Superconducting quantum computing room temperature amplifier

Abstract

The invention provides a superconducting quantum computing room temperature amplifier which is applied to the technical field of quantum bit amplification and reading. According to the amplifier, a kovar metal cavity comprises a plurality of radio frequency isolation cavities which are isolated from one another through partition walls and are electrically connected through radio frequency transmission glass beads sintered in the partition walls; the power supply isolation cavity and the plurality of radio frequency isolation cavities are mutually spatially and electromagnetically isolated in the vertical direction, and the power supply isolation cavity and the plurality of radio frequency isolation cavities are electrically connected through a plurality of sintered power supply transmission glass beads in the vertical direction; the multi-stage radio frequency amplification circuit performs multi-stage amplification processing on the radio frequency signal and outputs a target radio frequency signal; the double-layer power supply device and circuit comprises a four-layer PCB and double-face power supply devices, the periphery of the four-layer PCB is grounded, wrapped with gold, welded, suspended and fixed to the inner side wall of the power supply isolation cavity, and the double-face power supply devices are distributed on the upper side and the lower side of the four-layer PCB. And a plurality of power supply transmission glass beads penetrating through the four layers of PCBs and the bottoms of the plurality of radio frequency isolation cavities are sintered to supply power to the multi-stage radio frequency amplification circuit.

Description

Technical Field

[0001] This invention relates to the field of quantum bit amplification and readout technology, and more specifically to a superconducting quantum computing room temperature amplifier. Background Technology

[0002] In the field of superconducting quantum mechanics, the radio frequency signals of qubits are relatively weak and susceptible to noise, thus requiring amplification by quantum amplifiers to obtain amplified signals that meet the requirements of measurement and control processing. However, existing low-noise quantum amplifiers for the 4-8 GHz frequency band are relatively large, making it difficult to meet the high demands for multi-channel integration in quantum mechanics applications such as electronic measurement and control boards.

[0003] In the process of realizing the above-mentioned inventive concept, it was found that: existing room temperature quantum amplifiers are large in size and difficult to apply to micro-circuits with high integration requirements. At the same time, the multi-stage circuit structures used to amplify radio frequency signals in existing amplifiers are prone to mutual interference, resulting in high noise in the amplifier and thus posing a technical problem of difficulty in obtaining high-quality amplified signals. Summary of the Invention

[0004] In view of the above problems, the present invention provides a superconducting quantum computing room temperature amplifier.

[0005] According to a first aspect of the present invention, a superconducting quantum computing room-temperature amplifier is provided, comprising: a Kovar metal cavity including a plurality of radio frequency isolation cavities and a power isolation cavity, wherein the plurality of radio frequency isolation cavities are isolated from each other by partition walls and electrically connected via radio frequency transmission glass beads sintered in the partition walls; the power isolation cavity is spatially electromagnetically isolated from the plurality of radio frequency isolation cavities in the vertical direction and is electrically connected to the plurality of radio frequency isolation cavities in the vertical direction via a plurality of sintered power transmission glass beads; and a multi-stage radio frequency amplification module disposed within the plurality of radio frequency isolation cavities, the multi-stage radio frequency amplification module including a multi-stage radio frequency amplification circuit for amplifying radio frequency signals. The signal undergoes multi-stage amplification to obtain and output the target RF signal, thereby improving the amplifier's gain and saturation power, and reducing the noise of RF signal transmission loss. A double-sided power supply device and circuit are housed within a power isolation cavity, comprising a four-layer PCB board and the double-sided power supply device. The four-layer PCB board is grounded and gold-plated around its perimeter, with the metal edges suspended and fixed to the inner wall of the power isolation cavity by soldering. The double-sided power supply device is distributed on the upper and lower sides of the four-layer PCB board. The double-sided power supply device supplies power to the multi-stage RF amplifier circuit through multiple power transmission beads sintered through the four-layer PCB board and the bottom of multiple RF isolation cavities.

[0006] According to an embodiment of the present invention, when the multi-stage RF amplifier circuit is a three-stage RF amplifier circuit, the multi-stage RF amplifier circuit includes: a first-stage RF amplifier circuit disposed in a first RF isolation cavity, comprising a first-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The first-stage gallium arsenide monolithic microwave integrated circuit and the microstrip line are disposed on the microstrip line substrate using a micro-assembly process, and the surface-mount capacitor is disposed on the microstrip line using a micro-assembly process. The first-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected by bonding wires to amplify the initial RF signal to obtain a first-stage amplified RF signal; and a second-stage RF amplifier circuit disposed in a second RF isolation cavity, comprising a second-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The second-stage gallium arsenide monolithic microwave integrated circuit and the microstrip line are disposed on the microstrip line substrate using a micro-assembly process, and the surface-mount capacitor is disposed on the microstrip line substrate using a micro-assembly process. On the microstrip line, the second-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected by bonding wires to amplify the first-stage amplified RF signal transmitted via the RF transmission glass bead, obtaining the second-stage amplified RF signal. The third-stage RF amplifier circuit, located in the third RF isolation cavity, includes the third-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, the microstrip line substrate, the surface-mount capacitor, the ceramic capacitor, the spiral inductor, and the ultra-wideband microwave resistor. The third-stage gallium arsenide monolithic microwave integrated circuit, the ceramic capacitor, and the microstrip line are mounted on the microstrip line substrate using micro-assembly technology. The surface-mount capacitor, the ultra-wideband microwave resistor, and the spiral inductor are mounted on the microstrip line using micro-assembly technology. The third-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, the microstrip line substrate, the surface-mount capacitor, the ceramic capacitor, the spiral inductor, and the ultra-wideband microwave resistor are interconnected by bonding wires to amplify the second-stage amplified RF signal transmitted via the RF transmission glass bead, obtaining the target RF signal.

[0007] According to an embodiment of the present invention, multiple sealed and isolated radio frequency isolation cavities are used to prevent high saturation power from being transmitted back to the input of the amplifier's radio frequency signal via space, which could cause self-oscillation and electromagnetic interference. Combined with 50-ohm radio frequency transmission glass beads sintered in the partition walls, the multi-stage radio frequency amplifier circuit can amplify the radio frequency signal at a high gain level of >75dB when the saturation power is >20dBm and the noise figure is ≤0.9dB.

[0008] According to an embodiment of the present invention, gold wires bonded to one side of each cylindrical power transmission glass bead penetrating the bottom of the RF isolation cavity are soldered to the positive and negative power pads in each stage of the gallium arsenide monolithic microwave integrated circuit in the multi-stage RF amplifier circuit, so that the dual-layer power supply device and circuit provide a target positive voltage to the multi-stage RF amplifier circuit through multiple power transmission glass beads and bonding wires, and provide a target negative voltage for modulation bias point to the third-stage RF amplifier circuit. The diameter of the power transmission glass bead is 0.3 mm. The microstrip line electrically connected to the bonding wire on the output side of the cylindrical RF transmission glass bead is soldered to the RF input pad of the gallium arsenide monolithic microwave integrated circuit, and the microstrip line electrically connected to the bonding wire on the input side of the RF transmission glass bead is soldered to the RF output pad of the gallium arsenide monolithic microwave integrated circuit, so that the amplified RF signal is transmitted between adjacent RF amplifier circuits through the RF transmission glass beads sintered in the partition wall. The resistance of the RF transmission glass bead is 50 ohms.

[0009] According to an embodiment of the present invention, the top cylindrical diameter of the power transmission glass bead or radio frequency transmission glass bead with a cylindrical structure is 0.3 mm. The top surface of the power transmission glass bead or radio frequency transmission glass bead includes a gold wire bonding region and a non-bonded region. The diameter of the gold wire bonding region is 0.5 μm to 2 μm, and it is made of nickel or copper with a surface roughness Ra≤0.8 μm. The coating diameter of the non-bonded region is 0.1 μm to 0.3 μm.

[0010] According to an embodiment of the present invention, the dual-layer power supply device and circuit include: multiple positive output circuits, including multiple substrate low-noise capacitors and positive conversion units, for stepping down the input voltage to obtain a target positive voltage that is provided to a multi-stage RF amplifier circuit through multiple positive power supply transmission glass beads sintered through; positive and negative output circuits, including multiple low-noise capacitors, multiple ceramic capacitors, multiple resistors, positive and negative conversion units and negative conversion units, for converting the input voltage from positive to negative to obtain a target negative voltage, and providing the target negative voltage to the last stage RF amplifier circuit through a negative power supply transmission glass bead sintered through the bottom of the last RF isolation cavity; and a power supply input glass bead sintered through the power isolation cavity, with its first end electrically connected to the input power supply and its second end electrically connected to the multiple positive output circuits and the positive and negative output circuits, for transmitting the input voltage to the multiple positive output circuits and the positive and negative output circuits.

[0011] According to an embodiment of the present invention, multiple substrate low-noise capacitors in the positive output circuit are respectively disposed at the input and output terminals of the positive conversion unit for filtering and buffering the voltage; the positive conversion unit is used to step down the filtered and buffered input voltage to obtain a low-noise target positive voltage; multiple low-noise capacitors, multiple ceramic capacitors, and multiple resistors in the positive and negative output circuits are respectively disposed at the input and output terminals of the positive and negative conversion units and the negative conversion unit for filtering and buffering the voltage; the positive and negative conversion units are electrically connected to the negative conversion unit for converting the input voltage from positive to negative to obtain an intermediate negative voltage; the negative conversion unit is used to boost the intermediate negative voltage to obtain a target negative voltage, wherein the intermediate negative voltage is less than the target negative voltage.

