Tactile sensor assembly

Abstract

A tactile sensor assembly is provided. The tactile sensor assembly comprises a tactile sensing structure, a circuit board, a semiconductor wafer and a connector, the tactile sensing structure comprises a tactile sensing micro-nano structure array, and the tactile sensing micro-nano structure array comprises a plurality of tactile sensing micro-nano structures; the touch sensing micro-nano structure deforms under the action of the force of the touch to be sensed on the touch sensing structure; a plurality of metal regions are formed on a top metal layer of the semiconductor wafer, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, and the electrode array comprises a plurality of electrodes; under the action of the force of the touch to be sensed on the touch sensing structure, one or more touch sensing micro-nano structures in the plurality of touch sensing micro-nano structures are deformed, so that the space shape between the deformed touch sensing micro-nano structure and the corresponding electrode or electrode group is changed; the connector is fixed on the circuit board, and the semiconductor wafer is electrically connected with the connector through the circuit board.

Description

Technical Field

[0001] This application relates to sensing technology, and more specifically, to the implementation of a tactile sensor assembly that can be used in the dexterous hand of a humanoid robot using an integrated circuit chip. Background Technology

[0002] Tactile sensation is the general term for the ability to perceive one or more mechanical stimuli such as contact, sliding, and pressure. In some cases, it is also desirable for tactile sensation to include the perception of temperature, proximity, and light. Therefore, tactile sensation in a narrow sense can refer only to the perception of force on a contact surface, while in a broad sense it includes the perception of physical characteristics or events such as pressure, sliding, contact, temperature, and proximity. Perceiving relative quantities without needing to perceive absolute values ​​is also a characteristic of tactile sensation. For example, tactile sensation requires sensing the contact between the skin and an external object (including the magnitude of pressure), but does not need to know the specific numerical value of the object acting on the skin. This requires tactile sensors to perceive changes in physical quantities without knowing their absolute values.

[0003] In most animals, tactile receptors are distributed throughout the body, like those on human skin, which are located on the surface of the body and spread throughout the entire body. For example, most parts of the skin can sense a prick from a needle, thanks to the dense distribution of tactile receptors. Different parts of the skin perceive different objects differently because the number and types of different tactile receptors vary.

[0004] The principles of tactile sensors mainly include resistance, capacitance, piezoelectricity, thermo-magnetic, magnetoelectric, force, light, ultrasound, and resistance strain.

[0005] A tactile sensor generally consists of two parts: sensing (also called perception) and information processing. The sensing part converts the physical quantity to be sensed into, for example, an electrical signal, while the information processing part processes the electrical signal to obtain the value of the physical quantity to be sensed. A tactile sensor may also include a communication unit and an actuator. The communication unit is used to exchange sensing results with external systems, receive external configurations or controls, and is used for networking to leverage distributed sensor technology to enhance sensing capabilities. The actuator generates corresponding actions based on the sensing results, such as driving fingers to grasp objects or avoid danger.

[0006] The "List of Tasks for Humanoid Robots" issued by the General Office of the Ministry of Industry and Information Technology in September 2023 (available at https: / / wap.miit.gov.cn / zwgk / zcwj / wjfb / tz / art / 2023 / art_b159eaaf51484ac79405c8bb7b70f591.html) proposed several tasks for bidding.

[0007] (1) "Force Sensor" Challenge: Addressing the need for accurate acquisition of tactile mechanical signals from drive joints and limb extremities in humanoid robots, this project aims to achieve breakthroughs in key technologies such as stable and reliable force sensor structural design and manufacturing, intelligent signal processing and analysis, and multi-information intelligent recognition and model analysis. It also aims to develop a series of high-performance, low-cost, and intelligent new force sensors; and to develop low-cost, large-scale sensor manufacturing methods to promote the industrial application of these new force sensors in humanoid robots. Expected Goals: By 2025, the design and manufacturing of a series of force sensors for humanoid robots will be completed, meeting the force measurement needs of drive joints, fingers, soles of feet, and other limb extremities, and enabling practical applications in humanoid robots. The sensors will adopt a low-cost, high-performance design, achieving an accuracy of 0.5%FS, a response time better than 0.03s, and intelligent information acquisition and processing capabilities, thereby enhancing the intelligence level of the force sensors.

[0008] (2) "MEMS Attitude Sensor" Challenge: Addressing the demand for high-performance, miniaturized attitude sensors for humanoid robot attitude control, this challenge aims to overcome key technologies such as miniaturized sensor structure design, high-precision gyroscope manufacturing processes, and intelligent response attitude calculation; develop high-performance attitude sensors based on MEMS inertial devices; research methods to reduce the size and weight of the sensing system, lower power consumption, and improve the sensor's resistance to vibration and jitter, as well as its transmission performance; develop low-cost, large-scale sensor manufacturing methods, and promote the industrial application of novel MEMS attitude sensors in humanoid robots. Expected Goals: By 2025, complete the development of a high-performance, low-cost MEMS attitude sensor with strong resistance to vibration and jitter, a static accuracy of 0.1° for pitch and roll angles, and a zero-bias stability (1σ, 10s smoothing) of no less than 0.3° / h. The MEMS attitude sensor will also possess strong robustness and intelligent stabilization algorithms.

[0009] (3) "Tactile Sensor" Challenge: Focusing on the capabilities of humanoid robots' dexterous hands in using tools, operating equipment, sorting items, and assembling with high precision, tactile sensors will be installed within the dexterous hand to perceive the pose, hardness, texture, and other characteristics of the target object, thereby improving the intelligent operation capabilities of the dexterous hand. The goal is to develop small-volume, highly reliable, and highly stable humanoid robot hand tactile sensors to meet the needs of humanoid robot dexterous hands in perception, operation, and interaction, improve the independent design and development level of new tactile sensors, and promote the industrial application of tactile sensors. Expected Goals: By 2025, the development of small-volume, highly reliable, and highly stable hand tactile sensors will be completed, achieving a sensor array density of 1mm×1mm (thickness ≤0.3mm) for the fingertips, finger pads, and palm; a force detection range of 0.1N / cm²~240N / cm² (10g / cm²~24kg / cm²) ±5%; and a minimum detection force of 10g.

[0010] For the task of developing tactile sensors, potential candidate technologies for tactile sensors in humanoid robot hands include MEMS pressure sensors, flexible tactile sensors, and six-dimensional force / torque sensors.

[0011] MEMS (Micro-Electro-Mechanical System) pressure sensors are high-precision sensors that integrate microelectronics and precision machining technologies. Their small size, high precision, and cost-effectiveness make them a potential competitor in the field of tactile sensors for humanoid robots. The article "Detailed Explanation of MEMS Pressure Sensors for Humanoid Robots: Robots May Open Up New Applications" introduces various MEMS mechanical sensors (from... https: / / www.sohu.com / a / 763634967_121838863 (Available). MEMS sensors rely on advanced microfabrication technology, resulting in high research and development and manufacturing costs.

[0012] A representative example of flexible tactile sensors is the TACTARRAY tactile pressure sensor (from...). https: / / pressureprofile.com / tactarray / conformable-tactarray (Available). It is supported by a soft conductive cloth and can directly capture the pressure distribution between two objects in direct contact. Due to the limitations of the conductive cloth material itself, its spatial resolution is at the millimeter level and is difficult to reduce further.

[0013] Six-dimensional force / torque sensors can accurately measure the absolute values ​​of forces in the X, Y, and Z directions and torques in the Fx, Fy, and Fz dimensions. Six-dimensional force / torque sensors typically require a complex loading and calibration process to achieve accurate force measurement across the entire measurement range. The manufacturing, deployment, and calibration processes for six-dimensional force / torque sensors are complex, resulting in high costs, ranging from several thousand to hundreds of thousands of yuan. They are usually deployed at critical locations requiring force measurement, such as the base, joints, and soles of the feet of robots.

[0014] Chinese patent application CN108362427A (A contact sensor with a multifunctional layer, electronic skin, and intelligent robot) discloses a tactile sensor based on a multifunctional layer, and achieves a single tactile sensor volume of 1 mm. 3 -100m 3 However, due to limitations in the linewidth and thickness of the printed circuit board carrying the sensor, the material thickness of the sensing capacitor's plates, and the package thickness, the thickness of a single sensor is insufficient to meet the measurement accuracy requirements of the task list.

[0015] Furthermore, providing electrical connection channels for each sensor unit when deploying a large number of sensor arrays within a limited space also presents a challenge. For example, deploying hundreds of sensor units within a 1 square centimeter area requires hundreds or even thousands of leads, and the arrangement, isolation, interference immunity, and selective connectivity of these leads all pose obstacles in engineering practice.

[0016] Chinese patent application CN103870817B (A Radio Frequency Microcapacitive Fingerprint Acquisition Chip and Acquisition Method) discloses a radio frequency microcapacitive fingerprint acquisition chip. Structurally, it uses the top metal layer of a wafer as the sensing electrode of a sensor capacitor, the user's finger as the other electrode of the sensor capacitor, and the internal metal layer of the wafer as the calibration electrode of a calibration capacitor, while the sensing electrode serves as the other electrode of the calibration capacitor. In terms of operation, it generates radio frequency signals to sequentially charge and discharge the sensing and calibration capacitors, thereby obtaining fingerprint texture information from the finger surface. However, the fingerprint acquisition chip's principle is based on detecting the difference in capacitance between the ridges and valleys of the fingerprint relative to the sensing electrode, making it unsuitable for sensing contact, the magnitude / direction of contact pressure, point contact (such as a pinprick), and unable to sense objects that are close but not in contact.

[0017] Chinese patent application CN112978671A (Force Measurement and Touch Sensing Integrated Circuit Device) discloses an integrated circuit device capable of simultaneously detecting touch and measuring applied force by simultaneously fabricating PMUT (Piezoelectric Micromechanical Ultrasonic Transducer) and PMEF (Piezoelectric Micromechanical Force Element) within a MEMS structure. The MEMS structure acts as the sensor module, while the integrated circuit chip handles analog-to-digital conversion and signal processing of the acquired signals. The MEMS structure and integrated circuit chip are stacked, each fulfilling its intended function. By stacking the MEMS structure and integrated circuit chip, the transmission distance of the analog signal between the sensor module and the signal processing circuit is reduced, thereby reducing interference and attenuation during analog signal transmission. However, the MEMS structure itself introduces high manufacturing costs. Furthermore, for multiple PMUTs and PMEFs in the sensor module, each requires corresponding electrodes to be connected to each channel of the integrated circuit crystal through inter-chip packaging. The channels also need to be insulated from each other, requiring extremely high packaging precision. The increased number of inter-chip signal transmission channels also reduces the overall reliability of the device, further increasing the packaging difficulty and cost.

[0018] Chinese patent application No. 202110957486.8 provides an analog signal router; Chinese patent application No. 202110956226.9 provides an analog signal router for cross-chip analog signal transmission; Chinese patent application No. 202110956246.6 provides an R-SpiNNaker chip; Chinese patent application No. 202110957228.X provides an R-SpiNNaker system; Chinese patent application No. 202110956273.3 provides a method for constructing a spiking neural network based on an R-SpiNNaker system; Chinese patent application No. 202110964601.4 provides a distributed capacitance sensor system; and Chinese patent application No. 202110957229.4 provides a distributed capacitance sensor system. Chinese patent applications 202210309501.2 and 202210309297.4 provide methods for event processing in neural network systems, respectively; 202210303160.8 provides a similar sensing system; 202210303165.0 provides a collaborative computing system; 202223551407.2 provides a tactile sensor, electronic skin, and pulse detection device; 202210320984.6 provides a collaborative computing system provided by a basic sensing unit; and 202210309298.9 provides a method for constructing a neural network system based on events. These Chinese patent applications provide signal processing and capacitance detection technologies for capacitive sensors, which serve as background technology for this application. The entire contents of these patent applications are incorporated herein by reference. Summary of the Invention

[0019] The aim is to provide a tactile sensor for humanoid robots that simultaneously achieves a sufficiently high sensor array density, is suitable for tactile perception of fingertips, fingertips, and / or palms, and can sense the pose, hardness, texture, and other characteristics of the target being manipulated. It should also be small in size, highly reliable, highly stable, and suitable for large-scale industrial production and application. The tactile sensor chip provided in this application aims to solve one or more of the above-mentioned technical problems.

[0020] According to a first aspect of this application, a tactile sensor chip is provided, comprising a semiconductor wafer and a tactile sensing structure as part of a package of the chip; the tactile sensing structure includes a tactile sensing micro / nanostructure array, the tactile sensing micro / nanostructure array comprising a plurality of tactile sensing micro / nanostructures; the tactile sensing micro / nanostructures deform under the force of a touch to be sensed; a top metal layer of the semiconductor wafer forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions serving as an electrode array, the electrode array comprising a plurality of electrodes; each of the plurality of electrodes corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; or every N electrodes of the plurality of electrodes form a group, each electrode group corresponding one-to-one with each of the plurality of tactile sensing micro / nanostructures, where N is a positive integer greater than or equal to 2; the plurality of metal regions of the top metal layer further include second metal regions not belonging to the plurality of first metal regions; Under the force of the touch to be sensed on the tactile sensing structure, one or more of the plurality of tactile sensing micro / nanostructures deform, causing a change in the spatial shape between the deformed tactile sensing micro / nanostructure and its corresponding electrode or electrode group; an electrical switch array and a circuit for measuring capacitance are formed within the MOS layer and multiple intermediate layers of the semiconductor wafer; the plurality of electrodes and the tactile sensing structure form a plurality of first capacitors, wherein each electrode of the plurality of electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance value of the plurality of first capacitors; the plurality of electrodes and the second metal region are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance; the chip package also includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame being used to support the semiconductor wafer, and the packaging substrate and / or the lead frame being provided with the pins of the chip.

[0021] According to the tactile sensor chip of the first aspect of this application, a first isolation layer is included between the top metal layer of the semiconductor wafer and the tactile sensing structure. The first isolation layer serves as the dielectric between the plates of the plurality of first capacitors. The projection of the first isolation layer in a first direction overlaps with the plurality of first metal regions, wherein the first direction is perpendicular to the main plane of the semiconductor wafer.

[0022] According to the tactile sensor chip of the first aspect of this application, a piezoelectric material film is included between the top metal layer of the semiconductor wafer and the tactile sensing structure, and the piezoelectric material film serves as the dielectric between the plates of the plurality of first capacitors.

[0023] According to the tactile sensor chip of the first aspect of this application, the piezoelectric material film includes a first surface and a second surface; the first surface of the piezoelectric material film faces the tactile sensing structure; the second surface of the piezoelectric material film faces the top metal layer; the second surface of the piezoelectric material film includes a plurality of charge sensing electrodes, and the plurality of charge sensing electrodes correspond one-to-one with the plurality of electrodes of the electrode array.

[0024] The tactile sensor chip according to the first aspect of this application further includes an adhesive film; the adhesive film adheres to the second surface of the piezoelectric material film and the top metal layer; the adhesive film includes a plurality of pores, and the plurality of pores of the adhesive film correspond one-to-one with the plurality of electrodes of the electrode array.

[0025] According to the tactile sensor chip of the first aspect of this application, there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array; the size of the gap depends on the thickness of the adhesive film.

[0026] According to the tactile sensor chip of the first aspect of this application, when a touch to be sensed is applied to the piezoelectric material film, the piezoelectric material film deforms such that at the location where the force is applied, the charge sensing electrode of the piezoelectric material film contacts and is electrically connected to its corresponding electrode.

[0027] According to the tactile sensor chip of the first aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the capacitance formed between the first surface of the piezoelectric material film and the charge sensing electrode and the capacitance formed between the charge sensing electrode and the electrodes of the plurality of electrodes are connected in series to form a first capacitor.

[0028] According to the tactile sensor chip of the first aspect of this application, if the charge sensing electrode of the piezoelectric material film is in contact with the electrode of the corresponding electrode array, the charge sensing electrode of the piezoelectric material film serves as one of the plates of a first capacitor.

[0029] According to the tactile sensor chip of the first aspect of this application, the first surface of the piezoelectric material film includes a surface electrode, which is electrically connected to the second metal region.

[0030] According to the tactile sensor chip of the first aspect of this application, the surface electrode includes one or more regions isolated from each other; the second metal region of the top metal layer includes a plurality of metal regions; each region of the surface electrode is electrically connected to one of the plurality of metal regions of the second metal region.

[0031] According to the tactile sensor chip of the first aspect of this application, a circuit for measuring voltage is further formed within the MOS layer and multiple intermediate layers of the semiconductor wafer; the switch array is further used to connect the multiple first metal regions to the circuit for measuring voltage.

[0032] According to the tactile sensor chip of the first aspect of this application, the switch array connects the plurality of first metal regions to the circuit for measuring voltage and the circuit for measuring capacitance in a time-division manner.

[0033] According to the tactile sensor chip of the first aspect of this application, the top metal layer, the switch array, the circuit for measuring capacitance, and the circuit for measuring voltage are manufactured on the semiconductor wafer using integrated circuit chip manufacturing processes.

[0034] According to the tactile sensor chip of the first aspect of this application, when a touch to be sensed acts on the piezoelectric material film, at the location where the force is applied, a first charge quantity corresponding to the force appears on the charge sensing electrode of the piezoelectric material film, and the circuit for measuring voltage is used to measure the first charge quantity.

[0035] According to the tactile sensor chip of the first aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the charge sensing electrode of the piezoelectric material film is not electrically connected to the circuit for measuring the voltage.

[0036] According to the tactile sensor chip of the first aspect of this application, the chip includes a second isolation layer covering the outside of the tactile sensing structure relative to the chip, for protecting the tactile sensing structure.

[0037] According to the tactile sensor chip of the first aspect of this application, the top metal layer further includes a plurality of third metal regions that do not belong to the plurality of first metal regions, and the plurality of third metal regions are connected to pins on the packaging substrate of the chip.

[0038] According to the tactile sensor chip of the first aspect of this application, the top metal layer of the semiconductor wafer is directly electrically connected to one or more of the plurality of intermediate layers through vias in the semiconductor wafer.

[0039] According to the tactile sensor chip of the first aspect of this application, there is no MEMS between the top metal layer and the plurality of intermediate layers.

[0040] According to the tactile sensor chip of the first aspect of this application, the second metal region is electrically connected to the tactile sensing structure.

