Reconfigurable advanced modular precursor delivery system (AMPDS)

Abstract

A precursor delivery device includes a frame having a plurality of openings, a container having a precursor, and a plurality of interchangeable side panels. The container is mounted in an interior volume formed by the frame. Each of the plurality of interchangeable side panels is removably secured to the frame to cover a corresponding one of the plurality of openings. At least one of the plurality of interchangeable side plates may be configured based on a precursor type associated with the precursor.

Description

[0001] Priority Statement This application claims priority to U.S. Patent Application Serial No. 63 / 585,015, filed on September 25, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The topics disclosed herein generally relate to systems, methods, apparatuses, and machine-readable media related to reconfigurable advanced modular precursor delivery systems (AMPDS) used in semiconductor substrate processing systems. Background Technology

[0003] Semiconductor substrate processing systems are used to process semiconductor substrates using techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulse deposition layer (PDL), plasma-enhanced pulse deposition layer (PEPDL) processing, and photoresist removal.

[0004] Current deposition process modules (or semiconductor substrate processing systems) use full-size precursor delivery systems, which can vary in size and design depending on the precursors they contain. These different sizes and designs can lead to time delays and increased costs when process modules need to be reconfigured. Furthermore, the housing (frame) design of existing precursor delivery systems can have a large area, occupying a significant portion of the process module, which can result in increased cost and inefficiencies, such as limiting the number of precursors available for substrate processing.

[0005] The background description provided herein presents the context of this disclosure. It should be noted that the information described in this section is intended to provide some background to the subject matter disclosed below and should not be considered as prior art. More specifically, the work of the currently designated inventors within the scope described in this background section, and aspects of the specification that could not be determined to be prior art at the time of filing, neither expressly nor imply an admission that they are prior art to this disclosure. Summary of the Invention

[0006] This article presents various apparatuses, methods, systems and computer programs related to AMPDS.

[0007] In one exemplary embodiment, the precursor delivery device includes a frame with multiple openings, a container (such as an ampoule) for storing the precursor, and multiple interchangeable side panels. The precursor delivery device may also include a controller. The container may be mounted within an internal volume formed by the frame. Each of the multiple interchangeable side panels is detachably secured to the frame to cover a corresponding opening among the multiple openings. At least one of the multiple interchangeable side panels may be configured based on a precursor type associated with the precursor. The controller is configured to generate a control signal to control the release of the precursor into a gas nozzle in the processing chamber via an output port associated with the container.

[0008] In another exemplary embodiment, the semiconductor substrate processing apparatus includes a nozzle, a chemical delivery system, a processing chamber, and a controller. The chemical delivery system includes at least a first precursor delivery device and a second precursor delivery device. The first precursor delivery device includes a first frame. The first precursor delivery device is configured to deliver a first precursor to the nozzle. The second precursor delivery device includes a second frame identical to the first frame. The second precursor delivery device is configured to deliver a second precursor to the nozzle. The processing chamber is configured to process a semiconductor substrate. The processing chamber is fluidly coupled to the nozzle. The controller is configured to generate a control signal such that at least one of the first and second precursors is released into the nozzle during processing of the semiconductor substrate disposed in the processing chamber.

[0009] In another exemplary embodiment, a method of treating a substrate in a treatment chamber includes configuring a chemical delivery system. The chemical delivery system includes a first precursor delivery device having a first frame and a second precursor delivery device having a second frame identical to the first frame. The method further includes configuring the first precursor delivery device with a hazardous treatment material (HPM) type precursor. The method further includes configuring the second precursor delivery device with a non-HPM type precursor. The method further includes attaching the chemical delivery system to a nozzle of the treatment chamber. The method further includes generating one or more control signals to control the delivery of one or both of the HPM type and non-HPM type precursors to the treatment chamber via the nozzle. Attached Figure Description

[0010] The figures in the accompanying drawings are merely illustrative examples of embodiments of this disclosure and are not intended to limit its scope.

[0011] Figure 1 This is a functional block diagram of an example substrate processing system in which examples of the present disclosure can be used.

[0012] Figure 2 A perspective view of a substrate processing system using multiple AMPDS according to an exemplary embodiment is shown.

[0013] Figure 3A perspective view of an exemplary AMPDS according to an exemplary implementation is shown.

[0014] Figure 4A , Figure 4B and Figure 4C A perspective view of a shared framework for different AMPDS that can be used in a substrate processing system according to an exemplary embodiment is shown.

[0015] Figure 5A and Figure 5B A perspective view of AMPDS according to an exemplary embodiment is shown, which shows a shared frame and multiple interchangeable side panels.

[0016] Figure 6 A perspective view of a disassembled AMPDS according to an exemplary embodiment is shown, for example. Figure 3 AMPDS.

[0017] Figure 7A , Figure 7B , Figure 7C and Figure 7D Different views of an AMPDS side panel with a gasket according to an exemplary embodiment are shown.

[0018] Figure 8A This is an example of an AMPDS for a non-hazardous precursor material (non-HPM) according to an exemplary implementation.

[0019] Figure 8B This is an example of an AMPDS for hazardous precursor materials (HPM) according to an exemplary implementation.

[0020] Figure 9A and Figure 9B This illustrates an example of a configurable opening in the side panel of an HPMAMPDS according to an exemplary embodiment.

[0021] Figure 9C and Figure 9D An example of a configurable opening in a non-HPMAMPDS side panel according to an exemplary embodiment is shown.

[0022] Figure 10 This is a flowchart of a method for processing a substrate in a processing chamber having multiple AMPDS according to an exemplary embodiment.

[0023] Figure 11 The block diagram shows an example of a machine on which one or more exemplary method implementations can be implemented or which controls one or more exemplary implementations. Detailed Implementation

[0024] The following description includes systems, methods, techniques, instruction sequences, and computer machine program products (e.g., stored on a machine-readable medium) that implement illustrative embodiments of this disclosure. In the following description, numerous specific details are summarized for purposes of explanation to provide a thorough understanding of an exemplary embodiment involving the intermittent retention of a purge gas flow within a processing chamber to remove residual deposits from the surfaces of the processing chamber. However, it will be apparent to those skilled in the art that this embodiment can be implemented without these specific details.

[0025] In this application, the terms "semiconductor wafer," "wafer," "substrate," "semiconductor substrate," and "wafer substrate" are used interchangeably. The terms "chamber," "reaction chamber," "deposition chamber," "reactor," "chemical isolation chamber," "processing chamber," "processing chamber," and "substrate processing chamber" are also used interchangeably.

