Electrostatic chuck separation method and apparatus

Abstract

The invention discloses an electrostatic chuck separation method and equipment. The method comprises the following steps: fixing an electrostatic chuck on a bearing platform; the position of the bonding layer interface is determined through a non-contact distance measuring device, and the cutting depth of a diamond wire is set to avoid damage to a metal base; a diamond wire cutting and multi-point dust collection system is started, the temperature is monitored in real time in the cutting process, and regulation and control are conducted through the temperature-speed relation based on the type of the bonding layer; when cutting is close to the edge by 5-10 mm, the transparent protection supporting columns are lifted; after cutting is completed, the dust collection system is delayed to be closed, the supporting columns are lowered, and stripping is completed. The equipment is integrated with an infrared temperature measurement module, a diamond wire cutting module, a multi-point vortex dust collection system and a liftable protection supporting column. Efficient separation of the electrostatic chuck is achieved, temperature control is accurate, fragments are safely intercepted, and efficient dust removal is achieved.

Description

Electrostatic chuck separation method and equipment Technical Field

[0001] This invention relates to the field of electrostatic chucks, and more specifically, to an electrostatic chuck separation method and apparatus. Background Technology

[0002] Electrostatic chucks (ESCs) are critical components in semiconductor manufacturing used to hold and hold wafers in place, and are widely used in etching, chemical vapor deposition (CVD), and physical vapor deposition (PVD) processes. A typical ESC structure consists of a metal base (usually aluminum alloy) bonded to a ceramic cladding (such as Al2O3 or AlN) by a high-performance adhesive layer. During use, corrosion of the adhesive, damage to the internal chip or heater, and cracks or chips in the ceramic cladding can occur. Therefore, it is necessary to separate the metal base from the ceramic chuck, i.e., peel it off, for subsequent repairs.

[0003] Currently, the challenge in ESC repair lies in how to safely and without damage remove the ceramic disc from the metal base. Traditional methods include: forcibly separating it using metal tools, which can easily cause deformation of the metal base, damage to the threads, or flying ceramic fragments, posing serious safety hazards; and heating the entire ESC to 250-300℃ to soften the adhesive layer, but the high temperature can easily cause thermal expansion and instability of the metal base, and residual adhesive still needs to be cleaned manually, which is inefficient.

[0004] Diamond wire cutting technology has been introduced into ESC repair, but the existing solution has a defect: it does not distinguish the type of adhesive layer material. The ceramic disk of the ESC is usually bonded to the metal base with a high-temperature resistant silicone adhesive layer. This adhesive layer is based on a silicone polymer, typically including polydimethylsiloxane (PDMS) or modified silicone resin (such as epoxy modified silicone resin or phenolic modified silicone resin), and is supplemented with a small amount of filler (such as silica powder), coupling agent or curing agent. This type of adhesive layer is prone to aging and becoming brittle in long-term high-temperature processes and needs to be completely removed during repair. Different adhesive layers (such as polydimethylsiloxane, epoxy-silicone resin, etc.) have vastly different thermo-mechanical properties. Even when using the same adhesive layer, different service lives will lead to different degrees of aging. Using uniform cutting parameters can easily lead to temperature runaway or incomplete cutting. The lack of an intelligent temperature control mechanism means that if the frictional heat generated by high-speed cutting exceeds a certain temperature, it can easily cause thermal damage or stress deformation of the electrostatic chuck, affecting the quality of subsequent processes and the lifespan of the diamond wire. Safety protection is insufficient. After cutting, ceramic discs or debris may be carried away by the high-speed rotating diamond wire, causing equipment damage, environmental pollution, or injury to operators. Residual adhesive cleaning efficiency is low. Resin adhesive residue generated during cutting is difficult to completely remove and requires manual cleaning, which is inefficient and extremely unsafe.

