Ultraviolet cut-off anti-reflection light-transmitting substrate as well as preparation method and application thereof

Abstract

The invention relates to an ultraviolet cut-off anti-reflection light-transmitting substrate and a preparation method and application thereof.The ultraviolet cut-off anti-reflection light-transmitting substrate comprises a first light-transmitting substrate layer and an ultraviolet cut-off anti-reflection inorganic layer, and the first light-transmitting substrate layer comprises a first surface and a second surface; the first surface and the second surface are two side surfaces which are oppositely arranged, the ultraviolet cut-off anti-reflection inorganic layer is arranged on one side close to the first surface, and the second surface is a light incident surface; wherein the thickness of the ultraviolet cut-off antireflection inorganic layer ranges from 130 nm to 220 nm. The ultraviolet cut-off anti-reflection light-transmitting substrate provided by the invention not only can cut off ultraviolet light, but also has an anti-reflection effect, can improve the visible light transmittance, is used for preparing a perovskite battery, and can improve the ultraviolet stability and conversion efficiency of the perovskite battery.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to an ultraviolet cutoff antireflective light-transmitting substrate, its preparation method, and its application. Background Technology

[0002] Perovskite solar cells are attracting increasing attention from companies due to their high theoretical conversion efficiency, good low-light performance, low temperature coefficient, low energy consumption, short production process, and low production cost. Currently, more and more companies are dedicated to the research and development and production of perovskite solar cells and modules. At present, the laboratory conversion efficiency of perovskite solar cells has reached 26.7%, and the conversion efficiency of large-area perovskite solar cell modules (1m×2m) has exceeded 19%. The increasing conversion efficiency of perovskite solar cells and modules makes their rapid marketization imminent. At this stage, improving the stability of perovskite solar cells is particularly important. More and more photovoltaic power plants are now located in Northwest China, where the ultraviolet intensity and annual irradiance are relatively higher. Therefore, more and more photovoltaic companies are focusing on the ultraviolet stability of photovoltaic modules. As a next-generation technology, the ultraviolet stability of perovskite solar cells is of particular concern to companies. However, the ultraviolet tolerance of the active layer and some transport layers in perovskite solar cells is relatively poor, making it necessary to improve the ultraviolet stability of perovskite solar cells.

[0003] In existing technologies, to improve the UV stability of perovskite solar cells and their modules, some techniques involve coating the outer side of the light-receiving surface of the perovskite solar cell module with UV-blocking adhesive, setting a UV-blocking film, or a UV-conversion film. While this can help improve the UV tolerance and stability of the perovskite solar cell module, the UV-blocking adhesive, UV-blocking film, and UV-conversion film coated on the light-receiving surface of the perovskite solar cell module have poor environmental tolerance. During damp heat (DH) aging, thermal cycling (Tc) aging, and wet freeze (HF) aging, various problems such as yellowing, brittleness, delamination, and blistering may occur, which will seriously affect the conversion efficiency of the perovskite solar cell module. Therefore, perovskite solar cell modules using this technology still cannot maintain long-term stability outdoors.

[0004] Some technologies involve preparing an additional layer of UV-protective inorganic nanoparticles (such as TiO2) on the electron transport layer (ETL) in the upright structure. These inorganic nanoparticles provide UV protection, preventing the perovskite active layer from absorbing UV light and thus protecting the perovskite battery from UV radiation. However, this type of technology is only applicable to upright structures. It is worth noting that almost all companies currently use inverted structures. Upright structures cannot be industrialized at this stage due to the high-temperature insensitivity of Spiro system materials. Therefore, this type of technology cannot be truly applied on a large scale in perovskite battery modules at present.

[0005] Some technologies use metal alloys as the front or top electrode of perovskite cells, utilizing the metal alloy structure to prevent ultraviolet light transmission and thus protect the perovskite cells. However, when metal alloy electrodes age at high temperatures, ion migration leads to electrode reactions, which degrades the stability of the perovskite cells. In addition, using metal alloys as the front electrode affects the light absorption of the perovskite cells and modules, sacrificing the conversion efficiency of the perovskite cells, which is not worthwhile. When metal alloys are used as the top electrode, their ultraviolet protection effect on perovskite cells is limited, and they can only protect against reflected light. Therefore, such technologies have very little effect on improving the ultraviolet stability of perovskite cells.

[0006] Another technology involves using UV-absorbing adhesives during the encapsulation process of perovskite solar cell modules. However, this type of technology offers limited UV protection for perovskite solar cell modules, as light is emitted from the incident light surface (conductive glass surface). Therefore, this type of technology provides very little improvement to the UV stability of perovskite solar cell modules.

[0007] Therefore, there is an urgent need to develop a new technology to solve these problems in existing technologies, which can improve the ultraviolet stability of perovskite solar cells and maintain good environmental tolerance, allowing perovskite solar cells to be used outdoors for a long time. Summary of the Invention

[0008] To address the aforementioned technical problems, this invention provides an ultraviolet-blocking anti-reflective transparent substrate, its preparation method, and its application. The ultraviolet-blocking anti-reflective transparent substrate can both block ultraviolet light and reduce reflection, thereby improving visible light transmittance. When applied to the preparation of perovskite solar cells, it can enhance the ultraviolet stability of the perovskite solar cells and exhibit good environmental tolerance.