[0012] According to an embodiment of the present invention, a positive voltage conversion unit is used to step down the 6V input voltage to provide a target positive voltage of 5V to the multi-stage RF amplifier circuit; a positive-to-negative voltage conversion unit is used to convert the 6V input voltage from positive to negative to provide an intermediate negative voltage of -3.3V to the negative voltage conversion unit; and a negative voltage conversion unit is used to boost the intermediate negative voltage of -3.3V to provide a target negative voltage of -0.4V to the last stage RF amplifier circuit.

[0013] According to an embodiment of the present invention, the length of the four-layer PCB board is 23.9-24.9 mm, the width of the four-layer PCB board is 7.0-8.0 mm, the length of the multi-stage RF amplification module is 26.2-27.2 mm, the width of the multi-stage RF amplification module is 15.9-16.9 mm, the height of the multi-stage RF amplification module is 10.0-11.0 mm, and the diameter of the power supply transmission glass bead is 0.18-0.50 mm.

[0014] According to an embodiment of the present invention, the quantum bit amplifier further includes: a radio frequency (RF) input terminal, electrically connected to the first RF isolation cavity among a plurality of RF isolation cavities via an RF input glass bead, for receiving and transmitting RF signals to a first-stage RF amplification circuit located within the first RF isolation cavity; and a radio frequency (RF) output terminal, electrically connected to the last RF isolation cavity among a plurality of RF isolation cavities via an RF output glass bead, for outputting a target RF signal. The RF glass bead has an external interface pin that mates with a female SMA connector for input and output. A first Kovar metal cover plate is laser-sealed directly below the power isolation cavity to seal the power isolation cavity; a second Kovar metal cover plate is parallelly sealed directly above the plurality of RF isolation cavities to seal the plurality of RF isolation cavities.

[0015] According to an embodiment of the present invention, the outer contour of the Kovar metal cavity is formed by the outer wall, and the partition wall divides multiple electromagnetically isolated radio frequency (RF) isolation cavities, as well as separating the RF isolation cavities from the power isolation cavities. This rational design and division of the spatial area results in multiple electromagnetically isolated isolation cavities, avoiding electromagnetic interference and noise effects between different isolation cavities during operation, thus producing an amplifier with a low-noise operating environment. It also provides the foundation for a highly sealed, compact, and "quiet" electromagnetic environment for this amplifier, which is extremely sensitive to external electromagnetic disturbances. This reduces decoherence sources introduced by the amplifier's own instability, helps maintain a longer coherence time for the qubits, ensures stable operation of the entire measurement link, improves the reproducibility of experimental results, and provides an excellent device environment to avoid self-oscillation and electromagnetic interference.

[0016] Further integration with RF transmission beads sintered within the partition wall allows for high-gain, high-saturation-power amplification of the RF signal through a multi-stage RF amplifier circuit in a closed and electromagnetically isolated environment, enabling faster recovery of weak read signals. This shortens the "dead time" between operations, improving measurement speed and data throughput, and accelerating experimental iterations and algorithm execution. The amplified RF signal is then transmitted to the next stage of the RF amplifier circuit via the RF transmission beads. The sealed space formed by the RF beads and the partition wall prevents electromagnetic interference or noise from other areas from affecting the amplifier circuit within the RF cavity, allowing the low-noise amplifier to maximize the signal-to-noise ratio in a closed environment, ensuring that the weak quantum signal is not drowned out by background noise during amplification. This translates to a lower error rate per measurement and more accurate reads, directly improving the fidelity of qubit state reads, which is fundamental for effective quantum error correction.

[0017] Furthermore, by employing a double-sided, dual-layer power supply device, which is positioned on both sides of a four-layer PCB, the size of both the power supply device and the amplifier is significantly reduced. This results in a highly compact amplifier, minimizing the risks of signal attenuation, phase delay, and external interference coupling introduced by long transmission lines, and facilitating integration with readout lines for multiple qubits. A power transmission bead penetrating the bottom of the RF chamber transmits the supply voltage generated by the double-sided power supply circuit to the RF amplification circuit. Improving the internal structural compactness of the superconducting quantum computing room temperature amplifier in a low-noise, high-gain, and high-saturation-power environment allows it to meet the high demands of multi-channel, board-based, and integrated measurement and control systems. This enhances the system's mechanical and thermal stability, making it more suitable for deployment in systems requiring strictly controlled environments. It also reduces the extreme requirements of the front-end cryogenic amplifier or optimizes the amplification link configuration, simplifying the complexity and thermal load management of cryogenic systems. Attached Figure Description

[0018] The above-described features, other objects, and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0019] Figure 1 A schematic diagram of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention is shown;

[0020] Figure 2 A schematic diagram of a multi-stage radio frequency amplifier circuit according to an embodiment of the present invention is shown;

[0021] Figure 3 A schematic diagram of a radio frequency transmission glass bead and a power supply transmission glass bead in a circuit according to an embodiment of the present invention is shown;

[0022] Figure 4 A schematic diagram of glass bead transmission according to an embodiment of the present invention is shown;

[0023] Figure 5 A schematic diagram of a double-sided power supply circuit in a double-layer power supply device and circuit according to an embodiment of the present invention is shown.

[0024] Figure 6a A schematic diagram of a conversion unit according to an embodiment of the present invention is shown;

[0025] Figure 6b A schematic diagram of a conversion unit according to another embodiment of the present invention is shown;

[0026] Figure 6c A schematic diagram of a conversion unit according to yet another embodiment of the present invention is shown;

[0027] Figure 7 A schematic diagram of a superconducting quantum computing room temperature amplifier according to another embodiment of the present invention is shown;

[0028] Figure 8 The graphs showing the noise and gain test curves of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention are illustrated.

[0029] Figure 9 A graph showing the 5HGz power curve of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention is shown. Detailed Implementation

[0030] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0031] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The terms “comprising,” “including,” etc., as used herein indicate the presence of features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0032] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0033] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0034] In the technical solution of this invention, the user information (including but not limited to user personal information, user image information, user device information, such as location information) and data (including but not limited to data used for analysis, stored data, and displayed data) involved are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, storage, use, processing, transmission, provision, invention, and application of related data all comply with relevant laws, regulations, and standards, take necessary confidentiality measures, do not violate public order and good morals, and provide corresponding operation entry points for users to choose to authorize or refuse.

[0035] The qubits in a superconducting quantum bit amplifier typically operate at power levels in the -120 dBm range. The quantum bit radio frequency (RF) signal is transmitted via a coupled resonant cavity to a Josephson parametric amplifier (JPA) for amplification. Since parametric amplifiers typically have a high noise temperature (300 mK) but only a gain of 15 dB, a 4K cryogenic amplifier is needed to compensate for the insufficient gain of the parametric amplifier. A 4K cryogenic amplifier has approximately 40 dB of gain and a noise temperature in the 4K range. After amplification by the cryogenic amplifier, the RF signal is transmitted via a coaxial line with approximately 10 dB of distributed attenuation to a room-temperature amplifier with a gain of approximately 75 dB for further power amplification. This results in an RF signal with a power level exceeding 0 dBm, which can be measured and controlled using relevant electronic equipment.

[0036] However, existing low-noise quantum amplifiers for the 4-8 GHz frequency band are relatively large, making it difficult to meet the high demands of multi-channel integration in quantum applications such as electronic measurement and control boards. During the research and development process, it was discovered that existing room-temperature quantum amplifiers are too large to be applied to micro-circuits with high integration requirements. Furthermore, the multi-stage circuit structures within existing amplifiers used for amplifying radio frequency signals are susceptible to interference, resulting in high internal noise and hindering the acquisition of high-quality amplified signals.

[0037] In view of this, embodiments of the present invention provide a superconducting quantum computing room-temperature amplifier, comprising: a Kovar metal cavity including multiple radio frequency isolation cavities and a power isolation cavity, wherein the multiple radio frequency isolation cavities are isolated from each other by partition walls and electrically connected via radio frequency transmission glass beads sintered in the partition walls; the power isolation cavity is spatially electromagnetically isolated from the multiple radio frequency isolation cavities in the vertical direction and is electrically connected to the multiple radio frequency isolation cavities in the vertical direction via multiple sintered power transmission glass beads; and a multi-stage radio frequency amplification module disposed within the multiple radio frequency isolation cavities, the multi-stage radio frequency amplification module including a multi-stage radio frequency amplification circuit for amplifying radio frequency signals. The signal undergoes multi-stage amplification to obtain and output the target RF signal, thereby improving the amplifier's gain and saturation power, and reducing the noise of RF signal transmission loss. A dual-layer power supply device and circuit are housed within a power isolation cavity, comprising a four-layer PCB board and dual-sided power supply devices. The four-layer PCB board is grounded and gold-plated around its perimeter, with the metal edges suspended and fixed to the inner wall of the power isolation cavity by soldering. The dual-sided power supply devices are distributed on the upper and lower sides of the four-layer PCB board. These devices supply power to the multi-stage RF amplifier circuit through multiple power transmission beads sintered through the four-layer PCB board and the bottom of multiple RF isolation cavities.