[0005] Therefore, there is an urgent need for an electrostatic chuck separation method and equipment that is material-adaptive, temperature-controlled, safe, reliable, clean, and efficient, in order to meet the stringent requirements of high reliability and high cleanliness for semiconductor equipment maintenance. Summary of the Invention

[0006] This invention addresses the problems existing in the prior art by providing a method for separating electrostatic chucks, comprising the following steps:

[0007] S1, the electrostatic chuck is fixed on the support platform of the electrostatic chuck separation device. The electrostatic chuck includes a metal base and a ceramic disk bonded thereto by an adhesive layer. The adhesive layer includes one or more combinations of polydimethylsiloxane, epoxy-silicone modified resin, and phenolic-silicone modified resin.

[0008] S2, the interface position between the ceramic disk and the metal base is obtained by a non-contact ranging device, and the cutting depth of the diamond wire is set according to the position so that the diamond wire is located in the adhesive layer and does not contact the metal base or the ceramic disk.

[0009] S3, the separation method includes a self-learning step: providing cooling water at a flow rate of 5 L / min to 20 L / min and a temperature of 5 to 20°C, performing three trial cuts at different linear speeds on the electrostatic chuck, monitoring the temperature of the electrostatic chuck in real time using an infrared temperature measurement module, obtaining the temperature-speed relationship of the adhesive layer through curve fitting, and storing the temperature-speed relationship in association with the chuck model.

[0010]

[0011] Where T is the temperature of the ceramic disk, in °C, and its value ranges from 25 to 90 °C; T0 is the ambient temperature, in °C, which is 25 °C; and k is a coefficient related to the properties of the adhesive layer, in °C·s. n / m n v is the linear velocity of the diamond wire, in m / s, and n is the exponent, ranging from 0.95 to 1.15.

[0012] S4, start the diamond wire cutting module and multi-point dust collection module. The linear speed of the diamond wire is lower than the linear speed corresponding to T = 90℃. The carrying platform of the electrostatic chuck moves, so that the diamond wire cuts the adhesive layer. When the diamond wire cuts to a distance of 5 to 10 mm from the edge of the electrostatic chuck, the protective support column is raised.

[0013] S5, after the diamond wire cutting stops, delay for 3 to 10 seconds to shut off the multi-point vacuum system, then the protective support column is lowered, and the cut metal base and ceramic disc are removed;

[0014] Furthermore, when the adhesive layer comprises polydimethylsiloxane, the value of k ranges from 50 to 60, and the value of n ranges from 0.95 to 1.05;

[0015] When the adhesive layer comprises epoxy-silicone modified resin, the value of k ranges from 58 to 68, and the value of n ranges from 1.00 to 1.10.

[0016] When the adhesive layer comprises phenolic-silicone modified resin, the value of k ranges from 65 to 80, and the value of n ranges from 1.05 to 1.15.

[0017] Furthermore, the protective support column is raised and lowered by a cylinder drive. The Vickers hardness of the protective support column is 20 to 150 HV, and the light transmittance in the visible light band is 85 to 90%. The protective support column includes at least one of polycarbonate, modified polycarbonate, or transparent polyimide.

[0018] The preferred protective support structure is made of polycarbonate;

[0019] Furthermore, the number of protective supports is 4 to 8, which are evenly distributed along the circumference of the electrostatic chuck. The radial gap between the protective support and the outer circumference of the electrostatic chuck is 10 to 20 mm, and the central angle between adjacent protective supports is 45° to 90°.

[0020] Furthermore, the multi-point vacuuming system includes 3 to 9 vortex vacuum cleaners symmetrically distributed around the diamond wire conveyor wheel, with a single-point suction power of 800 to 1500 Pa, and each suction port is equipped with an independent HEPA filter with a filtration accuracy of 0.3 to 1 μm;

[0021] Furthermore, the axis of the suction port of the vortex vacuum cleaner forms an angle of 15° to 45° with the normal of the surface of the electrostatic chuck, and is tilted towards the diamond wire outlet side;

[0022] Furthermore, the non-contact ranging device is a laser displacement sensor or an eddy current sensor, with a measurement accuracy of not less than ±0.02 mm, and the cutting depth is 1 mm to 6 mm.

[0023] Furthermore, the cooling water is injected from the inlet of the cooling water channel of the electrostatic chuck and flows out from the outlet of the cooling water channel of the electrostatic chuck.

[0024] Furthermore, in step (1), the corresponding cutting parameter library is retrieved according to the model of the electrostatic chuck. The parameter library contains the cutting depth, linear speed, k value and n value corresponding to different ESCs.

