Device and method for etching flaky wafer by laser to form Taiko structure

Abstract

The invention relates to a device and a method for forming a Taiko-shaped wafer, in which a wafer is placed on a console, the center axis is focused along a femtosecond laser at one end of the long-column-shaped array laser, the femtosecond laser extending to the other end of the long-column-shaped array laser is focused to a groove radius R1, and at least one control module configured to control the wafer to form a Taiko-shaped wafer on the console, the Taiko-shaped wafer on the console, the Taiko-shaped wafer on the center axis, and the Taiko-shaped wafer on the console, the Taiko-shaped wafer on the center axis, the Taiko-shaped wafer on the center axis, and the Taiko-shaped wafer on the console. The wafer or the long column type array laser is controlled to rotate, in the circle-by-circle rotation state, the long column type array laser melts and erodes the wafer, the center of the thinned wafer is a groove bottom face, the groove bottom face forms a horizontal disc-shaped concave tangent plane, the periphery of the center of the thinned wafer is not melted and eroded, and the center of the thinned wafer is not melted and eroded. And forming a frame of the wafer, and forming the wafer of a taiko structure by the frame of the wafer and the groove bottom surface of the groove together.

Description

Technical Field

[0001] This invention relates to an apparatus and method for forming a taiko-shaped wafer, and more particularly to an apparatus and method for forming a taiko structure by laser etching a thin wafer. Background Technology

[0002] Existing technologies, such as Figure 1 As shown, a grinding machine consisting of at least one grinding block is used to grind the wafer 1 to be thinned. The grinding block grinds a groove 11 with a groove bottom surface 13 in the center of the wafer, and a ring-shaped frame 12 is formed around the circumference. In the prior art, the grinding block grinds the wafer 1 into a taiko-shaped wafer with a wafer radius R0 and a groove radius R1. Summary of the Invention

[0003] This invention provides an apparatus for laser etching a thin wafer to form a drum structure, comprising: a cylindrical laser array with at least one femtosecond laser; an operating stage disposed below the cylindrical laser array; and a wafer placed on the operating stage, wherein the wafer surface to be thinned has an outer circumference of a wafer radius R0 and an inner circumference of a groove radius R1, wherein the femtosecond laser at one end of the cylindrical laser array is focused along the central axis, and extends to the femtosecond laser at the other end of the cylindrical laser array. The laser is focused onto the groove radius R1; and at least one control module controls the rotation of the wafer or the rotation of the cylindrical array laser. In the rotating state, the cylindrical array laser ablates the wafer, forming a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave section, wherein the area around the center of the thinned wafer is not ablated, forming the wafer frame. The wafer frame and the groove bottom surface together form the taiko structure of the wafer.

[0004] The present invention provides an apparatus for laser etching thin wafers to form a drum structure, wherein the operating table is a rotary freezer.

[0005] The present invention provides an apparatus for laser etching thin wafers to form a drum structure, wherein the femtosecond laser uses green light.

[0006] The present invention provides an apparatus for laser etching thin wafers to form a drum structure, wherein the scanning spot of the femtosecond laser is 2 μm.

[0007] This invention provides a method for laser etching a thin wafer to form a drum structure, comprising the following steps: Step 1, holding the wafer to be thinned to form a drum structure on an operating table; Step 2, using the operating table, synchronously rotating the wafer to be thinned to form a drum structure along its central axis; Step 3, using at least one femtosecond laser to form a long columnar array laser, the long columnar array laser having a linear arrangement structure, the wafer surface to be thinned having an outer circumference of the wafer radius R0 and an inner circumference of the wafer radius R1, wherein the femtosecond laser at one end of the long columnar array laser is focused on the central axis, and the femtosecond laser extending to the other end of the long columnar array laser... Step 4: Using at least one femtosecond laser pulse, a linear array of columnar light spots is formed to melt-etch the wafer surface of the wafer. Step 5: Using a long columnar array laser, the wafer to be thinned to form a taiko structure is irradiated while rotating. At the same time, a control module rotates the wafer at least once. During the rotation, the wafer is etched to form a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave section. The area around the center of the thinned wafer is not etched, forming the wafer frame. The wafer frame and the groove bottom surface together form the taiko structure of the wafer.