[0038] Figure 1A schematic diagram of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention is shown.

[0039] like Figure 1 As shown, a superconducting quantum computing room temperature amplifier may include a Kovar metal cavity, a multi-stage radio frequency amplification module, and a bifacial power supply device and circuit.

[0040] Specifically, the Kovar metal cavity may include multiple radio frequency isolation cavities 101 and power isolation cavities 102. The multiple radio frequency isolation cavities 101 are isolated from each other by partition walls and electrically connected via radio frequency transmission glass beads 103 sintered in the partition walls. The power isolation cavity 102 is spatially electromagnetically isolated from the multiple radio frequency isolation cavities 101 in the vertical direction and is electrically connected to the multiple radio frequency isolation cavities 101 in the vertical direction via multiple power transmission glass beads 104 sintered in the vertical direction.

[0041] The packaging shell of a superconducting quantum bit amplifier operating at room temperature can be constructed from a Kovar metal cavity. The Kovar metal cavity can be formed by two outer walls 105 extending along a first direction, multiple first partition walls 106 extending along the first direction, and a second partition wall 107 extending along a second direction perpendicular to the first direction. Thus, the multiple isolation cavities formed by the two outer walls 105, the multiple first partition walls 106, and the second partition walls 107 can serve as RF isolation cavities 101 for housing a multi-stage RF amplification module 108, and the isolation cavities formed by the two outer walls 105 and the second partition walls 107 can serve as power isolation cavities 102 for housing dual-layer power supply devices and circuits. The first direction can be perpendicular to the ground, and the second direction can be horizontal to the ground.

[0042] The thickness of the outer wall corresponding to the RF isolation cavity 101 is different from the thickness of the outer wall corresponding to the power isolation cavity 102. The thickness of the outer wall corresponding to the power isolation cavity 102 can be less than the thickness of the outer wall corresponding to the RF isolation cavity 101. Through the area with different thicknesses of the outer wall, a flange (boss) structure for mounting conductive adhesive to bond double-layer power devices and circuits can be formed in the power isolation cavity 102.

[0043] When constructing the outer wall of the Kovar metal cavity, the outer surfaces of the outer wall area corresponding to the power isolation cavity 102 and the outer wall area corresponding to the radio frequency isolation cavity 101 are flush. Due to the different thicknesses of different areas, the inner surface of the outer wall inside the power isolation cavity 102 is not flush.

[0044] The second partition wall 107, arranged laterally (i.e., in the second direction), can be used to isolate the RF isolation cavity 101 where the multi-stage RF amplifier module 108 is placed from the power isolation cavity 102 where the dual-layer power supply device and circuit are placed. The plurality of first partition walls 106, arranged longitudinally (i.e., in the first direction), can be used to spatially and electromagnetically isolate the plurality of RF isolation cavities 101 where the multi-stage RF amplifier module 108 is placed from each other.

[0045] Each first partition wall 106 can be sintered with an RF transmission glass bead 103. By combining the RF transmission glass beads 103, each RF isolation cavity 101 forms a closed space, preventing electromagnetic power interference between different RF isolation cavities 101 and thus avoiding impact on noise and temperature. The distance between the RF transmission glass bead 103 and the second partition wall 107 can be referenced to the distance between the RF amplifier circuit and the second partition wall 107. The RF transmission glass bead 103 can be used to transmit the signal amplified by the previous RF amplifier circuit to the next RF amplifier circuit while maintaining a 50-ohm match and minimal loss. The length of the outer conductors extending from the left and right sides of the RF transmission glass bead 103 can be the same as the thickness of the outer wall 105 and the partition wall.

[0046] The multi-stage RF amplifier module 108 can be set in multiple RF isolation cavities 101. The multi-stage RF amplifier module 108 includes a multi-stage RF amplifier circuit. The multi-stage RF amplifier circuit can be used to amplify the RF signal in multiple stages to obtain and output the target RF signal, so as to improve the gain and saturation power of the amplifier, while minimizing the increase in noise and maintaining extremely low self-noise.

[0047] Each stage of a multi-stage RF amplifier circuit can amplify the RF signal, and corresponding RF amplifier circuits can be stacked according to the amplification requirements. For example, if an amplification requirement of approximately 75dB is needed, a three-stage RF amplifier circuit can be used to amplify the RF signal.

[0048] The RF amplification module may include integrated RF amplification circuits, microstrip substrates, capacitors, inductors, microwave resistors, and other amplification devices. For example, a multi-stage RF amplification module may employ a three-stage gallium arsenide MMIC (Monolithic Microwave Integrated Circuit), Rogers 4350B microstrip substrates, ATC chip capacitors, chip spiral inductors, surface mount capacitors, and Vishay CH series ultra-wideband microwave resistors, among other amplification devices. These will not be elaborated upon further here; detailed RF amplification circuitry can be found in the description below.

[0049] The dual-layer power supply device and circuit can be set inside the power isolation cavity 102, including a four-layer PCB board 109 and a double-sided power supply device. The four-layer PCB board 109 is grounded and gold-plated around its perimeter. The metal edges are suspended and fixed to the inner wall of the power isolation cavity 102 by soldering, so as to be suspended inside the power isolation cavity 102. The double-sided power supply device is distributed on the upper and lower sides of the four-layer PCB board 109. The double-sided power supply device supplies power to the multi-stage RF amplifier circuit through multiple power transmission glass beads 104 sintered through the bottom of the four-layer PCB board and multiple RF isolation cavities 101.

[0050] The four-layer PCB board 109 can be a multi-layer circuit board with circuits arranged on both sides. Corresponding double-sided power supply devices can be arranged on both the top and bottom circuit boards. By arranging some double-sided power supply devices on one side of the four-layer PCB board 109 and arranging the other part on the other side of the four-layer PCB board 109, the size of the double-layer power supply devices and circuits used to power the multi-stage RF amplifier module 108 can be greatly reduced.

[0051] The four-layer PCB board 109 has half-hole metallization around its perimeter to improve the firmness of the fixation. Inside the power isolation cavity 102, the four-layer PCB board 109 can be fixed to the flange formed by the outer wall 105 of different thicknesses by soldering or adhesive H20E, thus eliminating the need for screws to fix it to the four-layer PCB board 109 which is equipped with double-sided power devices. This saves the space occupied by the double-layer power devices and circuits, thereby reducing the size of the superconducting quantum computing room temperature amplifier and giving it a significantly more compact feature.

[0052] Between the power isolation cavity 102 and multiple radio frequency isolation cavities 101, multiple power transmission glass beads 104 can be sintered through the second partition wall 107. After processing the input voltage, the double-sided power supply device and circuit generate an output voltage to power the multi-stage radio frequency amplification module 108. The output voltage is then supplied to each stage of the radio frequency amplification circuit via the power transmission glass beads 104 connected to each radio frequency isolation cavity 101 to maintain the normal operation of each stage of the radio frequency amplification circuit. The superconducting quantum computing room temperature amplifier may also include a first Kovar metal cover plate 110 laser-sealed and a second Kovar metal cover plate 111 parallel-sealed.

[0053] According to an embodiment of the present invention, the outer contour of the Kovar metal cavity is formed by the outer wall, and the partition wall divides the cavity into multiple electromagnetically isolated radio frequency (RF) isolation cavities, as well as separating the RF isolation cavities from the power isolation cavities. This rational design and division of the spatial area results in multiple electromagnetically isolated cavities, preventing electromagnetic power interference between different isolation cavities during operation and thus avoiding impacts on noise and temperature, resulting in an amplifier with a low-noise operating environment. It also provides the foundation for a highly sealed, compact, and "quiet" electromagnetic environment for this amplifier, which is extremely sensitive to external electromagnetic disturbances. This reduces decoherence sources introduced by the amplifier's own instability, helps maintain a longer coherence time for the qubits, ensures stable operation of the entire measurement link, improves the reproducibility of experimental results, and provides an excellent device environment to avoid self-oscillation and electromagnetic interference.

[0054] Further integration with RF transmission beads sintered within the partition wall allows for high-gain, high-saturation-power amplification of the RF signal through a multi-stage RF amplifier circuit in a closed and electromagnetically isolated environment, enabling faster recovery of weak read signals. This shortens the "dead time" between operations, improving measurement speed and data throughput, and accelerating experimental iterations and algorithm execution. The amplified RF signal is then transmitted to the next stage of the RF amplifier circuit via the RF transmission beads. The sealed space formed by the RF beads and the partition wall prevents electromagnetic interference or noise from other areas from affecting the amplifier circuit within the RF cavity, allowing the low-noise amplifier to maximize the signal-to-noise ratio in a closed environment, ensuring that the weak quantum signal is not drowned out by background noise during amplification. This translates to a lower error rate per measurement and more accurate reads, directly improving the fidelity of qubit state reads, which is fundamental for effective quantum error correction.