[0025] A second aspect of the present invention provides an electrostatic chuck separation device, comprising the infrared temperature measurement module, diamond wire cutting module, multi-point dust collection module, and protective support column as described in claim 1.

[0026] Beneficial effects:

[0027] 1. For unknown ESC models, the system automatically performs three trial cuts, records line speed and temperature data, establishes a temperature-speed function for the adhesive layer, and calibrates the ranges of k and n parameters for the mainstream adhesive layers of polydimethylsiloxane, epoxy-silicone modified resin, and phenolic-silicone modified resin, respectively, and stores them in the database. This allows for efficient and smooth separation of the ceramic disk and metal base in the same type of electrostatic chuck without damaging the metal base and ceramic disk, reducing scratches and extending the life of the metal base and ceramic disk.

[0028] 2. The infrared temperature measurement module, diamond wire cutting module, multi-point dust collection module, and protective support pillars work together: The temperature-speed function is derived based on the data from the infrared temperature measurement module and the diamond wire cutting module; a vortex vacuum cleaner is configured with strong suction, and the suction port is tilted at a specific angle towards the diamond wire exit side. After cutting, the suction is delayed to ensure no residual adhesive remains, achieving non-destructive separation of the electrostatic chuck at high speeds; protective support pillars with a certain hardness and light transmittance are used, and the pillars are evenly distributed, maintaining a certain distance from the outer circumference of the ESC. They rise at the end of the cutting process without affecting the diamond wire cutting, balancing protection and visibility. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 is a schematic cross-sectional view of the electrostatic chuck;

[0031] Figure 2 is a three-dimensional schematic diagram of the electrostatic chuck separation process;

[0032] Figure 3 is a top view of the electrostatic chuck separation process;

[0033] Figure 4 is a schematic diagram of the cooling water channel inside the electrostatic chuck;

[0034] 1-Electrostatic chuck, 11-Ceramic disc, 12-Adhesive layer, 13-Metal base, 2-Infrared temperature measurement module, 3-Diamond wire, 4-Protective support column, 5-Bearing platform, 6-Vortex vacuum cleaner, 7-Diamond wire conveyor wheel.

[0035] In Figure 3, the arrows represent the direction of movement of the electrostatic chuck, and the straight line indicates that the protective support automatically rises when the diamond wire is cut; in Figure 4, the arrows represent the direction of flow of cooling water. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0037] In this invention, the "penetration depth" refers to the vertical distance between the diamond wire 3 and the ceramic disc 11.

[0038] In semiconductor manufacturing processes, bonding technology is widely used, such as in chip packaging, wafer stacking, and the connection of various functional components of the electrostatic chuck 1. Bonding is the process of connecting at least two components together with an adhesive. In semiconductor processing equipment, electrostatic chucks are configured in process equipment such as PVD, CVD, and Etch, including ceramic disk 11 and metal base 13, which are bonded together by an adhesive layer.

[0039] During prolonged use, the adsorption force of the electrostatic chuck 1 will decrease, requiring repair or replacement. First, the ceramic disc 11 needs to be separated from the metal base 13 before further processing.

[0040] The electrostatic chuck separation method of the present invention includes the following steps:

[0041] S1, the electrostatic chuck 1 is fixed on the support platform of the electrostatic chuck separation device. The electrostatic chuck 1 includes a metal base 13 and a ceramic disk 11 bonded thereto by an adhesive layer 12. The adhesive layer 12 includes one or more combinations of polydimethylsiloxane, epoxy-silicone modified resin, and phenolic-silicone modified resin.

[0042] S2, the interface position between the ceramic disk 11 and the metal base 13 is obtained by a non-contact ranging device, and the cutting depth of the diamond wire 3 is set according to the position, so that the diamond wire 3 is located in the adhesive layer 12 and does not contact the metal base 13 or the ceramic disk 11.

[0043] The non-contact ranging device uses a laser displacement sensor or an eddy current sensor, with a measurement accuracy of no less than ±0.02 mm and a cutting depth of 1 mm to 6 mm. Controlling the measurement accuracy and cutting depth within this range ensures that the diamond wire will not damage the metal base or ceramic disc during the cutting process.