[0041] According to the tactile sensor chip of the first aspect of this application, each of the plurality of electrodes is connected to the switch array through a via in the semiconductor wafer and one or more layers of the plurality of intermediate layers.

[0042] According to the tactile sensor chip of the first aspect of this application, each of the plurality of tactile sensing micro / nanostructures is electrically connected to each other through the tactile sensing structure; the second metal region of the top metal layer is electrically connected to the plurality of tactile sensing micro / nanostructures.

[0043] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes a first part and a second part; the second metal region of the top metal layer includes a plurality of metal regions; the first part is electrically connected to a portion of the plurality of metal regions of the second metal region, and the second part is electrically connected to another portion of the plurality of metal regions of the second metal region; there is no electrical connection between the first part and the second part.

[0044] According to the tactile sensor chip of the first aspect of this application, the first part and the second part respectively include non-overlapping portions of the plurality of tactile sensing micro / nano structures; or the first part includes the plurality of tactile sensing micro / nano structures, and the second part includes a conductive structure isolated from the plurality of tactile sensing micro / nano structures.

[0045] According to the tactile sensor chip of the first aspect of this application, the first portion and the second portion form a second capacitor, wherein the first portion and the second portion respectively serve as one of the two plates of the second capacitor; or the first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

[0046] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro / nano structures; there is no electrical connection between the multiple parts of the tactile sensing structure; the second metal region of the top metal layer includes multiple metal regions; the multiple parts of the tactile sensing structure are respectively electrically connected to one of the multiple metal regions.

[0047] According to the tactile sensor chip of the first aspect of this application, the plurality of tactile sensing micro-nano structures are located on the same plane and arranged in a two-dimensional structure including rows and columns.

[0048] According to the tactile sensor chip of the first aspect of this application, the tactile sensing micro / nano structure includes a first raised curved surface structure and a second raised curved surface structure opposite each other; the bottom surfaces of the first raised curved surface structure and the second raised curved surface structure are opposite each other.

[0049] According to the tactile sensor chip of the first aspect of this application, the bottom area of ​​the first raised curved structure is greater than the bottom area of ​​the second raised curved structure; and / or the first raised curved structure and / or the second raised curved structure are hollow.

[0050] According to the tactile sensor chip of the first aspect of this application, the surface of the first raised curved structure has a hollow structure, and the surface of the second raised curved structure does not have a hollow structure.

[0051] According to the tactile sensor chip of the first aspect of this application, the surface of the second raised curved structure abuts against the first isolation layer.

[0052] According to the tactile sensor chip of the first aspect of this application, the position of the surface of the second raised curved structure in contact with the first insulating layer is located at the geometric center of one electrode or a group of electrodes in the first direction.

[0053] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure further includes a flexible layer that covers the tactile sensing micro / nano structure array on the outside of the chip relative to the chip.

[0054] According to the tactile sensor chip of the first aspect of this application, the vertex of the surface of the first raised curved structure of each of the tactile sensing micro / nanostructures further includes a protrusion, the protrusion extending into the interior of the flexible layer, such that the deformation of the flexible layer under the force of the touch to be sensed on the tactile sensing structure causes the tactile sensing micro / nanostructure where the protrusion is located to deform through the protrusion.

[0055] According to the tactile sensor chip of the first aspect of this application, the deformation of the tactile sensing micro / nanostructure where the protrusion is located caused by the protrusion is related to the magnitude and / or direction of the force exerted by the touch on the tactile sensing structure by the touch to be sensed; or the deformation of the tactile sensing micro / nanostructure where the protrusion is located caused by the protrusion to the curved surface structure of the second ridge of the tactile sensing micro / nanostructure where the protrusion is located is such that the distances from the curved surface structure of the second ridge of the tactile sensing micro / nanostructure where the protrusion is located to the electrodes of the corresponding electrode group are not all the same.

[0056] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure further includes an association structure for connecting adjacent tactile sensing micro / nano structures; the association structure is conductive; the association structure includes multiple beams and multiple holes; wherein,

[0057] The plurality of beams are arranged in rows and columns, each of the plurality of beams extending in the plane of the tactile sensing micro / nanostructure array to connect adjacent tactile sensing micro / nanostructures; each of the plurality of beams is arched, the arch rising in the first direction; or each of the plurality of holes is arranged in rows and columns, each hole being surrounded by a group of beams among the plurality of beams, and each tactile sensing micro / nanostructure being surrounded by a group of holes among the plurality of holes.

[0058] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure is a titanium-containing metal.

[0059] According to the tactile sensor chip of the first aspect of this application, the tactile sensing micro / nano structure includes a first raised curved surface structure and a second raised curved surface structure; the bottom of the second raised curved surface structure is disposed on the top of the first raised curved surface structure.

[0060] According to the tactile sensor chip of the first aspect of this application, the bottom area of ​​the first raised curved structure is greater than the bottom area of ​​the second raised curved structure; and / or the first raised curved structure and / or the second raised curved structure are hollow.

[0061] According to the tactile sensor chip of the first aspect of this application, the top of the second raised curved structure abuts against the first isolation layer.

[0062] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure further includes an association structure for connecting adjacent tactile sensing micro / nano structures; the association structure is conductive; the association structure includes multiple beams and multiple holes; wherein the multiple beams are arranged in rows and columns, each of the multiple beams extends in the plane direction of the tactile sensing micro / nano structure array for connecting adjacent tactile sensing micro / nano structures; each of the multiple holes is arranged in rows and columns, each hole is surrounded by a group of beams from the multiple beams, and each tactile sensing micro / nano structure is surrounded by a group of holes from the multiple holes.

[0063] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure is conductive silicone.

[0064] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure further includes a flexible layer; the tactile sensing micro / nano structure includes a second raised curved surface structure; the flexible layer covers the tactile sensing micro / nano structure array on the outside of the chip relative to the chip; the flexible layer is attached to the bottom surface of the second raised curved surface structure; such that the deformation of the flexible layer under the force of the touch to be sensed on the tactile sensing structure causes one or more tactile sensing micro / nano structures at the deformation location to deform.

[0065] According to the tactile sensor chip of the first aspect of this application, the minimum spacing between adjacent electrode edges of the plurality of electrodes is 0.1-5 mm; and / or the number of electrodes of the plurality of electrodes is greater than or equal to 100.

[0066] According to the tactile sensor chip of the first aspect of this application, the plurality of electrodes and / or the second metal region are electrically connected to the switch array; or the plurality of electrodes and / or the second metal region are electrically connected to the input terminal of a semiconductor amplifier, and the output terminal of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer; or the plurality of electrodes and / or the second metal region are coupled to the input terminal of the semiconductor amplifier via an electric field, and the output terminal of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer.

[0067] According to the tactile sensor chip of the first aspect of this application, the semiconductor amplifier is a MOS transistor, and the input terminal of the semiconductor amplifier is the gate of the MOS transistor.

[0068] According to the tactile sensor chip of the first aspect of this application, the semiconductor amplifier is formed in the intermediate layer of the semiconductor wafer.

[0069] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes a first support portion; the first support portion of the tactile sensing structure is located around the tactile sensing micro / nano structure array, for abutting the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame, forming a space for accommodating the semiconductor wafer.

[0070] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes a second support portion; the second support portion of the tactile sensing structure includes a plurality of support units, the support units corresponding to the tactile sensing micro-nano structures of the plurality of tactile sensing micro-nano structures; each support unit abuts against the semiconductor wafer and limits the deformation range of the tactile sensing micro-nano structure corresponding thereto.

[0071] According to the tactile sensor chip of the first aspect of this application, the package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the tactile sensing micro / nano structure array.

[0072] According to the tactile sensor chip of the first aspect of this application, the projection of each tactile sensing micro / nanostructure in a first direction at least partially overlaps with the corresponding electrode or electrode group, wherein the first direction is perpendicular to the main plane of the semiconductor wafer.

[0073] According to the tactile sensor chip of the first aspect of this application, the projection of each tactile sensing micro / nanostructure in a first direction covers the corresponding electrode or electrode group; and / or the area of ​​each tactile sensing micro / nanostructure is larger than the corresponding electrode or electrode group.

[0074] According to the tactile sensor chip of the first aspect of this application, the area of ​​the charge sensing electrode of the piezoelectric material film is larger than that of the corresponding electrode array.

[0075] According to the first aspect of this application, a tactile sensor chip includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent; each of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor wafers form a group, and each electrode group corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures.

[0076] According to the tactile sensor chip of the first aspect of this application, a plurality of said semiconductor wafers are interconnected to transmit analog signals and / or digital signals.

[0077] According to the tactile sensor chip of the first aspect of this application, the projection of the tactile sensing structure in a first direction covers part or all of the plurality of semiconductor wafers.

[0078] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes a first part and a second part; the tactile sensor chip includes a first semiconductor wafer and a second semiconductor wafer.

[0079] According to the tactile sensor chip of the first aspect of this application, the projection of the first portion of the tactile sensing structure in a first direction at least partially overlaps with the projection of the first semiconductor wafer; the projection of the second portion of the tactile sensing structure in the first direction at least partially overlaps with the projection of the second semiconductor wafer.

[0080] According to the tactile sensor chip of the first aspect of this application, the first portion is electrically connected to the second metal region of the first semiconductor wafer, and the second portion is electrically connected to the second metal region of the second semiconductor wafer; there is no electrical connection between the first portion and the second portion.

[0081] According to the tactile sensor chip of the first aspect of this application, the first part and the second part respectively include non-overlapping portions of the plurality of tactile sensing micro / nano structures; or the first part includes the plurality of tactile sensing micro / nano structures, and the second part includes a conductive structure isolated from the plurality of tactile sensing micro / nano structures.

[0082] According to the tactile sensor chip of the first aspect of this application, the first portion and the second portion form a second capacitor, wherein the first portion and the second portion respectively serve as one of the two plates of the second capacitor; or

[0083] The first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

[0084] According to the tactile sensor chip of the first aspect of this application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro / nano structures; there is no electrical connection between the multiple parts of the tactile sensing structure; the tactile sensor chip includes multiple semiconductor wafers.

[0085] According to the tactile sensor chip of the first aspect of this application, the projection of each portion of the tactile sensing structure in a first direction at least partially overlaps with one of the plurality of semiconductor wafers.

[0086] According to a second aspect of this application, an electronic device is provided, including one or more tactile sensor chips according to a first aspect of this application.

[0087] According to a third aspect of this application, a tactile sensor chip is provided, comprising a plurality of semiconductor wafers and a tactile sensing structure as part of a package of the chip, wherein the plurality of semiconductor wafers are spatially adjacent; the tactile sensing structure includes a tactile sensing micro / nanostructure array, the tactile sensing micro / nanostructure array comprising a plurality of tactile sensing micro / nanostructures; the tactile sensing micro / nanostructures deform under the force of a touch to be sensed; the top metal layer of each of the plurality of semiconductor wafers forms a plurality of metal regions, and a plurality of first metal regions of the plurality of metal regions of each semiconductor wafer serve as... The electrode array comprises multiple electrodes; each electrode of the multiple electrodes of each of the multiple semiconductor wafers corresponds one-to-one with each of the multiple tactile sensing micro / nanostructures; or every N electrodes of the multiple electrodes of each of the multiple semiconductor wafers form a group, each electrode group corresponding one-to-one with each of the multiple tactile sensing micro / nanostructures, where N is a positive integer greater than or equal to 2; the multiple metal regions of the top metal layer of each of the multiple semiconductor wafers also include a second metal region that does not belong to the multiple first metal regions; the touch to be sensed is applied to the touch... Under the force of the tactile sensing structure, one or more of the plurality of tactile sensing micro / nanostructures deform, causing a change in the spatial shape between the deformed tactile sensing micro / nanostructure and its corresponding electrode or electrode group; an electrical switch array and a circuit for measuring capacitance are formed in the MOS layer and the plurality of intermediate layers of each of the plurality of semiconductor wafers; the plurality of electrodes of each of the plurality of semiconductor wafers and the tactile sensing structure form a plurality of first capacitors, wherein each electrode of the plurality of electrodes of each of the plurality of semiconductor wafers serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance of at least one of the plurality of semiconductor wafers is used to measure the capacitance value of the plurality of first capacitors; the plurality of electrodes of each of the plurality of semiconductor wafers and the second metal region are coupled to the switch array of their respective semiconductor wafers; the switch array of each of the plurality of semiconductor wafers is connected to the circuit for measuring capacitance of its respective semiconductor wafer; the chip package further includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame being used to support the plurality of semiconductor wafers, and the packaging substrate and / or the lead frame being provided with the pins of the chip.

[0088] According to the tactile sensor chip of the third aspect of this application, the plurality of semiconductor wafers are interconnected to transmit analog signals and / or digital signals.

[0089] According to the tactile sensor chip of the third aspect of this application, each of the plurality of semiconductor wafers includes an analog signal port for connecting to the analog signal ports of other semiconductor wafers in the plurality of semiconductor wafers and for transmitting analog signals between at least two of the plurality of semiconductor wafers.

[0090] According to the tactile sensor chip of the third aspect of this application, the projection of the tactile sensing structure in a first direction at least partially overlaps with the plurality of semiconductor wafers, wherein the first direction is perpendicular to the main plane of at least one of the plurality of semiconductor wafers; the projection of each tactile sensing micro / nano structure in the first direction at least partially overlaps with its corresponding electrode or electrode group.

[0091] According to a fourth aspect of this application, a package for a tactile sensor chip is provided, comprising a tactile sensing structure and a package housing; the tactile sensing structure includes a tactile sensing micro / nanostructure array, the tactile sensing micro / nanostructure array comprising a plurality of tactile sensing micro / nanostructures; under the force of a touch to be sensed on the tactile sensing structure, one or more of the plurality of tactile sensing micro / nanostructures deform; the tactile sensing structure is used for electrical coupling with a semiconductor wafer of the chip; the tactile sensing structure forms one of the plates of a plurality of first capacitors, wherein the capacitance value change of each of the plurality of first capacitors is used to characterize the touch to be sensed by the tactile sensor; the package housing includes an opening; the package housing covers the tactile sensing structure externally relative to the chip, the tactile sensing micro / nanostructure array is opposite to the opening and exposed through the opening, such that the package housing does not cover the tactile sensing micro / nanostructures; the package further includes a package substrate and / or a lead frame, the package substrate and / or the lead frame being used to carry the semiconductor wafer, the package substrate and / or the lead frame being provided with the pins of the chip.

[0092] According to the fourth aspect of this application, the packaging of the tactile sensor chip includes a first isolation layer between the top metal layer of the semiconductor wafer and the tactile sensing structure. The first isolation layer serves as the dielectric between the capacitor plates of the plurality of first capacitors, and the projection of the first isolation layer in a first direction overlaps with the plurality of first metal regions.

[0093] The package of the tactile sensor chip according to the fourth aspect of this application further includes a piezoelectric material film; the piezoelectric material film is located inside the tactile sensing structure relative to the package, and the piezoelectric material film serves as a dielectric between the capacitor plates of the plurality of first capacitors.

[0094] According to the fourth aspect of this application, a tactile sensor chip package includes a second isolation layer covering the outside of the tactile sensing structure relative to the package for protecting the tactile sensing structure.

[0095] According to the fourth aspect of this application, a tactile sensor chip package is provided, wherein each of the plurality of tactile sensing micro / nanostructures is electrically connected to each other through the tactile sensing structure.

[0096] According to the fourth aspect of this application, the tactile sensor chip package includes a first part and a second part; the first part and the second part are respectively used for electrical connection with the semiconductor wafer of the chip; there is no electrical connection between the first part and the second part.

[0097] According to the fourth aspect of this application, the packaging of a tactile sensor chip includes a first portion and a second portion that respectively include non-overlapping portions of the plurality of tactile sensing micro / nanostructures; or the first portion includes the plurality of tactile sensing micro / nanostructures, and the second portion includes a conductive structure isolated from the plurality of tactile sensing micro / nanostructures.

[0098] According to the fourth aspect of this application, the tactile sensor chip package includes a first portion and a second portion forming a second capacitor, wherein the first portion and the second portion respectively serve as one of the two plates of the second capacitor; or the first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

[0099] According to the fourth aspect of this application, the tactile sensor chip package includes a plurality of parts; the plurality of parts of the tactile sensing structure respectively include non-overlapping portions of the plurality of tactile sensing micro / nano structures; and there is no electrical connection between the plurality of parts of the tactile sensing structure.

[0100] According to the fourth aspect of this application, the tactile sensor chip package, wherein the plurality of tactile sensing micro / nano structures are located on the same plane and arranged in a two-dimensional structure including rows and columns.

[0101] According to the fourth aspect of this application, the tactile sensor chip package includes a first raised curved surface structure and a second raised curved surface structure facing each other; the bottom surfaces of the first raised curved surface structure and the second raised curved surface structure are opposite each other.

[0102] According to the fourth aspect of the present application, the bottom area of ​​the first raised curved structure is greater than the bottom area of ​​the second raised curved structure; and / or the first hemispherical structure and / or the second hemispherical structure are hollow.

[0103] According to the fourth aspect of the present application, the surface of the first raised curved structure has a hollow structure, and the surface of the second raised curved structure does not have a hollow structure.

[0104] According to the fourth aspect of this application, the surface of the tactile sensor chip package abuts against the first insulating layer.

[0105] According to the fourth aspect of this application, the tactile sensor chip package further includes a flexible layer that covers the tactile sensing micro / nano structure array on the outside of the chip relative to the chip.

[0106] According to the fourth aspect of the present application, the surface vertex of the curved structure of the first raised part of each of the tactile sensing micro / nanostructures further includes a protrusion that extends into the interior of the flexible layer, such that the deformation of the flexible layer under the force of the touch to be sensed on the tactile sensing structure causes the tactile sensing micro / nanostructure in which the protrusion is located to deform through the protrusion.

[0107] According to the fourth aspect of this application, the tactile sensor chip packaging is such that the deformation of the tactile sensing micro / nanostructure where the protrusion is located caused by the protrusion is related to the magnitude and / or direction of the force exerted by the touch on the tactile sensing structure by the touch to be sensed; or the deformation of the tactile sensing micro / nanostructure where the protrusion is located caused by the protrusion is such that the distance from the curved surface structure of the second ridge of the tactile sensing micro / nanostructure where the protrusion is located to the chip is not entirely the same.