[0009] To achieve this objective, the present invention adopts the following technical solution:

[0010] In a first aspect, the present invention provides an ultraviolet (UV) cutoff and antireflection transparent substrate, the UV cutoff and antireflection transparent substrate comprising a first transparent substrate layer and a UV cutoff and antireflection inorganic layer, the first transparent substrate layer comprising a first surface and a second surface, the first surface and the second surface being oppositely disposed side surfaces, the UV cutoff and antireflection inorganic layer being disposed on the side closer to the first surface, and the second surface being the light incident surface; wherein, the thickness of the UV cutoff and antireflection inorganic layer is 130 nm to 220 nm, for example 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm or 210 nm, etc.

[0011] In this invention, the ultraviolet-blocking antireflective transparent substrate includes an ultraviolet-blocking antireflective inorganic layer with a thickness of 130 nm to 220 nm. This ultraviolet-blocking antireflective inorganic layer not only blocks ultraviolet light (almost completely blocking ultraviolet light with wavelengths <370 nm), but also has an antireflective effect, improving the transmittance of visible light (visible light with wavelengths of 400 nm to 700 nm). Using this ultraviolet-blocking antireflective transparent substrate to prepare perovskite solar cells can improve the ultraviolet stability of the perovskite solar cells and enhance their environmental tolerance, allowing for long-term outdoor use. It also increases the power generation of the perovskite solar cells and helps improve their high-temperature stability, achieving a synergistic effect. The inventors have confirmed through research that ultraviolet light with a wavelength ≥370 nm has almost no destructive effect on perovskite solar cells. Using the aforementioned ultraviolet-blocking antireflective transparent substrate to prepare perovskite solar cells can prevent ultraviolet light with a wavelength <370 nm from passing through, thus achieving ultraviolet protection for the perovskite solar cells. Moreover, as is well known, perovskites mainly absorb visible light in the range of 400 nm to 700 nm. Using the aforementioned ultraviolet-blocking antireflective transparent substrate to prepare perovskite solar cells has an antireflective effect, which can maximize the utilization rate of visible light by perovskite solar cells, thereby improving the conversion efficiency of perovskite solar cells.

[0012] In this invention, the thickness of the ultraviolet (UV) cutoff antireflection inorganic layer is 130 nm to 220 nm. If the thickness of the UV cutoff antireflection inorganic layer is too thin, the UV light with a wavelength <370 nm will not be completely blocked, leading to a decrease in the UV aging stability of the perovskite solar cell. If the thickness of the UV cutoff antireflection inorganic layer is too thick, the transmittance of visible light with a wavelength of 400 nm to 700 nm will decrease, thus failing to achieve a sufficient antireflection effect and consequently reducing the conversion efficiency of the perovskite solar cell. Furthermore, whether the thickness of the UV cutoff antireflection inorganic layer is too thin or too thick will also affect the high-temperature stability of the perovskite solar cell.

[0013] In this invention, the ultraviolet-blocking antireflective inorganic layer is disposed on one side near the first surface, wherein the disposal includes processes such as sputtering, evaporation, atomic layer deposition (ALD), coating, or lamination.

[0014] Preferably, the first light-transmitting substrate layer includes a rigid substrate and / or a flexible substrate.

[0015] Preferably, the rigid substrate comprises transparent glass.

[0016] Preferably, the light-transmitting glass comprises transparent white glass.

[0017] Preferably, the thickness of the first light-transmitting substrate layer is 1.1 mm to 3.2 mm, such as 1.3 mm, 1.5 mm, 1.7 mm, 1.9 mm, 2.1 mm, 2.3 mm, 2.5 mm, 2.7 mm, 2.9 mm or 3.1 mm.

[0018] In this invention, the first light-transmitting substrate layer serves as a carrier for the ultraviolet cutoff and antireflection inorganic layer. When the ultraviolet cutoff and antireflection transparent substrate is applied to a perovskite solar cell, the first light-transmitting substrate layer can also serve as a carrier for the front electrode. The thickness of the first light-transmitting substrate layer is preferably 1.1 mm to 3.2 mm, which can ensure sufficient mechanical bearing capacity and reduce the absorption of visible light by the first light-transmitting substrate layer, allowing more visible light to enter the main structure of the battery, thereby increasing the absorption and utilization rate of visible light by the perovskite solar cell.

[0019] Preferably, the ultraviolet-blocking antireflective inorganic layer comprises a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, and a second low-refractive-index layer, which are sequentially stacked from the first surface.

[0020] Preferably, the thickness of the first high-refractive-index layer is 10 nm to 20 nm (e.g., 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, or 19 nm, etc.), the thickness of the first low-refractive-index layer is 20 nm to 40 nm (e.g., 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, or 38 nm, etc.), the thickness of the second high-refractive-index layer is 40 nm to 60 nm (e.g., 42 nm, 44 nm, 46 nm, 48 nm, 50 nm, 52 nm, 54 nm, 56 nm, or 58 nm, etc.), and the thickness of the second low-refractive-index layer is 60 nm to 100 nm (e.g., 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, and 95 nm, etc.).

[0021] In this invention, the thickness of the first high-refractive-index layer is preferably 10 nm to 20 nm. If the thickness of the first high-refractive-index layer is too large, the ultraviolet light cutoff and the anti-reflection effect in the visible light region will decrease, and the metal ions therein will be more likely to affect the main structure of the battery, resulting in a decrease in the high-temperature stability of the perovskite battery.

