High-efficiency heat dissipation HPD power module
By improving the heat dissipation component design, efficient heat dissipation of silicon carbide power modules was achieved, solving the problems of insufficient coolant flow and large temperature difference, and improving the reliability and lifespan of the devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHEJIANG CUIZHAN MICROELECTRONICS CO LTD
- Filing Date
- 2025-12-19
- Publication Date
- 2026-04-21
AI Technical Summary
Silicon carbide power modules generate a lot of heat when operating at high frequency and high power. Traditional liquid cooling designs suffer from insufficient turbulence in the coolant flow, large temperature differences, and localized overheating, leading to device performance degradation and decreased reliability.
The system employs a multi-layer heat dissipation component design, including an inlet flow channel, an outlet flow channel, and alternating inlet and outlet heat exchange channels. Combined with wave-shaped heat dissipation fins, it achieves uniform distribution of coolant and turbulent heat exchange, thereby improving heat dissipation efficiency.
It effectively alleviates the temperature difference between different areas of the module, improves cooling efficiency, avoids device performance degradation or thermal failure caused by local high temperature, and enhances the reliability and service life of the module.
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Figure CN121908884A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power module technology, and in particular to an HPD power module with high-efficiency heat dissipation. Background Technology
[0002] With the rapid development of power electronics technology, silicon carbide (SiC) power modules have been widely used in new energy vehicles, industrial frequency converters, and other fields due to their advantages such as high temperature resistance, high breakdown field strength, and low conduction loss. However, the high frequency and high power characteristics of silicon carbide devices generate a lot of heat during operation. If heat dissipation is not timely, the excessively high junction temperature of the module will lead to device performance degradation or even failure, seriously restricting its reliability and service life.
[0003] Existing silicon carbide power modules mostly adopt liquid cooling structures, but the heat dissipation design of traditional liquid cooling modules still has shortcomings: on the one hand, the coolant flow channels are mostly simple straight-through or conventional turbulence structures, resulting in insufficient turbulence generation during coolant flow and limited heat exchange efficiency with the heat dissipation substrate; on the other hand, as the coolant flows through the module, its temperature gradually increases due to continuous heat exchange, and its subsequent heat dissipation capacity decreases, resulting in temperature differences between the chips near the inlet and outlet. The coolant near the outlet has a higher temperature and lower flow rate, resulting in a significant decrease in heat exchange efficiency, which can easily cause uneven junction temperature in different areas of the module and prominent local overheating problems. Summary of the Invention
[0004] In view of this, the present invention provides an HPD power module with high-efficiency heat dissipation to solve the above-mentioned technical problems.
[0005] A high-efficiency heat dissipation HPD power module includes a heat dissipation assembly, multiple module components arranged on the heat dissipation assembly, and a housing on the module components. The heat dissipation assembly includes a first base plate, a second base plate disposed on the first base plate, a third base plate disposed on the second base plate, a heat dissipation substrate disposed on the base, and multiple heat dissipation fins vertically disposed on the heat dissipation substrate. The first base plate has at least one inlet and at least one outlet. The end face of the second base plate facing the first base plate has at least one liquid inlet channel and at least one liquid outlet channel. The inlet is connected to the liquid inlet channel, and the outlet is connected to the liquid outlet channel. The liquid inlet channel includes a main liquid inlet channel and multiple branch liquid inlet channels. One end of each branch liquid inlet channel is connected to the main liquid inlet channel, and the other end penetrates through the second base plate. The liquid outlet channel includes a main liquid outlet channel and multiple branch liquid outlet channels. One end of the liquid outlet channel is connected to the main liquid outlet channel, and the other end penetrates through the second base plate. At least one heat exchange zone is provided on the third base plate. The heat exchange zone is hollow and has multiple partitions spaced apart from each other. The partitions divide the heat exchange zone into multiple liquid inlet heat exchange channels and multiple liquid outlet heat exchange channels. The liquid inlet heat exchange channels and the liquid outlet heat exchange channels are arranged alternately. One end of the liquid inlet heat exchange channel is connected to the liquid inlet channel, and the other end is connected to the side wall of the heat exchange zone and closed. One end of the liquid outlet heat exchange channel is connected to the liquid outlet channel, and the other end is connected to the side wall of the heat exchange zone and closed. The bottom end of the partition is flush with the port of the heat exchange zone near the second base plate. The height of the partition is less than the depth of the heat exchange zone. The top end of the partition is spaced apart from the port of the heat exchange zone away from the second base plate. The heat dissipation substrate seals over the heat exchange zone. The heat dissipation fins are provided on the end face of the heat dissipation substrate facing the third base plate and are located within the heat exchange zone.