[0055] Furthermore, by employing a double-sided, dual-layer power supply device, which is positioned on both sides of a four-layer PCB, the size of both the power supply device and the amplifier is significantly reduced. This results in a highly compact amplifier, minimizing the risks of signal attenuation, phase delay, and external interference coupling introduced by long transmission lines, and facilitating integration with readout lines for multiple qubits. A power transmission bead penetrating the bottom of the RF chamber transmits the supply voltage generated by the double-sided power supply circuit to the RF amplification circuit. Improving the internal structural compactness of the superconducting quantum computing room temperature amplifier in a low-noise, high-gain, and high-saturation-power environment allows it to meet the high demands of multi-channel, board-based, and integrated measurement and control systems. This enhances the system's mechanical and thermal stability, making it more suitable for deployment in systems requiring strictly controlled environments. It also reduces the extreme requirements of the front-end cryogenic amplifier or optimizes the amplification link configuration, simplifying the complexity and thermal load management of cryogenic systems.

[0056] According to an embodiment of the present invention, when the multi-stage RF amplifier circuit is a three-stage RF amplifier circuit, the multi-stage RF amplifier circuit may include a first-stage RF amplifier circuit, a second-stage RF amplifier circuit, and a third-stage RF amplifier circuit.

[0057] According to an embodiment of the present invention, the first-stage radio frequency amplifier circuit can be disposed in the first radio frequency isolation cavity, including a first-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The first-stage gallium arsenide monolithic microwave integrated circuit and the microstrip line are disposed on the microstrip line substrate by a micro-assembly process, and the surface-mount capacitor is disposed on the microstrip line by a micro-assembly process. The first-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected by bonding wires to amplify the initial radio frequency signal to obtain a first-stage amplified radio frequency signal.

[0058] According to an embodiment of the present invention, the second-stage radio frequency amplifier circuit can be disposed in a second radio frequency isolation cavity, including a second-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The second-stage gallium arsenide monolithic microwave integrated circuit and the microstrip line are disposed on the microstrip line substrate through a micro-assembly process, and the surface-mount capacitor is disposed on the microstrip line through a micro-assembly process. The second-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected by bonding wires to amplify the first-stage amplified radio frequency signal transmitted via the radio frequency transmission glass bead to obtain a second-stage amplified radio frequency signal.

[0059] According to an embodiment of the present invention, the third-stage radio frequency amplifier circuit can be disposed within a third radio frequency isolation cavity, including a third-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, a surface-mount capacitor, a ceramic capacitor, a spiral inductor, and an ultra-wideband microwave resistor. The third-stage gallium arsenide monolithic microwave integrated circuit, the ceramic capacitor, and the microstrip line are disposed on the microstrip line substrate using a micro-assembly process. The surface-mount capacitor, the ultra-wideband microwave resistor, and the spiral inductor are disposed on the microstrip line using a micro-assembly process. The third-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, the microstrip line substrate, the surface-mount capacitor, the ceramic capacitor, the spiral inductor, and the ultra-wideband microwave resistor are interconnected by bonding wires to amplify the second-stage amplified radio frequency signal transmitted via the radio frequency transmission glass bead to obtain the target radio frequency signal.

[0060] Furthermore, each RF isolation cavity may also include milled bosses. The milled bosses are located at the bottom of the RF isolation cavity to allow the gallium arsenide monolithic microwave integrated circuits in the RF amplifier circuit to be respectively mounted on the milled bosses, ensuring that the RF chip and microstrip substrate circuit in each stage of the RF amplifier circuit maintain the same planar height. The RF amplifier circuit can be mounted at the bottom of the RF cavity and on the milled bosses using micro-assembly processes.

[0061] Milling bosses allows the RF amplifier circuit and microstrip substrate to be at the same height while also providing adequate heat dissipation. All components in the RF amplifier circuit can be interconnected using micro-assembly processes via bonding wires, thereby minimizing the space occupied by the RF amplifier circuit and enabling the amplifier to meet current requirements for miniaturization and high compactness.

[0062] For each stage of the RF amplifier circuit, a multi-layered circuit architecture can be adopted to further reduce the space occupied by the RF amplifier circuit and improve its integration. For example, the preferred operating requirements for a superconducting quantum computing room-temperature amplifier are low noise, high gain, and high saturation power. Based on these requirements, a multi-layered circuit board with milled bosses can be used to arrange noise-sensitive devices and high-power devices, as well as high-frequency signal devices (microstrip lines) and control signal devices (gain adjustment circuits) in the RF amplifier circuit in layers. Simultaneously, a heat dissipation layer can be added to dissipate heat from the RF amplifier circuit operating at room temperature, improving the thermal management performance of the superconducting quantum computing room-temperature amplifier.

[0063] Figure 2 A schematic diagram of a multi-stage radio frequency amplifier circuit according to an embodiment of the present invention is shown.

[0064] like Figure 2 As shown, Figure 2 A schematic diagram corresponding to a multi-stage RF amplifier circuit is shown. Figure 2 Taking a three-stage RF amplifier circuit as an example, the central rectangular area of ​​the first-stage RF amplifier circuit 201 can be a first-stage gallium arsenide monolithic microwave integrated circuit 204 powered by the target positive voltage; the central rectangular area of ​​the second-stage RF amplifier circuit 202 can be a second-stage gallium arsenide monolithic microwave integrated circuit 205 powered by the target positive voltage; and the central rectangular area of ​​the third-stage RF amplifier circuit 203 can be a third-stage gallium arsenide monolithic microwave integrated circuit 206 powered by both the target positive and target negative voltages. The white substrate area in the three-stage RF amplifier circuit can be a microstrip line substrate 207, and the two red lines located on the left and right sides of the gallium arsenide monolithic microwave integrated circuit and electrically connected to it can be microstrip lines 208. The circular areas in the first-stage RF amplifier circuit 201 and the second-stage RF amplifier circuit 202 can both be sintered through-hole power transmission glass beads 104; the two circular areas in the third-stage RF amplifier circuit 203 can be through-hole power transmission glass beads 104 used to transmit the target positive and target negative voltages, respectively. Figure 2 The diagram also shows other electronic components (capacitor C, inductor L, and resistor R), as well as the spacing between some of these components. However, these dimensions are not unique and can vary slightly within a reasonable range.

[0065] According to an embodiment of the present invention, based on the comprehensive design concept of hierarchical functional positioning, device characteristic adaptation, and structural anti-interference design, a three-stage RF amplifier circuit with different functional focuses can be used for an amplifier requiring 75dB. The first-stage RF amplifier circuit, which is electromagnetically isolated from each other, is interconnected through a first-stage gallium arsenide monolithic microwave integrated circuit, a surface-mount capacitor closely attached to the first-stage gallium arsenide monolithic microwave integrated circuit using micro-assembly technology, and related bonding wires, so that it can focus the low-noise effect of the amplifier.

[0066] The electromagnetically isolated second-stage RF amplifier circuits are interconnected via a second-stage gallium arsenide monolithic microwave integrated circuit and related bonding wires. This, combined with the amplification effect of each RF amplifier stage, focuses the gain amplification and drive of the RF signal in the amplifier. The electromagnetically isolated third-stage RF amplifier circuit is then interconnected via a third-stage gallium arsenide monolithic microwave integrated circuit, along with surface-mount capacitors, ceramic capacitors, spiral inductors, and related bonding wires mounted in close proximity to the third-stage gallium arsenide monolithic microwave integrated circuit using micro-assembly processes. This achieves high saturation power in the focused amplifier. By employing a three-stage RF amplifier circuit, impedance matching, isolation shielding, and process optimization are achieved synergistically, resulting in a high-gain, high-saturation-power, low-noise, compact superconducting quantum computing room-temperature amplifier.

[0067] According to embodiments of the present invention, multiple mutually sealed and isolated radio frequency isolation cavities are used to prevent high saturation power from being fed back to the input of the radio frequency signal via the isolation cavities. This satisfies the requirement that the multi-stage radio frequency amplifier circuit, with a saturation power >20dBm, does not affect the noise figure at the input and does not generate spatial feedback self-oscillation, resulting in an amplifier noise figure ≤0.9dB. By using 50-ohm matched radio frequency transmission beads sintered in the isolation walls, losses are reduced, resulting in a signal gain greater than 75dB.

[0068] The multi-stage RF amplifier circuit, configured in multiple RF isolation cavities, inputs the RF signal to the first-stage RF amplifier circuit. After amplification, the signal is transmitted to the next-stage RF amplifier circuit via a 50Ω RF transmission line. By progressively amplifying the RF signal through each stage of the RF amplifier circuit, a superconducting quantum computing room-temperature amplifier with outstanding performance—high saturation power, high gain, low noise, and an extremely compact design—can be obtained.

[0069] Figure 3 A schematic diagram of a radio frequency transmission glass bead and a power supply transmission glass bead in a circuit according to an embodiment of the present invention is shown.

[0070] like Figure 3As shown, in the superconducting quantum computing room temperature amplifier, the amplified radio frequency signal of each stage can be transmitted through the radio frequency transmission glass bead 103 sintered in the radio frequency isolation cavity, and the target positive voltage and target negative voltage can be provided to each stage of radio frequency amplification circuit through the power supply transmission glass bead 104 penetrating the bottom of the radio frequency isolation cavity.