[0022] Preferably, the ultraviolet-blocking antireflective transparent substrate further includes a second transparent substrate layer, and the ultraviolet-blocking antireflective inorganic layer is stacked between the first transparent substrate layer and the second transparent substrate layer.

[0023] Preferably, the ultraviolet-blocking antireflective light-transmitting substrate comprises a first light-transmitting substrate layer, a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, a second low-refractive-index layer, and a second light-transmitting substrate layer, which are stacked sequentially.

[0024] Preferably, the first light-transmitting substrate layer is transparent conductive glass.

[0025] Preferably, the ultraviolet-blocking antireflective transparent substrate further includes a conductive layer, which is disposed between the first transparent substrate layer and the ultraviolet-blocking antireflective inorganic layer, or the conductive layer is disposed on the side of the ultraviolet-blocking antireflective inorganic layer away from the first transparent substrate layer.

[0026] Preferably, the ultraviolet-blocking antireflective transparent substrate comprises a first transparent substrate layer, a conductive layer, a first high-refractive layer, a first low-refractive layer, a second high-refractive layer, and a second low-refractive layer stacked sequentially.

[0027] Preferably, the ultraviolet-blocking antireflective transparent substrate comprises a first transparent substrate layer, a first high-refractive layer, a first low-refractive layer, a second high-refractive layer, a second low-refractive layer, and a conductive layer, which are stacked sequentially.

[0028] Preferably, the conductive layer comprises conductive glass.

[0029] Preferably, the first high-refractive-index layer and the second high-refractive-index layer each independently comprise a high-refractive-index material.

[0030] Preferably, the refractive index of the high refractive index material is 1.9 to 2.9, such as 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7 or 2.8.

[0031] Preferably, the first low-refractive layer and the second low-refractive layer each independently comprise a low-refractive-index material.

[0032] Preferably, the refractive index of the high-refractive-index material is greater than that of the low-refractive-index material.

[0033] Preferably, the high refractive index material includes any one or a combination of at least two of zinc oxide (ZnO), titanium dioxide (TiO2), cerium oxide (CeO), or tungsten trioxide (WO3).

[0034] It should be noted that the combination of at least two of zinc oxide, titanium dioxide, cerium oxide or tungsten trioxide in this invention includes a composite oxide formed by mutual doping of at least two of zinc oxide, titanium dioxide, cerium oxide or tungsten trioxide.

[0035] Preferably, the low refractive index material includes aluminum oxide (Al2O3).

[0036] In this invention, the low refractive index material is preferably alumina, which has excellent water and oxygen barrier capabilities, effectively protecting the high refractive index material from damage by water and oxygen, thereby improving the stability of the ultraviolet cutoff and antireflection inorganic layer and maintaining the durability of the ultraviolet light cutoff and visible light antireflection effects.

[0037] In this invention, the ultraviolet cutoff antireflection inorganic layer preferably consists of four layers: a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, and a second low-refractive-index layer. The fewer the number of layers, the thinner the total thickness, which significantly reduces the processing time and material usage, shortens the processing flow, and lowers manufacturing costs. This makes the ultraviolet cutoff antireflection transparent substrate suitable for use in perovskite solar cells. If the number of layers is too low, the ultraviolet cutoff capability of the perovskite solar cell deteriorates, as does its antireflection capability in the visible light region.

[0038] For example, the first high-refractive-index layer is made of zinc oxide, the first low-refractive-index layer is made of aluminum oxide, the second high-refractive-index layer is made of titanium dioxide, and the second low-refractive-index layer is made of aluminum oxide.

[0039] In this invention, the ultraviolet cutoff and antireflection inorganic layer includes a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, and a second low-refractive-index layer stacked sequentially from the first surface. The second low-refractive-index layer is located on the side closer to the front electrode, resulting in good high-temperature stability of the perovskite solar cell. However, if the first high-refractive-index layer is located on the side closer to the front electrode, and the high-refractive-index layer is in contact with the front electrode, the ultraviolet cutoff capability and visible light antireflection capability of the perovskite solar cell will deteriorate. Furthermore, after the high-refractive-index layer comes into contact with the front electrode, metal ions are more likely to migrate into the interior of the perovskite light-absorbing layer, leading to a severe deterioration in the high-temperature stability of the perovskite solar cell.

[0040] In a second aspect, the present invention provides a method for preparing an ultraviolet cutoff antireflection transparent substrate as described in the first aspect, the preparation method comprising the following steps: providing a first transparent substrate layer; and disposing an ultraviolet cutoff antireflection inorganic layer on the side of the first transparent substrate layer near the first surface, wherein the thickness of the ultraviolet cutoff antireflection inorganic layer is 130 nm to 220 nm.

[0041] Preferably, the ultraviolet cutoff and antireflection inorganic layer disposed on the side of the first light-transmitting substrate layer near the first surface includes: forming a first high-refractive-index layer on the side of the first light-transmitting substrate layer near the first surface; forming a first low-refractive-index layer on the side of the first high-refractive-index layer away from the first light-transmitting substrate layer; forming a second high-refractive-index layer on the side of the first low-refractive-index layer away from the first light-transmitting substrate layer; and forming a second low-refractive-index layer on the side of the second high-refractive-index layer away from the first light-transmitting substrate layer.

