Bismaleimide-based dielectric composition for embedded capacitor and preparation method of bismaleimide-based dielectric composition

Abstract

The invention belongs to the technical field of bismaleimide-based dielectric compositions and insulating adhesive films, and particularly relates to a bismaleimide-based dielectric composition for an embedded capacitor and a preparation method of the bismaleimide-based dielectric composition for the embedded capacitor, and the bismaleimide-based dielectric composition comprises total resin, a latent curing accelerator, an optional high-dielectric-constant nanofiller and an optional silane coupling agent; the general resin is composed of bismaleimide resin and liquid crystal epoxy resin, or composed of bismaleimide resin, liquid crystal epoxy resin and cyanate ester resin, or composed of bismaleimide resin, liquid crystal epoxy resin and a film-forming agent.

Description

Bismaleimide-based dielectric composition for embedded capacitors and its preparation method Technical Field

[0001] This invention belongs to the technical field of bismaleimide-based dielectric compositions and insulating films, and particularly relates to bismaleimide-based dielectric compositions for embedded capacitors and their preparation methods. Background Technology

[0002] The electronics and information industry is rapidly developing towards high density, miniaturization, and high reliability. Embedded capacitor technology, due to its ability to effectively reduce package size, lower signal interference, and improve system integration, has become one of the key technologies in high-end electronic devices. As the core material of embedded capacitors, the dielectric composition directly determines the capacitor's operational stability and lifespan. Therefore, it needs to possess comprehensive properties such as high heat resistance, high breakdown strength, low dielectric loss, suitable dielectric constant, and good processability. Bismaleimide-based materials have become a research hotspot in this field due to their excellent heat resistance and insulation properties.

[0003] However, traditional bismaleimide resins have problems such as high curing temperature and high brittleness. A single resin system is difficult to meet the stringent requirements of embedded capacitors for comprehensive material performance. Existing composite dielectric materials often face performance balance problems in component matching. For example, adding high dielectric fillers can easily lead to uneven dispersion and poor compatibility with the resin matrix, resulting in a decrease in material breakdown strength. On the other hand, introducing other resins for modification may sacrifice heat resistance or dielectric stability. These problems limit their large-scale application in high-end embedded capacitors. Summary of the Invention

[0004] The purpose of this invention is to address the aforementioned technical problems by providing a bismaleimide-based dielectric composition for embedded capacitors and a method for preparing the same.

[0005] In view of this, the present invention provides a bismaleimide-based dielectric composition for embedded capacitors, comprising a total resin, a latent curing accelerator, an optional high dielectric constant nanofiller, and an optional silane coupling agent; wherein the total resin is composed of a bismaleimide resin and a liquid crystal epoxy resin, or a bismaleimide resin, a liquid crystal epoxy resin, and a cyanate ester resin, or a bismaleimide resin, a liquid crystal epoxy resin, and a film-forming agent.

[0006] Preferably, the bismaleimide resin accounts for 30wt%-95wt% of the total resin composition; the liquid crystal epoxy resin accounts for 5wt%-30wt% of the total resin composition; if it contains cyanate ester resin, it accounts for 0wt%-50wt% of the total resin composition; if it contains film-forming agent, it accounts for 0wt%-30wt% of the total resin composition; the latent curing accelerator accounts for 0.05wt%-2wt% of the total resin composition; if it contains high dielectric constant nanofiller, it accounts for 10wt%-70wt% of the total mass of the composition; if it contains silane coupling agent, it accounts for 0.05wt%-2.0wt% of the total content of high dielectric constant nanofiller.

[0007] Preferably, the bismaleimide resin is a symmetrical bifunctional compound containing two maleimide rings, including but not limited to 2,2-bis[4-(4-maleimide-phenoxy)phenyl]propane, 4,4'-bismaleimide-diphenylmethane, and bis(3-ethyl-5-methyl-4-maleimide-phenyl)methane.

[0008] Preferably, the general molecular structure formula of the liquid crystal epoxy resin is: Where -R2- includes, but is not limited to: , , , , , , , , , ;in Y in , , , .

[0009] Preferably, the cyanate resin is a compound containing cyanate functional groups, including but not limited to bisphenol A cyanate, bisphenol E cyanate, bisphenol M cyanate, and tetramethylbisphenol F cyanate.

[0010] Preferably, the film-forming agent includes, but is not limited to, bisphenol A phenoxy resin, bisphenol F phenoxy resin, and polyvinyl butyral.

[0011] Preferably, the latent curing accelerator includes, but is not limited to, 1-cyanoethyl-2-ethyl-4-methylimidazole, microencapsulated 2-ethyl-4-methylimidazole, and microencapsulated dibutyltin dilaurate.

[0012] Preferably, the high dielectric constant nanofiller includes barium titanate, strontium titanate, and barium strontium titanate; the silane coupling agent includes epoxy silane coupling agents and amino silane coupling agents, including but not limited to 3-glycidyl etheroxypropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, and 3-aminopropyltriethoxysilane.

