Method for repairing ceramic heater for semiconductor

Abstract

The invention relates to the technical field of semiconductors, and discloses a method for repairing a ceramic heater for a semiconductor, which comprises the following steps of: measuring material parameters of a heater to be repaired at different temperatures before repairing, fitting to form an interpolation function, and combining three-dimensional modeling and simulation technologies to obtain the ceramic heater for the semiconductor. The thermal response behavior of the heater under the actual working condition can be accurately simulated, data support is provided for the follow-up thin film deposition repairing process, and the repairing precision and pertinence are remarkably improved. The method can effectively solve the problems of long repairing period, complex process, high labor intensity, high repairing cost and the like in the prior art, and has good engineering application value and popularization prospect.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a method for repairing ceramic heaters for semiconductors. Background Technology

[0002] In semiconductor chip manufacturing, wafer temperature control has a significant impact on the stability and yield of various process steps. Especially in thin film deposition, photolithography, and etching, the temperature field distribution on the wafer directly affects the uniformity of the thin film and the quality of interface bonding. Therefore, achieving a temperature distribution with minimal temperature differences has become a crucial technical challenge for improving chip yield.

[0003] In existing technologies, aluminum nitride (AlN) ceramic heaters, manufactured using a hot-pressing sintering process, are commonly employed to achieve uniform heating of wafers. These heaters feature high thermal conductivity, a coefficient of thermal expansion close to that of silicon wafers, and excellent electrical insulation properties, effectively reducing the impact of thermal stress on the wafer while ensuring heating efficiency. Furthermore, the dense structure of hot-pressed aluminum nitride ceramics not only enhances its resistance to thermal shock but also strengthens its resistance to corrosive industrial gases, making it suitable for chip manufacturing environments under various atmospheric conditions.

[0004] However, in practical applications, heaters operate in high-temperature environments for extended periods, and their surfaces are also exposed to corrosive process gases such as fluorine and chlorine, making them highly susceptible to material fatigue and structural damage. With prolonged use, some heaters may develop micro-cracks on their upper surfaces. If not addressed promptly, these cracks can gradually extend below the ceramic layer, damaging the underlying metal adsorption layer or electrode layer, thus affecting the overall performance of the heater and potentially rendering the equipment unusable.

[0005] Currently, the industry commonly repairs cracked heaters by grinding down the surface and reprocessing the functional structure. However, this method suffers from problems such as long repair cycles, complex processes, and high labor intensity. Furthermore, the heater body has a limited number of repair cycles and a limited service life. Especially when the crack has penetrated below the ceramic layer, the repair difficulty and cost increase significantly. Summary of the Invention

[0006] In view of this, the present invention provides a method for repairing ceramic heaters for semiconductors, in order to solve the problems of long repair cycle, complex process, high labor intensity and high repair cost in the prior art when repairing heaters with cracks.

[0007] To solve the above-mentioned technical problems, the technical solution of the present invention is as follows: This invention provides a method for repairing ceramic heaters for semiconductors, comprising the following steps: The material parameters of the heater to be repaired are measured at different temperatures, and an interpolation function is formed by fitting the parameters. A three-dimensional model of the heater is established, and the material parameters of the three-dimensional model are set in the simulation software and then associated with the interpolation function. Set the initial and boundary parameters of the simulation physics field, couple multiple physics fields, set the physics field coupling interface for the calculation, and realize the simulation calculation; The three-dimensional model is meshed; The thermal and mechanical parameter ranges of the thin film are preset, and a parametric scan is performed in the simulation software. The optimized thin film parameters are selected based on the simulation calculation results. Based on the optimized thin film parameters, the corresponding thin film is selected. Before the thin film deposition, the structural integrity of the heater to be repaired is scanned and evaluated, and the surface crack area of ​​the heater to be repaired is pre-treated by grinding. After film deposition, the film thickness is measured and the deposition effect is evaluated. Temperature uniformity is verified during wafer heating, and the deposition process is adjusted based on the test results. The surface condition of the heater is monitored during use, and replacement or repeated deposition is performed to repair any cracks found.