[0071] Specifically, the bonding wire on one side of each cylindrical power transmission glass bead 104 penetrating the bottom of the RF isolation cavity is soldered to the positive and negative power pads in each stage of the gallium arsenide monolithic microwave integrated circuit in the multi-stage RF amplifier circuit. This allows the dual-layer power supply device and circuit to provide a target positive voltage to the multi-stage RF amplifier circuit through multiple power transmission glass beads 104 and gold wires, and to provide a target negative voltage for the modulation bias point to the third-stage RF amplifier circuit 203. The diameter of the power transmission glass bead is preferably 0.3 mm, and can be selected within a range of approximately 0.25 mm to 0.35 mm.

[0072] like Figure 3 As shown, for any stage of the RF amplifier circuit, a through-cylindrical power transmission glass bead 104 is sintered within a circular region. A bonding wire for transmitting the target positive or negative voltage generated by the dual-layer power supply device and circuit is bonded to the top surface of the power transmission glass bead 104. The bonding wire is then electrically connected to a capacitor C (e.g., a surface-mount capacitor) disposed on the microstrip substrate 207, utilizing the surface-mount capacitor for filtering. The surface-mount capacitor is then soldered to the power pin pads of the gallium arsenide monolithic microwave integrated circuit via the bonding wire in the RF amplifier circuit, thereby supplying power to the gallium arsenide monolithic microwave integrated circuit.

[0073] A microstrip line 208, electrically connected to the bonding wire on the output side of the cylindrical RF transmission glass bead 103, is soldered to the RF input pad of a gallium arsenide monolithic microwave integrated circuit. Similarly, a microstrip line 208, electrically connected to the bonding wire on the input side of the RF transmission glass bead 103, is soldered to the RF output pad of the gallium arsenide monolithic microwave integrated circuit. This allows adjacent RF amplifier stages to transmit amplified RF signals through the RF transmission glass bead 103 sintered in the partition wall. The RF transmission glass bead 103 has a resistance of 50 ohms.

[0074] like Figure 3As shown, for any stage of the RF amplifier circuit, a cylindrical RF transmission glass bead 103 sintered in the RF isolation cavity is soldered to the RF input pad of the gallium arsenide monolithic microwave integrated circuit via two bonding wires bonded to its top. This allows the RF signal from the previous stage to be transmitted to the gallium arsenide monolithic microwave integrated circuit in the next stage of the RF amplifier circuit. Then, through an electrical connection to the next cylindrical RF transmission glass bead 103 soldered to the RF output pad of the gallium arsenide monolithic microwave integrated circuit, the amplified signal after gain amplification is transmitted to the next stage of the RF amplifier circuit for gain amplification. By using two parallel bonding wires soldered to the RF input and RF output pads of the gallium arsenide monolithic microwave integrated circuit, the parasitic inductance and related loss impedance introduced into the RF amplifier circuit are reduced, thereby optimizing the amplifier's RF performance. This improves the power handling capacity of the multi-stage RF amplifier circuit while ensuring signal integrity, resulting in a compact amplifier with outstanding high gain, high saturation power, and low noise. Figure 3 Other electronic components (capacitor C, inductor L, and resistor R) are also shown.

[0075] According to embodiments of the present invention, a power transmission glass bead penetrating the bottom of the RF isolation cavity enables each stage of the RF amplifier circuit to stably receive the target voltage generated by the dual-layer power supply devices and circuits in a stable operating environment with low noise and low electromagnetic interference. Simultaneously, the combination of the sealed RF cavity and the RF transmission glass bead sintered within the RF isolation cavity prevents electromagnetic interference or noise from circuits in other spatial areas from affecting the amplifier circuits within the RF cavity, providing a closed and high signal-to-noise ratio operating environment for the RF circuits in each RF cavity. This achieves a design based on the separation of signal path and power supply path, ensuring low-loss, high-power transmission of the RF signal while maintaining the stability and purity of the power supply in a compact superconducting quantum computing room-temperature amplifier. This synergistically supports the core performance characteristics of the superconducting quantum computing room-temperature amplifier: high gain, high saturation power, low noise, and compact integration.

[0076] Figure 4 A schematic diagram of the transmission of glass beads according to an embodiment of the present invention is shown.

[0077] like Figure 4 As shown, the top cylindrical surface of the power transmission glass bead or radio frequency transmission glass bead has a diameter of 0.3 mm. The top surface of the power transmission glass bead or radio frequency transmission glass bead includes a gold wire bonding region 401 and a non-bonding region 402. The diameter of the gold wire bonding region 401 is 0.5 μm to 2 μm, and it is made of nickel or copper with a surface roughness Ra≤0.8 μm. The coating diameter of the non-bonding region 402 is 0.1 μm to 0.3 μm.

[0078] The diameter of the cylindrical RF transmission glass bead or power transmission glass bead can be 0.3 mm. However, if the diameter of the RF transmission glass bead or power transmission glass bead is too small, it may cause "chatter" during gold wire bonding. At the same time, the smaller the RF transmission glass bead or power transmission glass bead, the easier it is to miniaturize the amplifier structure. Therefore, it is necessary to process the top surface of the cylindrical RF transmission glass bead or power transmission glass bead to obtain a top surface structure including a gold wire bonding region 401 and a non-bonding region 402.

[0079] The diameter of the gold wire bonding area 401 (pad) can be 0.5~2μm. When it is necessary to use RF transmission glass beads to electrically connect with high-power or high-frequency devices, the diameter of the gold wire bonding area 401 (pad) can be 1~3μm. By precisely controlling the diameter of the gold wire bonding area 401, bonding failure caused by an unsuitable diameter can be avoided, which can lead to problems such as gold brittleness and thermal fatigue cracks.

[0080] After dividing the gold wire bonding region 401 and the non-bonding region 402, the surface of the gold wire bonding region 401 needs to be roughened so that the surface roughness Ra of the gold wire bonding region 401 is ≤0.8μm, and the thickness deviation of the entire gold wire bonding region is ≤±0.2μm, with no local thick spots / incomplete plating.

[0081] Meanwhile, the radio frequency transmission glass bead or the power supply transmission glass bead can also be a structure composed of an outer layer of glass 403 and an inner layer of a conductor 404 capable of transmitting signals or voltage. The signal is transmitted through the internal conductor structure, and then transmitted to the radio frequency amplifier circuit through the bonding wires at both ends. The bonding wires at both ends can be a single bonding wire or multiple bonding wires. The bonding wires can be bonded to the gold wire bonding region 401 via bonding balls 405, or they can be directly bonded to the gold wire bonding region 401 without using bonding balls 405.

[0082] For the power transmission glass bead supplying power to the final stage RF amplifier circuit, two power transmission glass beads can be used, one transmitting the target positive voltage and the other the target negative voltage. Alternatively, a multi-layer power input glass bead can be used. The innermost layer is a feed post conductor, then a cylindrical glass layer surrounds the feed post conductor, followed by a second layer of feed post conductors distributed on the cylindrical glass, and then another cylindrical glass layer surrounding the second layer of feed post conductors. Gold wires are then bonded around the two ends of the cylinder at different conductor layers. This constructs a dual-layer power input glass bead, which can simultaneously transmit the target positive and negative voltages to the final stage RF amplifier circuit through the two layers of feed post conductors.

[0083] According to embodiments of the present invention, by precisely controlling the diameter dimensions of the radio frequency transmission glass beads and the power supply transmission glass beads, a highly compact superconducting quantum computing room temperature amplifier structure is obtained without affecting signal transmission. Simultaneously, considering the technological difficulty of bonding gold wires to the top of extremely fine glass beads, the top surface of the glass beads is meticulously divided into gold wire bonding and non-bonding regions. Different materials and roughness grinding are used for different regions to avoid the high cost of overall thick plating in the non-bonding region, the risk of gold brittleness, and problems such as uneven stress and inconsistent gold ball deformation during gold wire bonding on the top surface. This improves the quality of the gold wire and the reliability of the transmission glass beads.

[0084] Figure 5 A schematic diagram of a double-sided power supply circuit in a double-layer power supply device and circuit according to an embodiment of the present invention is shown.

[0085] like Figure 5 As shown, a bifacial power supply circuit may include multiple positive output circuits, one positive and one negative output circuit, and a power input glass bead (the power input glass bead is not shown in the figure, and...). Figure 5 (Taking a three-positive-output circuit as an example).

[0086] Specifically, multiple positive output circuits may include multiple substrate low-screech capacitors and positive conversion units for stepping down the input voltage to obtain a target positive voltage that is supplied to the multi-stage RF amplifier circuit through multiple sintered positive power supply transmission glass beads.

[0087] The number of positive voltage output circuits corresponds to the number of multi-stage RF amplifier circuits. That is, each stage of the RF amplifier circuit needs to be connected to a target positive voltage, which drives the transistors, amplifiers, and other devices within each stage of the RF amplifier circuit to operate. The target positive voltage can be 5V.

[0088] The positive and negative output circuit can include multiple low-noise capacitors, multiple ceramic capacitors, multiple resistors, positive-to-negative conversion units, and negative-to-positive conversion units. It is used to process the input voltage from positive to negative to obtain the target negative voltage, and to provide the target negative voltage to the last stage of RF amplifier circuit by sintering the negative power supply transmission glass bead through the bottom of the last RF isolation cavity.

[0089] The target negative voltage converted by the positive and negative output circuits is usually only needed to supply the final stage of the RF amplifier circuit. This target negative voltage can range from -0.4V to -3.3V.