[0013] A method for preparing a bismaleimide-based dielectric composition for embedded capacitors includes the following steps: Step 1: Dissolving the raw materials in an organic solvent according to the specified ratio and stirring until a uniform slurry is formed; the raw materials include a total resin and a latent curing accelerator, wherein the total resin is composed of bismaleimide resin and liquid crystal epoxy resin, or composed of bismaleimide resin, liquid crystal epoxy resin and cyanate ester resin, or composed of bismaleimide resin, liquid crystal epoxy resin and film-forming agent, or composed of bismaleimide resin, liquid crystal epoxy resin, high dielectric constant nanofiller and silane coupling agent; Step 2: Coating the slurry onto a substrate and baking at 60-90℃ for 10 hours to evaporate the solvent, obtaining an uncrosslinked insulating film; Step 3: Placing the substrate carrying the uncrosslinked insulating film in a vacuum oven and performing a multi-stage temperature crosslinking reaction at 150℃~250℃; Step 4: After peeling or stripping the film, drying the film at high temperature to obtain a bismaleimide-based insulating film.

[0014] Preferably, when the raw materials are bismaleimide resin, liquid crystal epoxy resin and latent curing accelerator, the solid content of the slurry in step one is 0.1wt%-20wt%, and the stirring conditions are magnetic stirring at 60℃ for 10 hours; the substrate in step two is a glass substrate, a silicon substrate, a PTFE substrate, a high-temperature polymer carrier film or other substrate; the multi-stage temperature crosslinking reaction in step three is 160℃×2h+180℃×2h+200℃×4h+220℃×4h; the film removal method in step four is to immerse the carrier substrate in deionized water to remove the film, and the high-temperature drying conditions are vacuum drying at 200℃ for 10 hours.

[0015] The beneficial effects of this invention are as follows: through the scientific formulation and synergistic effect of components such as bismaleimide resin, liquid crystal epoxy resin, cyanate ester resin, and film-forming agent, the pain points of traditional bismaleimide-based materials, such as high curing temperature, high brittleness, and limited performance, are effectively solved. The introduction of liquid crystal epoxy resin reduces the curing temperature of the semi-cured film to a minimum of 180℃, while improving the material's toughness and dielectric constant; the addition of cyanate ester resin further optimizes high-temperature resistance and low dielectric loss, while the film-forming agent can increase the elongation at break to 6.6%; the combination of high-dielectric nanofiller and silane coupling agent allows the dielectric constant at 1kHz at room temperature to reach a maximum of 7.03, and the DC breakdown field strength at 200℃ to reach a maximum of 615MV / m, achieving a balanced improvement in heat resistance, insulation, dielectric properties, and mechanical toughness.

[0016] The preparation method of this invention features a customized process route designed for different component combinations. The solution casting method combined with multi-stage temperature crosslinking reactions, along with ball milling, ensures uniform dispersion of the nanofiller. The process is simple, controllable, and suitable for large-scale production. The prepared insulating film maintains excellent performance even at high temperatures, achieving a maximum discharge energy density of 6.19 J / cm³ at 200℃ and a maximum charge-discharge efficiency of 90%. This fully meets the stringent requirements of embedded capacitors for materials under complex operating conditions, significantly expanding the application scenarios of bismaleimide-based dielectric materials in high-density, miniaturized high-end electronic devices. Attached Figure Description

[0017] Figure 1 shows the heat flow rate of the bismaleimide-based semi-cured insulating films obtained in Examples 1, 2, 3, 4, 5 and Comparative Example 1 of the present invention as a function of temperature.

[0018] Figure 2 shows the Weibull breakdown strength distribution of the bismaleimide-based dielectric insulating films obtained in Examples 1, 2, 3, 4, 5 and Comparative Example 1 of the present invention.

[0019] Figure 3 shows the dielectric constant and dielectric loss of the bismaleimide-based dielectric insulating films obtained in Examples 1, 2, 3, 4, 5 and Comparative Example 1 of the present invention as a function of frequency.

[0020] Figure 4 shows the changes in energy storage density and charge / discharge efficiency of the bismaleimide-based dielectric insulating films obtained in Examples 1, 2, 3, 4, 5 and Comparative Example 1 as a function of electric field.

[0021] Figure 5 shows the change in heat flow rate of the bismaleimide-based semi-cured insulating film obtained in Examples 1, 6, and 7 of this invention as a function of temperature.

[0022] Figure 6 shows the changes in energy storage density and charge / discharge efficiency of the bismaleimide-based dielectric insulating films obtained in Examples 1, 6, and 7 of this invention as a function of electric field.

[0023] Figure 7 shows the changes in energy storage density and charge / discharge efficiency of the bismaleimide-based dielectric insulating films obtained in Examples 1, 8, and 9 of this invention as a function of electric field.

[0024] Figure 8 shows the tensile stress versus strain of the bismaleimide-based dielectric insulating films obtained in Examples 1, 8, and 9 of this invention.

