Substrate processing apparatus, electromagnetic wave shielding adjustment method, substrate processing method, semiconductor device manufacturing method, and program product

Abstract

Provided is a technique capable of preventing electromagnetic leakage. The substrate processing apparatus includes: a container for processing a substrate; a plasma generation unit provided on the outer periphery of the container, the plasma generation unit having an electrode to which high-frequency power is applied, a power feed line connected to the electrode, and a supply unit for supplying the high-frequency power to the electrode via the power feed line; a shielding case which is provided on the outer periphery of the electrode and shields electromagnetic waves radiated from the electrode; the opening part is arranged on the shielding cover and is used for inserting the feeder line; a plurality of shields provided so as to overlap each other on the periphery of the opening and on the periphery of a portion of the supply unit facing the opening; and a control unit that controls the plasma generation unit so as to be capable of moving relative to the shield case.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, an electromagnetic wave shielding adjustment method, a substrate processing method, a semiconductor device manufacturing method, and a process product. Background Technology

[0002] As part of the manufacturing process of semiconductor devices, a process is sometimes performed to modify the film formed on the substrate by plasma (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-75579 Summary of the Invention

[0006] This invention provides a technique for preventing electromagnetic leakage.

[0007] According to one aspect of the present invention, a technology is provided, wherein the technology comprises:

[0008] Container for processing substrates;

[0009] A plasma generation unit located on the outer periphery of the container has an electrode to which high-frequency power is applied, a feed line connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the feed line.

[0010] A shielding cover disposed on the outer periphery of the electrode and shielding electromagnetic waves radiated from the electrode;

[0011] An opening is provided in the shielding cover for the feeder line to pass through;

[0012] A plurality of shielding portions are provided around the opening and around the portion of the supply section opposite the opening, respectively, in an overlapping manner; and

[0013] A control unit that controls the plasma generation unit to move relative to the shielding cover.

[0014] Invention Effects

[0015] According to the present invention, electromagnetic leakage can be prevented. Attached Figure Description

[0016] Figure 1 This is a schematic configuration diagram of a substrate processing apparatus according to one aspect of the present invention.

[0017] Figure 2 This is a schematic diagram of a plasma generation unit used to illustrate one aspect of the present invention.

[0018] Figure 3 This is a control block diagram illustrating the control system of a controller for a substrate processing apparatus according to one aspect of the present invention.

[0019] Figure 4 This is a flowchart illustrating a substrate processing procedure according to one aspect of the present invention.

[0020] Explanation of reference numerals in the attached figures

[0021] 100 substrate processing apparatus

[0022] 200 wafers (an example of a substrate)

[0023] 203 Handling Containers (An Example of a Container)

[0024] 212 Resonant Coil (An Example of Electrodes)

[0025] 216 Plasma Generation Unit

[0026] 221 Control Department

[0027] 224 shielding cover

[0028] 277 Supply Department

[0029] 278 feeder line

[0030] 279 opening

[0031] 280 shielding section Detailed Implementation

[0032] The following is mainly based on Figures 1 to 4 This description illustrates one aspect of the present invention. It should be noted that the accompanying drawings used in the following description are all schematic diagrams. Furthermore, the dimensional relationships and proportions of the elements shown in the drawings are not necessarily consistent with reality. Moreover, the dimensional relationships and proportions of the elements are not necessarily consistent between multiple drawings.

[0033] (1) Composition of substrate processing device

[0034] like Figure 1 As shown, the substrate processing apparatus 100 includes a processing furnace 202 for plasma processing of a wafer 200, which serves as a substrate. The processing furnace 202 is provided with a processing container 203, which forms the container of the processing chamber 201. In other words, the substrate processing apparatus 100 is configured to perform plasma processing on the wafer 200 within the processing container 203. The processing container 203 has a dome-shaped upper container 210 and a bowl-shaped lower container 211.

[0035] The processing chamber 201 is formed by the upper container 210 covering the lower container 211. The upper container 210 is formed, for example, by quartz (SiO2), and the lower container 211 is formed, for example, by aluminum (Al).

[0036] In addition, such as Figure 1 As shown, a gate valve 244 is provided on the lower side wall of the lower container 211. The gate valve 244 is configured such that, when open, a conveying mechanism (not shown) can be used to convey the wafer 200 into the processing chamber 201 via the inlet / outlet 245, or to convey the wafer 200 out of the processing chamber 201. When closed, the gate valve 244 acts as a partition valve to maintain the airtightness of the processing chamber 201.