[0026] One type of substrate processing system (also known as a substrate processing apparatus) may include a processing chamber containing top and bottom electrodes, with radio frequency (RF) power applied between the electrodes to excite a process gas into plasma for processing a semiconductor substrate within the processing chamber. Another type of substrate processing apparatus may include an ALD tool, a special type of CVD processing system in which an ALD reaction occurs between two or more chemicals introduced as process gases into a processing chamber (such as an ALD processing chamber). CVD processing systems can be configured to operate without plasma, while plasma-enhanced CVD (or PE-CVD) processing systems are configured to operate with plasma. Similarly, ALD processing systems can also be configured to operate with or without plasma. Process gases (such as precursor gases) are used to deposit thin films of material on a substrate (such as a silicon wafer used in the semiconductor industry) to form (e.g., over multiple ALD cycles). Precursor gases may be sequentially introduced from a gas source into the ALD processing chamber, causing the gas to react with the substrate surface to bond and form a deposited layer. For example, the substrate is typically exposed to a process gas comprising a first chemical substance (or combination of chemicals) to form an adhesion layer. One or more additional first chemical substances can be removed by evacuation or purging. The process gas may include at least a second chemical substance or a combination of chemical substances. At least a second chemical substance may be introduced to react with the adhesion layer to form a deposited material layer. The two chemical substances or combinations thereof may be explicitly selected to react with each other to form the deposited material layer.

[0027] Existing deposition process modules employ a full-size AMPDS housing design, which occupies valuable space on the module. In some aspects, AMPDS configurations may include two or three precursors. The disclosed techniques can be used to implement compact hardware designs, allowing at least three AMPDSs to be accommodated in the upper frame area of ​​the process module, and additional AMPDSs to be accommodated in the lower frame area.

[0028] The disclosed AMPDS configuration includes the use of a single shared frame (or support) as the baseline for the AMPDS used in the substrate processing apparatus (also referred to as the processing module). Furthermore, the AMPDS can be configured with multiple interchangeable side plates and specific hardware mounting structures selected for optional features. In this regard, both non-HPM and HPM precursors can utilize the disclosed AMPDS hardware design and use the same (shared) frame configuration. In some aspects, automated precursor body filling can be achieved via ampoule liquid level sensors and software control (e.g., using EtherCAT-based communication). By using the shared frame and multiple configurable, interchangeable side plates (e.g., with louvered openings or other mounting options for mounting additional components on the plates), the disclosed AMPDS is modular, enabling compact implementation and facilitating configuration and reconfiguration based on the required precursor and the associated modules or components for delivering such precursors via nozzles to the processing chamber.

[0029] Combination Figure 1 A more detailed description is provided of a substrate processing apparatus (or processing module) with a processing chamber and multiple AMPDS. Figure 2-9D This shows different configurations of AMPDS based on the disclosed technology. Figure 10 This is a flowchart of a method for processing substrates using process modules with multiple AMPDS.

[0030] Figure 1 This is a functional block diagram of an example substrate processing system 100, in which examples of the present disclosure can be used. Reference now is made to... Figure 1 An exemplary substrate processing system 100 is configured to perform the deposition shown in the figure. While a PECVD substrate processing system is shown as substrate processing system 100, a PEALD substrate processing system or other substrate processing systems (e.g., processing systems without plasma for deposition or etching) can be used for the cleaning techniques discussed herein. Substrate processing system 100 includes a processing chamber 102 that houses other components of the substrate processing system 100 and includes plasma. Processing chamber 102 includes a gas distribution device 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. In some embodiments, the substrate support may include one or more bases.

[0031] In some examples, the gas distribution device 104 may include a nozzle 109 that distributes process gas onto a substrate 108 and acts as an electrode to apply a radio frequency field that initiates ion bombardment. The nozzle 109 may include a rod (e.g., rod 162) having one end connected to a top surface of the processing chamber 102. A base portion (e.g., base 164) is generally cylindrical and extends radially outward from the other end of the rod, positioned at a distance from the top surface of the processing chamber 102. In some aspects, the base 164 includes one or more gas delivery plates (e.g., a lower gas delivery plate and an upper gas delivery plate). The substrate-facing surface of the lower gas delivery plate (also referred to as a panel) of the base 164 of the nozzle 109 includes a plurality of distribution holes through which the process gas (or gaseous material) flows. The gas distribution device 104 may be made of a metallic material and may act as an upper electrode. Alternatively, the gas distribution device 104 may be made of a non-metallic material and may include embedded electrodes. In other examples, the upper electrode may include a conductive plate, and the process gas may be introduced in another manner.

[0032] The substrate support 106 includes a conductive base plate 110 serving as a lower electrode. The base plate 110 supports a heating plate 112, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 114 may be disposed between the heating plate 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for allowing coolant to flow through it.

[0033] Radio frequency (RF) generation system 120 generates an RF voltage and outputs it to one of an upper electrode (such as gas distribution device 104) and a lower electrode (such as base plate 110 of substrate support 106). The other of the upper and lower electrodes may be DC grounded, AC grounded, or floating at ground terminal 143. In some examples, RF generation system 120 can provide dual-frequency power, including a high-frequency (HF) generator 121 and a low-frequency (LF) generator 122, which generate high-frequency and low-frequency power (at predetermined frequencies and power levels, respectively) and feed them to the upper or lower electrode (or nozzle) via matching and distribution network 124.

[0034] The chemical substance delivery system 130 (also known as a chemical substance delivery module, precursor delivery module, or gas delivery module) includes process gas sources (e.g., one or more precursor tanks) 132-1, ..., 132-N (collectively referred to as process gas sources 132), where N is an integer greater than 1. The process gas sources are fluidly coupled (e.g., via multiple gas lines) to corresponding valves 134-1, ..., 134-N. Although... Figure 1 The process gas source is shown to supply nitrogen (N2) and helium (He), but other gases may also be used.

[0035] Process gas source 132 provides one or more mixtures of process gases, dopants, carrier gases, liquid precursors, precursor gases, purge gases, and purging gases. In some examples, chemical delivery system 130 delivers precursor gases, such as mixtures of tetraethyl orthosilicate (TEOS) gases, gases including oxygen and argon (Ar) gases, and dopants including triethyl phosphate (TEPO) and triethyl borate (TEB), during deposition. In some examples, dopant diffusion occurs from the gas phase. For example, a carrier gas (such as nitrogen, argon, or other gases) enriched with the desired dopants (also in gaseous form, such as TEPO and TEB) is supplied to the silicon wafer for concentration equilibration. In subsequent processes, the silicon wafer may be placed in a quartz tube and heated to a specific temperature.

[0036] Back Figure 1 Process gas source 132 is connected to mixing manifold 140 via valves 134-1, ..., 134-N (collectively referred to as valves 134) and mass flow controllers (MFCs) 136-1, ..., 136-N (collectively referred to as MFC 136). Process gas is delivered to mixing manifold 140 and mixed therein. Mixing manifold 140 is fluidly connected to valves 178-2 and 178-3 via supply line 183, which are fluidly coupled to nozzle 109 via supply line 182. More specifically, the outputs of valves 178-2 and 178-3 are delivered to processing chamber 102 via supply line 182, thereby connecting mixing manifold 140 to a first inlet 166 on stem 162 of nozzle 109. In some respects, manifolds 140 and 180 are heated to a predetermined temperature to deliver precursor gas to processing chamber at a specific temperature (or temperature range).