[0008] This invention provides a method for laser etching a thin wafer to form a drum structure, comprising the following steps: Step 1, holding the wafer to be thinned to form a drum structure on an operating table; Step 2, using at least one femtosecond laser to form a long columnar array laser, the long columnar array laser having a linear arrangement structure, the wafer surface to be thinned having an outer circumference of the wafer radius R0 and an inner circumference of the wafer radius R1, wherein the femtosecond laser at one end of the long columnar array laser is focused on the central axis, and the femtosecond laser extending to the other end of the long columnar array laser is focused on the groove radius R1; Step 3, using the at least one femtosecond laser... The laser pulses form a linear array of columnar light spots to melt and etch the wafer surface; Step 4: One end of the long columnar array laser is positioned above the central axis of the wafer, and the other end of the long columnar array laser is rotated to scan; and Step 5: The long columnar array laser is directed at the rotating wafer to be thinned to form a taiko structure, while a control module rotates the long columnar array laser at least one revolution. In the revolution-by-revolution state, the wafer is etched, forming a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave cross-section, wherein the area around the center of the thinned wafer is not etched, forming the wafer frame. The wafer frame and the groove bottom surface together form the taiko structure wafer.

[0009] This invention discloses a method for forming a drum structure by laser etching of a thin wafer, wherein the operating table is equipped with a rotary cryostat. The femtosecond laser used is green light. The scanning spot size of the femtosecond laser is 2 μm.

[0010] This invention discloses an apparatus and method for forming a drum-shaped structure from a thin wafer using laser etching. The femtosecond laser has a scanning spot size of 2 μm, enabling rapid etching of the wafer surface and achieving the specific objective of forming a drum-shaped wafer after thinning. Furthermore, a rotary chiller reduces heat dissipation during the rapid etching of the wafer by the femtosecond laser, thereby relatively reducing the brittleness of the drum-shaped wafer.

[0011] The above description and illustration are merely illustrative of preferred embodiments of the present invention. Those skilled in the art can make other modifications based on the following defined claims and the above description, but such modifications should still be within the spirit of the invention and the scope of the invention. Attached Figure Description

[0012] Figure 1 The image shows a prior art grinder grinding wafers to form a drum-shaped wafer.

[0013] Figure 2 A schematic diagram showing a cross-section of the wafer forming the drum structure according to the present invention is displayed.

[0014] Figure 3 A three-dimensional schematic diagram of the wafer forming the drum structure according to the present invention is shown.

[0015] Figure 4 A schematic diagram of the method for forming a drum structure by laser etching of a thin wafer according to the present invention is shown.

[0016] Figure 5 This diagram illustrates another schematic of the method for forming a drum structure by laser etching of a thin wafer according to the present invention.

[0017] Symbol explanation:

[0018] 1 wafer

[0019] 2 control panels

[0020] 3 Long column array laser

[0021] 31 femtosecond laser

[0022] 32 light spots

[0023] 4 control modules

[0024] 5 Grinding Machine

[0025] 51 grinding blocks

[0026] 11 grooves

[0027] 12-border

[0028] 13 slot bottom surface

[0029] 14 wafer surface

[0030] D1 Depth

[0031] W1 width

[0032] R0 wafer radius

[0033] R1 groove radius

[0034] C is the central axis. Detailed Implementation

[0035] like Figure 2 as well as Figure 3 As shown, an apparatus for laser etching a thin wafer 1 to form a drum structure includes: a cylindrical array laser 3 with at least one femtosecond laser 31; an operating stage 2 disposed below the cylindrical array laser 3; and a wafer 1 placed on the operating stage 2. The wafer surface 14 of the wafer 1 to be thinned has an outer circumference of a wafer radius R0 and an inner circumference of a groove radius R1. The femtosecond laser 31 at one end of the cylindrical array laser 3 is focused along the central axis C, and extends to the other end of the cylindrical array laser 3. The laser is focused onto the groove radius R1; and at least one control module 4 controls the rotation of the wafer 1 or the rotation of the cylindrical array laser 3. During rotation, the cylindrical array laser 3 ablates the wafer 1, forming a groove bottom surface 13 at the center of the thinned wafer 1. The groove bottom surface 13 forms a horizontal disk-shaped recessed section, wherein the area surrounding the center of the thinned wafer 1 is not ablated, forming the wafer 1's border 12. The wafer 1's border 12 and the groove bottom surface 13 of the groove 11 together form the taiko structure of the wafer 1. The border 12 has a depth D1 and a width W1.

[0036] like Figure 2 as well as Figure 3 As shown, an apparatus for laser etching thin wafer 1 to form a drum structure is provided, wherein the operating table 2 is a rotary freezer.

