Photoelectric detection preamplifier circuit and photoelectric detection system

Abstract

The invention provides a photoelectric detection pre-amplifier circuit and a photoelectric detection system, which are used for measuring optical modulation signals of a specific frequency band or multiple frequency bands, and relates to the technical field of photoelectric detection. The photoelectric detection preamplifier circuit comprises an operational amplifier, a feedback resonance network and a parallel resonance compensation network, the first end of the feedback resonance network is coupled with the inverted input end of the operational amplifier, and the second end of the feedback resonance network is coupled with the output end of the operational amplifier. The first end of the parallel resonance compensation network is coupled with the inverted input end of the operational amplifier, the second end of the parallel resonance compensation network is coupled with the grounding end, and the third end of the parallel resonance compensation network is coupled with the power input end. The invention aims to solve the problem that an existing photoelectric detection pre-amplifier circuit cannot meet the application requirement of a high-sensitivity photoelectric detection system.

Description

Technical Field

[0001] This application relates to the field of photoelectric detection technology, and in particular to a photoelectric detection preamplifier circuit and a photoelectric detection system. Background Technology

[0002] With the rapid development of technologies such as optical communication, laser ranging, spectral analysis, and precision detection, higher demands are being placed on the detection of photoelectric signals, requiring high sensitivity, wide bandwidth, and low noise. Photoelectric detection systems typically use photodiodes as the core component to convert incident light signals into weak current signals. However, because the photocurrent output by photodiodes has a small amplitude and is susceptible to noise interference, a photoelectric detection preamplifier circuit is necessary for current-to-voltage conversion and signal amplification.

[0003] Currently, the amplification factor and bandwidth of traditional photoelectric detection preamplifiers are limited by the gain-bandwidth product of the operational amplifier and the feedback resistor value, making it difficult to achieve high selective amplification for specific frequency signals. They cannot simultaneously achieve high gain, low noise, and frequency selectivity, resulting in insufficient signal-to-noise ratio and weak anti-interference capability, failing to meet the application requirements of high-sensitivity photoelectric detection. Summary of the Invention

[0004] The embodiments disclosed in this application provide a photoelectric detection preamplifier circuit and a photoelectric detection system. The embodiments of this application adopt the following technical solutions: In a first aspect, a photoelectric detection preamplifier circuit is provided, comprising: an operational amplifier, a feedback resonant network, and a parallel resonant compensation network. The first end of the feedback resonant network is coupled to the inverting input terminal of the operational amplifier, and the second end of the feedback resonant network is coupled to the output terminal of the operational amplifier. The parallel resonant compensation network has its first end coupled to the inverting input terminal of the operational amplifier, its second end coupled to a ground terminal, and its third end coupled to a power input terminal.

[0005] The photoelectric detection preamplifier circuit provided in this application sets a feedback resonant network at the negative feedback terminal of the operational amplifier, so that the resonant frequency of the feedback resonant network is not affected by the change in the junction capacitance of the photodiode in the parallel resonant compensation network. This avoids the problem of resonant frequency drift of the feedback resonant network caused by the reverse bias voltage fluctuation of the photodiode or the action of high-intensity ultrafast pulses, and improves the stability of the resonant frequency of the amplifier circuit.

[0006] In one possible implementation of the first aspect, the feedback resonant network includes a feedback resistor, a feedback inductor, and a feedback capacitor. A first end of the feedback resistor is coupled to a first end of the feedback resonant network, a second end of the feedback resistor is coupled to a second end of the feedback resonant network, a first end of the feedback inductor is coupled to a first end of the feedback resonant network, a second end of the feedback inductor is coupled to a second end of the feedback resonant network, a first end of the feedback capacitor is coupled to a first end of the feedback resonant network, and a second end of the feedback capacitor is coupled to a second end of the feedback resonant network.

[0007] In one possible implementation of the first aspect, the parallel resonant compensation network includes a photodiode and a grounding inductor. The anode of the photodiode is coupled to a first end of the parallel resonant compensation network, the cathode of the photodiode is coupled to a third end of the parallel resonant compensation network, the first end of the grounding inductor is coupled to a first end of the parallel resonant compensation network, and the second end of the grounding inductor is coupled to a second end of the parallel resonant compensation network.

[0008] In one possible implementation of the first aspect, the photodiode includes a large photosensitive surface silicon photodiode.