[0042] Preferably, the first high-refractive-index layer, the first low-refractive-index layer, the second high-refractive-index layer, and the second low-refractive-index layer are each independently formed by any one or a combination of at least two of sputtering, vapor deposition, atomic layer deposition, or solution coating.

[0043] For example, the first high-refractive-index layer, the first low-refractive-index layer, and the second high-refractive-index layer are prepared by sputtering, and the second low-refractive-index layer is prepared by ALD.

[0044] Thirdly, the present invention provides a perovskite solar cell, the perovskite solar cell comprising, as described in the first aspect, an ultraviolet cutoff and antireflection transparent substrate, a front electrode, a main body structure of the cell and a top electrode, which are stacked sequentially; the front electrode is disposed on the side of the ultraviolet cutoff and antireflection transparent substrate away from the light incident surface.

[0045] In this invention, when the front electrode is disposed on the side of the UV cutoff and antireflection transparent substrate away from the incident light surface, the UV cutoff and antireflection inorganic layer is located between the first transparent substrate layer and the front electrode, which can prevent metal ions in the first transparent substrate layer from migrating to the perovskite functional layer. Compared with the first high refractive layer and the second high refractive layer, the alumina used in the first low refractive layer and the second low refractive layer of the UV cutoff and antireflection inorganic layer has good compactness. This makes the UV cutoff and antireflection inorganic layer more effective in preventing metal ions in the first transparent substrate layer from migrating to the perovskite light-absorbing layer in the main battery structure. In addition, the alumina used in the first low refractive layer and the second low refractive layer can also prevent metal ions in the first high refractive layer and the second high refractive layer from migrating to the perovskite light-absorbing layer in the main battery structure, preventing these metal ions from damaging the perovskite light-absorbing layer, thereby improving the high-temperature stability of the perovskite battery.

[0046] In this invention, the UV cutoff and antireflection inorganic layer in the perovskite solar cell is located between the first transparent substrate layer and the main structure of the cell, that is, inside the perovskite solar cell and not on the outer surface of the perovskite solar cell. This avoids damage to the UV cutoff and antireflection inorganic layer by environmental factors (such as salt spray damage to the film layer), improves the durability of UV protection for the perovskite solar cell, enhances environmental tolerance, and allows the perovskite solar cell to be used outdoors for a long time.

[0047] In this invention, the main function of the front electrode and the top electrode is to conduct the photogenerated current.

[0048] Preferably, the battery body structure includes a perovskite light-absorbing layer, a hole transport layer located on one side of the perovskite light-absorbing layer, and an electron transport layer located on the other side of the perovskite light-absorbing layer.

[0049] It should be noted that the main structure of the perovskite battery in this invention can be an upright structure or an inverted structure.

[0050] Preferably, the electron transport layer in the main battery structure is disposed on the side close to the front electrode.

[0051] Preferably, the hole transport layer in the main battery structure is disposed on the side near the front electrode.

[0052] Preferably, the thickness of the perovskite light-absorbing layer is 300 nm to 800 nm, such as 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm or 750 nm.

[0053] Preferably, the hole transport layer comprises NiO. x layer.

[0054] In this invention, the main function of the hole transport layer is to transport holes, while it can also block electrons.

[0055] Preferably, the thickness of the hole transport layer is 20 nm to 100 nm, such as 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm or 90 nm.

[0056] In this invention, the thickness of the hole transport layer is preferably 20 nm to 100 nm. This ensures film quality and reduces defects in the hole transport layer, while also ensuring low series resistance within the battery structure, which is beneficial for improving short-circuit current. For example, the hole transport layer is formed by vacuum deposition of NiO on the front electrode. x It was prepared.

[0057] In this invention, the main function of the electron transport layer is to transport electrons, while also blocking holes, thereby reducing the recombination of electrons and holes and playing a role in selectively transporting electrons.

[0058] Preferably, the electron transport layer includes a PCBM layer.

[0059] Preferably, the thickness of the electron transport layer is 20 nm to 100 nm, such as 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm or 95 nm.

[0060] In this invention, the thickness of the electron transport layer is preferably 20 nm to 100 nm, which ensures film quality, reduces defects during electron transport, and also ensures low series resistance within the battery's main structure, thus facilitating increased short-circuit current. Exemplarily, the electron transport layer is prepared by coating a PCBM solution onto a perovskite light-absorbing layer.

[0061] Preferably, the front electrode comprises a transparent electrode.

[0062] Preferably, the top electrode comprises a transparent electrode and / or a metal electrode.

[0063] Preferably, the transparent electrode includes any one or a combination of at least two of the following: fluorine-doped tin oxide (FTO) electrode, tin-doped indium oxide (ITO) electrode, titanium-doped indium oxide (ITiO) electrode, cerium-doped indium oxide (ICO) electrode, tungsten-doped indium oxide (IWO) electrode, aluminum-doped zinc oxide (AZO) electrode, or boron-doped zinc oxide (BZO) electrode.

[0064] Fourthly, the present invention provides a method for fabricating a perovskite solar cell as described in the third aspect, the method comprising the following steps: providing an ultraviolet cutoff and antireflection transparent substrate as described in the first aspect; forming a front electrode on the side of the ultraviolet cutoff and antireflection transparent substrate away from the light incident surface; forming a battery body structure on the side of the front electrode away from the ultraviolet cutoff and antireflection transparent substrate; and forming a top electrode on the side of the battery body structure away from the ultraviolet cutoff and antireflection transparent substrate.