[0037] In some applications, there may be one or more valves between the mixing manifold 140 and the first inlet 166. In some embodiments, the substrate processing system 100 includes AMPDS 173-1, 173-2, 173-4, and 173-4, configured to supply precursor gas (or precursor) to the processing chamber 102 via a first inlet 166 and a second inlet 168 at the rod 162 of the nozzle 109. AMPDS 173-1 includes MFC 174-1, ampoule 176-1, and valve 178-1. AMPDS 173-2 includes MFC 174-2, ampoule 176-2, and valve 178-2. AMPDS 173-3 includes MFC 174-3, ampoule 176-3, and valve 178-3. AMPDS 173-4 includes MFC 174-4, ampoule 176-4, and valve 178-4. Ampoules 176-1 to 176-4 are configured to contain precursors, which can be HPM type or non-HPM type.

[0038] although Figure 1The disclosure shows that each AMPDS 173-1, 173-2, 173-4, and 173-4 includes an MFC, ampoules, and valves, but this disclosure is not limited to this; each AMPDS may also include other components (e.g., level sensors, pneumatic valve assemblies, heaters, pressure gauges, valve sensors, pressure gauge monitors, controllers, etc.). In some aspects, AMPDS 173-1, 173-2, 173-3, and 173-4 can be configured with the same frame, but interchangeable side plates can be selected for the openings in the frame, allowing a particular set of components to be mounted within the frame cavity and on one or more side plates (e.g., depending on the type of precursor included in each AMPDS). The disclosed modular design of AMPDS enables the flexibility to use different precursor configurations with different numbers of channels (CHs) on the same process module (e.g., 2-CH, 3-CH, or 4-CH versions on the same tooling). This example of AMPDS configuration relates to a modular design (e.g., using the same frame with interchangeable and individually configurable side plates), which will combine Figure 2-11 Let's have a discussion.

[0039] MFCs 174-1 to 174-4 receive propellant gas or carrier gas via a supply line 170 connected to the output of at least one valve 134 (e.g., valve 134-N). In some aspects, the propellant gas / carrier gas from the supply line 170 is supplied to a manifold 172, which distributes the propellant gas / carrier gas to one or more ampoules 176-1 to 176-4 (e.g., ...). Figure 1 The output of ampoule 176-1 shown. In some respects, propulsion / carrier gas from supply line 170 is also supplied to manifold 180, which distributes the propulsion / carrier gas to the output of ampoule 176-4 and processing chamber 102.

[0040] In some respects, ampoule 176-2 supplies a non-HPM type precursor to the first inlet 166 of nozzle 109 via supply line 182, and ampoule 176-4 supplies an HPM type precursor to the second inlet 168 of nozzle 109 via supply line 184. Although Figure 1 The display substrate processing system 100 includes four AMPDS, but this disclosure is not limited to this, and different numbers can be used (e.g., fewer than four or more than four). Furthermore, each AMPDS can be configured with different types of precursors (HPM-based or non-HPM precursors depending on the substrate processing formulation). In some aspects, AMPDS 173-1, 173-2, 173-4, and 173-4 are based on… Figure 2-11 The configuration discussed is based on publicly available settings.

[0041] In some embodiments, the substrate processing system 100 includes a remote plasma source 152 configured to generate plasma and radicals from a cleaning gas and a purge gas. In some aspects, the remote plasma source 152 is provided by a process gas source 132 or other process gas source. An MFC 156 is coupled upstream of the remote plasma source 152. The cleaning gas and purge gas may be supplied to a nozzle 109 (e.g., through a first inlet 166) for in-situ cleaning of the processing chamber 102. More specifically, the cleaning gas and purge gas are supplied to the nozzle 109 via a supply line 158, a valve 154, and a rod 162. In some embodiments, valve 154 and MFC 156 may not be present. In some aspects, the remote plasma source 152 may be part of a chemical delivery system 130.

[0042] Temperature controller 142 can be connected to multiple thermal control elements (TCEs) 144 disposed in the heating plate 112. For example, TCEs 144 can include, but are not limited to, individual large TCEs (macroTCEs) corresponding to each zone in the multi-zone heating plate, and miniature TCE arrays disposed across multiple zones of the multi-zone heating plate. Temperature controller 142 can be used to control multiple TCEs 144 to control the temperature of the substrate support 106 and the substrate 108. Although Figure 1 The present disclosure shows a TCE in the substrate support structure, but is not limited thereto, and the TCE can be configured in other areas of the chamber (such as the chamber wall). Such a TCE configured in the chamber wall can control the temperature of the chamber wall, thereby suppressing deposition and facilitating the chamber cleaning techniques discussed herein (e.g., by increasing the reactivity of the cleaning gas reaching the wall surface).

[0043] Temperature controller 142 may communicate with coolant assembly 146 to control the flow rate of coolant through channel 116. For example, coolant assembly 146 may include a coolant pump and a reservoir. Temperature controller 142 operates coolant assembly 146 to selectively allow coolant to flow through channel 116, thereby cooling substrate support 106. Valve 148 (e.g., gate valve) and pump 150 (e.g., drain pump) may be used to control pressure and vent reactants from processing chamber 102. In an exemplary embodiment, processing chamber may include more than one gate valve (or other type of valve) for venting reactants (e.g., process gas or purge gas) and purging gas from processing chamber.

[0044] System controller 160 can be used to control components of substrate processing system 100. For example, system controller 160 can be configured to control cleaning gas, purge gas, or precursor supplied via a first inlet 166 or a second inlet 168 of nozzle 109. System controller 160 can be configured to perform other control functions, such as dynamically monitoring and adjusting the surface temperature of the gas line heating element within chemical delivery system 130. System controller 160 can also be configured to perform pressure control functions, such as monitoring and regulating the pressure within processing chamber 102. Although a separate controller is shown, temperature controller 142 can be implemented within system controller 160.

[0045] In some respects, system controller 160 may perform control functions associated with each AMPDS 173-1, 173-2, 173-4, and 173-4. In some respects, AMPDS 173-1, 173-2, 173-4, and 173-4 may each include a controller that is monitored (e.g., configured or controlled) by system controller 160.

[0046] Figure 2 A perspective view of a substrate processing system using multiple AMPDS according to an exemplary embodiment is shown. (Reference) Figure 2 The substrate processing system 200 includes a gas delivery section 202, a nozzle section 204 (e.g., having one or more nozzles), a deposition chamber section 206 (e.g., having one or more processing chambers), and a gas chamber 208. In some aspects, the gas chamber 208 includes a chemical delivery system (e.g., Figure 1 Chemical substance delivery system 130).

[0047] In some implementations, the gas delivery section accommodates multiple AMPDS, such as AMPDS 210A (which can be used with...). Figure 1 AMPDS 173-1 is the same as AMPDS 210B (which can be used with AMPDS 173-1). Figure 1 The AMPDS 173-2 is the same as the AMPDS 210D (which can be used with...). Figure 1 (The same as AMPDS 173-4). In some respects, AMPDS 210C (can be compared with...) Figure 1 The same as AMPDS173-3 in the above can be configured on the other side of the gas delivery section 202 (e.g., near the gas box 208, such as...). Figure 2 (As shown). Other configurations and different numbers of AMPDS can also be used in the substrate processing system 200.