[0037] like Figure 2 as well as Figure 3 As shown, an apparatus for laser etching a thin wafer 1 to form a drum structure is provided, wherein the femtosecond laser 31 uses green light.

[0038] like Figure 2 as well as Figure 3 As shown, an apparatus for laser etching a thin wafer 1 to form a drum structure is provided, wherein the scanning spot 33 of the femtosecond laser 31 is 2 μm.

[0039] like Figure 4As shown, a method for forming a drum structure by laser etching a thin wafer 1 includes the following steps: Step 1, using the wafer 1 to be thinned to form a drum structure, holding the wafer 1 on an operating stage 2; Step 2, using the operating stage 2, synchronously rotating the wafer 1 to be thinned to form a drum structure along the central axis C; Step 3, using at least one femtosecond laser 31 to form a long columnar array laser 3, the long columnar array laser 3 having a linear arrangement structure, the wafer surface 14 of the wafer 1 to be thinned having an outer circumference of the wafer 1 equal to a wafer radius R0, and an inner circumference of the wafer 1 equal to a groove radius R1, wherein the femtosecond laser 31 at one end of the long columnar array laser 3 is focused on the central axis C, and the femtosecond laser 31 at the other end of the long columnar array laser 3... Step 4: Using at least one femtosecond laser 31, a pulse is used to form a linear array of columnar light spots 33 to melt-etch the wafer surface 14 of the wafer 1; and Step 5: Using the long columnar array laser 3, the laser is directed at the wafer 1 to be thinned to form a taiko structure while rotating, and a control module 4 rotates the wafer 1 at least once. In the rotating state, the wafer 1 is etched to form a groove bottom surface 13 in the center of the thinned wafer 1. The groove bottom surface 13 forms a horizontal disk-shaped concave section, wherein the area around the center of the thinned wafer 1 is not etched to form the frame 12 of the wafer 1. The frame 12 of the wafer 1 and the groove bottom surface 13 of the groove 11 together form the taiko structure of the wafer 1.

[0040] like Figure 5As shown, a method for forming a drum structure by laser etching a thin wafer 1 includes the following steps: Step 1, holding the wafer 1 to be thinned to form a drum structure on an operating stage 2; Step 2, using at least one femtosecond laser 31 to form a long columnar array laser 3, the long columnar array laser 3 having a linear arrangement structure, the wafer surface 14 of the wafer 1 to be thinned having an outer circumference of the wafer 1 equal to a wafer radius R0, and an inner circumference of the wafer 1 equal to a groove radius R1, wherein the femtosecond laser 31 at one end of the long columnar array laser 3 is focused on the central axis C, and the femtosecond laser 31 extending to the other end of the long columnar array laser 3... Step 3: Using at least one femtosecond laser 31, a pulse is used to form a linear array of columnar light spots 33 to perform melt etching on the wafer surface 14 of the wafer 1; Step 4: One end of the long columnar array laser 3 is positioned above the central axis C of the wafer 1, and the other end of the long columnar array laser 3 is rotated to perform scanning; and Step 5: The long columnar array laser 3 is directed towards the rotating wafer to be thinned. The wafer 1, which forms a taiko structure, is simultaneously rotated at least once by a control module 4 using a long columnar array laser 3. During this rotation, the wafer 1 is etched, resulting in a thinned wafer 1 with a groove bottom surface 13 at its center. The groove bottom surface 13 forms a horizontal disk-shaped recessed section, while the area surrounding the thinned wafer 1's center remains unetched, forming the wafer 1's frame 12. The wafer 1's frame 12 and the groove bottom surface 13 of the groove 11 together form the taiko structure of the wafer 1.

[0041] like Figure 4 ,as well as Figure 5As shown, a method for laser etching a thin wafer 1 to form a drum structure is disclosed, wherein the operating stage 2 is equipped with a rotary cryostat. The femtosecond laser 31 uses green light. The scanning spot 33 of the femtosecond laser 31 is 2 μm. However, this is not a limitation; at least one control module 4 controls the rotation of either the wafer 1 or the cylindrical laser array 3. During rotation, the cylindrical laser array 3 ablates the wafer 1 to form a thinned wafer 1. Therefore, the control module 4 may only control the operating stage 2 to rotate the wafer 1, or it may only control the rotation of the cylindrical laser array 3 to ablate the wafer 1 fixed to the operating stage 2. Alternatively, at least one control module 4 may simultaneously control the rotation of both the wafer 1 and the cylindrical laser array 3, forming a thinned drum structure wafer 1 during rotation.