[0108] According to the fourth aspect of the present application, the tactile sensor chip package further includes an association structure for connecting adjacent tactile sensing micro / nano structures; the association structure is conductive; the association structure includes multiple beams and multiple holes; wherein the multiple beams are arranged in rows and columns, each of the multiple beams extends in the plane direction of the tactile sensing micro / nano structure array for connecting adjacent tactile sensing micro / nano structures; each of the multiple beams is arched, the arch bulging in the first direction; or each of the multiple holes is arranged in rows and columns, each hole is surrounded by a group of beams among the multiple beams, and each tactile sensing micro / nano structure is surrounded by a group of holes among the multiple holes.

[0109] According to the fourth aspect of this application, the tactile sensor chip package, wherein the tactile sensing structure is a titanium-containing metal.

[0110] According to the tactile sensor chip package of the fourth aspect of this application, the tactile sensing micro / nano structure includes a first raised curved surface structure and a second raised curved surface structure; the bottom of the second raised curved surface structure is disposed at the top of the first raised curved surface structure; according to the tactile sensor chip package of the fourth aspect of this application, the bottom surface area of ​​the first raised curved surface structure is larger than the bottom surface area of ​​the second raised curved surface structure; and / or the first raised curved surface structure and / or the second raised curved surface structure are hollow.

[0111] According to the fourth aspect of this application, the package of a tactile sensor chip includes a top of a second raised curved structure abutting against the first insulating layer.

[0112] According to the fourth aspect of the present application, the tactile sensor chip package further includes an association structure for connecting adjacent tactile sensing micro / nano structures; the association structure is conductive; the association structure includes multiple beams and multiple holes; wherein the multiple beams are arranged in rows and columns, each of the multiple beams extends in the plane direction of the tactile sensing micro / nano structure array for connecting adjacent tactile sensing micro / nano structures; each of the multiple holes is arranged in rows and columns, each hole is surrounded by a group of beams from the multiple beams, and each tactile sensing micro / nano structure is surrounded by a group of holes from the multiple holes.

[0113] According to the fourth aspect of this application, the tactile sensor chip package, wherein the tactile sensing structure is conductive silicone.

[0114] According to the fourth aspect of this application, the tactile sensor chip package further includes a flexible layer;

[0115] The tactile sensing micro / nanostructure includes a second raised curved surface structure; the flexible layer is located on the outside of the tactile sensing structure relative to the encapsulation and covers the tactile sensing micro / nanostructure array; the flexible layer is attached to the bottom surface of the second raised curved surface structure; such that the deformation of the flexible layer under the force of the touch to be sensed on the tactile sensing structure causes one or more tactile sensing micro / nanostructures at the deformation location to deform.

[0116] According to the fourth aspect of this application, the tactile sensor chip package includes a first support portion; the first support portion of the tactile sensing structure is located around the tactile sensing micro / nano structure array, for abutting the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame, forming a space for accommodating the semiconductor wafer.

[0117] According to the fourth aspect of the present application, the tactile sensor chip package includes a second support portion; the second support portion of the tactile sensing structure includes a plurality of support units, each support unit corresponding one-to-one with each of the plurality of tactile sensing micro / nano structures; each support unit abuts against the semiconductor wafer and limits the deformation range of the corresponding tactile sensing micro / nano structure.

[0118] According to a fourth aspect of this application, a tactile sensor chip package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the tactile sensing micro / nano structure array.

[0119] According to the fourth aspect of this application, the tactile sensor chip package includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent; each of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor wafers form a group, and each electrode group corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures.

[0120] According to the fourth aspect of this application, a tactile sensor chip package is provided, wherein a plurality of said semiconductor wafers are interconnected to transmit analog signals and / or digital signals.

[0121] According to the fourth aspect of this application, the tactile sensor chip package is wherein the projection of the tactile sensing structure covers part or all of the plurality of semiconductor wafers.

[0122] According to the fourth aspect of this application, the tactile sensor chip package includes a first portion and a second portion; the tactile sensor chip includes a first semiconductor wafer and a second semiconductor wafer; the projection of the first portion of the tactile sensor structure at least partially overlaps with the first semiconductor wafer; and the projection of the second portion of the tactile sensor structure at least partially overlaps with the second semiconductor wafer.

[0123] According to the fourth aspect of this application, a tactile sensor chip package includes a plurality of said semiconductor wafers; the projection of each portion of the tactile sensing structure in a first direction at least partially overlaps with one of the plurality of said semiconductor wafers.

[0124] According to a fifth aspect of this application, a chip is provided, comprising a semiconductor wafer and one of the packages according to a first aspect of this application.

[0125] According to a sixth aspect of this application, a tactile sensor assembly is provided, including a tactile sensing structure, a circuit board, a semiconductor wafer, and a connector; the tactile sensing structure includes a tactile sensing micro / nanostructure array, the tactile sensing micro / nanostructure array including multiple tactile sensing micro / nanostructures; the tactile sensing micro / nanostructures deform under the force of a touch to be sensed; the top metal layer of the semiconductor wafer forms multiple metal regions, and multiple first metal regions of the multiple metal regions serve as an electrode array, the electrode array including multiple electrodes; each electrode of the multiple electrodes corresponds one-to-one with each tactile sensing micro / nanostructure of the multiple tactile sensing micro / nanostructures; or every N electrodes of the multiple electrodes form a group, each electrode group corresponding one-to-one with each tactile sensing micro / nanostructure of the multiple tactile sensing micro / nanostructures, where N is a positive integer greater than or equal to 2; the multiple metal regions of the top metal layer also include those not belonging to the multiple first metal regions. A second metal region of a metal region; under the force of the touch to be sensed on the tactile sensing structure, one or more of the plurality of tactile sensing micro / nanostructures deform, causing a change in the spatial shape between the deformed tactile sensing micro / nanostructure and its corresponding electrode or electrode group; an electrical switch array and a circuit for measuring capacitance are formed in the MOS layer and multiple intermediate layers of the semiconductor wafer; the plurality of electrodes and the tactile sensing structure form a plurality of first capacitors, wherein each electrode of the plurality of electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance value of the plurality of first capacitors; the plurality of electrodes and the second metal region are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance; the connector is fixed to the circuit board, and the semiconductor wafer is electrically connected to the connector through the circuit board.

[0126] According to a sixth aspect of this application, a tactile sensor assembly wherein the semiconductor wafer is fixed to the circuit board.

[0127] The tactile sensor assembly according to the sixth aspect of this application further includes a packaging substrate and / or a lead frame, the packaging substrate and / or lead frame being used to carry the semiconductor wafer, and the packaging substrate and / or lead frame being electrically connected to the circuit board.

[0128] According to the sixth aspect of this application, the tactile sensor assembly wherein the circuit board is a flexible circuit board.

[0129] According to a sixth aspect of this application, the tactile sensor assembly, wherein the tactile sensing structure includes a first support portion; the first support portion of the tactile sensing structure is located around the tactile sensing micro / nano structure array, for abutting against the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame, forming a space for accommodating the semiconductor wafer.

[0130] According to a sixth aspect of this application, the tactile sensor assembly, wherein the tactile sensing structure includes a second support portion; the second support portion of the tactile sensing structure includes a plurality of support units, each support unit corresponding one-to-one with each of the plurality of tactile sensing micro / nanostructures; each support unit abuts against the semiconductor wafer and limits the deformation range of the corresponding tactile sensing micro / nanostructure.

[0131] According to a sixth aspect of this application, a tactile sensor assembly is provided, wherein the package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the array of tactile sensing micro / nano structures.

[0132] According to the tactile sensor assembly of the sixth aspect of this application, wherein the projection of each tactile sensing micro / nanostructure in a first direction covers the corresponding electrode or electrode group thereon; and / or the area of ​​each tactile sensing micro / nanostructure is larger than the corresponding electrode or electrode group thereon.

[0133] According to a sixth aspect of this application, a tactile sensor assembly includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent; each of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor wafers form a group, and each electrode group corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures.

[0134] According to a sixth aspect of this application, a tactile sensor assembly wherein a plurality of said semiconductor wafers are interconnected to transmit analog signals and / or digital signals.

[0135] According to a sixth aspect of this application, the tactile sensor assembly includes a first portion and a second portion; the plurality of semiconductor wafers include a first semiconductor wafer and a second semiconductor wafer.

[0136] According to a sixth aspect of this application, a tactile sensor assembly is wherein the first portion is electrically connected to a second metal region of a first semiconductor wafer, and the second portion is electrically connected to a second metal region of a second semiconductor wafer; there is no electrical connection between the first portion and the second portion.

[0137] According to a sixth aspect of this application, a tactile sensor assembly wherein the first portion and the second portion respectively include non-overlapping portions of the plurality of tactile sensing micro / nanostructures; or the first portion includes the plurality of tactile sensing micro / nanostructures, and the second portion includes a conductive structure isolated from the plurality of tactile sensing micro / nanostructures.

[0138] According to a tactile sensor assembly of a sixth aspect of this application, the first portion and the second portion form a second capacitor, wherein the first portion and the second portion respectively serve as one of the two plates of the second capacitor; or the first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

[0139] According to a sixth aspect of this application, the tactile sensor assembly wherein the tactile sensing structure comprises a plurality of parts; the plurality of parts of the tactile sensing structure respectively include non-overlapping portions of the plurality of tactile sensing micro / nano structures; and there is no electrical connection between the plurality of parts of the tactile sensing structure.

[0140] A tactile sensor chip according to a seventh aspect of this application includes a semiconductor wafer and a piezoelectric material film as part of a package of the chip; the piezoelectric material film deforms under the force of a touch to be sensed; the piezoelectric material film includes a first surface and a second surface; the first surface of the piezoelectric material film includes a surface electrode; the second surface of the piezoelectric material film faces the top metal layer; the top metal layer of the semiconductor wafer forms a plurality of metal regions, and a plurality of first metal regions of the plurality of metal regions serve as an electrode array, the electrode array including a plurality of electrodes; the second surface of the piezoelectric material film includes a plurality of charge-sensing electrodes, the plurality of charge-sensing electrodes corresponding one-to-one with the plurality of electrodes of the electrode array; the plurality of metal regions of the top metal layer also include second metal regions not belonging to the plurality of first metal regions. The piezoelectric material film has a surface electrode on its first surface electrically connected to the second metal region. Under the force of a touch to be sensed, the piezoelectric material film deforms, causing a change in the spatial shape between the piezoelectric material film and its corresponding electrode or electrode group at the location of the force application. An electrical switch array and a circuit for measuring analog quantities are formed within the MOS layer and multiple intermediate layers of the semiconductor wafer. The circuit for measuring analog quantities is used to measure analog quantities coupled to the multiple electrodes. The multiple electrodes and the second metal region couple the switch array. The switch array is connected to the circuit for measuring analog quantities. The chip package further includes a packaging substrate and / or a lead frame, the packaging substrate and / or lead frame being used to support the semiconductor wafer, and the packaging substrate and / or lead frame being provided with the chip's pins.

[0141] According to the tactile sensor chip of the seventh aspect of this application, it further includes an adhesive film; the adhesive film adheres to the second surface of the piezoelectric material film and the top metal layer; the adhesive film includes a plurality of pores, and the plurality of pores of the adhesive film correspond one-to-one with the plurality of electrodes of the electrode array.

[0142] According to the tactile sensor chip of the seventh aspect of this application, there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array; the size of the gap depends on the thickness of the adhesive film.

[0143] According to the tactile sensor chip of the seventh aspect of this application, under the force of the touch to be sensed on the piezoelectric material film, the piezoelectric material film deforms such that at the location where the force is applied, the charge sensing electrode of the piezoelectric material film contacts and is electrically connected to its corresponding electrode.

[0144] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring analog quantities includes a circuit for measuring capacitance, used to measure the capacitance value of one or more capacitors.

[0145] According to the tactile sensor chip of the seventh aspect of this application, the plurality of electrodes and the piezoelectric material film form a plurality of first capacitors, wherein each electrode of the plurality of electrodes serves as one of the plates of the first capacitor, and the piezoelectric material film serves as the other plate of the first capacitor.

[0146] According to the tactile sensor chip of the seventh aspect of this application, the piezoelectric material film forms a plurality of first capacitors, wherein each of the plurality of charge sensing electrodes serves as one of the plates of the first capacitors, and the surface electrode of the piezoelectric material film serves as the other plate of the first capacitors.

[0147] According to the tactile sensor chip of the seventh aspect of this application, wherein the area of ​​each of the plurality of charge-sensing electrodes is larger than that of the corresponding electrode of the plurality of electrodes.

[0148] According to the tactile sensor chip of the seventh aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the capacitance formed between the first surface of the piezoelectric material film and the charge sensing electrode and the capacitance formed between the charge sensing electrode and the electrodes of the plurality of electrodes are connected in series to form a first capacitor.

[0149] According to the tactile sensor chip of the seventh aspect of this application, if the charge sensing electrode of the piezoelectric material film is in contact with the electrode of the corresponding electrode array, the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array together serve as one of the plates of the first capacitor, or the charge sensing electrode of the piezoelectric material film serves as one of the plates of the first capacitor.

[0150] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring capacitance is further configured to detect the amount of charge on one or more charge-sensing electrodes of the piezoelectric material film by measuring capacitance.

[0151] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring analog quantities is used to measure the charge of one or more charge-sensing electrodes of the piezoelectric material film.

[0152] According to the tactile sensor chip of the seventh aspect of this application, when a touch to be sensed acts on the piezoelectric material film, at the location where the force is applied, the charge sensing electrode of the piezoelectric material film exhibits a first charge quantity corresponding to the force.

[0153] According to the tactile sensor chip of the seventh aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the charge sensing electrode of the piezoelectric material film is not electrically connected to the circuit for measuring the analog quantity.

[0154] According to the tactile sensor chip of the seventh aspect of this application, if the charge sensing electrode of the piezoelectric material film is in contact with the electrode of the corresponding electrode array, the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array form an electrical connection.

[0155] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring analog quantities includes an ADC for detecting the amount of charge on one or more charge-sensing electrodes of the piezoelectric material film by measuring voltage values.

[0156] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring analog quantities includes a circuit for measuring capacitance and a circuit for measuring voltage; the switch array connects the plurality of electrodes and the second metal region to the circuit for measuring voltage and the circuit for measuring capacitance in a time-division multiplexing manner.

[0157] According to the tactile sensor chip of the seventh aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the circuit for measuring capacitance is capable of measuring the capacitance value of a first capacitor formed by the capacitance formed between the first surface of the piezoelectric material film and the charge sensing electrode and the capacitance formed between the charge sensing electrode and the electrodes of the plurality of electrodes in series.

[0158] According to the tactile sensor chip of the seventh aspect of this application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, the circuit for measuring capacitance is capable of measuring the capacitance value of the first capacitor formed between the first surface of the piezoelectric material film and the charge sensing electrode.

[0159] According to the tactile sensor chip of the seventh aspect of this application, if the charge sensing electrode of the piezoelectric material film is in contact with the electrode of the corresponding electrode array, the circuit for measuring capacitance is able to measure the capacitance value of a first capacitor, wherein the charge sensing electrode of the piezoelectric material film serves as the electrode of the first capacitor, and the first surface of the piezoelectric material film serves as the other electrode of the first capacitor.

[0160] According to the tactile sensor chip of the seventh aspect of this application, the circuit for measuring capacitance is further configured to detect the amount of charge on one or more charge-sensing electrodes of the piezoelectric material film by measuring capacitance.

[0161] According to the tactile sensor chip of the seventh aspect of this application, the capacitor for measuring voltage is used to detect the amount of charge of one or more charge sensing electrodes of the piezoelectric material film by measuring the voltage value.

[0162] According to the tactile sensor chip of the seventh aspect of this application, in response to the force exerted by a touch to be sensed on the piezoelectric material film, the charge sensing electrode of the piezoelectric material film contacts and forms an electrical connection with its corresponding electrode, the voltage measuring circuit measures the amount of a first charge corresponding to the force appearing on the charge sensing electrode of the piezoelectric material film at the location where the force is applied to identify the occurrence of the touch to be sensed; in response to identifying that the touch to be sensed has occurred, the capacitance measuring circuit measures the capacitance value of a first capacitance formed between the charge sensing electrode of the piezoelectric material film at the location where the force is applied and the first surface of the piezoelectric material film.

[0163] According to the tactile sensor chip of the seventh aspect of this application, the magnitude and / or direction of the force exerted by the touch on the piezoelectric material film by the touch to be sensed is calculated based on the capacitance value of the first capacitor.

[0164] According to the tactile sensor chip of the seventh aspect of this application, the piezoelectric material film serves as the dielectric between the plates of the plurality of first capacitors.

[0165] According to a tactile sensor chip of a seventh aspect of this application, the surface electrode includes a plurality of regions isolated from each other; the second metal region of the top metal layer includes a plurality of metal regions; each region of the surface electrode is electrically connected to one of the plurality of metal regions of the second metal region.

[0166] According to the tactile sensor chip of the seventh aspect of this application, the top metal layer, the switch array, and the circuit for measuring analog quantities are manufactured on the semiconductor wafer using integrated circuit chip manufacturing processes.

[0167] According to a seventh aspect of this application, a tactile sensor chip includes a second isolation layer covering the outside of the tactile sensing structure relative to the chip for protecting the tactile sensing structure.

[0168] According to the tactile sensor chip of the seventh aspect of this application, the plurality of electrodes and / or the second metal region are directly electrically connected to the switch array; or the plurality of electrodes and / or the second metal region are electrically connected to the input terminal of a semiconductor amplifier, and the output terminal of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer; or

[0169] The plurality of electrodes and / or the second metal region are coupled to the input terminal of the semiconductor amplifier via an electric field, and the output terminal of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer.

[0170] According to the tactile sensor chip of the seventh aspect of this application, the semiconductor amplifier is a MOS transistor, and the input terminal of the semiconductor amplifier is the gate of the MOS transistor.

[0171] According to a tactile sensor chip of a seventh aspect of this application, the semiconductor amplifier is formed in an intermediate layer of the semiconductor wafer. According to a tactile sensor chip of a seventh aspect of this application, the chip includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent, and a piezoelectric material film covers part or all of the plurality of semiconductor wafers; each of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds one-to-one with the plurality of charge-sensing electrodes.

