Perovskite solar cell module and activation method

Abstract

The invention discloses a perovskite solar cell module. The perovskite solar cell module comprises a NiP structure or a PiN structure, the NiP structure comprises a conductive substrate layer, an electron transport layer, a perovskite absorption layer, a passivation layer, a hole transport layer, a barrier layer and an electrode layer which are stacked in sequence; the PiN structure comprises a conductive substrate layer, a hole transport layer, a perovskite absorption layer, a passivation layer, an electron transport layer, a barrier layer and an electrode layer which are stacked in sequence; the perovskite absorption layer is prepared from a perovskite precursor, the structural formula of the perovskite precursor is CsxFA (1-x) PbIyBr (3-y), x is greater than or equal to 0 and less than or equal to 0.5, y is greater than or equal to 2 and less than or equal to 3, and the band gap of the perovskite precursor is 1.45-1.75 ev. The perovskite solar cell module has excellent cell efficiency and stability.

Description

Technical Field

[0001] This invention belongs to the field of perovskite battery technology, and specifically relates to a perovskite solar cell module and activation method. Background Technology

[0002] Since the discovery of perovskite solar cells in 2009, researchers have conducted extensive studies on perovskite solar cells with NiP and PiN structures. While scientists have conducted in-depth research on various perovskite systems, passivations, and functional layers, most studies have focused on cells or small components, such as those with dimensions of 1200*600mm. 2 There is very little research on large-scale components. As the perovskite grows from small to large, its efficiency decreases. In particular, after the components are fabricated into complete components, the chip efficiency and the component efficiency differ by 1%-2%. The specific structure of the component and the post-processing method have a significant impact on the final efficiency of the component. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes a perovskite solar cell module and activation method, which exhibits excellent cell efficiency and stability.

[0004] The above-mentioned technical objective of the present invention is achieved through the following technical solution: A perovskite solar cell module includes a NiP structure or a PiN structure; the NiP structure includes a conductive substrate layer, an electron transport layer, a perovskite absorber layer, a passivation layer, a hole transport layer, a blocking layer, and an electrode layer stacked sequentially; the PiN structure includes a conductive substrate layer, a hole transport layer, a perovskite absorber layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer stacked sequentially; the perovskite absorber layer is prepared from a perovskite precursor, and the perovskite precursor has the structural formula Cs. x FA （1-x） PbI y Br （3-y） Where 0≤x≤0.5, 2≤y≤3, and the band gap of the perovskite precursor is 1.45-1.75eV.

[0005] In some embodiments of the present invention, the band gap of the perovskite precursor is 1.5-1.6 eV.

[0006] In some embodiments of the present invention, the conductive substrate layer is TCO glass.

[0007] In some embodiments of the present invention, the material of the electron transport layer is C. 60 .

[0008] In some embodiments of the present invention, the passivation layer material is at least one of MgF2, PEAI, pipl and PEABr.

[0009] In some embodiments of the present invention, the barrier layer material is at least one selected from SnO2, Al2O3, SiO2, TiN, and TaN.

[0010] In some embodiments of the present invention, the hole transport layer is NiO. x membrane.

[0011] In some embodiments of the present invention, the material of the electrode layer is at least one selected from Ag, Au, Al, Mg, C, Cr, ITO, IZO and IWO.

[0012] In some embodiments of the present invention, an adhesive film layer and a backplate glass layer are further disposed on the electrode layer.

[0013] In some embodiments of the present invention, the material of the adhesive film layer is at least one of POE, EVA and EPE.

[0014] In some embodiments of the present invention, the I of the perovskite solar cell module sc ≥100mA, V oc ≥10V, I max ≥50mA, V max ≥5V. Isc refers to short-circuit current, Voc refers to open-circuit voltage, Imax refers to current at the maximum power point, and Vmax refers to current at the maximum power point.

[0015] A method for fabricating a perovskite solar cell module as described above includes the following steps: (1) An electron transport layer or hole transport layer is formed on the substrate, and P1 laser lines are etched; (2) Coating or inkjet printing a perovskite precursor on the electron transport layer or hole transport layer, and annealing to obtain a perovskite film, i.e., a perovskite layer. (3) A passivation layer material is coated or inkjet printed on the perovskite layer, and then annealed to obtain the passivation layer; (4) A hole transport layer or an electron transport layer is formed on the passivation layer; (5) A blocking layer is formed on the hole transport layer or electron transport layer, and P2 laser lines are etched; (6) An electrode layer is formed on the barrier layer, and P3 laser lines are etched; (7) Perform edge clearing to obtain the P4 edge clearing area.