[0006] Furthermore, the inlet channel is located on one side of the upper bridge of the module assembly, so that the newly entered coolant preferentially flows through the heat dissipation fins corresponding to the upper bridge.
[0007] Furthermore, the end of the liquid inlet heat exchange channel that is connected to the liquid inlet channel and the end of the liquid outlet heat exchange channel that is connected to the liquid outlet channel are arranged opposite to each other.
[0008] Furthermore, the heat dissipation fins are plate-shaped and wavy, with one end of each heat dissipation fin connected to the heat dissipation substrate and the other end flush with it. The wavy direction of each heat dissipation fin is parallel to the arrangement direction of the multiple partitions.
[0009] Furthermore, the module assembly includes a ceramic insulating layer, a lower copper layer disposed on the ceramic insulating layer, an upper copper layer disposed on the ceramic insulating layer, a plurality of chips disposed on the upper copper layer, a plurality of power terminals disposed on the upper copper layer, a plurality of bonding copper busbars connecting the chips, a plurality of signal pins disposed on the upper copper layer, and a thermistor disposed on the upper copper layer.
[0010] Furthermore, the ceramic insulating layer is located between the upper copper layer and the lower copper layer, and the lower copper layer is located on the end face of the ceramic insulating layer facing the heat dissipation substrate and is welded to the heat dissipation substrate through a welding layer.
[0011] Furthermore, the power terminal has three terminals, namely a positive power terminal, a negative power terminal, and a three-phase terminal. One end of the power terminal is connected to the upper copper layer, and the other end is inserted into the housing. The negative power terminal and the positive power terminal are used for current outflow and inflow, respectively, and the three-phase terminal is used for three-phase current output.
[0012] Furthermore, the bonding copper busbar includes two parallel and spaced welding portions, a plurality of welding grooves disposed on the welding portions, and at least two vertical portions disposed vertically on the welding portions.
[0013] Furthermore, the welding portion is located above the chip and has a welding groove that fits the chip at the point where it passes through the chip. At least one end of the plurality of welding portions is connected to each other and connected to the upper copper layer. The two vertical portions are respectively located on one side of the two welding portions that are spaced apart from each other.
[0014] Furthermore, the outer casing is provided with a through hole, a plurality of reinforcing ribs separating the through hole, and a sealant filled in the through hole, the sealant being formed by curing a sealing material.
[0015] Compared with existing technologies, the high-efficiency heat dissipation HPD power module provided by this invention can evenly distribute coolant to the heat exchange zone of the third base plate through the inlet and outlet channels of the second base plate, avoiding pressure loss and uneven distribution caused by the concentrated influx of coolant into a single area. The third base plate is provided with three heat exchange zones, corresponding to the three phases of the three-phase circuit, realizing independent heat exchange for each phase. The inlet channel is located on the upper bridge side, and the low-temperature coolant preferentially flows through the higher-temperature upper bridge chip area, quickly removing concentrated heat, alleviating the thermal gradient difference between the upper and lower bridge chips, reducing the overall chip temperature difference, and avoiding device performance degradation or thermal failure caused by local high temperature. The partition in the heat exchange zone divides the flow channel into alternating inlet and outlet heat exchange channels, and the height of the partition is less than the depth of the heat exchange zone. After the coolant completes its initial heat absorption in the inlet heat exchange channel, it can pass through the top space of the partition plate, through the heat dissipation fins, and flow into the adjacent outlet heat exchange channel. The heat dissipation fins disrupt the laminar flow state of the coolant, inducing turbulence and eddies, thereby enhancing the mixing of heat and the efficiency of convective heat transfer within the coolant. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the structure of an HPD power module with high-efficiency heat dissipation provided by the present invention.