[0008] It has the following advantages: This invention provides a repair method for a ceramic heater used in semiconductors. Before repair, the material parameters of the heater to be repaired at different temperatures are measured and fitted to form an interpolation function. Combined with 3D modeling and simulation technology, the thermodynamic response behavior of the heater under actual operating conditions can be accurately simulated, providing data support for subsequent thin film deposition repair processes and significantly improving the accuracy and specificity of the repair. This invention employs a multiphysics coupled simulation method to jointly analyze material parameters, structural stress, and temperature distribution. Mesh generation and parametric scanning are used to optimize the selection of deposition film parameters, improving the reliability and consistency of the repair effect. During the repair implementation stage, the cracked area is pre-treated by grinding, and deposition is performed using the optimal film parameters determined by simulation. This not only improves the interfacial bonding quality between the film and the substrate but also effectively controls the film thickness and stress distribution, reducing the risk of re-cracking after repair. This application achieves maintainable management of the heater throughout its entire lifecycle by continuously monitoring its surface condition during use and promptly replacing or repeating repairs when new cracks appear. This significantly shortens the overall repair cycle, reduces operational difficulty and labor costs, and improves equipment operation and maintenance efficiency. This method can effectively solve the problems of long repair cycle, complex process, high labor intensity and high repair cost in the existing technology, and has good engineering application value and promotion prospects.

[0009] According to some embodiments of the present invention, the material parameters include mechanical material parameters, thermal material parameters, and electrical material parameters.

[0010] According to some embodiments of the present invention, establishing a three-dimensional model of the heater includes establishing a three-dimensional model of the heater to be repaired in three-dimensional modeling software and then importing it into simulation software; or establishing a three-dimensional model directly in simulation software.

[0011] According to some embodiments of the present invention, the physical field parameters include current physical field, solid mechanical physical field and solid heat transfer physical field.

[0012] According to some embodiments of the present invention, in the step of meshing the three-dimensional model, after the mesh is divided using meshing software, it is imported into simulation software, the three-dimensional model is meshed in the simulation software, and the mesh is statistically analyzed and the mesh quality is evaluated by the simulation software.

[0013] According to some embodiments of the present invention, a sweeping method is used to divide the mesh for regular components, a free tetrahedral mesh is used for irregular components, and a boundary layer can be used to treat thin layers.

[0014] According to some embodiments of the present invention, the thermal and mechanical parameters of the thin film include thickness, thermal conductivity, coefficient of thermal expansion, and Young's modulus; in the simulation software, add the parameter name, parameter value list, parameter unit, and select the parameter scan type: all combinations or specified combinations; The preset parameter range should refer to the parameter range of the wafer. Based on the temperature distribution and stress distribution in the simulation calculation results, the optimal thin film parameters are obtained.

[0015] According to some embodiments of the present invention, the structural integrity of the heater to be repaired is scanned and evaluated using non-destructive testing equipment to confirm the depth and width of the crack in the heater to be repaired.

[0016] According to some embodiments of the present invention, after the heater deposits the thin film, a film thickness gauge is used to measure the distance from the surface of the deposited thin film to the metal mesh in order to evaluate the deposition thickness: First, calibrate the film thickness gauge, determine the center of the upper surface, take a radius every 30 degrees along the horizontal direction, divide the radius into three equal parts, and measure the distance from the film surface to the metal mesh.

[0017] According to some embodiments of the present invention, after the heater deposits the thin film, the wafer is subjected to temperature testing to evaluate the deposition effect of the thin film. The specific steps are as follows: The heater was tested for temperature rise to see if the temperature rise curve after film deposition met the process requirements. The wafer is heated to the target temperature, and the temperature at each monitoring point on the wafer is evaluated. Based on the assessment results, the flow rate and direction of the industrial gases were adjusted. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a flowchart illustrating a method for repairing a semiconductor ceramic heater, as provided in some embodiments of the present invention. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0022] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0023] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0024] The ceramic heater includes a handle and a heating plate, which supports the wafer. When cracks appear on the upper surface of the heater, an abnormal temperature field occurs above the crack, affecting the quality of the deposited thin film. Continuous monitoring of the wafer's deposited thin film quality reveals a decrease in yield, or analysis and testing reveal cracks on the heater surface, necessitating heater repair.