[0044] S3, the separation method includes a self-learning step: providing cooling water at a flow rate of 5 L / min to 20 L / min and a temperature of 5 to 20°C, performing three trial cuts at different linear speeds on the electrostatic chuck 1, monitoring the temperature of the electrostatic chuck in real time through the infrared temperature measurement module 2, obtaining the temperature-speed relationship of the adhesive layer 12 through curve fitting, and storing the temperature-speed relationship in association with the chuck model.

[0045]

[0046] Where T is the temperature of ceramic disk 11, in °C, and the value of T ranges from 25 to 90 °C; T0 is the ambient temperature, in °C, which is 25 °C; and k is a coefficient related to the properties of adhesive layer 12, in °C·s. n / m n v is the linear velocity of diamond wire 3 in m / s, and n is the exponent, ranging from 0.95 to 1.15.

[0047] Step (3) includes a self-learning function. When processing an ESC of unknown model or one that cannot be matched in the existing database for the first time, i.e., an electrostatic chuck 1 with an unknown adhesive layer composition, the control system performs three trial cuts at a safe linear speed (e.g., 0.6-1.1 m / s) (a short-range circumferential cut of 1 / 4 of the circumference), and collects the average temperature of the last 5 seconds at each linear speed as T. Based on the power function model mentioned above, the material-specific k and n parameters are fitted by a nonlinear regression algorithm. The k and n parameters are bound to the ESC model and stored in the local database for intelligent temperature control of subsequent chucks of the same type. When separating ceramic discs of the same ESC in the future, in S1, the corresponding cutting parameter library can be retrieved according to the model of the electrostatic chuck 1. The parameter library contains the cutting depth, linear speed, k value, and n value corresponding to different sizes of ESCs, thereby efficiently and smoothly completing the separation of the ceramic disc and the metal base in the electrostatic chuck without damaging the metal base and the ceramic disc.

[0048] When the adhesive layer 12 comprises polydimethylsiloxane, the value of k ranges from 50 to 60, and the value of n ranges from 0.95 to 1.05; when the adhesive layer 12 comprises epoxy-silicone modified resin, the value of k ranges from 58 to 68, and the value of n ranges from 1.00 to 1.10; when the adhesive layer 12 comprises phenolic-silicone modified resin, the value of k ranges from 65 to 80, and the value of n ranges from 1.05 to 1.15.

[0049] The flow rate of the cooling water is 5 L / min to 20 L / min, and the temperature is 5 to 20℃. The diamond wire 3 releases heat during the cutting process, which can easily damage the electrostatic chuck 1. Therefore, as shown in Figure 4, cooling water is introduced into the internal channel of the electrostatic chuck. The cooling water is injected from the inlet of the cooling water channel of the electrostatic chuck 1 and flows out from the outlet of the cooling water channel of the electrostatic chuck 1, which can achieve thermal balance and thus maintain the stability of the temperature of the ceramic disc 11.

[0050] S4, start the diamond wire cutting module and multi-point dust collection module. The linear speed of the diamond wire is lower than the linear speed corresponding to T = 90℃. The carrier platform 5 carrying the electrostatic chuck moves, so that the diamond wire 3 cuts the adhesive layer 12. When the diamond wire 3 cuts to a distance of 5 to 10 mm from the edge of the electrostatic chuck 1, the protective support column 4 is raised.

[0051] The multi-point suction system comprises 3 to 9 vortex vacuum cleaners 6, symmetrically distributed around the diamond wire conveyor wheel 7, with a single-point suction power of 800 to 1500 Pa. Each suction port is equipped with an independent HEPA filter with a filtration accuracy of 0.3 to 1 μm. The axis of the suction port of the vortex vacuum cleaner 6 forms an angle of 15° to 45° with the normal to the surface of the electrostatic chuck 1, tilted towards the diamond wire exit side. After cutting, a delayed closing process ensures no residual adhesive remains, achieving non-destructive separation from the electrostatic chuck.