[0017] Figure 2 for Figure 1 An exploded view of the HPD power module with high-efficiency heat dissipation.
[0018] Figure 3 for Figure 1 Another exploded view of the HPD power module with high-efficiency heat dissipation.
[0019] Figure 4 for Figure 1 A schematic diagram of the module components of the high-efficiency heat dissipation HPD power module.
[0020] Figure 5 for Figure 1 A schematic diagram of the bonding copper busbar structure of the high-efficiency heat dissipation HPD power module.
[0021] Figure 6 for Figure 1 A side view of the ceramic insulation layer, lower copper layer, and upper copper layer of the HPD power module, which has high-efficiency heat dissipation.
[0022] Figure 7 for Figure 1 A cross-sectional view of the HPD power module with high-efficiency heat dissipation.
[0023] Figure Numbering Explanation: Heat dissipation assembly 10, First base plate 11, Inlet 111, Outlet 112, Second base plate 12, Liquid inlet channel 121, Liquid outlet channel 122, Main liquid inlet channel 123, Sub-channel liquid inlet 124, Main liquid outlet channel 125, Sub-channel liquid outlet 126, Third base plate 13, Heat exchange zone 131, Baffle 132, Liquid inlet heat exchange channel 133, Liquid outlet heat exchange channel 134, Heat dissipation substrate 14, Heat dissipation fins 15, Module assembly 20, Ceramic insulating layer 21, Lower copper layer 22, Upper copper layer 23, Chip 24, Power terminal 25, Bonding copper busbar 26, Soldering part 261, Soldering groove 262, Vertical part 263, Signal pin 27, Thermistor 28, Housing 30, Through hole 31, Reinforcing rib 32 Seal 33. Detailed Implementation
[0024] The following provides a more detailed description of specific embodiments of the present invention. It should be understood that the description of the embodiments of the present invention herein is not intended to limit the scope of protection of the present invention.
[0025] like Figures 1 to 7 The diagram shown is a structural schematic of the high-efficiency heat dissipation HPD power module provided by the present invention. The high-efficiency heat dissipation HPD power module includes a heat dissipation component 10, a plurality of module components 20 arranged on the heat dissipation component 10, and a housing 30 disposed on the module components 20. It is conceivable that the high-efficiency heat dissipation HPD power module also includes other functional modules, such as connection components and mounting components, etc., which are technologies well known to those skilled in the art and will not be described in detail here.
[0026] The heat dissipation assembly 10 includes a first base plate 11, a second base plate 12 disposed on the first base plate 11, a third base plate 13 disposed on the second base plate 12, a heat dissipation substrate 14 disposed on the base 11, and a plurality of heat dissipation fins 15 vertically disposed on the heat dissipation substrate 14.
[0027] The first base plate 11 is provided with at least one inlet 111 and at least one outlet 112.
[0028] The second base plate 12 is provided with at least one liquid inlet channel 121 and at least one liquid outlet channel 122 on the end face facing the first base plate 11. When the second base plate 12 and the first base plate 11 are assembled together, the first base plate 11 covers the liquid inlet channel 121 and the liquid outlet channel 122. The inlet 111 is connected to the liquid inlet channel 121, and the outlet 112 is connected to the liquid outlet channel 122 to form a channel for coolant flow.
[0029] The inlet channel 121 includes a main inlet channel 123 and multiple inlet branch channels 124. One end of each branch channel 124 is connected to the main inlet channel 123, and the other end penetrates the second base plate 12. The outlet channel 122 includes a main outlet channel 125 and multiple outlet branch channels 126. One end of each branch channel 126 is connected to the main outlet channel 125, and the other end penetrates the second base plate 12. The inlet branch channels 124 and outlet branch channels 126 are used to divert the coolant upon entry and to converge it upon exit, uniformly distributing the coolant within the third base plate 13 for heat exchange. This avoids pressure loss and uneven distribution caused by the concentrated influx of coolant into a single area, allowing the coolant to penetrate evenly into the heat exchange zone of the third base plate 13, laying the foundation for subsequent efficient heat exchange and ultimately improving the uniformity of heat exchange.