[0025] Figure 9 shows the dielectric constant and dielectric loss of the bismaleimide-based composite dielectric insulating film obtained in Examples 1, 10, and 11 of this invention as a function of frequency. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0027] The objective of this invention is achieved through the following technical solution: In a first aspect, this invention proposes a composition of a bismaleimide-based dielectric composition or insulating film for embedded capacitors. This composition contains the following components: a bismaleimide resin, which imparts excellent dielectric properties to the cross-linked insulating film, including high heat resistance, high breakdown strength, and low dielectric loss. The bismaleimide resin is characterized as a symmetrical bifunctional compound containing two maleimide rings, including but not limited to 2,2-bis[4-(4-maleimide-phenoxy)phenyl]propane, 4,4'-bismaleimide-diphenylmethane, and bis(3-ethyl-5-methyl-4-maleimide-phenyl)methane. The general molecular formula of the bismaleimide resin is as follows: Among them, -R1- includes, but is not limited to: , , , , , ... , , , Liquid crystal epoxy resin imparts excellent adhesion and a low curing temperature to semi-cured insulating films, and also imparts toughness, high dielectric constant, and heat resistance to the cross-linked insulating films. The general molecular formula of the liquid crystal epoxy resin involved in this invention is as follows: Among them, -R2- includes, but is not limited to: , , , , , , , , , (where Y includes) , , , Cyanate ester resins impart excellent dielectric properties to cross-linked insulating films, including high heat resistance, high breakdown strength, and low dielectric loss. Cyanate ester resins are characterized by compounds containing cyanate ester functional groups, including but not limited to bisphenol A cyanate ester, bisphenol E cyanate ester, bisphenol M cyanate ester, and tetramethylbisphenol F cyanate ester. The general molecular formula of cyanate ester resins is as follows: Among them, -R3- includes, but is not limited to: , , , , Film-forming agents impart toughness to cross-linked insulating films. The film-forming agents involved in this invention include, but are not limited to, bisphenol A phenoxy resin, bisphenol F phenoxy resin, and polyvinyl butyral.

[0028] (1); (1) is a bisphenol A type phenoxy resin; (2); (2) is a bisphenol F type phenoxy resin; (3); (3) is polyvinyl butyral; a latent curing accelerator used to promote the semi-cured insulating film to trigger a curing crosslinking reaction under heating, and to ensure the chemical stability of the semi-cured insulating film during production, storage and transportation. The latent curing accelerators involved in this invention include, but are not limited to: 1-cyanoethyl-2-ethyl-4-methylimidazole (2E4MZ-CN), microencapsulated 2-ethyl-4-methylimidazole (2E4MZ), microencapsulated dibutyltin dilaurate (DBTDL), etc.

[0029]

[0030] High dielectric constant nanofillers are used to improve the dielectric constant of cross-linked insulating films. These include barium titanate (BaTiO3), strontium titanate (SrTiO3), and barium strontium titanate (BaTiO3). x Sr 1-x TiO3(0 <x<1))。

[0031] Silane coupling agents are used to enhance the compatibility between nanofillers and resin matrices. They mainly include epoxy-based silane coupling agents and amino-based silane coupling agents, including but not limited to:

[0032] The content relationships among the components are as follows: In the four resin compositions of BMI, liquid crystal epoxy resin, cyanate ester, and film-forming agent, BMI accounts for 30wt%-95wt% of the total resin composition, preferably 50wt%-90wt%; liquid crystal epoxy resin accounts for 5wt%-30wt% of the total resin composition, preferably 10wt%-20wt%; cyanate ester (CE) accounts for 0wt%-50wt% of the total resin composition, preferably 30%-50%; and film-forming agent accounts for 0wt%-30wt% of the total resin composition, preferably 5%-15%.

[0033] The curing accelerator accounts for 0.05wt%-2wt% of the total resin composition, preferably 0.1wt%-1.0wt%.

[0034] The high dielectric constant nanofiller accounts for 10wt%-70wt% of the total composition, preferably 20wt%-50wt%.

[0035] The coupling agent accounts for 0.05wt%-2.0wt% of the total filler content, with an optimized range of 0.1wt%-1.0wt%.

[0036] Secondly, the present invention provides a method for preparing a bismaleimide-based dielectric insulating film for embedded capacitors as described above, comprising the following steps: when the composition includes bismaleimide resin, liquid crystal epoxy resin and catalyst, the method proceeds as follows: S11. The bismaleimide resin, liquid crystal epoxy resin and catalyst are dissolved in an organic solvent in a certain mass ratio, and heated and dissolved under magnetic stirring until fully dissolved to obtain a clear and transparent solution. A slurry of the composition is obtained, the solid content of which is 0.1wt%-20wt%, preferably 1wt%-2wt%.

[0037] S12. The above-prepared slurry is used to form a film by solution casting. Specifically, the slurry is uniformly coated on a glass substrate, and then baked in a forced-air oven at 60-90℃ for about 10 hours to allow the solvent to evaporate as much as possible, resulting in an uncrosslinked insulating film; S13. The glass substrate after solvent evaporation is placed in a vacuum oven and subjected to a crosslinking reaction at multiple temperatures between 150℃ and 250℃ to obtain a crosslinked insulating film; wherein, the preferred crosslinking process is 160℃×2h+180℃×2h+200℃×4h+220℃×4h.

[0038] S14. The glass substrate with the cross-linked insulating film is placed in deionized water to peel off the film. The peeled film is then placed in a vacuum oven for high-temperature drying to obtain a highly cross-linked bismaleimide dielectric insulating film.

[0039] When the composition contains bismaleimide resin, liquid crystal epoxy resin, cyanate ester and catalyst, the following steps are followed: S21. The bismaleimide resin, liquid crystal epoxy resin, cyanate ester and catalyst are dissolved in an organic solvent in a certain mass ratio, and heated and dissolved under magnetic stirring until fully dissolved to obtain a clear and transparent solution, thereby obtaining a composition slurry. The solid content of the slurry is 0.1wt%-20wt%, preferably 1wt%-2wt%.