[0065] Fifthly, the present invention provides a perovskite battery module, the perovskite battery module comprising the perovskite battery and encapsulation material as described in the third aspect.

[0066] In a sixth aspect, the present invention provides a photovoltaic system comprising a perovskite cell as described in the third aspect or a perovskite cell module as described in the fifth aspect.

[0067] Compared with the prior art, the present invention has at least the following beneficial effects:

[0068] The ultraviolet (UV) cutoff and antireflection transparent substrate provided by this invention includes a first transparent substrate layer and a UV cutoff and antireflection inorganic layer. The first transparent substrate layer includes a first surface and a second surface, which are oppositely arranged side surfaces. The UV cutoff and antireflection inorganic layer is disposed on the side closer to the first surface, and the second surface is the light incident surface. The thickness of the UV cutoff and antireflection inorganic layer is 130 nm to 220 nm. The UV cutoff and antireflection transparent substrate can both cut off ultraviolet light and reduce reflection, thereby improving visible light transmittance. When applied to the fabrication of perovskite solar cells, it can improve the UV stability and environmental tolerance of perovskite solar cells, as well as improve the conversion efficiency of perovskite solar cells, enabling them to be used outdoors for a long time. It can also improve the high-temperature stability of perovskite solar cells, achieving a combination of multiple effects. Attached Figure Description

[0069] Figure 1 This is a schematic diagram of the perovskite solar cell provided in Example 1;

[0070] Among them, 150-first transparent substrate layer; 140-ultraviolet cutoff antireflection inorganic layer; 130-top electrode; 120-front electrode; 110-main battery structure; 111-perovskite light-absorbing layer; 112-hole transport layer; 113-electron transport layer; 151-first surface; 152-second surface;

[0071] Figure 2 This is a schematic diagram of the structure of the ultraviolet cutoff antireflection inorganic layer in Example 1;

[0072] Wherein, 141 - first high-refractive-index layer; 142 - first low-refractive-index layer; 143 - second high-refractive-index layer; 144 - second low-refractive-index layer;

[0073] Figure 3 This is a graph showing the light transmittance test results of the transparent white glass and the UV cutoff anti-reflective light-transmitting substrate in Example 1. Detailed Implementation

[0074] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. However, the following examples are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims.

[0075] Example 1

[0076] This embodiment provides an ultraviolet-blocking antireflective light-transmitting substrate and a perovskite solar cell. A schematic diagram of the perovskite solar cell is shown below. Figure 1 As shown, it includes an ultraviolet cut-off anti-reflection transparent substrate, a front electrode 120, a battery main structure 110 and a top electrode 130 arranged in sequence.

[0077] The ultraviolet cutoff and anti-reflection transparent substrate includes a first transparent substrate layer 150 and an ultraviolet cutoff and anti-reflection inorganic layer 140. The first transparent substrate layer 150 has a first surface 151 and a second surface 152. The ultraviolet cutoff and anti-reflection inorganic layer 140 is disposed on the first surface 151 and the second surface 152 is the light incident surface. The first surface 151 and the second surface 152 are two oppositely disposed side surfaces.

[0078] The main structure of the battery includes a perovskite light-absorbing layer 111, a hole transport layer 112 located on one side of the perovskite light-absorbing layer, and an electron transport layer 113 located on the other side of the perovskite light-absorbing layer. In the main structure of the battery, the hole transport layer 112 is disposed on the side close to the front electrode 120.

[0079] The first light-transmitting substrate layer 150 is transparent white glass with a thickness of 2.5 mm;

[0080] The schematic diagram of the structure of the ultraviolet-blocking antireflective inorganic layer is shown below. Figure 2 As shown, the structure includes a first high-refractive-index layer 141, a first low-refractive-index layer 142, a second high-refractive-index layer 143, and a second low-refractive-index layer 144, which are sequentially stacked from the first surface 151. The first high-refractive-index layer 141 is made of zinc oxide, the first low-refractive-index layer 142 is made of aluminum oxide, the second high-refractive-index layer 143 is made of titanium dioxide, and the second low-refractive-index layer 144 is made of aluminum oxide. The thickness of the first high-refractive-index layer 141 is 10 nm, the thickness of the first low-refractive-index layer 142 is 20 nm, the thickness of the second high-refractive-index layer 143 is 40 nm, the thickness of the second low-refractive-index layer 144 is 60 nm, and the thickness of the ultraviolet cutoff antireflection inorganic layer is 130 nm.

[0081] The ultraviolet-blocking antireflective transparent substrate is prepared by the following method: zinc oxide is magnetron sputtered on clean transparent white glass to form a first high-refractive-index layer; aluminum oxide is magnetron sputtered on the first high-refractive-index layer to form a first low-refractive-index layer; titanium dioxide is magnetron sputtered on the first low-refractive-index layer to form a second high-refractive-index layer; and aluminum oxide is atomically deposited on the second high-refractive-index layer to form a second low-refractive-index layer, thus obtaining the ultraviolet-blocking antireflective transparent substrate.

[0082] The perovskite solar cell was prepared using the following method:

[0083] An FTO transparent electrode with a thickness of 450 nm is formed by magnetron sputtering on the second low-refractive layer of the aforementioned ultraviolet cutoff anti-reflection transparent substrate to form the front electrode.