[0030] At least one heat exchange zone 131 is provided on the third base plate 13. Since the module assembly 20 is a three-phase power module with three phase transmission lines, three heat exchange zones 131 are provided in this embodiment, each corresponding to one of the three phases, so that each phase is configured with a separate heat exchange zone 131 to ensure the uniformity of heat exchange. At the same time, the upper bridge chip in the three-phase circuit has a higher temperature than the lower bridge due to its operating characteristics such as current density and switching losses, and the coolant temperature will rise with heat exchange, resulting in a decrease in heat exchange efficiency. The liquid inlet channel 121 is located on one side of the upper bridge of the module assembly 20, so that the coolant with a lower temperature that just enters will preferentially flow through the heat dissipation fins 15 corresponding to the upper bridge, thereby increasing the heat exchange efficiency of the coolant in this area, quickly removing the concentrated heat of the upper bridge chip, significantly alleviating the thermal gradient difference between it and the lower bridge chip, thereby reducing the overall chip temperature difference and avoiding the risk of device performance degradation or thermal failure due to local high temperature.
[0031] The heat exchange zone 131 is hollow and equipped with multiple spaced-apart partitions 132, which divide the heat exchange zone 131 into multiple liquid inlet heat exchange channels 133 and multiple liquid outlet heat exchange channels 134, which are alternately arranged. One end of the liquid inlet heat exchange channel 133 is connected to the liquid inlet channel 121, and the other end is connected to the side wall of the heat exchange zone 131, forming a closed structure, so that the coolant in the liquid inlet channel 121 enters the liquid inlet heat exchange channel 133 through the connecting end. One end of the liquid outlet heat exchange channel 134 is connected to the liquid outlet channel 122, and the other end is connected to the side wall of the heat exchange zone 131, forming a closed structure, so that the coolant in the liquid outlet heat exchange channel 134 enters the liquid outlet channel 122 through the connecting end. The end of the liquid inlet heat exchange channel 133 connected to the liquid inlet channel 121 and the end of the liquid outlet heat exchange channel 134 connected to the liquid outlet channel 122 are respectively located on both sides of the third base plate 13, thereby increasing the flow distance and improving the heat dissipation efficiency.
[0032] The bottom end of the partition 132 is flush with the port of the heat exchange zone 131 near the second base plate 12 and fits against the second base plate 12, thereby forming a groove structure. The height of the partition 132 is less than the depth of the heat exchange zone 131, so that the top end of the partition 132 is spaced apart from the port of the heat exchange zone 131 away from the second base plate 12. That is, in the direction of gravity, the partition 132 only occupies a part of the heat exchange zone 131, and the other part of the space is used to accommodate the heat dissipation fins 15 and allow the coolant to pass through. This way, when the coolant in the liquid inlet heat exchange channel 133 gradually increases and exceeds the partition 132, it will flow into the adjacent liquid outlet heat exchange channel 134 through the space at the top of the partition 132. After the coolant completes its initial heat absorption in the inlet heat exchange channel 133, it enters the top space through the opening at the top of the baffle 132 and flows laterally or obliquely to the adjacent outlet heat exchange channel 134. This arrangement of main channel diversion and alternating channels avoids the defects of gradient distribution of low temperature coolant at the inlet and high temperature coolant at the outlet in traditional straight channels, making the coolant inlet of each heat exchange unit in close contact with the outlet of the adjacent unit, thus reducing the temperature difference in the channel.
