputtering chamber is evacuated to 5*10⁻⁶. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm is introduced to maintain the chamber pressure at 2.6*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 1200W, with the substrate water-cooled to maintain the temperature below 80°C. The back electrode Mo layer 3 had a thickness of 182.7 nm and a sheet resistance of 3.41 Ω / □. CuIn was deposited on the back electrode Mo layer 3. 1-x Ga x Se2 absorber layer 4. The vacuum level of the magnetron sputtering cavity was evacuated to 5*10. -6 Below Torr, high-purity argon gas is introduced at a flow rate of 200 sccm to maintain the chamber pressure at 2.2*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 600W at a substrate temperature of 150℃. An In2S3 buffer layer of 5 was used, and the vacuum level in the magnetron sputtering chamber was evacuated to 5*10. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm is introduced to maintain the chamber pressure at 2.2*10. -3 Torr. Sputtering deposition was performed using a DC power supply of 200W at a substrate temperature of 120℃. Six n-type intrinsic ZnO layers were deposited, and the vacuum level in the magnetron sputtering chamber was evacuated to 5*10⁻⁶. -6Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 3.0*10. -3 Torr. Sputtering deposition was performed using an RF power supply at 1500W and a substrate temperature of 130℃. A ZnO:Al transparent conductive layer 7 was used, and the vacuum level in the magnetron sputtering chamber was evacuated to 5*10⁻⁶. -6 Below Torr, high-purity argon gas at a flow rate of 200 sccm and oxygen gas at a flow rate of 2 sccm are introduced to maintain the chamber pressure at 3.0*10. -3 Torr. Sputtering power was 7000W, voltage was 570V. Substrate temperature was 100℃. High-purity AZO target material was used, with a purity of 99.99%, of which ZnO content was 98.3% and Al2O3 content was 1.7%. The sheet resistance of the AZO sample was 10.5Ω / □.

[0041] S3. After acid etching of the glass cover plate 11, a porous aluminum phosphate layer 13 is prepared on one side of the frustum-shaped structure 12 using the sol-gel method. A TiO2 / SiO2 coating solution is then applied to the other side of the glass cover plate 11 using a roll coating method, followed by heat treatment. Subsequently, a SiO2 coating solution is applied using a roll coating method, followed by heat treatment.

[0042] S4. Laser etching is used to clean the edges of the coated glass substrate 1 and glass cover plate 11, and a 5*5cm area is cleaned out at one corner. An antenna receiver and a signal transmitter are installed on the glass cover plate 11, and the antenna receiver and signal transmitter are not covered during PVB encapsulation.

[0043] S5. Use PVB adhesive to seal and assemble the glass substrate 1 and the glass cover plate 11 to complete the component preparation.

[0044] The above detailed embodiments provide a specific description of the analytical methods involved in this invention. It should be noted that the above description is only intended to help those skilled in the art better understand the methods and ideas of this invention, and is not intended to limit the scope of the invention. Without departing from the principles of this invention, those skilled in the art can make appropriate adjustments or modifications to this invention, and such adjustments and modifications should also fall within the protection scope of this invention.

Claims

1. A communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass, characterized in that, include: A glass substrate (1) has a groove structure (2) formed on its surface by chemical etching; a back electrode Mo layer (3) and CuIn layer are sequentially disposed on the groove structure (2). 1-x Ga x Se2 absorption layer (4), In2S3 buffer layer (5), n-type intrinsic ZnO layer (6), ZnO:Al transparent conductive layer (7); A glass cover plate (11) is formed by chemical etching to create a frustum-shaped structure (12). The gaps in the frustum-shaped structure (12) are filled with porous aluminum phosphate to form a porous aluminum phosphate structure layer (13). On the other side of the glass cover plate (11), a TiO2 or TiO2 / SiO2 layer (10) and a SiO2 layer (9) are sequentially disposed. A PVB adhesive layer (8) is disposed on the surface of the SiO2 layer (9). The PVB adhesive layer (8) is laminated with a ZnO:Al transparent conductive layer (7). A communication structure unit (14) is provided at the edge of the SiO2 layer (9) or in a specific area, and a wiring point for the communication structure unit (14) is reserved on the PVB adhesive layer (8).

2. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The ratio of the groove diameter to the depth of the groove structure (2) is not less than 5:

1.

3. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The CuIn 1-x Ga x The thickness of the Se2 absorption layer (4) is 1.2-1.8 μm; The In2S3 buffer layer (5) has a thickness of 20-100 nm; The thickness of the n-type intrinsic ZnO layer (6) is 50-150 nm; The thickness of the ZnO:Al transparent conductive layer (7) is 400-800 nm.

4. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The roughness Ra of the frustum-shaped structure (12) is 0.5-3μm, and Rz is 2-10μm.

5. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The refractive index of the porous aluminum phosphate structure layer (13) is less than 1.

5.

6. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The thickness of the TiO2 layer or TiO2 / SiO2 layer (10) is 100-220 nm; The SiO2 layer (9) has a film thickness of 80-120 nm.

7. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The edge encapsulant is placed at the edge portion or specific area of ​​the SiO2 layer (9) or in a specific area according to architectural aesthetic design.

8. The copper indium gallium selenide (CIGS) photovoltaic glass compatible with communication as described in claim 1, characterized in that, The communication structure unit (14) includes a communication signal receiver and a transmission lead.

9. A method for preparing a communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass according to any one of claims 1-8, characterized in that, Includes the following steps: S1. Prepare glass etching solution a and etching solution b; immerse one side of the glass substrate (1) in etching solution a for etching treatment; S2. A back electrode Mo layer (3) and CuIn layer (4) are sequentially deposited on the acid-etched glass substrate (1) by magnetron sputtering. 1-x Ga x Se2 absorption layer (4), In2S3 buffer layer (5), n-type intrinsic ZnO layer (6), ZnO:Al transparent conductive layer (7); S3. After etching the glass cover plate (11) with acid etching solution b to form a frustum-shaped structure (12), a porous aluminum phosphate structure layer (13) is prepared on the surface of the frustum-shaped structure (12) by sol-gel method. TiO2 or TiO2 / SiO2 coating solution is coated on the other side of the glass cover plate (11) by roller coating and heat treatment is performed to form a TiO2 or TiO2 / SiO2 layer (10). Subsequently, SiO2 coating solution is coated by roller coating and heat treatment is performed to form a SiO2 layer (9). S4. Use laser etching to clean the edges of the coated glass substrate (1) and glass cover plate (11) or perform customized film removal according to the design pattern; attach the communication structure unit (14) to the cleaned edge or film removal area of ​​the glass cover plate (11); S5. Apply PVB adhesive to the surface of the SiO2 layer (9), seal the glass substrate (1) and the glass cover plate (11) with adhesive, and form a PVB adhesive layer (8) between the SiO2 layer (9) and the ZnO:Al transparent conductive layer (7) to complete the component preparation.

10. The method for preparing a communication-compatible copper indium gallium selenide (CIGS) photovoltaic glass according to claim 9, characterized in that, The etching solution a contains 40% hydrofluoric acid, 98% sulfuric acid, 36% hydrochloric acid, ammonium bifluoride and calcium fluoride; the mass ratio of the above substances to water is (60-80):(8-12):(13-16):(1.5-2.5):(2.5-4):

200. The etching solution b contains 40% hydrofluoric acid, 98% sulfuric acid, ammonium bifluoride, ammonium sulfate, magnesium chloride, aluminum nitrate, sodium chloride, potassium chloride, and ethylene glycol; the mass ratio of the above substances to water is (12-17):(1.5-3):(4-6):(1-1.5):(1-1.5):(1-1.5):(1.5-3):(3-5):(1-1.5):10.

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