[0009] The photodetector preamplifier circuit provided in this application enables the device to maintain high photoelectric conversion efficiency when receiving high-power incident light signals by setting the photodiode as a silicon photodiode with a large photosensitive surface.

[0010] Furthermore, by introducing a grounded inductor element into the parallel resonant compensation network, inductive compensation is provided for the junction capacitance of the photodiode, achieving parallel resonant matching between the junction capacitance and the inductance. This avoids the self-oscillation problem that easily occurs in traditional parallel resonant photodetector preamplifier circuits when using large-area silicon photodiodes, ensuring the amplifier's operational stability.

[0011] In one possible implementation of the first aspect, a photodiode is used to convert an optical signal into a current signal, and a feedback resonant network is used to convert the current signal into a voltage signal.

[0012] In one possible implementation of the first aspect, the factor by which the feedback resonant network converts the current signal into a voltage signal is determined based on the complex impedance of the feedback resonant network.

[0013] The photoelectric detection preamplifier circuit provided in this application achieves adaptive tuning and frequency-selective amplification of the target signal frequency under different resonance conditions by adjusting the parameter configuration of the feedback resistor, feedback inductor, and feedback capacitor in the feedback resonant network. By reasonably matching the combination relationship of the inductor and capacitor and the value of the feedback resistor, the current-to-voltage conversion factor can be flexibly adjusted, thereby achieving signal amplification of different factors while maintaining system stability, to meet the comprehensive performance requirements of gain, bandwidth, and signal-to-noise ratio in different application scenarios.

[0014] In one possible implementation of the first aspect, the feedback resonant network has the same resonant frequency as the parallel resonant compensation network.

[0015] The photoelectric detection preamplifier circuit provided in this application can, by adjusting the value of the grounding inductor, make the parallel resonant compensation network composed of the grounding inductor and the photodiode junction capacitance have the same resonant frequency as the feedback resonant network, thereby improving the signal-to-noise ratio of the output signal of the photoelectric detection preamplifier circuit and preventing the self-oscillation of the operational amplifier.

[0016] In a second aspect, a photoelectric detection system is provided, which includes a photoelectric detection preamplifier circuit and a signal processing circuit. The photoelectric detection preamplifier circuit is connected to the signal processing circuit, and the photoelectric detection preamplifier circuit includes any of the photoelectric detection preamplifier circuits in the first aspect.

[0017] The technical effects of the second aspect refer to the technical effects of the first aspect and any of its embodiments, and will not be repeated here. Attached Figure Description

[0018] Figure 1 A schematic diagram of a photoelectric detection system provided in an embodiment of this application; Figure 2 This is a schematic diagram of a photoelectric detection preamplifier circuit provided in an embodiment of this application; Figure 3 A schematic diagram of another photoelectric detection preamplifier circuit provided in an embodiment of this application; Figure 4 A schematic diagram of another photoelectric detection preamplifier circuit provided in an embodiment of this application; Figure 5 A schematic diagram of another photoelectric detection preamplifier circuit provided in an embodiment of this application; Figure 6 This is a schematic diagram of a measurement benchmark and the test results of the shot noise limit provided in an embodiment of this application. Detailed Implementation

[0019] The technical solutions in some embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application are within the scope of protection of this application.

[0020] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "exemplary," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, a particular feature, structure, material, or characteristic may be included in any suitable manner in any one or more embodiments or examples.

[0021] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this application, unless otherwise stated, "a plurality of" means two or more.

[0022] In describing some embodiments, the term "coupled" and its derivative expressions may be used. For example, the term "coupled" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact; in this case, "coupled" can also be described as "connected." Furthermore, the term "coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0023] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0024] "A and / or B" includes three combinations: A only, B only, and a combination of A and B. The use of "applies to" or "configured to" in this document implies open and inclusive language, which does not preclude applicability to or configuration to perform additional tasks or steps on devices. Additionally, the use of "based on" implies openness and inclusivity, as processes, steps, calculations, or other actions "based on" one or more conditions or values ​​may in practice be based on additional conditions or values ​​beyond those conditions.

[0025] With the rapid development of technologies such as optical communication, lidar, stimulated Raman scattering imaging, and high-precision spectral detection, higher requirements are being placed on the sensitivity, response speed, and signal-to-noise ratio of photoelectric detection systems. In these application scenarios, the incident light signal is often extremely weak, with optical power as low as microwatts or even picowatts, and the signal is easily affected by environmental noise and background light interference.