[0037] The processing chamber 201 includes: a plasma generation space 201a with resonant coils 212 serving as electrodes arranged around it; and a substrate processing space 201b communicating with the plasma generation space 201a and processing the wafer 200. The plasma generation space 201a is the space where plasma is generated, located within the processing chamber 201, above the lower end of the resonant coils 212 and below the upper end of the resonant coils 212. Conversely, the substrate processing space 201b is the space where the wafer 200 is processed using plasma, located below the lower end of the resonant coils 212.

[0038] [Support 217]

[0039] like Figure 1 As shown, a susceptor 217, which serves as a substrate mounting portion for placing the wafer 200, is disposed at the center of the bottom side of the processing chamber 201.

[0040] Inside the support 217, a heater 217b, which serves as a heating mechanism, is integrally embedded.

[0041] The support 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is provided inside the support 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275, which serves as an impedance adjustment unit.

[0042] Furthermore, the support 217 is provided with a support lifting mechanism 268 having a drive mechanism for raising and lowering the support. Also, the support 217 has a through hole 217a, and a wafer top lifting pin 266 is provided on the bottom surface of the lower container 211. The configuration is such that when the support 217 is lowered by the support lifting mechanism 268, the wafer top lifting pin 266 is in a non-contact state with the support 217, allowing the through hole 217a to penetrate.

[0043] The substrate mounting section of this method mainly consists of a support 217 and a heater 217b.

[0044] [Gas Supply Department 230]

[0045] like Figure 1 As shown, the gas supply unit 230 is located above the processing chamber 201. Specifically, a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210. The gas supply head 236 is configured to have a cup-shaped cover 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, which can supply various gases to the processing chamber 201.

[0046] A gas supply pipe 232 is connected to the gas inlet 234. The downstream end of a first gas supply pipe 232a for supplying the first gas, the downstream end of a second gas supply pipe 232b for supplying the second gas, and an inactive gas supply pipe 232c for supplying inactive gas are connected to the gas supply pipe 232 so that these supply pipes merge.

[0047] In the first gas supply pipe 232a, a flow controller (MFC) 252a, serving as a flow control device, and a valve 253a, serving as an on / off valve, are sequentially provided from the upstream side. In the second gas supply pipe 232b, an MFC 252b and a valve 253b are sequentially provided from the upstream side. In the inactive gas supply pipe 232c, an MFC 252c and a valve 253c are sequentially provided from the upstream side. It should be noted that, although not included in the substrate processing apparatus 100, a first gas supply source 250a is provided upstream of the MFC 252a in the first gas supply pipe 232a, a second gas supply source 250b is provided upstream of the MFC 252b in the second gas supply pipe 232b, and an inactive gas supply source 250c is provided upstream of the MFC 252c in the inactive gas supply pipe 232c.

[0048] A valve 243a is provided in the gas supply pipe 232. The gas supply unit 230 is configured to supply gas for processing the wafer 200 into the processing container 203.

[0049] The gas supply unit 230 (gas supply system) of this embodiment mainly consists of a gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, shielding plate 240, and gas outlet 239), a first gas supply pipe 232a, a second gas supply pipe 232b, an inactive gas supply pipe 232c, MFCs 252a, 252b, and 252c, and valves 253a, 253b, 253c, and 243a. Alternatively, the first gas supply source 250a, the second gas supply source 250b, and the inactive gas supply source 250c may also be included in the gas supply unit 230.

[0050] [Exhaust section 228]

[0051] A gas exhaust port 235 is provided on the side wall of the lower container 211 to discharge the gas in the processing chamber 201. The upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235. In the gas exhaust pipe 231, from the upstream side, there are sequentially provided an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment unit), a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum exhaust device.

[0052] The exhaust section 228 (exhaust system) of this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. Alternatively, a vacuum pump 246 may be included in the exhaust section 228.

[0053] [Plasma Generation Unit 216]

[0054] like Figure 1 as well as Figure 2 As shown, a resonant coil 212 to which high-frequency power is applied is provided on the outer periphery of the processing container 203 and on the outer side of the outer wall of the processing container 203. Specifically, a spiral resonant coil 212 is provided on the outer side of the side wall of the upper container 210 in a manner that surrounds the processing chamber 201. In other words, the spiral resonant coil 212 is provided in a manner that surrounds the processing container 203 from the radially outer side of the upper container 210 (the side away from the center of the upper container 210).