[0016] In some embodiments of the present invention, the following steps are also included: (8) Apply butyl adhesive to the P4 edge cleaning area to form a butyl adhesive layer; (9) Apply adhesive film material to the area outside the P4 edge clearing area to form an adhesive film layer, then press the back glass onto the adhesive film layer to bond it with the adhesive film layer, and then press it to obtain the final product.

[0017] In some embodiments of the present invention, the butyl rubber layer is in the P4 edge cleaning area, the butyl rubber layer covers the P4 edge cleaning area, the adhesive film layer is on the same horizontal plane as the butyl rubber layer, the adhesive film layer covers the un-cleaned area, and the adhesive film layer is above the electrode layer, the backplate glass is above the plane composed of the butyl rubber layer and the adhesive film layer, and the P4 edge cleaning area and the remaining metal area after edge cleaning are below the butyl rubber and the adhesive film.

[0018] In some embodiments of the present invention, the thickness of the butyl rubber layer is greater than the thickness of the adhesive film layer, the sum of the thickness of the butyl rubber layer and the thickness of the adhesive film layer is greater than 0.5 mm, and the difference between the thickness of the butyl rubber layer and the thickness of the adhesive film layer is less than 0.2 mm.

[0019] In some embodiments of the present invention, the thickness of the butyl rubber layer is 0.5 mm, and the thickness of the adhesive film layer is 0.45 mm.

[0020] In some embodiments of the present invention, the thickness of the butyl rubber layer is 0.7 mm, and the thickness of the adhesive film layer is 0.6 mm.

[0021] In some embodiments of the present invention, the resistance across the P1 laser line is ≥1MΩ.

[0022] In some embodiments of the present invention, neither the P2 laser line nor the P3 laser line damages the substrate layer, and the P1 laser line, P2 laser line, and P3 laser line are parallel to each other, with a spacing of 10-40 μm between each pair.

[0023] In some embodiments of the present invention, the width of the P4 edge clearing region is ≥1mm, and the sheet resistance of the P4 edge clearing region is infinite.

[0024] In some embodiments of the present invention, in step (2), the perovskite precursor includes at least two of the following solvents: DMSO, DMF, NMP, GBL, and ACN.

[0025] In some embodiments of the present invention, the solvent in the perovskite precursor is obtained by mixing DMF and DMSO in a volume ratio of 4:1.

[0026] In some embodiments of the present invention, in step (2), the annealing is further performed by flash evaporation in VCD for 30-60 seconds.

[0027] In some embodiments of the present invention, in step (2), the perovskite precursor is flash-evaporated by VCD for 45-50 seconds before annealing, and the solvent in the perovskite precursor is removed by 40wt%-60wt% after flash evaporation.

[0028] In some embodiments of the present invention, in step (2), the annealing temperature is 100-180°C and the annealing time is 1-60 min.

[0029] In some embodiments of the present invention, in step (2), the annealing temperature is 120-150°C and the annealing time is 20-30 min.

[0030] In some embodiments of the present invention, in step (9), the pressing pressure is 10-100 kPa, the pressing time is 3-30 min, and the pressing temperature is 90-150 °C.

[0031] In some embodiments of the present invention, in step (9), the pressing pressure is 50-70 kPa, the pressing time is 10 min, and the pressing temperature is 120°C.

[0032] An activation method for a perovskite solar cell module as described above includes at least one of the following processing methods: applying an electric current to the perovskite solar cell module, applying an electrical bias voltage to the perovskite solar cell module, immersing the perovskite solar cell module in light, stimulating the perovskite solar cell module with heat, stimulating the perovskite solar cell module with water pressure, stimulating the perovskite solar cell module with salt water, and stimulating the perovskite solar cell module with microwaves.

[0033] In some embodiments of the present invention, the current stimulation applied to the perovskite solar cell module refers to applying a direct current or alternating current for a duration of 1 second to 2 hours, wherein the applied current I... 通电电流 =X*I sc Where X = 0.5-10, the I sc ≥100mA.

[0034] In some embodiments of the present invention, during the application of an electrical bias voltage to the perovskite solar cell module, the bias voltage is applied for a duration of 1 second to 10 hours, and the applied bias voltage U... 施加电压 =Y*V oc Where Y = 0.5-5, and V oc ≥10V.