[0172] According to the seventh aspect of this application, a tactile sensor chip wherein a plurality of said semiconductor wafers are interconnected to transmit analog signals and / or digital signals.

[0173] According to the tactile sensor chip of the seventh aspect of this application, the surface electrode includes a first region and a second region isolated from each other; the plurality of semiconductor wafers includes a first semiconductor wafer and a second semiconductor wafer.

[0174] According to the tactile sensor chip of the seventh aspect of this application, the projection of the first region of the surface electrode at least partially overlaps with the first semiconductor wafer; and the projection of the second region of the surface electrode at least partially overlaps with the second semiconductor wafer.

[0175] According to the tactile sensor chip of the seventh aspect of this application, the first region is electrically connected to the second metal region of the first semiconductor wafer, and the second region is electrically connected to the second metal region of the second semiconductor wafer; there is no electrical connection between the first portion and the second portion.

[0176] According to the tactile sensor chip of the seventh aspect of this application, the first region and the second region form a second capacitor, wherein the first region and the second region respectively serve as one of the two plates of the second capacitor; or the first region and / or the second region are used to form a second capacitor, wherein the first region and / or the second region serve as one of the plates of the second capacitor.

[0177] According to the tactile sensor chip of the seventh aspect of this application, the surface electrode includes a plurality of regions isolated from each other;

[0178] The chip includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent, and the piezoelectric material film covers part or all of the plurality of semiconductor wafers.

[0179] According to the tactile sensor chip of the seventh aspect of this application, the projection of each of the plurality of mutually isolated regions of the surface electrodes at least partially overlaps with one of the plurality of semiconductor wafers.

[0180] The tactile sensor chip for a humanoid robot's dexterous hand according to embodiments of this application has the following advantages: the integration of the tactile sensing structure simplifies the application, eliminating the need for complex capacitor plates outside the chip; the capacitor plates for acquiring signals and the digital-to-analog conversion circuit are directly integrated on the chip, reducing information attenuation and interference caused by long-distance transmission of analog information; the use of integrated circuit manufacturing processes enables tactile sensing products that are easy to industrialize and have high precision and high spatial resolution; and the ultra-thin insulating layer improves the sensitivity of the capacitive signal by orders of magnitude compared to traditional insulating coatings. Attached Figure Description

[0181] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0182] Figures 1A-1C A tactile sensor chip according to an embodiment of this application is shown.

[0183] Figure 2 A structural diagram of a tactile sensing structure according to an embodiment of this application is shown.

[0184] Figure 3A A perspective view of a tactile sensing micro / nano structure located in the top metal layer according to an embodiment of this application is shown.

[0185] Figure 3B A perspective view of a tactile sensing micro / nano structure located in the top metal layer according to yet another embodiment of this application is shown.

[0186] Figure 3C A cross-sectional view of a tactile sensing chip according to an embodiment of this application is shown.

[0187] Figure 3D A cross-sectional view of a tactile sensing chip according to yet another embodiment of this application is shown.

[0188] Figure 4AA circuit schematic diagram of a tactile sensor according to an embodiment of this application is shown.

[0189] Figure 4B A circuit schematic diagram of a tactile sensor according to another embodiment of this application is shown.

[0190] Figure 5 The package of a tactile sensor chip according to an embodiment of this application is shown.

[0191] Figure 6 The packaging process flow of a tactile sensor chip according to an embodiment of this application is shown.

[0192] Figure 7 An exploded view of the components of a tactile sensor chip according to yet another embodiment of this application is shown.

[0193] Figure 8A Showing according to Figure 7 The embodiment of the tactile sensing structure is a tactile sensing micro / nano structure array.

[0194] Figure 8B Showing according to Figure 8A A partial magnified view of the tactile sensing micro / nano structure of the embodiment of the tactile sensing structure.

[0195] Figure 8C A partially magnified perspective view of the tactile sensing micro / nano structure according to an embodiment of this application is shown.

[0196] Figure 9A Showing according to Figure 7 A three-dimensional diagram of the tactile sensing micro / nano structure of an embodiment.

[0197] Figure 9B Showing according to Figure 7 A side view of the tactile sensing micro / nano structure of an embodiment.

[0198] Figures 10A-10G A tactile sensor chip according to yet another embodiment of this application is shown.

[0199] Figure 11 An exploded view of various parts of a tactile sensor chip according to yet another embodiment of this application is shown.

[0200] Figure 12 A surface view of a piezoelectric material film according to an embodiment of this application is shown.

[0201] Figure 13A , Figure 13B and Figure 13C Showing according to Figure 11 A perspective view of an embodiment of this application.

[0202] Figure 14 Showing according to Figure 11 A cross-sectional view of the tactile sensing chip according to an embodiment of this application.

[0203] Figure 15 Showing according to Figure 11 The packaging process flow of the tactile sensor chip in the embodiments of this application.

[0204] Figure 16A A circuit schematic diagram of a tactile sensor chip according to an embodiment of this application is shown.

[0205] Figure 16B A circuit schematic of a tactile sensor chip according to yet another embodiment of this application is shown.

[0206] Figure 17A and Figure 17B A tactile sensor assembly according to another embodiment of this application is shown.

[0207] Figure 18A , 18B 18C illustrates a tactile sensor chip according to another embodiment of this application. Detailed Implementation

[0208] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0209] According to embodiments of this application, a tactile sensor unit array is integrated into an integrated circuit chip. The tactile sensor chip is implemented by utilizing the high integration, small linewidth, high precision, and low power consumption characteristics of integrated circuit chips. The tactile sensing structure, which is part of the tactile sensor chip package, together with the top metal layer of the semiconductor wafer within the chip, forms a capacitor for sensing the external environment, thereby solving the technical problem to be addressed in this application.

[0210] Figures 1A-1C A tactile sensor chip according to an embodiment of this application is shown.

[0211] Figure 1A A tactile sensor chip according to an embodiment of this application is shown. Figure 1B yes Figure 1A An exploded view of the components of a tactile sensor chip. Figure 1C yes Figure 1B An exploded view of the semiconductor wafer of a tactile sensor chip.

[0212] A tactile sensor chip comprises a semiconductor wafer, a tactile sensing structure, a package housing, and a package base. The package housing, tactile sensing structure, and package base together form the package of the tactile sensor chip, providing protection for the encapsulated semiconductor wafer. Thus, the tactile sensing structure becomes an integral part of the tactile sensor chip package. The package housing includes an opening. After the package housing and tactile sensing structure are pressed and fixed together, the upper surface of the tactile sensing structure is exposed through the opening, allowing the tactile sensing structure to approach or contact the external environment. Therefore, when external touch acts on the upper surface of the tactile sensing structure, the tactile sensing structure undergoes a deformation that can be sensed by the analog signal measurement circuitry within the semiconductor wafer. The package base supports the semiconductor wafer. The package base includes a package substrate and / or a lead frame. The lead frame is used to form the chip's pins and to connect gold wires leading from the semiconductor wafer. Some package types (e.g., BGA packages) do not use a lead frame; instead, the gold wires leading from the semiconductor wafer are connected to solder balls on the package substrate.

[0213] The tactile sensing structure comprises an array of multiple tactile sensing micro / nanostructures (referred to as a tactile sensing micro / nanostructure array). The tactile sensing micro / nanostructures deform under the force of the touch to be sensed. The tactile sensing structure is flexible and is formed from, for example, conductive silicone or metal using, for example, injection molding, 3D printing processes, or other existing or future technologies.

[0214] See Figure 1C A semiconductor wafer includes a top metal layer, a MOS layer, and multiple intermediate layers. The top metal layer is located on the surface of the semiconductor wafer away from the substrate. Optionally, an isolation layer is also included above the top metal layer to protect it. The isolation layer is formed of, for example, SiO2 or other insulating materials with a certain degree of rigidity. The MOS layer is the layer in the semiconductor wafer that forms the MOS (Metal-Oxide-Semiconductor) structure. The MOS layer is typically located above the substrate. It is understood that there can be multiple MOS layers in a semiconductor wafer. The multiple intermediate layers of the semiconductor wafer provide wiring.

[0215] According to embodiments of this application, a top metal layer forms multiple metal regions. In the prior art, the metal regions of the top metal layer are used to connect gold wires to transmit electrical signals within a semiconductor wafer to chip pins. In embodiments of this application, some metal regions of the top metal layer serve as an electrode array. The electrodes of the electrode array correspond to the tactile sensing micro / nanostructures of the tactile sensing structure. Thus, the electrodes of the electrode array form one of the plates of a measurable capacitance, and the corresponding tactile sensing micro / nanostructure serves as the other plate of the capacitor. When the tactile sensing structure is touched, the tactile sensing micro / nanostructure deforms, causing a change in the distance between the two plates of the capacitor, thereby changing the capacitance value. Touch is sensed by measuring the change in capacitance value.

[0216] It is understood that each electrode in the electrode array forms a measurable capacitance. By forming multiple measurable capacitances in the tactile sensor chip, the location and / or magnitude of the touch can be identified through the relative relationship of the capacitance values ​​of each capacitor.

[0217] Optionally, the electrodes of the electrode array in the top metal layer have a specified area so that the formed capacitor has a sufficiently large measurable capacitance value. The area of ​​the electrodes in the electrode array and the spacing between the electrodes in the electrode array reflect the accuracy or spatial resolution of the tactile sensor chip according to the embodiments of this application. For example, setting the spacing between the centers of adjacent electrodes in the electrode array to 1 mm provides 1 mm 2 Precise spatial resolution. Thanks to the high integration of semiconductor wafers, the spacing between adjacent electrode centers in an electrode array can be made smaller to provide higher spatial resolution.

[0218] The tactile sensing micro / nanostructures correspond to the electrodes of the electrode array in the top metal layer. However, each tactile sensing micro / nanostructure can have the same potential (and be electrically connected to each other), allowing the size of the tactile sensing micro / nanostructures to be larger than the electrodes in the electrode array, thus reducing the requirements for the fabrication process. In other words, electrical isolation is not required between the individual tactile sensing micro / nanostructures. The tactile sensing micro / nanostructures are designed so that they can deform relatively independently under tactile force, thus generating changes in capacitance at the corresponding spatial location. The deformation of each tactile sensing micro / nanostructure does not need to be absolutely independent; even if the deformation of one tactile sensing micro / nanostructure causes deformation of adjacent tactile sensing micro / nanostructures, the difference in the magnitude of the deformation will still produce changes in capacitance at the corresponding spatial location. In some cases, the force generated by the touch acts on an area rather than a single point, causing multiple adjacent tactile sensing micro / nanostructures to deform simultaneously.

[0219] Optionally, the projection of the tactile sensing micro / nano structure in a direction perpendicular to the main plane of the semiconductor wafer covers the electrodes of its corresponding electrode array, thereby also shielding the electrodes to prevent the influence of electric fields or electrical signals from the surrounding environment of the tactile sensor chip on the capacitance value of the capacitance formed by the electrodes. Optionally, the projection of the tactile sensing structure in a direction perpendicular to the main plane of the semiconductor wafer completely covers the semiconductor wafer to shield the electrode array.

[0220] Circuits for measuring capacitance are implemented in semiconductor wafers, such as CDC (capacitance-to-digital converter) or ADC (analog-to-digital converter) in the prior art. Electrodes of the electrode array in the top metal region are connected to the capacitance measurement circuit via vias and / or interconnects formed in multiple intermediate layers of the semiconductor wafer. Generally, the connection between the capacitor and the capacitance measurement circuit is called a capacitance channel. Since the capacitance channels between the electrodes of the electrode array and the capacitance measurement circuit are formed in multiple intermediate layers of the semiconductor wafer, even with a large number of electrodes in the electrode array, a sufficient number of traces and capacitance channels can be provided in the semiconductor wafer. This solves the technical problem in the prior art where it is difficult or impossible to fabricate a large number of interconnects in a limited space when the number of capacitance channels in high-precision tactile sensors is too large. Furthermore, integrating the electrodes of the electrode array and the capacitance measurement circuit on the same semiconductor wafer greatly shortens the signal transmission distance from the capacitor plates to the capacitance measurement circuit, thereby reducing signal attenuation and interference of analog signals due to long-distance transmission, improving the accuracy of capacitance measurement, and / or reducing the complexity and cost required to achieve the same measurement accuracy.

[0221] In one example, the individual tactile sensing micro / nanostructures of the tactile sensing structure have the same potential, so that all the tactile sensing micro / nanostructures of the tactile sensing structure can be connected to the circuit for measuring capacitance on a semiconductor wafer via a single metal wire without introducing excessive manufacturing costs and difficulties.

[0222] In yet another example, the tactile sensing structure comprises a few (e.g., two, four) electrically isolated sections. These electrically isolated sections are individually connected to a semiconductor wafer via gold wires. Even with high spatial precision in the tactile sensor chip (e.g., including 100 or more tactile sensing micro / nano structures), only a few metal wires are needed to connect the tactile sensing structure to the semiconductor wafer, without introducing excessively high manufacturing costs and difficulties.

[0223] Optionally, a switch array is also formed in the semiconductor wafer to connect the capacitance channels of each electrode in the electrode array connected to the top metal region to the capacitance measurement circuit in a time-division multiplexing manner. This further reduces the number of interconnections required in the semiconductor wafer, and allows the measurement of multiple capacitances formed in the tactile sensor chip to be achieved using a single capacitance measurement circuit. The switch array is also used to connect multiple capacitance channels together to combine the plates of multiple measurable capacitances to change the plate area and / or plate shape of the measurable capacitance, thereby facilitating the sensing of capacitance changes caused by touch. The switch array is implemented, for example, as a multiplexer / selector, or employs an analog signal router structure.

[0224] Optionally, the tactile sensing structure can also be connected to a switch array, allowing it to be connected to ground (GND) in a time-division multiplexing manner or to a capacitance measurement circuit via a capacitor channel. The switch array can also electrically connect one, some, or all of the electrically isolated portions of the tactile sensing structure. This enables the measurement of various capacitances and facilitates the sensing of the external environment. For example, by using two electrically isolated portions as capacitor plates, it is possible to sense objects approaching the tactile sensing structure in the external environment (even if the object is not in contact with the tactile sensing structure) by measuring the capacitance; this sensing principle is prior art.

[0225] Figure 2 A structural diagram of a tactile sensing structure according to an embodiment of this application is shown.

[0226] As an example Figure 2 In this touch-sensing micro / nanostructure array, multiple touch-sensing micro / nanostructures are arranged in rows and columns on the same plane, giving each micro / nanostructure a specific position within the array. Under the force of a touch to be sensed, one or more adjacent touch-sensing micro / nanostructures deform, altering the shape of the capacitor plates formed by these micro / nanostructures and the electrodes of the top metal layer of the semiconductor wafer, thus changing the capacitance value. By measuring the change in capacitance, the deformed touch-sensing micro / nanostructures are identified, thereby determining the location of the touch. Therefore, the dimensional accuracy of the touch-sensing micro / nanostructures determines the accuracy of the touch sensor chip's touch location detection. Furthermore, the magnitude of the force generated by the touch can be identified by the change in capacitance formed by the deformed micro / nanostructures. Even further, the direction of the force and the direction or trajectory of the touch movement can be identified by the change in capacitance formed by the deformed micro / nanostructures.

[0227] See Figure 2 For example, the tactile sensing micro / nanostructures are circular on the main plane of the tactile sensing structure. Adjacent tactile sensing micro / nanostructures are connected by interconnecting structures. The tactile sensing micro / nanostructures and interconnecting structures are made of, for example, conductive silicone material, thus being conductive and flexible. Through the interconnecting structures, when one tactile sensing micro / nanostructure is subjected to force and deforms, its adjacent tactile sensing micro / nanostructures also undergo relatively small deformations.

[0228] The associated structure extends along the main plane of the tactile sensing structure, forming the main plane of the tactile sensing structure. The associated structure provides support and fixation for the tactile sensing micro / nanostructure. The associated structure is flexible and conductive.

[0229] Figure 3A A perspective view of a tactile sensing micro / nano structure located in the top metal layer according to an embodiment of this application is shown.

[0230] See Figure 3A The tactile sensing micro / nanostructure includes upward-convex curved surfaces and downward-convex curved surfaces. For simplicity, the direction perpendicular to the main plane of the tactile sensing structure, pointing from the semiconductor wafer to the tactile sensing structure, is called "up," and the direction opposite to "up" is called "down." Figure 3A In the example, both the upward-convex and downward-convex curved structures are spherical parts. Their circular bases are connected, for example, attached. The base area of ​​the upward-convex structure is larger than that of the downward-convex structure. The tactile force to be perceived acts on the upward-convex surface. The lower part of the downward-convex structure abuts against the semiconductor wafer. Because the hardness of the top metal layer and optional insulating layer of the semiconductor wafer is greater than the hardness of the tactile sensing structure, when pressed, the entire bottom surface of the downward-convex curved structure of the tactile sensing micro / nanostructure deforms downwards, while the lower part of the downward-convex curved structure abutting the semiconductor wafer remains almost unchanged, causing the downward-convex curved structure to collapse. This changes the capacitance formed by the tactile sensing micro / nanostructure (as a capacitor plate) and the electrodes of the top metal layer (as the other plate of the capacitor). Optionally, when pressed, the upwardly bulging curved structure collapses due to the support of the bottom surface of the associated structure and the downwardly bulging curved structure, thus also affecting the capacitance value. When an isolation layer exists above the top metal layer of the semiconductor wafer, it also acts as a dielectric between the capacitor plates, affecting the capacitance value. This isolation layer typically has a large dielectric constant, resulting in a larger capacitance value, which is beneficial for measuring the capacitance value.

[0231] Furthermore, the isolation layer is manufactured using integrated circuit technology and can have an extremely thin thickness (e.g., on the order of 100 ns). This results in a very small gap between the two plates of the capacitor formed by the electrodes of the electrode array of the top metal layer and the tactile sensing micro / nano structure (in at least a portion of the area, this gap is equal to the thickness of the isolation layer). Consequently, the formed capacitor has a larger capacitance value. Compared to the larger gap between the capacitor plates formed by prior art processes, the embodiments of this application achieve an order-of-magnitude improvement in the sensitivity of capacitance measurement.