[0033] The heat dissipation substrate 14 is fixed to the third base plate 13 by fasteners and seals the heat exchange area 131. The heat dissipation fins 15 are disposed on the end face of the heat dissipation substrate 14 facing the third base plate 13. The heat dissipation fins 15 are located in the heat exchange area 131 and immersed in the coolant, thereby exchanging heat with the flowing coolant to remove heat from the chip. The heat dissipation fins 15 have a plate-like structure and are wavy. One end of each heat dissipation fin 15 is connected to the heat dissipation substrate 14, and the other end is flush with it. The wavy direction of each heat dissipation fin 15 is parallel to the arrangement direction of the multiple partitions 132. When the coolant flows through the opening at the top of the partition 132 into the adjacent outlet heat exchange channel 134, it also passes through the heat dissipation fins 15. During this process, the coolant is freed from the constraints of the narrow channel. Under the action of the heat dissipation fins 15 with wave amplitude, the coolant can be turbulent or eddyed during flow, and its flow state changes from laminar flow in the channel to turbulent flow. This allows coolants of different temperatures to mix with each other, and the heat of the coolant can be evenly diffused, thereby better removing the heat carried on the heat dissipation fins 15, and thus improving the cooling efficiency for the module component 20.
[0034] In this embodiment, there are three module components 20. The three module components 20 have the same structure, and each module component 20 includes a ceramic insulating layer 21, a lower copper layer 22 disposed on the ceramic insulating layer 21, an upper copper layer 23 disposed on the ceramic insulating layer 21, a plurality of chips 24 disposed on the upper copper layer 23, a plurality of power terminals 25 disposed on the upper copper layer 23, a plurality of bonding copper busbars 26 connected to the chips 24, a plurality of signal pins 27 disposed on the upper copper layer 23, and a thermistor 28 disposed on the upper copper layer 23.
[0035] The ceramic insulating layer 21 is located between the upper copper layer 23 and the lower copper layer 22. The lower copper layer 22 is located on the end face of the ceramic insulating layer 21 facing the heat dissipation substrate 14 and is soldered to the heat dissipation substrate 14 through a solder layer such as a tin-silver-copper solder layer, thereby transferring heat downward from the chip 24. The upper copper layer 23, located away from the heat dissipation substrate 14, is used to house various electronic components and has corresponding channels to divide the upper copper layer 23 into different regions as conductive layers.
[0036] The chips 24 are symmetrically distributed on the upper copper layer 23. In this embodiment, two chips 24 are provided on each of the upper and lower bridges of the module. The chips 24 are IGBT chips and FRD chips, which form a three-phase circuit after being connected. The chips 24 themselves should be existing technology, and their structure and working principle will not be described in detail here. The chips 24 are fixed on the upper copper layer 23 by sintering, and the sintering method should be existing technology, which will not be described in detail here.
[0037] The power terminal 25 has three terminals: a positive power terminal, a negative power terminal, and a three-phase terminal. One end of the power terminal 25 is connected to the upper copper layer 23, and the other end is inserted into the housing 30. The negative power terminal and the positive power terminal are used for current outflow and inflow, respectively, and the three-phase terminal is used for three-phase current output to realize the connection between the power module circuit and external electronic components.
[0038] The bonding copper busbar 26 is used to connect the chip 24 and the upper copper layer 23 to realize the connection of the circuit in the module assembly 20. The bonding copper busbar 26 includes two parallel and spaced welding portions 261, a plurality of welding grooves 262 provided on the welding portions 261, and at least two vertical portions 263 vertically provided on the welding portions 261.
[0039] The welding portion 261 has an elongated strip-shaped structure. Located above the chip 24, the welding portion 261 has a welding groove 262 that conforms to the chip 24. The number of welding grooves 262 matches the number of chips 24. The lower surface of the welding groove 262 is welded to the upper surface of the chip 24, thereby achieving a connection between the bonding copper busbar 26 and the chip 24, forming a stable electrical interface. This reduces the possibility of poor soldering or oxidation problems in traditional bonding methods, thus improving conductivity and circuit stability. At least one end of each welding portion 261 is interconnected and connected to the upper copper layer 23, so that two welding portions 261 form a whole, increasing the rigidity of the bonding point. Two vertical portions 263 are located on one side of the two welding portions 261, spaced apart from each other. The vertical portions 263, combined with potting compound, provide support or reinforcement, increasing the vibration resistance of the chip 24 and the welding groove 262. By replacing traditional bonding wires, the bonding copper busbar 26 effectively shortens the current loop path. Bonding wires are usually long and curved, which introduces high parasitic inductance. The bonding copper busbar 26 adopts an integral design, directly connecting the chip 24 and the upper copper layer 23, reducing the length and tortuosity of the conductive path, thereby reducing the parasitic inductance of the loop and reducing voltage spikes and energy loss during switching.
