Cellular structure for silicon carbide power device and preparation method thereof

By introducing Schottky contacts and PiN diode structures into silicon carbide power devices, combined with high-k dielectric and wide bandgap semiconductor filling, the reverse recovery characteristic problem of silicon carbide power devices is solved, achieving high withstand voltage, low on-resistance and excellent switching characteristics.

CN121924813APending Publication Date: 2026-04-24GUANGDONG XINYUENENG SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG XINYUENENG SEMICON CO LTD
Filing Date
2026-01-26
Publication Date
2026-04-24

AI Technical Summary

Technical Problem

Existing silicon carbide power devices have poor reverse recovery characteristics, which leads to increased switching losses and severe voltage overshoot. The high rate of change of reverse recovery current spikes also affects electromagnetic interference.

Method used

In the cellular structure of silicon carbide power devices, a superjunction structure is formed by creating a Schottky contact between the source metal extension and the epitaxial layer, and forming a PiN diode with the connection region, epitaxial layer, and substrate. This is combined with a high-k dielectric, a wide-bandgap semiconductor, or P-type polysilicon to fill the source trench, thus working together to improve reverse recovery characteristics.

Benefits of technology

While achieving high withstand voltage and low on-resistance, it improves switching characteristics and surge protection, reduces switching losses, and increases manufacturing yield and reliability.

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Abstract

The invention relates to a cellular structure for a silicon carbide power device and a preparation method of the cellular structure. The top surface of the substrate is provided with an epitaxial layer of a first conductive type; the well region is located on the side, away from the substrate, of the epitaxial layer, and the well region comprises a source electrode structure, a grid electrode structure and a protection region of the second conduction type; the source structures and the gate structures penetrate through the well region in the first direction and are alternately arranged at intervals in the second direction; the protection region comprises a connection region surrounding a contact interface of the source electrode structure and the epitaxial layer, and a doped column which is located at the bottom of the connection region, extends in the first direction and is used for forming a super junction structure. The source electrode metal is located on the top surface of the epitaxial layer, and the source electrode metal comprises a plurality of extension parts which penetrate through the well region in the first direction and are arranged at intervals in the second direction; the top surface of the connection area is located within the bottom surface of the extension part. The reverse recovery characteristic of the super-junction MOSFET device can be effectively improved while high voltage resistance can be ensured.
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