[0048] Figure 3 A perspective view of an exemplary AMPDS 300 according to an exemplary embodiment is shown. Reference Figure 3AMPDS 300 can be an AMPDS configured with an HPM-type precursor. In some aspects, AMPDS 300 includes a frame 302, interchangeable side panels (or side covers) (e.g., Figure 3 The front side panel 306, top side panel 304, and left side panel 308 are visible in the image, as well as additional components (or features) mounted on (or associated with) one or more side panels (e.g., components or features based on the type of precursor for AMPDS storage and delivery).

[0049] For example, the AMPDS 300 includes a continuous level sensor controller 314 (e.g., a continuous level sensor for controlling continuous sensing of the precursor level), a discrete level sensor controller 316 (e.g., a discrete level sensor for controlling discrete sensing of the precursor level), and a pneumatic valve assembly 318 (e.g., a multi-tube diaphragm through-hole), all of which are mounted on the top side plate 304.

[0050] In some respects, the AMPDS 300 also includes a controller 310 and a differential pressure sensor 312 (also known as a pressure gauge monitor) mounted on the left side panel 308.

[0051] In some respects, one or more side panels may be configured with louvered openings for ventilation (e.g., opening 305 on top side panel 304) and other features (e.g., handle 307 on front side panel 306). Figure 4A-9D Other features and configurations of the disclosed AMPDS are shown, which will be discussed below.

[0052] Figure 4A , Figure 4B and Figure 4C Corresponding perspective views 400A, 400B, and 400C are shown according to exemplary embodiments of a shared framework (e.g., framework 302) that can be used in different AMPDS of a substrate processing system. Reference Figures 4A-4C The frame 302 is configured with multiple openings, which can be made up of corresponding multiple interchangeable side panels (e.g., such as...). Figures 5A-5B (As shown) Coverage. More specifically, frame 302 is configured with a front opening 402, a right opening 404, a left opening 406, a left rear opening 408, a rear opening 410, a right rear opening 412 and a top opening 414.

[0053] In some aspects, frame 302 is configured with a drip tray 416, which includes a precursor output port 418 for discharging the precursor to a downstream processing chamber (e.g., via a supply line fluidly coupled to the output port). In some aspects, drip tray 416 may include one or more sensors (e.g., overflow sensors). Figures 4A-4C Not displayed.

[0054] Figure 5A and Figure 5B Corresponding perspective views 500A and 500B of AMPDS are shown, illustrating a shared frame (e.g., frame 302) and multiple interchangeable side panels according to an exemplary embodiment. More specifically, frame 302 is configured with a front side panel 502 (for front opening 402), a right side panel 504 (for right opening 404), a left side panel 506 (for left opening 406), a left rear side panel 508 (for left rear opening 408), a rear side panel 510 (for rear opening 410), a right rear side panel 512 (for right rear opening 412), and a top side panel 514 (for top opening 414). Figures 5A-5B As shown, side panels 502-514 can be configured with different openings or features (e.g., such as...). Figures 7A-7D (The handle or half-shear feature shown).

[0055] Figure 6 A perspective view of an AMPDS disassembled according to an exemplary embodiment is shown, for example. Figure 3 AMPDS. Reference Figure 6 AMPDS 600 can be an AMPDS configured with an HPM-type precursor. In some aspects, AMPDS 600 includes a frame 601, interchangeable side panels (or side covers) (e.g., Figure 6 The front side panel 602, right side panel 604, left side panel 606 and top side panel 608 visible in the frame cavity, as well as additional components (or features) within the frame cavity or mounted on one or more side panels (or associated with one or more side panels) (e.g., components or features of the precursor type based on AMPDS storage and delivery).

[0056] For example, the AMPDS 600 includes a continuous level sensor controller 614 (e.g., for controlling a continuous level sensor to continuously sense the precursor level), a discrete level sensor controller 616 (e.g., for controlling a discrete level sensor to discretely sense the precursor level), and a pneumatic valve assembly 618 (e.g., a multi-tube diaphragm through-hole), all mounted on the top side plate 608. The AMPDS 600 also includes a controller 610 and a differential pressure sensor 612 mounted on the left side plate 606. The AMPDS 600 also includes a heater 620, a pressure gauge 622, an MFC 624, a valve sensor 626, and other sensors (e.g., Figure 6 (Continuous level sensor and discrete level sensor not shown).

[0057] In some aspects, the AMPDS controller (e.g., controller 610) is configured to control the function of AMPDS components within the cavity of frame 601 and on a side plate removably attached to the cavity opening. For example, controller 610 controls the function of a continuous level sensor controller 614, a discrete level sensor controller 616, a pneumatic valve assembly 618, a differential pressure sensor 612, a heater 620, a pressure gauge 622, an MFC 624, and a valve sensor 626. In some embodiments, controller 610, pressure gauge 622, and MFC 624 are configured to communicate via an EtherCAT-based protocol.

[0058] Figure 7A , Figure 7B , Figure 7C and Figure 7D Different views of an AMPDS side panel with gaskets according to an exemplary embodiment are shown. In some embodiments, one or more side panels of the AMPDS may be configured with gaskets and semi-shear features. More specifically, Figure 7A A perspective view 709 shows a side panel 702, which is configured with a gasket 704 and a semi-shear feature 706.

[0059] Figure 7B yes Figure 7A A perspective view of the middle section 708, in which the gasket 704 is not attached to the side plate 702. Figure 7C A perspective view 710 of part 708, wherein a gasket 704 is attached to a side plate 702.

[0060] Figure 7D A cross-sectional view 712 shows the side panel 702 (with gasket 704 attached to the panel), in which the side panel is detachably attached to the AMPDS frame 707. In some respects, the semi-shear feature 706 allows the side panel 702 to be installed and tightened to a standard value while maintaining optimal compression of the gasket 704 for sealing.

[0061] Figure 8A This is an exemplary side view of the AMPDS 800A for non-hazardous precursor materials (non-HPM) according to an exemplary embodiment, after the front side panel has been removed. Reference Figure 8A The AMPDS 800A includes a frame 802A and interchangeable side panels. Figure 8A (Not mentioned in the text), discrete level sensor controller 804A (e.g., for controlling discrete level sensor 810A, which performs discrete sensing of precursor liquid level), pneumatic valve assembly 806A (e.g., multi-tube baffle through-hole), controller 808A, MFC 812A, pressure gauge 814A, valve 816A (which has a valve sensor), and heater 818A. Heater 818A is configured to surround the evaporator ( Figure 8A (Not mentioned in the text).