[0052] The protective support column 4 is raised and lowered by a cylinder. The Vickers hardness of the protective support column 4 is 20 to 150 HV, and the light transmittance in the visible light band is 85 to 90%, which takes into account both protection and visibility. The protective support column 4 includes at least one of polycarbonate, modified polycarbonate or transparent polyimide, with polycarbonate being the preferred protective support column 4.

[0053] The number of protective supports 4 is 4 to 8, which are evenly distributed around the circumference of the electrostatic chuck 1. The radial gap between the protective supports 4 and the outer circumference of the electrostatic chuck 1 is 10 to 20 mm, and the central angle between adjacent supports 4 is 45° to 90°.

[0054] S5, after the diamond wire 3 stops cutting, delay for 3 to 10 seconds to shut off the multi-point vacuum system, then the protective support 4 is lowered, and the cut metal base 13 and ceramic disc 11 are taken out.

[0055] The present invention also discloses an electrostatic chuck separation device, including the infrared temperature measurement module 2, the diamond wire cutting module, the multi-point dust collection module and the protective support column 4 mentioned above.

[0056] The above and other advantages of the present invention can be better understood through the following embodiments, but the following embodiments are not intended to limit the scope of the present invention.

[0057] Example

[0058] The following embodiments illustrate the present invention, but the present invention is not limited to the following embodiments.

[0059] Measurement of Vickers hardness of protective posts The fully automated micro Vickers hardness tester (Mitutoyo HM-220) was used. According to ASTM E384 standard, the sample was precision polished to a surface roughness Ra ≤ 0.1 μm. A load of 100 gf (PC type) or 200–300 gf (CPI type) was applied at room temperature and held for 15 seconds. The indentation was automatically identified and the HV value was calculated by a high-resolution CCD. At least 5 points were measured for each sample and the average was taken.

[0060] Measurement of the transmittance of protective pillars in the visible light band Using a UV-Vis-NIR spectrophotometer (Shimadzu UV-3600 Plus), optical grade samples with a thickness controlled at 1.0 ± 0.05 mm were placed in the integrating sphere attachment according to ASTM D1003 standard. The wavelength range of 380-780 nm was scanned, and the total transmittance at 550 nm was recorded with air as a reference. Each sample was tested three times and the average value was taken.

[0061] Scratch test on ceramic disc and metal base: The separated ceramic disk and metal base were cleaned with anhydrous ethanol in an ultrasonic cleaner for 10 minutes, then dried with high-purity nitrogen. Using a 3D optical surface profilometer (equipped with Vision64 analysis software, Bruker, ContourGT-K), nine test areas were selected concentrically on the bonding surface of the ceramic disk and metal base (one center point, four points at a radius of 50 mm, and four points at a radius of 100 mm). Each area was scanned with a scanning area of ​​1 mm × 1 mm, using white light interferometry (VSI) mode, with a vertical resolution ≤0.1 nm and a lateral sampling interval of 0.5 μm. The software automatically identified and calculated the maximum scratch depth (MSD) and arithmetic mean roughness Ra of each area, and the average value of the nine points was taken as the scratch index of the sample. The number of test samples in each group was n=5.

[0062] Example 1

[0063] (1) An electrostatic chuck with an adhesive layer including polydimethylsiloxane and an adhesive layer thickness of 7 mm is fixed on the carrier platform of the electrostatic chuck separation device. The electrostatic chuck includes a metal base and a ceramic disk bonded thereto by the adhesive layer.

[0064] (2) The interface position between the ceramic disk and the metal base is obtained by laser displacement sensor, and the cutting depth of the diamond wire is set to 1 mm according to the position, so that the diamond wire is located in the adhesive layer and does not contact the metal base or the ceramic disk.

[0065] (3) Self-learning step: Provide cooling water with a flow rate of 20 L / min and a temperature of 20℃, and perform three trial cuts at different linear speeds on the electrostatic chuck. Collect the average temperature of the last 5 seconds at each linear speed as T using an infrared temperature measurement module. The values ​​are (a) v = 0.80 m / s, T = 72.0 ℃, (b) v = 0.90 m / s, T = 77.0 ℃, and (c) v = 1.00 m / s, T = 83.0 ℃. Obtain the temperature-speed relationship when the adhesive layer includes polydimethylsiloxane by curve fitting, and store the parameters associated with the chuck model.