[0084] NiO is deposited on the front electrode via reactive plasma deposition. x A hole transport layer with a thickness of 40 nm is formed.

[0085] A 1.2 mol / L perovskite solution was spin-coated onto the hole transport layer and annealed at 130 °C for 15 min to form a perovskite light-absorbing layer with a thickness of 500 nm. The perovskite solution was prepared by dissolving PbI2, FAI, MAI and CsBr in a molar ratio of 20:17:1:2 in a solvent (N,N-dimethylformamide and N-methylpyrrolidone in a volume ratio of 9:1).

[0086] A chlorobenzene solution of PCBM (PCBM concentration of 20 mg / mL) was spin-coated onto the perovskite light-absorbing layer at a speed of 3000 r / s and annealed at 100℃ for 10 min to form an electron transport layer with a thickness of 60 nm.

[0087] An ITO transparent electrode is deposited on the electron transport layer to form the top electrode, with a thickness of 200 nm, thus obtaining the perovskite solar cell.

[0088] Example 2

[0089] This embodiment provides an ultraviolet-blocking antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the thickness of the first high-refractive layer is 20 nm; the thickness of the first low-refractive layer is 40 nm; the thickness of the second high-refractive layer is 60 nm; the thickness of the second low-refractive layer is 100 nm; and the thickness of the ultraviolet-blocking antireflective inorganic layer is 220 nm. Other conditions are the same as in Embodiment 1.

[0090] Example 3

[0091] This embodiment provides an ultraviolet-blocking antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the thickness of the first high-refractive layer is 15 nm; the thickness of the first low-refractive layer is 30 nm; the thickness of the second high-refractive layer is 50 nm; the thickness of the second low-refractive layer is 175 nm; the thickness of the ultraviolet-blocking antireflective inorganic layer is 175 nm; and other conditions are the same as in Embodiment 1.

[0092] Example 4

[0093] This embodiment provides an ultraviolet cutoff antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the material of the first high refractive layer is cerium oxide. In the preparation of the ultraviolet cutoff antireflective transparent substrate, the first high refractive layer is formed by magnetron sputtering of cerium oxide on a clean transparent white glass. Other conditions are the same as in Embodiment 1.

[0094] Example 5

[0095] This embodiment provides an ultraviolet cutoff antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the material of the second high refractive layer is tungsten trioxide. In the preparation of the ultraviolet cutoff antireflective transparent substrate, the second high refractive layer is formed by magnetron sputtering of tungsten trioxide on the first low refractive layer. Other conditions are the same as in Embodiment 1.

[0096] Example 6

[0097] This embodiment provides an ultraviolet cutoff antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the thickness of the first high-refractive layer is adjusted to 30 nm, and the thickness of the second high-refractive layer is adjusted to 20 nm. Other conditions are the same as in Embodiment 1.

[0098] Example 7

[0099] This embodiment provides an ultraviolet cutoff antireflective transparent substrate and a perovskite solar cell. The difference between this embodiment and Embodiment 1 is that the thickness of the first low-refractive layer is adjusted to 50 nm, and the thickness of the second low-refractive layer is adjusted to 30 nm. Other conditions are the same as in Embodiment 1.

[0100] Comparative Example 1

[0101] This comparative example provides a perovskite solar cell, which differs from Example 1 in that the ultraviolet-blocking antireflective light-transmitting substrate is replaced with transparent white glass. In the preparation of the perovskite solar cell, an FTO transparent electrode is formed by magnetron sputtering on a clean transparent white glass. Other conditions are the same as in Example 1.

[0102] Comparative Example 2

[0103] This comparative example provides an ultraviolet-blocking antireflective transparent substrate and a perovskite solar cell. The difference between this example and Example 1 is that the thickness of the first high-refractive layer is 5 nm; the thickness of the first low-refractive layer is 10 nm; the thickness of the second high-refractive layer is 30 nm; the thickness of the second low-refractive layer is 50 nm; and the thickness of the ultraviolet-blocking antireflective inorganic layer is 95 nm. Other conditions are the same as in Example 1.

[0104] Comparative Example 3

[0105] This comparative example provides an ultraviolet-blocking antireflective transparent substrate and a perovskite solar cell. The difference between this example and Example 1 is that the thickness of the first high-refractive layer is 25 nm; the thickness of the first low-refractive layer is 45 nm; the thickness of the second high-refractive layer is 65 nm; the thickness of the second low-refractive layer is 115 nm; and the thickness of the ultraviolet-blocking antireflective inorganic layer is 250 nm. Other conditions are the same as in Example 1.

[0106] Performance testing

[0107] The perovskite solar cells provided in Examples 1-7 and Comparative Examples 1-3 were tested as follows.

[0108] (1) Initial performance: The photovoltaic performance of the perovskite cell was tested under the AM1.5 solar simulator to obtain the short-circuit current density (Jsc), open-circuit voltage (Vco), fill factor (FF) and conversion efficiency (Eta).

[0109] (2) UV stability: The perovskite cells after UV aging test were tested for photovoltaic performance under AM1.5 solar simulator. The changes in short-circuit current density, open-circuit voltage, fill factor and conversion efficiency after UV irradiation were compared with the initial performance.

[0110] The aforementioned UV aging test involves irradiating the perovskite solar cell with ultraviolet light until the cumulative irradiation density reaches 60 kWh / m³. 2 Irradiation should be stopped at that time.