[0062] Figure 8B This is an example side view of the AMPDS 800B for hazardous precursor materials (HPM) according to an exemplary embodiment, with the front side panel removed. Reference Figure 8B The AMPDS 800B includes a frame 802B and interchangeable side panels. Figure 8B (Not mentioned in the text), continuous level sensor controller 806B (e.g., for controlling continuous level sensor 814B, which performs continuous sensing of precursor level), discrete level sensor controller 804B (e.g., for controlling discrete level sensor 816B, which performs discrete sensing of precursor level), pneumatic valve assembly 808B (e.g., multi-tube diaphragm through-hole), controller 810B, differential pressure sensor 812B, MFC 818B, pressure gauge 820B, valve 822B (with valve sensor) and heater 824B.

[0063] Heater 824B is configured to enclose, for example, heated flow-through vapor (FOV) ampoules. Figure 8B (Not mentioned in the text). Heated FOV ampoules facilitate the flow of carrier gas over the surface of the liquid chemical to entrain vapor in the headspace (rather than causing the carrier gas to bubble through the liquid chemical).

[0064] The differential pressure sensor 812B may include two sampling tubes, one sampling inside the AMPDS 800B and the other sampling downstream of the AMPDS's discharge section. The differential pressure sensor 812B can be used to ensure sufficient venting flow to purge any chemicals in the event of a leak or spill. An operational interlock of the gas delivery system ensures that without sufficient venting flow, the valves of the AMPDS 800B will not operate, preventing the flow of chemicals to the processing chamber.

[0065] Figure 9A and Figure 9B Corresponding perspective view 900A and front view 900B show an example of a configurable opening in a side panel 902 for an HPM AMPDS according to an exemplary embodiment. Reference Figures 9A-9B Side panel 902 can be the rear side panel of the AMPDS. In some aspects, side panel 902 is configured with openings based on the front body type to accommodate specific components of the AMPDS. In some aspects, side panel 902 includes metal mating through openings 904 and 908, a heater AC connector opening 906, and a housing exhaust outlet opening 910. In some aspects, a different set of openings can be configured for the side panel 902 of the HPM AMPDS.

[0066] Figure 9C and Figure 9DPerspective view 900C and front view 900D show an example of a configurable opening in the side panel 912 of a non-HPM AMPDS according to an exemplary embodiment. Reference Figure 9C-9D Side panel 912 can be a rear side panel for non-HPM AMPDS. In some aspects, side panel 912 is configured with openings based on the front body type to accommodate specific components of the AMPDS. In some aspects, side panel 912 includes a metal mating through opening 914, a heater AC connector opening 916, and a metal mating partition opening 918. In some aspects, a different set of openings can be configured for side panel 912 for non-HPM AMPDS.

[0067] Figure 10 This is a flowchart of a method 1000 for processing a substrate in a processing chamber having multiple AMPDS, according to an exemplary embodiment. Method 1000 includes operations 1002, 1004, 1006, 1008, and 1010, which can be performed by control logic (or the control logic configures or causes other modules to perform functions), such as by system controller 160 and... Figure 1 One or more controllers of AMPDS 173-1 to 173-4 are executed. For example, system controller 160 and one or more controllers of AMPDS 173-1 to 173-4 may be configured to manage the operation of substrate processing system 100, including the configuration, startup and shutdown of one or more AMPDS 173-1 to 173-4 related to substrate processing.

[0068] In operation 1002, a chemical substance delivery system is configured. For example, regarding... Figure 1 The chemical substance delivery system includes a first precursor delivery device (e.g., AMPDS 173-4) (which includes a first frame) and a second precursor delivery device (e.g., AMPDS 173-2) (which includes a second frame). The second frame may be identical to the first frame (as per [reference to...]). Figure 4A-5B (As discussed).

[0069] In operation 1004, the first precursor delivery device (e.g., AMPDS 173-4) is configured with a precursor of the hazardous materials handling process (HPM) type.

[0070] In operation 1006, the second precursor delivery device (e.g., AMPDS 173-2) is configured with a non-HPM type precursor.

[0071] In operation 1008, the chemical delivery system is fluidly coupled to the nozzle (e.g., nozzle 109) of the treatment chamber (e.g., treatment chamber 102).

[0072] In operation 1010, one or more control signals are generated (e.g., generated by controller 160 and AMPDS controller) to control the delivery of one or both of the HPM type precursor and the non-HPM type precursor to the treatment chamber via the nozzle.

[0073] Figure 11 This is a block diagram illustrating an example of machine 1100 on which one or more exemplary method implementations can be implemented, or on which one or more exemplary implementations can be controlled. In alternative implementations, machine 1100 may operate as a standalone device or be connectable (e.g., network-connected) to other machines. In a networked deployment, machine 1100 may operate as a server machine, a client machine, or both in a server-client network environment. In one example, machine 1100 may be used as a peer machine in a peer-to-peer (P2P) network (or other distributed network) environment. Furthermore, while only a single machine 1100 is shown, the term "machine" should also be considered as encompassing any collection of machines that individually or jointly execute one or more sets of instructions to perform any or more of the methods described herein, for example, via cloud computing, Software as a Service (SaaS), or other computer cluster configurations.

[0074] The examples described herein may include logic, components, or mechanisms, or may be operated by logic, components, or mechanisms. A circuit system is a collection of circuits implemented in a tangible entity containing hardware (e.g., simple circuits, gates, logic). Circuit system components can be flexible over time and due to the variability of the basic hardware. A circuit system contains components that can perform a specified operation individually or in combination during operation. In some aspects, the hardware of a circuit system can be designed in a fixed and immutable manner to perform a specific operation (e.g., hardwired). In another example, the hardware of a circuit system may include variable-connection physical components (e.g., execution units, transistors, simple circuits) including a computer-readable medium that is modified physically (e.g., magnetically, electrically, by the movable arrangement of particles with invariant mass) to encode instructions for a specific operation. When connecting physical components, the basic electrical properties of the hardware components are changed (e.g., from an insulator to a conductor, and vice versa). Instructions enable embedded hardware (e.g., execution units or loading mechanisms) to generate components of a circuit system in the hardware via variable connections to perform a specific operation when in operation. Therefore, when the device is in operation, the computer-readable medium is communicatively coupled to other components of the circuit system. In some aspects, any of the physical components can be used in more than one component of more than one circuit system. For example, in operation, an execution unit may be used in a first circuit of a first circuit system at one point in time, and then reused at a different time by a second circuit of the first circuit system, or by a third circuit of the second circuit system.

[0075] Machine (such as computer system) 1100 may include hardware processor 1102 (such as central processing unit (CPU), hardware processor core, graphics processing unit (GPU), or any combination thereof), main memory 1104, and static memory 1106, some or all of which may communicate with each other via interconnect (such as bus) 1108. Machine 1100 may also include display device 1110, alphanumeric input device 1112 (e.g., keyboard), and user interface (UI) navigation device 1114 (e.g., mouse). In one example, display device 1110, alphanumeric input device 1112, and UI navigation device 1114 may be a touch screen display. Machine 1100 may additionally include mass storage device (e.g., drive unit) 1116, signal generation device 1118 (e.g., speaker), network interface device 1120, and one or more sensors 1121. Machine 1100 may include output controller 1128 (e.g., serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC)) connection) to communicate with or control one or more peripheral devices (e.g., printer, card reader).