[0066]

[0067] Where T is the temperature of the ceramic disk in °C, and v is the linear velocity of the diamond wire in m / s;

[0068] (4) According to the above formula, when T = 90℃, the corresponding critical linear velocity is 1.13 m / s. Therefore, the linear velocity of the diamond wire is always kept below 1.13 m / s. The diamond wire cutting module and the multi-point dust collection module are started, and the linear velocity of the diamond wire is set to 1.05 m / s. The carrying platform of the electrostatic chuck moves, so that the diamond wire cuts the bonding layer. When the diamond wire is cut to 10 mm from the edge of the electrostatic chuck, the protective support pillar is raised by a cylinder. The protective support pillar is made of polycarbonate with a Vickers hardness of 20 HV and a light transmittance of 88%. There are 6 pillars in total, and the central angle between adjacent pillars is 60°. The radial gap between the protective support pillar and the outer circumference of the electrostatic chuck is 10 mm. The multi-point vacuuming system is equipped with 6 vortex vacuum cleaners, which are symmetrically distributed around the three diamond wire conveying wheels. The single-point suction power is 1000 Pa, and each suction port is equipped with an independent HEPA filter with a filtration accuracy of 1 μm. The axis of the suction port of the vortex vacuum cleaner is at a 30° angle to the normal of the surface of the electrostatic chuck, tilted towards the diamond wire exit side.

[0069] (5) After the diamond wire cutting stops, the multi-point dust collection system is turned off after a 3-second delay. Then the protective support is lowered and the cut metal base and ceramic disc are removed.

[0070] Example 2

[0071] The adhesive layer in step (1) includes an epoxy-silicone modified resin;

[0072] The cutting depth of the diamond wire in step (2) is 3 mm;

[0073] In step (3), cooling water with a flow rate of 5 L / min and a temperature of 5℃ was provided. The data obtained from three trial cuts were: (a) v = 0.75 m / s, T = 72.0 ℃, (b) v = 0.90 m / s, T = 83.5 ℃, (c) v = 1.00 m / s, T = 90.2 ℃. The fitted result was: The definitions of T and v are as described above;

[0074] In step (4), the critical linear velocity is calculated to be 1.00 m / s according to the formula. Therefore, the linear velocity of the diamond wire is always controlled to be lower than 1.00 m / s. The linear velocity of the diamond wire is set to 0.95 m / s. When the diamond wire is cut to 10 mm away from the edge of the electrostatic chuck, the protective support is lifted by the cylinder. The protective support is made of modified polycarbonate with a Vickers hardness of 40 HV and a light transmittance of 90%. There are 4 of them. The central angle between adjacent supports is 90°. The radial gap between the protective support and the outer circumference of the electrostatic chuck is 20 mm. The multi-point dust collection system is equipped with 9 vortex vacuum cleaners, which are symmetrically distributed around the three diamond wire conveying wheels. The single-point suction power is 800 Pa. Each dust collection port is equipped with an independent HEPA filter with a filtration accuracy of 0.5 μm. The axis of the dust collection port of the vortex vacuum cleaner is at an angle of 45° with the normal of the surface of the electrostatic chuck and tilted towards the diamond wire outlet side.

[0075] In step (5), the multi-point vacuum system is turned off 10 seconds after the diamond wire cutting stops;

[0076] The rest is the same as in Example 1.

[0077] Example 3

[0078] The adhesive layer in step (1) includes a phenolic-silicone modified resin;

[0079] The diamond wire cutting depth in step (2) is 6 mm;

[0080] In step (3), cooling water with a flow rate of 10 L / min and a temperature of 10℃ was provided. The data obtained from three trial cuts were: (a) v = 0.60 m / s, T = 68.0 ℃, (b) v = 0.75 m / s, T = 80.5 ℃, and (c) v = 0.85 m / s, T = 89.0 ℃. The fitted result was: The definitions of T and v are as described above;