[0090] By powering all but the last stage of a multi-stage RF amplifier circuit using only the target positive voltage, the cost of components in other stages can be reduced. Low-noise amplification is the core objective of the first few stages. The target positive voltage is used to set the amplification bias point, allowing the RF amplifier circuit to amplify nV-level RF signals within the low-noise linear region. This simplifies circuit design and saves space in the RF chamber. The last stage is powered by both the target positive and negative voltages in a dual-supply mode. The target positive voltage drives the components, while the target negative voltage sets the bias point, thus expanding the linear operating region of the last stage. This allows for the integration of high-performance components within the RF amplifier circuit, enabling high-quality differential amplification of nV-level RF signals. This improves the signal-to-noise ratio while suppressing noise, resulting in a noise figure of 0.9dB and a saturation power greater than 20dB for the room-temperature quantum bit amplifier.

[0091] The power input glass bead can be sintered through the power isolation cavity. The first end of the power input glass bead is electrically connected to the input power supply, and the second end of the power input glass bead is electrically connected to multiple positive output circuits and positive and negative output circuits, which is used to transmit the input voltage to multiple positive output circuits and positive and negative output circuits.

[0092] The power input glass bead can have an internal conductor surrounded by a protective shell made of glass. Gold wires can be bonded to both the first and second ends of the power input glass bead, connecting it to the positive and negative output circuits to achieve voltage transmission. The conductor may include a feed post.

[0093] By using a power input glass bead, the voltage of the input power supply is transmitted to multiple corresponding positive and negative output circuits, which facilitates the conversion of the input voltage, saves internal space in the power supply chamber, and improves the neatness of the wiring.

[0094] Furthermore, for a four-layer PCB, double-sided power devices can be placed on the top and bottom PCBs, and the two middle PCBs can be power plane and ground plane layers respectively, so as to provide a complete power supply circuit for placing double-sided power devices on the top and bottom PCBs.

[0095] For double-sided power devices placed on both the top and bottom PCBs, the layout design can be based on the principles of shortest current paths, double-sided avoidance, and heat dissipation. For example, power input and output circuits can be placed closer to the PCB side to facilitate input or output voltage or current. For components prone to heat generation, they can be evenly distributed on both sides of the top and bottom PCBs to prevent heat concentration and potential PCB damage.

[0096] According to embodiments of the present invention, a bifacial power supply module may include multiple positive output circuits for providing positive power to each stage of the RF amplifier circuit, positive and negative output circuits for providing negative power to the last stage of the RF amplifier circuit, and a power input glass bead for receiving the input voltage. The power input glass bead transmits the input voltage provided by the external power supply to the multiple positive output circuits and the positive and negative output circuits. Then, the multiple positive output circuits supply power to the other stages of the RF amplifier circuits (excluding the last stage), allowing these other stages to preferentially amplify the RF signal under low noise conditions. Simultaneously, the positive and negative output circuits provide a dual positive and negative power supply to the last stage of the RF amplifier circuit, using a target negative voltage to set the bias point for the last stage, thereby improving the high saturation power of the RF amplifier circuit.

[0097] According to an embodiment of the present invention, multiple substrate low-noise capacitors in the positive output circuit are respectively disposed at the input and output terminals of the positive conversion unit for filtering and buffering the voltage; the positive conversion unit is used to step down the filtered and buffered input voltage to obtain a low-noise target positive voltage.

[0098] Specifically, the first substrate low-noise capacitor can be electrically connected to the input terminal of the positive voltage conversion unit to filter the input voltage and obtain a first filtered voltage. The output terminal of the positive voltage conversion unit can be electrically connected to the second substrate low-noise capacitor to perform voltage conversion on the first filtered voltage. The second substrate low-noise capacitor can be used to filter and buffer the converted voltage to obtain and output the target positive voltage.

[0099] Meanwhile, a resistor can be set in the corresponding positive output circuit to filter and buffer the input voltage and the converted voltage, thereby providing a low-noise target positive voltage to the RF amplifier circuit and reducing electromagnetic interference to other circuit structures.

[0100] The positive charge conversion unit can use a conventional positive charge conversion chip, such as the LDO LT3042 positive charge conversion chip. The substrate low-scream capacitor can use a conventional substrate low-scream capacitor, such as the Murata ZRB intercalation type substrate low-scream capacitor. The resistor can use a conventional resistor, such as the AVX glass interlayer FLEXITERM technology type resistor.

[0101] According to an embodiment of the present invention, multiple low-noise capacitors, multiple ceramic capacitors, and multiple resistors in the positive and negative output circuits are respectively disposed at the input and output terminals of the positive-to-negative conversion unit and the negative conversion unit, for filtering and buffering the voltage; the positive-to-negative conversion unit is electrically connected to the negative conversion unit and is used to perform positive-to-negative voltage conversion processing on the input voltage to obtain an intermediate negative voltage; the negative conversion unit is used to boost the intermediate negative voltage to obtain a target negative voltage, wherein the intermediate negative voltage is less than the target negative voltage.

[0102] Specifically, the input terminal of the positive-to-negative voltage conversion unit can be electrically connected to the input power supply, and the output terminal of the positive-to-negative voltage conversion unit is electrically connected to the negative voltage conversion unit. This is used to convert the input voltage from positive to negative to obtain an intermediate negative voltage. The positive-to-negative voltage conversion unit can be used to convert positive to negative, thereby converting positive voltage into negative voltage, so that the intermediate negative voltage obtained from the initial conversion can be further stepped down or stepped up using the negative voltage conversion unit. The intermediate negative voltage can be -3.3V.

[0103] The output of the negative voltage conversion unit can be electrically connected to a low-noise capacitor to perform voltage conversion on the intermediate negative voltage. The converted intermediate negative voltage is then filtered by the low-noise capacitor to obtain and output the target negative voltage. The negative voltage conversion unit can be used to boost the intermediate negative voltage. Combined with the low-noise capacitor, this provides the target negative voltage for modulating the bias point of the final stage RF amplifier circuit, thus providing a high-saturation-power operating environment for the final stage RF amplifier circuit. The target negative voltage can be -0.4V.

[0104] Ceramic capacitors can be configured at the input and output terminals of the positive-to-negative voltage conversion unit, as well as the output terminal of the negative voltage conversion unit, to filter and buffer the input and output voltages. The components and chips within both the positive-to-negative and negative voltage conversion units can be conventional. For example, the positive-to-negative voltage conversion unit can use a chip such as the ADP5073ACPZ-R7, the negative voltage conversion unit can use a chip such as the LDO LT3094, the low-noise capacitor can be a low-noise capacitor such as the GJ8, the ceramic capacitor can be a capacitor such as the GRM, and the resistor can be a resistor using AVX glass-laminated FLEXITERM technology.

[0105] According to embodiments of the present invention, through the corresponding positive and negative voltage conversion units, and the coordinated operation of capacitors and resistors, high-quality target positive and negative voltages can be provided for each stage of the RF amplifier circuit to reduce electromagnetic interference to adjacent circuits or the RF amplifier circuit. Simultaneously, the high-quality target negative voltage allows the final stage of the RF amplifier circuit to modulate its bias point according to the precise target negative voltage, thereby achieving a high-saturation-power amplification environment.

[0106] According to an embodiment of the present invention, a positive voltage conversion unit is used to step down the 6V input voltage to provide a target positive voltage of 5V to the multi-stage RF amplifier circuit; a positive-to-negative voltage conversion unit is used to convert the 6V input voltage from positive to negative to provide an intermediate negative voltage of -3.3V to the negative voltage conversion unit; and a negative voltage conversion unit is used to boost the intermediate negative voltage of -3.3V to provide a target negative voltage of -0.4V to the last stage RF amplifier circuit.

[0107] Figure 6a A schematic diagram of a conversion unit according to an embodiment of the present invention is shown. Figure 6b A schematic diagram of a conversion unit according to another embodiment of the present invention is shown. Figure 6c A schematic diagram of a conversion unit according to yet another embodiment of the present invention is shown.

[0108] like Figures 6a-6c As shown, Figures 6a-6c The diagram sequentially illustrates the positive voltage conversion unit, positive-to-negative voltage conversion unit, and negative voltage conversion unit used in a superconducting quantum computing room-temperature amplifier that amplifies radio frequency signals in three stages. An external power supply provides a 6V input voltage to the positive voltage conversion unit, which is filtered and buffered by an inductor L, a ceramic capacitor (C3), substrate low-squeak capacitors (C1, C2, C4), and flexible high-temperature resistors (R1, R2). The positive voltage conversion unit then converts the input voltage to output a target positive voltage of 5V.

[0109] An external power supply provides a 6V input voltage to the positive-to-negative voltage conversion unit. This input voltage is filtered and buffered by ceramic capacitors (C5, C7, C8, C9), low-noise capacitors (C6, C10), flexible high-temperature resistors (R3, R4, R5, R6, R7, R8, R9), inductor L, and diode D1. The positive-to-negative voltage conversion unit then converts the input voltage, outputting an intermediate negative voltage of -3.3V. This intermediate negative voltage is then input to the negative voltage conversion unit, where it is filtered and buffered by ceramic capacitor (C13), low-noise capacitors (C11, C14), substrate low-whistling capacitor (C12), flexible high-temperature resistors (R11, R12), and inductor L. Finally, this intermediate negative voltage is converted to output a target negative voltage of -0.4V.