[0232] Continue reading Figure 3AFor example, each tactile sensing micro / nanostructure in the tactile sensing micro / nanostructure array corresponds one-to-one with an electrode in the electrode array of the top metal layer of the semiconductor wafer. The projection of the tactile sensing micro / nanostructure onto the semiconductor wafer's main plane in the vertical direction covers its corresponding electrode. Optionally, the projection of the lower vertex of the downwardly convex curved structure of the tactile sensing micro / nanostructure is located at the geometric center of the corresponding electrode. Optionally, a non-conductive isolation layer exists between the lower vertex of the downwardly convex curved structure of the tactile sensing micro / nanostructure and the corresponding electrode, so that although the lower vertex of the curved structure contacts the isolation layer, there is no electrical connection between it and the corresponding electrode; instead, they act as capacitor plates to form a capacitor.

[0233] Optionally, the semiconductor wafer providing the electrode array is in direct contact with the tactile sensing structure, and no other semiconductor wafers are included between the top metal layer of the semiconductor wafer and the tactile sensing structure, such as a MEMS structure implemented without other semiconductor wafers, in order to avoid introducing high chip manufacturing costs.

[0234] Understandable, although Figure 3A In this tactile sensing micro / nanostructure, the upwardly bulging and downwardly bulging curved surfaces are each spherical portions. The overall tactile sensing micro / nanostructure or its curved surfaces can have other shapes, such as ellipsoidal portions, hollow cuboids (with rounded corners), hollow truncated trapezoids, or tetrahedrons with their vertices facing downwards. Various structures that easily deform under pressure and readily return to their initial shape after the pressure is removed can be used to realize tactile sensing micro / nanostructures.

[0235] Still optional, Figure 3A In this context, while tactile sensing micro / nanostructures include both upwardly convex and downwardly convex curved structures, alternatively, a single downwardly convex curved structure can be used. Instead, a planar flexible layer replaces the upwardly convex curved structure, extending over the downwardly convex curved structures of multiple or all of the tactile sensing micro / nanostructures in the array. This reduces manufacturing complexity and cost. The flexible layer is either bonded to or integrally formed with the bottom surface of the downwardly convex curved structure.

[0236] Optionally, the tactile sensing micro / nanostructure includes two downwardly convex curved surface structures that overlap vertically. The lower curved surface structure is the same as... Figure 3A The downward-convex curved surface structures shown are the same or similar, and the shape of the curved surface structure located above is the same. Figure 3A The upward-convex curved structures shown are identical or similar, but face opposite directions. The top of the upper curved structure faces downwards, while its bottom faces upwards. The bottom of the lower curved structure is attached to the top of the upper curved structure.

[0237] Alternatively, the upward-convex curved structure and the downward-convex curved structure can be hollow.

[0238] Figure 3B A perspective view of a tactile sensing micro / nano structure located in the top metal layer according to yet another embodiment of this application is shown.

[0239] See Figure 3B In a semiconductor wafer, the electrodes of the electrode array in the top metal layer are grouped, for example, four electrodes arranged in a 2x2 row and column configuration. These four electrodes are called an electrode group. Electrodes within an electrode group are relatively close to each other, while the distance between electrode groups is relatively greater. For example, the distance between two electrodes belonging to different electrode groups is greater than the distance between two electrodes within the same electrode group.

[0240] exist Figure 3B In this embodiment, the tactile sensing micro / nanostructures correspond one-to-one with the electrode groups. For example, the projection center of the tactile sensing micro / nanostructure in a direction perpendicular to the main plane of the semiconductor wafer is located at the center of the electrode group, and the apex of the downwardly convex curved structure of the tactile sensing micro / nanostructure abuts the center of the electrode group. Optionally, the projection of the tactile sensing micro / nanostructure covers part or all of the electrode group.

[0241] The tactile sensing micro / nanostructure forms a capacitor with each electrode of the electrode group. The tactile sensing micro / nanostructure acts as one of the plates of the capacitor, while each electrode of the electrode group acts as the other plate of the formed capacitor. The circuitry for measuring capacitance can then identify the position of the force generated by a touch relative to the electrode group—for example, which electrode it is closer to and / or farther away from—by measuring the values ​​of the multiple capacitors formed by the electrode group and based on the relationships between these values.

[0242] Figure 3B The embodiments are also used to sense the direction of touch. When the force generated by the touch is not perpendicular to the main plane of the semiconductor wafer, but rather at an angle relative to the normal to the main plane, the deformation of the downwardly convex curved structure of the tactile sensing micro / nanostructure is non-uniform in the direction parallel to the main plane of the semiconductor wafer. For example, in Figure 3B In the upper left electrode region of the electrode assembly, the downward-convex curved structure causes greater deformation, resulting in a smaller distance (e.g., average distance) between each point of the upper left electrode and the downward-convex curved structure; while in the lower right electrode region, the downward-convex curved structure causes less deformation, resulting in a larger distance (e.g., average distance) between each point of the lower right electrode and the downward-convex curved structure; consequently, the capacitance formed by the upper left electrode increases, while the capacitance formed by the lower right electrode decreases; based on this, the angle between the direction of force (i.e., the direction of touch) and the normal of the principal plane can be identified.

[0243] In some cases, the force of touch is applied over an area rather than a single point. For example, the area affected by a touch created by finger pressure differs from the area affected by acupuncture. Figure 3B The electrode array on display can also identify the difference in the magnitude of the force exerted by a touch on a region in different directions or locations within that region, thereby identifying the characteristics of the touch (such as whether it is a finger or a needle prick, the area of ​​contact between the fingertip and the sensor chip, or the orientation of the finger).

[0244] Optionally, the electrode assembly may include other numbers of electrodes, such as two, three, five, or even more. Again, optionally, the electrodes need not be... Figure 3A and 3B The rectangle shown can also be a circle or other easily manufactured shapes. Alternatively, the electrode assembly can be a circular surface, including a central circular electrode and four sector electrodes surrounding the circular electrode.

[0245] Alternatively, touch can cause deformation of multiple tactile sensing micro / nanostructures, altering the magnitude of multiple capacitors or sets of capacitors corresponding to these tactile sensing micro / nanostructures. This allows for the identification of more features of the touch (e.g., the magnitude and direction of the touch force, the size / shape of the object being touched, etc.).

[0246] Figure 3C A cross-sectional view of a tactile sensing chip according to an embodiment of this application is shown.

[0247] The top metal layer of the semiconductor wafer in a tactile sensing chip includes multiple metal regions that, in addition to serving as electrodes to form capacitance with the tactile sensing micro / nanostructure, also include other metal regions used to form electrical connections with the tactile sensing structure. See also... Figure 3C Metal region 310 is located directly beneath the tactile sensing micro / nanostructure, serving as an electrode; while metal region 320 is in contact with the edge of the tactile sensing structure, forming an electrical connection. It can be understood that an isolation layer exists between metal region 310 and the tactile sensing micro / nanostructure, but there is no electrical connection between them (thus forming a capacitor). Metal region 310 and metal region 320 are each connected to a circuit for measuring capacitance in the MOS layer via vias and / or intermediate layers within the semiconductor wafer. For example, metal region 320 is connected to ground so that the entire tactile sensing structure has a ground potential, which helps to shield the tactile sensor from interference from external electromagnetic signals.

[0248] Figure 3CIn this example, the support portion at the edge of the tactile sensing structure has a step. The support portion abuts against the packaging substrate or lead frame of the tactile sensing chip, supporting the tactile sensing structure and forming a gap between the tactile sensing structure and the packaging substrate / lead frame. The semiconductor wafer is placed within this gap. The step on the support portion abuts against metal region 320, allowing the tactile sensing structure to form an electrical connection with the circuitry within the semiconductor wafer. Furthermore, no additional leads are required to connect the tactile sensing structure and the semiconductor wafer, which helps reduce the manufacturing cost of the tactile sensor chip.

[0249] Optionally, the metal region 320 can be a rectangular border shape distributed along the edge of the top metal layer of the semiconductor wafer. Thus, the metal region 320 has a larger area compared to the metal region 310, providing better grounding and shielding. The shape of the steps on the support of the tactile sensing structure corresponds to the metal region 320. Again, optionally, gaps (e.g., comb-shaped or toothed) are present on the support of the tactile sensing structure so that the gap regions do not contact the top metal layer of the semiconductor wafer. Some metal regions of the top metal layer can form PADs and connect to the chip's pins via gold wires passing through the gaps.

[0250] Figure 3D A cross-sectional view of a tactile sensing chip according to yet another embodiment of this application is shown.

[0251] same Figure 3C Compared to the illustrated embodiments, Figure 3D The embodiment also includes a support portion 370 located between the tactile sensing structure and the semiconductor wafer. The support portion 370 includes multiple support units (372, 374, and 376). These support units correspond to the tactile sensing micro / nanostructure. When the tactile sensing micro / nanostructure is deformed under pressure, the support units provide support to limit the deformation within a certain range, preventing excessive deformation from damaging the tactile sensing micro / nanostructure. The support units abut against the top layer of the semiconductor wafer to support the tactile sensing micro / nanostructure. The support portion 370 is made of an insulating material.

[0252] Figure 3D Support 360 was also demonstrated. Support 360 is located at the edge of the tactile sensing structure and serves to support the entire tactile sensing structure. Support 370 provides support for each individual tactile sensing micro / nano structure through various support units. Optionally, only support 370 can be used, without support 360.

[0253] The support portion 370 is generally mesh-like. After being attached to the tactile sensing structure, the tactile sensing micro / nanostructure of the tactile sensing structure is exposed through the mesh of the support portion. The portion around the mesh becomes a support unit to limit the deformation range of the tactile sensing micro / nanostructure.

[0254] Optionally, the support unit has holes or openings in the center to protect or avoid further structures formed on the top metal layer of the semiconductor wafer. For example, some areas of the top metal layer may have pads or protruding structures that are protected by the holes or openings in the support unit. These holes or openings serve as spaces to accommodate such structures, thereby preventing them from being squeezed or damaged when tactilely sensing deformation of the micro / nano structures.

[0255] Figure 4A A circuit schematic diagram of a tactile sensor according to an embodiment of this application is shown.

[0256] A tactile sensor chip includes circuitry formed within a semiconductor wafer for measuring capacitance. Figure 4A The diagram illustrates a CDC (Capacitive-to-Digital Converter), a switch array, and multiple capacitors formed by electrodes of an electrode array on the top metal layer of a semiconductor wafer and corresponding tactile sensing micro / nano structures of a tactile sensing structure. Each electrode of the electrode array is connected to the switch array via holes and / or wires formed in the semiconductor wafer. Optionally, the tactile sensing structure is connected to ground. For example, in... Figure 4A The tactile sensing structure is not explicitly described in the diagram. It is connected to a switch array via one or more metal regions in the top metal layer that are different from the metal regions providing the electrode array, and then connected to ground via the switch array. The switch array can also connect the tactile sensing structure to the CDC.

[0257] A switch array connects each electrode of an electrode array to a circuit for measuring capacitance. The capacitance-measuring circuit has, for example, a single port for measuring self-capacitance (e.g.,...). Figure 4A (As shown), or two or more ports are used to measure mutual capacitance. For example, the number of ports in the capacitance measuring circuit is significantly less than the number of electrodes in the electrode array. The switching array selectively and / or time-divisionally connects the electrodes of the electrode array, as well as optionally tactile sensing structures, to the capacitance measuring circuit, so that even a single capacitance measuring circuit can measure the capacitance formed by each of the multiple electrodes of the electrode array.

[0258] As an example, a circuit for measuring capacitance is connected to the electrodes of an electrode array in a specified order using a switch array to measure and scan the capacitance value or capacitance change of multiple capacitors. As another example, multiple electrodes of an electrode array are simultaneously connected to a circuit for measuring capacitance using a switch array, so that these multiple electrodes together form the plates of the same capacitor, resulting in capacitors located at different positions, with different shapes and capacitance values, thereby providing diverse tactile sensing capabilities.

[0259] Optionally, the switch array connects the electrodes and / or tactile sensing structures to ground. Grounding can provide a reference potential or shielding of nearby electrodes to reduce or eliminate interference.

[0260] Optionally, a switch array connects the tactile sensing structure (excluding the electrodes of the electrode array) to a circuit for measuring capacitance. The tactile sensing structure forms a capacitance with an object in the external environment. The proximity of an external object is sensed (without contact) with the tactile sensor chip by measuring such capacitance changes. The tactile sensing structures of two or more tactile sensor chips can each act as plates to form capacitance. Such capacitance changes are measured to sense the proximity of an external object over a larger spatial area. Multiple tactile sensors can be interconnected to form a distributed capacitance sensor system. The operating principle of a distributed capacitance sensor system can be found in Chinese patent applications with application numbers 202110964601.4, 202110957229.4, 202210309501.2, 202210309297.4, 202210303165.0, and 202210303160.8.

[0261] Optionally, the semiconductor wafer may also include a processor, a sequence generator for generating control signals for a switch array, a communication unit or network unit for communicating with a network, an analog signal router for transmitting analog signals between multiple electrodes / ports, a neural network unit, and / or drive circuitry for driving external objects such as fingers to generate mechanical motion. Still optionally, the semiconductor wafer may also include analog signal ports for connecting to analog signal ports of other semiconductor wafers, thereby transmitting analog signals across wafers / chips between multiple semiconductor wafers.

[0262] Figure 4B A circuit schematic diagram of a tactile sensor according to another embodiment of this application is shown.

[0263] same Figure 4A Compared to the illustrated embodiments, Figure 4B In one embodiment, a semiconductor amplifier array is also formed in the semiconductor wafer. The semiconductor amplifier array includes multiple semiconductor amplifiers, each corresponding to one of the electrodes of an electrode array. The electrodes of the electrode array are coupled to the input terminals of their respective semiconductor amplifiers, and the output terminals of the semiconductor amplifiers are connected to a circuit for measuring capacitance via a connection array of switches. The semiconductor amplifiers amplify the analog electrical signal of the electrodes to improve the accuracy or resolution of the capacitance measured by the electrodes.

[0264] A semiconductor amplifier is, for example, a single MOSFET with its gate coupled to an electrode and its drain connected to an array of switches. Alternatively, a semiconductor amplifier may be an operational amplifier circuit formed by multiple MOSFETs or other forms of operational amplifier circuits.

[0265] Optionally, in the semiconductor wafer, the semiconductor amplifier is formed in an intermediate layer beneath the electrode array, allowing the electrodes to be directly connected to the input of the semiconductor amplifier via vias without the need for complex wiring. Alternatively, the electrodes of the electrode array can be coupled to the corresponding input of the semiconductor amplifier via an electric field without a direct electrical connection. For example, the capacitor formed by the electrodes is charged, accumulating charge on the electrodes and causing a change in the electric field, which acts on the input of the semiconductor amplifier, generating an amplified output signal at the output of the semiconductor amplifier.

[0266] Alternatively, due to the amplification of the electrical signal on the electrodes by the semiconductor amplifier, even a small capacitance value corresponding to the electrode can be effectively identified by the capacitance measurement circuit. Compared with large capacitance values, small-value capacitors can have lower cost, smaller area, and smaller volume. As a result, the area of ​​the electrodes in the electrode array can be made smaller (achieving higher spatial resolution, such as 0.1mm x 0.1mm), and the isolation layer on the electrode array can be thicker (more robust). This also allows for better spatial coverage or encapsulation of the electrodes by the tactile sensing micro / nano structure (reducing interference from electromagnetic signals in the external environment on capacitance measurement).

[0267] The tactile sensor chip package according to embodiments of this application, in addition to protecting the semiconductor wafer within the chip and providing pins for connecting the chip to external circuits, also provides a tactile sensing structure capable of deformation under force. The deformation generated by one or more tactile sensing micro / nanostructures in the tactile sensing micro / nanostructure array of the tactile sensing structure can distinguish the magnitude, direction, contact surface shape, and / or movement trajectory of the force acting on the package. The tactile sensing structure itself is conductive, thereby providing a single equipotential surface or several equipotential regions with equal potential within each region. The tactile sensing structure is connected to the packaged semiconductor wafer through one or a few electrical connections, allowing the circuitry within the semiconductor wafer to utilize the tactile sensing structure as part of the circuitry, thus overcoming the limitations of integrated circuit technology to obtain chips with more diverse functions or performance.

[0268] Limitations of integrated circuit technology include, for example, restrictions on the materials that can be used, limitations on the shape / size of the processed components, difficulty in providing flexible structures, and high design and manufacturing costs. However, the chip packaging of this application overcomes the limitations of integrated circuit technology and expands the functionality of the implemented chip by incorporating a tactile sensing structure, fabricated outside the semiconductor wafer and without the need for integrated circuit technology, into the application circuitry.

[0269] Therefore, in addition to being used for packaging semiconductor wafers according to embodiments of this application, the packaging of tactile sensor chips according to embodiments of this application can also be used for other semiconductor wafers.

[0270] Figure 5 The package of a tactile sensor chip according to an embodiment of this application is shown.

[0271] The tactile sensor chip package includes a package housing, a tactile sensing unit, and a lead frame. In some embodiments, the lead frame is replaced by a package substrate. In still other embodiments, the lead frame and the package substrate coexist.

[0272] The package housing is rectangular in shape, used to secure the tactile sensing structure to the lead frame / package substrate. The main plane of the package housing includes an opening to expose the tactile sensing micro / nanostructure array of the tactile sensing structure to the external environment after it has been secured to the lead frame / package substrate. Optionally, the upper surface of the tactile sensing structure is also covered with an insulating layer to protect it from environmental contamination. For example, it prevents substances such as water, oil, and dust from contaminating the tactile sensing structure or entering the tactile sensor chip. The insulating layer on the tactile sensing structure is, for example, insulating. The edges of the package housing extend downwards to form a support structure, which supports the package housing when it abuts against the lead frame / package substrate and creates a space between the package housing and the lead frame / package substrate to accommodate the tactile sensing structure and the semiconductor wafer. Optionally, the package housing is formed by injection molding. For example, after the tactile sensing structure and the semiconductor wafer are fixed to the lead frame / package substrate, a mold is provided thereon and the package housing is injection molded.