[0025] Reference Figure 1 As shown, the present invention provides a method for repairing a ceramic heater for semiconductors, comprising the following steps: The material parameters of the heater to be repaired were measured at different temperatures, and an interpolation function was formed by fitting the parameters. A three-dimensional model of the heater was established, and the material parameters of the three-dimensional model were set in the simulation software, and the interpolation function was associated with it. Set the initial and boundary parameters of the simulation physics field, couple multiple physics fields, set the coupling interface of the physics fields participating in the calculation, and realize the simulation calculation; Mesh the 3D model; The thermal and mechanical parameter ranges of the thin film are preset, and a parametric scan is performed in the simulation software. The optimized thin film parameters are selected based on the simulation calculation results. Based on the optimized thin film parameters, the corresponding thin film is selected. Before the thin film deposition, the structural integrity of the heater to be repaired is scanned and evaluated, and the surface crack area of ​​the heater to be repaired is pre-treated by grinding. After film deposition, the film thickness is measured and the deposition effect is evaluated. Temperature uniformity is verified during wafer heating, and the deposition process is adjusted based on the test results. The surface condition of the heater is monitored during use, and replacement or repeated deposition is performed to repair any cracks found.

[0026] Specifically, this invention provides a repair method for a semiconductor ceramic heater. Before repair, the material parameters of the heater to be repaired at different temperatures are measured and fitted to form an interpolation function. Combined with 3D modeling and simulation technology, the thermodynamic response behavior of the heater under actual operating conditions can be accurately simulated, providing data support for subsequent thin film deposition repair processes and significantly improving the accuracy and specificity of the repair. This invention employs a multiphysics coupling simulation method to jointly analyze material parameters, structural stress, and temperature distribution. Mesh generation and parametric scanning are used to optimize the selection of deposition film parameters, improving the reliability and consistency of the repair effect. During the repair implementation stage, the cracked area is pre-treated by grinding, and deposition is performed using the optimal film parameters determined by simulation. This not only improves the interfacial bonding quality between the film and the substrate but also effectively controls the film thickness and stress distribution, reducing the risk of re-cracking after repair. This application achieves maintainable management of the heater throughout its entire lifecycle by continuously monitoring its surface condition during use and promptly replacing or repeating repairs when new cracks appear. This significantly shortens the overall repair cycle, reduces operational difficulty and labor costs, and improves equipment operation and maintenance efficiency. This method can effectively solve the problems of long repair cycle, complex process, high labor intensity and high repair cost in the existing technology, and has good engineering application value and promotion prospects.

[0027] In some embodiments of the present invention, the material parameters include mechanical material parameters, thermal material parameters, and electrical material parameters.

[0028] Specifically, the heater consists of multiple parts, including a handle, heating plate, heating wire, and adsorption mesh. To accurately simulate the temperature and stress fields of the heater, it is necessary to measure the mechanical, thermal, and electrical material parameters of each part of the heater to be repaired, such as thermal conductivity, coefficient of thermal expansion, Young's modulus, and the electrical conductivity of the heating wire. Since many of these parameters vary with temperature, it is necessary to measure the parameters at different temperatures and then fit them into an interpolation function.

[0029] Understandably, when measuring the material parameters of the heater to be repaired, mechanical, thermal, and electrical material parameters are taken into account to more comprehensively and accurately reflect the overall performance of the heater under actual working conditions.

[0030] The introduction of mechanical material parameters helps to assess the deformation and failure trends of the heater structure under thermal stress and external loads, and improves the understanding of crack formation mechanisms; the acquisition of thermal material parameters makes the temperature field simulation closer to reality, and the temperature uniformity assessment of the heater is more accurate; the introduction of electrical material parameters helps to simulate the energy conduction characteristics during the heating process of the heater, and enhances the physical realism of the simulation model.