[0081] In step (4), the critical linear velocity calculated according to the formula is 0.86 m / s. Therefore, the linear velocity of the diamond wire is always controlled to be lower than 0.86 m / s. The linear velocity of the diamond wire is set to 0.80 m / s. When the diamond wire is cut to 5 mm away from the edge of the electrostatic chuck, the protective support is lifted by the cylinder. The protective support is made of transparent polyimide with a Vickers hardness of 150 HV and a light transmittance of 85%. There are 8 of them. The central angle between adjacent supports is 45°. The radial gap between the protective support and the outer circumference of the electrostatic chuck is 20 mm. The multi-point dust collection system is equipped with 3 vortex vacuum cleaners, which are symmetrically distributed around the three diamond wire conveying wheels. The single-point suction power is 1500 Pa. Each dust collection port is equipped with an independent HEPA filter with a filtration accuracy of 0.3 μm. The axis of the dust collection port of the vortex vacuum cleaner is at an angle of 15° with the normal of the surface of the electrostatic chuck and tilted towards the diamond wire outlet side.

[0082] In step (5), the multi-point vacuum system is turned off 10 seconds after the diamond wire cutting stops;

[0083] The rest is the same as in Example 1.

[0084] Comparative Example 1

[0085] (1) An electrostatic chuck with an adhesive layer including polydimethylsiloxane and an adhesive layer thickness of 7 mm is fixed to the carrier platform of the electrostatic chuck Debonding device. The electrostatic chuck includes a metal base and a ceramic disk bonded thereto by the adhesive layer.

[0086] (2) The interface position between the ceramic disk and the metal base is obtained by laser displacement sensor, and the cutting depth of the diamond wire is set to 1 mm according to the position, so that the diamond wire is located in the adhesive layer and does not contact the metal base or the ceramic disk.

[0087] (3) Start the diamond wire cutting module and set the linear speed of the diamond wire to 0.05 m / s. Move the carrying platform of the electrostatic chuck so that the diamond wire cuts the bonding layer. When the diamond wire cuts to 10 mm away from the edge of the electrostatic chuck, manually press the ceramic disc to prevent it from flying out.

[0088] (4) Remove residual glue manually using a sharp object such as a toothpick.

[0089] Scratch tests were performed on both the examples and the comparative examples, and the test results are shown in the table below:

[0090]

[0091] Compared to traditional electrostatic chuck separation equipment and methods, the method and equipment in this embodiment of the invention establish a temperature-velocity function for the adhesive layer of an unknown type of electrostatic chuck. This allows for efficient and smooth separation of the ceramic disc from the metal base during subsequent processing of the same type of electrostatic chuck, without damaging either the metal base or the ceramic disc, thus reducing scratch depth and roughness. Furthermore, the inclusion of an infrared temperature measurement module, a diamond wire cutting module, a multi-point dust collection module, and a protective support column ensures no residual adhesive, preventing the ceramic disc from flying out. This eliminates the need for manual adhesive removal and manual pressing of the ceramic disc, improving processing efficiency and safety.

[0092] It should be noted that, based on the explanations and descriptions in the foregoing specification, those skilled in the art can make changes and modifications to the above embodiments. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some equivalent modifications and alterations to the present invention should also be within the scope of protection of the claims of the present invention. Furthermore, although some specific terms are used in this specification, these terms are only for convenience of explanation and do not constitute any limitation on the invention.