[0035] In some embodiments of the present invention, the heating method for stimulating the perovskite solar cell module includes at least one of hot table heating, hot air heating and thermal radiation heating, wherein the heating temperature is 70-180°C and the heating time is 1s-2h.

[0036] In some embodiments of the present invention, the light immersion method for the perovskite solar cell module includes at least one of LED irradiation and sunlight irradiation. The ultraviolet band needs to be filtered out during the light immersion, and the light immersion time is 1 second to 5 hours.

[0037] In some embodiments of the present invention, the wavelength of the microwaves used to microwave stimulate the perovskite solar cell module is 400-800 nm, and the microwave stimulation time is 1 s-3 h.

[0038] The beneficial effects of this invention are: (1) The perovskite solar cell module of the present invention has excellent cell efficiency and stability; (2) The activation method of the present invention can significantly reduce the defects of perovskite solar cell modules and significantly improve the efficiency of the modules. Attached Figure Description

[0039] Figure 1 This is a side view of Embodiment 1 of the present invention; Figure 2 This is a simplified front view of Embodiment 1 of the present invention; Figure 3 This is a comparison test diagram of the component in Embodiment 1 of the present invention before and after activation.

[0040] Figure label: 100. Conductive substrate layer; 200. Hole transport layer; 300. Perovskite absorber layer; 400. Passivation layer; 500. Electron transport layer; 600. Barrier layer; 700. Electrode layer; 800. Butyl adhesive layer; 900. Adhesive film layer; 1000. Backplate glass layer; 001. P1 laser line; 002. P2 laser line; 003. P3 laser line; 004. P4 edge clearing area; 005. Busbar; 006. Conductor. Detailed Implementation

[0041] The present invention will be further described below with reference to specific embodiments.

[0042] Example 1: A titanium dioxide solar cell module, PiN structure, such as Figure 1 As shown ( Figure 1(Partial view) includes a conductive substrate layer 100, a hole transport layer 200, a perovskite absorber layer 300, a passivation layer 400, an electron transport layer 500, a barrier layer 600, an electrode layer 700, a butyl rubber layer 800, an encapsulant layer 900, and a backsheet glass layer 1000 stacked sequentially. The front of the perovskite solar cell module has multiple sets of laser lines, each set including a P1 laser line 001, a P2 laser line 002, and a P3 laser line 003. The P1 laser line 001 is located on the conductive substrate layer 100 and... Within the hole transport layer 200 (where laser lines etch continuous film layers into blocks), P2 laser lines 002 are positioned within the hole transport layer 200, perovskite absorber layer 300, passivation layer 400, electron transport layer 500, and blocking layer 600 (the laser lines etch these continuous film layers into blocks), and P3 laser lines 003 are positioned within the hole transport layer 200, perovskite absorber layer 300, passivation layer 400, electron transport layer 500, blocking layer 600, and electrode layer 700 (the laser lines etch these continuous film layers into blocks). For example... Figure 2 As shown, a horizontal P4 edge clearing area 004 is provided on one side of the top of the titanium ore solar cell module, and a horizontal busbar 005 is provided on the other side. At the same time, two busbars 005 are provided at the center of the top of the titanium ore solar cell module. Two vertical conductors 006 are provided on the top of the titanium ore solar cell module. The P4 edge clearing area 004 has no film layer, only glass. The conductors 006 are attached to the first and last laser-etched sub-cells. The busbars 005 lead out the current from the conductors. The laser lines divide the entire cell into multiple sub-cells, which can be connected in parallel or in series.

[0043] The perovskite absorber layer 300 is prepared from a perovskite precursor, the structural formula of which is Cs. 0.3 FA 0.7 PbI 2.5 Br 0.5 Where 0≤x≤0.5, 2≤y≤3, the band gap of the perovskite precursor is 1.55eV, the conductive substrate layer 100 is TCO glass, and the electron transport layer 500 is made of C. 60 The passivation layer 400 is made of phenylethyl iodide, the barrier layer 600 is made of SnO2, the hole transport layer 200 is a meo-pacz modified NiO film, the electrode layer 700 is made of Ag, the butyl adhesive layer 800 has a thickness of 0.5 mm, the adhesive film layer 900 has a thickness of 0.45 mm, and the adhesive film layer 900 is made of POE. The perovskite solar cell module's I... sc ≥100mA, V oc ≥10V, I max ≥50mA, V max ≥5V.