[0040] S22. The above-prepared slurry is used to form a film by solution casting. Specifically, the slurry is uniformly coated on a glass substrate and then baked in a forced-air oven at 60-90℃ for about 10 hours to allow the solvent to evaporate as much as possible, resulting in an uncrosslinked insulating film; S23. The glass substrate after solvent evaporation is placed in a vacuum oven and subjected to a crosslinking reaction at multiple temperatures between 150℃ and 250℃ to obtain a crosslinked insulating film; wherein, the preferred crosslinking process is 120℃×3h+180℃×2h+200℃×2h+230℃×4h.

[0041] S24. The glass substrate with the cross-linked film is placed in deionized water to peel off the film. The peeled-off insulating film is placed in a vacuum oven for high-temperature drying to obtain a highly cross-linked bismaleimide dielectric insulating film.

[0042] When the composition contains bismaleimide resin, liquid crystal epoxy resin, film-forming agent and catalyst, the following steps are followed: S31. The bismaleimide resin, liquid crystal epoxy resin, film-forming agent and catalyst are dissolved in an organic solvent in a certain mass ratio, and heated and dissolved under magnetic stirring until fully dissolved to obtain a clear and transparent solution, thereby obtaining a composition slurry. The solid content of the slurry is 0.1wt%-20wt%, preferably 1wt%-2wt%.

[0043] S32. The above-prepared slurry is used to form a film by solution casting. Specifically, the slurry is uniformly coated on a glass substrate, and then baked in a forced-air oven at 60-90℃ for about 10 hours to allow the solvent to evaporate as much as possible, resulting in an uncrosslinked insulating film; S33. The glass substrate after solvent evaporation is placed in a vacuum oven and subjected to a crosslinking reaction at multiple temperatures between 150℃ and 250℃ to obtain a crosslinked insulating film; wherein, the preferred crosslinking process is 160℃×2h+180℃×2h+200℃×4h+220℃×4h.

[0044] S34. The glass substrate with the cross-linked film is placed in deionized water to peel off the film. The peeled film is then placed in a vacuum oven for high-temperature drying to obtain a highly cross-linked bismaleimide dielectric insulating film.

[0045] When the composition contains bismaleimide resin, liquid crystal epoxy resin, high dielectric constant nanofiller, catalyst and silane coupling agent, the following steps are followed: S41. The bismaleimide resin, liquid crystal epoxy resin, nanofiller, catalyst and silane coupling agent are dissolved in an organic solvent in a certain mass ratio, and mechanically stirred at room temperature to obtain a composition slurry. The solid content of the slurry is 10wt%-50wt%, preferably 30wt%-40wt%.

[0046] S42. The prepared slurry is ball-milled and then film-forming is performed using a solution casting method. Specifically, the slurry is uniformly coated onto a PTFE plate and then baked in a forced-air oven at 60-90℃ for about 10 hours to allow the solvent to evaporate as much as possible, resulting in an uncrosslinked insulating film; S43. The PTFE plate after solvent evaporation is placed in a vacuum oven and subjected to a crosslinking reaction at multiple temperature ranges between 150℃ and 250℃ to obtain a crosslinked insulating film; wherein, the preferred crosslinking process is 160℃×2h+180℃×2h+200℃×4h+220℃×4h.

[0047] S44. Peel the cross-linked thick film off the PTFE plate to obtain a bismaleimide-based composite dielectric insulating film.

[0048] Example 1: The raw materials involved in this example include 2,2-bis[4-(4-maleimide phenoxy)phenyl]propane, liquid crystal epoxy resin of grade NC3000H, and 2-ethyl-4-methylimidazole.

[0049] The preparation steps are as follows: BMP and NC3000H are mixed in a mass ratio of 90:10, and 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.18 g of BMP, 0.02 g of NC3000H, and 0.002 g of 2E4MZ, and add 10 ml of N,N-dimethylformamide (DMF) to prepare a solution.

[0050] The above solution was magnetically stirred at 60°C for 10 hours to dissolve the solute completely in the solvent, resulting in a BMP / NC3000H mixed solution.

[0051] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0052] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0053] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0054] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H 90 / 10 insulating film.

[0055] Results: The BMP / NC3000H 90 / 10 semi-cured insulating film prepared in this embodiment has a low curing temperature of 197℃, as shown in Figure 1. The fully cured insulating film prepared in this embodiment has high breakdown strength, as shown in Figure 2, with a DC breakdown field strength of 615MV / m at 200℃; its dielectric constant is 3.71 at 1kHz at room temperature, as shown in Figure 3; the energy storage density and charge / discharge efficiency at 200℃ are shown in Figure 4, with the breakdown strength increased to 550MV / m and the discharge energy density reaching 5.07J / cm². 3 The charge / discharge efficiency is 87%.

[0056] Example 2: The raw materials involved in this example include BMP, NC3000H, and 2E4MZ.

[0057] The preparation steps are as follows: BMP and NC3000H are mixed in a mass ratio of 95:5, and 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.19 g of BMP, 0.01 g of NC3000H, and 0.002 g of 2E4MZ, and add 10 ml of DMF to prepare a solution.