[0031] By introducing multidimensional material parameters and performing modeling and simulation, the accuracy of optimizing thin film parameters can be effectively improved, providing more reliable data support for subsequent deposition processes, thereby further improving the overall performance and service life of the repaired heater.

[0032] In some embodiments of the present invention, creating a three-dimensional model of the heater includes creating a three-dimensional model of the heater to be repaired in three-dimensional modeling software and then importing it into simulation software; or creating a three-dimensional model directly in simulation software.

[0033] Specifically, there are two methods to create a 3D model: one is to create a 3D model of the heater in 3D modeling software such as Solidworks or CAD, and then import it into simulation software such as COMSOL Multiphysics, Ansys, or ABAQUS. The advantage of doing this is that the 3D model can be used in the machining of parts. The second method is to create the 3D model directly in the simulation software, which improves the accuracy of the model creation.

[0034] By supporting the selection of two modeling paths, the adaptability and versatility of the method are enhanced, which is conducive to rapid deployment and implementation on different R&D platforms or enterprise usage environments, and improves the flexibility and engineering adaptability of remediation solutions.

[0035] After creating the 3D model, materials and their parameters need to be added and set in the simulation software. Materials such as aluminum nitride, molybdenum, and silicon nitride need to be added, and their parameters set. For example, the density, heat capacity, thermal conductivity, Young's modulus, Poisson's ratio, coefficient of thermal expansion, and relative permittivity of aluminum nitride need to be set, as do the density, heat capacity, thermal conductivity, electrical conductivity, relative permittivity, coefficient of thermal expansion, Young's modulus, and Poisson's ratio of molybdenum.

[0036] For parameters that vary with temperature, the parameters need to be set to the corresponding interpolation function.

[0037] In some embodiments of the present invention, the physical field parameters include current physical field, solid mechanical physical field and solid heat transfer physical field.

[0038] Specifically, the current field requires setting initial parameters for current or potential, as well as grounding parameters. If a temperature rise curve is set, the current or potential also needs to be adjusted accordingly. Solid heat transfer requires setting initial values, thermal insulation, heat flux, and other parameters. Other physical fields also need to be set based on the initial and boundary parameters.

[0039] During the simulation calculation, the physical fields of current, solid mechanics, and solid heat transfer were coupled as the main simulation parameters to achieve comprehensive simulation of the heater under various working conditions such as power-on heating, temperature change, and structural response.

[0040] By introducing a current physical field, the current distribution and heating characteristics of the heater under actual working conditions can be accurately simulated, providing a basis for evaluating temperature rise efficiency and electrical performance stability. Combining it with a solid heat transfer physical field makes the temperature field distribution more realistic, which helps to optimize the film design to improve temperature uniformity. Introducing a solid mechanical physical field can effectively analyze the stress and strain distribution of the heater under thermal load and predict potential weak areas in the structure.

[0041] The use of multiple physical fields in a coupled manner, compared to simulation of a single physical field, can more comprehensively and realistically reflect the physical behavior of ceramic heaters in actual operation, improve the scientific nature of repair design and the accuracy of prediction, thereby improving the reliability of repair results and the service life of heaters.

[0042] In some embodiments of the present invention, in the step of meshing the three-dimensional model, after the mesh is divided using meshing software, it is imported into simulation software, the three-dimensional model is meshed in the simulation software, and the mesh is statistically analyzed and the mesh quality is evaluated using the simulation software.

[0043] Specifically, when meshing the 3D model, professional meshing software is used for preprocessing, and the mesh is then imported into the simulation software. At the same time, the simulation software is used to perform statistical analysis and quality evaluation on the mesh, which not only improves the accuracy and efficiency of meshing, but also ensures the accuracy and stability of subsequent simulation calculations.