[0026] To obtain effective optical information, it is necessary to effectively extract the micro-light signal. A photoelectric detection system, as a device that converts optical signals into electrical signals, can use photodiodes and other photoelectric conversion devices to convert incident light signals into current signals. These signals are then amplified and filtered by a photoelectric detection preamplifier circuit to obtain a voltage signal that can be used for subsequent signal processing or data analysis. It plays a crucial role in achieving high-sensitivity photoelectric detection and precise optical signal measurement.

[0027] In one feasible implementation, see [reference] Figure 1 The photoelectric detection system 100 shown may include a photoelectric detection preamplifier circuit 101 and a signal processing circuit 102. The photoelectric detection preamplifier circuit 101 is used to receive the weak current signal generated by the photoelectric detector and convert it into a voltage signal with a high signal-to-noise ratio. At the same time, it performs preliminary amplification and noise suppression on the signal to improve the signal-to-noise ratio and stability. The signal processing circuit 102 is connected to the output terminal of the photoelectric detection preamplifier circuit 101 and is used to further condition and analyze the pre-amplified voltage signal. Its functions may include, but are not limited to, main amplifier gain adjustment, bandpass filtering to remove noise outside a specific frequency band, peak detection or waveform shaping to extract the characteristic information of the signal, and finally converting the processed analog signal into a digital signal or comparing it with a preset threshold to output a standard logic level.

[0028] In related technologies, photodetector preamplifier circuits can be implemented in various ways. In one feasible implementation, the photodetector preamplifier circuit may include a direct resistor amplifier circuit. Direct resistor amplifier circuits have the advantages of simple structure, ease of implementation, and no need for any external active components. By forming a simple photocurrent-to-voltage conversion path through a low-pass network composed of the photodiode and the load resistor, the output current signal of the photodiode is directly amplified. The signal amplification factor of this implementation depends on the resistance value of the load resistor; theoretically, the larger the resistance value, the higher the gain.

[0029] For example, see Figure 2 The illustrated photoelectric detection preamplifier circuit includes a photodiode and a load resistor. The anode of the photodiode is coupled to the load resistor and the signal output terminal, while the cathode is coupled to the bias voltage input terminal. The bias voltage input terminal can be a low-noise linear power supply to provide a stable reverse bias voltage for the photodiode. When the photodiode is irradiated by incident light, the incident photons generate electron-hole pairs in its depletion layer, forming a photocurrent signal under the action of an applied reverse electric field. This photocurrent is converted into a voltage signal by the load resistor and then output. The signal amplification factor of the circuit depends primarily on the resistance value of the load resistor; a larger load resistor results in a higher output voltage amplitude, thereby improving the detection sensitivity of the photoelectric signal.

[0030] However, the performance of photodetector preamplifier circuits based on direct resistor amplifiers is significantly limited by the resistance value and inherent noise. Specifically, in this structure, the output signal amplitude depends on the resistance value of the load resistor, and the thermal noise of the load resistor increases significantly with increasing resistance. To obtain a higher output voltage signal, the load resistance value needs to be increased, but this also leads to an increase in thermal noise voltage and a decrease in system bandwidth, thus limiting the signal-to-noise ratio. Since this type of circuit is usually used as the first stage of signal amplification in a photodetector module, its output signal-to-noise ratio directly affects the detection sensitivity and dynamic range of the entire photodetector system. Therefore, limited by the resistance value and inherent noise, this type of direct resistor amplifier circuit often struggles to effectively detect extremely weak light signals and cannot meet the requirements of high-sensitivity photodetector applications.

[0031] In one feasible implementation, the photodetector preamplifier circuit may further include a transimpedance amplifier circuit based on an operational amplifier. This circuit forms a closed-loop negative feedback structure by connecting the photodiode to the inverting input of the operational amplifier and placing a feedback resistor between the output and inverting input of the operational amplifier. The photocurrent generated by the photodiode when irradiated by incident light is directly converted into a voltage signal output. The value of the feedback resistor determines the current-to-voltage conversion ratio, i.e., the transimpedance gain. The output bandwidth of this scheme is mainly determined by the gain-bandwidth product of the operational amplifier and the feedback resistor. By selecting an operational amplifier with a large gain-bandwidth product, a wide bandwidth characteristic can be maintained while achieving high gain amplification. Compared with traditional direct resistive amplifier circuits, the transimpedance amplifier circuit based on an operational amplifier can significantly improve the signal amplification factor and dynamic response performance while maintaining a low noise level and a wide bandwidth, thereby achieving high-sensitivity detection of extremely weak light signals and effectively improving the signal-to-noise ratio and stability of the entire photodetector system.