[0058] The above solution was magnetically stirred at 60°C for 10 hours to dissolve the solute completely in the solvent, resulting in a BMP / NC3000H mixed solution.

[0059] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0060] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0061] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0062] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H 95 / 5 insulating film.

[0063] Results: The BMP / NC3000H 95 / 5 semi-cured insulating film prepared in this embodiment has a low curing temperature of 208℃, as shown in Figure 1. The fully cured insulating film prepared in this embodiment has high breakdown strength, as shown in Figure 2, with a DC breakdown field strength of 602MV / m at 200℃; its dielectric constant is 3.59 at 1kHz at room temperature, as shown in Figure 3; its energy storage density and charge / discharge efficiency at 200℃ are shown in Figure 4, with the breakdown strength increased to 550MV / m and the discharge energy density reaching 4.61J / cm². 3 The charge / discharge efficiency is 83%.

[0064] Example 3: The raw materials involved in this example include BMP, NC3000H, and 2E4MZ.

[0065] The preparation steps are as follows: BMP and NC3000H are mixed in a mass ratio of 85:15, and 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.17 g of BMP, 0.03 g of NC3000H, and 0.002 g of 2E4MZ, and add 10 ml of DMF to prepare a solution.

[0066] The above solution was magnetically stirred at 60°C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a BMP / NC3000H mixture solution.

[0067] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0068] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0069] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0070] The film was placed in a vacuum oven and dried at 200 °C for 10 hours to obtain BMP / NC3000H 85 / 15 insulating film.

[0071] Results: The BMP / NC3000H 85 / 15 semi-cured insulating film prepared in this embodiment has a low curing temperature of 189 ℃, as shown in Figure 1. The fully cured insulating film prepared in this embodiment has high breakdown strength, as shown in Figure 2. Its DC breakdown field strength is 593 MV / m at 200 ℃; its dielectric constant is 3.81 at 1 kHz at room temperature, as shown in Figure 3; its energy storage density and charge / discharge efficiency at 200 ℃ are shown in Figure 4, with the breakdown strength increased to 500 MV / m and the discharge energy density reaching 3.87 J / cm². 3 The charge / discharge efficiency is 82%.

[0072] Example 4: The raw materials involved in this example include BMP, NC3000H, and 2E4MZ.

[0073] The preparation steps are as follows: BMP and NC3000H are mixed in a mass ratio of 80:20, and 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.16 g of BMP, 0.04 g of NC3000H, and 0.002 g of 2E4MZ, and add 10 ml of DMF to prepare a solution.

[0074] The above solution was magnetically stirred at 60°C for 10 hours to dissolve the solute completely in the solvent, resulting in a BMP / NC3000H mixed solution.

[0075] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0076] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0077] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0078] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain a BMP / NC3000H 80 / 20 polymer film.

[0079] Results: The BMP / NC3000H 80 / 20 semi-cured insulating film prepared in this embodiment has a low curing temperature of 185℃, as shown in Figure 1. The fully cured insulating film prepared in this embodiment has high breakdown strength, as shown in Figure 2, with a DC breakdown field strength of 581MV / m at 200℃; its dielectric constant is 3.93 at 1kHz at room temperature, as shown in Figure 3; its energy storage density and charge / discharge efficiency at 200℃ are shown in Figure 4, with the breakdown strength increased to 550MV / m and the discharge energy density reaching 4.33J / cm². 3 The charge / discharge efficiency is 71%.

[0080] Example 5: The raw materials involved in this example include BMP, NC3000H, and 2E4MZ.

[0081] The preparation steps are as follows: BMP and NC3000H are mixed in a mass ratio of 70:30, and 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.14 g of BMP, 0.06 g of NC3000H, and 0.002 g of 2E4MZ, and add 10 ml of DMF to prepare a solution.

[0082] The above solution was magnetically stirred at 60 °C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a BMP / NC3000H mixed solution.

[0083] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0084] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0085] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0086] The film was placed in a vacuum oven and dried at 200 °C for 10 hours to obtain BMP / NC3000H 70 / 30 insulating film.

[0087] Results: The BMP / NC3000H 70 / 30 semi-cured insulating film prepared in this embodiment has a low curing temperature of 180℃, as shown in Figure 1. The fully cured insulating film prepared in this embodiment has high breakdown strength, as shown in Figure 2, with a DC breakdown field strength of 569MV / m at 200℃; its dielectric constant is 4.07 at 1kHz at room temperature, as shown in Figure 3; its energy storage density and charge / discharge efficiency at 200℃ are shown in Figure 4, with the breakdown strength increased to 550MV / m and the discharge energy density reaching 4.57J / cm². 3 The charge / discharge efficiency is 68%.

[0088] Example 6: The raw materials involved in this example include BMP, NC3000H, bisphenol A cyanate (BADcy), 2E4MZ, and dibutyltin dilaurate (DBTDL).

[0089] The preparation steps are as follows: BMP, NC3000H, and BADcy are mixed in a mass ratio of 50:10:40. 1 wt% of 2E4MZ and 0.1 wt% of DBTDL (based on the mass of BADcy) are added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.1 g of BMP, 0.02 g of NC3000H, 0.08 g of BADcy, 0.002 g of 2E4MZ, and 0.08 mg of DBTDL, and add 10 ml of DMF to prepare a solution.