[0042] The above description and explanation are merely illustrative of preferred embodiments of this invention. Those skilled in the art can make other modifications based on the following defined claims and the above description, but such modifications should still be within the spirit of this invention and the scope of its claims.

Claims

1. An apparatus for forming a drum structure by laser etching of a thin wafer, characterized in that, include: A long columnar laser array, equipped with at least one femtosecond laser; An operating platform is located below the long columnar laser array; A wafer is placed on the operating table, wherein the wafer surface to be thinned has an outer circumference of a wafer radius R0 and an inner circumference of a groove radius R1, wherein a femtosecond laser along one end of the elongated cylindrical laser array is focused on the central axis, and a femtosecond laser extending to the other end of the elongated cylindrical laser array is focused on the groove radius R1; and At least one control module controls the rotation of the wafer or the rotation of the long columnar array laser. In the rotating state, the long columnar array laser ablates the wafer, forming a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave cross-section, wherein the area around the center of the thinned wafer is not ablated, forming the wafer frame. The wafer frame and the groove bottom surface together form the taiko structure of the wafer.

2. The apparatus for forming a drum structure by laser etching of a thin wafer as described in claim 1, characterized in that, The control panel is a rotary refrigeration unit.

3. The apparatus for forming a drum structure by laser etching of a thin wafer as described in claim 1, characterized in that, This femtosecond laser uses green light.

4. The apparatus for forming a drum structure by laser etching of a thin wafer as described in claim 1, characterized in that, The scanning spot size of this femtosecond laser is 2 μm.

5. A method for forming a drum structure by laser etching of a thin wafer, characterized in that the steps include... include: Step 1: Using the wafer to be thinned to form a drum structure, hold the wafer on an operating table; Step 2: Using the operating table, rotate synchronously along the central axis of the wafer to thin the wafer into a drum structure; Step 3: Use at least one femtosecond laser to form a long columnar array laser. The long columnar array laser has a linear arrangement structure. The wafer surface to be thinned has an outer circumference of the wafer radius R0 and an inner circumference of the wafer radius R1. The femtosecond laser at one end of the long columnar array laser is focused on the central axis, and the femtosecond laser at the other end of the long columnar array laser is focused on the groove radius R1. Step 4: Using pulses from at least one femtosecond laser, a linear array of columnar light spots is formed to perform melt etching on the wafer surface; and Step 5: Using the long columnar array laser, the wafer to be thinned to form a taiko structure is directed at the rotating wafer. At the same time, a control module rotates the wafer at least once. During the rotation, the wafer is etched to form a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave cross-section. The area around the center of the thinned wafer is not etched, forming the wafer's frame. The wafer's frame and the groove bottom surface together form the taiko structure of the wafer.

6. A method for forming a drum structure by laser etching of a thin wafer, characterized in that the steps include... include: Step 1: Using the wafer to be thinned to form a drum structure, hold the wafer on an operating table; Step 2: Use at least one femtosecond laser to form a long columnar array laser. The long columnar array laser has a linear arrangement structure. The wafer surface to be thinned has an outer circumference of the wafer radius R0 and an inner circumference of the wafer radius R1. The femtosecond laser at one end of the long columnar array laser is focused on the central axis, and the femtosecond laser at the other end of the long columnar array laser is focused on the groove radius R1. Step 3: Using pulses from at least one femtosecond laser, a linear array of columnar light spots is formed to perform melt etching on the wafer surface. Step 4: Position one end of the long cylindrical laser array above the central axis of the wafer, and rotate the other end of the laser array to perform scanning; and Step 5: The long columnar array laser is directed at the rotating wafer to be thinned to form a taiko structure. At the same time, a control module rotates the long columnar array laser at least once. During the rotation, the wafer is etched to form a groove bottom surface in the center of the thinned wafer. The groove bottom surface forms a horizontal disk-shaped concave cross-section. The area around the center of the thinned wafer is not etched, forming the wafer's frame. The wafer's frame and the groove bottom surface together form the taiko structure of the wafer.

7. The method for forming a drum structure by laser etching of a thin wafer as described in claim 5 or 6, characterized in that, The control panel is equipped with a rotary refrigeration unit.

8. The method for laser etching a thin wafer to form a drum structure as described in claim 5 or 6, wherein the femtosecond laser is green light.

9. The method for forming a drum structure by laser etching of a thin wafer as described in claim 5 or 6, wherein the scanning spot of the femtosecond laser is 2 μm.

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