[0040] The signal pin 27 and the thermistor 28 are disposed on the upper copper layer 23. The signal pin 27 is used to connect with other electronic components and is responsible for transmitting non-power signals. The thermistor 28 is a sensitive element whose resistance value changes significantly with temperature. Both are key components in the power module to realize monitoring and protection functions. They should be existing technology and will not be described in detail here.
[0041] The outer casing 30 is provided with a through hole 31, a plurality of reinforcing ribs 32 separating the through hole 31, and a sealant 33 encapsulating the through hole 31.
[0042] The reinforcing ribs 32 are used to improve the strength of the outer shell 30 and to separate multiple module components 20 to avoid mutual interference. The outer shell 30 is used to support the various functional modules mentioned above. Therefore, the outer shell 30 is provided with various functional structures, such as screws, bolts, through holes, etc., to complete the installation and assembly of the above functional modules. These can be set according to actual needs and will not be described in detail here. The sealing element 33 is formed by curing a sealing material such as silicone gel, thereby sealing the gap between different power terminals and fixing their relative positions to achieve electrical isolation.
[0043] Compared with existing technologies, the high-efficiency heat dissipation HPD power module provided by the present invention can evenly distribute coolant to the heat exchange zone 131 of the third base plate 13 through the inlet channel 121 and the outlet channel 122 of the second base plate 12, avoiding pressure loss and uneven distribution caused by the concentrated influx of coolant into a single area. The third base plate 13 is provided with three heat exchange zones 131, corresponding to the three phases of the three-phase circuit, realizing independent heat exchange for each phase. The inlet channel 121 is located on the upper bridge side, and the low-temperature coolant preferentially flows through the higher temperature upper bridge chip area, quickly removing concentrated heat, alleviating the thermal gradient difference between the upper and lower bridge chips, reducing the overall chip temperature difference, and avoiding device performance degradation or thermal failure caused by local high temperature. The partition 132 in the heat exchange zone 131 divides the flow channel into alternating inlet heat exchange channel 133 and outlet heat exchange channel 134, and the height of the partition 132 is less than the depth of the heat exchange zone 131. After the coolant completes its initial heat absorption in the inlet heat exchange channel 133, it can pass through the top space of the partition 132, through the heat dissipation fins 15, and flow into the adjacent outlet heat exchange channel 134. The heat dissipation fins 15 disrupt the laminar flow state of the coolant, induce turbulence and eddies, and enhance the mixing of heat inside the coolant and the efficiency of convective heat transfer.
[0044] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions or improvements within the spirit of the present invention are covered within the scope of the claims of the present invention.