[0055] Additionally, an RF (Radio Frequency) sensor 272, a high-frequency power supply 273, and a matching circuit 274 for matching the impedance and output frequency of the high-frequency power supply 273 are connected to the resonant coil 212 via a feed line 278.

[0056] A high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. An RF sensor 272 is located on the output side of the high-frequency power supply 273 to monitor information about the traveling and reflected high-frequency waves supplied. The reflected wave power monitored by the RF sensor 272 is input to a matching converter 274, which controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power based on the reflected wave information input from the RF sensor 272, in a manner that minimizes the reflected wave.

[0057] The high-frequency power supply 273 includes: a power control mechanism (control circuit) comprising a high-frequency oscillation circuit and a preamplifier for specifying the oscillation frequency and output; and an amplifier (output circuit) for amplifying to the specified output. The power control mechanism controls the amplifier based on output conditions regarding frequency and power preset via an operation panel. The amplifier supplies a fixed high-frequency power to the resonant coil 212 via a transmission line.

[0058] To generate a standing wave of a specified wavelength, the resonant coil 212 is configured with an outer diameter, pitch, and number of turns to resonate at a fixed wavelength. In other words, the electrical length of the resonant coil 212 is set to be an integer multiple (one, two, ...) of the wavelength at a specified frequency of the high-frequency power supplied from the high-frequency power source 273. In other words, the substrate processing apparatus 100 has a high-frequency power source that supplies high-frequency power to the electrodes at a wavelength that is an integer multiple of the electrical length of the resonant coil 212.

[0059] The materials used to form the resonant coil 212 include copper tubes, copper sheets, aluminum tubes, aluminum sheets, and materials in which copper or aluminum is deposited on a polymer tape.

[0060] The two ends of the resonant coil 212 are electrically grounded, and at least one end of the resonant coil is grounded via a movable piece 213 in order to make fine adjustments to the electrical length of the resonant coil when the device is initially set up or when the processing conditions change. Figure 1 Reference numeral 214 indicates another fixed grounding point. Furthermore, in order to finely adjust the impedance of the resonant coil 212 when the device is initially set up or when the processing conditions change, a power supply section is formed between the grounded ends of the resonant coil 212 by a movable piece 215.

[0061] The movable piece 215 is connected to a feed line 278 that supplies high-frequency power to the directional resonant coil 212.

[0062] The feeder line 278 is plate-shaped, for example, formed of a copper-containing material. Specifically, the feeder line 278 is, for example, a copper-containing plate with a width of 50-60 mm and a thickness of 1 mm. It should be noted that the expression of a numerical range such as "50-60 mm" in this specification means that the lower and upper limits are included within that range. Thus, for example, "50-60 mm" means "more than 50 mm and less than 60 mm". The same applies to other numerical ranges.

[0063] The RF sensor 272, high-frequency power supply 273, and matching device 274 are housed within the housing 277a. The RF sensor 272, high-frequency power supply 273, and matching device 274 are used as a supply unit 277 to supply high-frequency power to the resonant coil 212 via the feed line 278. The supply unit 277 is located on the outside of the processing container 203.

[0064] The plasma generation unit 216 of this method is mainly composed of a resonant coil 212, a feed line 278, and a supply unit 277.

[0065] like Figure 1 As shown, a shielding cover 224 is provided on the outer periphery of the resonant coil 212. The shielding cover 224 covers the resonant coil 212, shields the electromagnetic waves radiated from the resonant coil 212, and forms a capacitance component (C component) between it and the resonant coil 212 as one of the components of the resonant circuit required to form the resonant circuit.

[0066] Specifically, the shielding cover 224 is formed using a conductive material such as aluminum alloy. The lower end of the shielding cover 224 is configured to be disposed on the upper end formed around the lower container 211.

[0067] An opening 279 is formed on the side of the shield 224 for the feed line 278 to pass through. The opening 279 is wider than the width of the feed line 278.

[0068] Around the end of the opening 279, an opening shield 280a is provided as a shield. The opening shield 280a is configured to extend along the feed line 278 toward the supply section 277. That is, the opening shield 280a is configured to cover the area around the feed line 278.

[0069] Furthermore, around the position (part) opposite to the opening 279 in the supply section 277, there are a feed shield 280b serving as a first feed shield and a feed shield 280c serving as a second feed shield. The feed shield 280b and feed shield 280c are each configured as part of the housing 277a constituting the supply section 277. It should be noted that the shield 280 is constituted by the opening shield 280a, the feed shield 280b, and the feed shield 280c.