[0032] For example, see Figure 3 The illustrated photoelectric detection preamplifier circuit includes a photodiode, a resistor, a capacitor, and an operational amplifier. The cathode of the photodiode is coupled to the bias voltage input terminal, the anode of the photodiode is coupled to the inverting input terminal of the operational amplifier, the non-inverting input terminal of the operational amplifier is coupled to the ground terminal, and the output terminal of the operational amplifier is coupled to the signal output terminal. When the photodiode receives an incident light signal, it generates a photocurrent proportional to the light intensity across its terminals. This photocurrent flows into the negative feedback loop through the input terminal of the operational amplifier and is converted into a voltage signal through the feedback resistor and capacitor, achieving high-precision amplification from photocurrent to voltage signal. By adjusting the value of the feedback resistor, the current-to-voltage conversion gain can be controlled, thereby adjusting the signal amplification factor and the system bandwidth to achieve the detection of light signals of different intensities and frequencies.

[0033] However, the method of implementing a photodetector preamplifier circuit based on an operational amplifier transimpedance amplifier still has some limitations. Because its frequency response typically exhibits low-pass characteristics, it is difficult to effectively distinguish the target signal from strong spurious signals at adjacent frequencies, and it is prone to output saturation under high-intensity background signals, resulting in the inaccurate detection of weak modulation signals. Furthermore, when the photodiode is irradiated by high-power pulsed light, the resulting strong DC component, if not filtered out, can also cause DC saturation in the amplifier, further limiting the system's dynamic range and stability.

[0034] To address the aforementioned issues, this application provides a photoelectric detection preamplifier circuit, including a feedback resonant network. The first end of the feedback resonant network is coupled to the inverting input of an operational amplifier, and the second end of the feedback resonant network is coupled to the output of the operational amplifier. A parallel resonant compensation network is also provided, with the first end of the parallel resonant compensation network coupled to the inverting input of the operational amplifier, the second end of the parallel resonant compensation network coupled to a ground terminal, and the third end of the parallel resonant compensation network coupled to a power input terminal.

[0035] By introducing a feedback resonant network into the negative feedback loop of the operational amplifier, frequency-selective amplification of the target signal and suppression of out-of-band spurious signals are achieved. Specifically, by adjusting the resonant frequency of the feedback resonant network to match the resonant frequency of the parallel resonant compensation network, a stable resonant response is formed in the target frequency band. This method not only significantly improves the output signal-to-noise ratio of the photoelectric detection preamplifier circuit but also effectively suppresses interference from low-frequency and high-frequency noise outside the target signal bandwidth, ensuring the amplitude stability and phase consistency of the output signal.

[0036] For example, see Figure 4 The photoelectric detection preamplifier circuit shown includes a parallel resonant compensation network 401, an operational amplifier 402, and a feedback resonant network 403. The first end of the feedback resonant network 403 is coupled to the inverting input terminal of the operational amplifier 402, and the second end of the feedback resonant network 403 is coupled to the output terminal of the operational amplifier 402. The parallel resonant compensation network 401 has its first end coupled to the inverting input terminal of the operational amplifier 402, its second end coupled to the ground terminal, and its third end coupled to the power input terminal.

[0037] In this structure, the photodiode in the parallel resonant compensation network 401 converts weak light signals into corresponding current signals and forms a significant resonant response within a specific frequency range to achieve compensation. The feedback resonant network 403 is located in the negative feedback loop of the operational amplifier 402 and is used to construct frequency characteristics matching the input in the feedback path. When the resonant frequency of the parallel resonant compensation network 401 matches the resonant frequency of the feedback resonant network 403, they form a synergistic resonance effect in the target frequency band, causing the input and feedback ends to simultaneously reach resonance at the same frequency point. Through this resonant frequency matching mechanism, the circuit can generate a resonance enhancement effect at the target signal frequency, significantly improving the gain and signal-to-noise ratio at that frequency point, and achieving efficient suppression in the out-of-band frequency band, thereby effectively eliminating the interference of spurious signals and noise on the target signal.