[0090] The above solution was magnetically stirred at 60°C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a BMP / NC3000H / BADcy mixed solution.

[0091] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0092] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 120℃ for three hours, 180℃ for two hours, 200℃ for two hours, and 230℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0093] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0094] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H / BADcy50 / 10 / 40 insulating film.

[0095] Results: The BMP / NC3000H / BADcy 50 / 10 / 40 semi-cured insulating film prepared in this embodiment has a low curing temperature of 201℃, as shown in Figure 5. The fully cured insulating film prepared in this embodiment has high breakdown strength and energy density, as shown in Figure 6. At 200℃, the breakdown strength increases to 600MV / m, and the discharge energy density is 6.19J / cm². 3 The charge / discharge efficiency is 90%.

[0096] Example 7: The raw materials involved in this example include BMP, NC3000H, BADcy, 2E4MZ, and DBTDL.

[0097] The preparation steps are as follows: BMP, NC3000H, and BADcy are mixed in a mass ratio of 40:10:50. 1 wt% of 2E4MZ and 0.1 wt% of DBTDL (based on the mass of BADcy) are added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.08 g of BMP, 0.02 g of NC3000H, 0.1 g of BADcy, 0.002 g of 2E4MZ, and 0.1 mg of DBTDL, and add 10 ml of DMF to prepare a solution.

[0098] The above solution was magnetically stirred at 60 °C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a BMP / NC3000H / BADcy mixed solution.

[0099] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0100] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 120℃ for three hours, 180℃ for two hours, 200℃ for two hours, and 230℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0101] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0102] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H / BADcy40 / 10 / 50 insulating film.

[0103] Results: The BMP / NC3000H / BADcy 40 / 10 / 50 semi-cured insulating film prepared in this embodiment has a low curing temperature of 194℃, as shown in Figure 5. The fully cured insulating film prepared in this embodiment has high breakdown strength and energy density, as shown in Figure 6. At 200℃, the breakdown strength increases to 600MV / m, and the discharge energy density is 6J / cm². 3 The charge / discharge efficiency is 85%.

[0104] Example 8: The raw materials involved in this example include BMP, NC3000H, YP-50S type bisphenol A phenoxy resin, and 2E4MZ.

[0105] The preparation steps are as follows: The matrix resin and YP-50S are mixed in a mass ratio of 99:1. The matrix resin is composed of BMP and NC3000H in a mass ratio of 90:10. 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.1782 g of BMP, 0.0198 g of NC3000H, 0.002 g of YP-50S, and 0.00198 g of 2E4MZ, and add 10 ml of DMF to prepare a solution.

[0106] The above solution was magnetically stirred at 60°C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a mixed solution of BMP / NC3000H / YP-50S.

[0107] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0108] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0109] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0110] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H (90 / 10)+YP-50S (1wt%) insulating film.

[0111] Results: The BMP / NC3000H (90 / 10) + YP-50S (1wt%) insulating film prepared in this embodiment exhibits high breakdown strength and energy density. As shown in Figure 7, the breakdown strength remains at 550 MV / m at 200℃, and the discharge energy density is 4.67 J / cm². 3 The charge-discharge efficiency is 64.3%; as shown in Figure 8, it has excellent toughness, and the elongation at break is increased to 3.3%.

[0112] Example 9: The raw materials involved in this example include BMP, NC3000H, YP-50S, and 2E4MZ.

[0113] The preparation steps are as follows: The matrix resin and YP-50S are mixed in a mass ratio of 90:10. The matrix resin is composed of BMP and NC3000H in a mass ratio of 90:10. 1 wt% of 2E4MZ is added to prepare a solution with a concentration of approximately 2 wt%. For example, weigh 0.162 g of BMP, 0.018 g of NC3000H, 0.02 g of YP-50S, and 0.0018 g of 2E4MZ, and add 10 ml of DMF to prepare the solution.

[0114] The above solution was magnetically stirred at 60 °C for 10 hours to ensure that the solute was fully dissolved in the solvent, thus obtaining a mixed solution of BMP / NC3000H / YP-50S.

[0115] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0116] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0117] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0118] The film was placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP / NC3000H (90 / 10)+YP-50S (10 wt%) insulating film.

[0119] Results: The BMP / NC3000H (90 / 10) + YP-50S (10wt%) insulating film prepared in this embodiment exhibits high breakdown strength and energy density. As shown in Figure 7, the breakdown strength remains at 550 MV / m at 200℃, and the discharge energy density is 4.31 J / cm². 3 The charge-discharge efficiency is 58.7%; as shown in Figure 8, it has excellent toughness, and the elongation at break is increased to 6.6%.

[0120] Example 10: The raw materials involved in this example include BMP, NC3000H, barium titanate (BaTiO3), 2E4MZ, and 3-aminopropyltriethoxysilane (KBE-903).