[0070] The power supply shield 280b is configured to extend along the power supply line 278 toward the opening 279. The power supply shield 280b is configured to be located inside the opening shield 280a and surrounded by the inner surface of the opening shield 280a.

[0071] The power supply shield 280c is configured to extend along the power supply line 278 toward the shield 224. The power supply shield 280c is configured to be located outside the open shield 280a and surround the outer surface of the open shield 280a.

[0072] In other words, the power supply shield 280b and the power supply shield 280c are arranged with a gap between them. This allows the supply section 277 to be positioned horizontally (…). Figure 1 The middle is also called the front-to-back direction. Figure 2 (Also known as the vertical direction) moving upwards.

[0073] In other words, the power supply shielding portion 280b and the power supply shielding portion 280c are configured to cover and clamp the inner and outer surfaces of the open shielding portion 280a. It should be noted that the wall surface 280d between the power supply shielding portion 280b and the power supply shielding portion 280c of the housing 277a functions as a shielding portion for electromagnetic waves. That is, the wall surface 280d can also be included within the shielding portion 280.

[0074] In other words, the open shielding portion 280a is configured to be located outside the feed shielding portion 280b and inside the feed shielding portion 280c. In other words, the open shielding portion 280a and the feed shielding portions 280b and 280c are arranged in a manner that alternates with each other. By arranging the shielding portions 280a, 280b, and 280c in a manner that is substantially parallel and coincident with the feed line 278, electromagnetic waves leaking from the feed line 278 can be attenuated by reflection from the shielding portions 280a, 280b, and 280c and the wall surface 280d. As a result, electromagnetic leakage can be prevented. Preferably, the overlap between the open shielding portion 280a and the feed shielding portions 280b and 280c is increased, that is, the range of alternating overlap between the open shielding portion 280a and the feed shielding portions 280b and 280c is increased. This increases the attenuation of electromagnetic waves leaking from the feed line 278, further preventing electromagnetic leakage.

[0075] The plasma generating unit 216 is connected to a moving mechanism 281 that moves the plasma generating unit 216 as a whole. Furthermore, the opening shield 280a is configured to have a fixed relative position with respect to the plasma generating unit 216. In other words, the shield 224 is configured to have a fixed relative position with respect to the plasma generating unit 216.

[0076] That is, the plasma generation unit 216 is configured to be movable horizontally relative to the shielding cover 224 (i.e., the open shielding part 280a). This configuration allows the power supply shielding parts 280b and 280c to move relative to the open shielding part 280a, and the gap between the power supply shielding parts 280b and 280c and the open shielding part 280a can be adjusted. Therefore, shielding of the electromagnetic leakage generation site can be performed simultaneously with impedance fine-tuning.

[0077] Here, the width of each gap formed between the power supply shields 280b and 280c provided in the supply section 277 and the opening shield 280a provided in the opening section 279 is configured to be greater than the amount by which the plasma generating section 216 moves in a direction parallel to the opening surface of the opening section 279. In other words, the amount by which the plasma generating section 216 moves in the horizontal direction is set to be less than the width of each gap formed between the power supply shields 280b and 280c and the opening shield 280a. This configuration ensures that even if the plasma generating section 216 moves via the moving mechanism 281, gaps are still formed between the opening shield 280a and the power supply shields 280b and 280c.

[0078] In other words, the configuration allows the supply unit 277, the power supply line 278, and the resonant coil 212 to move simultaneously and integrally in the horizontal direction relative to the shield 224 with the opening 279, via the moving mechanism 281. This configuration, by moving only the power supply side that supplies high-frequency power to the resonant coil 212, simplifies control.

[0079] [Controller 221]

[0080] like Figure 1 As shown, the controller 221, as the control unit, is configured to control APC valves 242 and 243b and vacuum pump 246 via signal line A, support lifting mechanism 268 via signal line B, and heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C. Furthermore, the controller 221 is configured to control gate valve 244 via signal line D, RF sensor 272, high-frequency power supply 273, matching device 274 and moving mechanism 281 via signal line E, and MFCs 252a-252c and valves 253a-253c and 243a via signal line F.

[0081] like Figure 3 As shown, the controller 221 is configured as a computer having a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. An input / output device 222, such as a touch panel or a display, is connected to the controller 221.

[0082] Here, the input / output device 222 receives an operation command and processing conditions as movement information for moving the moving mechanism 281. Additionally, the input / output device 222 displays the amount of movement of the moving mechanism 281 relative to a predetermined reference position.