[0038] A parallel resonant compensation network is used to preprocess the current signal and achieve compensation, inputting the photocurrent signal into the feedback resonant network. In one feasible implementation, the parallel resonant compensation network includes a photodiode and a grounded inductor. The photodiode converts the incident light signal into a current signal, and the grounded inductor forms a parallel resonant structure with the junction capacitance of the photodiode to stabilize the operational amplifier, prevent self-oscillation at high frequencies, and simultaneously achieve resonance enhancement and noise suppression of the target frequency components.

[0039] For further examples, please refer to [link / reference]. Figure 5 The illustrated photoelectric detection preamplifier circuit includes a parallel resonant compensation network 401 comprising a photodiode 4011 and a grounding inductor 4012. The anode of the photodiode 4011 is coupled to the first terminal of the parallel resonant compensation network 401, and the cathode of the photodiode 4011 is coupled to the third terminal of the parallel resonant compensation network 401. The first terminal of the grounding inductor 4012 is coupled to the first terminal of the parallel resonant compensation network 401, and the second terminal of the grounding inductor 4012 is coupled to the second terminal of the parallel resonant compensation network 401. By adjusting the value of the grounding inductor 4012, the resonant frequency of the parallel resonant compensation network 401 can be changed to match the resonant frequency of the feedback resonant network, thereby achieving resonance matching between the input and feedback terminals at the target frequency point, thus improving the signal selectivity and output signal-to-noise ratio of the circuit.

[0040] Furthermore, the photodiode and the feedback resonant network in this application are isolated from each other. The resonant frequency of the feedback resonant network will not be affected by the change in the junction capacitance of the photodiode in the parallel resonant compensation network. Therefore, the resonant frequency of the feedback resonant network does not need to be adjusted in real time by adjusting the reverse bias voltage or the size of the feedback inductor.

[0041] To meet the requirements of high-sensitivity optical signal detection and operation under high-power illumination environments, in one feasible implementation, the photodiode in this application embodiment can be a large-area silicon photodiode. By increasing the photosensitive surface area, the detector can withstand higher laser power, thus allowing for a higher upper limit on the received optical power. This effectively improves the detection sensitivity to weak optical signals, enabling the photoelectric detection system to operate reliably in high-power and complex optical environments, achieving efficient capture and accurate detection of target optical signals.

[0042] Feedback resonant networks are used for frequency-selective amplification of input signals. In one feasible implementation, the feedback resonant network may include a feedback resistor, a feedback inductor, and a feedback capacitor. By adjusting the parameters of the feedback resistor, feedback inductor, and feedback capacitor, the resonant frequency, quality factor, and impedance amplitude-frequency characteristics of the feedback loop can be changed, thereby achieving precise frequency-selective amplification and feedback gain adjustment of the target frequency signal, enabling the circuit to obtain higher amplification and higher signal-to-noise ratio at the resonant frequency.

[0043] For further examples, please refer to [link / reference]. Figure 5 The illustrated photoelectric detection preamplifier circuit includes a feedback resonant network 403 comprising a feedback resistor 4031, a feedback capacitor 4032, and a feedback inductor 4033. The first terminal of the feedback resistor 4031 is coupled to the first terminal of the feedback resonant network 403, and the second terminal of the feedback resistor 4031 is coupled to the second terminal of the feedback resonant network 403. The first terminal of the feedback capacitor 4032 is coupled to the first terminal of the feedback resonant network 403, and the second terminal of the feedback inductor 4033 is coupled to the second terminal of the feedback resonant network 403. By tuning the resonant frequency of the feedback resonant network 403 to the same frequency as the resonant frequency of the parallel resonant compensation network 401, a resonance enhancement effect can be formed at that frequency, thereby improving the overall gain and signal-to-noise ratio of the photoelectric detection preamplifier circuit and achieving high-sensitivity detection of target frequency signals.

[0044] The following embodiments will illustrate a feasible selection structure for the photoelectric detection preamplifier circuit of this application. In one feasible implementation, the bias voltage input terminal voltage can be +48V, the photodiode model can be S3590-09, the inductance of the grounding inductor can be 1.31µH, the operational amplifier model can be ADA4817, the inductance of the feedback inductor can be 10µH, the capacitance of the feedback capacitor can be 5.6pF, and the resistance of the feedback resistor can be 100kΩ.