[0044] This method, by introducing a dedicated mesh generation tool, enables refined modeling of complex geometries, improves the resolution of meshes in key areas such as crack edges and membrane interfaces, and is beneficial for capturing local stress and temperature gradient changes. Statistical and quality evaluations performed after importing the mesh into simulation software can promptly identify problems such as distortion and element quality deviations in mesh generation, facilitating optimization and adjustment of the mesh scheme and ensuring the reliability of simulation results from the source.

[0045] The above processing methods effectively avoid simulation errors or non-convergence caused by poor mesh quality, improve the stability and engineering applicability of simulation calculations, and provide a solid foundation for subsequent optimization of repair parameters and precise formulation of film deposition processes.

[0046] After meshing, the quality of the mesh can be evaluated using mesh statistics in simulation software. The element quality histogram clearly illustrates the quality of the mesh. If the element quality histogram indicates low mesh quality, the mesh needs to be regenerated.

[0047] In some embodiments of the present invention, a sweeping method is used to divide the mesh for regular components, a free tetrahedral mesh is used for irregular components, and a boundary layer can be used to treat thin layers.

[0048] Specifically, when meshing the 3D model, different meshing strategies are adopted according to the structural characteristics of each part of the heater: sweep meshing is used for regular parts, free tetrahedral meshing is used for irregular parts, and boundary layer processing is introduced for thin-layer structures, thereby achieving a balance between the overall mesh refinement and simulation efficiency.

[0049] Specifically, using swept meshes for regular structures can significantly reduce the number of elements and improve element quality, which helps to speed up the solution process; using free tetrahedral meshes for irregular structures improves adaptability to complex geometries and ensures that local structures can also be accurately modeled; and boundary layer treatment is particularly suitable for simulating subtle physical changes in thin film layers or thermal boundary layer regions, which helps to capture rapid gradient changes in temperature and stress inside the deposition layer and improve simulation resolution.

[0050] By adopting a targeted meshing strategy based on structural characteristics, not only was the allocation of computational resources for the overall model optimized, but the simulation accuracy of key areas was also improved. This helps to more accurately assess the repair effect and guide the adjustment of the deposition process, thereby further enhancing the reliability and engineering practicality of heater repair.

[0051] For the ceramic heater of this application, the handle has a cylindrical middle part and irregular upper and lower parts. The handle is divided into three parts by a segmentation method. The cylindrical part can be swept, and the upper and lower parts are processed with free tetrahedral mesh.

[0052] In some embodiments of the present invention, the thermal and mechanical parameters of the thin film include thickness, thermal conductivity, coefficient of thermal expansion, and Young's modulus; in the simulation software, add the parameter name, parameter value list, parameter unit, and select the parameter scan type: all combinations or specified combinations; The preset parameter range should refer to the parameter range of the wafer. Based on the temperature distribution and stress distribution in the simulation calculation results, the optimal thin film parameters are obtained.

[0053] Specifically, in the process of optimizing thin film parameters, key thermal and mechanical parameters such as film thickness, thermal conductivity, coefficient of thermal expansion, and Young's modulus were comprehensively considered. The system management and combined scanning of parameters were realized in the simulation software, which not only improved the standardization of parameter settings, but also enhanced the pertinence and practical value of simulation results.

[0054] By explicitly adding the name, value list, and unit of each parameter to the simulation software, and supporting parameter scanning modes of "all combinations" or "specified combinations," the software can flexibly address the needs of multivariate joint analysis under different operating conditions, effectively improving the efficiency of parameter optimization. The simulation boundaries of the thin film are set in conjunction with the parameter range of the reference wafer, ensuring that the optimization results are closer to the actual application environment.

[0055] Meanwhile, based on the temperature and stress distribution data in the simulation results, the optimal thin film parameters that achieve a balance between thermal performance and structural stability can be scientifically selected, thereby guiding the subsequent film deposition process and improving the temperature uniformity and structural reliability of the heater after repair.

[0056] This method, through systematic parameter setting and data-driven optimization processes, effectively avoids the empirical and blind selection of traditional parameters, providing solid support for achieving high-quality, repeatable heater repair processes.