[0273] Optionally, the tactile sensing structure includes a main plane formed by an array of tactile sensing micro / nano structures and a support portion located at the edge of the main plane. After the packaged housing is attached to the lead frame / package substrate, the support portion of the tactile sensing structure supports the tactile sensing portion relative to the lead frame / package substrate and forms a space for accommodating the semiconductor wafer. Optionally, the support portion transmits part of the force exerted by touch on the tactile sensing structure to the lead frame / package substrate to reduce the magnitude of the force acting on the top metal layer of the semiconductor wafer. The support portion of the tactile sensing structure corresponds to the support portion of the packaged housing. Still optionally, the support portion of the tactile sensing structure also forms a step (see also...). Figure 3C This arrangement allows part of the support portion of the tactile sensing structure to abut against the lead frame / packaging substrate, while another part abuts against the metal region at the edge of the top metal layer of the semiconductor wafer (320 in Figure 3). Thus, the support portion of the tactile sensing structure also forms an electrical connection with the metal layer 320, eliminating the chip manufacturing step of setting up a connection between the tactile sensing structure and the semiconductor wafer. It is understandable that adding a connection between the tactile sensing structure and the semiconductor wafer to provide an electrical connection is also feasible.

[0274] Figure 6 The packaging process flow of a tactile sensor chip according to an embodiment of this application is shown.

[0275] To obtain a tactile sensor chip, a wafer, a tactile sensing structure, and a lead frame and / or a packaging substrate are fabricated. The semiconductor wafer obtained by dicing the wafer is attached to the packaging substrate / lead frame. Optionally, a designated area of ​​the top metal layer of the semiconductor wafer is formed into a pad (PAD), and the PAD is connected to the packaging substrate / lead frame with leads. It is understood that in the preceding embodiments, the metal areas of the top metal layer that form the electrode array and the metal areas that form electrical connections with the tactile sensing structure do not need to form PADs, nor do they need to be connected to the packaging substrate / lead frame with leads. However, it is not excluded that in some embodiments, PADs are formed on some electrodes of the electrode array and / or metal areas at the edges of the top metal layer and connected to the packaging substrate / lead frame with leads.

[0276] Next, the tactile sensing structure is mounted onto the surface of the semiconductor wafer. Optionally, if the edge of the tactile sensing structure has a support portion, the support portion is also abutted against a designated metal area of ​​the semiconductor wafer. Alternatively, the tactile sensing structure and the semiconductor wafer are fixed together by adhesive bonding.

[0277] Then, a package housing is constructed. For example, a package housing encapsulating the tactile sensing structure is formed by injection molding, and the tactile sensing structure is further secured to the package substrate / lead frame. The opening of the package housing is also formed by injection molding. Optionally, the package housing is a prefabricated part and is mounted onto the surface of the tactile sensing structure. The package housing, tactile sensing structure, and package substrate / lead frame are then encapsulated by injection molding, and the gap between the package housing and the tactile sensing structure and package substrate / lead frame is sealed.

[0278] Cut the packaging substrate / lead frame to obtain the packaged tactile sensor chip.

[0279] Figure 7 An exploded view of the components of a tactile sensor chip according to yet another embodiment of this application is shown.

[0280] See Figure 7 A tactile sensor chip includes a semiconductor wafer, a tactile sensing structure, a flexible layer, a packaging shell, and a packaging base. Figure 1B The difference between the tactile sensor chips is that... Figure 7In this embodiment, the tactile sensing structure is in the shape of a metal mesh. The metal mesh-shaped tactile sensing structure can be formed, for example, by a 3D printing process. A flexible layer covers the tactile sensing structure, providing protection and preventing the metal mesh from piercing or cutting the user's skin. The flexible layer is, for example, electrically insulating. Optionally, in addition to applying a force perpendicular to the main plane of the tactile sensing structure, the flexible layer also provides a force at an angle to this perpendicular direction, such that the force has a component parallel to the main plane of the tactile sensing structure. This allows the tactile sensing micro / nanostructure of the tactile sensing structure to deform differently due to forces in multiple directions, thereby facilitating the identification of the occurrence, magnitude, and / or direction of the force generated by touch by measuring changes in capacitance. Besides fixing the tactile sensing structure, a packaging shell is also used to fix the flexible layer. The flexible layer is made of, for example, silicone.

[0281] Figure 7 In the example, the tactile sensing structure includes multiple upward protrusions. These protrusions can be inserted into or squeezed into a flexible layer to fix the flexible layer and the tactile sensing structure. Force components parallel to the main plane of the tactile sensing structure, transmitted by the flexible layer, act on these protrusions, thereby causing deformation of the tactile sensing micro / nanostructure. For example, each tactile sensing micro / nanostructure has one of the aforementioned protrusions, and the protrusion is located at the top of the tactile sensing micro / nanostructure. The lower part of the tactile sensing micro / nanostructure corresponds to the electrodes of the electrode array of the top metal layer of the semiconductor wafer. There is no electrical connection between the corresponding electrodes of the tactile sensing micro / nanostructure and the electrode array, allowing the tactile sensing micro / nanostructure and the electrodes in the electrode array to form a capacitor whose capacitance change can be measured. An insulating layer above the top metal layer of the semiconductor wafer electrically isolates the electrode array from the tactile sensing structure and acts as the dielectric of the capacitor to increase the capacitance value. When the tactile sensing structure is touched, the tactile sensing micro / nanostructure deforms, causing a change in the spacing between the two plates of the capacitor, thereby changing the capacitance value. Touch is sensed by measuring the change in capacitance.

[0282] Figure 8A Showing according to Figure 7 The embodiment of the tactile sensing structure is a tactile sensing micro / nano structure array.

[0283] See Figure 8AThe tactile sensing micro / nanostructure array is mesh-like. Each tactile sensing micro / nanostructure is located around a mesh opening. The tactile sensing micro / nanostructures are spherical or hemispherical. The mesh openings are hollow to reduce the use of metallic materials and make the tactile sensing structure more easily deformable under force, inducing deformation in other tactile sensing micro / nanostructures around the point of force application. Adjacent tactile sensing micro / nanostructures are connected by beams. Multiple beams are also arranged in rows and columns, forming the edges of the mesh openings. The beams extend within the main plane of the tactile sensing structure. For example, a tactile sensing micro / nanostructure may be surrounded by, for example, four mesh openings and four beams, while the mesh openings are surrounded by four tactile sensing microstructures and four beams.

[0284] Although referred to as beams and holes, the beams, holes, and tactile sensing micro / nanostructures can be formed from the same material and molded in one piece using additive manufacturing processes such as 3D printing, without the need for assembly of individual components. Optionally, in different embodiments, the dimensions of the tactile sensing microstructures vary, and the beams connecting adjacent tactile sensing microstructures are correspondingly shortened or even reduced to points. For simplicity, in this application, beams also include structural forms that reduce to points and connect adjacent tactile sensing microstructures in the row / column direction; correspondingly, holes are enclosed by the quarter edges of the four surrounding tactile sensing micro / nanostructures.

[0285] Figure 8B Showing according to Figure 8A A partial magnified view of the tactile sensing micro / nano structure of the embodiment of the tactile sensing structure.

[0286] Figure 8B A partial view of the tactile sensing micro / nanostructure array shows four adjacent tactile sensing micro / nanostructures (810, 812, 814, and 816). These four tactile sensing micro / nanostructures are connected by four beams (820, 822, 824, and 826). The four tactile sensing micro / nanostructures and the four beams together surround a mesh 830. The four tactile sensing micro / nanostructures (810, 812, 814, and 816) are arranged in rows and columns, forming two rows and two columns. The four beams (820, 822, 824, and 826) are also arranged in rows and columns, forming two rows and two columns.

[0287] The surface of the tactile sensing micro-nanostructure has multiple pores. The tactile sensing micro-nanostructure is hollow to reduce the amount of metal material used and enhance its flexibility. Figure 8BIn the diagram, the upper surfaces of the tactile sensing micro / nanostructures (810, 812, 814, and 816) are shown as hemispherical or arc-shaped surfaces. Other upper surface shapes are also optional. Generally, the upper surface of the tactile sensing micro / nanostructure is set as an upwardly convex curved surface. The protrusions on the tactile sensing micro / nanostructure are located at the center of their upwardly convex curved surface, in other words, at the highest point of the upwardly convex curved surface, so that the upwardly convex curved surface can make better contact with the flexible layer. It can be understood that when, for example, the tactile sensing microstructure 812 is deformed by the force of touch, the adjacent tactile sensing microstructures (810, 814, and 816) can also undergo deformation of varying degrees under the influence of the beams (820, 822, 826, and 824). For example, when the force generated by touch is applied to the mesh 830, all four tactile sensing micro / nanostructures (810, 812, 814, and 816) deform. As the force is applied away from the center of the mesh 830, the deformation of each tactile sensing micro / nanostructure (810, 812, 814, and 816) varies. The difference in deformation of the tactile sensing microstructure corresponds to the difference in its capacitance value, which allows the identification of the location, magnitude, and / or direction of the force.

[0288] Figure 8C A partially magnified perspective view of the tactile sensing micro / nano structure according to an embodiment of this application is shown.

[0289] same Figure 8B compared to, Figure 8C The lower shape of the tactile sensing micro / nanostructures (810, 812, 814 and 816) and the electrode groups (840, 842, 844 and 846) of the electrode array corresponding to the tactile sensing micro / nanostructures were also shown. Figure 8C In the example, each electrode group (840, 842, 844, and 846) comprises four electrodes arranged in a 2x2 grid. The tactile sensing micro / nanostructures (810, 812, 814, and 816) are located vertically above the region containing the corresponding electrode group, with the vertical projection of the tactile sensing micro / nanostructure located at the center of the electrode group. Thus, the tactile sensing micro / nanostructure forms a capacitance with each electrode of the corresponding electrode group, resulting in four measurable capacitances from a single tactile sensing micro / nanostructure.

[0290] The lower part of the tactile sensing micro / nanostructure is also hemispherical. Therefore, the overall tactile sensing micro / nanostructure is spherical or consists of two opposing, interlocking hemispheres with their bottom surfaces facing each other. Optionally, the bottom area of ​​the lower hemisphere is smaller than that of the upper hemisphere. Alternatively, the bottom area of ​​the upper hemisphere is larger than the area containing the corresponding electrode assembly, thus providing shielding for the electrode assembly. The lower hemisphere is also hollow, with multiple holes. The overall tactile sensing micro / nanostructure is perforated.

[0291] Figure 8CThe demonstrated tactile sensing micro / nanostructure helps to sense the magnitude and / or direction of the force generated by touch. When the force generated by touch has an angle with the vertical direction, or a component in the direction parallel to the main plane of the tactile sensing structure, this component causes different deformations in the regions where the four electrodes of the corresponding electrode group are located in the upper and lower hemispheres. Consequently, the capacitance or capacitance change of the four capacitors formed by the tactile sensing micro / nanostructure and the electrode group are not identical. Based on this difference, the magnitude and / or direction of the force can be identified, as well as the degree of offset of the point of force application relative to the center of the electrode group.

[0292] Figure 9A Showing according to Figure 7 A three-dimensional diagram of the tactile sensing micro / nano structure of an embodiment.

[0293] Figure 9A The image shows a tactile sensing micro / nanostructure 920, an electrode assembly 940, and a flexible layer 950. Protrusions 927 on the tactile sensing micro / nanostructure 920 extend into the flexible layer 950, causing the component of the force generated by touch parallel to the main plane of the flexible layer to push the protrusions 927 and induce corresponding deformation in the tactile sensing micro / nanostructure 920. Optionally, the protrusions 927 are cylindrical with a small radial dimension, allowing them to be squeezed or embedded into the flexible layer 950 during installation. Alternatively, holes are provided on the lower surface of the flexible layer 950 to accommodate the corresponding protrusions 927, facilitating insertion of the protrusions 927 into the holes during installation and aiding in the alignment of the flexible layer with the tactile sensing micro / nanostructure.

[0294] Figure 9A It also demonstrates that the beams of the tactile sensing structure (e.g., beam 910) are hollow.

[0295] Figure 9B Showing according to Figure 7 A side view of the tactile sensing micro / nano structure of an embodiment.

[0296] Figure 9B This more clearly demonstrates that the protrusions at the top of the tactile sensing micro / nanostructure extend into the flexible layer. The base area of ​​the upper hemisphere of the tactile sensing micro / nanostructure is larger than that of the lower hemisphere. The vertical projections of the centers of the upper and lower hemispheres largely coincide. The top of the lower hemisphere (located below) has a gap rather than electrical contact with the electrodes of the corresponding electrode group. The beam extends along the main plane of the tactile sensing structure.

[0297] Optionally, with Figure 9BUnlike the examples shown, the beams of the tactile sensing structures are arched, bulging upwards in the region between the two tactile sensing micro / nanostructures they connect. This arched structure alters the degree to which the deformation of one tactile sensing micro / nanostructure affects the deformation of adjacent tactile sensing micro / nanostructures, facilitating the identification of the location, magnitude, and / or direction of forces.

[0298] Figures 10A-10G A tactile sensor chip according to yet another embodiment of this application is shown.

[0299] In the preceding embodiments, because the various tactile sensing micro / nanostructures are electrically connected to each other, the overall tactile sensing structure has the same potential. Figure 10A-10G In one embodiment, the tactile sensing structure comprises four electrically isolated portions (1010, 1012, 1014, and 1016). The individual tactile sensing micro / nanostructures within each portion (1010, 1012, 1014, and 1016) are electrically connected to each other, thus having the same potential. There are no electrical connections between the portions (1010, 1012, 1014, and 1016). However, electrical connections can be formed between the portions (1010, 1012, 1014, and 1016) using a switch array within the semiconductor chip.

[0300] Each part of the tactile sensing structure (1010, 1012, 1014, and 1016) is connected to different metal regions of the top metal layer, and then to a switch array in the semiconductor wafer. Through the switch array, each part of the tactile sensing structure (1010, 1012, 1014, and 1016) can be simultaneously connected to ground, or individually connected to ground, a capacitance measurement circuit, or another potential. In one example, two parts of the tactile sensing structure (1010 and 1012) are connected by a switch circuit to two ports (EXEC and CIN) of a capacitance measurement circuit. Thus, the two parts of the tactile sensing structure (1010 and 1012) act as two plates of a capacitor. The capacitance measurement circuit senses the approach (but not contact) of an object in the external environment by measuring the mutual capacitance between the two plates. The two parts of the tactile sensing structure (1010 and 1012) can also be simultaneously connected to ground to provide shielding for the electrode array of the top metal layer, preventing external electromagnetic signals from interfering with the capacitance measurement circuit.

[0301] Optionally, a portion (1010, 1012, 1014, or 1016) or the entirety of the tactile sensing structure can serve as a capacitor plate, forming a capacitor with the entirety or portion of the tactile sensing structure of other tactile sensor chips. This allows for the sensing of the proximity of objects to the tactile sensor chip over a larger spatial range.

[0302] See Figure 10BThe top metal layer of the semiconductor wafer correspondingly includes four regions, each corresponding to an isolated portion of the tactile sensing structure. Optionally, this division of the top metal regions can be purely logical, without the need for a structure on the top metal layer to distinguish these regions.

[0303] See Figure 10D Since there is no electrical connection between the isolated portions 1010 and 1012 of the tactile sensing structure, an insulating portion 1090 is provided between the isolated portions 1010 and 1012. Optionally, the insulating portion 1090 is a gap rather than a physical entity (e.g., an air gap). Support portions 1080 and 1082 at the edge of the tactile sensing structure support the tactile sensing structure to the package electrode / lead frame. Support portions 1084 and 1086 are also provided to support the tactile sensing structure to the semiconductor wafer. Support portions 1084 and 1086 abut against the top metal layer of the semiconductor wafer. Optionally, supports 1080 and 1084 jointly support the isolated portion 1010, while supports 1086 and 1082 jointly support the isolated portion 1012. There is a gap between supports 1084 and 1086 to avoid forming an electrical connection.

[0304] Due to the presence of supports 1084 and 1086, the spacing of the tactile sensing micro / nanostructures near the isolated portions 1010 and 1012 may differ from the spacing of the tactile sensing micro / nanostructures within the isolated portions. Correspondingly, the spacing of the electrodes at corresponding positions of the electrode array in the semiconductor top metal layer also differs from the spacing of the other electrodes.

[0305] Figure 10D The image also shows a support section with multiple support units. See also... Figure 10E The support portion is generally mesh-like. After being attached to the tactile sensing structure, the tactile sensing micro / nanostructure of the tactile sensing structure is exposed through the mesh of the support portion. The portion around the mesh becomes a support unit to limit the deformation range of the tactile sensing micro / nanostructure.

[0306] Corresponding to the four isolated parts of the tactile sensing structure, the support also includes four corresponding grid-like support parts.

[0307] Figure 10F A circuit schematic diagram of a tactile sensor chip according to an embodiment of this application is shown.

[0308] See Figure 10FThe CDC can use different isolated portions of the tactile sensing structure as capacitor plates to construct a capacitor. For example, isolated portions 1010 and 1012 serve as capacitor plates, and the change in capacitance formed by these two capacitor plates is measured to detect the approach of external objects. For example, by connecting isolated portion 1010 to the EXEC port of the CDC (for transmitting excitation signals) and isolated portion 1012 to the CIN port of the CDC (for receiving response signals), the CDC can measure the capacitance. Alternatively, a switch array can connect isolated portions 1010 and 1012 together to the EXEC port to form an electrode plate with a larger area, and connect isolated portions 1014 and 1016 together to the CIN port. By constructing larger capacitor plates, the approach of objects over a larger spatial range can be detected.

[0309] exist Figure 10F In this embodiment, the CDC does not need to be connected to the electrodes of the electrode array on the top metal layer.

[0310] Figure 10G Showing with Figure 10C The corresponding multiple regions of the top metal layer of the semiconductor wafer.

[0311] exist Figure 10G In one embodiment, the metal regions of the top metal layer of the semiconductor wafer include, for example, three types. The first type of metal regions serves as an electrode array, wherein each metal region forms one of the electrodes of the electrode array. The second type of metal regions (1060) are used to form an electrical connection with the tactile sensing structure. Figure 10G In the example, the first type of metal region is further divided into four parts (denoted as 1050, 052, 1054, and 1056 respectively), corresponding to... Figure 10B The tactile sensory structure consists of four electrically isolated parts (1010, 1012, 1014 and 1016).