[0076] In one exemplary embodiment, hardware processor 1102 may perform the functions of system controller 160 and one or more controllers of AMPDS 173-1 to 173-4, as well as any control logic discussed above, to configure and control the functions described herein related to configuring AMPDS and processing substrates in a processing chamber having multiple AMPDS.

[0077] Mass storage device 1116 may include machine-readable medium 1122 on which one or more sets of data structures or instructions 1124 (e.g., software) may be stored, which implement or be used by any or more of the techniques or functions described herein. Instructions 1124 may also reside wholly or at least partially within main memory 1104, static memory 1106, or hardware processor 1102 during execution by machine 1100. In one example, one or any combination of hardware processor 1102, main memory 1104, static memory 1106, or mass storage device 1116 may constitute the machine-readable medium.

[0078] Although machine-readable medium 1122 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (e.g., a centralized or distributed database and / or associated cache and server) configured to store one or more instructions 1124.

[0079] The term "machine-readable medium" can include: any medium capable of storing, encoding, or carrying instructions 1124 for execution by machine 1100 and for causing machine 1100 to perform any or more of the techniques of this disclosure; or any medium capable of storing, encoding, or carrying data structures used by or associated with such instructions 1124. Examples of non-limiting machine-readable media may include solid-state memory and optical and magnetic media. In one example, a mass machine-readable medium includes a machine-readable medium 1122 having a plurality of particles with invariant mass (e.g., rest mass). Therefore, a mass machine-readable medium does not propagate signals instantaneously. Specific examples of mass machine-readable media may include non-volatile memory, such as semiconductor memory devices (e.g., electronically programmable read-only memory (EPROM), electronically eraseable programmable read-only memory (EEPROM)) and flash memory devices; disks, such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

[0080] Instruction 1124 can be further transmitted or received on communication network 1126 via network interface device 1120 using the transmission medium.

[0081] The aforementioned technologies can be implemented via any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that the functional units or capabilities described in this specification may be referred to or labeled as components or modules to more specifically emphasize their implementation independence. Such components can be embodied in any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit comprising custom-made very large-scale integrated (VLSI) circuitry, or gate arrays, off-the-shelf semiconductors such as logic chips, transistors, or other discrete components. Components or modules may also be implemented in programmable hardware devices, such as field-programmable gate arrays, programmable array logic, programmable logic devices, etc. Components or modules may also be implemented in software and executed by various types of processors. The identified components or modules of executable code may, for example, comprise one or more physical or logical blocks of computer instructions, which may, for example, be organized as objects, programs, or functions. However, the executable files of the identified components or modules do not need to be physically placed together, but may include different instructions stored in different locations that, when logically connected together, comprise the components or modules and implement the stated purpose of the components or modules.

[0082] In practice, executable code components or modules can be single instructions or multiple instructions, and can even be distributed across several different code segments, different programs, and across several memory devices or processing systems. Specifically, certain aspects of the programs (e.g., code rewriting and code analysis) can occur on a different processing system than the processing system in which the code is deployed (e.g., a computer embedded in a sensor or robotic arm) (e.g., a computer in a data center). Similarly, operational data can be identified and described within the components or modules herein, and can be embodied in any suitable form and organized within any suitable type of data structure. Operational data can be collected as a single data set or can be distributed across different locations, including across different storage devices, and can exist at least partially as electronic signals on a system or network. Components or modules can be passive or active, including agents operable to perform desired functions.

[0083] In view of the above-mentioned embodiments, this application discloses the following list of examples, wherein a feature of one example, or more than one feature of one example, may be combined alone or in combination with one or more features of one or more further examples, which are further examples within the scope of the disclosure of this application.

[0084] Example 1 is a precursor delivery device comprising: a frame having a plurality of openings; a container for storing a precursor, the container being mounted within an internal volume formed by the frame; a plurality of interchangeable side panels, each of the plurality of interchangeable side panels being detachably fixed to the frame to cover a corresponding opening among the plurality of openings, and at least one of the plurality of interchangeable side panels being configurable based on a precursor type associated with the precursor; and a controller configured to generate a control signal to control the release of the precursor into a gas nozzle of a processing chamber via an output port associated with the container.

[0085] In Example 2, the subject matter described in Example 1 includes a subject matter having the following characteristics: the precursor type associated with the precursor is either a hazardous treatment material (HPM) type or a non-HPM type.

[0086] In Example 3, the subject matter described in Example 2 includes a subject matter having the following characteristics: the plurality of interchangeable side panels include a front side panel, a right side panel, a left side panel, a left rear side panel, a rear side panel, a right rear side panel, and a top side panel.

[0087] In Example 4, the subject matter described in Example 3 includes a subject matter having the following characteristics: the left side panel includes a configurable opening to accommodate the controller.

[0088] In Example 5, the subject matter described in Example 4 includes a subject matter having the following characteristics: the precursor is of the HPM type, and the precursor delivery device further includes: a differential pressure sensor mounted on the left side plate, the differential pressure sensor being configured to monitor the exhaust flow rate of the precursor delivery device.

[0089] In Example 6, the subject matter described in Examples 3-5 includes a subject matter having the following characteristics: the precursor is of the HPM type, and the rear panel includes: one or more through openings for metal fittings; an AC connector opening for the heater; and a housing exhaust outlet opening.

[0090] In Example 7, the subject matter described in Example 6 includes: a discrete level sensor configured to sense the level of the precursor in discrete increments; and a continuous level sensor configured to perform continuous sensing of the level of the precursor.

[0091] In Example 8, the subject matter described in Example 7 includes: a discrete level sensing controller configured to control the operation of the discrete level sensor; and a continuous level sensing controller configured to control the operation of the continuous level sensor.

[0092] In Example 9, the subject matter described in Example 8 includes a subject matter having the following characteristics: the discrete liquid level sensing controller and the continuous liquid level sensing controller are mounted on the top side plate.

[0093] In Example 10, the subject matter described in Examples 4-9 includes a subject matter having the following characteristics: the precursor is of the non-HPM type, and the rear panel includes: a metal mating through opening; a heater AC connector opening; and a metal mating partition opening.

[0094] In Example 11, the subject matter described in Examples 3-5 includes: a discrete liquid level sensor configured to sense the liquid level of the precursor in discrete increments.

[0095] In Example 12, the subject matter described in Example 11 includes: a discrete liquid level sensing controller configured to control the operation of the discrete liquid level sensor.

[0096] In Example 13, the subject matter described in Example 12 includes a subject matter having the following characteristics: the discrete liquid level sensing controller is mounted on the top side plate.

[0097] In Example 14, the subject matter described in Examples 1-13 includes: a pressure gauge configured to measure at least the pressure of the precursor within the container; and a mass flow controller (MFC) configured to control the flow of the precursor to the gas nozzle.