[0083] Specifically, the input / output device 222 serves as a display unit for setting the movement distance of the plasma generating unit 216 and an operation unit for setting the movement amount (also called movement distance) of the plasma generating unit 216. In other words, the input / output device 222 can set the horizontal movement amount of the moving mechanism 281 on the display screen. That is, the CPU 221a is configured to display the output result in the input / output device 222, and to control the movement of the moving mechanism 281 by setting the horizontal movement distance through input to the input / output device 222.

[0084] The storage device 221c is composed of, for example, flash memory, HDD (Hard Disk Drive), etc. Within the storage device 221c, control programs for controlling the operation of the substrate processing apparatus, process recipes that record the sequence and conditions of substrate processing (described later), and recipe execution programs for executing the process recipes are readablely stored.

[0085] The recipe execution program is a program that combines various processes in the substrate processing steps described later, executed by the CPU 221a, to obtain a specified result. It functions as a program. Hereinafter, the recipe execution program and control program will be collectively referred to as a program (program product). It should be noted that the term "program" used in this specification includes cases where only the recipe execution program unit is included, cases where only the control program unit is included, or cases where both are included. Furthermore, the RAM 221b is configured as a memory area (working area) for temporarily storing programs and data read by the CPU 221a.

[0086] In this method, various processing conditions are stored in the storage device 221c. The processing conditions include at least one of the following: the temperature of the wafer 200 being processed, the pressure of the processing chamber 201, the type of gas used to process the wafer 200, the flow rate of the gas used to process the wafer 200, the power supplied to the resonant coil 212, and the amount of horizontal movement of the plasma generation unit 216 implemented by the moving mechanism 281.

[0087] I / O port 221d is connected to the aforementioned MFC252a-252c, valves 253a-253c, 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching unit 274, support lifting mechanism 268, heater power adjustment mechanism 276, impedance variable mechanism 275, and moving mechanism 281.

[0088] CPU 221a is configured to read and execute control programs from storage device 221c, and to read process recipes from storage device 221c based on inputs such as operation commands from input / output device 222.

[0089] Furthermore, CPU 221a is configured to control the opening adjustment of APC valve 242, the opening and closing of valve 243b, and the start and stop of vacuum pump 246 via I / O port 221d and signal line A, according to the read process recipe. Moreover, CPU 221a is configured to control the lifting and lowering of support lifting mechanism 268 via signal line B, control the adjustment of electrical power supply to heater 217b (temperature adjustment) based on heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C, and control the opening and closing of gate valve 244 via signal line D. In addition, the CPU221a is configured to control the operation of the RF sensor 272, the matching device 274 and the high-frequency power supply 273 via the signal line E, the movement of the plasma generation unit 216 based on the moving mechanism 281, the flow rate adjustment of various gases based on MFC 252a to 252c via the signal line F, and the opening and closing of valves 253a to 253c and 243a.

[0090] Specifically, CPU221a is configured to be controlled in such a way that the plasma generating section 216 can be moved horizontally relative to the opening 279. For example, in accordance with the directionality of electromagnetic waves, the plasma generating section 216 can be moved in the direction of strong electromagnetic wave intensity and the gap between the opening shielding section 280a and the power supply shielding sections 280b and 280c can be reduced to attenuate electromagnetic waves.

[0091] The controller 221 is configured to install the aforementioned program stored in an external storage device (such as magnetic disks, floppy disks, and hard disks, optical discs such as CDs and DVDs, USB storage devices, and memory cards) 223 onto a computer. The storage device 221c and the external storage device 223 are configured as recording media readable by a computer. Hereinafter, these will be collectively referred to as recording media. In this specification, the term "recording media" includes cases involving only the storage device 221c, cases involving only the external storage device 223, or cases involving both. It should be noted that the program can be provided to the computer without using the external storage device 223, but via communication mechanisms such as the Internet and dedicated lines; or the program provided by communication mechanisms such as the Internet and dedicated lines can be stored on the recording medium for use.

[0092] (2) Substrate processing process

[0093] use Figure 4 This section describes an example of forming a film comprising specified elements on a wafer 200 using the substrate processing apparatus 100 described above as one of the substrate processing steps in the manufacturing process of a semiconductor device (equipment). In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0094] [Electromagnetic wave shielding adjustment procedure]

[0095] First, the plasma generating unit 216 moves relative to the shielding cover 224 via the moving mechanism 281, thereby adjusting the positions of the feed shielding units 280b and 280c relative to the open shielding unit 280a. In other words, while fine-tuning the impedance, the horizontal position of the plasma generating unit 216 moves towards the position that shields the electromagnetic waves leaking from the resonant coil 212 and the feed line 278.