[0057] In some embodiments of the present invention, the structural integrity of the heater to be repaired is scanned and evaluated using non-destructive testing equipment to confirm the depth and width of the crack in the heater to be repaired.

[0058] Before thin film deposition repair, this invention uses non-destructive testing equipment to scan and evaluate the structural integrity of the heater to be repaired. This allows for accurate acquisition of key defect information such as the depth and width of cracks without damaging the device itself, thus providing data support for the precise formulation of the repair process.

[0059] By employing non-destructive testing methods such as ultrasonic waves, infrared thermography, X-ray CT, or laser scanning, rapid and comprehensive defect identification can be performed on the internal and surface structures of ceramic heaters. This not only allows for the determination of crack morphology and propagation trends but also assesses the structural stability and residual life of the cracked area, thereby improving the accuracy of determining repair feasibility.

[0060] Compared to methods that rely on visual observation or experience-based judgment, this non-destructive assessment method improves the reliability and repeatability of fault identification, avoids problems such as repair failure or film detachment caused by insufficient assessment of structural defects, and provides a precise positioning basis for subsequent polishing and thin film deposition.

[0061] When pre-treating the surface cracked area of ​​the heater to be repaired by grinding, the surface should be ground appropriately according to the thickness of the film to be deposited. Removing a certain thickness from the aged surface of the heater can enable the film and the heater surface to bond better and form a better whole.

[0062] In some embodiments of the present invention, after the heater deposits the thin film, a film thickness gauge is used to measure the distance from the surface of the deposited thin film to the metal mesh in order to evaluate the deposition thickness. First, calibrate the film thickness gauge, determine the center of the upper surface, take a radius every 30 degrees along the horizontal direction, divide the radius into three equal parts, and measure the distance from the film surface to the metal mesh.

[0063] Specifically, by using a film thickness gauge to measure the distance from the film surface to the metal mesh after the film is deposited in the heater, the film deposition thickness can be accurately assessed, which helps to ensure the quality of the repair process and the uniformity of the film performance.

[0064] In practice, by calibrating the film thickness gauge and determining the center of the upper surface of the heater, a radius is taken every 30 degrees along the horizontal direction. This radius is then divided into three equal segments for multi-point measurement, which can comprehensively cover the heating area and obtain representative film thickness distribution data. This distributed sampling strategy effectively improves the spatial resolution of film thickness measurement and facilitates the identification of non-uniform regions that may exist during the thin film deposition process.

[0065] Compared with traditional single-point or random detection methods, this method has the advantages of standardized operation, stable data, and high measurement accuracy. It can provide accurate basis for subsequent temperature uniformity analysis and deposition process adjustment, and further improve the heating uniformity and overall performance consistency of the repaired ceramic heater.

[0066] In some embodiments of the present invention, after the heater deposits the thin film, the wafer is subjected to temperature testing to evaluate the deposition effect of the thin film. The specific steps are as follows: The heater was tested for temperature rise to see if the temperature rise curve after film deposition met the process requirements. The wafer is heated to the target temperature, and the temperature at each monitoring point on the wafer is evaluated. Based on the assessment results, the flow rate and direction of the industrial gases were adjusted.

[0067] Specifically, after the heater deposits a thin film, the present invention systematically evaluates the film deposition effect by performing temperature tests on the wafer, ensuring that the repaired ceramic heater can meet the requirements of the actual process for thermal response performance and temperature uniformity.

[0068] By conducting heating tests on the heater, the temperature-time curve during the heating process can be obtained, which can determine whether the heating performance after film deposition meets the set process specifications, especially the performance in terms of heating rate and temperature control response, and provide a basis for evaluating heat transfer efficiency.

[0069] Testing the temperature uniformity at various monitoring points on the wafer at the target temperature can comprehensively reflect the evenness of heat distribution on the heater surface, thereby indirectly verifying the consistency and integrity of thin film deposition. If temperature deviations are detected during testing, the flow rate and direction of industrial gases can be further optimized based on the results, thereby improving heat transfer conditions and enhancing overall process stability.