[0111] (3) High temperature stability: The perovskite cells after high temperature aging test were tested for photovoltaic performance under the AM1.5 solar simulator. The changes in short-circuit current density, open-circuit voltage, fill factor and conversion efficiency after high temperature aging were compared with the initial performance.

[0112] The temperature for the above high-temperature aging test was 85℃, and the time was 1000 h.

[0113] The test results are shown in Tables 1, 2 and 3.

[0114] Table 1

[0115]

[0116] Table 2

[0117]

[0118] Table 3

[0119]

[0120] The test results in Tables 1-3 show that the perovskite solar cells provided in Examples 1-5 exhibit minimal fluctuations in conversion efficiency after UV aging and high-temperature aging, demonstrating good UV and high-temperature stability. After UV irradiation, the absolute values ​​of the changes in short-circuit current density, open-circuit voltage, fill factor, and conversion efficiency are ≤1.55%; after high-temperature aging, the absolute values ​​of the changes in short-circuit current density, open-circuit voltage, fill factor, and conversion efficiency are ≤7.99% and ≤3.59%, respectively. Therefore, the perovskite solar cells prepared in Examples 1-5 demonstrate excellent stability under both UV and high-temperature conditions.

[0121] Figure 3 This is a graph showing the light transmittance test results of the transparent white glass and the UV-blocking anti-reflective substrate in Example 1. Figure 3 It can be seen that after adding the ultraviolet cutoff antireflection inorganic layer, the cutoff of ultraviolet light <370 nm is significantly improved, and almost all of it is cut off; the transmittance of visible light with wavelengths of 400 nm to 700 nm is significantly increased, indicating that the ultraviolet cutoff antireflection inorganic layer has the function of cutting off ultraviolet light and improving the transmittance of visible light.

[0122] If the thickness of the first high-refractive-index layer is too thick and the thickness of the second high-refractive-index layer is too thin, the initial efficiency of the perovskite solar cell (Example 6) is not much different from that of the perovskite solar cell without an ultraviolet cutoff antireflection inorganic layer (Comparative Example 1), with no significant improvement. Moreover, the perovskite solar cell prepared in Example 6 has poor stability after ultraviolet aging, with ultraviolet stability far lower than that of Example 1, and high-temperature stability is also worse than that of Example 1. The reason is that when the thickness of the first high-refractive-index layer is too thick and the thickness of the second high-refractive-index layer is too thin, the ultraviolet light cutoff and the antireflection effect in the visible light region decrease significantly. At the same time, when the thickness of the second high-refractive-index layer is too thin, the ability to block metal ions becomes worse, thus the high-temperature stability of the perovskite solar cell deteriorates.

[0123] If the thickness of the first low-refractive layer is too thick and the thickness of the second low-refractive layer is too thin, the initial efficiency of the prepared perovskite solar cell (Example 7) is not significantly different from that of the perovskite solar cell without an ultraviolet cutoff antireflection inorganic layer (Comparative Example 1), showing no substantial improvement. Furthermore, the perovskite solar cell prepared in Example 7 exhibits poor stability after ultraviolet aging, with its ultraviolet stability being far lower than that of Example 1. This is because when the thickness of the first low-refractive layer is too thick and the thickness of the second low-refractive layer is too thin, the ultraviolet light cutoff and the antireflection effect in the visible light region decrease significantly.

[0124] Compared to Example 1, if the perovskite solar cell does not have an ultraviolet (UV) cutoff and antireflection inorganic layer (Comparative Example 1), the conversion efficiency of the perovskite solar cell after UV aging and high-temperature aging will both decrease significantly, exceeding 5%. This invention, by incorporating an UV cutoff and antireflection inorganic layer, significantly reduces the conversion efficiency decrease after UV aging and high-temperature aging. The perovskite solar cells prepared using the optimal process in Examples 1-7 show a conversion efficiency decrease of only 0.21% after UV aging and an increase of 0.36% after high-temperature aging, effectively improving the UV and high-temperature stability of the perovskite solar cell. This is mainly because the UV cutoff and antireflection inorganic layer of this invention can effectively block the transmission of UV light with wavelengths <370 nm, while UV light with wavelengths ≥370 nm has almost no destructive effect on the perovskite solar cell, thus maintaining UV stability. Furthermore, the UV cutoff and antireflection inorganic layer can effectively block metal ions in the glass from entering the perovskite light-absorbing layer, thereby reducing the damage caused by metal ions to the perovskite light-absorbing layer and maintaining high-temperature stability.

[0125] Compared with Example 1, if the thickness of the UV cutoff and antireflection inorganic layer in the perovskite solar cell is too thin (Comparative Example 2), the conversion efficiency of the prepared perovskite solar cell after UV aging and high temperature aging is almost the same as that of the perovskite solar cell without a UV cutoff and antireflection inorganic layer (Comparative Example 1). This shows that when the UV cutoff and antireflection inorganic layer is too thin, it loses its UV protection capability and does not significantly help with high temperature stability.

[0126] Compared to Example 1, if the thickness of the UV cutoff antireflection inorganic layer in the perovskite solar cell is too thick (Comparative Example 3), the initial conversion efficiency of the prepared perovskite solar cell is significantly reduced. This indicates that an excessively thick UV cutoff antireflection inorganic layer directly affects the transmittance of visible light, thereby affecting the initial conversion efficiency of the perovskite solar cell, and does not help with high-temperature stability. This may be because when the thickness of the UV cutoff antireflection inorganic layer is too thick, the amount of metal ions also increases accordingly, so it does not significantly help with the high-temperature stability of the perovskite solar cell.