[0098] In Example 15, the subject matter described in Example 14 includes a subject matter having the following characteristics: the control signal also controls the pressure gauge and the MFC.

[0099] In Example 16, the subject matter described in Example 15 includes a subject matter having the following characteristics: the controller, the pressure gauge, and the MFC are configured to operate according to an EtherCAT-based protocol.

[0100] Example 17 is a semiconductor substrate processing apparatus, the apparatus comprising: a nozzle; a chemical substance delivery system including a first precursor delivery device including a first frame configured to deliver a first precursor to the nozzle; and a second precursor delivery device including a second frame configured to deliver a second precursor to the nozzle, the second frame being identical to the first frame; a processing chamber for processing a semiconductor substrate, the processing chamber being fluidly coupled to the nozzle; and a controller configured to generate a control signal such that, during processing of the semiconductor substrate disposed in the processing chamber, at least one of the first precursor and the second precursor is released into the nozzle.

[0101] In Example 18, the subject matter described in Example 17 includes a subject matter having the following characteristics: the first precursor delivery device includes: a first plurality of interchangeable side plates, each of the first plurality of interchangeable side plates being detachably fixed to the first frame to cover a corresponding opening in a plurality of openings in the first frame, and at least one of the first plurality of interchangeable side plates being configurable based on a precursor type associated with the first precursor.

[0102] In Example 19, the subject matter described in Example 18 includes a subject matter having the following characteristics: the second precursor delivery device includes: a second plurality of interchangeable side plates, each of the second plurality of interchangeable side plates being detachably fixed to the second frame to cover a corresponding opening in a plurality of openings in the second frame, and at least one of the second plurality of interchangeable side plates being configurable based on a precursor type associated with the second precursor.

[0103] In Example 20, the subject matter described in Example 19 includes a subject matter having the following characteristics: the precursor type associated with the first precursor is a hazardous treatment material (HPM) type, and the precursor type associated with the second precursor is a non-HPM type.

[0104] In Example 21, the subject matter described in Example 20 includes a subject matter having the following characteristics: the first precursor delivery device includes a differential pressure sensor mounted on at least one of the first plurality of interchangeable side plates, the differential pressure sensor being configured to monitor the exhaust flow rate of the first precursor delivery device.

[0105] In Example 22, the subject matter described in Example 21 includes a subject matter having the following characteristics: the second precursor delivery device includes: a discrete level sensor configured to sense the level of the precursor in discrete increments; and a discrete level sensing controller configured to control the operation of the discrete level sensor, wherein the discrete level sensing controller is mounted on at least one of the second plurality of interchangeable side panels.

[0106] In Example 23, the subject matter described in Examples 21-22 includes a subject matter having the following characteristics: at least one of the first plurality of interchangeable side panels and at least one of the second plurality of interchangeable side panels.

[0107] Example 24 is a method for processing a substrate in a processing chamber, the method comprising: configuring a chemical substance delivery system including a first precursor delivery device and a second precursor delivery device, the first precursor delivery device including a first frame and the second precursor delivery device including a second frame identical to the first frame; configuring the first precursor delivery device with a hazardous process material (HPM) type precursor; configuring the second precursor delivery device with a non-HPM type precursor; coupling the chemical substance delivery system to a nozzle of the processing chamber; and generating one or more control signals to control the delivery of one or both of the HPM type precursor and the non-HPM type precursor to the processing chamber via the nozzle.

[0108] In Example 25, the subject matter described in Example 24 includes: detachably securing a first plurality of interchangeable side panels to the first frame of the first precursor conveying device to cover corresponding openings among a plurality of openings in the first frame.

[0109] In Example 26, the subject matter described in Example 25 includes a subject matter having the following characteristics: at least one of the first plurality of interchangeable side panels can be configured based on the first precursor delivery device storing the HPM-type precursor.

[0110] In Example 27, the subject matter described in Example 26 includes: using a differential pressure sensor to monitor the exhaust flow rate of the first precursor delivery device, the differential pressure sensor being mounted on at least one of the first plurality of interchangeable side plates.

[0111] In Example 28, the subject matter described in Examples 25-27 includes: detachably securing a second plurality of interchangeable side panels to the second frame of the second precursor conveying device to cover corresponding openings among a plurality of openings in the second frame.

[0112] In Example 29, the subject matter described in Example 28 includes a subject matter having the following characteristics: at least one of the second plurality of interchangeable side panels can be configured based on the second precursor delivery device that stores the non-HPM type precursor.

[0113] In Example 30, the subject matter described in Example 29 includes: monitoring the level of the non-HPM precursor in discrete increments using a discrete level sensor; and controlling the monitoring using a discrete level sensing controller mounted on at least one of the second plurality of interchangeable side panels.

[0114] Example 31 is at least one machine-readable medium that includes instructions that, when executed by the processing circuitry, cause the processing circuitry to perform operations to implement any of Examples 1-30.

[0115] Example 32 is an apparatus that includes a manner configured to implement any of Examples 1-30.

[0116] Example 33 is a system that implements any one of Examples 1-30.

[0117] Example 34 is a method that can be used to implement any of Examples 1-30.

[0118] In this specification, multiple instances may implement a component, operation, or structure described as a single instance. While individual operations of one or more methods are depicted and described as separate operations, one or more of these separate operations may be performed simultaneously, and they need not be performed in the order shown. Structures and functions are presented as separate components; for example, configurations may be implemented as combined structures or components. Similarly, structures and functions presented as single components may be implemented as separate components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter herein.

[0119] The embodiments described herein are presented in sufficient detail to enable those skilled in the art to implement the disclosed teachings. Other embodiments may be used and derived therefrom, allowing for structural and logical substitutions and changes without departing from the scope of this disclosure. Therefore, this specific embodiment should not be considered limiting, and the scope of the various embodiments is defined only by the full scope of the appended claims and their equivalents.

[0120] The claims may not list every feature disclosed herein, as embodiments may feature a subset of said features. Furthermore, embodiments may include fewer features than those disclosed in a particular example. Therefore, the following claims are incorporated into the detailed description, wherein each claim stands alone as a separate embodiment.

[0121] When used herein, the term "or" may be interpreted in a sense of exclusivity or exclusivity. Furthermore, multiple instances may be provided for use with a single instance of a resource, operation, or structure described herein. Moreover, the boundaries between various resources, operations, modules, tools, and data storage are arbitrary, and a particular operation is shown in the context of a specific illustrative configuration. Other allocations of functionality are contemplated and may fall within the scope of various embodiments of this disclosure. Generally, in the examples, structures and functions are presented as separate resources, and configurations may be implemented as combined structures or resources. Similarly, structures and functions presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements fall within the scope of embodiments of this disclosure, as presented in the appended claims. Therefore, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims

1. A precursor delivery device, comprising: A frame with multiple openings; A container for storing precursors, the container being installed within an internal volume formed by the frame; as well as A plurality of interchangeable side panels, each of which is detachably fixed to the frame to cover a corresponding opening among the plurality of openings, and at least one of the plurality of interchangeable side panels can be configured based on a precursor type associated with the precursor.