[0110] in, Figure 6a In the positive charge conversion unit chip, IN1 can be represented as the first input pin, IN2 as the second input pin, EU / UV as the enable / lock pin, PG as the power status pin, ILIM as the current limit pin, OUT as the first output pin, OUTS as the output detection pin, FGFB as the feedback pin, SET as the setting pin, and GND1 and GND2 as the first ground pin and the second ground pin.

[0111] Figure 6b In the positive voltage conversion unit chip, EPAD can be represented as a pad pin, AVIN as an analog power input pin, PVIN as a power input pin, VREG as a voltage regulator pin, GND as a ground pin, VREF as a reference pin, SW as a switch pin, NIC#16, NIC#15, and NIC#14 as idle pins, SLEW as a slew rate pin, PWRGD as a power status indicator pin, SYNC / FREQ as a synchronization / frequency setting pin, SS as a soft-start pin, EN as an enable pin, COMP as a compensation pin, and FB as a feedback pin.

[0112] Figure 6cIn the positive charge conversion unit chip, IN1 can be represented as the first input pin, IN2 as the second input pin, IN3 as the third input pin, EU / UV as the enable / lock pin, PG as the power status pin, ILIM as the current limit pin, OUT as the first output pin, OUT_1 as the second output pin, OUTS as the output detection pin, FGFB as the feedback pin, SET as the setting pin, GND as the ground pin, and VIOC as the I / O (Input / Output) control pin.

[0113] According to an embodiment of the present invention, the length of the four-layer PCB board is 23.9-24.9 mm, the width of the four-layer PCB board is 7.0-8.0 mm, the length of the RF amplification module is 26.2-27.2 mm, the width of the RF amplification module is 15.9-16.9 mm, the height of the RF amplification module is 10.0-11.0 mm, and the diameter of the power transmission glass bead is 0.18-0.50 mm.

[0114] Specifically, the power supply circuit board is preferably 24.4 mm long and 7.5 mm wide, the RF amplifier module is preferably 26.7 mm long, 16.4 mm wide, and 10.5 mm high, and the power transmission glass bead is preferably 0.45 mm in diameter.

[0115] According to an embodiment of the present invention, the quantum bit amplifier may further include a radio frequency input terminal, a radio frequency output terminal, a radio frequency input glass bead, a radio frequency output glass bead, a first Kovar metal cover plate, and a second Kovar metal cover plate.

[0116] According to an embodiment of the present invention, the radio frequency input terminal is electrically connected to the first radio frequency isolation cavity among a plurality of radio frequency isolation cavities via a radio frequency input glass bead, for receiving and transmitting radio frequency signals to the first stage radio frequency amplifier circuit located in the first radio frequency isolation cavity.

[0117] According to an embodiment of the present invention, the RF output terminal is electrically connected to the last RF isolation cavity among a plurality of RF isolation cavities via an RF output glass bead, for outputting a target RF signal, wherein the RF input glass bead and the RF output glass bead are matched with the female SMA input / output of the external RF connector.

[0118] According to an embodiment of the present invention, a first Kovar metal cover plate is laser-sealed directly below the power isolation cavity to seal the power isolation cavity.

[0119] According to an embodiment of the present invention, a second Kovar metal cover plate is welded parallel to the top of the plurality of radio frequency isolation cavities to seal the plurality of radio frequency isolation cavities.

[0120] Both the RF input and RF output glass beads can be cylindrical, just like the RF transmission and power transmission glass beads. Gold wires are bonded to the two cylindrical end faces to facilitate the input or output of RF signals or amplified target RF signals.

[0121] The RF input glass bead can be sintered in the outer wall electrically connected to the first-stage RF amplifier circuit, while the RF output glass bead can be embedded in the outer wall on the other side, electrically connected to the last-stage RF amplifier circuit. One end of each RF input and output glass bead is located outside the RF cavity, and the other end is located inside the RF cavity. The distance between the RF input and output glass beads and the second partition wall can be referenced to the distance between the gallium arsenide monolithic microwave integrated circuit and the second partition wall. Through the RF input and output glass beads, the initial RF signal can be transmitted to the RF amplifier circuit or the target RF signal can be output without introducing additional interference noise.

[0122] Figure 7 A schematic diagram of a superconducting quantum computing room temperature amplifier according to another embodiment of the present invention is shown.

[0123] like Figure 7 As shown, Figure 7 The structure of a room-temperature quantum bit amplifier including a three-stage radio frequency amplification module is shown. The Kovar metal cavity can be composed of multiple outer walls 105, multiple first partition walls 106, and second partition walls 107. The radio frequency input glass bead 701 and the radio frequency output glass bead 702 are respectively disposed in the two outer walls 105. The two radio frequency transmission glass beads 103 are embedded in the two first partition walls 106. The power supply transmission glass bead 104 penetrates the power isolation cavity and the radio frequency isolation cavity (the power supply transmission glass bead does not penetrate the milled boss 703; the area penetrated by the power supply transmission glass bead 104 in the first and second radio frequency isolation cavities is located in front of the milled boss 703). The power supply input glass bead 704 is electrically connected to the double-layer power supply device and circuit. The dual-layer power supply device and circuitry can be glued to the flange (i.e., the lower surface of the double-sided power module corresponding to the dotted line) using conductive adhesive. The first Kovar metal cover plate 110 can be laser-welded directly below the power isolation cavity to seal the power cavity. The second Kovar metal cover plate 111 can be welded parallel to the top of multiple RF isolation cavities to seal the multiple RF isolation cavities. The thickness of the second Kovar metal cover plate 111 is not shown in the figure. Only one power transmission glass bead 104 penetrating the third RF cavity is shown in the figure; the other power transmission glass bead 104 penetrating the third RF cavity is not shown. Figure 7 The document also shows the spacing between some electronic components, but these dimensions are not unique and can vary slightly within a reasonable range.

[0124] Figure 8 The graphs showing the noise and gain test curves of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention are illustrated.

[0125] like Figure 8 As shown, the first curve represents the noise test curve, and the second curve represents the gain test curve. By amplifying radio frequency signals using the superconducting quantum computing room-temperature amplifier of this invention within the same 8GHz frequency band, it can be seen that the noise figure of the superconducting quantum computing room-temperature amplifier of this invention is maintained at approximately 0.882dB (≤0.9dB), exhibiting excellent low noise. Simultaneously, the gain of the superconducting quantum computing room-temperature amplifier of this invention is maintained at approximately 75.601dB (>75dB), demonstrating excellent radio frequency signal amplification. This proves that the superconducting quantum computing room-temperature amplifier of this invention can utilize microwave semiconductor micro-assembly technology to achieve a compact and miniaturized structural layout (meeting the requirements of increased qubit count and electronic iteration) while obtaining radio frequency signals with ultra-high gain, high saturation power, and low noise figure, which is higher than that of traditional low-noise amplifiers (typically 20~40dB). Room temperature must have ultra-high gain for the qubits to be amplified to a power level that can be read by the analog-to-digital converter circuit. Simultaneously, a low noise figure is required, introducing sufficiently low noise so that the analog-to-digital conversion circuit can acquire the quantum bit signal without being overwhelmed by noise. Here, Mkr5 can be represented as the 5th measurement marker point, Noise Figure can be represented as the noise figure, Scale / Div 0.100 dB can be represented as each scale division being 0.100 dB, Start 4.000 GHz can be represented as the starting frequency being 4.000 GHz, Stop 8.000 GHz can be represented as the ending frequency being 8.000 GHz, and Ref Value can be represented as the reference value.

[0126] Figure 9 A graph showing the 5HGz power curve of a superconducting quantum computing room temperature amplifier according to an embodiment of the present invention is shown.

[0127] like Figure 9As shown in the figure, the horizontal axis represents frequency, and the vertical axis represents power. It can be seen from the figure that during the amplification of radio frequency signals using the superconducting quantum computing room-temperature amplifier of this invention in the 5 GHz band, the saturation power can reach a maximum of 20.44 dBm (>20 dBm). This demonstrates that the superconducting quantum computing room-temperature amplifier of this invention, while maintaining a compact and miniaturized structural layout, achieves radio frequency signals with high gain, high saturation power, and low noise figure, while avoiding self-oscillation and electromagnetic interference. The high saturation power overcomes the problem of signal power saturation during superconducting quantum bit readout. Simultaneously, the excellent noise figure of 0.9 dB ensures minimal noise introduction during quantum bit readout, overcoming the vulnerability of quantum bit readout and improving quantum bit readout fidelity. Here, RBW can be represented as the resolution bandwidth.

[0128] Those skilled in the art will understand that the features described in the various embodiments of the present invention can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in the present invention. In particular, the features described in the various embodiments of the present invention can be combined and / or combined in various ways without departing from the spirit and teachings of the present invention. All such combinations and / or combinations fall within the scope of the present invention.