[0127] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A UV-blocking, anti-reflective, transparent substrate, characterized in that, The ultraviolet-blocking antireflective transparent substrate includes a first transparent substrate layer and an ultraviolet-blocking antireflective inorganic layer. The first transparent substrate layer includes a first surface and a second surface, which are oppositely arranged side surfaces. The ultraviolet-blocking antireflective inorganic layer is disposed on the side closer to the first surface, and the second surface is the light-incident surface. The thickness of the ultraviolet-blocking antireflective inorganic layer is 130 nm to 220 nm.

2. The UV-blocking antireflective light-transmitting substrate according to claim 1, characterized in that, The first light-transmitting substrate layer includes a rigid substrate and / or a flexible substrate; And / or, the rigid substrate includes transparent glass; And / or, the thickness of the first light-transmitting substrate layer is 1.1 mm to 3.2 mm.

3. The ultraviolet-blocking antireflective light-transmitting substrate according to claim 1, characterized in that, The ultraviolet-blocking antireflective inorganic layer includes a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, and a second low-refractive-index layer, which are sequentially stacked from the first surface. The thickness of the first high-refractive layer is 10 nm to 20 nm, the thickness of the first low-refractive layer is 20 nm to 40 nm, the thickness of the second high-refractive layer is 40 nm to 60 nm, and the thickness of the second low-refractive layer is 60 nm to 100 nm. And / or, the ultraviolet cut-off antireflection transparent substrate further includes a second transparent substrate layer, and the ultraviolet cut-off antireflection inorganic layer is stacked between the first transparent substrate layer and the second transparent substrate layer; And / or, the first light-transmitting substrate layer is transparent conductive glass; And / or, the ultraviolet cut-off antireflection transparent substrate further includes a conductive layer, which is disposed between the first transparent substrate layer and the ultraviolet cut-off antireflection inorganic layer, or the conductive layer is disposed on the side of the ultraviolet cut-off antireflection inorganic layer away from the first transparent substrate layer.

4. The ultraviolet-blocking antireflective light-transmitting substrate according to claim 3, characterized in that, The first high-refractive-index layer and the second high-refractive-index layer each independently comprise a high-refractive-index material; The refractive index of the high-refractive-index material is 1.9~2.9; The first low-refractive-index layer and the second low-refractive-index layer each independently comprise a low-refractive-index material; The refractive index of the high-refractive-index material is greater than that of the low-refractive-index material; The high refractive index material includes any one or a combination of at least two of zinc oxide, titanium dioxide, cerium oxide, or tungsten trioxide. The low refractive index material includes aluminum oxide.

5. A method for preparing an ultraviolet-blocking antireflective light-transmitting matrix as described in any one of claims 1 to 4, characterized in that, The preparation method includes the following steps: Provide a first light-transmitting substrate layer; and An ultraviolet cutoff and antireflection inorganic layer is disposed on the side of the first light-transmitting substrate layer near the first surface, and the thickness of the ultraviolet cutoff and antireflection inorganic layer is 130 nm to 220 nm.

6. The preparation method according to claim 5, characterized in that, An ultraviolet-blocking and anti-reflective inorganic layer is disposed on the side of the first light-transmitting substrate layer near the first surface, comprising: A first high-refractive-index layer is formed on the side of the first light-transmitting substrate layer near the first surface; A first low-refractive-index layer is formed on the side of the first high-refractive-index layer that is away from the first light-transmitting substrate layer; A second high-refractive-index layer is formed on the side of the first low-refractive-index layer that is away from the first light-transmitting substrate layer; A second low-refractive-index layer is formed on the side of the second high-refractive-index layer that is away from the first light-transmitting substrate layer; The first high-refractive-index layer, the first low-refractive-index layer, the second high-refractive-index layer, and the second low-refractive-index layer are each independently formed by any one or a combination of at least two of sputtering, vapor deposition, atomic layer deposition, or solution methods.

7. A perovskite battery, characterized in that, The perovskite solar cell comprises, in any one of claims 1 to 4, an ultraviolet cutoff antireflective light-transmitting substrate, a front electrode, a main cell structure, and a top electrode, which are stacked sequentially. The front electrode is disposed on the side of the ultraviolet cutoff antireflective light-transmitting substrate away from the incident light surface.

8. A method for preparing a perovskite solar cell as described in claim 7, characterized in that, The preparation method includes the following steps: Provides an ultraviolet-blocking antireflective light-transmitting substrate as described in any one of claims 1 to 4; and A front electrode is formed on the side of the ultraviolet-blocking antireflective light-transmitting substrate away from the incident light surface; The main battery structure is formed on the side of the front electrode away from the ultraviolet cutoff anti-reflection transparent substrate; A top electrode is formed on the side of the battery body structure away from the ultraviolet cutoff anti-reflection light-transmitting substrate.

9. A perovskite solar cell module, characterized in that, The perovskite solar cell assembly includes the perovskite solar cell and encapsulation material as described in claim 7.

10. A photovoltaic system, characterized in that, The photovoltaic system includes the perovskite cell as described in claim 7 or the perovskite cell module as described in claim 9.

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