[0044] A method for fabricating a perovskite solar cell module as described above includes the following steps: (1) Sputter nickel oxide onto TCO glass, then anneal at 280°C for 1 h, then use meo-pacz to modify NiO to form hole transport layer 200, and scribing P1 laser line 001, the resistance on both sides of P1 laser line 001 is ≥1MΩ. (2) A perovskite precursor is coated on the hole transport layer 200. The perovskite precursor also contains a solvent, which is obtained by mixing DMF and DMSO in a volume ratio of 4:1. It is first treated by flash evaporation for 46s using a VCD. After flash evaporation, 50wt% of the solvent in the perovskite precursor is removed. Then, it is annealed at 150℃ for 20min to obtain a perovskite film, namely the perovskite layer 300. (3) Phenethyl amine iodide was coated on the perovskite layer 300, and then annealed at 100°C for 5 min to obtain the passivation layer 400. (4) C is deposited on the passivation layer 400 by vapor deposition. 60 Forming an electron transport layer 500; (5) A barrier layer 600 is prepared on the electron transport layer 500 using an RPD device, and P2 laser lines 002 are etched. (6) Silver is deposited on the barrier layer 600 to form an electrode layer 700, and P3 laser line 003 is etched. P2 laser line 002 and P3 laser line 003 do not damage the base layer. P1 laser line 001, P2 laser line 003 and P3 laser line 003 are parallel to each other, with a spacing of 20 μm between each pair. (7) The edge clearing forms the P4 edge clearing area 004, the width of the P4 edge clearing area 004 is 2mm, and the sheet resistance of the P4 edge clearing area 004 is infinite. (8) Apply butyl rubber to the cleaned area 004 to form a butyl rubber layer 800; (9) Apply POE material to the non-edge clearing area to form a film layer 900, then press the back glass onto the film layer 900 to bond it with the film layer 900, and press it at 120°C and 60 kPa for 10 minutes to obtain the final product.

[0045] An activation method for the aforementioned perovskite solar cell module specifically involves: applying a 2.5A current to the perovskite solar cell module for 3 minutes.

[0046] Example 2: A titanium dioxide solar cell module, identical to that in Example 1.

[0047] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0048] An activation method for the aforementioned perovskite solar cell module specifically involves: applying a 2A current to the perovskite solar cell module for 5 minutes.

[0049] Example 3: A titanium dioxide solar cell module, identical to that in Example 1.

[0050] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0051] An activation method for the aforementioned perovskite solar cell module specifically involves applying a voltage of 300V to the perovskite solar cell module for a bias duration of 2 minutes.

[0052] Example 4: A titanium dioxide solar cell module, identical to that in Example 1.

[0053] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0054] An activation method for the aforementioned perovskite solar cell module specifically involves placing the perovskite solar cell module under high-energy light such as non-ultraviolet light, with a light intensity of 2sum and a light immersion time of 20s.

[0055] Example 5: A titanium dioxide solar cell module, identical to that in Example 1.

[0056] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0057] An activation method for the aforementioned perovskite solar cell module specifically involves placing the perovskite solar cell module in a heating plate or thermal field at a temperature of 100°C for 1 hour.

[0058] Example 6: A titanium dioxide solar cell module, identical to that in Example 1.

[0059] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0060] An activation method for the aforementioned perovskite solar cell module specifically involves placing the perovskite solar cell module in high water pressure at a pressure of 20 MPa for 1 hour.

[0061] Example 7: A titanium dioxide solar cell module, identical to that in Example 1.

[0062] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0063] An activation method for the aforementioned perovskite solar cell module specifically involves placing the perovskite solar cell module in a 10wt% salt solution for 10 hours.

[0064] Example 8: A titanium dioxide solar cell module, identical to that in Example 1.

[0065] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0066] An activation method for the aforementioned perovskite solar cell module specifically involves placing the perovskite solar cell module in microwaves with a wavelength between 380nm and 800nm ​​for 20 minutes.

[0067] Example 9: A titanium dioxide solar cell module with a NiP structure is prepared in the same way as in Example 1, except that the hole transport layer 200 and the electron transport layer 500 are interchanged. The module includes a conductive substrate layer 100, an electron transport layer 500, a perovskite absorber layer 300, a passivation layer 400, a hole transport layer 200, a blocking layer 600, an electrode layer 700, a butyl adhesive layer 800, an adhesive film layer 900, and a backsheet glass layer 1000 stacked sequentially.