[0096] [Substrate handling process S110]

[0097] In the substrate handling process S110, the wafer 200 is moved into the processing chamber 201.

[0098] Specifically, the support lifting mechanism 268 lowers the support 217 to the transport position of the wafer 200, so that the wafer top lifting pin 266 passes through the through hole 217a of the support 217.

[0099] Then, gate valve 244 is opened, and wafer 200 is moved into processing chamber 201 from the vacuum transfer chamber adjacent to processing chamber 201 using a wafer transfer mechanism (not shown). The moved wafer 200 is supported horizontally on wafer lifting pins 266 protruding from the surface of support 217. After wafer 200 is moved into processing chamber 201, the wafer transfer mechanism retracts out of processing chamber 201, closing gate valve 244 and sealing processing chamber 201. Furthermore, support lifting mechanism 268 raises support 217, thereby supporting wafer 200 on the upper surface of support 217.

[0100] [Heating and vacuum exhaust process S120]

[0101] In the heating and vacuum degassing process S120, the wafer 200 is heated and placed into the processing chamber 201.

[0102] Heater 217b preheats the wafer 200, holding it on a support 217 with heater 217b embedded therein, thereby heating the wafer 200. Here, the wafer 200 is heated in a manner that brings it to a target temperature. Additionally, during the heating of the wafer 200, vacuum pump 246 evacuates the processing chamber 201 via gas exhaust pipe 231, bringing the pressure in the processing chamber 201 to a predetermined value. Vacuum pump 246 operates at least until the substrate removal process S160, described later, is completed.

[0103] [Reaction gas supply process S130]

[0104] In the reaction gas supply process S130, the supply of the first gas and the second gas as reaction gases is started. Specifically, valves 253a and 253b are opened, and the supply of the first gas and the second gas to the processing chamber 201 is started while the flow is controlled by MFCs 252a and 252b.

[0105] Furthermore, the venting of the processing chamber 201 is controlled by adjusting the opening of the APC valve 242 to achieve the target pressure in the processing chamber 201. In this way, while the processing chamber 201 is properly vented, the supply of the first gas and the second gas continues until the end of the plasma processing step S140 described later.

[0106] As the first gas, an oxygen-containing gas can be used, for example. As an oxygen-containing gas, oxygen (O2) can be used, for example.

[0107] As the second gas, a hydrogen-containing gas can be used, for example. Hydrogen gas (H2) can be used, for example.

[0108] [Plasma processing step S140]

[0109] Once the pressure in the processing chamber 201 stabilizes, in the plasma processing step S140, high-frequency power is supplied from the high-frequency power supply 273 to the resonant coil 212 via the RF sensor 272.

[0110] Thus, a high-frequency electric field is formed within the plasma generation space 201a, where the first gas and the second gas are supplied. Through this electric field, a ring-shaped inductive plasma with the highest plasma density is excited at a height corresponding to the electrical midpoint of the resonant coil 212 within the plasma generation space 201a. The plasma-like first and second gases are excited and decomposed, generating reactive substances such as free radicals (active substances) and ions of the elements contained in the first and second gases. Specifically, for example, oxygen-containing oxygen free radicals (oxygen-containing active substances) and oxygen ions, and hydrogen-containing hydrogen free radicals (hydrogen-containing active substances) and hydrogen ions are generated.

[0111] Furthermore, for the wafer 200 held on the support 217 within the substrate processing space 201b, free radicals and ions generated by inductive plasma are supplied to trenches on the surface of the wafer 200. The supplied free radicals and ions react with the sidewalls of the trenches, and the surface layer is modified. Specifically, for example, the silicon layer on the surface is modified into a silicon oxide layer.

[0112] Then, after the prescribed processing time, the power supply from the high-frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 is stopped. Additionally, valves 253a and 253b are closed, stopping the supply of the first gas and the second gas to the processing chamber 201. This concludes the plasma processing step S140. The processing time in this specification refers to the duration of the processing. This is also true in the following description.

[0113] [Vacuum exhaust process S150]

[0114] After the supply of the first and second gases is stopped, in the vacuum exhaust process S150, the processing chamber 201 is vacuum-exhausted via the gas exhaust pipe 231. As a result, the first and second gases in the processing chamber 201, and the waste gas generated by the reaction of these gases, are discharged to the outside of the processing chamber 201. Then, the opening of the APC valve 242 is adjusted to bring the pressure in the processing chamber 201 to the same level as the pressure in the vacuum transport chamber (the destination of the wafer 200, not shown) adjacent to the processing chamber 201.