Claims

1. A method for separating electrostatic chucks, characterized in that, Includes the following steps: S1, the electrostatic chuck (1) is fixed on the carrier platform of the electrostatic chuck separation device. The electrostatic chuck (1) includes a metal base (13) and a ceramic disk (11) bonded thereto by an adhesive layer (12). The adhesive layer (12) includes one or more combinations of polydimethylsiloxane, epoxy-silicone modified resin, and phenolic-silicone modified resin. S2, the interface position between the ceramic disk (11) and the metal base (13) is obtained by a non-contact ranging device, and the cutting depth of the diamond wire (3) is set according to the position so that the diamond wire (3) is located within the adhesive layer (12) and does not contact the metal base (13) or the ceramic disk (11). S3, the separation method includes a self-learning step: providing a flow rate of 5 L / min to 20 The electrostatic chuck (1) was subjected to three trial cuts at different linear speeds using cooling water at a speed of L / min and a temperature of 5 to 20°C. The temperature of the electrostatic chuck was monitored in real time by an infrared temperature measurement module (2). The temperature-speed relationship of the adhesive layer (12) was obtained by curve fitting, and the temperature-speed relationship was associated with the chuck model and stored. Where T is the temperature of the ceramic disk (11), in °C, and the value of T ranges from 25 to 90 °C; T0 is the ambient temperature, which is 25 °C; and k is a coefficient related to the properties of the adhesive layer (12), in °C·s. n / m n v is the linear velocity of the diamond wire (3), in m / s, and n is the exponent, ranging from 0.95 to 1.15; S4, start the diamond wire cutting module and the multi-point dust collection module. The linear velocity of the diamond wire is lower than the linear velocity corresponding to T = 90℃. The carrying platform (5) of the electrostatic chuck moves, so that the diamond wire (3) cuts the adhesive layer (12). When the diamond wire (3) cuts to a distance of 5 to 10 mm from the edge of the electrostatic chuck (1), the protective support column (4) is raised; S5, after the diamond wire (3) stops cutting, the multi-point dust collection system is turned off after a delay of 3 to 10 seconds. Then the protective support column (4) is lowered, and the cut metal base (13) and ceramic disc (11) are taken out.

2. The electrostatic chuck separation method as described in claim 1, characterized in that, When the adhesive layer (12) comprises polydimethylsiloxane, the value of k ranges from 50 to 60, and the value of n ranges from 0.95 to 1.05; when the adhesive layer (12) comprises epoxy-silicone modified resin, the value of k ranges from 58 to 68, and the value of n ranges from 1.00 to 1.10; when the adhesive layer (12) comprises phenolic-silicone modified resin, the value of k ranges from 65 to 80, and the value of n ranges from 1.05 to 1.

15.

3. The electrostatic chuck separation method as described in claim 1, characterized in that, The protective support column (4) is lifted and lowered by a cylinder. The Vickers hardness of the protective support column (4) is 20 to 150 HV, and the transmittance in the visible light band is 85 to 90%. The protective support column (4) includes at least one of polycarbonate, modified polycarbonate or transparent polyimide. The preferred protective support column (4) is polycarbonate.

4. The electrostatic chuck separation method as described in claim 1, characterized in that, The number of protective supports (4) is 4 to 8, and they are evenly distributed around the circumference of the electrostatic chuck (1). The radial gap between the protective supports (4) and the outer circumference of the electrostatic chuck (1) is 10 to 20 mm, and the central angle between adjacent protective supports (4) is 45° to 90°.

5. The electrostatic chuck separation method as described in claim 1, characterized in that, The multi-point vacuum system includes 3 to 9 vortex vacuum cleaners (6) symmetrically distributed around the diamond wire conveyor wheel (7), with a single-point suction power of 800 to 1500 Pa, and each vacuum port is equipped with an independent HEPA filter with a filtration accuracy of 0.3 to 1 μm.

6. The electrostatic chuck separation method as described in claim 5, characterized in that, The suction port axis of the vortex vacuum cleaner (6) has an angle of 15° to 45° with the normal of the surface of the electrostatic chuck (1), and is tilted toward the diamond wire outlet side.

7. The electrostatic chuck separation method as described in claim 1, characterized in that, The non-contact ranging device is a laser displacement sensor or an eddy current sensor, with a measurement accuracy of not less than ±0.02 mm, and the cutting depth is 1 mm to 6 mm.

8. The electrostatic chuck separation method as described in claim 1, characterized in that, The cooling water is injected from the inlet of the cooling water channel of the electrostatic chuck (1) and flows out from the outlet of the cooling water channel of the electrostatic chuck (1).

9. The electrostatic chuck separation method as described in claim 1, characterized in that, In S1, the corresponding cutting parameter library is retrieved according to the model of the electrostatic chuck (1). The parameter library contains the cutting depth, linear speed, k value and n value corresponding to different ESCs.

10. An electrostatic chuck separation device, characterized in that, It includes the infrared temperature measurement module (2), diamond wire cutting module, multi-point dust collection module and protective support column (4) as described in claim 1.

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