[0068] Example 10: A titanium dioxide solar cell module, identical to that in Example 1.

[0069] A method for preparing a perovskite solar cell module as described above is exactly the same as in Example 1.

[0070] An activation method for the above-mentioned perovskite solar cell module specifically involves placing the perovskite solar cell module in a combination of Examples 1-9 to achieve measures that increase module performance.

[0071] Test example: The efficiency and stability of the titanium dioxide solar cell modules of Examples 2-3 were tested respectively. The test results are shown in Table 1. The chip data and module data of the titanium dioxide solar cell module of Example 1 are statistically analyzed in the figure below. Figure 3 The chip data is obtained from testing before the component is activated, while the component data is the result of the activation stimulus mentioned above. (Refer to Table 1 and...) Figure 3 It can be seen that when the perovskite solar cell module is activated by the activation method of the present invention, the defects of the module are significantly reduced and the efficiency of the module is significantly improved.

[0072] Table 1.

[0073] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A perovskite solar cell module, characterized in that: Including NiP or PiN structures; The NiP structure includes a conductive substrate layer, an electron transport layer, a perovskite absorber layer, a passivation layer, a hole transport layer, a blocking layer, and an electrode layer stacked sequentially. The PiN structure includes a conductive substrate layer, a hole transport layer, a perovskite absorber layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer stacked sequentially. The perovskite absorber layer is prepared from a perovskite precursor, the structural formula of which is Cs. x FA （1-x） PbI y Br （3-y） , where 0≤x≤0.5, 2≤y≤3, and the band gap of the perovskite precursor is 1.45-1.75eV.

2. The perovskite solar cell module according to claim 1, characterized in that: The passivation layer material is at least one of MgF2, PEAI, pipl and PEABr.

3. The perovskite solar cell module according to claim 1, characterized in that: The barrier layer material is at least one of SnO2, Al2O3, SiO2, TiN, and TaN.

4. A perovskite solar cell module according to claim 1, characterized in that: The electrode layer is also provided with an adhesive film layer and a backing glass layer.

5. The perovskite solar cell module according to claim 4, wherein the material of the encapsulant layer is at least one of POE, EVA and EPE.

6. A perovskite solar cell module according to claim 1, characterized in that: The perovskite solar cell module I sc ≥100mA, V oc ≥10V, I max ≥50mA, V max ≥5V.

7. A method for preparing a perovskite solar cell module as described in any one of claims 1 to 6, characterized in that: Includes the following steps: (1) Form an electron transport layer or hole transport layer on the substrate and scribing P1 lines; (2) Coating or inkjet printing a perovskite precursor on the electron transport layer or hole transport layer, and annealing to obtain a perovskite film, i.e., a perovskite layer. (3) A passivation layer material is coated or inkjet printed on the perovskite layer, and then annealed to obtain the passivation layer; (4) A hole transport layer or an electron transport layer is formed on the passivation layer; (5) A blocking layer is formed on the hole layer or electron transport layer, and P2 laser lines are etched; (6) An electrode layer is formed on the barrier layer, and P3 laser lines are etched; (7) Perform edge clearing to obtain the P4 edge clearing area.

8. The method for preparing a perovskite solar cell module according to claim 7, characterized in that: It also includes the following steps: (8) Apply butyl adhesive to the P4 edge cleaning area to form a butyl adhesive layer; (9) Lay adhesive film material in the area outside the P4 edge clearing area to form an adhesive film layer, then press the back glass onto the adhesive film layer to bond it with the adhesive film layer, and then press it to obtain the final product.

9. In the method for preparing a perovskite solar cell module according to claim 8, in step (9), the pressing pressure is 10-100 kPa, the pressing time is 3-30 min, and the pressing temperature is 90-150 °C.

10. A method for activating a perovskite solar cell module as described in any one of claims 1 to 6, characterized in that: The process includes at least one of the following methods: applying an electric current to the perovskite solar cell module, applying an electrical bias voltage to the perovskite solar cell module, immersing the perovskite solar cell module in light, stimulating the perovskite solar cell module with heat, stimulating the perovskite solar cell module with water pressure, stimulating the perovskite solar cell module with salt water, or stimulating the perovskite solar cell module with microwaves.

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