[0121] The preparation steps are as follows: Resin and BaTiO3 are mixed in a mass ratio of 90:10. The resin is composed of BMP and NC3000H in a mass ratio of 90:10. 1 wt% of 2E4MZ (resin mass) and 1 wt% of KBE-903 (filler mass) are added to prepare a slurry with a concentration of approximately 33 wt%. For example, weigh 8.1 g of BMP, 0.9 g of NC3000H, 1 g of BaTiO3, 0.09 g of 2E4MZ, and 0.01 g of KBE-903, and add 30 ml of DMF to prepare the slurry.

[0122] The above slurry was mechanically stirred at 500 rpm for 6 hours at room temperature to dissolve it, so that the solute was mixed evenly, and a BMP / NC3000H / BaTiO3 mixed solution was obtained.

[0123] The above mixed solution was ball-milled at 800 rpm for 6 hours to ensure that the filler was fully and evenly dispersed.

[0124] Wipe the PTFE plate clean to avoid dust contamination. Then, preheat the PTFE plate in a 70°C oven for half an hour. Next, use a dropper to add 7.5 ml of the above mixed solution to the PTFE plate, allowing the solution to flow evenly on the PTFE plate. Then, bake the plate in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0125] After the solvent has evaporated, the PTFE plate is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time for each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, the plate is removed.

[0126] The film was peeled off from the PTFE plate to obtain a composite dielectric insulating film of BMP / NC3000H (90 / 10) + BaTiO3 (10 wt%).

[0127] Results: The BMP / NC3000H (90 / 10) + BaTiO3 (10wt%) composite dielectric insulating film prepared in this embodiment has a high dielectric constant, as shown in Figure 9. Its dielectric constant is 4.35 at room temperature and 1kHz.

[0128] Example 11: The raw materials involved in this example include BMP, NC3000H, BaTiO3, 2E4MZ, and KBE-903.

[0129] The preparation steps are as follows: Resin and BaTiO3 are mixed in a mass ratio of 80:20. The resin is composed of BMP and NC3000H in a mass ratio of 90:10. 1 wt% of 2E4MZ (resin mass) and 1 wt% of KBE-903 (filler mass) are added to prepare a slurry with a concentration of approximately 33 wt%. For example, weigh 7.2 g of BMP, 0.8 g of NC3000H, 2 g of BaTiO3, 0.08 g of 2E4MZ, and 0.02 g of KBE-903, and add 30 ml of DMF to prepare the slurry.

[0130] The above slurry was mechanically stirred at 500 rpm for 6 hours at room temperature to dissolve it, so that the solute was mixed evenly, and a BMP / NC3000H / BaTiO3 mixed solution was obtained.

[0131] The above mixed solution was ball-milled at 800 rpm for 6 hours to ensure that the filler was fully and evenly dispersed.

[0132] Wipe the PTFE plate clean to avoid dust contamination. Then, preheat the PTFE plate in a 70°C oven for half an hour. Next, use a dropper to add 7.5 ml of the above mixed solution to the PTFE plate, allowing the solution to flow evenly on the PTFE plate. Then, bake the plate in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0133] After the solvent has evaporated, the PTFE plate is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time for each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, the plate is removed.

[0134] The film was peeled off from the PTFE plate to obtain a composite dielectric insulating film of BMP / NC3000H (90 / 10) + BaTiO3 (20wt%).

[0135] Results: The BMP / NC3000H (90 / 10) + BaTiO3 (20wt%) composite dielectric insulating film prepared in this embodiment has a high dielectric constant, as shown in Figure 9. Its dielectric constant is 7.03 at 1kHz at room temperature.

[0136] Comparative Example 1: The raw materials involved in this embodiment include BMP and 2E4MZ.

[0137] The preparation steps are as follows: Weigh 0.2g of BMP and 0.002g of 2E4MZ, add 10ml of DMF to prepare a solution with a concentration of approximately 2wt%.

[0138] The above solution was magnetically stirred at 60°C for 10 hours to dissolve the solute completely in the solvent, thus obtaining a BMP solution.

[0139] Clean the glass slide thoroughly to avoid dust contamination. Then, preheat the glass slide in a 70°C oven for half an hour. Next, use a dropper to add 5 ml of the above mixed solution to the glass slide, allowing the solution to flow naturally on the glass slide. Bake in a 70°C oven for 10 hours to allow the solvent to evaporate.

[0140] After the solvent has evaporated, the glass slide is placed in a vacuum oven and the temperature is adjusted to carry out a multi-stage high-temperature reaction. The temperature and time of each stage are as follows: 160℃ for two hours, 180℃ for two hours, 200℃ for four hours, and 220℃ for four hours. After naturally cooling to room temperature, a highly cross-linked film is obtained.

[0141] Soak the glass slide with the film in deionized water. After a period of time, the film will detach from the glass slide on its own. Place the detached film on aluminum foil.

[0142] The film is placed in a vacuum oven and dried at 200°C for 10 hours to obtain BMP insulating film.