2. The precursor delivery device according to claim 1, further comprising: A controller is configured to generate control signals to control the release of the precursor into a gas nozzle in the processing chamber via an output port associated with the container. The precursor type associated with the precursor is either a hazardous treatment material (HPM) type or a non-HPM type.

3. The forebody conveying device according to claim 2, wherein the plurality of interchangeable side plates include a front side plate, a right side plate, a left side plate, a left rear side plate, a rear side plate, a right rear side plate, and a top side plate.

4. The precursor delivery device of claim 3, wherein the left side plate includes a configurable opening to receive the controller.

5. The precursor delivery device according to claim 4, wherein the precursor is of the HPM type, and the precursor delivery device further comprises: A differential pressure sensor is mounted on the left side plate and is configured to monitor the exhaust flow rate of the precursor delivery device.

6. The precursor conveying device according to claim 3, wherein the precursor is of the HPM type, and the rear side plate comprises: One or more metal fittings have a through opening; Heater AC connector opening; as well as The casing has an exhaust outlet opening.

7. The precursor delivery device according to claim 6, further comprising: A discrete liquid level sensor, configured to sense the liquid level of the precursor in discrete increments; as well as A continuous liquid level sensor is configured to perform continuous sensing of the liquid level of the precursor.

8. The precursor delivery device according to claim 7, further comprising: A discrete liquid level sensing controller, configured to control the operation of the discrete liquid level sensor; as well as A continuous liquid level sensing controller is configured to control the operation of the continuous liquid level sensor.

9. The precursor delivery device according to claim 8, wherein the discrete liquid level sensing controller and the continuous liquid level sensing controller are mounted on the top side plate.

10. The precursor conveying device according to claim 4, wherein the precursor is the non-HPM type, and the rear side plate comprises: Through opening in metal fittings; Heater AC connector opening; as well as Metal fitting partition opening.

11. The precursor delivery device according to claim 10, further comprising: A discrete liquid level sensor, configured to sense the liquid level of the precursor in discrete increments.

12. The precursor delivery device according to claim 11, further comprising: A discrete liquid level sensing controller is configured to control the operation of the discrete liquid level sensor.

13. The precursor delivery device according to claim 12, wherein the discrete liquid level sensing controller is mounted on the top side plate.

14. The precursor delivery device according to any one of claims 2-13, further comprising: A pressure gauge configured to measure at least the pressure of the precursor within the container; as well as A mass flow controller (MFC) is configured to control the flow of the precursor to the gas nozzle.

15. The precursor delivery device according to claim 14, wherein the control signal further controls the pressure gauge and the MFC.

16. The precursor delivery device of claim 15, wherein the controller, the pressure gauge, and the MFC are configured to operate according to an EtherCAT-based protocol.

17. A semiconductor substrate processing apparatus, the apparatus comprising: spray nozzle; Chemical substance delivery system, the chemical substance delivery system comprising: A first precursor delivery device, comprising a first frame, the first precursor delivery device being configured to deliver a first precursor to the nozzle; and A second precursor delivery device includes a second frame, the second precursor delivery device being configured to deliver a second precursor to the nozzle, and the second frame being identical to the first frame; A processing chamber in which a semiconductor substrate is processed, the processing chamber being fluidly coupled to the nozzle; and A controller is configured to generate a control signal that releases at least one of the first precursor and the second precursor into the nozzle during processing of the semiconductor substrate disposed in the processing chamber.

18. The semiconductor substrate processing apparatus of claim 17, wherein the first precursor delivery device comprises: A plurality of interchangeable side panels, each of which is detachably secured to the first frame to cover a corresponding opening in a plurality of openings in the first frame, and at least one of the plurality of interchangeable side panels is configurable based on a precursor type associated with the first precursor.

19. The semiconductor substrate processing apparatus of claim 18, wherein the second precursor delivery device comprises: The second plurality of interchangeable side panels, each of which is detachably fixed to the second frame to cover a corresponding opening in a plurality of openings in the second frame, and at least one of the second plurality of interchangeable side panels is configurable based on a precursor type associated with the second precursor.

20. The semiconductor substrate processing apparatus of claim 19, wherein the precursor type associated with the first precursor is a hazardous processing material (HPM) type, and the precursor type associated with the second precursor is a non-HPM type.

21. The semiconductor substrate processing apparatus of claim 20, wherein the first precursor delivery device includes a differential pressure sensor mounted on at least one of the first plurality of interchangeable side plates, the differential pressure sensor being configured to monitor the exhaust flow rate of the first precursor delivery device.

22. The semiconductor substrate processing apparatus of claim 21, wherein the second precursor delivery device comprises: A discrete liquid level sensor, configured to sense the liquid level of the precursor in discrete increments; as well as A discrete liquid level sensing controller, configured to control the operation of the discrete liquid level sensor. The discrete liquid level sensing controller is mounted on at least one of the second plurality of interchangeable side plates.

23. The semiconductor substrate processing apparatus of claim 21, wherein at least one of the first plurality of interchangeable side plates and at least one of the second plurality of interchangeable side plates.

24. A method for processing a substrate in a processing chamber, the method comprising: A chemical substance delivery system is configured, the chemical substance delivery system including a first precursor delivery device and a second precursor delivery device, the first precursor delivery device including a first frame, the second precursor delivery device including a second frame, the second frame being the same as the first frame; The first precursor delivery device is configured with a hazardous materials (HPM) type precursor; The second precursor delivery device is configured with a non-HPM type precursor. The chemical delivery system is coupled to the nozzle of the processing chamber; as well as One or more control signals are generated to control the delivery of one or both of the HPM type precursor and the non-HPM type precursor to the treatment chamber via the nozzle.

25. The method of claim 24, further comprising: The first plurality of interchangeable side plates are detachably secured to the first frame of the first precursor conveying device to cover corresponding openings among the plurality of openings in the first frame.

26. The method of claim 25, wherein at least one of the first plurality of interchangeable side plates can be configured based on the first precursor delivery device storing the HPM-type precursor.

27. The method of claim 26, further comprising: The exhaust flow rate of the first precursor delivery device is monitored using a differential pressure sensor, which is mounted on at least one of the first plurality of interchangeable side plates.

28. The method of claim 25, further comprising: The second plurality of interchangeable side plates are detachably fixed to the second frame of the second forebody conveying device to cover the corresponding openings in the plurality of openings of the second frame.

29. The method of claim 28, wherein at least one of the second plurality of interchangeable side plates can be configured based on the second precursor delivery device storing the non-HPM type precursor.

30. The method of claim 29, further comprising: The level of the non-HPM precursor is monitored in discrete increments using a discrete level sensor. as well as The monitoring is controlled using a discrete liquid level sensing controller, which is mounted on at least one of the second plurality of interchangeable side panels.

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