[0045] The following describes the effect of the photoelectric detection preamplifier circuit provided in this application. Based on the above-mentioned selected structure, the photoelectric detection preamplifier circuit measures laser light noise. Combined with the analysis of the spectrum analyzer, the following results are obtained: Figure 6Figure a shows the pump light noise detection results. It can be observed that the electronic noise output by the preamplifier is slightly higher than the background noise of the spectrum analyzer, but the difference remains within 3 dBm. When the laser power is increased to 3 milliwatts, the optical noise introduced by the pump light significantly exceeds the electronic noise. Further increasing the laser power to 12 milliwatts, the power level used in conventional stimulated Raman scattering imaging, the optical noise exceeds the electronic noise by nearly 20 dBm, indicating that the preamplifier can effectively achieve shot noise limit detection in the system. To evaluate its limit detection sensitivity, the trend of the standard deviation of the preamplifier output signal as a function of the square root of the laser power was further measured, and the results are shown below. Figure 6 As shown in Figure b, the standard deviation exhibits a good linear relationship with the square root of the optical power, verifying that the system has reached the shot noise limit operating state at the current modulation frequency. This preamplifier can maintain shot noise limit detection capability even at laser power as low as 0.1 milliwatts.

[0046] The embodiments of this application also provide a photoelectric detection system, which includes a photoelectric detection preamplifier circuit and a signal processing circuit. The photoelectric detection preamplifier circuit is connected to the signal processing circuit, and the photoelectric detection preamplifier circuit includes the photoelectric detection preamplifier provided in the above embodiments.

[0047] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification. The above embodiments only illustrate several implementation methods of this application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of this application's patent. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features in the formula. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A photoelectric detection preamplifier circuit, characterized in that, The photoelectric detection preamplifier circuit includes: Operational amplifier; A feedback resonant network, wherein a first end of the feedback resonant network is coupled to the inverting input terminal of the operational amplifier, and a second end of the feedback resonant network is coupled to the output terminal of the operational amplifier; A parallel resonant compensation network is provided, wherein the first end of the parallel resonant compensation network is coupled to the inverting input terminal of the operational amplifier, the second end of the parallel resonant compensation network is coupled to the ground terminal, and the third end of the parallel resonant compensation network is coupled to the power supply input terminal.

2. The photoelectric detection preamplifier circuit according to claim 1, characterized in that, The feedback resonant network includes a feedback resistor, a feedback inductor, and a feedback capacitor; The first end of the feedback resistor is coupled to the first end of the feedback resonant network, and the second end of the feedback resistor is coupled to the second end of the feedback resonant network. The first end of the feedback inductor is coupled to the first end of the feedback resonant network, and the second end of the feedback inductor is coupled to the second end of the feedback resonant network. The first end of the feedback capacitor is coupled to the first end of the feedback resonant network, and the second end of the feedback capacitor is coupled to the second end of the feedback resonant network.

3. The photoelectric detection preamplifier circuit according to claim 1, characterized in that, The parallel resonant compensation network includes a photodiode and a grounding inductor; The anode of the photodiode is coupled to the first end of the parallel resonant compensation network, and the cathode of the photodiode is coupled to the third end of the parallel resonant compensation network. The first end of the grounding inductor is coupled to the first end of the parallel resonant compensation network, and the second end of the grounding inductor is coupled to the second end of the parallel resonant compensation network.

4. The photoelectric detection preamplifier circuit according to claim 3, characterized in that, The photodiode includes a large photosensitive silicon photodiode.

5. The photoelectric detection preamplifier circuit according to claim 3, characterized in that, The photodiode is used to convert optical signals into current signals; The feedback resonant network is used to convert the current signal into a voltage signal.

6. The photoelectric detection preamplifier circuit according to claim 5, characterized in that, The factor by which the feedback resonant network converts the current signal into a voltage signal is determined based on the complex impedance of the feedback resonant network.

7. The photoelectric detection preamplifier circuit according to claim 1 or 5, characterized in that, The feedback resonant network has the same resonant frequency as the parallel resonant compensation network.

8. A photoelectric detection system, characterized in that, The photoelectric detection system includes a photoelectric detection preamplifier circuit and a signal processing circuit. The photoelectric detection preamplifier circuit is connected to the signal processing circuit. The photoelectric detection preamplifier circuit includes the photoelectric detection preamplifier circuit according to any one of claims 1-7.

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