[0070] The above method not only establishes a closed-loop feedback mechanism between deposition effect and actual heating performance, but also provides a quantitative basis for dynamic adjustment of deposition process, effectively improving the adaptability and reliability of the repaired heater in semiconductor process environment.

[0071] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and all such modifications and variations fall within the scope defined by the appended claims.

Claims

1. A method for repairing a ceramic heater for semiconductor applications, characterized in that, Includes the following steps: The material parameters of the heater to be repaired were measured at different temperatures, and an interpolation function was formed by fitting the parameters. A three-dimensional model of the heater is established. After adding the material of the three-dimensional model in the simulation software, the material parameters are set, and the interpolation function is associated with it. Set the initial and boundary parameters of the simulation physics field, couple multiple physics fields, set the physics field coupling interface for the calculation, and realize the simulation calculation; The three-dimensional model is meshed; The thermal and mechanical parameter ranges of the thin film are preset, and a parametric scan is performed in the simulation software. The optimized thin film parameters are selected based on the simulation calculation results. Based on the optimized thin film parameters, the corresponding thin film is selected. Before the thin film deposition, the structural integrity of the heater to be repaired is scanned and evaluated, and the surface crack area of ​​the heater to be repaired is pre-treated by grinding. After film deposition, the film thickness is measured and the deposition effect is evaluated. Temperature uniformity is verified during wafer heating, and the deposition process is adjusted based on the test results. The surface condition of the heater is monitored during use, and replacement or repeated deposition is performed to repair any cracks found.

2. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, Material parameters include mechanical material parameters, thermal material parameters, and electrical material parameters.

3. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, Creating a three-dimensional model of the heater includes creating a three-dimensional model of the heater to be repaired in three-dimensional modeling software and then importing it into simulation software; or creating a three-dimensional model directly in simulation software.

4. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, The physical field parameters include the current physical field, the solid mechanical physical field, and the solid heat transfer physical field.

5. The method for repairing a semiconductor ceramic heater according to any one of claims 1-4, characterized in that, In the step of meshing the 3D model, after the mesh is divided using meshing software, it is imported into the simulation software. The 3D model is then meshed in the simulation software, and the mesh is statistically analyzed and its quality is evaluated using the simulation software.

6. The method for repairing a semiconductor ceramic heater according to claim 5, characterized in that, For regular components, a sweeping method is used to generate the mesh, while for irregular components, a free tetrahedral mesh is used. Thin layers can be treated with boundary layers.

7. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, The thermal and mechanical parameters of the thin film include thickness, thermal conductivity, coefficient of thermal expansion, and Young's modulus; in the simulation software, add the parameter names, parameter value list, parameter units, and select the parameter scan type: all combinations or specified combinations; The preset parameter range should refer to the parameter range of the wafer. Based on the temperature distribution and stress distribution in the simulation calculation results, the optimal thin film parameters are obtained.

8. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, The structural integrity of the heater to be repaired is scanned and evaluated using non-destructive testing equipment to confirm the depth and width of the cracks in the heater.

9. The repair method for a semiconductor ceramic heater according to claim 1, characterized in that, After the heater deposits the thin film, a film thickness gauge is used to measure the distance from the surface of the deposited film to the metal mesh in order to evaluate the deposition thickness. First, calibrate the film thickness gauge and determine the center of the circle on the upper surface. Starting from the horizontal radius, take a radius every 30 degrees and divide the radius into three equal parts. Measure the distance from the film surface to the metal mesh.

10. The method for repairing a semiconductor ceramic heater according to claim 9, characterized in that, After the heater deposits the thin film, the wafer is subjected to temperature testing to evaluate the deposition effect. The specific steps are as follows: The heater was tested for temperature rise to see if the temperature rise curve after film deposition met the process requirements. The wafer is heated to the target temperature, and the temperature at each monitoring point on the wafer is evaluated. Based on the assessment results, the flow rate and direction of the industrial gases were adjusted.

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