[0115] [Substrate removal process S160]

[0116] After the processing chamber 201 reaches the specified pressure, in the substrate removal process S160, the support 217 descends to the wafer 200 transport position, and the wafer 200 is supported on the wafer lifting pin 266. Then, the gate valve 244 opens, and the wafer transport mechanism moves the wafer 200 out of the processing chamber 201. This completes the substrate processing steps of this method.

[0117] As explained above, in the substrate processing apparatus 100, the electromagnetic waves leaking from the feed line 278 are attenuated by the shielding portions 280a, 280b, and 280c respectively provided in the opening 279 and the supply portion 277. As a result, electromagnetic leakage can be prevented.

[0118] It should be noted that this method describes the situation where the supply unit 277 is moved in the horizontal direction to prevent electromagnetic leakage, but it is not limited to this; the supply unit 277 can also be moved in the vertical direction. Figure 1 The supply unit 277 moves upwards (in the vertical direction). Therefore, by moving the supply unit 277 in the horizontal or vertical direction, the electromagnetic waves leaking from the feeder line 278 can be further attenuated.

[0119] [Other methods]

[0120] The above describes one aspect of the present invention, but the present invention is not limited to the above aspect, and various modifications can be made without departing from its spirit.

[0121] The above description uses an opening shield 280a on the opening 279 side and power supply shields 280b and 280c on the supply section 277 side, but the present invention is not limited to this configuration. For example, it is also possible to provide three or more shields on the supply section 277 side and multiple shields on the opening 279 side, or multiple shields on both the opening 279 side and the supply section 277 side. The same effects as described above can be achieved in this embodiment.

[0122] Furthermore, the above description uses the case where the electromagnetic wave shielding adjustment process is performed before the substrate transfer process S110, but the present invention is not limited to this. For example, it can also be performed after the substrate transfer process S110 and before the plasma processing process S140. In this method, the same effect as the above method can also be obtained.

[0123] It should be noted that the above description details specific methods, and the present invention is not limited to these methods. Those skilled in the art will know that various other methods can be implemented within the scope of the present invention.

[0124] In addition, although not specifically stated in the above method, unless otherwise specified in the instruction manual, each element is not limited to one and multiple elements may exist.

[0125] Furthermore, the above-described method illustrates an example of forming a film using a single-wafer type substrate processing apparatus that processes one or more substrates at a time. The present invention is not limited to the above-described method; for example, it is also suitable for forming films using a batch substrate processing apparatus that processes multiple substrates at a time. Additionally, the above-described method illustrates an example of forming a film using a substrate processing apparatus equipped with a cold-wall type furnace. The present invention is not limited to the above-described method; it is also suitable for forming films using a substrate processing apparatus equipped with a hot-wall type furnace.

[0126] When using these substrate processing apparatuses, each process can be performed in the same processing sequence and processing conditions as described above and in the modified examples, and the same effect as described above and in the modified examples can be obtained.

[0127] The above methods and variations can be used in appropriate combinations. The processing order and conditions can be set to be the same as those in the above methods and variations.

Claims

1. A substrate processing apparatus, wherein, have: Container for processing substrates; A plasma generation unit located on the outer periphery of the container has an electrode to which high-frequency power is applied, a feed line connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the feed line. A shielding cover disposed on the outer periphery of the electrode and shielding electromagnetic waves radiated from the electrode; An opening is provided in the shielding cover for the feeder line to pass through; Multiple shielding portions are provided around the opening and around the portion of the supply portion opposite to the opening, respectively, in an overlapping manner. and A control unit that controls the plasma generation unit to move relative to the shielding cover.

2. The substrate processing apparatus according to claim 1, wherein, It also has a moving mechanism that allows the plasma generating unit to move as a whole. The control unit is configured to control the operation of the moving mechanism.

3. The substrate processing apparatus according to claim 1 or 2, wherein, The plurality of shielding portions include an opening shielding portion disposed at the end of the opening portion and configured to extend along the feed line toward the supply portion.

4. The substrate processing apparatus according to claim 3, wherein, The plurality of shielding portions include a plurality of power supply shielding portions located at the portion opposite to the opening of the supply portion and arranged to extend along the power supply line toward the shielding cover.

5. The substrate processing apparatus according to claim 4, wherein, The plurality of power supply shields include a first power supply shield that is configured to be surrounded by the inner surface of the open shield.