[0312] Figure 10G In this example, the second type of metal region (1060) is disposed along the edge of the top metal layer of the semiconductor wafer. It is understood that when the tactile sensing structure has multiple electrically isolated portions, the second type of metal region also correspondingly provides multiple regions, thereby allowing each electrically isolated portion of the tactile sensing structure to be electrically connected to the semiconductor wafer individually or collectively. To facilitate the formation of electrical connections, no isolation layer is covered over the second type of metal region (1060). Optionally, the tactile sensing structure is connected to the semiconductor wafer via gold wires; accordingly, a PAD is formed on the second type of metal region, and the gold wires are soldered.

[0313] The third type of metal region (1070, 1072, 1074) is used to form the PAD and is connected to the pins of the tactile sensor chip via gold wires, which is used to electrically connect the semiconductor wafer to the pins of the tactile sensor chip.

[0314] Understandable. Figure 10G The arrangement of various metal areas shown is only an example; different numbers, positions, and / or shapes of metal areas can be arranged as needed.

[0315] Figure 11 An exploded view of various parts of a tactile sensor chip according to yet another embodiment of this application is shown.

[0316] See Figure 11 The tactile sensor chip includes a semiconductor wafer, a piezoelectric material film, an adhesive film, a packaging shell, and a packaging base. Figure 1B or Figure 7 The difference between the tactile sensor chips is that... Figure 11 In one embodiment, the tactile sensor chip does not use a tactile sensing structure, but is replaced by a piezoelectric material film.

[0317] The piezoelectric material film is attached to the top metal layer of the semiconductor wafer via an adhesive film. The package housing secures the piezoelectric material film and the semiconductor wafer to the package electrode / lead frame.

[0318] Piezoelectric materials accumulate electrical charges on their surface when subjected to pressure. The magnitude of these charges can be detected to determine the amount of pressure applied to the piezoelectric material. Figure 11 In this embodiment, the lower surface of the piezoelectric material film (the surface facing the top metal layer of the semiconductor wafer) includes a plurality of charge-sensing electrodes formed of piezoelectric material. The plurality of charge-sensing electrodes are arranged in rows and columns, corresponding one-to-one with the electrodes of the electrode array of the top metal layer. When the piezoelectric material film is attached to the top metal layer, the charge-sensing electrodes and their corresponding electrodes are spatially opposite and close, and their projections in a direction perpendicular to the main plane of the semiconductor wafer largely coincide. Thus, the induced charge formed on the charge-sensing electrodes acts on the electrodes, allowing the pressure to be sensed by measuring the amount of induced charge through the electrodes. Optionally, there is a gap between the charge-sensing electrodes. Optionally, the area of ​​the charge-sensing electrode is substantially the same as the area of ​​the electrodes of its corresponding electrode array, or the area of ​​the charge-sensing electrode is larger than that of its corresponding electrode.

[0319] The upper surface of the piezoelectric material film includes a surface electrode. The surface electrode is, for example, layered and, for example, integrally covers the upper surface of the piezoelectric material film. The surface electrode serves to provide, for example, a ground plane and acts as a shield. The surface electrode is connected to, for example, a second type of metal region (1060, see also) of the top metal layer. Figure 10CA dielectric exists between the surface electrode and the charge-sensing electrode, thus there is no electrical connection between them, and each charge-sensing electrode forms a capacitance. Under the force of the touch to be sensed on the piezoelectric film, the film deforms, causing charge to accumulate on the charge-sensing electrode at the location of the force, and altering the spatial shape between the piezoelectric film and the electrodes of the electrode array at that location.

[0320] An adhesive film is used to attach a piezoelectric material film to the top metal layer. Multiple pores are formed on the adhesive film, the position and shape of which allow the charge-sensing electrode to adhere to and form an electrical connection with the corresponding electrode on the top metal layer. Correspondingly, no isolation layer is provided on the top metal layer, or in the electrode array region or electrode location region of the top metal layer, to facilitate the electrical connection between the electrodes of the top metal layer and the charge-sensing electrode.

[0321] Because the adhesive film has thickness, a gap may exist between the charge-sensing electrode of the piezoelectric material film and the corresponding electrode of the top metal layer. This gap is understood to be caused by the manufacturing process and is difficult to eliminate. Therefore, the presence or absence of this gap is uncertain. Since the adhesive film is thin and compressible, and both the charge-sensing electrode and the electrode of the top metal layer may slightly protrude from the main plane of their structure, in some cases, even with the thickness of the adhesive film, the charge-sensing electrode and the electrode of the top metal layer can adhere and form an electrical connection, in which case the gap does not exist. When the piezoelectric material film is subjected to pressure, this gap will decrease or disappear. When the gap exists, it acts as a dielectric, causing the charge-sensing electrode and the electrode of the top metal layer to act as capacitor plates, forming a capacitor (called the lower capacitor). The charge-sensing electrode and the surface electrode of the piezoelectric material film also act as capacitor plates, forming another capacitor (called the upper capacitor). The upper and lower capacitors are connected in series. When the gap does not exist, the charge-sensing electrode and the electrode of the top metal layer are electrically connected, thus acting as capacitor plates together with the surface electrode of the piezoelectric material film to form a capacitor.

[0322] Regardless of whether the gap exists, Figure 11In the embodiments described, the circuit for measuring capacitance located in the semiconductor wafer can identify the presence of a touch by measuring the capacitance value. When a force caused by a touch is applied, the spatial shape between the electrodes of the piezoelectric material film and the top metal layer changes. If the gap did not exist before the touch, the pressure causes a change in the capacitance value formed by the surface electrodes of the piezoelectric material film and the electrodes of the top metal layer; this change is detected to identify a touch. If the gap existed before the touch and the pressure causes the gap to disappear, the previously series-connected upper and lower capacitors become a single capacitor, and its capacitance value changes; this change is detected to identify a touch. If the gap existed before the touch and remains after pressure, but deformation causes a change in the capacitance value of either the upper or lower capacitor, or one of them, resulting in a change in the overall series-connected capacitance value, this change is detected to identify a touch.

[0323] An adhesive film is optional. In some embodiments, an adhesive film is not used; instead, the piezoelectric material film is fixed to the surface of the semiconductor wafer by the packaging housing.

[0324] It is understandable that under the influence of force, charge accumulates on the charge-sensing electrodes. This charge affects the measured capacitance value, thus changing the measured capacitance. However, the charge generated by piezoelectricity changes over time, and this change occurs within a relatively short period. Therefore, even if the touch persists, the charge generated by piezoelectricity will still change. In contrast, the capacitance change caused by the change in the spatial shape between the capacitor plates is unaffected by time. Therefore, detecting the temporal distribution of capacitance changes helps in more effectively identifying touches.

[0325] Alternatively, under the influence of force, the charge accumulated on the charge-sensing electrodes can be identified individually, without having to measure capacitance. For example, the accumulated charge generates a potential change, and the charge loss process forms a current. By measuring the potential (voltage) or current through the electrodes of the top metal layer, the presence of a force acting on the piezoelectric film can be detected. Furthermore, the location of the touch acting on the piezoelectric film can be identified based on which electrode(s) in the top metal layer exhibit a specified or changing potential (voltage) or current. Accordingly, circuits for measuring voltage and / or current are provided in the semiconductor wafer to detect this potential (voltage) or current.

[0326] Alternatively, the semiconductor chip may include one or more circuits for measuring capacitance, voltage, or current to sense the size, orientation, and / or position of a touch by measuring different physical quantities.

[0327] Alternatively, a single circuit for measuring voltage can be used to measure capacitance in addition to measuring the potential (voltage) or current generated by piezoelectric induction. The principle of using a voltage-measuring circuit to measure capacitance is existing technology. Similarly, a single circuit for measuring current can be used to measure capacitance in addition to measuring the potential (voltage) or current generated by piezoelectric induction.

[0328] Alternatively, when the semiconductor wafer includes any two or three of the circuits for measuring capacitance, voltage, and current, the input ports of these circuits are connected to a switch array. The switch array connects the electrodes of the top metal layer to different measurement circuits in a time-division multiplexing manner. Thus, the measurement of more physical quantities can be achieved without adding additional electrodes to the top metal layer or adding wiring between the electrodes and the switch array. In other words, the electrodes of the top metal layer are used to measure both capacitance and induced charge.

[0329] Furthermore, in some applications, induced charge and capacitance are measured sequentially for different purposes. In one embodiment, the semiconductor wafer includes circuits for measuring voltage and circuits for measuring capacitance. Typically, the circuit for measuring capacitance is in sleep mode to reduce power consumption, while the circuit for measuring voltage remains on and measures the presence of induced charge. When the tactile sensor is subjected to pressure, charge accumulates on one or more charge-sensing electrodes, causing a potential change. The circuit for measuring voltage identifies the presence of pressure and, in response, activates the circuit for measuring capacitance. The circuit for measuring capacitance allows for better identification of the magnitude and direction of the force caused by the touch.

[0330] Figure 11 In some embodiments, the tactile sensor chip may also include a common ground conductive layer and conductive double-sided adhesive.

[0331] The common-ground conductive layer is located on the upper surface of the piezoelectric material film, and is attached to the surface electrodes of the piezoelectric material film to form an electrical connection. The common-ground conductive layer is connected to ground, thereby providing shielding for the piezoelectric material film and semiconductor wafer underneath, reducing or eliminating interference from environmental electromagnetic noise. Optionally, the common-ground conductive layer also serves functions such as dustproofing, waterproofing, oilproofing, impact resistance, wear resistance, and heat dissipation.

[0332] Conductive double-sided adhesive tape is used to connect Class II metal areas (1060, see also) Figure 10C A piezoelectric material film is used. For example, the surface electrode of the piezoelectric material film is connected to a second type of metal region. The adhesive film is insulating, while the conductive double-sided adhesive is conductive. Optionally, the conductive double-sided adhesive bonds the edge of the second type of metal region to a common conductive layer, which in turn forms an electrical connection with the surface electrode. Optionally, there is a gap between the conductive double-sided adhesive and the adhesive film to avoid forming an electrical connection. The shape of the conductive double-sided adhesive is, for example, consistent with the shape of the second type of metal region. Figure 11In the example, the conductive double-sided tape is in the shape of a rectangular frame.

[0333] Figure 12 A surface view of a piezoelectric material film according to an embodiment of this application is shown.

[0334] Figure 12 The left side shows the upper surface of the piezoelectric material film, while the right side shows the lower surface of the piezoelectric material film.

[0335] Figure 12 In this example, the entire upper surface of the piezoelectric film covers the surface electrode. Completely covering the surface electrode provides better shielding. The surface electrode can have other shapes. The surface electrode can be used to bond with a common ground conductive layer.

[0336] Figure 12 In this example, the charge-sensing electrodes on the lower surface of the piezoelectric material film are arranged in rows and columns to form a charge-sensing electrode array. Each charge-sensing electrode is located at a specific position, which identifies the location where force is applied to the piezoelectric material film. Each charge-sensing electrode in the array corresponds one-to-one with an electrode in the electrode array of the top metal layer. After the piezoelectric material film is bonded to the semiconductor wafer, the charge-sensing electrodes and their corresponding electrodes in the top metal layer are spatially opposite each other. There are gaps between the charge-sensing electrodes in the charge-sensing electrode array.

[0337] Figure 13A , Figure 13B and Figure 13C Showing according to Figure 11 A perspective view of an embodiment of this application.

[0338] To clearly distinguish Figure 11 The adhesive film and conductive double-sided adhesive of the tactile sensor chip in the embodiment are in Figure 13A The adhesive film is displayed while the conductive double-sided adhesive is hidden, and in... Figure 13B The conductive double-sided adhesive is shown separately while the adhesive film is hidden. Figure 13C The image shows both adhesive film and conductive double-sided adhesive.

[0339] See Figure 13A For example, the adhesive film is in the form of a mesh. The adhesive film includes multiple pores. The positions of the pores correspond to the charge-sensing electrodes of the piezoelectric material film and the electrodes of the top metal layer, allowing the charge-sensing electrodes and their corresponding electrodes in the top metal layer to pass through the pores and achieve electrical connection. The position of the adhesive film corresponds to the electrode array of the top metal layer (i.e., the location of the first type of metal region).

[0340] See Figure 13BFor example, the conductive double-sided adhesive is rectangular in shape. The conductive double-sided adhesive bonds the edge region of the top metal layer (i.e., the location of the second type of metal region) to the edge region of the common ground conductive layer, thereby forming an electrical connection between the common ground conductive layer and the second type of metal region.

[0341] See Figure 13C For example, the adhesive layer is located within the rectangular frame of the conductive double-sided adhesive, with a gap between them to avoid interference. The second type of region of the top metal layer is electrically connected to the common ground conductive layer via the conductive double-sided adhesive, and the common ground conductive layer is electrically connected to the surface electrode on the upper surface of the piezoelectric material film. The encapsulation housing is attached to the common ground conductive layer, which presses the piezoelectric material film, and in turn, presses the adhesive layer, the conductive double-sided adhesive, and the semiconductor wafer.

[0342] Figure 14 Showing according to Figure 11 A cross-sectional view of the tactile sensing chip according to an embodiment of this application.

[0343] Figure 14 The image shows a common ground conductive layer, a piezoelectric material film, an adhesive layer / conductive double-sided adhesive, a semiconductor wafer, and a packaging substrate stacked from top to bottom. The adhesive layer and the conductive double-sided adhesive are roughly in the same position in the vertical direction and are both attached to the surface of the semiconductor wafer. The conductive adhesive is located at the edge of the top metal layer of the semiconductor wafer and is used to bond the second type of metal region to the common ground conductive layer. The adhesive layer is located inside the conductive double-sided adhesive and is used to bond the piezoelectric material film. As an example, the area of ​​the piezoelectric material film is smaller than that of the common ground conductive layer, so that after the common ground conductive layer covers the piezoelectric material film, the edge portion of the common ground conductive layer is exposed relative to the piezoelectric material film and can be bonded to the conductive double-sided adhesive.

[0344] Figure 14 It also shows that the charge-sensing electrode on the lower surface of the piezoelectric material film and the corresponding electrode on the top metal layer are roughly in the same position in the left-right direction, and the corresponding pore in the adhesive layer is also in the same position.

[0345] The package housing is located outside the edge of the common ground conductive layer and snaps onto the common ground conductive layer from top to bottom. Chip pins are disposed on the package substrate. The package housing also secures the chip pins to the package substrate.

[0346] Figure 15 Showing according to Figure 11 The packaging process flow of the tactile sensor chip in the embodiments of this application.

[0347] To obtain a tactile sensor chip, a packaging substrate, a semiconductor wafer, a piezoelectric material film, an adhesive film, a conductive double-sided adhesive, and a common ground conductive layer are fabricated. The semiconductor wafer is then fixed to the packaging substrate.

[0348] Next, the conductive double-sided adhesive is bonded to the second type of metal region of the semiconductor wafer. Then, the adhesive film is bonded to the first type of metal region of the semiconductor wafer. It can be understood that the order in which the adhesive film and the conductive double-sided adhesive are bonded can be interchanged.

[0349] Next, the piezoelectric material film is bonded to the top metal layer of the semiconductor wafer using an adhesive film.

[0350] Next, a common ground conductive layer is applied over the piezoelectric material film, and the common ground conductive layer is bonded to the second type of metal region using conductive double-sided adhesive.

[0351] Next, the package housing is formed. For example, the package housing is formed by injection molding, which fixes the ground conductive layer, the piezoelectric material film and the semiconductor wafer, and fuses them together with the package substrate.

[0352] A tactile sensor chip according to another embodiment of this application includes both a tactile sensing structure and a piezoelectric material film. The piezoelectric material film is located between the tactile sensing structure and the top metal layer of the semiconductor wafer.

[0353] See also Figure 1B and Figure 7 The demonstrated tactile sensor chip has no direct electrical contact between the tactile sensing structure and the top metal layer. Therefore, the electrodes of the tactile sensing structure and the top metal layer form a capacitor. The insulating layer or air between the tactile sensing structure and the top metal layer serves as the dielectric of the capacitor. In embodiments of the tactile sensor chip that include both the tactile sensing structure and the piezoelectric material film, the piezoelectric material film also serves as the dielectric of the capacitor, thereby increasing the capacitance value and helping to improve the sensitivity of capacitance measurement.

[0354] The surface electrode on the upper surface of the piezoelectric material film and the tactile sensing structure are respectively connected to the semiconductor wafer, rather than forming a direct electrical connection. Optionally, an electrical connection is formed between the surface electrode on the upper surface of the piezoelectric material film and the tactile sensing structure. Still optionally, no surface electrode is provided on the upper surface of the piezoelectric material.

[0355] The charge-sensing electrodes on the lower surface of the piezoelectric material film correspond one-to-one with the electrodes of the electrode array in the top metal layer. Optionally, the charge-sensing electrodes on the lower surface of the piezoelectric material film are in contact with the electrodes of the electrode array in the top metal layer and form an electrical connection. No electrical connection is formed between the charge-sensing electrodes on the lower surface of the piezoelectric material film and the surface electrodes (if present) on the upper surface of the piezoelectric material film.

[0356] In one example, the upper surface of the piezoelectric film lacks surface electrodes, and the tactile sensing structure acts as one of the capacitor's plates. The charge-sensing electrode on the lower surface of the piezoelectric film, along with the corresponding electrode of the electrode array in the top metal layer, forms the other plate of the capacitor. The portion of the piezoelectric film excluding the charge-sensing electrode serves as the capacitor's dielectric. The occurrence, location, magnitude, and / or direction of a touch are identified by detecting changes in this capacitance.

[0357] In one example, the surface electrode on the upper surface of the piezoelectric material film and the tactile sensing structure together serve as one of the plates of the capacitor, while the charge sensing electrode on the lower surface of the piezoelectric material film and the corresponding electrode of the electrode array of the top metal layer form the other plate of the capacitor.

[0358] In another example, the surface electrode on the upper surface of the piezoelectric material film is suspended, the tactile sensing structure acts as one of the plates of the capacitor, and the charge sensing electrode on the lower surface of the piezoelectric material film and the corresponding electrode of the electrode array of the top metal layer form the other plate of the capacitor.

[0359] In another example, a gap exists between the charge-sensing electrode on the lower surface of the piezoelectric material film and the corresponding electrode of the electrode array in the top metal layer. The tactile sensing structure acts as one of the plates of the upper capacitor, the charge-sensing electrode on the lower surface of the piezoelectric material film acts as the other plate of the upper capacitor, and also as one of the plates of the lower capacitor. The corresponding electrode of the electrode array in the top metal layer acts as the other plate of the lower capacitor, and the upper and lower capacitors are connected in series. Touch is identified by detecting the overall capacitance change of the series-connected upper and lower capacitors.