Claims
1. A high-efficiency heat dissipation HPD power module, characterized in that: The high-efficiency heat dissipation HPD power module includes a heat dissipation assembly, multiple module components arranged on the heat dissipation assembly, and a housing on the module components. The heat dissipation assembly includes a first base plate, a second base plate disposed on the first base plate, a third base plate disposed on the second base plate, a heat dissipation substrate disposed on the base, and multiple heat dissipation fins vertically disposed on the heat dissipation substrate. The first base plate has at least one inlet and at least one outlet. The end face of the second base plate facing the first base plate has at least one liquid inlet channel and at least one liquid outlet channel. The inlet is connected to the liquid inlet channel, and the outlet is connected to the liquid outlet channel. The liquid inlet channel includes a main liquid inlet channel and multiple branch liquid inlet channels. One end of each branch liquid inlet channel is connected to the main liquid inlet channel, and the other end penetrates through the second base plate. The liquid outlet channel includes a main liquid outlet channel and multiple branch liquid outlet channels. One end is connected to the main liquid outlet channel, and the other end penetrates through the second base plate. At least one heat exchange zone is provided on the third base plate. The heat exchange zone is hollow and has multiple partitions spaced apart from each other. The partitions divide the heat exchange zone into multiple liquid inlet heat exchange channels and multiple liquid outlet heat exchange channels. The liquid inlet heat exchange channels and the liquid outlet heat exchange channels are arranged alternately. One end of the liquid inlet heat exchange channel is connected to the liquid inlet channel, and the other end is connected to the side wall of the heat exchange zone and closed. One end of the liquid outlet heat exchange channel is connected to the liquid outlet channel, and the other end is connected to the side wall of the heat exchange zone and closed. The bottom end of the partition is flush with the port of the heat exchange zone near the second base plate. The height of the partition is less than the depth of the heat exchange zone. The top end of the partition is spaced apart from the port of the heat exchange zone away from the second base plate. The heat dissipation substrate seals over the heat exchange zone. The heat dissipation fins are provided on the end face of the heat dissipation substrate facing the third base plate and are located within the heat exchange zone.
2. The high-efficiency heat dissipation HPD power module as described in claim 1, characterized in that: The inlet channel is located on one side of the upper bridge of the module assembly, so that the coolant that has just entered will preferentially flow through the heat dissipation fins corresponding to the upper bridge.
3. The high-efficiency heat dissipation HPD power module as described in claim 1, characterized in that: The end of the liquid inlet heat exchange channel that is connected to the liquid inlet channel and the end of the liquid outlet heat exchange channel that is connected to the liquid outlet channel are arranged opposite to each other.
4. The high-efficiency heat dissipation HPD power module as described in claim 1, characterized in that: The heat dissipation fins are plate-shaped and wavy. One end of each heat dissipation fin is connected to the heat dissipation substrate, and the other end is flush with it. The wavy direction of each heat dissipation fin is parallel to the arrangement direction of the multiple partitions.
5. The high-efficiency heat dissipation HPD power module as described in claim 1, characterized in that: The module assembly includes a ceramic insulating layer, a lower copper layer disposed on the ceramic insulating layer, an upper copper layer disposed on the ceramic insulating layer, a plurality of chips disposed on the upper copper layer, a plurality of power terminals disposed on the upper copper layer, a plurality of bonding copper busbars connected to the chips, a plurality of signal pins disposed on the upper copper layer, and a thermistor disposed on the upper copper layer.
6. The high-efficiency heat dissipation HPD power module as described in claim 5, characterized in that: The ceramic insulating layer is located between the upper copper layer and the lower copper layer. The lower copper layer is located on the end face of the ceramic insulating layer facing the heat dissipation substrate and is welded to the heat dissipation substrate through a welding layer.
7. The high-efficiency heat dissipation HPD power module as described in claim 5, characterized in that: The power terminal has three terminals, namely a positive power terminal, a negative power terminal, and a three-phase terminal. One end of the power terminal is connected to the upper copper layer, and the other end is inserted into the housing. The negative power terminal and the positive power terminal are used for current outflow and inflow, respectively, and the three-phase terminal is used for three-phase current output.
8. The high-efficiency heat dissipation HPD power module as described in claim 5, characterized in that: The bonding copper busbar includes two parallel and spaced-apart welding portions, a plurality of welding grooves disposed on the welding portions, and at least two vertical portions disposed vertically on the welding portions.
9. The high-efficiency heat dissipation HPD power module as described in claim 8, characterized in that: The welding portion is located above the chip and has a welding groove that fits the chip. At least one end of the plurality of welding portions is connected to each other and connected to the upper copper layer. The two vertical portions are located on one side of the two welding portions that are spaced apart from each other.
10. The high-efficiency heat dissipation HPD power module as described in claim 1, characterized in that: The outer casing is provided with a through hole, a plurality of reinforcing ribs separating the through hole, and a sealant filled in the through hole, the sealant being formed by the curing of a sealing material.