6. The substrate processing apparatus according to claim 4 or 5, wherein, The plurality of power supply shields include a second power supply shield configured to surround the outer surface of the open shield.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein, The plurality of shielding parts are arranged with gaps between them.

8. The substrate processing apparatus according to any one of claims 4 to 6, wherein, The plurality of power supply shields are each formed by a portion of the housing of the supply unit.

9. The substrate processing apparatus according to any one of claims 1 to 8, wherein, The control unit is configured to control the plasma generation unit to move horizontally relative to the opening.

10. The substrate processing apparatus according to any one of claims 3 to 6, wherein, The opening shield is configured to have a fixed relative position to the plasma generating part.

11. The substrate processing apparatus according to any one of claims 1 to 10, wherein, The shield is configured to have a fixed relative position to the plasma generating unit.

12. The substrate processing apparatus according to any one of claims 1 to 11, wherein, The width of the gap in the horizontal direction between the shielding part provided in the supply section and the shielding part provided in the opening section is configured to be greater than the amount by which the plasma generating section moves in a direction parallel to the opening surface of the opening section.

13. The substrate processing apparatus according to claim 2, wherein, It also includes a display unit and an operation unit. The display unit has a screen that allows setting the movement distance of the plasma generating unit, and the operation unit allows setting the movement distance. The control unit is configured to control the movement of the moving mechanism according to the moving distance set by the operation unit.

14. The substrate processing apparatus according to claim 13, wherein, The operation unit is configured to be able to set the movement distance on the screen displayed on the display unit.

15. The substrate processing apparatus according to any one of claims 1 to 14, wherein, The power supply line is a plate made of copper-containing material, and the width of the opening is wider than the width of the plate.

16. An electromagnetic wave shielding adjustment method, wherein, The process includes an adjustment step in which electromagnetic waves radiated from the electrodes are shielded by multiple shielding parts by moving the plasma generation unit relative to the shielding cover. The plasma generation unit is located on the outer periphery of the container of the processing substrate, and has the electrode to which high-frequency power is applied, a feed line connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the feed line. The shielding cover is disposed on the outer periphery of the electrode and shields the electromagnetic waves radiated from the electrode. The plurality of shielding portions are arranged in a manner that overlaps with each other around the opening provided in the shielding cover for the power supply line to pass through, and around the portion of the supply portion opposite to the opening.

17. A substrate processing method, wherein, have: A process for adjusting electromagnetic waves radiated from electrodes by a plurality of shielding parts through relative movement of a plasma generating unit relative to a shielding cover, wherein the plasma generating unit is disposed on the outer periphery of a container for processing substrates and has electrodes to which high-frequency power is applied, a feed line connected to the electrodes, and a supply unit that supplies the high-frequency power to the electrodes via the feed line; the shielding cover is disposed on the outer periphery of the electrodes and shields electromagnetic waves radiated from the electrodes; the plurality of shielding parts are respectively arranged in an overlapping manner around an opening in the shielding cover through which the feed line passes, and around a portion of the supply unit opposite to the opening; and The process of processing the substrate.

18. A method for manufacturing a semiconductor device, wherein, have: A process for adjusting electromagnetic waves radiated from electrodes by a plurality of shielding parts through relative movement of a plasma generating unit relative to a shielding cover, wherein the plasma generating unit is disposed on the outer periphery of a container for processing substrates and has electrodes to which high-frequency power is applied, a feed line connected to the electrodes, and a supply unit that supplies the high-frequency power to the electrodes via the feed line; the shielding cover is disposed on the outer periphery of the electrodes and shields electromagnetic waves radiated from the electrodes; the plurality of shielding parts are respectively arranged in an overlapping manner around an opening in the shielding cover through which the feed line passes, and around a portion of the supply unit opposite to the opening; and The process of processing the substrate.

19. A program product, wherein, The computer enables the substrate processing apparatus to execute the following process: The process involves adjusting the electromagnetic waves radiated from the electrode by a plurality of shielding parts through relative movement of the plasma generation unit relative to the shielding cover. The plasma generation unit is located on the outer periphery of a container for processing substrates and has the electrode to which high-frequency power is applied, a feed line connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the feed line. The shielding cover is located on the outer periphery of the electrode and shields the electromagnetic waves radiated from the electrode. The plurality of shielding parts are arranged in a manner that overlaps with each other around the opening of the shielding cover through which the feed line passes and around the portion of the supply unit opposite to the opening.

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