[0360] In another example, pressure can be sensed via charge-sensing electrodes on a piezoelectric film, eliminating the need for a tactile sensing structure (although this structure is present in the chip). For instance, pressure can be sensed by measuring the amount of charge on the corresponding charge-sensing electrodes via an electrode array in the top metal layer using a voltage-measuring circuit in the semiconductor wafer. In this case, the tactile sensing structure can be grounded.

[0361] In another example, pressure is sensed by measuring the charge on the charge-sensing electrodes of the piezoelectric film, and touch is sensed by measuring the capacitance formed by the tactile sensing structure. For instance, the electrodes of the electrode array in the top metal layer are first connected to an analog-to-digital converter (ADC) to measure the amount of charge on the charge-sensing electrodes, and then the electrodes of the electrode array are connected to a capacitance-to-digital converter (CDC) to measure the capacitance formed by the electrodes of the electrode array and the tactile sensing structure.

[0362] In the above-described embodiment of the tactile sensor chip that includes both a tactile sensing structure and a piezoelectric material film, the advantages of a capacitance-based tactile sensor (e.g., better at recognizing the direction of a touch) can be obtained through the tactile sensing structure, while the advantages of a piezoelectric-based tactile sensor (e.g., faster recognition of the presence of pressure) can be obtained through the piezoelectric material film. Furthermore, there is no need to add more leads to the tactile sensor chip to connect the semiconductor wafer and external components (including the tactile sensing structure and the piezoelectric material film), thereby reducing manufacturing costs and complexity.

[0363] Figure 16A A circuit schematic diagram of a tactile sensor chip according to an embodiment of this application is shown.

[0364] Figure 16A In one embodiment, the tactile sensor chip includes a piezoelectric material film but does not include a tactile sensing structure.

[0365] A tactile sensor chip includes circuitry formed in a semiconductor wafer for measuring analog quantities. Figure 16A The diagram shows an ADC (analog-to-digital converter) and a CDC (capacitor-to-digital converter), a switch array, and an optional semiconductor amplifier.

[0366] The charge-sensing electrode on the lower surface of the piezoelectric film is coupled to the electrodes of the electrode array in the top metal layer, thereby coupling the charge-sensing electrode to a switching array, which in turn connects it to, for example, an ADC. Due to the presence of the adhesive film and process errors in semiconductor manufacturing, there may be an electrical connection or a gap between the charge-sensing electrode and the corresponding electrode in the electrode array. In either case, the charge accumulated on the charge-sensing electrode under force affects the electrodes of the electrode array, for example, by forming a current or changing the potential. Thus, the presence of pressure is sensed by measuring the corresponding electrical signal using the ADC. Optionally, the electrical signal on the electrodes of the electrode array is amplified by a semiconductor amplifier to facilitate its sensing. The semiconductor amplifier can be implemented by a single MOS and is spatially located below the electrodes of the electrode array inside the semiconductor wafer, manufactured by semiconductor processes without significantly increasing the manufacturing cost of the semiconductor wafer. Thus, there can be multiple semiconductor amplifiers, each corresponding one-to-one with the electrodes of the electrode array.

[0367] The switch array selectively connects the ADC and the CDC. Thus, the ADC and CDC can be connected to the same electrodes of the electrode array in a time-division multiplexing manner. Optionally, the ADC and CDC can also be connected to different electrodes of the electrode array simultaneously.

[0368] exist Figure 16AIn this embodiment, the surface electrode (and optionally, a common conductive layer connected thereto) on the upper surface of the piezoelectric material film serves as one of the plates of the capacitor, and the electrode of the top metal layer (and optionally, a charge-sensing electrode connected thereto) serves as the other plate of the capacitor. The electrodes of the electrode array are connected to the CDC via a switch array (and optionally an amplifier), allowing the CDC to measure the capacitance formed by the material as plates.

[0369] Figure 16B A circuit schematic of a tactile sensor chip according to yet another embodiment of this application is shown.

[0370] exist Figure 16B In this embodiment, the tactile sensor chip includes a tactile sensing structure, a piezoelectric material film, and a semiconductor wafer stacked from top to bottom. Optionally, no surface electrode is disposed on the upper surface of the piezoelectric material. The tactile sensing micro / nanostructure of the tactile sensing structure, the charge-sensing electrode on the lower surface of the piezoelectric material film, and the electrodes of the electrode array in the top metal layer correspond one-to-one and are arranged in the vertical direction, with their projections largely overlapping in that direction. Optionally, the area of ​​each of the tactile sensing micro / nanostructure and the charge-sensing electrode can be larger than the area of ​​the electrodes in the electrode array.

[0371] The tactile sensing structure is grounded, for example, through a switch array. Each electrode of the electrode array is connected to the switch array via an optional semiconductor amplifier. The switch array is connected to an ADC, a CDC, and ground. The ADC measures the amount of charge accumulated on the charge-sensing electrodes and also measures the capacitance formed by the electrodes of the electrode array and the tactile sensing micro / nanostructure.

[0372] Figure 17A and Figure 17B A tactile sensor assembly according to another embodiment of this application is shown.

[0373] Chips are typically soldered onto PCBs (printed circuit boards) for use in electronic products. However, the thickness of the stacked PCBs and chips is difficult to reduce, thus limiting their application scenarios. For example, the space available to accommodate electronic devices in the fingers of bionic robots is limited, or the thickness of the skin used as skin for bionic robots is also limited.

[0374] exist Figure 17A and Figure 17BIn this embodiment, the packaging substrate of the tactile sensor chip is eliminated, so the thickness of the tactile sensor chip is defined by the lead frame, semiconductor wafer, tactile sensing structure / piezoelectric film, and packaging shell, and can be further reduced. The pins on the lead frame are connected to one end of an FPC (flexible printed circuit board). An electrical connector is located at the other end of the FPC. Thus, at the location of the tactile sensor, since there is no packaging substrate and printed circuit board, the thickness can be very thin. Such a tactile sensor can be placed, for example, at the fingertip, or within a biomimetic skin structure. The thickness of the FPC is also very thin, even less than the thickness of the tactile sensor chip, allowing it to extend along the biomimetic skin structure. For connection reliability and insertion / removal cycles, the electrical connector requires a certain mechanical strength and size. The electrical connector is positioned away from the tactile sensor chip and has sufficient space to accommodate a large-sized electrical connector, such as near power supplies, processor cores, etc.

[0375] Figure 17A and Figure 17B In one embodiment, the lead frame width of the tactile sensor chip is greater than that of the FPC. In an alternative embodiment, the lead frame may be further removed. Accordingly, the semiconductor wafer is directly mounted on the FPC. The tactile sensing structure and / or piezoelectric material film are fixed on the semiconductor wafer. Optionally, the package housing is also removed; instead, adhesive is applied around the tactile sensing structure to fix the tactile sensing structure to the semiconductor wafer on the FPC. If a piezoelectric material film is used, it is located between the tactile sensing structure and the semiconductor wafer, so that the adhesive-fixed tactile sensing structure presses the piezoelectric material film onto the semiconductor wafer. An adhesive film and conductive double-sided adhesive can also be used to fix the piezoelectric material film and the common conductive layer to the semiconductor wafer. Optionally still, pads are provided on a third type of metal region of the top metal layer, and the pads on the metal region are connected to the pads on the FPC by gold wires, and the gold wires are also fixed with adhesive. To connect the third type of metal region with gold wires, the shape of the tactile sensing structure / piezoelectric material film is designed to avoid covering or obscuring the third type of metal region, thereby reserving space for connecting the gold wires.

[0376] Figure 18A , 18B 18C illustrates a tactile sensor chip according to another embodiment of this application.

[0377] According to the embodiments of this application disclosed above, by utilizing electrodes formed on the top metal layer of a semiconductor wafer as capacitor plates, the accuracy of the capacitance-based tactile sensor is significantly improved, and positional accuracy of 1mm can be easily achieved. 2Even higher density tactile sensors are possible. However, for applications such as biomimetic robots, tactile sensors need to be implemented over a larger area (e.g., simulating human hand skin). This can be achieved by manufacturing semiconductor wafers with a larger area. However, the cost of semiconductor wafers is directly proportional to their area; as the area increases, the cost increases significantly, and the yield decreases. Therefore, in... Figures 18A-18C One embodiment increases the tactile sensing area by encapsulating multiple semiconductor wafers within a sensor chip, while avoiding a sharp increase in cost. Each semiconductor wafer can have a small size and standardized dimensions to suit mass production.

[0378] See Figure 18A The provided tactile sensor chip encapsulates four semiconductor wafers. A single tactile sensing structure covers the top metal layer of the four semiconductor wafers. For each semiconductor wafer, each electrode of the electrode array formed by the metal region on its top metal layer has a corresponding tactile sensing micro / nano structure on the tactile sensing structure. Thus, compared to the previous embodiment, the area of ​​the provided tactile sensor chip can be increased or changed without changing the semiconductor wafers, while keeping the amount of capacitance provided per unit area for sensing touch substantially unchanged. The four semiconductor wafers are carried by the same packaging substrate. The space formed by the packaging substrate and the packaging housing accommodates the four semiconductor wafers and the tactile sensing structure. The packaging housing includes an opening, and the packaging housing and the tactile sensing structure are pressed and fixed together, with the upper surface of the tactile sensing structure exposed through the opening in the packaging housing. The chip's pins are connected to one or more of the four semiconductor wafers.

[0379] As an example, the four semiconductor wafers of the tactile sensor chip are placed side by side, with their respective principal planes parallel and coplanar. The edges of some semiconductor wafers are adjacent to those of others. It is understood that other numbers of semiconductor wafers may be packaged within the tactile sensor chip. Various spatial arrangements of these semiconductor wafers are applicable to the embodiments of this application. For example, these semiconductor wafers may be arranged in an array pattern, a ring, a line, etc. These semiconductor wafers may also be arranged in three-dimensional space.

[0380] Optionally, each of these semiconductor wafers operates independently, for example, by independently measuring capacitance through electrodes on its top metal layer, without relying on other semiconductor wafers. Still optionally, these semiconductor wafers operate simultaneously or in parallel, so that multiple capacitances can be detected at the same time to identify multi-touch or proximity.

[0381] Optionally, these semiconductor wafers are electrically connected and can transmit analog and / or digital signals. For example, the semiconductor wafers also include analog signal ports for connecting to analog signal ports of other semiconductor wafers, thereby transmitting analog signals across multiple semiconductor wafers. Electrodes formed by the top metal layers of the respective semiconductor wafers can then be combined to form capacitors of various shapes and sizes to enhance the ability to sense touch or proximity. This allows a CDC / ADC within a single semiconductor wafer to measure capacitance, voltage, or other analog signals via multiple electrodes formed by the top metal layers of the respective semiconductor wafers.

[0382] Optionally, the analog signal port is used to transmit analog signals from its respective tactile sensor chip to the outside of its respective tactile sensor chip. For example, two or more tactile sensor chips according to embodiments of this application are interconnected through the analog signal port, thereby transmitting analog signals across multiple tactile sensor chips. Thus, electrodes formed by the top metal of the semiconductor wafers of the multiple tactile sensor chips can be combined to form capacitors with diverse shapes / sizes to increase the ability to sense touch or proximity.

[0383] Optionally, the tactile sensing structure comprises multiple (e.g., four) non-overlapping parts, each corresponding to one of the semiconductor wafers, with the projection of each part covering its corresponding semiconductor wafer. Electrical connections may or may not exist between the parts of the tactile sensing structure, or their presence or absence may be dynamically configured by the semiconductor wafer. When electrical connections exist between the parts of the tactile sensing structure, the entire structure has the same potential and can serve as one of the capacitor plates. When no electrical connections exist between the parts of the tactile sensing structure, each part may have different potentials and can each serve as a capacitor substrate, forming a capacitor. Thus, based on the capacitance formed between the parts of the tactile sensing structure, the semiconductor wafer can measure or sense the external environment or its changes.

[0384] See Figure 18B A tactile sensor chip includes multiple tactile sensing structures. For example, Figure 18B The image illustrates tactile sensing structures 1 and 2. Tactile sensing structure 1 covers semiconductor wafers 0 and 1, while tactile sensing structure 2 covers semiconductor wafers 2 and 3. Thus, each electrode of the electrode array formed by the metal region on the top metal layer of each semiconductor wafer 0 / 1 corresponds to one of the tactile sensing micro / nano structures of tactile sensing structure 1. Similarly, each electrode of the electrode array formed by the metal region on the top metal layer of each semiconductor wafer 2 / 3 corresponds to one of the tactile sensing micro / nano structures of tactile sensing structure 2. It is understood that a tactile sensor chip may include other numbers of tactile sensing structures.

[0385] Optionally, multiple tactile sensing structures are electrically isolated from each other. Each tactile sensing structure is connected to a different metal region of the top layer metal of a semiconductor wafer, or to a different semiconductor wafer, so that the circuitry of the semiconductor wafer can control the potential of each tactile sensing structure for capacitance measurement.

[0386] See Figure 18C The tactile sensor chip also includes an interposer. The interposer provides electrical connections between multiple semiconductor wafers. For example, semiconductor wafers are disposed on the interposer, and the semiconductor wafers are electrically connected to the interposer via, for example, bumps. Complex wiring can be formed within the interposer to support multi-signal, high-speed interconnects between multiple semiconductor wafers. Alternatively, an interposer can be omitted, and electrical connections can be provided between semiconductor wafers via, for example, wire bonding. The pins of the tactile sensor chip can be connected to either the interposer or the semiconductor wafer.

[0387] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A tactile sensor assembly, comprising a tactile sensing structure, a circuit board, a semiconductor wafer, and a connector; The tactile sensing structure includes a tactile sensing micro / nano structure array, which comprises multiple tactile sensing micro / nano structures. The tactile sensing micro / nano structure deforms under the force exerted by the touch to be sensed. The top metal layer of the semiconductor wafer forms multiple metal regions, and the multiple first metal regions of the multiple metal regions serve as an electrode array, the electrode array including multiple electrodes; Each of the plurality of electrodes corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; or The plurality of electrodes form a group of N electrodes, and each electrode group corresponds one-to-one with each of the plurality of tactile sensing micro-nano structures, where N is a positive integer greater than or equal to 2. The multiple metal regions of the top metal layer also include second metal regions that do not belong to the multiple first metal regions; Under the force of the touch to be sensed on the tactile sensing structure, one or more of the multiple tactile sensing micro-nano structures deform, causing the spatial shape between the deformed tactile sensing micro-nano structure and its corresponding electrode or electrode group to change. The semiconductor wafer has an electrical switch array and a circuit for measuring capacitance formed in the MOS layer and multiple intermediate layers; the multiple electrodes and the tactile sensing structure form multiple first capacitors, wherein each of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor. The circuit for measuring capacitance is used to measure the capacitance value of the plurality of first capacitors; The plurality of electrodes and the second metal region are coupled to the switch array; The switch array is connected to the circuit for measuring capacitance; The connector is fixed to the circuit board, and the semiconductor wafer is electrically connected to the connector through the circuit board.

2. The tactile sensor assembly according to claim 1, wherein... The semiconductor wafer is fixed to the circuit board.

3. The tactile sensor assembly according to claim 1 further includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame being used to support the semiconductor wafer, and the packaging substrate and / or the lead frame being electrically connected to the circuit board.

4. The tactile sensor assembly according to any one of claims 1-3, wherein, The circuit board is a flexible circuit board.

5. The tactile sensor assembly according to any one of claims 1-4, wherein The tactile sensing structure includes a first support portion; The first support portion of the tactile sensing structure is located around the tactile sensing micro / nano structure array, and is used to abut against the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame, forms a space for accommodating the semiconductor wafer.

6. The tactile sensor assembly according to any one of claims 1-4, wherein The tactile sensing structure includes a second support portion; The second support portion of the tactile sensing structure includes multiple support units, each of which corresponds one-to-one with each of the multiple tactile sensing micro / nano structures. Each support unit abuts against the semiconductor wafer and limits the deformation range of its corresponding tactile sensing micro / nanostructure.

7. The tactile sensor assembly according to any one of claims 1-4, wherein The package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the array of tactile sensing micro / nano structures.

8. The tactile sensor assembly according to any one of claims 1-7, wherein The projection of each tactile sensing micro / nanostructure in the first direction covers its corresponding electrode or electrode group; and / or The area of ​​each tactile sensing micro / nano structure is larger than that of its corresponding electrode or electrode group.

9. The tactile sensor assembly according to any one of claims 1-7, comprising a plurality of said semiconductor wafers; The semiconductor wafers are spatially adjacent; Each of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures; Alternatively, each of the N electrodes of the plurality of semiconductor wafers forms a group, and each electrode group corresponds one-to-one with each of the plurality of tactile sensing micro / nanostructures.

10. The tactile sensor assembly of claim 9, wherein, Multiple semiconductor wafers are interconnected to transmit analog and / or digital signals.

11. The tactile sensor assembly according to any one of claims 1-10, wherein The tactile sensing structure includes a first part and a second part; The plurality of semiconductor wafers include the first semiconductor wafer and the second semiconductor wafer.

12. The tactile sensor assembly of claim 11, wherein, The first portion is electrically connected to the second metal region of the first semiconductor wafer, and the second portion is electrically connected to the second metal region of the second semiconductor wafer; There is no electrical connection between the first part and the second part.

13. The tactile sensor assembly of claim 12, wherein... The first part and the second part each include non-overlapping portions of the plurality of tactile sensing micro / nano structures; or The first part includes the plurality of tactile sensing micro / nanostructures, and the second part includes a conductive structure isolated from the plurality of tactile sensing micro / nanostructures.

14. The tactile sensor assembly according to any one of claims 11-13, wherein The first portion and the second portion form a second capacitor, wherein the first portion and the second portion respectively serve as one of the two plates of the second capacitor; or The first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

15. The tactile sensor assembly according to any one of claims 1-10, wherein The tactile sensing structure comprises multiple parts; The plurality of parts of the tactile sensing structure each include non-overlapping portions of the plurality of tactile sensing micro / nano structures; there is no electrical connection between the plurality of parts of the tactile sensing structure.

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