Claims

1. A superconducting quantum computing room-temperature amplifier, characterized in that, include: Kovar metal cavity includes multiple radio frequency isolation cavities and power isolation cavities. The multiple radio frequency isolation cavities are isolated from each other by partition walls and electrically connected via radio frequency transmission glass beads sintered in the partition walls. The power isolation cavities are spatially electromagnetically isolated from the multiple radio frequency isolation cavities in the vertical direction and are electrically connected to the multiple radio frequency isolation cavities in the vertical direction via multiple power transmission glass beads sintered in the vertical direction. A multi-stage radio frequency (RF) amplification module is disposed within the plurality of RF isolation cavities. The multi-stage RF amplification module includes a multi-stage RF amplification circuit, which is used to amplify the RF signal in multiple stages to obtain and output the target RF signal, thereby improving the amplifier's gain and saturation power and reducing the noise of the RF signal's transmission loss. A dual-layer power supply device and circuit are disposed within the power isolation cavity, comprising a four-layer PCB board and a double-sided power supply device. The four-layer PCB board is grounded and gold-plated around its perimeter, and the metal edges are suspended and fixed to the inner wall of the power isolation cavity by soldering, so as to be suspended inside the power isolation cavity. The double-sided power supply device is distributed on the upper and lower sides of the four-layer PCB board. The double-sided power supply device supplies power to the multi-stage RF amplifier circuit through multiple power transmission glass beads sintered through the bottom of the four-layer PCB board and the multiple RF isolation cavities.

2. The amplifier according to claim 1, characterized in that, When the multi-stage RF amplifier circuit is a three-stage RF amplifier circuit, the multi-stage RF amplifier circuit includes: The first-stage radio frequency amplifier circuit is located in the first radio frequency isolation cavity and includes a first-stage gallium arsenide monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The first-stage gallium arsenide monolithic microwave integrated circuit and the microstrip line are mounted on the microstrip line substrate through a micro-assembly process, and the surface-mount capacitor is mounted on the microstrip line through a micro-assembly process. The first-stage gallium arsenide monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected by bonding wires to amplify the initial radio frequency signal and obtain a first-stage amplified radio frequency signal. The second-stage radio frequency (RF) amplifier circuit, located within the second RF isolation cavity, includes a second-stage gallium arsenide (GaAs) monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, and a surface-mount capacitor. The second-stage GaAs monolithic microwave integrated circuit and the microstrip line are mounted on the microstrip line substrate using a micro-assembly process, and the surface-mount capacitor is mounted on the microstrip line using a micro-assembly process. The second-stage GaAs monolithic microwave integrated circuit, the microstrip line, and the surface-mount capacitor are interconnected via the bonding wire to amplify the first-stage amplified RF signal transmitted via the RF transmission glass bead, thereby obtaining a second-stage amplified RF signal. The third-stage radio frequency (RF) amplifier circuit, located within the third RF isolation cavity, includes a third-stage gallium arsenide (GaAs) monolithic microwave integrated circuit, a microstrip line, a microstrip line substrate, a surface-mount capacitor, a ceramic capacitor, a spiral inductor, and an ultra-wideband microwave resistor. The GaAs monolithic microwave integrated circuit, ceramic capacitor, and microstrip line are mounted on the microstrip line substrate using a micro-assembly process. The surface-mount capacitor, ultra-wideband microwave resistor, and spiral inductor are mounted on the microstrip line using a micro-assembly process. The GaAs monolithic microwave integrated circuit, microstrip line, microstrip line substrate, surface-mount capacitor, ceramic capacitor, spiral inductor, and ultra-wideband microwave resistor are interconnected via bonding wires to amplify the second-stage amplified RF signal transmitted via the RF transmission glass bead, thereby obtaining the target RF signal.

3. The amplifier according to claim 2, characterized in that, Multiple sealed and isolated radio frequency isolation cavities are used to prevent high saturation power from being transmitted back to the input of the radio frequency signal of the amplifier via space, which could cause self-oscillation and electromagnetic interference. Combined with 50-ohm radio frequency transmission glass beads sintered in the partition walls, the multi-stage radio frequency amplifier circuit can amplify the radio frequency signal at a high gain level of >75dB with a saturation power >20dBm and a noise figure ≤0.9dB.

4. The amplifier according to claim 3, characterized in that, Each cylindrical power transmission glass bead penetrating the bottom of the RF isolation cavity has a gold wire bonded to one side, which is soldered to the positive and negative power pads in each stage of the gallium arsenide monolithic microwave integrated circuit in the multi-stage RF amplifier circuit. This allows the dual-layer power device and circuit to provide a target positive voltage to the multi-stage RF amplifier circuit through the multiple power transmission glass beads and the bonding gold wire, and to provide a target negative voltage for the modulation bias point to the third-stage RF amplifier circuit. The diameter of the power transmission glass bead is 0.3 mm. Microstrip lines electrically connected to the bonding wires on the output side of the cylindrical RF transmission glass bead are soldered to the RF input pads of the gallium arsenide monolithic microwave integrated circuit. Microstrip lines electrically connected to the bonding wires on the input side of the RF transmission glass bead are soldered to the RF output pads of the gallium arsenide monolithic microwave integrated circuit, so that adjacent two-stage RF amplifier circuits transmit amplified RF signals through the RF transmission glass bead sintered in the partition wall. The resistance of the RF transmission glass bead is 50 ohms.

5. The amplifier according to claim 4, characterized in that, The top cylindrical surface of the power transmission glass bead or the radio frequency transmission glass bead, which has a cylindrical structure, has a diameter of 0.3 mm. The top surface of the power transmission glass bead or the radio frequency transmission glass bead includes a gold wire bonding region and a non-bonded region. The diameter of the gold wire bonding region is 0.5 μm to 2 μm, and it is made of nickel or copper with a surface roughness Ra ≤ 0.8 μm. The diameter of the coating in the non-bonded region is 0.1 μm to 0.3 μm.

6. The amplifier according to claim 1, characterized in that, The dual-layer power supply device and circuit include: Multiple positive output circuits, including multiple substrate low-noise capacitors and positive conversion units, are used to step down the input voltage to obtain a target positive voltage that is supplied to the multi-stage RF amplifier circuit through multiple positive power supply transmission glass beads that are sintered and connected. The positive and negative output circuit includes multiple low-noise capacitors, multiple ceramic capacitors, multiple resistors, a positive-to-negative conversion unit and a negative conversion unit, which are used to process the input voltage from positive to negative to obtain a target negative voltage, and provide the target negative voltage to the last stage radio frequency amplifier circuit by sintering a negative power supply transmission glass bead that runs through the bottom of the last radio frequency isolation cavity. A power input glass bead is sintered through the power isolation cavity. The first end of the power input glass bead is electrically connected to the input power supply, and the second end of the power input glass bead is electrically connected to the plurality of positive output circuits and the positive and negative output circuits, for transmitting the input voltage to the plurality of positive output circuits and the positive and negative output circuits.

7. The amplifier according to claim 6, characterized in that, The plurality of substrate low-noise capacitors in the positive output circuit are respectively set at the input and output terminals of the positive conversion unit for filtering and buffering the voltage. The positive voltage conversion unit is used to step down the filtered and buffered input voltage to obtain the target positive voltage with low noise. The plurality of low-noise capacitors, the plurality of ceramic capacitors, and the plurality of resistors in the positive and negative voltage output circuit are respectively disposed at the input and output terminals of the positive-to-negative voltage conversion unit and the negative voltage conversion unit, for filtering and buffering the voltage; the positive-to-negative voltage conversion unit is electrically connected to the negative voltage conversion unit and is used to perform positive-to-negative voltage conversion processing on the input voltage to obtain an intermediate negative voltage; the negative voltage conversion unit is used to boost the intermediate negative voltage to obtain the target negative voltage, wherein the intermediate negative voltage is less than the target negative voltage.

8. The amplifier according to claim 6, characterized in that, The positive voltage conversion unit is used to step down the 6V input voltage to provide a target positive voltage of 5V to the multi-stage RF amplifier circuit; the positive-to-negative voltage conversion unit is used to convert the 6V input voltage from positive to negative to provide an intermediate negative voltage of -3.3V to the negative voltage conversion unit; the negative voltage conversion unit is used to boost the intermediate negative voltage of -3.3V to provide a target negative voltage of -0.4V to the last stage RF amplifier circuit.

9. The amplifier according to claim 1, characterized in that, The length of the four-layer PCB board is 23.9-24.9mm, the width of the four-layer PCB board is 7.0-8.0mm, the length of the multi-stage RF amplification module is 26.2-27.2mm, the width of the multi-stage RF amplification module is 15.9-16.9mm, the height of the multi-stage RF amplification module is 10.0-11.0mm, and the diameter of the power supply transmission glass bead is 0.18-0.50mm.

10. The amplifier according to claim 1, characterized in that, The amplifier also includes: The radio frequency input terminal is electrically connected to the first radio frequency isolation cavity among the plurality of radio frequency isolation cavities through a radio frequency input glass bead, and is used to receive and transmit radio frequency signals to the first-stage radio frequency amplifier circuit located in the first radio frequency isolation cavity; The RF output terminal is electrically connected to the last RF isolation cavity among the plurality of RF isolation cavities via an RF output glass bead, and is used to output the target RF signal. The RF input glass bead and the RF output glass bead are matched with the female input and output of the external RF connector. A first Kovar metal cover plate is laser-sealed directly below the power isolation cavity to seal the power isolation cavity. A second Kovar metal cover plate is welded parallel to the top of the plurality of radio frequency isolation cavities to seal the plurality of radio frequency isolation cavities.

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