[0143] Comparative Results: The curing temperature of the BMP semi-cured insulating film prepared in this comparative example is as high as 225℃, as shown in Figure 1. The DC breakdown strength of the fully cured insulating film prepared in this comparative example is shown in Figure 2, which is only 509 MV / m at 200℃; its dielectric constant at 1 kHz at room temperature is 3.45, as shown in Figure 3; the energy storage density and charge / discharge efficiency at 200℃ are shown in Figure 4, exhibiting low energy storage density and efficiency. At an electric field strength of 500 MV / m, the charge / discharge efficiency is only 62%, and the discharge energy density is 3.68 J / cm². 3 The embodiments of this application have been described above with reference to the accompanying drawings. Unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other. This application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A bismaleimide-based dielectric composition for embedded capacitors, characterized in that: It includes a total resin, a latent curing accelerator, an optional high dielectric constant nanofiller, and an optional silane coupling agent; the total resin is composed of bismaleimide resin and liquid crystal epoxy resin, or of bismaleimide resin, liquid crystal epoxy resin and cyanate ester resin, or of bismaleimide resin, liquid crystal epoxy resin and film-forming agent.

2. The bismaleimide-based dielectric composition for embedded capacitors according to claim 1, characterized in that: Bismaleimide resin accounts for 30wt%-95wt% of the total resin composition; liquid crystal epoxy resin accounts for 5wt%-30wt% of the total resin composition; if it contains cyanate ester resin, it accounts for 0wt%-50wt% of the total resin composition; if it contains film-forming agent, it accounts for 0wt%-30wt% of the total resin composition; latent curing accelerator accounts for 0.05wt%-2wt% of the total resin composition; if it contains high dielectric constant nanofiller, it accounts for 10wt%-70wt% of the total mass of the composition; if it contains silane coupling agent, it accounts for 0.05wt%-2.0wt% of the total content of high dielectric constant nanofiller.

3. The bismaleimide-based dielectric composition for embedded capacitors according to claim 2, characterized in that: The bismaleimide resin is a symmetrical bifunctional compound containing two maleimide rings, including but not limited to 2,2-bis[4-(4-maleimide-phenoxy)phenyl]propane, 4,4'-bismaleimide-diphenylmethane, and bis(3-ethyl-5-methyl-4-maleimide-phenyl)methane.

4. The bismaleimide-based dielectric composition for embedded capacitors according to claim 2, characterized in that: The general molecular structural formula of the liquid crystal epoxy resin is: Where -R2- includes, but is not limited to: 、 、 、 、 、 、 、 、 、 ;in Y in 、 、 、 。 5. The bismaleimide-based dielectric composition for embedded capacitors according to claim 1, characterized in that: The cyanate ester resin is a compound containing cyanate ester functional groups, including but not limited to bisphenol A cyanate ester, bisphenol E cyanate ester, bisphenol M cyanate ester, and tetramethylbisphenol F cyanate ester.

6. The bismaleimide-based dielectric composition for embedded capacitors according to claim 5, characterized in that: The film-forming agents include, but are not limited to, bisphenol A phenoxy resin, bisphenol F phenoxy resin, and polyvinyl butyral.

7. The bismaleimide-based dielectric composition for embedded capacitors according to claim 5, characterized in that: The latent curing accelerators include, but are not limited to, 1-cyanoethyl-2-ethyl-4-methylimidazole, microencapsulated 2-ethyl-4-methylimidazole, and microencapsulated dibutyltin dilaurate.

8. The bismaleimide-based dielectric composition for embedded capacitors according to claim 1, characterized in that: The high dielectric constant nanofiller includes barium titanate, strontium titanate, and barium strontium titanate; the silane coupling agent includes epoxy silane coupling agents and amino silane coupling agents, including but not limited to 3-glycidyl etheroxypropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, and 3-aminopropyltriethoxysilane.

9. A method for preparing a bismaleimide-based dielectric composition for embedded capacitors, based on the bismaleimide-based dielectric composition for embedded capacitors according to any one of claims 1-8, characterized in that: The process includes the following steps: Step 1: Dissolve the raw materials in an organic solvent according to the specified ratio and stir until a uniform slurry is formed; the raw materials include a total resin and a latent curing accelerator, wherein the total resin is composed of bismaleimide resin and liquid crystal epoxy resin, or composed of bismaleimide resin, liquid crystal epoxy resin and cyanate ester resin, or composed of bismaleimide resin, liquid crystal epoxy resin and film-forming agent, or composed of bismaleimide resin, liquid crystal epoxy resin, high dielectric constant nanofiller and silane coupling agent; Step 2: Coat the slurry onto a substrate and bake at 60-90℃ for 10 hours to evaporate the solvent, obtaining an uncrosslinked insulating film; Step 3: Place the substrate carrying the uncrosslinked insulating film in a vacuum oven and perform a multi-stage temperature crosslinking reaction at 150℃~250℃; Step 4: After peeling or stripping the film, dry the film at high temperature to obtain a bismaleimide-based insulating film.

10. A method for preparing the bismaleimide-based dielectric composition for embedded capacitors according to claim 9, characterized in that: When the raw materials are bismaleimide resin, liquid crystal epoxy resin and latent curing accelerator, the solid content of the slurry in step one is 0.1wt%-20wt%, and the stirring conditions are magnetic stirring at 60℃ for 10 hours; the substrate in step two is a glass substrate, silicon substrate, PTFE substrate, high-temperature polymer carrier film or other matrix; the multi-stage temperature crosslinking reaction in step three is 160℃×2h+180℃×2h+200℃×4h+220℃×4h; the film peeling method in step four is to immerse the carrier substrate in deionized water to remove the film, and the high-temperature drying conditions are vacuum drying at 200℃ for 10 hours.

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